IXFP16N50P - Zilog - Datasheet.Live

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

VDSS = 500V

ID25 = 16A

RDS(on) ≤≤

≤≤

≤ 400mΩΩ

ΩΩ

Ω

trr ≤≤

≤≤

≤ 200ns

DS99357G(05/11)

IXFA16N50P

IXFP16N50P

IXFH16N50P

Symbol Test Conditions Maximum Ratings

VDSS TJ= 25°C to 150°C 500 V

VDGR TJ= 25°C to 150°C RGS = 1MΩ500 V

VGSS Continuous ± 30 V

VGSM Transient ± 40 V

ID25 TC= 25°C16A

IDM TC= 25°C, Pulse Width Limited by TJM 35 A

IATC= 25°C16A

EAS TC= 25°C 750 mJ

dV/dt IS ≤ IDM, VDD ≤ VDSS ,T

J ≤ 150°C 10 V/ns

PDTC= 25°C 300 W

TJ-55 ... +150 °C

TJM 150 °C

Tstg -55 ... +150 °C

TL1.6mm (0.062 in.) from Case for 10s 300 °C

TSOLD Plastic Body for 10 Seconds 260 °C

MdMounting Torque (TO-220 & TO-247) 1.13 / 10 Nmlb.in.

FCMounting Force (TO-263) 10..65 / 2.2..14.6 N/lb.

Weight TO-263 2.5 g

TO-220 3.0 g

TO-247 6.0 g

Symbol Test Conditions Characteristic Values

(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.

BVDSS VGS = 0V, ID = 250μA 500 V

VGS(th) VDS = VGS, ID = 2.5mA 3.0 5.5 V

IGSS VGS = ± 30V, VDS = 0V ± 100 nA

IDSS VDS = VDSS, VGS= 0V 15 μA

TJ = 125°C 250 μA

RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 400 mΩ

PolarTM HiperFETTM

Power MOSFET

Features

zInternational Standard Packages

zAvalanche Rated

zFast Intrinsic Diode

zLow Package Inductance

Advantages

zHigh Power Density

zEasy to Mount

zSpace Savings

Applications

zSwitched-Mode and Resonant-Mode

Power Supplies

zDC-DC Converters

zLaser Drivers

zAC and DC Motor Drives

zRobotics and Servo Controls

G = Gate D = Drain

S = Source Tab = Drain

TO-247 (IXFH)

G

S

DD (Tab)

TO-263 AA (IXFA)

GS

D (Tab)

GDS

TO-220AB (IXFP)

D (Tab)

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFA16N50P IXFP16N50P

IXFH16N50P

Symbol Test Conditions Characteristic Values

(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.

gfs VDS= 20V, ID = 0.5 • ID25, Note 1 9 16 S

Ciss 2480 pF

Coss VGS = 0V, VDS = 25V, f = 1MHz 237 pF

Crss 18 pF

td(on) 23 ns

tr 25 ns

td(off) 70 ns

tf 22 ns

Qg(on) 43 nC

Qgs VGS= 10V, VDS = 0.5 • VDSS , ID = 0.5 • ID25 15 nC

Qgd 12 nC

RthJC 0.42 °C/W

RthCH TO-220 0.50 °C/W

TO-247 0.21 °C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.

ISVGS = 0V 16 A

ISM Repetitive, Pulse Width Limited by TJM 64 A

VSD IF = IS, VGS = 0V, Note 1 1.5 V

trr 200 ns

IRM 6.0 A

QRM 0.6 μC

Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Resistive Switching Times

VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25

RG = 10Ω (External)

IF = 16A, -di/dt = 100A/μs

VR = 100V, VGS = 0V

TO-247 Outline

Pins: 1 - Gate 2 - Drain

3 - Source

TO-220 Outline

Pins: 1 - Gate

2 - Drain

3 - Source

TO-263 Outline

IXFA16N50P IXFP16N50P

IXFH16N50P

Fi g . 1. Ou tp u t C har acter i st i cs @ T

J

= 25ºC

0

5

10

15

20

0123456789

V

DS

- V o lt s

I

D

- Ampere s

V

GS

= 10V

8V

6V

7V

Fi g . 2. Ou tp u t C har acter i st i cs @ T

J

= 125ºC

0

5

10

15

20

0 2 4 6 8 101214161820

V

DS

- V o lts

I

D

- Ampere s

V

GS

= 10V

8V

7V

5V

6V

Fig. 3. R

DS(on)

Normalized to I

D

= 8A Valu e

vs. Ju n cti on Temp er atu r e

0.4

0.8

1.2

1.6

2.0

2.4

2.8

3.2

-50-250 255075100125150

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 16A

I

D

= 8A

Fig. 4. R

DS(on)

Normalized to I

D

= 8A Valu e

vs. D r ain C u r r ent

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

2.8

0 2 4 6 8 101214161820

I

D

- Amp e res

R

DS(on)

- Normalized

V

GS

= 10V

T

J

= 125ºC

T

J

= 25ºC

Fig. 6. Input Admittance

0

2

4

6

8

10

12

14

16

18

20

4.0 4.4 4.8 5.2 5.6 6.0 6.4 6.8 7.2

V

GS

- V o lts

I

D

- Ampere s

T

J

= 125ºC

25ºC

- 40ºC

Fi g . 5. Maximum D r ai n C u r r ent vs.

Case Temper a tu r e

0

2

4

6

8

10

12

14

16

18

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

I

D

- Amperes

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFA16N50P IXFP16N50P

IXFH16N50P

IXYS REF: F_16N50P(5J-745)5-1-09-C

Fig. 7. Tr ansconductance

0

4

8

12

16

20

24

28

0 2 4 6 8 10 12 14 16 18 20

I

D

- Amperes

g

f s

- Siemens

T

J

= - 40ºC

125ºC

25ºC

Fig. 8. Forward Voltag e Drop of Intrinsic Diode

0

10

20

30

40

50

60

70

0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2

V

SD

- Volts

I

S

- Am peres

T

J

= 125ºC

T

J

= 25ºC

Fi g . 9 . Gate C h ar ge

0

1

2

3

4

5

6

7

8

9

10

0 5 10 15 20 25 30 35 40 45

Q

G

- NanoCoulombs

V

GS

- Volt s

V

DS

= 250V

I

D

= 8A

I

G

= 10mA

Fi g. 10. C ap acitan ce

1

10

100

1,000

10,000

0 5 10 15 20 25 30 35 40

V

DS

- Volts

Capacitance - PicoFarads

f

= 1 MHz

Ciss

Crss

Coss

Fig. 11. Forward-Bias Safe Operating Area

1

10

100

10 100 1000

V

DS

- Vo lts

I

D

- Ampere s

T

J

= 150ºC

T

C

= 25ºC

Single Pulse

25µs

1ms

100µs

R

DS(on)

Limit

10ms

DC

Fi g . 12. Maxi mu m Transi en t Ther mal I mped an ce

0.01

0.1

1

0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z

(th)JC

- ºC / W