VS-HFA30PA60CPbF, VS-HFA30PA60C-N3
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Revision: 14-Jul-15 1Document Number: 94068
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HEXFRED®
Ultrafast Soft Recovery Diode, 2 x 15 A
FEATURES
• Ultrafast and ultrasoft recovery
• Very low IRRM and Qrr
• Designed and qualified according to
JEDEC®-JESD47
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
VS-HFA30PA60C... is a state of the art center tap ultrafast
recovery diode. Employing the latest in epitaxial
construction and advanced processing techniques it
features a superb combination of characteristics which
result in performance which is unsurpassed by any rectifier
previously available. With basic ratings of 600 V and 15 A
per leg continuous current, the VS-HFA30PA60C... is
especially well suited for use as the companion diode for
IGBTs and MOSFETs. In addition to ultrafast recovery time,
the HEXFRED® product line features extremely low values of
peak recovery current (IRRM) and does not exhibit any
tendency to “snap-off” during the tb portion of recovery. The
HEXFRED features combine to offer designers a rectifier
with lower noise and significantly lower switching losses in
both the diode and the switching transistor. These
HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The
HEXFRED VS-HFA30PA60C... is ideally suited for
applications in power supplies and power conversion
systems (such as inverters), motor drives, and many other
similar applications where high speed, high efficiency is
needed.
PRODUCT SUMMARY
Package TO-247AC
IF(AV) 2 x 15 A
VR600 V
VF at IF1.2 V
trr typ. 19 ns
TJ max. 150 °C
Diode variation Common cathode
TO-247AC
Base
common
cathode
Common
cathode
2
2
13
Anode
1
Anode
2
Available
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage VR600 V
Maximum continuous forward current per leg IFTC = 100 °C 15
A
per device 30
Single pulse forward current IFSM 150
Maximum repetitive forward current IFRM 60
Maximum power dissipation PD
TC = 25 °C 74 W
TC = 100 °C 29
Operating junction and storage temperature range TJ, TStg -55 to +150 °C
VS-HFA30PA60CPbF, VS-HFA30PA60C-N3
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Revision: 14-Jul-15 2Document Number: 94068
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ELECTRICAL SPECIFICATIONS PER LEG (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
breakdown voltage VBR IR = 100 μA 600 - -
V
Maximum forward voltage VFM
IF = 15 A
See fig. 1
-1.31.7
IF = 30 A - 1.5 2.0
IF = 15 A, TJ = 125 °C - 1.2 1.6
Maximum reverse
leakage current IRM
VR = VR rated See fig. 2 -1.010
μA
TJ = 125 °C, VR = 0.8 x VR rated - 400 1000
Junction capacitance CTVR = 200 V See fig. 3 - 25 50 pF
Series inductance LSMeasured lead to lead 5 mm from package body - 12 - nH
DYNAMIC RECOVERY CHARACTERISTICS PER LEG (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time
See fig. 5, 10
trr IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 19 -
nstrr1 TJ = 25 °C
IF = 15 A
dIF/dt = 200 A/μs
VR = 200 V
-4260
trr2 TJ = 125 °C - 70 120
Peak recovery current
See fig. 6
IRRM1 TJ = 25 °C - 4.0 6.0 A
IRRM2 TJ = 125 °C - 6.5 10
Reverse recovery charge
See fig. 7
Qrr1 TJ = 25 °C - 80 180 nC
Qrr2 TJ = 125 °C - 220 600
Peak rate of fall of
recovery current during tb
See fig. 8
dI(rec)M/dt1 TJ = 25 °C - 250 -
A/μs
dI(rec)M/dt2 TJ = 125 °C - 160 -
THERMAL-MECHANICAL SPECIFICATIONS PER LEG
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Lead temperature Tlead 0.063” from case (1.6 mm) for 10 s - - 300 °C
Junction to case,
single leg conduction RthJC
--1.7
K/W
Junction to case,
both legs conducting - - 0.85
Thermal resistance,
junction to ambient RthJA Typical socket mount - - 40
Thermal resistance,
case to heatsink RthCS Mounting surface, flat, smooth and greased - 0.25 -
Weight -6.0- g
-0.21- oz.
Mounting torque 6.0
(5.0) -12
(10)
kgf · cm
(lbf · in)
Marking device Case style TO-247AC (JEDEC) HFA30PA60C
VS-HFA30PA60CPbF, VS-HFA30PA60C-N3
www.vishay.com Vishay Semiconductors
Revision: 14-Jul-15 3Document Number: 94068
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Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current (Per Leg)
Fig. 2 - Typical Reverse Current vs.
