Government/ Space Products Products From IR Life, Power-Age, Environmental and Military Testing Capabilities USA MIL-S-19500 Qualified Life Tests and Power-Age Capabilities A. High temperature storage life testing up to 200C. B. Voltage temperature stress tests at both ambient and elevated conditions. C. Free air operation life. Test capability, 1000 positions for power transistors, and 1500 positions for power diodes. diodes, SCRs and Schottkys. E. Computerized readout equipment. levets. Environmental Test Capabilities TEST CAPABILITY Acceleration, Sustained Centrituge Altitude (Barometric Pressure, Reduced) Moisture Resistance Salt Atmosphere/Spray Seal-Gross, Fine Leak Shock (Mechanical) Solderability Temperature Cycling Terminal Strength (Lead Integrity) Thermal Shock Vibration, Fatique Vibration, Variable Symbolization (Resistance to Solvents) 50-30,000g (Standard) 450,000 Ft. Simulated Altitude at Ta = 25C 25-85C 85% RH 25C to 71C, up ta 20% Salt Solution by Weight 1 x 10-8 atm ce/sec, Fluorocarbons, Mineral Oils, FC-43, Hydrostatic Pressure: 0-100 psig Permanent Marking Pulse Shape Approximately Half-sine 00-1500g at 0.5-1.0 msec Up to 260C ~ 68C to 200C Lead Fatigue, Tension, Stud Torque, Terminal Torque - 65C to 200C 5-20g Fixed Frequency 5-2000 Hz as Limited by 1 inch DA and 60 inches/second Velocity; 0-20g (Standard) Military Test Standard Capabilities Salt Atmosphere Seal, Gross Leak Seal, Fine Leak Solderability Soldering Heat Temperature Cycling Terminal Strength Terminal Shock (Glass Strain) Acceleration, Sustained (Centrifuge) Shock (Mechanical) Vibration, Fatigue Vibration, Variable Frequency PIND Power Cycling TEST CATEGORY MIL-STD-202 MIL-STD-750 Barometric Pressure (reduced) Method 105, All Conditions Method 1001, All Conditions Moisture Resistance Method 106 Method 1021 Resistance to Solvents Method 215 Method 1022 Method 101, All Conditions Method 112B, Conditions A, B & D Only Method 112B, Condition C Procedure IIIA Method 208 Method 210, All Conditions Mathod 102, All Conditions Mathod 211, Ail Conditions Mathod 107, All Conditions Method 1041, Method 1046 Method 1071, Conditions C, D & F Method 1071, Condition H Method 2026 Method 2031 Method 1051, All Conditions Method 2036, All Conditions Method 1056, All Conditions Method 212, All Conditions Method 2006 Method 213, Conditions D, E & F Method 2016 Method 201 Method 2046 Method 204 Method 2056 _ Method 2052 - Method 1042 292 DO. HTRB test capabilities over 25,000 positions for Vgg and for Vpg burn-in for HEXFETs, and more than 2000 positions for F. Intermittent operating life tests at various cycles and powerGovernment/ Space Products Products From IR Life, Power-Age, Environmental and Military Testing Capabilities Europe Life Test