SST39SF010A-45-4C-NHE - Silicon Storage Technology

S71147-08-000 9/09

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

MPF is a trademark of Silicon Storage Technology, Inc.

These specifications are subject to change without notice.

Data Sheet

1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash

SST39SF010A / SST39SF020A / SST39SF040

FEATURES:

• Organized as 128K x8 / 256K x8 / 512K x8

• Single 4.5-5.5V Read and Write Operations

• Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

• Low Power Consumption

(typical values at 14 MHz)

– Active Current: 10 mA (typical)

– Standby Current: 30 µA (typical)

• Sector-Erase Capability

– Uniform 4 KByte sectors

• Fast Read Access Time:

– 45 ns

– 70 ns

• Latched Address and Data

• Automatic Write Timing

– Internal VPP Generation

• Fast Erase and Byte-Program

– Sector-Erase Time: 18 ms (typical)

– Chip-Erase Time: 70 ms (typical)

– Byte-Program Time: 14 µs (typical)

– Chip Rewrite Time:

2 seconds (typical) for SST39SF010A

4 seconds (typical) for SST39SF020A

8 seconds (typical) for SST39SF040

• End-of-Write Detection

– Toggle Bit

– Data# Polling

• TTL I/O Compatibility

• JEDEC Standard

– Flash EEPROM Pinouts and command sets

• Packages Available

– 32-lead PLCC

– 32-lead TSOP (8mm x 14mm)

– 32-pin PDIP

• All devices are RoHS compliant

• All non-Pb (lead-free) devices are RoHS compliant

PRODUCT DESCRIPTION

The SST39SF010A/020A/040 are CMOS Multi-Purpose

Flash (MPF) manufactured with SST’s proprietary, high

performance CMOS SuperFlash technology. The split-gate

cell design and thick oxide tunneling injector attain better

reliability and manufacturability compared with alternate

approaches. The SST39SF010A/020A/040 devices write

(Program or Erase) with a 4.5-5.5V power supply. The

SST39SF010A/020A/040 devices conform to JEDEC stan-

dard pinouts for x8 memories.

Featuring high performance Byte-Program, the

SST39SF010A/020A/040 devices provide a maximum

Byte-Program time of 20 µsec. These devices use Toggle

Bit or Data# Polling to indicate the completion of Program

operation. To protect against inadvertent write, they have

on-chip hardware and Software Data Protection schemes.

Designed, manufactured, and tested for a wide spectrum of

applications, these devices are offered with a guaranteed

typical endurance of 100,000 cycles. Data retention is rated

at greater than 100 years.

The SST39SF010A/020A/040 devices are suited for appli-

cations that require convenient and economical updating of

program, configuration, or data memory. For all system

applications, they significantly improve performance and

reliability, while lowering power consumption. They inher-

ently use less energy during erase and program than alter-

native flash technologies. The total energy consumed is a

function of the applied voltage, current, and time of applica-

tion. Since for any given voltage range, the SuperFlash

technology uses less current to program and has a shorter

erase time, the total energy consumed during any Erase or

Program operation is less than alternative flash technolo-

gies. These devices also improve flexibility while lowering

the cost for program, data, and configuration storage appli-

cations.

The SuperFlash technology provides fixed Erase and Pro-

gram times, independent of the number of Erase/Program

cycles that have occurred. Therefore the system software

or hardware does not have to be modified or de-rated as is

necessary with alternative flash technologies, whose Erase

and Program times increase with accumulated Erase/Pro-

gram cycles.

To meet high density, surface mount requirements, the

SST39SF010A/020A/040 are offered in 32-lead PLCC and

32-lead TSOP packages. A 600 mil, 32-pin PDIP is also

available. See Figures 2, 3, and 4 for pin assignments.

SST39SF010A / 020A / 0405.0V 1Mb / 2Mb / 4Mb (x8) MPF memories

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Data Sheet

1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash

SST39SF010A / SST39SF020A / SST39SF040

Device Operation

Commands are used to initiate the memory operation func-

tions of the device. Commands are written to the device

using standard microprocessor write sequences. A com-

mand is written by asserting WE# low while keeping CE#

low. The address bus is latched on the falling edge of WE#

or CE#, whichever occurs last. The data bus is latched on

the rising edge of WE# or CE#, whichever occurs first.

Read

The Read operation of the SST39SF010A/020A/040 is

controlled by CE# and OE#, both have to be low for the

system to obtain data from the outputs. CE# is used for

device selection. When CE# is high, the chip is dese-

lected and only standby power is consumed. OE# is the

output control and is used to gate data from the output

pins. The data bus is in high impedance state when

either CE# or OE# is high. Refer to the Read cycle timing

diagram (Figure 5) for further details.

