IT(AV) 50 70 90 A
@ TC70 70 70 oC
IT(RMS) 80 110 141 A
ITSM @
50Hz 1310 1660 1780 A
@ 60Hz 1370 1740 1870 A
I2t @ 50Hz 8550 13860 15900 A2s
@ 60Hz 7800 12650 14500 A2s
I2√t 85500 138500 159100 A2√s
VDRM/VRRM 100 to 1200 V
TJ-40 to 125 oC
Parameters T50RIA T70RIA T90RIA Units
Major Ratings and Characteristics
Features
Electrically isolated base plate
Types up to 1200 VRRM
3500 VRMS isolating voltage
Simplified mechanical designs,
rapid assembly
High surge capability
Large creepage distances
UL E78996 approved
RoHS Compliant
These series of T-modules are inteded for general
purpose applications such as battery chargers,
welders and plating equipment, regulated power
supplies and temperature and speed control circuits.
The semiconductors are electrically isolated from the
metal base, allowing common heatsinks and compact
assemblies to be built.
Description
MEDIUM POWER PHASE CONTROL THYRISTORS Power Modules
50 A
70 A
90 A
T..RIA SERIES
Bulletin I27105 rev. C 10/06
Document Number: 93756
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1
T..RIA Series
Bulletin I27105 rev. C 10/06
IT(AV) Max. average on-state current 50 70 90 A 180° conduction, half sine wave
@ Case temperature 7 0 70 70 ° C
IT(RMS) Max. RMS on-state current 80 110 141 A
ITSM Maximum peak, one-cycle 1310 1660 1780 A t = 10ms No voltage
on-state, non-repetitive 1370 1740 1870 t = 8.3ms reapplied
surge current 1100 1400 1500 t = 10ms 100% VRRM
1150 1460 1570 t = 8.3ms reapplied Sine half wave,
I2t Maximum I2t for fusing 8550 13860 15900 A2s t = 10ms No voltage Initial TJ = TJ max.
7800 12650 14500 t = 8.3ms reapplied
6050 9800 11250 t = 10ms 100% VRRM
5520 8950 10270 t = 8.3ms reapplied
I2√t Maximum I2√t for fusing 85500 138500 159100 A2√s t = 0.1 to 10ms, no voltage reapplied
VT(TO)1 Low level value of threshold 0.97 0.77 0.78 V (16.7% x π x IT(AV) < I < π x IT(AV)), @ TJ max.
voltage
VT(TO)2 High level value of threshold 1.13 0.88 0.88 (I > π x IT(AV)), @ TJ max.
voltage
rt1 Low level value on-state 4 . 1 3 . 6 2 . 9 mΩ(16.7% x π x IT(AV) < I < π x IT(AV)), @ TJ max.
slope resistance
rt2 High level value on-state 3. 3 3 . 2 2 .6 (I > π x IT(AV)), @ T J max.
slope resistance
VTM Maximum on-state voltage drop 1.60 1.55 1.55 V ITM = π x IT(AV), TJ = 25°C., tp = 400µs square
Av. power = VT(TO) x IT(AV) + rf x (I T(RMS))2
IHMaximum holding current 200 mA Anode supply = 6V initial IT = 30A, TJ = 25°C
ILMaximum latching current 400 m A Anode supply = 6V resistive load = 10Ω
gate pulse: 10V, 100µs, TJ = 25°C
tgd Typical turn-on time 0. 9 µs TJ = 25oC Vd = 50% VDRM, ITM = 50 A
Ig = 500mA, tr <= 0.5, tp >= 6µs
trr Typical reverse recovery time 3.0 µs T J =125°C, ITM = 50A tp = 300µs di/dt =10A/µs
tqTypical turn-off time 110 µs TJ = T J max., I TM = 50A, tp = 300µs,
-di/dt = 15A/µs, Vr = 100V; linear to 80%V DRM
Parameter T50RIA T70RIA T90RIA Units Conditions
On-state Conduction
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number Voltage VDRM/VRRM, maximum repetitive VRSM, maximum non-repetitive IDRM/IRRM max.
