AS7C33128NTD32B-200TQC - Alliance Semiconductor

February 2005

AS7C33128NTD32B

AS7C33128NTD36B

3.3V 128K×32/36 Pipelined SRAM with NTDTM

2/8/05; v.1.5 Alliance Semiconductor P. 1 of 18

Features

• Organization: 131,072 words × 32 or 36 bits

•NTD

™ architecture for efficient bus operation

• Fast clock speeds to 200 MHz

• Fast clock to data access: 3.0/3.5/4.0 ns

•Fast OE

access time: 3.0/3.5/4.0 ns

• Fully synchronous operation

• Asynchronous output enable control

• Available in 100-pin TQFP package

• Byte write enables

• Clock enable for operation hold

• Multiple chip enables for easy expansion

• 3.3V core power supply

• 2.5V or 3.3V I/O operation with separate VDDQ

• Self-timed write cycles

• Interleaved or linear burst modes

• Snooze mode for reduced power standby

Selection Guide

-200 -166 -133 Units

Minimum cycle time 5 6 7.5 ns

Maximum clock frequency 200 166 133 MHz

Maximum clock access time 3.0 3.5 4 ns

Maximum operating current 375 350 325 mA

Maximum standby current 135 120 110 mA

Maximum CMOS standby current (DC) 30 30 30 mA

Logic block diagram

Write Data Registers

Address

CLK

Output

DQ [a:d]

CLK

CE0

CE1

CE2

A[16:0]

CLK

CEN

Control

CLK

logic

Data

CLK

Input

32/36

128K x 32/36

SRAM

Array

R/W

DQ [a:d]

BWa

BWc

BWb

BWd

CLK

ADV / LD

LBO

Burst logic

addr. registers

Write delay 17

CLK

17 17

32/36

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4 Mb Synchronous SRAM products list1,2

1 Core Power Supply: VDD = 3.3V + 0.165V

2 I/O Supply Voltage: VDDQ = 3.3V + 0.165V for 3.3V I/O

VDDQ = 2.5V + 0.125V for 2.5V I/O

PL-SCD : Pipelined Burst Synchronous SRAM - Single Cycle Deselect

PL-DCD : Pipelined Burst Synchronous SRAM - Double Cycle Deselect

FT : Flow-through Burst Synchronous SRAM

NTD1-PL : Pipelined Burst Synchronous SRAM with NTDTM

NTD-FT : Flow-through Burst Synchronous SRAM with NTDTM

Org Part Number Mode Speed

256KX18 AS7C33256PFS18B PL-SCD 200/166/133 MHz

128KX32

AS7C33128PFS32B PL-SCD 200/166/133 MHz

128KX36 AS7C33128PFS36B PL-SCD 200/166/133 MHz

256KX18 AS7C33256PFD18B PL-DCD 200/166/133 MHz

128KX32

AS7C33128PFD32B PL-DCD 200/166/133 MHz

128KX36 AS7C33128PFD36B PL-DCD 200/166/133 MHz

256KX18 AS7C33256FT18B FT 6.5/7.5/8.0/10 ns

128KX32

AS7C33128FT32B FT 6.5/7.5/8.0/10 ns

128KX36 AS7C33128FT36B FT 6.5/7.5/8.0/10 ns

256KX18 AS7C33256NTD18B NTD-PL 200/166/133 MHz

128KX32

AS7C33128NTD32B NTD-PL 200/166/133 MHz

128KX36 AS7C33128NTD36B NTD-PL 200/166/133 MHz

256KX18 AS7C33256NTF18B NTD-FT 6.5/7.5/8.0/10 ns

128KX32

AS7C33128NTF32B NTD-FT 6.5/7.5/8.0/10 ns

128KX36 AS7C33128NTF36B NTD-FT 6.5/7.5/8.0/10 ns

1. NTD: No Turnaround Delay. NTDTM is a trademark of Alliance Semiconductor Corporation. All trademarks mentioned in this document are the property

of their respective owners.