Reverse Voltage (Per Leg)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage (Per Leg)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
I
F
- Instantaneous Forward Current (A)
V
FM
- Forward Voltage Drop (V)
1.0 1.2 1.4 1.8 2.21.6 2.0 2.4
1
10
100
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
I
R
- Reverse Current (µA)
V
R
- Reverse Voltage (V)
0 100 200 300 500400 600
0.01
0.1
1
10
100
1000
10 000
TJ = 125 °C
TJ = 150 °C
TJ = 25 °C
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
0 100 200 500400300 600
10
100
TJ = 25 °C
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Response
Single pulse
(thermal response)
PDM
t2
t1
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
VS-HFA30PA60CPbF, VS-HFA30PA60C-N3
www.vishay.com Vishay Semiconductors
Revision: 14-Jul-15 4Document Number: 94068
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt
(Per Leg)
Fig. 6 - Typical Recovery Current vs. dIF/dt (Per Leg)
Fig. 7 - Typical Stored Charge vs. dIF/dt (Per Leg)
Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt (Per Leg)
Fig. 9 - Reverse Recovery Parameter Test Circuit
t
rr
(ns)
dI
F
/dt (A/µs)
100 1000
0
100
80
20
40
60
IF = 30 A
IF = 15 A
IF = 5.0 A
VR = 200 V
TJ = 125 °C
TJ = 25 °C
I
RR
(A)
dI
F
/dt (A/µs)
100 1000
0
25
20
5
10
15
VR = 200 V
TJ = 125 °C
TJ = 25 °C
IF = 30 A
IF = 15 A
IF = 5.0 A
Q
rr
(nC)
dI
F
/dt (A/µs)
100 1000
0
800
400
600
200
I
F
= 30 A
I
F
= 15 A
I
F
= 5.0 A
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
dI
(rec)M
/dt (A/µs)
dI
F
/dt (A/µs)
100 1000
100
10 000
1000
IF = 30 A
IF = 15 A
IF = 5.0 A
VR = 200 V
TJ = 125 °C
TJ = 25 °C
IRFP250
D.U.T.
L = 70 μH
V
R
= 200 V
0.01 Ω
G
D
S
dIF/dt
adjust
VS-HFA30PA60CPbF, VS-HFA30PA60C-N3
www.vishay.com Vishay Semiconductors
Revision: 14-Jul-15 5Document Number: 94068
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 10 - Reverse Recovery Waveform and Definitions
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-HFA30PA60CPbF 25 500 Antistatic plastic tube
VS-HFA30PA60C-N3 25 500 Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95542
Part marking information TO-247ACPbF www.vishay.com/doc?95226
TO-247AC-N3 www.vishay.com/doc?95007
SPICE model www.vishay.com/doc?95182
Q
rr
0.5 I
RRM
dI
(rec)M
/dt
0.75 I
RRM
I
RRM
t
rr
t
b
t
a
I
F
dI
F
/dt
0
(1)
(2)
(3)
(4)
(5)
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve dened by trr
and IRRM
trr x IRRM
2
Qrr =
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
1- Vishay Semiconductors product
2- HEXFRED® family
3- Electron irradiated
4-Current rating (30 = 30 A)
5- PA = TO-247AC
Device code
51 32 4 6 7 8
HFVS- A 30 PA 60 C PbF
6
7- Circuit configuration
C = common cathode
8
- Voltage rating: (60 = 600 V)
- Environmental digit:
PbF = lead (Pb)-free and RoHS-compliant
-N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free
Outline Dimensions
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Revision: 20-Apr-17 1Document Number: 95542
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TO-247AC - 50 mils L/F
DIMENSIONS in millimeters and inches
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC® outline TO-247 with exception of dimension c and Q
SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.65 5.31 0.183 0.209 D2 0.51 1.35 0.020 0.053
A1 2.21 2.59 0.087 0.102 E 15.29 15.87 0.602 0.625 3
A2 1.17 1.37 0.046 0.054 E1 13.46 - 0.53 -
b 0.99 1.40 0.039 0.055 e 5.46 BSC 0.215 BSC
b1 0.99 1.35 0.039 0.053 Ø K 0.254 0.010
b2 1.65 2.39 0.065 0.094 L 14.20 16.10 0.559 0.634
b3 1.65 2.34 0.065 0.092 L1 3.71 4.29 0.146 0.169
b4 2.59 3.43 0.102 0.135 Ø P 3.56 3.66 0.14 0.144
b5 2.59 3.38 0.102 0.133 Ø P1 - 7.39 - 0.291
c 0.38 0.89 0.015 0.035 Q 5.31 5.69 0.209 0.224
c1 0.38 0.84 0.015 0.033 R 4.52 5.49 0.178 0.216
D 19.71 20.70 0.776 0.815 3 S 5.51 BSC 0.217 BSC
D1 13.08 - 0.515 - 4
0.10 AC
M M
E
(2)
(3)
(4)
(4)
(2) R/2
B
2 x R
S
D
See view B
2 x e
b4
3 x b
2 x b2
L
C
(5) L1
123
Q
D
A
A2
A
A
A1
C
Ø K BD
M M
A
(6) Φ P (Datum B)
Φ P1
D1 (4)
4
E1
0.01 BD
M M
View A - A
Thermal pad
D2
DDE E
CC
View B
(b1, b3, b5) Base metal
c1
(b, b2, b4)
Section C - C, D - D, E - E
(c)
Plating
Legal Disclaimer Notice
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Revision: 08-Feb-17 1Document Number: 91000
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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