DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada For additional information, please contact your local Sales Representative ON Semiconductor Website: http://onsemi.com DL126/D 11/01 DL126 REV 7 Small-Signal Device Data Bipolar Transistors, JFETs, and Diodes DL126/D Rev. 7, Nov-2001 SCILLC, 2001 Previous Edition 1997 "All Rights Reserved'' AnyLevel, Bullet-Proof, CHIPSCRETES, DUOWATT, E-FET, EASYCAP, EASY SWITCHER, ECLinPS, ECLinPS Lite, ECLinPS Plus, EpiBase, Epicap, EZFET, FULLPAK, GEMFET, GigaComm, ICePAK, L2TMOS, MCCS, MDTL, MECL, MEGAHERTZ, MHTL, MiniGate, MiniMOS, MiniMOSORB, Mosorb, MRTL, MTTL, Multi-Pak, NOCAP, ON-Demand, PHASESLICE, PowerBase, POWERSENSE, POWERTAP, Quake, SCANSWITCH, SENSEFET, SLEEPMODE, SMALLBLOCK, SMARTDISCRETES, SMARTswitch, SUPERBRIDGES, SuperLock, Surmetic, SWITCHMODE, Thermopad, Thermowatt, TMOS, TMOS & Design Device, TMOS Stylized, Unibloc, UNIT/PAK, Uniwatt, WaveFET, Z-Switch and ZIP R TRIM are trademarks of Semiconductor Components Industries, LLC (SCILLC). Thermal Clad is a trademark of the Bergquist Company. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. N. American Technical Support: 800-282-9855 Toll Free USA/Canada http://onsemi.com 2 Table of Contents Page Page Chapter 1. Selector Guide Chapter 2. Data Sheets Bipolar Transistors General-Purpose Transistors . . . . . . . . . . . . . . . . . . . . . 8 General-Purpose Multiple Transistors . . . . . . . . . . . . 11 Low Noise and Good hFE Linearity . . . . . . . . . . . . . . . 11 Darlington Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . 12 High Current Transistors . . . . . . . . . . . . . . . . . . . . . . . . 13 High Voltage Transistors . . . . . . . . . . . . . . . . . . . . . . . . 14 RF Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Switching Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Multiple Switching Transistors . . . . . . . . . . . . . . . . . . . 16 Digital Transistors (Bias Resistor Transistors - BRTs) . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Low Saturation Voltage Transistors . . . . . . . . . . . . . . . 20 Junctional Field-Effect Transistors - JFETs Low-Frequency/Low-Noise . . . . . . . . . . . . . . . . . . . . . 21 High-Frequency Amplifiers . . . . . . . . . . . . . . . . . . . . . . 21 Switches and Choppers . . . . . . . . . . . . . . . . . . . . . . . . 22 Tuning and Switching Diodes Abrupt Junction Tuning Diodes . . . . . . . . . . . . . . . . . . 23 Hyper-Abrupt Junction Tuning Diodes . . . . . . . . . . . . 23 Schottky Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Pin Switching Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 General Purpose Signal & Switching Diodes . . . . . . . 25 Bipolar Power Transistor Data Sheets . . . . . . . . . . . . 27 Chapter 3. Packaging and Case Outlines Tape & Reel Specifications . . . . . . . . . . . . . . . . . . . . 1093 Case Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1100 Surface Mount Packages - Recommended Footprint and Solderability Specifications . . . . . . 1109 Chapter 4. Index Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Device Index, Alpha Numeric . . . . . . . . . . . . . . . . . Sales Office & Representatives Listing . . . . . . . . . . Document Type Definitions . . . . . . . . . . . . . . . . . . . http://onsemi.com 3 1123 1126 1132 1133 http://onsemi.com 4 CHAPTER 1 Selector Guide http://onsemi.com 5 http://onsemi.com 6 Small-Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General-Purpose Transistors . . . . . . . . . . . . . . . . . 8 General-Purpose Multiple Transistors . . . . . . . . 11 Low Noise and Good hFE Linearity . . . . . . . . . . . 11 Darlington Transistors . . . . . . . . . . . . . . . . . . . . . . 12 High Current Transistors . . . . . . . . . . . . . . . . . . . . 13 High Voltage Transistors . . . . . . . . . . . . . . . . . . . . 14 RF Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Switching Transistors . . . . . . . . . . . . . . . . . . . . . . . 15 Multiple Switching Transistors . . . . . . . . . . . . . . . 16 Digital Transistors (Bias Resistor Transistors - BRTs) . . . . . . . . . . . . . . . . . . . . . . 17 Low Saturation Voltage Transistors . . . . . . . . . . . 20 Junctional Field-Effect Transistors - JFETs Low-Frequency/Low-Noise . . . . . . . . . . . . . . . . . 21 High-Frequency Amplifiers . . . . . . . . . . . . . . . . . . 21 Switches and Choppers . . . . . . . . . . . . . . . . . . . . 22 Tuning and Switching Diodes Abrupt Junction Tuning Diodes . . . . . . . . . . . . . . 23 Hyper-Abrupt Junction Tuning Diodes . . . . . . . . 23 Schottky Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Pin Switching Diodes . . . . . . . . . . . . . . . . . . . . . . . 25 General Purpose Signal & Switching Diodes . . . 25 This section highlights semiconductors that are the most popular and have a history of high usage for most applications. It covers a wide range of Small-Signal semi- conductors. A large selection of bipolar transistors, JFETs and diodes are available for surface mount and insertion assembly technology. Small-Signal Package Cross-Reference Table EIAJ IEC JEDEC SOT-23 Other SST3 SC-59 SOT-346 SMT3. MPAK SC-70 SOT-323 UMT3, CMPAK SC-75, SC-90 SOT-416 EMT3, SMPAK SC-89 SOT-490 EMT3 SC-74 SOT-457 SC-74A TSOP6 TSOP5 SMT6, SC-59-6 SMT5, SC-59-5 SC-88 SOT-363 UMT6, SC-70-6 SC-88A SOT-353 UMT5, SC-70-5 SC-77 SOD-123 SMD2 SC-76 SOD-323 UMD2, URP SC-79 SOD-523 EMD2, UFP SC-62 SOT-89 MPT3, UPAK SC-73 SOT-223 SC-43 SOT-54 TO-92 SPT SOT-666 EMT6 SOT-665 EMT5 SO-16 BOLD denotes an ON Semiconductor package name. http://onsemi.com 7 Bipolar Transistors General-Purpose Transistors NPN - BC449 BC449A BC447 MPS8099 MPSA06 2N4410 - BC546 BC546B BC487 BC487B MPSA05 - - BC182 BC182A BC182B BC237 BC237A BC237B BC237C BC337 BC337-16 BC337-25 BC337-40 BC550C - BC547A BC547B BC547C MPSA18 MPSA20 MPS2222A 2N4401 MPS6602 2N3904 BC548B BC548C - MPS2222 2N5088 2N5089 BC238B BC238C BC239C BC338-25 MPS4124 - MPS5172 MPS6521 PNP MPSL51 - - - MPS8599 MPSA56 - MPS6729 - BC556B - BC488B MPSA55 MPS2907A 2N5087 BC212 - BC212B - - BC307B BC307C BC327 BC327-16 BC327-25 BC327-40 BC560C BC557 BC557A BC557B BC557C - - - 2N4403 MPS6652 2N3906 BC558B BC558C BC213 - - - - - - - - MPS4126 - MPS6523 V(BR)CEO 100 100 100 80 80 80 80 80 65 65 60 60 60 60 50 50 50 50 45 45 45 45 45 45 45 45 45 45 45 45 45 45 40 40 40 40 40 30 30 30 30 30 25 25 25 25 25 25 25 25 25 IC mA Max Min 600 300 300 500 500 500 250 500 100 100 500 500 500 600 50 100 100 100 100 100 100 100 800 800 800 800 100 100 100 100 100 200 100 600 600 1000 200 100 100 100 600 50 50 100 100 100 800 200 200 100 100 40 50 120 50 100 100 60 50 120 180 60 160 100 100 250 120 120 200 120 120 200 380 100 100 160 250 380 120 120 180 380 500 40 100 100 50 100 200 420 80 100 350 450 200 380 380 160 120 120 100 300 hFE fT Max dB Max 250 460 220 460 300 - 400 250 450 450 400 400 - 300 800 500 260 500 800 220 460 800 630 250 400 630 800 800 220 450 800 - 400 300 300 - 300 450 800 - 300 - - 460 800 800 400 360 360 500 600 60 100 100 100 150 100 60 - 150 150 - - 100 200 40 200 (Typ) 200 200 150 150 150 150 210 (Typ) 260 (Typ) 260 (Typ) 260 (Typ) 250 (Typ) 150 150 150 150 100 125 300 200 100 250 300 (Typ) 300 200 250 50 50 150 150 150 150 170 170 - - - - - - - - - - 10 10 - - - - 2.0 10 10 10 10 10 10 10 - - - - 2.5 10 10 10 10 1.5 - - - - 5.0 10 10 10 - 3.0 2.0 10 10 4.0 - 5.0 4.0 - 3.0 Devices listed in bold italic are ON Semiconductor preferred devices. http://onsemi.com 8 NF MHz Min Package TO-226AA, TO 226AA TO-92 TO 92 Case 29-11 Page 1100 Page 896 213 213 213 847 855 50 843 242 242, 249 217 217 855 796 55 190, 193 190 190, 193 196 196 196, 199 196, 199 205, 202 205, 202 205, 202 205, 202 246, 255 249 242, 249 242, 249 242, 249 865 869 787 40, 45 837 29, 35 242, 249 242, 249 193 787 61 61 196 196 196 205 811 813 815 826 Bipolar Transistors General-Purpose Transistors V(BR)CEO IC mA Max Min MPSW55 60 500 MPS6729 80 MPSW06 MPSW56 - BSS64LT1 BC846ALT1 BC846BLT1 - - - MMBT2484LT1 MMBT6428LT1 - MMBT6429LT1 BC817-16LT1 BC817-25LT1 BC817-40LT1 - - - BC847ALT1 BC847BLT1 BC847CLT1 BC850BLT1 BC850CLT1 - - MMBT2222ALT1 MMBT3904LT1 - MMBT4401LT1 - BC848ALT1 BC848BLT1 BC848CLT1 BC849BLT1 BC849CLT1 - - - - - MMBT5088LT1 MMBT5089LT1 MMBT4124LT1 BSS63LT1 - - - BC856ALT1 BC856BLT1 MMBT2907ALT1 - - MMBT5087LT1 - - - - BC807-16LT1 BC807-25LT1 BC807-40LT1 - - - - - BC857ALT1 BC857BLT1 - - MMBT3906LT1 - MMBT4403LT1 - - - - - BC858ALT1 BC858BLT1 BC858CLT1 BC859BLT1 BC859CLT1 - - - NPN MPSW05 - PNP hFE fT NF Max MHz Min dB Max 60 - 50 250 500 50 250 - - 80 500 80 - 50 - 100 80 65 65 65 65 60 60 50 50 45 45 45 45 45 45 45 45 45 45 45 45 45 45 40 40 40 40 40 30 30 30 30 30 30 30 30 30 30 30 25 25 100 100 100 100 100 100 600 50 200 50 200 500 500 500 500 500 500 100 100 100 100 100 100 100 600 200 200 600 600 100 100 100 100 100 100 100 100 100 100 50 50 200 30 20 110 200 125 220 100 250 250 250 500 100 160 250 100 160 250 110 200 420 200 420 125 220 100 100 100 100 100 110 200 420 200 420 125 220 420 220 420 300 400 120 - - 220 450 250 475 300 - - - - 250 400 600 250 400 600 220 450 800 450 800 250 475 300 300 300 300 300 220 450 800 450 800 250 475 800 475 800 900 1200 360 50 60 100 100 100 100 200 - 100 40 100 100 100 100 100 100 100 100 100 100 100 100 100 100 300 200 250 250 200 100 100 100 100 100 100 100 100 100 100 5 50 300 -0.25 0.15 10 10 10 10 - 3.0 3.0 (Typ) 2.0 3.0 (Typ) - - - - - - 10 10 10 4.0 4.0 10 10 4.0 5.0 4.0 - - 10 10 10 4.0 4.0 10 10 10 4.0 4.0 3.0 2.0 5.0 Devices listed in bold italic are ON Semiconductor preferred devices. http://onsemi.com 9 Package Page 903, 920 TO-226AE (1-WATT) TO-92 C Case 29-10 29 10 Page 1100 TO-236AB, SOT-23 318 08 Case 318-08 Page 1101 843 903, 920 370 372 275 275 300 300 563 559 643 621 643 272 272 272 269 269 269 275 275 275 275 275 300 300 553 572 593 608 613 275 275 275 275 275 300 300 300 300 300 627 627 604 Bipolar Transistors General-Purpose Transistors NPN MSD601-RT1 MSD601-ST1 MSD602-RT1 MSC2712GT1 - - - - MSD1328-RT1 MSD1328-ST1 BC846AWT1 BC846BWT1 - - - MSD1819A-RT1 BC847AWT1 BC847BWT1 BC847CWT1 - - - MMBT2222AWT1 MMBT3904WT1 - BC848AWT1 BC848BWT1 BC848CWT1 - - MSC3930-BT1 2SC4617 - BC847BTT1 BC847CTT1 - - MMBT3904TT1 - MMBT2222ATT1 PNP - - - - MSA1162GT1 MSA1162YT1 MSB710-RT1 MSB709-RT1 - - - - BC856AWT1 BC856BWT1 MMBT2907AWT1 - - - - BC857BWT1 BC857CWT1 MSB1218A-RT1 - - MMBT3906WT1 - - - BC858AWT1 BC858BWT1 - - 2SA1774 - - BC857BTT1 BC857CTT1 - MMBT3906TT1 - V(BR)CEO IC mA Max Min 50 50 50 50 50 50 50 45 20 20 65 65 65 65 60 50 45 45 45 45 45 45 40 40 40 30 30 30 30 30 20 50 50 45 45 45 45 40 40 40 100 100 500 100 100 100 500 100 500 500 100 100 100 100 600 100 100 100 100 100 100 100 600 200 200 100 100 100 100 100 30 100 100 100 100 100 100 200 200 600 210 290 120 200 200 120 120 210 200 300 110 200 125 220 100 210 110 200 420 220 420 210 100 100 100 110 200 420 110 200 70 120 120 200 420 220 420 100 100 100 hFE fT Max dB Max 340 460 240 400 400 240 240 340 350 500 220 450 250 475 - 340 220 450 800 475 800 340 300 300 300 220 450 800 220 450 140 560 560 450 800 475 800 300 300 300 - - - - - - - - - - 100 100 100 100 200 - 100 100 100 100 100 - 300 300 250 100 100 100 100 100 150 180 (Typ) 140 (Typ) 100 100 100 100 300 250 300 - - - - - - - - - - 10 10 10 10 - - 10 10 4.0 10 10 - 4.0 5.0 4.0 10 10 4.0 10 10 - - - 10 4.0 10 10 5.0 4.0 4.0 Devices listed in bold italic are ON Semiconductor preferred devices. http://onsemi.com 10 NF MHz Min Package SC-59 Case 318D 318D-04 04 Page g 1102 SC-70, SC-70 SOT-323 Case 419-04 Page age 1104 0 SO SC SOT-416, SC-75, SC 90 SC-90 Case 463-01 Page 1106 Page 950 950 951 938 929 929 934 933 941 941 279 279 305 305 567 942 279 279 279 305 305 930 548 584 584 279 279 279 305 305 940 105 103 296 296 315 315 578 598 543 Bipolar Transistors General-Purpose Multiple Transistors Device BC846BDW1T1 BC856BDW1T1 BC846BPDW1T1 BC847BDW1T1 BC847CDW1T1 BC857BDW1T1 BC857CDW1T1 BC847BPDW1T1 BC847CPDW1T1 MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 BC848BDW1T1 BC848CDW1T1 BC858BDW1T1 BC858CDW1T1 BC848BPDW1T1 BC848CPDW1T1 MMPQ2222A MMPQ2369 MMPQ3467 MMPQ3904 MMPQ3906 MMPQ6700 Type V(BR)CEO Dual NPN Dual PNP Dual Complimentary Dual NPN Dual NPN Dual PNP Dual PNP Dual Complimentary Dual Complimentary Dual NPN Dual PNP Dual Complimentary Dual NPN Dual NPN Dual PNP Dual PNP Dual Complimentary Dual Complimentary Quad NPN Quad NPN Quad PNP Quad NPN Quad PNP Quad Complimentary 65 65 65 45 45 45 45 45 45 40 40 40 30 30 30 30 30 30 40 15 40 40 40 40 IC mA Max Min 100 100 100 100 100 100 100 100 100 200 200 200 100 100 100 100 100 100 500 500 1000 200 200 200 200 220 200 200 420 220 420 200 420 100 100 100 200 420 220 420 200 420 100 40 20 75 75 70 hFE fT NF Max MHz Min dB Max 450 475 475 290 520 290 520 290 520 300 300 300 290 250 290 520 290 520 300 - - - - - 100 100 100 100 100 100 100 100 100 300 250 250 100 100 100 100 100 100 200 450 190 (Typ) 250 200 200 10 10 10 10 4.0 10 10 10 4.0/10 5.0 4.0 5.0/4.0 10 4.0 10 10 10 4.0/10 - - - - - - Package SC-88, SOT-363 SC SO Case 419B-02 Page 1105 SO-16 Case 751B-05 C 751B 05 Page 1107 Page 283 310 288 283 283 310 310 288 288 464 470 475 283 283 310 310 288 288 712 714 716 718 720 722 Devices listed in bold italic are ON Semiconductor preferred devices. Bipolar Transistors Low Noise and Good hFE Linearity NPN - BC550C PNP 2N5087 Min Max MHz Min dB Max 50 50 250 800 40 2.0 55 246, 255 hFE fT NF 45 100 380 800 250 (Typ) 2.5 MPSA18 - 45 200 500 - 100 1.5 2N5088 - 30 50 350 - 50 3.0 2N5089 - 25 50 450 - 50 2.0 MPS6523 25 100 300 600 - 3.0 - - - - - MMBT5087LT1 25 30 60 50 45 50 50 50 50 200 200 50 400 300 250 250 500 250 - 900 - - - - 50 5 - 100 100 40 2.0 3.0 3.0 3.0 (Typ) 3.0 (Typ) 2.0 MPS6521 MMBT5089LT1 MMBT5088LT1 MMBT2484LT1 MMBT6428LT1 MMBT6429LT1 - BC560C IC mA Max V(BR)CEO Devices listed in bold italic are ON Semiconductor preferred devices. 1. NF: Noise Figure at RS = 2.0 k, IC = 200 A, VCE = 5.0 Volts. f = 30 Hz to 15 kHz. http://onsemi.com 11 Package Page 865 TO-226AA,, TO-92 Case 29-11 C 29 11 Page 1100 (Note 1.) O SO TO-236AB, SOT-23 Case 318-08 318 08 Page 1101 61 61 826 627 627 559 643 643 621 Bipolar Transistors Darlington Transistors NPN PNP V(BR)CEO IC mA Max Min Max MHz Min dB Max hFE fT NF Package Page MPSW45A - 50 1000 25K 150K 100 1.5 912 MPSW45 - 40 1000 25K 150K 100 1.5 912 - MPSW63 30 500 10K - 125 1.5 - MPSW64 30 1000 20K - 125 1.5 MPSW13 - 30 1000 10K - 125 1.5 MPSW14 - 30 1000 20K - 125 1.5 MPSA29 BC372 BC373 MPSA27 BC618 - - - 100 100 80 60 55 40 40 40 30 30 30 500 1000 1000 500 1000 500 500 500 500 500 1000 10K 10K 10K 10K 10K 10K 20K 30K 20K 10K 30K - 160K 160K - 50K - 200K 300K - - - 125 100 100 - 150 - - 125 125 125 200 (Typ) 1.5 1.1 1.1 1.5 1.1 1.5 1.5 1.5 1.5 1.5 1.0 30 300 20K - 125 - 80 1000 2000 - - - MPSA77 - - 2N6427 2N6426 MPSA14 MPSA13 BC517 MMBTA14LT1 BSP52T1 MPSA75 - - MPSA64 MPSA63 - MMBTA64LT1 - Devices listed in bold italic are ON Semiconductor preferred devices. http://onsemi.com 12 923 TO-226AE (1-WATT) TO-92 TO 92 Case 29-10 Page 1100 TO-226AA, TO 226AA, TO TO-92 92 Case 29-11 Page 1100 TO-236AB, SOT-23 Case 318-08 Page 1101 SOT-223 Case 318E-04 Page 1103 923 906 906 878 211 211 875, 887 258 887 92 92 860, 884 860, 884 237 663, 672 368 Bipolar Transistors High Current Transistors (> 500 mA) NPN PNP V(BR)CEO IC mA Max Min Max hFE fT BC489 BC490 80 1000 60 400 BC639 BC489A BC489B BC639-16 MPS651 BC637 BC640 BC490A BC490B BC640-16 MPS751 BC638 80 80 80 80 60 60 500 1000 1000 1000 2000 500 40 100 160 100 75 40 160 250 400 250 - 160 BC635 BC636 45 500 40 250 BC368 BC369 20 1000 60 - MPSW01A MPSW51A 40 1000 50 MPSW01 MPSW51 30 1000 MMBTA06LT1 MMBTA56LT1 80 BCP56T1 BCP56-10T1 BCP56-16T1 PZT2222AT1 - BCP53T1 BCP53-10T1 BCP53-16T1 - PZT2907AT1 PZT651T1 BCP68T1 MHz Min 200/150 (Typ) 60 100 100 60 75 - 200/150 NF dB Max Package Page 0.3/0.5 227, 232 0.5 0.5 0.5 0.5 0.5 0.5 263, 266 227, 232 227, 232 263, 266 822 263, 266 TO-226AA, TO 226AA, TO-92 TO 92 Case 29-11 Page 1100 P - 263, 266 65 0.5 208 - 50 - 900, 917 50 - 50 - 500 100 - 100 - 80 80 80 40 60 1000 1000 1000 600 600 40 63 100 100 100 250 160 250 300 300 50 (Typ) 50 (Typ) 50 (Typ) 300 200 - - - - - PZT751T1 60 2000 75 - 75 - BCP69T1 25 1000 85 375 60 (Typ) - 324, 327 - NSL35TT1 35 1000 100 - - - 1043 - NSL12TT1 12 1000 100 - - - - NSL5TT1 5.0 1000 100 - - - - 80 1000 63 160 130 (Typ) - BCX56-10R1 (Typ) TO-226AE (1-WATT) TO-92 Case 29-10 Page 1100 TO-236AB, SOT-23 Case 318-08 Page 1101 SOT 223 SOT-223 Case 318E-04 Page 1103 SOT-416, SC-75, SC-90 Case 463-01 Page 1106 http://onsemi.com 13 661, 671 321, 319 321, 319 321, 319 1058 1061 1064, 1066 1039 1047 329 SOT-89 Case 1213-02 Page 1108 Devices listed in bold italic are ON Semiconductor preferred devices. 900, 917 Bipolar Transistors High Voltage Transistors (> 100 V) NPN - PNP BF493S MPSW42 - - MPSW92 IC mA Max Min Max MHz Min 350 500 40 - 50 20 349 300 500 40 - 50 0.5 909 300 500 25 - 50 0.5 V(BR)CEO hFE fT NF dB Max BF393 - 300 500 40 - 50 - 2N5551 - 160 600 80 250 100 8.0 150 600 60 240 100 8.0 500 500 500 500 600 500 500 500 500 500 600 500 500 1000 30 40 40 50 80 50 15 15 40 25 80 50 50 40 200 - - - - 300 - - - - 250 - 150 - 40 50 50 60 100 40 40 40 50 50 - 100 - 70 - 0.5 0.5 - 0.15 0.3 - - - - - 8.0 - - - 2N6517 MPSA42 2N5401 2N6520 - BF422 2N5550 2N6515 MMBT6517LT1 - MMBTA42LT1 - MMBT5551LT1 - PZTA96ST1 BSP19AT1 MPSA92 BF423 - 350 300 300 250 160 250 350 350 300 300 160 150 450 350 PZTA42T1 PZTA92T1 300 500 40 - 50 - - BF720T1 BSP16T1 BF721T1 300 250 1000 100 30 50 150 - 15 60 - - - 300 150 40 - - - - MSD42WT1 - - - MMBT6520LT1 - MMBTA92LT1 - MMBT5401LT1 - - MSB92WT1 300 500 25 - 50 - - MSB92AWT1 300 500 120 200 50 - Devices listed in bold italic are ON Semiconductor preferred devices. http://onsemi.com 14 Package Page 926 TO-226AE (1-WATT) TO-92 TO 92 Case 29-10 Page 1100 TO-226AA, TO-92 Case 29-11 29 11 Page 1100 TO-236AB, SOT-23 Case 318-08 318 08 Page 1101 SOT-223 318E 04 Case 318E-04 Page 1103 340 81 65 97 881 889 343, 346 81 97 647 651 668 674 635 631 1073 366 1068, 1071 364 352, 355 949 SC 70, SOT-323 SOT 323 SC-70, Case 419-04 Page 1104 935 935 Bipolar Transistors RF Transistors NPN PNP V(BR)CEO IC mA Max Min Max MHz Min hFE fT Cap pF Max Package Page MPSH10 - 25 - 60 - 650 CRB = 0.65 892 BF959 - 20 100 40 - 600 CRE = 0.65 (Typ) 358 MPSH17 - 15 - 25 250 800 CCB = 0.9 894 MPS918 - 15 50 20 - 600 COBO = 1.7 MPS5179 - 12 50 25 250 900 CCB = 1.0 MPS3563 - 12 50 20 200 600 COBO = 1.7 853 MMBTH10LT1 - 25 - 60 - 650 CCB = 0.7 677 MMBTH10-4LT1 - 25 - 120 240 800 CCB = 0.7 MMBT918LT1 - 15 50 20 - 600 COBO = 1.7 MSD2714AT1 - 25 - 90 180 650 CCB = 0.7 MSC2295-BT1 - 20 30 70 140 150 CRE = 1.5 MSC2295-CT1 - 20 30 110 220 150 CRE = 1.5 MSC3130T1 - 10 50 75 400 1400 - NSF2250WT1 - 15 50 120 250 2000 COBO = 1.2 Toff ns Max 28 18 18 - 5.0 285 110 TO-226AA, TO-92 Case 29-11 Page 1100 TO-236AB, SOT-23 318 08 Case 318-08 Page 1101 853 820 677 659 945 937 SC-59 Case 318D-04 Page 1102 937 939 SC-70, SOT-323 Case 419-04 Page 1104 1030 Devices listed in bold italic are ON Semiconductor preferred devices. Bipolar Transistors Switching Transistors NPN MPS3646 MPS2369 MPS2369A 2N4401 2N3904 P2N2222A - PNP - - - 2N4403 2N3906 - P2N2907A V(BR)CEO 15 15 15 40 40 40 60 IC mA Max Min Max MHz Min 300 200 200 600 200 600 600 30 40 40 100 100 100 100 120 120 120 300 300 300 300 350 - - 200 250 300 200 hFE fT Devices listed in bold italic are ON Semiconductor preferred devices. http://onsemi.com 15 Package TO-226AA, TO 226AA, TO-92 TO 92 Case 29-11 Page 1100 Page 801 793 793 40, 45 29, 35 1049 1054 Bipolar Transistors Switching Transistors NPN MMBT3904LT1 - MMBT4401LT1 - - PNP Min 40 40 40 40 12 200 200 600 600 80 40 - MMBT3906WT1 MMBT3904TT1 - IC mA Max - MMBT3906LT1 - MMBT4403LT1 MMBT3640LT1 MMBT3904WT1 - V(BR)CEO - MMBT3906TT1 hFE fT Max MHz Min Toff ns Max 100 100 100 100 30 300 300 300 300 120 200 250 250 200 500 5.0 4.0 - - 35 200 100 300 300 5.0 40 200 100 300 250 4.0 40 200 100 300 300 5.0 40 200 100 300 250 4.0 fT Toff ns Max Package TO 236AB, SOT 23 TO-236AB, SOT-23 Case 318-08 Page 1101 Page 572 593 608 613 569 584 SC-70, SOT-323 Case 419-04 Page 1104 584 578 SOT-416, SC-75, SC-90 Case 463-01 Page 1106 578 Devices listed in bold italic are ON Semiconductor preferred devices. Bipolar Transistors Multiple Switching Transistors Device Type V(BR)CEO IC mA Max Min Max MHz Min hFE MBT3904DW1T1 Dual NPN 40 200 100 300 300 5.0 MBT3906DW1T1 Dual PNP 40 200 100 300 250 4.0 MBT3946DW1T1 Dual Complimentary 40 200 100 300 250 5.0/4.0 MMPQ2369 Quad NPN 15 500 40 - 450 15 (Typ) MMPQ3904 Quad NPN 40 200 75 - 250 136 (Typ) MMPQ3906 Quad PNP 40 200 75 - 200 155 (Typ) MMPQ6700 Quad Complimentary 40 200 70 - 200 155 (Typ) Devices listed in bold italic are ON Semiconductor preferred devices. http://onsemi.com 16 Package Page 464 SC-88, SC 88, SOT-363 SOT 363 Case 419B-02 Page 1105 464 464 714 718 SO-16 Case 751B 751B-05 05 Page 1107 720 722 Bipolar Transistors C (OUT) Digital Transistors (Bias Resistor Transistors) B (IN) These devices include bias resistors on the semiconductor chip with the transistor. See the BRT diagram for orientation of resistors. NPN DTC114E DTC124E DTC144E DTC143T DTC123E DTC143Z DTC114Y DTD113E DTC143E DTC114T MUN2211T1 MUN2212T1 MUN2213T1 MUN2214T1 MUN2215T1 MUN2216T1 MUN2230T1 MUN2231T1 MUN2232T1 MUN2233T1 MUN2234T1 MUN2236T1 MUN2237T1 MUN2240T1 MUN2241T1 DTC144TT1 MMUN2211LT1 MMUN2212LT1 MMUN2213LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 MMUN2235LT1 MMUN2238LT1 MMUN2241LT1 PNP DTA114E DTA124E DTA144E DTA143T DTA123E DTA143Z DTA114Y DTB113E DTA143E DTA114T MUN2111T1 MUN2112T1 MUN2113T1 MUN2114T1 MUN2115T1 MUN2116T1 MUN2130T1 MUN2131T1 MUN2132T1 MUN2133T1 MUN2134T1 MUN2136T1 MUN2137T1 MUN2140T1 - DTA144TT1 MMUN2111LT1 MMUN2112LT1 MMUN2113LT1 MMUN2114LT1 MMUN2115LT1 MMUN2116LT1 MMUN2130LT1 MMUN2131LT1 MMUN2132LT1 MMUN2133LT1 MMUN2134LT1 - - - V(BR)CEO IC mA Max 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 hFE R2 R1 R2 Min 35 60 80 160 8 80 80 3 15 160 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 160 160 160 35 60 80 80 160 160 3.0 8.0 15 80 80 80 160 160 10K 22K 47K 4.7K 2.2K 4.7K 10K 1K 4.7K 10K 10K 22K 47K 10K 10K 4.7K 1.0K 2.2K 4.7K 4.7K 22K 100K 47K 47K 100K 47K 10K 22K 47K 10K 10K 4.7K 1.0K 2.2K 4.7K 4.7K 22K 2.2K 2.2K 100K 10K 22K 47K 2.2K 47K 47K 1K 4.7K 10K 22K 47K 47K 1.0K 2.2K 4.7K 47K 47K 100K 22K 10K 22K 47K 47K 1.0K 2.2K 4.7K 47K 47K 47K Devices listed in bold italic are ON Semiconductor preferred devices. http://onsemi.com 17 R1 Package E (GND) Page 402 383 402, TO-226AA, TO 226AA TO-92 TO 92 Case 29-11 Page 1100 SC-59 Case 318D-04 318D 04 Page 1102 967,, 956 96 419, 400 TO-236AB, SOT-23 Case 318-08 318 08 Page 1101 741 734 741, Bipolar Transistors C (OUT) Digital Transistors (Bias Resistor Transistors) B (IN) These devices include bias resistors on the semiconductor chip with the transistor. See the BRT diagram for orientation of resistors. NPN MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 MUN5232T1 MUN5233T1 MUN5234T1 MUN5235T1 MUN5236T1 MUN5237T1 DTC114EET1 DTC124EET1 DTC144EET1 DTC114YET1 DTC114TET1 DTC143TET1 DTC123EET1 DTC143EET1 DTC143ZET1 DTC124XET1 DTC123JET1 DTC115EET1 DTC144WET1 PNP MUN5111T1 MUN5112T1 MUN5113T1 MUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1 MUN5131T1 MUN5132T1 MUN5133T1 MUN5134T1 MUN5135T1 MUN5136T1 MUN5137T1 DTA114EET1 DTA124EET1 DTA144EET1 DTA114YET1 DTA114TET1 DTA143TET1 DTA123EET1 DTA143EET1 DTA143ZET1 DTA124XET1 DTA123JET1 DTA115EET1 DTA144WET1 V(BR)CEO IC mA Max 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 hFE R2 R1 R2 Min 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 80 35 60 80 80 160 160 8.0 15 80 80 80 80 80 10K 22K 47K 10K 10K 4.7K 1.0K 2.2K 4.7K 4.7K 22K 2.2K 100K 47K 10K 22K 47K 10K 10K 4.7K 2.2K 4.7K 4.7K 22K 2.2K 100K 47K 10K 22K 47K 47K 1.0K 2.2K 4.7K 47K 47K 47K 100K 22K 10K 22K 47K 47K 2.2K 4.7K 4.7K 47K 47K 100K 22K Devices listed in bold italic are ON Semiconductor preferred devices. http://onsemi.com 18 R1 Package SC-70,, SOT-323 C Case 419-04 419 04 Page 1104 SOT-416, SOT 416 SC-75, SC 75 SC-90 Case 463-01 Page g 1106 06 E (GND) Page 1006, 988 410, 0, 390 C (OUT) Dual Digital Transistors (Bias Resistor Transistors) B (IN) These devices include bias resistors on the semiconductor chip with the transistor. See the BRT diagram for orientation of resistors. NPN PNP V(BR)CEO IC mA Max MUN5211DW1T1 MUN5212DW1T1 MUN5213DW1T1 MUN5214DW1T1 MUN5215DW1T1 MUN5216DW1T1 MUN5230DW1T1 MUN5231DW1T1 MUN5232DW1T1 MUN5233DW1T1 MUN5234DW1T1 MUN5235DW1T1 MUN5236DW1T1 MUN5237DW1T1 MUN5111DW1T1 MUN5112DW1T1 MUN5113DW1T1 MUN5114DW1T1 MUN5115DW1T1 MUN5116DW1T1 MUN5130DW1T1 MUN5131DW1T1 MUN5132DW1T1 MUN5133DW1T1 MUN5134DW1T1 MUN5135DW1T1 MUN5136DW1T1 MUN5137DW1T1 50 50 50 50 50 50 50 50 50 50 50 50 50 50 100 100 100 100 100 100 100 100 100 100 100 100 100 100 hFE R1 R2 R1 R2 Min 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 80 10K 22K 47K 10K 10K 4.7K 1.0K 2.2K 4.7K 4.7K 22K 2.2K 100K 47K 10K 22K 47K 47K 1.0K 2.2K 4.7K 47K 47K 47K 100K 22K E (GND) Package Page SC-88, SOT-363 Duals Case 419B-02 Page 1105 998 978 998, Devices listed in bold italic are ON Semiconductor preferred devices. C (OUT) Combinational Digital Transistors (Bias Resistor Transistors) B (IN) These devices include bias resistors on the semiconductor chip with the transistor. See the BRT diagram for orientation of resistors. Type V(BR)CEO IC mA Max Dual Complimentary 50 50 50 50 50 50 50 50 50 50 50 50 100 100 100 100 100 100 100 100 100 100 100 100 Dual Common Emitter 50 UMA6NT1 Dual Common Emitter UMC2NT1 Dual Common Base Collector UMC3NT1 UMC5NT1 Device MUN5311DW1T1 MUN5312DW1T1 MUN5313DW1T1 MUN5314DW1T1 MUN5315DW1T1 MUN5316DW1T1 MUN5330DW1T1 MUN5331DW1T1 MUN5332DW1T1 MUN5333DW1T1 MUN5334DW1T1 MUN5335DW1T1 UMA4NT1 R2 hFE Q1 Q2 35 60 80 80 160 160 3.0 8.0 15 80 80 80 MUN5211 MUN5212 MUN5213 MUN5214 MUN5215 MUN5216 MUN5230 MUN5231 MUN5232 MUN5233 MUN5234 MUN5235 MUN5111 MUN5112 MUN5113 MUN5114 MUN5115 MUN5116 MUN5130 MUN5131 MUN5132 MUN5133 MUN5134 MUN5135 100 160 MUN5211 MUN5211 50 100 160 MUN5212 MUN5212 50 100 60 MUN5211 MUN5211 Dual Common Base Collector 50 100 35 4.7K/10K MUN5213 Dual Common Base Collector 50 100 20 MUN2240 MUN2240 Min Devices listed in bold italic are ON Semiconductor preferred devices. http://onsemi.com 19 R1 E (GND) Package Page SC-88, SC 88 SOT-363 SOT 363 Case 419B-02 Page 1105 1015 1077 1077 SC-88A,, SOT-353 SC70 5 SC70-5 Case 419A-02 Page 1107 1081 1081 1081 Bipolar Transistors Low Saturation Voltage Transistors NPN MMBT2132T1 MMBT489LT1 PNP MMBT2131T1 - IC mA Max Min 30 700 30 V(BR)CEO hFE fT Max MHz Min VCE(sat) Max 150 - - 0.25 1000 300 900 100 0.20 - MMBT589LT1 30 1000 100 300 100 0.25 - MBT35200MT1 35 2000 100 400 100 0.15 - MMBT6589T1 30 1000 100 300 100 0.25 Package Page SC-74, SC-59 Single Case 318F-02 Page 1103 540, 537 618 TO-236AB, SOT-23 Case 318-08 Page 1101 639 460 TSOP-6 TSOP 6 Single Case 318G-02 655 Page 1104 - - NSL35TT1 NSL12TT1 35 12 1000 1000 100 100 - - Devices listed in bold italic are ON Semiconductor preferred devices. http://onsemi.com 20 - - 0.37 0.35 1043 SOT-416, SC-75, SC-90 Case 463-01 Page 1106 1039 Junctional Field-Effect Transistors JFETs Low-Frequency/Low-Noise Re Yfs Re Yos @ 1 kHz @ 1 kHz mmho Min mho Max - - 2N5460 2N5461 2N5462 - - - 1.0 1.5 1.0 1.5 2.0 3.0 3.0 4.5 MMBF5460LT1 BFR30LT1 BFR31LT1 NPN 2N5457 2N5458 - - - BF245A BF245B BF256A - VGS(off) Volts IDSS mA Ciss pF Max Crss pF Max VGSS VGDO Volts Min Min Max Min Max 50 50 75 75 75 - - - 7.0 7.0 7.0 7.0 7.0 - - - 3.0 3.0 2.0 2.0 2.0 - - - 25 25 40 40 40 30 30 30 0.5 1.0 0.75 1.0 1.8 0.5 0.5 0.5 6.0 7.0 6.0 7.5 9.0 8.0 8.0 7.5 1.0 2.0 1.0 2.0 4.0 2.0 6.0 3.0 5.0 9.0 5.0 9.0 16 6.5 15 7.0 1.0 75 7.0 2.0 40 0.8 6.0 1.0 5.0 - 1.0 40 5.0 1.5 25 - 5.0 4.0 10 - 1.5 20 5.0 1.5 25 - 2.5 1.0 5.0 PNP Package TO-226AA, TO-92 TO 226AA TO 92 Case 29-11 Page 1100 Page 69 69 72 72 72 332 332 337 521 TO-236AB, SOT-23 Case 318-08 Page 1101 361 Package Page 361 Devices listed in bold italic are ON Semiconductor preferred devices. High-Frequency Amplifiers mho Max Ciss pF Max Crss pF Max NF dB Max VGSS VGDO Volts Min Min Max Min Max 1.6 200 7.0 3.0 - 25 - 8.0 2.0 20 771 3.5 100 5.0 1.0 4.0 25 2.0 6.0 8.0 20 76 J309 12 (Typ) 250 (Typ) 7.5 2.5 1.5 (Typ) 25 1.0 4.0 12 30 J310 Re Yfs Re Yos mmho Min MPF102 2N5486 NPN Device VGS(off) Volts IDSS mA 12 (Typ) 250 (Typ) 7.5 2.5 1.5 (Typ) 25 2.0 6.5 24 60 MMBF5457LT1 1.0 50 7.0 3.0 4.0 25 0.5 6.0 1.0 5.0 MMBF5484LT1 3.0 50 5.0 1.0 3.0 25 0.3 3.0 1.0 5.0 MMBFJ309LT1 10 250 5.0 2.5 4.0 25 1.0 4.0 12 30 MMBFJ310LT1 8.0 250 5.0 2.5 4.0 25 2.0 6.5 24 60 MMBFU310LT1 10 250 5.0 2.5 4.0 25 2.5 6.0 24 60 MMBF4416LT1 4.5 50 4.0 0.8 2.0 30 - 6.0 5.0 15 Devices listed in bold italic are ON Semiconductor preferred devices. http://onsemi.com 21 TO-226AA, TO 226AA, TO-92 TO 92 Case 29-11 Page 1100 TO-236AB, TO-236AB SOT-23 Case 318-08 P Page 1101 428 428 518 524 531 531 534 513 Junctional Field-Effect Transistors (continued) JFETs (continued) Switches and Choppers NPN PNP RDS(on) Max Ciss pF Max Crss pF Max VGSS VGDO Volts Min Min Max Min VGS(off) Volts IDSS mA Max ton ns Max toff ns Max Package Page J112 - 50 28 5.0 35 1.0 5.0 5.0 - - - MPF4392 - 60 10 3.5 30 - - 25 75 15 35 425 776 2N5639 - 60 10 4.0 30 - 25 - - - 90 MPF4393 - 100 10 3.5 30 - 5.0 30 15 55 776 J110 - 18 - - 25 0.5 4.0 10 - - - 2N5555 - 150 5.0 1.2 25 - - 15 - 5.0 15 2N5638 - 30 10 4.0 30 - - 50 - 4.0 5.0 J111 - 30 28 5.0 35 3.0 10 20 - - - J113 - 100 28 5.0 35 0.5 3.0 2.0 - - - MPF4856 - 25 18 8.0 40 4.0 10 50 - 6.0 25 MMBF4391LT1 - 30 10 3.5 30 4.0 10 50 150 - - MMBF4392LT1 - 60 10 3.5 30 2.0 5.0 25 75 - - MMBF4393LT1 - 100 10 3.5 30 0.5 3.0 5.0 30 - - - MMBFJ175LT1 125 11 5.5 30 3.0 6.0 7.0 60 - - - MMBFJ177LT1 300 - - 30 0.8 2.5 1.5 20 - - 8.0 (Typ) 12 (Typ) Devices listed in bold italic are ON Semiconductor preferred devices. http://onsemi.com 22 TO-226AA, O 6 , TO-92 O 9 C Case 29-11 Page 1100 TO-236AB, SOT-23 Case 318-08 318 08 Page 1101 422 85 90 425 425 781 509 509 509 529 530 Tuning and Switching Diodes Tuning Diodes - Abrupt Junction CT @ VR = 4.0 V, 1.0 MHz VR Volts Device pF Min pF Nominal pF Max Cap Ratio Min Q@4 4.0 0V 50 MHz Typ MV2101 30 6.1 6.8 7.5 2.5 450 MV2105 30 13.5 15 16.5 2.5 400 MV2109 30 29.7 33 36.3 2.5 200 LV2205 25 13 - 17 2.0 200 LV2209 MMBV2105LT1 MMBV2107LT1 MMBV2109LT1 MMBV2101LT1 MMBV2103LT1 MMBV2108LT1 MMBV3102LT1 25 26.4 - 39.6 2.5 150 30 30 30 30 30 30 30 13.5 19.8 29.7 6.1 9.0 24.3 20 15 22 33 6.8 10 - - 16.5 24.2 36.3 7.5 11 29.7 25 2.5 2.5 2.5 2.5 2.5 2.5 4.5 400 350 200 450 400 200 200 MMVL2101T1 30 6.1 6.8 7.5 2.5 400 (Min) MMVL2105T1 30 13.5 15 16.5 2.5 350 (Min) Package Page 685 685 TO-226AC, TO 226AC, TO TO-92 92 2-Lead Case 182-06 Page 1101 TO-236AB, SOT-23 Case 318-08 318 08 Page 1101 685 685 685 685 685 685 685 685 685 688 755 SOD-323 Case 477-02 Page 1106 758 Package Page Devices listed in bold italic are ON Semiconductor preferred devices. Tuning Diodes - Hyper-Abrupt Junction Device MV209 VR Volts 30 CT (f = 1.0 MHz) pF Min pF Max Volts 26 32 3.0 Cap Ratio Min Max 5.0 6.5 Type Volts Q 3.0 V Min 3.0/25 200 Single MV104 32 37 42 3.0 2.5 2.8 - 100 Single MMBV105GLT1 MMBV109LT1 MMBV409LT1 MMBV809LT1 30 30 20 20 1.5 26 26 4.5 2.8 32 32 6.1 25 3.0 3.0 2.0 4.0 5.0 1.5 1.8 6.5 6.5 1.9 2.6 3.0/25 3.0/25 3.0/8.0 2.0/8.0 Single MMBV432LT1 14 43 48 2.0 1.5 2.0 - 200 200 200 300 100@ 2.0V MMBV609LT1 20 26 32 3.0 1.8 2.4 3/8 250 MMVL105GT1 MMVL809T1 MMVL3102T1 MMVL109T1 MMVL409T1 30 20 30 30 20 1.5 4.5 20 26 26 2.8 6.1 25 32 32 25 2 3 3 3 4.0 1.8 4.5 5.0 1.5 6.5 2.6 - 6.5 1.9 3.0/25 2.0/8.0 3.0/25 3.0/25 3.0/8.0 200 300 200 200 200 Devices listed in bold italic are ON Semiconductor preferred devices. http://onsemi.com 23 683 TO-226AC, TO 226AC TO TO-92 92 2-Lead Case 182-06 Page 1101 681 683 694 700 Single Single Single Single Dual Common Cathode TO-236AB, SOT-23 Case 318-08 318 08 Page 1101 Single Single Single 696 698 Single Single 1028 SOD-323 Case 477-02 P Page 1106 751 769 761 753 767 Schottky Diodes Device VR Volts CT @ V pF Max IR @ V Volts VF Volts Max nA Max Volts Type Package Page MBD701 70 1.0 20 1.0 200 35 Single MBD301 30 1.5 15 0.6 200 25 Single MBD101 7.0 1.0 0 0.6 250 3.0 Single BAT54T1 30 10 1.0 0.4 2000 25 Single MMSD301T1 30 1.5 15 0.6 200 25 Single MMSD701T1 70 1.0 20 1.0 200 35 Single BAT54HT1 30 10 1.0 0.4 2000 25 Single MMDL101T1 7 1.0 0 0.6 250 3.0 Single MMDL301T1 30 1.5 15 0.6 200 25 Single MMDL770T1 70 1.0 20 1.0 200 35 Single RB751V40T1 BAS40LT1 BAS40-04LT1 BAS40-06LT1 BAS70LT1 BAS70-04LT1 BAT54LT1 BAT54ALT1 BAT54SLT1 MMBD701LT1 MMBD301LT1 MMBD101LT1 MMBD452LT1 MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1 BAT54WT1 BAT54SWT1 MMBD330T1 MMBD770T1 MMBD717LT1 MMBD352WT1 30 2.5 1.0 0.37 500 30 Single 1074 40 40 40 70 70 30 30 30 70 30 7.0 30 7.0 7.0 7.0 7.0 30 30 30 70 20 7.0 5.0 5.0 5.0 2.0 2.0 10 10 10 1.0 1.5 1.0 1.5 1.0 1.0 1.0 1.0 10 10 1.5 1.0 2.5 1.0 1.0 1.0 1.0 0 0 1.0 1.0 1.0 20 15 0 15 0 0 0 0 1.0 1.0 15 20 1.0 0 0.5 0.5 0.5 0.75 0.75 0.4 0.4 0.4 1.0 0.6 0.6 0.6 0.6 0.6 0.6 0.6 0.4 0.4 0.6 1.0 0.37 0.6 1000 1000 1000 100 100 2000 2000 2000 200 200 250 200 250 250 250 250 2000 2000 200 200 1000 250 25 25 25 50 50 25 25 25 35 25 3.0 25 3.0 3.0 3.0 3.0 25 25 25 35 10 3.0 Single Dual Series Dual Common Anode Single Dual Series Single Dual Common Anode Dual Series Single Single Single Dual Series Dual Series Dual Series Dual Common Cathode Dual Common Anode Single Dual Series Single Single Dual Common Anode Dual Series 135 131 133 139 137 150 141 153 458 454 447 496 492 492 492 492 162 156 489 489 505 494 MBD54DWT1 30 1.0 0 0.32 2000 25 Dual Series MBD330DWT1 30 1.5 0 0.4 200 25 Dual Series MBD770DWT1 70 1.0 0 0.5 200 35 Dual Series MBD110DWT1 7.0 1.0 0 0.6 250 3.0 Dual Series Devices listed in bold italic are ON Semiconductor preferred devices. http://onsemi.com 24 458 TO-226AC, TO-92 2-Lead Case 182-06 Page 1101 454 447 159 SOD-123 SOD 123 Case 425-04 Page 1105 725 725 144 702 SOD-323 Case 477-02 Page 1106 TO-236AB, SOT-23 Case 318-08 318 08 Page 1101 SC-70,, SOT-323 C 419 04 Case 419-04 Page 1104 704 708 456 449 SC-88, SOT-363 Case 419B-02 Page 1105 449 449 Switching Diodes PIN Switching Diodes Device MPN3700 CT @ V VR Volts Min Volts Resistance Max IR A Max Type pF Max 200 1.0 20 1.0 0.1 Single MPN3404 20 2.0 15 0.85 0.1 Single MSD6100 100 1.5 0.0 - 0.1 Dual Common Cathode MSD6150 70 8.0 0.0 - 0.1 Dual Common Anode MMBV3700LT1 200 1.0 20 1.0 0.1 Single MMBV3401LT1 35 1.0 20 0.7 0.1 Single MMVL3700T1 200 1.0 20 1.0 0.1 Single MMVL3401T1 35 1.0 20 0.7 0.1 Package Page 692 TO-226AC, TO 226AC TO TO-92 92 2-Lead Case 182-06 Page 1101 785 952 TO-226AA, TO-92 Case 29-11 Page 1100 954 692 TO-236AB, SOT-23 Case 318-08 Page 1101 690 765 Single SOD 323 SOD-323 Case 477-02 Page 1106 763 Package Page Devices listed in bold italic are ON Semiconductor preferred devices. General-Purpose Signal and Switching Diodes Device BAS21LT1 BAS21SLT1 MMBD914LT1 BAS16LT1 MMBD6050LT1 BAL99LT1 BAS116LT1 MMBD7000LT1 MMBD2836LT1 MMBD2838LT1 BAV70LT1 BAV99LT1 BAW56LT1 MMBD6100LT1 BAV74LT1 MMBD2835LT1 MMBD2837LT1 BAV199LT1 VF VR Min Volts IR Max A Min Volts Max Volts CT Max pF trr Max ns Type 250 250 100 75 70 70 75 100 75 75 70 70 70 70 50 35 35 70 0.1 1.0 5.0 1.0 0.1 2.5 0.0 1.0 0.1 0.1 5.0 2.5 2.5 0.1 0.1 0.1 0.1 0.005 - - - - 0.85 - - 0.75 - - - - - 0.85 - - - - 1.0 1.0 1.0 1.0 1.1 1.0 0.9 1.1 1.0 1.0 1.0 1.0 1.0 1.1 1.0 1.0 1.0 0.9 5.0 5.0 4.0 2.0 2.5 1.5 2.0 1.5 4.0 4.0 1.5 1.5 2.0 2.5 2.0 4.0 4.0 2.0 50 50 4.0 6.0 4.0 6.0 3000 4.0 4.0 4.0 6.0 4.0 6.0 4.0 4.0 4.0 4.0 3000 Single Dual Series Single Single Single Single Single Dual Series Dual Common Anode Dual Common Cathode Dual Common Cathode Dual Series Dual Common Anode Dual Common Cathode Dual Common Cathode Dual Common Anode Dual Common Cathode Dual Series http://onsemi.com 25 TO-236AB, SOT-23 Case 318-08 318 08 Page 1101 127 129 507 113 498 107 109 503 485 487 167 178 183 500 176 485 487 165 General-Purpose Signal and Switching Diodes Device M1MA151AT1 M1MA151KT1 M1MA152AT1 M1MA152KT1 M1MA151WAT1 M1MA151WKT1 M1MA152WAT1 M1MA152WKT1 BAS16WT1 M1MA141KT1 M1MA142KT1 M1MA174T1 M1MA142WKT1 M1MA142WAT1 BAW56WT1 BAV70WT1 BAV99WT1 BAV99RWT1 M1MA141WKT1 M1MA141WAT1 DAP202U MMSD914T1 VR Min Volts IR Max A 40 40 80 80 40 40 80 80 75 40 80 100 80 80 70 70 70 70 40 40 - 100 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.02 0.1 0.1 5.0 0.1 0.1 2.5 5.0 2.5 2.5 0.1 0.1 0.1 5.0 VF trr Max ns Type Min Volts Max Volts CT Max pF - - - - - - - - - - - - - - - - - 10 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.25 1.2 1.2 1.0 1.2 1.2 1.0 1.0 1.0 1.0 1.2 1.2 1.2 1.0 2.0 2.0 2.0 2.0 15 2.0 15 2.0 2.0 2.0 2.0 4.0 2.0 15 2.0 1.5 1.5 1.5 2.0 15 3.5 4.0 3.0 3.0 3.0 3.0 10 3.0 10 3.0 6.0 3.0 3.0 4.0 3.0 10 6.0 6.0 6.0 6.0 3.0 10 10 4.0 Single Single Single Single Dual Common Anode Dual Common Cathode Dual Common Anode Dual Common Cathode Single Single Single Single Dual Common Cathode Dual Common Anode Dual Common Anode Dual Common Cathode Dual Series Dual Series Dual Common Cathode Dual Common Anode Dual Common Anode Single MMSD71RKT1 80 0.5 100 1.2 2.0 4.0 Single MMSD103T1 250 100 100 1.0 5.0 50 Single MMSD4148T1 BAS16HT1 BAS20HT1 BAS21HT1 MMDL914T1 MMDL6050T1 BAS16TT1 DA121TT1 DAP222 BAW56TT1 DAN222 BAV70TT1 100 5.0 10 1.0 4.0 4.0 Single 75 200 250 100 70 75 80 80 70 80 70 1.0 0.1 0.1 5.0 0.1 1.0 1.0 0.1 2.5 0.1 5.0 - 1.0 - - 0.85 - 1.0 1.0 1.1 1.0 - - - - 1.2 1.0 1.2 1.0 2.0 5.0 5.0 4.0 2.5 2.0 2.0 3.5 2.0 3.5 1.5 6.0 50 50 4.0 4.0 6.0 6.0 4.0 6.0 4.0 6.0 Single Single Single Single Single Single Single Dual Common Anode Dual Common Anode Dual Common Cathode Dual Common Cathode Devices listed in bold italic are ON Semiconductor preferred devices. http://onsemi.com 26 Package SC 59 SC-59 Case 318D-04 Page 1102 SC-70, SC 70 SOT-323 SOT 323 Case 419-04 Page 1104 Page 437 439 437 439 441 443 441 443 119 431 431 445 435 433 188 173 180 180 435 433 380 732 730 SOD 123 SOD-123 Case 425-04 Page 1105 SOD-323 Case 477-02 477 02 Page 1106 SOT-416, SC-75, SC-90 SC 90 Case 463-01 Page 1106 723 728 111 122 125 710 706 115 374 380 185 378 169 CHAPTER 2 Data Sheets http://onsemi.com 27 http://onsemi.com 28 2N3903, 2N3904 2N3903 is a Preferred Device General Purpose Transistors NPN Silicon http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current - Continuous IC 200 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watts mW/C -55 to +150 C Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W Operating and Storage Junction Temperature Range TJ, Tstg 2 BASE 1 EMITTER STYLE 1 TO-92 CASE 29 STYLE 1 1 2 3 MARKING DIAGRAMS THERMAL CHARACTERISTICS (Note 1.) Characteristic 2N 3903 YWW Y WW 1. Indicates Data in addition to JEDEC Requirements. 2N 3904 YWW = Year = Work Week ORDERING INFORMATION Device Package Shipping 2N3903 TO-92 5000 Units/Box 2N3903RLRM TO-92 2000/Ammo Pack 2N3904 TO-92 5000 Units/Box 2N3904RLRA TO-92 2000/Tape & Reel 2N3904RLRE TO-92 2000/Tape & Reel 2N3904RLRM TO-92 2000/Ammo Pack 2N3904RLRP TO-92 2000/Ammo Pack 2N3904RL1 TO-92 2000/Tape & Reel 2N3904ZL1 TO-92 2000/Ammo Pack Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 December, 2000 - Rev. 3 29 Publication Order Number: 2N3903/D 2N3903, 2N3904 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage (Note 2.) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 - Vdc Collector-Base Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO 60 - Vdc Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO 6.0 - Vdc IBL - 50 nAdc ICEX - 50 nAdc 20 40 35 70 50 100 30 60 15 30 - - - - 150 300 - - - - - - 0.2 0.3 0.65 - 0.85 0.95 250 300 - - OFF CHARACTERISTICS Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) ON CHARACTERISTICS DC Current Gain (Note 2.) (IC = 0.1 mAdc, VCE = 1.0 Vdc) hFE 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) Collector-Emitter Saturation Voltage (Note 2.) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc VCE(sat) Base-Emitter Saturation Voltage (Note 2.) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VBE(sat) - Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) fT 2N3903 2N3904 MHz Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo - 4.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo - 8.0 pF 1.0 1.0 8.0 10 0.1 0.5 5.0 8.0 50 100 200 400 1.0 40 - - 6.0 5.0 td - 35 ns tr - 35 ns ts - - 175 200 ns tf - 50 ns Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) k hie 2N3903 2N3904 Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) X 10-4 hre 2N3903 2N3904 Small-Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe 2N3903 2N3904 Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hoe Noise Figure (IC = 100 Adc, VCE = 5.0 Vdc, RS = 1.0 k , f = 1.0 kHz) - NF 2N3903 2N3904 mhos dB SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time (VCC = 3.0 Vdc, VBE = 0.5 Vdc, IC = 10 mAdc, IB1 = 1.0 mAdc) (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc) 2N3903 2N3904 Fall Time 2. Pulse Test: Pulse Width 300 s; Duty Cycle 2%. http://onsemi.com 30 2N3903, 2N3904 DUTY CYCLE = 2% 300 ns +3 V +10.9 V 275 +10.9 V DUTY CYCLE = 2% 10 k -0.5 V +3 V t1 10 < t1 < 500 s 275 10 k 0 CS < 4 pF* < 1 ns CS < 4 pF* 1N916 -9.1 V < 1 ns * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS TJ = 25C TJ = 125C 10 5000 Q, CHARGE (pC) CAPACITANCE (pF) 2000 5.0 Cibo 3.0 Cobo 2.0 1.0 0.1 VCC = 40 V IC/IB = 10 3000 7.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 1000 700 500 100 70 50 20 30 40 QT 300 200 QA 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 REVERSE BIAS VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 3. Capacitance Figure 4. Charge Data http://onsemi.com 31 200 2N3903, 2N3904 500 t r, RISE TIME (ns) tr @ VCC = 3.0 V 50 30 20 7 5 40 V 100 70 50 30 20 15 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC/IB = 20 7 5 200 5.0 7.0 10 20 30 50 70 100 Figure 5. Turn-On Time Figure 6. Rise Time IC/IB = 10 30 20 10 7 5 30 50 70 100 200 IC/IB = 10 30 20 7 5 20 IC/IB = 20 100 70 50 10 5.0 7.0 10 VCC = 40 V IB1 = IB2 300 200 IC/IB = 20 50 200 500 ts = ts - 1/8 tf IB1 = IB2 IC/IB = 10 2.0 3.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 100 70 1.0 1.0 IC, COLLECTOR CURRENT (mA) 500 300 200 10 2.0 V td @ VOB = 0 V VCC = 40 V IC/IB = 10 300 200 t f , FALL TIME (ns) TIME (ns) 100 70 10 t s , STORAGE TIME (ns) 500 IC/IB = 10 300 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. Storage Time Figure 8. Fall Time 200 TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = 5.0 Vdc, TA = 25C, Bandwidth = 1.0 Hz) 12 SOURCE RESISTANCE = 200 IC = 0.5 mA 8 6 SOURCE RESISTANCE = 1.0 k IC = 50 A 4 0 0.1 SOURCE RESISTANCE = 500 IC = 100 A 0.2 0.4 1.0 2.0 f = 1.0 kHz 12 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 10 2 14 SOURCE RESISTANCE = 200 IC = 1.0 mA IC = 1.0 mA IC = 0.5 mA 10 IC = 50 A 8 IC = 100 A 6 4 2 4.0 10 20 40 0 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k OHMS) Figure 9. Figure 10. http://onsemi.com 32 40 100 2N3903, 2N3904 h PARAMETERS (VCE = 10 Vdc, f = 1.0 kHz, TA = 25C) 100 hoe, OUTPUT ADMITTANCE ( mhos) h fe , CURRENT GAIN 300 200 100 70 50 30 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 50 20 10 5 2 1 10 0.1 0.2 Figure 11. Current Gain h re , VOLTAGE FEEDBACK RATIO (X 10 -4 ) h ie , INPUT IMPEDANCE (k OHMS) 10 5.0 2.0 1.0 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 5.0 10 Figure 12. Output Admittance 20 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 10 0.1 Figure 13. Input Impedance 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) Figure 14. Voltage Feedback Ratio http://onsemi.com 33 2N3903, 2N3904 h FE, DC CURRENT GAIN (NORMALIZED) TYPICAL STATIC CHARACTERISTICS 2.0 TJ = +125C VCE = 1.0 V +25C 1.0 0.7 -55C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 70 50 100 200 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 15. DC Current Gain 1.0 TJ = 25C 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) Figure 16. Collector Saturation Region 1.0 TJ = 25C VBE(sat) @ IC/IB =10 V, VOLTAGE (VOLTS) 1.0 0.8 VBE @ VCE =1.0 V 0.6 0.4 VCE(sat) @ IC/IB =10 VC FOR VCE(sat) 0 -55C TO +25C -0.5 -55C TO +25C -1.0 +25C TO +125C VB FOR VBE(sat) -1.5 0.2 0 +25C TO +125C 0.5 COEFFICIENT (mV/ C) 1.2 1.0 2.0 5.0 10 20 50 100 -2.0 200 0 20 40 60 80 100 120 140 160 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 17. "ON" Voltages Figure 18. Temperature Coefficients http://onsemi.com 34 180 200 2N3906 Preferred Device General Purpose Transistors PNP Silicon http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 40 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector Current - Continuous IC 200 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Power Dissipation @ TA = 60C PD 250 mW Total Device Dissipation @ TC = 25C Derate above 25C PD Watts mW/C -55 to +150 C Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W TJ, Tstg 1 EMITTER STYLE 1 TO-92 CASE 29 STYLE 1 1 2 1.5 12 Operating and Storage Junction Temperature Range 2 BASE 3 MARKING DIAGRAMS 2N 3906 YWW THERMAL CHARACTERISTICS (Note 1.) Characteristic Y WW = Year = Work Week 1. Indicates Data in addition to JEDEC Requirements. ORDERING INFORMATION Device Package Shipping 2N3906 TO-92 5000 Units/Box 2N3906RLRA TO-92 2000/Tape & Reel 2N3906RLRE TO-92 2000/Tape & Reel 2N3906RLRM TO-92 2000/Ammo Pack 2N3906RLRP TO-92 2000/Ammo Pack 2N3906RL1 TO-92 2000/Tape & Reel 2N3906ZL1 TO-92 2000/Ammo Pack Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 October, 2001 - Rev. 0 35 Publication Order Number: 2N3906/D 2N3906 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage (Note 2.) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 - Vdc Collector-Base Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO 40 - Vdc Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO 5.0 - Vdc IBL - 50 nAdc ICEX - 50 nAdc 60 80 100 60 30 - - 300 - - - - 0.25 0.4 0.65 - 0.85 0.95 250 - - 4.5 OFF CHARACTERISTICS Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) ON CHARACTERISTICS (Note 2.) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) hFE Collector-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc VCE(sat) Base-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VBE(sat) - Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) fT Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) MHz pF Cibo - 10 pF Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hie 2.0 12 k Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hre 0.1 10 Small-Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe 100 400 Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hoe 3.0 60 Noise Figure (IC = 100 Adc, VCE = 5.0 Vdc, RS = 1.0 k, f = 1.0 kHz) NF - 4.0 X 10-4 - mhos dB SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (VCC = 3.0 Vdc, VBE = 0.5 Vdc, IC = 10 mAdc, IB1 = 1.0 mAdc) td - 35 ns tr - 35 ns (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc) ts - 225 (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc) tf - 75 2. Pulse Test: Pulse Width 300 s; Duty Cycle 2%. http://onsemi.com 36 ns ns 2N3906 3V 275 < 1 ns 275 10 k +0.5 V 10 k 0 CS < 4 pF* 10.6 V 3V < 1 ns +9.1 V 300 ns DUTY CYCLE = 2% CS < 4 pF* 1N916 10 < t1 < 500 s DUTY CYCLE = 2% 10.9 V t1 * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS 10 5000 7.0 3000 2000 Cobo 5.0 Q, CHARGE (pC) CAPACITANCE (pF) TJ = 25C TJ = 125C Cibo 3.0 1000 700 500 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE BIAS (VOLTS) VCC = 40 V IC/IB = 10 300 200 100 70 50 20 30 40 QT 1.0 2.0 3.0 Figure 3. Capacitance t f , FALL TIME (ns) TIME (ns) 15 V 30 20 40 V 5.0 7.0 10 20 30 50 70 100 IC/IB = 20 100 70 50 30 20 IC/IB = 10 10 2.0 V 7 5 td @ VOB = 0 V 2.0 3.0 VCC = 40 V IB1 = IB2 300 200 tr @ VCC = 3.0 V 1.0 200 500 IC/IB = 10 300 200 10 7 5 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) Figure 4. Charge Data 500 100 70 50 QA 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Turn-On Time Figure 6. Fall Time http://onsemi.com 37 200 2N3906 TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = -5.0 Vdc, TA = 25C, Bandwidth = 1.0 Hz) 12 SOURCE RESISTANCE = 200 IC = 1.0 mA 4.0 f = 1.0 kHz SOURCE RESISTANCE = 200 IC = 0.5 mA 3.0 SOURCE RESISTANCE = 2.0 k IC = 50 A 2.0 SOURCE RESISTANCE = 2.0 k IC = 100 A 1.0 0 0.1 0.2 0.4 IC = 1.0 mA 10 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 5.0 1.0 2.0 4.0 10 f, FREQUENCY (kHz) 20 40 IC = 0.5 mA 8 6 4 IC = 50 A 2 IC = 100 A 0 100 0.1 0.2 40 0.4 1.0 2.0 4.0 10 20 Rg, SOURCE RESISTANCE (k OHMS) Figure 7. 