CD4073BMS, CD4081BMS HARRIS CD4082BMS SEMICONDUCTOR Go 573-814 December 1992 CMOS AND Gate Features Pinout * High-Voltage Types (20V Rating) CD40738MS TOP VIEW * CD4073BMS Triple 3-Input AND Gate CD4081BMS Quad 2-Input AND Gate v; * CD4082BMS Dual 4-Input AND Gate ay fa] voo 8 G * Medium Speed Operation: La pal - tPLH, tPHL = 60ns (typ) at VDD = 10V o [3 ha] H 100% Tested for Quiescent Current at 20V E f@ | F (5] Ho] La GeHel Maximum tnput Current of 1A at 18V Over Full Pack- age Temperature Range; 100nA at 18V and +25C K=D-E-F [6] fe] JaAsBec * Nolse Margin (Over Full Package Temperature Range): vss [| fs] c - 1Vat VDD =5V - 2Vat VDD = 10V ep40siams - 2.5V at VDD = 15V TOP VIEW e Standardized Symmetrical Output Characteristics 5V, 10V and 15V Parametric Ratings od g af Ha] vop Meets All Requirements of JEDEC Tentative Standard afl hal H No. 138, Standard Specifications for Description of B Serles CMOS Devices J=uAeB [3 ha] G _ K=ced [4] Hi] MaGeH Description c [i ha] Lee oF CD4073BMS, CD4081BMS and CD4082BMS AND gates o [6 [9] F provide the system designer with direct implementation of i the AND function and supplement the existing family of VSS LZ fale CMOS gates. The CD4073BMS, CD4081BMS and CD4082BMS are supplied cp4082BMS i lead outline packages: in these 14 TOP VIEW Braze Seal DIP *H4Q = tH4H vu Frit Seal DIP *H1B JaAeBeCeDd [1] Ha] VoD Ceramic Flatpack *H3W p [2] ha] KaEeF eG+H *CD4073B,CD4081B +CD4082B cfs na] H B [4] Hi] G VG ho] F ne [6 lg] e vss [7] fs] Ne NC = NO CONNECTION CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper |.C. Handling Procedures. File Number 3324 Copyright Harris Corporation 1992 7-1019CD4073BMS, CD4081BMS, CD4082BMS Functional Diagram voo A B c o E F I H Qa vss CD4073BMS voD 14 A J B 5 K D E L F G M H CD4081BMS wa zo nm > OoOD CO40828MS 7-1020Specifications CD4073BMS, CD4081BMS, CD4082BMS- Absolute Maximum Ratings DC Supply Voltage Range, (VDD) (Voltage Referenced to VSS Terminals) Input Voltage Range, All Inputs DC Input Current, Any One Input. ......... 62. c cece eens +10mA Operating Temperature Range..........-.--6- -55C to +125C Package Types D, F, K, H Storage Temperature Range (TSTG)........... -65C to +150C Lead Temperature (During Soldering) ..............-5- +265C At Distance 1/16 + 1/32 Inch (1.59mm + 0.79mm) from case for Reliability Information Thermal Resistance ................ Be Be Ceramic DIP and FRIT Package..... 80C WW 20C/W Flatpack Package ..........-...5: 7OCAV 20C/W Maximum Package Power Dissipation (PD) at +125C For TA = -55C to +100C (Package Type D,F,K) ...... S500mWw For TA = +100C to +125C (Package Type D, F, K)...... Derate Linearity at 12mW/C to 200mW Device Dissipation per Output Transistor ............... 100mw For TA = Full Package Temperature Range (All Package Types) 10s Maximum Junction Temperature .... 