APT26M100JCU3 ISOTOP(R) Buck chopper MOSFET + SiC chopper diode Power module VDSS = 1000V RDSon = 330m typ @ Tj = 25C ID = 26A @ Tc = 25C Application * AC and DC motor control * Switched Mode Power Supplies D Features * G S * SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF A G * * * A S Power MOS 8TM MOSFET - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated ISOTOP(R) Package (SOT-227) Very low stray inductance High level of integration Benefits * Outstanding performance at high frequency operation * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * RoHS Compliant D ISOTOP(R) Absolute maximum ratings IDM VGS RDSon PD IAR Tc = 25C Tc = 80C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Tc = 25C Max ratings 1000 26 20 140 30 396 543 18 Unit V A September, 2009 ID Parameter Drain - Source Breakdown Voltage V m W A These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APT26M100JCU3 - Rev 0 Symbol VDSS APT26M100JCU3 All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Test Conditions Tj = 25C VDS =1000V VGS = 0V Tj = 125C VGS = 10V, ID = 18A VGS = VDS, ID = 2.5mA VGS = 30 V Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Min 3 Typ 330 4 Max 100 500 396 5 100 Unit Max Unit A m V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 25V f = 1MHz Qg Total gate Charge Qgs Gate - Source Charge Qgd Gate - Drain Charge VGS = 10V VBus = 500V ID = 18A Td(on) Turn-on Delay Time Tr Td(off) Tf Min Turn-off Delay Time Fall Time pF 305 nC 55 145 44 Resistive switching @ 25C VGS = 15V VBus = 667V ID = 18A RG = 2.2 Rise Time Typ 7868 825 104 40 ns 150 38 SiC chopper diode ratings and characteristics IRM Maximum Reverse Leakage Current Test Conditions VR=1200V Min 1200 Tj = 25C Tj = 175C Tc = 100C Tj = 25C Tj = 175C Typ Max 32 56 10 1.6 2.3 200 1000 IF DC Forward Current VF Diode Forward Voltage IF = 10A QC Total Capacitive Charge IF = 10A, VR = 600V di/dt =500A/s 80 C Total Capacitance f = 1MHz, VR = 200V 96 f = 1MHz, VR = 400V 69 Unit V A A 1.8 3 V nC pF Symbol Characteristic RthJC RthJA VISOL TJ,TSTG TL Torque Wt Min Junction to Case Thermal Resistance Typ Mosfet SiC Diode Junction to Ambient (IGBT & Diode) RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Storage Temperature Range Max Lead Temp for Soldering:0.063" from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight www.microsemi.com 2500 -40 Max 0.23 1.65 20 September, 2009 Thermal and package characteristics Unit C/W V 150 300 1.5 29.2 C N.m g 2-5 APT26M100JCU3 - Rev 0 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APT26M100JCU3 SOT-227 (ISOTOP(R)) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 1.95 (.077) 2.14 (.084) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) Drain Anode 30.1 (1.185) 30.3 (1.193) * Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal. 38.0 (1.496) 38.2 (1.504) Source Gate Dimensions in Millimeters and (Inches) Typical Mosfet Performance Curve 0.9 0.2 0.7 0.15 0.5 0.1 0.3 0.05 0.1 Single P ulse 0.05 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) September, 2009 0 0.00001 www.microsemi.com 3-5 APT26M100JCU3 - Rev 0 Thermal Impedance (C/W) Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration 0.25 APT26M100JCU3 Low Voltage Output Characteristics Low Voltage Output Characteristics 60 40 TJ=125C 35 ID, Drain Current (A) TJ=25C 40 TJ=125C 30 20 10 30 VGS=6, 7, 8 &9V 25 20 5V 15 10 4.5V 5 0 0 0 5 10 15 20 0 5 VDS, Drain to Source Voltage (V) 25 30 40 VGS=10V ID=18A ID, Drain Current (A) 2 1.5 1 0.5 0 VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle 30 TJ=125C 20 TJ=25C 10 0 25 50 75 100 125 150 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) TJ, Junction Temperature (C) Capacitance vs Drain to Source Voltage Gate Charge vs Gate to Source 100000 VDS=200V ID=18A TJ=25C 10 VDS=500V 8 6 VDS=800V 4 2 C, Capacitance (pF) 12 Ciss 10000 1000 Coss 100 Crss 10 1 0 0 40 80 120 160 200 240 280 320 0 50 100 150 200 VDS, Drain to Source Voltage (V) Gate Charge (nC) www.microsemi.com September, 2009 RDSon, Drain to Source ON resistance 20 Transfert Characteristics Normalized RDSon vs. Temperature VGS, Gate to Source Voltage 15 VDS, Drain to Source Voltage (V) 3 2.5 10 4-5 APT26M100JCU3 - Rev 0 ID, Drain Current (A) VGS=10V 50 APT26M100JCU3 Typical SiC Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (C/W) 1.8 0.9 1.6 1.4 0.7 1.2 1 0.5 0.8 0.3 0.6 0.4 0.1 0.2 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Reverse Characteristics Forward Characteristics 20 100 IR Reverse Current (A) IF Forward Current (A) TJ=25C 16 TJ=75C 12 TJ=125C 8 4 TJ=175C 75 50 TJ=75C TJ=125C 25 TJ=175C TJ=25C 0 0 0.5 1 1.5 2 2.5 3 3.5 0 400 600 800 1000 1200 1400 1600 VR Reverse Voltage (V) VF Forward Voltage (V) Capacitance vs.Reverse Voltage C, Capacitance (pF) 700 600 500 400 300 200 100 0 1000 September, 2009 10 100 VR Reverse Voltage ISOTOP(R) is a registered trademark of ST Microelectronics NV Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APT26M100JCU3 - Rev 0 1