(SEE REVERSE SIDE)
MPQ3798
MPQ3799
PNP SILICON QUAD TRANSISTOR
TO-116 CASE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR MPQ3798, MPQ3799 types are comprised of four independent Silicon PNP
Transistors mounted in a 14 PIN DIP, designed for low level and low noise applications.
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
MPQ3798 MPQ3799 UNITS
Collector-Base Voltage VCBO 60 60 V
Collector-Emitter Voltage VCEO 40 60 V
Emitter-Base Voltage VEBO 5.0 V
Collector Current IC 50 mA
Power Dissipation (Each Transistor) PD 500 mW
Power Dissipation (Total Package) PD 900 mW
Operating and Storage
Junction Temperature TJ,Tstg -65 to +150 °C
Thermal Resistance (Total Package) ΘJA 139 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
MPQ3798 MPQ3799
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
ICBO VCB=50V 10 10 nA
IEBO VEB=3.0V 20 20 nA
BVCBO IC=10µA 60 60 V
BVCEO IC=10mA 40 60 V
BVEBO IE=10µA 5.0 5.0 V
VCE(SAT) IC=100µA, IB=10µA 0.2 0.2 V
VCE(SAT) IC=1.0mA, IB=100µA 0.25 0.25 V
VBE(SAT) IC=100µA, IB=10µA 0.7 0.7 V
VBE(SAT) IC=1.0mA, IB=100µA 0.8 0.8 V
hFE VCE=5.0V, IC=10µA 100 225
hFE VCE=5.0V, IC=100µA 150 300
hFE VCE=5.0V, IC=500µA 150 300
hFE VCE=5.0V, IC=10mA 125 250
fT VCE=5.0V, IC=1.0mA, f=100MHz 60 60 MHz
Cob VCB=5.0V, IE=0, f=1.0MHz 4.0 4.0 pF
Cib VEB=0.5V, IC=0, f=1.0MHz 8.0 8.0 pF
NF VCE=10V, IC=100µA, RS=3kΩ,
f=10Hz to 15.7kHz 2.5 TYP 1.5 TYP dB