Byte-Program Operation

The SST39SF010A/020A/040 are programmed on a byte-

by-byte basis. Before programming, the sector where the

byte exists must be fully erased. The Program operation is

accomplished in three steps. The first step is the three-byte

load sequence for Software Data Protection. The second

step is to load byte address and byte data. During the Byte-

Program operation, the addresses are latched on the falling

edge of either CE# or WE#, whichever occurs last. The

data is latched on the rising edge of either CE# or WE#,

whichever occurs first. The third step is the internal Pro-

gram operation which is initiated after the rising edge of the

fourth WE# or CE#, whichever occurs first. The Program

operation, once initiated, will be completed, within 20 µs.

See Figures 6 and 7 for WE# and CE# controlled Program

operation timing diagrams and Figure 16 for flowcharts.

During the Program operation, the only valid reads are

Data# Polling and Toggle Bit. During the internal Program

operation, the host is free to perform additional tasks. Any

commands written during the internal Program operation

will be ignored.

Sector-Erase Operation

The Sector-Erase operation allows the system to erase the

device on a sector-by-sector basis. The sector architecture

is based on uniform sector size of 4 KByte. The Sector-

Erase operation is initiated by executing a six-byte com-

mand load sequence for Software Data Protection with

Sector-Erase command (30H) and sector address (SA) in

the last bus cycle. The sector address is latched on the fall-

ing edge of the sixth WE# pulse, while the command (30H)

is latched on the rising edge of the sixth WE# pulse. The

internal Erase operation begins after the sixth WE# pulse.

The End-of-Erase can be determined using either Data#

Polling or Toggle Bit methods. See Figure 10 for timing

waveforms. Any commands written during the Sector-

Erase operation will be ignored.

Chip-Erase Operation

The SST39SF010A/020A/040 provide Chip-Erase opera-

tion, which allows the user to erase the entire memory

array to the “1s” state. This is useful when the entire device

must be quickly erased.

The Chip-Erase operation is initiated by executing a six-

byte Software Data Protection command sequence with

Chip-Erase command (10H) with address 5555H in the last

byte sequence. The internal Erase operation begins with

the rising edge of the sixth WE# or CE#, whichever occurs

first. During the internal Erase operation, the only valid read

is Toggle Bit or Data# Polling. See Table 4 for the command

sequence, Figure 11 for timing diagram, and Figure 19 for

the flowchart. Any commands written during the Chip-

Erase operation will be ignored.

Write Operation Status Detection

The SST39SF010A/020A/040 provide two software means

to detect the completion of a Write (Program or Erase)

cycle, in order to optimize the system Write cycle time. The

software detection includes two status bits: Data# Polling

(DQ7) and Toggle Bit (DQ6). The End-of-Write detection

mode is enabled after the rising edge of WE# which ini-

tiates the internal Program or Erase operation.

The actual completion of the nonvolatile write is asynchro-

nous with the system; therefore, either a Data# Polling or

Toggle Bit read may be simultaneous with the completion

of the Write cycle. If this occurs, the system may possibly

get an erroneous result, i.e., valid data may appear to con-

flict with either DQ7 or DQ6. In order to prevent spurious

rejection, if an erroneous result occurs, the software routine

should include a loop to read the accessed location an

additional two (2) times. If both reads are valid, then the

device has completed the Write cycle, otherwise the rejec-

tion is valid.

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Data Sheet

1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash

SST39SF010A / SST39SF020A / SST39SF040

Data# Polling (DQ7)

When the SST39SF010A/020A/040 are in the internal Pro-

gram operation, any attempt to read DQ7 will produce the

complement of the true data. Once the Program operation

is completed, DQ7 will produce true data. Note that even

though DQ7 may have valid data immediately following the

completion of an internal Write operation, the remaining

data outputs may still be invalid: valid data on the entire

data bus will appear in subsequent successive Read

cycles after an interval of 1 µs. During internal Erase opera-

tion, any attempt to read DQ7 will produce a ‘0’. Once the

internal Erase operation is completed, DQ7 will produce a

‘1’. The Data# Polling is valid after the rising edge of fourth

WE# (or CE#) pulse for Program operation. For Sector- or

Chip-Erase, the Data# Polling is valid after the rising edge

of sixth WE# (or CE#) pulse. See Figure 8 for Data# Polling

timing diagram and Figure 17 for a flowchart.

Toggle Bit (DQ6)

During the internal Program or Erase operation, any con-

secutive attempts to read DQ6 will produce alternating 0s

and 1s, i.e., toggling between 0 and 1. When the internal

Program or Erase operation is completed, the toggling will

stop. The device is then ready for the next operation. The

Toggle Bit is valid after the rising edge of fourth WE# (or

CE#) pulse for Program operation. For Sector- or Chip-

Erase, the Toggle Bit is valid after the rising edge of sixth

WE# (or CE#) pulse. See Figure 9 for Toggle Bit timing dia-

gram and Figure 17 for a flowchart.

