PMCM6501VNE
12 V, N-channel Trench MOSFET
26 August 2015 Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level
Chip-Size Package (WLCSP) using Trench MOSFET technology.
2. Features and benefits
•Low threshold voltage
•Ultra small package: 0.98 × 1.48 × 0.35 mm
•Trench MOSFET technology
•ElectroStatic Discharge (ESD) protection > 2 kV HBM
3. Applications
•Relay driver
•High-speed line driver
•Low-side loadswitch
•Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage - - 12 V
VGS gate-source voltage
Tj = 25 °C
-8 - 8 V
IDdrain current VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - - 9.6 A
Static characteristics
RDSon drain-source on-state
resistance
VGS = 4.5 V; ID = 3 A; Tj = 25 °C - 15 18 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
© Nexperia B.V. 2017. All rights reserved
Nexperia PMCM6501VNE
12 V, N-channel Trench MOSFET
PMCM6501VNE All information provided in this document is subject to legal disclaimers.
Product data sheet 26 August 2015 2 / 15
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
A1 G gate
A2 S source
B1 S source
B2 S source
C1 D drain
C2 D drain
Transparent top view
A
1 2
B
C
WLCSP6 (OL-
PMCM6501VNE)
017aaa255
G
D
S
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PMCM6501VNE WLCSP6 WLCSP6: wafer level chip-size package; 6 bumps (3 x
2)
OL-PMCM6501VNE
7. Marking
Table 4. Marking codes
Type number Marking code
PMCM6501VNE AC
PIN A1
INDICATION
Top view, balls down
MARKING CODE
(EXAMPLE)
aaa-013901
A B C
2
1
Fig. 1. WLCSP6 marking code description
© Nexperia B.V. 2017. All rights reserved
Nexperia PMCM6501VNE
12 V, N-channel Trench MOSFET
PMCM6501VNE All information provided in this document is subject to legal disclaimers.
Product data sheet 26 August 2015 3 / 15
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 12 V
VGS gate-source voltage
Tj = 25 °C
-8 8 V
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - 9.6 A
VGS = 4.5 V; Tamb = 25 °C [1] - 7.3 A
IDdrain current
VGS = 4.5 V; Tamb = 100 °C [1] - 4.6 A
IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - 29 A
[2] - 556 mWTamb = 25 °C
[1] - 1300 mW
Ptot total power dissipation
Tsp = 25 °C - 12500 mW
Tjjunction temperature -55 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
Source-drain diode
ISsource current Tamb = 25 °C [1] - 1.2 A
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
[2] Device mounted on an FR4 Printed Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
© Nexperia B.V. 2017. All rights reserved
Nexperia PMCM6501VNE
12 V, N-channel Trench MOSFET
PMCM6501VNE All information provided in this document is subject to legal disclaimers.
Product data sheet 26 August 2015 4 / 15
Tj(°C)
- 75 17512525 75- 25
017aaa123
40
80
120
Pder
(%)
0
Fig. 2. Normalized total power dissipation as a
function of junction temperature
Tj(°C)
- 75 17512525 75- 25
017aaa124
40
80
120
Ider
(%)
0
Fig. 3. Normalized continuous drain current as a
function of junction temperature
aaa-016024
1
10-1
10
102
ID
(A)
10-2
VDS (V)
10-1 102
101
Limit RDSon = VDS/ID
DC; Tsp = 25 °C
DC; Tamb = 25 °C;
drain mounting pad 6 cm2
tp = 10 µs
tp = 100 µs
tp = 1 ms
tp = 10 ms
tp = 100 ms
IDM = single pulse
Fig. 4. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
[1] - 180 225 K/W
[2] - 65 85 K/W
in free air
[3] - 75 95 K/W
Rth(j-a) thermal resistance
from junction to
ambient
in free air; t ≤ 5 s [3] - 45 55 K/W
© Nexperia B.V. 2017. All rights reserved
Nexperia PMCM6501VNE
12 V, N-channel Trench MOSFET
PMCM6501VNE All information provided in this document is subject to legal disclaimers.
Product data sheet 26 August 2015 5 / 15
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-sp) thermal resistance
from junction to solder
point
- 5 10 K/W
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain, 4-layer, 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
aaa-013880
tp (s)
10-3 102103
10110-2 10-1
102
10
103
Zth(j-a)
(K/W)
1
duty cycle = 1
0.75
0.50
0.01
0.20
0.10
0.05
0.02
0
0.25
0.33
FR4 PCB, standard footprint
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-013881
tp (s)
10-3 102103
10110-2 10-1
10
102
Zth(j-a)
(K/W)
1
duty cycle = 1
0.01
0.75
0.50
0.33 0.25
0.20
0.10
0.05
0.02
0
FR4 PCB, mounting pad for drain 6 cm2
Fig. 6. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
© Nexperia B.V. 2017. All rights reserved
Nexperia PMCM6501VNE
12 V, N-channel Trench MOSFET
PMCM6501VNE All information provided in this document is subject to legal disclaimers.
