ON Semiconductor JFET Transistor MMBF5484LT1 N-Channel ON Semiconductor Preferred Device MAXIMUM RATINGS 3 Rating Symbol Value Unit VDG 25 Vdc VGS(r) 25 Vdc IG(f) 10 mAdc 200 2.8 mW mW/C C 1 Drain-Gate Voltage Reverse Gate-Source Voltage Forward Gate Current Continuous Device Dissipation at or Below TC = 25C Linear Derating Factor PD Storage Channel Temperature Range Tstg -65 to +150 Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W TJ, Tstg -55 to +150 C Total Device Dissipation FR-5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature CASE 318-08, STYLE 10 SOT-23 (TO-236AB) 2 SOURCE 3 GATE THERMAL CHARACTERISTICS Characteristic 2 1 DRAIN DEVICE MARKING MMBF5484LT1 = 6B ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)GSS -25 -- Vdc -- -- -1.0 -0.2 nAdc Adc VGS(off) -0.3 -3.0 Vdc IDSS 1.0 5.0 mAdc Forward Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) |Yfs| 3000 6000 mhos Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) |yos| -- 50 mhos OFF CHARACTERISTICS Gate-Source Breakdown Voltage (IG = -1.0 Adc, VDS = 0) Gate Reverse Current (VGS = -20 Vdc, VDS = 0) (VGS = -20 Vdc, VDS = 0, TA = 100C) IGSS Gate Source Cutoff Voltage (VDS = 15 Vdc, ID = 10 nAdc) ON CHARACTERISTICS Zero-Gate-Voltage Drain Current (VDS = 15 Vdc, VGS = 0) SMALL-SIGNAL CHARACTERISTICS 1. FR-5 = 1.0 0.75 0.062 in. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 November, 2001 - Rev. 2 1 Publication Order Number: MMBF5484LT1/D MMBF5484LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Min Max Unit Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Ciss -- 5.0 pF Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 10 MHz) Crss -- 1.0 pF Output Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Coss -- 2.0 pF Characteristic SMALL-SIGNAL CHARACTERISTICS (Continued) COMMON SOURCE CHARACTERISTICS 30 20 bis @ IDSS 10 7.0 5.0 3.0 gis @ IDSS 2.0 gis @ 0.25 IDSS 1.0 0.7 0.5 0.3 10 grs , REVERSE TRANSADMITTANCE (mmhos) brs , REVERSE SUSCEPTANCE (mmhos) gis, INPUT CONDUCTANCE (mmhos) bis, INPUT SUSCEPTANCE (mmhos) ADMITTANCE PARAMETERS (VDS = 15 Vdc, Tchannel = 25C) bis @ 0.25 IDSS 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 5.0 3.0 2.0 0.25 IDSS 0.3 0.2 0.1 0.07 0.05 500 700 1000 brs @ IDSS 1.0 0.7 0.5 grs @ IDSS, 0.25 IDSS 10 20 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 10 10 7.0 5.0 gfs @ IDSS gfs @ 0.25 IDSS 3.0 2.0 1.0 0.7 0.5 0.3 0.2 10 30 Figure 2. Reverse Transfer Admittance (yrs) gos, OUTPUT ADMITTANCE (mhos) bos, OUTPUT SUSCEPTANCE (mhos) gfs, FORWARD TRANSCONDUCTANCE (mmhos) |b fs|, FORWARD SUSCEPTANCE (mmhos) Figure 1. Input Admittance (yis) 20 |bfs| @ IDSS 30 50 70 100 200 300 f, FREQUENCY (MHz) bos @ IDSS and 0.25 IDSS 2.0 1.0 0.5 0.2 gos @ IDSS 0.1 0.05 |bfs| @ 0.25 IDSS 20 5.0 gos @ 0.25 IDSS 0.02 0.01 500 700 1000 10 Figure 3. Forward Transadmittance (yfs) 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 4. Output Admittance (yos) http://onsemi.com 2 MMBF5484LT1 COMMON SOURCE CHARACTERISTICS S-PARAMETERS (VDS = 15 Vdc, Tchannel = 25C, Data Points in MHz) 30 20 10 0 1.0 40 350 100 340 400 300 0.8 60 ID = IDSS 0.6 90 800 310 50 10 0 350 340 330 0.4 320 700 800 700 300 60 290 70 280 80 900 0.3 ID = IDSS, 0.25 IDSS 310 900 800 0.2 300 700 600 600 500 600 80 40 500 400 0.7 70 320 20 300 200 0.9 30 200 100 50 330 ID = 0.25 IDSS 0.1 500 290 400 300 280 0.0 200 270 90 100 260 100 260 110 250 110 250 120 240 120 240 130 230 130 230 140 220 140 220 900 150 160 170 180 190 200 210 150 160 Figure 5. S11s 30 20 10 0 350 340 330 0.6 0.5 60 900 70 80 90 100 110 120 800 700 600 500 0.4 900 800 700 600 500 0.3 100 400 400 0.3 ID = 0.25 IDSS 300 200 0.4 100 0.5 300 ID = IDSS 200 170 180 190 200 210 Figure 6. S12s 40 50 270 100 130 30 20 10 0 350 340 330 100 200 I = 0.25 IDSS D 300 1.0 400 100 200 500 300 600 400 700 0.9 500 800 600 ID = IDSS 