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IRF7464
SMPS MOSFET HEXFET® Power MOSFET
lHigh frequency DC-DC converters
Benefits
Applications
lLow Gate to Drain Charge to Reduce
Switching Losses
lFully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
lFully Characterized Avalanche Voltage
and Current
VDSS RDS(on) max ID
200V 0.73Ω1.2A
Typical SMPS Topologies
l Telecom 48V input Forward Converter
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 1.2
ID @ TA = 70°C Continuous Drain Current, V GS @ 10V 1.0 A
IDM Pulsed Drain Current 10
PD @TA = 25°C Power Dissipation 2.5 W
Linear Derating Factor 0.02 W/°C
VGS Gate-to-Source Voltage ± 30 V
dv/dt Peak Diode Recovery dv/dt 6.8 V/ns
TJOperating Junction and -55 to + 150
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C
Absolute Maximum Ratings
Notes through are on page 8
PD- 93895
SO-8
Top View
8
1
2
3
45
6
7
D
D
D
DG
S
A
S
S
A
IRF7464
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Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 1.1 ––– ––– S VDS = 50V, ID = 0.72A
QgTotal Gate Charge –– – 9 .5 14 I D = 0.72A
Qgs Gate-to-Source Charge ––– 2.5 3.8 nC VDS = 160V
Qgd Gate-to-Drain ("Miller") Charge ––– 4.6 6.9 VGS = 10V,
td(on) Turn-On Delay Time ––– 11 ––– VDD = 100V
trRise Time ––– 9.5 ––– ID = 0.72A
td(off) Turn-Off Delay Time ––– 18 ––– RG = 24Ω
tfFall Time ––– 15 ––– VGS = 10V
Ciss Input Capacitance ––– 280 ––– VGS = 0V
Coss Output Capacitance ––– 52 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 14 ––– pF ƒ = 1.0MHz
Coss Output Capacitance ––– 330 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss Output Capacitance ––– 25 ––– VGS = 0V, VDS = 160V, ƒ = 1.0MHz
Coss eff. Effective Output Capacitance ––– 48 ––– VGS = 0V, VDS = 0V to 160V
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy––– 68 mJ
IAR Avalanche Current––– 1.2 A
EAR Repetitive Avalanche Energy––– 0.25 mJ
Avalanche Characteristics
S
D
G
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode)
––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1 .3 V TJ = 25°C, IS = 0.72A, VGS = 0V
trr Reverse Recovery Time ––– 60 90 ns TJ = 25°C, IF = 0.72A
Qrr Reverse RecoveryCharge ––– 130 200 nC di/dt = 100A/µs
Diode Characteristics
2.3
10 A
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 20 0 ––– – –– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.23 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.73 ΩVGS = 10V, ID = 0.72A
VGS(th) Gate Threshold Voltage 3.0 ––– 5 .5 V VDS = VGS, ID = 250µA
––– ––– 25 µA VDS = 200V, VGS = 0V
––– ––– 250 VDS = 160V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V
Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -30V
IGSS
IDSS Drain-to-Source Leakage Current
Parameter Typ. Max. Units
RθJA Maximum Junction-to-Ambient––– 50 °C/W
Thermal Resistance
IRF7464
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Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.01
0.1
1
10
0.1 1 10 100
20
µ
s PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
15V
10V
9.0V
8.0V
7.5V
7.0V
6.5V
6.0V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
6.0V
0.1
1
10
0.1 1 10 100
20
µ
s PULSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
15V
10V
9.0V
8.0V
7.5V
7.0V
6.5V
6.0V
V , Drain-to-Source Volta
g
e (V)
I , Drain-to-Source Current (A)
DS
D
6.0V
0.1
1
10
6.0 6.5 7.0 7.5 8.0
V = 50V
20µs PULSE WIDTH
DS
V , Gate-to-Source Volta
g
e (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
Fig 4. Normalized On-Resistance
Vs. Temperature
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Junction Temperature( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
1.2A
IRF7464
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Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
0246810 12 14
0
4
8
12
16
20
Q , Total Gate Char
g
e (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
0.72A
V = 40V
DS
V = 100V
DS
V = 160V
DS
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
0.4 0.5 0.6 0.7 0.8 0.9 1.0
V ,Source-to-Drain Volta
g
e (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
0.1
1
10
100
1 10 100 1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T = 150 C
= 25 C
°°
J
A
V , Drain-to-Source Volta
g
e (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
Fig 8. Maximum Safe Operating Area
110 100 1000
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
10000
C, Capacitance(pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = C
gs + Cgd, C
ds SHORTED
Crss
= C
gd
Coss
= C
ds + Cgd
IRF7464
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Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig 6. On-Resistance Vs. Drain Current
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RGD.U.T.
