9EL2, 9EL3 BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS JANUARY 1994 - REVISED APRIL 1998 TELECOMMUNICATION SYSTEM PRIMARY PROTECTION Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge V(BR) DEVICE MINIMUM 9EL2 V(BO) V(BO) MINIMUM MAXIMUM V V V 245 265 400 200 265 9EL3 CELL PACKAGE (SIDE VIEW) T(A) R(B) MD4XACA Rated for International Surge Wave Shapes DEVICE ITU-T K28 GR-974-CORE (10/700) (10/1000) ITSP ITSP A A 9EL2 200 150 9EL3 125 100 device symbol T SD4XAA R Gas Discharge Tube (GDT) Replacement Planar Passivated Junctions in a Protected Cell Construction Low Off-State Current Extended Service Life Soldered Copper Electrodes High Current Capability Cell Construction Short Circuits Under Excessive Current Conditions Terminals T and R correspond to the alternative line designators of A and B description These devices are primary protector components for semiconductor arrester assemblies intended to meet the generic requirements of Bellcore GR-974-CORE (November 1994) or ITU-T Recommendation K28 (03/93). To conform to the specified environmental requirements, the 9ELx must be installed in a housing which maintains a stable microclimate during these tests (e.g. FIGURE I.1/K28). The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the diverted current subsides. This 9ELx range consists of two voltage variants to meet various maximum system voltage levels. They are guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These monolithic protection devices are constructed using two nickel plated copper electrodes soldered to each side of the silicon chip. This packaging approach allows heat to be removed from both sides of the silicon, resulting in the doubling of the devices thermal capacity, enabling a power line cross current capability of 10 A rms for 1 second. One of the 9ELx's copper electrodes is specially shaped to promote a progressive shorting action (at 50/60 Hz currents greater than 60 A). The assembly must hold the 9ELx in compression, so that the cell electrodes can be forced together during overstress testing. Under excessive power line cross conditions the 9ELx will fail short circuit, providing maximum protection to the equipment. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessary include testing of all parameters. Copyright (c) 1998 Texas Instruments Limited Silicon dies designed and manufactured by Power Innovations, Bedford, UK. exclusively for Texas Instruments. 1 9EL2, 9EL3 BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS JANUARY 1994 - REVISED APRIL 1998 absolute maximum ratings, TA = 25C (unless otherwise noted) RATING SYMBOL VALUE UNIT Non-repetitive peak on-state pulse current (see Notes 1 and 2) 5/310 s (ITU-T K28, 10/700 s voltage wave shape) 10/1000 s (GR-974-CORE, 10/1000 s voltage wave shape) 9EL2 -20C to 65C 9EL3 0C to 65C 200 9EL2 -20C to 65C 150 9EL3 0C to 65C 100 9EL2 -40C to 65C 9EL3 0C to 65C 125 ITSP A Non-repetitive peak on-state current (see Note 1) full sine wave, 50/60 Hz, 1 s Junction temperature Storage temperature range 10 ITSM A rms 10 TJ -40 to +150 C Tstg -40 to +150 C NOTES: 1. The surge may be repeated after the device has returned to thermal equilibrium. 2. Most PTT's quote an unloaded voltage waveform. In operation the 9ELx essentially shorts the generator output. The resulting loaded current waveform is specified. electrical characteristics for the T and R terminals, TA = 25C (unless otherwise noted) PARAMETER V(BR) V(BO) V(BO) Breakdown Voltage Breakover voltage Impulse breakover voltage Impulse reset TEST CONDITIONS I(BR) = 20 mA, (see Note 3) dv/dt = 0.2 V/s, RSOURCE > 200 100 V/s dv/dt 1000 V/s, MIN 9EL2 -40C to 65C 245 9EL2 +15C to 25C 265 9EL3 +15C to 25C -40C to 65C TYP MAX UNIT V 400 200 0C to 65C 265 di/dt 10 A/s, 9EL2 -40C to 65C 400 9EL3 0C to 65C 350 Sources are 52.5 V O.C., 260 mA S.C. and 9EL2 -40C to 65C 20 135 V O.C., 200 mA S.C. 9EL3 0C to 65C 20 9EL2 -40C to 65C 0.5 9EL3 0C to 65C 0.5 9EL2 -40C to 65C 10 V V ms on-state current 25 A, 10/1000 s impulse VD = 50 V (see Note 4) ID Coff Off-state current Off-state capacitance VD = 200 V f = 1 MHz, Vd = 1 Vrms, VD = 0, 9EL3 15C to 25C 1 9EL2 -40C to 65C 150 9EL3 0C to 65C 150 NOTES: 3. Meets Bellcore GR-974-CORE Issue 1, November 1994 - Rated Voltage Test (4.7) 4. This device is sensitive to light. Suggest that this parameter be measured in a dark environment 2 A pF 9EL2, 9EL3 BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS JANUARY 1994 - REVISED APRIL 1998 PARAMETER MEASUREMENT INFORMATION +i Quadrant I ITSP Switching Characteristic ITSM V(BO) VD -v V(BR) I(BR) ID ID I(BR) VD +v V(BR) V(BO) ITSM Quadrant III Switching Characteristic ITSP -i PMXXAG Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR T AND R TERMINALS ALL MEASUREMENTS ARE REFERENCED TO THE R TERMINAL 3 9EL2, 9EL3 BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS JANUARY 1994 - REVISED APRIL 1998 MECHANICAL DATA cell package BUTTON CELL 9ELx 0,508 (0.020) MAX Top Electrode Sleeve 2,31 (0.091) 2,11 (0.083) Bidirectional Silicon Chip 0,178 (0.007) MAX 2xo o Bottom Electrode 1,65 (0.065) 1,27 (0.050) 4,95 (0.195) 4,45 (0.175) ALL LINEAR DIMENSIONS IN MILLIMETERS AND PARENTHETICALLY IN INCHES MDXXAVA 4 9EL2, 9EL3 BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS JANUARY 1994 - REVISED APRIL 1998 IMPORTANT NOTICE Texas Instruments (TI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. TI warrants performance of its semiconductor products and related software to the specifications applicable at the time of sale in accordance with TI's standard warranty. Testing and other quality control techniques are utilized to the extent TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements. Certain applications using semiconductor products may involve potential risks of death, personal injury, or severe property or environmental damage ("Critical Applications"). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS OR OTHER CRITICAL APPLICATIONS. Inclusion of TI products in such applications is understood to be fully at the risk of the customer. Use of TI products in such applications requires the written approval of an appropriate TI officer. Questions concerning potential risk applications should be directed to TI through a local SC sales office. In order to minimize risks associated with the customer's applications, adequate design and operating safeguards should be provided by the customer to minimize inherent or procedural hazards. TI assumes no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor does TI warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property right of TI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. Copyright (c) 1998, Texas Instruments Incorporated 5