Bulletin I27290 12/06 IRKCS209/150P SCHOTTKY RECTIFIER 200 Amp Description/ Features The IRKCS209.. Schottky rectifier Common Cathode has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 C junction temperature. Typical applications are in high current switching power supplies, plating power supplies, UPS systems, converters, free-wheeling diodes, welding, and reverse battery protection. (1) + (2) 175 C TJ operation Low forward voltage drop High frequency operation - Guard ring for enhanced ruggedness and long term reliability UL pending (3) TOTALLY LEAD-FREE, RoHS Compliant Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu baseplate allow an easier mounting on the majority of heatsink with increased tolerance of surface roughness and improve thermal spread. The Generation V of AAP module is manufactured without hard mold, eliminating in this way any possible direct stress on the leads. The electrical terminals are secured against axial pull-out: they are fixed to the module housing via a click-stop feature already tested and proved as reliable on other IR modules. Major Ratings and Characteristics Characteristics Values Units IF(AV) Rectangular 200 A VRRM 150 V 11300 A 0.76 V - 55 to 175 C waveform IFSM @ tp = 5 s sine VF @ 100Apk, TJ=125C TJ range www.irf.com Outline TO-240AA 1 IRKCS209/150P Bulletin I27290 12/06 Voltage Ratings Parameters VR IRKCS209/150P Max. DC Reverse Voltage (V) 150 VRWM Max. Working Peak Reverse Voltage (V) Absolute Maximum Ratings Parameters IF(AV) Max. Average Forward Current IFSM Values Units 200 A Per Module Per Leg Conditions 50% duty cycle @ TC = 107 C, rectangular wave form 100 Max. Peak One Cycle Non-Repetitive 11300 Surge Current 1600 A EAS Non-Repetitive Avalanche Energy 15 mJ IAR Repetitive Avalanche Current 1 A 5s Sine or 3s Rect. pulse Following any rated load condition and with 10ms Sine or 6ms Rect. pulse rated VRRM applied TJ = 25 C, IAS = 1.8 Amps, L = 10mH Current decaying linearly to zero in 1 sec Frequency limited by TJ max. VA = 1.5 x VR typical Electrical Specifications Parameters VFM IRM Values Units Max. Forward Voltage Drop (1) Max. Reverse Leakage Current (1) Conditions 0.96 1.21 0.76 V V V @ 100A @ 200A @ 100A 0.96 V @ 200A 6 mA TJ = 25 C 85 mA TJ = 125 C TJ = 25 C TJ = 125 C VR = rated VR CT Max. Junction Capacitance 3000 pF VR = 5VDC (test signal range 100Khz to 1Mhz) 25C LS Typical Series Inductance 7.0 nH From top of terminal hole to mounting plane dv/dt Max. Voltage Rate of Change VINS 10000 RMS isolation voltage (1 sec) 3500 V/ s (Rated VR) V 50 Hz, circuit to base, all terminals shorted (1) Pulse Width < 300s, Duty Cycle <2% Thermal-Mechanical Specifications Parameters Values Units C TJ Max. Junction Temperature Range -55 to 175 Tstg Max. Storage Temperature Range -55 to 175 Conditions C RthJC Max. Thermal Resistance, Junction to Case (Per Leg) 0.6 C/W DC operation RthCS Max. Thermal Resistance, case to Heatsink 0.1 C/W Mounting Surface, smooth and greased wt T Approximate Weight Mounting Torque 10% Case Style 2 to heatsink busbar 110 (4) gr (oz) 5 Nm 4 TO - 240AA JEDEC www.irf.com IRKCS209/150P Bulletin I27290 12/06 1000 1000 Reverse Current - IR (mA) 100 100 T J = 175C 150C 10 125C 1 100C 75C 0.1 50C 0.01 25C 0.001 0 30 60 90 120 Reverse Voltage - VR (V) 150 Fig. 2 - Typical Values Of Reverse Current Vs. Reverse Voltage 10000 Junction Capacitance - CT (pF) Instantaneous Forward Current - IF (A) Tj = 175C Tj = 125C 10 Tj = 25C 1 T = 25C J 1000 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 30 60 90 120 Forward Voltage Drop - VFM (V) Reverse Voltage - VR (V) Fig. 1 - Max. Forward Voltage Drop Characteristics Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage Thermal Impedance ZthJC (C/W) 1 D = 0.75 D = 0.5 D = 0.33 D = 0.25 0.1 D = 0.2 Single Pulse (Thermal Resistance) 0.01 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01 t1, Rectangular Pulse Duration (Seconds) Fig. 4 - Max. Thermal Impedance ZthJC Characteristics www.irf.com 3 IRKCS209/150P Bulletin I27290 12/06 120 Average Power Loss - (Watts) Allowable Case Temperature (C) 200 Square wave (D=0.50) 80% rated Vr applied 150 DC 100 50 180 120 90 60 30 100 80 60 DC 40 20 see note (2) 0 0 0 50 100 150 200 250 0 300 Average Forward Current - IF(AV) (A) 60 90 120 150 Average Forward Current - IF(AV) (A) Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current Non-Repetitive Surge Current - IFSM (A) 30 Fig. 6 - Forward Power Loss Characteristics 100000 10000 1000 At Any Rated Load Condition And With Rated Vrrm Applied Following Surge 100 10 100 1000 10000 Square Wave Pulse Duration - tp (microsec) Fig. 7 - Max. Non-Repetitive Surge Current L IRFP460 DUT Rg = 25 ohm CURRENT MONITOR HIGH-SPEED SWITCH FREE-WHEEL DIODE + Vd = 25 Volt 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit (2) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR 4 www.irf.com IRKCS209/150P Bulletin I27290 12/06 Outline Table Dimensions are in millimeters and [inches] Ordering Information Table Device Code IR KC S 20 9 1 2 3 4 5 / 1 - International Rectifier 2 - Circuit Configuration 3 - S = Schottky Diode 4 - Average Rating (x10) 5 - Product Silicon Identification 6 - Voltage Rating (150 = 150V) 7 - Lead-Free 150 P 6 7 KD = Add-A-Pak - 2 diodes/common cathode www.irf.com 5 IRKCS209/150P Bulletin I27290 12/06 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level and Lead-Free. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 12/06 6 www.irf.com