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AS7C33128NTD36B

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Pin arrangement for TQFP (top view)

LBO

100

CE0

CE1

BWd

BWc

BWb

BWa

CE2

CLK

R/W

CEN

ADV/LD

TQFP 14x20mm

DQPc/NC

DQc0

DQc1

DDQ

SSQ

DQc2

DQc3

DQc4

DQc5

SSQ

DDQ

DQc6

DQc7

DQd0

DQd1

DDQ

SSQ

DQd2

DQd3

DQd4

DQd5

SSQ

DDQ

DQd6

DQd7

DQPd/NC

DQPb/NC

DQb7

DQb6

DDQ

SSQ

DQb5

DQb4

DQb3

DQb2

SSQ

DDQ

DQb1

DQb0

DQa7

DQa6

DDQ

SSQ

DQa5

DQa4

DQa3

DQa2

SSQ

DDQ

DQa1

DQa0

DQPa/NC

Note: Pins 1,30,51,80 are NC for x32

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Functional description

The AS7C33128NTD36B family is a high performance CMOS 4 Mbit synchronous Static Random Access Memory (SRAM)

organized as 131,072 words × 32 or 36 bits and incorporates a LATE LATE Write.

This variation of the 4Mb sychronous SRAM uses the No Turnaround Delay (NTD™) architecture, featuring an enhanced

write operation that improves bandwidth over pipeline burst devices. In a normal pipeline burst device, the write data,

command, and address are all applied to the device on the same clock edge. If a read command follows this write command,

the system must wait for two 'dead' cycles for valid data to become available. These dead cycles can significantly reduce

overall bandwidth for applications requiring random access or read-modify-write operations.

NTD™ devices use the memory bus more efficiently by introducing a write 'latency' which matches the two (one) cycle

pipeline (flowthrough) read latency. Write data is applied two cycles after the write command and address, allowing the read

pipeline to clear. With NTD™, write and read operations can be used in any order without producing dead bus cycles.

Assert R/W low to perform write cycles. Byte write enable controls write access to specific bytes, or can be tied low for full

32/36 bit writes. Write enable signals, along with the write address, are registered on a rising edge of the clock. Write data is

applied to the device two clock cycles later. Unlike some asynchronous SRAMs, output enable OE does not need to be toggled

for write operations; it can be tied low for normal operations. Outputs go to a high impedance state when the device is de-

selected by any of the three chip enable inputs (refer to synchronous truth table on page 6.) In pipeline mode, a two cycle

deselect latency allows pending read or write operations to be completed.

Use the ADV (burst advance) input to perform burst read, write and deselect operations. When ADV is high, external

addresses, chip select, R/W pins are ignored, and internal address counters increment in the count sequence specified by the

LBO control. Any device operations, including burst, can be stalled using the CEN=1, the clock enable input.

The AS7C33128NTD36B and AS7C33128NTD32B operate with a 3.3V ± 5% power supply for the device core (VDD). DQ

circuits use a separate power supply (VDDQ) that operates across 3.3V or 2.5V ranges. These devices are available in a 100-pin

14×20 mm TQFP package.

TQFP Capacitance

*Guranteed not tested

TQFP thermal resistance

Parameter Symbol Test conditions Min Max Unit

Input capacitance CIN*Vin = 0V - 5 pF

I/O capacitance CI/O*Vin = Vout = 0V - 7 pF

Description Conditions Symbol Typical Units

Thermal resistance

(junction to ambient)1

1 This parameter is sampled

Test conditions follow standard test methods and

procedures for measuring thermal impedance,

per EIA/JESD51

1–layer θJA 40 °C/W

4–layer θJA 22 °C/W

Thermal resistance

(junction to top of case)1θJC 8°C/W

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Signal descriptions

Snooze Mode

SNOOZE MODE is a low current, power-down mode in which the device is deselected and current is reduced to ISB2. The duration of SNOOZE

MODE is dictated by the length of time the ZZ is in a High state.

The ZZ pin is an asynchronous, active high input that causes the device to enter SNOOZE MODE.

