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M600GA124.XLS-15
10
100
1000
10000
0 200 400 600 800 1000
ICA
t
ns
tdoff
tdon
tr
tf
M600GA124.XLS-18
0
5
10
15
20
25
30
35
40
0 200 400 600 800 1000
IFA
EoffD
mJ
5 Ω
4 Ω
10 Ω
RG=
M600GA124.XLS-16
10
100
1000
10000
2 4 6 8 10 12
RG
t
ns tdoff
tdon
tr
tf
M600GA124.XLS-13
0
2
4
6
8
10
12
14
16
18
20
0 1000 2000 3000 4000
QGate nC
VGE
V
600
800V
M600GA124.XLS-14
1
10
100
0 102030
VCE V
C
nF Cies
Coes
Cres
M600GA124.XLS-17
0
200
400
600
800
0123
VFV
IF
ATj=125°C, typ.
Tj=25°C, typ.
Tj=125°C,
max.
T
j
=25°C, max.
Fig. 13 Typ. gate charge characteristic Fig. 14 Typ. capacitances vs.VCE
VGE = 0 V
f = 1 MHz
Fig. 15 Typ. switching times vs. ICFig. 16 Typ. switching times vs. gate resistor RG
Fig. 17 Typ. CAL diode forward characteristic Fig. 18 Diode turn-off energy dissipation per pulse
Tj = 125 °C
VCE = 600 V
VGE = ± 15 V
IC = 400 A
induct. load
ICpuls = 400 A
Tj = 125 °C
VCE = 600 V
VGE = ± 15 V
RGon = 4
RGoff = 4
induct. load
VCC = 600 V
Tj = 125 °C
VGE = ± 15 V
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© by SEM IKRO N 010502 B 6 – 35
SKM 600 GA 12 4 D
M600GA124.XLS-24
0
20
40
60
80
100
120
0 1000 2000 3000 4000 5000 6000
diF/dt A/µs
Qrr
µC IF=
400 A
300 A
200 A
100 A
5 4 Ω
10 Ω
RG=
800 A
M600GA124.XLS-23
0
100
200
300
400
500
600
0 2000 4000 6000 8000
diF/dt A/µs
IRR
A
5 Ω
4 Ω
10 Ω
RG
M600GA124.XLS-22
0
100
200
300
400
500
0 200 400 600 800 1000
IFA
IRR
A
5 Ω
4 Ω
10 Ω
RG
M600GA124.XLS-20
0,0001
0,001
0,01
0,1
0,00001 0,0001 0,001 0,01 0,1 1
s
ZthJC
K/W
D=0,5
0,2
0,1
0,05
0,02
0,01
single pulse
tp
M600GA124.XLS-19
0,00001
0,0001
0,001
0,01
0,1
0,00001 0,0001 0,001 0,01 0,1 1
tps
ZthJC
K/W
D=0,50
0,20
0,10
0,05
0,02
0,01
single pulse
Fig. 19 Transient thermal impedance of IGBT
ZthJC = f (tp); D = tp / tc = tp · f Fig. 20 Transient thermal impedance of
inverse CAL diodes ZthJC = f (tp); D = tp / tc = tp · f
Fig. 22 Typ. CAL diode peak reverse recovery
current IRR = f (IF; RG)Fig. 23 Typ. CAL diode peak reverse recovery
current IRR = f (diF/dt; RG)
Fig. 24 Typ. CAL diode recovered charge
QRR = f (diF/dt; IF; RG
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