TCK2291xG
2017-10-18
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Toshiba Electronic Devices & Storage Corporation
TOSHIBA CMOS Linear Integrated Ci rcuit Silicon Monoli thic
TCK2291xG
2A Load Switch IC with True Reverse Current Blocking
The TCK2291xG series is Load Switch ICs for power management
with True Reverse Current Blocking and Thermal Shutdown function
featuring low switch on resistance, ultra low quiescent current, high
output current and wide input voltage operation f rom 1.1 to 5.5 V. Switch
ON resistance is only 31 mΩ at 5.0 V, -0.15 A load conditions and output
current is ava ilable on 2.0 A. A nd these feature a s l ew rate cont r ol driver
and output aut o-discharge func tion.
This device is available in 0.4 mm pitch ultra small package WCSP6E
(0.8 mm x 1.2 mm, t: 0.55 mm).Thus this devices is ideal for portable
applications that require high-density board assembly such as cellular
phone.
Feature
True Reverse Current Blocking
Thermal Shutdown function
Output auto-discharge ( Option)
Under voltage lockout
Low ON resist ance :
RON = 31 mΩ (typ.) at VIN = 5.0 V, IOUT = -0.15 A
RON = 40 mΩ (typ.) at VIN = 3.3 V, IOUT = -0.15 A
RON = 70 mΩ (typ.) at VIN = 1.8 V, IOUT = -0.15 A
RON = 141 mΩ (typ.) at VIN = 1.2 V, IOUT = -0.15 A
Low Quiescent Current: IQ = 11 μA (typ.) at IOUT = 0 m A
Low standby c urrent: IQ(OFF) = 0.6 μA (typ.) at OFF state
Inrush curre nt reduction circuitt
Pull down connection between Control a nd GND(Option)
Ultra small package : WCSP6E (0.8 mm x 1.2 mm, t: 0.55 mm)
WCSP6E
Weight: 1 mg (typ.)
Start of commercial produ cti on
2016-0
6
TCK2291xG
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Function Table
Part number
Function
Device
Marking
True Reverse
current
blocking
Output
auto-discharge Under voltage
lock out Thermal shut
down Control pin
polarity
Control pin
pull down
connection
TCK22910G Built in N/A Built in Built in Active Low - 4S
TCK22911G Built in Built in Built in Built in Active Low - 3S
TCK22912G Built in N/A Built in Built in Active High Built in 2S
TCK22913G Built in Built in Built in Built in Active High Built in 1S
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Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Input voltage VIN -0.3 to 6.0 V
Control voltage VCT -0.3 to 6.0 V
Output voltage VOUT -0.3 to 6.0 V
Output current IOUT DC 2.0 A
Pulse 3.0 (Note1) A
Power dissipation PD 800 (Note 2) mW
Operating temperature range Topr −40 to 85 °C
Junction temeperature Tj 150 °C
Storage temperature Tstg −55 to 150 °C
Note : Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant
change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated
failure rate, etc).
Note1: 100 μs pul se, 2% duty cycle
Note2: Rating at mounting on a board
Glass epoxy board dimension : 40m m x 40mm (both sides of board), t=1.6mm
Metal pattern rati o : a surface approximately 50%, the reve rse side approximately 50%
Through hole : diameter 0.5m m x 28)
Operating conditions
Characteristics Symbol Condition Min Max Unit
Input voltage VIN ― 1.1 5.5 V
Output voltage VOUT ― ― VIN V
Output current IOUT 1.8 V ≤ VIN ― 2.0 A
Control High-level input voltage VIH 1.2V < VIN ≤ 5.5 V 1.0 ― V
1.1V ≤VIN ≤1.2 V 0.9 ―
Control Low-level input voltage VIL ― ― 0.4 V
Pin Assignment(Top view) Top marking
Index
VOUT
A1: VOUT
B1: VOUT
C1: GND
A2: VIN
B2: VIN
C2: Control
1
2
A B C Lot trace code
Device Marking
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Block Diagram
Operation logic table
TCK22910G
TCK22911G
TCK22912G
TCK22913G
Control
“High”
1
OFF
OFF
ON
ON
―
ON
―
OFF
current
Active Active Active Active
Control
“Low”
ON
ON
OFF
OFF
2
―
OFF
―
ON
Reverse
current
Active Active Active Active
Control
Logic
Pull
Down
V
IN V
OUT
GND
Slew Rate
Control Driver
Output
Discharge
Control
Reverse current
blocking
UVLO Thermal
Shut down
*:Option
*
*
Q1
Q2
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Electrical Characteristics
DC Characteristics (Ta = -40 to 85°C)
Characteristics Symbol Test Condition Ta = 25°C Ta = −40 to 85°C Unit
Min Typ. Max Min Max
Quiescent current ( ON state) IQ IOUT = 0 mA VIN = 1.1 V ― 9 ― ― ― μA
VIN = 5.5 V ― 11 ― ― 20 μA
Quiescent current ( OFF state) IQ(OFF) VIN = 5.5 V, VOUT = OPEN,
(Note 3) ― 0.6 ― ― 2.5 μA
Switch leakage current( OFF state) ISD(OFF)
VOUT = GND,
current through
from VIN to
VOUT.