When the ZZ pin becomes a logic High, ISB2 is guaranteed after the time tZZI is met. After entering SNOOZE MODE, all inputs except ZZ is

disabled and all outputs go to High-Z. Any operation pending when entering SNOOZE MODE is not guaranteed to successfully complete.

Therefore, SNOOZE MODE (READ or WRITE) must not be initiated until valid pending operations are completed. Similarly, when exiting

SNOOZE MODE during tPUS, only a DESELECT or READ cycle should be given while the SRAM is transitioning out of SNOOZE MODE.

Burst order

Signal I/O Properties Description

CLK I CLOCK Clock. All inputs except OE, LBO, and ZZ are synchronous to this clock.

CEN I SYNC Clock enable. When de-asserted high, the clock input signal is masked.

A, A0, A1 I SYNC Address. Sampled when all chip enables are active and ADV/LD is asserted.

DQ[a,b,c,d] I/O SYNC Data. Driven as output when the chip is enabled and OE is active.

CE0, CE1,

CE2 ISYNC

Synchronous chip enables. Sampled at the rising edge of CLK, when ADV/LD is asserted. Are

ignored when ADV/LD is high.

ADV/LD ISYNC

Advance or Load. When sampled high, the internal burst address counter will increment in the

order defined by the LBO input value. When low, a new address is loaded.

R/W ISYNC

A high during LOAD initiates a READ operation. A low during LOAD initiates a WRITE

operation. Is ignored when ADV/LD is high.

BW[a,b,c,d] ISYNC

Byte write enables. Used to control write on individual bytes. Sampled along with WRITE

command and BURST WRITE.

OE I ASYNC Asynchronous output enable. I/O pins are not driven when OE is inactive.

LBO ISTATIC

Selects Burst mode. When tied to VDD or left floating, device follows interleaved Burst order. When

driven Low, device follows linear Burst order. This signal is internally pulled High.

ZZ I ASYNC Snooze. Places device in low power mode; data is retained. Connect to GND if unused.

NC - - No connect

Interleaved burst order (LBO = 1) Linear burst order (LBO = 0)

A1 A0 A1 A0 A1 A0 A1 A0 A1 A0 A1 A0 A1 A0 A1 A0

Starting address0 00 11 01 1 Starting Address0 00 11 01 1

First increment 0 1 0 0 1 1 1 0 First increment 0 1 1 0 1 1 0 0

Second increment 1 0 1 1 0 0 0 1 Second increment 1 0 1 1 0 0 0 1

Third increment 1 1 1 0 0 1 0 0 Third increment 1 1 0 0 0 1 1 0

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Synchronous truth table[5,6,7,8,9,11]

Key: X = Don’t Care, H = HIGH, L = LOW. BWn = H means all byte write signals (BWa, BWb, BWc, and BWd) are HIGH. BWn = L means one or more byte write signals are LOW.

Notes:

1 CONTINUE BURST cycles, whether READ or WRITE, use the same control inputs. The type of cycle performed (READ or WRITE) is chose in the initial BEGIN BURST cycle.

A CONINUE DESELECT cycle can only be entered if a DESELECT CYCLE is executed first.

2 DUMMY READ and WRITE ABORT cycles can be considered NOPs because the device performs no external operation. A WRITE ABORT means a WRITE command is given,

but no operation is performed.

3 OE may be wired LOW to minimize the number of control signal to the SRAM. The device will automatically turn off the output drivers during a WRITE cycle. OE may be used

when the bus turn-on and turn-off times do not meet an application’s requirements.

4 If an INHIBIT CLOCK command occurs during a READ operation, the DQ bus will remain active (Low-Z). If it occurs during a WRITE cycle, the bus will remain in High-Z. No

WRITE operations will be performed during the INHIBIT CLOCK cycle.

5 BWa enables WRITEs to byte “a” (DQa pins); BWb enables WRITEs to byte “b” (DQb pins); BWc enables WRITEs to byte “c” (DQc pins); BWd enables WRITEs to byte “d”

(DQd pins).

