IXTA80N10T IXTP80N10T TrenchMVTM Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = 100V 80A 14m TO-263 AA (IXTA) G S Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M 100 100 V V VGSS VGSM Continuous Transient 20 30 V V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 80 220 A A IA EAS TC = 25C TC = 25C 25 400 A mJ PD TC = 25C 230 W dV/dt IS IDM, VDD VDSS, TJ 175C 10 V/ns -55 ... +175 175 -55 ... +175 C C C TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Torque (TO-220) Weight TO-263 TO-220 D (Tab) 300 260 C C 1.13 / 10 Nm/lb.in. 2.5 3.0 g g TO-220AB (IXTP) G DS G = Gate S = Source D (Tab) D = Drain Tab = Drain Features z International Standard Packages 175C Operating Temperature z Avalanche Rated z High Current Handling Capability z Fast Intrinsic Diode z Low RDS(on) z Advantages z z z Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 105 VGS(th) VDS = VGS, ID = 100A 2.5 IGSS Applications V 5.0 V VGS = 20V, VDS = 0V 200 nA IDSS VDS = 105V, VGS= 0V 5 150 A A RDS(on) VGS = 10V, ID = 25A, Note 1 & 2 TJ = 150C Easy to Mount Space Savings High Power Density 14 m z z z z z z Automotive - Motor Drives - DC/DC Conversion - 42V Power Bus - ABS Systems DC/DC Converters and Off-Line UPS Primary Switch for 24V and 48V Systems High Current Switching Applications Distributed Power Architechtures and VRMs Electronic Valve Train Systems DS99648A(11/09) (c) 2009 IXYS CORPORATION, All Rights Reserved http://store.iiic.cc/ IXTA80N10T IXTP80N10T Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 33 VDS = 10V, ID = 0.5 * ID25, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 10A RG = 15 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 * VDSS, ID = 25A Qgd 55 S 3040 pF 420 pF 90 pF 31 ns 54 ns 40 ns 48 ns 60 nC 21 nC Dim. Millimeter Min. Max. Inches Min. Max. 15 nC A b b2 4.06 0.51 1.14 4.83 0.99 1.40 .160 .020 .045 .190 .039 .055 c c2 0.40 1.14 0.74 1.40 .016 .045 .029 .055 D D1 8.64 8.00 9.65 8.89 .340 .280 .380 .320 E 9.65 10.41 .380 .405 E1 e L L1 L2 L3 L4 6.22 2.54 14.61 2.29 1.02 1.27 0 8.13 BSC 15.88 2.79 1.40 1.78 0.13 .270 .100 .575 .090 .040 .050 0 .320 BSC .625 .110 .055 .070 .005 0.65 RthJC RthCS TO-263 (IXTA) Outline C/W C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. TO-220 (IXTP) Outline IS VGS = 0V 80 A ISM Repetitive, Pulse Width Limited by TJM 220 A VSD IF = 25A, VGS = 0V, Note 1 1.1 V trr IF = 25A, -di/dt = 100A/s 100 1. Gate 2. Drain 3. Source ns VR = 50V, VGS = 0V Pins: Notes 1. Pulse test, t 300s, duty cycle, d 2%. 2. On through-kole packages RDS(on) Kelvin test contact location must be 5 mm or less from the package body. 1 - Gate 3 - Source 2 - Drain 4 - Drain IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 http://store.iiic.cc/ 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA80N10T IXTP80N10T Fig. 1. Output Characteristics @ T J = 25C Fig. 2. Extended Output Characteristics @ T J = 25C 280 80 VGS = 10V 9V 8V 70 VGS = 10V 240 200 ID - Amperes ID - Amperes 60 50 7V 40 30 9V 160 8V 120 80 20 6V 7V 40 10 0 6V 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 2 4 6 8 80 14 16 18 20 2.8 VGS = 10V 9V 8V 70 R DS(on) - Normalized 50 7V 40 30 6V 20 