Data Protection

The SST39SF010A/020A/040 provide both hardware and

software features to protect nonvolatile data from inadvert-

ent writes.

Hardware Data Protection

Noise/Glitch Protection: A WE# or CE# pulse of less than 5

ns will not initiate a Write cycle.

VDD Power Up/Down Detection: The Write operation is

inhibited when VDD is less than 2.5V.

Write Inhibit Mode: Forcing OE# low, CE# high, or WE#

high will inhibit the Write operation. This prevents inadvert-

ent writes during power-up or power-down.

Software Data Protection (SDP)

The SST39SF010A/020A/040 provide the JEDEC

approved Software Data Protection scheme for all data

alteration operations, i.e., Program and Erase. Any Pro-

gram operation requires the inclusion of a series of three-

byte sequence. The three-byte load sequence is used to

initiate the Program operation, providing optimal protection

from inadvertent Write operations, e.g., during the system

power-up or power-down. Any Erase operation requires the

inclusion of six-byte load sequence. The SST39SF010A/

020A/040 devices are shipped with the Software Data Pro-

tection permanently enabled. See Table 4 for the specific

software command codes. During SDP command

sequence, invalid commands will abort the device to read

mode, within TRC.

Product Identification

The Product Identification mode identifies the device as the

SST39SF040, SST39SF010A, or SST39SF020A and

manufacturer as SST. This mode may be accessed by soft-

ware operations. Users may wish to use the software Prod-

uct Identification operation to identify the part (i.e., using the

device ID) when using multiple manufacturers in the same

socket. For details, Table 4 for software operation, Figure

12 for the software ID entry and read timing diagram and

Figure 18 for the ID entry command sequence flowchart.

Product Identification Mode Exit/Reset

In order to return to the standard Read mode, the Software

Product Identification mode must be exited. Exit is accom-

plished by issuing the Exit ID command sequence, which

returns the device to the Read operation. Please note that

the software reset command is ignored during an internal

Program or Erase operation. See Table 4 for software com-

mand codes, Figure 13 for timing waveform and Figure 18

for a flowchart.

TABLE 1: Product Identification

Address Data

Manufacturer’s ID 0000H BFH

Device ID

SST39SF010A 0001H B5H

SST39SF020A 0001H B6H

SST39SF040 0001H B7H

T1.2 1147

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Data Sheet

1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash

SST39SF010A / SST39SF020A / SST39SF040

FIGURE 1: Functional Block Diagram

FIGURE 2: Pin Assignments for 32-lead PLCC

Y-Decoder

I/O Buffers and Data Latches

1147 B1.2

Address Buffers & Latches

X-Decoder

DQ7 - DQ0

Memory Address

OE#

CE#

WE#

SuperFlash

Memory

Control Logic

SST39SF010A

DQ0

SST39SF020ASST39SF040

DQ0

A14

A13

A11

OE#

A10

CE#

DQ7

SST39SF020A SST39SF040

A14

A13

A11

OE#

A10

CE#

DQ7

A14

A13

A11

OE#

A10

CE#

DQ7

4 3 2 1 32 31 30

A12

A15

A16

VDD

WE#

SST39SF020A SST39SF040

A12

A15

A16

VDD

WE#

A17

A12

A15

A16

A18

VDD

WE#

A17

32-lead PLCC

Top View

1147 32-plcc P2.4

14 15 16 17 18 19 20

DQ1

DQ2

VSS

DQ3

DQ4

DQ5

DQ6

SST39SF020ASST39SF040

DQ1

DQ2

VSS

DQ3

DQ4

DQ5

DQ6

DQ1

DQ2

VSS

DQ3

DQ4

DQ5

DQ6

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Data Sheet

1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash

SST39SF010A / SST39SF020A / SST39SF040

FIGURE 3: Pin Assignments for 32-lead TSOP (8mm x 14mm)