and Power-Age Capabilities High temperature storage life testing up to 200C. Voltage temperature stress tests at both ambient and elevated conditions. HTRB test capabilities over 5000 positions for Vg@g and for Vpg burn-in for HEXFETs. Computerized measurement and readout equipment. Intermittent operating life tests at various cycles and power levels. moom> Environmental Test Capabilities TEST Acceleration, Sustained Centrifuge Altitude (Barometric Pressure Reduced Moisture Resistance Seal-Gross, Fine Leak 50 to 30,000g (Standard) 450,000 Ft. Simulated Altitude at Ta = 25C 25C to 85C, 85% Relative Humidity 1x 108 atm cc/sec, Fluorocarbons, Mineral Oils, FC-43, Hydrostatic Pressure: 0 to 100 psig Symbolisation (Resistance to Solvents) Permanent Marking Solderability Up to 250C Temperature Cycling ~65C to 200C Terminal Strength (Lead integrity) Lead Fatigue, Tension, Stud Torque, Terminal Torque Thermal Shock -85C to 200C Military Test Standard Capabilities TEST CATEGORY MIL-STD-750 / ESA/SCC CECC 50,000 Barometric Pressure (reduced) Method 1001 _ Moisture Resistance Method 1021 4.4.2 Resistance to Solvents Method 1022 4.2.3 Seal, Gross Leak Method 1071, Conditions C, D & F 4.4.10 Qe Seal, Fine Leak Method 1071, Condition H 4.4.10 Qc Solderability Method 2026 4.4.7 Soldering Heat Method 2031 4.4.8 Temperature Cycling Method 1051, All Conditions 4.4.4 Na Terminal Strength Terminal Shock (Glass Strain) Acceleration, Sustained (Centrifuge) PIND Power Cycling Method 2036, All Conditions Method 1056, All Conditions Method 2006 Method 2052 Method 1042 4.4.9, All Conditions 4.4.9, All Conditions 4.4.11 293Government/ Space Products HEXFET, Mil-Qualified Products From IR T039/HEXFET/N-Channel Current Part Numbers Hextet Cross Te = 25C JEDEC JANTX JANTXV Reference | Voltage (A) MIL-S-19500 | Qualification Case Style 2N6782 | JANTX2N6782 | JANTXV2N6782 IRFF110 100V 3.5 /556 19500-1262-83 | TO-205AF 2N6784 | JANTX2N6784 | JANTXV2N6784 IRFF210 200V 2.25 /556 19500-1262-83 | 19.39 2N6786 | JANTX2N6786 | JANTXV2N6786 IRFF310 400V 1.25 /556 19500-1262-83 2N6788 | JANTX2N6788 | JANTXV2NG788 IRFF120 100V 6.0 /555 19500-1263-83 2N6790 | JANTX2N6790 | JANTXV2N6790 IRFF220 200V 3.5 1555 19500-1263-83 2N6792 | JANTX2N6792 | JANTXV2N6792 IRFF320 400V 2.0 1555 19500-1263-83 2N6794 | JANTX2N6794 | JANTXV2N6794 IRFF420 500V 15 1555 19500-1263-83 2N6796 | JANTX2N6796 | JANTXV2N6796 IRFF130 100V 8.0 {557 19500-1263-83 2N6798 =| JANTX2N6798 | JANTXV2N6798 (RFF230 200V 55 1557 19500-1261-83 2N6800 | JANTX2N6800 | JANTXV2N6800 IRFF330 400V 3.0 1557 19500-1261-83 2N6802 | JANTX2N6B02 | JANTXV2N6802 IRFF430 500V 2.5 1557 19500-1261-83 T039/HEXFET/P-Channel 2N6845 | JANTX2N6845 | JANTXV2N6845 IRFF9120 -100V 4.0 1563 19500-1094-86 2N6847 | JANTX2N6847 | JANTXV2N6847 IRFF9220 ~200V -2.5 1563 19500-1094-86 2N6849 | JANTX2N6849 | JANTXV2N6849 IRFF9130 -100V -6.5 {564 19500-1093-86 2N6851 | JANTX2N6851 | JANTXV2N6851 |RFF9230 -200V -4.0 1564 19500-1093-86 TO3/HEXFET/N-Channel 2N6756 | JANTX2N6756 | JANTXV2N6756 IRF130 100V 14.0 1542 19500-488-81 | T0-204AA 2N6758 | JANTX2N6758 | JANTXV2N6758 IRF230 200V 9.0 1542 19500-488-81 | TQ.3 2N6760 | JANTX2N6760 | JANTXV2N6760 IRF330 400V 5.5 1542 19500-488-81 2N6762 | JANTX2N6762 | JANTXV2N6762 IRF430 500V 4.5 1542 19500-489-81 2N6764 | JANTX2N6764 | JANTXV2N6764 IRF150 100V 38.0 1543 19500-490-81 2N6766 | JANTX2N6766 | JANTXV2N6766 IRF250 200V 30.0 1543 19500-490-81 2N6768 | JANTX2N6768 | JANTXV2N6768 IRF350 400V 14.0 1543 19500-960-82 2N6770 | JANTX2N6770 | JANTXV2N6770 IRF450 500V 12.0 1543 19500-960-82 T03/HEXFET/P-Channel 2N6804 | JANTX2NG804 | JANTXV2N6804 IRF9130 -100V -12.0 /562 19500-811-86 2N6806 | JANTX2NG806 | JANTXV2N6806 IRF9230 ~200V -6.5 1562 19500-811-86 T0254/HEXFET/N-Channel 2N7218 | JANTX2N7218 | JANTXV2N7218 IRFM140 100V 28.0 /596 19500-703-91 | 70-254AA 2N7219 | JANTX2N7219 | JANTXV2N7219 IRFM240 200V 18.0 /596 19500-703-91 | M-PAK (1) 2N7221 | JANTX2N7221 | JANTXV2N7221 IRFM340 400V 10.0 1596 19500-703-91 2N7222 | JANTX2N7222 | JANTXV2N7222 IRFM440 500V 8.0 /596 19500-703-91 2N7224 =| JANTX2N7224 | JANTXV2N7224 IRFM150 100V 34.0 /592 19500-703-91 2N7225 | JANTX2N7225 | JANTXV2N7225 IRFM250 200V 27.4 1592 19500-703-91 2N7227 | JANTX2N7227 | JANTXV2N7227 IRFM350 400V 14.0 1592 19500-703-91 2N7228 | JANTX2N7228 | JANTXV2N7228 IRFM450 500V 12.0 1592 19500-705-91 T0254/HEXFET/P-Channel 2N7236 | JANTX2N7236 | JANTXV2N7236 IRFM9140 ~100V -18.0 1595 19500-503-91 2N7237 | JANTX2N7237 | JANTXV2N7237 IRFM9240 -200V -11.0 1595 19500-503-91 (1) PACKAGES CONTAINING BERYLLIA SHALL NOT BE GROUND, SANDBLASTED, MACHINED, OR HAVE OTHER OPERATIONS PERFORMED ON THEM WHICH WILL PRODUCE BERYLLIA OR BERYLLIUM DUST. FURTHERMORE, BERYLLIUM OXIDE PACKAGES SHALL NOT BE PLACED IN ACIDS THAT WILL PRODUCE FUMES CONTAINING BERYLLIUM. 294Products From IR Government/ Space Products Schottky Diodes MiL-Qualified DO4 & DO05/Schottky Industrial | Military Part Numbers Current | Current Voltage Rating Rating JEDEC JAN JANTX JANTXV 1) (A) (A) MIL-S-19500 | Qualification Case Style DO4 1N6391 | JANIN6391 | JANTX1N6391 | JANTXV1N6391 45 25 25 1553 19500-647-83 DoS 1N6392 | JANIN6392 | JANTX1N6392 | JANTXVIN6392 45 60 60 1554 19500-648-83 295Government/ Products From IR Space Products HEXFET, CECC Qualified Europe T03/HEXFET/N-Channel Level of Quality Basic Vos Rps(on) CECC Issue Issue Assessment and CECC Case Type ) (Ohms) Specification No. Date 50 000 Screen Level Options Outline IRFO44 60 0.028 50 012-056 1 6/91 E-,EA,EB,EC,ED