BUX48A - Motorola / Freescale Semiconductor

3–401

Motorola Bipolar Power Transistor Device Data

  

    

The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,

power switching in inductive circuits where fall time is critical. They are particularly

suited for line–operated SWITCHMODE applications such as:

•Switching Regulators

•Inverters

•Solenoid and Relay Drivers

•Motor Controls

•Deflection Circuits

Fast Turn–Off Times

60 ns Inductive Fall Time — 25

C (Typ)

120 ns Inductive Crossover Time — 25

C (Typ)

Operating Temperature Range –65 to +200

100

C Performance Specified for:

Reverse–Biased SOA with Inductive Loads

Switching Times with Inductive Loads

Saturation Voltage

Leakage Currents (125

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎ

BUX48

ÎÎÎÎÎ

BUX48A

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎÎ

VCEO(sus)

ÎÎÎÎÎ

400

ÎÎÎÎÎ

450

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage (VBE = – 1.5 V)

ÎÎÎÎÎ

VCEX

ÎÎÎÎÎ

850

ÎÎÎÎÎ

1000

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Base Voltage

ÎÎÎÎÎ

VEB

ÎÎÎÎÎÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

— Peak (1)

— Overload

ÎÎÎÎÎ

ICM

IOI

ÎÎÎÎÎÎÎÎÎ

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current — Continuous

— Peak (1)

ÎÎÎÎÎ

IBM

ÎÎÎÎÎÎÎÎÎ

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation — TC = 25

— TC = 100

Derate above 25

ÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎ

175

100

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction Temperature Range

ÎÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎÎÎ

–65 to +200

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

RθJC

ÎÎÎÎÎÎÎÎÎ

ÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Maximum Lead Temperature for Soldering Purposes:

1/8″ from Case for 5 Seconds

ÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎ

275

ÎÎÎ

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle

10%.

SWITCHMODE is a trademark of Motorola, Inc.



SEMICONDUCTOR TECHNICAL DATA Order this document

by BUX48/D

 Motorola, Inc. 1995





15 AMPERES

NPN SILICON

POWER TRANSISTORS

400 AND 450 VOLTS

V(BR)CEO

850–1000 VOLTS

V(BR)CEX

175 WATTS

CASE 1–07

TO–204AA

(TO–3)

REV 7

 

3–402 Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Typ

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (Table 1)

(IC = 200 mA, IB = 0) L = 25 mH BUX48

BUX48A

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

400

450

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCEX = Rated Value, VBE(off) = 1.5 Vdc)

(VCEX = Rated Value, VBE(off) = 1.5 Vdc, TC = 125

ÎÎÎÎ

ICEX

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

0.2

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = Rated VCEX, RBE = 10 Ω) TC = 25

TC = 125

ÎÎÎÎ

ICER

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

0.5

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VEB = 5 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

0.1

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Breakdown Voltage

(IE = 50 mA – IC = 0)

ÎÎÎÎ

V(BR)EBO

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SECOND BREAKDOWN

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Second Breakdown Collector Current with Base Forward Biased

ÎÎÎÎ

IS/b

ÎÎÎÎÎÎÎÎÎÎ

See Figure 12

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Clamped Inductive SOA with Base Reverse Biased

ÎÎÎÎ

RBSOA

ÎÎÎÎÎÎÎÎÎÎ

See Figure 13

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 10 Adc, VCE = 5 Vdc) BUX48

(IC = 8 Adc, VCE = 5 Vdc) BUX48A

ÎÎÎÎ

hFE

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage

(IC = 10 Adc, IB = 2 Adc)

(IC = 15 Adc, IB = 3 Adc) BUX48

(IC = 10 Adc, IB = 2 Adc, TC = 100

(IC = 8 Adc, IB = 1.6 Adc)

(IC = 12 Adc, IB = 2.4 Adc) BUX48A

(IC = 8 Adc, IB = 1.6 Adc, TC = 100

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

1.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter Saturation Voltage

(IC = 10 Adc, IB = 2 Adc) BUX48

(IC = 10 Adc, IB = 2 Adc, TC = 100

(IC = 8 Adc, IB = 1.6 Adc)

(IC = 8 Adc, IB = 1.6 Adc, TC = 100

C) BUX48A

ÎÎÎÎ

VBE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

1.6

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance

(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)

ÎÎÎÎ

Cob

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

350

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SWITCHING CHARACTERISTICS Resistive Load (Table 1)

