EGP10A-EGP10K
EPG10A - EPG10K, Rev. C2001 Fairchild Semiconductor Corporation
EGP10A - EGP10K
Fast Rectifiers (Glass Passivated)
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics TA = 25°C unless otherwise noted
Features
•Superfast recovery time for high
efficiency.
•Low forward voltage, high current
capability.
• Low leakage current.
• High surge current capability.
DO-41
COLOR BAND DENOTES CATHODE
Thermal Characteristics
Symbol
Parameter
Value
Units
PD Power Dissipation 2.5 W
RθJA T hermal Resistance, Junction to Ambient 50 °C/W
Symbol
Parameter
Device
Units
10A 10B 10C 10D 10F 10G 10J 10K
VF Forward Voltage @ 1.0 A 0.95 1.25 1.7 V
trr Reverse Recovery Time
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A 50
75 ns
IR Reverse Current @ rated VR TA = 25°C
TA = 125°C 5.0
100 µA
µA
CT Total Capacitance
V
R = 4.0 V, f = 1.0 MHz 22 15 pF
Symbol
Parameter
Value
Units
10A 10B 10C 10D 10F 10G 10J 10K
VRRM Maximum Repetitive Reverse Voltage 50 100 150 200 300 400 600 800 V
IF(AV) Average Rectifi ed Forward Current,
.375 " lead length @ TL = 55°C 1.0 A
IFSM Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave 30 A
Tstg Storage Temperature Range -65 to +150 °C
TJ Operating Junction Temperat ure -65 to +150 °C
EPG10A - EPG10K, Rev. C
EGP10A-EGP10K
2001 Fairchild Semiconductor Corporation
Typical Characteristics
Pulse
Generator
(Note 2)
50Ω
NONINDUCTIVE 50Ω
NONINDUCTIVE
DUT
(-)
(+)
OSCILLOSCOPE
(Note 1)
50Ω
NONINDUCTIVE
50V
(approx)
NOTES:
1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf.
2. Rise time = 10 ns max; Source impedance = 50 ohms.
Reverse Recovery Time Characterstic and Test Circuit Diagram
1.0cm SET TIME BASE FOR
trr
+0.5A
0
-0.25A
-1.0A
5/ 10 ns/ cm
1 2 5 10 20 50 100
0
5
10
15
20
25
30
Number of Cycles at 60Hz
Peak Forward Surge Current, IFSM [A]
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
0.01
0.1
1
10
50
Forward Voltage, VF [V]
Forward Current, IF [A]
P ulse Wi dth = 300µ
µµ
µs
2% Duty Cycle
T = 25 C
º
A
EGP10A-EGP10D
EGP10F-EGP10K
T = 150 C
º
A
0 20406080100120140
0.01
0.1
1
10
100
1000
Percent of Rated Peak Reverse Voltage [%]
Reverse Current, IR [mA]
T = 25 C
º
A
T = 10 0 C
º
A
T = 12 5 C
º
A
0.1 1 10 100 1000
0
10
20
30
40
50
60
Reverse Voltage, VR [V]
Total Capacitance, CT [pF]
EGP10F-EGP1 0K
EGP10A-EGP10D
25 50 75 100 125 150 175
0
0.25
0.5
0.75
1
Lead Temperature [ºC]
Average Rectified Forward Current, IF [A]
SINGLE PHASE
HA LF WAV E
60 HZ
RESISTIVE OR
INDUCTIVE LOAD
.375" (9.0mm) LEAD
LENGTH S
Figure 1. Forward Current Derating Curve Figure 2. Non-Repetitive Surge Current
Figure 3. Forward Voltage Characteristics Figure 4. Reverse Current vs Reverse Voltage
Figure 5. Total Capacitance
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NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
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Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
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