PS2706-1F3 - NEC Electronics

DATA SHEET

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PHOTOCOUPLER

PS2706-1

AC INPUT RESPONSE

DARLINGTON TRANSISTOR

SOP MULTI PHOTOCOUPLER SERIES −NEPOC Series−

The mark •

••

• shows major revised poi nts.

Document No. PN10244EJ01V0DS (1st edition)

(Previous No. P11310EJ5V0DS00)

Date Published February 2003 CP(K)

Printed in Japan 





NEC Compound Semiconductor Devices 1988, 2003

DESCRIPTION

The PS2706-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon

darlington-connected phototransistor.

This is mounted in a plastic SOP (Small Out-line Package) for high density applications.

This package has shield effect to cut off ambient light.

FEATURES

• AC input response

• High current transfer ratio (CTR = 2 000 % TYP.)

• High isolation voltage (BV = 3 750 Vr.m.s.)

• Small and thin (SOP) package

• High-speed switching (tr, tf = 200

s TYP.)

• Ordering number of taping product: PS2706-1F3, F4

• UL approved: File No. E72422 (S)

• VDE0884 approved (Option)

APPLICATIONS

•Hybrid IC

• Telephone, Exchange equipment

• FA/OA equipment

• Programmable logic controllers

ORDERING INFORMATION

Part Number Package Safety Standard A pproval

Standard specification produc tsPS2706-1 4-pin SOP

• UL approved

PS2706-1-V 4-pin SOP VDE0884 specification produc ts (Opti on)

Data Sheet PN10244EJ01V0DS

PS2706-1

PACKAGE DIMENSIONS (in millimeters)

PS2706-1

4.0±0.5

7.0±0.3

4.4

0.5±0.3

0.15

+0.10

–0.05

2.0

0.1±0.1

2.1±0.2

2.54

0.4

+0.10

–0.05

0.25 M

TOP VIEW

1. Anode,Cathode

2. Cathode,Anode

3. Emitter

4. Collector

Data Sheet PN10244EJ01V0DS 3

PS2706-1

ABSOLUTE MAXIMUM RATINGS (TA = 25 °

°°

°C, unless otherwise specified)

Parameter Symbol Ratings Unit

Diode Forward Current (DC) IF±50 mA

Power Dissipati on Derating

∆

PD/°C0.8mW/

°C

Power Dissipati on PD80 mW

Peak Forward Current*1 IFP ±1A

Transistor Collector to Emitter Voltage VCEO 40 V

Emitter to Collector Voltage VECO 6V

Collector Current IC200 mA

Power Dissipati on Derating

∆

PC/°C1.5mW/

°C

Power Dissipati on PC150 mW

Isolat i on Voltage*2 B V 3 750 Vr.m. s .

Operating Am bi ent Tem perature TA–55 to +100 °C

Storage Temperat ure Tstg –55 to +150 °C

*1 PW = 100

s, Duty Cycle = 1 %

*2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output

Data Sheet PN10244EJ01V0DS

PS2706-1

ELECTRICAL CHARACTERISTICS (TA = 25 °

°°

°C)

Parameter Symbol Conditions MIN. TYP. MAX. Unit

Diode Forward Voltage VFIF = ±5 mA 1.1 1.4 V

Terminal Capaci tance CtV = 0 V, f = 1 MHz 60 pF

Transistor Collector to Emitter Dark

Current ICEO IF = 0 mA, VCE = 40 V 400 nA

Coupled Current Transf er Ratio

(IC/IF)CTR IF = ±1 mA, VCE = 2 V 200 2 000 %

CTR Ratio*1 CTR1/

CTR2 IF = ±1 mA, V CE = 2 V 0.3 1.0 3.0

Collecto r Sa tu r a tio n

Voltage VCE (sat) IF = ±1 mA, I C = 2 mA 1.0 V

Isolat i on Resist ance RI-O VI-O = 1 kVDC 1011 Ω

Isolat i on Capacitanc e CI-O V = 0 V, f = 1 M Hz 0.4 pF

Rise Time *2 trVCC = 5 V, I C = 2 mA, RL = 100 Ω200

Fall Time *2 tf200

*1 CTR1 = IC1/IF1, CTR2 = IC2/IF2

*2 Test circuit for switching time

PW = 1 ms,

Duty cycle = 1/10

Pulse input V

OUT

= 100 Ω50 Ω

Input monitor

Data Sheet PN10244EJ01V0DS 5

PS2706-1

TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified)

100

25 50 75 100

Ambient Temperature T

(˚C)

Diode Power Dissipation P

(mW)

DIODE POWER DISSIPATION vs.

