DATA SH EET
Product specification
Supersedes data of 2003 Jun 13 2005 Jun 03
DISCRETE SEMICONDUCTORS
BGF802-20
CDMA800 power module
M3D737
2005 Jun 03 2
Philips Semiconductors Product specification
CDMA800 power module BGF802-20
FEATURES
•Typical CDMA IS95 performance at a supply voltage of
28 V:
– Output power = 3 W
– Gain = 30 dB
– Efficiency = 18%
– ACPR < −53 dBc at 750 kHz and BW = 30 kHz
– ACPR < −69 dBc at 1.98 MHz and BW = 30 kHz.
•Low distortion to CDMA signals
•Excellent 2-tone performance
•Low die temperature due to copper flange
•Integrated temperature compensated bias
•50 Ω input/output system
•Flat gain over frequency range.
APPLICATIONS
•Base station RF power amplifiers in the 869 to 894 MHz
frequency range
•CDMA IS95, CDMA2000, multi carrier applications
•Macrocell (driver stage) and Microcell (final stage).
DESCRIPTION
25 W LDMOS power amplifier module for base station
amplifier applications in the 869 to 894 MHz range.
PINNING - SOT365C
PIN DESCRIPTION
1 RF input
2V
S
3 RF output
Flange ground
23
1
Top view
MBL257
Fig.1 Simplified outline.
QUICK REFERENCE DATA
Typical RF performance at Tmb =25°C.
Notes
1. IS95 CDMA (Pilot, paging, sync and traffic codes 8−13).
2. ACPR 750 kHz at 30 kHz resolution bandwidth.
3. ACPR 1.98 MHz at 30 kHz resolution bandwidth.
4. ACPR 400 kHz at 30 kHz resolution bandwidth.
MODE OF OPERATION f
(MHz) VDS
(V) PL
(W) Gp
(dB) η
(%) ACPR
(dBc) EVM
(%)
CW 869 to 894 28 25 29 48 −−
IS95 CDMA(1) 869 to 894 28 3 30 18 −53(2)
−69(3) −
GSM EDGE 869 to 894 26 2.5 30 16 −65(4) 0.4
2005 Jun 03 3
Philips Semiconductors Product specification
CDMA800 power module BGF802-20
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
CHARACTERISTICS
Tmb =25°C; VS= 28 V; PL= 3.0 W; f = 869 to 894 MHz; ZS=Z
L=50Ω; unless otherwise specified.
Note
1. GPi is small signal in-band gain.
SYMBOL PARAMETER MIN. MAX. UNIT
VSDC supply voltage −30 V
PDinput drive power −100 mW
PLload power −30 W
Tstg storage temperature −40 +100 °C
Tmb operating mounting base temperature −20 +90 °C
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
IDQ quiescent current (pin 2) PD= 0 mW 245 280 320 mA
P1dB load power at 1 dB gain compression 18 25 −W
Gppower gain 28 30 32 dB
∆Gp freq gain flatness over
frequency range −0.2 1 dB
∆Gp pwr gain flatness over power
band PL= 30 mW up to 3 W −0.8 −0.2 0.2 dB
∆ϕfreq phase linearity over
frequency range −0.2 −deg
delay flatness −200 −ps
GOB out of band gain small signal, PD= 0 dBm;
894 MHz < f < 869 MHz −−GPimax +1
note 1 dB
VSWRin input VSWR −1.6:1 2:1
H2second harmonic −−37 −34 dBc
H3third harmonic −−61 −58 dBc
stability VSWR ≤3 : 1 through all
phases; VS2 =25to28V all spurious outputs more than 60 dB
below desired signal
ruggedness VSWR = 10 : 1 through all
phases; PL=5W no degradation in output power
IS95 CDMA (PL= 3 W average)
ηefficiency 15 18 −%
ACPR750 kHz spectral regrowth;
measured in 30 kHz RBW −−53 −49 dBc
ACPR1.98 MHz −−69 −66 dBc
2005 Jun 03 4
Philips Semiconductors Product specification
CDMA800 power module BGF802-20
handbook, halfpage
024 8
30.4
30
29.2
28.8
29.6
40
30
10
0
20
6
MBL762
Gp
(dB) Gp
η
η
(%)
PL (AV) (W)
Fig.2 IS95 power gain and efficiency as functions
of load power; typical values.
f = 882 MHz.
handbook, halfpage
024 8
PL (AV) (W)
−40
−65
−45
6
−50
−55
−60
MBL763
ACPR750 kHz
(dBc)
Fig.3 ACPR at 750 kHz as a function of output
power; typical values.
f = 882 MHz.
handbook, halfpage
024 8
−60
−64
−72
−76
−68
6
MBL764
PL (AV) (W)
ACPR1.98 MHz
(dBc)
Fig.4 ACPR at 1.98 MHz as a function of output
power; typical values.
f = 882 MHz.
handbook, halfpage
010203051525
30.4
28
28.8
29.6
28.4
29.2
30
60
Gp
(dB) η
(%)
PL (W)
0
20
40
10
30
50
MBL765
Gpη
Fig.5 CW power gain and efficiency as functions
of load power; typical values.
f = 882 MHz.
