TECHNICAL DATA
PNP POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/315
Devices Qualified Level
2N2880 2N3749
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings Symbol Value Units
Collector-Emitter Voltage VCEO 80 Vdc
Collector-Base Voltage VCBO 110 Vdc
Emitter-Base Voltage VEBO 8.0 Vdc
Base Current IB 0.5 Adc
Collector Current IC 5.0 Adc
Total Power Dissipation @ TA = 250C (1)
@ TC = 1000C (2) PT 2.0
30 W
Operating & Storage Junction Temperature Range Top, Tstg -65 to +200 0C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction-to-Case RθJC 3.33 0C/W
1) Derate linearly 11.4 mW/0C for TA > 250C
2) Derate linearly 300 mW/0C for TC > 1000C
TO-59*
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 100 mAdc V(BR)CEO 80 Vdc
Collector-Emitter Breakdown Voltage
IC = 10 µAdc V(BR)CBO 110 Vdc
Emitter-Base Breakdown to Voltage
IE = 10 µAdc V(BR)EBO 8.0 Vdc
Collector-Emitter Cutoff Current
VCE = 60 Vdc ICEO 20 µAdc
Collector-Base Cutoff Current
VCB = 80 Vdc ICBO 0.2 µAdc
Collector-Emitter Cutoff Current
VCE = 110 Vdc, VBE = -0.5 ICEX 1.0 µAdc
Emitter-Base Cutoff Current
VEB = 6.0 Vdc IEBO 0.2 µAdc
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