10V
+
-
VDD
25 50 75 100 125 150
0.0
0.4
0.8
1.2
1.6
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
IRF7464
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Fig 13. On-Resistance Vs. Gate Voltage
Fig 12. On-Resistance Vs. Drain Current
Fig 13a&b. Basic Gate Charge Test Circuit
and Waveform
Fig 14a&b. Unclamped Inductive Test circuit
and Waveforms Fig 14c. Maximum Avalanche Energy
Vs. Drain Current
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
VGS
Q
G
Q
GS
Q
GD
V
G
Charge
tp
V
(
BR
)
DSS
I
AS
RG
IAS
0.01
Ω
t
p
D.U.T
L
VDS
+
-VDD
DRIVER
A
15V
20V
25 50 75 100 125 150
0
40
80
120
160
200
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
0.5A
0.8A
1.2A
0.0 1.0 2.0 3.0 4.0 5.0
ID , Drain Current (A)
0.50
0.60
0.70
RDS (on) , Drain-to-Source On Resistance ( Ω)
VGS = 10V
7 8 9 10 11 12 13 14 15
VGS, Gate -to -Source Voltage (V)
0.50
0.60
0.70
RDS(on), Drain-to -Source On Resistance ( Ω)
ID = 0.72A
IRF7464
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SO-8 Package Details
K x 45°
C
8X
L
8X
θ
H
0.2 5 ( .0 1 0 ) M A M
A
0.10 (.004)
B 8X
0 .25 ( .0 1 0 ) M C A S B S
- C -
6X
e
- B -
D
E
- A -
8 7 6 5
1 2 3 4
5
6
5
RECOMMENDED FOOTPRINT
0.72 (.028 )
8X
1.78 (.0 70 )
8 X
6.46 ( .2 55 )
1.27 ( .050 )
3X
DIM IN CH ES MIL L IMETE RS
MIN MA X MIN MA X
A .0 53 2 .0 68 8 1 .35 1 .7 5
A 1 .0 04 0 .0 09 8 0 .10 0 .2 5
B .0 14 .0 18 0 .36 0 .46
C .0 07 5 .0 0 98 0 .1 9 0 .2 5
D .1 89 .1 9 6 4 .8 0 4 .9 8
E .1 50 .1 57 3 .81 3 .99
e .0 5 0 BAS IC 1 .2 7 B AS IC
e 1 .0 2 5 BAS IC 0.6 3 5 B AS IC
H .2 28 4 .2 4 40 5 .80 6 .2 0
K .0 11 .0 19 0 .28 0 .48
L 0 .1 6 .0 50 0 .41 1 .2 7
θ
0 ° 8 ° 0 ° 8°
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2 . CON TROL LING D IMENSION : INC H.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4 . OUT L INE CONFORMS T O J EDEC OUT LINE MS - 0 12 AA.
DIM ENSION DOES NOT INCLUDE MOLD PROTRUSIONS
MOL D P ROTRUSIONS NOT T O EX CEED 0 .2 5 (.00 6).
DIME NS IONS IS T HE L E NGTH OF L EAD F OR SOL DE RING TO A SU BST RAT E..
5
6
A1
e1
θ
SO-8 Part Marking
IRF7464
8 www.irf.com
33 0.00
(12.992)
MAX.
14.4 0 ( .566 )
12.4 0 ( .488 )
N OT ES :
1. CONTROLLING DIMENSION : MILLIMETER.
2 . OUTLINE CONFORMS TO E IA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
1 2.3 ( .484 )
1 1.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONT RO LLING DIM E NSIO N : M ILLIMET ER .
2. AL L DIMENSION S ARE SHOWN IN M ILLIMETER S
(
INCHES
)
.
3. OU TLINE CO N FORM S TO EIA-481 & EIA-541.
SO-8 Tape and Reel
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
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Data and specifications subject to change without notice. 4/00
Repetitive rating; pulse width limited by
max. junction temperature.
ISD ≤ 0.72A, di/dt ≤ 130A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Notes:
Starting TJ = 25°C, L = 94mH
RG = 25 Ω, IAS = 1.2A.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
When mounted on 1 inch square copper board, t<10 sec