Code peak reverse voltage peak reverse voltage @ 25°C
VV µA
10 100 150
20 200 300
T50RIA 40 400 500
T70RIA 60 600 700 100
T90RIA 80 800 900
100 1000 1100
120 1200 1300
Switching
Parameter T50RIA T70RIA T90RIA Units Conditions
Document Number: 93756
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2
T..RIA Series
Bulletin I27105 rev. C 10/06
TJMax. junction operating -40 to 125 °C
temperature range
Tstg Max. storage temperature -40 to 150 °C
range
RthJC Max. thermal resistance, 0.65 0.50 0.38 K/W DC operation, per junction
junction to case
RthCS Max. thermal resistance, 0.2 K/W Mounting surface smooth, flat andgreased
case to heatsink
T Mounting to heatsink 1.3 ± 10% Nm M3.5 mounting screws (2)
torque ± 10% terminals 3 ± 1 0% M 5 screw terminals
wt Approximate weight 54 g See outline table
Case style D-56 T type
IRRM Maximum peak reverse and 1 5 mA TJ = TJ = TJ max.
IDRM off-state leakage current
VINS RMS isolation voltage 3500 V 50Hz, circuit to base, all terminals shorted,
TJ = 25°C, t = 1s
dv/dt Critical rate of rise of off-state 500 V/µs TJ = TJ max., linear to 80% rated VDRM (1)
voltage
Blocking
Thermal and Mechanical Specifications
(2) A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the
spread of the compound.
Parameter T50RIA T70RIA T90RIA Units Conditions
Parameter T50RIA T70RIA T90RIA Units Conditions
Triggering
PGM Max. peak gate power 10 12 12 W tp ≤ 5ms, TJ = TJ max.
PG(AV) Max. average gate power 2.5 3.0 3.0 W f=50Hz, TJ = TJ max.
IGM Max. peak gate current 2.5 3.0 3.0 A tp ≤ 5ms, TJ = TJ max.
-VGT Max. peak negative 10 10 10 V
gate voltage
VGT Max. required DC gate 4.0 4.0 4.0 V TJ = - 40°C Anode supply = 6V, resistive
voltage to trigger 2.5 2.5 2.5 TJ = 25°C load; Ra = 1Ω
1.5 1.5 1.5 TJ = TJ max.
IGT Max. required DC gate 250 270 270 TJ = - 40°C Anode supply = 6V, resistive
current to trigger 100 120 120 mA TJ = 25°C load; Ra = 1Ω
50 60 60 TJ = TJ max.
VGD Max. gate voltage 0.2 0.2 0.2 V @ TJ = TJ max., rated VDRM applied
that will not trigger
IGD Max. gate current 5.0 6.0 6.0 mA
that will not trigger
di/dt Max. rate of rise of 200 A/µs VD = 0.67 rated VDRM, ITM = 2 x rated di/dt
turned-on current 18 0 Ig = 400mA for T50RIA and Ig = 500mA for
160 T70RIA & T90RIA; tr < 0.5µs, tp >= 6µs
150 For repetitive value use 40% non-repetitive
Per JEDEC std. RS397,5.2.2.6
Parameter T50RIA T70RIA T90RIA Units Conditions
non lubricated
threads
(1) Available with dv/dt = 1000V/μs, to complete code add S90 i.e. T90RIA80S90
Document Number: 93756
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3
T..RIA Series
Bulletin I27105 rev. C 10/06
Sinusoidal conduction @ TJ max. Rectangular conduction @ TJ max.
