SM8S10 thru SM8S43A
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Revision: 31-Aug-16 1Document Number: 88387
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Surface Mount PAR® Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES
• Junction passivation optimized design passivated
anisotropic rectifier technology
•T
J = 175 °C capability suitable for high reliability
and automotive requirement
• Available in uni-directional polarity only
• Low leakage current
• Low forward voltage drop
• High surge capability
• Meets ISO7637-2 surge specification (varied by test
condition)
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting,
especially for automotive load dump protection application.
MECHANICAL DATA
Case: DO-218AB
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“X” denotes revision code e.g. A, B, ..., revision code only
applicable for part number with ± 5 % tolerance)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity: heatsink is anode
Note
(1) Non-repetitive current pulse derated above TA = 25 °C
PRIMARY CHARACTERISTICS
VBR 11.1 V to 52.8 V
PPPM (10 x 1000 μs) 6600 W
PPPM (10 x 10 000 μs) 5200 W
PD8 W
VWM 10 V to 43 V
IFSM 700 A
TJ max. 175 °C
Polarity Uni-directional
Package DO-218AB
DO-218AB
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER SYMBOL VALUE UNIT
Peak pulse power dissipation with 10/1000 μs waveform PPPM
6600 W
with 10/10 000 μs waveform 5200
Power dissipation on infinite heatsink at TC = 25 °C (fig. 1) PD8.0 W
Peak pulse current with 10/1000 μs waveform IPPM (1) See next table A
Peak forward surge current 8.3 ms single half sine-wave IFSM 700 A
Operating junction and storage temperature range TJ, TSTG -55 to +175 °C
SM8S10 thru SM8S43A
www.vishay.com Vishay General Semiconductor
Revision: 31-Aug-16 2Document Number: 88387
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
• For all types maximum VF = 1.8 V at IF = 100 A measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses
per minute maximum
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
DEVICE
TYPE
BREAKDOWN
VOLTAGE
VBR (V)
TEST
CURRENT
IT
(mA)
STAND-OFF
VOLTAGE
VWM
(V)
MAXIMUM
REVERSE
LEAKAGE
AT VWM
ID (μA)
MAXIMUM REVERSE
LEAKAGE
AT VWM
TJ = 175 °C
ID (μA)
MAX. PEAK
PULSE CURRENT
AT 10/1000 μs
WAVEFORM
(A)
MAXIMUM
CLAMPING
VOLTAGE
AT IPPM
VC (V)
MIN. MAX.
SM8S10 11.1 13.6 5.0 10.0 15 250 351 18.8
SM8S10A 11.1 12.3 5.0 10.0 15 250 388 17.0
SM8S11 12.2 14.9 5.0 11.0 10 150 328 20.1
SM8S11A 12.2 13.5 5.0 11.0 10 150 363 18.2
SM8S12 13.3 16.3 5.0 12.0 10 150 300 22.0
SM8S12A 13.3 14.7 5.0 12.0 10 150 332 19.9
SM8S13 14.4 17.6 5.0 13.0 10 150 277 23.8
SM8S13A 14.4 15.9 5.0 13.0 10 150 307 21.5
SM8S14 15.6 19.1 5.0 14.0 10 150 256 25.8
SM8S14A 15.6 17.2 5.0 14.0 10 150 284 23.2
SM8S15 16.7 20.4 5.0 15.0 10 150 245 26.9
SM8S15A 16.7 18.5 5.0 15.0 10 150 270 24.4
SM8S16 17.8 21.8 5.0 16.0 10 150 229 28.8
SM8S16A 17.8 19.7 5.0 16.0 10 150 254 26.0
SM8S17 18.9 23.1 5.0 17.0 10 150 216 30.5
SM8S17A 18.9 20.9 5.0 17.0 10 150 239 27.6
SM8S18 20.0 24.4 5.0 18.0 10 150 205 32.2
SM8S18A 20.0 22.1 5.0 18.0 10 150 226 29.2
SM8S20 22.2 27.1 5.0 20.0 10 150 184 35.8
SM8S20A 22.2 24.5 5.0 20.0 10 150 204 32.4