6 All inputs except OE and ZZ must meet setup and hold times around the rising edge (LOW to HIGH) of CLK.

7 Wait states are inserted by setting CEN HIGH.

8 This device contains circuitry that will ensure that the outputs will be in High-Z during power-up.

9 The device incorporates a 2-bit burst counter. Address wraps to the initial address every fourth BURST CYCLE.

10 The address counter is incremented for all CONTINUE BURST cycles.

11 ZZ pin is always Low.

CE0 CE1 CE2 ADV/LD R/W BWnOE CEN

Address

source CLK Operation DQ Notes

H X X L X X X L NA L to H DESELECT Cycle High-Z

X X H L X X X L NA L to H DESELECT Cycle High-Z

X L X L X X X L NA L to H DESELECT Cycle High-Z

X X X H X X X L NA L to H CONTINUE DESELECT Cycle High-Z 1

L H L L H X L L External L to H READ Cycle (Begin Burst) Q

X X X H X X L L Next L to H READ Cycle (Continue Burst) Q 1,10

L H L L H X H L External L to H NOP/DUMMY READ (Begin Burst) High-Z 2

X X X H X X H L Next L to H DUMMY READ (Continue Burst) High-Z 1,2,10

L H L L L L X L External L to H WRITE CYCLE (Begin Burst) D 3

X X X H X L X L Next L to H WRITE CYCLE (Continue Burst) D 1,3,10

L H L L L H X L External L to H NOP/WRITE ABORT (Begin Burst) High-Z 2,3

X X X H X H X L Next L to H WRITE ABORT (Continue Burst) High-Z 1,2,3,

X X X X X X X H Current L to H INHIBIT CLOCK - 4

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State Diagram for NTD SRAM

Absolute maximum ratings

Stresses greater than those listed under “Absolute maximum ratings” may cause permanent damage to the device. This is a stress rating only, and functional

operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to

absolute maximum rating conditions may affect reliability.

Recommended operating conditions at 3.3V I/O

Recommended operating conditions at 2.5V I/O

Parameter Symbol Min Max Unit

Power supply voltage relative to GND VDD, VDDQ –0.5 +4.6 V

Input voltage relative to GND (input pins) VIN –0.5 VDD + 0.5 V

Input voltage relative to GND (I/O pins) VIN –0.5 VDDQ + 0.5 V

Power dissipation Pd–1.8W

Short circuit output current IOUT – 20 mA

Storage temperature Tstg –65 +150 oC

Temperature under bias Tbias –65 +135 oC

Parameter Symbol Min Nominal Max Unit

Supply voltage for inputs VDD 3.135 3.3 3.465 V

Supply voltage for I/O VDDQ 3.135 3.3 3.465 V

Ground supply Vss 0 0 0 V

Parameter Symbol Min Nominal Max Unit

Supply voltage for inputs VDD 3.135 3.3 3.465 V

Supply voltage for I/O VDDQ 2.375 2.5 2.625 V

Ground supply Vss 0 0 0 V

Dsel

Read

Burst

Write

Read

Write

Burst

Read

Write

Dsel

Read

Burst

Write

Dsel

Write

Burst

Dsel

Burst

Write

Read

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DC electrical characteristics for 3.3V I/O operation

DC electrical characteristics for 2.5V I/O operation

† LBO and ZZ pins have an internal pull-up or pull-down, and input leakage = ±10 µA.