Devices Un its
180o120o90o60o30o180o120o90o60o30o
T50RIA 0.08 0.10 0.13 0.19 0.31 0.06 0.10 0.14 0.20 0.32 K /W
T70RIA 0.07 0.08 0.10 0.14 0.24 0.05 0.08 0.11 0.15 0.24
T90RIA 0.05 0.06 0.08 0.12 0.20 0.04 0.06 0.09 0.12 0.20
ΔR Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
All dimensions in millimeters (inches)
Outline Table
Device Code
1
T 50 RIA 120
Circuit configuration **
23 4
1- Module type
2- Current rating
3- Circuit configuration **
4- Voltage code : code x 10 = V RRM
Ordering Information Table
G
+
-
Document Number: 93756
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T..RIA Series
Bulletin I27105 rev. C 10/06
Fig. 4 - On-state Power Loss Characteristics
Fig. 3 - On-state Power Loss Characteristics
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
50
60
70
80
90
100
110
120
130
0 1020304050607080
DC
30° 60°90°120° 180°
Av erage On-s tate Cu rrent (A)
M axim um Allowa ble Case Tem perature (°C)
Conduction Period
T50 RIA.. Series
R (DC ) = 0.65 K /W
thJC
0 20406080100120
Maximum Allowable Ambient Temperature (°C)
0.3 K/W
10 K/W
5 K/W
3 K/W
2 K/W
1.5 K/W
1 K/W
0.7 K/W
0.5 K/W
R = 0.1 K/W - Delta R
thSA
0
10
20
30
40
50
60
70
80
0 1020304050
RM S Limit
Conduction Angle
180°
120°
90°
60°
30°
M ax imum Average O n-state Pow er Loss (W )
Average On-state Current (A)
T 5 0 R IA.. Ser ies
T = 12 5°C
J
0 20 40 60 80 100 120
M axim um Allowable Am bient Te mperature (°C)
R = 0.1 K/W - Delta R
thSA
5 K/W
3 K/W
2 K/W
1.5 K/W
1 K/W
0.7 K/W
0.5 K/W
0.3 K/W
0
10
20
30
40
50
60
70
80
90
100
110
0 1020304050607080
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
M aximum Average O n- state Powe r Loss (W )
Average O n-state Current (A)
T50RIA.. Series
T = 125°C
J
50
60
70
80
90
100
110
120
130
0 102030405060
30° 60° 90° 120° 180°
A verage O n-state Current (A)
M aximum A llowable Case Tem perature (°C )
Conduction Angle
T50RIA.. Series
R (DC ) = 0.65 K /W
thJC
Document Number: 93756
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T..RIA Series
Bulletin I27105 rev. C 10/06
Fig. 9 - Gate Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
500
600
700
800
900
1000
1100
1200
1 10 100
Num ber Of E qual A m plitude Half Cycle Current Pulses (N)
P eak Half Sine Wav e On- state C u r rent (A)
T50R IA .. S eries
Initial T = 12 5°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM J
500
600
700
800
900
1000
1100
1200
1300
0.01 0.1 1
P eak H alf Sine Wave On -state Current (A)
Pulse Train Duration (s)
M axim um N on Rep etitive Surge C urrent
Ve rsus Pulse Train Duration. Control
O f Conduction May Not Be M aintained.
In itia l T = 125°C
No Voltage Reapplied
Rated V Reapplied
RRM
J
T 5 0 R IA.. Seri e s
Fig. 10 - On-state Voltage Drop Characteristics
1
10
100
1000
0.5 1 1.5 2 2.5 3 3.5 4 4.5
T = 25°C
J
Instantan eous O n- state C urrent (A )
Instantaneous O n-state Voltage (V)
