BAV19W-G, BAV20W-G, BAV21W-G
www.vishay.com Vishay Semiconductors
Rev. 1.3, 13-May-13 1Document Number: 85188
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Switching Diodes, High Voltage
MECHANICAL DATA
Case: SOD-123
Weight: approx. 9.4 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
• Silicon epitaxial planar diodes
• For general purpose
• AEC-Q101 qualified
• Base P/N-G3 - green, commercial grade
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
Note
(1) Valid provided that leads are kept at ambient temperature
PARTS TABLE
PART TYPE
DIFFERENTIATION ORDERING CODE TYPE
MARKING
INTERNAL
CONSTRUCTION REMARKS
BAV19W-G VR = 100 V BAV19W-G3-08 or BAV19W-G3-18 AS Single diode Tape and reel
BAV20W-G VR = 150 V BAV20W-G3-08 or BAV20W-G3-18 AT Single diode Tape and reel
BAV21W-G VR = 200 V BAV21W-G3-08 or BAV21W-G3-18 AU Single diode Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
Continuous reverse voltage
BAV19W-G VR100 V
BAV20W-G VR150 V
BAV21W-G VR200 V
Repetitive peak reverse voltage
BAV19W-G VRRM 120 V
BAV20W-G VRRM 200 V
BAV21W-G VRRM 250 V
DC Forward current (1) IF250 mA
Rectified current (average) half
wave rectification with resist. load (1) IF(AV) 200 mA
Repetitive peak forward current (1) f 50 Hz IFRM 625 mA
Surge forward current t < 1 s IFSM 1A
Power dissipation (1) Ptot 410 mW
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air (1) RthJA 375 K/W
Junction temperature (1) Tj150 °C
Storage temperature range (1) Tstg - 65 to + 150 °C
Operating temperature range Top - 55 to + 150 °C
BAV19W-G, BAV20W-G, BAV21W-G
www.vishay.com Vishay Semiconductors
Rev. 1.3, 13-May-13 2Document Number: 85188
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Forward Current vs. Forward Voltage
Fig. 2 - Admissible Forward Current vs. Ambient Temperature
Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature
Fig. 4 - Dynamic Forward Resistance vs. Forward Current
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 100 mA VF1V
IF = 200 mA VF1250 mV
Leakage current
VR = 100 V BAV19W-G IR100 nA
VR = 100 V, Tj = 100 °C BAV19W-G IR15 μA
VR = 150 V BAV20W-G IR100 nA
VR = 150 V, Tj = 100 °C BAV20W-G IR15 μA
VR = 200 V BAV21W-G IR100 nA
VR = 200 V, Tj = 100 °C BAV21W-G IR15 μA
Dynamic forward resistance IF = 10 mA rf5
Diode capacitance VR = 0, f = 1 MHz CD1.5 pF
Reverse recovery time IF = 30 mA, IR = 30 mA,
iR = 3 mA, RL = 100 trr 50 ns
18858
1000
100
10
1
0.1
0.01
I- Forward Current (mA)
F
0 0.4 0.6 0.8 10.2
V
F
- Forward Voltage (V)
Tj = 100 °C
25 °C
0.1
0.2
0.3
0
0 30 60 90 120 150
18859 Tamb- Ambient Temperature (°C)
I , I - Admissible Forward Current (A)
OF
ICurrent (rectif.) O
DC current IF
21937
T
amb
- Ambient Temperature (°C)
P
tot
- Admissible Power Dissipation (mW)
0
100
200
300
400
500
600
0 20 40 60 80 100 120 140
r - Dynamic Forward Resistance
f(Ω)
10
100
1
1 10010
18861 IF- Forward Current (mA)
BAV19W-G, BAV20W-G, BAV21W-G
www.vishay.com Vishay Semiconductors
Rev. 1.3, 13-May-13 3Document Number: 85188
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Leakage Current vs. Junction Temperature Fig. 6 - Diodes Capacitance vs. Reverse Voltage
Fig. 7 - Non-Repetitive Peak Forward Current vs. Pulse Duration
Maximum Admissible Values of Square Pulses
0.1
18862-1
1
10
100
1000
0 40 80 120 160 200
IR(Tj)/IR (25 °C) - Leakage Current
Tj - Junction Temperature (°C)
Reverse Voltage
BAV19W-G VR = 100 V
BAV20W-G VR = 150 V
BAV21W-G VR = 200 V
21942
0.8
0.6
0.4
1.4
1.2
1.0
0.2
0
C - Diode Capacitance (pF)
D
V
R
- Reverse Voltage (V)
2.0
1.8
1.6
0 5 10 15 20 25 30 35
1
10
100
0.1
0.000001 0.00001 0.0001 0.001 0.01 0.1 1
t
p
- Test Pulse (s)
I
FSM
(A)
TJ = 25 °C - Prior to Surge
BAV19W-G, BAV20W-G, BAV21W-G
www.vishay.com Vishay Semiconductors
Rev. 1.3, 13-May-13 4Document Number: 85188
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters (inches): SOD-123
0.1 (0.004) max.
2.85 (0.112)
2.55 (0.100)
3.85 (0.152)
3.55 (0.140)
1.7 (0.067)
1.40 (0.055)
Mounting Pad Layout
2.5 (0.098)
0.85 (0.033) 0.85 (0.033)
0.85 (0.033)
Cathode bar
0.65 (0.026)
0.45 (0.018)
0.10 (0.004)
1 (0.039)
0.15 (0.006)
1.35 (0.053)
0.2 (0.008)
0° to 8°
0.45 (0.018)
0.25 (0.010)
0.5 (0.020) ref.
Rev. 4 - Date: 24. Sep. 2009
Document no.: S8-V-3910.01-001 (4)
17432
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www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
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