Product data sheet 26 August 2015 6 / 15
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C 12 - - V
VGSth gate-source threshold
voltage
ID = 250 µA; VDS = VGS; Tj = 25 °C 0.4 0.6 0.9 V
IDSS drain leakage current VDS = 12 V; VGS = 0 V; Tj = 25 °C - - 1 µA
VGS = 8 V; VDS = 0 V; Tj = 25 °C - - 10 µA
VGS = -8 V; VDS = 0 V; Tj = 25 °C - - -10 µA
VGS = 4.5 V; VDS = 0 V; Tj = 25 °C - - 1 µA
VGS = -4.5 V; VDS = 0 V; Tj = 25 °C - - -1 µA
VGS = 2.5 V; VDS = 0 V; Tj = 25 °C - - 200 nA
IGSS gate leakage current
VGS = -2.5 V; VDS = 0 V; Tj = 25 °C - - -200 nA
VGS = 4.5 V; ID = 3 A; Tj = 25 °C - 15 18 mΩ
VGS = 4.5 V; ID = 3 A; Tj = 150 °C - 20 25 mΩ
VGS = 2.5 V; ID = 3 A; Tj = 25 °C - 18 22 mΩ
VGS = 1.8 V; ID = 2 A; Tj = 25 °C - 22 30 mΩ
RDSon drain-source on-state
resistance
VGS = 1.5 V; ID = 1 A; Tj = 25 °C - 30 45 mΩ
gfs forward
transconductance
VDS = 6 V; ID = 3 A; Tj = 25 °C - 30 - S
RGgate resistance f = 1 MHz; Tj = 25 °C - 12.7 - Ω
Dynamic characteristics
QG(tot) total gate charge - 16.1 24 nC
QGS gate-source charge - 1.1 - nC
QGD gate-drain charge
VDS = 6 V; ID = 3 A; VGS = 4.5 V;
Tj = 25 °C
- 4.7 - nC
Ciss input capacitance - 920 - pF
Coss output capacitance - 350 - pF
Crss reverse transfer
capacitance
VDS = 6 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
- 330 - pF
td(on) turn-on delay time - 10.8 - ns
trrise time - 33.5 - ns
td(off) turn-off delay time - 97.5 - ns
tffall time
VDS = 6 V; ID = 3 A; VGS = 4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C
- 73.2 - ns
© Nexperia B.V. 2017. All rights reserved
Nexperia PMCM6501VNE
12 V, N-channel Trench MOSFET
PMCM6501VNE All information provided in this document is subject to legal disclaimers.
Product data sheet 26 August 2015 7 / 15
Symbol Parameter Conditions Min Typ Max Unit
Source-drain diode
VSD source-drain voltage IS = 1.2 A; VGS = 0 V; Tj = 25 °C - 0.6 1.2 V
VDS (V)
0 431 2
aaa-019137
10
15
5
20
25
ID
(A)
0
VGS = 1.1 V
1.3 V
1.5 V
1.8 V
2.5 V
4.5 V
Tj = 25 °C
Fig. 7. Output characteristics: drain current as a
function of drain-source voltage; typical values
aaa-019138
VGS (V)
0 1.51.00.5
10-4
10-5
10-3
ID
(A)
10-6
(1) (2) (3)
Tj = 25 °C; VDS = 5 V
(1) minimum values
(2) typical values
(3) maximum values
Fig. 8. Sub-threshold drain current as a function of
gate-source voltage
ID (A)
0 252010 155
aaa-019139
20
30
10
40
50
RDSon
(mΩ)
0
VGS = 4.5 V
1.3 V
1.8 V
2.5 V
1.6 V
1.5 V
Tj = 25 °C
Fig. 9. Drain-source on-state resistance as a function
of drain current; typical values
VGS (V)
0 542 31
aaa-019140
20
30
10
40
50
RDSon
(mΩ)
0
Tj= 25 °C
Tj= 150 °C
ID = 3 A
Fig. 10. Drain-source on-state resistance as a function
of gate-source voltage; typical values
© Nexperia B.V. 2017. All rights reserved
Nexperia PMCM6501VNE
12 V, N-channel Trench MOSFET
PMCM6501VNE All information provided in this document is subject to legal disclaimers.
Product data sheet 26 August 2015 8 / 15
VGS (V)
0 2.01.50.5 1.0
aaa-019141
10
20
30
ID
(A)
0
Tj= 25 °C
Tj= 150 °C
VDS > ID × RDSon
Fig. 11. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Tj (°C)
-60 1801200 60
aaa-019142
0.5
1.0
1.5
a
0
Fig. 12. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
Tj (°C)
-60 1801200 60
aaa-019143
0.5
1.0
1.5
VGS(th)
(V)
0
(3)
(1)
(2)
ID = 0.25 mA; VDS = VGS
(1) minimum values
(2) typical values
(3) maximum values
Fig. 13. Gate-source threshold voltage as a function of
junction temperature
aaa-019144
VDS (V)
10-1 102
101
103
104
C
(pF)
102
(1)
(3)
(2)
f = 1 MHz; VGS = 0 V
(1) Ciss
(2) Coss
(3) Crss
Fig. 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
© Nexperia B.V. 2017. All rights reserved
Nexperia PMCM6501VNE
12 V, N-channel Trench MOSFET
PMCM6501VNE All information provided in this document is subject to legal disclaimers.