ÎÎÎÎÎÎÎ

Delay Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

IC = 10 A, IB = 2 A BUX48

IC = 8 A, IB = 1.6 A BUX48A

Duty Cycle = 2%, VBE(off) = 5 V

Tp = 30 µs, VCC = 300 V

ÎÎÎÎ

—

ÎÎÎÎ

0.1

ÎÎÎÎ

0.2

ÎÎÎ

µs

ÎÎÎÎÎÎÎ

Rise Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

IC = 10 A, IB = 2 A BUX48

IC = 8 A, IB = 1.6 A BUX48A

Duty Cycle = 2%, VBE(off) = 5 V

Tp = 30 µs, VCC = 300 V

ÎÎÎÎ

—

ÎÎÎÎ

0.4

ÎÎÎÎ

0.7

ÎÎÎ

ÎÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

IC = 8 A, IB = 1.6 A BUX48A

Duty Cycle = 2%, VBE(off) = 5 V

Tp = 30 µs, VCC = 300 V

ÎÎÎÎ

—

ÎÎÎÎ

1.3

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Tp = 30 µs, VCC = 300 V

ÎÎÎÎ

—

ÎÎÎÎ

0.2

ÎÎÎÎ

0.4

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Inductive Load, Clamped (Table 1)

ÎÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎÎÎ

C = 10 A

IB1 = 2 A BUX48

ÎÎÎÎÎÎ

(TC = 25

ÎÎÎÎ

tsv

ÎÎÎÎ

—

ÎÎÎÎ

1.3

ÎÎÎÎ

—

ÎÎÎ

µs

ÎÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎÎÎ

IC = 10 A

IB1 = 2 A BUX48

ÎÎÎÎÎÎ

(TC = 25

ÎÎÎÎ

tfi

ÎÎÎÎ

—

ÎÎÎÎ

0.06

ÎÎÎÎ

—

ÎÎÎ

ÎÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎÎÎ

IC = 8 A

IB1 = 1.6 A BUX48A

ÎÎÎÎÎÎ

(TC = 100

ÎÎÎÎ

tsv

ÎÎÎÎ

—

ÎÎÎÎ

1.5

ÎÎÎÎ

2.5

ÎÎÎ

ÎÎÎÎÎÎÎ

Crossover Time

ÎÎÎÎÎÎÎÎÎ

IC = 8 A

IB1 = 1.6 A BUX48A

ÎÎÎÎÎÎ

(TC = 100

ÎÎÎÎ

—

ÎÎÎÎ

0.3

ÎÎÎÎ

0.6

ÎÎÎ

ÎÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎÎÎ

IB1 = 1.6 A BUX48A

ÎÎÎÎÎÎ

ÎÎÎÎ

tfi

ÎÎÎÎ

—

ÎÎÎÎ

0.17

ÎÎÎÎ

0.35

ÎÎÎ

(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle

2%.

Vcl = 300 V, VBE(off) = 5 V, Lc = 180µH

 

3–403

Motorola Bipolar Power Transistor Device Data

C, CAPACITANCE (pF)

, COLLECTOR CURRENT ( A)

VBE, BASE–EMITTER VOLTAGE (VOLTS)

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0.1

IC, COLLECTOR CURRENT (AMPS)

0.3 3

0.7

0.5

IC, COLLECTOR CURRENT (AMPS)

0.7

0.5

0.3

0.2

0.3

IC = 5 A

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (AMPS)

12 3 5 8 10 20 30 50

Figure 2. Collector Saturation Region

0.1 IB, BASE CURRENT (AMPS)

0.1 0.3 0.5

0.5

0.3

hFE, DC CURRENT GAIN

2VCE = 5 V

1 2 3 4

Figure 3. Collector–Emitter Saturation Voltage

1011 2 3 7 10 5020 305

Figure 4. Base–Emitter Voltage

Figure 5. Collector Cutoff Region

–0.4

Figure 6. Capacitance

VBE, BASE–EMITTER VOLTAGE (VOLTS)

10–1 –0.2 0 0.2 0.4 0.6

10 k

1VR, REVERSE VOLTAGE (VOLTS)

10 10

1 k

100

100 1000

100

FORWARD

0.1

VCE = 250 V

125

90%

7.5

TC = 25

TJ = 25

TJ = 100

REVERSE

101

102

103

104

Cib

f = 5

10% 10

A 15

90%

10%

TJ = 150

100

Cob

TJ = 25

DC CHARACTERISTICS

 

3–404 Motorola Bipolar Power Transistor Device Data

Table 1. Test Conditions for Dynamic Performance

VCEO(sus) RBSOA AND INDUCTIVE SWITCHING RESISTIVE SWITCHING

INPUT

CONDITIONS

CIRCUIT

VALUES

TEST CIRCUITS

20 1

PW Varied to Attain

IC = 200 mA

Lcoil = 25 mH, VCC = 10 V

Rcoil = 0.7 Ω

Lcoil = 180 µH

Rcoil = 0.05 Ω

VCC = 20 V

VCC = 300 V

RL = 83 Ω

Pulse Width = 10 µs

INDUCTIVE TEST CIRCUIT

TURN–ON TIME

IB1 adjusted to

obtain the forced

hFE desired

TURN–OFF TIME

Use inductive switching

driver as the input to

the resistive test circuit.