100 Figure 8. h PARAMETERS (VCE = -10 Vdc, f = 1.0 kHz, TA = 25C) 100 hoe, OUTPUT ADMITTANCE ( mhos) h fe , DC CURRENT GAIN 300 200 100 70 50 70 50 30 20 10 7 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5 5.0 7.0 10 0.1 0.2 Figure 9. Current Gain h re , VOLTAGE FEEDBACK RATIO (X 10 -4 ) h ie , INPUT IMPEDANCE (k OHMS) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 Figure 10. Output Admittance 20 0.3 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 5.0 7.0 10 0.1 Figure 11. Input Impedance 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 Figure 12. Voltage Feedback Ratio http://onsemi.com 38 2N3906 h FE, DC CURRENT GAIN (NORMALIZED) TYPICAL STATIC CHARACTERISTICS 2.0 TJ = +125C VCE = 1.0 V +25C 1.0 0.7 -55C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 20 30 50 70 100 200 VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 13. DC Current Gain 1.0 TJ = 25C 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 IB, BASE CURRENT (mA) 0.7 1.0 2.0 3.0 5.0 7.0 10 1.0 TJ = 25C V, VOLTAGE (VOLTS) 0.8 V , TEMPERATURE COEFFICIENTS (mV/ C) Figure 14. Collector Saturation Region VBE(sat) @ IC/IB = 10 VBE @ VCE = 1.0 V 0.6 0.4 VCE(sat) @ IC/IB = 10 0.2 0 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 1.0 0.5 VC FOR VCE(sat) 0 +25C TO +125C -55C TO +25C -0.5 +25C TO +125C -1.0 -55C TO +25C VB FOR VBE(sat) -1.5 -2.0 0 Figure 15. "ON" Voltages 20 40 60 80 100 120 140 IC, COLLECTOR CURRENT (mA) 160 Figure 16. Temperature Coefficients http://onsemi.com 39 180 200 ON Semiconductor General Purpose Transistors 2N4401 NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current -- Continuous IC 600 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watts mW/C TJ, Tstg -55 to +150 C Symbol Max Unit Operating and Storage Junction Temperature Range 1 2 3 CASE 29-11, STYLE 1 TO-92 (TO-226AA) COLLECTOR 3 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W 2 BASE 1 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 -- Vdc Collector-Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO 60 -- Vdc Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) V(BR)EBO 6.0 -- Vdc Base Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) IBEV -- 0.1 Adc Collector Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) ICEX -- 0.1 Adc OFF CHARACTERISTICS 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 June, 2001 - Rev. 0 40 Publication Order Number: 2N4401/D 2N4401 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Characteristic ON Min Max 20 40 80 100 40 -- -- -- 300 -- Unit CHARACTERISTICS(1) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 150 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc) hFE -- Collector-Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) Collector-Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) VCE(sat) -- -- 0.4 0.75 Vdc Base-Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) Base-Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) VBE(sat) 0.75 -- 0.95 1.2 Vdc 250 -- SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) fT MHz Collector-Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Ccb -- 6.5 pF Emitter-Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Ceb -- 30 pF Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hie 1.0 15 Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hre 0.1 8.0 Small-Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe 40 500 Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hoe 1.0 30 mhos (VCC = 30 Vdc, VBE = 2.0 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) td -- 15 ns tr -- 20 ns (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) ts -- 225 ns tf -- 30 ns k ohms X 10-4 -- SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. SWITCHING TIME EQUIVALENT TEST CIRCUITS +30 V +30 V +16 V 0 -2.0 V 1.0 to 100 s, DUTY CYCLE 2.0% 200 +16 V 0 < 2.0 ns 1.0 k CS* < 10 pF -14 V 1.0 to 100 s, DUTY CYCLE 2.0% < 20 ns 1.0 k -4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope Figure 1. Turn-On Time Figure 2. Turn-Off Time http://onsemi.com 41 200 CS* < 10 pF 2N4401 TRANSIENT CHARACTERISTICS 25C 100C 30 10 7.0 5.0 20 3.0 Q, CHARGE (nC) CAPACITANCE (pF) Cobo 10 7.0 5.0 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 REVERSE VOLTAGE (VOLTS) 20 30 QT 2.0 1.0 0.7 0.5 0.3 0.2 Ccb 3.0 2.0 0.1 VCC = 30 V IC/IB = 10 0.1 50 QA 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) Figure 3. Capacitances 100 IC/IB = 10 70 70 50 t, TIME (ns) 20 t, TIME (ns) tr @ VCC = 30 V tr @ VCC = 10 V td @ VEB = 2.0 V td @ VEB = 0 20 10 7.0 7.0 20 30 50 70 100 200 300 5.0 500 tf 30 10 10 VCC = 30 V IC/IB = 10 tr 50 30 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Turn-On Time Figure 6. Rise and Fall Times 300 300 500 100 ts = ts - 1/8 tf IB1 = IB2 IC/IB = 10 to 20 VCC = 30 V IB1 = IB2 70 50 t f , FALL TIME (ns) 200 t s, STORAGE TIME (ns) 500 Figure 4. Charge Data 100 5.0 300 100 70 IC/IB = 20 30 20 IC/IB = 10 10 50 7.0 30 10 20 30 50 70 100 200 300 5.0 500 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. Storage Time Figure 8. Fall Time http://onsemi.com 42 300 500 2N4401 SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VCE = 10 Vdc, TA = 25C; Bandwidth = 1.0 Hz 10 10 IC = 1.0 mA, RS = 150 IC = 500 A, RS = 200 IC = 100 A, RS = 2.0 k IC = 50 A, RS = 4.0 k 8.0 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 8.0 f = 1.0 kHz RS = OPTIMUM RS = SOURCE RS = RESISTANCE 6.0 4.0 IC = 50 A IC = 100 A IC = 500 A IC = 1.0 mA 6.0 4.0 2.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 f, FREQUENCY (kHz) 10 20 50 0 100 50 Figure 9. Frequency Effects 100 200 500 1.0k 2.0k 5.0k 10k 20k RS, SOURCE RESISTANCE (OHMS) 50k 100k Figure 10. Source Resistance Effects h PARAMETERS VCE = 10 Vdc, f = 1.0 kHz, TA = 25C This group of graphs illustrates the relationship between hfe and other "h" parameters for this series of transistors. To obtain these curves, a high-gain and a low-gain unit were selected from the 2N4401 lines, and the same units were used to develop the correspondingly numbered curves on each graph. 300 hfe , CURRENT GAIN 200 100 70 2N4401 UNIT 1 2N4401 UNIT 2 50 30 20 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 hie , INPUT IMPEDANCE (OHMS) 50k 2N4401 UNIT 1 2N4401 UNIT 2 20k 10k 5.0k 2.0k 1.0k 500 5.0 7.0 10 0.1 0.2 IC, COLLECTOR CURRENT (mA) Figure 11. Current Gain 1.0 2.0 3.0 5.0 7.0 10 Figure 12. Input Impedance 100 7.0 5.0 hoe, OUTPUT ADMITTANCE ( mhos) h re , VOLTAGE FEEDBACK RATIO (X 10-4 ) 0.5 0.7 IC, COLLECTOR CURRENT (mA) 10 2N4401 UNIT 1 2N4401 UNIT 2 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.3 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 50 20 10 5.0 2N4401 UNIT 1 2N4401 UNIT 2 2.0 1.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 13. Voltage Feedback Ratio Figure 14. Output Admittance http://onsemi.com 43 5.0 7.0 10 2N4401 STATIC CHARACTERISTICS h FE, NORMALIZED CURRENT GAIN 3.0 VCE = 1.0 V VCE = 10 V 2.0 TJ = 125C 1.0 25C 0.7 0.5 -55C 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA) 30 50 70 100 200 300 500 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 15. DC Current Gain 1.0 TJ = 25C 0.8 0.6 IC = 1.0 mA 10 mA 100 mA 500 mA 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (mA) 2.0 3.0 5.0 7.0 10 20 30 50 Figure 16. Collector Saturation Region +0.5 TJ = 25C VBE(sat) @ IC/IB = 10 VOLTAGE (VOLTS) 0.8 0.6 0 COEFFICIENT (mV/ C) 1.0 VBE @ VCE = 10 V 0.4 0.2 0 VCE(sat) @ IC/IB = 10 0.1 0.2 0.5 50 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) VC for VCE(sat) -0.5 -1.0 -1.5 -2.0 100 200 -2.5 0.1 0.2 500 Figure 17. "On" Voltages VB for VBE 0.5 50 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 Figure 18. Temperature Coefficients http://onsemi.com 44 500 ON Semiconductor General Purpose Transistors 2N4403 PNP Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 40 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector Current -- Continuous IC 600 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watt mW/C TJ, Tstg -55 to +150 C Operating and Storage Junction Temperature Range 1 2 3 CASE 29-11, STYLE 1 TO-92 (TO-226AA) COLLECTOR 3 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W 2 BASE 1 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 -- Vdc Collector-Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO 40 -- Vdc Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) V(BR)EBO 5.0 -- Vdc Base Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) IBEV -- 0.1 Adc Collector Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) ICEX -- 0.1 Adc OFF CHARACTERISTICS 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 June, 2001 - Rev. 0 45 Publication Order Number: 2N4403/D 2N4403 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Characteristic Min Max 30 60 100 100 20 -- -- -- 300 -- -- -- 0.4 0.75 0.75 -- 0.95 1.3 200 -- Unit ON CHARACTERISTICS DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 150 mAdc, VCE = 2.0 Vdc)(1) (IC = 500 mAdc, VCE = 2.0 Vdc)(1) hFE -- Collector-Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VCE(sat) Base-Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VBE(sat) Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) fT MHz Collector-Base Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Ccb -- 8.5 pF Emitter-Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Ceb -- 30 pF Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hie 1.5 k 15 k Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hre 0.1 8.0 Small-Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe 60 500 Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hoe 1.0 100 mhos (VCC = 30 Vdc, VBE = +2.0 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) td -- 15 ns tr -- 20 ns (VCC = 30 Vdc, IC = 150 mAdc, IB1 = 15 mA, IB2 = 15 mA) ts -- 225 ns tf -- 30 ns ohms X 10-4 -- SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. SWITCHING TIME EQUIVALENT TEST CIRCUIT -30 V -30 V +2 V 0 -16 V 200 < 2 ns +14 V 0 1.0 k 10 to 100 s, DUTY CYCLE = 2% 200 < 20 ns CS* < 10 pF -16 V 1.0 k 1.0 to 100 s, DUTY CYCLE = 2% +4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope Figure 1. Turn-On Time Figure 2. Turn-Off Time http://onsemi.com 46 CS* < 10 pF 2N4403 TRANSIENT CHARACTERISTICS 25C 100C 30 Ceb VCC = 30 V IC/IB = 10 3.0 10 7.0 Ccb 5.0 2.0 Q, CHARGE (nC) CAPACITANCE (pF) 20 10 7.0 5.0 1.0 0.7 0.5 QT 0.3 QA 0.2 2.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE VOLTAGE (VOLTS) 20 0.1 30 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) Figure 3. Capacitances 100 IC/IB = 10 70 70 VCC = 30 V IC/IB = 10 50 50 20 t r , RISE TIME (ns) tr @ VCC = 30 V tr @ VCC = 10 V td @ VBE(off) = 2 V td @ VBE(off) = 0 30 30 20 10 10 7.0 7.0 10 20 30 50 70 100 200 300 5.0 500 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Turn-On Time Figure 6. Rise Time 200 IC/IB = 10 t s, STORAGE TIME (ns) t, TIME (ns) 500 Figure 4. Charge Data 100 5.0 300 100 IC/IB = 20 70 50 IB1 = IB2 ts = ts - 1/8 tf 30 20 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) Figure 7. Storage Time http://onsemi.com 47 300 500 300 500 2N4403 SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VCE = -10 Vdc, TA = 25C; Bandwidth = 1.0 Hz 10 10 8 8 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) f = 1 kHz IC = 1.0 mA, RS = 430 IC = 500 A, RS = 560 IC = 50 A, RS = 2.7 k IC = 100 A, RS = 1.6 k 6 4 2 6 4 2 RS = OPTIMUM SOURCE RESISTANCE 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 IC = 50 A 100 A 500 A 1.0 mA 0 100 50 100 200 f, FREQUENCY (kHz) Figure 8. Frequency Effects 500 1k 2k 5k 10k 20k RS, SOURCE RESISTANCE (OHMS) 50k Figure 9. Source Resistance Effects h PARAMETERS VCE = -10 Vdc, f = 1.0 kHz, TA = 25C This group of graphs illustrates the relationship between hfe and other "h" parameters for this series of transistors. To obtain these curves, a high-gain and a low-gain unit were selected from the 2N4403 lines, and the same units were used to develop the correspondingly-numbered curves on each graph. 100k 700 50k hfe , CURRENT GAIN 500 300 200 2N4403 UNIT 1 2N4403 UNIT 2 100 70 50 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 20k 10k 5k 2k 1k 500 100 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc) Figure 10. Current Gain Figure 11. Input Impedance 20 5.0 7.0 10 500 10 2N4403 UNIT 1 2N4403 UNIT 2 5.0 2.0 1.0 0.5 0.2 0.1 2N4403 UNIT 1 2N4403 UNIT 2 200 hoe, OUTPUT ADMITTANCE ( mhos) h re , VOLTAGE FEEDBACK RATIO (X 10-4 ) 30 hie , INPUT IMPEDANCE (OHMS) 1000 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 100 50 20 10 2.0 1.0 0.1 5.0 7.0 10 2N4403 UNIT 1 2N4403 UNIT 2 5.0 IC, COLLECTOR CURRENT (mAdc) 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mAdc) Figure 12. Voltage Feedback Ratio Figure 13. Output Admittance http://onsemi.com 48 5.0 7.0 10 2N4403 STATIC CHARACTERISTICS h FE, NORMALIZED CURRENT GAIN 3.0 VCE = 1.0 V VCE = 10 V 2.0 TJ = 125C 25C 1.0 -55C 0.7 0.5 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA) 30 50 70 100 200 300 500 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 14. DC Current Gain 1.0 0.8 0.6 IC = 1.0 mA 10 mA 100 mA 500 mA 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (mA) 2.0 3.0 5.0 7.0 10 20 30 50 Figure 15. Collector Saturation Region 0.5 TJ = 25C 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(sat) @ VCE = 10 V 0 COEFFICIENT (mV/ C) VOLTAGE (VOLTS) 1.0 0.4 0.2 0.1 0.2 0.5 0.5 1.0 1.5 2.0 VCE(sat) @ IC/IB = 10 0 VC for VCE(sat) 50 100 200 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 2.5 0.1 0.2 500 Figure 16. "On" Voltages VS for VBE 0.5 50 100 200 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) Figure 17. Temperature Coefficients http://onsemi.com 49 500 ON Semiconductor Amplifier Transistor 2N4410 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 80 Vdc Collector-Base Voltage VCBO 120 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector Current -- Continuous IC 250 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watts mW/C TJ, Tstg -55 to +150 C Symbol Max Unit Operating and Storage Junction Temperature Range 1 2 3 CASE 29-11, STYLE 1 TO-92 (TO-226AA) COLLECTOR 3 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W 2 BASE 1 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 80 -- Vdc Collector-Emitter Breakdown Voltage (IC = 500 Adc, VBE = 5.0 Vdc, RBE = 8.2 k ohms) V(BR)CEX 120 -- Vdc Collector-Base Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO 120 -- Vdc Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO 5.0 -- Vdc -- -- 0.01 1.0 -- 0.1 OFF CHARACTERISTICS Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0, TA = 100C) ICBO Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) IEBO Adc Adc 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. Semiconductor Components Industries, LLC, 2001 June, 2001 - Rev. 11 50 Publication Order Number: 2N4410/D 2N4410 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Characteristic Min Max 60 60 -- 400 Unit ON CHARACTERISTICS DC Current Gain (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) hFE -- Collector-Emitter Saturation Voltage (IC = 1.0 mAdc, IB = 0.1 mAdc) VCE(sat) -- 0.2 Vdc Base-Emitter Saturation Voltage (IC = 1.0 mAdc, IB = 0.1 mAdc) VBE(sat) -- 0.8 Vdc Base-Emitter On Voltage (IC = 1.0 mAdc, VCE = 5.0 Vdc) VBE(on) -- 0.8 Vdc fT 60 300 MHz Collector-Base Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz, emitter guarded) Ccb -- 12 pF Emitter-Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz, collector guarded) Ceb -- 50 pF SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product(2) (IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz) 2. fT = |hfe| * ftest. http://onsemi.com 51 2N4410 500 h FE, DC CURRENT GAIN 300 200 VCE = 1.0 V VCE = 5.0 V TJ = 125C 25C 100 50 -55C 30 20 10 7.0 5.0 0.1 0.2 0.3 0.5 0.7 1.0 3.0 2.0 5.0 7.0 IC, COLLECTOR CURRENT (mA) 10 20 30 50 70 100 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain 1.0 0.9 0.8 0.7 0.6 IC = 1.0 mA 10 mA 100 mA 30 mA 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (mA) 2.0 Figure 2. Collector Saturation Region http://onsemi.com 52 5.0 10 20 50 2N4410 IC, COLLECTOR CURRENT (A) 101 100 VCE = 30 V TJ = 125C 10-1 10-2 75C REVERSE 10-3 FORWARD 25C 10-4 10-5 0.4 IC = ICES 0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) 0.5 0.6 Figure 3. Collector Cut-Off Region 1.0 V, TEMPERATURE COEFFICIENT (mV/C) TJ = 25C VBE(sat) @ IC/IB = 10 0.6 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 TJ = -55C to +135C 1.5 1.0 0.5 VC for VCE(sat) 0 -0.5 -1.0 VB for VBE(sat) -1.5 -2.0 -2.5 0.1 100 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) Figure 4. "On" Voltages 100 70 50 VBB -8.8 V 10.2 V Vin 100 10 s INPUT PULSE tr, tf 10 ns DUTY CYCLE = 1.0% 0.25 F VCC 30 V 3.0 k RC RB Vout 5.1 k Vin 100 50 100 Figure 5. Temperature Coefficients C, CAPACITANCE (pF) V, VOLTAGE (VOLTS) 0.8 2.5 2.0 1N914 TJ = 25C 30 20 10 Cibo 7.0 5.0 Cobo 3.0 2.0 1.0 0.2 Values Shown are for IC @ 10 mA 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Switching Time Test Circuit Figure 7. Capacitances http://onsemi.com 53 10 20 2N4410 1000 500 100 td @ VEB(off) = 1.0 V 30 VCC = 120 V 20 10 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 IC, COLLECTOR CURRENT (mA) IC/IB = 10 TJ = 25C tf @ VCC = 30 V 1000 t, TIME (ns) t, TIME (ns) 2000 tr @ VCC = 30 V 50 tf @ VCC = 120 V 3000 tr @ VCC = 120 V 300 200 5000 IC/IB = 10 TJ = 25C 500 300 200 ts @ VCC = 120 V 100 100 50 0.2 0.3 0.5 200 Figure 8. Turn-On Time 1.0 2.0 3.0 5.0 10 20 30 50 IC, COLLECTOR CURRENT (mA) Figure 9. Turn-Off Time http://onsemi.com 54 100 200 ON Semiconductor Amplifier Transistor 2N5087 PNP Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 50 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage VEBO 3.0 Vdc Collector Current -- Continuous IC 50 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watts mW/C TJ, Tstg -55 to +150 C Operating and Storage Junction Temperature Range 1 2 CASE 29-11, STYLE 1 TO-92 (TO-226AA) COLLECTOR 3 THERMAL CHARACTERISTICS Characteristic 3 Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W 2 BASE 1 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 50 -- Vdc Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0) V(BR)CBO 50 -- Vdc Collector Cutoff Current (VCB = 35 Vdc, IE = 0) ICBO -- 50 nAdc Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) IEBO -- 50 nAdc OFF CHARACTERISTICS 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 June, 2001 - Rev. 1 55 Publication Order Number: 2N5087/D 2N5087 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Characteristic Min Max 250 250 250 800 -- -- Unit ON CHARACTERISTICS DC Current Gain (IC = 100 Adc, VCE = 5.0 Vdc) (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc)(1) hFE -- Collector-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) VCE(sat) -- 0.3 Vdc Base-Emitter On Voltage (IC = 1.0 mAdc, VCE = 5.0 Vdc) VBE(on) -- 0.85 Vdc fT 40 -- MHz Collector-Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Ccb -- 4.0 pF Small-Signal Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) hfe 250 900 Noise Figure (IC = 20 Adc, VCE = 5.0 Vdc, RS = 1.0 k, f = 1.0 kHz) (IC = 100 Adc, VCE = 5.0 Vdc, RS = 3.0 k, f = 1.0 kHz) NF -- -- 2.0 2.0 SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 500 Adc, VCE = 5.0 Vdc, f = 20 MHz) -- dB 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. TYPICAL NOISE CHARACTERISTICS (VCE = -5.0 Vdc, TA = 25C) 10 7.0 IC = 10 A 5.0 In, NOISE CURRENT (pA) en, NOISE VOLTAGE (nV) 1.0 7.0 5.0 BANDWIDTH = 1.0 Hz RS 0 30 A 3.0 100 A 300 A 1.0 mA 2.0 IC = 1.0 mA 3.0 2.0 300 A 1.0 0.7 0.5 100 A 0.3 30 A 0.2 1.0 10 20 50 100 200 500 1.0k f, FREQUENCY (Hz) 2.0k 5.0k 0.1 10k BANDWIDTH = 1.0 Hz RS 10 A 10 Figure 1. Noise Voltage 20 50 100 200 500 1.0k 2.0k f, FREQUENCY (Hz) Figure 2. Noise Current http://onsemi.com 56 5.0k 10k 2N5087 NOISE FIGURE CONTOURS 1.0M 500k BANDWIDTH = 1.0 Hz 200k 100k 50k BANDWIDTH = 1.0 Hz 200k 100k 50k 20k 10k 0.5 dB 5.0k 1.0 dB 2.0k 1.0k 500 200 100 1.0M 500k RS , SOURCE RESISTANCE (OHMS) RS , SOURCE RESISTANCE (OHMS) (VCE = -5.0 Vdc, TA = 25C) 2.0 dB 3.0 dB 5.0 dB 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (A) 500 700 1.0k 20k 10k 0.5 dB 5.0k 1.0 dB 2.0k 1.0k 500 200 100 2.0 dB 3.0 dB 5.0 dB 10 20 RS , SOURCE RESISTANCE (OHMS) Figure 3. Narrow Band, 100 Hz 1.0M 500k 50 70 100 200 300 IC, COLLECTOR CURRENT (A) 500 700 1.0k Figure 4. Narrow Band, 1.0 kHz 10 Hz to 15.7 kHz 200k 100k 50k Noise Figure is Defined as: 20k 10k 2 2 1 2 S In RS en2 4KTR 4KTRS NF 20 log10 0.5 dB 5.0k 2.0k 1.0k 500 200 100 30 en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman's Constant (1.38 x 10-23 j/K) T = Temperature of the Source Resistance (K) RS = Source Resistance (Ohms) 1.0 dB 2.0 dB 3.0 dB 5.0 dB 10 20 30 50 70 100 200 300 500 700 1.0k IC, COLLECTOR CURRENT (A) Figure 5. Wideband http://onsemi.com 57 2N5087 TYPICAL STATIC CHARACTERISTICS h FE, DC CURRENT GAIN 400 TJ = 125C 25C 200 -55C 100 80 60 40 0.003 0.005 VCE = 1.0 V VCE = 10 V 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100 1.0 100 TA = 25C IC, COLLECTOR CURRENT (mA) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 6. DC Current Gain 0.8 IC = 1.0 mA 0.6 10 mA 50 mA 100 mA 0.4 0.2 0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 5.0 10 TA = 25C PULSE WIDTH = 300 s 80 DUTY CYCLE 2.0% 300 A 200 A 150 A 40 100 A 20 50 A 0 5.0 10 15 20 25 30 35 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) TJ = 25C V, VOLTAGE (VOLTS) 1.2 1.0 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 0 VCE(sat) @ IC/IB = 10 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 40 Figure 8. Collector Characteristics V, TEMPERATURE COEFFICIENTS (mV/C) Figure 7. Collector Saturation Region 1.4 250 A 60 0 20 IB = 400 A 350 A 50 100 1.6 *APPLIES for IC/IB hFE/2 0.8 0 *VC for VCE(sat) 25C to 125C -55C to 25C 0.8 25C to 125C 1.6 2.4 0.1 Figure 9. "On" Voltages VB for VBE 0.2 -55C to 25C 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) Figure 10. Temperature Coefficients http://onsemi.com 58 50 100 2N5087 TYPICAL DYNAMIC CHARACTERISTICS 500 300 200 200 100 70 50 30 tr 20 10 7.0 5.0 1.0 3.0 tf 30 td @ VBE(off) = 0.5 V 2.0 100 70 50 20 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 10 -1.0 100 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) -50 -70 -100 Figure 12. Turn-Off Time 500 10 TJ = 25C C, CAPACITANCE (pF) VCE = 20 V 300 5.0 V 200 TJ = 25C 7.0 100 Cib 5.0 3.0 2.0 Cob 70 50 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 1.0 0.05 50 0.1 0.2 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 13. Current-Gain -- Bandwidth Product Figure 14. Capacitance 20 VCE = -10 Vdc f = 1.0 kHz TA = 25C 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 200 hoe, OUTPUT ADMITTANCE ( mhos) f, T CURRENT-GAIN BANDWIDTH PRODUCT (MHz) Figure 11. Turn-On Time hie , INPUT IMPEDANCE (k ) VCC = -3.0 V IC/IB = 10 IB1 = IB2 TJ = 25C ts 300 t, TIME (ns) t, TIME (ns) 1000 700 500 VCC = 3.0 V IC/IB = 10 TJ = 25C 100 70 50 50 30 20 10 7.0 5.0 3.0 Figure 15. Input Impedance 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) Figure 16. Output Admittance http://onsemi.com 59 20 VCE = 10 Vdc f = 1.0 kHz TA = 25C 2.0 0.1 100 10 50 100 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) 2N5087 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 FIGURE 19 0.05 P(pk) 0.02 0.03 0.02 t1 0.01 0.01 0.01 0.02 SINGLE PULSE 0.05 0.1 0.2 0.5 1.0 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN-569) ZJA(t) = r(t) RJA TJ(pk) - TA = P(pk) ZJA(t) t2 2.0 5.0 10 20 50 t, TIME (ms) 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k Figure 17. Thermal Response IC, COLLECTOR CURRENT (mA) 400 200 100 s 100 TC = 25C 60 TA = 25C 40 dc TJ = 150C 10 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 6.0 4.0 2.0 6.0 8.0 10 1.0 s dc 20 4.0 10 s 1.0 ms Figure 18. Active-Region Safe Operating Area IC, COLLECTOR CURRENT (nA) 104 VCC = 30 V ICEO 102 101 ICBO AND ICEX @ VBE(off) = 3.0 V 100 10-1 10-2 -40 -20 0 DESIGN NOTE: USE OF THERMAL RESPONSE DATA 40 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 103 The safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 18 is based upon TJ(pk) = 150C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from the data in Figure 17. At high case or ambient temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. +20 +40 +60 +80 +100 +120 +140 +160 TJ, JUNCTION TEMPERATURE (C) A train of periodical power pulses can be represented by the model as shown in Figure 19. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 17 was calculated for various duty cycles. To find ZJA(t), multiply the value obtained from Figure 17 by the steady state value RJA. Example: The 2N5087 is dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2) Using Figure 17 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore T = r(t) x P(pk) x RJA = 0.22 x 2.0 x 200 = 88C. For more information, see ON Semiconductor Application Note AN569/D, available from the Literature Distribution Center or on our website at www.onsemi.com. Figure 19. Typical Collector Leakage Current http://onsemi.com 60 ON Semiconductor Amplifier Transistors 2N5088 2N5089 NPN Silicon MAXIMUM RATINGS Rating Symbol 2N5088 2N5089 Unit Collector-Emitter Voltage VCEO 30 25 Vdc Collector-Base Voltage VCBO 35 30 Vdc Emitter-Base Voltage VEBO 3.0 Vdc Collector Current -- Continuous IC 50 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watts mW/C TJ, Tstg -55 to +150 C Operating and Storage Junction Temperature Range 1 2 CASE 29-11, STYLE 1 TO-92 (TO-226AA) COLLECTOR 3 THERMAL CHARACTERISTICS Characteristic Symbol Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case 3 RJA (1) RJC Max Unit 200 C/W 83.3 C/W 2 BASE 1 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max 30 25 -- -- 35 30 -- -- -- -- 50 50 -- -- 50 100 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(2) (IC = 1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 15 Vdc, IE = 0) V(BR)CEO 2N5088 2N5089 Vdc V(BR)CBO 2N5088 2N5089 Vdc ICBO 2N5088 2N5089 Emitter Cutoff Current (VEB(off) = 3.0 Vdc, IC = 0) (VEB(off) = 4.5 Vdc, IC = 0) nAdc IEBO nAdc 1. RJA is measured with the device soldered into a typical printed circuit board. 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. Semiconductor Components Industries, LLC, 2001 June, 2001 - Rev. 1 61 Publication Order Number: 2N5088/D 2N5088 2N5089 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Min Max 2N5088 2N5089 300 400 900 1200 (IC = 1.0 mAdc, VCE = 5.0 Vdc) 2N5088 2N5089 350 450 -- -- (IC = 10 mAdc, VCE = 5.0 Vdc)(2) 2N5088 2N5089 300 400 -- -- Characteristic Unit ON CHARACTERISTICS DC Current Gain (IC = 100 Adc, VCE = 5.0 Vdc) hFE -- Collector-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) VCE(sat) -- 0.5 Vdc Base-Emitter On Voltage (IC = 10 mAdc, VCE = 5.0 Vdc)(2) VBE(on) -- 0.8 Vdc fT 50 -- MHz Collector-Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Ccb -- 4.0 pF Emitter-Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Ceb -- 10 pF 350 450 1400 1800 -- -- 3.0 2.0 SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 500 Adc, VCE = 5.0 Vdc, f = 20 MHz) Small-Signal Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) hfe 2N5088 2N5089 Noise Figure (IC = 100 Adc, VCE = 5.0 Vdc, RS = 1.0 k, f = 1.0 kHz) -- NF 2N5088 2N5089 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model http://onsemi.com 62 dB 2N5088 2N5089 NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25C) NOISE VOLTAGE 30 IC = 10 mA BANDWIDTH = 1.0 Hz 20 RS 0 en , NOISE VOLTAGE (nV) 20 en , NOISE VOLTAGE (nV) 30 BANDWIDTH = 1.0 Hz 3.0 mA 10 1.0 mA 7.0 5.0 3.0 300 A 10 20 50 100 200 RS 0 f = 10 Hz 10 100 Hz 7.0 10 kHz 3.0 0.01 0.02 500 1k 2k 5k 10k 20k 50k 100k f, FREQUENCY (Hz) Figure 2. Effects of Frequency IC = 10 mA 2.0 1.0 mA 300 A 100 A 0.3 0.2 0.1 16 3.0 mA 1.0 0.7 0.5 RS 0 10 20 10 A 50 100 200 0.05 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) 5.0 10 20 BANDWIDTH = 1.0 Hz 3.0 100 kHz Figure 3. Effects of Collector Current NF, NOISE FIGURE (dB) In, NOISE CURRENT (pA) 10 7.0 5.0 1.0 kHz 5.0 BANDWIDTH = 10 Hz to 15.7 kHz 12 500 A 8.0 IC = 1.0 mA 100 A 10 A 4.0 30 A 0 10 500 1k 2k 5k 10k 20k 50k 100k f, FREQUENCY (Hz) 20 Figure 4. Noise Current 50 100 200 500 1k 2k 5k 10k 20k 50k 100k RS, SOURCE RESISTANCE (OHMS) Figure 5. Wideband Noise Figure 100 Hz NOISE DATA 20 BANDWIDTH = 1.0 Hz 100 A 100 70 50 3.0 mA 1.0 mA 30 300 A 20 10 7.0 5.0 3.0 IC = 10 mA NF, NOISE FIGURE (dB) VT, TOTAL NOISE VOLTAGE (nV) 300 200 30 A 10 A 10 20 16 IC = 10 mA 3.0 mA 1.0 mA 12 300 A 8.0 100 A 4.0 50 100 200 500 1k 2k 5k 10k 20k 50k 100k RS, SOURCE RESISTANCE (OHMS) 0 30 A 10 Figure 6. Total Noise Voltage 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k RS, SOURCE RESISTANCE (OHMS) Figure 7. Noise Figure http://onsemi.com 63 10 A BANDWIDTH = 1.0 Hz h FE, DC CURRENT GAIN (NORMALIZED) 2N5088 2N5089 4.0 3.0 VCE = 5.0 V 2.0 TA = 125C 25C 1.0 -55C 0.7 0.5 0.4 0.3 0.2 0.01 0.02 0.03 0.05 0.1 1.0 0.2 0.3 0.5 IC, COLLECTOR CURRENT (mA) 2.0 3.0 5.0 10 Figure 8. DC Current Gain 1.0 -0.4 RVBE, BASE-EMITTER TEMPERATURE COEFFICIENT (mV/ C) TJ = 25C V, VOLTAGE (VOLTS) 0.8 0.6 VBE @ VCE = 5.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 -0.8 -1.2 TJ = 25C to 125C -1.6 -2.0 -55C to 25C -2.4 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 100 8.0 C, CAPACITANCE (pF) 6.0 TJ = 25C Cob 4.0 3.0 Ceb Cib Ccb 2.0 1.0 0.8 0.1 0.2 1.0 2.0 5.0 0.5 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 Figure 10. Temperature Coefficients 50 100 f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) Figure 9. "On" Voltages 20 Figure 11. Capacitance 500 300 200 100 VCE = 5.0 V TJ = 25C 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 12. Current-Gain -- Bandwidth Product http://onsemi.com 64 ON Semiconductor 2N5401* Amplifier Transistors PNP Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 Unit Collector-Emitter Voltage VCEO 120 150 Vdc Collector-Base Voltage VCBO 130 160 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector Current -- Continuous IC 600 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watts mW/C TJ, Tstg -55 to +150 C Operating and Storage Junction Temperature Range 1 2 CASE 29-11, STYLE 1 TO-92 (TO-226AA) COLLECTOR 3 THERMAL CHARACTERISTICS Characteristic 3 Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W 2 BASE 1 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max 150 -- 160 -- 5.0 -- -- -- 50 50 -- 50 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0) V(BR)CEO 2N5400 2N5401 V(BR)CBO 2N5400 2N5401 Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) Collector Cutoff Current (VCB = 120 Vdc, IE = 0) (VCB = 120 Vdc, IE = 0, TA = 100C) Vdc V(BR)EBO Vdc Vdc ICBO 2N5401 2N5401 Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) IEBO nAdc 1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 June, 2001 - Rev. 0 65 Publication Order Number: 2N5401/D 2N5401 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Characteristic ON Min Max 50 60 50 -- 240 -- -- -- 0.2 0.5 -- -- 1.0 1.0 100 300 -- 6.0 40 200 -- 8.0 Unit CHARACTERISTICS(1) DC Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 50 mAdc, VCE = 5.0 Vdc) hFE Collector-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VCE(sat) Base-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VBE(sat) -- Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) fT Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo Small-Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe Noise Figure (IC = 250 Adc, VCE = 5.0 Vdc, RS = 1.0 k, f = 1.0 kHz) NF 1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%. http://onsemi.com 66 MHz pF -- dB 2N5401 200 h FE, CURRENT GAIN 150 TJ = 125C 100 25C 70 50 -55C VCE = -1.0 V VCE = -5.0 V 30 20 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 IC, COLLECTOR CURRENT (mA) 10 20 30 50 100 10 20 50 1.0 0.9 0.8 0.7 0.6 IC = 1.0 mA 0.5 10 mA 30 mA 100 mA 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (mA) 2.0 5.0 Figure 2. Collector Saturation Region 103 IC, COLLECTOR CURRENT (A) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain 102 VCE = 30 V IC = ICES 101 TJ = 125C 100 75C 10-1 10-2 REVERSE 25C 10-3 0.3 0.2 FORWARD 0.1 0 0.1 0.2 0.3 0.4 0.5 VBE, BASE-EMITTER VOLTAGE (VOLTS) Figure 3. Collector Cut-Off Region http://onsemi.com 67 0.6 0.7 2N5401 1.0 0.9 V, TEMPERATURE COEFFICIENT (mV/ C) TJ = 25C V, VOLTAGE (VOLTS) 0.8 0.7 VBE(sat) @ IC/IB = 10 0.6 0.5 0.4 0.3 0.2 VCE(sat) @ IC/IB = 10 0.1 0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100 2.5 TJ = -55C to 135C 2.0 1.5 1.0 0.5 VC for VCE(sat) 0 -0.5 -1.0 -1.5 VB for VBE(sat) -2.0 -2.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) Figure 4. "On" Voltages tr, tf 10 ns DUTY CYCLE = 1.0% 0.25 F 3.0 k RC Vout RB 5.1 k Vin 100 C, CAPACITANCE (pF) 10 s INPUT PULSE 100 70 50 VCC -30 V 100 Vin TJ = 25C 30 Cibo 20 10 7.0 5.0 Cobo 3.0 1N914 2.0 1.0 0.2 Values Shown are for IC @ 10 mA 0.3 2.0 3.0 5.0 7.0 0.5 0.7 1.0 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Switching Time Test Circuit 1000 700 500 20 Figure 7. Capacitances tr @ VCC = 120 V 300 1000 700 500 tr @ VCC = 30 V 200 t, TIME (ns) t, TIME (ns) 10 2000 IC/IB = 10 TJ = 25C 100 70 50 td @ VBE(off) = 1.0 V VCC = 120 V 20 1.0 2.0 3.0 5.0 10 20 30 300 IC/IB = 10 TJ = 25C tf @ VCC = 120 V tf @ VCC = 30 V 200 ts @ VCC = 120 V 100 70 50 30 10 0.2 0.3 0.5 100 Figure 5. Temperature Coefficients VBB +8.8 V 10.2 V 50 30 50 100 20 0.2 0.3 0.5 200 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 8. Turn-On Time Figure 9. Turn-Off Time http://onsemi.com 68 50 100 200 2N5457, 2N5458 2N5457 and 2N5458 are Preferred Devices JFETs - General Purpose N-Channel - Depletion N-Channel Junction Field Effect Transistors, depletion mode (Type A) designed for audio and switching applications. * * * * * * * http://onsemi.com N-Channel for Higher Gain Drain and Source Interchangeable High AC Input Impedance High DC Input Resistance Low Transfer and Input Capacitance Low Cross-Modulation and Intermodulation Distortion Unibloc Plastic Encapsulated Package 1 DRAIN 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDS 25 Vdc Drain-Gate Voltage VDG 25 Vdc Reverse Gate-Source Voltage VGSR -25 Vdc IG 10 mAdc 310 2.82 mW mW/C Gate Current Total Device Dissipation TO-92 CASE 29 STYLE 5 1 2 3 MARKING DIAGRAMS 2N 5457 YWW PD @ TA = 25C Derate above 25C Operating Junction Temperature TJ 135 C Storage Temperature Range Tstg -65 to +150 C Y WW 2N 5458 YWW = Year = Work Week ORDERING INFORMATION Device Package Shipping 2N5457 TO-92 5000 Units/Box 2N5458 TO-92 5000 Units/Box Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 September, 2001 - Rev. 3 69 Publication Order Number: 2N5638/D 2N5457, 2N5458 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Min Max Unit V(BR)GSS -25 -25 - Vdc IGSS - - - - 1.0 -200 nAdc VGS(off) -1.0 -2.0 - - -6.0 -7.0 Vdc VGS - - -2.5 -3.5 -6.0 -7.0 Vdc 2N5638 2N5639 IDSS 1.0 2.0 3.0 6.0 5.0 9.0 mAdc Forward Transfer Admittance (Note 1.) (VDS = 15 Vdc, VGS = 0, f = 1 kHz) 2N5638 2N5639 |Yfs| 1000 1500 3000 4000 5000 5500 mhos Forward Transfer Admittance (Note 1.) (VDS = 15 Vdc, VGS = 0, f = 1 kHz) |Yos| - 10 50 mhos Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1 kHz) Ciss - 4.5 7.0 pF Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 1 kHz) Crss - 1.5 3.0 pF OFF CHARACTERISTICS (IG = -10 Adc, VDS = 0) Gate-Source Breakdown Voltage Gate Reverse Current (VGS = -15 Vdc, VDS = 0) (VGS = -15 Vdc, VDS = 0, TA = 100C) Gate-Source Cutoff Voltage (VDS = 15 Vdc, iD = 1 nAdc) 2N5457 2N5458 Gate-Source Voltage (VDS = 15 Vdc, iD = 100 Adc) (VDS = 15 Vdc, iD = 200 Adc) 2N5457 2N5458 ON CHARACTERISTICS Zero-Gate-Voltage Drain Current (Note 1.) (VDS = 20 Vdc, VGS = 0) DYNAMIC CHARACTERISTICS 1. Pulse Width 630 ms, Duty Cycle 10%. 14 VDS = 15 V VGS = 0 f = 1 kHz NF, NOISE FIGURE (dB) 12 10 8 6 4 2 0 0.001 10 0.01 0.1 1.0 RS, SOURCE RESISTANCE (Megohms) Figure 1. Noise Figure versus Source Resistance VGS(off) -1.2 V 1.2 VGS = 0 V 1.0 -0.2 V 0.8 0.6 -0.4 V 0.4 -0.6 V 0 1.0 0.8 VDS = 15 V 0.6 0.4 0 -1.2 25 5 10 15 20 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) VGS(off) -1.2 V 0.2 -0.8 V -1.0 V 0.2 0 I D , DRAIN CURRENT (mA) I D , DRAIN CURRENT (mA) 1.2 Figure 2. Typical Drain Characteristics -0.8 -0.4 VGS, GATE-SOURCE VOLTAGE (VOLTS) 0 Figure 3. Common Source Transfer Characteristics http://onsemi.com 70 2N5457, 2N5458 5 VGS = 0 V VGS(off) -3.5 V 4 I D , DRAIN CURRENT (mA) I D , DRAIN CURRENT (mA) 5 VGS(off) -3.5 V 3 -1 V 2 -2 V 1 4 3 VDS = 15 V 2 1 -3 V 0 0 5 10 15 20 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 0 -5 25 Figure 4. Typical Drain Characteristics 10 VGS(off) -5.8 V I D , DRAIN CURRENT (mA) I D , DRAIN CURRENT (mA) VGS = 0 V -1 V 6 -2 V 4 -3 V 2 0 -4 V -5 V 0 5 10 15 20 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 6 VDS = 15 V 4 2 0 -7 25 VGS(off) -5.8 V 8 Figure 6. Typical Drain Characteristics NOTE: 0 Figure 5. Common Source Transfer Characteristics 10 8 -3 -2 -1 -4 VGS, GATE-SOURCE VOLTAGE (VOLTS) -6 -5 -4 -3 -2 VGS, GATE-SOURCE VOLTAGE (VOLTS) -1 Figure 7. Common Source Transfer Characteristics Note: Graphical data is presented for dc conditions. Tabular data is given for pulsed conditions (Pulse Width = 630 ms, Duty Cycle = 10%). Under dc conditions, self heating in higher IDSS units reduces IDSS. http://onsemi.com 71 0 ON Semiconductor 2 DRAIN JFET Amplifiers 2N5460 2N5461 2N5462 3 GATE P-Channel -- Depletion 1 SOURCE MAXIMUM RATINGS Symbol Value Unit Drain-Gate Voltage Rating VDG 40 Vdc Reverse Gate-Source Voltage VGSR 40 Vdc Forward Gate Current IG(f) 10 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 350 2.8 mW mW/C Junction Temperature Range TJ -65 to +135 C Storage Channel Temperature Range Tstg -65 to +150 C 1 2 3 CASE 29-11, STYLE 7 TO-92 (TO-226AA) ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit V(BR)GSS 40 -- -- Vdc 2N5460, 2N5461, 2N5462 -- -- 5.0 nAdc 2N5460, 2N5461, 2N5462 -- -- 1.0 Adc 0.75 1.0 1.8 -- -- -- 6.0 7.5 9.0 Vdc 0.5 0.8 1.5 -- -- -- 4.0 4.5 6.0 Characteristic OFF CHARACTERISTICS Gate-Source Breakdown Voltage (IG = 10 Adc, VDS = 0) Gate Reverse Current (VGS = 20 Vdc, VDS = 0) (VGS = 30 Vdc, VDS = 0) (VGS = 20 Vdc, VDS = 0, TA = 100C) (VGS = 30 Vdc, VDS = 0, TA = 100C) Gate-Source Cutoff Voltage (VDS = 15 Vdc, ID = 1.0 Adc) Gate-Source Voltage (VDS = 15 Vdc, ID = 0.1 mAdc) (VDS = 15 Vdc, ID = 0.2 mAdc) (VDS = 15 Vdc, ID = 0.4 mAdc) Semiconductor Components Industries, LLC, 2001 May, 2001 - Rev. 2 2N5460, 2N5461, 2N5462 IGSS 2N5460 2N5461 2N5462 VGS(off) VGS 2N5460 2N5461 2N5462 72 Vdc Publication Order Number: 2N5460/D 2N5460 2N5461 2N5462 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 2N5460 2N5461 2N5462 IDSS -1.0 -2.0 -4.0 -- -- -- -5.0 -9.0 -16 mAdc 2N5460 2N5461 2N5462 yfs 1000 1500 2000 -- -- -- 4000 5000 6000 mhos Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) yos -- -- 75 mhos Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Ciss -- 5.0 7.0 pF Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Crss -- 1.0 2.0 pF en -- 60 115 nV Hz ON CHARACTERISTICS Zero-Gate-Voltage Drain Current (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) SMALL-SIGNAL CHARACTERISTICS Forward Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) FUNCTIONAL CHARACTERISTICS Equivalent Short-Circuit Input Noise Voltage (VDS = 15 Vdc, VGS = 0, f = 100 Hz, BW = 1.0 Hz) Figure 8. http://onsemi.com 73 2N5460 2N5461 2N5462 4.0 VDS = 15 V 3.5 I D, DRAIN CURRENT (mA) FORWARD TRANSFER ADMITTANCE versus DRAIN CURRENT 3.0 2.5 TA = -55C 2.0 25C 1.5 125C 1.0 0.5 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VGS, GATE-SOURCE VOLTAGE (VOLTS) 1.8 2.0 Yfs FORWARD TRANSFER ADMITTANCE ( mhos) DRAIN CURRENT versus GATE SOURCE VOLTAGE 4000 3000 2000 1000 700 500 VDS = 15 V f = 1.0 kHz 300 200 0.2 0.3 10 I D, DRAIN CURRENT (mA) VDS = 15 V 8.0 7.0 TA = -55C 6.0 25C 125C 5.0 4.0 3.0 2.0 1.0 0 0.5 1.5 2.0 2.5 3.0 1.0 VGS, GATE-SOURCE VOLTAGE (VOLTS) 3.5 4.0 5000 3000 2000 1000 VDS = 15 V f = 1.0 kHz 700 500 0.5 0.7 12 TA = -55C 10 8.0 25C 125C 6.0 4.0 2.0 0 1.0 2.0 3.0 4.0 5.0 6.0 VGS, GATE-SOURCE VOLTAGE (VOLTS) 2.0 3.0 ID, DRAIN CURRENT (mA) 5.0 7.0 10000 VDS = 15 V 14 1.0 Figure 5. VGS(off) = 4.0 Volts 7.0 Yfs FORWARD TRANSFER ADMITTANCE ( mhos) 16 I D, DRAIN CURRENT (mA) 4.0 7000 Figure 2. VGS(off) = 4.0 Volts 0 3.0 10000 9.0 0 2.0 Figure 4. VGS(off) = 2.0 Volts Yfs FORWARD TRANSFER ADMITTANCE ( mhos) Figure 1. VGS(off) = 2.0 Volts 0.5 0.7 1.0 ID, DRAIN CURRENT (mA) 8.0 7000 5000 3000 2000 1000 VDS = 15 V f = 1.0 kHz 700 500 0.5 0.7 1.0 2.0 3.0 ID, DRAIN CURRENT (mA) 5.0 Figure 6. VGS(off) = 5.0 Volts Figure 3. VGS(off) = 5.0 Volts http://onsemi.com 74 7.0 10 2N5460 2N5461 2N5462 10 VDS = 15 V f = 1.0 kHz 8.0 IDSS = 3.0 mA 100 70 50 6.0 mA 10 mA 30 C, CAPACITANCE (pF) 200 7.0 6.0 Ciss 5.0 4.0 3.0 2.0 20 10 0.1 f = 1.0 MHz VGS = 0 9.0 300 Coss 1.0 0.2 0.5 1.0 2.0 ID, DRAIN CURRENT (mA) 5.0 0 10 Crss 0 Figure 7. Output Resistance versus Drain Current 10 20 30 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) Figure 8. Capacitance versus Drain-Source Voltage 10 9.0 NF, NOISE FIGURE (dB) r oss , OUTPUT RESISTANCE (k ohms) 1000 700 500 VDS = 15 V VGS = 0 f = 100 Hz 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 1.0 10 100 1000 RS, SOURCE RESISTANCE (k Ohms) 10,000 Figure 9. Noise Figure versus Source Resistance vi COMMON SOURCE y PARAMETERS FOR FREQUENCIES BELOW 30 MHz Crss Ciss ross Coss | yfs | vi yis = j Ciss yos = j Cosp * + 1/ross yfs = yfs | yrs = -j Crss *Cosp is Coss in parallel with Series Combination of Ciss and Crss. NOTE: 1. Graphical data is presented for dc conditions. Tabular data is given for pulsed conditions (Pulse Width = 630 ms, Duty Cycle = 10%). Figure 10. Equivalent Low Frequency Circuit http://onsemi.com 75 40 ON Semiconductor 1 DRAIN JFET VHF/UHF Amplifiers N-Channel -- Depletion 2N5486 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain-Gate Voltage VDG 25 Vdc Reverse Gate-Source Voltage VGSR 25 Vdc ID 30 mAdc Forward Gate Current IG(f) 10 mAdc Total Device Dissipation @ TC = 25C Derate above 25C PD 350 2.8 mW mW/C TJ, Tstg -65 to +150 C Drain Current Operating and Storage Junction Temperature Range 1 2 3 CASE 29-11, STYLE 5 TO-92 (TO-226AA) ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)GSS -25 -- -- Vdc -- -- -- -- -1.0 -0.2 nAdc Adc -2.0 -- -6.0 8.0 -- 20 4000 -- 8000 -- -- 1000 -- -- 75 -- -- 100 3500 -- -- OFF CHARACTERISTICS Gate-Source Breakdown Voltage (IG = -1.0 Adc, VDS = 0) Gate Reverse Current (VGS = -20 Vdc, VDS = 0) (VGS = -20 Vdc, VDS = 0, TA = 100C) IGSS Gate Source Cutoff Voltage (VDS = 15 Vdc, ID = 10 nAdc) VGS(off) Vdc ON CHARACTERISTICS Zero-Gate-Voltage Drain Current (VDS = 15 Vdc, VGS = 0) IDSS mAdc SMALL-SIGNAL CHARACTERISTICS Forward Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) yfs Input Admittance (VDS = 15 Vdc, VGS = 0, f = 400 MHz) Re(yis) Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) yos Output Conductance (VDS = 15 Vdc, VGS = 0, f = 400 MHz) Re(yos) Forward Transconductance (VDS = 15 Vdc, VGS = 0, f = 400 MHz) Re(yfs) Semiconductor Components Industries, LLC, 2001 May, 2001 - Rev. 0 76 mhos mhos mhos mhos mhos Publication Order Number: 2N5486/D 2N5486 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Ciss -- -- 5.0 pF Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Crss -- -- 1.0 pF Output Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Coss -- -- 2.0 pF SMALL-SIGNAL CHARACTERISTICS (continued) COMMON SOURCE CHARACTERISTICS 30 20 bis @ IDSS 10 7.0 5.0 3.0 gis @ IDSS 2.0 gis @ 0.25 IDSS 1.0 0.7 0.5 0.3 10 grs , REVERSE TRANSADMITTANCE (mmhos) brs , REVERSE SUSCEPTANCE (mmhos) gis, INPUT CONDUCTANCE (mmhos) bis, INPUT SUSCEPTANCE (mmhos) ADMITTANCE PARAMETERS (VDS = 15 Vdc, Tchannel = 25C) bis @ 0.25 IDSS 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 5.0 3.0 2.0 0.25 IDSS 0.3 0.2 0.1 0.07 0.05 500 700 1000 brs @ IDSS 1.0 0.7 0.5 grs @ IDSS, 0.25 IDSS 10 20 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 10 10 7.0 5.0 gfs @ IDSS gfs @ 0.25 IDSS 3.0 2.0 1.0 0.7 0.5 0.3 0.2 10 30 Figure 2. Reverse Transfer Admittance (yrs) gos, OUTPUT ADMITTANCE (mhos) bos, OUTPUT SUSCEPTANCE (mhos) gfs, FORWARD TRANSCONDUCTANCE (mmhos) |b fs|, FORWARD SUSCEPTANCE (mmhos) Figure 1. Input Admittance (yis) 20 |bfs| @ IDSS 30 50 70 100 200 300 f, FREQUENCY (MHz) bos @ IDSS and 0.25 IDSS 2.0 1.0 0.5 0.2 gos @ IDSS 0.1 0.05 |bfs| @ 0.25 IDSS 20 5.0 gos @ 0.25 IDSS 0.02 500 700 1000 0.01 10 Figure 3. Forward Transadmittance (yfs) 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 4. Output Admittance (yos) http://onsemi.com 77 2N5486 COMMON SOURCE CHARACTERISTICS S-PARAMETERS (VDS = 15 Vdc, Tchannel = 25C, Data Points in MHz) 30 20 10 0 1.0 40 350 340 400 300 0.8 60 ID = IDSS 0.6 800 310 50 10 0 350 340 330 0.4 320 700 800 700 300 60 290 70 280 80 900 0.3 ID = IDSS, 0.25 IDSS 310 900 800 0.2 300 700 600 600 500 600 80 40 500 400 0.7 70 320 20 300 200 0.9 30 200 100 50 330 ID = 0.25 IDSS 100 0.1 500 290 400 300 280 0.0 200 270 90 100 260 100 260 110 250 110 250 120 240 120 240 130 230 130 230 140 220 140 220 90 900 150 160 170 180 190 200 210 150 160 170 Figure 5. S11s 30 20 10 0 350 340 330 0.6 0.5 60 900 70 80 90 100 110 120 800 700 600 500 0.4 900 800 700 600 500 0.3 100 400 400 0.3 ID = 0.25 IDSS 300 200 0.4 100 0.5 300 ID = IDSS 200 180 190 200 210 Figure 6. S12s 40 50 270 100 130 30 20 10 0 350 340 330 100 200 I = 0.25 IDSS D 300 1.0 400 100 200 500 300 600 400 700 0.9 500 800 600 ID = IDSS 700 900 800 900 0.8 320 40 310 50 300 60 290 70 280 80 270 90 270 260 100 260 250 110 250 240 120 240 230 130 230 220 140 220 0.7 320 310 300 290 280 0.6 0.6 140 150 160 170 180 190 200 210 150 Figure 7. S21s 160 170 180 190 Figure 8. S22s http://onsemi.com 78 200 210 2N5486 COMMON GATE CHARACTERISTICS ADMITTANCE PARAMETERS (VDG = 15 Vdc, Tchannel = 25C) 10 7.0 5.0 grg , REVERSE TRANSADMITTANCE (mmhos) brg , REVERSE SUSCEPTANCE (mmhos) gig, INPUT CONDUCTANCE (mmhos) big, INPUT SUSCEPTANCE (mmhos) 20 gig @ IDSS 3.0 grg @ 0.25 IDSS 2.0 1.0 0.7 0.5 big @ IDSS 0.3 0.2 10 20 30 big @ 0.25 IDSS 50 70 100 200 300 f, FREQUENCY (MHz) 0.5 0.3 0.1 0.07 0.05 0.25 IDSS 0.03 0.02 0.01 0.007 0.005 500 700 1000 brg @ IDSS 0.2 gig @ IDSS, 0.25 IDSS 10 10 7.0 5.0 gfg @ IDSS 3.0 gfg @ 0.25 IDSS 2.0 1.0 0.7 0.5 bfg @ IDSS 0.3 brg @ 0.25 IDSS 0.2 0.1 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 10. Reverse Transfer Admittance (yrg) gog, OUTPUT ADMITTANCE (mmhos) bog, OUTPUT SUSCEPTANCE (mmhos) gfg , FORWARD TRANSCONDUCTANCE (mmhos) bfg , FORWARD SUSCEPTANCE (mmhos) Figure 9. Input Admittance (yig) 20 500 700 1000 1.0 0.7 0.5 bog @ IDSS, 0.25 IDSS 0.3 0.2 0.1 0.07 0.05 gog @ IDSS 0.03 0.02 0.01 gog @ 0.25 IDSS 10 Figure 11. Forward Transfer Admittance (yfg) 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 12. Output Admittance (yog) http://onsemi.com 79 2N5486 COMMON GATE CHARACTERISTICS S-PARAMETERS (VDS = 15 Vdc, Tchannel = 25C, Data Points in MHz) 30 20 10 0 350 340 0.7 40 100 100 200 200 0.5 300 300 60 ID = IDSS 0.4 70 400 700 400 500 310 50 300 60 290 70 280 80 600 900 270 260 100 110 250 110 120 240 120 130 230 130 220 140 170 180 190 20 10 0 350 200 100 600 ID = IDSS 700 300 290 280 0.0 270 500 600 700 800 800 260 ID = 0.25 IDSS 250 0.01 240 0.02 230 900 0.03 220 0.04 150 160 170 180 190 200 210 340 330 Figure 14. S12g 340 330 30 20 10 40 320 0 1.5 1.0 100 100 0.4 320 0.01 140 210 0.5 40 330 0.02 Figure 13. S11g 30 340 310 900 160 350 0.04 90 100 150 0 800 900 90 40 10 600 800 0.3 320 20 0.03 500 700 80 30 ID = 0.25 IDSS 0.6 50 330 350 300 200 400 320 700 600 800 0.9 ID = IDSS 500 900 310 50 300 60 290 70 280 80 270 90 270 260 100 260 110 250 110 250 120 240 120 240 130 230 130 230 140 220 140 220 50 100 0.3 60 0.2 70 80 ID = 0.25 IDSS 0.1 900 90 900 100 150 160 170 180 190 200 210 ID = IDSS, 0.25 IDSS 0.8 Figure 15. S21g 300 0.7 290 280 0.6 150 160 170 180 190 Figure 16. S22g http://onsemi.com 80 310 200 210 ON Semiconductor 2N5550 2N5551* Amplifier Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit Collector-Emitter Voltage VCEO 140 160 Vdc Collector-Base Voltage VCBO 160 180 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current -- Continuous IC 600 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watts mW/C TJ, Tstg -55 to +150 C Symbol Max Unit Operating and Storage Junction Temperature Range 1 2 CASE 29-11, STYLE 1 TO-92 (TO-226AA) COLLECTOR 3 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W 2 BASE 1 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic 3 Symbol Min Max Unit 140 160 -- -- 160 180 -- -- 6.0 -- Vdc -- -- -- -- 100 50 100 50 nAdc -- 50 OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0 ) V(BR)CEO 2N5550 2N5551 V(BR)CBO 2N5550 2N5551 Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCB = 120 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0, TA = 100C) (VCB = 120 Vdc, IE = 0, TA = 100C) Vdc V(BR)EBO Vdc ICBO 2N5550 2N5551 2N5550 2N5551 Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) IEBO Adc nAdc 1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 June, 2001 - Rev. 1 81 Publication Order Number: 2N5550/D 2N5550 2N5551 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Min Max 2N5550 2N5551 60 80 -- -- (IC = 10 mAdc, VCE = 5.0 Vdc) 2N5550 2N5551 60 80 250 250 (IC = 50 mAdc, VCE = 5.0 Vdc) 2N5550 2N5551 20 30 -- -- Both Types -- 0.15 2N5550 2N5551 -- -- 0.25 0.20 Both Types -- 1.0 2N5550 2N5551 -- -- 1.2 1.0 fT 100 300 MHz Cobo -- 6.0 pF -- -- 30 20 50 200 -- -- 10 8.0 Characteristic ON Unit CHARACTERISTICS(1) DC Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc) hFE Collector-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) -- VCE(sat) (IC = 50 mAdc, IB = 5.0 mAdc) Base-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) Vdc VBE(sat) (IC = 50 mAdc, IB = 5.0 mAdc) Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo pF 2N5550 2N5551 Small-Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe Noise Figure (IC = 250 Adc, VCE = 5.0 Vdc, RS = 1.0 k, f = 1.0 kHz) -- NF dB 2N5550 2N5551 1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%. 