AMBIENT TEMPERATURE 200

150

100

025 50 75 100

Ambient Temperature T

(˚C)

Transistor Power Dissipation P

(mW)

TRANSISTOR POWER DISSIPATION vs.

AMBIENT TEMPERATURE

1.5 mW/˚C

50 000

1 000

5 000

100

10 000

500

–60 0 40 80–40 –20 20 60 100

Ambient Temperature T

(˚C)

COLLECTOR TO EMITTER DARK

CURRENT vs. AMBIENT TEMPERATURE

Collector to Emitter Dark Current I

CEO

(nA)

= 40 V

24 V

10 V

5 V

2 V

100

0.1

0.01

0.6 1.0 1.4 1.60.8 1.2

Forward Voltage V

(V)

Forward Current I

(mA)

FORWARD CURRENT vs.

FORWARD VOLTAGE

+25 ˚C

0 ˚C

–25 ˚C

–55 ˚C

= +100 ˚C

+75 ˚C

+50 ˚C

300

0.1

0.3

100

0.6 1.2 1.6

0.4 0.8 1.4

1.0

Collector Saturation Voltage V

CE (sat)

(V)

Collector Current I

(mA)

COLLECTOR CURRENT vs.

COLLECTOR SATURATION VOLTAGE

= 10 mA

1 mA

0.5 mA

5 mA

0.2 mA

0.1 mA

FORWARD CURRENT vs.

FORWARD VOLTAGE

Forward Voltage V

(V)

Forward Current I

(mA)

–40

–60

–80

–20

–1.2 0 0.4 1.2 1.6–1.6 –0.8 –0.4 0.8

Data Sheet PN10244EJ01V0DS

PS2706-1

1.2

0.6

0.0

0.8

1.0

0.4

0.2

025 50 100

–50 –25 75

Ambient Temperature TA (˚C)

NORMALIZED CURRENT TRANSFER

RATIO vs. AMBIENT TEMPERATURE

Normalized Current Transfer Ratio CTR

Normalized to 1.0

at TA = 25 ˚C,

IF = 1 mA, VCE = 2 V

,,,,,,,,,,,,,,,

Forward Current IF ( A)

Current Transfer Ratio CTR (%)

CURRENT TRANSFER RATIO vs.

FORWARD CURRENT

Forward Current IF (mA)

Current Transfer Ratio CTR (%)

CURRENT TRANSFER RATIO vs.

FORWARD CURRENT

1 000

500

100

50 500 5 k

100 1 k

Load Resistance RL (Ω)

SWITCHING TIME vs.

LOAD RESISTANCE

Switching Time t ( s)

VCC = 5 V, IC = 2 mA,

CTR = 2 200 %

trtd

5 000

500

1 000

100

50 500 5 k1 k 10 k 50 k100

Load Resistance RL (Ω)

SWITCHING TIME vs.

LOAD RESISTANCE

Switching Time t ( s)

IF = 1 mA, VCC = 5 V,

CTR = 2 200 % tf

180

140

120

100

160

61024 8

Collector to Emitter Voltage VCE (V)

Collector Current IC (mA)

COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE

IF = 5 mA

0.5 mA

1 mA

2 mA

500

1 000

1 500

2 000

2 500

3 000

50 100 300

VCE = 2 V

1 000

2 000

3 000

4 000

5 000

6 000

7 000

8 000

9 000

10 000

10150.5

VCE = 2 V

Data Sheet PN10244EJ01V0DS 7

PS2706-1

1.2

1.0

0.0

0.4

0.2

0.8

0.6

110

Time (Hr)

LONG TERM CTR DEGRADATION

CTR (Relative Value)

= 1 mA, T

= 60 ˚C

= 1 mA, T

= 25 ˚C

–10

–20

–5

–15

100

0.5 10.1 5 10 50

Frequency f (kHz)

Normalized Gain G

FREQUENCY RESPONSE

= 1 mA,

= 2 V

= 100 Ω

Remark The graphs indicate nominal characteristics.