Product data sheet 26 August 2015 9 / 15
QG (nC)
0 20168 124
aaa-019145
2
3
1
4
5
VGS
(V)
0
ID = 3 A; VDS = 6 V; Tamb = 25 °C
Fig. 15. Gate-source voltage as a function of gate
charge; typical values
003aaa508
VGS
VGS(th)
QGS1
QGS2
QGD
VDS
QG(tot)
ID
QGS
VGS(pl)
Fig. 16. MOSFET transistor: Gate charge waveform
definitions
VSD (V)
0 1.20.80.4
aaa-019146
0.4
0.8
1.2
IS
(A)
0
Tj= 25 °C
Tj= 150 °C
VGS = 0 V
Fig. 17. Source current as a function of source-drain voltage; typical values
11. Test information
t1
t2
P
t
006aaa812
duty cycle δ =
t1
t2
Fig. 18. Duty cycle definition
© Nexperia B.V. 2017. All rights reserved
Nexperia PMCM6501VNE
12 V, N-channel Trench MOSFET
PMCM6501VNE All information provided in this document is subject to legal disclaimers.
Product data sheet 26 August 2015 10 / 15
12. Package outline
Fig. 19. Package outline WLCSP6 (OL-PMCM6501VNE)
© Nexperia B.V. 2017. All rights reserved
Nexperia PMCM6501VNE
12 V, N-channel Trench MOSFET
PMCM6501VNE All information provided in this document is subject to legal disclaimers.
Product data sheet 26 August 2015 11 / 15
13. Soldering
Footprint information for reflow soldering PMCM6501VNE
pmcm6501vne-ssmos_fr
solder resist
occupied area
solder paste = solderland
Dimensions in mm
0.5
1.7
0.5
0.15
0.35
0 .25
0.25 1.2
Fig. 20. Reflow soldering footprint for WLCSP6 (OL-PMCM6501VNE)
© Nexperia B.V. 2017. All rights reserved
Nexperia PMCM6501VNE
12 V, N-channel Trench MOSFET
PMCM6501VNE All information provided in this document is subject to legal disclaimers.
Product data sheet 26 August 2015 12 / 15
14. Revision history
Table 8. Revision history
Data sheet ID Release date Data sheet status Change notice Supersedes
PMCM6501VNE v.1 20150825 Product data sheet - -
© Nexperia B.V. 2017. All rights reserved
Nexperia PMCM6501VNE
12 V, N-channel Trench MOSFET
PMCM6501VNE All information provided in this document is subject to legal disclaimers.
Product data sheet 26 August 2015 13 / 15
15. Legal information
15.1 Data sheet status
Document
status [1][2]
Product
status [3]
Definition
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nexperia.com.
15.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
Nexperia does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local Nexperia
sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
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customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the Nexperia product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
15.3 Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, Nexperia does not give
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or completeness of such information and shall have no liability for the
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Notwithstanding any damages that customer might incur for any reason
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Right to make changes — Nexperia reserves the right to
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limitation specifications and product descriptions, at any time and without
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Quick reference data — The Quick reference data is an extract of the
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Applications — Applications that are described herein for any of these
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representation or warranty that such applications will be suitable for the
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Nexperia does not accept any liability related to any default,
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in the customer’s applications or products, or the application or use by
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and the products or of the application or use by customer’s third party
customer(s). Nexperia does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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products are sold subject to the general terms and conditions of commercial
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purchase of Nexperia products by customer.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
© Nexperia B.V. 2017. All rights reserved
Nexperia PMCM6501VNE
12 V, N-channel Trench MOSFET
PMCM6501VNE All information provided in this document is subject to legal disclaimers.
Product data sheet 26 August 2015 14 / 15
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
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Non-automotive qualified products — Unless this data sheet expressly
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Nexperia accepts no liability for inclusion and/or use of non-
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In the event that customer uses the product for design-in and use in
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of the product for such automotive applications, use and specifications, and
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Translations — A non-English (translated) version of a document is for
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between the translated and English versions.
15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
© Nexperia B.V. 2017. All rights reserved
Nexperia PMCM6501VNE
12 V, N-channel Trench MOSFET
PMCM6501VNE All information provided in this document is subject to legal disclaimers.
Product data sheet 26 August 2015 15 / 15
16. Contents
1 General description ............................................... 1
2 Features and benefits ............................................1
3 Applications ........................................................... 1
4 Quick reference data ............................................. 1
5 Pinning information ............................................... 2
6 Ordering information ............................................. 2
7 Marking ................................................................... 2
8 Limiting values .......................................................3
9 Thermal characteristics .........................................4
10 Characteristics ....................................................... 6
11 Test information ..................................................... 9
12 Package outline ................................................... 10
13 Soldering .............................................................. 11
14 Revision history ...................................................12
15 Legal information .................................................13
15.1 Data sheet status ............................................... 13
15.2 Definitions ...........................................................13
15.3 Disclaimers .........................................................13
15.4 Trademarks ........................................................ 14
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Date of release:
26 August 2015