~ MOSPOWER Cross Reference List HEWLETT-PACKARD . Industry BVpss 'DS(on) Siliconix BVpss 'DS(on) Part No. (Volts) (Ohms) Package Equivalent (Volts) (Ohms) HPWR-6501 450 0.85 TO-3 IRF 444 450 0.85 HPWR-6502 400 0.74 TO-3 IRF340 400 0.55 HPWR-6503 450 1.0 TO-3 IRF 444 450 0.85 HPWR-6504 400 1.0 TO-3 VN4O01A 400 1:0 HITACHI 28K132 100 1.71 TO-3 IRF 122 100 0.4 28K133 120 1:71 TO-3 IRF223 150 1.2 28K134 440 v71 TO-3 IRF223 150 1.2 28K135 160 1:71 TO-3 IRF 222 200 1.2 | 28K175 180 171 TO-3 (RF222 200 1.2 2SK176 200 1.71 TO-3 IRF222 200 1.2 28K220 160 TO-3 _ 2SK221 200 TO-3 _ 2SK259 350 3.0 TO-3 IRF323 350 25 2SK260 400 3.0 T0-3 IRF322 400 25 28/47 100 1:71 TO-3 _ 2548 120 1.71 TO-3 _ _ 2849 140 1:71 TO-3 _ 28J50 160 1.71 TO-3 _ - INTERNATIONAL RECTIFIER IRF120 100 0.30 TO-3 IRF120 _ ~ IRF121 60 0.30 TO-3 IRF121 _ IRF122 100 0.40 TO-3 IRF 122 _ _ IRF123 60 0.40 TO-3 IRF123 IRF 130 100 0.18 TO-3 IRF130 IRF131 60 0.18 TO-3 iRF131 _ _ (RF 132 100 0.25 TO-3 IRF132 _ _ IRF133 60 0.25 TO-3 IRF133 ~ IRF 140 100 0.085 TO-3 IRF140 IRF141 60 0.085 TO-3 IRF 141 IRF 142 100 0.11 TO-3 IRF 142 _ IRF 143 60 0.11 TO-3 IRF 143 _ _ IRF 150 100 0.055 TO-3 IRF 150 IRF151 60 0.055 TO-3 i{RF151 IRF152 100 0.08 TO-3 iRF152 _ {RF153 60 0.08 TO-3 IRF153 _ (RF220 200 08 TO-3 IRF220 IRF221 150 08 TO-3 IRF221 _ IRF222 200 1.2 TO-3 IRF222 _ IRF223 450 1.2 TO-3 IRF223 _ IRF230 200 0.4 TO-3 IRF230 _ IRF231 150 0.4 TO-3 IRF231 IRF232 200 0.6 TO-3 iRF232 _ IRF233 150 0.6 TO-3 IRF233 ~ _ IRF240 200 0.18 TO-3 IRF240 IRF241 150 0.18 TO-3 IRF241 _ (RF 242 200 0.22 TO-3 IRF 242 IRF243 150 0.22 TO-3 IRF243 _ IRF 250 200 0.085 TO-3 IRF250 _ IRF251 150 0.085 TO-3 IRF251 _ IRF252 200 0.120 TO-3 IRF252 _ IRF 253 150 0.120 TO-3 iRF253 IRF320 400 1.8 TO-3 IRF320 IRF321 350 18 TO-3 IRF321 ~ IRF322 400 25 TO-3 IRF322 ~ _ IRF323 350 25 TO-3 IRF323 _ IRF330 400 1.0 TO-3 IRF330 _ IRF331 350 1.0 TO-3 IRF331 _ IRF332 400 15 TO-3 IRF332 IRF333 350 15 TO-3 IRF333 _ ~ IRF340 400 0.55 TO-3 IRF340 IRF341 350 0.55 TO-3 IRF341 _ _ IRF342 400 0.80 TO-3 IRF342 IRE343 350 0.80 TO-3 IRF343 IRF350 400 0.3 TO-3 IRF350 _ ~ IRF351 350 0.3 TO-3 IRF351 _ IRF352 400 0.4 TO-3 IRF 352 IRF353 350 0.4 TO-3 IRF353 _ Siliconix 1-13 {S1] SOUSISJOY SSOLD YIMOdSOWMOSPOWER Cross. Reference List (Contd) INTERSIL (Cont'd) Industry BVpss DS(on) Siliconix BVpss DS(on) Part No. (Volts) (Ohms) Package Equivalent (Volts) (Ohms) IVN6100TNU 500 15.0 TO-39 IVN6200CND 40 0.35 TO-220 VNO401D 40 0.15 IVN6200CNE 60 0.25 TO-220 IRF533 60 0.25 IVN6200CNF 80 0.25 TO-220 VNO801D 80 0.25 