500 h FE, DC CURRENT GAIN 300 200 VCE = 1.0 V VCE = 5.0 V TJ = 125C 25C 100 50 -55C 30 20 10 7.0 5.0 0.1 0.2 0.3 0.5 0.7 1.0 3.0 2.0 5.0 7.0 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain http://onsemi.com 82 10 20 30 50 70 100 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2N5550 2N5551 1.0 0.9 0.8 0.7 IC = 1.0 mA 0.6 10 mA 100 mA 30 mA 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (mA) 2.0 5.0 10 20 50 Figure 2. Collector Saturation Region IC, COLLECTOR CURRENT (A) 101 100 VCE = 30 V TJ = 125C 10-1 10-2 75C REVERSE 10-3 FORWARD 25C 10-4 10-5 0.4 IC = ICES 0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) 0.5 0.6 Figure 3. Collector Cut-Off Region 1.0 V, TEMPERATURE COEFFICIENT (mV/C) TJ = 25C V, VOLTAGE (VOLTS) 0.8 VBE(sat) @ IC/IB = 10 0.6 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 2.5 2.0 1.5 1.0 0.5 VC for VCE(sat) 0 -0.5 -1.0 -1.5 VB for VBE(sat) -2.0 -2.5 0.1 100 TJ = -55C to +135C Figure 4. "On" Voltages 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) Figure 5. Temperature Coefficients http://onsemi.com 83 50 100 2N5550 2N5551 100 70 50 Vin 100 10 s INPUT PULSE tr, tf 10 ns DUTY CYCLE = 1.0% 0.25 F VCC 30 V 3.0 k RC RB Vout 5.1 k Vin C, CAPACITANCE (pF) VBB -8.8 V 10.2 V 1N914 100 TJ = 25C 30 20 10 Cibo 7.0 5.0 Cobo 3.0 2.0 1.0 0.2 Values Shown are for IC @ 10 mA 0.3 0.5 0.7 1.0 Figure 6. Switching Time Test Circuit 1000 2000 100 50 td @ VEB(off) = 1.0 V 30 VCC = 120 V 10 0.2 0.3 0.5 1.0 10 20 IC/IB = 10 TJ = 25C tf @ VCC = 30 V 1000 tr @ VCC = 30 V 20 5.0 7.0 tf @ VCC = 120 V 3000 t, TIME (ns) t, TIME (ns) 200 5000 tr @ VCC = 120 V 300 3.0 Figure 7. Capacitances IC/IB = 10 TJ = 25C 500 2.0 VR, REVERSE VOLTAGE (VOLTS) 2.0 3.0 5.0 10 20 30 50 IC, COLLECTOR CURRENT (mA) 500 300 200 ts @ VCC = 120 V 100 100 50 0.2 0.3 0.5 200 1.0 2.0 3.0 5.0 10 20 30 50 IC, COLLECTOR CURRENT (mA) Figure 8. Turn-On Time Figure 9. Turn-Off Time http://onsemi.com 84 100 200 ON Semiconductor 1 DRAIN JFET Switching 2N5555 3 GATE N-Channel -- Depletion 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDS 25 Vdc Drain-Gate Voltage VDG 25 Vdc Gate-Source Voltage VGS 25 Vdc Forward Gate Current IGF 10 mAdc Total Device Dissipation @ TC = 25C Derate above 25C PD 350 2.8 mW mW/C Junction Temperature Range TJ -65 to +150 C Storage Temperature Range Tstg -65 to +150 C 1 2 3 CASE 29-11, STYLE 5 TO-92 (TO-226AA) ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)GSS 25 -- Vdc Gate Reverse Current (VGS = 15 Vdc, VDS = 0) IGSS -- 1.0 nAdc Drain Cutoff Current (VDS = 12 Vdc, VGS = -10 V) Drain Cutoff Current (VDS = 12 Vdc, VGS = -10 V, TA = 100C) ID(off) -- -- 10 2.0 nAdc Adc IDSS 15 -- mAdc VGS(f) -- 1.0 Vdc Drain-Source On-Voltage (ID = 7.0 mAdc, VGS = 0) VDS(on) -- 1.5 Vdc Static Drain-Source On Resistance (ID = 0.1 mAdc, VGS = 0) rDS(on) -- 150 Ohms rds(on) -- 150 Ohms Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Ciss -- 5.0 pF Reverse Transfer Capacitance (VDS = 0, VGS = 10 Vdc, f = 1.0 MHz) Crss -- 1.2 pF (V ( DD = 10 Vdc,, ID(on) = 7.0 mAdc,, 0 VGS(off) = -10 10 Vdc) Vd ) (See (S Figure Fi VGS(on) = 0, 1) td(on) -- 5.0 ns tr -- 5.0 ns ( DD = 10 Vdc,, ID(on) = 7.0 mAdc,, (V VGS(on) = 0, 0 VGS(off) = -10 10 Vdc) Vd ) (See (S Figure Fi 1) td(off) -- 15 ns tf -- 10 ns OFF CHARACTERISTICS Gate-Source Breakdown Voltage (IG = 10 Adc, VDS = 0) ON CHARACTERISTICS Zero-Gate-Voltage Drain Current(1) (VDS = 15 Vdc, VGS = 0) Gate-Source Forward Voltage (IG(f) = 1.0 mAdc, VDS = 0) 1. Pulse Test: Pulse Width < 300 s, Duty Cycle < 3.0%. SMALL-SIGNAL CHARACTERISTICS Small-Signal Drain-Source "ON" Resistance (VGS = 0, ID = 0, f = 1.0 kHz) SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Semiconductor Components Industries, LLC, 2001 May, 2001 - Rev. 2 85 Publication Order Number: 2N5555/D 2N5555 PULSE WIDTH VDD 1.0 k PULSE GENERATOR (50 OHMS) 90% 50 OHM COAXIAL CABLE 10 k 50 OHM COAXIAL CABLE 1.0 k TEKTRONIX 567 SAMPLING SCOPE INPUT VGS(on) 90% 50% 10% 50% 10% INPUT PULSE RISE TIME VGS(off) INPUT PULSE FALL TIME Rin = 50 OHMS 50 td(off) td(on) OUTPUT INPUT PULSE RISE TIME < 1.0 ns FALL TIME < 1.0 ns NOMINAL VALUE OF ON" PULSE WIDTH = 400 ns DUTY CYCLE 1.0% GENERATOR SOURCE IMPEDANCE = 50 OHMS 10% 10% 90% 90% tr tf Figure 1. Switching Times Test Circuit COMMON SOURCE CHARACTERISTICS 30 20 bis @ IDSS 10 7.0 5.0 3.0 gis @ IDSS 2.0 gis @ 0.25 IDSS 1.0 0.7 0.5 0.3 grs , REVERSE TRANSADMITTANCE (mmhos) brs , REVERSE SUSCEPTANCE (mmhos) gis, INPUT CONDUCTANCE (mmhos) bis, INPUT SUSCEPTANCE (mmhos) ADMITTANCE PARAMETERS (VDS = 15 Vdc, Tchannel = 25C) bis @ 0.25 IDSS 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 5.0 3.0 2.0 0.25 IDSS 0.3 0.2 0.1 0.07 0.05 500 700 1000 brs @ IDSS 1.0 0.7 0.5 grs @ IDSS, 0.25 IDSS 10 20 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 100 10 10 7.0 5.0 gfs @ IDSS gfs @ 0.25 IDSS 3.0 2.0 1.0 0.7 0.5 0.3 0.2 30 Figure 3. Reverse Transfer Admittance (yrs) gos, OUTPUT ADMITTANCE (mhos) bos, OUTPUT SUSCEPTANCE (mhos) gfs, FORWARD TRANSCONDUCTANCE (mmhos) |b fs|, FORWARD SUSCEPTANCE (mmhos) Figure 2. Input Admittance (yis) 20 |bfs| @ IDSS 20 30 50 70 100 200 300 f, FREQUENCY (MHz) bos @ IDSS and 0.25 IDSS 2.0 1.0 0.5 0.2 gos @ IDSS 0.1 0.05 |bfs| @ 0.25 IDSS 10 5.0 gos @ 0.25 IDSS 0.02 500 700 1000 0.01 10 Figure 4. Forward Transadmittance (yfs) 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 100 Figure 5. Output Admittance (yos) http://onsemi.com 86 2N5555 COMMON SOURCE CHARACTERISTICS S-PARAMETERS (VDS = 15 Vdc, Tchannel = 25C, Data Points in MHz) 30 20 10 0 1.0 40 350 340 400 0.8 ID = IDSS 0.6 90 800 50 350 340 330 320 700 800 700 300 60 290 70 280 80 900 0.3 ID = IDSS, 0.25 IDSS 310 900 800 0.2 300 700 600 600 500 600 80 310 0 0.4 500 400 0.7 70 40 10 300 300 60 320 20 200 200 0.9 30 ID = 0.25 IDSS 100 100 50 330 0.1 500 290 400 300 280 0.0 200 270 90 100 260 100 260 110 250 110 250 120 240 120 240 130 230 130 230 140 220 140 220 900 150 160 30 20 170 180 190 200 210 150 160 170 340 330 30 20 10 Figure 6. S11s 10 0 350 0.6 0.5 60 900 70 80 90 100 110 120 800 700 600 500 0.4 900 800 700 600 500 0.3 100 400 400 0.3 ID = 0.25 IDSS 300 200 0.4 100 0.5 300 ID = IDSS 200 180 190 200 210 Figure 7. S12s 40 50 270 100 130 0 350 340 330 100 200 I = 0.25 IDSS D 300 1.0 400 100 200 500 300 600 400 700 0.9 500 800 600 ID = IDSS 700 900 800 900 0.8 320 40 310 50 300 60 290 70 280 80 270 90 270 260 100 260 250 110 250 240 120 240 230 130 230 220 140 220 0.7 320 310 300 290 280 0.6 0.6 140 150 160 170 180 190 200 210 150 Figure 8. S21s 160 170 180 190 Figure 9. S22s http://onsemi.com 87 200 210 2N5555 COMMON GATE CHARACTERISTICS ADMITTANCE PARAMETERS (VDG = 15 Vdc, Tchannel = 25C) 10 7.0 5.0 grg , REVERSE TRANSADMITTANCE (mmhos) brg , REVERSE SUSCEPTANCE (mmhos) gig, INPUT CONDUCTANCE (mmhos) big, INPUT SUSCEPTANCE (mmhos) 20 gig @ IDSS 3.0 grg @ 0.25 IDSS 2.0 1.0 0.7 0.5 big @ IDSS 0.3 0.2 10 20 30 big @ 0.25 IDSS 50 70 100 200 300 f, FREQUENCY (MHz) 0.5 0.3 0.1 0.07 0.05 0.25 IDSS 0.03 0.02 0.01 0.007 0.005 500 700 1000 brg @ IDSS 0.2 gig @ IDSS, 0.25 IDSS 10 10 7.0 5.0 gfg @ IDSS 3.0 gfg @ 0.25 IDSS 2.0 1.0 0.7 0.5 bfg @ IDSS 0.3 brg @ 0.25 IDSS 0.2 0.1 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 11. Reverse Transfer Admittance (yrg) gog, OUTPUT ADMITTANCE (mmhos) bog, OUTPUT SUSCEPTANCE (mmhos) gfg , FORWARD TRANSCONDUCTANCE (mmhos) bfg , FORWARD SUSCEPTANCE (mmhos) Figure 10. Input Admittance (yig) 20 500 700 1000 1.0 0.7 0.5 bog @ IDSS, 0.25 IDSS 0.3 0.2 0.1 0.07 0.05 gog @ IDSS 0.03 0.02 0.01 gog @ 0.25 IDSS 10 Figure 12. Forward Transfer Admittance (yfg) 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 13. Output Admittance (yog) http://onsemi.com 88 2N5555 COMMON GATE CHARACTERISTICS S-PARAMETERS (VDS = 15 Vdc, Tchannel = 25C, Data Points in MHz) 30 20 10 0 350 340 0.7 40 100 100 200 200 0.5 300 300 60 ID = IDSS 0.4 70 400 700 400 500 310 50 300 60 290 70 280 80 600 900 270 90 100 260 100 110 250 110 120 240 120 130 230 130 140 220 160 170 180 190 20 10 0 350 200 50 320 300 0.01 100 600 ID = IDSS 700 290 280 0.0 270 500 600 700 800 800 260 ID = 0.25 IDSS 250 0.01 240 0.02 230 900 0.03 220 0.04 150 160 170 180 190 200 210 340 330 Figure 15. S12g 340 330 30 20 10 40 320 0 1.5 1.0 100 100 0.4 330 0.02 140 210 0.5 40 340 310 Figure 14. S11g 30 350 0.04 900 150 0 800 900 90 40 10 600 800 0.3 320 20 0.03 500 700 80 30 ID = 0.25 IDSS 0.6 50 330 350 300 200 400 320 700 600 800 0.9 ID = IDSS 500 900 310 50 300 60 290 70 280 80 270 90 270 260 100 260 110 250 110 250 120 240 120 240 130 230 130 230 140 220 140 220 100 0.3 60 0.2 70 80 ID = 0.25 IDSS 0.1 900 90 900 100 150 160 170 180 190 200 210 ID = IDSS, 0.25 IDSS 0.8 Figure 16. S21g 300 0.7 290 280 0.6 150 160 170 180 190 Figure 17. S22g http://onsemi.com 89 310 200 210 2N5638, 2N5639 2N5638 is a Preferred Device JFET Chopper Transistors N-Channel - Depletion N-Channel Junction Field Effect Transistors, depletion mode (Type A) designed for chopper and high-speed switching applications. http://onsemi.com * Low Drain-Source "ON" Resistance: * * RDS(on) = 30 for 2N5638 RDS(on) = 60 for 2N5639 Low Reverse Transfer Capacitance Crss = 4.0 pF (Max) @ f = 1.0 MHz Fast Switching Characteristics tr = 5.0 ns (Max) (2N5638) 1 DRAIN 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDS 30 Vdc Drain-Gate Voltage VDG 30 Vdc Reverse Gate-Source Voltage VGSR 30 Vdc Forward Gate Current IGF 10 mAdc Total Device Dissipation PD @ TA = 25C Derate above 25C 310 2.82 mW mW/C Storage Temperature Range Tstg -65 to +150 C Operating Junction Temp Range TJ -65 to +135 C TO-92 CASE 29 STYLE 5 1 2 3 MARKING DIAGRAMS 2N 5638 YWW Y WW VDD = 10 Vdc V RL DD (RDS(on) 50) ID 50 PULSE GENERATOR INPUT (SCOPE A) tf 90% VGS(off) Device TO + - 50 OHM 0.001 F SCOPE B 50 Ohms 1.0 k 50 TO 50 OHM SCOPE A tr = Year = Work Week ORDERING INFORMATION 0.1 F VGS(on) 10% 90% td(on) td(off) RL 2N 5639 YWW Package Shipping 2N5638RLRA TO-92 2000/Tape & Reel 2N5639 TO-92 5000/Box 2N5369RLRA TO-92 2000/Tape & Reel Preferred devices are recommended choices for future use and best overall value. 10% OUTPUT (SCOPE B) 50 SCOPE TEKTRONIX 567A OR EQUIVALENT Figure 1. Switching Times Test Circuit Semiconductor Components Industries, LLC, 2001 September, 2001 - Rev. 3 90 Publication Order Number: 2N5638/D 2N5638, 2N5639 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)GSS 35 - Vdc IGSS - 1.0 1.0 nAdc Adc ID(off) - OFF CHARACTERISTICS (IG = -1.0 Adc, VDS = 0) Gate-Source Breakdown Voltage Gate Reverse Current (VGS = -15 Vdc, VDS = 0) (VGS = -15 Vdc, VDS = 0, TA = 100C) Drain-Cutoff Current (VDS = 15 Vdc, VGS = -12 Vdc) (VDS = 15 Vdc, VGS = -12 Vdc, TA = 100C) (VDS = 15 Vdc, VGS = -8.0 Vdc) (VDS = 15 Vdc, VGS = -8.0 Vdc, TA = 100C) 2N5638 2N5638 2N5639 2N5639 Adc 1.0 1.0 1.0 1.0 ON CHARACTERISTICS Zero-Gate-Voltage Drain Current (Note 1.) (VDS = 20 Vdc, VGS = 0) 2N5638 2N5639 Drain-Source "ON" Voltage (ID = 12 mAdc, VGS = 0) (ID = 6.0 mAdc, VGS = 0) 2N5638 2N5639 IDSS 50 25 - - - - 0.5 0.5 - - 30 60 - - 30 60 VDS(on) Static Drain-Source "ON" Resistance (ID = 1.0 mAdc, VGS = 0) Vdc RDS(on) 2N5638 2N5639 mAdc SMALL-SIGNAL CHARACTERISTICS Static Drain-Source "ON" Resistance (VGS = 0, ID = 0, f = 1.0 kHz) RDS(on) 2N5638 2N5639 Input Capacitance (VDS = 0, VGS = -12 Vdc, f = 1.0 MHz) Ciss - 10 pF Reverse Transfer Capacitance (VDS = 0, VGS = -12 Vdc, f = 1.0 MHz) Crss - 4.0 pF SWITCHING CHARACTERISTICS (VDD = 10 Vdc, VGS(on) = 0, VGS(off) = -10 Vdc, RG' = 50 . See Figure 1 on page 90) Turn-On Delay Time ID(on) = 12 mAdc, 2N5638 ID(on) = 6.0 mAdc, 2N5639 td(on) - - 4.0 6.0 ns Rise Time ID(on) = 12 mAdc, 2N5638 ID(on) = 6.0 mAdc, 2N5639 tr - - 5.0 8.0 ns Turn-Off Delay Time ID(on) = 12 mAdc, 2N5638 ID(on) = 6.0 mAdc, 2N5639 td(off) - - 5.0 10 ns Fall Time ID(on) = 12 mAdc, 2N5638 ID(on) = 6.0 mAdc, 2N5639 tf - - 10 20 ns 1. Pulse Width 300 s, Duty Cycle 3.0%. http://onsemi.com 91 ON Semiconductor 2N6426* 2N6427 Darlington Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 40 Vdc Emitter-Base Voltage VEBO 12 Vdc Collector Current -- Continuous IC 500 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watts mW/C TJ, Tstg -55 to +150 C Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W Operating and Storage Junction Temperature Range 1 2 3 CASE 29-04, STYLE 1 TO-92 (TO-226AA) THERMAL CHARACTERISTICS Characteristic COLLECTOR 3 BASE 2 EMITTER 1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (1) (IC = 10 mAdc, VBE = 0) V(BR)CEO 40 -- -- Vdc Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0) V(BR)CBO 40 -- -- Vdc Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO 12 -- -- Vdc Collector Cutoff Current (VCE = 25 Vdc, IB = 0) ICES -- -- 1.0 Adc Collector Cutoff Current (VCB= 30 Vdc, IE = 0) ICBO -- -- 50 nAdc Emitter Cutoff Current (VEB= 10 Vdc, IC = 0) IEBO -- -- 50 nAdc Characteristic OFF CHARACTERISTICS 1. Pulse Test: Pulse Width 300 s; Duty Cycle 2.0%. Semiconductor Components Industries, LLC, 2001 February, 2001 - Rev.1 92 Publication Order Number: 2N6426/D 2N6426 2N6427 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Min Typ Max 2N6426 2N6427 20,000 10,000 -- -- 200,000 100,000 (IC = 100 mAdc, VCE = 5.0 Vdc) 2N6426 2N6427 30,000 20,000 -- -- 300,000 200,000 (IC = 500 mAdc, VCE = 5.0 Vdc) 2N6426 2N6427 20,000 14,000 -- -- 200,000 140,000 -- -- 0.71 0.9 1.2 1.5 Characteristic Unit ON CHARACTERISTICS DC Current Gain(1) (IC = 10 mAdc, VCE = 5.0 Vdc) hFE -- Collector-Emitter Saturation Voltage (IC = 50 mAdc, IB = 0.5 mAdc) (IC = 500 mAdc, IB = 0.5 mAdc VCE(sat) Vdc Base-Emitter Saturation Voltage (IC = 500 mAdc, IB = 0.5 mAdc) VBE(sat) -- 1.52 2.0 Vdc Base-Emitter On Voltage (IC = 50 mAdc, VCE = 5.0 Vdc) VBE(on) -- 1.24 1.75 Vdc Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo -- 5.4 7.0 pF Input Capacitance (VEB = 1.0 Vdc, IC = 0, f = 1.0 MHz) Cibo -- 10 15 pF 100 50 -- -- 2000 1000 20,000 10,000 -- -- -- -- 1.5 1.3 2.4 2.4 -- -- SMALL-SIGNAL CHARACTERISTICS Input Impedance (IC = 10 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) hie 2N6426 2N6427 Small-Signal Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) k hfe 2N6426 2N6427 Current-Gain -- High Frequency (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) -- |hfe| 2N6426 2N6427 -- Output Admittance (IC = 10 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) hoe -- -- 1000 mhos Noise Figure (IC = 1.0 mAdc, VCE = 5.0 Vdc, RS = 100 k, f = 1.0 kHz) NF -- 3.0 10 dB 1. Pulse Test: Pulse Width 300 s; Duty Cycle 2.0%. RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model http://onsemi.com 93 2N6426 2N6427 NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25C) 2.0 BANDWIDTH = 1.0 Hz RS 0 200 i n, NOISE CURRENT (pA) en, NOISE VOLTAGE (nV) 500 100 10 A 50 100 A 20 IC = 1.0 mA 10 5.0 BANDWIDTH = 1.0 Hz 1.0 0.7 0.5 IC = 1.0 mA 0.3 0.2 100 A 0.1 0.07 0.05 10 A 0.03 10 20 50 100 200 500 1k 2k 5k 10k 20k f, FREQUENCY (Hz) 50k 100k 0.02 10 20 50 100 200 14 200 IC = 10 A 70 50 100 A 30 20 10 1.0 mA 1.0 2.0 BANDWIDTH = 10 Hz TO 15.7 kHz 12 BANDWIDTH = 10 Hz TO 15.7 kHz 100 50k 100k Figure 3. Noise Current NF, NOISE FIGURE (dB) VT, TOTAL WIDEBAND NOISE VOLTAGE (nV) Figure 2. Noise Voltage 500 1k 2k 5k 10k 20k f, FREQUENCY (Hz) 10 10 A 8.0 100 A 6.0 4.0 IC = 1.0 mA 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (k) 500 1000 0 1.0 Figure 4. Total Wideband Noise Voltage 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (k) Figure 5. Wideband Noise Figure http://onsemi.com 94 500 1000 2N6426 2N6427 SMALL-SIGNALCHARACTERISTICS 4.0 |h fe |, SMALL-SIGNAL CURRENT GAIN C, CAPACITANCE (pF) 20 TJ = 25C 10 7.0 Cibo Cobo 5.0 3.0 2.0 0.04 0.1 0.2 0.4 1.0 2.0 4.0 VR, REVERSE VOLTAGE (VOLTS) 10 20 2.0 1.0 0.8 0.6 0.4 0.2 0.5 40 hFE, DC CURRENT GAIN TJ = 125C 100k 70k 50k 25C 30k 20k 10k 7.0k 5.0k -55C 3.0k 2.0k 5.0 7.0 10 VCE = 5.0 V 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 RV, TEMPERATURE COEFFICIENTS (mV/C) TJ = 25C V, VOLTAGE (VOLTS) 1.4 VBE(sat) @ IC/IB = 1000 1.2 VBE(on) @ VCE = 5.0 V 1.0 VCE(sat) @ IC/IB = 1000 5.0 7.0 10 0.5 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) 500 TJ = 25C 2.5 IC = 10 mA 50 mA 250 mA 500 mA 2.0 1.5 1.0 0.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (A) 500 1000 Figure 9. Collector Saturation Region 1.6 0.6 2.0 3.0 Figure 8. DC Current Gain 0.8 1.0 Figure 7. High Frequency Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 6. Capacitance 200k VCE = 5.0 V f = 100 MHz TJ = 25C 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 -1.0 -2.0 *APPLIES FOR IC/IB hFE/3.0 25C TO 125C *RVC FOR VCE(sat) -55C TO 25C -3.0 25C TO 125C -4.0 VB FOR VBE -5.0 -55C TO 25C -6.0 5.0 7.0 10 Figure 10. "On" Voltages 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) Figure 11. Temperature Coefficients http://onsemi.com 95 500 1.0 0.7 0.5 D = 0.5 0.2 0.3 0.2 0.1 SINGLE PULSE 0.05 0.1 0.07 0.05 SINGLE PULSE 0.03 ZJC(t) = r(t) * RJCTJ(pk) - TC = P(pk) ZJC(t) ZJA(t) = r(t) * RJATJ(pk) - TA = P(pk) ZJA(t) 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 500 1.0k 2.0k 5.0k 10k Figure 12. Thermal Response 1.0k 700 500 IC, COLLECTOR CURRENT (mA) RESISTANCE (NORMALIZED) 2N6426 2N6427 300 200 FIGURE A 1.0 ms TA = 25C tP TC = 25C 100 s PP 1.0 s 100 70 50 PP t1 30 20 10 0.4 0.6 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 1/f 1.0 2.0 4.0 6.0 10 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 13. Active Region Safe Operating Area t DUTYCYCLE t1f 1 tP PEAK PULSE POWER = PP 40 Design Note: Use of Transient Thermal Resistance Data http://onsemi.com 96 ON Semiconductor NPN 2N6515 2N6517 PNP 2N6520 High Voltage Transistors MAXIMUM RATINGS Symbol 2N6515 2N6517 2N6520 Unit Collector-Emitter Voltage VCEO 250 350 Vdc Collector-Base Voltage VCBO 250 350 Vdc Emitter-Base Voltage 2N6515, 2N6516, 2N6517 2N6519, 2N6520 VEBO Rating Voltage and current are negative for PNP transistors Vdc 6.0 5.0 Base Current IB 250 mAdc Collector Current - Continuous IC 500 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watts mW/C Operating and Storage Junction Temperature Range TJ, Tstg -55 to +150 C 1 2 3 CASE 29-04, STYLE 1 TO-92 (TO-226AA) COLLECTOR 3 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W 2 BASE NPN 1 EMITTER COLLECTOR 3 2 BASE PNP 1 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max 250 350 - - 250 350 - - 6.0 5.0 - - Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0 ) Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)CEO 2N6515 2N6517, 2N6520 Vdc V(BR)CBO 2N6515 2N6517, 2N6520 Vdc V(BR)EBO 2N6515, 2N6517 2N6520 Vdc 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. Semiconductor Components Industries, LLC, 2001 October, 2001 - Rev. 3 97 Publication Order Number: 2N6515/D NPN 2N6515 2N6517 PNP 2N6520 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Min Max - - 50 50 - - 50 50 2N6515 2N6517, 2N6520 35 20 - - (IC = 10 mAdc, VCE = 10 Vdc) 2N6515 2N6517, 2N6520 50 30 - - (IC = 30 mAdc, VCE = 10 Vdc) 2N6515 2N6517, 2N6520 50 30 300 200 (IC = 50 mAdc, VCE = 10 Vdc) 2N6515 2N6517, 2N6520 45 20 220 200 (IC = 100 mAdc, VCE = 10 Vdc) 2N6515 2N6517, 2N6520 25 15 - - - - - - 0.30 0.35 0.50 1.0 - - - 0.75 0.85 0.90 Characteristic Unit OFF CHARACTERISTICS (Continued) Collector Cutoff Current (VCB = 150 Vdc, IE = 0) (VCB = 250 Vdc, IE = 0) 2N6515 2N6517, 2N6520 ICBO Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) (VEB = 4.0 Vdc, IC = 0) 2N6515, 2N6517 2N6520 nAdc IEBO nAdc ON CHARACTERISTICS(1) DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) hFE - Collector-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 20 mAdc, IB = 2.0 mAdc) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VCE(sat) Vdc Base-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 20 mAdc, IB = 2.0 mAdc) (IC = 30 mAdc, IB = 3.0 mAdc) VBE(sat) Base-Emitter On Voltage (IC = 100 mAdc, VCE = 10 Vdc) VBE(on) - 2.0 Vdc fT 40 200 MHz Ccb - 6.0 pF - - 80 100 Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product(1) (IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz) Collector-Base Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) Emitter-Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Ceb 2N6515, 2N6517 2N6520 pF SWITCHING CHARACTERISTICS Turn-On Time (VCC = 100 Vdc, VBE(off) = 2.0 Vdc, IC = 50 mAdc, IB1 = 10 mAdc) ton - 200 s Turn-Off Time (VCC = 100 Vdc, IC = 50 mAdc, IB1 = IB2 = 10 mAdc) toff - 3.5 s 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. http://onsemi.com 98 NPN 2N6515 2N6517 PNP 2N6520 hFE , DC CURRENT GAIN 200 VCE = 10 V TJ = 125C 100 25C 70 -55C 50 30 20 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 1. DC Current Gain - NPN 2N6515 VCE = 10 V 100 200 TJ = 125C VCE = -10 V hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 200 25C 70 50 -55C 30 20 10 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 100 30 20 50 TJ = 25C VCE = 20 V f = 20 MHz 20 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 f, T CURRENT-GAIN BANDWIDTH PRODUCT (MHz) f, T CURRENT-GAIN BANDWIDTH PRODUCT (MHz) 70 2.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) -50 -70 -100 Figure 3. DC Current Gain - PNP 2N6520 100 10 1.0 -55C 50 Figure 2. DC Current Gain - NPN 2N6517 30 25C 70 10 -1.0 50 70 100 TJ = 125C Figure 4. Current-Gain - Bandwidth Product - NPN 2N6515, 2N6517 100 70 50 30 TJ = 25C VCE = -20 V f = 20 MHz 20 10 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) -50 -70 -100 Figure 5. Current-Gain - Bandwidth Product - PNP 2N6520 http://onsemi.com 99 NPN 2N6515 2N6517 PNP 2N6520 NPN 1.4 -1.4 TJ = 25C 1.2 -1.2 0.8 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1.0 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 10 V 0.4 0.2 0 1.0 VCE(sat) @ IC/IB = 5.0 2.0 3.0 -1.0 -0.8 VBE(sat) @ IC/IB = 10 -0.6 VBE(on) @ VCE = -10 V -0.4 -0.2 VCE(sat) @ IC/IB = 10 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 0 -1.0 70 100 IC 10 IB 2.0 1.5 1.0 25C to 125C 0.5 0 RVC for VCE(sat) -55C to 25C -0.5 -1.0 -55C to 125C -1.5 RVB for VBE -2.0 -2.5 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 8. Temperature Coefficients - NPN 2N6515, 2N6517 Ceb 20 10 7.0 5.0 Ccb 3.0 2.5 2.0 1.5 -50 -70 -100 IC 10 IB 25C to 125C 1.0 0.5 0 RVB for VBE -55C to 25C -0.5 -1.0 -1.5 -2.0 -2.5 -1.0 100 70 50 TJ = 25C 30 VCE(sat) @ IC/IB = 5.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) RVC for VCE(sat) -55C to 125C -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) -50 -70 -100 Figure 9. Temperature Coefficients - PNP 2N6520 C, CAPACITANCE (pF) C, CAPACITANCE (pF) 100 70 50 VCE(sat) @ IC/IB = 10 Figure 7. "On" Voltages - PNP 2N6520 RV, TEMPERATURE COEFFICIENTS (mV/C) RV, TEMPERATURE COEFFICIENTS (mV/C) Figure 6. "On" Voltages - NPN 2N6515, 2N6517 2.5 TJ = 25C 2.0 Ceb TJ = 25C 30 20 10 7.0 5.0 Ccb 3.0 2.0 1.0 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 1.0 -0.2 50 100 200 Figure 10. Capacitance - NPN 2N6515, 2N6517 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 VR, REVERSE VOLTAGE (VOLTS) Figure 11. Capacitance - PNP 2N6520 http://onsemi.com 100 -100 -200 NPN 2N6515 2N6517 PNP 2N6520 1.0k 700 500 td @ VBE(off) = 2.0 V 200 VCE(off) = 100 V IC/IB = 5.0 TJ = 25C tr 100 70 50 100 70 50 30 30 20 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 10 -1.0 Figure 12. Turn-On Time - NPN 2N6515, 2N6517 10k 7.0k 5.0k 2.0k ts t, TIME (ns) 500 tf -50 -70 -100 ts 1.0k 700 2.0k tf 300 VCE(off) = 100 V IC/IB = 5.0 IB1 = IB2 TJ = 25C 200 100 70 50 300 200 100 1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) Figure 13. Turn-On Time - PNP 2N6520 3.0k 1.0k 700 500 VCE(off) = -100 V IC/IB = 5.0 TJ = 25C tr 200 20 10 1.0 td @ VBE(off) = 2.0 V 300 t, TIME (ns) t, TIME (ns) 300 1.0k 700 500 VCE(off) = -100 V IC/IB = 5.0 IB1 = IB2 TJ = 25C 30 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 14. Turn-Off Time - NPN 2N6515, 2N6517 20 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) -50 -70 -100 Figure 15. Turn-Off Time - PNP 2N6520 http://onsemi.com 101 NPN 2N6515 2N6517 PNP 2N6520 +VCC VCC ADJUSTED FOR VCE(off) = 100 V +10.8 V 2.2 k 20 k 50 SAMPLING SCOPE 1.0 k 50 1/2MSD7000 -9.2 V PULSE WIDTH 100 s tr, tf 5.0 ns DUTY CYCLE 1.0% FOR PNP TEST CIRCUIT, REVERSE ALL VOLTAGE POLARITIES APPROXIMATELY -1.35 V (ADJUST FOR V(BE)off = 2.0 V) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 16. Switching Time Test Circuit 1.0 0.7 0.5 D = 0.5 0.2 0.3 0.2 0.1 0.1 0.07 0.05 SINGLE PULSE 0.05 SINGLE PULSE ZJC(t) = r(t) * RJC TJ(pk) - TC = P(pk) ZJC(t) ZJA(t) = r(t) * RJA TJ(pk) - TA = P(pk) ZJA(t) 0.03 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 500 1.0k 2.0k 5.0k 10k Figure 17. Thermal Response IC, COLLECTOR CURRENT (mA) 500 TA = 25C 200 100 PP 100 ms 20 CURRENT LIMIT THERMAL LIMIT (PULSE CURVES @ TC = 25C) SECOND BREAKDOWN LIMIT 10 5.0 2.0 CURVES APPLY BELOW RATED VCEO 1.0 0.5 tP 1.0 ms TC = 25C 50 FIGURE A 10 s 100 s 0.5 1.0 PP t1 2N6515 1/f t DUTYCYCLE t1f 1 tP PEAK PULSE POWER = PP 2N6517, 2N6520 2.0 5.0 10 20 50 100 200 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 18. Active Region Safe Operating Area 500 Design Note: Use of Transient Thermal Resistance Data http://onsemi.com 102 ON Semiconductor 2SA1774 PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT-416/SC-90 package which is designed for low power surface mount applications, where board space is at a premium. * Reduces Board Space * High hFE, 210-460 (typical) * Low VCE(sat), < 0.5 V * Available in 8 mm, 7-inch/3000 Unit Tape and Reel PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT 3 2 1 MAXIMUM RATINGS (TA = 25C) Rating Symbol Value Unit Collector-Base Voltage V(BR)CBO -60 Vdc Collector-Emitter Voltage V(BR)CEO -50 Vdc Emitter-Base Voltage V(BR)EBO -6.0 Vdc IC -100 mAdc Symbol Max Unit PD 150 mW TJ 150 C Tstg -55 ~ +150 C Collector Current -- Continuous CASE 463-01, STYLE 1 SOT-416/SC-90 COLLECTOR 3 DEVICE MARKING 2SA1774 = F9 THERMAL CHARACTERISTICS Rating Power Dissipation(1) Junction Temperature Storage Temperature Range 1 BASE 2 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C) Characteristic Symbol Min Typ Max Unit Collector-Base Breakdown Voltage (IC = -50 Adc, IE = 0) V(BR)CBO -60 -- -- Vdc Collector-Emitter Breakdown Voltage (IC = -1.0 mAdc, IB = 0) V(BR)CEO -50 -- -- Vdc Emitter-Base Breakdown Voltage (IE = -50 Adc, IE = 0) V(BR)EBO -6.0 -- -- Vdc ICBO -- -- -0.5 nA IEBO -- -- -0.5 Collector-Base Cutoff Current (VCB = -30 Vdc, IE = 0) Emitter-Base Cutoff Current (VEB = -5.0 Vdc, IB = 0) Collector-Emitter Saturation Voltage(2) (IC = -50 mAdc, IB = -5.0 mAdc) VCE(sat) Gain(2) DC Current (VCE = -6.0 Vdc, IC = -1.0 mAdc) -- -- -0.5 120 -- 560 -- 140 -- -- 3.5 -- hFE Transition Frequency (VCE = -12 Vdc, IC = -2.0 mAdc, f = 30 MHz) -- fT Output Capacitance (VCB = -12 Vdc, IE = 0 Adc, f = 1 MHz) COB A Vdc MHz pF 1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. 2. Pulse Test: Pulse Width 300 s, D.C. 2%. Semiconductor Components Industries, LLC, 2001 May, 2001 - Rev. 3 103 Publication Order Number: 2SA1774/D 2SA1774 TYPICAL ELECTRICAL CHARACTERISTICS TA = 25C 120 VCE , COLLECTOREMITTER VOLTAGE (V) 300 A 250 200 60 150 IB = 50 A 0 3 6 12 9 10 0.1 15 1 10 100 VCE, COLLECTOR VOLTAGE (V) IC, COLLECTOR CURRENT (mA) Figure 1. IC - VCE Figure 2. DC Current Gain 2 900 TA = 25C 800 1.5 1 0.5 700 600 500 400 300 TA = 25C VCE = 5 V 200 100 0 0.01 0.1 1 10 0 0.2 100 1 5 10 20 40 60 80 IC, COLLECTOR CURRENT (mA) Figure 3. Collector Saturation Region Figure 4. On Voltage 13 14 12 12 11 10 9 8 7 6 0.5 IB, BASE CURRENT (mA) C ob , CAPACITANCE (pF) Cib, INPUT CAPACITANCE (pF) TA = -25C 100 100 30 0 DC CURRENT GAIN 90 VCE = 10 V TA = 25C TA = 75C COLLECTOR VOLTAGE (mV) IC, COLLECTOR CURRENT (mA) 1000 100 150 200 10 8 6 4 2 0 1 2 3 0 4 0 VEB (V) 10 20 VCB (V) Figure 5. Capacitance Figure 6. Capacitance http://onsemi.com 104 30 40 ON Semiconductor 2SC4617 NPN Silicon General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-416/SC-90 package which is designed for low power surface mount applications, where board space is at a premium. * Reduces Board Space * High hFE, 210-460 (typical) * Low VCE(sat), < 0.5 V * Available in 8 mm, 7-inch/3000 Unit Tape and Reel NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT 3 MAXIMUM RATINGS (TA = 25C) 2 Rating Symbol Value Unit Collector-Base Voltage V(BR)CBO 50 Vdc Collector-Emitter Voltage V(BR)CEO 50 Vdc Emitter-Base Voltage V(BR)EBO 5.0 Vdc IC 100 mAdc Collector Current -- Continuous 1 CASE 463-01, STYLE 1 SOT-416/SC-90 COLLECTOR 3 DEVICE MARKING 2SC4617 = B9 THERMAL CHARACTERISTICS Rating Power Symbol Max Unit PD 125 mW Dissipation(1) Junction Temperature TJ 150 C Storage Temperature Range Tstg -55 ~ +150 C 1 BASE 2 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C) Symbol Min Typ Max Unit Collector-Base Breakdown Voltage (IC = 50 Adc, IE = 0) V(BR)CBO 50 -- -- Vdc Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 50 -- -- Vdc Emitter-Base Breakdown Voltage (IE = 50 Adc, IE = 0) V(BR)EBO 5.0 -- -- Vdc ICBO -- -- 0.5 A IEBO -- -- 0.5 Characteristic Collector-Base Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter-Base Cutoff Current (VEB = 4.0 Vdc, IB = 0) Collector-Emitter Saturation Voltage(2) (IC = 60 mAdc, IB = 5.0 mAdc) VCE(sat) Gain(2) DC Current (VCE = 6.0 Vdc, IC = 1.0 mAdc) -- -- 0.4 120 -- 560 fT -- 180 -- MHz COB -- 2.0 -- pF hFE Transition Frequency (VCE = 12 Vdc, IC = 2.0 mAdc, f = 30 MHz) Output Capacitance (VCB = 12 Vdc, IC = 0 Adc, f = 1 MHz) A Vdc -- 1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. 2. Pulse Test: Pulse Width 300 s, D.C. 2%. Semiconductor Components Industries, LLC, 2001 May, 2001 - Rev. 2 105 Publication Order Number: 2SC4617/D 2SC4617 TYPICAL ELECTRICAL CHARACTERISTICS 1000 160 A TA = 25C 50 120 A 40 100 A 30 80 A 60 A 20 40 A 10 0 TA = -25C 100 IB = 20 A 0 2 4 6 VCE, COLLECTOR VOLTAGE (V) 10 0.1 8 1 10 100 IC, COLLECTOR CURRENT (mA) Figure 2. DC Current Gain 2 900 TA = 25C 800 COLLECTOR VOLTAGE (mV) VCE , COLLECTOREMITTER VOLTAGE (V) Figure 1. IC - VCE 1.5 1 0.5 700 600 500 400 TA = 25C VCE = 5 V 300 200 100 0 0.01 0.1 1 IB, BASE CURRENT (mA) 10 0 0.2 100 1 5 10 20 40 60 80 100 150 200 Figure 4. On Voltage 20 7 6 Cob, CAPACITANCE (pF) 18 16 14 12 10 0.5 IC, COLLECTOR CURRENT (mA) Figure 3. Collector Saturation Region Cib, INPUT CAPACITANCE (pF) VCE = 10 V TA = 25C TA = 75C 140 A DC CURRENT GAIN IC, COLLECTOR CURRENT (mA) 60 5 4 3 2 0 1 2 3 1 4 0 10 20 VEB (V) VCB (V) Figure 5. Capacitance Figure 6. Capacitance http://onsemi.com 106 30 40 ON Semiconductor Switching Diode BAL99LT1 MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 70 Vdc Peak Forward Current IF 100 mAdc 3 1 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W PD 300 mW 2.4 mW/C RJA 417 C/W TJ, Tstg -55 to +150 C Total Device Dissipation FR-5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 2 CASE 318-08, STYLE 18 SOT-23 (TO-236AB) ANODE 3 CATHODE 2 DEVICE MARKING BAL99LT1 = JF ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max -- -- -- 2.5 30 50 70 -- -- -- -- -- 715 855 1000 1250 Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 70 Vdc) (VR = 25 Vdc, TJ = 150C) (VR = 70 Vdc, TJ = 150C) Adc IR Reverse Breakdown Voltage (IR = 100 Adc) V(BR) Vdc Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) VF Recovery Current (IF = 10 mAdc, VR = 5.0 Vdc, RL = 500 ) QS -- 45 pC Diode Capacitance (VR = 0, f = 1.0 MHz) CD -- 1.5 pF Reverse Recovery Time (IF = IR = 10 mAdc, RL = 100 , measured at IR = 1.0 mAdc) trr -- 6.0 ns VFR -- 1.75 Vdc Forward Recovery Voltage (IF = 10 mAdc, tr = 20 ns) mV 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 107 Publication Order Number: BAL99LT1/D BAL99LT1 TYPICAL CHARACTERISTICS 10 100 I R, REVERSE CURRENT (A) 10 TA = 85C TA = 25C 1.0 TA = 125C 1.0 TA = 85C 0.1 TA = 55C 0.01 TA = -40C 0.1 0.2 0.4 0.6 0.8 1.0 0.001 1.2 TA = 25C 0 10 20 30 VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 1. Forward Voltage Figure 2. Leakage Current 0.68 CD , DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) TA = 150C 0.64 0.60 0.56 0.52 0 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Capacitance http://onsemi.com 108 8 40 50 ON Semiconductor Switching Diode BAS116LT1 This switching diode has the following features: ON Semiconductor Preferred Device * Low Leakage Current Applications * Medium Speed Switching Times * Available in 8 mm Tape and Reel Use BAS116LT1 to order the 7 inch/3,000 unit reel Use BAS116LT3 to order the 13 inch/10,000 unit reel 3 1 1 ANODE 3 CATHODE 2 CASE 318-08, STYLE 8 SOT-23 (TO-236AB) MAXIMUM RATINGS Rating Symbol Value Unit VR 75 Vdc Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W PD 300 mW 2.4 mW/C RJA 417 C/W TJ, Tstg -55 to +150 C THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 TA = 25C Derate above 25C Board(1) Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature DEVICE MARKING BAS116LT1 = JV ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Min Max Unit V(BR) 75 -- Vdc Reverse Voltage Leakage Current (VR = 75 Vdc) Reverse Voltage Leakage Current (VR = 75 Vdc, TJ = 150C) IR -- -- 5.0 80 nAdc Forward Voltage (IF = 1.0 mAdc) Forward Voltage (IF = 10 mAdc) Forward Voltage (IF = 50 mAdc) Forward Voltage (IF = 150 mAdc) VF -- -- -- -- 900 1000 1100 1250 mV Diode Capacitance (VR = 0 V, f = 1.0 MHz) CD -- 2.0 pF Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1) trr -- 3.0 s Characteristic OFF CHARACTERISTICS Reverse Breakdown Voltage (IBR = 100 Adc) 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 2 109 Publication Order Number: BAS116LT1/D BAS116LT1 820 +10 V 2.0 k 100 H IF tp tr 0.1 F t IF trr 10% t 0.1 F 50 OUTPUT PULSE GENERATOR DUT 90% 50 INPUT SAMPLING OSCILLOSCOPE VR IR INPUT SIGNAL Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr Figure 1. Recovery Time Equivalent Test Circuit http://onsemi.com 110 iR(REC) = 1.0 mA OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) ON Semiconductor Switching Diode BAS16HT1 ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 75 Vdc Peak Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit PD 200 mW 1.57 mW/C RJA 635 C/W TJ, Tstg 150 C Peak Forward Surge Current 1 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board,* TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature CASE 477-02, STYLE 1 SOD323 1 CATHODE 2 ANODE **FR-4 Minimum Pad DEVICE MARKING BAS16HT1 = A6 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max -- -- -- 1.0 50 30 75 -- -- -- -- -- 715 855 1000 1250 Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 75 Vdc) (VR = 75 Vdc, TJ = 150C) (VR = 25 Vdc, TJ = 150C) Adc IR Reverse Breakdown Voltage (IBR = 100 Adc) V(BR) Vdc Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) VF mV Diode Capacitance (VR = 0, f = 1.0 MHz) CD -- 2.0 pF Forward Recovery Voltage (IF = 10 mAdc, tr = 20 ns) VFR -- 1.75 Vdc Reverse Recovery Time (IF = IR = 10 mAdc, RL = 50 ) trr -- 6.0 ns Stored Charge (IF = 10 mAdc to VR = 5.0 Vdc, RL = 500 ) QS -- 45 pC Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 May, 2001 - Rev. 1 111 Publication Order Number: BAS16HT1/D BAS16HT1 820 +10 V 2.0 k IF 100 H tp tr 0.1 F IF t trr 10% t 0.1 F 90% D.U.T. 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE IR VR INPUT SIGNAL iR(REC) = 1.0 mA OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr Figure 1. Recovery Time Equivalent Test Circuit 10 IR , REVERSE CURRENT (A) TA = 85C 10 TA = -40C 1.0 0.1 TA = 25C 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) TA = 125C 1.0 TA = 85C 0.1 TA = 55C 0.01 0.001 1.2 TA = 150C TA = 25C 10 0 Figure 2. Forward Voltage 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Leakage Current 0.68 CD, DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 100 0.64 0.60 0.56 0.52 0 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance http://onsemi.com 112 8 50 ON Semiconductor Switching Diode BAS16LT1 ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 75 Vdc Peak Forward Current IF 200 mAdc IFM(surge) 500 mAdc Peak Forward Surge Current 3 1 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 TA = 25C Derate above 25C Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W PD 300 mW 2.4 mW/C RJA 417 C/W TJ, Tstg -55 to +150 C Board(1) Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature CASE 318-08, STYLE 8 SOT-23 (TO-236AB) 3 CATHODE 1 ANODE DEVICE MARKING BAS16LT1 = A6 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Characteristic Min Max -- -- -- 1.0 50 30 75 -- -- -- -- -- 715 855 1000 1250 Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 75 Vdc) (VR = 75 Vdc, TJ = 150C) (VR = 25 Vdc, TJ = 150C) Adc IR Reverse Breakdown Voltage (IBR = 100 Adc) V(BR) Vdc Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) VF mV Diode Capacitance (VR = 0, f = 1.0 MHz) CD -- 2.0 pF Forward Recovery Voltage (IF = 10 mAdc, tr = 20 ns) VFR -- 1.75 Vdc Reverse Recovery Time (IF = IR = 10 mAdc, RL = 50 ) trr -- 6.0 ns Stored Charge (IF = 10 mAdc to VR = 5.0 Vdc, RL = 500 ) QS -- 45 pC 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 113 Publication Order Number: BAS16LT1/D BAS16LT1 820 +10 V 2.0 k 100 H IF tp tr 0.1 F IF t trr 10% t 0.1 F 90% D.U.T. 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE IR VR INPUT SIGNAL iR(REC) = 1.0 mA OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr Figure 1. Recovery Time Equivalent Test Circuit 10 IR , REVERSE CURRENT (A) TA = 85C 10 TA = -40C 1.0 0.1 TA = 25C 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) TA = 125C 1.0 TA = 85C 0.1 TA = 55C 0.01 0.001 1.2 TA = 150C TA = 25C 10 0 Figure 2. Forward Voltage 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Leakage Current 0.68 CD, DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 100 0.64 0.60 0.56 0.52 0 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance http://onsemi.com 114 8 50 BAS16TT1 Preferred Device Silicon Switching Diode MAXIMUM RATINGS (TA = 25C) Rating Continuous Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current Pulse Width = 10 s http://onsemi.com Symbol Max Unit VR 75 V IF 200 mA IFM(surge) 500 mA Symbol Max Unit 225 mW 3 CATHODE 1 ANODE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation, FR-4 Board (1) TA = 25C Derated above 25C PD Thermal Resistance, Junction to Ambient (1) RJA Total Device Dissipation, FR-4 Board (2) TA = 25C Derated above 25C PD Thermal Resistance, Junction to Ambient (2) Junction and Storage Temperature Range 1.8 mW/C 555 C/W 360 mW 2.9 mW/C RJA 345 C/W TJ, Tstg -55 to +150 C 3 2 1 CASE 463 SOT-416/SC-75 STYLE 2 DEVICE MARKING A6 (1) FR-4 @ Minimum Pad (2) FR-4 @ 1.0 x 1.0 Inch Pad ORDERING INFORMATION Device Package Shipping BAS16TT1 SOT-416 3000 / Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 May, 2000 - Rev. 1 115 Publication Order Number: BAS16TT1/D BAS16TT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max -- -- -- -- 715 866 1000 1250 -- -- -- 1.0 50 30 Unit Forward Voltage (IF = 1.0 mA) (IF = 10 mA) (IF = 50 mA) (IF = 150 mA) VF Reverse Current (VR = 75 V) (VR = 75 V, TJ = 150C) (VR = 25 V, TJ = 150C) IR Capacitance (VR = 0, f = 1.0 MHz) CD -- 2.0 pF Reverse Recovery Time (IF = IR = 10 mA, RL = 50 ) (Figure 1) trr -- 6.0 ns Stored Charge (IF = 10 mA to VR = 6.0 V, RL = 500 ) (Figure 2) QS -- 45 PC Forward Recovery Voltage (IF = 10 mA, tr = 20 ns) (Figure 3) VFR -- 1.75 V http://onsemi.com 116 mV A BAS16TT1 1 ns MAX 10% DUT 500 t trr tif 50 DUTY CYCLE = 2% 90% VF Irr 100 ns Figure 1. Reverse Recovery Time Equivalent Test Circuit OSCILLOSCOPE R 10 M C 7 pF 500 VC DUT 20 ns MAX D1 t 10% Qa VCM C 243 pF 100 K DUTY CYCLE = 2% t 90% Vf BAW62 VCM 400 ns Figure 2. Stored Charge Equivalent Test Circuit V 120 ns 450 1 K V 90% DUT Vfr t 10% DUTY CYCLE = 2% 2 ns MAX Figure 3. Forward Recovery Voltage Equivalent Test Circuit http://onsemi.com 117 50 BAS16TT1 10 IR , REVERSE CURRENT (A) IF, FORWARD CURRENT (mA) 100 10 TA = 85C TA = 25C 1.0 TA = -40C 0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) TA = 125C 1.0 TA = 85C 0.1 TA = 55C 0.01 0.001 1.2 TA = 150C TA = 25C 0 10 Figure 4. Forward Voltage 20 30 40 VR, REVERSE VOLTAGE (VOLTS) 50 Figure 5. Leakage Current CD, DIODE CAPACITANCE (pF) 0.68 0.64 0.60 0.56 0.52 2 0 4 6 8 VR, REVERSE VOLTAGE (VOLTS) r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE Figure 6. Capacitance 1.0 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 1.0 t, TIME (s) Figure 7. Normalized Thermal Response http://onsemi.com 118 10 100 1000 ON Semiconductor Silicon Switching Diode BAS16WT1 ON Semiconductor Preferred Device MAXIMUM RATINGS (TA = 25C) Rating Symbol Max Unit Continuous Reverse Voltage VR 75 V Recurrent Peak Forward Current IR 200 mA IFM(surge) 500 mA PD 200 mW 1.6 mW/C TJ, Tstg -55 to +150 C Symbol Max Unit RJA 0.625 C/mW Peak Forward Surge Current Pulse Width = 10 s Total Power Dissipation, One Diode Loaded TA = 25C Derate above 25C Mounted on a Ceramic Substrate (10 x 8 x 0.6 mm) Operating and Storage Junction Temperature Range 3 1 2 CASE 419-04, STYLE 2 SC-70/SOT-323 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient One Diode Loaded Mounted on a Ceramic Substrate (10 x 8 x 0.6 mm) 3 CATHODE 1 ANODE DEVICE MARKING BAS16WT1 = A6 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max -- -- -- -- 715 866 1000 1250 -- -- -- 1.0 50 30 Unit Forward Voltage (IF = 1.0 mA) (IF = 10 mA) (IF = 50 mA) (IF = 150 mA) VF mV Reverse Current (VR = 75 V) (VR = 75 V, TJ = 150C) (VR = 25 V, TJ = 150C) IR Capacitance (VR = 0, f = 1.0 MHz) CD -- 2.0 pF Reverse Recovery Time (IF = IR = 10 mA, RL = 50 ) (Figure 1) trr -- 6.0 ns Stored Charge (IF = 10 mA to VR = 6.0 V, RL = 500 ) (Figure 2) QS -- 45 PC Forward Recovery Voltage (IF = 10 mA, tr = 20 ns) (Figure 3) VFR -- 1.75 V A Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 2 119 Publication Order Number: BAS16WT1/D BAS16WT1 1 ns MAX 10% DUT 500 t trr tif 50 DUTY CYCLE = 2% 90% VF Irr 100 ns Figure 1. Reverse Recovery Time Equivalent Test Circuit OSCILLOSCOPE R 10 M C 7 pF 500 VC DUT 20 ns MAX D1 t 10% Qa VCM C 243 pF 100 K DUTY CYCLE = 2% t 90% Vf BAW62 VCM 400 ns Figure 2. Stored Charge Equivalent Test Circuit V 120 ns 450 1 K V 90% DUT Vfr t 10% DUTY CYCLE = 2% 2 ns MAX Figure 3. Forward Recovery Voltage Equivalent Test Circuit http://onsemi.com 120 50 BAS16WT1 10 IR , REVERSE CURRENT (A) 10 TA = 85C TA = 25C 1.0 TA = -40C 0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) TA = 125C 1.0 TA = 85C 0.1 TA = 55C 0.01 0.001 1.2 TA = 150C TA = 25C 0 10 Figure 4. Forward Voltage 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Leakage Current 0.68 CD, DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 100 0.64 0.60 0.56 0.52 0 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Capacitance http://onsemi.com 121 8 50 BAS20HT1 Preferred Device High Voltage Switching Diode * Device Marking: JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE MAXIMUM RATINGS Symbol Rating Value Unit VR Continuous Reverse Voltage 250 Vdc IF Peak Forward Current 200 mAdc Peak Forward Surge Current 625 mAdc Max Unit IFM(surge) 1 CATHODE 2 ANODE THERMAL CHARACTERISTICS Symbol PD RJA TJ, Tstg Characteristic Total Device Dissipation FR-5 Board,* TA = 25C Derate above 25C 200 mW 1.57 mW/C Thermal Resistance Junction to Ambient 635 C/W -55 to +150 C Junction and Storage Temperature Range 1 2 SOD-323 CASE 477 STYLE 1 *FR-5 Minimum Pad MARKING DIAGRAM JS M JS M = Specific Device Code = Date Code ORDERING INFORMATION Device Package Shipping BAS20HT1 SOD-323 3000/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 January, 2001 - Rev. 0 122 Publication Order Number: BAS20HT1/D BAS20HT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max - - 1.0 100 250 - - - 1000 1250 Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 200 Vdc) (VR = 200 Vdc, TJ = 150C) Adc IR Reverse Breakdown Voltage (IBR = 100 Adc) V(BR) Vdc Forward Voltage (IF = 100 mAdc) (IF = 200 mAdc) VF Diode Capacitance (VR = 0, f = 1.0 MHz) CD - 5.0 pF Reverse Recovery Time (IF = IR = 30 mAdc, RL = 100 ) trr - 50 ns http://onsemi.com 123 mV BAS20HT1 820 +10 V 2.0 k 100 H tp tr 0.1 F IF IF t trr 10% t 0.1 F 90% D.U.T. 50 Input Sampling Oscilloscope 50 Output Pulse Generator iR(REC) = 3.0 mA IR VR OUTPUT PULSE (IF = IR = 30 mA; MEASURED at iR(REC) = 3.0 mA) INPUT SIGNAL Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 30 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA. Notes: 3. tp trr Figure 1. Recovery Time Equivalent Test Circuit 100 IR , REVERSE CURRENT ( A) IF , FORWARD CURRENT (mA) 1000 100 55C 10 125C 25C 1.0 150C -40C 0.1 125C 55C 1.0 25C 0.1 0.01 -40C 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 50 100 150 200 VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 2. Forward Current Figure 3. Leakage Current 250 300 3.1 2.0 1.8 V F , FORWARD VOLTAGE (V) C T , TOTAL CAPACITANCE (pF) 150C 10 f = 1 MHz 1.6 IE = 0 A TA = 25C 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 3.0 -40C 25C 55C 125C 2.9 2.8 150C 2.7 2.6 2.5 2.4 2.3 2.2 0 5.0 10 15 20 25 30 35 0 25 50 75 100 125 150 175 200 225 250 VR, REVERSE VOLTAGE (V) IF, FORWARD CURRENT (mA) Figure 4. Total Capacitance Figure 5. Forward Voltage http://onsemi.com 124 BAS21HT1 Preferred Device High Voltage Switching Diode * Device Marking: JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE MAXIMUM RATINGS Symbol Rating Value Unit VR Continuous Reverse Voltage 250 Vdc IF Peak Forward Current 200 mAdc Peak Forward Surge Current 625 mAdc Max Unit 200 mW 1.57 mW/C 635 C/W -55 to +150 C IFM(surge) THERMAL CHARACTERISTICS Symbol PD RJA TJ, Tstg Characteristic Total Device Dissipation FR-5 Board,* TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature Range 1 2 PLASTIC SOD-323 CASE 477 *FR-5 Minimum Pad 1 CATHODE 2 ANODE ORDERING INFORMATION Device Package Shipping BAS21HT1 SOD-323 3000 / Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 January, 2000 - Rev. 0 125 Publication Order Number: BAS21HT1/D BAS21HT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max -- -- 1.0 100 250 -- -- -- 1000 1250 Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 200 Vdc) (VR = 200 Vdc, TJ = 150C) Adc IR Reverse Breakdown Voltage (IBR = 100 Adc) V(BR) Vdc Forward Voltage (IF = 100 mAdc) (IF = 200 mAdc) VF mV Diode Capacitance (VR = 0, f = 1.0 MHz) CD -- 5.0 pF Reverse Recovery Time (IF = IR = 30 mAdc, RL = 100 ) trr -- 50 ns Figure 6. 