*VIH max < VDD +1.5V for pulse width less than 0.2 X tCYC

**VIL min = -1.5 for pulse width less than 0.2 X tCYC

IDD operating conditions and maximum limits

Parameter Sym Conditions Min Max Unit

Input leakage current† |ILI|V

DD = Max, 0V < VIN < VDD -2 2 µA

Output leakage current |ILO|OE ≥ VIH, VDD = Max, 0V < VOUT < VDDQ -2 2 µA

Input high (logic 1) voltage VIH

Address and control pins 2* VDD+0.3

I/O pins 2* VDDQ+0.3

Input low (logic 0) voltage VIL

Address and control pins -0.3** 0.8

I/O pins -0.5** 0.8

Output high voltage VOH IOH = –4 mA, VDDQ = 3.135V 2.4 – V

Output low voltage VOL IOL = 8 mA, VDDQ = 3.465V – 0.4 V

Parameter Sym Conditions Min Max Unit

Input leakage current† |ILI|V

DD = Max, 0V < VIN < VDD -2 2 µA

Output leakage current |ILO|OE ≥ VIH, VDD = Max, 0V < VOUT < VDDQ -2 2 µA

Input high (logic 1) voltage VIH

Address and control pins 1.7* VDD+0.3 V

I/O pins 1.7* VDDQ+0.3 V

Input low (logic 0) voltage VIL

Address and control pins -0.3** 0.7 V

I/O pins -0.3** 0.7 V

Output high voltage VOH IOH = –4 mA, VDDQ = 2.375V 1.7 – V

Output low voltage VOL IOL = 8 mA, VDDQ = 2.625V – 0.7 V

Parameter Sym Test conditions -200 -166 -133 Unit

Operating power supply

current1

1 ICC given with no output loading. ICC increases with faster cycle times and greater output loading.

ICC

CE0 < VIL, CE1 > VIH, CE2 < VIL, f = fMax,

IOUT = 0 mA, ZZ < VIL

375 350 325 mA

Standby power supply

current

ISB

All VIN ≤ 0.2V or >

– 0.2V,

Deselected,

f = fMax, ZZ < VIL

135 120 110

ISB1

Deselected, f = 0, ZZ < 0.2V,

all VIN ≤ 0.2V or ≥ VDD – 0.2V 30 30 30

ISB2

Deselected, f = f

Max

, ZZ

≥

– 0.2V,

all VIN ≤ VIL or ≥ VIH

30 30 30

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Snooze Mode Electrical Characteristics