IVN6200CNH 100 0.25 TO-220 VN1001D 100 0.25 IVN6200CNM 200 0.5 TO-220 IRF630 200 0.4 IVN6200GNP 250 05 TO-220 IVN6200CGNR 395 25 TO-220 VN4001D 400 1.5 IVN6200CNS 400 15 TO-220 VN4001D 400 15 IVN6200CNT 450 1.5 TO-220 VN4501D 450 15 IVN6200CNU 500 2.0 TO-220 VN5001D 500 15 IVN6200KND 40 0.25 TO-3 VNO401A 40 0.15 IVN6200KNE 60 0.25 TO-3 IRF133 60 0.25 IVN6200KNF 80 0.25 TO-3 VNO801A 80 0.25 IVN6200KNH 100 0.25 TO-3 VN1001A 100 0.25 IVN6200KNM 200 05 TO-3 IRF230 200 0.4 IVN6200KNP 250 0.5 TO-3 IVN6200KNS 400 1.5 TO-3 VN4001A 400 1.5 IVN6200KNT 450 15 TO-3 VNABO1A 450 15 IVN6200KNU 500 2.0 TO-3 VN5000A 500 15 IVN6300ANE 60 75 TO-237 VN2222LM 60 75 IVN6300ANF 80 75 10-237 IVN6300ANH 100 75 TO-237 = = IVN6300ANM 200 25.0 TO-237 VN2410M 240 10.0 IVN6300ANP 250 25.0 TO-237 VN2410M 240 10.0 IVN6300ANS 400 75.0 TO-237 ~ IVN6300ANT 450 75.0 10-237 ~ ~ IVN6300ANU 500 75.0 TO-237 IVN6300SNE 60 75 TO-52 VN1OLE 60 5.0 IVN6300SNF 80 75 TO-52 ~ IVN6300SNH 100 75 TO-52 _ IVN6300SNM 200 25.0 TO-52 _ IVN6300SNP 250 25.0 TO-52 - _ IVN6300SNS 400 75.0 TO-52 IVN6300SNT 450 75.0 TO-52 _~ _ _ IVN6300SNU 500 75.0 TO-52 _ MOTOROLA MTM1NQ5 950 10.0 TO-3 _ _ MTM1N100 1000 10.0 T0-3 MTM2N45 450 4.0 TO-3 IRF423 450 4.0 MTM2N50 500 4.0 TO-3 IRF 422 500 4.0 MTM2N85 850 8.0 10-3 me . MTM2N90 900 8.0 TO-3 = MTM3N35 350 3.3 TO-3 IRF323 350 25 MTM3N40 400 3.3 TO-3 IRF 322 400 25 MTM3N55 550 25 TO-3 MTM3N60 600 2.5 TO-3 MTM4N45 450 2.0 TO-3 VN4502A 450 2.0 MTM4N50 500 2.0 TO-3 VN5002A 500 20 MTM5N35 350 1.5 TO-3 VN3501A 350 15 MTM5N40 400 15 TO-3 VN4001A 400 15 MTM6N55 550 15 TO-3 _ = MTM6N60 600 15 TO-3 ~ MTM7N45 450 12 TO-3 IRF443 450 tA MTM7N50 500 1.2 TO-3 IRF442 500 11 MTM8N12 120 0.5 TO-3 MTM8N15 150 0.5 TO-3 ~ MTM8N18 180 0.4 TO-3 - ~ MTM8N20 200 0.4 TO-3 _ = MTM8N35 350 0.8 TO-3 IRF343 350 0.8 MTM8N40 400 08 TO-3 IRF 342 400 0.8 MTM10N08 80 0.33 TO-3 IRF 120 100 0.3 MTM10N10 100 0.33 TO-3 IRF 120 100 0.3 MTM10N12 120 0.3 TO-3 MTM10N15 150 0.3 TO-3 MTM12NO05 50 0.2 TO-3. VNOB01A 60 0.15 MTM12N06 60 0.2 TO-3 VNO601A 60 0.15 MTM12N08 80 0.25 TO-3 VNO801A 80 0.25 MTM12N10 100 0.25 TO-3 VN1001A 100 0.25 Siliconix 1-17 jSI] SOUSGIOJOY SSOID YIMOdSOWMOSPOWER Selector Guide *200C Rating MOSPOWER Selector Guide = Sse" N-Channel MOSPOWER Breakdown Ip Power Device Voltage (Bolon Continuous Dissipation Part (Volts) (Ohms (Amps) (Watts) Number 500 0.4 13.0 150 IRF450 500 0.5 12.0 150 IRF452 500 0.85 8.0 125 IRF440 500 1.10 7.0 125 IRF442 500 1.5 6.5 175 VNPO002A* 500 1.5 45 100 VN5001A 500 1.5 45 75 IRF430 500 2.0 4.0 100 VN5002A 500 2.0 