DS15005 Rev. E-2 1 of 2 RS3A/B - RS3M/B
www.diodes.com ã Diodes Incorporated
RS3A/B - RS3M/B
3.0A SURFACE MOUNT FAST RECOVERY RECTIFIER
Features
AB, BB, DB, GB, JB, KB, MB Suffix Designates SMB Package
A, B, D, G, J, K, M Suffix Designates SMC Package
SMB SMC
Dim Min Max Min Max
A3.30 3.94 5.59 6.22
B4.06 4.57 6.60 7.11
C1.96 2.21 2.75 3.18
D0.15 0.31 0.15 0.31
E5.00 5.59 7.75 8.13
G0.10 0.20 0.10 0.20
H0.76 1.52 0.76 1.52
J2.00 2.62 2.00 2.62
All Dimensions in mm
A
B
C
D
G
H
E
J
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
·Glass Passivated Die Construction
·Fast Recovery Time for High Efficiency
·Low Forward Voltage Drop and High Current
Capability
·Surge Overload Rating to 100A Peak
·Ideally Suited for Automatic Assembly
·Plastic Material: UL Flammability
Classification Rating 94V-0
Mechanical Data
·Case: Molded Plastic
·Terminals: Solder Plated Terminal -
Solderable per MIL-STD-202, Method 208
·Polarity: Cathode Band or Cathode Notch
·Marking: Type Number
·SMB Weight: 0.09 grams (approx.)
·SMC Weight: 0.20 grams (approx.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol RS3
A/AB
RS3
B/BB
RS3
D/DB
RS3
G/GB
RS3
J/JB
RS3
K/KB
RS3
M/MB Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50 100 200 400 600 800 1000 V
RMS Reverse Voltage VR(RMS) 35 70 140 280 420 560 700 V
Average Rectified Output Current @ TT = 75°CIO3.0 A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method)
IFSM 100 A
Forward Voltage @ IF = 3.0A VFM 1.3 V
Peak Reverse Current @ TA = 25°C
at Rated DC Blocking Voltage @ TA = 125°CIRM 5.0
250 mA
Maximum Recovery Time (Note 3) trr 150 250 500 ns
Typical Junction Capacitance (Note 2) Cj50 pF
Typical Thermal Resistance Junction to Terminal (Note 1) RqJT 25 K/W
Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C
Notes: 1. Thermal resistance: junction to terminal, unit mounted on PC board with 5.0 mm2 (0.013 mm thick) copper pad as heat sink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Reverse recovery test conditions: IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5.
SPICE MODELS: RS3A RS3B RS3D RS3G RS3J RS3K RS3M RS3AB RS3BB RS3DB RS3GB RS3JB RS3KB RS3MB
DS15005 Rev. E-2 2 of 2 RS3A/B - RS3M/B
www.diodes.com
0
0.5
1.0
25 50 75 100 125 150 175
I , AVERAGE FORWARD CURRENT (A)
(AV)
T , TERMINAL TEMPERATURE (°C)
T
Fi
g
. 1 Forward Current Deratin
g
Curve
1.5
2.0
2.5
3.0
0.01
0.1
1.0
10
0 0.4 0.8 1.2 1.6
T = 25°C
j
I INSTANTANEOUS FORWARD CURRENT (A)
F,
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Fi
g
. 2 T
y
pical Forward Characteristics
0
20
1 10 100
I , PEAK FORWARD SURGE CURRENT (A
)
FSM
NUMBER OF CYCLES AT 60 Hz
Fi
g
. 3 Forward Sur
g
e Current Deratin
g
Curve
Single Half-Sine-Wave
(JEDEC Method)
40
60
80
100
50V DC
Approx
Oscilloscope
(Note 1)
Pulse
Generator
(Note 2)
Device
Under
Test
trr
Set time base for 50/100 ns/cm
+0.5A
0A
-0.25A
-1.0A
Fi
g
. 5 Reverse Recover
y
Time Characteristic and Test Circuit
(+)
(+)
(-)
(-)
0.1
1.0
10
100
1000
0 20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fi
g
.4 T
y
pical Reverse Characteristics
T = 125°C
j
T=25°C
j