FIGURE 4: Pin Assignments for 32-pin PDIP

A11

A13

A14

WE#

VDD

A16

A15

A12

OE#

A10

CE#

DQ7

DQ6

DQ5

DQ4

DQ3

VSS

DQ2

DQ1

DQ0

1147 32-tsop P1.1

Standard Pinout

Top View

Die Up

SST39SF010A

A11

A13

A14

A17

WE#

VDD

A16

A15

A12

A11

A13

A14

A17

WE#

VDD

A18

A16

A15

A12

SST39SF020ASST39SF040 SST39SF010A

OE#

A10

CE#

DQ7

DQ6

DQ5

DQ4

DQ3

VSS

DQ2

DQ1

DQ0

OE#

A10

CE#

DQ7

DQ6

DQ5

DQ4

DQ3

VSS

DQ2

DQ1

DQ0

SST39SF020A SST39SF040

32-pin

PDIP

Top View

1147 32-pdip P3.2

A16

A15

A12

DQ0

DQ1

DQ2

VSS

SST39SF010A

A16

A15

A12

DQ0

DQ1

DQ2

VSS

SST39SF020A

A18

A16

A15

A12

DQ0

DQ1

DQ2

VSS

SST39SF040

SST39SF010A

VDD

WE#

A14

A13

A11

OE#

A10

CE#

DQ7

DQ6

DQ5

DQ4

DQ3

SST39SF020A SST39SF040

VDD

WE#

A17

A14

A13

A11

OE#

A10

CE#

DQ7

DQ6

DQ5

DQ4

DQ3

VDD

WE#

A17

A14

A13

A11

OE#

A10

CE#

DQ7

DQ6

DQ5

DQ4

DQ3

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Data Sheet

1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash

SST39SF010A / SST39SF020A / SST39SF040

TABLE 2: Pin Description

Symbol Pin Name Functions

AMS1-A0Address Inputs To provide memory addresses.

During Sector-Erase AMS-A12 address lines will select the sector.

DQ7-DQ0Data Input/output To output data during Read cycles and receive input data during Write cycles.

Data is internally latched during a Write cycle.

The outputs are in tri-state when OE# or CE# is high.

CE# Chip Enable To activate the device when CE# is low.

OE# Output Enable To gate the data output buffers.

WE# Write Enable To control the Write operations.

VDD Power Supply To provide 5.0V supply (4.5-5.5V)

VSS Ground

NC No Connection Unconnected pins.

T2.2 1147

1. AMS = Most significant address

AMS = A16 for SST39SF010A, A17 for SST39SF020A, and A18 for SST39SF040

TABLE 3: Operation Modes Selection

Mode CE# OE# WE# DQ Address

Read VIL VIL VIH DOUT AIN

Program VIL VIH VIL DIN AIN

Erase VIL VIH VIL X1

1. X can be VIL or VIH, but no other value.

Sector address,

XXH for Chip-Erase

Standby VIH X X High Z X

Write Inhibit X VIL X High Z/ DOUT X

XXV

IH High Z/ DOUT X

Product Identification

Software Mode VIL VIL VIH See Table 4

T3.3 1147

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Data Sheet

1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash

SST39SF010A / SST39SF020A / SST39SF040

TABLE 4: Software Command Sequence

Command

Sequence

1st Bus

Write Cycle

2nd Bus

Write Cycle

3rd Bus

Write Cycle

4th Bus

Write Cycle

5th Bus

Write Cycle

6th Bus

Write Cycle

Addr1Data Addr1Data Addr1Data Addr1Data Addr1Data Addr1Data

Byte-Program 5555H AAH 2AAAH 55H 5555H A0H BA2Data

Sector-Erase 5555H AAH 2AAAH 55H 5555H 80H 5555H AAH 2AAAH 55H SAX330H

Chip-Erase 5555H AAH 2AAAH 55H 5555H 80H 5555H AAH 2AAAH 55H 5555H 10H

Software ID Entry4,5 5555H AAH 2AAAH 55H 5555H 90H

Software ID Exit6XXH F0H

Software ID Exit65555H AAH 2AAAH 55H 5555H F0H

T4.2 1147

1. Address format A14-A0 (Hex), Addresses AMS-A15 can be VIL or VIH, but no other value, for the Command sequence.

AMS = Most significant address

AMS = A16 for SST39SF010A, A17 for SST39SF020A, and A18 for SST39SF040

2. BA = Program Byte address

3. SAX for Sector-Erase; uses AMS-A12 address lines

4. The device does not remain in Software Product ID mode if powered down.

5. With AMS-A1 = 0; SST Manufacturer’s ID = BFH, is read with A0 = 0,

SST39SF010A Device ID = B5H, is read with A0 = 1

SST39SF020A Device ID = B6H, is read with A0 = 1

SST39SF040 Device ID = B7H, is read with A0 = 1

6. Both Software ID Exit operations are equivalent

Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum

Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation

of the device at these conditions or conditions greater than those defined in the operational sections of this data

sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)

Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C

Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C

D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD+0.5V

Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -2.0V to VDD+2.0V

Voltage on A9 Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 13.2V

Package Power Dissipation Capability (Ta = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W

Through Hold Lead Soldering Temperature (10 Seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300°C

Surface Mount Lead Soldering Temperature (3 Seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240°C

Output Short Circuit Current1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA

1. Outputs shorted for no more than one second. No more than one output shorted at a time.

Operating Range

Range Ambient Temp VDD

Commercial 0°C to +70°C 4.5-5.5V

Industrial -40°C to +85°C 4.5-5.5V

AC Conditions of Test

Input Rise/Fall Time . . . . . . . . . . . . . . 5 ns

Output Load . . . . . . . . . . . . . . . . . . . . . CL = 30 pF for 45 ns

Output Load . . . . . . . . . . . . . . . . . . . . . CL = 100 pF for 70 ns

See Figures 14 and 15

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Data Sheet

1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash

SST39SF010A / SST39SF020A / SST39SF040

TABLE 5: DC Operating Characteristics VDD = 4.5-5.5V1

Symbol Parameter

Limits

Test ConditionsMin Max Units

IDD Power Supply Current Address input=VILT/VIHT

, at f=1/TRC Min

VDD=VDD Max

Read225 mA CE#=VIL, OE#=WE#=VIH, all I/Os open

Program and Erase 35 mA CE#=WE#=VIL, OE#=VIH

ISB1 Standby VDD Current

(TTL input)

3mACE#=V

IH, VDD=VDD Max

ISB2 Standby VDD Current

(CMOS input)

100 µA CE#=VIHC, VDD=VDD Max

ILI Input Leakage Current 1 µA VIN=GND to VDD, VDD=VDD Max

ILO Output Leakage Current 10 µA VOUT=GND to VDD, VDD=VDD Max

VIL Input Low Voltage 0.8 V VDD=VDD Min

VIH Input High Voltage 2.0 V VDD=VDD Max

VIHC Input High Voltage (CMOS) VDD-0.3 V VDD=VDD Max

VOL Output Low Voltage 0.4 V IOL=2.1 mA, VDD=VDD Min

VOH Output High Voltage 2.4 V IOH=-400 µA, VDD=VDD Min

T5.10 1147

1. Typical conditions for the Active Current shown on the front data sheet page are average values at 25°C

(room temperature), and VDD = 5V for SF devices. Not 100% tested.

2. Values are for 70 ns conditions. See the Multi-Purpose Flash Power Rating application note for further information.

TABLE 6: Recommended System Power-up Timings

Symbol Parameter Minimum Units

TPU-READ1

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

Power-up to Read Operation 100 µs

TPU-WRITE1Power-up to Program/Erase Operation 100 µs

T6.1 1147

TABLE 7: Capacitance (Ta = 25°C, f=1 Mhz, other pins open)

Parameter Description Test Condition Maximum

CI/O1

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

I/O Pin Capacitance VI/O = 0V 12 pF

CIN1Input Capacitance VIN = 0V 6 pF

T7.0 1147

TABLE 8: Reliability Characteristics

Symbol Parameter Minimum Specification Units Test Method

NEND1,2

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

2. NEND endurance rating is qualified as a 10,000 cycle minimum for the whole device. A sector- or block-level rating would result in a

higher minimum specification.

