EGP10A-EGP10K
EPG10A - EPG10K, Rev. C2001 Fairchild Semiconductor Corporation
EGP10A - EGP10K
Fast Rectifiers (Glass Passivated)
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics TA = 25°C unless otherwise noted
Features
•Superfast recovery time for high
efficiency.
•Low forward voltage, high current
capability.
• Low leakage current.
• High surge current capability.
DO-41
COLOR BAND DENOTES CATHODE
Thermal Characteristics
Symbol
Parameter
Value
Units
PD Power Dissipation 2.5 W
RθJA T hermal Resistance, Junction to Ambient 50 °C/W
Symbol
Parameter
Device
Units
10A 10B 10C 10D 10F 10G 10J 10K
VF Forward Voltage @ 1.0 A 0.95 1.25 1.7 V
trr Reverse Recovery Time
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A 50
75 ns
IR Reverse Current @ rated VR TA = 25°C
TA = 125°C 5.0
100 µA
µA
CT Total Capacitance
V
R = 4.0 V, f = 1.0 MHz 22 15 pF
Symbol
Parameter
Value
Units
10A 10B 10C 10D 10F 10G 10J 10K
VRRM Maximum Repetitive Reverse Voltage 50 100 150 200 300 400 600 800 V
IF(AV) Average Rectifi ed Forward Current,
.375 " lead length @ TL = 55°C 1.0 A
IFSM Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave 30 A
Tstg Storage Temperature Range -65 to +150 °C
TJ Operating Junction Temperat ure -65 to +150 °C
EPG10A - EPG10K, Rev. C
EGP10A-EGP10K
2001 Fairchild Semiconductor Corporation
Typical Characteristics
Pulse
Generator
(Note 2)
50Ω
NONINDUCTIVE 50Ω
NONINDUCTIVE
DUT
(-)
(+)
OSCILLOSCOPE
(Note 1)
50Ω
NONINDUCTIVE
50V
(approx)
NOTES:
1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf.
2. Rise time = 10 ns max; Source impedance = 50 ohms.
Reverse Recovery Time Characterstic and Test Circuit Diagram
1.0cm SET TIME BASE FOR
trr
+0.5A
0
-0.25A
-1.0A
5/ 10 ns/ cm
1 2 5 10 20 50 100
0
5
10
15
20
25
30
Number of Cycles at 60Hz
Peak Forward Surge Current, IFSM [A]
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
0.01
0.1
1
10
50
Forward Voltage, VF [V]
Forward Current, IF [A]
P ulse Wi dth = 300µ
µµ
µs
2% Duty Cycle
T = 25 C
º
A
EGP10A-EGP10D
EGP10F-EGP10K
T = 150 C
º
A
0 20406080100120140
0.01
0.1
1
10
100
1000
Percent of Rated Peak Reverse Voltage [%]
Reverse Current, IR [mA]
T = 25 C
º
A
T = 10 0 C
º
A
T = 12 5 C
º
A
0.1 1 10 100 1000
0
10
20
30
40
50
60
Reverse Voltage, VR [V]
Total Capacitance, CT [pF]
EGP10F-EGP1 0K
EGP10A-EGP10D
25 50 75 100 125 150 175
0
0.25
0.5
0.75
1
Lead Temperature [ºC]
Average Rectified Forward Current, IF [A]
SINGLE PHASE
HA LF WAV E
60 HZ
RESISTIVE OR
INDUCTIVE LOAD
.375" (9.0mm) LEAD
LENGTH S
Figure 1. Forward Current Derating Curve Figure 2. Non-Repetitive Surge Current
Figure 3. Forward Voltage Characteristics Figure 4. Reverse Current vs Reverse Voltage
Figure 5. Total Capacitance
