BAS16WS-G
www.vishay.com Vishay Semiconductors
Rev. 1.1, 13-May-13 1Document Number: 85152
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Fast Switching Diode
MECHANICAL DATA
Case: SOD-323
Weight: approx. 4 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
• Silicon epitaxial planar diode
• Fast switching diode
• AEC-Q101 qualified
• Base P/N-G3 - green, commercial grade
• Material categorization: For definitions of
compliance please see
www.vishay.com/doc?99912
PARTS TABLE
PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS
BAS16WS-G BAS16WS-G3-08 or BAS16WS-G3-18 Single diode AK Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR75 V
Repetitive peak reverse voltage VRRM 100 V
Forward current (continuous) IF250 mA
Non-repetitive peak forward current
t = 1 μs IFSM 2A
t = 1 ms IFSM 1A
t = 1 s IFSM 0.5 A
Power dissipation Ptot 200 mW
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air RthJA 650 K/W
Junction temperature Tj150 °C
Storage temperature range Tstg - 65 to + 150 °C
Operating temperature range Top - 55 to + 150 °C
BAS16WS-G
www.vishay.com Vishay Semiconductors
Rev. 1.1, 13-May-13 2Document Number: 85152
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Forward Characteristics
Fig. 2 - Dynamic Forward Resistance vs. Forward Current
Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature
Fig. 4 - Relative Capacitance vs. Reverse Voltage
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
IF = 1 mA VF0.715 V
IF = 10 mA VF0.855 V
IF = 50 mA VF1V
IF = 150 mA VF1.250 V
Leakage current
VR = 25 V, TJ = 150 °C IR30 μA
VR = 75 V IR1μA
VR = 75 V, TJ = 150 °C IR50 μA
Diode capacitance VR = 0, f = 1 MHz CD2pF
Reverse recovery time IF = 10 mA, IR = 10 mA,
iR = 1 mA, RL = 100 trr 6ns
18105
I
F
(mA)
V
F
(V)
T
j
= 100 °C
T
j
= 25 °C
10- 2
10- 1
102
103
1
10
120
17438
f = 1 kHz
Tj = 25 °C
IF (mA)
Rf (Ω)
10
102
103
104
10-2 10-1 110
2
10
2
5
2
5
2
5
2
5
18185
P
tot
(mW)
T
amb
(°C)
0
100
400
500
200
300
100 2000
17440 VR (V)
0.7
0.8
0.9
1.0
1.1 f = 1 MHz
Tj = 25 °C
2086410
CD (VR)
CD (0 V)
BAS16WS-G
www.vishay.com Vishay Semiconductors
Rev. 1.1, 13-May-13 3Document Number: 85152
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Leakage Current vs. Junction Temperature
PACKAGE DIMENSIONS in millimeters (inches): SOD-323
17441 Tj (°C)
IR (nA)
10
102
103
104
100 200
2
5
2
5
2
5
2
5
V
R
= 20 V
1
0
Foot print recommendation:
Rev. 5 - Date: 23.Sept.2009
17443
Document no.:S8-V-3910.02-001 (4)
0.6 (0.024)
0.6 (0.024)0.6 (0.024)
1.6 (0.063)
0.10 (0.004)
Cathode bar
0.20 (0.008)
0.40 (0.016)
2.50 (0.098)
1.1 (0.043)
1.5 (0.059)
2.85 (0.112)
1.60 (0.063)
1.95 (0.077)
0.15 (0.006)
0.1 (0.004) max.
1.15 (0.045)
0.8 (0.031)
Created - Date: 24.August.2004
0.40 (0.016)
0.25 (0.010)
0.2 (0.008)
0° to 8°
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Revision: 02-Oct-12 1Document Number: 91000
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