2N4036
October 1988
MEDIUM-SPEED SWITCH
The 2N4036 is a silicon planar epitaxial PNP tran-
sistorin Jedec TO-39 metal case. It isintended par-
ticularly as medium speed saturated switch and
generalpurposeamplifier.
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCBO Collector-base Voltage (IE=0) –90 V
V
CEX Collector-emitter Voltage (VBE = 1.5 V) – 85 V
VCER Collector-emitter Voltage (RBE ≤200 Ω)–85V
V
CEO Collector-emitter Voltage (IB=0) –65 V
V
EBO Emitter-base Voltage (IC=0) –6 V
ICCollector Current – 1 A
IBBase Current – 0.5 A
Ptot Total Power Dissipation at Tamb ≤25 °C
at Tcase ≤25 °C1
7W
W
Tstg,T
jStorage and Junction Temperature – 65 to 200 °C
DESCRIPTION
INTERNAL SCHEMATIC DIAGRAM
TO-39
1/5
ELECTRICAL CHARACTERISTICS (Tamb =25°C unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cutoff Current
(IE=0) VCB = – 60 V – 20 nA
ICEO Collector Cutoff Current
(IB=0) VCE = – 30 V – 0.5 µA
IEBO Emitter Cutoff Current
(IC=0) VEB =–5V –20 nA
V(BR)CBO Collector-base Breakdown
Voltage (IE=0) I
C=–100µA – 90 V
V(BR)CEX* Collector-emitter Breakdown
Voltage (VBE = 1.5 V) IC=–10mA –85 V
V(BR)CER* Collector-emitter Breakdown
Voltage (RBE =200Ω)I
C=–10mA –85 V
V(BR)CEO* Collector-emitter Breakdown
Voltage (IB=0) I
C=–10mA –65 V
V(BR)EBO Emitter-base Breakdown Voltage
(IC=0) IE=–100µA–7V
V
CE(sat)* Collector-emitter Saturation
Voltage IC=–150mA IB= – 15 mA – 0.65 V
VBE* Base-emitter Voltage IC=–150mA VCE = – 10 V – 1.1 V
hFE* DC Current Gain IC= – 0.1 mA
IC=–150mA
IC=–500mA
VCE =–10V
VCE =–10V
VCE =–10V
20
40
20 140
fTTransition Frequency IC=–50mA
f = 20 MHz VCE =–10V 60 MHz
CEBO Emitter-base Capacitance IC=0
f=1MHz V
EB = – 0.5 V 90 pF
CCBO Collector-base Capacitance IE=0
f=1MHz V
CB =–10V 30 pF
ton** Turn-on Time IC=–150mA
IB1 =–15mA VCC = – 30V 110 ns
toff** Turn-off Time IC=–150mA
IB1 =–IB2 =– V
CC =–30V
15 mA 700 ns
* Pulsed : pulse duration = 300 µs, duty cycle = 1 %.
** See test circuit.
THERMAL DATA
Rth j-case
Rth j-amb Thermal Resistance Junction-case
Thermal Resistance Junction-ambient Max
Max 25
175 °C/W
°C/W
2N4036
2/5
Test Circuitfor ton,t
off.
2N4036
3/5
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 12.7 0.500
B 0.49 0.019
D 6.6 0.260
E 8.5 0.334
F 9.4 0.370
G 5.08 0.200
H 1.2 0.047
I 0.9 0.035
L45
o
(typ.)
L
G
I
DA
F
E
B
H
TO39 MECHANICAL DATA
P008B
2N4036
4/5
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information norfor any infringementof patents or other rights of third partieswhich may results from its use. No
license is granted by implication or otherwiseunder anypatent or patent rights of SGS-THOMSON Microelectronics.Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts arenot authorizedforuse as criticalcomponents inlife supportdevices or systems withoutexpress
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics- All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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2N4036
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