JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220 Plastic-Encapsulate Transistors
3DD13005 TRANSISTOR（ NPN ）
FEATURES
Power dissipation
P
CM : 1.5 W（Tamb=25℃）
Collector current
I
CM: 4 A
Collector-base voltage
V(BR)CBO : 700 V
Operating and storage junction temperature range
T
J，Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic= 1000 µA，IE=0 700 V
Collector-emitter breakdown voltage V(BR)CEO Ic= 10 mA，IB=0 400 V
Emitter-base breakdown voltage V(BR)EBO IE= 1000 µA，IC=0 9 V
Collector cut-off current I
CBO VCB= 700 V， I
E=0 1000 µA
Collector cut-off current I
CEO VCE= 400 V， I
B=0 100 µA
Emitter cut-off current I
EBO VEB= 9 V， I
C=0 1000 µA
DC current gain hFE VCE= 5 V, IC= 1000mA 10 40
Collector-emitter saturation voltage VCE (sat) IC=2000mA,IB=500 mA
0.6 V
Base-emitter saturation voltage VBE (sat) IC=2000mA, IB= 500mA
1.6 V
Transition Frequency f T VCE=10 V, IC=500mA
f = 1MHz 5 MHz
Fall time t f 0.9 µs
Storage time t s
I
B1=-IB2=0.4A, IC=2A
VCC=120V 4 µs
CLASSIFICATION OF hFE
Rank
Range 10-15 15-20 20-25 25-30 30-35 35-40
1 2 3
TO—220
1.BASE
2.COLLECTOR
3.EMITTER
D
C1
C
A
A1
b
b1
E
F
E1
L
L1
e
e1
TO-220-3L PACKAGE OUTLINE DIMENSIONS
Symbol
A
A1
b
b1
c
c1
D
E
E1
e
e1
F
L
L1
φ
Min
4.470
2.520
0.710
1.170
0.310
1.710
10.010
8.500
12.060
4.980
2.590
13.400
3.560
3.790
Max
4.670
2.820
0.910
1.370
0.530
1.370
10.310
8.900
12.460
5.180
2.890
13.800
3.960
3.890
Min
1.176
0.099
0.028
0.046
0.012
0.046
0.394
0.335
0.475
0.196
0.102
0.528
0.140
0.149
Max
0.184
0.111
0.036
0.054
0.021
0.054
0.406
0.350
0.491
0.204
0.114
0.543
0.156
0.153
Dimensions In Millimeters Dimensions In Inches
0.100TYP
2.540TYP
φ
