6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978)-794-1666 / (978) Fax: (978) 689-0803 Page 1 of 2
MAXIMUM RATINGS
Ratings Symbol Value Units
Collector-Emitter Voltage VCEO 40 Vdc
Collector-Base Voltage VCBO 75 Vdc
Emitter-Base Voltage VEBO 6.0 Vdc
Collector Curren t IC600 mAdc
One
Section(1) Total
Device(2)
Total Power Dissipation @ TA = +250CPT0.5 0.6 W
Operating & Storage Junction Temperature Range Top, Tstg -65 to +175 0C
1) Derate linearly 2.86 mW/0C for TA > +250C
2) Derate linearly 3.43 mW/0C for TA > +250C
ELECTRICAL CHARACTERISTICS (TA = 250C unless o therwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
IC = 10 mAdc V(BR)CEO 40 Vdc
Collecto r-Base Cutoff Current
VCB = 75 Vdc
VCB = 50 Vdc
ICBO 10
10 µAdc
ηAdc
Emitter-Base Cutoff Current
VEB = 6.0 Vdc
VEB = 4.0 Vdc IEBO 10
10 µAdc
ηAdc
TECHNICAL DATA
2N5793, 2N5794
TO- 78
2N5794U
6 PIN SURFACE
MOUNT
2N5793 JAN, JTX, JTX V
2N5794 JAN, JTX, JTX V
2N5794U JAN, JTX, JTX V
Processed per MIL-PRF-19500/495
NPN SILICON DUAL TRANSISTOR
MIL-PRF
QML
DEVICES
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978)-794-1666 / (978) Fax: (978) 689-0803 Page 2 of 2
2N5793, 2N5794, 2N5794U JAN SERIES
ELECTRICAL CHARACTERISTICS (con’ t)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS
Forward-Current Tran sfer Ratio
IC = 100 µAdc, VCE = 10 Vdc 2N5793
IC = 1.0 mAdc, VCE = 10 Vdc
IC = 10 mAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 10 Vdc
IC = 300 mAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 1.0 Vdc
IC = 100 µAdc, VCE = 10 Vdc 2N5794
IC = 1.0 mAdc, VCE = 10 Vdc
IC = 10 mAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 10 Vdc
IC = 300 mAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 1.0 Vdc
hFE
hFE
20
25
35
40
25
20
35
50
75
100
40
50
120
300
Collector-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
IC = 300 mAdc, IB = 30 mAdc VCE(sat) 0.3
0.9 Vdc
Base-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
IC = 300 mAdc, IB = 30 mAdc VBE(sat) 0.6 1.2
1.8 Vdc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio, Magnitude
IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz hfe2.0 10
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Cobo 8.0 pF
Input Capacitance
VEB = 0.5 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz Cibo 33 pF
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 30 Vdc; IC = 150 mAdc; IB1 = 15 mAdc, VBE(off) = 0.5 Vdc ton 45 ηs
Turn-Off Time
VCC = 30 Vdc; IC = 150 mAdc; IB1 = IB2 = 15 mAdc toff 310 ηs
