VS-ST183SP Series
www.vishay.com Vishay Semiconductors
Revision: 22-Aug-17 1Document Number: 94369
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Inverter Grade Thyristors
(Stud Version), 195 A
FEATURES
• Center amplifying gate
• High surge current capability
• Low thermal impedance
• High speed performance
• Compression bonding
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
•Inverters
• Choppers
• Induction heating
• All types of force-commutated converters
ELECTRICAL SPECIFICATIONS
PRIMARY CHARACTERISTICS
IT(AV) 195 A
VDRM/VRRM 400 V, 800 V
VTM 1.80 V
ITSM at 50 Hz 4900 A
ITSM at 60 Hz 5130 A
IGT 200 mA
TJ-40 °C to 125 °C
TC85 °C
Package TO-93 (TO-209AB)
Circuit configuration Single SCR
TO-93 (TO-209AB)
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
IT(AV)
195 A
TC85 °C
IT(RMS) 306
A
ITSM
50 Hz 4900
60 Hz 5130
I2t50 Hz 120 kA2s
60 Hz 110
VDRM/VRRM 400 to 800 V
tq15 to 20 μs
TJ-40 to 125 °C
VOLTAGE RATINGS
TYPE NUMBER VOLTAGE
CODE
VDRM/VRRM, MAXIMUM
REPETITIVE PEAK VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
IDRM/IRRM MAXIMUM AT
TJ = TJ MAXIMUM
mA
VS-ST183S 04 400 500 40
08 800 900
VS-ST183SP Series
www.vishay.com Vishay Semiconductors
Revision: 22-Aug-17 2Document Number: 94369
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CURRENT CARRYING CAPABILITY
FREQUENCY UNITS
50 Hz 570 370 900 610 7040 5220
A
400 Hz 560 360 940 630 3200 2280
1000 Hz 500 300 925 610 1780 1200
2500 Hz 340 190 760 490 880 560
Recovery voltage Vr50 50 50 V
Voltage before turn-on VdVDRM VDRM VDRM
Rise of on-state current dI/dt 50 - - A/μs
Case temperature 608560856085°C
Equivalent values for RC circuit 47/0.22 47/0.22 47/0.22 /μF
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at case temperature IT(AV) 180° conduction, half sine wave 195 A
85 °C
Maximum RMS on-state current IT(RMS) DC at 74 °C case temperature 306
A
Maximum peak, one half cycle,
non-repetitive surge current ITSM
t = 10 ms No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
4900
t = 8.3 ms 5130
t = 10 ms 100 % VRRM
reapplied
4120
t = 8.3 ms 4310
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
120
kA2s
t = 8.3 ms 110
t = 10 ms 100 % VRRM
reapplied
85
t = 8.3 ms 78
Maximum I2t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 1200 kA2s
Maximum peak on-state voltage VTM ITM = 600 A, TJ = TJ maximum, tp = 10 ms sine wave pulse 1.80
VLow level value of threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 1.40
High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 1.45
Low level value of forward slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.67
m
High level value of forward slope
resistance rt2 (I > x IT(AV)), TJ = TJ maximum 0.58
Maximum holding current IHTJ = 25 °C, IT > 30 A 600 mA
Typical latching current ILTJ = 25 °C, VA = 12 V, Ra = 6 , IG = 1 A 1000
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of
rise of turned-on current dI/dt TJ = TJ maximum, VDRM = Rated VDRM
ITM = 2 x dI/dt 1000 A/μs
Typical delay time tdTJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 μs
Resistive load, gate pulse: 10 V, 5 source 1.1
μs
Maximum turn-off time
minimum
tq
TJ = TJ maximum,
ITM = 300 A, commutating dI/dt = 20 A/μs
VR = 50 V, tp = 500 μs, dV/dt: 200 V/μs
15
maximum 20
180° el
ITM
180° el
ITM
100 µs
ITM
VS-ST183SP Series
www.vishay.com Vishay Semiconductors
Revision: 22-Aug-17 3Document Number: 94369
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum, linear to 80 % VDRM,
higher value available on request 500 V/μs
Maximum peak reverse and off-state leakage current IRRM,
IDRM TJ = TJ maximum, rated VDRM/VRRM applied 40 mA
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power PGM TJ = TJ maximum, f = 50 Hz, d% = 50 60 W
Maximum average gate power PG(AV) 10
Maximum peak positive gate current IGM
TJ = TJ maximum, tp 5 ms
10 A
Maximum peak positive gate voltage + VGM 20 V
Maximum peak negative gate voltage - VGM 5
Maximum DC gate current required to trigger IGT TJ = TJ maximum VA = 12 V, Ra = 6 200 mA
Maximum DC gate voltage required to trigger VGT 3V
