VS-HFA30PA60CPbF, VS-HFA30PA60C-N3 www.vishay.com Vishay Semiconductors HEXFRED(R) Ultrafast Soft Recovery Diode, 2 x 15 A FEATURES * Ultrafast and ultrasoft recovery * Very low IRRM and Qrr * Designed and qualified JEDEC(R)-JESD47 according to * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TO-247AC Available BENEFITS Base common cathode 2 * * * * * Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count DESCRIPTION VS-HFA30PA60C... is a state of the art center tap ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600 V and 15 A per leg continuous current, the VS-HFA30PA60C... is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED(R) product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to "snap-off" during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED VS-HFA30PA60C... is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. 1 3 Anode Anode 2 1 2 Common cathode PRODUCT SUMMARY Package TO-247AC IF(AV) 2 x 15 A VR 600 V VF at IF 1.2 V trr typ. 19 ns TJ max. 150 C Diode variation Common cathode ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Cathode to anode voltage Maximum continuous forward current TEST CONDITIONS VR per leg per device IF Single pulse forward current IFSM Maximum repetitive forward current IFRM Maximum power dissipation Operating junction and storage temperature range PD TJ, TStg TC = 100 C VALUES UNITS 600 V 15 30 150 A 60 TC = 25 C 74 TC = 100 C 29 -55 to +150 W C Revision: 14-Jul-15 Document Number: 94068 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA30PA60CPbF, VS-HFA30PA60C-N3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PER LEG (TJ = 25 C unless otherwise specified) PARAMETER Cathode to anode breakdown voltage SYMBOL VBR TEST CONDITIONS IR = 100 A IF = 15 A Maximum forward voltage VFM IF = 30 A See fig. 1 MIN. TYP. MAX. 600 - - - 1.3 1.7 - 1.5 2.0 UNITS V IF = 15 A, TJ = 125 C - 1.2 1.6 VR = VR rated - 1.0 10 - 400 1000 - 25 50 pF - 12 - nH Maximum reverse leakage current IRM Junction capacitance CT VR = 200 V Series inductance LS Measured lead to lead 5 mm from package body TJ = 125 C, VR = 0.8 x VR rated See fig. 2 See fig. 3 A DYNAMIC RECOVERY CHARACTERISTICS PER LEG (TJ = 25 C unless otherwise specified) PARAMETER Reverse recovery time See fig. 5, 10 Peak recovery current See fig. 6 Reverse recovery charge See fig. 7 Peak rate of fall of recovery current during tb See fig. 8 SYMBOL TEST CONDITIONS MIN. TYP. MAX. - trr IF = 1.0 A, dIF/dt = 200 A/s, VR = 30 V - 19 trr1 TJ = 25 C - 42 60 trr2 TJ = 125 C - 70 120 IRRM1 TJ = 25 C - 4.0 6.0 IRRM2 TJ = 125 C - 6.5 10 - 80 180 - 220 600 IF = 15 A dIF/dt = 200 A/s VR = 200 V UNITS ns A Qrr1 TJ = 25 C Qrr2 TJ = 125 C dI(rec)M/dt1 TJ = 25 C - 250 - dI(rec)M/dt2 TJ = 125 C - 160 - MIN. TYP. MAX. UNITS - - 300 C - - 1.7 - - 0.85 nC A/s THERMAL-MECHANICAL SPECIFICATIONS PER LEG PARAMETER Lead temperature Junction to case, single leg conduction Junction to case, both legs conducting SYMBOL Tlead TEST CONDITIONS 0.063" from case (1.6 mm) for 10 s RthJC K/W Thermal resistance, junction to ambient RthJA Typical socket mount - - 40 Thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth and greased - 0.25 - - 6.0 - g - 0.21 - oz. 6.0 (5.0) - 12 (10) kgf * cm (lbf * in) Weight Mounting torque Marking device Case style TO-247AC (JEDEC) HFA30PA60C Revision: 14-Jul-15 Document Number: 94068 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA30PA60CPbF, VS-HFA30PA60C-N3 Vishay Semiconductors 100 10 000 TJ = 150 C TJ = 150 C TJ = 125 C TJ = 25 C 10 1000 IR - Reverse Current (A) IF - Instantaneous Forward Current (A) www.vishay.com 100 TJ = 125 C 10 1 0.1 TJ = 25 C 1 1.0 0.01 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0 100 200 300 400 500 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current (Per Leg) Fig. 2 - Typical Reverse Current vs. Reverse Voltage (Per