MITSUBISHI Nch POWER MOSFET FS1AS-18A HIGH-SPEED SWITCHING USE FS1AS-18A OUTLINE DRAWING Dimensions in mm 2.3 2.3 10MAX. 2.3MIN. 0.9MAX. 1.0MAX. 5.5 0.2 4 1.0 0.5 0.1 1.5 0.2 6.5 5.0 0.2 0.5 0.2 2.3 0.8 1 2 3 wr q w e r q VDSS ................................................................................ 900V rDS (ON) (MAX) .............................................................. 15.0 ID ............................................................................................ 1A GATE DRAIN SOURCE DRAIN e MP-3 APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM PD Tch Tstg -- (Tc = 25C) Parameter Conditions Drain-source voltage VGS = 0V Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature VDS = 0V Storage temperature Weight Typical value Ratings Unit 900 30 V V 1 3 55 A A W -55 ~ +150 -55 ~ +150 0.26 C C g Feb.1999 MITSUBISHI Nch POWER MOSFET FS1AS-18A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25C) Symbol Parameter V (BR) DSS Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current ID = 1mA, VGS = 0V IGS = 100A, VDS = 0V VGS = 25V, VDS = 0V VDS = 900V, VGS = 0V Gate-source threshold voltage Drain-source on-state resistance ID = 1mA, VDS = 10V ID = 0.5A, VGS = 10V ID = 0.5A, VGS = 10V ID = 0.5A, VDS = 10V V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Drain-source on-state voltage Forward transfer admittance Input capacitance Coss Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Crss td (on) tr td (off) tf VSD Rth (ch-c) Limits Test conditions VDS = 25V, VGS = 0V, f = 1MHz VDD = 200V, ID = 0.5A, VGS = 10V, RGEN = RGS = 50 Turn-off delay time Fall time Source-drain voltage IS = 0.5A, VGS = 0V Channel to case Thermal resistance Unit Min. Typ. Max. 900 30 -- -- -- -- -- -- 10 V V A -- 2 -- -- -- 3 11.5 5.75 1 4 15.0 7.50 mA V V 0.6 -- -- -- 1.0 270 26 4 -- -- -- -- S pF pF pF -- -- -- -- 9 12 35 30 -- -- -- -- ns ns ns ns -- 1.0 1.5 V -- -- 2.27 C/W PERFORMANCE CURVES DRAIN CURRENT ID (A) 80 60 40 20 0 0 50 100 150 101 7 5 3 2 100 7 5 3 2 tw = 100ms 1ms 10ms 100ms DC 10-1 7 5 3 2 TC = 25C Single Pulse 10-2 0 10 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 200 CASE TEMPERATURE TC (C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) VGS = 20V 10V @ VGS = 20V 2.0 1.0 10V TC = 25C Pulse Test DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 1.6 5V 1.2 PD = 55W 0.8 4.5V 0.4 DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 100 5V 0.8 0.6 4.5V 0.4 0.2 4V 4V 0 0 10 20 30 40 50 DRAIN-SOURCE VOLTAGE VDS (V) TC = 25C Pulse Test 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS1AS-18A HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) ID = 2A 30 20 1A 10 0.5A 0 4 8 12 VGS = 10V 20V 12 8 4 0 10-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 20 TRANSFER CHARACTERISTICS (TYPICAL) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 101 7 5 TC = 25C VDS = 50V Pulse Test FORWARD TRANSFER ADMITTANCE yfs (S) 1.2 0.8 0.4 VDS = 10V Pulse Test 3 2 TC = 25C 100 7 5 75C 125C 3 2 0 4 8 12 16 10-1 -1 10 20 2 3 5 7 100 2 3 5 7 101 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 3 2 3 Tch = 25C VDD = 200V VGS = 10V RGEN = RGS = 50 2 Ciss 102 7 5 3 2 Coss 101 7 5 Tch = 25C 3 2 f = 1MHZ Crss VGS = 0V 100 16 DRAIN CURRENT ID (A) 1.6 0 TC = 25C Pulse Test GATE-SOURCE VOLTAGE VGS (V) 2.0 DRAIN CURRENT ID (A) 16 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) () 40 0 CAPACITANCE Ciss, Coss, Crss (pF) 20 TC = 25C Pulse Test 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 DRAIN-SOURCE VOLTAGE VDS (V) SWITCHING TIME (ns) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 50 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 102 7 5 3 td(off) 2 tf tr td(on) 101 7 5 3 10-1 2 3 5 7 100 2 3 5 7 101 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS1AS-18A HIGH-SPEED SWITCHING USE 20 SOURCE CURRENT IS (A) 12 VDS = 250V 400V 600V 8 4 0 4 8 12 16 3 2 75C 1 0 25C 0 0.8 1.6 2.4 3.2 4.0 SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 VGS = 10V ID = 1/2ID Pulse Test 3 2 100 7 5 3 2 -50 0 50 100 3.0 2.0 1.0 0 150 BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) VDS = 10V ID = 1mA 4.0 CHANNEL TEMPERATURE Tch (C) 0.4 TC = 125C GATE CHARGE Qg (nC) 101 7 5 10-1 VGS = 0V Pulse Test 4 20 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) 5 Tch = 25C ID = 1A 16 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (C/W) GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 D = 1.0 2 0.5 100 0.2 7 5 0.1 3 2 10-1 7 5 3 2 0.05 0.02 0.01 Single Pulse 10-2 -4 10 2 3 5710-3 2 3 5710-22 3 5710-12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999