TD62001~004P/AP/F/AF
2001-06-27
1
TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
TD62001P,TD62001AP,TD62001F,TD62001AF,TD62002P
TD62002AP,TD62002F,TD62002AF,TD62003P,TD62003AP,TD62003F
TD62003AF,TD62004P,TD62004AP,TD62004F,TD62004AF
7CH DARLINGTON SINK DRIVER
The TD62001P / AP / F / AF Series are highvoltage, highcurrent
darlington drivers comprised of seven NPN darlington pairs.
All units feature integral clamp diodes for switching inductive
loads.
Applications include relay, hammer, lamp and display (LED)
drivers.
FEATURES
Output current (single output) 500 mA MAX.
High sustaining voltage output
35 V MIN. (TD62001P / F Series)
50 V MIN. (TD62001AP / AF Series)
Output clamp diodes
Inputs compatible with various types of logic
Package TypeP, AP : DIP16 pin
Package TypeF, AF : SOP16 pin
TYPE INPUT BASE
RESISTOR DESIGNATION
TD62001P / AP / F / AF External General Purpose
TD62002P / AP / F / AF 10.5k + 7 V
Zenner diode 14~25 V PMOS
TD62003P / AP / F / AF 2.7 k TTL, 5 V CMOS
TD62004P / AP / F / AF 10.5 k 6~15 V PMOS, CMOS
PIN CONNECTION (TOP VIEW)
Weight
DIP16P3002.54A : 1.11 g (Typ.)
SOP16P2251.27 : 0.16 g (Typ.)
TD62001~004P/AP/F/AF
2001-06-27
2
SCHEMATICS (EACH DRIVER)
TD62001P / AP / F / AF TD62002P / AP / F / AF TD62003P / AP / F / AF
TD62004P / AP / F / AF
Note: The input and output parasitic diodes cannot be used as clamp diodes.
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
P, F 0.5~35
Output Sustaining
Voltage AP, AF
VCE (SUS) 0.5~50
V
Output Current IOUT 500 mA / ch
Input Voltage VIN (Note 1) 0.5~30 V
Input Current IIN (Note 2) 25 mA
P, F 35
Clamp Diode
Reverse Voltage AP, AF
VR 50
V
Clamp Diode Forward Current IF 500 mA
P 1.0
AP 1.47
Power Dissipation
F, AF
PD
0.54 / 0.625
(Note 3)
W
P 30~75
Operating
Temperature AP, F, AF
Topr 40~85
°C
Storage Temperature Tstg 55~150 °C
Note 1: Except TD62001P / AP / F / AF
Note 2: Only TD62001P / AP / F / AF
Note 3: On glass epoxy PCB (30 × 30 × 1.6 mm Cu 50%)
TD62001~004P/AP/F/AF
2001-06-27
3
RECOMMENDED OPERATING CONDITIONS
(Ta = 40~85°C and Ta = 30~75°C for only TypeP)
CHARACTERISTIC SYMBOL CONDITION MIN TYP. MAX UNIT
P, F 0 35
Output Sustaining
Voltage AP, AF
VCE (SUS)
0 50
V
Duty = 10% 0 370
AP
Duty = 50% 0 130
Duty = 10% 0 295
P
Duty = 50% 0 95
Duty = 10% 0 233
Output Current
F, AF
IOUT
Tpw = 25 ms
7 Circuits
Ta = 85°C
Tj = 120°C
Duty = 50% 0 70
mA /
ch
Input Voltage
Except
TD62001P /
AP / F / AF
VIN 0 24 V
TD62002 14.5 24
TD62003 2.8 24
Input Voltage
(Output On)
TD62004
VIN (ON) IOUT = 400 mA
hFE = 800
6.2 24
V
TD62001 0 0.6
TD62002 0 7.4
TD62003 0 0.7
Input Voltage
(Output Off)
TD62004
VIN (OFF)
0 1.0
V
Input Current Only TD62001 IIN 0 10 mA
P, F 35 Clamp Diode Reverse
Voltage AP, AF
VR 50
V
Clamp Diode Forward Current IF 350 mA
P 0.6
AP
Ta = 85°C
0.76
Power Dissipation
AF, F
PD
Ta = 85°C (Note) 0.325
W
Note: On glass epoxy PCB (30 × 30 × 1.6 mm Cu 50%)
TD62001~004P/AP/F/AF
2001-06-27
4
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted)
CHARACTERISTIC SYMBOL
TEST
CIR