0... e cece eee eee eee +175C TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A LIMITS PARAMETER SYMBOL CONDITIONS (NOTE 1) SUBGROUPS; TEMPERATURE MIN | MAX {UNITS Supply Current IDD_~=s | VDD = 20V, VIN = VDD or GND 1 +25C - 5 HA 2 +125C - 50 pA VDD = 18V, VIN = VDD or GND 3 -55C - 5 BA Input Leakage Current Nit VIN = VOD or GND VDD = 20 1 425C -100 - nA 2 +125C -1000 - nA VDD = 18V 3 -55C -100 - nA Input Leakage Current iH VIN=VDDorGND- |VDD =20 1 +25C - 100 nA 2 +125C - 1000 | nA VDD = 18V 3 -55C - 100 nA Output Voltage VOL15 |VDD = 15V, No Load 1,2,3 +25C, +125C, -55C| = - 50 mV Output Voitage VOH15 [VDD = 15V, No Load (Note 3) 4,2,3 +25C, +125C, -55C| 14.95 - Vv Output Current (Sink) IOL5 =| VDD = 5V, VOUT = 0.4V 1 +25C 0.53 - mA Output Current (Sink) JOL10. =|VOD = 10V, VOUT = 0.5V 1 +25C 1.4 - mA Output Current (Sink) 1OL15 {VDD = 15V, VOUT = 1.5V 1 +25C 3.5 - mA Output Current (Source)| IOHSA |VOD = 5V, VOUT = 4.6V 1 425C - 0.53 | mA Output Current (Source)} IOHSB |VDD = 5V, VOUT = 2.5V 1 +25C - +18 mA Output Current (Source)] 1OH10 |VDD = 10V, VOUT = 9.5V 1 +25C - -1.4 | mA Output Current (Source)] 1OH15 |VDD = 15V, VOUT = 13.5V 1 +25C - -3.5 mA N Threshold Voltage VNTH_ [VOD = 10V, ISS = -10pA 1 425C -2.8 | 0.7 Vv P Threshold Voltage VPTH [VSS = OV, IDD = 10pA 1 425C 0.7 2.8 V Functional F VDD = 2.8V, VIN = VDD or GND 7 +25C VOH>|VOL<| V VDD = 20V, VIN = VDD or GND 7 +25C VOD/2 | VDD/2 VDD = 18V, VIN = VDD or GND 8A +125C VDD = 3V, VIN = VDD or GND 8B -55C Input Voltage Low VIL 1VDO=5V, VOH > 4.5V, VOL < 0.5V 1,2,3 +25C, +125C, -55C| - 1.5 Vv (Note 2) Input Voltage High VIH_ =| VDD = 5V, VOH > 4.5V, VOL < 0.5V 1,2,3 +25C, +125C, -55C] 3.5 : Vv (Note 2) Input Voltage Low ViL | VDD = 15V, VOH > 13.5V, 1,2,3 +25C, +125C, -55C}- 4 Vv (Note 2) VOL < 1.5V Input Voltage High VIH =| VDO = 15V, VOH > 13.5V, 1,2,3 425C, +125C, -55C! 11 - Vv (Note 2) VOL < 1.5V NOTES: 1. All voltages referenced to device GND, 100% testing being 3. For accuracy, voltage is measured differentially to VDD. Limit implemented. 2. Go/No Go test with limits applied to inputs. Is 0.050V max. 7-1021Specifications CD4073BMS, CD4081BMS, CD4082BMS TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A LIMITS PARAMETER SYMBOL} CONDITIONS (NOTES 1, 2) SUBGROUPS | TEMPERATURE| MIN MAX UNITS Propagation Delay TPHLE | VDD =5V, VIN = VOD or GND 9 +25C - 250 ns TPLH 10, 11 +125C, -55C - 338 ns Transition Time TTHL | VOD = SV, VIN = VDD or GND 9 +25C : 200 ns TTLH 10, 11 +125C, 55C | - 270 ns NOTES: 1. CL = 50pF, AL = 200K, Input TR, TF < 20ns. 2. -55C and +125C limits guaranteed, 100% testing being implemented. TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE} MIN MAX UNITS Supply Current 10D VDD = 5V, VIN = VDD or GND 1,2 -55C, +25C - 25 pA +125C - 7.5 pA VDD = 10V, VIN = VOD or GND 1,2 -55C, +25C : 5 pA +125C - 15 pA VOD = 15V, VIN = VOD or GND 1,2 55C, +25C - 5 pA +125C - 30 HA Output Voltage VOL | VDD = 5V, No Load 1,2 +28C, +125C, - 