SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 - AUGUST 1995
PARTMARKING DETAILS 
BCW65A  EA BCW65AR  4V
BCW65B  EB BCW65BR  5V
BCW65C  EC BCW65CR  6V
BCW66F  EF BCW66FR  7P
BCW66G  EG BCW66GR  5T
BCW66H  EH BCW66HR  7M
COMPLEMENTARY TYPES
BCW65  BCW67
BCW66  BCW68
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL BCW65 BCW66 UNIT
Collector-Base Voltage VCBO 60 75 V
Collector-Emitter Voltage VCEO 32 45 V
Emitter-Base Voltage VEBO 5V
Continuous Collector Current IC800 mA
Peak Collector Current(10ms) ICM 1000 mA
Base Current IB100 mA
Power Dissipation at Tamb
=25°C Ptot 330 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
BCW65
BCW66
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Emitter
Breakdown Voltage
BCW65
BCW66
V(BR)CEO 32
45
VI
CEO
=10mA
ICEO
=10mA
BCW65
BCW66
V(BR)CES 60
75
VIC=10µA
IC
=10µA
Emitter-Base Breakdown Voltage V(BR)EBO 5V
IEBO
=10µA
Collector-Emitter
Cut-off Current
BCW65
BCW66
ICES 20
20
20
20
nA
µA
nA
µA
VCES
= 32V
VCES
= 32V ,Tamb
=150o
C
VCES
= 45V
VCES
= 45V ,Tamb
=150o
C
Emitter-Base Cut-Off Current IEBO 20 nA VEBO
=4V
Collector-Emitter Saturation Voltage VCE(sat) 0.3
0.7
V
V
IC
=100mA, IB
= 10mA
IC
= 500mA, IB
=50mA*
Base-Emitter Saturation Voltage VBE(SAT) 2 V I
C
=500mA, IB
=50mA*
Static
Forward
Current
Transfer
BCW65A
BCW66F
hFE 35
75
100
35
160 250
IC
=100µA, VCE =10V
IC
= 10mA, VCE = 1V
IC
=100mA, VCE = 1V*
IC
=500mA, VCE = 2V*
BCW65B
BCW66G
hFE 50
110
160
60
250 400
IC
=100µA, VCE =10V
IC
= 10mA, VCE = 1V
IC
=100mA, VCE = 1V*
IC
=500mA, VCE = 2V*
BCW65C
BCW66H
hFE 80
180
250
100
350 630
IC
=100µA, VCE =10V
IC
= 10mA, VCE = 1V
IC
=100mA, VCE = 1V*
IC
=500mA, VCE = 2V*
Transition Frequency fT100 MHz IC
=20mA, VCE =10V
f = 100MHz
Collector-Base Capacitance Ccbo 8 12pFV
CBO =10V, f =1MHz
Emitter-Base Capacitance Cebo 80 pF VEBO
=0.5V, f =1MHz
Noise Figure N 2 10 dB IC
= 0.2mA, VCE = 5V
RG
=1k
Switching times:
Turn-On Time
Turn-Off Time
ton
toff
100
400
ns
ns
IC
=150mA
IB1=- IB2 =15mA
RL=150
Spice parameter data is available upon request for this device
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%
C
B
E
SOT23
BCW65
BCW66
3 - 28 3 - 27
SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 - AUGUST 1995
PARTMARKING DETAILS
BCW65A  EA BCW65AR 4V
BCW65B  EB BCW65BR  5V
BCW65C  EC BCW65CR  6V
BCW66F  EF BCW66FR  7P
BCW66G  EG BCW66GR  5T
BCW66H  EH BCW66HR 7M
COMPLEMENTARY TYPES
BCW65 BCW67
BCW66 BCW68
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL BCW65 BCW66 UNIT
Collector-Base Voltage VCBO 60 75 V
Collector-Emitter Voltage VCEO 32 45 V
Emitter-Base Voltage VEBO 5V
Continuous Collector Current IC800 mA
Peak Collector Current(10ms) ICM 1000 mA
Base Current IB100 mA
Power Dissipation at Tamb
=25°C Ptot 330 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
BCW65
BCW66
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Emitter
Breakdown Voltage
BCW65
BCW66
V(BR)CEO 32
45
VI
CEO
=10mA
ICEO
=10mA
BCW65
BCW66
V(BR)CES 60
75
VIC=10µA
IC
=10µA
Emitter-Base Breakdown Voltage V(BR)EBO 5V
IEBO
=10µA
Collector-Emitter
Cut-off Current
BCW65
BCW66
ICES 20
20
20
20
nA
µA
nA
µA
VCES
= 32V
VCES
= 32V ,Tamb
=150o
C
VCES
= 45V
VCES
= 45V ,Tamb
=150o
C
Emitter-Base Cut-Off Current IEBO 20 nA VEBO
=4V
Collector-Emitter Saturation Voltage VCE(sat) 0.3
0.7
V
V
IC
=100mA, IB
= 10mA
IC
= 500mA, IB
=50mA*
Base-Emitter Saturation Voltage VBE(SAT) 2 V I
C
=500mA, IB
=50mA*
Static
Forward
Current
Transfer
BCW65A
BCW66F
hFE 35
75
100
35
160 250
IC
=100µA, VCE =10V
IC
= 10mA, VCE = 1V
IC
=100mA, VCE = 1V*
IC
=500mA, VCE = 2V*
BCW65B
BCW66G
hFE 50
110
160
60
250 400
IC
=100µA, VCE =10V
IC
= 10mA, VCE = 1V
IC
=100mA, VCE = 1V*
IC
=500mA, VCE = 2V*
BCW65C
BCW66H
hFE 80
180
250
100
350 630
IC
=100µA, VCE =10V
IC
= 10mA, VCE = 1V
IC
=100mA, VCE = 1V*
IC
=500mA, VCE = 2V*
Transition Frequency fT100 MHz IC
=20mA, VCE =10V
f = 100MHz
Collector-Base Capacitance Ccbo 8 12pFV
CBO =10V, f =1MHz
Emitter-Base Capacitance Cebo 80 pF VEBO
=0.5V, f =1MHz
Noise Figure N 2 10 dB IC
= 0.2mA, VCE = 5V
RG
=1k
Switching times:
Turn-On Time
Turn-Off Time
ton
toff
100
400
ns
ns
IC
=150mA
IB1=- IB2 =15mA
RL=150
Spice parameter data is available upon request for this device
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%
C
B
E
SOT23
BCW65
BCW66
3 - 28 3 - 27