2731-100MR3
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory di rect .
2731-100M
100 Watts, 36 Volts, 200µs, 10%
Radar 2700-3100 MHz
GENERAL DESCRIPTION
The 2731-100M is an internally matched, COMMON BASE bipolar transistor
capable of providing 100 Watts of pulsed RF output power at 200µs pulse
width, 10% duty factor across the 2700 to 3100 MHz band. The transistor
prematch and test fixture has been optimized through the use of 10 Ohm TRL
Analysis. This ceramic sealed transistor is specifically designed for S-band
radar applications. It utilizes gold metallization and emitter ballasting to
provide high reliability and supreme ruggedness.
CASE OUTLINE
55KS-1
Common Base
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipati on @ 25°C1 575 W
Maximum Voltage and Current
Collector to Base Voltage (BVces) 65 V
Emitter to Base Voltage (BVebo) 3.0 V
Collector Current (Ic) 15.0 A
Maximum Temperatures
Storage Tempera ture -65 to +200 °C
Operating Junction Temperature +200 °C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
Pout Power Output F=2700-3 1 00 M Hz 100 115 140 W
Pg Power Gain Pulse Width = 200 µs 8.0 8.5 9.4 dB
ηc Collector Efficiency Duty Factor = 10 % 40 %
Rl Return Loss Power Input = 16W -7 dB
Pd Pulse Droop Vcc = +36V 0.6 dB
VSWR-T Load Mismatch Tolerance F = 2700, 2900, 3100 MHz 2:1
FUNCTIONAL CHARAC TERISTICS @ 25°C
BVebo Emitter to Base Breakdown Ie = 30 mA 3.0 V
BVces Collector to Emitter Breakdown Ic = 120 mA 65 V
hFE DC – Current Gain Vce = 5V, Ic = 600 mA 15
θjc1 Thermal Resistance 0.43 °C/W
Issue March 2006
2731-100MR3
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory di rect .
2731-100M
Vcc = 36 Volts, Pulse Width = 200µs, Duty = 10 %
Pi n v s. Pout
0.0
20.0
40.0
60.0
80.0
100.0
120.0
140.0
0.0 5.0 10.0 15.0 20.0 25.0
Pin (Wa tts)
Pout (Watts)
2.7GHz
2.8GHz
2.9GHz
3.0GHz
3.1GHz
Eff ici ency vs. Frequency
30
35
40
45
50
55
2.65 2.7 2.75 2.8 2.85 2.9 2.95 3 3.05 3.1 3.15
Frequency (GHz)
Efficiency (%)
2731-100MR3
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory di rect .
Gain vs. Frequency
0
1
2
3
4
5
6
7
8
9
2.6 2.7 2.8 2.9 3 3.1 3.2
Frequency (GHz)
Gain (dB)
Impedance curves will be added at the completion of the characterization.
Impedance
Data
Freq (GHz) Zs Zl
2.7 8.87-j12.64 4.33-j4.67
2.8 8.24-j10.26 3.95-j4.94
2.9 8.54-j8.06 3.47-j5.08
3.0 9.85-j6.05 2.96-j5.06
3.1 10.26-j4.88 2.48-j4.92
2731-100MR3
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory di rect .
Circuit Component Physical Circuit Dimension
Item Description Value Item W (Mil) L (Mil)
C1 Chip Cap A size 9.1pF D1 35 210
C2 Chip Cap B size 10,000pF D2 318 158
C3 Chip Cap B size 100pF D3 58 114
C4 Electrolytic Cap 2200uF D4 500 195
R1 Chip resistor 20 ohms D5 124 161
R2 Fix resistor 1.5 ohms D6 530 156
L1 Silver ribbon L=870 Mil, W=70 Mil. D7 770 196
L2 Copper wire 21 AWG, 560 Mil D8 200 176
Material Roger-Duroid 6006 @ 25Mil, Er=6.15, 1Oz Cu D9 48 92
D10 272 119
D11 35 150
D12 35 200
2731-100MR3
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory di rect .
2731-100M