(Note 4)
VIN = VCT = 5.5 V ― 20 ― ― 2000 nA
Reverse blocking current IRB VOUT = 5.0 V,
VIN = 0 V, RCB active ― 0.01 ― ― 2 μA
Reverse blocking voltage threshold VRB VOUT – VIN ― 35 ― ― ― mV
Reverse blocking release voltage
threshold VRBR VOUT – VIN ― -15 ― ― ― mV
Under Voltage Lock Out (UVLO)
rising threshold VUVL_RI ― ― 0.82 ― ― 1.1 V
Under Voltage Lock Out (UVLO)
falling threshold VUVL_FA ― ― 0.77 ― ― ― V
On resistance RON IOUT = -0.1 A
VIN = 5.0 V ― 31 ― ― 85
mΩ
VIN = 3.3 V ― 40 ― ― 95
VIN = 1.8 V ― 70 ― ― 140
VIN = 1.2 V ― 141 ― ― ―
VIN = 1.1 V ― 179 ― ― ―
Output discharge on resistance RSD ― (Note 5) ― 100 ― ― ― Ω
Note 3 ： Except ISD(OFF) OFF-state switch current
Note 4 ： Only app li es to the TCK22910G and TCK22912G
Note 5 ： O nly applies to the TCK22911G and TCK22913G
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AC Characteristics (Ta = 25°C)
VIN = 5.0 V, TCK22910G
Characteristics Symbol Test Condition(Figure 2) Min Typ. Max Unit
VOUT rise time tr VIN= 5.0 V , RL = 500 Ω , CL=0.1 μF, ― 1.4 ― ms
VOUT fall time tf VIN= 5.0 V , RL = 500 Ω , CL=0.1 μF, ― 120 ― μs
Turn on delay tON VIN= 5.0 V , RL = 500 Ω , CL=0.1 μF, ― 800 ― μs
Turn off delay tOFF VIN= 5.0 V , RL = 500 Ω , CL=0.1 μF, ― 5 ― μs
VIN = 5.0 V, TCK22911G
Characteristics Symbol Test Condition(Figure 2) Min Typ. Max Unit
VOUT rise time tr VIN= 5.0 V , RL = 500 Ω , CL=0.1 μF, ― 1.4 ― ms
VOUT fall time tf VIN= 5.0 V , RL = 500 Ω , CL=0.1 μF, ― 60 ― μs
Turn on delay tON VIN= 5.0 V , RL = 500 Ω , CL=0.1 μF, ― 800 ― μs
Turn off delay tOFF VIN= 5.0 V , RL = 500 Ω , CL=0.1 μF, ― 5 ― μs
VIN = 5.0 V, TCK22912G
Characteristics Symbol Test Condition(Figure 1) Min Typ. Max Unit
VOUT rise time tr VIN= 5.0 V , RL = 500 Ω , CL=0.1 μF, ― 1.4 ― ms
VOUT fall time tf VIN= 5.0 V , RL = 500 Ω , CL=0.1 μF, ― 120 ― μs
Turn on delay tON VIN= 5.0 V , RL = 500 Ω , CL=0.1 μF, ― 800 ― μs
Turn off delay tOFF VIN= 5.0 V , RL = 500 Ω , CL=0.1 μF, ― 10 ― μs
VIN = 5.0 V, TCK22913G
Characteristics Symbol Test Condition(Figure 1) Min Typ. Max Unit
VOUT rise time tr VIN= 5.0 V , RL = 500 Ω , CL=0.1 μF, ― 1.4 ― ms
VOUT fall time tf VIN= 5.0 V , RL = 500 Ω , CL=0.1 μF, ― 60 ― μs
Turn on delay tON VIN= 5.0 V , RL = 500 Ω , CL=0.1 μF, ― 800 ― μs
Turn off delay tOFF VIN= 5.0 V , RL = 500 Ω , CL=0.1 μF, ― 10 ― μs
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AC Waveform
Figure 1 tr, tf, tON, tOFF Waveform s( Act ive High)
VIH
VOUT
VCT
VOL
VOH
VIL
90%
tON
tOFF
50%
50%
10%
tr
tf
VOUT
10%
90% 90%
10%
Figure 2 tr, tf, tON, tOFF Waveforms(Active Low)
tr
tf
VOUT
10%
90% 90%
10%
VIH
VOUT
VCT
VOL
VOH
VIL
90%
tON
tOFF
50%
50%
10%
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Toshiba Electronic Devices & Storage Corporation
Application Note
1. Application circuit example (top view)
The figure below shows the recommended configuration for TCK2291xG.