4.0 75 IRF432 500 3.0 2.5 40 {RF420 500 4.0 2.0 40 IRF422 450 0.4 13.0 150 IRF461 450 0.5 12.0 150 IRF453 450 0.85 8.0 125 IRF441 450 1.10 7.0 125 IRF443 450 1.5 6.5 175 VNNOO2A* 450 1.5 45 100 VN4501A 450 1.5 45 75 IRF431 450 2.0 40 100 VN4502A 450 2.0 4.0 75 IRF433 450 3.0 2.5 40 IRF421 450 4.0 2.0 40 IRF423 400 0.3 15.0 150 IRF350 400 0.4 13.0 150 IRF352 400 0.55 10.0 125 (RF340 400 0.80 8.0 125 IRF342 400 1.0 8.0 175 VNMO01A* 400 1.0 6.0 125 VN4000A 400 1.0 5.5 76 IRF330 400 1.5 5.0 125 VN4001A 400 1.5 45 75 IRF332 e 400 1.8 3.0 40 IRF320 400 2.5 2.5 40 IRF322 eS 350 0.3 15.0 150 IRF351 350 0.4 13.0 150 IRF353 350 0.55 10.0 125 (RF341 TO-3 350 0.80 8.0 125 IRF343 350 1.0 8.0 175 VNLOO01A* 350 1.0 6.0 125 VN3500A 350 1.0 5.5 75 IRF331 350 1.5 5.0 125 VN3501A 350 1.5 45 75 IRF333 350 1.8 3.0 40 IRF321 350 2.5 2.5 40 IRF323 200 0.085 30.0 150 IRF250 200 0.12 25.0 150 IRF252 200 0.18 18.0 125 IRF240 200 0.22 16.0 125 IRF242 200 0.4 9.0 75 {RF230 200 0.6 8.0 75 IRF232 200 0.8 5.0 40 IRF220 200 1.2 4.0 40 IRF222 150 0.085 30.0 150 IRF251 150 0.12 25.0 150 IRF253 150 0.18 18.0 125 IRF241 150 0.22 16.0 125 IRF243 150 0.4 9.0 75 IRF231 150 0.6 8.0 75 IRF233 150 0.8 5.0 40 IRF221 150 1.2 4.0 40 IRF223 120 0.18 14.0 75 VN1200A 120 0.25 12.0 100 VN1201A 1-4 Siliconix400V MOSPOWER VN3500A = VN3501A = VN4000A VN4001A VN3500D # VN3501D VN4000D = VN4001D N-Channel Enhancement Mcde 5 Siliconix These power FETs are designed especially for offline switching regulators, converters, solenoid and relay drivers. FEATURES Product Summary u High Voltage Part |PRO ELECTRON BV, Rp Ip | Package = No Second Breakdown Number | PartNumber | DSS | "DS(on) | 'P . a High Input Impedance VN3500A | __ BUP6O 12 fea O38 a Internal Drain-Source Diode VN3500D 450V 70-220 a High Threshold for Noise immunity VN3501A BUP61 159 [5A 1073 = Very Rugged: Excellent SOA VN3501D TO-220 = &xtremely Fast Switching VN4000A |__BUP62 102 |6a ptO3 VN4000D 400V TO-229 VN4001A BUP63 TO-3 1.59 A --- BENEFITS VN4001D 5 TO-220 s Reduced Component Count > a improved Performance uJ a Simpler Designs ot = Improved Reliability g ABSOLUTE MAXIMUM RATINGS (Tc = 25C unless otherwise noted) Drain-Source Voltage Gate Current (Peak) ......05. 6... cc eee eee eee nee +3A VN3500A, D; VNS501A, DO... eee eee eee 350V Gate-Source Voltage ......... ccc cece e eet + 40V VNO4O0A, D; VN4001A, DD... 6. cece eee 400V Total Power Dissipation, A Suffix ............ 