Maximum DC gate current not to trigger IGD TJ = TJ maximum, rated VDRM applied 20 mA
Maximum DC gate voltage not to trigger VGD 0.25 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction operating temperature range TJ-40 to 125 °C
Maximum storage temperature range TStg -40 to 150
Maximum thermal resistance, junction to case RthJC DC operation 0.105 K/W
Maximum thermal resistance, case to heatsink RthCS Mounting surface, smooth, flat and greased 0.04
Mounting torque, ± 10 % Non-lubricated threads 31 (275) N · m
(lbf · in)
Lubricated threads 24.5 (210)
Approximate weight 280 g
Case style See dimensions - link at the end of datasheet TO-93 (TO-209AB)
RthJC CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR
CONDUCTION TEST CONDITIONS UNITS
180° 0.016 0.012
TJ = TJ maximum K/W
120° 0.019 0.020
90° 0.025 0.027
60° 0.036 0.037
30° 0.060 0.060
VS-ST183SP Series
www.vishay.com Vishay Semiconductors
Revision: 22-Aug-17 4Document Number: 94369
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
0
Maximum Allowable
Case Temperature (°C)
Average On-State Current (A)
40 80 120 160
80
90
100
110
120
130
20 60 100 140 180 200
ST183S Series
RthJC (DC) = 0.105 K/W
Ø
Conduction angle
30 °C
60 °C
90 °C 180 °C
120 °C
0250 300 350
Average On-State Current (A)
50 150
100 200
Maximum Allowable
Case Temperature (°C)
70
80
90
100
110
120
130
ST183S Series
RthJC (DC) = 0.105 K/W
Ø
Conduction period
30°
60°
90°
120°
180°
DC
Average On-State Current (A)
Maximum Average On-State
Power Loss (W)
0
50
100
150
200
250
300
350
0100 120 140 160 180 200
20 6040 80
RMS limit
180°
120°
90°
60°
30°
Ø
Conduction angle
ST183S Series
TJ = 125 °C
Maximum Allowable Ambient Temperature (°C)
Maximum Average On-State
Power Loss (W)
0
50
100
150
200
250
300
350
25 125
50 10075
R
thSA
= 0.08 K/W - ΔR
0.1 K/W
0.16 K/W
0.2 K/W
0.3 K/W
0.4 K/W
0.8 K/W
1.2 K/W
0.5 K/W
Average On-State Current (A)
Maximum Average
On-State Power Loss (W)
0250 300 350
50 150
100 200
0
50
100
150
200
250
300
350
400
450
500 DC
180°
120°
90°
60°
30°
RMS limit
ST183S Series
TJ = 125 °C
Ø
Conduction period
Maximum Average On-State
Power Loss (W)
0.2 K/W
R
thSA
= 0.8 K/W - ΔR
0.3 K/W
0.4 K/W
0.5 K/W
0.8 K/W
1.2 K/W
25 50 75 100 125
Maximum Allowable Ambient Temperature (°C)
0.1 K/W
0.16 K/W
0
50
100
150
200
250
300
350
400
450
500
VS-ST183SP Series
www.vishay.com Vishay Semiconductors
Revision: 22-Aug-17 5Document Number: 94369
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 8 - Thermal Impedance ZthJC Characteristics
Fig. 9 - Reverse Recovered Charge Characteristics
Fig. 10 - Reverse Recovery Current Characteristics
2000
1 10 100
2500
3000
3500
4000
4500
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Peak Half Sine Wave
On-State Current (A)
Initial TJ = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
ST183S Series
At any rated load condition and with
rated VRRM applied following surge
0.01 0.1 1
2000
2500
3000
3500
4000
5000
Pulse Train Duration (s)
Peak Half Sine Wave
On-State Current (A)
4500
Initial TJ = 125 °C
No voltage reapplied
Rated VRRM reapplied
ST183S Series
Maximum non-repetitive surge current
versus pulse train duration. Control
of conduction may not be maintained
100
1.0 1.5 2.0 2.5 3.0 3.5 4.0
1000
10 000
Instantaneous On-State Current (A)
Instantaneous On-State Voltage (V)
ST183S Series
TJ = 25 °C
TJ = 125 °C
0.01
0.01 0.1 1 100.001
0.1
1
Square Wave Pulse Duration (s)
Z
thJC
-
Transient Thermal
Impedance (K/W)
ST183S Series
0.001
Steady state value
RthJC = 0.105 K/W
(DC operation)
0
200 406080100
50
100
150
200
250
ST183S Series
TJ = 125 °C
dI/dt - Rate of Fall of On-State Current (A/µs)
Qrr - Maximum Reverse
Recovery Charge (µC)
I
TM
= 500 A
I
TM
= 300 A
I
TM
= 200 A
I
TM
= 100 A
ITM = 50 A
0
20
40
60
80
100
120
I
rr
- Maximum Reverse Recovery
Current (A)
dI/dt - Rate of Fall of On-State Current (A/µs)
ST183S Series
TJ = 125 °C
200 40 60 80 100
ITM = 500 A
I
TM
= 100 A
I
TM
= 50 A
I
TM
= 200 A
ITM = 300 A
140
160
VS-ST183SP Series
www.vishay.com Vishay Semiconductors
Revision: 22-Aug-17 6Document Number: 94369
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 11 - Frequency Characteristics