1) Input and Output capacitor
An input capacitor (CIN) and an output capacitor ( COUT) are necessary for the stable operation of TCK2291xG. And it is
effective to reduce voltage overshoot or undershoot due to sharp changes in output current and also for improved stability
of the power supply. When used, place CIN and COUT more than 1.0μF as close to VIN pin to improve stability of the power
supply.
2) Control pin
The Control pi n for TCK2291xG contro ls stat e of the s witch, operat ed by t he control voltage and Schmitt tri gger. A lso,
pull down resis tance equivalent to a few MΩ is connected bet ween Control and GND, thus the load switch IC is in OFF
state even when Control pin is OPEN. (except TCK22910G and TCK22911G). A control pins for TCK22910G and
TCK22911G is Active low. Product s that Control pin i s an open connecti on, please use be sure to fix the potenti al of the
Control pin to High or Low.
2. Thermal shutdown function
This device has a built-in Thermal shutdown circuit. If the junction temperature goes beyond 170°C (Typ.), thermal
shutdown circuit operates and turns off power switch. When the junction temperature decreases lower than 150°C, the
power switch is turned on due to hysteresis. This operation is repeated as long as the junction temperature continues
increasing.
3. True reverse current blocking
This device has built-in True reverse current blocking circuit (TRCB) to block reverse current from VOUT to VIN
regardless of output MOSF ET ON/OFF condition. (Full-Time Reverse Current Protection)
4. Under-voltage Lockout
This device has a built-in Under-voltage Lockout Circuit to turn off switch if VIN drops below UVLO. This circuit has
hysteresis a nd UVLO is rele ased when VIN exceeds thres hold.
5. Instructions and directions for use
This device has a built-in several functions, but these does not assure for the suppression of uprising device operation. In
use of these pr oducts, please read through a nd understand diss ipation ide a for absolute max imum ratings f rom the above
mention or our ‘Semiconductor Reliability Handbook’. Then use these products under absolute maximum ratings in any
condition. Furthermore, Toshiba recommend insertin g failsafe s ystem i nto the design.
VOUT
GND
VIN
Control
CL RL
LOAD
CIN
COUT
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6. Power Dissipation
Power dissip ation is measured on the board condition shown below.
[The Board Condition]
Board material: Glass epo xy (FR4)
Board dimension: 40mm x 40 mm (both sides of board), t=1.6mm
Metal pattern ratio: a surface appr o ximat el y 50%, the r everse side approximately 50%
Through hole: diameter 0. 5mm x 28
Please allo w sufficient margin when d esigni ng a boar d patt ern to f it the e xpec ted po wer dis sipati on. Also tak e into c onsi deration
the ambient temperature, input voltage, output current etc and applying the appropriate derating for allowable power
dissipatio n during operat ion.
0
200
400
600
800
1000
-40 0 40 80 120
Power Dissipation PD(mW)
Ambient Temperature Ta (℃)
PD-Ta
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Package dimension
Weight: 1 mg (typ.)
Unit: mm
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Land pattern dimensions (for r ef erence only)
Unit： mm
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