700 900 800 900 0.8 320 40 310 50 300 60 290 70 280 80 270 90 270 260 100 260 250 110 250 240 120 240 230 130 230 220 140 220 0.7 320 310 300 290 280 0.6 0.6 140 150 160 170 180 190 200 210 150 Figure 7. S21s 160 170 180 190 Figure 8. S22s http://onsemi.com 3 200 210 MMBF5484LT1 COMMON GATE CHARACTERISTICS ADMITTANCE PARAMETERS (VDG = 15 Vdc, Tchannel = 25C) 10 7.0 5.0 grg , REVERSE TRANSADMITTANCE (mmhos) brg , REVERSE SUSCEPTANCE (mmhos) gig, INPUT CONDUCTANCE (mmhos) big, INPUT SUSCEPTANCE (mmhos) 20 gig @ IDSS 3.0 grg @ 0.25 IDSS 2.0 1.0 0.7 0.5 big @ IDSS 0.3 0.2 10 20 30 big @ 0.25 IDSS 50 70 100 200 300 f, FREQUENCY (MHz) 0.5 0.3 0.1 0.07 0.05 0.25 IDSS 0.03 0.02 0.01 0.007 0.005 500 700 1000 brg @ IDSS 0.2 gig @ IDSS, 0.25 IDSS 10 10 7.0 5.0 gfg @ IDSS 3.0 gfg @ 0.25 IDSS 2.0 1.0 0.7 0.5 bfg @ IDSS 0.3 brg @ 0.25 IDSS 0.2 0.1 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 10. Reverse Transfer Admittance (yrg) gog, OUTPUT ADMITTANCE (mmhos) bog, OUTPUT SUSCEPTANCE (mmhos) gfg , FORWARD TRANSCONDUCTANCE (mmhos) bfg , FORWARD SUSCEPTANCE (mmhos) Figure 9. Input Admittance (yig) 20 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 gog @ IDSS 0.03 0.02 0.01 500 700 1000 bog @ IDSS, 0.25 IDSS gog @ 0.25 IDSS 10 Figure 11. Forward Transfer Admittance (yfg) 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 12. Output Admittance (yog) http://onsemi.com 4 MMBF5484LT1 COMMON GATE CHARACTERISTICS S-PARAMETERS (VDS = 15 Vdc, Tchannel = 25C, Data Points in MHz) 30 20 10 0 350 340 0.7 40 100 100 200 200 0.5 300 300 60 ID = IDSS 0.4 70 400 700 400 500 310 50 300 60 290 70 280 80 600 900 270 260 100 110 250 110 120 240 120 130 230 130 220 140 170 180 190 20 10 0 350 200 100 600 ID = IDSS 700 300 290 280 0.0 270 500 600 700 800 800 260 ID = 0.25 IDSS 250 0.01 240 0.02 230 900 0.03 220 0.04 150 160 170 180 190 200 210 340 330 Figure 14. S12g 340 330 30 20 10 40 320 0 1.5 1.0 100 100 0.4 320 0.01 140 210 0.5 40 330 0.02 Figure 13. S11g 30 340 310 900 160 350 0.04 90 100 150 0 800 900 90 40 10 600 800 0.3 320 20 0.03 500 700 80 30 ID = 0.25 IDSS 0.6 50 330 350 300 200 400 320 700 600 800 0.9 ID = IDSS 500 900 310 50 300 60 290 70 280 80 270 90 270 260 100 260 110 250 110 250 120 240 120 240 130 230 130 230 140 220 140 220 50 100 0.3 60 0.2 70 80 ID = 0.25 IDSS 0.1 900 90 900 100 150 160 170 180 190 200 210 ID = IDSS, 0.25 IDSS 0.8 Figure 15. S21g 300 0.7 290 280 0.6 150 160 170 180 190 Figure 16. S22g http://onsemi.com 5 310 200 210 MMBF5484LT1 INFORMATION FOR USING THE SOT-23 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm SOT-23 SOT-23 POWER DISSIPATION SOLDERING PRECAUTIONS The power dissipation of the SOT-23 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SOT-23 package, PD can be calculated as follows: PD = The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10C. * The soldering temperature and time shall not exceed 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient shall be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. TJ(max) - TA RJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 225 milliwatts. PD = 150C - 25C 556C/W = 225 milliwatts The 556C/W for the SOT-23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT-23 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. http://onsemi.com 6 MMBF5484LT1 PACKAGE DIMENSIONS SOT-23 (TO-236AB) CASE 318-08 ISSUE AF NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. A L 3 1 V B S 2 G C D H K J STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE http://onsemi.com 7 DIM A B C D G H J K L S V INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 MMBF5484LT1 Thermal Clad is a trademark of the Bergquist Company. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. N. American Technical Support: 800-282-9855 Toll Free USA/Canada http://onsemi.com 8 MMBF5484LT1/D