Timing characteristics over operating range

Parameter Sym

-200 -166 -133

Unit Notes1

1 See “Notes” on page 15.

Min Max Min Max Min Max

Clock frequency fMAX – 200 - 166 - 133 MHz

Cycle time tCYC 5 – 6 - 7.5 - ns

Clock access time tCD – 3.0 - 3.5 - 4.0 ns

Output enable Low to data valid tOE – 3.0 - 3.5 - 4.0 ns

Clock High to output Low Z tLZC 0 – 0 - 0 - ns 2,3,4

Data output invalid from clock High tOH 1.5–1.5-1.5- ns 4

Output enable Low to output Low Z tLZOE 0 – 0 - 0 - ns 2,3,4

Output enable High to output High Z tHZOE – 3.0 - 3.5 - 4.0 ns 2,3,4

Clock High to output High Z tHZC – 3.0 - 3.5 - 4.0 ns 2,3,4

Clock High to output High Z tHZCN – 1.5 - 1.5 - 2.0 ns 5

Clock High pulse width tCH 2.0–2.4-2.5- ns 6

Clock Low pulse width tCL 2.3–2.4-2.5- ns 6

Address setup to clock High tAS 1.4–1.5-1.5- ns 7

Data setup to clock High tDS 1.4–1.5-1.5- ns 7

Write setup to clock High tWS 1.4–1.5-1.5- ns 7

Chip select setup to clock High tCSS 1.4–1.5-1.5- ns 7

Clock enable setup to clock High tCENS 1.4–1.5-1.5- ns 7

ADV/LD setup to clock High tADVS 1.4–1.5-1.5- ns 7

Address hold from clock High tAH 0.4–0.5-0.5- ns 7

Data hold from clock High tDH 0.4–0.5-0.5- ns 7

Write hold from clock High tWH 0.4–0.5-0.5- ns 7

ADV/LD hold from clock High tADVH 0.4–0.5-0.5- ns 7

Clock enable hold from clock High tCENH 0.4–0.5-0.5- ns 7

Chip select hold from clock High tCSH 0.4–0.5-0.5- ns 7

Description Conditions Symbol Min Max Units

Current during Snooze Mode ZZ > VIH ISB2 30 mA

ZZ active to input ignored tPDS 2cycle

ZZ inactive to input sampled tPUS 2cycle

ZZ active to SNOOZE current tZZI 2cycle

ZZ inactive to exit SNOOZE current tRZZI 0cycle

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Key to switching waveforms

Timing waveform of read cycle

Undefined

Falling inputRising input don’t care

tCH tCYC

tCL

tAS

CLK

CEN

R/W

tCEH

A1 A2 A3

Address

tAH

tCES

tWS tWH

CE0,CE2

tADVS

tCSH

Dout

CE1

tADVH

tOE

tLZOE

tHZOE

Q(A1)

Q(A2Y‘01)

Q(A2) Q(A3)

tHLZC

ADV/LD

BWn

tWS tWH

Q(A2Y‘10)

Q(A2Y‘11)

Read

Q(A1)

DSEL Read

Q(A2)

Continue

Read

Q(A2Y‘01)

Continue

Read

Q(A2Y‘10)

Continue

Read

Q(A2Y‘11)

Inhibit

Clock

Read

Q(A3)

Continue

Read

Q(A3Y‘01)

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Timing waveform of write cycle

tCH tCYC

tCL

tAS

CLK

CEN

R/W

tCEH

A1 A2 A3

Address

tAH

tCES

CE0,CE2

tADVS

tCSH

Din

CE1

tADVH

tHZOE

D(A1) D(A2) D(A3)

tDS

ADV/LD

tDH

Q(n-2)

Dout

BWn

Q(n-1)

D(A2Y‘01) D(A2Y‘10) D(A2Y‘11)

Write

D(A1)

DSEL Write

D(A2)

Continue

Write

D(A2Y‘01)

Continue

Write

D(A2Y‘10)

Continue

Write

D(A2Y‘11)

Inhibit

Clock

Write

D(A3)

Continue

Write

D(A3Y‘01)

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Timing waveform of read/write cycle

Note: Ý = XOR when LBO = high/no connect. Ý = ADD when LBO = low. BW[a:d] is don’t care.

tCH tCYC

tCL

tCENS

tOH tOE

CLK

CEN

CE0, CE2

ADV/LD

R/W

ADDRESS

D/Q

Command

tHZOE

BWn

A2A1 A3 A5A4

D(A1) D(A5) Q(A6)

D(A2)

D(A2

01)

Q(A3) Q(A4)

Q(A4

)

tCENH

tDS tDH tLZC

tCD

tHZC

tLZOE

Read

Q(A3) Read

Q(A4)

Burst

Read

Q(A4Ý01)

Write

D(A5)

Read

Q(A6)

Write

D(A7)

DSEL

tCSS

tADVH

tWS tWH

CE1

Write

D(A1)

Write

D(A2)

tADVS

tCSH

tAS tAH

Burst

Write

D(A2Ý01)

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NOP, stall and deselect cycles

Note: Ý = XOR when LBO = high/no connect; Ý = ADD when LBO = low. OE is low.

CLK

CEN

CE0, CE2

ADV/LD

R/W

Address

D/Q

Command

BWn

A1 A2

Q(A1) D(A2)

Q(A1

01) Q(A1

10)

Burst

Q(A1Ý01

)

STALL DSEL Burst

DSEL

Write

D(A2)

Burst

NOP

D(A2Ý01

)

Write

NOP

D(A3)

Read

Q(A1) Burst

Q(A1Ý10

)

Burst

D(A2Ý10)

CE1

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Timing waveform of snooze mode

CLK

All inputs

tZZI

Isupply

(except ZZ)

Dout

tPUS

ZZ recovery cycle

ISB2

tRZZI

ZZ setup cycle

Deselect or Read Only Deselect or Read Only

Normal

operation

Cycle

High-Z

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AC test conditions

Notes

Z0=50Ω

Dout

50Ω

VL=1.5V

Figure B: Output load (A)

30 pF*

Figure A: Input waveform

10%

90%

VSS

90%

10%

+3.0V

• Output Load: see Figure B,

except for tLZC, tLZOE, tHZOE, tHZC see Figure C.

