NTE247 (NPN) & NTE248 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE247 (NPN) and NTE248 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general-purpose amplifier and low-frequency switching applications. Features: D High DC Current Gain: hFE = 3500 Typ @ IC = 5A D Collector-Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 100mA D Monolithic Construction with Built-In Base-Emitter Shunt Resistors Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector-Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.857W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.17C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 100 - - V OFF Characteristics Collector-Emitter SustainingVoltage Collector Cutoff Current Emitter Cutoff Current VCEO(sus) IC = 100mA, IB = 0, Note 1 ICEO VCE = 50V, IE = 0 - - 1.0 mA ICEX VCE = 100V, VBE(off) = 1.5V - - 0.5 mA VCE = 100V, VBE(off) = 1.5V, TA = +150C - - 5.0 mA VBE = 5V, IC = 0 - - 2.0 mA IEBO Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle = 2% Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit VCE = 3V, IC = 6A 750 - 18000 VCE = 3V, IC = 12A 100 - - IC = 6A, IB = 24mA - - 2.0 V IC = 12A, IB = 120mA - - 3.0 V ON Characteristics (Note 1) DC Current Gain hFE Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Saturation Voltage VBE(sat) IC = 12A, IB = 120mA - - 4.0 V Base-Emitter ON Voltage VBE(on) VCE = 3V, IC = 6A - - 2.8 V Dynamic Characteristics Small-Signal Current Gain hfe VCE = 3V, IC = 5A, f = 1kHz 300 - - Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio |hfe| VCE = 3V, IC = 5A, f = 1MHz 4.0 - - Output Capacitance NTE247 Cob - - 300 - - 500 MHz pF VCB = 10V, IE = 0, f = 0.1MHz NTE248 pF Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle = 2% NTE247 .135 (3.45) Max C .875 (22.2) Dia Max .350 (8.89) B Seating Plane E .312 (7.93) Min .040 (1.02) 1.187 (30.16) Emitter NTE248 .665 (16.9) .215 (5.45) C .430 (10.92) B .188 (4.8) R Max E Base .525 (13.35) R Max Collector/Case