820 +10 V 2.0 k IF 100 H tr 0.1 F tp IF t trr 10% t 0.1 F 90% D.U.T. 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE VR iR(REC) = 3.0 mA IR OUTPUT PULSE (IF = IR = 30 mA; MEASURED at iR(REC) = 3.0 mA) INPUT SIGNAL Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 30 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA. Notes: 3. tp trr Figure 1. Recovery Time Equivalent Test Circuit 3500 2500 REVERSE CURRENT (nA) FORWARD VOLTAGE (mV) 3000 TA = -55C 2000 1500 TA = 155C 1000 TA = 25C 500 0 0.1 0.2 0.5 1 2 5 10 20 50 100 200 7000 6000 5000 4000 3000 TA = 155C 6 5 4 3 2 1 0 TA = 25C TA = -55C 1 2 5 10 20 50 FORWARD CURRENT (mA) REVERSE VOLTAGE (V) Figure 2. Forward Voltage Figure 3. Reverse Leakage http://onsemi.com 126 100 200 300 ON Semiconductor High Voltage Switching Diode BAS21LT1 ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Continuous Reverse Voltage VR 250 Vdc Peak Forward Current IF 200 mAdc IFM(surge) 625 mAdc Peak Forward Surge Current Unit 3 1 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 TA = 25C Derate above 25C Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W PD 300 mW 2.4 mW/C RJA 417 C/W TJ, Tstg -55 to +150 C Board(1) Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature CASE 318-08, STYLE 8 SOT-23 (TO-236AB) 3 CATHODE 1 ANODE DEVICE MARKING BAS21LT1 = JS ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Characteristic Min Max -- -- 1.0 100 250 -- -- -- 1000 1250 Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 200 Vdc) (VR = 200 Vdc, TJ = 150C) Adc IR Reverse Breakdown Voltage (IBR = 100 Adc) V(BR) Vdc Forward Voltage (IF = 100 mAdc) (IF = 200 mAdc) VF mV Diode Capacitance (VR = 0, f = 1.0 MHz) CD -- 5.0 pF Reverse Recovery Time (IF = IR = 30 mAdc, RL = 100 ) trr -- 50 ns 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Thermal Clad is a trademark of the Bergquist Company Semiconductor Components Industries, LLC, 2001 June, 2001 - Rev. 2 127 Publication Order Number: BAS21LT1/D BAS21LT1 820 +10 V 2.0 k IF 100 H tp tr 0.1 F IF t trr 10% t 0.1 F 90% D.U.T. 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE iR(REC) = 3.0 mA IR VR OUTPUT PULSE (IF = IR = 30 mA; MEASURED at iR(REC) = 3.0 mA) INPUT SIGNAL Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 30 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA. Notes: 3. tp trr Figure 1. Recovery Time Equivalent Test Circuit 3500 7000 6000 5000 2500 REVERSE CURRENT (nA) FORWARD VOLTAGE (mV) 3000 TA = -55C 2000 1500 TA = 155C 1000 TA = 25C 4000 3000 500 0 0.1 0.2 0.5 1 2 5 10 20 50 100 TA = 155C 200 6 5 4 3 2 1 0 TA = 25C TA = -55C 1 FORWARD CURRENT (mA) 2 5 10 20 50 REVERSE VOLTAGE (V) Figure 2. Forward Voltage Figure 3. Reverse Leakage http://onsemi.com 128 100 200 300 BAS21SLT1 Preferred Device Dual Series High Voltage Switching Diode * Moisture Sensitivity Level: 1 * ESD Rating - Human Body Model: Class 1 ESD Rating - Machine Model: Class B http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 250 Vdc Peak Forward Current IF 225 mAdc IFM(surge) 625 mAdc Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board (Note 1.) TA = 25C Derate above 25C PD 225 mW Peak Forward Surge Current ANODE 1 CATHODE 2 3 CATHODE/ANODE THERMAL CHARACTERISTICS Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (Note 2.) TA = 25C Derate above 25C mW/C 1.8 3 MARKING DIAGRAM 1 JS M 2 RJA 556 C/W PD 300 mW SOT-23 CASE 318 STYLE 11 JS = Device Code M = Date Code mW/C 2.4 Thermal Resistance, Junction to Ambient RJA 417 C/W Junction and Storage Temperature Range TJ, Tstg -55 to +150 C ORDERING INFORMATION Device BAS21SLT1 Package Shipping SOT-23 3000/Tape & Reel ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max - - 1.0 100 250 - - - 1000 1250 Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 200 Vdc) (VR = 200 Vdc, TJ = 150C) Reverse Breakdown Voltage (IBR = 100 Adc) Adc IR V(BR) Preferred devices are recommended choices for future use and best overall value. Vdc Forward Voltage (IF = 100 mAdc) (IF = 200 mAdc) VF mV Diode Capacitance (VR = 0, f = 1.0 MHz) CD - 5.0 pF Reverse Recovery Time (IF = IR = 30 mAdc, RL = 100 ) trr - 50 ns 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. Semiconductor Components Industries, LLC, 2001 February, 2001 - Rev. 1 129 Publication Order Number: BAS21SLT1/D BAS21SLT1 820 +10 V 2.0 k 100 H IF tp tr 0.1 F IF t trr 10% t 0.1 F 90% D.U.T. 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE VR iR(REC) = 3.0 mA IR OUTPUT PULSE (IF = IR = 30 mA; MEASURED at iR(REC) = 3.0 mA) INPUT SIGNAL Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 30 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA. Notes: 3. tp trr Figure 1. Recovery Time Equivalent Test Circuit 3000 2500 REVERSE CURRENT (nA) FORWARD VOLTAGE (mV) 3500 TA = -55C 2000 1500 TA = 155C 1000 TA = 25C 500 0 0.1 0.2 0.5 1 2 5 10 20 50 100 200 7000 6000 5000 TA = 155C 4000 3000 6 5 4 3 TA = 25C 2 1 0 TA = -55C 1 FORWARD CURRENT (mA) 2 5 10 20 50 REVERSE VOLTAGE (V) Figure 2. Forward Voltage Figure 3. Reverse Leakage http://onsemi.com 130 100 200 300 ON Semiconductor BAS40-04LT1 Dual Series Schottky Barrier Diode ON Semiconductor Preferred Device These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. * Extremely Fast Switching Speed * Low Forward Voltage 40 VOLTS SCHOTTKY BARRIER DIODES 3 MAXIMUM RATINGS (TJ = 150C unless otherwise noted) Rating 1 Symbol Value Unit Reverse Voltage VR 40 Volts Forward Power Dissipation @ TA = 25C Derate above 25C PF 225 1.8 mW mW/C -55 to +150 C Operating Junction and Storage Temperature Range TJ, Tstg 2 CASE 318-08, STYLE 11 SOT-23 (TO-236AB) ANODE 1 CATHODE 2 3 CATHODE/ANODE ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 A) Symbol Min Max Unit V(BR)R 40 -- Volts Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT -- 5.0 pF Reverse Leakage (VR = 25 V) IR -- 1.0 Adc Forward Voltage (IF = 0.1 mAdc) VF -- 380 mVdc Forward Voltage (IF = 30 mAdc) VF -- 500 mVdc Forward Voltage (IF = 100 mAdc) VF -- 1.0 Vdc Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 3 131 Publication Order Number: BAS40-04LT1/D BAS40-04LT1 IR , REVERSE CURRENT (A) 100 10 150C 1.0 125C 85C 25C 0.1 -40C 0 0.1 TA = 150C 125C 10 85C 1.0 0.1 25C 0.01 0.2 0.3 -55C 0.4 0.5 0.6 0.7 0.001 0.8 0 5.0 VF, FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage 10 15 VR, REVERSE VOLTAGE (VOLTS) 3.0 2.5 2.0 1.5 1.0 0.5 0 0 5.0 20 Figure 2. Reverse Current versus Reverse Voltage 3.5 C T, CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 100 10 15 20 25 30 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Capacitance http://onsemi.com 132 35 40 25 BAS40-06LT1 Preferred Device Common Anode Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. * Extremely Fast Switching Speed * Low Forward Voltage * Device Marking: L2 http://onsemi.com 40 VOLTS SCHOTTKY BARRIER DIODE 3 1 MAXIMUM RATINGS (TJ = 150C unless otherwise noted) Symbol VR Rating Reverse Voltage 2 Value Unit 40 Volts Max Unit 225 1.8 mW mW/C -55 to +150 C PLASTIC SOT-23 (TO-236AB) CASE 318 THERMAL CHARACTERISTICS Symbol PF TJ, Tstg Characteristic Forward Power Dissipation @ TA = 25C Derate above 25C Operating Junction and Storage Temperature Range CATHODE 1 ANODE 3 2 CATHODE ORDERING INFORMATION Device Package Shipping BAS40-06LT1 SOT-23 3000 / Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 April, 2000 - Rev. 3 133 Publication Order Number: BAS40-06LT1/D BAS40-06LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)R 40 -- Volts Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT -- 5.0 pF Reverse Leakage (VR = 25 V) IR -- 1.0 Adc Forward Voltage (IF = 0.1 mAdc) VF -- 380 mVdc Forward Voltage (IF = 30 mAdc) VF -- 500 mVdc Forward Voltage (IF = 100 mAdc) VF -- 1.0 Vdc Reverse Breakdown Voltage (IR = 10 A) IR , REVERSE CURRENT (A) 100 10 150C 1.0 125C 85C 25C 0.1 -40C 0 0.1 TA = 150C 125C 10 85C 1.0 0.1 25C 0.01 0.2 0.3 -55C 0.4 0.5 0.6 0.001 0.8 0.7 0 5.0 VF, FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage 10 15 VR, REVERSE VOLTAGE (VOLTS) 3.0 2.5 2.0 1.5 1.0 0.5 0 0 5.0 10 20 Figure 2. Reverse Current versus Reverse Voltage 3.5 C T, CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 100 15 20 25 30 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Capacitance http://onsemi.com 134 35 40 25 ON Semiconductor BAS40LT1 Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. ON Semiconductor Preferred Device 40 VOLTS SCHOTTKY BARRIER DIODES MAXIMUM RATINGS (TJ = 150C unless otherwise noted) 3 Symbol Value Unit Reverse Voltage VR 40 Volts Forward Power Dissipation @ TA = 25C Derate above 25C PF 225 1.8 mW mW/C -55 to +150 C Rating Operating Junction and Storage Temperature Range TJ, Tstg 1 2 CASE 318-08, STYLE 8 SOT-23 (TO-236AB) DEVICE MARKING BAS40LT1 = B1 3 CATHODE 1 ANODE ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)R 40 -- Volts Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT -- 5.0 pF Reverse Leakage (VR = 25 V) IR -- 1.0 Adc Forward Voltage (IF = 0.1 mAdc) VF -- 380 mVdc Forward Voltage (IF = 30 mAdc) VF -- 500 mVdc Forward Voltage (IF = 100 mAdc) VF -- 1.0 Vdc Reverse Breakdown Voltage (IR = 10 A) Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Thermal Clad is a registered trademark of the Bergquist Company. Semiconductor Components Industries, LLC, 2001 June, 2001 - Rev. 2 135 Publication Order Number: BAS40LT1/D BAS40LT1 IR , REVERSE CURRENT (A) 100 10 150C 1.0 125C 85C 25C 0.1 -40C 0 0.1 TA = 150C 125C 10 85C 1.0 0.1 25C 0.01 0.2 0.3 -55C 0.4 0.5 0.6 0.7 0.001 0.8 0 5.0 VF, FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage 10 15 VR, REVERSE VOLTAGE (VOLTS) 3.0 2.5 2.0 1.5 1.0 0.5 0 0 5.0 20 Figure 2. Reverse Current versus Reverse Voltage 3.5 C T, CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 100 10 15 20 25 30 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Capacitance http://onsemi.com 136 35 40 25 BAS70-04LT1 Preferred Device Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. * Extremely Fast Switching Speed * Low Forward Voltage * Device Marking: CG http://onsemi.com 70 VOLTS SCHOTTKY BARRIER DIODE 3 1 MAXIMUM RATINGS (TJ = 150C unless otherwise noted) Symbol VR Rating Reverse Voltage 2 Value Unit 70 Volts Max Unit 225 1.8 mW mW/C -55 to +150 C PLASTIC SOT-23 (TO-236AB) CASE 318 THERMAL CHARACTERISTICS Symbol PF TJ, Tstg Characteristic Forward Power Dissipation @ TA = 25C Derate above 25C Operating Junction and Storage Temperature Range ANODE 1 CATHODE 2 3 CATHODE/ANODE ORDERING INFORMATION Device Package Shipping BAS70-04LT1 SOT-23 3000 / Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 April, 2000 - Rev. 3 137 Publication Order Number: BAS70-04LT1/D BAS70-04LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit Reverse Breakdown Voltage (IR = 10 A) V(BR)R 70 -- Volts Total Capacitance (VR = 0 V, f = 1.0 MHz) CT -- 2.0 pF Reverse Leakage (VR = 50 V) (VR = 70 V) IR -- -- 0.1 10 Adc Forward Voltage (IF = 1.0 mAdc) VF -- 410 mVdc Forward Voltage (IF = 10 mAdc) VF -- 750 mVdc Forward Voltage (IF = 15 mAdc) VF -- 1.0 Vdc IR , REVERSE CURRENT (A) 100 10 1.0 150C 125C 0.1 0 0.1 0.3 0.4 0.5 0.6 125C 1.0 85C 0.1 25C -55C 0.2 TA = 150C 10 0.01 -40C 85C 25C 0.7 0.8 0.9 0.001 1.0 0 5.0 VF, FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage 10 25 15 20 30 35 VR, REVERSE VOLTAGE (VOLTS) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 5.0 10 40 45 Figure 2. Reverse Current versus Reverse Voltage 1.4 C T, CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 100 15 20 25 30 35 40 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Capacitance http://onsemi.com 138 45 50 50 ON Semiconductor BAS70LT1 Schottky Barrier Diodes ON Semiconductor Preferred Device These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. * Extremely Fast Switching Speed * Low Forward Voltage 70 VOLTS SCHOTTKY BARRIER DIODES MAXIMUM RATINGS (TJ = 150C unless otherwise noted) Rating 3 Symbol Value Unit Reverse Voltage VR 70 Volts Forward Power Dissipation @ TA = 25C Derate above 25C PF 225 1.8 mW mW/C -55 to +150 C Operating Junction and Storage Temperature Range TJ, Tstg DEVICE MARKING 1 2 CASE 318-08, STYLE 8 SOT-23 (TO-236AB) 3 CATHODE BAS70LT1 = BE 1 ANODE ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Min Max Unit Reverse Breakdown Voltage (IR = 10 A) Characteristic V(BR)R 70 -- Volts Total Capacitance (VR = 0 V, f = 1.0 MHz) CT -- 2.0 pF Reverse Leakage (VR = 50 V) (VR = 70 V) IR -- -- 0.1 10 Adc Forward Voltage (IF = 1.0 mAdc) VF -- 410 mVdc Forward Voltage (IF = 10 mAdc) VF -- 750 mVdc Forward Voltage (IF = 15 mAdc) VF -- 1.0 Vdc Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 2 139 Publication Order Number: BAS70LT1/D BAS70LT1 IR , REVERSE CURRENT (A) 100 10 1.0 150C 125C 0.1 0 0.1 0.3 0.4 0.5 125C 1.0 85C 0.1 25C -55C 0.2 TA = 150C 10 0.01 -40C 85C 25C 0.6 0.7 0.8 0.9 0.001 1.0 0 5.0 25 30 35 15 20 VR, REVERSE VOLTAGE (VOLTS) 10 VF, FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage 1.2 1.0 0.8 0.6 0.4 0.2 0 0 5.0 10 40 45 Figure 2. Reverse Current versus Reverse Voltage 1.4 C T, CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 100 15 20 25 30 35 40 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Capacitance http://onsemi.com 140 45 50 50 BAT54ALT1 Preferred Device Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. * Extremely Fast Switching Speed * Low Forward Voltage - 0.35 Volts (Typ) @ IF = 10 mAdc http://onsemi.com 30 VOLTS SCHOTTKY BARRIER DETECTOR AND SWITCHING DIODES CATHODE 1 ANODE 3 2 CATHODE MARKING DIAGRAM MAXIMUM RATINGS (TJ = 125C unless otherwise noted) Symbol Value Unit Reverse Voltage VR 30 Volts Forward Power Dissipation @ TA = 25C Derate above 25C PF 225 1.8 mW mW/C Rating Forward Current (DC) IF 200 Max mA Junction Temperature TJ 125 Max C Storage Temperature Range Tstg -55 to +150 C 3 3 B6 1 2 1 2 (TO-236AB) SOT-23 CASE 318 STYLE 12 ORDERING INFORMATION Device BAT54ALT1 Package Shipping SOT-23 3000/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 November, 2000 - Rev. 5 141 Publication Order Number: BAT54ALT1/D BAT54ALT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Typ Max Unit V(BR)R 30 - - Volts Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT - 7.6 10 pF Reverse Leakage (VR = 25 V) IR - 0.5 2.0 Adc Forward Voltage (IF = 0.1 mAdc) VF - 0.22 0.24 Vdc Forward Voltage (IF = 30 mAdc) VF - 0.41 0.5 Vdc Forward Voltage (IF = 100 mAdc) VF - 0.52 0.8 Vdc Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, Figure 1) trr - - 5.0 ns Forward Voltage (IF = 1.0 mAdc) VF - 0.29 0.32 Vdc Forward Voltage (IF = 10 mAdc) VF - 0.35 0.40 Vdc Forward Current (DC) IF - - 200 mAdc Repetitive Peak Forward Current IFRM - - 300 mAdc Non-Repetitive Peak Forward Current (t < 1.0 s) IFSM - - 600 mAdc Reverse Breakdown Voltage (IR = 10 A) http://onsemi.com 142 BAT54ALT1 820 +10 V 2k 100 H 0.1 F IF tr tp IF T 10% 0.1 F trr T DUT 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE 90% iR(REC) = 1 mA IR VR OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) INPUT SIGNAL Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr Figure 1. Recovery Time Equivalent Test Circuit 100 1000 TA = 150C IR, REVERSE CURRENT (A) 85C 10 150C 1.0 25C 0.1 0.0 -40C -55C 100 TA = 125C 10 1.0 TA = 85C 0.1 0.01 TA = 25C 0.001 0.2 0.3 0.4 0.1 0.5 VF, FORWARD VOLTAGE (VOLTS) 0 0.6 5 15 25 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 3. Leakage Current 14 CT, TOATAL CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 125C 12 10 8 6 4 2 0 0 5 10 15 20 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Total Capacitance http://onsemi.com 143 25 30 30 BAT54HT1 Preferred Device Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. * Extremely Fast Switching Speed * Low Forward Voltage -- 0.35 Volts (Typ) @ IF = 10 mAdc * Device Marking: JV http://onsemi.com 30 VOLT SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES 1 CATHODE 2 ANODE MAXIMUM RATINGS (TJ = 125C unless otherwise noted) Rating Reverse Voltage Symbol Value Unit VR 30 V Symbol Max Unit PD 200 mW 1.57 mW/C RJA 635 C/W TJ, Tstg 150 C THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board, (Note 1.) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature MARKING DIAGRAM 1 JV 1 2 2 PLASTIC SOD-323 CASE 477 ORDERING INFORMATION 1. FR-4 Minimum Pad Device Package Shipping BAT54HT1 SOD-323 3000/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 November, 2000 - Rev. 1 144 Publication Order Number: BAT54HT1/D BAT54HT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)R 30 -- -- Volts Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT -- 7.6 10 pF Reverse Leakage (VR = 25 V) IR -- 0.5 2.0 Adc Forward Voltage (IF = 0.1 mAdc) VF -- 0.22 0.24 Vdc Forward Voltage (IF = 30 mAdc) VF -- 0.41 0.5 Vdc Forward Voltage (IF = 100 mAdc) VF -- 0.52 0.8 Vdc Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1 trr -- -- 5.0 ns Forward Voltage (IF = 1.0 mAdc) VF -- 0.29 0.32 Vdc Forward Voltage (IF = 10 mAdc) VF -- 0.35 0.40 Vdc Forward Current (DC) IF -- -- 200 mAdc Repetitive Peak Forward Current IFRM -- -- 300 mAdc Non-Repetitive Peak Forward Current (t < 1.0 s) IFSM -- -- 600 mAdc Reverse Breakdown Voltage (IR = 10 A) http://onsemi.com 145 BAT54HT1 820 +10 V 2k 0.1 F t IF 100 H tp r 0.1 F IF t trr 10% t DUT 50 Output Pulse Generator 50 Input Sampling Oscilloscope 90% iR(REC) = 1 mA IR VR OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) INPUT SIGNAL Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr Figure 1. Recovery Time Equivalent Test Circuit 100 1000 1.0 IR, REVERSE CURRENT (A) 10 150C 125C 85C 25C 0.1 0.0 0.1 0.2 -40C 0.3 -55C 0.4 0.5 100 TA = 125C 10 1.0 TA = 85C 0.1 0.01 0.001 0.6 TA = 25C 0 VF, FORWARD VOLTAGE (VOLTS) 5 10 12 10 8 6 4 2 0 5 20 Figure 3. Leakage Current 14 0 15 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage CT, TOATAL CAPACITANCE (pF) IF, FORWARD CURRENT (mA) TA = 150C 10 15 20 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Total Capacitance http://onsemi.com 146 25 30 25 30 BAT54HT1 Preferred Device Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. * Extremely Fast Switching Speed * Low Forward Voltage -- 0.35 Volts (Typ) @ IF = 10 mAdc * Device Marking: JV http://onsemi.com 30 VOLT SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES 1 CATHODE 2 ANODE MAXIMUM RATINGS (TJ = 125C unless otherwise noted) Rating Reverse Voltage Symbol Value Unit VR 30 V Symbol Max Unit PD 200 mW 1.57 mW/C RJA 635 C/W TJ, Tstg 150 C THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board, (Note 1.) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature MARKING DIAGRAM 1 JV 1 2 2 PLASTIC SOD-323 CASE 477 ORDERING INFORMATION 1. FR-4 Minimum Pad Device Package Shipping BAT54HT1 SOD-323 3000/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 November, 2000 - Rev. 1 147 Publication Order Number: BAT54HT1/D BAT54HT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)R 30 -- -- Volts Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT -- 7.6 10 pF Reverse Leakage (VR = 25 V) IR -- 0.5 2.0 Adc Forward Voltage (IF = 0.1 mAdc) VF -- 0.22 0.24 Vdc Forward Voltage (IF = 30 mAdc) VF -- 0.41 0.5 Vdc Forward Voltage (IF = 100 mAdc) VF -- 0.52 0.8 Vdc Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1 trr -- -- 5.0 ns Forward Voltage (IF = 1.0 mAdc) VF -- 0.29 0.32 Vdc Forward Voltage (IF = 10 mAdc) VF -- 0.35 0.40 Vdc Forward Current (DC) IF -- -- 200 mAdc Repetitive Peak Forward Current IFRM -- -- 300 mAdc Non-Repetitive Peak Forward Current (t < 1.0 s) IFSM -- -- 600 mAdc Reverse Breakdown Voltage (IR = 10 A) http://onsemi.com 148 BAT54HT1 820 +10 V 2k 0.1 F t IF 100 H tp r 0.1 F IF t trr 10% t DUT 50 Output Pulse Generator 50 Input Sampling Oscilloscope 90% iR(REC) = 1 mA IR VR OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) INPUT SIGNAL Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr Figure 1. Recovery Time Equivalent Test Circuit 100 1000 1.0 IR, REVERSE CURRENT (A) 10 150C 125C 85C 25C 0.1 0.0 0.1 0.2 -40C 0.3 -55C 0.4 0.5 100 TA = 125C 10 1.0 TA = 85C 0.1 0.01 0.001 0.6 TA = 25C 0 VF, FORWARD VOLTAGE (VOLTS) 5 10 12 10 8 6 4 2 0 5 20 Figure 3. Leakage Current 14 0 15 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage CT, TOATAL CAPACITANCE (pF) IF, FORWARD CURRENT (mA) TA = 150C 10 15 20 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Total Capacitance http://onsemi.com 149 25 30 25 30 BAT54LT1 Preferred Device Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. * Extremely Fast Switching Speed * Low Forward Voltage - 0.35 Volts (Typ) @ IF = 10 mAdc http://onsemi.com 30 VOLTS SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES 3 CATHODE 1 ANODE MARKING DIAGRAM MAXIMUM RATINGS (TJ = 125C unless otherwise noted) 3 Symbol Value Unit Reverse Voltage VR 30 Volts Forward Power Dissipation @ TA = 25C Derate above 25C PF 200 2.0 mW mW/C Rating 3 JV3 1 Forward Current (DC) IF 200 Max mA Junction Temperature TJ 125 Max C Storage Temperature Range Tstg -55 to +150 C 1 2 2 (TO-236AB) SOT-23 CASE 318 STYLE 8 ORDERING INFORMATION Device Package Shipping BAT54LT1 SOT-23 3000/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 November, 2000 - Rev. 6 Publication Order Number: BAT54LT1/D BAT54LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)R 30 - - Volts Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT - 7.6 10 pF Reverse Leakage (VR = 25 V) IR - 0.5 2.0 Adc Forward Voltage (IF = 0.1 mAdc) VF - 0.22 0.24 Vdc Forward Voltage (IF = 30 mAdc) VF - 0.41 0.5 Vdc Forward Voltage (IF = 100 mAdc) VF - 0.52 0.8 Vdc Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, Figure 1) trr - - 5.0 ns Forward Voltage (IF = 1.0 mAdc) VF - 0.29 0.32 Vdc Forward Voltage (IF = 10 mAdc) VF - 0.35 0.40 Vdc Forward Current (DC) IF - - 200 mAdc Repetitive Peak Forward Current IFRM - - 300 mAdc Non-Repetitive Peak Forward Current (t < 1.0 s) IFSM - - 600 mAdc Reverse Breakdown Voltage (IR = 10 A) http://onsemi.com 151 BAT54LT1 820 +10 V 2k 100 H 0.1 F IF tr tp IF T 10% 0.1 F trr T DUT 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE 90% iR(REC) = 1 mA IR VR OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) INPUT SIGNAL Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr Figure 1. Recovery Time Equivalent Test Circuit 100 1000 TA = 150C IR, REVERSE CURRENT (A) 85C 10 150C 1.0 25C 0.1 0.0 -40C -55C 100 TA = 125C 10 1.0 TA = 85C 0.1 0.01 TA = 25C 0.001 0.2 0.3 0.4 0.1 0.5 VF, FORWARD VOLTAGE (VOLTS) 0 0.6 5 15 25 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 3. Leakage Current 14 CT, TOATAL CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 125C 12 10 8 6 4 2 0 0 5 10 15 20 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Total Capacitance http://onsemi.com 152 25 30 30 BAT54SLT1 Preferred Device Dual Series Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. * Extremely Fast Switching Speed * Low Forward Voltage - 0.35 Volts (Typ) @ IF = 10 mAdc http://onsemi.com 30 VOLT DUAL HOT-CARRIER DETECTOR AND SWITCHING DIODES 1 ANODE 2 CATHODE 3 CATHODE/ANODE MARKING DIAGRAM MAXIMUM RATINGS (TJ = 125C unless otherwise noted) Symbol Value Unit Reverse Voltage VR 30 Volts Forward Power Dissipation @ TA = 25C Derate above 25C PF 225 1.8 mW mW/C Rating 3 3 LD3 Forward Current (DC) IF 200 Max mA Junction Temperature TJ 125 Max C Storage Temperature Range Tstg -55 to +150 C 1 1 2 2 (TO-236AB) SOT-23 CASE 318 STYLE 11 ORDERING INFORMATION Device BAT54SLT1 Package Shipping SOT-23 3000/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 November, 2000 - Rev. 6 153 Publication Order Number: BAT54SLT1/D BAT54SLT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Typ Max Unit V(BR)R 30 - - Volts Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT - 7.6 10 pF Reverse Leakage (VR = 25 V) IR - 0.5 2.0 Adc Forward Voltage (IF = 0.1 mAdc) VF - 0.22 0.24 Vdc Forward Voltage (IF = 30 mAdc) VF - 0.41 0.5 Vdc Forward Voltage (IF = 100 mAdc) VF - 0.52 0.8 Vdc Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, Figure 1) trr - - 5.0 ns Forward Voltage (IF = 1.0 mAdc) VF - 0.29 0.32 Vdc Forward Voltage (IF = 10 mAdc) VF - 0.35 0.40 Vdc Forward Current (DC) IF - - 200 mAdc Repetitive Peak Forward Current IFRM - - 300 mAdc Non-Repetitive Peak Forward Current (t < 1.0 s) IFSM - - 600 mAdc Reverse Breakdown Voltage (IR = 10 A) http://onsemi.com 154 BAT54SLT1 820 +10 V 2k 100 H 0.1 F IF tr tp IF T 10% 0.1 F trr T DUT 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE 90% iR(REC) = 1 mA IR VR OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) INPUT SIGNAL Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr Figure 1. Recovery Time Equivalent Test Circuit 100 1000 TA = 150C IR, REVERSE CURRENT (A) 85C 10 150C 1.0 25C 0.1 0.0 -40C -55C 100 TA = 125C 10 1.0 TA = 85C 0.1 0.01 TA = 25C 0.001 0.2 0.3 0.4 0.1 0.5 VF, FORWARD VOLTAGE (VOLTS) 0 0.6 5 15 25 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 3. Leakage Current 14 CT, TOATAL CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 125C 12 10 8 6 4 2 0 0 5 10 15 20 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Total Capacitance http://onsemi.com 155 25 30 30 BAT54SWT1 Preferred Device Dual Series Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. http://onsemi.com 30 VOLT DUAL SERIES SCHOTTKY BARRIER DIODES * Extremely Fast Switching Speed * Low Forward Voltage - 0.35 Volts (Typ) @ IF = 10 mAdc 1 ANODE 2 CATHODE 3 CATHODE/ANODE MARKING DIAGRAM MAXIMUM RATINGS (TJ = 125C unless otherwise noted) Symbol Value Unit Reverse Voltage VR 30 Volts Forward Power Dissipation @ TA = 25C Derate above 25C PF 200 1.6 mW mW/C Forward Current (DC) IF 200 Max mA Junction Temperature TJ 125 Max C Storage Temperature Range Tstg -55 to +150 C Rating 3 3 B8 1 2 (SC-70) SOT-323 CASE 419 STYLE 9 1 2 ORDERING INFORMATION Device Package Shipping BAT54SWT1 SOT-323 3000/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 November, 2000 - Rev. 5 156 Publication Order Number: BAT54SWT1/D BAT54SWT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Typ Max Unit V(BR)R 30 - - Volts Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT - 7.6 10 pF Reverse Leakage (VR = 25 V) IR - 0.5 2.0 Adc Forward Voltage (IF = 0.1 mAdc) VF - 0.22 0.24 Vdc Forward Voltage (IF = 30 mAdc) VF - 0.41 0.5 Vdc Forward Voltage (IF = 100 mAdc) VF - 0.52 0.8 Vdc Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, Figure 1) trr - - 5.0 ns Forward Voltage (IF = 1.0 mAdc) VF - 0.29 0.32 Vdc Forward Voltage (IF = 10 mAdc) VF - 0.35 0.40 Vdc Forward Current (DC) IF - - 200 mAdc Repetitive Peak Forward Current IFRM - - 300 mAdc Non-Repetitive Peak Forward Current (t < 1.0 s) IFSM - - 600 mAdc Reverse Breakdown Voltage (IR = 10 A) http://onsemi.com 157 BAT54SWT1 820 +10 V 2k 100 H 0.1 F IF tr tp IF T 10% 0.1 F trr T DUT 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE 90% iR(REC) = 1 mA IR VR OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) INPUT SIGNAL Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr Figure 1. Recovery Time Equivalent Test Circuit 100 1000 TA = 150C IR, REVERSE CURRENT (A) 85C 10 150C 1.0 25C 0.1 0.0 -40C -55C 100 TA = 125C 10 1.0 TA = 85C 0.1 0.01 TA = 25C 0.001 0.2 0.3 0.4 0.1 0.5 VF, FORWARD VOLTAGE (VOLTS) 0 0.6 5 15 25 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 3. Leakage Current 14 CT, TOATAL CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 125C 12 10 8 6 4 2 0 0 5 10 15 20 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Total Capacitance http://onsemi.com 158 25 30 30 BAT54T1 Preferred Device Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. * Extremely Fast Switching Speed * Low Forward Voltage - 0.35 Volts (Typ) @ IF = 10 mAdc http://onsemi.com 30 VOLT SCHOTTKY BARRIER DETECTOR AND SWITCHING DIODES 1 CATHODE 2 ANODE MARKING DIAGRAM 2 AA AA AA BU 1 1 SOD-123 CASE 425 STYLE 1 MAXIMUM RATINGS (TJ = 125C unless otherwise noted) Rating Symbol Value Unit Reverse Voltage VR 30 Volts Forward Power Dissipation, FR-5 Board (Note 1.) @ TA = 25C Derate above 25C PF mW mW/C Thermal Resistance, Junction to Case RJL 174 C/W Thermal Resistance, Junction to Ambient RJA 492 C/W Forward Current (DC) ORDERING INFORMATION Device 400 3.2 IF 200 Max mA Non-Repetitive Peak Forward Current tp < 10 msec IFSM 600 mA Repetitive Peak Forward Current Pulse Wave = 1 sec, Duty Cycle = 66% IFRM 300 mA Junction Temperature TJ 125 Max C Storage Temperature Range Tstg -55 to +150 C 2 BAT54T1 Package Shipping SOD-123 3000/Tape & Reel Preferred devices are recommended choices for future use and best overall value. 1. FR-5 = 1.0 x 0.75 x 0.062 in. Semiconductor Components Industries, LLC, 2001 November, 2000 - Rev. 6 159 Publication Order Number: BAT54T1/D BAT54T1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)R 30 - - Volts Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT - 7.6 10 pF Reverse Leakage (VR = 25 V) IR - 0.5 2.0 Adc Forward Voltage (IF = 0.1 mAdc) VF - 0.22 0.24 Vdc Forward Voltage (IF = 30 mAdc) VF - 0.41 0.5 Vdc Forward Voltage (IF = 100 mAdc) VF - 0.52 0.8 Vdc Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, Figure 1) trr - - 5.0 ns Forward Voltage (IF = 1.0 mAdc) VF - 0.29 0.32 Vdc Forward Voltage (IF = 10 mAdc) VF - 0.35 0.40 Vdc Forward Current (DC) IF - - 200 mAdc Repetitive Peak Forward Current IFRM - - 300 mAdc Non-Repetitive Peak Forward Current (t < 1.0 s) IFSM - - 600 mAdc Reverse Breakdown Voltage (IR = 10 A) http://onsemi.com 160 BAT54T1 820 +10 V 2k 100 H 0.1 F IF tr tp IF t 10% 0.1 F trr t DUT 50 Output Pulse Generator 90% 50 Input Sampling Oscilloscope iR(REC) = 1 mA IR VR OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) INPUT SIGNAL Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr Figure 1. Recovery Time Equivalent Test Circuit 100 1000 TA = 150C IR, REVERSE CURRENT (A) 85C 10 150C 1.0 25C 0.1 0.0 -40C -55C 100 TA = 125C 10 1.0 TA = 85C 0.1 0.01 TA = 25C 0.001 0.2 0.3 0.4 0.1 0.5 VF, FORWARD VOLTAGE (VOLTS) 0 0.6 5 15 25 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 3. Leakage Current 14 CT, TOATAL CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 125C 12 10 8 6 4 2 0 0 5 10 15 20 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Total Capacitance http://onsemi.com 161 25 30 30 BAT54WT1 Preferred Device Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. * Extremely Fast Switching Speed * Extremely Low Forward Voltage - 0.35 Volts (Typ) @ IF = 10 mAdc http://onsemi.com 30 VOLT SCHOTTKY BARRIER DETECTOR AND SWITCHING DIODE 3 CATHODE 1 ANODE MARKING DIAGRAM MAXIMUM RATINGS (TJ = 125C unless otherwise noted) Symbol Value Unit Reverse Voltage VR 30 Volts Forward Power Dissipation @ TA = 25C Derate above 25C PF 200 1.6 mW mW/C Forward Current (DC) IF 200 Max mA Junction Temperature TJ 125 Max C Storage Temperature Range Tstg -55 to +150 C Rating 3 3 B4 1 2 (SC-70) SOT-323 CASE 419 STYLE 2 1 2 ORDERING INFORMATION Device BAT54WT1 Package Shipping SOT-323 3000/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 November, 2000 - Rev. 5 162 Publication Order Number: BAT54WT1/D BAT54WT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)R 30 - - Volts Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT - 7.6 10 pF Reverse Leakage (VR = 25 V) IR - 0.5 2.0 Adc Forward Voltage (IF = 0.1 mAdc) VF - 0.22 0.24 Vdc Forward Voltage (IF = 30 mAdc) VF - 0.41 0.5 Vdc Forward Voltage (IF = 100 mAdc) VF - 0.52 0.8 Vdc Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, Figure 1) trr - - 5.0 ns Forward Voltage (IF = 1.0 mAdc) VF - 0.29 0.32 Vdc Forward Voltage (IF = 10 mAdc) VF - 0.35 0.40 Vdc Forward Current (DC) IF - - 200 mAdc Repetitive Peak Forward Current IFRM - - 300 mAdc Non-Repetitive Peak Forward Current (t < 1.0 s) IFSM - - 600 mAdc Reverse Breakdown Voltage (IR = 10 A) http://onsemi.com 163 BAT54WT1 820 +10 V 2k 100 H 0.1 F IF tr tp IF T 10% 0.1 F trr T DUT 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE 90% iR(REC) = 1 mA IR VR OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) INPUT SIGNAL Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr Figure 1. Recovery Time Equivalent Test Circuit 100 1000 TA = 150C IR, REVERSE CURRENT (A) 85C 10 150C 1.0 25C 0.1 0.0 -40C -55C 100 TA = 125C 10 1.0 TA = 85C 0.1 0.01 TA = 25C 0.001 0.2 0.3 0.4 0.1 0.5 VF, FORWARD VOLTAGE (VOLTS) 0 0.6 5 15 25 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 3. Leakage Current 14 CT, TOATAL CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 125C 12 10 8 6 4 2 0 0 5 10 15 20 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Total Capacitance http://onsemi.com 164 25 30 30 ON Semiconductor Dual Series Switching Diode BAV199LT1 This switching diode has the following features: ON Semiconductor Preferred Device * Low Leakage Current Applications * Medium Speed Switching Times * Available in 8 mm Tape and Reel Use BAV199LT1 to order the 7 inch/3,000 unit reel Use BAV199LT3 to order the 13 inch/10,000 unit reel 3 1 ANODE 1 CATHODE 2 2 CASE 318-08, STYLE 11 SOT-23 (TO-236AB) 3 CATHODE/ANODE MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 215 mAdc Peak Forward Surge Current IFM(surge) 500 mAdc Repetitive Peak Reverse Voltage VRRM 70 Vdc Average Rectified Forward Current(1) (averaged over any 20 ms period) IF(AV) 715 mAdc Repetitive Peak Forward Current IFRM 450 mAdc Non-Repetitive Peak Forward Current t = 1.0 s t = 1.0 ms t = 1.0 A IFSM 2.0 1.0 0.5 Adc Symbol Max Unit PD 225 1.8 mW mW/C RJA 556 C/W PD 300 mW 2.4 mW/C RJA 417 C/W TJ, Tstg -65 to +150 C THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature DEVICE MARKING BAV199LT1 = JY 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 2 165 Publication Order Number: BAV199LT1/D BAV199LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Max Unit V(BR) 70 -- Vdc -- -- 5.0 80 -- 2.0 -- -- -- -- 900 1000 1100 1250 -- 3.0 OFF CHARACTERISTICS Reverse Breakdown Voltage (I(BR) = 100 Adc) Reverse Voltage Leakage Current (VR = 70 Vdc) (VR = 70 Vdc, TJ = 150C) IR Diode Capacitance (VR = 0 V, f = 1.0 MHz) CD Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) VF Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1) trr nAdc pF mVdc s 820 +10 V 2.0 k 100 H tr 0.1 F IF tp t IF trr 10% t 0.1 F 50 OUTPUT PULSE GENERATOR DUT 90% 50 INPUT SAMPLING OSCILLOSCOPE VR IR INPUT SIGNAL iR(REC) = 1.0 mA OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr Figure 1. Recovery Time Equivalent Test Circuit http://onsemi.com 166 ON Semiconductor Monolithic Dual Switching Diode Common Cathode BAV70LT1 MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Peak Forward Surge Current 3 1 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 TA = 25C Derate above 25C Board(1) Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W PD 300 mW 2.4 mW/C RJA 417 C/W TJ, Tstg -55 to +150 C CASE 318-08, STYLE 9 SOT-23 (TO-236AB) ANODE 1 3 CATHODE 2 ANODE DEVICE MARKING BAV70LT1 = A4 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Max Unit V(BR) 70 -- Vdc -- -- -- 60 2.5 100 -- 1.5 -- -- -- -- 715 855 1000 1250 -- 6.0 OFF CHARACTERISTICS Reverse Breakdown Voltage (I(BR) = 100 Adc) Reverse Voltage Leakage Current (Note 3) (VR = 25 Vdc, TJ = 150C) (VR = 70 Vdc) (VR = 70 Vdc, TJ = 150C) IR Diode Capacitance (VR = 0, f = 1.0 MHz) CD Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) VF Reverse Recovery Time RL = 100 (IF = IR = 10 mAdc, VR = 5.0 Vdc, IR(REC) = 1.0 mAdc) (Figure 1) trr Adc pF mVdc ns 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. For each individual diode while second diode is unbiased. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 167 Publication Order Number: BAV70LT1/D BAV70LT1 820 +10 V 2.0 k 100 H IF tp tr 0.1 F IF t trr 10% t 0.1 F 90% D.U.T. 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE IR VR INPUT SIGNAL iR(REC) = 1.0 mA OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr Figure 1. Recovery Time Equivalent Test Circuit Curves Applicable to Each Anode 10 IR , REVERSE CURRENT (A) TA = 85C 10 TA = -40C 1.0 0.1 TA = 25C 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) TA = 125C 1.0 TA = 85C 0.1 TA = 55C 0.01 0.001 1.2 TA = 150C TA = 25C 0 10 Figure 2. Forward Voltage 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Leakage Current 1.0 CD, DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 100 0.9 0.8 0.7 0.6 0 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance http://onsemi.com 168 8 50 BAV70TT1 Preferred Device Dual Switching Diode MAXIMUM RATINGS (TA = 25C) Rating http://onsemi.com Symbol Max Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit 225 mW 1.8 mW/C 555 C/W 360 mW 2.9 mW/C Peak Forward Surge Current ANODE 1 3 CATHODE 2 ANODE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation, FR-4 Board (1) TA = 25C Derated above 25C PD Thermal Resistance, Junction to Ambient (1) RJA Total Device Dissipation, FR-4 Board (2) TA = 25C Derated above 25C PD Thermal Resistance, Junction to Ambient (2) RJA 345 C/W TJ, Tstg -55 to +150 C Junction and Storage Temperature Range 3 2 1 CASE 463 SOT-416/SC-75 STYLE 3 DEVICE MARKING A4 (1) FR-4 @ Minimum Pad (2) FR-4 @ 1.0 x 1.0 Inch Pad ORDERING INFORMATION Device Package Shipping BAV70TT1 SOT-416 3000 / Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 May, 2000 - Rev. 1 169 Publication Order Number: BAV70TT1/D BAV70TT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR) 70 -- Vdc IR IR -- -- 5.0 100 Adc nAdc Diode Capacitance (VR = 0, f = 1.0 MHz) CD -- 1.5 pF Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) VF -- -- -- -- 715 855 1000 1250 Reverse Recovery Time (IF = IR = 10 mAdc, RL = 100 , IR(REC) = 1.0 mAdc) (Figure 1) trr -- 6.0 ns VRF -- 1.75 V OFF CHARACTERISTICS Reverse Breakdown Voltage (I(BR) = 100 Adc) Reverse Voltage Leakage Current (Note 3) (VR = 70 Vdc) (VR = 50 Vdc) Forward Recovery Voltage (IF = 10 mAdc, tr = 20 ns) (Figure 2) (3) For each individual diode while the second diode is unbiased. http://onsemi.com 170 mVdc BAV70TT1 BAV70 RS = 50 SAMPLING OSCILLOSCOPE RL = 50 IF tr tp I 10% +IF trr 10%OF 90% VR OUTPUT PULSE INPUT PULSE Figure 1. Recovery Time Equivalent Test Circuit 450 1 K RS = 50 SAMPLING OSCILLOSCOPE RL = 50 BAV70 I V 90% VFR 10% t tr tp INPUT PULSE Figure 2. http://onsemi.com 171 OUTPUT PULSE t VR 100 BAV70TT1 10 IR , REVERSE CURRENT (A) IF, FORWARD CURRENT (mA) 100 10 TA = 85C TA = 25C 1.0 TA = -40C 0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) TA = 125C 1.0 TA = 85C 0.1 TA = 55C 0.01 0.001 1.2 TA = 150C TA = 25C 0 10 Figure 3. Forward Voltage 20 30 40 VR, REVERSE VOLTAGE (VOLTS) 50 Figure 4. Leakage Current CD, DIODE CAPACITANCE (pF) 1.0 0.9 0.8 0.7 0.6 2 0 4 6 8 VR, REVERSE VOLTAGE (VOLTS) r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE Figure 5. Capacitance 1.0 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 1.0 t, TIME (s) Figure 6. Normalized Thermal Response http://onsemi.com 172 10 100 1000 ON Semiconductor Dual Switching Diode BAV70WT1 ON Semiconductor Preferred Device MAXIMUM RATINGS (TA = 25C) Symbol Max Unit Reverse Voltage Rating VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Peak Forward Surge Current 3 1 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 TA = 25C Derate above 25C Board(1) Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol Max Unit PD 200 mW 1.6 mW/C RJA 0.625 C/W PD 300 mW 2.4 mW/C RJA 417 C/W TJ, Tstg -55 to +150 C DEVICE MARKING CASE 419-04, STYLE 5 SC-70/SOT-323 ANODE 1 3 CATHODE 2 BAV70WT1 = A4 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR) 70 -- Vdc IR IR -- -- 5.0 100 Adc nAdc Diode Capacitance (VR = 0, f = 1.0 MHz) CD -- 1.5 pF Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) VF -- -- -- -- 715 855 1000 1250 Reverse Recovery Time (IF = IR = 10 mAdc, RL = 100 , IR(REC) = 1.0 mAdc) (Figure 1) trr -- 6.0 ns VRF -- 1.75 V OFF CHARACTERISTICS Reverse Breakdown Voltage (I(BR) = 100 Adc) Reverse Voltage Leakage Current (Note 3) (VR = 70 Vdc) (VR = 50 Vdc) Forward Recovery Voltage (IF = 10 mAdc, tr = 20 ns) (Figure 2) mVdc 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. For each individual diode while the second diode is unbiased. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 173 Publication Order Number: BAV70WT1/D BAV70WT1 BAV70 RS = 50 SAMPLING OSCILLOSCOPE RL = 50 IF tr tp I 10% +IF trr 10%OF 90% VR OUTPUT PULSE INPUT PULSE Figure 1. Recovery Time Equivalent Test Circuit 450 1 K RS = 50 SAMPLING OSCILLOSCOPE RL = 50 BAV70 I V 90% VFR 10% t tr tp INPUT PULSE Figure 2. http://onsemi.com 174 OUTPUT PULSE t VR 100 BAV70WT1 10 IR , REVERSE CURRENT (A) 10 TA = 85C TA = 25C 1.0 TA = -40C 0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) TA = 125C 1.0 TA = 85C 0.1 TA = 55C 0.01 0.001 1.2 TA = 150C TA = 25C 0 10 Figure 3. Forward Voltage 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Leakage Current 1.0 CD, DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 100 0.9 0.8 0.7 0.6 0 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Capacitance http://onsemi.com 175 8 50 ON Semiconductor Monolithic Dual Switching Diode BAV74LT1 MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage VR 50 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Peak Forward Surge Current 3 1 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 TA = 25C Derate above 25C Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W PD 300 mW 2.4 mW/C RJA 417 C/W TJ, Tstg -55 to +150 C Board(1) Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature CASE 318-08, STYLE 9 SOT-23 (TO-236AB) ANODE 1 3 CATHODE 2 ANODE DEVICE MARKING BAV74LT1 = JA ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Max Unit V(BR) 50 -- Vdc -- -- 100 0.1 OFF CHARACTERISTICS Reverse Breakdown Voltage (I(BR) = 5.0 Adc) Adc Reverse Voltage Leakage Current (Note 3.) (VR = 50 Vdc, TJ = 125C) (VR = 50 Vdc) IR Diode Capacitance (VR = 0, f = 1.0 MHz) CD -- 2.0 pF Forward Voltage (IF = 100 mAdc) VF -- 1.0 Vdc Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, measured at IR = 1.0 mA, RL = 100 ) trr -- 4.0 ns 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. For each individual diode while the second diode is unbiased. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 176 Publication Order Number: BAV74LT1/D BAV74LT1 Curves Applicable to Each Anode 10 IR , REVERSE CURRENT (A) TA = 85C 10 TA = -40C 1.0 0.1 TA = 25C 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) TA = 125C 1.0 TA = 85C 0.1 TA = 55C 0.01 0.001 1.2 TA = 150C TA = 25C 10 0 Figure 1. Forward Voltage 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Leakage Current 1.0 CD, DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 100 0.9 0.8 0.7 0.6 0 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Capacitance http://onsemi.com 177 8 50 BAV99LT1 Preferred Device Dual Series Switching Diode MAXIMUM RATINGS (Each Diode) Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 215 mAdc IFM(surge) 500 mAdc Repetitive Peak Reverse Voltage VRRM 70 V Average Rectified Forward Current (Note 1.) (averaged over any 20 ms period) IF(AV) 715 mA Repetitive Peak Forward Current IFRM 450 mA Non-Repetitive Peak Forward Current t = 1.0 s t = 1.0 ms t = 1.0 S IFSM Peak Forward Surge Current http://onsemi.com ANODE 1 3 CATHODE/ANODE A MARKING DIAGRAM 3 2.0 1.0 0.5 1 A7 M 2 THERMAL CHARACTERISTICS Characteristic CATHODE 2 Symbol Max Unit PD 225 mW 1.8 mW/C 556 C/W Total Device Dissipation FR-5 Board (Note 1.) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient RJA CASE 318 SOT-23 STYLE 11 A7 = Device Code M = Date Code ORDERING INFORMATION Total Device Dissipation Alumina Substrate (Note 2.) TA = 25C Derate above 25C PD 300 mW 2.4 mW/C C/W Thermal Resistance, Junction to Ambient RJA 417 Junction and Storage Temperature Range TJ, Tstg -65 to +150 Device Package Shipping BAV99LT1 SOT-23 3000/Tape & Reel Preferred devices are recommended choices for future use and best overall value. C OFF CHARACTERISTICS (TA = 25C unless otherwise noted) (Each Diode) Characteristic Symbol Min Max Unit V(BR) 70 - Vdc Reverse Voltage Leakage Current (VR = 70 Vdc) (VR = 25 Vdc, TJ = 150C) (VR = 70 Vdc, TJ = 150C) IR - - - 2.5 30 50 Adc Diode Capacitance (VR = 0, f = 1.0 MHz) CD - 1.5 pF Forward Voltage VF - - - - 715 855 1000 1250 mVdc trr - 6.0 ns VFR - 1.75 V Reverse Breakdown Voltage (I(BR) = 100 A) (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc, iR(REC) = 1.0 mAdc) (Figure 1) RL = 100 Forward Recovery Voltage (IF = 10 mA, tr = 20 ns) 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. Semiconductor Components Industries, LLC, 2001 September, 2000 - Rev. 1 178 Publication Order Number: BAV99LT1/D BAV99LT1 820 +10 V 2k 100 H 0.1 F IF tr tp IF t trr 10% 0.1 F DUT 50 OUTPUT PULSE GENERATOR 90% 50 INPUT SAMPLING OSCILLOSCOPE IR VR INPUT SIGNAL t iR(REC) = 1 mA OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr Figure 1. Recovery Time Equivalent Test Circuit CURVES APPLICABLE TO EACH DIODE 10 100 I R, REVERSE CURRENT (A) 10 TA = 85C TA = 25C 1.0 TA = -40C 0.1 0.2 0.4 0.6 0.8 1.0 TA = 85C 0.1 TA = 55C 0.01 0.001 1.2 TA = 125C 1.0 TA = 25C 10 0 20 30 VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 3. Leakage Current 0.68 CD , DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) TA = 150C 0.64 0.60 0.56 0.52 0 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance http://onsemi.com 179 8 40 50 BAV99WT1, BAV99RWT1 Preferred Devices Dual Series Switching Diodes The BAV99WT1 is a smaller package, equivalent to the BAV99LT1. Suggested Applications * * * * * ESD Protection Polarity Reversal Protection Data Line Protection Inductive Load Protection Steering Logic http://onsemi.com ANODE 1 3 CATHODE/ANODE MAXIMUM RATINGS (Each Diode) Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 215 mAdc Rating Peak Forward Surge Current CATHODE 2 IFM(surge) 500 mAdc Repetitive Peak Reverse Voltage VRRM 70 V Average Rectified Forward Current (Note 1.) (averaged over any 20 ms period) IF(AV) 715 mA Repetitive Peak Forward Current IFRM 450 Non-Repetitive Peak Forward Current t = 1.0 s t = 1.0 ms t = 1.0 S IFSM BAV99WT1 CASE 419-02, STYLE 9 SC-70/SOT-323 CATHODE 1 ANODE 2 3 CATHODE/ANODE BAV99RWT1 CASE 419-02, STYLE 10 SC-70/SOT-323 mA A 2.0 1.0 0.5 3 1. FR-5 = 1.0 0.75 0.062 in. 1 2 SC-70 CASE 419 MARKING DIAGRAM x7 A7 = BAV99WT1 F7 = BAV99RWT1 ORDERING INFORMATION Device Package Shipping BAV99WT1 SC-70 3000/Tape & Reel BAV99RWT1 SC-70 3000/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 April, 2001 - Rev. 1 180 Publication Order Number: BAV99WT1/D BAV99WT1, BAV99RWT1 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board, (Note 1.) TA = 25C Derate above 25C Symbol Max Unit PD 200 mW 1.6 mW/C Thermal Resistance Junction to Ambient RJA 625 C/W Total Device Dissipation Alumina Substrate, (Note 2.) TA = 25C Derate above 25C PD 300 mW 2.4 mW/C Thermal Resistance Junction to Ambient RJA 417 C/W TJ, Tstg -65 to +150 C Junction and Storage Temperature ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Each Diode) Characteristic Symbol Min Max Unit V(BR) 70 - Vdc Reverse Voltage Leakage Current (VR = 70 Vdc) (VR = 25 Vdc, TJ = 150C) (VR = 70 Vdc, TJ = 150C) IR - - - 2.5 30 50 Adc Diode Capacitance (VR = 0, f = 1.0 MHz) CD - 1.5 pF Forward Voltage VF - - - - 715 855 1000 1250 mVdc trr - 6.0 ns VFR - 1.75 V trr t OFF CHARACTERISTICS Reverse Breakdown Voltage (I(BR) = 100 A) (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc, iR(REC) = 1.0 mAdc) (Figure 1) RL = 100 Forward Recovery Voltage (IF = 10 mA, tr = 20 ns) 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 820 +10 V 2k 100 H 0.1 F IF t IF 10% 0.1 F DUT 50 OUTPUT PULSE GENERATOR tp tr 50 INPUT SAMPLING OSCILLOSCOPE 90% VR IR INPUT SIGNAL Notes: (a) A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: (b) Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: (c) tp trr Figure 1. Recovery Time Equivalent Test Circuit http://onsemi.com 181 iR(REC) = 1 mA OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) BAV99WT1, BAV99RWT1 CURVES APPLICABLE TO EACH DIODE 100 10 I R, REVERSE CURRENT (A) 10 TA = 85C TA = 25C 1.0 TA = -40C 0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) TA = 85C 0.1 TA = 55C 0.01 0.001 1.2 TA = 125C 1.0 TA = 25C 10 0 Figure 2. Forward Voltage 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Leakage Current 0.68 CD , DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) TA = 150C 0.64 0.60 0.56 0.52 0 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance http://onsemi.com 182 8 50 ON Semiconductor Monolithic Dual Switching Diode Common Anode BAW56LT1 ON Semiconductor Preferred Device MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Peak Forward Surge Current 3 1 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 TA = 25C Derate above 25C Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W PD 300 mW 2.4 mW/C RJA 417 C/W TJ, Tstg -55 to +150 C Board(1) Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature CASE 318-08, STYLE 12 SOT-23 (TO-236AB) CATHODE 1 ANODE 3 2 CATHODE DEVICE MARKING BAW56LT1 = A1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Max Unit V(BR) 70 -- Vdc -- -- -- 30 2.5 50 -- 2.0 -- -- -- -- 715 855 1000 1250 -- 6.0 OFF CHARACTERISTICS Reverse Breakdown Voltage (I(BR) = 100 Adc) Reverse Voltage Leakage Current (VR = 25 Vdc, TJ = 150C) (VR = 70 Vdc) (VR = 70 Vdc, TJ = 150C) IR Diode Capacitance (VR = 0, f = 1.0 MHz) CD Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) VF Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1) RL = 100 trr Adc pF mVdc ns 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 183 Publication Order Number: BAW56LT1/D BAW56LT1 820 +10 V 2.0 k 100 H IF tp tr 0.1 F IF t trr 10% t 0.1 F 90% D.U.T. 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE IR VR INPUT SIGNAL iR(REC) = 1.0 mA OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr Figure 1. Recovery Time Equivalent Test Circuit Curves Applicable to Each Cathode 10 IR , REVERSE CURRENT (A) TA = 85C 10 TA = -40C 1.0 0.1 TA = 25C 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) TA = 125C 1.0 TA = 85C 0.1 TA = 55C 0.01 0.001 1.2 TA = 150C TA = 25C 0 10 Figure 2. Forward Voltage 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Leakage Current 1.75 CD, DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 100 1.5 1.25 1.0 0.75 0 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance http://onsemi.com 184 8 50 BAW56TT1 Preferred Device Dual Switching Diode MAXIMUM RATINGS (TA = 25C) Rating http://onsemi.com Symbol Max Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit 225 mW 1.8 mW/C 555 C/W 360 mW 2.9 mW/C Peak Forward Surge Current CATHODE 1 3 ANODE 2 CATHODE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation, FR-4 Board (1) TA = 25C Derated above 25C PD Thermal Resistance, Junction to Ambient (1) RJA Total Device Dissipation, FR-4 Board (2) TA = 25C Derated above 25C PD Thermal Resistance, Junction to Ambient (2) RJA 345 C/W TJ, Tstg -55 to +150 C Junction and Storage Temperature Range 3 2 1 CASE 463 SOT-416/SC-75 STYLE 4 DEVICE MARKING A1 (1) FR-4 @ Minimum Pad (2) FR-4 @ 1.0 x 1.0 Inch Pad ORDERING INFORMATION Device Package Shipping BAW56TT1 SOT-416 3000 / Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 May, 2000 - Rev. 1 185 Publication Order Number: BAW56TT1/D BAW56TT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR) 70 -- Vdc -- -- -- 30 2.5 50 -- 2.0 -- -- -- -- 715 855 1000 1250 -- 6.0 OFF CHARACTERISTICS Reverse Breakdown Voltage (I(BR) = 100 Adc) Reverse Voltage Leakage Current (VR = 25 Vdc, TJ = 150C) (VR = 70 Vdc) (VR = 70 Vdc, TJ = 150C) IR Diode Capacitance (VR = 0, f = 1.0 MHz) CD Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 60 mAdc) (IF = 150 mAdc) VF Reverse Recovery Time (IF = IR = 10 mAdc, RL = 100 , IR(REC) = 1.0 mAdc) (Figure 1) trr Adc pF mVdc ns 820 +10 V 2.0 k 100 H tr 0.1 F IF tp t IF trr 10% t 0.1 F 50 OUTPUT PULSE GENERATOR DUT 90% 50 INPUT SAMPLING OSCILLOSCOPE VR IR INPUT SIGNAL iR(REC) = 1.0 mA OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr Figure 1. Recovery Time Equivalent Test Circuit http://onsemi.com 186 BAW56TT1 10 IR , REVERSE CURRENT (A) IF, FORWARD CURRENT (mA) 100 10 TA = 85C TA = 25C 1.0 TA = 150C TA = 125C 1.0 TA = 85C 0.1 TA = 55C 0.01 TA = -40C 0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) 0.001 1.2 TA = 25C 0 10 Figure 2. Forward Voltage 20 30 40 VR, REVERSE VOLTAGE (VOLTS) 50 Figure 3. Leakage Current CD, DIODE CAPACITANCE (pF) 1.75 1.5 1.25 1.0 0.75 2 0 4 6 8 VR, REVERSE VOLTAGE (VOLTS) r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE Figure 4. Capacitance 1.0 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 1.0 t, TIME (s) Figure 5. Normalized Thermal Response http://onsemi.com 187 10 100 1000 ON Semiconductor Dual Switching Diode BAW56WT1 ON Semiconductor Preferred Device MAXIMUM RATINGS (TA = 25C) Rating Symbol Max Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit PD 200 mW 1.6 mW/C RJA 0.625 C/W PD 300 mW 2.4 mW/C RJA 417 C/W TJ, Tstg -55 to +150 C Peak Forward Surge Current 3 1 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 TA = 25C Derate above 25C Board(1) Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature CASE 419-04, STYLE 4 SC-70/SOT-323 CATHODE 1 3 ANODE 2 DEVICE MARKING BAW56WT1 = A1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR) 70 -- Vdc -- -- -- 30 2.5 50 -- 2.0 -- -- -- -- 715 855 1000 1250 -- 6.0 OFF CHARACTERISTICS Reverse Breakdown Voltage (I(BR) = 100 Adc) Reverse Voltage Leakage Current (VR = 25 Vdc, TJ = 150C) (VR = 70 Vdc) (VR = 70 Vdc, TJ = 150C) IR Diode Capacitance (VR = 0, f = 1.0 MHz) CD Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 60 mAdc) (IF = 150 mAdc) VF Reverse Recovery Time (IF = IR = 10 mAdc, RL = 100 , IR(REC) = 1.0 mAdc) (Figure 1) trr Adc pF mVdc ns 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 188 Publication Order Number: BAW56WT1/D BAW56WT1 820 +10 V 2.0 k 100 H IF tp tr 0.1 F IF t trr 10% t 0.1 F 90% DUT 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE IR VR INPUT SIGNAL iR(REC) = 1.0 mA OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr Figure 1. Recovery Time Equivalent Test Circuit 10 IR , REVERSE CURRENT (A) 10 TA = 85C TA = 25C 1.0 TA = 150C TA = 125C 1.0 TA = 85C 0.1 TA = 55C 0.01 TA = -40C 0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) 0.001 1.2 TA = 25C 10 0 Figure 2. Forward Voltage 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Leakage Current 1.75 CD, DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 100 1.5 1.25 1.0 0.75 0 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance http://onsemi.com 189 8 50 ON Semiconductor BC182 BC182A BC182B Amplifier Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC182 Unit Collector-Emitter Voltage VCEO 50 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current -- Continuous IC 100 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 350 2.8 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.0 8.0 Watts mW/C TJ, Tstg -55 to +150 C Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 357 C/W Thermal Resistance, Junction to Case RJC 125 C/W Operating and Storage Junction Temperature Range 1 2 3 CASE 29-11, STYLE 17 TO-92 (TO-226AA) THERMAL CHARACTERISTICS Characteristic COLLECTOR 1 2 BASE 3 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Characteristic Min Typ Max 50 -- -- 60 -- -- 6.0 -- -- -- 0.2 15 -- -- 15 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) V(BR)CEO Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) V(BR)CBO Emitter-Base Breakdown Voltage (IE = 100 A, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 50 V, VBE = 0) ICBO Emitter-Base Leakage Current (VEB = 4.0 V, IC = 0) IEBO Semiconductor Components Industries, LLC, 2001 May, 2001 - Rev. 2 190 V V V nA nA Publication Order Number: BC182/D BC182 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max BC182 40 -- -- BC182 BC182A BC182B BC182 120 120 180 80 -- 500 220 500 -- -- -- 0.07 0.2 0.25 0.6 -- -- 1.2 -- 0.55 -- 0.5 0.62 0.83 -- 0.7 -- -- 100 -- 150 200 -- Unit ON CHARACTERISTICS DC Current Gain (IC = 10 A, VCE = 5.0 V) (IC = 2.0 mA, VCE = 5.0 V) (IC = 100 mA, VCE = 5.0 V) hFE Collector-Emitter On Voltage (IC = 10 mA, IB = 0.5 mA) (IC = 100 mA, IB = 5.0 mA)(1) VCE(sat) Base-Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)(1) VBE(sat) Base-Emitter On Voltage (IC = 100 A, VCE = 5.0 V) (IC = 2.0 mA, VCE = 5.0 V) (IC = 100 mA, VCE = 5.0 V)(1) VBE(on) -- -- V V V DYNAMIC CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 0.5 mA, VCE = 3.0 V, f = 100 MHz) fT (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) MHz Common Base Output Capacitance (VCB = 10 V, IC = 0, f = 1.0 MHz) Cob -- -- 5.0 pF Common Base Input Capacitance (VEB = 0.5 V, IC = 0, f = 1.0 MHz) Cib -- 8.0 -- pF 125 125 240 -- -- -- 500 260 500 -- 2.0 10 Small-Signal Current Gain (IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz) hfe BC182 BC182A BC182B Noise Figure (IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 k, f = 1.0 kHz) -- NF 1. Pulse Test: Tp 300 s, Duty Cycle 2.0%. http://onsemi.com 191 dB BC182 1.0 VCE = 10 V TA = 25C 1.5 0.9 0.8 1.0 V, VOLTAGE (VOLTS) hFE, NORMALIZED DC CURRENT GAIN 2.0 0.8 0.6 0.4 0.7 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V 0.6 0.5 0.4 0.3 0.2 0.3 VCE(sat) @ IC/IB = 10 0.1 0.2 0.2 0.5 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT (mAdc) 100 0 0.1 200 Figure 1. Normalized DC Current Gain 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) 50 70 100 Figure 5. "Saturation" and "On" Voltages 10 400 300 7.0 C, CAPACITANCE (pF) 200 VCE = 10 V TA = 25C 100 80 60 40 TA = 25C Cib 5.0 3.0 Cob 2.0 30 20 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 30 1.0 0.4 50 0.6 0.8 1.0 Figure 6. Current-Gain -- Bandwidth Product r b, BASE SPREADING RESISTANCE (OHMS) f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) TA = 25C 2.0 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitances 170 160 150 VCE = 10 V f = 1.0 kHz TA = 25C 140 130 120 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mAdc) 5.0 Figure 8. Base Spreading Resistance http://onsemi.com 192 10 20 40 BC212, BC212B, BC213 Amplifier Transistors PNP Silicon http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value VCEO BC212 BC213 Collector-Base Voltage Vdc VCBO Vdc 3 EMITTER -60 -45 VEBO -5.0 Vdc Collector Current - Continuous IC -100 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 350 2.8 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.0 8.0 Watts mW/C -55 to +150 C Operating and Storage Junction Temperature Range 2 BASE -50 -30 BC212 BC213 Emitter-Base Voltage Unit TJ, Tstg 1 2 MARKING DIAGRAMS THERMAL CHARACTERISTICS Characteristic 3 TO-92 CASE 29 STYLE 17 Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 357 C/W Thermal Resistance, Junction to Case RJC 125 C/W BC2 1xx YWW BC21xx xx Y WW = Specific Device Code = 2, 2B, or 3 = Year = Work Week ORDERING INFORMATION Device Semiconductor Components Industries, LLC, 2001 October, 2001 - Rev. 2 193 Package Shipping BC212 TO-92 5000 Units/Box BC212B TO-92 5000 Units/Box BC212BRL1 TO-92 2000/Tape & Reel BC212BZL1 TO-92 2000/Ammo Pack BC213 TO-92 5000 Units/Box Publication Order Number: BC212/D BC212, BC212B, BC213 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (IC = -2.0 mAdc, IB = 0) BC212 BC213 V(BR)CEO -50 -30 - - - - Vdc Collector-Base Breakdown Voltage (IC = -10 A, IE = 0) BC212 BC213 V(BR)CBO -60 -45 - - - - Vdc Emitter-Base Breakdown Voltage (IE = -10 Adc, IC = 0) BC212 BC213 V(BR)EBO -5 -5 - - - - Vdc Collector-Emitter Leakage Current (VCB = -30 V) BC212 BC213 ICBO - - - - -15 -15 nAdc Emitter-Base Leakage Current (VEB = -4.0 V, IC = 0) BC212 BC213 IEBO - - - - -15 -15 nAdc BC212 BC213 40 40 - - - - (IC = -2.0 mAdc, VCE = -5.0 Vdc) BC212 BC213 60 80 - - - - (IC = -100 mAdc, VCE = -5.0 Vdc) (Note 1.) BC212 BC213 - - 120 140 - - - - -0.10 -0.25 - -0.6 ON CHARACTERISTICS DC Current Gain (IC = -10 Adc, VCE = -5.0 Vdc) hFE - Collector-Emitter Saturation Voltage (IC = -10 mAdc, IB = -0.5 mAdc) (IC = -100 mAdc, IB = -5.0 mAdc) (Note 1.) VCE(sat) Vdc Base-Emitter Saturation Voltage (IC = -100 mAdc, IB = -5.0 mAdc) VBE(sat) - -1.0 -1.4 Vdc Base-Emitter On Voltage (IC = -2.0 mAdc, VCE = -5.0 Vdc) VBE(on) -0.6 -0.62 -0.72 Vdc - - 280 360 - - - - 6.0 DYNAMIC CHARACTERISTICS Current-Gain - Bandwidth Product (IC = -10 mAdc, VCE = -5.0 Vdc, f = 100 MHz) fT BC212 BC213 Common-Base Output Capacitance (VCB = -10 Vdc, IC = 0, f = 1.0 MHz) Cob Noise Figure (IC = -0.2 mAdc, VCE = -5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, f = 200 Hz) NF Small-Signal Current Gain (IC = -2.0 mAdc, VCE = -5.0 Vdc, f = 1.0 kHz) BC212, BC213 MHz dB - - 10 60 80 200 - - - - - 400 hfe BC212 BC213 BC212B 1. Pulse Test: Tp 300 s, Duty Cycle 2.0%. http://onsemi.com 194 pF - BC212, BC212B, BC213 -1.0 VCE = -10 V TA = 25C 1.5 -0.9 1.0 0.7 0.5 -0.7 VBE(on) @ VCE = -10 V -0.6 -0.5 -0.4 -0.3 VCE(sat) @ IC/IB = 10 -0.1 0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mAdc) Figure 1. Normalized DC Current Gain -0.5 -1.0 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mAdc) 10 400 300 Cib 7.0 200 VCE = -10 V TA = 25C 150 100 80 -50 -100 Figure 2. "Saturation" and "On" Voltages C, CAPACITANCE (pF) f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) VBE(sat) @ IC/IB = 10 -0.2 0.3 0.2 -0.2 60 40 5.0 TA = 25C 3.0 Cob 2.0 30 20 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 IC, COLLECTOR CURRENT (mAdc) 1.0 -0.4 -0.6 -50 Figure 3. Current-Gain - Bandwidth Product 0.3 r b, BASE SPREADING RESISTANCE (OHMS) 0.5 VCE = -10 V f = 1.0 kHz TA = 25C 0.1 0.05 0.03 0.01 -0.1 -0.2 -0.5 -1.0 -2.0 IC, COLLECTOR CURRENT (mAdc) -5.0 -1.0 -2.0 -4.0 -6.0 -10 VR, REVERSE VOLTAGE (VOLTS) -20 -30 -40 Figure 4. Capacitances 1.0 hob, OUTPUT ADMITTANCE (OHMS) TA = 25C -0.8 V, VOLTAGE (VOLTS) hFE, NORMALIZED DC CURRENT GAIN 2.0 -10 150 140 130 VCE = -10 V f = 1.0 kHz TA = 25C 120 110 100 -0.1 Figure 5. Output Admittance -0.2 -0.3 -0.5 -1.0 -2.0 -3.0 IC, COLLECTOR CURRENT (mAdc) -5.0 Figure 6. Base Spreading Resistance http://onsemi.com 195 -10 ON Semiconductor BC237,A,B,C BC238B,C BC239C Amplifier Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC237 BC238 BC239 Unit Collector-Emitter Voltage VCEO 45 25 25 Vdc Collector-Emitter Voltage VCES 50 30 30 Vdc Emitter-Base Voltage VEBO 6.0 5.0 5.0 Vdc Collector Current -- Continuous IC 100 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 350 2.8 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.0 8.0 Watts mW/C TJ, Tstg -55 to +150 C Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 357 C/W Thermal Resistance, Junction to Case RJC 125 C/W Operating and Storage Junction Temperature Range 1 2 3 CASE 29-11, STYLE 17 TO-92 (TO-226AA) THERMAL CHARACTERISTICS Characteristic COLLECTOR 1 2 BASE 3 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) BC237 BC238 BC239 V(BR)CEO 45 25 25 -- -- -- -- -- -- V Emitter-Base Breakdown Voltage (IE = 100 A, IC = 0) BC237 BC238 BC239 V(BR)EBO 6.0 5.0 5.0 -- -- -- -- -- -- V BC238 BC239 -- -- 0.2 0.2 15 15 nA (VCE = 50 V, VBE = 0) BC237 -- 0.2 15 (VCE = 30 V, VBE = 0) TA = 125C BC238 BC239 -- -- 0.2 0.2 4.0 4.0 (VCE = 50 V, VBE = 0) TA = 125C BC237 -- 0.2 4.0 Collector Cutoff Current (VCE = 30 V, VBE = 0) Semiconductor Components Industries, LLC, 2001 May, 2001 - Rev. 3 ICES 196 A Publication Order Number: BC237/D BC237,A,B,C BC238B,C BC239C ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max BC237A BC237B/238B BC237C/238C/239C -- -- -- 90 150 270 -- -- -- (IC = 2.0 mA, VCE = 5.0 V) BC237 BC237A BC237B/238B BC237C/238C/239C 120 120 200 380 -- 170 290 500 800 220 460 800 (IC = 100 mA, VCE = 5.0 V) BC237A BC237B/238B BC237C/238C/239C -- -- -- 120 180 300 -- -- -- -- -- 0.07 0.2 0.2 0.6 0.8 -- -- 0.6 -- 0.83 1.05 -- 0.55 -- 0.5 0.62 0.83 -- 0.7 -- BC237 BC238 BC239 -- -- -- 100 120 140 -- -- -- BC237 BC238 BC239 150 150 150 200 240 280 -- -- -- Unit ON CHARACTERISTICS DC Current Gain (IC = 10 A, VCE = 5.0 V) Collector-Emitter On Voltage (IC = 10 mA, IB = 0.5 mA) (IC = 100 mA, IB = 5.0 mA) hFE -- VCE(sat) BC237/BC238/BC239 BC237/BC239 BC238 Base-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) (IC = 100 mA, IB = 5.0 mA) VBE(sat) Base-Emitter On Voltage (IC = 100 A, VCE = 5.0 V) (IC = 2.0 mA, VCE = 5.0 V) (IC = 100 mA, VCE = 5.0 V) VBE(on) V V V DYNAMIC CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 0.5 mA, VCE = 3.0 V, f = 100 MHz) (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) fT MHz Collector-Base Capacitance (VCB = 10 V, IC = 0, f = 1.0 MHz) Cobo -- -- 4.5 pF Emitter-Base Capacitance (VEB = 0.5 V, IC = 0, f = 1.0 MHz) Cibo -- 8.0 -- pF Noise Figure (IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 k, f = 1.0 kHz) NF (IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 k, f = 1.0 kHz, f = 200 Hz) dB BC239 BC237 BC238 BC239 Figure 7. http://onsemi.com 197 -- 2.0 4.0 -- -- -- 2.0 2.0 2.0 10 10 4.0 BC237,A,B,C BC238B,C BC239C 1.0 VCE = 10 V TA = 25C 1.5 0.9 0.8 1.0 V, VOLTAGE (VOLTS) hFE, NORMALIZED DC CURRENT GAIN 2.0 0.8 0.6 0.4 0.7 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V 0.6 0.5 0.4 0.3 0.2 0.3 VCE(sat) @ IC/IB = 10 0.1 0.2 0.2 0.5 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT (mAdc) 100 0 0.1 200 Figure 1. Normalized DC Current Gain 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) 50 70 100 Figure 2. "Saturation" and "On" Voltages 10 400 300 7.0 C, CAPACITANCE (pF) 200 VCE = 10 V TA = 25C 100 80 60 40 TA = 25C Cib 5.0 3.0 Cob 2.0 30 20 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 30 1.0 0.4 50 Figure 3. Current-Gain -- Bandwidth Product r b, BASE SPREADING RESISTANCE (OHMS) f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) TA = 25C 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitances 170 160 150 VCE = 10 V f = 1.0 kHz TA = 25C 140 130 120 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mAdc) 5.0 Figure 5. Base Spreading Resistance http://onsemi.com 198 10 20 40 BC307B, BC307C Amplifier Transistors PNP Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO -45 Vdc Collector-Base Voltage VCBO -50 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current -- Continuous IC -100 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD Total Device Dissipation @ TC = 25C Derate above 25C PD 350 2.8 mW mW/C 1.0 8.0 Watts mW/C TJ, Tstg -55 to +150 C Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 357 C/W Thermal Resistance, Junction to Case RJC 125 C/W Operating and Storage Junction Temperature Range COLLECTOR 1 2 BASE 3 EMITTER THERMAL CHARACTERISTICS Characteristic 1 2 3 CASE 29 TO-92 STYLE 17 ORDERING INFORMATION Device Semiconductor Components Industries, LLC, 2001 June, 2000 - Rev. 2 199 Package Shipping BC307B TO-92 5000 Units/Box BC307BRL1 TO-92 2000/Tape & Reel BC307BZL1 TO-92 2000/Ammo Pack BC307C TO-92 5000 Units/Box Publication Order Number: BC307/D BC307B, BC307C ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max -45 -- -- -5.0 -- -- -- -- -0.2 -0.2 -15 -4.0 BC307B BC307C -- -- 150 270 -- -- (IC = -2.0 mAdc, VCE = -5.0 Vdc) BC307 BC307B BC307C 120 200 420 -- 290 500 800 460 800 (IC = -100 mAdc, VCE = -5.0 Vdc) BC307B BC307C -- -- 180 300 -- -- -- -- -- -0.10 -0.30 -0.25 -0.3 -0.6 -- -- -- -0.7 -1.0 -- -- -0.55 -0.62 -0.7 -- 280 -- -- -- 6.0 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = -2.0 mAdc, IB = 0) V(BR)CEO Emitter-Base Breakdown Voltage (IE = -100 Adc, IC = 0) V(BR)EBO Collector-Emitter Leakage Current (VCES = -50 V, VBE = 0) (VCES = -50 V, VBE = 0) TA = 125C Vdc Vdc ICES nAdc A ON CHARACTERISTICS DC Current Gain (IC = -10 Adc, VCE = -5.0 Vdc) hFE Collector-Emitter Saturation Voltage (IC = -10 mAdc, IB = -0.5 mAdc) (IC = -10 mAdc, IB = see Note 1) (IC = -100 mAdc, IB = -5.0 mAdc) VCE(sat) Base-Emitter Saturation Voltage (IC = -10 mAdc, IB = -0.5 mAdc) (IC = -100 mAdc, IB = -5.0 mAdc) VBE(sat) Base-Emitter On Voltage (IC = -2.0 mAdc, VCE = -5.0 Vdc) VBE(on) -- Vdc Vdc Vdc DYNAMIC CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = -10 mAdc, VCE = -5.0 Vdc, f = 100 MHz) fT Common Base Capacitance (VCB = -10 Vdc, IC = 0, f = 1.0 MHz) Ccbo Noise Figure (IC = -0.2 mAdc, VCE = -5.0 Vdc, RS = 2.0 k, f = 1.0 kHz) MHz NF dB -- 2.0 1. IC = -10 mAdc on the constant base current characteristic, which yields the point I C = -11 mAdc, VCE = -1.0 V. http://onsemi.com 200 pF 10 BC307B, BC307C TYPICAL CHARACTERISTICS -1.0 VCE = -10 V TA = 25C 1.5 -0.9 1.0 0.7 0.5 -0.7 VBE(on) @ VCE = -10 V -0.6 -0.5 -0.4 -0.3 VCE(sat) @ IC/IB = 10 -0.1 0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mAdc) Figure 1. Normalized DC Current Gain -0.5 -1.0 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mAdc) 10 400 300 Cib 7.0 200 VCE = -10 V TA = 25C 150 100 80 -50 -100 Figure 2. "Saturation" and "On" Voltages C, CAPACITANCE (pF) f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) VBE(sat) @ IC/IB = 10 -0.2 0.3 0.2 -0.2 60 40 5.0 TA = 25C 3.0 Cob 2.0 30 20 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 IC, COLLECTOR CURRENT (mAdc) 1.0 -0.4 -0.6 -50 Figure 3. Current-Gain -- Bandwidth Product 0.5 0.3 VCE = -10 V f = 1.0 kHz TA = 25C 0.1 0.05 0.03 0.01 -0.1 -0.2 -0.5 -1.0 -2.0 IC, COLLECTOR CURRENT (mAdc) -5.0 -1.0 -2.0 -4.0 -6.0 -10 VR, REVERSE VOLTAGE (VOLTS) -20 -30 -40 Figure 4. Capacitances r b, BASE SPREADING RESISTANCE (OHMS) 1.0 hob, OUTPUT ADMITTANCE (OHMS) TA = 25C -0.8 V, VOLTAGE (VOLTS) hFE, NORMALIZED DC CURRENT GAIN 2.0 -10 150 140 130 VCE = -10 V f = 1.0 kHz TA = 25C 120 110 100 -0.1 Figure 5. Output Admittance -0.2 -0.3 -0.5 -1.0 -2.0 -3.0 IC, COLLECTOR CURRENT (mAdc) -5.0 Figure 6. Base Spreading Resistance http://onsemi.com 201 -10 ON Semiconductor BC327, BC327-16, BC327-25, BC327-40 Amplifier Transistors PNP Silicon MAXIMUM RATINGS Rating Symbol BC327 Unit Collector-Emitter Voltage VCEO -45 Vdc Collector-Base Voltage VCBO -50 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current - Continuous IC -800 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watt mW/C TJ, Tstg -55 to +150 C Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W Operating and Storage Junction Temperature Range 1 2 3 CASE 29-11, STYLE 17 TO-92 (TO-226AA) THERMAL CHARACTERISTICS Characteristic COLLECTOR 1 2 BASE 3 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max -45 - - -50 - - -5.0 - - - - -100 - - -100 - - -100 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = -10 mA, IB = 0) V(BR)CEO Collector-Emitter Breakdown Voltage (IC = -100 A, IE = 0) V(BR)CES Emitter-Base Breakdown Voltage (IE = -10 A, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = -30 V, IE = 0) ICBO Collector Cutoff Current (VCE = -45 V, VBE = 0) ICES Emitter Cutoff Current (VEB = -4.0 V, IC = 0) IEBO Semiconductor Components Industries, LLC, 2001 May, 2001 - Rev. 2 202 Vdc Vdc Vdc nAdc nAdc nAdc Publication Order Number: BC327/D BC327, BC327-16, BC327-25, BC327-40 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max 100 100 160 250 40 - - - - - 630 250 400 630 - Unit ON CHARACTERISTICS DC Current Gain (IC = -100 mA, VCE = -1.0 V) hFE - BC327 BC327-16 BC327-25 BC327-40 (IC = -300 mA, VCE = -1.0 V) Base-Emitter On Voltage (IC = -300 mA, VCE = -1.0 V) VBE(on) - - -1.2 Vdc Collector-Emitter Saturation Voltage (IC = -500 mA, IB = -50 mA) VCE(sat) - - -0.7 Vdc Cob - 11 - pF fT - 260 - MHz SMALL-SIGNAL CHARACTERISTICS Output Capacitance (VCB = -10 V, IE = 0, f = 1.0 MHz) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Current-Gain - Bandwidth Product (IC = -10 mA, VCE = -5.0 V, f = 100 MHz) 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.05 0.07 0.02 0.05 0.03 P(pk) SINGLE PULSE 0.01 t1 t2 SINGLE PULSE DUTY CYCLE, D = t1/t2 0.02 0.01 0.001 JC(t) = (t) JC JC = 100C/W MAX JA(t) = r(t) JA JA = 375C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) JC(t) 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 t, TIME (SECONDS) 1.0 2.0 Figure 1. Thermal Response http://onsemi.com 203 5.0 10 20 50 100 BC327, BC327-16, BC327-25, BC327-40 -1000 IC, COLLECTOR CURRENT (mA) 1.0 s 1.0 ms 1000 TJ = 135C VCE = -1.0 V TA = 25C hFE, DC CURRENT GAIN 100 s dc TC = 25C dc TA = 25C -100 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT (APPLIES BELOW RATED VCEO) -10 -1.0 -3.0 -10 -30 VCE, COLLECTOR-EMITTER VOLTAGE 100 10 -0.1 -100 -1.0 -10 -100 IC, COLLECTOR CURRENT (mA) Figure 3. DC Current Gain -1.0 -1.0 TA = 25C TJ = 25C -0.8 -0.8 V, VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 2. Active Region - Safe Operating Area IC = -500 mA -0.6 -0.4 IC = -300 mA -0.2 0 -0.01 -0.1 -1.0 -10 IB, BASE CURRENT (mA) VBE(on) @ VCE = -1.0 V -0.6 -0.4 VCE(sat) @ IC/IB = 10 0 -1.0 -100 -1000 100 +1.0 VC for VCE(sat) -1.0 -1.0 -10 -100 IC, COLLECTOR CURRENT (mA) Figure 5. "On" Voltages C, CAPACITANCE (pF) V, TEMPERATURE COEFFICIENTS (mV/C) Figure 4. Saturation Region -2.0 VBE(sat) @ IC/IB = 10 -0.2 IC = -100 mA IC = -10 mA 0 -1000 VB for VBE -10 -100 IC, COLLECTOR CURRENT Cib 10 Cob 1.0 -0.1 -1000 Figure 6. Temperature Coefficients -1.0 -10 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitances http://onsemi.com 204 -100 ON Semiconductor BC337, BC337-16, BC337-25, BC337-40, BC338-25 Amplifier Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC337 BC338 Unit Collector-Emitter Voltage VCEO 45 25 Vdc Collector-Base Voltage VCBO 50 30 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector Current - Continuous IC 800 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watt mW/C TJ, Tstg -55 to +150 C Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W Operating and Storage Junction Temperature Range 1 2 3 CASE 29-04, STYLE 17 TO-92 (TO-226AA) THERMAL CHARACTERISTICS Characteristic COLLECTOR 1 2 BASE 3 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max 45 25 - - - - 50 30 - - - - 5.0 - - - - - - 100 100 - - - - 100 100 - - 100 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 10 mA, IB = 0) Collector-Emitter Breakdown Voltage (IC = 100 A, IE = 0) V(BR)CEO BC337 BC338 V(BR)CES BC337 BC338 Emitter-Base Breakdown Voltage (IE = 10 A, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 30 V, IE = 0) (VCB = 20 V, IE = 0) BC337 BC338 Collector Cutoff Current (VCE = 45 V, VBE = 0) (VCE = 25 V, VBE = 0) BC337 BC338 October, 2001 - Rev. 2 Vdc ICBO IEBO 205 Vdc nAdc ICES Emitter Cutoff Current (VEB = 4.0 V, IC = 0) Semiconductor Components Industries, LLC, 2001 Vdc nAdc nAdc Publication Order Number: BC337/D BC337, BC337-16, BC337-25, BC337-40, BC338-25 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max 100 100 160 250 60 - - - - - 630 250 400 630 - Unit ON CHARACTERISTICS DC Current Gain (IC = 100 mA, VCE = 1.0 V) hFE - BC337 BC337-16 BC337-25/BC338-25 BC337-40 (IC = 300 mA, VCE = 1.0 V) Base-Emitter On Voltage (IC = 300 mA, VCE = 1.0 V) VBE(on) - - 1.2 Vdc Collector-Emitter Saturation Voltage (IC = 500 mA, IB = 50 mA) VCE(sat) - - 0.7 Vdc Cob - 15 - pF fT - 210 - MHz SMALL-SIGNAL CHARACTERISTICS Output Capacitance (VCB = 10 V, IE = 0, f = 1.0 MHz) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Current-Gain - Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.05 0.07 0.02 0.05 0.03 P(pk) SINGLE PULSE 0.01 t1 t2 SINGLE PULSE DUTY CYCLE, D = t1/t2 0.02 0.01 0.001 JC(t) = (t) JC JC = 100C/W MAX JA(t) = r(t) JA JA = 375C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) JC(t) 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 t, TIME (SECONDS) 1.0 Figure 1. Thermal Response http://onsemi.com 206 2.0 5.0 10 20 50 100 BC337, BC337-16, BC337-25, BC337-40, BC338-25 1.0 s 1.0 ms 100 s dc TC = 25C dc TA = 25C 100 10 1.0 1000 TJ = 135C hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (mA) 1000 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT (APPLIES BELOW RATED VCEO) 3.0 10 30 VCE, COLLECTOR-EMITTER VOLTAGE VCE = 1 V TJ = 25C 100 10 0.1 100 1.0 10 100 IC, COLLECTOR CURRENT (AMP) Figure 3. DC Current Gain 1.0 1.0 TJ = 25C TA = 25C 0.8 0.8 V, VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 2. Active Region - Safe Operating Area 0.6 IC = 10 mA 0.4 100 mA 300 mA 500 mA VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 1 V 0.6 0.4 0.2 0.2 VCE(sat) @ IC/IB = 10 0 0.01 0.1 1 IB, BASE CURRENT (mA) 10 0 100 1 Figure 4. Saturation Region 10 100 IC, COLLECTOR CURRENT (mA) 1000 Figure 5. "On" Voltages 100 +1 VC for VCE(sat) 0 C, CAPACITANCE (pF) V, TEMPERATURE COEFFICIENTS (mV/C) 1000 -1 VB for VBE -2 1 10 100 IC, COLLECTOR CURRENT (mA) Cib 10 Cob 1 0.1 1000 Figure 6. Temperature Coefficients 1 10 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitances http://onsemi.com 207 100 ON Semiconductor BC368 NPN, BC369 PNP Amplifier Transistors COLLECTOR 2 COLLECTOR 2 3 BASE 3 BASE NPN PNP Voltage and current are negative for PNP transistors 1 EMITTER 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 20 Vdc Collector-Emitter Voltage VCES 25 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector Current -- Continuous IC 1.0 Adc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watt mW/C TJ, Tstg -55 to +150 C Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W Operating and Storage Junction Temperature Range 1 2 3 CASE 29-04, STYLE 14 TO-92 (TO-226AA) THERMAL CHARACTERISTICS Characteristic Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 2 208 Publication Order Number: BC368/D BC368 NPN, BC369 PNP ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (IC = 10 mA, IB = 0) V(BR)CEO 20 -- -- Vdc Collector-Base Breakdown Voltage (IC = 100 A, IE = 0 ) V(BR)CBO 25 -- -- Vdc Emitter-Base Breakdown Voltage (IE = 100 A, IC = 0) V(BR)EBO 5.0 -- -- Vdc Collector Cutoff Current (VCB = 25 V, IE = 0) (VCB = 25 V, IE = 0, TJ = 150C) ICBO -- -- -- -- 10 1.0 Adc mAdc Emitter Cutoff Current (VEB = 5.0 V, IC = 0) IEBO -- -- 10 Adc 50 85 170 60 -- -- -- -- -- 375 375 -- fT 65 -- -- MHz Collector-Emitter Saturation Voltage (IC = 1.0 A, IB = 100 mA) VCE(sat) -- -- 0.5 V Base-Emitter On Voltage (IC = 1.0 A, VCE = 1.0 V) VBE(on) -- -- 1.0 V OFF CHARACTERISTICS ON CHARACTERISTICS DC Current Gain (VCE = 10 V, IC = 5.0 mA) (VCE = 1.0 V, IC = 0.5 A) hFE BC368, 369 BC368-25 (VCE = 1.0 V, IC = 1.0 A) Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 20 MHz) Figure 8. http://onsemi.com 209 -- BC368 NPN, BC369 PNP 1.0 VCE , COLLECTOR VOLTAGE (VOLTS) hFE , CURRENT GAIN 200 100 70 50 20 VCE = 1.0 V TJ = 25C 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) 500 1000 TJ = 25C 0.8 0.6 1000 mA 0.2 500 mA IC = 10 mA 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 IB, BASE CURRENT (mA) 250 mA 20 50 100 Figure 2. Collector Saturation Region -0.8 TJ = 25C VBE(sat) @ IC/IB = 10 VB , TEMPERATURE COEFFICIENT (mV/C) 1.0 0.8 V, VOLTAGE (VOLTS) 100 mA 0.4 Figure 1. DC Current Gain VBE(on) @ VCE = 1.0 V 0.6 0.4 0.2 VCE(sat) @ IC/IB = 10 0 1.0 2.0 5.0 10 20 50 100 200 500 1000 IC, COLLECTOR CURRENT (mA) -1.2 -1.6 -2.0 VB for VBE -2.4 -2.8 1.0 2.0 5.0 10 20 50 100 200 500 1000 IC, COLLECTOR CURRENT (mA) Figure 4. Temperature Coefficient Figure 3. "On" Voltages 300 160 TJ = 25C 200 C, CAPACITANCE (pF) f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) 50 mA 100 70 VCE = 10 V TJ = 25C f = 20 MHz 50 30 10 20 50 120 80 Cibo 40 Cobo 100 200 500 0 Cobo Cibo 1000 IC, COLLECTOR CURRENT (mA) Figure 5. Current-Gain -- Bandwidth Product 5.0 1.0 10 15 20 2.0 3.0 4.0 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Capacitance http://onsemi.com 210 25 5.0 ON Semiconductor BC372 BC373 High Voltage Darlington Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC372 BC373 Unit Collector-Emitter Voltage VCES 100 80 Vdc Collector-Base Voltage VCBO 100 80 Vdc Emitter-Base Voltage VEBO 12 Vdc Collector Current -- Continuous IC 1.0 Adc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watt mW/C TJ, Tstg -55 to +150 C Symbol Max Unit Operating and Storage Junction Temperature Range 1 2 CASE 29-11, STYLE 1 TO-92 (TO-226AA) COLLECTOR 3 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W 3 BASE 2 EMITTER 1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max 100 80 -- -- -- -- 100 80 -- -- -- -- 12 -- -- -- -- -- -- 100 100 -- -- 100 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(1) (IC = 100 Adc, IB = 0) Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0) V(BR)CES BC372 BC373 V(BR)CBO BC372 BC373 Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) Collector Cutoff Current (VCB = 80 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) Vdc V(BR)EBO Vdc ICBO BC372 BC373 Emitter Cutoff Current (VEB = 10 V, IC = 0) IEBO Vdc nAdc nAdc 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. Semiconductor Components Industries, LLC, 2001 May, 2001 - Rev. 2 211 Publication Order Number: BC272/D BC372 BC373 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Characteristic ON Min Typ Max 8.0 10 -- -- -- 160 Unit CHARACTERISTICS(1) DC Current Gain (IC = 250 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) hFE K Collector-Emitter Saturation Voltage (IC = 250 mAdc, IB = 0.25 mAdc) VCE(sat) -- 1.0 1.1 Vdc Base-Emitter Saturation Voltage (IC = 250 mAdc, IB = 0.25 mAdc) VBE(sat) -- 1.4 2.0 Vdc fT 100 200 -- MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cob -- 10 25 pF Noise Figure (IC = 1.0 mAdc, VCE = 5.0 Vdc, Rg = 100 k ohm, f = 1.0 kHz) NF -- 2.0 -- dB DYNAMIC CHARACTERISTICS Current-Gain Bandwidth Product (IC = 100 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. Figure 7. 100 K 1.6 VCE = 5 V 1.2 25C VOLTAGE (V) hFE, DC CURRENT GAIN TA = 125C -55C 10 K VBE(sat) @ IC/IB = 100 1.4 VBE(on) @ VCE = 5 V 1 0.8 VCE(sat) @ IC/IB = 100 0.6 0.4 0.2 1K 1 10 100 IC, COLLECTOR CURRENT (mA) 0 1000 5 1000 500 100 VCE = 5 V TJ = 25C 100 10 0.6 1 100 IC, COLLECTOR CURRENT (mA) Figure 2. "Saturation" and "On" Voltages C, CAPACITANCE (pF) f, T CURRENT-GAIN BANDWIDTH PRODUCT (MHz) Figure 1. DC Current Gain 10 10 100 IC, COLLECTOR CURRENT (mA) 600 Cib 10 1 0.1 Cob 10 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitances Figure 3. Current-Gain -- Bandwidth Product http://onsemi.com 212 100 BC447, BC449, BC449A High Voltage Transistors PNP Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Collector-Emitter Voltage BC447 BC449, BC449A VCEO Collector-Base Voltage BC447 BC449, BC449A VCBO Emitter-Base Voltage VEBO 5.0 Vdc Collector Current - Continuous IC 300 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watts mW/C -55 to +150 C Operating and Storage Junction Temperature Range COLLECTOR 1 Unit Vdc 80 100 2 BASE Vdc 80 100 TJ, Tstg Moisture Sensitivity Level (MSL) Electrostatic Discharge (ESD) 3 EMITTER 1 2 3 CASE 29 TO-92 STYLE 17 MSL: 1 NA THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W MARKING DIAGRAM BC 44xx YWW BC44xx xx Y WW = Specific Device Code = 7, 9 or 9A = Year = Work Week ORDERING INFORMATION Device Semiconductor Components Industries, LLC, 2001 May, 2001 - Rev. 0 213 Package Shipping BC447 TO-92 5000 Units/Box BC449 TO-92 5000 Units/Box BC449A TO-92 5000 Units/Box Publication Order Number: BC447/D BC447, BC449, BC449A ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max 80 100 - - - - 80 100 - - - - 5.0 - - - - - - 100 100 50 120 50 100 50 60 - - - - - - 460 220 - - - - - 0.125 0.25 - 0.85 - 0.55 - - 0.76 0.7 1.2 100 200 - Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Note 1.) (IC = 1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0) V(BR)CEO BC447 BC449, BC449A V(BR)CBO BC447 BC449, BC449A Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) Vdc Vdc V(BR)EBO Vdc ICBO BC447 BC449, BC449A nAdc ON CHARACTERISTICS (Note 1.) DC Current Gain (IC = 2.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) hFE BC447, BC449 BC449A BC447, BC449 BC449A BC447, BC449 BC449A Collector-Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) VCE(sat) Base-Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) VBE(sat) Base-Emitter On Voltage (IC = 2.0 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) (Note 1.) VBE(on) - Vdc Vdc Vdc DYNAMIC CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 50 mAdc, VCE = 5.0 Vdc, f = 100 MHz) fT 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2% http://onsemi.com 214 MHz 300 40 200 -5.0 V Cibo C, CAPACITANCE (pF) 100 70 10 8.0 6.0 50 30 -1.0 -5.0 -7.0 -10 -2.0 -3.0 2.0 -0.1 -0.2 -50 -70 -100 -20 -30 -0.5 -1.0 -2.0 -5.0 VR, REVERSE VOLTAGE (VOLTS) Figure 1. Current-Gain -- Bandwidth Product Figure 2. Capacitance -1.0 k -700 -500 VCC = -40 V IC/IB = 10 IB1 = IB2 TJ = 25C ts -300 200 -200 tf 100 70 50 -100 -70 -50 tr 30 20 td @ VBE(off) = -0.5 V -10 -20 -30 -50 -70 -100 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT MPS8598 DUTY CYCLE 10% MPS8599 -30 -20 -10 -200 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. Switching Times Figure 4. Active-Region Safe Operating Area 300 1.0 TJ = 125C 200 TJ = 25C 0.8 V, VOLTAGE (VOLTS) 25C 100 70 -50 -100 -10 -20 IC, COLLECTOR CURRENT (mA) 300 h FE, DC CURRENT GAIN Cobo 4.0 1.0 k 700 500 t, TIME (ns) 20 VCE = -1.0 V 10 25C TTJJ==25C TJ = 25C I C , COLLECTOR CURRENT (mA) f T , CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) BC447, BC449, BC449A -55C VCE = -5.0 V 50 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 5.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 30 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 0 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. DC Current Gain Figure 6. "ON" Voltages http://onsemi.com 215 50 100 200 IC = 10 mA 1.6 IC = 50 mA IC = 20 mA IC = 100 mA R VB , TEMPERATURE COEFFICIENT (mV/ C) 2.0 IC = 200 mA 1.2 0.8 0.4 TJ = 25C 0 0.02 0.05 r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) BC447, BC449, BC449A 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.1 0.2 1.0 0.5 2.0 10 5.0 20 -1.4 -1.8 RVB FOR VBE -55C TO 125C -2.2 -2.6 -3.0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. Collector Saturation Region Figure 8. Base-Emitter Temperature Coefficient 200 D = 0.5 0.2 0.1 0.05 0.02 SINGLE PULSE ZJC(t) = r(t) * RJC TJ(pk) - TC = P(pk) ZJC(t) ZJA(t) = r(t) * RJA TJ(pk) - TA = P(pk) ZJA(t) D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN469) P(pk) 0.01 t1 SINGLE PULSE 0.03 t2 0.02 0.01 -1.0 DUTY CYCLE, D = t1/t2 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k t, TIME (ms) Figure 9. Thermal Response http://onsemi.com 216 2.0 k 5.0 k 10 k 20 k 50 k 100 k BC487, BC487B High Current Transistors NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 60 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector Current - Continuous IC 0.5 Adc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watt mW/C Operating and Storage Junction Temperature Range TJ, Tstg -55 to +150 C COLLECTOR 1 2 BASE 3 EMITTER 1 2 THERMAL CHARACTERISTICS Characteristic TO-92 CASE 29 STYLE 17 3 Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 MARKING DIAGRAMS BC 487 YWW C/W Y WW BC 487B YWW = Year = Work Week ORDERING INFORMATION Device Semiconductor Components Industries, LLC, 2001 September, 2001 - Rev. 0 217 Package Shipping BC487 TO-92 1000 Units/Box BC487B TO-92 1000 Units/Box BC487BRL1 TO-92 2000/Tape & Reel Publication Order Number: BC487/D BC487, BC487B ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (Note 1.) (IC = 10 mAdc, IB = 0) V(BR)CEO 60 - - Vdc Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0) V(BR)CBO 60 - - Vdc Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO 5.0 - - Vdc ICBO - - 100 nAdc 40 60 160 15 - - 260 - - 400 400 - - - 0.2 0.3 0.5 - - - 0.85 0.9 1.2 - fT - 200 - MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cob - 7.0 - pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cib - 50 - pF OFF CHARACTERISTICS Collector Cutoff Current (VCB = 40 Vdc, IE = 0) ON CHARACTERISTICS* DC Current Gain (IC = 10 mAdc, VCE = 2.0 Vdc) (IC = 100 mAdc, VCE = 2.0 Vdc) hFE - BC487 BC487B (IC = 1.0 Adc, VCE = 5.0 Vdc)* Collector-Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 1.0 Adc, IB = 100 mAdc) VCE(sat) Base-Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 1.0 Adc, IB = 100 mAdc)(1) VBE(sat) Vdc Vdc DYNAMIC CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. TURN-ON TIME 100 +10 V 0 tr = 3.0 ns RB Vin 5.0 F +VBB VCC +40 V -1.0 V 5.0 s TURN-OFF TIME 100 RL VCC +40 V 100 OUTPUT RB Vin 5.0 F *CS < 6.0 pF 5.0 s tr = 3.0 ns *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities Figure 1. Switching Time Test Circuits http://onsemi.com 218 100 RL OUTPUT *CS < 6.0 pF 300 200 80 VCE = 2.0 V TJ = 25C TJ = 25C 60 C, CAPACITANCE (pF) f, T CURRENT-GAIN BANDWIDTH PRODUCT (MHz) BC487, BC487B 100 70 50 40 Cibo 20 10 8.0 6.0 30 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 4.0 0.1 200 Cobo 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Current-Gain - Bandwidth Product 50 100 Figure 3. Capacitance 1.0 k 700 500 ts 300 t, TIME (ns) 200 100 70 50 30 20 tf VCC = 40 V IC/IB = 10 IB1 = IB2 TJ = 25C 10 5.0 7.0 10 tr td @ VBE(off) = 0.5 V 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 4. Switching Time 1.0 0.7 0.5 D = 0.5 0.2 0.1 0.3 0.2 0.1 0.07 0.05 P(pk) 0.01 t1 0.02 SINGLE PULSE 0.03 SINGLE PULSE ZJC(t) = r(t) * RJC ZJA(t) = r(t) * RJA 0.02 0.01 1.0 2.0 5.0 10 20 50 100 200 500 t, TIME (ms) 1.0k Figure 5. Thermal Response http://onsemi.com 219 2.0k t2 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN-469) TJ(pk) - TC = P(pk) ZJC(t) TJ(pk) - TA = P(pk) ZJA(t) 5.0k 10k 20k 50k 100k IC, COLLECTOR CURRENT (mA) BC487, BC487B 1.0 k 700 500 100 s 1.0 ms 1.0 s 300 200 TC = 25C TA = 25C 100 70 50 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 30 20 10 1.0 BC489 20 30 50 2.0 3.0 5.0 7.0 10 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 70 100 Figure 6. Active Region - Safe Operating Area 400 hFE , DC CURRENT GAIN TJ =125C VCE = 1.0 V 200 25C -55C 100 80 60 40 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 200 300 500 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. DC Current Gain 1.0 TJ = 25C V, VOLTAGE (VOLTS) 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 0 0.5 VCE(sat) @ IC/IB = 10 1.0 2.0 5.0 10 50 100 20 IC, COLLECTOR CURRENT (mA) 200 500 1.0 TJ = 25C 0.8 0.6 IC = 10 mA 50 mA 100 mA 250 mA 500 mA 0.4 0.2 0 0.05 Figure 8. "On" Voltages 0.1 0.2 0.5 2.0 5.0 1.0 10 IC, COLLECTOR CURRENT (mA) 20 Figure 9. Collector Saturation Region http://onsemi.com 220 50 BC487, BC487B -1.0 -1.2 -0.8 RVB, TEMPERATURE COEFFICIENT (mV/C) -0.8 V, VOLTAGE (VOLTS) TJ = 25C -1.6 RVB for VBE -2.0 VBE(sat) @ IC/IB = 10 -0.6 VBE(on) @ VCE = -1.0 V -0.4 -0.2 -2.4 VCE(sat) @ IC/IB = 10 -2.8 0.5 1.0 2.0 5.0 20 50 10 100 IC, COLLECTOR CURRENT (mA) 200 0 -0.5 500 -1.0 -2.0 -1.0 -0.8 TJ = 25C -1.2 -0.8 -1.6 -0.6 -0.4 -500 Figure 11. "On" Voltages RVB, TEMPERATURE COEFFICIENT (mV/C) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 10. Base-Emitter Temperature Coefficient -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) IC = -10 mA -50 mA -100 mA RVB for VBE -2.0 -250 mA -500 mA -2.4 -0.2 0 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 IB, BASE CURRENT (mA) -10 -20 -2.8 -0.5 -50 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) -500 Figure 13. Base-Emitter Temperature Coefficient Figure 12. Collector Saturation Region http://onsemi.com 221 BC488B High Current Transistors PNP Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO -60 Vdc Collector-Base Voltage VCBO -60 Vdc Emitter-Base Voltage VEBO -4.0 Vdc Collector Current - Continuous IC -1.0 Adc Total Device Dissipation @ TA = 25C Derate above 25C PD Total Device Dissipation @ TC = 25C Derate above 25C PD Operating and Storage Junction Temperature Range TJ, Tstg 625 5.0 mW mW/C 1.5 12 Watts mW/C -55 to +150 C COLLECTOR 1 2 BASE 3 EMITTER TO-92 CASE 29 STYLE 17 1 2 3 MARKING DIAGRAMS THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W BC 488B YWW Y WW = Year = Work Week ORDERING INFORMATION Device BC488BRL1 Semiconductor Components Industries, LLC, 2001 September, 2001 - Rev. 0 222 Package Shipping TO-92 2000/Tape & Reel Publication Order Number: BC488B/D BC488B ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage(1) (IC = -10 mAdc, IB = 0) V(BR)CEO -60 - - Vdc Collector-Base Breakdown Voltage (IC = -100 Adc, IE = 0) V(BR)CBO -60 - - Vdc Emitter-Base Breakdown Voltage (IE = -10 Adc, IC = 0) V(BR)EBO -4.0 - - Vdc ICBO - - -100 nAdc 40 160 15 - 260 - - 400 - - - -0.25 -0.5 -0.5 - - - -0.9 -1.0 -1.2 - fT - 150 - MHz Output Capacitance (VCB = -10 Vdc, IE = 0, f = 1.0 MHz) Cob - 9.0 - pF Input Capacitance (VEB = -0.5 Vdc, IC = 0, f = 1.0 MHz) Cib - 110 - pF OFF CHARACTERISTICS Collector Cutoff Current (VCB = -40 Vdc, IE = 0) ON CHARACTERISTICS* DC Current Gain (IC = -10 mAdc, VCE = -2.0 Vdc) (IC = -100 mAdc, VCE = -2.0 Vdc) (IC = -1.0 Adc, VCE = -5.0 Vdc) hFE Collector-Emitter Saturation Voltage (IC = -500 mAdc, IB = -50 mAdc) (IC = -1.0 Adc, IB = -100 mAdc) VCE(sat) Base-Emitter Saturation Voltage (IC = -500 mAdc, IB = -50 mAdc) (IC = -1.0 Adc, IB = -100 mAdc) VBE(sat) - Vdc Vdc DYNAMIC CHARACTERISTICS Current-Gain - Bandwidth Product (IC = -50 mAdc, VCE = -2.