IGO60R070D1 IGO60R070D1 600V CoolGaNTM enhancement-mode Power Transistor Features * Enhancement mode transistor - Normally OFF switch * Ultra fast switching 1 * No reverse-recovery charge 20 * Capable of reverse conduction * Low gate charge, low output charge 11 1 * Superior commutation ruggedness 10 20 * Qualified for industrial applications according to JEDEC 11 10 Standards (JESD47 and JESD22) Benefits * Improves system efficiency * Improves power density Gate 9, 10 Drain 13,14,15,16,17,18 Kelvin Source 8 Source 1,2,3,4,5,6,7, heatslug not connected 11,12,19,20 * Enables higher operating frequency * System cost reduction savings * Reduces EMI Applications Industrial, telecom, datacenter SMPS based on the half-bridge topology (half-bridge topologies for hard and soft switching such as Totem pole PFC, high frequency LLC). For other applications: review CoolGaNTM reliability white paper and contact Infineon regional support Table 1 Key Performance Parameters at Tj = 25 C Parameter VDS,max RDS(on),max QG,typ ID,pulse Qoss @ 400 V Qrr Table 2 Value 600 70 5.8 60 41 0 Ordering Information Type / Ordering Code IGO60R070D1 Final Data Sheet Unit V m nC A nC nC www.infineon.com Package PG-DSO-20-85 Marking Related links 60R070D1 see Appendix A Please read the Important Notice and Warnings at the end of this document Rev. 2.1 2018-10-12 IGO60R070D1 600V CoolGaNTM enhancement-mode Power Transistor Table of Contents Features...... ................................................................................................................................1 Benefits ......................................................................................................................................1 Applications...........................................................................................................................................................1 Table of Contents ..................................................................................................................................................2 1 Maximum ratings ...............................................................................................................................3 2 Thermal characteristics .....................................................................................................................4 3 Electrical characteristics ....................................................................................................................5 4 Electrical characteristics diagrams ....................................................................................................7 5 Test Circuits .....................................................................................................................................13 6 Package Outlines .............................................................................................................................14 7 Appendix A .......................................................................................................................................15 8 Revision History ...............................................................................................................................16 Final Data Sheet 2 Rev. 2.1 2018-10-12 IGO60R070D1 600V CoolGaNTM enhancement-mode Power Transistor 1 Maximum ratings at Tj = 25 C, unless otherwise specified. Continuous application of maximum ratings can deteriorate transistor lifetime. For further information, contact your local Infineon sales office. Table 3 Maximum ratings Parameter Symbol Values Unit Min. Typ. Max. Note/Test Condition Drain Source Voltage 1 VDS,max - - 600 V VGS = 0 V Continuous current, drain source ID - - 31 20 14 A TC = 25 C; Tj = Tj, max TC = 100 C; Tj = Tj, max TC = 125 C; Tj = Tj, max Pulsed current, drain source 2 3 ID,pulse - - 60 A