NTE247 (NPN) & NTE248 (PNP)
Silicon Complementary Transistors
Darlington Power Amplifier
Description:
The NTE247 (NPN) and NTE248 (PNP) are silicon complementary Darlington transistors in a TO3
type case designed for general–purpose amplifier and low–frequency switching applications.
Features:
DHigh DC Current Gain: hFE = 3500 Typ @ IC = 5A
DCollector–Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 100mA
DMonolithic Construction with Built–In Base–Emitter Shunt Resistors
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO 100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Base Voltage, VCB 100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, VEB 5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, IC
Continuous 12A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 120A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, IB200mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (TC = +25°C), PD150W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25°C 0.857W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, TJ–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg –65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, RthJC 1.17°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter SustainingVoltage VCEO(sus) IC = 100mA, IB = 0, Note 1 100 – – V
Collector Cutoff Current ICEO VCE = 50V, IE = 0 – – 1.0 mA
ICEX VCE = 100V, VBE(off) = 1.5V – – 0.5 mA
VCE = 100V, VBE(off) = 1.5V, TA = +150°C – – 5.0 mA
Emitter Cutoff Current IEBO VBE = 5V, IC = 0 – – 2.0 mA
Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain hFE VCE = 3V, IC = 6A 750 –18000
VCE = 3V, IC = 12A 100 – –
Collector–Emitter Saturation Voltage VCE(sat) IC = 6A, IB = 24mA – – 2.0 V
IC = 12A, IB = 120mA – – 3.0 V
Base–Emitter Saturation Voltage VBE(sat) IC = 12A, IB = 120mA – – 4.0 V
Base–Emitter ON Voltage VBE(on) VCE = 3V, IC = 6A – – 2.8 V
Dynamic Characteristics
Small–Signal Current Gain hfe VCE = 3V, IC = 5A, f = 1kHz 300 – –
Magnitude of Common Emitter
Small–Signal Short–Circuit
Forward Current Transfer Ratio
|hfe| VCE = 3V, IC = 5A, f = 1MHz 4.0 – – MHz
Output Capacitance
NTE247 Cob VCB = 10V, IE = 0, f = 0.1MHz – – 300 pF
NTE248 – – 500 pF
Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%
NTE247
NTE248
B
C
E
B
C
E
1.187 (30.16)
.875 (22.2)
Dia Max
.665
(16.9)
.430
(10.92)
Seating
Plane
.040 (1.02).312 (7.93) Min
.135 (3.45) Max
.350 (8.89)
Emitter
Collector/CaseBase
.215 (5.45)
.525 (13.35) R Max
.188 (4.8) R Max