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2%. TURN-ON TIME 100 +10 V 0 tr = 3.0 ns RB Vin 5.0 F +VBB VCC +40 V -1.0 V 5.0 s TURN-OFF TIME 100 VCC +40 V 100 RL OUTPUT RB Vin 5.0 F *CS < 6.0 pF 5.0 s tr = 3.0 ns *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities Figure 1. Switching Time Test Circuits http://onsemi.com 223 100 RL OUTPUT *CS < 6.0 pF 200 100 VCE = -2.0 V TJ = 25C 70 100 70 50 30 TJ = 25C Cibo 50 C, CAPACITANCE (pF) f, T CURRENT-GAIN BANDWIDTH PRODUCT (MHz) BC488B 30 20 10 Cobo 7.0 20 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 IC, COLLECTOR CURRENT (mA) 5.0 -0.1 -200 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Current-Gain - Bandwidth Product -50 -100 Figure 3. Capacitance 1.0 k 700 500 ts 300 t, TIME (ns) 200 100 70 50 td @ VBE(off) = -0.5 V tf VCC = -40 V IC/IB = 10 IB1 = IB2 TJ = 25C 30 20 tr 10 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 IC, COLLECTOR CURRENT (mA) -500 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 4. Switching Time 1.0 0.7 0.5 D = 0.5 0.2 0.1 0.3 0.2 0.1 0.07 0.05 P(pk) 0.01 t1 0.02 SINGLE PULSE 0.03 SINGLE PULSE ZJC(t) = r(t) * RJC ZJA(t) = r(t) * RJA 0.02 0.01 1.0 2.0 5.0 10 t2 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN-469) TJ(pk) - TC = P(pk) ZJC(t) TJ(pk) - TA = P(pk) ZJA(t) 20 50 100 200 t, TIME (ms) 500 1.0k Figure 5. Thermal Response http://onsemi.com 224 2.0k 5.0k 10k 20k 50k 100 BC488B -1.0 k -700 1.0 100 s TJ = 25C 0.8 -300 1.0 s -200 -100 -70 -50 1.0 ms TC = 25C TA = 25C CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT -30 -20 VBE(sat) @ IC/IB = 10 V, VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) -500 0.6 0.4 0.2 VCE(sat) @ IC/IB = 10 BC490 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) -10 -1.0 VBE(on) @ VCE = 1.0 V 0 0.5 1.0 2.0 1.0 500 200 500 -0.8 TJ = 25C 0.8 RVB, TEMPERATURE COEFFICIENT (mV/C) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 200 Figure 7. "On" Voltages Figure 6. Active Region, Safe Operating Area 0.6 5.0 10 50 100 20 IC, COLLECTOR CURRENT (mA) -1.2 50 mA IC = 10 mA 100 mA 250 mA 500 mA -1.6 0.4 -2.0 -2.4 0.2 0 0.05 RVB for VBE 0.1 0.2 1.0 2.0 10 0.5 5.0 IC, COLLECTOR CURRENT (mA) 20 -2.8 0.5 50 1.0 2.0 10 100 5.0 20 50 IC, COLLECTOR CURRENT (mA) Figure 9. Base-Emitter Temperature Coefficient Figure 8. Collector Saturation Region 400 hFE , DC CURRENT GAIN TJ = 125C 200 VCE = -1.0 V 25C -55C 100 80 60 40 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) Figure 10. DC Current Gain http://onsemi.com 225 -50 -70 -100 -200 -300 -500 BC488B VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) -1.0 TJ = 25C VBE(sat) @ IC/IB = 10 -0.6 VBE(on) @ VCE = -1.0 V -0.4 -0.2 0 -0.5 -1.0 VCE(sat) @ IC/IB = 10 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) -500 TJ = 25C -0.8 -0.6 IC = -10 mA -50 mA 0 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 IB, BASE CURRENT (mA) -1.6 RVB for VBE -2.4 -1.0 -2.0 -500 mA -10 -20 Figure 12. Collector Saturation Region -1.2 -2.8 -0.5 -250 mA -0.2 -0.8 -2.0 -100 mA -0.4 Figure 11. "On" Voltages RVB, TEMPERATURE COEFFICIENT (mV/C) V, VOLTAGE (VOLTS) -0.8 -1.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) -500 Figure 13. Base-Emitter Temperature Coefficient http://onsemi.com 226 -50 ON Semiconductor High Current Transistors BC489, A, B NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 80 Vdc Collector-Base Voltage VCBO 80 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector Current -- Continuous IC 0.5 Adc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watt mW/C TJ, Tstg -55 to +150 C Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W Operating and Storage Junction Temperature Range 1 2 CASE 29-04, STYLE 17 TO-92 (TO-226AA) THERMAL CHARACTERISTICS Characteristic 3 COLLECTOR 1 2 BASE 3 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) V(BR)CEO 80 -- -- Vdc Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0) V(BR)CBO 80 -- -- Vdc Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO 5.0 -- -- Vdc ICBO -- -- 100 nAdc 40 60 100 160 15 -- -- 160 260 -- -- 400 250 400 -- OFF CHARACTERISTICS Collector Cutoff Current (VCB = 60 Vdc, IE = 0) ON CHARACTERISTICS* DC Current Gain (IC = 10 mAdc, VCE = 2.0 Vdc) (IC = 100 mAdc, VCE = 2.0 Vdc) hFE BC489 BC489A BC489B (IC = 1.0 Adc, VCE = 5.0 Vdc)* -- 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2%. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 227 Publication Order Number: BC489/D BC489, A, B ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Min Typ Max -- -- 0.2 0.3 0.5 -- -- -- 0.85 0.9 1.2 -- fT -- 200 -- MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cob -- 7.0 -- pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cib -- 50 -- pF Characteristic Unit ON CHARACTERISTICS* (Continued) Collector-Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 1.0 Adc, IB = 100 mAdc) VCE(sat) Base-Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 1.0 Adc, IB = 100 mAdc)(1) VBE(sat) Vdc Vdc DYNAMIC CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. TURN-ON TIME 100 +10 V 0 tr = 3.0 ns RB Vin 5.0 F +VBB VCC +40 V -1.0 V 5.0 s TURN-OFF TIME 100 VCC +40 V 100 RL OUTPUT RB Vin 5.0 F *CS < 6.0 pF 5.0 s tr = 3.0 ns *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities Figure 1. Switching Time Test Circuits http://onsemi.com 228 100 RL OUTPUT *CS < 6.0 pF 300 80 VCE = 2.0 V TJ = 25C 200 TJ = 25C 60 C, CAPACITANCE (pF) f, T CURRENT-GAIN BANDWIDTH PRODUCT (MHz) BC489, A, B 100 70 50 40 Cibo 20 10 8.0 6.0 30 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 4.0 0.1 200 Cobo 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Current-Gain -- Bandwidth Product 50 100 Figure 3. Capacitance 1.0 k 700 500 ts 300 t, TIME (ns) 200 100 70 50 30 20 tf VCC = 40 V IC/IB = 10 IB1 = IB2 TJ = 25C 10 5.0 7.0 10 tr td @ VBE(off) = 0.5 V 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 4. Switching Time 1.0 0.7 0.5 D = 0.5 0.2 0.1 0.3 0.2 0.1 0.07 0.05 P(pk) 0.01 t1 0.02 SINGLE PULSE 0.03 SINGLE PULSE ZJC(t) = r(t) * RJC ZJA(t) = r(t) * RJA 0.02 0.01 1.0 2.0 5.0 10 20 50 100 200 500 t, TIME (ms) 1.0k Figure 5. Thermal Response http://onsemi.com 229 2.0k t2 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN-469) TJ(pk) - TC = P(pk) ZJC(t) TJ(pk) - TA = P(pk) ZJA(t) 5.0k 10k 20k 50k 100k IC, COLLECTOR CURRENT (mA) BC489, A, B 1.0 k 700 500 100 s 1.0 ms 1.0 s 300 200 TC = 25C TA = 25C 100 70 50 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 30 20 10 1.0 BC489 20 30 50 2.0 3.0 5.0 7.0 10 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 70 100 Figure 6. Active Region -- Safe Operating Area 400 hFE , DC CURRENT GAIN TJ =125C VCE = 1.0 V 200 25C -55C 100 80 60 40 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 200 300 500 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. DC Current Gain 1.0 TJ = 25C V, VOLTAGE (VOLTS) 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 0 0.5 VCE(sat) @ IC/IB = 10 1.0 2.0 5.0 10 50 100 20 IC, COLLECTOR CURRENT (mA) 200 500 1.0 TJ = 25C 0.8 0.6 IC = 10 mA 50 mA 100 mA 250 mA 500 mA 0.4 0.2 0 0.05 Figure 8. "On" Voltages 0.1 0.2 0.5 2.0 5.0 1.0 10 IC, COLLECTOR CURRENT (mA) 20 Figure 9. Collector Saturation Region http://onsemi.com 230 50 BC489, A, B -1.0 -1.2 -0.8 RVB, TEMPERATURE COEFFICIENT (mV/C) -0.8 V, VOLTAGE (VOLTS) TJ = 25C -1.6 RVB for VBE -2.0 VBE(sat) @ IC/IB = 10 -0.6 VBE(on) @ VCE = -1.0 V -0.4 -0.2 -2.4 VCE(sat) @ IC/IB = 10 -2.8 0.5 1.0 2.0 5.0 20 50 10 100 IC, COLLECTOR CURRENT (mA) 200 0 -0.5 500 -1.0 -2.0 -1.0 -0.8 TJ = 25C -1.2 -0.8 -1.6 -0.6 -0.4 -500 Figure 11. "On" Voltages RVB, TEMPERATURE COEFFICIENT (mV/C) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 10. Base-Emitter Temperature Coefficient -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) IC = -10 mA -50 mA -100 mA RVB for VBE -2.0 -250 mA -500 mA -2.4 -0.2 0 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 IB, BASE CURRENT (mA) -10 -20 -2.8 -0.5 -50 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) -500 Figure 13. Base-Emitter Temperature Coefficient Figure 12. Collector Saturation Region http://onsemi.com 231 BC490, BC490A, BC490B High Current Transistors PNP Silicon * Device Marking: 490 Device Marking: 490A Device Marking: 490B http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO -80 Vdc Collector-Base Voltage VCBO -80 Vdc Emitter-Base Voltage VEBO -4.0 Vdc Collector Current -- Continuous IC -1.0 Adc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watts mW/C -55 to +150 C Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W Operating and Storage Junction Temperature Range TJ, Tstg 2 BASE 3 EMITTER 1 2 3 THERMAL CHARACTERISTICS Characteristic CASE 29 TO-92 STYLE 17 ORDERING INFORMATION Device Semiconductor Components Industries, LLC, 2000 June, 2000 - Rev. 1 232 Package Shipping BC490 TO-92 5000 Units/Box BC490A TO-92 5000 Units/Box BC490AZL1 TO-92 2000/Ammo Pack BC490BZL1 TO-92 2000/Ammo Pack Publication Order Number: BC490/D BC490, BC490A, BC490B ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage(1) (IC = -10 mAdc, IB = 0) V(BR)CEO -80 -- -- Vdc Collector-Base Breakdown Voltage (IC = -100 Adc, IE = 0) V(BR)CBO -80 -- -- Vdc Emitter-Base Breakdown Voltage (IE = -10 Adc, IC = 0) V(BR)EBO -4.0 -- -- Vdc ICBO -- -- -100 nAdc 40 60 100 160 15 -- -- 140 -- -- -- 400 250 400 -- -- -- -0.25 -0.5 -0.5 -- -- -- -0.9 -1.0 -1.2 -- fT -- 150 -- MHz Output Capacitance (VCB = -10 Vdc, IE = 0, f = 1.0 MHz) Cob -- 9.0 -- pF Input Capacitance (VEB = -0.5 Vdc, IC = 0, f = 1.0 MHz) Cib -- 110 -- pF OFF CHARACTERISTICS Collector Cutoff Current (VCB = -60 Vdc, IE = 0) ON CHARACTERISTICS* DC Current Gain (IC = -10 mAdc, VCE = -2.0 Vdc) (IC = -100 mAdc, VCE = -2.0 Vdc) hFE -- BC490 BC490A BC490B (IC = -1.0 Adc, VCE = -5.0 Vdc) Collector-Emitter Saturation Voltage (IC = -500 mAdc, IB = -50 mAdc) (IC = -1.0 Adc, IB = -100 mAdc) VCE(sat) Base-Emitter Saturation Voltage (IC = -500 mAdc, IB = -50 mAdc) (IC = -1.0 Adc, IB = -100 mAdc) VBE(sat) Vdc Vdc DYNAMIC CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = -50 mAdc, VCE = -2.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2%. TURN-ON TIME 100 +10 V 0 tr = 3.0 ns RB Vin 5.0 F +VBB VCC +40 V -1.0 V 5.0 s TURN-OFF TIME 100 RL VCC +40 V 100 OUTPUT RB Vin 5.0 F *CS < 6.0 pF 5.0 s tr = 3.0 ns *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities Figure 1. Switching Time Test Circuits http://onsemi.com 233 100 RL OUTPUT *CS < 6.0 pF 200 100 VCE = -2.0 V TJ = 25C 70 100 70 50 30 TJ = 25C Cibo 50 C, CAPACITANCE (pF) f, T CURRENT-GAIN BANDWIDTH PRODUCT (MHz) BC490, BC490A, BC490B 30 20 10 Cobo 7.0 20 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 IC, COLLECTOR CURRENT (mA) 5.0 -0.1 -200 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Current-Gain -- Bandwidth Product -50 -100 Figure 3. Capacitance 1.0 k 700 500 ts 300 t, TIME (ns) 200 100 70 50 td @ VBE(off) = -0.5 V tf VCC = -40 V IC/IB = 10 IB1 = IB2 TJ = 25C 30 20 tr 10 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 IC, COLLECTOR CURRENT (mA) -500 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 4. Switching Time 1.0 0.7 0.5 D = 0.5 0.2 0.1 0.3 0.2 0.1 0.07 0.05 P(pk) 0.01 t1 0.02 SINGLE PULSE 0.03 SINGLE PULSE ZJC(t) = r(t) * RJC ZJA(t) = r(t) * RJA 0.02 0.01 1.0 2.0 5.0 10 t2 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN-469) TJ(pk) - TC = P(pk) ZJC(t) TJ(pk) - TA = P(pk) ZJA(t) 20 50 100 200 t, TIME (ms) 500 1.0k Figure 5. Thermal Response http://onsemi.com 234 2.0k 5.0k 10k 20k 50k 100 BC490, BC490A, BC490B -1.0 k -700 1.0 100 s TJ = 25C 0.8 -300 1.0 s -200 -100 -70 -50 1.0 ms TC = 25C TA = 25C CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT -30 -20 VBE(sat) @ IC/IB = 10 V, VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) -500 0.6 0.4 0.2 VCE(sat) @ IC/IB = 10 BC490 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) -10 -1.0 VBE(on) @ VCE = 1.0 V 0 0.5 1.0 2.0 1.0 500 200 500 -0.8 TJ = 25C 0.8 RVB, TEMPERATURE COEFFICIENT (mV/C) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 200 Figure 7. "On" Voltages Figure 6. Active Region, Safe Operating Area 0.6 5.0 10 50 100 20 IC, COLLECTOR CURRENT (mA) -1.2 50 mA IC = 10 mA 100 mA 250 mA 500 mA -1.6 0.4 -2.0 -2.4 0.2 0 0.05 RVB for VBE 0.1 0.2 1.0 2.0 10 0.5 5.0 IC, COLLECTOR CURRENT (mA) 20 -2.8 0.5 50 1.0 2.0 10 100 5.0 20 50 IC, COLLECTOR CURRENT (mA) Figure 9. Base-Emitter Temperature Coefficient Figure 8. Collector Saturation Region 400 hFE , DC CURRENT GAIN TJ = 125C 200 VCE = -1.0 V 25C -55C 100 80 60 40 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) Figure 10. DC Current Gain http://onsemi.com 235 -50 -70 -100 -200 -300 -500 BC490, BC490A, BC490B VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) -1.0 TJ = 25C VBE(sat) @ IC/IB = 10 -0.6 VBE(on) @ VCE = -1.0 V -0.4 -0.2 0 -0.5 -1.0 VCE(sat) @ IC/IB = 10 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) -500 TJ = 25C -0.8 -0.6 IC = -10 mA -50 mA 0 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 IB, BASE CURRENT (mA) -1.6 RVB for VBE -2.4 -1.0 -2.0 -500 mA -10 -20 Figure 12. Collector Saturation Region -1.2 -2.8 -0.5 -250 mA -0.2 -0.8 -2.0 -100 mA -0.4 Figure 11. "On" Voltages RVB, TEMPERATURE COEFFICIENT (mV/C) V, VOLTAGE (VOLTS) -0.8 -1.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) -500 Figure 13. Base-Emitter Temperature Coefficient http://onsemi.com 236 -50 ON Semiconductor Darlington Transistors BC517 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCES 30 Vdc Collector-Base Voltage VCB 40 Vdc Emitter-Base Voltage VEB 10 Vdc Collector Current -- Continuous IC 1.0 Adc Total Power Dissipation @ TA = 25C Derate above 25C PD 625 12 mW mW/C Total Power Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watts mW/C TJ, Tstg -55 to +150 C Symbol Max Unit Operating and Storage Junction Temperature Range 1 2 3 CASE 29-11, STYLE 17 TO-92 (TO-226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W COLLECTOR 1 BASE 2 EMITTER 3 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (IC = 2.0 mAdc, VBE = 0) V(BR)CES 30 -- -- Vdc Collector-Base Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO 40 -- -- Vdc Emitter-Base Breakdown Voltage (IE = 100 nAdc, IC = 0) V(BR)EBO 10 -- -- Vdc Collector Cutoff Current (VCE = 30 Vdc) ICES -- -- 500 nAdc Collector Cutoff Current (VCB = 30 Vdc, IE = 0) ICBO -- -- 100 nAdc Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) IEBO -- -- 100 nAdc OFF CHARACTERISTICS Semiconductor Components Industries, LLC, 2001 May, 2001 - Rev. 2 237 Publication Order Number: BC517/D BC517 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Min Typ Max Unit hFE 30,000 -- -- -- Collector-Emitter Saturation Voltage (IC = 100 mAdc, IB = 0.1 mAdc) VCE(sat) -- -- 1.0 Vdc Base-Emitter On Voltage (IC = 10 mAdc, VCE = 5.0 Vdc) VBE(on) -- -- 1.4 Vdc fT -- 200 -- MHz Characteristic ON CHARACTERISTICS(1) DC Current Gain (IC = 20 mAdc, VCE = 2.0 Vdc) SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product(2) (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width 2.0%. 2. fT = |hfe| * ftest RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model http://onsemi.com 238 BC517 NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25C) 2.0 BANDWIDTH = 1.0 Hz RS 0 200 i n, NOISE CURRENT (pA) en, NOISE VOLTAGE (nV) 500 100 10 A 50 100 A 20 IC = 1.0 mA 10 5.0 BANDWIDTH = 1.0 Hz 1.0 0.7 0.5 IC = 1.0 mA 0.3 0.2 100 A 0.1 0.07 0.05 10 A 0.03 10 20 50 100 200 500 1k 2k 5k 10k 20k f, FREQUENCY (Hz) 50k 100k 0.02 10 20 50 100 200 14 200 IC = 10 A 70 50 100 A 30 20 10 1.0 mA 1.0 2.0 BANDWIDTH = 10 Hz TO 15.7 kHz 12 BANDWIDTH = 10 Hz TO 15.7 kHz 100 50k 100k Figure 3. Noise Current NF, NOISE FIGURE (dB) VT, TOTAL WIDEBAND NOISE VOLTAGE (nV) Figure 2. Noise Voltage 500 1k 2k 5k 10k 20k f, FREQUENCY (Hz) 10 10 A 8.0 100 A 6.0 4.0 IC = 1.0 mA 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (k) 500 1000 0 1.0 Figure 4. Total Wideband Noise Voltage 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (k) Figure 5. Wideband Noise Figure http://onsemi.com 239 500 1000 BC517 SMALL-SIGNAL CHARACTERISTICS 4.0 |h fe |, SMALL-SIGNAL CURRENT GAIN C, CAPACITANCE (pF) 20 TJ = 25C 10 7.0 Cibo Cobo 5.0 3.0 2.0 0.04 0.1 0.2 0.4 1.0 2.0 4.0 VR, REVERSE VOLTAGE (VOLTS) 10 20 2.0 1.0 0.8 0.6 0.4 0.2 0.5 40 hFE, DC CURRENT GAIN TJ = 125C 100k 70k 50k 25C 30k 20k 10k 7.0k 5.0k -55C 3.0k 2.0k 5.0 7.0 10 VCE = 5.0 V 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 RV, TEMPERATURE COEFFICIENTS (mV/C) TJ = 25C V, VOLTAGE (VOLTS) 1.4 VBE(sat) @ IC/IB = 1000 1.2 VBE(on) @ VCE = 5.0 V 1.0 VCE(sat) @ IC/IB = 1000 5.0 7.0 10 0.5 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) 500 TJ = 25C 2.5 IC = 10 mA 50 mA 250 mA 500 mA 2.0 1.5 1.0 0.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (A) 500 1000 Figure 9. Collector Saturation Region 1.6 0.6 2.0 3.0 Figure 8. DC Current Gain 0.8 1.0 Figure 7. High Frequency Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 6. Capacitance 200k VCE = 5.0 V f = 100 MHz TJ = 25C 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 -1.0 -2.0 *APPLIES FOR IC/IB hFE/3.0 25C TO 125C *RVC FOR VCE(sat) -55C TO 25C -3.0 25C TO 125C -4.0 VB FOR VBE -5.0 -55C TO 25C -6.0 5.0 7.0 10 Figure 10. "On" Voltages 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) Figure 11. Temperature Coefficients http://onsemi.com 240 500 1.0 0.7 0.5 D = 0.5 0.2 0.3 0.2 0.1 SINGLE PULSE 0.05 0.1 0.07 0.05 SINGLE PULSE 0.03 ZJC(t) = r(t) * RJCTJ(pk) - TC = P(pk) ZJC(t) ZJA(t) = r(t) * RJATJ(pk) - TA = P(pk) ZJA(t) 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 500 1.0k 2.0k 5.0k 10k Figure 12. Thermal Response 1.0k 700 500 IC, COLLECTOR CURRENT (mA) () RESISTANCE (NORMALIZED) BC517 300 200 FIGURE A 1.0 ms TA = 25C tP TC = 25C 100 s PP 1.0 s 100 70 50 PP t1 30 20 10 0.4 0.6 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 1/f 1.0 2.0 4.0 6.0 10 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 13. Active Region Safe Operating Area t DUTYCYCLE t1f 1 tP PEAK PULSE POWER = PP 40 Design Note: Use of Transient Thermal Resistance Data http://onsemi.com 241 ON Semiconductor BC546 BC546B BC547A BC547B BC547C BC548B BC548C Amplifier Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC546 BC547 BC548 Unit Collector-Emitter Voltage VCEO 65 45 30 Vdc Collector-Base Voltage VCBO 80 50 30 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current -- Continuous IC 100 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watt mW/C TJ, Tstg -55 to +150 C Operating and Storage Junction Temperature Range 1 2 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W 3 CASE 29-04, STYLE 17 TO-92 (TO-226AA) COLLECTOR 1 2 BASE 3 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 1.0 mA, IB = 0) BC546 BC547 BC548 V(BR)CEO 65 45 30 -- -- -- -- -- -- V Collector-Base Breakdown Voltage (IC = 100 Adc) BC546 BC547 BC548 V(BR)CBO 80 50 30 -- -- -- -- -- -- V Emitter-Base Breakdown Voltage (IE = 10 A, IC = 0) BC546 BC547 BC548 V(BR)EBO 6.0 6.0 6.0 -- -- -- -- -- -- V -- -- -- -- 0.2 0.2 0.2 -- 15 15 15 4.0 nA Collector Cutoff Current (VCE = 70 V, VBE = 0) (VCE = 50 V, VBE = 0) (VCE = 35 V, VBE = 0) (VCE = 30 V, TA = 125C) Semiconductor Components Industries, LLC, 2001 May, 2001 - Rev. 3 ICES BC546 BC547 BC548 BC546/547/548 242 A Publication Order Number: BC546/D BC546 BC546B BC547A BC547B BC547C BC548B BC548C ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max BC547A BC546B/547B/548B BC548C -- -- -- 90 150 270 -- -- -- (IC = 2.0 mA, VCE = 5.0 V) BC546 BC547 BC548 BC547A BC546B/547B/548B BC547C/BC548C 110 110 110 110 200 420 -- -- -- 180 290 520 450 800 800 220 450 800 (IC = 100 mA, VCE = 5.0 V) BC547A/548A BC546B/547B/548B BC548C -- -- -- 120 180 300 -- -- -- -- -- -- 0.09 0.2 0.3 0.25 0.6 0.6 -- 0.7 -- 0.55 -- -- -- 0.7 0.77 150 150 150 300 300 300 -- -- -- Unit ON CHARACTERISTICS DC Current Gain (IC = 10 A, VCE = 5.0 V) hFE Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) (IC = 100 mA, IB = 5.0 mA) (IC = 10 mA, IB = See Note 1) VCE(sat) Base-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) VBE(sat) Base-Emitter On Voltage (IC = 2.0 mA, VCE = 5.0 V) (IC = 10 mA, VCE = 5.0 V) VBE(on) -- V V V SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) fT BC546 BC547 BC548 MHz Output Capacitance (VCB = 10 V, IC = 0, f = 1.0 MHz) Cobo -- 1.7 4.5 pF Input Capacitance (VEB = 0.5 V, IC = 0, f = 1.0 MHz) Cibo -- 10 -- pF 125 125 125 240 450 -- -- 220 330 600 500 900 260 500 900 -- -- -- 2.0 2.0 2.0 10 10 10 Small-Signal Current Gain (IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz) Noise Figure (IC = 0.2 mA, VCE = 5.0 V, RS = 2 k, f = 1.0 kHz, f = 200 Hz) hfe BC546 BC547/548 BC547A BC546B/547B/548B BC547C/548C -- NF BC546 BC547 BC548 Note 1: IB is value for which IC = 11 mA at VCE = 1.0 V. Figure 14. http://onsemi.com 243 dB BC546 BC546B BC547A BC547B BC547C BC548B BC548C BC547/BC548 1.0 VCE = 10 V TA = 25C 1.5 TA = 25C 0.9 0.8 1.0 V, VOLTAGE (VOLTS) hFE , NORMALIZED DC CURRENT GAIN 2.0 0.8 0.6 0.4 VBE(sat) @ IC/IB = 10 0.7 VBE(on) @ VCE = 10 V 0.6 0.5 0.4 0.3 0.2 0.3 VCE(sat) @ IC/IB = 10 0.1 0.2 0.2 0.5 50 1.0 20 2.0 5.0 10 IC, COLLECTOR CURRENT (mAdc) 100 0 0.1 200 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) Figure 2. "Saturation" and "On" Voltages 2.0 VB, TEMPERATURE COEFFICIENT (mV/ C) VCE , COLLECTOR-EMITTER VOLTAGE (V) Figure 1. Normalized DC Current Gain TA = 25C 1.6 IC = 200 mA 1.2 IC = IC = 10 mA 20 mA 0.8 IC = 50 mA IC = 100 mA 0.4 0 0.02 10 1.0 0.1 IB, BASE CURRENT (mA) 1.0 -55C to +125C 1.2 1.6 2.0 2.4 2.8 20 Cib Cob 2.0 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 40 f, T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) C, CAPACITANCE (pF) TA = 25C 3.0 1.0 100 Figure 4. Base-Emitter Temperature Coefficient 10 5.0 10 1.0 IC, COLLECTOR CURRENT (mA) 0.2 Figure 3. Collector Saturation Region 7.0 50 70 100 Figure 5. Capacitances 400 300 200 VCE = 10 V TA = 25C 100 80 60 40 30 20 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 30 Figure 6. Current-Gain - Bandwidth Product http://onsemi.com 244 50 BC546 BC546B BC547A BC547B BC547C BC548B BC548C BC546 TA = 25C VCE = 5 V TA = 25C 0.8 V, VOLTAGE (VOLTS) hFE , DC CURRENT GAIN (NORMALIZED) 1.0 2.0 1.0 0.5 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 5.0 V 0.4 0.2 0.2 VCE(sat) @ IC/IB = 10 0 10 100 1.0 IC, COLLECTOR CURRENT (mA) 0.1 0.2 0.2 0.5 1.0 2.0 TA = 25C 1.6 20 mA 50 mA 100 mA 200 mA 1.2 IC = 10 mA 0.8 0.4 0 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 5.0 10 20 Cib 10 6.0 Cob 0.1 0.2 0.5 5.0 1.0 2.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 200 -1.4 -1.8 50 VB for VBE -55C to 125C -2.2 -2.6 -3.0 f, T CURRENT-GAIN - BANDWIDTH PRODUCT C, CAPACITANCE (pF) TA = 25C 2.0 200 0.2 0.5 10 20 5.0 1.0 2.0 IC, COLLECTOR CURRENT (mA) Figure 10. Base-Emitter Temperature Coefficient 40 4.0 100 -1.0 Figure 9. Collector Saturation Region 20 50 Figure 8. "On" Voltage VB, TEMPERATURE COEFFICIENT (mV/ C) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. DC Current Gain 10 20 2.0 5.0 IC, COLLECTOR CURRENT (mA) 500 VCE = 5 V TA = 25C 200 100 50 20 1.0 5.0 10 50 100 IC, COLLECTOR CURRENT (mA) 100 Figure 11. Capacitance Figure 12. Current-Gain - Bandwidth Product http://onsemi.com 245 ON Semiconductor Low Noise Transistors BC550C NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 45 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector Current -- Continuous IC 100 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watt mW/C TJ, Tstg -55 to +150 C Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W Operating and Storage Junction Temperature Range 1 2 3 CASE 29-11, STYLE 17 TO-92 (TO-226AA) THERMAL CHARACTERISTICS Characteristic COLLECTOR 1 2 BASE 3 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 45 -- -- 50 -- -- 5.0 -- -- Vdc -- -- -- -- 15 5.0 nAdc Adc -- -- 15 nAdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO Collector-Base Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 30 V, IE = 0) (VCB = 30 V, IE = 0, TA = +125C) ICBO Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) IEBO Semiconductor Components Industries, LLC, 2001 May, 2001 - Rev. 0 246 Vdc Vdc Publication Order Number: BC550C/D BC550C ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit 100 420 270 500 -- 800 -- -- -- 0.075 0.3 0.25 0.25 0.6 0.6 -- 1.1 -- -- -- 0.55 0.52 0.55 0.62 -- -- 0.7 fT -- 250 -- MHz Ccbo -- 2.5 -- pF 450 600 900 -- -- 0.6 -- 2.5 10 ON CHARACTERISTICS DC Current Gain (IC = 10 Adc, VCE = 5.0 Vdc) (IC = 2.0 mAdc, VCE = 5.0 Vdc) hFE Collector-Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) (IC = 10 mAdc, IB = see note 1) (IC = 100 mAdc, IB = 5.0 mAdc, see note 2) VCE(sat) Base-Emitter Saturation Voltage (IC = 100 mAdc, IB = 5.0 mAdc) VBE(sat) Base-Emitter On Voltage (IC = 10 Adc, VCE = 5.0 Vdc) (IC = 100 Adc, VCE = 5.0 Vdc) (IC = 2.0 mAdc, VCE = 5.0 Vdc) VBE(on) -- Vdc Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Collector-Base Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Small-Signal Current Gain (IC = 2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz) hfe Noise Figure (IC = 200 Adc, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz) (IC = 200 Adc, VCE = 5.0 Vdc, RS = 100 k, f = 1.0 kHz) dB NF1 NF2 NOTES: 1. IB is value for which IC = 11 mA at VCE = 1.0 V. 2. Pulse test = 300 s - Duty cycle = 2%. RS -- in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model http://onsemi.com 247 BC550C 1.0 VCE = 10 V TA = 25C 1.5 0.9 1.0 0.8 0.6 0.4 VBE(sat) @ IC/IB = 10 0.7 VBE(on) @ VCE = 10 V 0.6 0.5 0.4 0.3 0.2 0.3 VCE(sat) @ IC/IB = 10 0.1 0.2 0.2 0.5 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT (mAdc) 0 0.1 100 200 Figure 2. Normalized DC Current Gain 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mAdc) 50 100 Figure 3. "Saturation" and "On" Voltages 10 400 300 7.0 100 80 60 C, CAPACITANCE (pF) 200 VCE = 10 V TA = 25C 40 30 TA = 25C Cib 5.0 3.0 Cob 2.0 20 0.5 0.7 1.0 2.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 1.0 0.4 50 0.6 1.0 Figure 4. Current-Gain -- Bandwidth Product r b, BASE SPREADING RESISTANCE (OHMS) f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) TA = 25C 0.8 V, VOLTAGE (VOLTS) hFE, NORMALIZED DC CURRENT GAIN 2.0 2.0 4.0 10 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Capacitance 170 160 150 VCE = 10 V f = 1.0 kHz TA = 25C 140 130 120 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mAdc) 5.0 Figure 6. Base Spreading Resistance http://onsemi.com 248 10 20 40 BC556B, BC557, A, B, C, BC558B, C Amplifier Transistors PNP Silicon http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value VCEO BC556 BC557 BC558 Collector-Base Voltage Vdc -65 -45 -30 VCBO BC556 BC557 BC558 Emitter-Base Voltage Unit Vdc Collector Current - Continuous Collector Current - Peak IC ICM -100 -200 mAdc Base Current - Peak IBM -200 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD Total Device Dissipation @ TC = 25C Derate above 25C PD 625 5.0 mW mW/C 1.5 12 Watts mW/C -55 to +150 C Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 TJ, Tstg THERMAL CHARACTERISTICS Semiconductor Components Industries, LLC, 2001 June, 2000 - Rev. 1 2 3 EMITTER -80 -50 -30 -5.0 Characteristic 1 Vdc VEBO Operating and Storage Junction Temperature Range 2 BASE C/W 249 3 CASE 29 TO-92 STYLE 17 ORDERING INFORMATION Device Package Shipping BC556B TO-92 5000 Units/Box BC556BRL1 TO-92 2000/Tape & Reel BC556BZL1 TO-92 2000/Ammo Pack BC557 TO-92 5000 Units/Box BC557ZL1 TO-92 2000/Ammo Pack BC557A TO-92 5000 Units/Box BC557AZL1 TO-92 2000/Ammo Pack BC557B TO-92 5000 Units/Box BC557BRL1 TO-92 2000/Tape & Reel BC557BZL1 TO-92 2000/Ammo Pack BC557C TO-92 5000 Units/Box BC557CZL1 TO-92 2000/Ammo Pack BC558B TO-92 5000 Units/Box BC558BRL TO-92 2000/Tape & Reel BC558BRL1 TO-92 2000/Tape & Reel BC558BZL1 TO-92 2000/Ammo Pack BC558C TO-92 5000 Units/Box BC558CRL1 TO-92 2000/Tape & Reel BC558ZL1 TO-92 2000/Ammo Pack BC558CZL1 TO-92 2000/Ammo Pack Publication Order Number: BC556/D BC556B, BC557, A, B, C, BC558B, C ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max -65 -45 -30 - - - - - - -80 -50 -30 - - - - - - -5.0 -5.0 -5.0 - - - - - - - - - - - - -2.0 -2.0 -2.0 - - - -100 -100 -100 -4.0 -4.0 -4.0 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = -2.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = -100 Adc) Emitter-Base Breakdown Voltage (IE = -100 Adc, IC = 0) Collector-Emitter Leakage Current (VCES = -40 V) (VCES = -20 V) (VCES = -20 V, TA = 125C) V(BR)CEO BC556 BC557 BC558 V V(BR)CBO BC556 BC557 BC558 V V(BR)EBO BC556 BC557 BC558 V ICES BC556 BC557 BC558 BC556 BC557 BC558 http://onsemi.com 250 nA A BC556B, BC557, A, B, C, BC558B, C ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max - - - 120 120 180 420 - - - 90 150 270 - 170 290 500 120 180 300 - - - 800 220 460 800 - - - - - - -0.075 -0.3 -0.25 -0.3 -0.6 -0.65 - - -0.7 -1.0 - - -0.55 - -0.62 -0.7 -0.7 -0.82 - - - 280 320 360 - - - - 3.0 6.0 - - - 2.0 2.0 2.0 10 10 10 125 125 240 450 - - - - 900 260 500 900 Unit ON CHARACTERISTICS DC Current Gain (IC = -10 Adc, VCE = -5.0 V) (IC = -2.0 mAdc, VCE = -5.0 V) (IC = -100 mAdc, VCE = -5.0 V) hFE A Series Device B Series Devices C Series Devices BC557 A Series Device B Series Devices C Series Devices A Series Device B Series Devices C Series Devices Collector-Emitter Saturation Voltage (IC = -10 mAdc, IB = -0.5 mAdc) (IC = -10 mAdc, IB = see Note 1) (IC = -100 mAdc, IB = -5.0 mAdc) VCE(sat) Base-Emitter Saturation Voltage (IC = -10 mAdc, IB = -0.5 mAdc) (IC = -100 mAdc, IB = -5.0 mAdc) VBE(sat) Base-Emitter On Voltage (IC = -2.0 mAdc, VCE = -5.0 Vdc) (IC = -10 mAdc, VCE = -5.0 Vdc) VBE(on) - V V V SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (IC = -10 mA, VCE = -5.0 V, f = 100 MHz) fT BC556 BC557 BC558 Output Capacitance (VCB = -10 V, IC = 0, f = 1.0 MHz) Noise Figure (IC = -0.2 mAdc, VCE = -5.0 V, RS = 2.0 k, f = 1.0 kHz, f = 200 Hz) Small-Signal Current Gain (IC = -2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz) Cob MHz NF BC556 BC557 BC558 dB hfe BC557 A Series Device B Series Devices C Series Devices - Note 1: IC = -10 mAdc on the constant base current characteristics, which yields the point IC = -11 mAdc, VCE = -1.0 V. http://onsemi.com 251 pF BC556B, BC557, A, B, C, BC558B, C BC557/BC558 1.5 -1.0 TA = 25C -0.9 VCE = -10 V TA = 25C -0.8 1.0 V, VOLTAGE (VOLTS) hFE , NORMALIZED DC CURRENT GAIN 2.0 0.7 0.5 -0.7 VBE(on) @ VCE = -10 V -0.6 -0.5 -0.4 -0.3 -0.2 0.3 VCE(sat) @ IC/IB = 10 -0.1 0.2 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 IC, COLLECTOR CURRENT (mAdc) 0 -0.1 -0.2 -100 -200 TA = 25C -1.6 -1.2 IC = -10 mA IC = -50 mA IC = -200 mA IC = -100 mA IC = -20 mA -0.4 -0.02 1.6 2.0 2.4 2.8 -10 -20 -0.1 -1.0 IB, BASE CURRENT (mA) -0.2 TA = 25C 5.0 Cob 2.0 1.0 -0.4 -0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40 f, T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) Cib 3.0 -10 -1.0 IC, COLLECTOR CURRENT (mA) -100 Figure 4. Base-Emitter Temperature Coefficient 10 7.0 -55C to +125C 1.2 Figure 3. Collector Saturation Region C, CAPACITANCE (pF) -50 -100 1.0 -2.0 0 -0.5 -1.0 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mAdc) Figure 2. "Saturation" and "On" Voltages VB , TEMPERATURE COEFFICIENT (mV/ C) VCE , COLLECTOR-EMITTER VOLTAGE (V) Figure 1. Normalized DC Current Gain -0.8 VBE(sat) @ IC/IB = 10 400 300 200 150 VCE = -10 V TA = 25C 100 80 60 40 30 20 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc) Figure 5. Capacitances Figure 6. Current-Gain - Bandwidth Product http://onsemi.com 252 BC556B, BC557, A, B, C, BC558B, C BC556 TJ = 25C VCE = -5.0 V TA = 25C -0.8 V, VOLTAGE (VOLTS) hFE , DC CURRENT GAIN (NORMALIZED) -1.0 2.0 1.0 0.5 VBE(sat) @ IC/IB = 10 -0.6 VBE @ VCE = -5.0 V -0.4 -0.2 0.2 VCE(sat) @ IC/IB = 10 0 -0.2 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) -0.1 -0.2 -0.5 -50 -100 -200 -5.0 -10 -20 -1.0 -2.0 IC, COLLECTOR CURRENT (mA) Figure 8. "On" Voltage -2.0 -1.6 -1.2 IC = -10 mA -20 mA -50 mA -100 mA -200 mA -0.8 -0.4 TJ = 25C 0 -0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 IB, BASE CURRENT (mA) -5.0 -10 VB, TEMPERATURE COEFFICIENT (mV/ C) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. DC Current Gain -20 -1.0 -1.4 -1.8 -2.6 -3.0 -0.2 20 Cib 10 8.0 6.0 Cob 4.0 2.0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 VR, REVERSE VOLTAGE (VOLTS) -0.5 -1.0 -50 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mA) -100 -200 Figure 10. Base-Emitter Temperature Coefficient f, T CURRENT-GAIN - BANDWIDTH PRODUCT C, CAPACITANCE (pF) TJ = 25C -55C to 125C -2.2 Figure 9. Collector Saturation Region 40 VB for VBE VCE = -5.0 V 500 200 100 50 20 -100 -1.0 -10 IC, COLLECTOR CURRENT (mA) -50 -100 Figure 11. Capacitance Figure 12. Current-Gain - Bandwidth Product http://onsemi.com 253 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) BC556B, BC557, A, B, C, BC558B, C 1.0 0.7 0.5 D = 0.5 0.2 0.3 0.2 0.1 0.1 0.07 0.05 0.05 SINGLE PULSE P(pk) SINGLE PULSE t1 t2 0.03 DUTY CYCLE, D = t1/t2 0.02 0.01 ZJC(t) = (t) RJC RJC = 83.3 C/W MAX ZJA(t) = r(t) RJA RJA = 200 C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) 0.1 0.2 0.5 1.0 2.0 10 5.0 20 50 t, TIME (ms) 100 200 500 1.0k 2.0k 5.0k 10 Figure 13. Thermal Response -200 1s IC, COLLECTOR CURRENT (mA) -100 TA = 25C -50 3 ms The safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 14 is based upon TJ(pk) = 150C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided T J(pk) 150C. TJ(pk) may be calculated from the data in Figure 13. At high case or ambient temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. TJ = 25C BC558 BC557 BC556 -10 -5.0 -2.0 -1.0 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT -5.0 -10 -30 -45 -65 -100 VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 14. Active Region - Safe Operating Area http://onsemi.com 254 ON Semiconductor Low Noise Transistors BC559B, C BC560C PNP Silicon MAXIMUM RATINGS Rating Symbol BC559 BC560 Unit Collector-Emitter Voltage VCEO -30 -45 Vdc Collector-Base Voltage VCBO -30 -50 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current -- Continuous IC -100 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watt mW/C TJ, Tstg -55 to +150 C Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W Operating and Storage Junction Temperature Range 1 2 3 CASE 29-04, STYLE 17 TO-92 (TO-226AA) THERMAL CHARACTERISTICS COLLECTOR 1 2 BASE 3 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit -30 -45 -- -- -- -- -30 -50 -- -- -- -- -5.0 -- -- Vdc -- -- -- -- -15 -5.0 nAdc Adc -- -- -15 nAdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = -10 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = -10 Adc, IE = 0) V(BR)CEO BC559 BC560 V(BR)CBO BC559 BC560 Emitter-Base Breakdown Voltage (IE = -10 Adc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = -30 Vdc, IE = 0) (VCB = -30 Vdc, IE = 0, TA = +125C) ICBO Emitter Cutoff Current (VEB = -4.0 Vdc, IC = 0) IEBO Semiconductor Components Industries, LLC, 2001 September, 2001 - Rev. 0 Vdc 255 Vdc Publication Order Number: BC559B/D BC559B, C BC560C ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit 100 100 180 380 150 270 290 500 -- -- 460 800 -- -- -- -0.075 -0.3 -0.25 -0.25 -0.6 -- -- -1.1 -- -- -- -0.55 -0.52 -0.55 -0.62 -- -- -0.7 fT -- 250 -- MHz Ccbo -- 2.5 -- pF 240 450 330 600 500 900 -- -- 0.5 -- 2.0 10 ON CHARACTERISTICS DC Current Gain (IC = -10 Adc, VCE = -5.0 Vdc) (IC = -2.0 mAdc, VCE = -5.0 Vdc) hFE BC559B BC559C/560C BC559B BC559C/560C Collector-Emitter Saturation Voltage (IC = -10 mAdc, IB = -0.5 mAdc) (IC = -10 mAdc, IB = see note 1) (IC = -100 mAdc, IB = -5.0 mAdc, see note 2) VCE(sat) Base-Emitter Saturation Voltage (IC = -100 mAdc, IB = -5.0 mAdc) VBE(sat) Base-Emitter On Voltage (IC = -10 Adc, VCE = -5.0 Vdc) (IC = -100 Adc, VCE = -5.0 Vdc) (IC = -2.0 mAdc, VCE = -5.0 Vdc) VBE(on) -- Vdc Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = -10 mAdc, VCE = -5.0 Vdc, f = 100 MHz) Collector-Base Capacitance (VCB = -10 Vdc, IE = 0, f = 1.0 MHz) Small-Signal Current Gain (IC = -2.0 mAdc, VCE = -5.0 V, f = 1.0 kHz) hfe BC559B BC559C/BC560C Noise Figure (IC = -200 Adc, VCE = -5.0 Vdc, RS = 2.0 k, f = 1.0 kHz) (IC = -200 Adc, VCE = -5.0 Vdc, RS = 100 k, f = 1.0 kHz, f = 200 kHz) NOTES: 1. IB is value for which IC = -11 mA at VCE = -1.0 V. 2. Pulse test = 300 s - Duty cycle = 2%. Figure 15. http://onsemi.com 256 -- dB NF1 NF2 BC559B, C BC560C -1.0 VCE = -10 V TA = 25C 1.5 -0.9 1.0 0.8 0.6 0.4 VBE(sat) @ IC/IB = 10 -0.7 VBE(on) @ VCE = -10 V -0.6 -0.5 -0.4 -0.3 -0.2 0.3 VCE(sat) @ IC/IB = 10 -0.1 0.2 -0.2 -0.5 0 -0.1 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mAdc) Figure 1. Normalized DC Current Gain -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mAdc) -50 -100 Figure 2. "Saturation" and "On" Voltages 10 400 300 7.0 100 80 60 C, CAPACITANCE (pF) 200 VCE = -10 V TA = 25C 40 30 TA = 25C Cib 5.0 3.0 Cob 2.0 20 -0.5 -0.7 -1.0 -2.0 -5.0 -7.0 -10 -20 IC, COLLECTOR CURRENT (mAdc) 1.0 -0.4 -0.6 -50 -1.0 -2.0 -4.0 -10 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Current-Gain -- Bandwidth Product r b, BASE SPREADING RESISTANCE (OHMS) f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) TA = 25C -0.8 V, VOLTAGE (VOLTS) hFE, NORMALIZED DC CURRENT GAIN 2.0 Figure 4. Capacitance 170 160 150 VCE = -10 V f = 1.0 kHz TA = 25C 140 130 120 -0.1 -0.2 -0.5 -1.0 -2.0 IC, COLLECTOR CURRENT (mAdc) -5.0 Figure 5. Base Spreading Resistance http://onsemi.com 257 -10 -20 -40 ON Semiconductor Darlington Transistors BC618 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 55 Vdc Collector-Base Voltage VCBO 80 Vdc Emitter-Base Voltage VEBO 12 Vdc Collector Current -- Continuous IC 1.0 Adc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watts mW/C TJ, Tstg -55 to +150 C Operating and Storage Junction Temperature Range 1 2 CASE 29-11, STYLE 17 TO-92 (TO-226AA) COLLECTOR 1 THERMAL CHARACTERISTICS Characteristic 3 Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W BASE 2 EMITTER 3 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (IC = 10 mAdc, VBE = 0) V(BR)CEO 55 -- -- Vdc Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0) V(BR)CBO 80 -- -- Vdc Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO 12 -- -- Vdc Collector Cutoff Current (VCE = 60 Vdc, VBE = 0) ICES -- -- 50 nAdc Collector Cutoff Current (VCB = 60 Vdc, IE = 0) ICBO -- -- 50 nAdc Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) IEBO -- -- 50 nAdc OFF CHARACTERISTICS Semiconductor Components Industries, LLC, 2001 May, 2001 - Rev.2 258 Publication Order Number: BC618/D BC618 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Min Typ Max Unit Collector-Emitter Saturation Voltage (IC = 200 mA, IB = 0.2 mA) VCE(sat) -- -- 1.1 Vdc Base-Emitter Saturation Voltage (IC = 200 mA, IB = 0.2 mA) VBE(sat) -- -- 1.6 Vdc DC Current Gain (IC = 100 A, VCE = 5.0 Vdc) (IC = 10 mA, VCE = 5.0 Vdc) (IC = 200 mA, VCE = 5.0 Vdc) (IC = 1.0 A, VCE = 5.0 Vdc) hFE 2000 4000 10000 4000 -- -- -- -- -- -- 50000 -- fT 150 -- -- MHz Output Capacitance (VCB = 10 V, IE = 0, f = 1.0 MHz) Cob -- 4.5 7.0 pF Input Capacitance (VEB = 5.0 V, IE = 0, f = 1.0 MHz) Cib -- 5.0 9.0 pF Characteristic ON CHARACTERISTICS -- DYNAMIC CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 500 mA, VCE = 5.0 Vdc, P = 100 MHz) RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model http://onsemi.com 259 BC618 NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25C) 2.0 BANDWIDTH = 1.0 Hz RS 0 200 i n, NOISE CURRENT (pA) en, NOISE VOLTAGE (nV) 500 100 10 A 50 100 A 20 IC = 1.0 mA 10 5.0 BANDWIDTH = 1.0 Hz 1.0 0.7 0.5 IC = 1.0 mA 0.3 0.2 100 A 0.1 0.07 0.05 10 A 0.03 10 20 50 100 200 500 1k 2k 5k 10k 20k f, FREQUENCY (Hz) 50k 100k 0.02 10 20 50 100 200 14 200 IC = 10 A 70 50 100 A 30 20 10 1.0 mA 1.0 2.0 BANDWIDTH = 10 Hz TO 15.7 kHz 12 BANDWIDTH = 10 Hz TO 15.7 kHz 100 50k 100k Figure 3. Noise Current NF, NOISE FIGURE (dB) VT, TOTAL WIDEBAND NOISE VOLTAGE (nV) Figure 2. Noise Voltage 500 1k 2k 5k 10k 20k f, FREQUENCY (Hz) 10 10 A 8.0 100 A 6.0 4.0 IC = 1.0 mA 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (k) 500 1000 0 1.0 Figure 4. Total Wideband Noise Voltage 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (k) Figure 5. Wideband Noise Figure http://onsemi.com 260 500 1000 BC618 SMALL-SIGNAL CHARACTERISTICS 4.0 |h fe |, SMALL-SIGNAL CURRENT GAIN C, CAPACITANCE (pF) 20 TJ = 25C 10 7.0 Cibo Cobo 5.0 3.0 2.0 0.04 0.1 0.2 0.4 1.0 2.0 4.0 VR, REVERSE VOLTAGE (VOLTS) 10 20 2.0 1.0 0.8 0.6 0.4 0.2 0.5 40 hFE, DC CURRENT GAIN TJ = 125C 100k 70k 50k 25C 30k 20k 10k 7.0k 5.0k -55C 3.0k 2.0k 5.0 7.0 10 VCE = 5.0 V 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 RV, TEMPERATURE COEFFICIENTS (mV/C) TJ = 25C V, VOLTAGE (VOLTS) 1.4 VBE(sat) @ IC/IB = 1000 1.2 VBE(on) @ VCE = 5.0 V 1.0 VCE(sat) @ IC/IB = 1000 5.0 7.0 10 0.5 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) 500 TJ = 25C 2.5 IC = 10 mA 50 mA 250 mA 500 mA 2.0 1.5 1.0 0.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (A) 500 1000 Figure 9. Collector Saturation Region 1.6 0.6 2.0 3.0 Figure 8. DC Current Gain 0.8 1.0 Figure 7. High Frequency Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 6. Capacitance 200k VCE = 5.0 V f = 100 MHz TJ = 25C 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 -1.0 -2.0 *APPLIES FOR IC/IB hFE/3.0 25C TO 125C *RVC FOR VCE(sat) -55C TO 25C -3.0 25C TO 125C -4.0 VB FOR VBE -5.0 -55C TO 25C -6.0 5.0 7.0 10 Figure 10. "On" Voltages 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) Figure 11. Temperature Coefficients http://onsemi.com 261 500 ( ), RESISTANCE (NORMALIZED) BC618 1.0 0.7 0.5 D = 0.5 0.2 0.3 0.2 0.1 SINGLE PULSE 0.05 0.1 0.07 0.05 SINGLE PULSE 0.03 ZJC(t) = r(t) * RJCTJ(pk) - TC = P(pk) ZJC(t) ZJA(t) = r(t) * RJATJ(pk) - TA = P(pk) ZJA(t) 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 500 1.0k 2.0k 5.0k 10k Figure 12. Thermal Response IC, COLLECTOR CURRENT (mA) 1.0k 700 500 300 200 FIGURE A 1.0 ms TA = 25C tP TC = 25C 100 s PP 1.0 s 100 70 50 PP t1 30 20 10 0.4 0.6 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 1/f 1.0 2.0 4.0 6.0 10 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 13. Active Region Safe Operating Area t DUTYCYCLE t1f 1 tP PEAK PULSE POWER = PP 40 Design Note: Use of Transient Thermal Resistance Data http://onsemi.com 262 BC635, BC637, BC639, BC639-16 High Current Transistors NPN Silicon http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value VCEO BC635 BC637 BC639 Collector-Base Voltage VCBO 1 EMITTER Vdc 45 60 80 VEBO 5.0 Vdc Collector Current -- Continuous IC 1.0 Adc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1 800 12 mW mW/C -55 to +150 C Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W Operating and Storage Junction Temperature Range TJ, Tstg Semiconductor Components Industries, LLC, 2001 June, 2000 - Rev. 3 2 3 TO-92 (TO-226AA) CASE 29 STYLE 14 ORDERING INFORMATION THERMAL CHARACTERISTICS Characteristic 3 BASE Vdc 45 60 80 BC635 BC637 BC639 Emitter-Base Voltage Unit 263 Device Package Shipping BC635RL1 TO-92 2000/Tape & Reel BC635ZL1 TO-92 2000/Ammo Pack BC637 TO-92 5000 Units/Box BC639 TO-92 5000 Units/Box BC639RL1 TO-92 2000/Tape & Reel BC639ZL1 TO-92 2000/Ammo Pack BC639-16ZL1 TO-92 2000/Ammo Pack Publication Order Number: BC635/D BC635, BC637, BC639, BC639-16 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 45 60 80 -- -- -- -- -- -- 120 -- -- 45 60 80 -- -- -- -- -- -- 5.0 -- -- Vdc -- -- -- -- 100 10 nAdc Adc 25 40 40 40 100 25 -- -- -- -- -- -- -- 250 160 160 250 -- OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (1) (IC = 10 Adc, IB = 0) V(BR)CEO BC635 BC637 BC639 Collector-Emitter Zero-Gate Breakdown Voltage (1) (IC = 100 Adc, IB = 0) BC639-16 V(BR)CES Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0) V(BR)CBO BC635 BC637 BC639 Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 30 Vdc, IE = 0, TA = 125C) Vdc Vdc Vdc ICBO ON CHARACTERISTICS (1) DC Current Gain (IC = 5.0 mAdc, VCE = 2.0 Vdc) (IC = 150 mAdc, VCE = 2.0 Vdc) hFE BC635 BC637 BC639 BC639-16ZLT1 (IC = 500 mA, VCE = 2.0 V) -- Collector-Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) VCE(sat) -- -- 0.5 Vdc Base-Emitter On Voltage (IC = 500 mAdc, VCE = 2.0 Vdc) VBE(on) -- -- 1.0 Vdc fT -- 200 -- MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cob -- 7.0 -- pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cib -- 50 -- pF DYNAMIC CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. http://onsemi.com 264 BC635, BC637, BC639, BC639-16 500 1000 VCE = 2 V SOA = 1S 200 PD TA 25C 100 50 hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (mA) 500 PD TC 25C 20 10 5 1 BC635 BC637 BC639 PD TA 25C PD TC 25C 2 1 2 3 4 5 7 10 20 30 40 50 70 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 200 100 50 20 100 1 3 10 30 50 100 IC, COLLECTOR CURRENT (mA) 300 500 1000 Figure 2. DC Current Gain 500 1 300 V, VOLTAGE (VOLTS) 0.8 VCE = 2 V 100 50 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 2 V 0.6 0.4 0.2 VCE(sat) @ IC/IB = 10 20 1 10 100 IC, COLLECTOR CURRENT (mA) 1000 0 1 Figure 3. Current-Gain -- Bandwidth Product 10 100 IC, COLLECTOR CURRENT (mA) Figure 4. "Saturation" and "On" Voltages -0.2 V, TEMPERATURE COEFFICIENTS (mV/C) f, T CURRENT-GAIN BANDWIDTH PRODUCT (MHz) Figure 1. Active Region Safe Operating Area 5 -1.0 VCE = 2 VOLTS T = 0C to +100C -1.6 -2.2 V for VBE 1 3 5 10 30 50 100 IC, COLLECTOR CURRENT (mA) 300 500 Figure 5. Temperature Coefficients http://onsemi.com 265 1000 1000 BC636, BC636-16, BC638, BC640, BC640-16 High Current Transistors PNP Silicon http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value VCEO BC636 BC638 BC640 Collector-Base Voltage BC636 BC638 BC640 1 EMITTER Vdc -45 -60 -80 VEBO -5.0 Vdc Collector Current -- Continuous IC -0.5 Adc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1 2 1.5 12 Watts mW/C TJ, Tstg -55 to +150 C Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W Operating and Storage Junction Temperature Range 3 BASE Vdc -45 -60 -80 VCBO Emitter-Base Voltage Unit 3 CASE 29 TO-92 STYLE 14 THERMAL CHARACTERISTICS Characteristic Semiconductor Components Industries, LLC, 2001 June, 2000 - Rev. 1 ORDERING INFORMATION 266 Device Package Shipping BC636 TO-92 5000 Units/Box BC636ZL1 TO-92 2000/Ammo Pack BC636-16ZL1 TO-92 2000/Ammo Pack BC638 TO-92 5000 Units/Box BC638ZL1 TO-92 2000/Ammo Pack BC640 TO-92 5000 Units/Box BC640ZL1 TO-92 2000/Ammo Pack BC640-16 TO-92 5000 Units/Box Publication Order Number: BC636/D BC636, BC636-16, BC638, BC640, BC640-16 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit -45 -60 -80 -- -- -- -- -- -- -45 -60 -80 -- -- -- -- -- -- -5.0 -- -- Vdc -- -- -- -- -100 -10 nAdc Adc 25 40 100 40 40 100 25 -- -- -- -- -- -- -- -- 250 250 160 160 250 -- OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = -10 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = -100 Adc, IE = 0) V(BR)CEO BC636 BC638 BC640 Vdc V(BR)CBO BC636 BC638 BC640 Emitter-Base Breakdown Voltage (IE = -10 Adc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = -30 Vdc, IE = 0) (VCB = -30 Vdc, IE = 0, TA = 125C) Vdc ICBO ON CHARACTERISTICS (1) DC Current Gain (IC = -5.0 mAdc, VCE = -2.0 Vdc) (IC = -150 mAdc, VCE = -2.0 Vdc) hFE BC636 BC636-16 BC638 BC640 BC640-16 (IC = -500 mA, VCE = -2.0 V) -- Collector-Emitter Saturation Voltage (IC = -500 mAdc, IB = -50 mAdc) VCE(sat) -- -- -0.25 -0.5 -0.5 -- Vdc Base-Emitter On Voltage (IC = -500 mAdc, VCE = -2.0 Vdc) VBE(on) -- -- -1.0 Vdc fT -- 150 -- MHz Output Capacitance (VCB = -10 Vdc, IE = 0, f = 1.0 MHz) Cob -- 9.0 -- pF Input Capacitance (VEB = -0.5 Vdc, IC = 0, f = 1.0 MHz) Cib -- 110 -- pF DYNAMIC CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = -50 mAdc, VCE = -2.