TC = 25 C; IG = 26.1 mA; See Figure 3;Figure 5; Pulsed current, drain source 3 4 ID,pulse - - 35 A TC = 125 C; IG = 26.1 mA; See Figure 4;Figure 6; Gate current, continuous 3 4 5 IG,avg - - 20 mA Tj = -55 C to 150 C; Gate current, pulsed IG,pulse - - 2000 mA Tj = -55 C to 150 C; tPULSE = 50 ns, f=100 kHz 35 Gate source voltage, continuous 5 VGS -10 - - V Tj = -55 C to 150 C; Gate source voltage, pulsed 5 VGS,pulse -25 - - V Tj = -55 C to 150 C; tPULSE = 50 ns, f = 100 kHz; open drain Power dissipation Ptot - - 125 W TC = 25 C Operating temperature Tj -55 - 150 C Storage temperature Tstg - 150 C Drain-source voltage slew-rate dV/dt 200 V/ns -55 Max shelf life depends on storage conditions. All devices are 100% tested at IDS = 12.2 mA to assure VDS 800 V Limits derived from product characterization, parameter not measured during production 3 Ensure that average gate drive current, IG,avg is 20 mA. Please see figure 27 for IG,avg, IG,pulse and IG details 4 Parameter is influenced by rel-requirements. Please contact the local Infineon Sales Office to get an assessment of your application. 5 We recommend using an advanced driving technique to optimize the device performance. Please see gate drive application note for details. Final Data Sheet 3 Rev. 2.1 2018-10-12 1 2 IGO60R070D1 600V CoolGaNTM enhancement-mode Power Transistor 2 Thermal characteristics Table 4 Thermal characteristics Parameter Symbol Values Unit Min. Typ. Max. Thermal resistance, junction-case RthJC - - 1 C/W Reflow soldering temperature Tsold - - 245 C Final Data Sheet 4 Note/Test Condition MSL3 Rev. 2.1 2018-10-12 IGO60R070D1 600V CoolGaNTM enhancement-mode Power Transistor 3 Electrical characteristics at Tj = 25 C, unless specified otherwise Table 5 Static characteristics Parameter Gate threshold voltage Drain-Source leakage current Symbol VGS(th) IDSS Drain-Source leakage current at IDSSapp application conditions1 Gate-Source leakage current IGSS Drain-Source on-state resistance Gate resistance Table 6 RDS(on) RG,int Values Unit Note/Test Condition Min. Typ. Max. 0.9 0.7 1.2 1.0 1.6 1.4 V - 1 20 100 - A VDS = 600 V; VGS = 0 V; Tj = 25 C VDS = 600 V; VGS = 0 V; Tj = 150 C - 60 - A V = 400 V; V = 0 V; T = 125 C DS GS j -1 -1 - - mA VDS = 0 V; VGS = -10 V; Tj = 25 C VDS = 0 V; VGS = -10 V; Tj = 125 C IDS = 2.6 mA; VDS = 10 V; Tj =25 C IDS = 2.6 mA; VDS = 10 V; Tj =125 C - 0.055 0.070 0.100 - IG = 26.1 mA; ID = 8 A; Tj = 25 C IG = 26.1 mA; ID = 8 A; Tj = 150 C - 0.78 LCR impedance measurement; f = fres ; open drain; - Dynamic characteristics Parameter Symbol Values Unit Min. Typ. Max. Note/Test Condition Input capacitance Ciss - 380 - pF VGS = 0 V; VDS = 400 V; f = 1 MHz Output capacitance Coss - 72 - pF VGS = 0 V; VDS = 400 V; f = 1 MHz Reverse Transfer capacitance Crss - 0.3 - pF VGS = 0 V; VDS = 400 V; f = 1 MHz Effective output capacitance, energy related 2 Co(er) - 80 - pF VDS = 0 to 400 V Effective output capacitance, time related 3 Co(tr) - 102.5 - pF VGS = 0 V; VDS = 0 to 400 V; Id = const Output charge Qoss - 41 - nC VDS = 0 to 400 V Turn- on delay time td(on) - - ns see Figure 23 Turn- off delay time td(off) - 15 15 - ns see Figure 23 Rise time tr - 9 - ns see Figure 23 Fall time tf - 13 - ns see Figure 23 1 2 3 Parameter represents end of use leakage in applications Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 400 V Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 400 V Final Data Sheet 5 Rev. 2.1 2018-10-12 IGO60R070D1 600V CoolGaNTM enhancement-mode Power Transistor Table 7 Gate charge characteristics Parameter Gate charge Symbol QG Table 8 Values Unit Min. Typ. Max. - 5.8 - nC Note/Test Condition IGS = 0 to 10 mA; VDS= 400 V; ID= 8 A Reverse conduction characteristics Parameter Symbol Values Unit Min. Typ. Max. Note/Test Condition Source-Drain reverse voltage VSD - 2.2 2.5 V VGS = 0 V; ISD = 8 