ES07B / ES07D
Document Number 85737
Rev. 1.7, 13-Apr-05
Vishay Semiconductors
www.vishay.com
1
17249
Small Surface Mount Ultrafast Diodes
Features
• For surface mounted applications
• Low profile package
• Ideal for automated placement
• Glass passivated
• High temperature soldering:
260 °C/ 10 seconds at terminals
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Mechanical Data
Case: JEDEC DO-219AB (SMF®) Plastic case
Polarity: Band denotes cathode end
Weight: approx. 15 mg
Packaging codes-options:
GS18 / 10 K per 13" reel (8 mm tape), 50 k/box
GS08 / 3 K per 7" reel (8 mm tape), 30 k/box
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
1) Mounted on epoxy glass PCB with 3 x 3 mm, Cu pads (≥ 40 µm thick)
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
1) Mounted on epoxy glass PCB with 3 x 3 mm, Cu pads (≥ 40 µm thick)
Part Ordering code Marking Remarks
ES07B ES07B-GS18 or ES07B-GS08 EB Tape and Reel
ES07D ES07D-GS18 or ES07D-GS08 ED Tape and Reel
Parameter Test condition Part Symbol Value Unit
Maximum repetitive peak reverse voltage ES07B VRRM 100 V
ES07D VRRM 200 V
Maximum RMS voltage ES07B VRMS 70 V
ES07D VRMS 140 V
Maximum DC blocking voltage ES07B VDC 100 V
ES07D VDC 200 V
Maximum average forward rectified current Ttp = 105 °C IF(AV) 1.2 A
TA = 65 °C1) IF(AV) 0.5 A
Peak forward surge current 8.3 ms single
half sine-wave
TL = 25 °C IFSM 30 A
Parameter Test condition Symbol Value Unit
Thermal resistance junction to ambient air1) RthJA 180 K/W
Operating junction and storage
temperature range
TJ, TSTG - 55 to + 150 °C
e3
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Document Number 85737
Rev. 1.7, 13-Apr-05
ES07B / ES07D
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
3) Pulse test, 300 µs pulse with 1 % duty cycle
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Parameter Test condition Symbol Min Typ. Max Unit
Maximum instantaneous
forward voltage
1.0 A3) VF0.98 V
Maximum DC reverse current at
rated DC blocking voltage
TA = 25°C IR10 µA
TA = 100°C IR50 µA
Reverse recovery time IF = 0.5 A, IR = 1 A, Irr = 0.25 A trr 25 ns
Typical capacitance 4 V, 1 MHz Cj4pF
Figure 1. Typical Forward Characteristics
Figure 2. Forward Current Derating Curve
0,001
0,01
0,1
1
10
0,00 0,20 0,40 0,60 0,80 1,00 1,20 1,40
VF[V]
IF[A]
typical @ 25°C
typical @ 150°C
typical @ 100°C
18242
0,0
0,2
0,4
0,6
0,8
1,0
1,2
1,4
025 50 75 100 125 150
Temperature (Ambient or Tie) [°C]
Average Forward Current [A]
ambient temperature
tie point temperature
18243
Figure 3. Typ. Diode Capacitance vs. Reverse Voltage
Figure 4. Typical Reverse Characteristics
0,00
1,00
2,00
3,00
4,00
5,00
6,00
7,00
0,1 110 100
VR[V]
CD[pF]
f= 1MHz
18244
020 40 60 80 100 120 140 160 180 200
VR[V]
IR[µA]
TJ=25°C
TJ=50°C
TJ=75°C
TJ=100°C
TJ=125°C
TJ=150°C
TJ=0°C
TJ=-50°C
1000
100
10
1
0,1
0,01
18245
ES07B / ES07D
Document Number 85737
Rev. 1.7, 13-Apr-05
Vishay Semiconductors
www.vishay.com
3
Package Dimensions in mm (Inches)
Top View
5
5
Z
Cathode Band
Detail
Z
enlarged
0.10 max
17247
0.85 (0.033)
0.35 (0.014)
3.9 (0.152)
3.5 (0.137)
0.99 (0.039)
0.97 (0.038)
0.16 (0.006)
1.9 (0.074)
1.7 (0.066)
1.2 (0.047)
0.8 (0.031)
2.9 (0.113)
2.7 (0.105)
ISO Method E
1.6 (0.062) 1.3 (0.051)
1.4 (0.055)
Mounting Pad Layout
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Document Number 85737
Rev. 1.7, 13-Apr-05
ES07B / ES07D
Vishay Semiconductors
Blistertape for SMF
18513
PS
ES07B / ES07D
Document Number 85737
Rev. 1.7, 13-Apr-05
Vishay Semiconductors
www.vishay.com
5
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect t their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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