SM8S22 24.4 29.8 5.0 22.0 10 150 168 39.4
SM8S22A 24.4 26.9 5.0 22.0 10 150 186 35.5
SM8S24 26.7 32.6 5.0 24.0 10 150 153 43.0
SM8S24A 26.7 29.5 5.0 24.0 10 150 170 38.9
SM8S26 28.9 35.3 5.0 26.0 10 150 142 46.6
SM8S26A 28.9 31.9 5.0 26.0 10 150 157 42.1
SM8S28 31.1 38.0 5.0 28.0 10 150 132 50.1
SM8S28A 31.1 34.4 5.0 28.0 10 150 145 45.4
SM8S30 33.3 40.7 5.0 30.0 10 150 123 53.5
SM8S30A 33.3 36.8 5.0 30.0 10 150 136 48.4
SM8S33 36.7 44.9 5.0 33.0 10 150 112 59.0
SM8S33A 36.7 40.6 5.0 33.0 10 150 124 53.3
SM8S36 40.0 48.9 5.0 36.0 10 150 103 64.3
SM8S36A 40.0 44.2 5.0 36.0 10 150 114 58.1
SM8S40 44.4 54.3 5.0 40 10 150 92.4 71.4
SM8S40A 44.4 49.1 5.0 40 10 150 102 64.5
SM8S43 47.8 58.4 5.0 43 10 150 86 76.7
SM8S43A 47.8 52.8 5.0 43 10 150 95.1 69.4
SM8S10 thru SM8S43A
www.vishay.com Vishay General Semiconductor
Revision: 31-Aug-16 3Document Number: 88387
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Fig. 1 - Power Derating Curve
Fig. 2 - Load Dump Power Characteristics
(10 ms Exponential Waveform)
Fig. 3 - Pulse Waveform
Fig. 4 - Reverse Power Capability
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER SYMBOL VALUE UNIT
Typical thermal resistance, junction to case RJC 0.90 °C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
SM8S10AHE3/2D (1) 2.605 2D 750 13" diameter plastic tape and reel,
anode towards the sprocket hole
SM8S10AHE3_A/I (1) 2.605 I 750 13" diameter plastic tape and reel,
anode towards the sprocket hole
0
2.0
4.0
6.0
8.0
050 100 150 200
Power Dissipation (W)
Case Temperature (°C)
0
2000
1000
3000
4000
5000
6000
25 50 75 100 125 150 175
Load Dump Power (W)
Case Temperature (°C)
0
50
100
150
010 20 30 40
Input Peak Pulse Current (%)
t - Time (ms)
t
d
t
r
= 10 μs
Peak Value
I
PPM
Half Value -
I
PPM
I
PP
2
T
J
= 25 °C
Pulse Width (t
d
) is
Dened as the Point
Where the Peak Current
Decays to 50 % of I
PPM
Reverse Surge Power (W)
1000
10 000
10 100
Pulse Width (ms) - ½ I
PP
Exponential Waveform
SM8S10 thru SM8S43A
www.vishay.com Vishay General Semiconductor
Revision: 31-Aug-16 4Document Number: 88387
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Typical Transient Thermal Impedance Fig. 6 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
t - Pulse Width (s)
100
10
1
0.1
0.01
0.01 0.1 1 10 100
R
θJC
R
θJA
Transient Thermal Impedance (°C/W)
V
WM
- Reverse Stand-Off Voltage (V)
100 000
10 000
1000
10
C
J
- Junction Capacitance (pF)
403530252015 45
Measured at Stand-Off
Voltage VWM
Measured at Zero Bias
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
DO-218AB
Mounting Pad Layout
0.413 (10.5)
0.374 (9.5)
0.091 (2.3)
0.067 (1.7)
0.116 (3.0)
0.093 (2.4)
0.150 (3.8)
0.126 (3.2)
0.366 (9.3)
0.343 (8.7)
0.606 (15.4)
0.583 (14.8)
0.116 (3.0)
0.093 (2.4)
0.628 (16.0)
0.592 (15.0)
0.539 (13.7)
0.524 (13.3)
0.366 (9.3)
0.343 (8.7)
0.406 (10.3)
0.382 (9.7)
0.342 (8.7)
0.327 (8.3)
0.413 (10.5)
0.374 (9.5)
0.028 (0.7)
0.020 (0.5)
0.138 (3.5)
0.098 (2.5)
Lead 1
0.098 (2.5)
0.059 (1.5)
Lead 2/Metal Heatsink
0.197 (5.0)
0.185 (4.7)
0.016 (0.4) MIN.
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Revision: 13-Jun-16 1Document Number: 91000
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