50 mV -55C Output Voltage VOL VDD = 10V, No Load 1,2 425C, +125C, - 50 mV -55C Output Voltage VOH_ | VOD = 5V, No Load 1,2 +26C, +125C, | 4.95 - Vv -5C , Output Voltage VOH VDD = 10V, No Load 1,2 +25C, +125C, 9.95 - Vv -55C Output Current (Sink) 1OL5 | VDD = 5V, VOUT = 0.4V 1,2 +125C 0.36 - mA 55C 0.64 - mA Output Current (Sink) IOL10 | VDD = 10V, VOUT =0.5V 1,2 +125C 0.9 - mA 55C 1.6 : mA Output Current (Sink) IOL15 | VOD = 15V, VOUT = 1.5V 1,2 +125C 2.4 - mA -55C 4.2 - mA Output Current (Source) IOHSA =| VDD = 5V, VOUT = 4.6V 1,2 +125C - -0.36 -55C - -0.64 mA Output Current (Source) {(OH5B (| VDD = 5V, VOUT = 2.5V 1,2 +125C - 1.15 -55C : -2.0 mA Output Current (Source) JOH10 =| VDD = 10V, VOUT = 9.5V 1,2 +125C - -0.9 mA -55C - -2.6 mA Output Current (Source) IOH15 | VDD =15V, VOUT = 13.5V: 1,2 +125C - -2.4 mA -55C : 4.2 mA Input Voltage Low VIL VOD = 10V, VOH > 9V, VOL < 1V 1,2 +25C, +125C, - 3 Vv -55C Input Voltage High VIH VOD = 10V, VOH > 9V, VOL < tV 1,2 +25C, +125C, 7 - V -55C 7-1022Specifications CD4073BMS, CD4081BMS, CD4082BMS TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) LIMITS PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE] MIN MAX UNITS Propagation Delay TPHL |VOD=10V 1,2,3 +25C : 120 ns TPLH [Vpp = 15V 1,2,3 +25C - 90 ns Transition Time TTHL | VDD =10V 1,2,3 425C - 100 ns TTLH [yop = 15V 1,2,3 +25C . 80 ns Input Capacitance CIN Any Input 1,2 +25C - 7.5 pF NOTES: 1. All voltages referenced to device GND. 2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on initial design release and upon design changes which would affect these characteristics. 3. CL = 50pF, RL = 200K, Input TR, TF < 20ns. TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE} MIN MAX UNITS Supply Current IDD VDD = 20V, VIN = VDD or GND 1,4 +25C - 2.5 pA N Threshold Voltage VNTH | VOD = 10V, ISS =-10pA 1,4 425C -2.8 -0.2 Vv N Threshold Voltage AVTN | VDD = 10V, ISS = -10nA - 1,4 +25C - +1 Vv Deita P Threshold Voltage VTP VSS = OV, IDD = 10nA 1,4 +25C 0.2 2.8 Vv P Threshold Voitage AVTP {VSS =OV,IDD = 10pA 1,4 +25C - +1 Vv Delta Functional F VDD = 18V, VIN = VDD or GND 1 +25C VOH > | VOL < Vv VDD = 3V, VIN = VDD or GND vob/2 | vOD/2 Propagation Delay Time TPHL | VDD =5V 1,2,3,4 +25C - 1.35 x ns TPLH +25C Limit NOTES: 1, All voltages referenced to device GND. 3. See Table 2 for +25C limit. 2. CL = 50pF, RL = 200K, input TR, TF < 20ns. 4. Read and Record TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25C PARAMETER SYMBOL DELTA LIMIT Supply Current - SS! 10D +0.1pA Output Current (Sink) 1OL5 + 20% x Pre-Test Reading Output Current (Source) IOH5A + 20% x Pre-Test Reading TABLE 6. APPLICABLE SUBGROUPS MIL-STD-883 CONFORMANCE GROUP METHOD GROUP A SUBGROUPS READ AND RECORD Initial Test (Pra Burn-in) 100% 5004 1,7,9 IDO, IOLS, |OHSA Interim Test 1 (Post Burn-in) 100% 5004 1,7,9 IDD, IOL5, 1OH5A Interim Test 2 (Post Burn-in) 100% 5004 1,7,9 