A Pulsed current, reverse IS,pulse - - 60 A IG = 26.1 mA Reverse recovery charge Qrr 1 - 0 - nC IS = 8 A, VDS = 400 V Reverse recovery time trr - 0 - ns Peak reverse recovery current Irrm - 0 - A 1 Excluding Qoss Final Data Sheet 6 Rev. 2.1 2018-10-12 IGO60R070D1 600V CoolGaNTM enhancement-mode Power Transistor 4 Electrical characteristics diagrams at Tj = 25 C, unless specified otherwise Power dissipation Figure 1 Max. transient thermal impedance Figure 2 140 1 120 100 ZthJC (C/W) 0.1 PTOTAL (W) 80 60 D= 0.5 0.2 0.1 0.05 0.02 0.01 single pulse 0.01 40 20 0.001 0.01 0 0 20 40 60 80 100 120 140 160 1.00 10.00 100.00 Ptot=f(Tc) ZthJC=f(tp, D) Safe operating area Safe operating area Figure 4 100 100 tp = 20 ns tp = 20 ns tp = 10 s tp = 1 ms 10 tp = 100 s tp = 10 s tp = 100 s 10 DC Limited by RDS(on) Limited by RDS(on) ID (A) ID (A) 1000.00 Rectangular Pulse Duration (ms) TCASE (C) Figure 3 0.10 1 0.1 DC tp = 1 ms 1 0.1 0.01 0.01 1 10 VDS (V) 100 1 1000 10 100 1000 VDS (V) ID=f(VDS); TC = 25 C ID=f(VDS); TC = 125 C Final Data Sheet 7 Rev. 2.1 2018-10-12 IGO60R070D1 600V CoolGaNTM enhancement-mode Power Transistor Repetitive safe operating area1 Figure 5 70 70 60 60 50 50 tp 20ns Limited by RDS(on) 40 ID [A] 40 ID [A] Repetitive safe operating area1 Figure 6 30 30 tp 20ns 20 20 10 10 0 Limited by RDS(on) 0 0 100 200 300 400 500 600 0 100 200 VDS [V] Tc = 25 C; Tj 150 C 500 600 Typ. output characteristics Figure 8 90 90 IG=26.1 mA 80 80 IG=10 mA 70 70 IG=2.6 mA 60 IG=10 mA 50 ID [A] IG=0.26 mA 40 IG=26.1 mA 60 IG=1 mA 50 ID [A] 400 Tc = 125 C; Tj 150 C Typ. output characteristics Figure 7 300 VDS [V] IG=0.1 mA IG=2.6 mA 40 30 30 20 20 10 10 0 IG=1 mA IG=0.26 mA IG=0.1 mA 0 0 2 4 6 8 10 0 2 VDS [V] ID=f(VDS,IG); Tj = 25 C 4 6 8 10 VDS [V] ID=f(VDS,IG); Tj = 125 C Parameter is influenced by rel-requirements. Please contact the local Infineon Sales Office to get an assessment of your application. Final Data Sheet 8 Rev. 2.1 2018-10-12 1 IGO60R070D1 600V CoolGaNTM enhancement-mode Power Transistor Typ. Drain-source on-state resistance Figure 9 Figure 10 140 200 120 180 IG=0.26 mA IG=0.1 mA 160 100 IG=1 mA IG=10 mA 80 RDS(on) [m] RDS(on) (m) Drain-source on-state resistance 140 IG=2.6 mA IG=26.1 mA 120 VGS = 3 V 60 IG = 26.1 mA 40 20 100 0 80 -50 0 10 20 30 40 50 0 60 ID [A] RDS(on)=f(ID,IG); Tj = 125 C Figure 11 50 100 150 Tj [oC] RDS(on)=f(Tj); ID = 8 A Typ. gate characteristics forward Figure 12 Typ. gate characteristics reverse VGS (V) 500 -25 -20 -15 -10 -5 0 0 450 400 -50 350 -100 125C 25C -150 250 200 -200 IGS (mA) IGS (mA) 300 150 -250 100 50 -300 -55C 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -350 VGS (V) IGS=f(VGS,Tj); open drain IGS=f(VGS); Tj = 25 C Final Data Sheet 9 Rev. 2.1 2018-10-12 IGO60R070D1 600V CoolGaNTM enhancement-mode Power Transistor Typ. transfer characteristics Figure 13 Typ. transfer characteristics Figure 14 80 50 80 45 70 50 45 70 40 40 60 60 35 50 ID (A) 40 25 20 30 30 40 25 20 30 15 15 20 20 10 10 10 10 5 0 0 1 2 3 4 5 0 5 0 0 1 2 VGS (V) -5 VDS (V) -4 -3 -2 -1 Figure 16 0 -8 Typ. channel reverse characteristics VDS (V) -6 -4 -2 0 0 0 -1 -1 -2 -2 -3 -3 -4 -4 -5 ID (A) -6 -5 -6 -5V -4V -3V VDS=f(ID, VGS); Tj = 25 C Final Data Sheet -2V 5 ID, IG =f(VGS); VDS = 8 V ; Tj = 125 C Typ. channel reverse characteristics -7 4 VGS (V) ID, IG =f(VGS); VDS = 8 V; Tj = 25 C Figure 15 3 -1V 0V VGS ID (A) 0 -8 IG (mA) 30 IG (mA) ID (A) 50 35 -6 -5V -4V -3V -7 -2V -1V 0V VGS -7 -8 -8 -9 -9 -10 -10 VDS=f(ID, VGS); Tj = 125 C 10 Rev. 2.1 2018-10-12 IGO60R070D1 600V CoolGaNTM enhancement-mode Power Transistor Figure 17 Typ. channel reverse characteristics Typ. channel reverse characteristics Figure 18 60 60 +4V 50 50 0V +4V 40 IS (A) IS (A) 40 30 30 20 20 10 10 0 0V 0 0 2 4 6 VSD (V) 8 ID=f(VDS, VGS); Tj = 25 C Figure 19 0 2 4 VSD (V) 6 8 10 400 500 ID=f(VDS, VGS); Tj = 