Endurance 10,000 Cycles JEDEC Standard A117

TDR1Data Retention 100 Years JEDEC Standard A103

ILTH1Latch Up 100 + IDD mA JEDEC Standard 78

T8.2 1147

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Data Sheet

1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash

SST39SF010A / SST39SF020A / SST39SF040

AC CHARACTERISTICS

TABLE 9: Read Cycle Timing Parameters VDD = 4.5-5.5V

Symbol Parameter

SST39SF010A/020A/040-45 SST39SF010A/020A/040-70

UnitsMin Max Min Max

TRC Read Cycle Time 45 70 ns

TCE Chip Enable Access Time 45 70 ns

TAA Address Access Time 45 70 ns

TOE Output Enable Access Time 25 35 ns

TCLZ1

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

CE# Low to Active Output 0 0 ns

TOLZ1OE# Low to Active Output 0 0 ns

TCHZ1CE# High to High-Z Output 15 25 ns

TOHZ1OE# High to High-Z Output 15 25 ns

TOH1Output Hold from Address Change 0 0 ns

T9.4 1147

TABLE 10: Program/Erase Cycle Timing Parameters

Symbol Parameter Min Max Units

TBP Byte-Program Time 20 µs

TAS Address Setup Time 0 ns

TAH Address Hold Time 30 ns

TCS WE# and CE# Setup Time 0 ns

TCH WE# and CE# Hold Time 0 ns

TOES OE# High Setup Time 0 ns

TOEH OE# High Hold Time 10 ns

TCP CE# Pulse Width 40 ns

TWP WE# Pulse Width 40 ns

TWPH1

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

WE# Pulse Width High 30 ns

TCPH1CE# Pulse Width High 30 ns

TDS Data Setup Time 40 ns

TDH1Data Hold Time 0 ns

TIDA1Software ID Access and Exit Time 150 ns

TSE Sector-Erase 25 ms

TSCE Chip-Erase 100 ms

T10.1 1147

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Data Sheet

1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash

SST39SF010A / SST39SF020A / SST39SF040

FIGURE 5: Read Cycle Timing Diagram

FIGURE 6: WE# Controlled Program Cycle Timing Diagram

1147 F03.1

ADDRESS AMS-0

DQ7-0

WE#

OE#

CE#

TCE

TRC TAA

TOE

TOLZ

VIH

HIGH-Z

TCLZ TOH TCHZ

HIGH-Z

DATA VALIDDATA VALID

TOHZ

Note: A

= Most significant address

= A

for SST39SF010A, A

for SST39SF020A, and A

for SST39SF040

1147 F04.1

ADDRESS AMS-0

Note: AMS = Most significant address

MS = A16 for SST39SF010A, A17 for SST39SF020A, and A18 for SST39SF040

DQ7-0

TDH

TWPH TDS

TWP

TAH

TAS

TCH

TCS

CE#

SW0 SW1 SW2

5555 2AAA 5555 ADDR

AA 55 A0 DATA

INTERNAL PROGRAM OPERATION STARTS

BYTE

(ADDR/DATA)

OE#

WE#

TBP

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Data Sheet

1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash

SST39SF010A / SST39SF020A / SST39SF040

FIGURE 7: CE# Controlled Program Cycle Timing Diagram

FIGURE 8: Data# Polling Timing Diagram

1147 F05.1

ADDRESS AMS-0

DQ7-0

TDH

TCPH TDS

TCP

TAH

TAS

TCH

TCS

WE#

SW0 SW1 SW2

5555 2AAA 5555 ADDR

AA 55 A0 DATA

INTERNAL PROGRAM OPERATION STARTS

BYTE

(ADDR/DATA)

OE#

CE#

TBP

Note: AMS = Most significant address

MS = A16 for SST39SF010A, A17 for SST39SF020A, and A18 for SST39SF040

1147 F06.1

ADDRESS A

MS-0

Note: A

= Most significant address

= A

for SST39SF010A, A

for SST39SF020A, and A

for SST39SF040

DD# D# D

WE#

OE#

CE#

OEH

OES

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Data Sheet

1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash

SST39SF010A / SST39SF020A / SST39SF040

FIGURE 9: Toggle Bit Timing Diagram

FIGURE 10: WE# Controlled Sector-Erase Timing Diagram

1147 F07.1

ADDRESS AMS-0

DQ6

WE#

OE#

CE#

TOE

TOEH

TCE

TOES

TWO READ CYCLES

WITH SAME OUTPUTS

Note

Note: Toggle bit output is always high first.

MS = Most significant address

MS = A16 for SST39SF010A, A17 for SST39SF020A, and A18 for SST39SF040

1147 F08.1

Note: This device also supports CE# controlled Sector-Erase operation. The WE# and CE# signals are

interchageable as long as minimum timings are met. (See Table 10)

SAX = Sector Address

MS = Most significant address

MS = A16 for SST39SF010A, A17 for SST39SF020A, and A18 for SST39SF040

ADDRESS AMS-0

DQ7-0

WE#

SW0 SW1 SW2 SW3 SW4 SW5

5555 2AAA 2AAA5555 5555

55 3055AA 80 AA

SAX

OE#

CE#

SIX-BYTE CODE FOR SECTOR-ERASE

TSE

TWP

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Data Sheet

1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash

SST39SF010A / SST39SF020A / SST39SF040

FIGURE 11: WE# Controlled Chip-Erase Timing Diagram

FIGURE 12: Software ID Entry and Read

1147 F17.1

ADDRESS AMS-0

Note: This device also supports CE# controlled Chip-Erase operation. The WE# and CE# signals are

interchageable as long as minimum timings are met. (See Table 10)

SAX = Sector Address

MS = Most significant address

MS = A16 for SST39SF010A, A17 for SST39SF020A, and A18 for SST39SF040

DQ7-0

WE#

SW0 SW1 SW2 SW3 SW4 SW5

5555 2AAA 2AAA5555 5555

55 1055AA 80 AA

5555

OE#

CE#

SIX-BYTE CODE FOR CHIP-ERASE

TSCE

TWP

1147 F09.2

ADDRESS A14-0

TIDA

DQ7-0

WE#

SW0 SW1 SW2

5555 2AAA 5555 0000 0001

OE#

CE#

Three-byte Sequence for

Software ID Entry

TWP

TWPH TAA

BF Device ID55AA 90

Device ID = B5H for SST39SF010A, B6H for SST39SF020A, and B7H for SST39SF040

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Data Sheet

1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash

SST39SF010A / SST39SF020A / SST39SF040

FIGURE 13: Software ID Exit and Reset

1147 F10.0

ADDRESS A14-0

DQ7-0

TIDA

TWP

TWHP

WE#

SW0 SW1 SW2

5555 2AAA 5555

THREE-BYTE SEQUENCE FOR

SOFTWARE ID EXIT AND RESET

OE#

CE#

AA 55 F0

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Data Sheet

1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash

SST39SF010A / SST39SF020A / SST39SF040

FIGURE 14: AC Input/Output Reference Waveforms

FIGURE 15: A Test Load Example

1147 F11.1

REFERENCE POINTS OUTPUTINPUT

IHT

ILT

AC test inputs are driven at VIHT (3.0V) for a logic “1” and VILT (0V) for a logic “0”. Measurement reference points for inputs

and outputs are VIT (1.5V) and VOT (1.5V). Input rise and fall times (10% ↔ 90%) are <5 ns.