VGS = 10V 2.4 60 ID - Amperes 12 Fig. 4. RDS(on) Normalized to ID = 40A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 150C 2.0 I D = 80A 1.6 I D = 40A 1.2 0.8 10 5V 0.4 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 2.4 -25 0 25 50 75 100 125 150 175 TJ - Degrees Centigrade VDS - Volts Fig. 5. RDS(on) Normalized to ID = 40A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 90 4.6 4.2 80 VGS = 10V 15V - - - - 3.8 TJ = 175C 70 3.4 ID - Amperes R DS(on) - Normalized 10 VDS - Volts VDS - Volts 3.0 2.6 2.2 60 50 40 30 1.8 20 1.4 1.0 10 TJ = 25C 0.6 0 0 25 50 75 100 125 150 175 200 225 250 -50 ID - Amperes -25 0 25 50 75 TC - Degrees Centigrade (c) 2009 IXYS CORPORATION, All Rights Reserved http://store.iiic.cc/ 100 125 150 175 IXTA80N10T IXTP80N10T Fig. 8. Transconductance Fig. 7. Input Admittance 140 80 120 70 60 g f s - Siemens 100 ID - Amperes TJ = - 40C 80 60 TJ = 150C 25C - 40C 40 25C 50 40 150C 30 20 20 10 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 0 8.0 20 40 60 VGS - Volts 80 100 120 140 160 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 10 240 200 9 VDS = 50V 8 I D = 25A I G = 10mA 160 VGS - Volts IS - Amperes 7 120 80 TJ = 150C 6 5 4 3 2 40 TJ = 25C 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 0 5 10 VSD - Volts 15 20 25 30 35 40 45 50 55 60 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Maximum Transient Thermal Impedance 1.00 10,000 Ciss 1,000 Z(th)JC - C / W Capacitance - PicoFarads f = 1 MHz Coss 0.10 100 Crss 10 0 5 10 15 20 25 30 35 40 0.01 0.0001 VDS - Volts 0.001 0.01 0.1 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. http://store.iiic.cc/ 1 10 IXTA80N10T IXTP80N10T Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 80 70 VDS = 50V 55 D TJ = 25C 70 t r - Nanoseconds t r - Nanoseconds VDS = 50V 60 I RG = 15 , VGS = 10V 75 RG = 15 , VGS = 10V 65 = 30A 50 65 60 55 50 45 45 40 I D TJ = 125C = 10A 40 35 35 25 35 45 55 65 75 85 95 105 115 10 125 12 14 16 18 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 95 tr td(on) - - - - 85 65 120 55 I D = 10A 45 40 t f - Nanoseconds I D = 30A 80 35 0 25 15 20 25 30 35 40 45 50 72 tf 46 60 44 56 43 42 48 41 44 40 40 39 35 45 78 160 55 70 140 75 85 95 105 115 36 125 54 TJ = 125C 42 46 40 38 TJ = 25C 38 30 22 24 26 28 30 230 VDS = 50V t f - Nanoseconds 44 td(off) - - - - TJ = 125C, VGS = 10V 120 190 I D = 10A 100 150 80 110 60 I D t d ( o f f ) - Nanoseconds 62 t d ( o f f ) - Nanoseconds t f - Nanoseconds 65 270 tf td(off) - - - - 46 20 52 I D = 30A 25 VDS = 50V 18 64 VDS = 50V Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance RG = 15, VGS = 10V 16 I D = 10A TJ - Degrees Centigrade tf 14 68 td(off) - - - - RG = 15, VGS = 10V 45 55 50 12 30 48 Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 10 28 76 RG - Ohms 48 26 t d ( o f f ) - Nanoseconds 75 160 24 49 47 VDS = 50V t d ( o n ) - Nanoseconds t r - Nanoseconds TJ = 125C, VGS = 10V 200 22 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 280 240 20 ID - Amperes 70 = 30A 40 30 15 ID - Amperes 20 25 30 35 40 45 50 55 RG - Ohms (c) 2009 IXYS CORPORATION, All Rights Reserved IXYS REF: T_80N10T(3V)12-11-07-A http://store.iiic.cc/