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. http://onsemi.com 267 BC636, BC636-16, BC638, BC640, BC640-16 500 -1000 -200 -100 -50 VCE = -2 V SOA = 1S -B PD TA 25C hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (mA) -500 PD TC 25C -20 -10 -5 -2 -1 -1 BC636 BC638 BC640 PD TA 25C PD TC 25C 200 -A 50 20 -2 -3 -4 -5 -7 -10 -20 -30-40 -50 -70 -100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) -L 100 -1 -3 -5 -300 -500 -1000 Figure 2. DC Current Gain 500 -1 300 V, VOLTAGE (VOLTS) -0.8 VCE = -2 V 100 50 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = -2 V -0.6 -0.4 -0.2 VCE(sat) @ IC/IB = 10 20 -1 -10 -100 IC, COLLECTOR CURRENT (mA) -1000 0 -100 -10 IC, COLLECTOR CURRENT (mA) -1 Figure 3. Current Gain Bandwidth Product Figure 4. "Saturation" and "On" Voltages -0.2 V, TEMPERATURE COEFFICIENTS (mV/C) f, T CURRENT-GAIN BANDWIDTH PRODUCT (MHz) Figure 1. Active Region Safe Operating Area -10 -30 -50 -100 IC, COLLECTOR CURRENT (mA) -1.0 VCE = -2 VOLTS T = 0C to +100C -1.6 -2.2 V for VBE -1 -3 -5 -10 -30 -50 -100 IC, COLLECTOR CURRENT (mA) -300 -500 -1000 Figure 5. Temperature Coefficients http://onsemi.com 268 -1000 ON Semiconductor BC807-16LT1 BC807-25LT1 BC807-40LT1 General Purpose Transistors PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO -45 V Collector-Base Voltage VCBO -50 V Emitter-Base Voltage VEBO -5.0 V IC -500 mAdc Collector Current -- Continuous 3 1 2 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit 225 1.8 mW mW/C 556 C/W 300 2.4 mW mW/C RJA 417 C/W TJ, Tstg -55 to +150 C Total Device Dissipation FR-5 Board, (1) TA = 25C Derate above 25C PD Thermal Resistance, Junction to Ambient RJA Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature CASE 318-08, STYLE 6 SOT-23 (TO-236AB) COLLECTOR 3 PD 1 BASE DEVICE MARKING 2 EMITTER BC807-16LT1 = 5A; BC807-25LT1 = 5B; BC807-40LT1 = 5C ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (IC = -10 mA) V(BR)CEO -45 -- -- V Collector-Emitter Breakdown Voltage (VEB = 0, IC = -10 A) V(BR)CES -50 -- -- V Emitter-Base Breakdown Voltage (IE = -1.0 A) V(BR)EBO -5.0 -- -- V -- -- -- -- -100 -5.0 nA A OFF CHARACTERISTICS Collector Cutoff Current (VCB = -20 V) (VCB = -20 V, TJ = 150C) ICBO 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 3 269 Publication Order Number: BC807-16LT1/D BC807-16LT1 BC807-25LT1 BC807-40LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Characteristic Min Typ Max 100 160 250 40 -- -- -- -- 250 400 600 -- Unit ON CHARACTERISTICS DC Current Gain (IC = -100 mA, VCE = -1.0 V) hFE BC807-16 BC807-25 BC807-40 (IC = -500 mA, VCE = -1.0 V) -- Collector-Emitter Saturation Voltage (IC = -500 mA, IB = -50 mA) VCE(sat) -- -- -0.7 V Base-Emitter On Voltage (IC = -500 mA, IB = -1.0 V) VBE(on) -- -- -1.2 V fT 100 -- -- MHz Cobo -- 10 -- pF SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = -10 mA, VCE = -5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = -10 V, f = 1.0 MHz) 1000 hFE, DC CURRENT GAIN VCE = -1.0 V TA = 25C 100 10 -0.1 -1.0 -10 -100 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain http://onsemi.com 270 -1000 -1.0 -1.0 TA = 25C TJ = 25C -0.8 -0.8 V, VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) BC807-16LT1 BC807-25LT1 BC807-40LT1 IC = -500 mA -0.6 -0.4 IC = -300 mA -0.2 -1.0 -10 IB, BASE CURRENT (mA) -0.4 VCE(sat) @ IC/IB = 10 IC = -10 mA -0.1 VBE(on) @ VCE = -1.0 V -0.6 -0.2 IC = -100 mA 0 -0.01 0 -1.0 -100 VC for VCE(sat) -1.0 -1.0 -1000 100 +1.0 -2.0 -10 -100 IC, COLLECTOR CURRENT (mA) Figure 3. "On" Voltages C, CAPACITANCE (pF) V, TEMPERATURE COEFFICIENTS (mV/C) Figure 2. Saturation Region 0 VBE(sat) @ IC/IB = 10 VB for VBE -10 -100 IC, COLLECTOR CURRENT Cib 10 Cob 1.0 -0.1 -1000 Figure 4. Temperature Coefficients -1.0 -10 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Capacitances http://onsemi.com 271 -100 ON Semiconductor BC817-16LT1 BC817-25LT1 BC817-40LT1 General Purpose Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 45 V Collector-Base Voltage VCBO 50 V Emitter-Base Voltage VEBO 5.0 V IC 500 mAdc Collector Current -- Continuous 3 1 2 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit 225 1.8 mW mW/C 556 C/W 300 2.4 mW mW/C RJA 417 C/W TJ, Tstg -55 to +150 C Total Device Dissipation FR-5 Board, (1) TA = 25C Derate above 25C PD Thermal Resistance, Junction to Ambient RJA Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature CASE 318-08, STYLE 6 SOT-23 (TO-236AB) COLLECTOR 3 PD 1 BASE DEVICE MARKING 2 EMITTER BC817-16LT1 = 6A; BC817-25LT1 = 6B; BC817-40LT1 = 6C ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (IC = -10 mA) V(BR)CEO 45 -- -- V Collector-Emitter Breakdown Voltage (VEB = 0, IC = -10 A) V(BR)CES 50 -- -- V Emitter-Base Breakdown Voltage (IE = -1.0 A) V(BR)EBO 5.0 -- -- V -- -- -- -- 100 5.0 nA A OFF CHARACTERISTICS Collector Cutoff Current (VCB = 20 V) (VCB = 20 V, TA = 150C) ICBO 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 3 272 Publication Order Number: BC817-16LT1/D BC817-16LT1 BC817-25LT1 BC817-40LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Characteristic Min Typ Max 100 160 250 40 -- -- -- -- 250 400 600 -- Unit ON CHARACTERISTICS DC Current Gain (IC = 100 mA, VCE = 1.0 V) hFE -- BC817-16 BC817-25 BC817-40 (IC = 500 mA, VCE = 1.0 V) Collector-Emitter Saturation Voltage (IC = 500 mA, IB = 50 mA) VCE(sat) -- -- 0.7 V Base-Emitter On Voltage (IC = 500 mA, VCE = 1.0 V) VBE(on) -- -- 1.2 V fT 100 -- -- MHz Cobo -- 10 -- pF SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) hFE, DC CURRENT GAIN 1000 VCE = 1 V TJ = 25C 100 10 0.1 1.0 10 100 IC, COLLECTOR CURRENT (AMP) Figure 1. DC Current Gain http://onsemi.com 273 1000 1.0 1.0 TJ = 25C TA = 25C 0.8 0.8 V, VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) BC817-16LT1 BC817-25LT1 BC817-40LT1 0.6 IC = 10 mA 0.4 100 mA 300 mA 500 mA VBE(on) @ VCE = 1 V 0.6 0.4 0.2 0.2 VCE(sat) @ IC/IB = 10 0 0.01 0.1 1 IB, BASE CURRENT (mA) 10 0 100 1 Figure 2. Saturation Region 10 100 IC, COLLECTOR CURRENT (mA) 1000 Figure 3. "On" Voltages 100 +1 VC for VCE(sat) 0 C, CAPACITANCE (pF) V, TEMPERATURE COEFFICIENTS (mV/C) VBE(sat) @ IC/IB = 10 -1 VB for VBE -2 1 10 100 IC, COLLECTOR CURRENT (mA) Cib 10 Cob 1 0.1 1000 Figure 4. Temperature Coefficients 1 10 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Capacitances http://onsemi.com 274 100 BC846ALT1 Series BC846, BC847 and BC848 are Preferred Devices General Purpose Transistors NPN Silicon * Moisture Sensitivity Level: 1 * ESD Rating - Human Body Model: >4000 V http://onsemi.com ESD Rating - Machine Model: >400 V COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage VCEO BC846 BC847, BC850 BC848, BC849 Collector-Base Voltage Vdc VCBO 80 50 30 BC846 BC847, BC850 BC848, BC849 6.0 6.0 5.0 mAdc Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board (Note 1.) TA = 25C Derate above 25C PD 225 mW THERMAL CHARACTERISTICS Thermal Resistance, Junction to Ambient (Note 2.) Junction and Storage Temperature Range MARKING DIAGRAM xx M 2 Vdc 100 Total Device Dissipation Alumina Substrate (Note 2.) TA = 25C Derate above 25C 3 1 IC Thermal Resistance, Junction to Ambient (Note 1.) 2 EMITTER Vdc VEBO Collector Current - Continuous 1 BASE Unit 65 45 30 BC846 BC847, BC850 BC848, BC849 Emitter-Base Voltage Value xx SOT-23 CASE 318 STYLE 6 M = Device Code = (See Table) = Date Code ORDERING INFORMATION Device Package Shipping BC846ALT1 SOT-23 3000/Tape & Reel BC846ALT3 SOT-23 10,000/Tape & Reel BC846BLT1 SOT-23 3000/Tape & Reel BC846BLT3 SOT-23 10,000/Tape & Reel BC847ALT1 SOT-23 3000/Tape & Reel 1.8 mW/C RJA 556 C/W PD 300 mW BC847BLT1 SOT-23 3000/Tape & Reel 2.4 mW/C BC847CLT1 SOT-23 3000/Tape & Reel RJA 417 C/W BC847CLT3 SOT-23 10,000/Tape & Reel TJ, Tstg -55 to +150 C BC848ALT1 SOT-23 3000/Tape & Reel BC848BLT1 SOT-23 3000/Tape & Reel BC848BLT3 SOT-23 10,000/Tape & Reel BC848CLT1 SOT-23 3000/Tape & Reel BC849BLT1 SOT-23 3000/Tape & Reel BC849CLT1 SOT-23 3000/Tape & Reel BC850BLT1 SOT-23 3000/Tape & Reel BC850CLT1 SOT-23 3000/Tape & Reel DEVICE MARKING BC846ALT1 = 1A; BC846BLT1 = 1B; BC847ALT1 = 1E; BC847BLT1 = 1F; BC847CLT1 = 1G; BC848ALT1 = 1J; BC848BLT1 = 1K; BC848CLT1 = 1L; BC849BLT1 = 2B; BC849CLT1 = 2C; BC850BLT1 = 2F; BC850CLT1 = 2G 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 September, 2001 - Rev. 4 275 Publication Order Number: BC846ALT1/D BC846ALT1 Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage BC846A,B BC847A,B,C, BC850B,C (IC = 10 mA) BC848A,B,C, BC849B,C V(BR)CEO 65 45 30 - - - - - - V Collector-Emitter Breakdown Voltage BC846A,B (IC = 10 A, VEB = 0) BC847A,B,C BC850B,C BC848A,B,C, BC849B,C V(BR)CES 80 50 30 - - - - - - V Collector-Base Breakdown Voltage (IC = 10 A) BC846A,B BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C V(BR)CBO 80 50 30 - - - - - - V Emitter-Base Breakdown Voltage (IE = 1.0 A) BC846A,B BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C V(BR)EBO 6.0 6.0 5.0 - - - - - - V ICBO - - - - 15 5.0 nA A hFE - - - 90 150 270 - - - - 110 200 180 290 220 450 420 520 800 OFF CHARACTERISTICS Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150C) ON CHARACTERISTICS DC Current Gain (IC = 10 A, VCE = 5.0 V) (IC = 2.0 mA, VCE = 5.0 V) BC846A, BC847A, BC848A BC846B, BC847B, BC848B BC847C, BC848C BC846A, BC847A, BC848A BC846B, BC847B, BC848B, BC849B, BC850B BC847C, BC848C, BC849C, BC850C Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Collector-Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VCE(sat) - - - - 0.25 0.6 V Base-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Base-Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VBE(sat) - - 0.7 0.9 - - V Base-Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) Base-Emitter Voltage (IC = 10 mA, VCE = 5.0 V) VBE(on) 580 - 660 - 700 770 mV fT 100 - - MHz Cobo - - 4.5 pF - - - - 10 4.0 SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz) NF BC846A,B, BC847A,B,C, BC848A,B,C BC849B,C, BC850B,C Figure 6. http://onsemi.com 276 dB BC846ALT1 Series BC847, BC848, BC849, BC850 1.0 VCE = 10 V TA = 25C 1.5 TA = 25C 0.9 0.8 1.0 0.8 0.6 0.4 VBE(sat) @ IC/IB = 10 0.7 V, VOLTAGE (VOLTS) hFE , NORMALIZED DC CURRENT GAIN 2.0 VBE(on) @ VCE = 10 V 0.6 0.5 0.4 0.3 0.2 0.3 VCE(sat) @ IC/IB = 10 0.1 0.2 0.2 0.5 50 2.0 5.0 10 1.0 20 IC, COLLECTOR CURRENT (mAdc) 100 0 0.1 200 2.0 TA = 25C 1.6 IC = 200 mA 1.2 IC = IC = 10 mA 20 mA 0.8 IC = 50 mA IC = 100 mA 0.4 0 0.02 10 0.1 1.0 IB, BASE CURRENT (mA) 1.0 -55C to +125C 1.2 1.6 2.0 2.4 2.8 20 Cib Cob 2.0 0.4 0.6 0.8 1.0 4.0 6.0 8.0 10 2.0 VR, REVERSE VOLTAGE (VOLTS) 20 40 f, T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) C, CAPACITANCE (pF) TA = 25C 3.0 1.0 100 Figure 4. Base-Emitter Temperature Coefficient 10 5.0 10 1.0 IC, COLLECTOR CURRENT (mA) 0.2 Figure 3. Collector Saturation Region 7.0 50 70 100 Figure 2. "Saturation" and "On" Voltages VB, TEMPERATURE COEFFICIENT (mV/ C) VCE , COLLECTOR-EMITTER VOLTAGE (V) Figure 1. Normalized DC Current Gain 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) Figure 5. Capacitances 400 300 200 VCE = 10 V TA = 25C 100 80 60 40 30 20 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 30 Figure 6. Current-Gain - Bandwidth Product http://onsemi.com 277 50 BC846ALT1 Series BC846 TA = 25C VCE = 5 V TA = 25C 0.8 V, VOLTAGE (VOLTS) hFE , DC CURRENT GAIN (NORMALIZED) 1.0 2.0 1.0 0.5 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 5.0 V 0.4 0.2 0.2 VCE(sat) @ IC/IB = 10 0 10 100 1.0 IC, COLLECTOR CURRENT (mA) 0.1 0.2 0.5 0.2 1.0 2.0 TA = 25C 1.6 20 mA 50 mA 100 mA 200 mA 1.2 IC = 10 mA 0.8 0.4 0 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 5.0 10 20 Cib 10 6.0 Cob 0.1 0.2 0.5 1.0 2.0 10 20 5.0 VR, REVERSE VOLTAGE (VOLTS) 50 100 200 -1.4 -1.8 50 VB for VBE -55C to 125C -2.2 -2.6 -3.0 f, T CURRENT-GAIN - BANDWIDTH PRODUCT C, CAPACITANCE (pF) TA = 25C 2.0 200 0.5 0.2 10 20 5.0 1.0 2.0 IC, COLLECTOR CURRENT (mA) Figure 10. Base-Emitter Temperature Coefficient 40 4.0 100 -1.0 Figure 9. Collector Saturation Region 20 50 Figure 8. "On" Voltage VB, TEMPERATURE COEFFICIENT (mV/ C) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. DC Current Gain 10 20 2.0 5.0 IC, COLLECTOR CURRENT (mA) VCE = 5 V TA = 25C 500 200 100 50 20 1.0 5.0 10 50 100 IC, COLLECTOR CURRENT (mA) 100 Figure 11. Capacitance Figure 12. Current-Gain - Bandwidth Product http://onsemi.com 278 ON Semiconductor BC846AWT1 Series, BC847AWT1 Series, BC848AWT1 Series General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT-323/SC-70 which is designed for low power surface mount applications. MAXIMUM RATINGS Rating Symbol BC846 BC847 BC848 Unit Collector-Emitter Voltage VCEO 65 45 30 V Collector-Base Voltage VCBO 80 50 30 V Emitter-Base Voltage VEBO 6.0 6.0 5.0 V IC 100 100 100 mAdc Collector Current -- Continuous 3 1 2 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board, (1) TA = 25C PD 150 mW Thermal Resistance, Junction to Ambient RJA 833 C/W PD 2.4 mW/C TJ, Tstg -55 to +150 C Total Device Dissipation Junction and Storage Temperature CASE 419-02, STYLE 3 SOT-323/SC-70 COLLECTOR 3 1 BASE DEVICE MARKING BC846AWT1 = 1A; BC846BWT1 = 1B; BC847AWT1 = 1E; BC847BWT1 = 1F; BC847CWT1 = 1G; BC848AWT1 = 1J; BC848BWT1 = 1K; BC848CWT1 = 1L 2 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 10 mA) BC846 Series BC847 Series BC848 Series V(BR)CEO 65 45 30 -- -- -- -- -- -- V Collector-Emitter Breakdown Voltage (IC = 10 A, VEB = 0) BC846 Series BC847 Series BC848 Series V(BR)CES 80 50 30 -- -- -- -- -- -- V Collector-Base Breakdown Voltage (IC = 10 A) BC846 Series BC847 Series BC848 Series V(BR)CBO 80 50 30 -- -- -- -- -- -- V Emitter-Base Breakdown Voltage (IE = 1.0 A) BC846 Series BC847 Series BC848 Series V(BR)EBO 6.0 6.0 5.0 -- -- -- -- -- -- V ICBO -- -- -- -- 15 5.0 nA A Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150C) 1. FR-5 = 1.0 x 0.75 x 0.062 in Semiconductor Components Industries, LLC, 2001 September, 2001 - Rev. 2 279 Publication Order Number: BC846AWT1/D BC846AWT1 Series, BC847AWT1 Series, BC848AWT1 Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit hFE -- -- -- 90 150 270 -- -- -- -- 110 200 420 180 290 520 220 450 800 ON CHARACTERISTICS DC Current Gain (IC = 10 A, VCE = 5.0 V) (IC = 2.0 mA, VCE = 5.0 V) BC846A, BC847A, BC848A BC846B, BC847B, BC848B BC847C, BC848C BC846A, BC847A, BC848A BC846B, BC847B, BC848B BC847C, BC848C Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Collector-Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VCE(sat) -- -- -- -- 0.25 0.6 V Base-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Base-Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VBE(sat) -- -- 0.7 0.9 -- -- V Base-Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) Base-Emitter Voltage (IC = 10 mA, VCE = 5.0 V) VBE(on) 580 -- 660 -- 700 770 mV fT 100 -- -- MHz Cobo -- -- 4.5 pF NF -- -- 10 dB SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz) Figure 13. http://onsemi.com 280 BC846AWT1 Series, BC847AWT1 Series, BC848AWT1 Series BC847 SERIES & BC848 SERIES 1.0 VCE = 10 V TA = 25C 1.5 TA = 25C 0.9 0.8 1.0 V, VOLTAGE (VOLTS) hFE , NORMALIZED DC CURRENT GAIN 2.0 0.8 0.6 0.4 VBE(sat) @ IC/IB = 10 0.7 VBE(on) @ VCE = 10 V 0.6 0.5 0.4 0.3 0.2 0.3 VCE(sat) @ IC/IB = 10 0.1 0.2 0.2 0.5 50 1.0 20 2.0 5.0 10 IC, COLLECTOR CURRENT (mAdc) 100 0 0.1 200 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) Figure 2. "Saturation" and "On" Voltages 2.0 VB, TEMPERATURE COEFFICIENT (mV/ C) VCE , COLLECTOR-EMITTER VOLTAGE (V) Figure 1. Normalized DC Current Gain TA = 25C 1.6 IC = 200 mA 1.2 IC = IC = 10 mA 20 mA 0.8 IC = 50 mA IC = 100 mA 0.4 0 0.02 10 0.1 1.0 IB, BASE CURRENT (mA) 20 1.0 -55C to +125C 1.2 1.6 2.0 2.4 2.8 Cib Cob 2.0 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 40 f, T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) C, CAPACITANCE (pF) TA = 25C 3.0 1.0 100 Figure 4. Base-Emitter Temperature Coefficient 10 5.0 10 1.0 IC, COLLECTOR CURRENT (mA) 0.2 Figure 3. Collector Saturation Region 7.0 50 70 100 Figure 5. Capacitances 400 300 200 VCE = 10 V TA = 25C 100 80 60 40 30 20 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 30 Figure 6. Current-Gain - Bandwidth Product http://onsemi.com 281 50 BC846AWT1 Series, BC847AWT1 Series, BC848AWT1 Series BC846 SERIES TA = 25C VCE = 5 V TA = 25C 0.8 V, VOLTAGE (VOLTS) hFE , DC CURRENT GAIN (NORMALIZED) 1.0 2.0 1.0 0.5 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 5.0 V 0.4 0.2 0.2 VCE(sat) @ IC/IB = 10 0 10 100 1.0 IC, COLLECTOR CURRENT (mA) 0.1 0.2 0.2 0.5 1.0 2.0 TA = 25C 1.6 20 mA 50 mA 100 mA 200 mA 1.2 IC = 10 mA 0.8 0.4 0 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 5.0 10 20 f, T CURRENT-GAIN - BANDWIDTH PRODUCT C, CAPACITANCE (pF) TA = 25C Cib 10 6.0 2.0 Cob 0.1 0.2 0.5 5.0 1.0 2.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 200 50 100 200 -1.4 -1.8 50 VB for VBE -55C to 125C -2.2 -2.6 -3.0 0.2 0.5 10 20 1.0 2.0 5.0 IC, COLLECTOR CURRENT (mA) Figure 10. Base-Emitter Temperature Coefficient 40 4.0 100 -1.0 Figure 9. Collector Saturation Region 20 50 Figure 8. "On" Voltage VB, TEMPERATURE COEFFICIENT (mV/ C) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. DC Current Gain 10 20 2.0 5.0 IC, COLLECTOR CURRENT (mA) VCE = 5 V TA = 25C 500 200 100 50 20 1.0 5.0 10 50 100 IC, COLLECTOR CURRENT (mA) 100 Figure 11. Capacitance Figure 12. Current-Gain - Bandwidth Product http://onsemi.com 282 BC846BDW1T1, BC847BDW1T1 Series, BC848BDW1T1 Series Dual General Purpose Transistors http://onsemi.com NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications. * Device Marking: BC846BDW1T1 = 1B BC847BDW1T1 = 1F BC847CDW1T1 = 1G BC848BDW1T1 = 1K BC848CDW1T1 = 1L (3) (2) (1) Q2 Q1 (4) (5) (6) 6 5 4 MAXIMUM RATINGS 1 Rating Symbol BC846 BC847 BC848 Unit Collector-Emitter Voltage VCEO 65 45 30 V Collector-Base Voltage VCBO 80 50 30 V Emitter-Base Voltage VEBO 6.0 6.0 5.0 V IC 100 100 100 mAdc Collector Current - Continuous 2 3 SOT-363 CASE 419B STYLE 1 DEVICE MARKING THERMAL CHARACTERISTICS Characteristic Total Device Dissipation Per Device FR-5 Board (Note 1.) TA = 25C Derate Above 25C Symbol Max Unit PD 380 250 mW 3.0 mW/C Thermal Resistance, Junction to Ambient RJA 328 C/W Junction and Storage Temperature Range TJ, Tstg -55 to +150 C September, 2001 - Rev. 1 1x = Specific Device Code x1 = B, F, G, K, L ORDERING INFORMATION Device 1. FR-5 = 1.0 x 0.75 x 0.062 in Semiconductor Components Industries, LLC, 2001 1x 283 Package Shipping BC846BDW1T1 SOT-363 3000 Units/Reel BC847BDW1T1 SOT-363 3000 Units/Reel BC847CDW1T1 SOT-363 3000 Units/Reel BC848BDW1T1 SOT-363 3000 Units/Reel BC848CDW1T1 SOT-363 3000 Units/Reel Publication Order Number: BC846BDW1T1/D BC846BDW1T1, BC847BDW1T1 Series, BC848BDW1T1 Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max 65 45 30 - - - - - - 80 50 30 - - - - - - 80 50 30 - - - - - - 6.0 6.0 5.0 - - - - - - - - - - 15 5.0 BC846B, BC847B, BC848B BC847C, BC848C - - 150 270 - - BC846B, BC847B, BC848B BC847C, BC848C 200 420 290 520 450 800 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 10 mA) Collector-Emitter Breakdown Voltage (IC = 10 A, VEB = 0) Collector-Base Breakdown Voltage (IC = 10 A) Emitter-Base Breakdown Voltage (IE = 1.0 A) V(BR)CEO BC846 Series BC847 Series BC848 Series V V(BR)CES BC846 Series BC847 Series BC848 Series V V(BR)CBO BC846 Series BC847 Series BC848 Series V V(BR)EBO BC846 Series BC847 Series BC848 Series Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150C) ICBO V nA A ON CHARACTERISTICS DC Current Gain (IC = 10 A, VCE = 5.0 V) (IC = 2.0 mA, VCE = 5.0 V) hFE - Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Collector-Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VCE(sat) - - - - 0.25 0.6 V Base-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Base-Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VBE(sat) - - 0.7 0.9 - - V Base-Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) Base-Emitter Voltage (IC = 10 mA, VCE = 5.0 V) VBE(on) 580 - 660 - 700 770 mV fT 100 - - MHz Cobo - - 4.5 pF - - 10 SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 k,f = 1.0 kHz, BW = 200 Hz) http://onsemi.com 284 NF dB BC846BDW1T1, BC847BDW1T1 Series, BC848BDW1T1 Series TYPICAL CHARACTERISTICS - BC847 SERIES & BC848 SERIES 1.0 VCE = 10 V TA = 25C 1.5 TA = 25C 0.9 0.8 1.0 V, VOLTAGE (VOLTS) hFE , NORMALIZED DC CURRENT GAIN 2.0 0.8 0.6 0.4 VBE(sat) @ IC/IB = 10 0.7 VBE(on) @ VCE = 10 V 0.6 0.5 0.4 0.3 0.2 0.3 VCE(sat) @ IC/IB = 10 0.1 0.2 0.2 0.5 50 2.0 5.0 10 1.0 20 IC, COLLECTOR CURRENT (mAdc) 100 0 0.1 200 2.0 TA = 25C 1.6 IC = 200 mA 1.2 IC = IC = 10 mA 20 mA 0.8 IC = 50 mA IC = 100 mA 0.4 0 0.02 10 0.1 1.0 IB, BASE CURRENT (mA) 20 1.0 -55C to +125C 1.2 1.6 2.0 2.4 2.8 Cib Cob 2.0 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 40 f, T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) C, CAPACITANCE (pF) TA = 25C 3.0 1.0 100 Figure 4. Base-Emitter Temperature Coefficient 10 5.0 10 1.0 IC, COLLECTOR CURRENT (mA) 0.2 Figure 3. Collector Saturation Region 7.0 50 70 100 Figure 2. "Saturation" and "On" Voltages VB, TEMPERATURE COEFFICIENT (mV/ C) VCE , COLLECTOR-EMITTER VOLTAGE (V) Figure 1. Normalized DC Current Gain 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) 400 300 200 VCE = 10 V TA = 25C 100 80 60 40 30 20 0.5 0.7 Figure 5. Capacitances 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 30 Figure 6. Current-Gain - Bandwidth Product http://onsemi.com 285 50 BC846BDW1T1, BC847BDW1T1 Series, BC848BDW1T1 Series TYPICAL CHARACTERISTICS - BC846 SERIES TA = 25C VCE = 5 V TA = 25C 0.8 VBE(sat) @ IC/IB = 10 V, VOLTAGE (VOLTS) hFE , DC CURRENT GAIN (NORMALIZED) 1.0 2.0 1.0 0.5 0.6 VBE @ VCE = 5.0 V 0.4 0.2 0.2 VCE(sat) @ IC/IB = 10 0 10 100 1.0 IC, COLLECTOR CURRENT (mA) 0.1 0.2 0.2 0.5 1.0 2.0 TA = 25C 1.6 20 mA 50 mA 100 mA 200 mA 1.2 IC = 10 mA 0.8 0.4 0 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 5.0 10 20 Cib 10 6.0 Cob 0.1 0.2 0.5 1.0 2.0 10 20 5.0 VR, REVERSE VOLTAGE (VOLTS) 50 50 100 200 -1.4 -1.8 VB for VBE -55C to 125C -2.2 -2.6 -3.0 f, T CURRENT-GAIN - BANDWIDTH PRODUCT C, CAPACITANCE (pF) TA = 25C 2.0 200 0.2 0.5 10 20 5.0 1.0 2.0 IC, COLLECTOR CURRENT (mA) Figure 10. Base-Emitter Temperature Coefficient 40 4.0 100 -1.0 Figure 9. Collector Saturation Region 20 50 Figure 8. "On" Voltage VB, TEMPERATURE COEFFICIENT (mV/ C) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. Normalized DC Current Gain 10 20 2.0 5.0 IC, COLLECTOR CURRENT (mA) 500 VCE = 5 V TA = 25C 200 100 50 20 1.0 5.0 10 50 100 IC, COLLECTOR CURRENT (mA) 100 Figure 11. Capacitance Figure 12. Current-Gain - Bandwidth Product http://onsemi.com 286 BC846BDW1T1, BC847BDW1T1 Series, BC848BDW1T1 Series r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 ZJA(t) = r(t) RJA RJA = 328 C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) P(pk) t1 0.01 t2 DUTY CYCLE, D = t1/t2 0.001 SINGLE PULSE 0 10 1.0 100 t, TIME (ms) 1.0k 10k 100k 1.0M Figure 13. Thermal Response -200 1s IC, COLLECTOR CURRENT (mA) -100 -50 -10 -5.0 -2.0 -1.0 TA = 25C The safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 14 is based upon TJ(pk) = 150C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) 150C. T J(pk) may be calculated from the data in Figure 13. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. 3 ms TJ = 25C BC558 BC557 BC556 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT -5.0 -10 -30 -45 -65 -100 VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 14. Active Region Safe Operating Area http://onsemi.com 287 BC846BPDW1T1, BC847BPDW1T1 Series, BC848BPDW1T1 Series Dual General Purpose Transistors http://onsemi.com NPN/PNP Duals (Complimentary) These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications. * Device Marking: (3) (2) Q2 Q1 BC846BPDW1T1 = BB BC847BPDW1T1 = 13F BC847CPDW1T1 = 13G BC848BPDW1T1 = 13K BC848CPDW1T1 = 13L (4) (5) (6) 6 5 MAXIMUM RATINGS - NPN Rating Symbol BC846 BC847 BC848 Unit Collector-Emitter Voltage VCEO 65 45 30 V Collector-Base Voltage VCBO 80 50 30 V Emitter-Base Voltage VEBO 6.0 6.0 5.0 V IC 100 100 100 mAdc Symbol BC846 BC847 BC848 Unit Collector-Emitter Voltage VCEO -65 -45 -30 V Collector-Base Voltage VCBO -80 -50 -30 V Emitter-Base Voltage VEBO -5.0 -5.0 -5.0 V IC -100 -100 -100 mAdc Collector Current -- Continuous 1 Collector Current -- Continuous 2 4 3 SOT-363/SC-88 CASE 419B STYLE 1 MAXIMUM RATINGS - PNP Rating (1) DEVICE MARKING See Table THERMAL CHARACTERISTICS Characteristic Total Device Dissipation Per Device FR-5 Board (1) TA = 25C Derate Above 25C Symbol Max Unit PD 380 250 mW 3.0 mW/C 328 C/W Thermal Resistance, Junction to Ambient RJA Junction and Storage Temperature Range TJ, Tstg C -55 to +150 ORDERING INFORMATION Device Package Shipping BC846BPDW1T1 SOT-363 3000 Units/Reel BC847BPDW1T1 SOT-363 3000 Units/Reel BC847CPDW1T1 SOT-363 3000 Units/Reel BC848BPDW1T1 SOT-363 3000 Units/Reel BC848CPDW1T1 SOT-363 3000 Units/Reel 1. FR-5 = 1.0 x 0.75 x 0.062 in Semiconductor Components Industries, LLC, 2001 September, 2001 - Rev. 1 288 Publication Order Number: BC846BPDW1T1/D BC846BPDW1T1, BC847BPDW1T1 Series, BC848BPDW1T1 Series ELECTRICAL CHARACTERISTICS (NPN) (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max 65 45 30 -- -- -- -- -- -- 80 50 30 -- -- -- -- -- -- 80 50 30 -- -- -- -- -- -- 6.0 6.0 5.0 -- -- -- -- -- -- -- -- -- -- 15 5.0 BC846B, BC847B, BC848B BC847C, BC848C -- -- 150 270 -- -- BC846B, BC847B, BC848B BC847C, BC848C 200 420 290 520 475 800 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 10 mA) Collector-Emitter Breakdown Voltage (IC = 10 A, VEB = 0) Collector-Base Breakdown Voltage (IC = 10 A) Emitter-Base Breakdown Voltage (IE = 1.0 A) V(BR)CEO BC846 Series BC847 Series BC848 Series V V(BR)CES BC846 Series BC847B Only BC848 Series V V(BR)CBO BC846 Series BC847 Series BC848 Series V V(BR)EBO BC846 Series BC847 Series BC848 Series Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150C) ICBO V nA A ON CHARACTERISTICS DC Current Gain (IC = 10 A, VCE = 5.0 V) (IC = 2.0 mA, VCE = 5.0 V) hFE -- Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Collector-Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VCE(sat) -- -- -- -- 0.25 0.6 V Base-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Base-Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VBE(sat) -- -- 0.7 0.9 -- -- V Base-Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) Base-Emitter Voltage (IC = 10 mA, VCE = 5.0 V) VBE(on) 580 -- 660 -- 700 770 mV fT 100 -- -- MHz Cobo -- -- 4.5 pF -- -- 10 SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz) http://onsemi.com 289 NF dB BC846BPDW1T1, BC847BPDW1T1 Series, BC848BPDW1T1 Series ELECTRICAL CHARACTERISTICS (PNP) (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit -65 -45 -30 -- -- -- -- -- -- -80 -50 -30 -- -- -- -- -- -- -80 -50 -30 -- -- -- -- -- -- -5.0 -5.0 -5.0 -- -- -- -- -- -- -- -- -- -- -15 -4.0 BC846B, BC847B, BC848B BC847C, BC848C -- -- 150 270 -- -- BC846B, BC847B, BC848B BC847C, BC848C 200 420 290 520 475 800 -- -- -- -- -0.3 -0.65 -- -- -0.7 -0.9 -- -- -0.6 -- -- -- -0.75 -0.82 fT 100 -- -- MHz Output Capacitance (VCB = -10 V, f = 1.0 MHz) Cob -- -- 4.5 pF Noise Figure (IC = -0.2 mA, VCE = -5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz) NF -- -- 10 dB OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = -10 mA) Collector-Emitter Breakdown Voltage (IC = -10 A, VEB = 0) Collector-Base Breakdown Voltage (IC = -10 A) Emitter-Base Breakdown Voltage (IE = -1.0 A) V(BR)CEO BC846 Series BC847 Series BC848 Series V V(BR)CES BC846 Series BC847 Series BC848 Series V V(BR)CBO BC846 Series BC847 Series BC848 Series V V(BR)EBO BC846 Series BC847 Series BC848 Series Collector Cutoff Current (VCB = -30 V) Collector Cutoff Current (VCB = -30 V, TA = 150C) ICBO V nA A ON CHARACTERISTICS DC Current Gain (IC = -10 A, VCE = -5.0 V) (IC = -2.0 mA, VCE = -5.0 V) hFE Collector-Emitter Saturation Voltage (IC = -10 mA, IB = -0.5 mA) (IC = -100 mA, IB = -5.0 mA) VCE(sat) Base-Emitter Saturation Voltage (IC = -10 mA, IB = -0.5 mA) (IC = -100 mA, IB = -5.0 mA) VBE(sat) Base-Emitter On Voltage (IC = -2.0 mA, VCE = -5.0 V) (IC = -10 mA, VCE = -5.0 V) VBE(on) -- V V V SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = -10 mA, VCE = -5.0 Vdc, f = 100 MHz) http://onsemi.com 290 BC846BPDW1T1, BC847BPDW1T1 Series, BC848BPDW1T1 Series TYPICAL NPN CHARACTERISTICS - BC846 TA = 25C VCE = 5 V TA = 25C 0.8 V, VOLTAGE (VOLTS) hFE , DC CURRENT GAIN (NORMALIZED) 1.0 2.0 1.0 0.5 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 5.0 V 0.4 0.2 0.2 VCE(sat) @ IC/IB = 10 0 10 100 1.0 IC, COLLECTOR CURRENT (mA) 0.1 0.2 0.2 0.5 2.0 TA = 25C 1.6 20 mA 50 mA 100 mA 200 mA 1.2 IC = 10 mA 0.8 0.4 0 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 5.0 10 20 f, T CURRENT-GAIN - BANDWIDTH PRODUCT C, CAPACITANCE (pF) TA = 25C Cib 10 6.0 2.0 Cob 0.1 0.2 0.5 1.0 2.0 10 20 5.0 VR, REVERSE VOLTAGE (VOLTS) 100 200 50 100 200 -1.4 -1.8 50 VB for VBE -55C to 125C -2.2 -2.6 -3.0 0.2 0.5 10 20 1.0 2.0 5.0 IC, COLLECTOR CURRENT (mA) Figure 4. Base-Emitter Temperature Coefficient 40 4.0 50 -1.0 Figure 3. Collector Saturation Region 20 10 20 2.0 5.0 IC, COLLECTOR CURRENT (mA) Figure 2. "On" Voltage VB, TEMPERATURE COEFFICIENT (mV/ C) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain 1.0 VCE = 5 V TA = 25C 500 200 100 50 20 1.0 5.0 10 50 100 IC, COLLECTOR CURRENT (mA) 100 Figure 5. Capacitance Figure 6. Current-Gain - Bandwidth Product http://onsemi.com 291 BC846BPDW1T1, BC847BPDW1T1 Series, BC848BPDW1T1 Series TYPICAL PNP CHARACTERISTICS -- BC846 TJ = 25C VCE = -5.0 V TA = 25C -0.8 V, VOLTAGE (VOLTS) hFE , DC CURRENT GAIN (NORMALIZED) -1.0 2.0 1.0 0.5 VBE(sat) @ IC/IB = 10 -0.6 VBE @ VCE = -5.0 V -0.4 -0.2 0.2 VCE(sat) @ IC/IB = 10 0 -0.2 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (AMP) -0.1 -0.2 -0.5 -50 -100 -200 -5.0 -10 -20 -1.0 -2.0 IC, COLLECTOR CURRENT (mA) Figure 8. "On" Voltage -2.0 -1.6 -1.2 IC = -10 mA -20 mA -50 mA -100 mA -200 mA -0.8 -0.4 TJ = 25C 0 -0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 IB, BASE CURRENT (mA) -5.0 -10 VB, TEMPERATURE COEFFICIENT (mV/ C) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. DC Current Gain -20 -1.0 -1.4 -1.8 -2.6 -3.0 -0.2 20 Cib 10 8.0 6.0 Cob 4.0 2.0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 VR, REVERSE VOLTAGE (VOLTS) -0.5 -1.0 -50 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mA) -100 -200 Figure 10. Base-Emitter Temperature Coefficient f, T CURRENT-GAIN - BANDWIDTH PRODUCT C, CAPACITANCE (pF) TJ = 25C -55C to 125C -2.2 Figure 9. Collector Saturation Region 40 VB for VBE VCE = -5.0 V 500 200 100 50 20 -100 -1.0 -10 IC, COLLECTOR CURRENT (mA) -50 -100 Figure 11. Capacitance Figure 12. Current-Gain - Bandwidth Product http://onsemi.com 292 BC846BPDW1T1, BC847BPDW1T1 Series, BC848BPDW1T1 Series TYPICAL NPN CHARACTERISTICS - BC847 SERIES & BC848 SERIES 1.0 VCE = 10 V TA = 25C 1.5 TA = 25C 0.9 0.8 1.0 V, VOLTAGE (VOLTS) hFE , NORMALIZED DC CURRENT GAIN 2.0 0.8 0.6 0.4 VBE(sat) @ IC/IB = 10 0.7 VBE(on) @ VCE = 10 V 0.6 0.5 0.4 0.3 0.2 0.3 VCE(sat) @ IC/IB = 10 0.1 0.2 0.2 0.5 50 2.0 5.0 10 1.0 20 IC, COLLECTOR CURRENT (mAdc) 100 0 0.1 200 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) Figure 14. "Saturation" and "On" Voltages 2.0 VB, TEMPERATURE COEFFICIENT (mV/ C) VCE , COLLECTOR-EMITTER VOLTAGE (V) Figure 13. Normalized DC Current Gain TA = 25C 1.6 IC = 200 mA 1.2 IC = IC = 10 mA 20 mA 0.8 IC = 50 mA IC = 100 mA 0.4 0 0.02 10 0.1 1.0 IB, BASE CURRENT (mA) 20 1.0 -55C to +125C 1.2 1.6 2.0 2.4 2.8 Cib Cob 2.0 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 40 f, T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) C, CAPACITANCE (pF) TA = 25C 3.0 1.0 100 Figure 16. Base-Emitter Temperature Coefficient 10 5.0 10 1.0 IC, COLLECTOR CURRENT (mA) 0.2 Figure 15. Collector Saturation Region 7.0 50 70 100 Figure 17. Capacitances 400 300 200 VCE = 10 V TA = 25C 100 80 60 40 30 20 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 30 Figure 18. Current-Gain - Bandwidth Product http://onsemi.com 293 50 BC846BPDW1T1, BC847BPDW1T1 Series, BC848BPDW1T1 Series TYPICAL PNP CHARACTERISTICS -- BC847 SERIES & BC848 SERIES -1.0 1.5 TA = 25C -0.9 VCE = -10 V TA = 25C -0.8 1.0 V, VOLTAGE (VOLTS) hFE , NORMALIZED DC CURRENT GAIN 2.0 0.7 0.5 -0.7 VBE(on) @ VCE = -10 V -0.6 -0.5 -0.4 -0.3 -0.2 0.3 VCE(sat) @ IC/IB = 10 -0.1 0.2 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 IC, COLLECTOR CURRENT (mAdc) 0 -0.1 -0.2 -100 -200 TA = 25C -1.6 -1.2 IC = -10 mA IC = -50 mA IC = -200 mA IC = -100 mA IC = -20 mA -0.4 -0.02 -55C to +125C 1.2 1.6 2.0 2.4 2.8 -10 -20 -0.1 -1.0 IB, BASE CURRENT (mA) -0.2 10 Cib 7.0 TA = 25C 5.0 Cob 3.0 2.0 1.0 -0.4 -0.6 -1.0 -2.0 -4.0 -6.0 -10 -10 -1.0 IC, COLLECTOR CURRENT (mA) -100 Figure 22. Base-Emitter Temperature Coefficient -20 -30 -40 f, T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) Figure 21. Collector Saturation Region C, CAPACITANCE (pF) -100 -50 1.0 -2.0 0 -0.5 -1.0 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mAdc) Figure 20. "Saturation" and "On" Voltages VB , TEMPERATURE COEFFICIENT (mV/ C) VCE , COLLECTOR-EMITTER VOLTAGE (V) Figure 19. Normalized DC Current Gain -0.8 VBE(sat) @ IC/IB = 10 400 300 200 150 VCE = -10 V TA = 25C 100 80 60 40 30 20 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc) Figure 23. Capacitances Figure 24. Current-Gain - Bandwidth Product http://onsemi.com 294 BC846BPDW1T1, BC847BPDW1T1 Series, BC848BPDW1T1 Series r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 ZJA(t) = r(t) RJA RJA = 328 C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) P(pk) t1 0.01 t2 DUTY CYCLE, D = t1/t2 0.001 SINGLE PULSE 0 10 1.0 100 1.0k 10k 100k 1.0M t, TIME (ms) Figure 25. Thermal Response -200 1s IC, COLLECTOR CURRENT (mA) -100 -50 -10 -5.0 -2.0 -1.0 TA = 25C The safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 26 is based upon TJ(pk) = 150C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from the data in Figure 25. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. 3 ms TJ = 25C BC558 BC557 BC556 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT -5.0 -10 -30 -45 -65 -100 VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 26. Active Region Safe Operating Area http://onsemi.com 295 BC847BTT1, BC847CTT1 General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT-416/SC-75 package which is designed for low power surface mount applications. http://onsemi.com COLLECTOR 3 * Device Marking: BC847BTT1 = 1F BC847CTT1 = 1G 1 BASE 2 EMITTER MAXIMUM RATINGS (TA = 25C) Rating Symbol Max Unit Collector-Emitter Voltage VCEO 45 V Collector-Base Voltage VCBO 50 V Emitter-Base Voltage VEBO 6.0 V IC 100 mAdc Symbol Max Unit 200 mW 1.6 mW/C 600 C/W DEVICE MARKING 300 mW See Table 2.4 mW/C Collector Current - Continuous 3 2 1 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation, FR-4 Board (1) TA = 25C Derated above 25C PD Thermal Resistance, Junction to Ambient (1) RJA Total Device Dissipation, FR-4 Board (2) TA = 25C Derated above 25C PD Thermal Resistance, Junction to Ambient (2) RJA 400 C/W TJ, Tstg -55 to +150 C Junction and Storage Temperature Range ORDERING INFORMATION (1) FR-4 @ Minimum Pad (2) FR-4 @ 1.0 x 1.0 Inch Pad Semiconductor Components Industries, LLC, 2001 September, 2001 - Rev. 2 CASE 463 SOT-416/SC-75 STYLE 1 Device 296 Package Shipping BC847BTT1 SOT-416 3000 / Tape & Reel BC847CTT1 SOT-416 3000 / Tape & Reel Publication Order Number: BC847BTT1/D BC847BTT1, BC847CTT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max 45 -- -- 50 -- -- 50 -- -- 6.0 -- -- -- -- -- -- 15 5.0 BC847B BC847C -- -- 150 270 -- -- BC847B BC847C 200 420 290 520 450 800 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 10 mA) BC847 Series V(BR)CEO Collector-Emitter Breakdown Voltage (IC = 10 A, VEB = 0) BC847 Series Collector-Base Breakdown Voltage (IC = 10 A) BC847 Series Emitter-Base Breakdown Voltage (IE = 1.0 A) BC847 Series V V(BR)CES V V(BR)CBO V V(BR)EBO Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150C) ICBO V nA A ON CHARACTERISTICS DC Current Gain (IC = 10 A, VCE = 5.0 V) (IC = 2.0 mA, VCE = 5.0 V) hFE -- Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Collector-Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VCE(sat) -- -- -- -- 0.25 0.6 V Base-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Base-Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VBE(sat) -- -- 0.7 0.9 -- -- V Base-Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) Base-Emitter Voltage (IC = 10 mA, VCE = 5.0 V) VBE(on) 580 -- 660 -- 700 770 mV fT 100 -- -- MHz Cobo -- -- 4.5 SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz) http://onsemi.com 297 NF pF dB -- -- 10 BC847BTT1, BC847CTT1 1.0 VCE = 10 V TA = 25C 1.5 TA = 25C 0.9 0.8 1.0 0.8 0.6 0.4 VBE(sat) @ IC/IB = 10 0.7 V, VOLTAGE (VOLTS) hFE , NORMALIZED DC CURRENT GAIN 2.0 VBE(on) @ VCE = 10 V 0.6 0.5 0.4 0.3 0.2 0.3 VCE(sat) @ IC/IB = 10 0.1 0.2 0.2 0.5 50 1.0 20 2.0 5.0 10 IC, COLLECTOR CURRENT (mAdc) 100 0 0.1 200 2.0 TA = 25C 1.6 IC = 200 mA 1.2 IC = IC = 10 mA 20 mA 0.8 IC = 50 mA IC = 100 mA 0.4 0 0.02 10 0.1 1.0 IB, BASE CURRENT (mA) 1.0 -55C to +125C 1.2 1.6 2.0 2.4 2.8 20 r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE 0.1 10 1.0 IC, COLLECTOR CURRENT (mA) 0.2 Figure 3. Collector Saturation Region 1.0 50 70 100 Figure 2. "Saturation" and "On" Voltages VB, TEMPERATURE COEFFICIENT (mV/ C) VCE , COLLECTOR-EMITTER VOLTAGE (V) Figure 1. Normalized DC Current Gain 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) 100 Figure 4. Base-Emitter Temperature Coefficient D = 0.5 0.2 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 1.0 t, TIME (s) Figure 5. Normalized Thermal Response http://onsemi.com 298 10 100 1000 BC847BTT1, BC847CTT1 10 C, CAPACITANCE (pF) 7.0 TA = 25C 5.0 Cib 3.0 Cob 2.0 1.0 0.4 0.6 0.8 1.0 4.0 6.0 8.0 10 2.0 VR, REVERSE VOLTAGE (VOLTS) 20 40 f, T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) BC847 400 300 200 VCE = 10 V TA = 25C 100 80 60 40 30 20 0.5 0.7 Figure 6. Capacitances 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 30 Figure 7. Current-Gain - Bandwidth Product http://onsemi.com 299 50 BC856ALT1 Series Preferred Devices General Purpose Transistors PNP Silicon MAXIMUM RATINGS (TA = 25C unless otherwise noted) Symbol Value Unit Collector-Emitter Voltage VCEO -65 -45 -30 V Collector-Base Voltage VCBO -80 -50 -30 V Emitter-Base Voltage VEBO -5.0 V IC -100 mAdc Symbol Max Unit Rating BC856 BC857 BC858, BC859 BC856 BC857 BC858, BC859 Collector Current - Continuous http://onsemi.com COLLECTOR 3 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board, (Note 1.) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (Note 2.) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature MARKING DIAGRAM 3 PD RJA 225 1.8 mW mW/C 556 C/W PD RJA 300 2.4 mW mW/C 417 C/W 3 1 xx 2 SOT-23 CASE 318 STYLE 6 1 xx 2 = Device Code = (See Table Below) ORDERING INFORMATION TJ, Tstg -55 to +150 C 1. FR-5 = 1.0 x 0.75 x 0.062 in 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Device Package Mark Shipping BC856ALT1 SOT-23 3A 3000/Tape & Reel BC856BLT1 SOT-23 3B 3000/Tape & Reel BC857ALT1 SOT-23 3E 3000/Tape & Reel BC857BLT1 SOT-23 3F 3000/Tape & Reel BC858ALT1 SOT-23 3J 3000/Tape & Reel BC858BLT1 SOT-23 3K 3000/Tape & Reel BC858CLT1 SOT-23 3L 3000/Tape & Reel BC859BLT1 SOT-23 4B 3000/Tape & Reel BC859CLT1 SOT-23 4C 3000/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 January, 2001 - Rev. 2 300 Publication Order Number: BC856ALT1/D BC856ALT1 Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = -10 mA) BC856 Series BC857 Series BC858, BC859 Series V(BR)CEO -65 -45 -30 - - - - - - V Collector-Emitter Breakdown Voltage (IC = -10 A, VEB = 0) BC856 Series BC857 Series BC858, BC859 Series V(BR)CES -80 -50 -30 - - - - - - V Collector-Base Breakdown Voltage (IC = -10 A) BC856 Series BC857 Series BC858, BC859 Series V(BR)CBO -80 -50 -30 - - - - - - V Emitter-Base Breakdown Voltage (IE = -1.0 A) BC856 Series BC857 Series BC858, BC859 Series V(BR)EBO -5.0 -5.0 -5.0 - - - - - - V ICBO - - - - -15 -4.0 nA A hFE - - - 90 150 270 - - - - 125 220 420 180 290 520 250 475 800 - - - - -0.3 -0.65 - - -0.7 -0.9 - - -0.6 - - - -0.75 -0.82 fT 100 - - MHz Output Capacitance (VCB = -10 V, f = 1.0 MHz) Cob - - 4.5 pF Noise Figure (IC = -0.2 mA, VCE = -5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz) BC856, BC857, BC858 Series BC859 Series NF Collector Cutoff Current (VCB = -30 V) Collector Cutoff Current (VCB = -30 V, TA = 150C) ON CHARACTERISTICS DC Current Gain (IC = -10 A, VCE = -5.0 V) (IC = -2.0 mA, VCE = -5.0 V) BC856A, BC857A, BC858A BC856B, BC857B, BC858B BC858C BC856A, BC857A, BC858A BC856B, BC857B, BC858B, BC859B BC858C, BC859C Collector-Emitter Saturation Voltage (IC = -10 mA, IB = -0.5 mA) (IC = -100 mA, IB = -5.0 mA) VCE(sat) Base-Emitter Saturation Voltage (IC = -10 mA, IB = -0.5 mA) (IC = -100 mA, IB = -5.0 mA) VBE(sat) Base-Emitter On Voltage (IC = -2.0 mA, VCE = -5.0 V) (IC = -10 mA, VCE = -5.0 V) VBE(on) V V V SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (IC = -10 mA, VCE = -5.0 Vdc, f = 100 MHz) http://onsemi.com 301 dB - - - - 10 4.0 BC856ALT1 Series BC857/BC858/BC859 -1.0 1.5 TA = 25C -0.9 VCE = -10 V TA = 25C -0.8 1.0 V, VOLTAGE (VOLTS) hFE , NORMALIZED DC CURRENT GAIN 2.0 0.7 0.5 -0.7 VBE(on) @ VCE = -10 V -0.6 -0.5 -0.4 -0.3 -0.2 0.3 VCE(sat) @ IC/IB = 10 -0.1 0.2 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 IC, COLLECTOR CURRENT (mAdc) 0 -0.1 -0.2 -100 -200 TA = 25C -1.6 -1.2 IC = -10 mA IC = -50 mA IC = -200 mA IC = -100 mA IC = -20 mA -0.4 -0.02 1.6 2.0 2.4 2.8 -10 -20 -0.1 -1.0 IB, BASE CURRENT (mA) -0.2 TA = 25C 5.0 Cob 2.0 1.0 -0.4 -0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40 f, T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) Cib 3.0 -10 -1.0 IC, COLLECTOR CURRENT (mA) -100 Figure 4. Base-Emitter Temperature Coefficient 10 7.0 -55C to +125C 1.2 Figure 3. Collector Saturation Region C, CAPACITANCE (pF) -100 -50 1.0 -2.0 0 -0.5 -1.0 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mAdc) Figure 2. "Saturation" and "On" Voltages VB , TEMPERATURE COEFFICIENT (mV/ C) VCE , COLLECTOR-EMITTER VOLTAGE (V) Figure 1. Normalized DC Current Gain -0.8 VBE(sat) @ IC/IB = 10 400 300 200 150 VCE = -10 V TA = 25C 100 80 60 40 30 20 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc) Figure 5. Capacitances Figure 6. Current-Gain - Bandwidth Product http://onsemi.com 302 BC856ALT1 Series BC856 TJ = 25C VCE = -5.0 V TA = 25C -0.8 V, VOLTAGE (VOLTS) hFE , DC CURRENT GAIN (NORMALIZED) -1.0 2.0 1.0 0.5 VBE(sat) @ IC/IB = 10 -0.6 VBE @ VCE = -5.0 V -0.4 -0.2 0.2 VCE(sat) @ IC/IB = 10 0 -0.2 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) -0.1 -0.2 -0.5 -50 -100 -200 -5.0 -10 -20 -1.0 -2.0 IC, COLLECTOR CURRENT (mA) Figure 8. "On" Voltage -2.0 -1.6 -1.2 IC = -10 mA -20 mA -50 mA -100 mA -200 mA -0.8 -0.4 TJ = 25C 0 -0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 IB, BASE CURRENT (mA) -5.0 -10 VB, TEMPERATURE COEFFICIENT (mV/ C) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. DC Current Gain -20 -1.0 -1.4 -1.8 -2.6 -3.0 -0.2 20 Cib 10 8.0 6.0 Cob 4.0 2.0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 VR, REVERSE VOLTAGE (VOLTS) -0.5 -1.0 -50 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mA) -100 -200 Figure 10. Base-Emitter Temperature Coefficient f, T CURRENT-GAIN - BANDWIDTH PRODUCT C, CAPACITANCE (pF) TJ = 25C -55C to 125C -2.2 Figure 9. Collector Saturation Region 40 VB for VBE VCE = -5.0 V 500 200 100 50 20 -100 -1.0 -10 IC, COLLECTOR CURRENT (mA) -50 -100 Figure 11. Capacitance Figure 12. Current-Gain - Bandwidth Product http://onsemi.com 303 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) BC856ALT1 Series 1.0 0.7 0.5 0.3 D = 0.5 0.2 0.2 0.1 0.07 0.05 0.1 0.05 SINGLE PULSE SINGLE PULSE t1 t2 0.03 DUTY CYCLE, D = t1/t2 0.02 0.01 0.1 ZJC(t) = r(t) RJC RJC = 83.3C/W MAX ZJA(t) = r(t) RJA RJA = 200C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) P(pk) 0.2 0.5 1.0 2.0 10 5.0 20 t, TIME (ms) 50 100 200 500 1.0k 2.0k 5.0k 10k Figure 13. Thermal Response -200 1s The safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 14 is based upon TJ(pk) = 150C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from the data in Figure 13. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. 