RJK0654DPB-00#J5 - Renesas Electronics

REJ03G1880-0100 Rev.1.00 Nov 16, 200 9

Page 1 of 6

Preliminary

RJK0654DPB

Silicon N Channel Power MOS FET

Power Switching REJ03G1880-0100

Rev.1.00

Nov 16, 2009

Features

• High speed switching

• Low drive current

• Low on-resistance

• RDS(on) = 6.5 mΩ typ. (at VGS = 10 V)

• Pb-free

• Halogen-free

• High densit y mounting

Outline

RENESAS Package code: PTZZ0005DA-A

(Package name: LFPAK)

SSS

123

1, 2, 3 Source

4 Gate

5 Drain

1234

Absolute Maximum Ratings

(Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage VDSS 60 V

Gate to source voltage VGSS ±20 V

Drain current ID 30 A

Drain peak current ID(pulse)Note1 120 A

Body-drain diode reverse drain current IDR 30 A

Avalanche current IAP Note 2 30 A

Avalanche energy EAR Note 2 6.8 mJ

Channel dissipation Pch Note3 55 W

Channel to Case Thermal Resistance θch-C 2.27 °C/W

Channel temperature Tch 150 °C

Storage temperature Tstg –55 to +150 °C

Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%

2. Value at L=10uH, Tch = 25 °C, Rg ≥ 50 Ω

3. Tc = 25°C

RJK0654DPB Preliminary

REJ03G1880-0100 Rev.1.00 Nov 16, 200 9

Page 2 of 6

Electrical Characteristics

(Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 V

Gate to source leak current IGSS — — ±0.1 μA VGS = ±20 V, VDS = 0 V

Zero gate voltage drain current IDSS — — 1 μA VDS = 60 V, VGS = 0 V

Gate to source cutoff voltage VGS(off) 2.0 — 4.0 V VDS = 10 V, ID = 1 mA

Static drain to source on state resistance RDS(on) — 6.5 8.3 mΩ I

D = 15 A, VGS = 10 V Note4

Forward transfer admittance |yfs| — 39 — S ID = 15 A, VDS = 10 V Note4

Input capacitance Ciss — 2000 — pF

Output capacitance Coss — 475 — pF

Reverse transfer capacitance Crss — 125 — pF

VDS = 10 V, VGS = 0 V,

f = 1 MHz

Gate Resistance Rg — 0.5 — Ω

Total gate charge Qg — 27 — nC

Gate to source charge Qgs — 9.0 — nC

Gate to drain charge Qgd — 4.5 — nC

VDD = 25 V, VGS = 10 V,

ID = 30 A

Turn-on delay time td(on) — 12 — ns

Rise time tr — 6.8 — ns

Turn-off delay time td(off) — 32 — ns

Fall time tf — 9.2 — ns

VGS = 10 V, ID = 15 A,

VDD ≅ 30 V, RL = 2 Ω,

Rg = 4.7 Ω

Body–drain diode forward voltage VDF — 0.8 1.1 V IF = 30 A, VGS = 0 V Note4

Body–drain diode reverse recovery time trr — 40 — ns

IF = 30 A, VGS = 0 V

diF/ dt = 100 A/ μs

Notes: 4. Pulse test

RJK0654DPB Preliminary

REJ03G1880-0100 Rev.1.00 Nov 16, 200 9

Page 3 of 6

Main Characteristics

Drain to Source Voltage VDS (V)

Drain Current ID (A)

Typical Output Characteristics

Drain Current ID (A) Drain Current ID (A)

Channel Dissipation Pch (W)

Case Temperature Tc (°C)

Power vs. Temperature Derating

Gate to Source Voltage VGS (V)

Drain to Source Saturation Voltage

VDS (on) (mV)

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

Gate to Source Voltage VGS (V)

Typical Transfer Characteristics

Drain to Source Voltage VDS (V)

Maximum Safe Operation Area

Drain Current ID (A)