Leg) 600 CT - Junction Capacitance (pF) 100 TJ = 25 C 10 0 100 200 300 400 500 600 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg) ZthJC - Thermal Response 10 1 PDM D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.1 Single pulse (thermal response) 0.01 0.00001 0.0001 0.001 t1 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) Revision: 14-Jul-15 Document Number: 94068 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA30PA60CPbF, VS-HFA30PA60C-N3 www.vishay.com Vishay Semiconductors 100 800 IF = 30 A IF = 15 A IF = 5.0 A 80 VR = 200 V TJ = 125 C TJ = 25 C 60 Qrr (nC) trr (ns) 600 40 20 400 200 VR = 200 V TJ = 125 C TJ = 25 C 0 100 0 100 1000 1000 dIF/dt (A/s) dIF/dt (A/s) Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt (Per Leg) Fig. 7 - Typical Stored Charge vs. dIF/dt (Per Leg) 25 10 000 VR = 200 V TJ = 125 C TJ = 25 C IF = 30 A IF = 15 A IF = 5.0 A dI(rec)M/dt (A/s) 20 IRR (A) IF = 30 A IF = 15 A IF = 5.0 A 15 10 5 IF = 30 A IF = 15 A IF = 5.0 A 1000 VR = 200 V TJ = 125 C TJ = 25 C 0 100 100 100 1000 1000 dIF/dt (A/s) dIF/dt (A/s) Fig. 6 - Typical Recovery Current vs. dIF/dt (Per Leg) Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt (Per Leg) VR = 200 V 0.01 L = 70 H D.U.T. dIF/dt adjust D G IRFP250 S Fig. 9 - Reverse Recovery Parameter Test Circuit Revision: 14-Jul-15 Document Number: 94068 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA30PA60CPbF, VS-HFA30PA60C-N3 www.vishay.com Vishay Semiconductors (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (4) Qrr - area under curve defined by trr and IRRM (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current Qrr = (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions ORDERING INFORMATION TABLE Device code VS- HF A 30 PA 60 C PbF 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - HEXFRED(R) family 3 - Electron irradiated 4 - Current rating (30 = 30 A) 5 - PA = TO-247AC 6 - Voltage rating: (60 = 600 V) 7 - Circuit configuration C = common cathode - 8 Environmental digit: PbF = lead (Pb)-free and RoHS-compliant -N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-HFA30PA60CPbF 25 500 Antistatic plastic tube VS-HFA30PA60C-N3 25 500 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions Part marking information SPICE model www.vishay.com/doc?95542 TO-247ACPbF TO-247AC-N3 www.vishay.com/doc?95226 www.vishay.com/doc?95007 www.vishay.com/doc?95182 Revision: 14-Jul-15 Document Number: 94068 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-247AC - 50 mils L/F DIMENSIONS in millimeters and inches A A (3) (6) P E B (2) R/2 A2 S (Datum B) O K M DBM P1 A D2 Q 2xR (2) D1 (4) D 1 4 D 3 2 Thermal pad (5) L1 C L A See view B 2 x b2 3xb 0.10 M C A M 0.01 M D B M View A - A C 2x e A1 b4 (b1, b3, b5) Plating (4) E1 Base metal D DE (c) c1 E C C (b, b2, b4) (4) Section C - C, D - D, E - E SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.17 1.37 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.34 2.59 3.43 2.59 3.38 0.38 0.89 0.38 0.84 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.046 0.054 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.092 0.102 0.135 0.102 0.133 0.015 0.035 0.015 0.033 0.776 0.815 0.515 - View B NOTES 3 4 SYMBOL D2 E E1 e OK L L1 OP O P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.35 15.29 15.87 13.46 5.46 BSC 0.254 14.20 16.10 3.71 4.29 3.56 3.66 7.39 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.053 0.602 0.625 0.53 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.14 0.144 0.291 0.209 0.224 0.178 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) O P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC(R) outline TO-247 with exception of dimension c and Q Revision: 20-Apr-17 Document Number: 95542 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. (c) 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000