T50RIA.. Series
T = 125°C
J
0.1
1
10
100
0.001 0.01 0.1 1 10 100 1000
VGD
IGD
(b) (a)
Tj=25 °C
Tj=125 °C
Tj=-40 °C
(1) (2)
Instan taneou s Ga te C urrent (A )
Instanta neous G ate V oltage (V)
a) Re co mm ended load line for
b) Reco m mende d load line for
R ectangula r gate pulse (1 ) P G M = 10W , tp = 5m s
(2 ) P G M = 20W , tp = 2m s
(3 ) P G M = 50W , tp = 1m s
(4) P G M = 10 0W , tp = 500µs
<=30% rated di/dt : 20V, 65ohm s
tr=1µ s, tp>= 6µs
T5 0R IA .. S eries Frequency Lim ited by P G (AV )
rated di/dt : 20V, 30ohms;
tr=0.5 µs, tp>= 6µs
(3) (4)
Document Number: 93756
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T..RIA Series
Bulletin I27105 rev. C 10/06
Fig. 15 - On-state Power Loss Characteristics
Fig. 12 - Current Ratings Characteristics Fig. 13 - Current Ratings Characteristics
50
60
70
80
90
100
110
120
130
0 20406080100120
DC
30° 60°90°120°180°
A verage O n-state Current (A )
Maxim um Allowable Case Tem perature (°C)
Conduction Period
T 7 0 R IA.. Serie s
R ( DC ) = 0.50 K/W
thJC
0 20 40 60 80 100 120
M axim um Allow able Am bient Tem perature (°C)
R = 0.1 K/W - Delta R
thSA
0.3 K/W
0.7 K/W
0.5 K/W
1 K/W
1.5 K/W
2 K/W
3 K/W
5 K/W
7 K/W
0
10
20
30
40
50
60
70
80
90
100
0 10203040506070
RMS Limit
Conduction Angle
180°
120°
90°
60°
30°
M axim um Averag e O n-state Po w er Loss (W)
Ave rage On-state C u rrent (A)
T70RIA.. S eries
T = 125°C
J
0 20 40 60 80 100 120
M a ximum Allowa ble Ambien t Temperature (°C)
5 K/W
3 K/W
2 K/W
1.5 K/W
1 K/W
0.7 K/W
0.5 K/W
0.3 K/W
R = 0.1 K/W - Delta R
thSA
0
20
40
60
80
100
120
140
0 20406080100120
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
M aximu m A verage O n-state Pow er Loss (W )
A verage On-state Current (A)
T7 0RIA.. Series
T = 12 5°C
J
Fig. 18 - On-state Power Loss Characteristics
50
60
70
80
90
100
110
120
130
0 1020304050607080
30° 60° 90° 120° 180°
A verage O n-state C urrent (A )
M aximum A llowable Case T emperature (°C)
Conduction Angle
T70R IA.. Series
R (D C ) = 0 .50 K /W
thJC
Document Number: 93756
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7
T..RIA Series
Bulletin I27105 rev. C 10/06
Fig. 19 - Gate Characteristics
Fig. 16 - Maximum Non-Repetitive Surge
Current Fig. 17 - Maximum Non-Repetitive Surge Current
Fig. 10 - On-state Voltage Drop Characteristics
700
800
900
1000
1100
1200
1300
1400
1500
110100
Num ber Of E qual Am plitude Half Cycle Current Pulses (N)
P eak Half Sine Wav e On- s ta t e Cur rent (A)
T70R IA.. Series
A t A ny Rated Load Condition And W ith
R ated V Applied Following Surge.
I n itia l T = 1 25 ° C
@ 60 H z 0.0083 s
@ 50 H z 0.0100 s
J
RRM
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
0.01 0.1 1
Pe ak H a lf S ine Wave On-state C u rrent ( A)
Pulse Train Duration (s)
M aximum Non Repetitive Surge C urrent
Versus Pulse Train Du ration. Control
O f Conduction M ay Not Be M aintained.