2005 Jun 03 5
Philips Semiconductors Product specification
CDMA800 power module BGF802-20
handbook, halfpage
048 16
30.4
30
29.2
28.8
29.6
48
36
12
0
24
12
MBL766
Gp
(dB) Gpηη
(%)
PL (AV) (W)
Fig.6 Two tone power gain and efficiency as
functions of load power; typical values.
f1= 882 MHz; f2= 883 MHz.
handbook, halfpage
048 16
−20
−70
−30
dim
(dBc)
PL (AV) (W)
12
−40
−50
−60
MBL767
d3d5
d7
Fig.7 Two tone intermodulation distortion as
function of load power; typical values.
f1= 882 MHz; f2= 883 MHz.
handbook, halfpage
−58
0PL (AV) (W)
412
−68 82610
−66
−64
−62
−60
MBL768
ACPR400 kHz
(dBc)
Fig.8 GSMEDGEACPRat400 kHzasafunction
of load power; typical values.
f = 882 MHz.
handbook, halfpage
04 12
4
EVMrms
(%)
PL (AV) (W)
3
1
0
2
82610
MBL769
Fig.9 GSM EDGE rms EVM as a function of load
power; typical values.
f = 882 MHz.
2005 Jun 03 6
Philips Semiconductors Product specification
CDMA800 power module BGF802-20
handbook, halfpage
04 12
12
0
4
8
2
6
10
EVMM
(%)
PL (AV) (W)
82610
MBL770
Fig.10 GSMEDGEpeak EVM as a function of load
power; typical values.
f = 882 MHz.
handbook, halfpage
750 850 950 1050
31
21
29
27
25
23
0
−30
−6
−12
−18
−24
MBL771
s21
(dB)
s21
s11
s11
s11
(dB)
f (MHz)
Fig.11 s-parameters as a function of frequency.
2005 Jun 03 7
Philips Semiconductors Product specification
CDMA800 power module BGF802-20
MOUNTING RECOMMENDATIONS
General
LDMOST base station modules are manufactured with the
dies directly mounted onto a copper flange. The matching
and bias circuit components are mounted on a
printed-circuit board (PCB), which is also soldered onto
thecopper flange.Thedies and thePCBare encapsulated
in a plastic cap, and pins extending from the module
provideameansofelectricalconnection.Thisconstruction
allows the module to withstand a limited amount of flexing,
although bending of the module is to be avoided as much
as possible. Mechanical stress can occur if the bottom
surface of the module and the surface of the amplifier
casing (external heatsink) are not mutually flat. This,
therefore, should be a consideration when mounting the
module in the amplifier. Another cause of mechanical
stress can arise from thermal mismatch after soldering of
the pins. Precautions should be taken during soldering,
and efforts made to ensure a good thermal contact
between the flange and the external heatsink.
External heatsink (amplifier casing)
The module should always be mounted on a heatsink with
a low thermal resistance to keep the module temperature
as low as possible. The mounting area of the heatsink
should be flat and free from burrs and loose particles. We
recommend a flatness for the mounting area of between
50 µm concave and 50 µm convex. The 50 µm concave
value is to ensure optimal thermal behaviour, while the
50 µm convex value is intended to limit mechanical stress
due to bending.
In order to ensure optimal thermal behaviour, the use of
thermal compound is recommended when mounting the
module onto the amplifier external heatsink.
The following recommended thermal compounds have a
thermal conductivity of >0.5 W/mK:
•WPS II (silicone-free) from Austerlitz-Electronics
•Comp. Trans. from KF
•340 from Dow Corning
•Trans-Heat from E. Friis-Mikkelsen.
The use of thermal pads instead of thermal compound is
not recommended as the pads may not maintain a uniform
flatness over a period of time.
Mounting
PREPARATION
Ensure that the surface finishes are free from burrs, dirt
and grease.