IDD, |OL5, l|OH5A PDA (Note 1) 100% 5004 1,7, 9, Deltas Interim Test 3 (Post Burn-in) 100% 5004 1,7,9 IDOD, IOLS, IOH5A PDA (Note 1) 100% 5004 1,7, 9, Deltas 7-1023 6 f\fm*1fSpecifications CD4073BMS, CD4081BMS, CD4082BMS TABLE 6. APPLICABLE SUBGROUPS (Continued) MIL-STD-883 CONFORMANCE GROUP METHOD GROUP A SUBGROUPS READ AND RECORD Final Test 100% 5004 2, 3, BA, 88, 10, 11 Group A Sample 5005 1, 2,3, 7, 8A, 88, 9, 10, 11 Group B Subgroup B-5 Sample 5005 1,2, 3, 7, 8A, 8B, 9, 10, 11, Deltas Subgroups 1, 2, 3, 9, 10, 11 Subgroup 8-6 Sample 5005 1,7,9 Group D Sample 5005 1,2, 3, 8A, 88, 9 Subgroups 1,23 NOTE: 1.5% Parameteric, 3% Functional; Cumulative for Static 1 and 2. TABLE 7. TOTAL DOSE IRRADIATION MIL-STD-883 TEST READ AND RECORD CONFORMANCE GROUPS METHOD PRE-IRRAD POST-IRRAD PRE-IRRAD POST-IRRAD Group E Subgroup 2 5005 1,7,9 Table 4 1,9 Table 4 TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS OSCILLATOR FUNCTION OPEN GROUND vbDD 9V +-0.5V 50kHz | 25kHz - PART NUMBER CC04073BMS Static Burn-in 1 6, 9, 10 1-5,7,8, 11-13 14 Note 1 Static Burn-in 2 6, 9, 10 7 1-5,8,11-14 " Note 1 Dynamic Burn- - 7 14 6, 9, 10 1,5,8, 11-13 In Note 1 Irradiation 6, 9, 10 7 1-5,8, 11-14 Note 2 PART NUMBER CD4081BMS Static Burn-in 1 3, 4, 10, 14 1,2,5-9, 12,13 14 Note 1 Static Burn-in 2 3, 4,10, 11 7 1, 2, 5, 6, 8, 9, Note 1 12-14 Dynamic Burn- - 7 14 3, 4, 10, 11 1, 2, 5,6, 8, 9, 12, In Note 1 , 13 Irradiation 3, 4,10, 11 7 1, 2, 5, 6, 8, 9, Note 2 12-14 PART NUMBER CD4082BMS Static Burn-In 1 1,6, 8, 13 2-5,7,9-12 14 Note 1 . Static Burn-ln 2 1,6, 8,13 7 2-5,9- 12, 14 Nota 1 Dynamic Burn- 6,8 7 14 1,3 2-5,9-12 In Note 1 Irradiation 1, 6, 8, 13 7 2-5,9-12, 14 Note 2 NOTE: 1. Each pin except VDD and GND will have a series resistor of 10K + 5%, VDD = 18V + 0.5V 2. Each pin except VOD and GND will have a series resistor of 47K + 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures, VDD = 10V+0.5V 7-1024CD4073BMS, CD4081BMS, CD4082BMS ; VOD + 8 (5, 11) ~ {Fh +4 i Lis 1 (4,12) o- . PJ id ee = . r+ 4 > rs p a 2 (3, 13) Jt | ey n n 9 (6, 10) . | rT ft | LI SS JS f vss $ ALL INPUTS PROTECTED BY CMOS PROTECTION NETWORK FIGURE 1. SCHEMATIC DIAGRAM FOR CD4073BMS (1 OF 3 IDENTICAL GATES) A 14.19 - >> B J 2 (3, 13) . 9 (6, 10 c (6, 10) 2,19 of >> FIGURE 2. LOGIC DIAGRAM FOR CD4073BMS (1 OF 3 IDENTICAL GATES) vdO uv > E,W 2 (5, 9, 12) r+ 7 [= P P * ; I | 1 (6, 8, 13) lg | In 3 (4, 10, 11) n T i , nt * ALLINPUTS PROTECTED BY I | 5 5 CMOS PROTECTION NETWORK rt? _ - anal $ . vss FIGURE 3. SCHEMATIC DIAGRAM FOR CD4081BMS (1 OF 4 IDENTICAL GATES) A 1 (6, 8, 13) J B 3 (4, 10, 11) 2 (5, 9, 12) FIGURE 4. LOGIC DIAGRAM FOR CD4081BMS (1 OF 4 IDENTICAL GATES) 7-1025CD4073BMS, CD4081BMS, CD4082BMS uv he * Pp 3 (11) -4# n p _ oy = ee + | Us [IB 2 (12) f pe ett ye | |S -@ -<@ vss Pp. VDD 4+ sy Pp 4 (10) : [3 n re, @ e_ _ * *@ 7] 5 (9) _____ an ny Ie wd | pnd | IS ? ALL INPUTS PROTECTED BY . , CMOS PROTECTION NETWORK vss % FIGURE 5. SCHEMATIC DIAGRAM FOR C04082BMS (1 OF 2 IDENTICAL GATES) D 2 (12) c 3 (11) B 4(10) A 5 (9) Lt f J 1 (13) FIGURE 6. LOGIC DIAGRAM FOR CD4082BMS (1 OF 2 IDENTICAL GATES) Typical Performance Characteristics 20 _ a = o OUTPUT VOLTAGE (VO) (V) AMBIENT TEMPERATURE (Tq) = +25C SUPPLY VOLTAGE (VDO) = 15V 10V 5 10 15 20 25 INPUT VOLTAGE (VIN) () FIGURE 7. TYPICAL VOLTAGE TRANSFER CHARACTERISTICS FIGURE 8. TYPICAL PROPAGATION DELAY TIME AS A PROPAGATION DELAY TIME (TPHL, THLH) (ns) AMBIENT TEMPERATURE (Tg) = +25C SUPPLY VOLTAGE R 8 a a 10 LOAD CAPACITANCE (CL) (pF) FUNCTION OF LOAD CAPACITANCE a 37 4 50 6 70 80 9 100 7-1026CD4073BMS, CD4081BMS, CD4082BMS Typical Performance Characteristics (Continued) ___[ AMBIENT TEMPERATURE (Ta) = +25C _ AMBIENT TEMPERATURE (Tq) = 425C 5 a 2 2 15.0 30 |_ __- GATE-TO-SOURCE VOLTAGE (VGS) = 15V- = = GATE-TO-SOURCE VOLTAGE (VGS) = 15V 125 ee 8 20 7 g 10.9 K : z z & 15 f TaV 2 7s / 10V, g 10 [7 i} 5.0 // : : a 5 5 By 25 27 0 5 10 15 0 5 10 15 DRAIN-TO-SOURCE VOLTAGE (VDS) (V) DRAIN-TO-SOURCE VOLTAGE (VDS) (V) FIGURE 9. TYPICAL OUTPUT LOW (SINK) CURRENT FIGURE 10. MINIMUM OUTPUT LOW (SINK) CURRENT CHARACTERISTICS CHARACTERISTICS DRAIN-TO-SOURCE VOLTAGE (VDS) (V) DRAIN-TO-SOURCE VOLTAGE (VDS) (V) 15 -10 s 0, 15 10 s O. AMBIENT TEMPERATURE (Ta) = 426C z AMBIENT TEMPERATURE (Ta) = 425C = GATE-TO-SOURCE VOLTAGE (VGS) = 5V 56 = GATE-TO-SOURCE VOLTAGE (VGS) = 5V = 3 S -10 5 Jf | 8 i 15 x -10V ; 10 20 & 10 @ : : 33 B -15V 3 -15V 3 ee 2 159 5 5 a E 5 } 3 FIGURE 11. TYPICAL OUTPUT HIGH (SOURCE) CURRENT FIGURE 12. MINIMUM OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS CHARACTERISTICS T T T T 10 TEMPERATURE (T,) = AMBIENT TEMPERATURE (Ta) = +25C = s 2 e 2 SUPPLY VOLTAGE (VDD) = 15V =z we 104 1 5 EB 200 G Z e | E = a 2 = 159 SUPPLY VOLTAGE (VDD) = 5V 2 10? : = 6 z Ee z < Q 100 oe a 2 E 10V 10? 3 a o's z * ge 5V a 6 z 50 S 4 CL = 50pF sam 2 2 CL = 15pF sans Q "0 2 2 468 468 2 468 2 468 * LoaD CAPACITANCE (CL) GF) 1 10 10? 10 108 INPUT FREQUENCY (fl) (kHz) FIGURE 13. TYPICAL TRANSITION TIME AS A FUNCTION OF FIGURE 14. TYPICAL DYNAMIC POWER DISSIPATIONPER LOAD CAPACITANCE GATE AS A FUNCTION OF FREQUENCY 7-1027CD4073BMS, CD4081BMS, CD4082BMS Chip Dimensions and Pad Layouts $0 - 50 40 40 3 StSre = 56-64 = _ 30- (1.422- 1.626) 30 1a 57-65 = (1448-1651) 20- 20 1o~ Te) i e! 4-10 oO 4-10 (0.102-0.254) 1 og Gw2-a2s4 (1549-1.753) | 1448-Le5n - C04081BMS CO04082BMS 62 pope eee 62 tT { e 40- 59-67 . 449-1701) 30 20- . to 8 3 4 5s o t | L. 4-10 | (0.102-0.254) 39-67 1.449-1.701) CD40738MS Dimensions in parentheses are in millimeters and are derived from the basic inch dimensions as indicated. Grid- graduations are in mils (10 inch) METALLIZATION: Thickness: 11kA - 14kA, AL. PASSIVATION: 10.4kA - 15.6kA, Silane BOND PADS: 0.004 inches X 0.004 inches MIN DIE THICKNESS: 0.0198 inches - 0.0219 inches 7-1028