Fig. 12 - Frequency Characteristics
Fig. 13 - Frequency Characteristics
10 100 1000 10 000
100
1000
10 000
Pulse Basewidth (µs)
Peak On-State Current (A)
400
3000
100
1000
1500
2500
5000
200
500
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
50 Hz
t
p
ST183S Series
Sinusoidal pulse
TC = 60 °C
10 100 1000 10 000
100
1000
10 000
Pulse Basewidth (µs)
Peak On-State Current (A)
t
p
ST183S Series
Sinusoidal pulse
TC = 85 °C
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
5000
3000
400 100
1000
1500
2500 200
500 50 Hz
10
10 100 1000 10 000
100
1000
10 000
Pulse Basewidth (µs)
Peak On-State Current (A)
ST183S Series
Trapezoidal pulse
TC = 60 °C
dI/dt = 50 A/µs
tp
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
400
3000 100
1000
1500
2500
5000
200
500
50 Hz
10 000
10
10 100 1000 10 000
100
1000
10 000
Pulse Basewidth (µs)
Peak On-State Current (A)
400
3000
1000
1500
2500
5000
200
500
10 000
ST183S Series
Trapezoidal pulse
TC = 85 °C
dI/dt = 50 A/µs
tp
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
100 50 Hz
10
10 100 1000 10 000
100
1000
10 000
Pulse Basewidth (µs)
Peak On-State Current (A)
ST183S Series
Trapezoidal pulse
TC = 60 °C
dI/dt = 100 A/µs
tp
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM 400
3000
100
1000
1500
2500
5000
200
500
50 Hz
10 000
10
10 100 1000 10 000
100
1000
10 000
Pulse Basewidth (µs)
Peak On-State Current (A)
ST183S Series
Trapezoidal pulse
TC = 85 °C
dI/dt = 100 A/µs
tp
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
400
3000
100
1000
1500
2500
5000
200
500
50 Hz
10 000
VS-ST183SP Series
www.vishay.com Vishay Semiconductors
Revision: 22-Aug-17 7Document Number: 94369
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 14 - Maximum On-State Energy Power Loss Characteristics
Fig. 15 - Gate Characteristics
Pulse Basewidth (µs)
Peak On-State Current (A)
10 100 1000 10 000
10
100
1000
10 000
100 000
20 joules per pulse
0.5
0.3
0.2
10
tp
ST183S Series
Sinusoidal pulse
0.1
2
1
5
Pulse Basewidth (µs)
Peak On-State Current (A)
10 100 1000 10 000
10
100
1000
10 000
100 000
0.1
0.2
0.5 2
1
510
20 joules per pulse
tp
ST183S Series
Rectangular pulse
dI/dt = 50 A/µs
0.3
0.1
1
10
100
0.001
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
0.01 0.1 1 10 100
VGD
IGD
(1) (2) (3) (4)
Device: ST183S Series Frequency limited by PG(AV)
(1) PGM = 10 W, tp = 20 ms
(2) PGM = 20 W, tp = 10 ms
(3) PGM = 40 W, tp = 5 ms
(4) PGM = 60 W, tp = 3.3 ms
TJ = 40 °C
TJ = 25 °C
TJ = 125 °C
(a)
(b)
Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 10 Ω; tr ≤ 1 µs
b) Recommended load line for
≤ 30 % rated dI/dt: 10 V, 10 Ω
t
r ≤ 1 µs
VS-ST183SP Series
www.vishay.com Vishay Semiconductors
Revision: 22-Aug-17 8Document Number: 94369
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95077
- Thyristor
2
-Essential part number
3
- 3 = fast turn-off
4
-S = compression bonding stud
5
- Voltage code x 100 = VRRM (see Voltage Ratings table)
6
- P = Stud base 3/4" 16UNF-2A
7
- Reapplied dV/dt code (for tq test condition)
8
-t
q code
9
- 0 = eyelet terminals
(gate and auxiliary cathode leads)
1 = fast-on terminals
(gate and auxiliary cathode leads)
dV/dt - tq combinations available
dV/dt (V/µs) 200
15
20
FL
FK
tq (µs)
11
10
- None = standard production
- P = lead (Pb)-free
Note: For metric device M16 x 1.5 contact factory
Device code
51 32 4 6 7 8 9 10 11
STVS-183S08 P F K 0 P
1-Vishay Semiconductors product
Document Number: 95077 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 19-May-10 1
TO-209AB (TO-93)
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
Fast-on terminals
White gate
Red shrink
Red cathode
Red silicon rubber
C.S. 0.51 mm2
(0.0008 s.i.)
Ø 4.3 (0.17)
19 (0.75) MAX.
Ø 8.5 (0.33)
Glass metal seal
Ø 28.5 (1.12)
MAX.
SW 32
C.S. 35 mm2
(0.054 s.i.)
Flexible lead
3/4"-16UNF-2A
White shrink
AMP. 280000-1
REF-250
238.5 ± 10
(9.39 ± 0.39)
35 (1.38)
MAX.
21 (0.83)
MAX.
28.5 (1.12)
MAX.
16 (0.63) MAX.
75 (2.95)
MIN.
213.5 ± 10
(8.41 ± 0.39)
23 MIN.
4 MAX.
0° to 15°
38 MAX.
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