0000 125W Drain-Gate Voltage Linear Derating Factor .............0. eee eee 0.833WiC VN3500A, D; VN3501A, D..... eee eee 350V Total Power Dissipation, D Suffix .............00 eee eee 75W VN4O00A, D; VN4001A, Do... we cee eres 400V Linear Derating Factor .......... 0. cece eee eee O.6WIPC Drain Current Storage and Junction Temperature Continuous ASUPFIX oo cece eee 55C to +175C VN3500A, D; VN4000A, DD... cee eee +6A DSufflx oo. cee eee eee ee eee ~56C to + 150C VNS501A, D; VN4001A, D...... wee eee + 5A Pulsed? Notes: A SUFFIX. cece eet tener eens +16A 1. Limited by package dissipation. DSUffIK 0 cee eee eee + 10A 2. Pulse test 80ys to 300us, 1% duty cycle. PACKAGE DIMENSIONS 0.450 (71.43) Lae az o250 (eaa MAX 020 (0.51) PIN 1 Gate ane) MAX 085 (798) a8 sme 209 PIN2Source | 1 | _t CASE Drain TTT ot, SEATING aon os * a (e5) | PANEL 21097 1SBA087 Le $00 (12,70) PIN 1 Gate oes (17.tas) | MTT 1288881 oadist 408 wt a PIN 2 & TAB Drain Tess (16.637) , \ " (6.38) PIN 3 Source ! AE ertune oasa 171.176) Sry |? | q mas 1.09 0.420 /70.668) ea ote: 1a08e) cay ) ; ~! ~ 1 ' 8. tL No OST 73.835) | eae 18 0.208 15.207) rom view (Peas) MAX wo ese _ | je TO-204AA (TO-3) TO-220AB (A Suffix Parts) (BD Suffix Parts) 2-86 SiliconixELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted) Parameter Nonter Min | Max | Unit Test Conditions Static wnasooe | ax BVpss Drain-Source Breakdown Vv Ves=0, lp=1 mA VN4000A, D 400 VN4001A, D Vesan Gate Threshold Voltage All 3 6 Vv Ves = Vos: Ip=1 mA, lass Gate Body Leakage All 100 nA | Veg =30V, Vos = 0 Ipsgs_ Zero Gate Voltage Drain Current All ; mA Vos = Rated, Vos; Vas = 0 2.5 Vos = Rated Vos, Veg = 0, Te = 150C VN3500A, D 3 Vosion) Drain-Source Saturation Voltage SN aeOTE 5 ts Vv Ves = 10V, Ip =3A (Note 1) VN4001A, D , VN3500A, D 1 fpsiony) + Drain-Source On Resistance VIN4000A, D g Veg = 10V, Ip = 3A (Note 1) VN3501A, D 15 VN4001A, D lojon) On-State Drain Current All 8 A Vos = 25V, Vag = 10V (Note 1) Dynamic Ots Forward Transconductance Alt 25 mS | Vog= 25V, Ip= 3A (Note 1) Ciss_s Input Capacitance Alt 1000 Crss Reverse Transfer Capacitance All 40 PF | Veg=9, Vos = 25V, f= 1 MHz Coss Common-Source Output Capacitance All 220 taon) _Turn-On Delay Time All 50 t Rise Time All 50 | ag | Yoo=200V, Ip=1A, R, = 672, Ry =102 tao) Turn-Otf Delay Time All 100 (Figure 1) tr Fall Time All 80 Drain-Source Diode Characteristics Typ Vsp Forward ON Voltage All 1.2 Vv Ig =4A, Vag = 0 (Note 1) ter Reverse Recovery Time Ail 400 ns Ip =IR=4A, Veg = 0 (Figure 2) Note: Refer to VNDA40 Design Curves (See Section 4) 1. Pulse test: 80 us to 300 ws, 1% duty cycle. TEST CIRCUITS FIGURE 1 Switching Test Circuit Yin Yop ~~ 7 | Rgen = As ae | 20v ! 