Initial T = 125°C
No Vo ltage R e ap plied
Rated V R eapplied
RRM
J
T 7 0RIA .. Serie s
1
10
100
1000
00.511.522.533.54
T = 25°C
J
Instan tan eous On- state Cu rrent (A)
Instantaneous On-state Voltage (V)
T70RIA.. Series
T = 125°C
J
0.1
1
10
100
0.001 0.01 0.1 1 10 100 1000
VGD
IGD
(b) (a)
Tj=25 °C
Tj=125 °C
Tj=-40 °C
(1) (2)
In st an ta ne ou s G a te C u rr ent (A )
Instantan eous G ate V oltage (V )
a) R ec om m en ded load line for
b) Rec om men ded load line for
R ectangula r gate pulse
T 70 R IA .., T90RIA.. S e ries F re quenc y Lim ited by P G(A V )
tr=1µ s, tp>=6µ s
rated di/dt : 20V , 20o hms ;
tr= 0.5µ s, tp>= 6µ s
< =3 0% rated di/dt : 15V, 40ohms
(1) PG M = 12W, tp = 5m s
(2) PG M = 30W, tp = 2m s
(3) PG M = 60W, tp = 1m s
(4) PG M = 200W, tp = 300µs
(3) (4)
Document Number: 93756
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8
T..RIA Series
Bulletin I27105 rev. C 10/06
Fig. 29 - On-state Power Loss Characteristics
Fig. 23 - Current Ratings Characteristics Fig. 24 - Current Ratings Characteristics
50
60
70
80
90
100
110
120
130
0 20 40 60 80 100 120 140 160
DC
30° 60°
90°
120°180°
A verage O n-state Current (A )
Maximum Allowable Case Temperature (°C)
Conduction Period
T 9 0 R IA.. Serie s
R ( DC ) = 0.38 K/W
thJC
0 20406080100120
M axim um Allow able Am bient Temperature (°C)
R = 0.1 K/W - Delta R
thSA
0.3 K/W
0.5 K/W
0.7 K/W
1 K/W
1.5 K/W
2 K/W
3 K/W
0
20
40
60
80
100
120
140
0 102030405060708090
RMS Limit
Conduction Angle
180°
120°
90°
60°
30°
M axim um A verage On-state P ow er Loss (W)
Average O n-state Current (A)
T90RIA Series
T = 125°C
J
0 20406080100120
M ax im um A llow ab le A m bie nt Temperatu re (°C )
R = 0.1 K/W - Delta R
thSA
0.3 K/W
0.5 K/W
0.7 K/W
1 K/W
1.5 K/W
2 K/W
0
20
40
60
80
100
120
140
160
180
0 20 40 60 80 100 120 140 160
DC
180°
120°
90°
60°
30°
RM S Limit
Conduction Period
Maximum Average On-state Power Loss (W)
Average O n-state Current (A )
T 9 0 R IA.. Series
T = 125°C
J
Fig. 29 - On-state Power Loss Characteristics
50
60
70
80
90
100
110
120
130
0 20406080100
30° 60° 90° 120° 180°
A verage O n-state Current (A )
Maximum Allowable Case Temperature (°C)
Conduction Angle
T 9 0 R IA.. Ser ies
R (DC) = 0.38 K/W
thJC
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9
T..RIA Series
Bulletin I27105 rev. C 10/06
Fig. 27 - Maximum Non-Repetitive Surge Current Fig. 28 - Maximum Non-Repetitive Surge Current
Fig. 21 - On-state Voltage Drop Characteristics
700
800
900
1000
1100
1200
1300
1400
1500
1600
1 10 100
Number Of Equal Am plitude Half Cycle C urrent Pulses (N)
Pe ak H alf S ine Wave On-state C u rrent (A)
T9 0RIA .. Serie s
A t Any Rated Load C ondition And With
Rated V A pplied Following Surge.
I nitia l T = 12 5° C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
RRM J
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
0.01 0.1 1
Pe ak H alf Sin e W ave O n -state C urr ent (A)
P ulse Train Duration (s)
M axim um Non R e petitive S urge C urrent
Versus Pulse Train Duration. C ontrol
Of C onduction May N ot Be Maintained.
Initial T = 125°C
No Voltag e Reap p lied
Ra ted V Reapplied
RRM
J
T90R IA.. Series
1
10
100
1000
00.511.522.533.5
T = 25°C
J
Instantan eous O n- state Cu rr en t (A)
Instantaneous On-state V oltage (V)
T 90R IA. . S eries
T = 125°C
J
0.01
0.1
1
0.001 0.01 0.1 1 10 100
S quare W ave Pulse D uration (s)
thJC
Tran sient T h er ma l Imped ance Z (K/W)
S teady State V alue
R = 0.65 K /W
R = 0.50 K /W
R = 0.38 K /W
(D C O peration)
thJC
thJC
thJC
T 50RIA.. Series
T70R IA .. S eries
T90R IA .. Series
Fig. 34 - Thermal Impedance Z thJC Characteristics
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T..RIA Series
Bulletin I27105 rev. C 10/06
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
10/06
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
Document Number: 93756
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11
Legal Disclaimer Notice
Vishay
Document Number: 99901 www.vishay.com
Revision: 12-Mar-07 1
Notice
The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
International Rectifier®, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN®
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.