t1 Adjusted to

Obtain IC

Test Equipment

Scope — Tektronix

475 or Equivalent

RESISTIVE TEST CIRCUITOUTPUT WAVEFORMS

IB1

Vclamp = 300 V

RB ADJUSTED TO ATTAIN DESIRED IB1

+10 V 220 100

680 pF 100

PULSES

= 3%

2 W

160 D1 22

680 pF

MM3735

1N4934D1 D2 D3 D4

2N3763

160

680 pF 22

0.22

2N6438

+10 V

MR854

0.1

2N6339

MR854

Ib1 ADJUST

dTb ADJUST

Ib2 ADJUST

VCC

VCE

IC(pk) tf Clamped

tft

TIME

VCE or

Vclamp

TUT

VCC

t1 ≈Lcoil (ICpk)

VCC

t2 ≈Lcoil (ICpk)

VClamp

INPUT

Rcoil

Lcoil

VCC

Vclamp

RS =

0.1

Ω

1N4937

EQUIVALENT

TUT

SEE ABOVE FOR

DETAILED CONDITIONS

VBE(off), BASE–EMITTER VOLTAGE (VOLTS)

Figure 7. Inductive Switching Measurements Figure 8. Peak–Reverse Current

1 2 3 4 5 6

, BASE CURRENT (AMPS)IB2(pk)

f = 5

IC = 10 A

trv

TIME

VCE 90% IB1

tsv

IC pk VCE(pk)

90% VCE(pk) 90% IC(pk)

10% VCE(pk) 10%

IC pk 2% IC

tfi tti

 

3–405

Motorola Bipolar Power Transistor Device Data

SWITCHING TIMES NOTE

In resistive switching circuits, rise, fall, and storage times

have been defined and apply to both current and voltage

waveforms since they are in phase. However, for inductive

loads which are common to SWITCHMODE power supplies

and hammer drivers, current and voltage waveforms are not

in phase. Therefore, separate measurements must be made

on each waveform to determine the total switching time. For

this reason, the following new terms have been defined.

tsv = Voltage Storage Time, 90% IB1 to 10% Vclamp

trv = Voltage Rise Time, 10–90% Vclamp

tfi = Current Fall Time, 90–10% IC

tti = Current Tail, 10–2% IC

tc = Crossover Time, 10% Vclamp to 10% IC

An enlarged portion of the inductive switching waveforms

is shown in Figure 7 to aid in the visual identity of these

terms.

For the designer, there is minimal switching loss during

storage time and the predominant switching power losses

occur during the crossover interval and can be obtained

using the standard equation from AN–222:

PSWT = 1/2 VCCIC(tc)f

In general, trv + tfi

]

tc. However, at lower test currents this

relationship may not be valid.

As is common with most switching transistors, resistive

switching is specified at 25

C and has become a benchmark

for designers. However, for designers of high frequency con-

verter circuits, the user oriented specifications which make

this a “SWITCHMODE” transistor are the inductive switching

speeds (tc and tsv) which are guaranteed at 100

Figure 9. Storage Time, tsv

IC, COLLECTOR CURRENT (AMPS)

2 5

0.1

Figure 10. Crossover and Fall Times

0.7

0.5

50 IC, COLLECTOR CURRENT (AMPS)

3 7

Figure 11a. Turn–Off Times versus Forced Gain

f, FORCED GAIN

0.01 1 2 4 5

0.5

0.3

0.2

Figure 11b. Turn–Off Times versus Ib2/Ib1

Ib2/Ib1

0.1

TC = 25

IC = 10 A

VBE(off) = 5 V

0.01

0.5

0.2

0.3

0.1

t, TIME ( s)

0.3

0.2

2010 30

f = 5

t, TIME ( s)

0.05

0.02

0.03

1 2 5 503 7 2010 30

f = 5

tfi

0.05

0.03

0.02

6 8 97 10

tsv

tfi

t, TIME ( s)

0.01

0.5

0.3

0.2

0.1

0.05

0.03

0.02

0 1 2 4 53 6 8 97 10

TC = 25

IC = 10 A

f = 5

tsv

tfi

TC = 25

TC = 100

CTC = 100

TC = 100

TC = 25

INDUCTIVE SWITCHING

 

3–406 Motorola Bipolar Power Transistor Device Data

The Safe Operating Area figures shown in Figures 12 and 13 are

specified for these devices under the test conditions shown.