TO-204AA IRF120 100 0.30 50 012-012 2 6/83 E-,EA,EB,EC,ED T0-3 IRF130 100 0.18 50 012-013 2 6/83 E-,EA,EB,EC,ED IRF140 100 0.077 50 012-056 1 6/91 E-,EA,EB,EC,ED IRF150 100 0.055 50 012-014 2 6/83 E-,EA,EB,EC,ED IRF220 200 0.80 50 012-102 2 6/83 E-,EA,EB,EC,ED IRF230 200 0.40 50 012-013 2 6/83 E-,EA,EB,EC,ED (RF240 200 0.18 50 012-056 1 6/91 E-,EA,EB,EC,ED IRF250 200 0.085 50 012-014 2 6/83 E-,EA,EB,EC,ED IRF330 400 1.00 50 012-013 2 6/83 -,EA,EB,EC,E iRF340, 400 0.40 50 012-013 1 6/91 E-,EA,EB,EC,ED IRF350 400 0.30 50 012-014 2 6/83 E-,EA,EB,EC,ED IRF430 500 1.50 50 012-012 2 6/83 E-,EA,EB,EC,ED IRF440 500 0.85 50 012-056 1 6/91 E-,EA,EB,EC,ED IRF450 500 0.40 50 012-014 2 6/83 E-,EA,EB,C,ED T03/HEXFET/P-Channel IRF9130 -100 0.30 50 012-015 2 6/83 E.,EA,EB,C,ED (RF9140 -100 0.20 50 012-057 1 6/83 E-,EA,EB,EC,ED tRF9230 -200 0.80 50 012-015 1 1/91 E-,EA,EB,EC,ED IRF9240 -200 0.50 50 012-057 1 6/83 E-,EA,EB,EC,ED T039/HEXFET/N-Channel 2N6782 100 0.60 50 012-027 E-,EA,EB,EC,E0 2N6788 100 0.30 50 012-028 E-,EA,EB,EC,ED 2N6796 100 0.18 50 012-029 E-,EA,EB,EC,E0 2N6790 200 0.80 50 012-028 1 3/85 E-,EA,EB,EC,ED 2N6798 200 0.40 50 012-029 E-,EA,EB,EC,ED 2N6800 400 4.00 50 012-029 E-,EA,EB,EC,E T039/HEXFET/P-Channel 2N6845 -100 0.60 50 012-036 E-,EA,EB,EC,ED 2N6849 -100 0.30 50 012-037 1 6/91 E-,EA,EB,EC,ED 2N6847 -200 1.50 50 012-036 E-,EA,EB,EC,ED 2N6851 -200 0.80 50 012-037 E-,EA,EB,EC,ED T0257/HEXFET/N-Channel IRFY044(M 60 0.03 50 012-062 E-,EA,EB,EC,ED . IRFY120(M 100 0.31 50 012-060 E-,EA,EB,EC,ED VO-257AA IRFY130(M) 100 0.19 50 012-061 E-,EA,EB,EC,ED IRFY140(M) 100 0.092 50 012-062 E-,EA,EB,EC,ED IRFY240(M) 200 0.19 50 012-062 1 10/91 E-,EA,EB,EC,ED tRFY340(M) 400 0.55 50 012-062 E-,EA,EB,EC,ED IRFY430(M) 500 1.50 50 012-061 E-,EA,EB,EC,ED IRFY440(M) 500 0.85 50 012-062 E-,EA,EB,EC,ED T0257/HEXFET/P-Channel IRFY9120(M) -100 0.60 50 012-063 E-,EA,EB,EC,ED IRFY9130(M) -100 0.31 50 012-064 1 10/91 E-,A,B,EC,ED IRFY9140(M) -100 0.21 50 012-065 E-,EA,EB,EC,ED (RFY9240(M) -200 0.50 50 012-065 E-,EA,EB,EC,ED 296Products From IR Government/ Space Products HEXFET, ESA/SCC Qualified Europe T03/HEXFET/N-Channel Basic Vos Aps(on) ESA/SCC Test Issue Issue Type ) (Ohms) Specification Variant Level No. Date Outline 2N6764 100 0.055 5205/013 01 BC T0-204AA 2N6766 200 085 5205/013 -02 BC 2A 3/85 (T0-3) 2N6768 400 0.30 5205/013 03 B.C TO3/HEXFET/P-Channel 2N6804 -100 0.30 5206/004 01 BC 1A 12/85 2N6806 -200 0.80 5206/004 02 B.C 1A T039/HEXFET/N-Channel 2N6796 100 0.18 5205/019 01 B.C 1A 12/85 T0-205AF 2N6782 100 0.60 5205/014 O11 B.C 4A 3/84 (10-39) 2N6798 200 0.40 5205/019 03 B.C 1A 12/85 IRFF210 200 1.50 205/014 - : - Pending 2N6800 400 1.00 5205/019 05 B.C 1A 12/85 IRFF310 400 3.60 5205/014 - - - Pending 2N6802 500 1.50 5205/019 