CUIT
TEST CONDITION MIN TYP. MAX UNIT
VCE = 50 V, Ta = 25°C 50
AP, AF
VCE = 50 V, Ta = 85°C 100
VCE = 35 V, Ta = 25°C 50
F
VCE = 35 V, Ta = 85°C 100
VCE = 35 V, Ta = 25°C 50
Output Leakage
Current
P
ICEX 1
VCE = 35 V, Ta = 75°C 100
µA
IOUT = 350 mA, IIN = 500 µA 1.3 1.6
IOUT = 200 mA, IIN = 350 µA 1.1 1.3
CollectorEmitter Saturation Voltage VCE (sat) 2
IOUT = 100 mA, IIN = 250 µA 0.9 1.1
V
DC Current Transfer Ratio hFE 2 VCE = 2 V, IOUT = 350 mA 1000
TD62002 VIN = 20 V, IOUT = 350 mA 1.1 1.7
TD62003 VIN = 2.4 V, IOUT = 350 mA 0.4 0.7
Input Current
(Output On)
TD62004
IIN (ON) 3
VIN = 9.5 V, IOUT = 350 mA 0.8 1.2
mA
P IOUT = 500 µA, Ta = 75°C 50 65
Input Current
(Output Off) AP, F, AF
IIN (OFF) 4
IOUT = 500 µA, Ta = 85°C 50 65
µA
IOUT = 350 mA 13.7
TD62002
IOUT = 200 mA 11.4
IOUT = 350 mA 2.6
TD62003
IOUT = 200 mA 2.0
IOUT = 350 mA 4.7
Input Voltage
(Output On)
TD62004
VIN (ON) 5 VCE = 2 V
hFE = 800
IOUT = 200 mA 4.4
V
VR = 50 V, Ta = 25°C 50
AP, AF
VR = 50 V, Ta = 85°C 100
VR = 35 V, Ta = 25°C 50
F
VR = 35 V, Ta = 85°C 100
VR = 35 V, Ta = 25°C 50
Clamp Diode
Reverse Current
P
IR 6
VR = 35 V, Ta = 75°C 100
µA
Clamp Diode Forward Voltage VF 7 IF = 350 mA 2.0 V
Input Capacitance CIN 15 pF
P, F VOUT = 35 V, RL = 87.5
CL = 15 pF 0.1
TurnOn Delay
AP, AF
tON 8
VOUT = 50 V, RL = 125
CL = 15 pF 0.1
P, F VOUT = 35 V, RL = 87.5
CL = 15 pF 0.2
TurnOff Delay
AP, AF
tOFF 8
VOUT = 50 V, RL = 125
CL = 15 pF 0.2
µs
TD62001~004P/AP/F/AF
2001-06-27
5
TEST CIRCUIT
1. ICEX 2. VCE (sat), hFE 3. IIN (ON)
4. IIN (OFF) 5. VIN (ON) 6. IR
7. VF
TD62001~004P/AP/F/AF
2001-06-27
6
8. tON, tOFF
Note 1: Pulse width 50 µs, duty cycle 10%
Output impedance 50 , tr 5 ns, tf 10 ns
Note 2: See below
INPUT CONDITION
TYPE NUMBER R1 VIH
TD62001P / AP / F / AF 2.7 k 3 V
TD62002P / AP / F / AF 0 13 V
TD62003P / AP / F / AF 0 3 V
TD62004P / AP / F / AF 0 8 V
Note 3: CL includes probe and jig capacitance.
PRECAUTIONS for USING
This IC does not include built-in protection circuits for excess current or overvoltage.
If this IC is subjected to excess current or overvoltage, it may be destroyed.
Hence, the utmost care must be taken when systems which incorporate this IC are designed.
Utmost care is necessary in the design of the output line, COMMON and GND line since IC may be destroyed
due to shortcircuit between outputs, air contamination fault, or fault by improper grounding.
TD62001~004P/AP/F/AF
2001-06-27
7
TD62001~004P/AP/F/AF
2001-06-27
8
TD62001~004P/AP/F/AF
2001-06-27
9
TD62001~004P/AP/F/AF
2001-06-27
10
TD62001~004P/AP/F/AF
2001-06-27
11
PACKAGE DIMENSIONS
DIP16P3002.54A Unit : mm
Weight: 1.11 g (Typ.)
TD62001~004P/AP/F/AF
2001-06-27
12
PACKAGE DIMENSIONS
SOP16P2251.27 Unit : mm
Weight: 0.16 g (Typ.)
TD62001~004P/AP/F/AF
2001-06-27
13
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
The products described in this document are subject to the foreign exchange and foreign trade laws.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.
000707EB
A
RESTRICTIONS ON PRODUCT USE