Figure 12. Forward Bias Safe Operating Area

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

5 50

0.01

0.5

100010 100

FIgure 13. Reverse Bias Safe Operating Area

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0200 400

600

TC = 25

TC = 100

IC/IB1

≥

IC, COLLECTOR CURRENT (AMPS)

0.1

200

DC 1 ms

IC, COLLECTOR CURRENT (AMPS)

≤

0.7

LIMIT ONLY

FOR TURN ON

2 20 500

0.2

0.05

0.02

800 1000

VBE(off) = 5 V

BUX48 BUX48A

SAFE OPERATING AREA INFORMATION

FORWARD BIAS

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 12 is based on TC = 25

C; TJ(pk) is

variable depending on power level. Second breakdown pulse

limits are valid for duty cycles to 10% but must be derated

when TC

C. Second breakdown limitations do not der-

ate the same as thermal limitations. Allowable current at the

voltages shown on Figure 12 may be found at any case tem-

perature by using the appropriate curve on Figure 14.

TJ(pk) may be calculated from the data in Figure 1 1. At high

case temperatures, thermal limitations will reduce the power

that can be handled to values less than the limitations im-

posed by second breakdown.

REVERSE BIAS

For inductive loads, high voltage and high current must be

sustained simultaneously during turn–off, in most cases, with

the base to emitter junction reverse biased. Under these

conditions the collector voltage must be held to a safe level

at or below a specific value of collector current. This can be

accomplished by several means such as active clamping,

RC snubbing, load line shaping, etc. The safe level for these

devices is specified as Reverse Bias Safe Operating Area

and represents the voltage–current conditions during re-

verse biased turn–off. This rating is verified under clamped

conditions so that the device is never subjected to an ava-

lanche mode. Figure 13 gives RBSOA characteristics.

Figure 14. Power Derating

TC, CASE TEMPERATURE (

040 80

100

120

POWER DERATING FACTOR (%)

160 200

SECOND BREAKDOWN

DERATING

THERMAL

DERATING

 

3–407

Motorola Bipolar Power Transistor Device Data

t, TIME (ms)

0.01

0.02

0.5

0.2

0.1

0.05

0.02

r(t), EFFECTIVE TRANSIENT THERMAL

0.05 1 2 5 10 20 50 100 200 500

JC(t) = r(t) R

JC = 1

C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk) R

JC(t)

P(pk)

t1t2

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.01

SINGLE PULSE

0.1

0.1 0.50.2

RESISTANCE (NORMALIZED)

1000 2000

Figure 15. Thermal Response

SINGLE

PULSE

0.05

0.02

OVERLOAD CHARACTERISTICS

Figure 16. Rated Overload Safe Operating Area

(OLSOA)

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

300

100

500100 400

TC = 25

IC, COLLECTOR CURRENT (AMPS)

450200

tp = 10

sBUX48

BUX48A

OLSOA

OLSOA applies when maximum collector current is limited

and known. A good example is a circuit where an inductor is

inserted between the transistor and the bus, which limits the

rate of rise of collector current to a known value. If the tran-

sistor is then turned off within a specified amount of time, the

magnitude of collector current is also known.

Maximum allowable collector–emitter voltage versus col-

lector current is plotted for several pulse widths. (Pulse width

is defined as the time lag between the fault condition and the

removal of base drive.) Storage time of the transistor has

been factored into the curve. Therefore, with bus voltage and

maximum collector current known, Figure 16 defines the

maximum time which can be allowed for fault detection and

shutdown of base drive.

OLSOA is measured in a common–base circuit (Figure 18)

which allows precise definition of collector–emitter voltage

and collector current. This is the same circuit that is used to

measure forward–bias safe operating area.

Figure 17. IC = f(dV/dt)

dV/dt (KV/

2 4

6 8 10

IC (AMP)

500

500 V

VEE

VCC

Figure 18. Overload SOA Test Circuit

Notes:

•VCE = VCC + VBE

•Adjust pulsed current source

for desired IC, tp

RBE = 100

Ω

RBE = 10

Ω

RBE = 2.2

Ω

RBE = 0

 

3–408 Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH

REFERENCED TO–204AA OUTLINE SHALL APPLY.

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A1.550 REF 39.37 REF

B––– 1.050 ––– 26.67

C0.250 0.335 6.35 8.51

D0.038 0.043 0.97 1.09

E0.055 0.070 1.40 1.77

G0.430 BSC 10.92 BSC

H0.215 BSC 5.46 BSC

K0.440 0.480 11.18 12.19

L0.665 BSC 16.89 BSC

N––– 0.830 ––– 21.08

Q0.151 0.165 3.84 4.19

U1.187 BSC 30.15 BSC

V0.131 0.188 3.33 4.77

–T–

SEATING

PLANE

2 PLD

0.13 (0.005) Y M

0.13 (0.005) T

–Q–

–Y–

CASE 1–07

TO–204AA (TO–3)

ISSUE Z

How to reach us:

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BUX48/D

*BUX48/D*

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