07 B.C 1A 12/85 T039/HEXFET/P-Channel 2N6B49 -100 0.30 5206/003 | 01 | B.C | 1 | 12/85 2N6851 -200 0.80 5206/003 -02 BC 1 TO ORDER SPECIFY BASIC TYPE, SPECIFICATION, VARIANT,LOT A E.G. 2N6764, SCC520S/013.018, ISSUE N:2 DATED 3/88. HEXFET, DEF STAN 59/61 Part 80 Tested Europe T0220/HEXFET/N-Channel Basic Vos Rpsion) Type ) (Ohms) IA Document Option Outline IRFZ14 0.20 : a IRFZ24 60 0.10 - TO-220A6 IRFZ34 0.05 - IRFZ44 0.028 - IRF510 0.54 E2957 IRF520 100 0.27 2958 IRF530 0.16 E2959 IRF540 0.077 E2960 IRF610 1,50 E2957 IRF620 200 0.80 2958 F.FX IRF630 0.40 2959 IRF640 0.18 2960 IRF614 2.00 IRF624 250 1.10 IRF634 0.45 IRF644 0.28 IRF710 3.60 E2957 IRF720 400 1.80 E2958 (RF730 1.00 E2959 IRF740 0.55 2960 IRF820 3.00 E2958 IRF830 500 1.50 2959 IRF840 0.85 2960 T0220/HEXFET/P-Channel IRF9Z14 0.50 IRF9Z24 -60 0.28 IRF9Z34 0.14 IRF9510 1.20 : F.FX IRF9520 -100 0.60 E2961 IRF9530 0.30 E2962 IRF9540 0.20 - IRF9610 3.00 : IRF9620 -200 1.50 E2961 IRF9630 0.80 E2962 IRF9640 0.50 : 297Government/ Products From IR Space Products HEXFET High Reliability T039/HEXFET Logic Level/N-Channel Vps Drain Rpsion) Ip Continuous lom Pulse Pp Max Source On-State Drain Current Drain Power Part Voltage Resistance 25C Case Current Dissipation Number (Volts) (Ohms) (Amps) (Amps) (Watts) Case Style IRLF110 100 0.60 35 4 15 TO-205AF IRLF120 0.35 53 21 20 TO0-39 IRLF130 0.20 8 33 25 LCC/SMD/HEXFET/N-Channel IRFEO24 60 0.15 74 30 14 LCC IRFE110 100 0.60 31 12 abl IRFE120 100 0.30 48 19 14 IRFE130 100 0.18 74 30 22 IRFE210 200 4.50 18 7.2 n IRFE220 200 0.80 28 H 14 < IRFE230 200 0.40 48 19 22 t7 i IRFE310 400 3.60 1.2 48 11, : IRFE320 400 1.80 18 7.2 14 IRFE330 400 1.00 3.0 12 22 IRFE420 00 3.00 1.4 56 14 IRFE430 500 1.50 25 10 22 IRFNO44 60 0.40 34 136 75 SMD-1 IRFNO54 60 0.027 45 180 100 IRFN140 100 0.10 22 88 75 IRFN150 100 0.073 7 108 400 IRFN240 200 0.18 14 56 75 IRFN250 200 0.10 22 88 100 IRFN340 400 0.55 8 32 75 IRFN350 400 0.315 "1 44 100 IRFN440 500 0.89 6 24 75 IRFN450 500 0.42 10.4 4 100 IRFNG40 1000 3.50 3 42 75 IRFNG5O 1000 2.00 45 18 100 LCC/SMD/HEXFET/P-Channel IRFE9024 -60 0.28 54 -22 14 IRFE9110 -100 1.20 -2.2 -88 a8] IRFE9120 -100 0.60 35 14 14 IRFE9130 -100 0.30 65 -25 22 IRFE9210 -200 3.00 13 5.2 11 IRFE9220 -200 1.50 -2.1 -8.4 14 IRFE9230 -200 0.80 -36 14 22 IRFN9140 -100 0.20 17 -68 75 IRFN9240 -200 051 8 -32 15 298Products From IR HEXFET High Reliability TO66/HEXFET/N-Channel Not For Future Designs Government/ Space Products Vps Drain Rpsion) Ip Continuous Ibm Pulse Pp Max Source On-State Drain Current Drain Power Part Voltage Resistance 25C Case Current Dissipation Number (Valts) (Ohms) (Amps) (Amps) (Watts) Case Style IRFJ120 100 03 8 32 40 T0-213AA IRFJ130 0.18 12 40 50 TO-66 IRFJ140 0.085 15 60 70 IRFJ220 200 08 5 