Static Drain to Source on State Resistance

vs. Drain Current

0246810

012345

Tc = 75°C

25°C

–25°C

050 100 150 200

= 10 V

Pulse Test

= 3.8 V

11 10 100 1000

400

320

240

160

04 8 12 16 20

Pulse Test

= 20 A

10 A

100

= 10 V

4.2 V

4.6 V

10 V

Pulse Test

0.1 1 10 100

100

1000

0.01

0.1

PW = 10 ms

DC Operation

1 ms

Operation in

this area is

limited by R

DS(on)

Tc = 25°C

1 shot Pulse

5 A

4.4 V

Pulse Test

4.0 V

RJK0654DPB Preliminary

REJ03G1880-0100 Rev.1.00 Nov 16, 200 9

Page 4 of 6

Case Temperature Tc (

Static Drain to Source on State Resistance

vs. Temperature

–25 0 25 50 75 100 125 150

Source to Drain Voltage VSD (V)

Reverse Drain Current IDR (A)

Reverse Drain Current vs.

Source to Drain Voltage

Channel Temperature Tch ( °C)

Repetitive Avalanche Energy EAR (mJ)

Maximum Avalanche Energy vs.

Channel Temperature Derating

25 50 75 100 125 150

00.4 0.8 1.2 1.6 2.0

Pulse Test

Capacitance C (pF)

Drain to Source Voltage VDS (V)

Typical Capacitance vs.

Drain to Source Voltage

010 60504020

10000

1000

100

= 0 V

f = 1 MHz

Crss

Coss

Ciss

Gate Charge Qg (nC)

Drain to Source Voltage VDS (V)

Gate to Source Voltage VGS (V)

Dynamic Input Characteristics

100

10 20 30 40 50

= 30 A

= 50 V

25 V

10 V

= 50 V

25 V

10 V

= 10 V

= 0 V

10 V

Pulse Test

= 15 A

RJK0654DPB Preliminary

REJ03G1880-0100 Rev.1.00 Nov 16, 200 9

Page 5 of 6

D. U. T

IAP

Monitor

VDS

Monitor

VDD

50 Ω

Vin

15 V

VDS

IAP

V(BR)DSS

VDD

EAR = L • IAP2 •

1VDSS

VDSS – VDD

Avalanche Test Circuit Avalanche Waveform

Pulse Width PW (s)

Normalized Transient Thermal Impedance vs. Pulse Width

Normalized Transient Thermal Impedance γs (t)

Vin Monitor

D.U.T.

Vin

10 V

VDS

= 30 V

td(on)

Vin

90% 90%

10%

Vout

td(off)

Vout

Monitor 90%

10%

Switching T ime Test Circuit Switching T ime W aveform

0.3

0.1

0.03

0.01 1 m 10 m 100 m 1 10

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

1shot pulse

10 μ100 μ

Tc = 25°C

PDM

D = PW

θch – c (t) = γ s (t) • θch – c

θch – c = 2.27°C/W, Tc = 25°C

RJK0654DPB Preliminary

REJ03G1880-0100 Rev.1.00 Nov 16, 200 9

Page 6 of 6

Package Dimensions

0.25

1.3 Max

1.0

3.95

1.1 Max

4.9

5.3 Max

4.0 ± 0.2

4.2

3.3

0° – 8°

0.07

+0.03

–0.04

0.20

+0.05

–0.03

0.6

+0.25

–0.20

0.25

+0.05

–0.03

6.1

+0.1

–0.3

Previous Code

PTZZ0005DA-ALFPAKVMASS[Typ.]

0.080gSC-100 RENESAS CodeJEITA Package Code

1.27 0.40 ± 0.06

0.75 Max

0.10

(Ni/Pd/Au plating)

Unit: mm

Package Name

LFPAK

Ordering Information

Part No. Quantity Shipping Container

RJK0654DPB-00-J5 2500 pcs Taping

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