CAUTION
During the following procedures ESD precautions should
be taken to protect the device from electrostatic damage.
PROCEDURE
1. Applyathin, evenly spread layer of thermal compound
to the module flange bottom surface. Excessive use of
thermal compound may result in increased thermal
resistance and possible bending of the of the flange.
Too little thermal compound will result in an increase
in thermal resistance.
2. Take care that there is some space between the cap
and the PCB. Bring the module into contact with the
external heatsink casing, ensuring that there is
sufficient space for excessive thermal compound to
escape.
3. Carefully align the module with the heatsink casing
mounting holes, and secure with two 3 mm bolts and
two flat washers. Initially tighten the bolts to “finger
tight” (approximately 0.05 Nm). Using a torque
wrench, tighten each bolt in alternating steps to a final
torque of 0.4 Nm.
4. After the module is secured to the casing, the module
leads may be soldered to the PCB. The leads are for
electrical connection only, and should not be used to
support the module at any time in the assembly
process.
A soldering iron may be used up to a temperature of
250 °C for a maximum of 10 seconds. Avoid contact
between the soldering iron and the plastic cap.
Electrical connections
The main ground path of all modules is via the flange. It is
therefore important that the flange is well grounded and
that return paths are kept as short as possible. An
incorrectly grounded flange can result in a loss of output
power or in oscillation.
The RF input and output of the module are designed for
50 Ω connections.
Incoming inspection
When incoming inspection is performed, use a properly
designed test fixture to avoid excessive mechanical stress
and to ensure optimal RF performance. Philips can deliver
dedicated test fixtures on request.
2005 Jun 03 8
Philips Semiconductors Product specification
CDMA800 power module BGF802-20
APPLICATION INFORMATION
handbook, halfpage
TEMPERATURE
COMPENSATED
GATE BIAS
C1
C3
C5
R1 L1
C2
C4
+
VS50 Ω
output
50 Ω
input
MBL781
Z1Z2
Fig.12 Test circuit.
List of components (see Figs 12 and 13)
Note
1. The striplines are on a double copper-clad printed-circuit board (RO5880) with εr= 2.2 and thickness = 0.79 mm.
COMPONENT DESCRIPTION VALUE CATALOGUE
NUMBER
C1, C3 multilayer X7R ceramic chip capacitor 100 nF; 50 V
C2, C5 tantalum SMD capacitor 10 µF; 35 V
C4 electrolytic capacitor 100 µF; 35 V
L1 grade 4S2 Ferroxcube bead 4330 030 36300
R1 metal film resistor 10 Ω; 0.4 W 2322 195 13109
Z1, Z2stripline; note 1 50 Ω
2005 Jun 03 9
Philips Semiconductors Product specification
CDMA800 power module BGF802-20
handbook, full pagewidth
90
42
MBL780
C5
R1
C4
C3
C2
C1
Z2Z1
L1
output
50 Ωinput
50 Ω
DUT
Fig.13 Printed-circuit board and component layout.
Dimensions in mm.
2005 Jun 03 10
Philips Semiconductors Product specification
CDMA800 power module BGF802-20
PACKAGE OUTLINE
UNIT Qb Zc eU2
U1
UFpq
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
01-06-06
02-11-13
IEC JEDEC JEITA
mm 4.0
3.8
0.56
0.46
A
9.5
9.0 0.3
0.2
D
30.1
29.9
E
18.6
18.4 12.8
12.6
3.55
3.45 41.75
41.65
2.54
e1
20.32 3.3
3.1
L
3.7
3.3 7.75
7.55
U3
1.1
0.0
15.4
15.2
48.4
48.0 0.3 0.25
vw
0.1
y
DIMENSIONS (mm are the original dimensions)
SOT365C
0 10 20 mm
scale
Plastic rectangular single-ended flat package; flange mounted; 2 mounting holes; 3 in-line leads SOT365C
p
U2
U3
F
A
U1
U
D
q
E
L
y
Q
c
vA
A
w
M
b
Z
23
1
e1e
2005 Jun 03 11
Philips Semiconductors Product specification
CDMA800 power module BGF802-20
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
LEVEL DATA SHEET
STATUS(1) PRODUCT
STATUS(2)(3) DEFINITION
I Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
atthese oratany otherconditionsabove thosegivenin the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationor warrantythatsuchapplicationswillbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusing orsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
© Koninklijke Philips Electronics N.V. 2005 SCA76
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
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Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
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Printed in The Netherlands R02/06/pp12 Date of release: 2005 Jun 03 Document order number: 9397 750 15203