20 40 IRFJ230 04 8 32 50 IRFJ240 0.18 13 2 70 IRFI320 400 18 3 12 40 IRFJ330 1.0 45 18 50 IRFU340 0.55 75 30 70 IRFJ420 500 30 25 10 40 IRFJ430 15 38 15 50 IRFJ440 0.85 6 24 70 TO66/HEXFET/P-Channel Not For Future Designs IRFJ9130 -100 0.31 B85 -34 50 IRFJ9140 -100 0.21 -18,0 72 70 IRFJ9230 -200 0.81 5.5 -22 50 IRFJ9240 -200 0.51 -80 -32 70 T0257/HEXFET/N-Channel IRFY120(M) 100 031 74 29,2 30 IRFY130(M) 100 0.19 10.8 43.2 45 IRFY140(M) 100 0.092 18.4 73.6 60 IRFY240(M) 200 0.19 12.4 49.6 60 IRFY340(M) 400 055 69 276 60 IRFY430(M) 500 1.50 35 14 45 (RFY440(M) $00 0.85 55 22 60 1 10257/HEXFET/P-Channel 1] 2/3 IRFY9120(M) 100 080 53 21.2 30 | ee ete 3 IRFY9130(M) 031 93 372 45 LIRFY(M) [0 |S 299Government/ Space Products HEXFET High Reliability Products From IR T0254/HEXFET/N-Channel Vps Drain Ros(on) Ip Continuous low Pulse Pp Max Source On-State Drain Current Orain Power Part Vottage Resistance 25C Case Current Dissipation Number (Volts) (Ohms) (Amps) (Amps) (Watts) Case Style IRFM044 60 0.04 25 210 150 TO-254AA IRFMO54 60 0.022 25 150 150 M-PAK (1) IRFM140 100 0.100 25 110 150 IRFM150 100 0.065 25 160 150 IRFM240 200 0.200 18 72 125 IRFM250 200 0.100 25 100 150 IRFM340 400 0.56 8.5 40 125 IRFM350 400 0.31 15 60 150 IRFM440 500 0.86 8 32 125 IRFM450 500 0.42 13 52 150 T0254/HEXFET/P-Channel IRFM9130 -100 0.31 11.5 -48 75 IRFM9140 -100 0.21 -17.3 -69 125 IRFM9230 -200 0.81 6.5 -26 75 IRFM9240 -200 0.51 10.7 -43 125 T0-258/HEXFET/N-Channel IRFV360 400 0.21 22 80 250 10-258 IRFV460 500 0.27 21 70 4 Z g S58 M0036/HEXFET/N-Channel {__IRFG110 | 100 0.8 0.95 | 4 1.4 MO-036AB M0036/HEXFET/P-Channel | __1RFG9110 | -100 1.4 0.75 L 3 1.4 MO036/HEXFET/N & P Channel IRFG5110 100 0.8 1 4 14 -100 0.8 0.95 -4 tRFG6110 100 0.8 0.95 4 -100 1. 0.95 -3.5 (1) PACKAGES CONTAINING BERYLLIA SHALL NOT BE GROUND, SANDBLASTED, MACHINED, OR HAVE OTHER OPERATIONS PERFORMED ON THEM WHICH WILL PRODUCE BERYLLIA OR BERYLLIUM DUST. FURTHERMORE, BERYLLIUM OXIDE PACKAGES SHALL NOT BE PLACED IN ACIDS THAT WILL PRODUCE FUMES CONTAINING BERYLLIUM. 300Products From IR Government/ Space Products Schottky Diodes High Reliability VFMileg lam @ IFAM) @ Te = 125C IFSM 7 = 125C & | Max. Part Vanm | @ Tc = 00C Single Pulse ated VaWM qj Number 4) Per Package ) @\tm | 10 ms Sine (mA) (C) Case Style 5EQ100 100 25 1.31 50 180 15 150 Lee 8EQ045 45 32 1.38 64 180 15 150 2260100 100 35 1.38 70 300 45 180 | TO-254AA 2560045 45 35* 1.30 70 300 45 150 M-PAK (1) 22CG0045 45 35 0.91 35 300 20 150 15CGQ100 100 35 0.96 35 300 45 150 12CG0150 150 300 20 150 a 45CKQ100 100 45 0.96 45 540 45 150 | T0-258 (1) 6OCKQ045 45 45* 0.83 45 540 45 150 15CL0100 100 40 1.01 40 180 45 150 20CL0045 45 80 1.16 80 180 20 150 (1) PACKAGES CONTAINING BERYLLIA SHALL NOT BE GROUND, SANDBLASTED, MACHINED, OR HAVE OTHER OPERATIONS PERFORMED ON THEM WHICH WILL PRODUCE BERYLLIA OR BERYLLIUM DUST. FURTHERMORE, BERYLLIUM OXIDE PACKAGES SHALL NOT BE PLACED IN ACIDS THAT WiLL PRODUCE FUMES CONTAINING BERYLLIUM. 