125 C Typ. gate charge Typ. capacitances Figure 20 3.5 1,000.0 Ciss 3.0 C (pF) 2.0 VGS (V) Coss 100.0 2.5 10.0 1.5 1.0 1.0 Crss 0.5 0.1 0.0 0 1 2 3 Q (nC) VGS = f(QG); VDCLINK = 400 V; ID = 8 A Final Data Sheet 4 5 0 6 100 200 300 VDS (V) CxSS = f(VDS) 11 Rev. 2.1 2018-10-12 IGO60R070D1 600V CoolGaNTM enhancement-mode Power Transistor Typ. output charge Figure 22 50 10 45 9 40 8 35 7 30 6 EOSS (J) QOSS (nC) Figure 21 25 20 5 4 15 3 10 2 5 1 0 Typ. Coss stored Energy 0 0 QOSS = f(VDS) Final Data Sheet 100 200 300 VDS (V) 400 500 0 100 200 300 VDS (V) 400 500 EOSS = f(VDS) 12 Rev. 2.1 2018-10-12 IGO60R070D1 600V CoolGaNTM enhancement-mode Power Transistor 5 Figure 23 Test Circuits Switching times with inductive load Figure 24 Switching times waveform D RSS RON CG T1 L G ROFF + S ID RSS CG T2 VDS RON D 400V SK G t SK ROFF S ID = 8A, RON = 10 ; ROFF = 10 ; RSS = 820 ; CG = 2 nF; VDRV = 12V Figure 25 Reverse Channel Characteristics Test Figure 26 Typical Reverse Channel Recovery D RSS RON CG T1 L G ROFF + S ID RSS CG T2 VDS RON D 400V SK G SK ROFF S ID = 8A, RON = 10 ; ROFF = 10 ; RSS = 820 ; CG = 2 nF; The recovery charge is QOSS only, no additional Qrr VDRV = 12V Figure 27 Gate current switching waveform IG,pulse IG IG, avg t Final Data Sheet 13 Rev. 2.1 2018-10-12 IGO60R070D1 600V CoolGaNTM enhancement-mode Power Transistor 6 Package Outlines Figure 28 PG-DSO-20-85 Package Outline, dimensions (mm) Final Data Sheet 14 Rev. 2.1 2018-10-12 IGO60R070D1 600V CoolGaNTM enhancement-mode Power Transistor 7 Appendix A Table 9 * * * * Related links IFX CoolGaNTM webpage: www.infineon.com/why-coolgan IFX CoolGaNTM reliability white paper: www.infineon.com/gan-reliability IFX CoolGaNTM gate drive application note: www.infineon.com/driving-coolgan IFX CoolGaNTM applications information: o www.infineon.com/gan-in-server-telecom o www.infineon.com/gan-in-wirelesscharging o www.infineon.com/gan-in-audio o www.infineon.com/gan-in-adapter-charger Final Data Sheet 15 Rev. 2.1 2018-10-12 IGO60R070D1 600V CoolGaNTM enhancement-mode Power Transistor 8 Revision History Major changes since the last revision Revision Date Description of change 2.0 2018-04-24 Final version release 2.1 2018-10-12 Updated application section; added Appendix A and Fig. 27; updated maximum rating table footnotes, switching times and figures. Final Data Sheet 16 Rev. 2.1 2018-10-12 Trademarks of Infineon Technologies AG HVICTM, IPMTM, PFCTM, AU-ConvertIRTM, AURIXTM, C166TM, CanPAKTM, CIPOSTM, CIPURSETM, CoolDPTM, CoolGaNTM, COOLiRTM, CoolMOSTM, CoolSETTM, CoolSiCTM, DAVETM, DI-POLTM, DirectFETTM, DrBladeTM, EasyPIMTM, EconoBRIDGETM, EconoDUALTM, EconoPACKTM, EconoPIMTM, EiceDRIVERTM, eupecTM, FCOSTM, GaNpowIRTM, HEXFETTM, HITFETTM, HybridPACKTM, iMOTIONTM, IRAMTM, ISOFACETM, IsoPACKTM, LEDrivIRTM, LITIXTM, MIPAQTM, ModSTACKTM, my-dTM, NovalithICTM, OPTIGATM, OptiMOSTM, ORIGATM, PowIRaudioTM, PowIRStageTM, PrimePACKTM, PrimeSTACKTM, PROFETTM, PRO-SILTM, RASICTM, REAL3TM, SmartLEWISTM, SOLID FLASHTM, SPOCTM, StrongIRFETTM, SupIRBuckTM, TEMPFETTM, TRENCHSTOPTM, TriCoreTM, UHVICTM, XHPTM, XMCTM Trademarks updated November 2015 Other Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2018-10-12 Published by Infineon Technologies AG 81726 Munchen, Germany (c) 2018 Infineon Technologies AG. All Rights Reserved. Do you have a question about this document? Email: erratum@infineon.com Document reference ifx1 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie") . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer's compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer's products and any use of the product of Infineon Technologies in customer's applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer's technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies' products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.