• Input pulse level: VSS to 3V. See Figure A.

• Input rise and fall time (Measured at 0.3V and 2.7V): 2 ns. See Figure A.

• Input and output timing reference levels: 1.5V.

353

Ω / 1538Ω

5 pF*

319

Ω / 1667Ω

OUT

GND

Figure C: Output load (B)

*including scope

and jig capacitance

Thevenin equivalent:

+3.3V for 3.3V I/O;

/+2.5V for 2.5V I/O

1 For test conditions, see AC Test Conditions, Figures A, B, C.

2 This parameter measured with output load condition in Figure C

3 This parameter is sampled and not 100% tested.

HZOE is less than tLZOE; and tHZC is less than tLZC at any given temper-

ature and voltage.

5tHZCN is a ‘no load’ parameter to indicate exactly when SRAM outputs

have stopped driving.

CH measured as HIGH above VIH, and tCL measured as LOW below

VIL

7 This is a synchronous device. All addresses must meet the specified

setup and hold times for all rising edges of CLK. All other synchronous

inputs must meet the setup and hold times with stable logic levels for all

rising edges of CLK when chip is enabled.

AS7C33128NTD32B

AS7C33128NTD36B

2/8/05; v.1.5 Alliance Semiconductor P. 16 of 18

Package Dimensions

100-pin quad flat pack (TQFP)

He E

A1 A2

TQFP

Min Max

A1 0.05 0.15

A2 1.35 1.45

b 0.22 0.38

c 0.09 0.20

D 13.90 14.10

E 19.90 20.10

e 0.65 nominal

Hd 15.90 16.10

He 21.90 22.10

L 0.45 0.75

L1 1.00 nominal

α0° 7°

Dimensions in millimeters

AS7C33128NTD32B

AS7C33128NTD36B

2/8/05; v.1.5 Alliance Semiconductor P. 17 of 18

Note: Add suffix ‘N’ to the above part number for lead free parts (Ex. AS7C33128NTD32B-166TQCN)

1.Alliance Semiconductor SRAM prefix

2.Operating voltage: 33=3.3V

3.Organization:

128=128

4.NTDTM=No Turn-around Delay, Pipelined mode.

5.Organization: 32=x32; 36=x36

6.Production version: B = Product revision

7.Clock speed (MHz)

8.Package type: TQ=TQFP

9.Operating temperature: C=Commercial (

C to 70

C); I=Industrial (

-40

C to 85

10. N = Lead free part

Ordering information

Package Width -200 -166 -133

TQFP ×32 AS7C33128NTD32B-200TQC AS7C33128NTD32B-166TQC AS7C33128NTD32B-133TQC

TQFP ×36 AS7C33128NTD36B-200TQC AS7C33128NTD36B-166TQC AS7C33128NTD36B-133TQC

TQFP ×32 AS7C33128NTD32B-200TQI AS7C33128NTD32B-166TQI AS7C33128NTD32B-133TQI

TQFP ×36 AS7C33128NTD36B-200TQI AS7C33128NTD36B-166TQI AS7C33128NTD36B-133TQI

Part numbering guide

AS7C 33 128 NTD 32/36 B –XXX TQ C/I X

45678

910

Alliance Semiconductor Corporation

2575, Augustine Drive,

Santa Clara, CA 95054

Tel: 408 - 855 - 4900

Fax: 408 - 855 - 4999

www.alsc.com

Part Number: AS7C33128NTD32B /

AS7C33128NTD36B

Document Version: v.1.5

trademarks of Alliance. All other brand and product names may be the trademarks of their respective companies. Alliance reserves the right to make

changes to this document and its products at any time without notice. Alliance assumes no responsibility for any errors that may appear in this document.

The data contained herein represents Alliance's best data and/or estimates at the time of issuance. Alliance reserves the right to change or correct this

data at any time, without notice. If the product described herein is under development, significant changes to these specifications are possible. The

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AS7C33128NTD32B

AS7C33128NTD36B