301Government/ Products From IR Space Products Radiation Hard HEXFETs Radiation Vg Drain Rogion) \p Continuous lpm Pulse Pp Max Test Level Source On-State Drain Current Drain Power Part KRads Voltage Resistance 25C Case Current Dissipation Number (Si) (Volts) (Ohms) (Amps) (Amps) (Watts) Case Styie IRHN7054 100 60 0.027 45 180 100 SMD-1 IRHN7150 100 100 0.065 7 108 100 IRHN7250 100 200 0.11 22 88 100 IRHN7450 100 500 0.45 10.4 A 100 IRHN8054 1000 60 0.027 45 180 100 IRHN8150 1000 100 0.065 27 108 100 IRHN8250 1000 200 0.11 22 88 100 IRHN8450 1000 500 0.45 10.4 a 100 WT. 2.49 IRHE7110 100 100 0.6 3.5 14 15 LCC IRHE7130 100 100 0.18 8 32 5 o> IRHE7230 100 200 0.44 5 20 25 . <> IRHE8110 1000 100 0.6 3.5 14 15 Cine IRHE8130 1000 100 0.18 8 32 25 IRHE8230 1000 200 0.44 5 20 25 WT. 0.429 IRHG7110 100 100 0.80 0.95 4 14 M0-036AB es) t a mT! i \ WT. 1.39 ! IRHF7110 100 100 0.6 3.5 14 15 TO-205AF IRHF7130 100 100 0.18 8 32 25 TO-39 IRHF7230 100 200 0.44 5 20 25 IRHF8110 1000 100 0.6 3.5 14 15 IRHF8130 1000 100 0.18 8 32 25 IRHF8230 1000 200 0.44 5 20 25 WT. 0.98g IRHM7130 100 100 0.18 14 56 75 TO-254AA (1} 1RHM7230 100 200 0.40 9.0 36 75 IRHM7054 100 60 0.027 35 220 150 IRHM7150 100 100 0.065 34 136 150 IRHM7250 100 200 0.100 27.4 110 150 IRHM7450 100 500 0.42 12 48 150 IRHM7360 100 400 0.20 25 100 300 iRHM8130 1000 400 0.18 14 56 75 IRHM8230 1000 200 0.40 9.0 36 75 IRHM8054 1000 60 0.027 35 220 150 IRHM8150 1000 100 0.065 34 136 150 IRHM8250 1000 200 0.100 27.4 110 150 {RHM8450 1000 500 0.42 12 48 150 IRHM8360 1000 400 0.20 25 100 300 WT. 9.39 IRH7130 100 100 0.18 14 56 75 TO-204AA/AE \RH7230 100 200 0.40 9.0 36 75 T0-3 IRH7054 100 60 0.027 35 220 150 IRH7150 100 100 0.065 4 136 150 1RH7250 100 200 0.100 27.4 110 150 . 1RH7450 100 500 0.42 12 48 150 of ee IRH7360 100 400 0.20 25 100 300 or, IRH8130 1000 100 0.18 14 56 75 IRH8230 1000 200 0.40 9.0 36 75 (RH8054 1000 60 0.027 35 220 150 IRH8150 1000 100 0.065 34 136 150 IRH8250 1000 200 0.100 27.4 110 150 IRH8450 1000 500 0.42 12 48 150 WT. 11.59 * DEMONSTRATES EXCELLENT THRESHOLD VOLTAGE STABILITY AND BREAKDOWN VOLTAGE STABILITY AT TOTAL RADIATION DOSES AS HIGH AS 1 MEGARAD. * CAPABLE Of SURVIVING TRANSIENT IGNIZATION PULSES AS HIGH AS 1 x 1012 RADS (SI)/SEC. VIRTUALLY IMMUNE TO SEU. (1) PACKAGES CONTAINING BERYLLIA SHALL NOT BE GROUND. SANDBLASTED, MACHINED, OR OTHER OPERATIONS PERFORMED ON THEM WHICH WILL PRODUCE BERYLLIA OR BERYLLIUM DUST. FURTHERMORE, BERYLLIUM OXIDE PACKAGES SHALL NOT BE PLACED IN ACIDS THAT WILL PRODUCE FUMES CONTAINING BERYLLIUM. 302