2 T's | |__| I | | ctReurr = E UNDER [GeNeRaToR| [TEST PW. = 1 Cg <50 pF as DUTY CYCLE = 1% IN4933 7 _ lpKyAdiust , lk ~ | < rm FIGURE 2 JEDEC Reverse Recovery Circuit A a v 502 di/at Adjust (1-27 uH) 4 * 5 TO 50uF 240Q 1N4001 4000uF Sem Pt - 4 R<0.252 L$ 0.01uH t . i WW (N4723 r 2N4204 SCOPE FROM TRIGGER CKT rn") Siliconix 2-87 | G'VLOOPNA = C'VOOOVNA = G'VIOSENA = C'VOOSENATYPICAL STATIC CHARACTERISTICS (Pulse width 80us300)s, Duty cycle 1%, Tc =25C) Part Numbers: VN3500A, VN3500D, VN3501A, VN3501D, VN4000A, VN4000D, VN4001A, VN4001D, IRF330, IRF331, Ip DRAIN CURRENT (AMPS) K, NORMALIZED ON RESISTANCE IRF 332, IRF333, IRF730, [RF731, IRF732, IRF733 Ohmic Region 20 16 Vas =20V 12 Vosisar) DRAIN SOURCE SATURATION VOLTAGE (VOLTS) 0 Qo 10 20 30 40 50 Vos DRAIN-SOURCE VOLTAGE (VOLTS) Temperature Effects on rpsjon) 2.4 a 2.0 = 2 8 1.6 Y z & 1.2 a wi LL) z 0.8 7 : 5 B 1 0.4 g 0 ~50-25 0 25 50 75 100 125 150 175 Ty JUNCTION TEMPERATURE (C) Transfer Characteristics VNDA4O Voltage Saturation Region 20 16 8A 6A 4A 2A 0 2 4 6 + 8 0 12 0 Vas Vesith GS(th) GATE ENHANCEMENT VOLTAGE (VOLTS) ON Resistance Characteristics 1:8 Ip = 10A 1.6 1.4 1.2 1.0 0.8 oO 0 2.4 6 8 10 12 Vas Vasith): GATE ENHANCEMENT VOLTAGE (VOLTS) Output Characteristics 10 BEC 20 Vos = 50V t a 25C a 8 a = 125C = 16 < = E & z 6 a 12 x ec a > > Oo z 4 Zz 8 < < a i 2 25C I 4 3 4 3 125C 3 0 2 4 6 8 0 40 120. 160 200 Vas ~ GATE SOURCE VOLTAGE (VOLTS) Vos DRAIN-SOURCE VOLTAGE (VOLTS) 01/83 Siliconix 4-5 OVVONATRANSIENT THERMAL RESISTANCE (NORMALIZED) TYPICAL CHARACTERISTICS (Cont'd) Part Numbers: VN3500A, VN3500D, VN3501A, VN3501D, VN4000A, VN4000D, VN4001A, VN4001D, IRF330, IRF331, IRF332, IRF 333, IRF730, IRF731, IRF732, IRF733 Safe Operating Area, Active Region, TO-3 Package VNDA40 Safe Operating Area, Active Region, TO-220AB Package 100 10 y oe 10 ys J = 50 [CURRENT DEPENDS a < J NounneNr. | 4 2 UPON rps(on) a DEPENDS 7 = 20 = L WN UPON rosion\ | J = 10 | VN9S008 = 2 NNR N 100 us o . a ~ \S alle VN3501A & 4b-Tc=28 NS | 1 2 = [VN4001A 3 E NAAN CH iins 4 = 10 2 ost | NS N | 1 = 1 + A-IRF331,3,731,3 NA Nio ms 4 Oo 08 a | B-IRF330, 2,730, 2 1 4 I N a 5 pc 1 g.a|_ C-IRE330, 1 730, 1 DC NJ} 100 ms = oe To = 25C gg %2)~D-RF332,3 732, 3 0.1 0.4 | 1 Lol 1 Lit 10 20 50 100 200 500 1000 10 620 50 100 200 500 1000 Vps DRAIN-SOURCE VOLTAGE (VOLTS) Vps - DRAIN SOURCE VOLTAGE (VOLTS) Power Derating Safe Operating Area, Switching 150 1.50 20 = 125 1.28 a A SUFFIX x 16 z s = 9 )} << ~ =< 100 10 Oo a Po| 5 612 