Note: VIT - VINPUT Te s t

VOT - VOUTPUT Test

VIHT - VINPUT HIGH Test

VILT - VINPUT LOW Test

1147 F12.0

TO TESTER

TO DUT

CLRL LOW

RL HIGH

VDD

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Data Sheet

1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash

SST39SF010A / SST39SF020A / SST39SF040

FIGURE 16: Byte-Program Algorithm

1147 F13.1

Start

Load data: AAH

Address: 5555H

Load data: 55H

Address: 2AAAH

Load data: A0H

Address: 5555H

Load Byte

Address/Byte

Data

Wait for end of

Program (TBP,

Data# Polling

bit, or Toggle bit

operation)

Program

Completed

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Data Sheet

1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash

SST39SF010A / SST39SF020A / SST39SF040

FIGURE 17: Wait Options

1147 F14.0

Wait TBP,

TSCE, or TSE

Byte

Program/Erase

Initiated

Internal Timer Toggle Bit

Ye s

Program/Erase

Completed

Does DQ6

match?

Read same

byte

Data# Polling

Program/Erase

Completed

Program/Erase

Completed

Read byte

Is DQ7 =

true data?

Read DQ7

Byte

Program/Erase

Initiated

Byte

Program/Erase

Initiated

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Data Sheet

1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash

SST39SF010A / SST39SF020A / SST39SF040

FIGURE 18: Software Product Command Flowcharts

1147 F15.1

Load data: AAH

Address: 5555H

Software Product ID Entry

Command Sequence

Load data: 55H

Address: 2AAAH

Load data: 90H

Address: 5555H

Wait TIDA

Read Software ID

Load data: AAH

Address: 5555H

Software Product ID Exit &

Reset Command Sequence

Load data: 55H

Address: 2AAAH

Load data: F0H

Address: 5555H

Load data: F0H

Address: XXH

Return to normal

operation

Wait TIDA

Return to normal

operation

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Data Sheet

1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash

SST39SF010A / SST39SF020A / SST39SF040

FIGURE 19: Erase Command Sequence

1147 F16.1

Load data: AAH

Address: 5555H

Chip-Erase

Command Sequence

Load data: 55H

Address: 2AAAH

Load data: 80H

Address: 5555H

Load data: 55H

Address: 2AAAH

Load data: 10H

Address: 5555H

Load data: AAH

Address: 5555H

Wait TSCE

Chip erased

to FFH

Load data: AAH

Address: 5555H

Sector-Erase

Command Sequence

Load data: 55H

Address: 2AAAH

Load data: 80H

Address: 5555H

Load data: 55H

Address: 2AAAH

Load data: 30H

Address: SAX

Load data: AAH

Address: 5555H

Wait TSE

Sector erased

to FFH

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Data Sheet

1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash

SST39SF010A / SST39SF020A / SST39SF040

PRODUCT ORDERING INFORMATION

Environmental Attribute

E = non-Pb

Package Modifier

H = 32 pins or leads

Package Type

N = PLCC

P = PDIP

W = TSOP (type 1, die up, 8mm x 14mm)

Temperature Range

C = Commercial = 0°C to +70°C

I = Industrial = -40°C to +85°C

Minimum Endurance

4 = 10,000 cycles

Read Access Speed

45 = 45 ns

70 = 70 ns

Version

A = Special Feature Version

Device Density

040 = 4 Mbit

020 = 2 Mbit

010 = 1 Mbit

Voltage

S = 4.5-5.5V

Product Series

39 = Multi-Purpose Flash

SST 39 SF 010A - 45 - 4C - NH E

XX XXXXXX-XX -XX- XXX X

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Data Sheet

1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash

SST39SF010A / SST39SF020A / SST39SF040

Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales

representative to confirm availability of valid combinations and to determine availability of new combinations.