Data Sheet PN10244EJ01V0DS

PS2706-1

TAPING SPECIFICATIONS (in millimeters)

Tape Direciton

Outline and Dimensions (Reel)

Packing: 3 500 pcs/reel

2.0±0.5

R 1.0

13.0±0.2

21.0±0.8

330±2.0

100±1.0

2.0±0.5

11.9 to 15.4

Outer edge of

flange

17.5±1.0

13.5±1.0

13.0±0.2

PS2706-1-F3 PS2706-1-F4

1.55±0.1

2.0±0.05

4.0±0.1

1.75±0.1

4.6±0.1

2.9 MAX.

0.3

8.0±0.1

Outine and Dimensions (Tape)

2.4±0.1

1.5+0.1

–0

7.4±0.1

5.5±0.05

12.0±0.2

Data Sheet PN10244EJ01V0DS 9

PS2706-1

NOTES ON HANDLING

1. Recommended soldering conditions

(1) Infrared reflow soldering

• Peak reflow temperature 260°C or below (package surface temperature)

• Time of peak reflow temperature 10 seconds or less

• Time of temperature higher than 220°C 60 seconds or less

• Time to preheat temperature from 120 to 180°C 120±30 s

• Number of reflows Three

• Flux Rosin flux containing small amount of chlorine (The flux with a

maximum chlorine content of 0.2 Wt% is recommended.)

120±30 s

(preheating)

220˚C

180˚C

Package Surface Temperature T (˚C)

Time (s)

Recommended Temperature Profile of Infrared Reflow

(heating)

to 10 s

to 60 s

260˚C MAX.

120˚C

(2) Wave soldering

• Temperature 260°C or below (molten solder temperature)

• Time 10 seconds or less

• Preheating conditions 120°C or below (package surface temperature)

• Number of times One (Allowed to be dipped in solder including plastic mold portion.)

• Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine

content of 0.2 Wt% is recommended.)

(3) Cautions

•Fluxes

Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.

2. Cautions regarding noise

Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between

collector-emitters at startup, the output side may enter the on state, even if the voltage is within the absolute

maximum ratings.

Data Sheet PN10244EJ01V0DS

PS2706-1

USAGE CAUTIONS

1. Protect against static electricity when handling.

2. Avoid storage at a high temperature and high humidity.

Data Sheet PN10244EJ01V0DS 11

PS2706-1

SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884)

Parameter Symbol Speck Unit

Applic at i on class i ficat i on (DIN VDE 0109)

for rated li ne v ol tages ≤ 300 Vr. m.s.

for rated li ne v ol tages ≤ 600 Vr. m.s. IV

III

Climati c test clas s (DIN IE C 68 Tei l 1/09.80) 55/100/21

Dielect ri c strength

maximum operating isolation voltage

Test v ol t age (partial dis charge test, procedure a for type test and random test)

Upr = 1.2 × UIORM, Pd < 5 pC

UIORM

Upr

710

850 Vpeak

Vpeak

Test v ol t age (partial dis charge test, procedure b for all devi ces test)

Upr = 1.6 × UIORM, Pd < 5 pC Upr 1 140 Vpeak

Highest perm i ssible overvolt age UTR 6 000 Vpeak

Degree of pollut i on (DI N V DE 0109) 2

Clearance dis tance > 5mm

Creepage distance > 5mm

Comparativ e tracki ng i ndex (DIN IE C 112/ VDE 0303 part 1) CTI 175

Material group (DIN VDE 0109) III a

Storage tem perature range Tstg −55 to +150 °C

Operating tem perat ure range TA–55 to +100 °C

Isolat i on resist ance, mi ni m um value

VIO = 500 V dc at T A = 25 °C

VIO = 500 V dc at T A M AX. at l east 100 °CRis MIN.

Ris MIN. 1012

1011 Ω

Ω

Safety maxi m um ratings (maximum perm i ssibl e i n c ase of faul t, see thermal

derating curve)

Package temperature

Current (input c urrent IF, Psi = 0)

Power (output or total power dissipat i on)

Isolat i on resist ance

VIO = 500 V dc at T A = 175 °C (T si)

Tsi

Isi

Psi

Ris MIN.

150

200

300

109

°C

Ω

Data Sheet PN10244EJ01V0DS

PS2706-1

M8E 00. 4 - 0110

The information in this document is current as of February, 2003. The information is subject to

change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or

data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all

products and/or types are available in every country. Please check with an NEC sales representative

for availability and additional information.

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0302

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For further information, please contact

PS2706-1

SAFETY INFORMATION ON THIS PRODUCT

Caution GaAs Products The product cont ains gallium arsenide, GaA s.

GaAs vapor and powder are hazardous to human health if inhaled or inges ted.

• Do not destroy or burn the product.

• Do not cut or cleave of f any part of the product .

• Do not crush or chemic al l y di ssolve the product .

• Do not put the product in t he m outh.

Follow related l aws and ordinances for dispos al . The product should be exc l uded from general

industri al was te or household garbage.