TELECOMMUNICATION SYSTEM PRIMARY PROTECTION
9EL2, 9EL3
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
Copyright © 1998 Texas Instruments Limited
1
PRODUCTION DATA information is current as of
publication date. Products conform to specifications
per the terms of Texa s Instruments standard warr anty.
Production processing does not necessary include
testing of all parameters.
JANUARY 1994 - REVISED APRIL 1998
Silicon dies designed and manufactured
by Power Innovations, Bedford, UK.
exclusively for Texas Instruments.
●Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
●Rated for International Surge Wave Shapes
●Gas Discharge Tube (GDT) Replacement
●Planar Passivated Junctions in a Protected
DEVICE
V(BR)
MINIMUM
V
V(BO)
MINIMUM
V
V(BO)
MAXIMUM
V
9EL2 ±245 ±265 ±400
9EL3 ±200 ±265
DEVICE
ITU-T K28
(10/700) GR-974-CORE
(10/1000)
ITSP
AITSP
A
9EL2 ±200 ±150
9EL3 ±125 ±100
Cell Construction
Low Off-State Current
Extended Service Life
●Soldered Copper Electrodes
High Current Capability
Cell Construction Short Circuits Under Excessive Current Conditions
descri
p
tion
These devices are primary protector components for semiconductor arrester assemblies intended to meet the
generic requirements of Bellcore GR-974-CORE (November 1994) or ITU-T Recommendation K28 (03/93).
To conform to the specified environmental requirements, the 9ELx must be installed in a housing which
maintains a stable microclimate during these tests (e.g. FIGURE I.1/K28).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially
clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to
crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the
over voltage to be safely diver ted throu gh the device. The high c rowbar hold ing current prevents d.c. latchup
as the d iverte d c ur rent subs id es. This 9E Lx ran ge co ns is ts of two voltage varia nts to m eet various maximum
system voltage levels. They are guaranteed to voltage limit and withstand the listed international lightning
surges in both polarities.
These monolithic protection devices are constructed using two nickel plated copper electrodes soldered to
each side of the silicon chip. This packaging approach allows heat to be removed from both sides of the
silicon, resulting in the doubling of the devices thermal capacity, enabling a power line cross current capability
of 10 A rms for 1 second. One of the 9 ELx’s cop per e lectrod es is s peci ally sh aped to prom ote a p rogress ive
shor ti ng actio n (at 50/60 Hz curr ents greater than 60 A). The ass embly must hold the 9ELx in co mpression ,
so that the cell electrodes can be forced together during overstress testing. Under excessive power line cross
conditions the 9ELx will fail short circuit, providing maximum protection to the equipment.
device symbol
T
RSD4XAA
Terminals T and R correspond to the
alternative line designators of A and B
T(A)
R(B)
CELL PACKAGE
(SIDE VIEW)
MD4XACA
9EL2, 9EL3
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
2
JANUARY 1994 - REVISED APRIL 1998
absolute maximum ratin
g
s, TA = 25°C (unless otherwise noted)
RATING SYMBOL VALUE UNIT
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
ITSP A
5/310 µs (ITU-T K28, 10/700 µs voltage wave shape ) 9EL2
9EL3 -20°C to 65°C
0°C to 65°C 200
125
10/1000 µs (GR-974-CORE, 10/1000 µs voltage wave shape) 9EL2
9EL3 -20°C to 65°C
0°C to 65°C 150
100
Non-repetitive peak on-state current (see Note 1) ITSM 10
10 A rmsfull sine wave, 50/60 Hz, 1 s 9EL2
9EL3 -40°C to 65°C
0°C to 65°C
Junction temperature TJ-40 to +150 °C
Storage temperature range Tstg -40 to +150 °C
NOTE S: 1. The surge may be repeated after the device has returned to therm al equilibrium.
2. Most PTT’s quote an unloaded voltage waveform. In operation the 9ELx essentially shor ts the generator output. The resulting
loaded current wavefor m is specified.
electrical characteristics for the T and R terminals, TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V(BR) Breakdown Voltage I(BR) = ±20 mA, (see Note 3) 9EL2 -40°C to 65°C ±245 V
V(BO) Breakover voltage dv/dt = ±0.2 V/s, RSOURCE > 200 Ω
9EL2
9EL3
+15°C to 25°C
-40°C to 65°C
+15°C to 25°C
0°C to 65°C
±265
±200 ±400
±265
V
V(BO) Impulse breakover
voltage
100 V/µs ≤dv/dt ≤±1000 V/µs,
di/dt ≤10 A/µs, 9EL2
9EL3 -40°C to 65°C
0°C to 65°C ±400
±350 V
Impulse reset Sources are 52.5 V O.C., 260 mA S.C. and
135 V O. C., 200 mA S.C .
on-state current 25 A, 10/1000 µs impulse
9EL2
9EL3 -40°C to 65°C
0°C to 65°C 20
20 ms
IDOff-state current
VD= ±50 V (see Note 4)
VD= ±200 V
9EL2
9EL3
9EL2
9EL3
-40°C to 65°C
0°C to 65°C
-40°C to 65°C
15°C to 25°C
±0.5
±0.5
±10
±1
µA
Coff Off-state capacitance f=1MHz, V
d= 1 Vrms, VD= 0, 9EL2
9EL3 -40°C to 65°C
0°C to 65°C 150
150 pF
NOTES: 3. Meets Bellcore GR-974-CORE Issue 1, November 1994 - Rated Voltage Test (4.7)
4. This de vi ce is sensitive to light. Suggest that this parameter be measured in a dark environment
9EL2, 9EL3
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
3
JANUARY 1994 - REVISED APRIL 1998
PARAMETER MEASUREMENT INFORMATION
Fi
g
ure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR T AND R TERMINALS
ALL MEASUREMENTS ARE REFERENCED TO THE R TERMINAL
-v I(BR)
V(BR)
VD
ITSM
ITSP
V(BO)
ID
Qua drant I
Switching
Characteristic
+v
+i
V(BO)
I(BR)
V(BR)
VD
ID
ITSM
ITSP
-i
Quadrant III
Switching
Characteristic PMXXAG
9EL2, 9EL3
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
4
JANUARY 1994 - REVISED APRIL 1998
MECHANICAL D ATA
cell
p
acka
g
e
BUTTON CELL 9ELx
ALL LINEAR DIMENSIONS IN MILLIMETERS AND PARENTHETICALLY IN INCHES
2xø
Top Electrode
Sleeve
Bidirectional
Bottom Electrode
Silicon Chip
MDXXAVA
2,31 (0.091)
2,11 (0.083)
0, 17 8 (0. 0 07 )
MAX
0, 50 8 (0. 0 20 )
MAX
ø4,95 (0.195)
4,45 (0.175)
1,65 (0.065)
1,27 (0.050)
9EL2, 9EL3
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
5
JANUARY 1994 - REVISED APRIL 1998
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ht © 1998, Texas Instruments Incorporated