a a N\ A rd oo. 21 Kp | & SUFFIX ons 2 D SUFFIX Bj a aX) Rac = 12 cw) ZO 2 12 i A 9 2 21> = 50 NOAA oso = SWITCHING LOAD 8 is 2 SeN N\ 9 5 LINES MUST LIE S > D SUFFIX | MOS 9 7 gL WITHIN THis AREA | [5 | ao 25 } {Pp SS 0.25 a VALID FOR t, AND t+ a Rajc = 1.67C/W = UNDER ONE | | 0 MICROSECOND Q 0 25 50 75 100 125 150 175 0 100 200 300 400 500 Tc CASE TEMPERATURE (C) Vps DRAIN SOURCE VOLTAGE (VOLTS) The safe operating area data of Active Region, TO-3 Package and Active Region, TO-220AB Package indicates maximum operating current Thermal Response as a function of voltage and time at Tg = 25C. At 1.0F Trim ty elevated temperatures, power must be derated E > using the derating factor, Kp from Power fe a Derating. Current limitations imposed by "psion) [ Zo | 7] are not shown except at 25C. When operating in | D SUFFIX Zz J fheonmic region, the maximum current is found = = E A SUFFIX 4 lo= (-Pg) 7 or K, Fpsion) @ 25C 4 where Pp is the power dissipation at operating + case temperature and rpgin) is the on resistance for the part. K, is the multiplying factor for on-re- 0.0 Pett ui tot vit bd tty {LU pdb i sistance at the maximum rated junction tempera- 0.01 0.1 1.0 10 100 1000 ture taken from Temperature Effects on rpgion)- TIME (mS) Since on-resistance varies somewhat with cur- rent, some iteration of Ip and rpgion) Must be done using ON Resistance Characteristics as a guide. SiliconixTYPICAL CHARACTERISTICS (Cont'd) Part Numbers: VN3500A, VN3500D, VN3501A, VN3501D, VN4000A, VN4000D, VN4001A, VN4001D, IRF330, IRF331, IRF332, IRF333, IRF730, IRF731, IRF732, IRF733 SWITCHING TIME Eftects of Load Conditions z z ul = = - - g g = = g eg 5 5 | I Vin = 10V = 100 1 2 3C4 8 10 Ip DRAIN CURRENT (AMPS) CHARGE Turn-On Charge 400 Vos = 200V 300 Sow 200 Vas GATE-SOURCE VOLTAGE (VOLTS) Vos DRAIN SOURCE VOLTAGE (VOLTS) (SLIOA) JOVLIOA ZOUNOS BLVD SPA 0 5 10 15 20 25 30 35 Q CHARGE (nC) VNDA4O Effects of Drive Resistance 1000 FT TT TTT q TTR Vin = 10V qa 500 | Vop = 200V. L Ip=3A 4 . taotfy A 200 100 |- 4 50. Z LL en | 20 tf ~ t 1 10 Lert pitiin 1 2 5 10 20 50 100 Rs -- SOURCE RESISTANCE (OHMS) Turn-Off Charge 16 400 Ry = 1000 =10V 0 5 10 15 20 25 30 @ CHARGE (nC) Switching Time Equations Qu Vos tayon) = 2 Agen In {| d(on) Vogt gen (es _ Vor Qg2o-Q Veg-V t= 9 8 Eg in VSS = *) Vg2 7 Vgi Veo 7 Vg2 OFF ON Vos 90% Vaa Voi Vga -10% ! 4 Qg1 Qg2 Qgs TURN-ON Qos Qg2 taotty = 9 Rgen In Vac ~ Vg2 Voge ~ "gt gi ON OFF vi Vea "7 ps \ Vg2 Vgi 2] T Qga Qg2 Qg: TURN-OFF 200 100 (SL10A) ADVLIOA JDUNOS-NIVEG SOA Siliconix OVVGNA