Valid combinations for SST39SF010A

SST39SF010A-45-4C-NHE SST39SF010A-45-4C-WHE

SST39SF010A-70-4C-NHE SST39SF010A-70-4C-WHE SST39SF010A-70-4C-PHE

SST39SF010A-45-4I-NHE SST39SF010A-45-4I-WHE

SST39SF010A-70-4I-NHE SST39SF010A-70-4I-WHE

Valid combinations for SST39SF020A

SST39SF020A-45-4C-NHE SST39SF020A-45-4C-WHE

SST39SF020A-70-4C-NHE SST39SF020A-70-4C-WHE SST39SF020A-70-4C-PHE

SST39SF020A-45-4I-NHE SST39SF020A-45-4I-WHE

SST39SF020A-70-4I-NHE SST39SF020A-70-4I-WHE

Valid combinations for SST39SF040

SST39SF040-45-4C-NHE SST39SF040-45-4C-WHE

SST39SF040-70-4C-NHE SST39SF040-70-4C-WHE SST39SF040-70-4C-PHE

SST39SF040-45-4I-NHE SST39SF040-45-4I-WHE

SST39SF040-70-4I-NHE SST39SF040-70-4I-WHE

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Data Sheet

1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash

SST39SF010A / SST39SF020A / SST39SF040

PACKAGING DIAGRAMS

FIGURE 20: 32-lead Plastic Lead Chip Carrier (PLCC)

SST Package Code: NH

.040

.030

.021

.013

.530

.490

.095

.075

.140

.125

.032

.026

.032

.026

.029

.023

.453

.447

.553

.547

.595

.585

.495

.485 .112

.106

.042

.048

.042

.015 Min.

TOP VIEW SIDE VIEW BOTTOM VIEW

1232

.400

BSC

32-plcc-NH-3

Note: 1. Complies with JEDEC publication 95 MS-016 AE dimensions, although some dimensions may be more stringent.

2. All linear dimensions are in inches (max/min).

3. Dimensions do not include mold flash. Maximum allowable mold flash is .008 inches.

4. Coplanarity: 4 mils.

.050

BSC

.050

BSC

Optional

Pin #1

Identifier .020 R.

MAX. R.

x 30˚

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Data Sheet

1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash

SST39SF010A / SST39SF020A / SST39SF040

FIGURE 21: 32-lead Thin Small Outline Package (TSOP) 8mm x 14mm

SST Package Code: WH

32-tsop-WH-7

Note: 1. Complies with JEDEC publication 95 MO-142 BA dimensions,

although some dimensions may be more stringent.

2. All linear dimensions are in millimeters (max/min).

3. Coplanarity: 0.1 mm

4. Maximum allowable mold flash is 0.15 mm at the package ends, and 0.25 mm between leads.

1.20

max.

1mm

Pin # 1 Identifier

12.50

12.30

14.20

13.80

0.70

0.50

8.10

7.90 0.27

0.17

0.50

BSC

1.05

0.95

0.15

0.05

0.70

0.50

0˚- 5˚

DETAIL

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Data Sheet

1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash

SST39SF010A / SST39SF020A / SST39SF040

FIGURE 22: 32-pin Plastic Dual In-line Pins (PDIP)

SST Package Code: PH

32-pdip-PH-3

Pin #1 Identifier

Base

Plane

Seating

Plane

Note: 1. Complies with JEDEC publication 95 MO-015 AP dimensions, although some dimensions may be more stringent.

2. All linear dimensions are in inches (max/min).

3. Dimensions do not include mold flash. Maximum allowable mold flash is .010 inches.

.200

.170

7˚

4 PLCS.

.600 BSC

.100 BSC

.150

.120

.022

.016

.065

.045

.080

.070

.050

.015

.075

.065

1.655

1.645

.012

.008

0˚

15˚

.625

.600

.550

.530

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Data Sheet

1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash

SST39SF010A / SST39SF020A / SST39SF040

TABLE 11: Revision History

Number Description Date

02 •2002 Data Book May 2002

03 •Changes to Table 5 on page 8

– Added footnote for MPF power usage and Typical conditions

– Clarified the Test Conditions for Power Supply Current and Read parameters

– Clarified IDD Write to be Program and Erase

Mar 2003

04 •Document status changed from “Preliminary Specification” to “Data Sheet”

•Changed IDD Program and Erase max values from 25 to 35 in Table 5 on page 8

Oct 2003

05 •2004 Data Book

•Added non-Pb MPNs and removed footnote (See page 21)

Nov 2003

06 •Corrected Revision History for Version 04:

IDD max value was incorrectly stated as 30 mA instead of 35 mA

Aug 2004

07 •Removed leaded parts from valid combinations. See PSN-D0PB0001 Mar 2009

08 •Changed endurance from 10,000 to 100,000 in Product Description, page 1 Sep 2009

Silicon Storage Technology, Inc. • 1171 Sonora Court • Sunnyvale, CA 94086 • Telephone 408-735-9110 • Fax 408-735-9036

www.SuperFlash.com or www.sst.com

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