3 ms IC, COLLECTOR CURRENT (mA) -100 -50 -10 -5.0 -2.0 -1.0 TA = 25C TJ = 25C BC558, BC559 BC557 BC556 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT -5.0 -10 -30 -45 -65 -100 VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 14. Active Region Safe Operating Area http://onsemi.com 304 BC856AWT1 Series, BC857BWT1 Series, BC858AWT1 Series Preferred Devices General Purpose Transistors http://onsemi.com PNP Silicon COLLECTOR 3 These transistors are designed for general purpose amplifier applications. They are housed in the SOT-323/SC-70 which is designed for low power surface mount applications. * Device Marking: BC856AWT1 = 3A BC856BWT1 = 3B BC857BWT1 = 3F BC857CWT1 = 3G BC858AWT1 = 3J BC858BWT1 = 3K 1 BASE 2 EMITTER 3 1 2 MAXIMUM RATINGS Rating Symbol BC856 BC857 BC858 Unit Collector-Emitter Voltage VCEO -65 -45 -30 V Collector-Base Voltage VCBO -80 -50 -30 V Emitter-Base Voltage VEBO -5.0 -5.0 -5.0 V IC -100 -100 -100 mAdc Collector Current - Continuous SOT-323/SC-70 CASE 419 STYLE 3 DEVICE MARKING See Device Marking Listing THERMAL CHARACTERISTICS Characteristic Symbol Max Unit PD 150 mW Thermal Resistance, Junction to Ambient RJA 833 C/W Junction and Storage Temperature Range TJ, Tstg -55 to +150 C Total Device Dissipation FR-5 Board (1) TA = 25C ORDERING INFORMATION Device 1. FR-5 = 1.0 x 0.75 x 0.062 in Package Shipping BC856AWT1 SOT-323 3000 Units/Reel BC856BWT1 SOT-323 3000 Units/Reel BC857BWT1 SOT-323 3000 Units/Reel BC857CWT1 SOT-323 3000 Units/Reel BC858AWT1 SOT-323 3000 Units/Reel BC858BWT1 SOT-323 3000 Units/Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 October, 2001 - Rev. 2 305 Publication Order Number: BC856AWT1/D BC856AWT1 Series, BC857BWT1 Series, BC858AWT1 Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = -10 mA) BC856 Series BC857 Series BC858 Series V(BR)CEO -65 -45 -30 - - - - - - V Collector-Emitter Breakdown Voltage (IC = -10 A, VEB = 0) BC856 Series BC857B Only BC858 Series V(BR)CES -80 -50 -30 - - - - - - V Collector-Base Breakdown Voltage (IC = -10 A) BC856 Series BC857 Series BC858 Series V(BR)CBO -80 -50 -30 - - - - - - V Emitter-Base Breakdown Voltage (IE = -1.0 A) BC856 Series BC857 Series BC858 Series V(BR)EBO -5.0 -5.0 -5.0 - - - - - - V ICBO - - - - -15 -4.0 nA A hFE - - - 90 150 270 - - - - 125 220 420 180 290 520 250 475 800 - - - - -0.3 -0.65 - - -0.7 -0.9 - - -0.6 - - - -0.75 -0.82 fT 100 - - MHz Output Capacitance (VCB = -10 V, f = 1.0 MHz) Cob - - 4.5 pF Noise Figure (IC = -0.2 mA, VCE = -5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz) NF - - 10 dB Collector Cutoff Current (VCB = -30 V) Collector Cutoff Current (VCB = -30 V, TA = 150C) ON CHARACTERISTICS DC Current Gain (IC = -10 A, VCE = -5.0 V) (IC = -2.0 mA, VCE = -5.0 V) BC856A, BC585A BC856B, BC857B, BC858B BC857C BC856A, BC858A BC856B, BC857B, BC858B BC857C Collector-Emitter Saturation Voltage (IC = -10 mA, IB = -0.5 mA) (IC = -100 mA, IB = -5.0 mA) VCE(sat) Base-Emitter Saturation Voltage (IC = -10 mA, IB = -0.5 mA) (IC = -100 mA, IB = -5.0 mA) VBE(sat) Base-Emitter On Voltage (IC = -2.0 mA, VCE = -5.0 V) (IC = -10 mA, VCE = -5.0 V) VBE(on) V V V SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (IC = -10 mA, VCE = -5.0 Vdc, f = 100 MHz) http://onsemi.com 306 BC856AWT1 Series, BC857BWT1 Series, BC858AWT1 Series BC857/BC858 -1.0 1.5 TA = 25C -0.9 VCE = -10 V TA = 25C -0.8 1.0 V, VOLTAGE (VOLTS) hFE , NORMALIZED DC CURRENT GAIN 2.0 0.7 0.5 -0.7 VBE(on) @ VCE = -10 V -0.6 -0.5 -0.4 -0.3 -0.2 0.3 VCE(sat) @ IC/IB = 10 -0.1 0.2 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 IC, COLLECTOR CURRENT (mAdc) 0 -0.1 -0.2 -100 -200 TA = 25C -1.6 -1.2 IC = -10 mA IC = -50 mA IC = -200 mA IC = -100 mA IC = -20 mA -0.4 -0.02 1.6 2.0 2.4 2.8 -10 -20 -0.1 -1.0 IB, BASE CURRENT (mA) -0.2 TA = 25C 5.0 Cob 2.0 1.0 -0.4 -0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40 f, T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) Cib 3.0 -10 -1.0 IC, COLLECTOR CURRENT (mA) -100 Figure 4. Base-Emitter Temperature Coefficient 10 7.0 -55C to +125C 1.2 Figure 3. Collector Saturation Region C, CAPACITANCE (pF) -100 -50 1.0 -2.0 0 -0.5 -1.0 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mAdc) Figure 2. "Saturation" and "On" Voltages VB , TEMPERATURE COEFFICIENT (mV/ C) VCE , COLLECTOR-EMITTER VOLTAGE (V) Figure 1. Normalized DC Current Gain -0.8 VBE(sat) @ IC/IB = 10 400 300 200 150 VCE = -10 V TA = 25C 100 80 60 40 30 20 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc) Figure 5. Capacitances Figure 6. Current-Gain - Bandwidth Product http://onsemi.com 307 BC856AWT1 Series, BC857BWT1 Series, BC858AWT1 Series BC856 TJ = 25C VCE = -5.0 V TA = 25C -0.8 V, VOLTAGE (VOLTS) hFE , DC CURRENT GAIN (NORMALIZED) -1.0 2.0 1.0 0.5 VBE(sat) @ IC/IB = 10 -0.6 VBE @ VCE = -5.0 V -0.4 -0.2 0.2 VCE(sat) @ IC/IB = 10 0 -0.2 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) -0.1 -0.2 -0.5 -50 -100 -200 -5.0 -10 -20 -1.0 -2.0 IC, COLLECTOR CURRENT (mA) Figure 8. "On" Voltage -2.0 -1.6 -1.2 IC = -10 mA -20 mA -50 mA -100 mA -200 mA -0.8 -0.4 TJ = 25C 0 -0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 IB, BASE CURRENT (mA) -5.0 -10 VB, TEMPERATURE COEFFICIENT (mV/ C) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. DC Current Gain -20 -1.0 -1.4 -1.8 -2.6 -3.0 -0.2 20 Cib 10 8.0 6.0 Cob 4.0 2.0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 VR, REVERSE VOLTAGE (VOLTS) -0.5 -1.0 -50 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mA) -100 -200 Figure 10. Base-Emitter Temperature Coefficient f, T CURRENT-GAIN - BANDWIDTH PRODUCT C, CAPACITANCE (pF) TJ = 25C -55C to 125C -2.2 Figure 9. Collector Saturation Region 40 VB for VBE VCE = -5.0 V 500 200 100 50 20 -100 -1.0 -10 IC, COLLECTOR CURRENT (mA) -50 -100 Figure 11. Capacitance Figure 12. Current-Gain - Bandwidth Product http://onsemi.com 308 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) BC856AWT1 Series, BC857BWT1 Series, BC858AWT1 Series 1.0 0.7 0.5 D = 0.5 0.2 0.3 0.2 0.1 0.1 0.07 0.05 0.05 SINGLE PULSE ZJC(t) = r(t) RJC RJC = 83.3 C/W MAX ZJA(t) = r(t) RJA RJA = 200 C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) P(pk) SINGLE PULSE t1 t2 0.03 DUTY CYCLE, D = t1/t2 0.02 0.01 0.1 0.2 0.5 1.0 2.0 10 5.0 20 50 t, TIME (ms) 100 200 500 1.0k 2.0k 5.0k 10k Figure 13. Thermal Response -200 1s IC, COLLECTOR CURRENT (mA) -100 -50 -10 -5.0 -2.0 -1.0 TA = 25C The safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 14 is based upon TJ(pk) = 150C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from the data in Figure 13. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. 3 ms TJ = 25C BC858 BC857 BC856 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT -5.0 -10 -30 -45 -65 -100 VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 14. Active Region Safe Operating Area http://onsemi.com 309 BC856BDW1T1, BC857BDW1T1 Series, BC858BDW1T1 Series Preferred Devices Dual General Purpose Transistors http://onsemi.com PNP Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications. * Device Marking: BC856BDW1T1 = 3B BC857BDW1T1 = 3F BC857CDW1T1 = 3G BC858BDW1T1 = 3K BC858CDW1T1 = 3L (3) (2) Q1 Q2 (4) (5) (6) MAXIMUM RATINGS Rating 6 5 Symbol BC856 BC857 BC858 Unit Collector-Emitter Voltage VCEO -65 -45 -30 V Collector-Base Voltage VCBO -80 -50 -30 V Emitter-Base Voltage VEBO -5.0 -5.0 -5.0 V IC -100 -100 -100 mAdc Collector Current - Continuous 1 Total Device Dissipation Per Device FR-5 Board (Note 1.) TA = 25C Derate Above 25C 2 4 3 SOT-363/SC-88 CASE 419B STYLE 1 THERMAL CHARACTERISTICS Characteristic (1) DEVICE MARKING Symbol Max Unit PD 380 250 mW See Table 3.0 mW/C Thermal Resistance, Junction to Ambient RJA 328 C/W Junction and Storage Temperature Range TJ, Tstg -55 to +150 C ORDERING INFORMATION 1. FR-5 = 1.0 x 0.75 x 0.062 in Device Package Shipping BC856BDW1T1 SOT-363 3000 Units/Reel BC857BDW1T1 SOT-363 3000 Units/Reel BC857CDW1T1 SOT-363 3000 Units/Reel BC858BDW1T1 SOT-363 3000 Units/Reel BC858CDW1T1 SOT-363 3000 Units/Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 January, 2001 - Rev. 1 310 Publication Order Number: BC856BDW1T1/D BC856BDW1T1, BC857BDW1T1 Series, BC858BDW1T1 Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit -65 -45 -30 - - - - - - -80 -50 -30 - - - - - - -80 -50 -30 - - - - - - -5.0 -5.0 -5.0 - - - - - - - - - - -15 -4.0 BC856B, BC857B, BC858B BC857C, BC858C - - 150 270 - - BC856B, BC857B, BC858B BC857C, BC858C 220 420 290 520 475 800 - - - - -0.3 -0.65 - - -0.7 -0.9 - - -0.6 - - - -0.75 -0.82 fT 100 - - MHz Output Capacitance (VCB = -10 V, f = 1.0 MHz) Cob - - 4.5 pF Noise Figure (IC = -0.2 mA, VCE = -5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz) NF - - 10 dB OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = -10 mA) Collector-Emitter Breakdown Voltage (IC = -10 A, VEB = 0) Collector-Base Breakdown Voltage (IC = -10 A) Emitter-Base Breakdown Voltage (IE = -1.0 A) V(BR)CEO BC856 Series BC857 Series BC858 Series V V(BR)CES BC856 Series BC857B Only BC858 Series V V(BR)CBO BC856 Series BC857 Series BC858 Series V V(BR)EBO BC856 Series BC857 Series BC858 Series Collector Cutoff Current (VCB = -30 V) Collector Cutoff Current (VCB = -30 V, TA = 150C) ICBO V nA A ON CHARACTERISTICS DC Current Gain (IC = -10 A, VCE = -5.0 V) (IC = -2.0 mA, VCE = -5.0 V) hFE Collector-Emitter Saturation Voltage (IC = -10 mA, IB = -0.5 mA) (IC = -100 mA, IB = -5.0 mA) VCE(sat) Base-Emitter Saturation Voltage (IC = -10 mA, IB = -0.5 mA) (IC = -100 mA, IB = -5.0 mA) VBE(sat) Base-Emitter On Voltage (IC = -2.0 mA, VCE = -5.0 V) (IC = -10 mA, VCE = -5.0 V) VBE(on) - V V V SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (IC = -10 mA, VCE = -5.0 Vdc, f = 100 MHz) http://onsemi.com 311 BC856BDW1T1, BC857BDW1T1 Series, BC858BDW1T1 Series TYPICAL CHARACTERISTICS - BC856 TJ = 25C VCE = -5.0 V TA = 25C -0.8 V, VOLTAGE (VOLTS) hFE , DC CURRENT GAIN (NORMALIZED) -1.0 2.0 1.0 0.5 VBE(sat) @ IC/IB = 10 -0.6 VBE @ VCE = -5.0 V -0.4 -0.2 0.2 VCE(sat) @ IC/IB = 10 0 -0.2 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) -0.1 -0.2 -0.5 -50 -100 -200 -5.0 -10 -20 -1.0 -2.0 IC, COLLECTOR CURRENT (mA) Figure 2. "On" Voltage -2.0 -1.6 -1.2 IC = -10 mA -20 mA -50 mA -100 mA -200 mA -0.8 -0.4 TJ = 25C 0 -0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 IB, BASE CURRENT (mA) -5.0 -10 VB, TEMPERATURE COEFFICIENT (mV/ C) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain -20 -1.0 -1.4 -1.8 -2.6 -3.0 -0.2 20 Cib 10 8.0 6.0 Cob 4.0 2.0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 VR, REVERSE VOLTAGE (VOLTS) -0.5 -1.0 -50 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mA) -100 -200 Figure 4. Base-Emitter Temperature Coefficient f, T CURRENT-GAIN - BANDWIDTH PRODUCT C, CAPACITANCE (pF) TJ = 25C -55C to 125C -2.2 Figure 3. Collector Saturation Region 40 VB for VBE 500 VCE = -5.0 V 200 100 50 20 -100 -1.0 -10 IC, COLLECTOR CURRENT (mA) -50 -100 Figure 5. Capacitance Figure 6. Current-Gain - Bandwidth Product http://onsemi.com 312 BC856BDW1T1, BC857BDW1T1 Series, BC858BDW1T1 Series TYPICAL CHARACTERISTICS - BC857/BC858 -1.0 1.5 TA = 25C -0.9 VCE = -10 V TA = 25C -0.8 1.0 V, VOLTAGE (VOLTS) hFE , NORMALIZED DC CURRENT GAIN 2.0 0.7 0.5 -0.7 VBE(on) @ VCE = -10 V -0.6 -0.5 -0.4 -0.3 -0.2 0.3 VCE(sat) @ IC/IB = 10 -0.1 0.2 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 IC, COLLECTOR CURRENT (mAdc) 0 -0.1 -0.2 -100 -200 TA = 25C -1.6 -1.2 IC = -10 mA IC = -50 mA IC = -200 mA IC = -100 mA IC = -20 mA -0.4 -0.02 -55C to +125C 1.2 1.6 2.0 2.4 2.8 -10 -20 -0.1 -1.0 IB, BASE CURRENT (mA) -0.2 10 Cib 7.0 TA = 25C 5.0 Cob 3.0 2.0 1.0 -0.4 -0.6 -1.0 -2.0 -4.0 -6.0 -10 -10 -1.0 IC, COLLECTOR CURRENT (mA) -100 Figure 10. Base-Emitter Temperature Coefficient -20 -30 -40 f, T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) Figure 9. Collector Saturation Region C, CAPACITANCE (pF) -100 -50 1.0 -2.0 0 -0.5 -1.0 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mAdc) Figure 8. "Saturation" and "On" Voltages VB , TEMPERATURE COEFFICIENT (mV/ C) VCE , COLLECTOR-EMITTER VOLTAGE (V) Figure 7. Normalized DC Current Gain -0.8 VBE(sat) @ IC/IB = 10 400 300 200 150 VCE = -10 V TA = 25C 100 80 60 40 30 20 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc) Figure 11. Capacitances Figure 12. Current-Gain - Bandwidth Product http://onsemi.com 313 BC856BDW1T1, BC857BDW1T1 Series, BC858BDW1T1 Series r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 ZJA(t) = r(t) RJA RJA = 328 C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) P(pk) t1 0.01 t2 DUTY CYCLE, D = t1/t2 0.001 SINGLE PULSE 0 10 1.0 100 1.0k 10k 100k 1.0M t, TIME (ms) Figure 13. Thermal Response -200 1s IC, COLLECTOR CURRENT (mA) -100 -50 -10 -5.0 -2.0 -1.0 TA = 25C The safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 14 is based upon TJ(pk) = 150C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from the data in Figure 13. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. 3 ms TJ = 25C BC558 BC557 BC556 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT -5.0 -10 -30 -45 -65 -100 VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 14. Active Region Safe Operating Area http://onsemi.com 314 BC857BTT1, BC857CTT1 Preferred Devices Advance Information General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT-416/SC-75 which is designed for low power surface mount applications. http://onsemi.com * Device Marking: COLLECTOR 3 BC857BTT1 = 3F BC857CTT1 = 3G 1 BASE 2 EMITTER MAXIMUM RATINGS (TA = 25C) Rating Symbol Max Unit Collector-Emitter Voltage VCEO -45 V Collector-Base Voltage VCBO -50 V Emitter-Base Voltage VEBO -5.0 V IC -100 mAdc Collector Current -- Continuous 3 2 1 THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation, FR-4 Board (1) TA = 25C Derated above 25C PD Thermal Resistance, Junction to Ambient (1) RJA Total Device Dissipation, FR-4 Board (2) TA = 25C Derated above 25C PD Thermal Resistance, Junction to Ambient (2) Junction and Storage Temperature Range Max Unit 200 mW 1.6 mW/C 600 C/W CASE 463 SOT-416/SC-75 STYLE 1 DEVICE MARKING 300 mW 2.4 mW/C RJA 400 C/W TJ, Tstg -55 to +150 C (1) FR-4 @ Minimum Pad (2) FR-4 @ 1.0 x 1.0 Inch Pad See Table ORDERING INFORMATION Device Package Shipping BC857BTT1 SOT-416 3000 / Tape & Reel BC857CTT1 SOT-416 3000 / Tape & Reel Preferred devices are recommended choices for future use and best overall value. This document contains information on a new product. Specifications and information herein are subject to change without notice. Semiconductor Components Industries, LLC, 2001 May, 2000 - Rev. 1 315 Publication Order Number: BC857BTT1/D BC857BTT1, BC857CTT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit -45 -- -- -50 -- -- -50 -- -- -5.0 -- -- -- -- -- -- -15 -4.0 BC857B BC857C -- -- 150 270 -- -- BC857B BC857C 220 420 290 520 475 800 -- -- -- -- -0.3 -0.65 -- -- -0.7 -0.9 -- -- -0.6 -- -- -- -0.75 -0.82 fT 100 -- -- MHz Output Capacitance (VCB = -10 V, f = 1.0 MHz) Cob -- -- 4.5 pF Noise Figure (IC = -0.2 mA, VCE = -5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz) NF -- -- 10 dB OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = -10 mA) BC857 Series V(BR)CEO Collector-Emitter Breakdown Voltage (IC = -10 A, VEB = 0) BC857B Only Collector-Base Breakdown Voltage (IC = -10 A) BC857 Series Emitter-Base Breakdown Voltage (IE = -1.0 A) BC857 Series V V(BR)CES V V(BR)CBO V V(BR)EBO Collector Cutoff Current (VCB = -30 V) Collector Cutoff Current (VCB = -30 V, TA = 150C) ICBO V nA A ON CHARACTERISTICS DC Current Gain (IC = -10 A, VCE = -5.0 V) (IC = -2.0 mA, VCE = -5.0 V) hFE Collector-Emitter Saturation Voltage (IC = -10 mA, IB = -0.5 mA) (IC = -100 mA, IB = -5.0 mA) VCE(sat) Base-Emitter Saturation Voltage (IC = -10 mA, IB = -0.5 mA) (IC = -100 mA, IB = -5.0 mA) VBE(sat) Base-Emitter On Voltage (IC = -2.0 mA, VCE = -5.0 V) (IC = -10 mA, VCE = -5.0 V) VBE(on) -- V V V SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = -10 mA, VCE = -5.0 Vdc, f = 100 MHz) http://onsemi.com 316 BC857BTT1, BC857CTT1 TYPICAL CHARACTERISTICS 1.5 -1.0 TA = 25C -0.9 VCE = -10 V TA = 25C -0.8 1.0 V, VOLTAGE (VOLTS) hFE , NORMALIZED DC CURRENT GAIN 2.0 0.7 0.5 -0.7 VBE(on) @ VCE = -10 V -0.6 -0.5 -0.4 -0.3 -0.2 0.3 VCE(sat) @ IC/IB = 10 -0.1 0.2 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 IC, COLLECTOR CURRENT (mAdc) 0 -0.1 -0.2 -100 -200 TA = 25C -1.6 -1.2 IC = -10 mA IC = -50 mA IC = -200 mA IC = -100 mA IC = -20 mA -0.4 -0.02 1.6 2.0 2.4 2.8 -10 -20 -0.1 -1.0 IB, BASE CURRENT (mA) -0.2 TA = 25C 5.0 Cob 2.0 1.0 -0.4 -0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40 f, T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) Cib 3.0 -10 -1.0 IC, COLLECTOR CURRENT (mA) -100 Figure 4. Base-Emitter Temperature Coefficient 10 7.0 -55C to +125C 1.2 Figure 3. Collector Saturation Region C, CAPACITANCE (pF) -100 -50 1.0 -2.0 0 -0.5 -1.0 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mAdc) Figure 2. "Saturation" and "On" Voltages VB , TEMPERATURE COEFFICIENT (mV/ C) VCE , COLLECTOR-EMITTER VOLTAGE (V) Figure 1. Normalized DC Current Gain -0.8 VBE(sat) @ IC/IB = 10 400 300 200 150 VCE = -10 V TA = 25C 100 80 60 40 30 20 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc) Figure 5. Capacitances Figure 6. Current-Gain - Bandwidth Product http://onsemi.com 317 r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE BC857BTT1, BC857CTT1 1.0 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 t, TIME (s) Figure 7. Thermal Response -200 1s IC, COLLECTOR CURRENT (mA) -100 -50 -10 -5.0 -2.0 -1.0 TA = 25C The safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 8 is based upon TJ(pk) = 150C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from the data in Figure 7. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. 3 ms TJ = 25C BC558 BC557 BC556 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT -5.0 -10 -30 -45 -65 -100 VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 8. Active Region Safe Operating Area http://onsemi.com 318 BCP53T1 Series Preferred Devices PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. http://onsemi.com * High Current: 1.5 Amps * NPN Complement is BCP56 * The SOT-223 Package can be soldered using wave or reflow. The * * MEDIUM POWER HIGH CURRENT SURFACE MOUNT PNP TRANSISTORS formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die Available in 12 mm Tape and Reel Use BCP53T1 to order the 7 inch/1000 unit reel. Use BCP53T3 to order the 13 inch/4000 unit reel. Device Marking: BCP53T1 = AH BCP53-10T1 = AH-10 BCP53-16T1 = AH-16 COLLECTOR 2,4 BASE 1 EMITTER 3 MAXIMUM RATINGS (TC = 25C unless otherwise noted) Symbol Value Unit Collector-Emitter Voltage VCEO -80 Vdc Collector-Base Voltage VCBO -100 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current IC 1.5 Adc Total Power Dissipation @ TA = 25C (Note 1.) Derate above 25C PD 1.5 12 Watts mW/C -65 to +150 C Rating Operating and Storage Temperature Range TJ, Tstg Thermal Resistance, Junction to Ambient (surface mounted) Lead Temperature for Soldering, 0.0625 from case Time in Solder Bath Symbol Max Unit RJA 83.3 C/W TL 260 10 C Sec 1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in. Semiconductor Components Industries, LLC, 2001 November, 2000 - Rev. 2 1 2 MARKING DIAGRAM 3 SOT-223 CASE 318E STYLE 1 AHxxx AHxxx = Device Code xxx = -10 or -16 ORDERING INFORMATION THERMAL CHARACTERISTICS Characteristic 4 319 Device Package Shipping BCP53T1 SOT-223 1000/Tape & Reel BCP53-10T1 SOT-223 1000/Tape & Reel BCP53-16T1 SOT-223 1000/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Publication Order Number: BCP53T1/D BCP53T1 Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristics Symbol Min Typ Max Unit Collector-Base Breakdown Voltage (IC = -100 Adc, IE = 0) V(BR)CBO -100 - - Vdc Collector-Emitter Breakdown Voltage (IC = -1.0 mAdc, IB = 0) V(BR)CEO -80 - - Vdc Collector-Emitter Breakdown Voltage (IC = -100 Adc, RBE = 1.0 kohm) V(BR)CER -100 - - Vdc Emitter-Base Breakdown Voltage (IE = -10 Adc, IC = 0) V(BR)EBO -5.0 - - Vdc Collector-Base Cutoff Current (VCB = -30 Vdc, IE = 0) ICBO - - -100 nAdc Emitter-Base Cutoff Current (VEB = -5.0 Vdc, IC = 0) IEBO - - -10 Adc DC Current Gain (IC = -5.0 mAdc, VCE = -2.0 Vdc) All Part Types (IC = -150 mAdc, VCE = -2.0 Vdc) BCP53T1 BCP53-10T1 BCP53-16T1 (IC = -500 mAdc, VCE = -2.0 Vdc) All Part Types hFE 25 40 63 100 25 - - - - - - 250 160 250 - - Collector-Emitter Saturation Voltage (IC = -500 mAdc, IB = -50 mAdc) VCE(sat) - - -0.5 Vdc Base-Emitter On Voltage (IC = -500 mAdc, VCE = -2.0 Vdc) VBE(on) - - -1.0 Vdc fT - 50 - MHz OFF CHARACTERISTICS ON CHARACTERISTICS DYNAMIC CHARACTERISTICS Current-Gain - Bandwidth Product (IC = -10 mAdc, VCE = -5.0 Vdc, f = 35 MHz) hFE , DC CURRENT GAIN VCE = 2 V 200 100 50 20 1 3 5 10 30 50 100 IC, COLLECTOR CURRENT (mA) 300 500 1000 f T , CURRENT GAIN BANDWIDTH PRODUCT (MHz) TYPICAL ELECTRICAL CHARACTERISTICS 500 500 300 VCE = 2 V 100 50 20 1 Figure 1. DC Current Gain Figure 2. Current Gain Bandwidth Product 1 V(BE)sat @ IC/IB = 10 C, CAPACITANCE (pF) V, VOLTAGE (VOLTS) 0.8 V(BE)on @ VCE = 2 V 0.6 0.4 0.2 V(CE)sat @ IC/IB = 10 0 1 10 1000 10 100 IC, COLLECTOR CURRENT (mA) 100 120 110 100 90 80 70 60 50 40 30 20 10 0 1000 Cib Cob 0 2 4 6 8 10 12 14 IC, COLLECTOR CURRENT (mA) V, VOLTAGE (VOLTS) Figure 3. Saturation and "ON" Voltages Figure 4. Capacitances http://onsemi.com 320 16 18 20 BCP56T1 Series Preferred Devices NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications. * High Current: 1.0 Amp * The SOT-223 package can be soldered using wave or reflow. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die * Available in 12 mm Tape and Reel Use BCP56T1 to order the 7 inch/1000 unit reel Use BCP56T3 to order the 13 inch/4000 unit reel * PNP Complement is BCP53T1 * Device Marking BCP56T1-10 = BH BCP56-10T1 = BH-10 BCP56-16T1 = BH-16 http://onsemi.com MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT COLLECTOR 2,4 BASE 1 EMITTER 3 MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter Voltage VCEO 80 Vdc Collector-Base Voltage VCBO 100 Vdc Emitter-Base Voltage VEBO 5 Vdc Collector Current IC 1 Adc Total Power Dissipation @ TA = 25C (Note 1.) Derate above 25C PD 1.5 12 Watts mW/C -65 to 150 C Operating and Storage Temperature Range TJ, Tstg Thermal Resistance Junction-to-Ambient (surface mounted) Maximum Temperature for Soldering Purposes Time in Solder Bath 1 BHxxx 2 3 SOT-223, TO-261AA CASE 318E STYLE 1 BHxxx = Device Code xxx = -10 or -16 ORDERING INFORMATION THERMAL CHARACTERISTICS Characteristic MARKING DIAGRAM 4 Symbol Max Unit RJA 83.3 C/W TL 260 10 C Sec 1. Device mounted on a FR-4 glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.0625 in.; mounting pad for the collector lead = 0.93 sq. in. Device Package Shipping BCP56T1 SOT-223 1000/Tape & Reel BCP56T3 SOT-223 4000/Tape & Reel BCP56-10T1 SOT-223 1000/Tape & Reel BCP56-16T1 SOT-223 1000/Tape & Reel BCP56-16T3 SOT-223 4000/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 September, 2000 - Rev. 2 321 Publication Order Number: BCP56T1/D BCP56T1 Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristics Symbol Min Typ Max Unit Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0) V(BR)CBO 100 - - Vdc Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 80 - - Vdc Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO 5.0 - - Vdc Collector-Base Cutoff Current (VCB = 30 Vdc, IE = 0) ICBO - - 100 nAdc Emitter-Base Cutoff Current (VEB = 5.0 Vdc, IC = 0) IEBO - - 10 Adc 25 40 63 100 25 - - - - - - 250 160 250 - OFF CHARACTERISTICS ON CHARACTERISTICS (Note 2.) DC Current Gain (IC = 5.0 mA, VCE = 2.0 V) (IC = 150 mA, VCE = 2.0 V) (IC = 500 mA, VCE = 2.0 V) hFE All Part Types BCP56T1 BCP56-10T1 BCP56-16T1 All Types - Collector-Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) VCE(sat) - - 0.5 Vdc Base-Emitter On Voltage (IC = 500 mAdc, VCE = 2.0 Vdc) VBE(on) - - 1.0 Vdc fT - 130 - MHz DYNAMIC CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc, f = 35 MHz) 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% http://onsemi.com 322 BCP56T1 Series TYPICAL ELECTRICAL CHARACTERISTICS hFE, DC CURRENT GAIN 1000 TJ = 125C TJ = 25C 100 10 TJ = -55C 1 10 100 1000 IC, COLLECTOR CURRENT (mA) 1000 80 60 C, CAPACITANCE (pF) f, T CURRENTGAIN BANDWIDTH PRODUCT (MHz) Figure 1. DC Current Gain 100 TJ = 25C 40 Cibo 20 10 8.0 6.0 10 1.0 10 100 IC, COLLECTOR CURRENT (mA) Cobo 4.0 0.1 1000 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 1.0 V, VOLTAGE (VOLTS) 0.8 TJ = 25C VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.5 1.0 2.0 100 5.0 10 20 50 IC, COLLECTOR CURRENT (mA) 200 100 Figure 3. Capacitance VCE , COLLECTOREMITTER VOLTAGE (VOLTS) Figure 2. Current-Gain - Bandwidth Product 50 500 1.0 TJ = 25C 0.8 0.6 IC = 10mA 50 mA 100mA 250mA 500mA 0.4 0.2 0 0.05 Figure 4. "On" Voltages 0.1 0.2 0.5 5.0 10 1.0 2.0 IC, COLLECTOR CURRENT (mA) 20 Figure 5. Collector Saturation Region http://onsemi.com 323 50 ON Semiconductor BCP68T1 NPN Silicon Epitaxial Transistor ON Semiconductor Preferred Device MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications. * High Current: IC = 1.0 Amp * The SOT-223 Package can be soldered using wave or reflow. * SOT-223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die * Available in 12 mm Tape and Reel Use BCP68T1 to order the 7 inch/1000 unit reel. Use BCP68T3 to order the 13 inch/4000 unit reel. * The PNP Complement is BCP69T1 4 1 2 3 CASE 318E-04, STYLE 1 TO-261AA COLLECTOR 2,4 BASE 1 EMITTER 3 MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 20 Vdc Emitter-Base Voltage VEBO 5 Vdc Collector Current IC 1 Adc Total Power Dissipation @ TA = 25C(1) Derate above 25C PD 1.5 12 Watts mW/C TJ, Tstg -65 to 150 C Symbol Max Unit RJA 83.3 C/W TL 260 10 C Sec Operating and Storage Temperature Range DEVICE MARKING CA THERMAL CHARACTERISTICS Characteristic Thermal Resistance -- Junction-to-Ambient (surface mounted) Maximum Temperature for Soldering Purposes Time in Solder Bath 1. Device mounted on a FR-4 glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.0625 in.; mounting pad for the collector lead = 0.93 sq. in. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 2 324 Publication Order Number: BCP68T1/D BCP68T1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristics Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (IC = 100 Adc, IE = 0) V(BR)CES 25 -- -- Vdc Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 20 -- -- Vdc Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO 5.0 -- -- Vdc Collector-Base Cutoff Current (VCB = 25 Vdc, IE = 0) ICBO -- -- 10 Adc Emitter-Base Cutoff Current (VEB = 5.0 Vdc, IC = 0) IEBO -- -- 10 Adc 50 85 60 -- -- -- -- 375 -- OFF CHARACTERISTICS ON CHARACTERISTICS (2) DC Current Gain (IC = 5.0 mAdc, VCE = 10 Vdc) (IC = 500 mAdc, VCE = 1.0 Vdc) (IC = 1.0 Adc, VCE = 1.0 Vdc) hFE -- Collector-Emitter Saturation Voltage (IC = 1.0 Adc, IB = 100 mAdc) VCE(sat) -- -- 0.5 Vdc Base-Emitter On Voltage (IC = 1.0 Adc, VCE = 1.0 Vdc) VBE(on) -- -- 1.0 Vdc fT -- 60 -- MHz DYNAMIC CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc) 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% 300 200 100 TJ = 125C = 25C = -55C VCE = 1.0 V 10 1.0 10 100 IC, COLLECTOR CURRENT (mA) 1000 f, T CURRENTGAINBANDWIDTH PRODUCT (MHz) hFE, DC CURRENT GAIN TYPICAL ELECTRICAL CHARACTERISTICS 300 200 100 70 VCE = 10 V TJ = 25C f = 30 MHz 50 30 10 Figure 1. DC Current Gain 100 200 IC, COLLECTOR CURRENT (mA) Figure 2. Current-Gain-Bandwidth Product http://onsemi.com 325 1000 BCP68T1 TYPICAL ELECTRICAL CHARACTERISTICS 80 TJ = 25C 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V TJ = 25C Cib, CAPACITANCE (pF) V, VOLTAGE (VOLTS) 1.0 0.4 0.2 0 60 50 40 VCE(sat) @ IC/IB = 10 1.0 70 30 10 100 1000 IC, COLLECTOR CURRENT (mA) 0 1.0 Figure 3. "On" Voltage RVB, TEMPERATURE COEFFICIENT (mV/C) 20 15 10 5.0 10 15 VR, REVERSE VOLTAGE (VOLTS) 20 -0.8 -1.2 -1.6 RVB for VBE -2.0 -2.4 -2.8 1.0 Figure 5. Capacitance 10 100 IC, COLLECTOR CURRENT (mA) TJ = 25C 0.8 0.6 0.4 = 1000 mA I C = 10 mA = 50 mA = 100 mA 0.2 0 0.01 1000 Figure 6. Base-Emitter Temperature Coefficient 1.0 VCE , COLLECTOR VOLTAGE (V) Cob, CAPACITANCE (pF) TJ = 25C 0 5.0 Figure 4. Capacitance 25 5.0 2.0 3.0 4.0 VR, REVERSE VOLTAGE (VOLTS) = 500 mA 0.1 1.0 IB, BASE CURRENT (mA) 10 Figure 7. Saturation Region http://onsemi.com 326 100 ON Semiconductor BCP69T1 PNP Silicon Epitaxial Transistor ON Semiconductor Preferred Device This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications. * High Current: IC = -1.0 Amp * The SOT-223 Package can be soldered using wave or reflow. * SOT-223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die. * Available in 12 mm Tape and Reel Use BCP69T1 to order the 7 inch/1000 unit reel. Use BCP69T3 to order the 13 inch/4000 unit reel. * NPN Complement is BCP68 MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT 4 1 3 CASE 318E-04, STYLE 1 TO-261AA MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating COLLECTOR 2,4 Symbol Value Unit Collector-Emitter Voltage VCEO -25 Vdc Collector-Base Voltage VCBO -20 Vdc Emitter-Base Voltage BASE 1 VEBO -5.0 Vdc Collector Current IC -1.0 Adc Total Power Dissipation @ TA = 25C(1) Derate above 25C PD 1.5 12 Watts mW/C TJ, Tstg -65 to 150 C Operating and Storage Temperature Range 2 EMITTER 3 Preferred devices are recommended choices for future use and best overall value. 1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in. DEVICE MARKING CE THERMAL CHARACTERISTICS Characteristic Symbol Max Unit RJA 83.3 C/W TL 260 10 C Sec Thermal Resistance -- Junction-to-Ambient (surface mounted) Lead Temperature for Soldering, 0.0625 from case Time in Solder Bath ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristics Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (IC = -100 Adc, IE = 0) V(BR)CES -25 -- -- Vdc Collector-Emitter Breakdown Voltage (IC = -1.0 mAdc, IB = 0) V(BR)CEO -20 -- -- Vdc Emitter-Base Breakdown Voltage (IE = -10 Adc, IC = 0) V(BR)EBO -5.0 -- -- Vdc OFF CHARACTERISTICS Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 3 327 Publication Order Number: BCP69T1/D BCP69T1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristics Symbol Min Typ Max Unit Collector-Base Cutoff Current (VCB = -25 Vdc, IE = 0) ICBO -- -- -10 Adc Emitter-Base Cutoff Current (VEB = -5.0 Vdc, IC = 0) IEBO -- -- -10 Adc 50 85 60 -- -- -- -- 375 -- OFF CHARACTERISTICS ON CHARACTERISTICS DC Current Gain (IC = -5.0 mAdc, VCE = -10 Vdc) (IC = -500 mAdc, VCE = -1.0 Vdc) (IC = -1.0 Adc, VCE = -1.0 Vdc) hFE -- Collector-Emitter Saturation Voltage (IC = -1.0 Adc, IB = -100 mAdc) VCE(sat) -- -- -0.5 Vdc Base-Emitter On Voltage (IC = -1.0 Adc, VCE = -1.0 Vdc) VBE(on) -- -- -1.0 Vdc fT -- 60 -- MHz DYNAMIC CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = -10 mAdc, VCE = -5.0 Vdc) Figure 8. hFE , CURRENT GAIN 100 70 50 VCE = -1.0 V TJ = 25C 20 -10 -100 IC, COLLECTOR CURRENT (mA) -1000 f T , CURRENT GAIN BANDWIDTH PRODUCT (MHz) TYPICAL ELECTRICAL CHARACTERISTICS 200 300 200 100 VCE = -10 V TJ = 25C f = 30 MHz 70 50 30 -10 Figure 1. DC Current Gain V, VOLTAGE (VOLTS) 160 TJ = 25C -0.8 -0.6 TJ = 25C V(BE)sat @ IC/IB = 10 V(BE)on @ VCE = -1.0 V -0.4 -0.2 0 -1.0 -1000 Figure 2. Current Gain Bandwidth Product C, CAPACITANCE (pF) -1.0 -100 IC, COLLECTOR CURRENT (mA) 120 80 Cib 40 V(CE)sat @ IC/IB = 10 Cob 0 -10 -100 -1000 IC, COLLECTOR CURRENT (mA) Cob Cib -5.0 -1.0 -1.0 -2.0 -1.5 -3.0 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Saturation and "ON" Voltages Figure 4. Capacitances http://onsemi.com 328 -2.0 -4.0 -2.5 -5.0 BCX56-10R1 Preferred Device NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-89 package, which is designed for medium power surface mount applications. * High Current: 1.0 Amp * Available in 7 inch/1000 unit Tape and Reel * Device Marking: BK http://onsemi.com MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter Voltage VCEO 80 Vdc Collector-Base Voltage VCBO 100 Vdc Emitter-Base Voltage VEBO 5 Vdc IC 1 Adc 1.56 13 0.67 5.0 Watts mW/C Watts mW/C TJ, Tstg -65 to 150 C Symbol Max Collector Current Total Power Dissipation @ TA = 25C Derate above 25C PD (Note 1.) (Note 2.) Operating and Storage Temperature Range COLLECTOR 2 BASE 1 EMITTER 3 MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Thermal Resistance Junction-to-Ambient (surface mounted) Maximum Temperature for Soldering Purposes Time in Solder Bath RJA (Note 1.) (Note 2.) Unit C/W 260 10 YM 2 3 BK SOT-89 CASE 1213 STYLE 2 80 190 TL 1 Y = Year Code M = Month Code BK = Device Code C Sec 1. FR-4 @ 1.0 X 1.0 inch Pad 2. FR-4 @ Minimum Pad ORDERING INFORMATION Device Package Shipping BCX56-10R1 SOT-89 1000/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 June, 2001 - Rev. 0 329 Publication Order Number: BCX56-10R1/D BCX56-10R1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristics Symbol Min Typ Max Unit Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0) V(BR)CBO 100 - - Vdc Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 80 - - Vdc Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO 5.0 - - Vdc Collector-Base Cutoff Current (VCB = 30 Vdc, IE = 0) ICBO - - 100 nAdc Emitter-Base Cutoff Current (VEB = 5.0 Vdc, IC = 0) IEBO - - 10 Adc 25 63 25 - - - - 160 - OFF CHARACTERISTICS ON CHARACTERISTICS (Note 3.) hFE DC Current Gain (IC = 5.0 mA, VCE = 2.0 V) (IC = 150 mA, VCE = 2.0 V) (IC = 500 mA, VCE = 2.0 V) - Collector-Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) VCE(sat) - - 0.5 Vdc Base-Emitter On Voltage (IC = 500 mAdc, VCE = 2.0 Vdc) VBE(on) - - 1.0 Vdc fT - 130 - MHz DYNAMIC CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc, f = 35 MHz) 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% TYPICAL ELECTRICAL CHARACTERISTICS hFE, DC CURRENT GAIN 1000 TJ = 125C TJ = 25C 100 10 TJ = -55C 1 10 100 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain http://onsemi.com 330 1000 BCX56-10R1 1000 80 60 C, CAPACITANCE (pF) f, T CURRENTGAIN BANDWIDTH PRODUCT (MHz TYPICAL ELECTRICAL CHARACTERISTICS 100 TJ = 25C 40 Cibo 20 10 8.0 6.0 10 1.0 10 100 IC, COLLECTOR CURRENT (mA) Cobo 4.0 0.1 1000 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 1.0 V, VOLTAGE (VOLTS) 0.8 TJ = 25C VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.5 1.0 2.0 5.0 10 20 50 100 IC, COLLECTOR CURRENT (mA) 200 500 1.0 TJ = 25C 0.8 0.6 200C 50 mA IC = 10mA 100mA 250mA 500mA 0.4 0.2 0 0.05 Figure 4. "On" Voltages 0.1 0.2 0.5 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 20 Figure 5. Collector Saturation Region STEP 1 PREHEAT ZONE 1 RAMP" STEP 2 STEP 3 VENT HEATING SOAK" ZONES 2 & 5 RAMP" DESIRED CURVE FOR HIGH MASS ASSEMBLIES 150C STEP 5 STEP 6 STEP 7 STEP 4 HEATING VENT COOLING HEATING ZONES 3 & 6 ZONES 4 & 7 205 TO SPIKE" SOAK" 219C 170C PEAK AT SOLDER 160C JOINT 150C 100C 100 Figure 3. Capacitance VCE , COLLECTOREMITTER VOLTAGE (VOLTS) Figure 2. Current-Gain - Bandwidth Product 50 140C 100C SOLDER IS LIQUID FOR 40 TO 80 SECONDS (DEPENDING ON MASS OF ASSEMBLY) DESIRED CURVE FOR LOW MASS ASSEMBLIES 50C TMAX TIME (3 TO 7 MINUTES TOTAL) Figure 6. Typical Solder Heating Profile http://onsemi.com 331 50 ON Semiconductor BF245A BF245B JFET VHF/UHF Amplifiers N-Channel -- Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDS 30 Vdc Drain-Gate Voltage VDG 30 Vdc Gate-Source Voltage VGS 30 Vdc Drain Current ID 100 mAdc Forward Gate Current IG(f) 10 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 350 2.8 mW mW/C Storage Channel Temperature Range Tstg -65 to +150 C 3 DRAIN 1 2 3 DRAIN 1 2 2 GATE STYLE 22 STYLE 23 3 BF245, BF245A, BF245B, BF245C CASE 29-11, STYLE 23 TO-92 (TO-226AA) 1 GATE 1 SOURCE 3 BF244A, BF244B CASE 29-11, STYLE 22 TO-92 (TO-226AA) 2 SOURCE ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)GSS 30 -- -- Vdc 0.4 0.4 1.6 3.2 -- -- -- -- 7.5 2.2 3.8 7.5 VGS(off) -0.5 -- -8.0 Vdc IGSS -- -- 5.0 nAdc 2.0 2.0 6.0 12 -- -- -- -- 25 6.5 15 25 OFF CHARACTERISTICS Gate-Source Breakdown Voltage (IG = 1.0 Adc, VDS = 0) Gate-Source (VDS = 15 Vdc, ID = 200 Adc) BF245(1) BF245A, BF245B, BF245C VGS BF244A(2) BF244B Gate-Source Cutoff Voltage (VDS = 15 Vdc, ID = 10 nAdc) Gate Reverse Current (VGS = 20 Vdc, VDS = 0) Vdc ON CHARACTERISTICS Zero-Gate-Voltage Drain Current (VDS = 15 Vdc, VGS = 0) BF245(1) BF245A, BF245B, BF245C IDSS BF244A(2) BF244B mAdc 1. On orders against the BF245, any or all subgroups might be shipped. 2. On orders against the BF244A, any or all subgroups might be shipped. Semiconductor Components Industries, LLC, 2001 June, 2001 - Rev. 0 332 Publication Order Number: BF245A/D BF245A BF245B ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit SMALL-SIGNAL CHARACTERISTICS Forward Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) Yfs 3.0 -- 6.5 mmhos Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) Yos -- 40 -- mhos Forward Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 200 MHz) Yfs -- 5.6 -- mmhos Reverse Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 200 MHz) Yrs -- 1.0 -- mmhos (VDS = 20 Vdc, -VGS = 1.0 Vdc) Ciss -- 3.0 -- pF Reverse Transfer Capacitance (VDS = 20 Vdc, -VGS = 1.0 Vdc, f = 1.0 MHz) Crss -- 0.7 -- pF Output Capacitance (VDS = 20 Vdc, -VGS = 1.0 Vdc, f = 1.0 MHz) Coss -- 0.9 -- pF (VDS = 15 Vdc, VGS = 0) F(Yfs) -- 700 -- MHz Input Capacitance Cut-off Frequency(3) 3. The frequency at which gfs is 0.7 of its value at 1 kHz. COMMON SOURCE CHARACTERISTICS 30 20 bis @ IDSS 10 7.0 5.0 3.0 gis @ IDSS 2.0 gis @ 0.25 IDSS 1.0 0.7 0.5 0.3 10 bis @ 0.25 IDSS 20 30 50 70 100 200 300 f, FREQUENCY (MHz) grs , REVERSE TRANSADMITTANCE (mmhos) brs , REVERSE SUSCEPTANCE (mmhos) gis, INPUT CONDUCTANCE (mmhos) bis, INPUT SUSCEPTANCE (mmhos) ADMITTANCE PARAMETERS (VDS = 15 Vdc, Tchannel = 25C) 500 700 1000 5.0 3.0 2.0 brs @ IDSS 1.0 0.7 0.5 0.25 IDSS 0.3 0.2 0.1 0.07 0.05 grs @ IDSS, 0.25 IDSS 10 20 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 10 10 7.0 5.0 gfs @ IDSS gfs @ 0.25 IDSS 3.0 2.0 1.0 0.7 0.5 0.3 0.2 10 30 Figure 2. Reverse Transfer Admittance (yrs) gos, OUTPUT ADMITTANCE (mhos) bos, OUTPUT SUSCEPTANCE (mhos) gfs, FORWARD TRANSCONDUCTANCE (mmhos) |b fs|, FORWARD SUSCEPTANCE (mmhos) Figure 1. Input Admittance (yis) 20 |bfs| @ IDSS 30 50 70 100 200 300 f, FREQUENCY (MHz) bos @ IDSS and 0.25 IDSS 2.0 1.0 0.5 0.2 gos @ IDSS 0.1 0.05 |bfs| @ 0.25 IDSS 20 5.0 gos @ 0.25 IDSS 0.02 500 700 1000 0.01 10 Figure 3. Forward Transadmittance (yfs) 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 7001000 Figure 4. Output Admittance (yos) http://onsemi.com 333 BF245A BF245B COMMON SOURCE CHARACTERISTICS S-PARAMETERS (VDS = 15 Vdc, Tchannel = 25C, Data Points in MHz) 30 20 10 0 1.0 40 350 340 400 300 0.8 320 40 310 50 20 10 0 350 340 330 0.4 300 200 0.9 30 32 200 100 50 330 ID = 0.25 IDSS 100 ID = IDSS 0.3 ID = IDSS, 0.25 IDSS 500 31 900 800 0.2 300 60 290 70 280 80 270 90 100 260 100 26 110 250 110 25 120 240 120 24 130 230 130 23 140 220 140 22 60 400 500 0.7 70 600 80 0.6 90 900 150 160 170 180 800 190 700 800 700 900 200 600 600 210 20 10 0 350 340 300 0.5 900 70 80 90 100 110 120 800 700 600 500 0.4 900 800 700 600 500 0.3 100 400 400 0.3 ID = 0.25 IDSS 300 200 0.4 100 0.5 300 ID = IDSS 200 28 0.0 200 27 100 150 330 0.6 60 29 160 170 180 190 200 210 Figure 6. S12s 40 50 0.1 500 400 Figure 5. S11s 30 30 700 130 30 20 10 0 350 340 330 100 200 I = 0.25 IDSS D 300 1.0 400 100 200 500 300 600 400 700 0.9 500 800 600 ID = IDSS 700 900 800 900 0.8 320 40 310 50 300 60 290 70 280 80 270 90 27 260 100 26 250 110 25 240 120 24 230 130 23 220 140 22 0.7 32 31 30 29 28 0.6 0.6 140 150 160 170 180 190 200 210 150 Figure 7. S21s 160 170 180 190 Figure 8. S22s http://onsemi.com 334 200 210 BF245A BF245B COMMON GATE CHARACTERISTICS ADMITTANCE PARAMETERS (VDG = 15 Vdc, Tchannel = 25C) 10 7.0 5.0 grg , REVERSE TRANSADMITTANCE (mmhos) brg , REVERSE SUSCEPTANCE (mmhos) gig, INPUT CONDUCTANCE (mmhos) big, INPUT SUSCEPTANCE (mmhos) 20 gig @ IDSS 3.0 grg @ 0.25 IDSS 2.0 1.0 0.7 0.5 big @ IDSS 0.3 0.2 10 20 30 big @ 0.25 IDSS 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 0.5 0.3 brg @ IDSS 0.2 0.1 0.07 0.05 0.25 IDSS 0.03 0.02 0.01 0.007 0.005 gig @ IDSS, 0.25 IDSS 10 10 7.0 5.0 gfg @ IDSS 3.0 gfg @ 0.25 IDSS 2.0 1.0 0.7 0.5 bfg @ IDSS 0.3 brg @ 0.25 IDSS 0.2 0.1 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 10. Reverse Transfer Admittance (yrg) gog, OUTPUT ADMITTANCE (mmhos) bog, OUTPUT SUSCEPTANCE (mmhos) gfg , FORWARD TRANSCONDUCTANCE (mmhos) bfg , FORWARD SUSCEPTANCE (mmhos) Figure 9. Input Admittance (yig) 20 500 700 1000 1.0 0.7 0.5 bog @ IDSS, 0.25 IDSS 0.3 0.2 0.1 0.07 0.05 gog @ IDSS 0.03 0.02 0.01 gog @ 0.25 IDSS 10 Figure 11. Forward Transfer Admittance (yfg) 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 12. Output Admittance (yog) http://onsemi.com 335 BF245A BF245B COMMON GATE CHARACTERISTICS S-PARAMETERS (VDS = 15 Vdc, Tchannel = 25C, Data Points in MHz) 30 20 10 0 350 340 0.7 40 100 100 200 200 0.5 300 300 60 ID = IDSS 0.4 70 400 700 400 500 310 50 300 60 290 70 280 80 600 900 260 100 110 250 110 120 240 120 130 230 130 140 30 20 180 190 0 350 100 600 ID = IDSS 700 600 700 800 29 28 0.0 27 26 ID = 0.25 IDSS 25 0.01 24 0.02 23 900 0.03 22 0.04 210 150 160 340 330 30 20 170 180 190 200 210 340 330 Figure 14. S12g 10 40 320 0 1.5 1.0 100 100 0.4 30 500 800 200 0.5 40 32 0.01 Figure 13. S11g 10 330 0.02 140 220 170 340 31 900 160 350 0.04 90 270 100 150 0 800 900 90 40 10 600 800 0.3 320 20 0.03 500 700 80 30 ID = 0.25 IDSS 0.6 50 330 350 300 200 400 32 700 600 800 0.9 ID = IDSS 500 900 31 310 50 300 60 290 70 280 80 270 90 27 260 100 26 110 250 110 25 120 240 120 24 130 230 130 23 140 220 140 22 50 100 0.3 60 0.2 70 80 ID = 0.25 IDSS 0.1 900 90 900 100 150 160 170 180 190 200 210 ID = IDSS, 0.25 IDSS 0.8 0.7 29 28 0.6 150 Figure 15. S21g 30 160 170 180 190 Figure 16. S22g http://onsemi.com 336 200 210 BF256A BF256A is a Preferred Device JFET - General Purpose N-Channel N-Channel Junction Field Effect Transistor designed for VHF and UHF applications. * * * * http://onsemi.com Low Cost TO-92 Type Package Forward Transfer Admittance, Yfs = 4.5 mmhos (Min) Transfer Capacitance - Crss = 0.7 (Typ) Power Gain at f = 800 MHz, Typ. = 11 dB 1 DRAIN 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDS 30 Vdc Drain-Gate Voltage VDG 30 Vdc Gate-Source Voltage VGS 30 Vdc Forward Gate Current IG(f) 10 mAdc Total Device Dissipation PD 360 2.88 mW mW/C -65 to +150 C @ TA = 25C Derate above 25C Operating and Storage Channel Temperature Range Tchannel, Tstg 2 SOURCE TO-92 CASE 29 STYLE 5 1 2 3 MARKING DIAGRAMS BF 256A YWW PD, MAXIMUM CONTINUOUS POWER DISSIPATION (mW) 500 Y WW = Year = Work Week 400 ORDERING INFORMATION 300 Device BF256A Package Shipping TO-92 5000 Units/Box 200 Preferred devices are recommended choices for future use and best overall value. 100 0 0 25 50 75 100 125 150 175 200 FREE AIR TEMPERATURE (C) Figure 1. Power Derating Curve Semiconductor Components Industries, LLC, 2001 September, 2001 - Rev. 3 337 Publication Order Number: BF256A/D BF256A ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (-IG = -1.0 Adc, VDS = 0) Gate-Source Breakdown Voltage -V(BR)GSS 30 - -- Vdc Gate-Source Voltage (VDS = 15 Vdc, ID = 200 A) -VGS 0.5 -- 7.5 Vdc Gate Reverse Current (-VGS = 20 Vdc, VDS = 0) -IGSS -- -- 5.0 nAdc (VDS = 15 Vdc, VGS = 0) IDSS 3.0 - 7.0 mAdc ON CHARACTERISTICS Zero-Gate-Voltage Drain Current (Note 1.) SMALL-SIGNAL CHARACTERISTICS Forward Transfer Admittance Reverse Transfer Capacitance Output Capacitance (VDS = 15 Vdc, VGS = 0, f = 1 kHz) |Yfs| 4.5 5.0 - mmhos (VDS = 20 Vdc, -VGS = 1 Vdc, f = 1 MHz) Crss - 0.7 - pF (VDS = 20 Vdc, VGS = 0, f = 1 MHz) Coss - 1.0 - pF fgfs - 1000 - MHz Cut-Off Frequency (Note 2.) (VDS = 15 Vdc, VGS = 0) 1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%. 10 5 9 4.5 ID, DRAIN CURRENT (mA) GATE-SOURCE CUTOFF VOLTAGE (-VGS(off) @ ID = 10 nA) 2. The frequency at which gfs is 0.7 of its value at 1 KHz. VDS = 15 Vdc 8 7 6 5 4 3 2 1 0 -VGS = 0 V 4 3.5 3 0.2 V 2.5 2 0.4 V 1.5 0.6 V 1 0.8 V 0.5 BF256A 0 0 5 10 15 20 25 0 2 4 6 8 10 12 14 16 18 IDSS, DRAIN CURRENT (mA) @ VGS = 0 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2. Correlation Between -VGS(off) and IDSS Figure 3. Drain Current versus Drain-to-Source Voltage http://onsemi.com 338 20 gfs, FORWARD TRANSCONDUCTANCE (mmhos) VDS = 15 Vdc VGS = 0 Yis = gis + jbis bis 1 10 1 0.1 -gis 0.1 1000 0.01 10 100 VDS = 15 Vdc VGS = 0 Yfs = gfs - jbfs 10 10 gfs -bfs 1 1 0.1 1000 0.1 10 100 Figure 4. Input Admittance versus Frequency Figure 5. Forward Transfer Admittance versus Frequency 10 VDS = 15 Vdc VGS = 0 Yrs = -grs - jbrs 0.1 1 -brs -grs 0.1 0.01 0.01 10 100 1 10 VDS = 15 Vdc VGS = 0 Yos = gos + jbos gos 0.1 1 bos 0.1 0.01 0.01 1000 0.001 1000 10 100 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 6. Reverse Transfer Admittance versus Frequency Figure 7. Output Admittance versus Frequency 5 bos, OUTPUT SUSCEPTANCE (mmhos) 1 gos, OUTPUT CONDUCTANCE (mmhos) f, FREQUENCY (MHz) 0.001 1.0 Crss, REVERSE TRANSFER CAPACITANCE (pF) Ciss, INPUT CAPACITANCE (pF) 100 f, FREQUENCY (MHz) -brs, REVERSE SUSCEPTANCE (mmhos) -grs, REVERSE TRANSCONDUCTANCE (mmhos) 100 100 -bfs, FORWARD SUSCEPTANCE (mmhos) 10 bis, INPUT SUSCEPTANCE (mmhos) gis, INPUT CONDUCTANCE (mmhos) BF256A VDS = 20 Vdc f = 1 MHz 4 3 2 1 0 0.5 VDS = 20 Vdc f = 1 MHz 0 0 1 2 3 4 5 6 7 8 9 0 10 2 4 6 8 -VGS, GATE-SOURCE VOLTAGE (VOLTS) -VGS, GATE-SOURCE VOLTAGE (VOLTS) Figure 8. Input Capacitance versus Gate-Source Voltage Figure 9. Reverse Transfer Capacitance versus Gate-Source Voltage http://onsemi.com 339 10 ON Semiconductor High Voltage Transistor BF393 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 300 Vdc Collector-Base Voltage VCBO 300 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current -- Continuous IC 500 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watts mW/C TJ, Tstg -55 to +150 C Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W Operating and Storage Junction Temperature Range 1 2 3 CASE 29-04, STYLE 1 TO-92 (TO-226AA) THERMAL CHARACTERISTICS Characteristic ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB =0) V(BR)CEO Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0) V(BR)CBO Emitter-Base Breakdown Voltage (IE = 100 Adc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 200 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) IEBO Vdc 300 -- 300 -- 6.0 -- -- 0.1 -- 0.1 COLLECTOR 3 2 BASE 1 EMITTER Vdc Vdc Adc Adc 1. Pulse Test: Pulse Width 300 s; Duty Cycle 2.0%. Semiconductor Components Industries, LLC, 2001 February, 2001 - Rev. 1 340 Publication Order Number: BF393/D BF393 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Characteristic Min Max 25 40 -- -- -- 2.0 -- 2.0 50 -- -- 2.0 Unit ON CHARACTERISTICS DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) hFE Collector-Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) VCE(sat) Base-Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) VBE(sat) -- Vdc Vdc SMALL-SIGNAL CHARACTERISTICS CurrentGain -- Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz) fT Common Emitter Feedback Capacitance (VCB = 60 Vdc, IE = 0, f = 1.0 MHz) MHz Cre http://onsemi.com 341 pF BF393 hFE, DC CURRENT GAIN 200 VCE = 10 Vdc TJ = +125C 100 25C 50 -55C 30 20 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 20 30 50 100 70 100 C, CAPACITANCE (pF) 50 Ceb 20 10 5.0 Ccb 2.0 1.0 0.2 0.5 1.0 2.0 5.0 10 20 50 VR, REVERSE VOLTAGE (VOLTS) 100 200 f, T CURRENT-GAIN BANDWIDTH PRODUCT (MHz) Figure 1. DC Current Gain 100 70 50 30 20 10 1.0 Figure 2. Capacitances 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 500 IC, COLLECTOR CURRENT (mA) TJ = 25C 1.2 V, VOLTAGE (VOLTS) 2.0 1.0 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 10 V 0.4 0.2 2.0 200 5.0 3.0 70 100 CURRENT LIMIT THERMAL LIMIT (PULSE CURVES @ TC = 25C) SECOND BREAKDOWN LIMIT 10 0.5 0.5 50 100 ms 20 1.0 1.0 ms TC = 25C 50 2.0 10 s 100 s TA = 25C 100 VCE(sat) @ IC/IB = 10 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 70 100 Figure 3. Current-Gain -- Bandwidth Product 1.4 0 1.0 TJ = 25C VCE = 20 V f = 20 MHz CURVES APPLY BELOW RATED VCEO 1.0 2.0 5.0 10 20 MPSA43 MPSA42 50 100 200 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 4. "On" Voltages Figure 5. Maximum Forward Bias Safe Operating Area http://onsemi.com 342 500 ON Semiconductor High Voltage Transistors BF422 NPN Silicon MAXIMUM RATINGS Rating Symbol BF422 Unit Collector-Emitter Voltage VCEO 250 Vdc Collector-Base Voltage VCBO 250 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector Current -- Continuous IC 500 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watts mW/C TJ, Tstg -55 to +150 C Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W Operating and Storage Junction Temperature Range 1 2 3 CASE 29-11, STYLE 14 TO-92 (TO-226AA) THERMAL CHARACTERISTICS Characteristic COLLECTOR 2 3 BASE 1 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max 250 -- 250 -- 5.0 -- -- -- -- -- Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0) V(BR)CBO Emitter-Base Breakdown Voltage (IE = 100 Adc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 200 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) IEBO Vdc Vdc Vdc Adc nAdc 1. Pulse Test: Pulse Width 300 s; Duty Cycle 2.0%. Semiconductor Components Industries, LLC, 2001 June, 2001 - Rev. 0 343 Publication Order Number: BF422/D BF422 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Characteristic Min Max 50 -- -- 0.5 -- 2.0 60 -- -- 1.6 Unit ON CHARACTERISTICS DC Current Gain (IC = 25 mAdc, VCE = 20 Vdc)BF422 hFE Collector-Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) VCE(sat) Base-Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) VBE(sat) -- Vdc Vdc SMALL-SIGNAL CHARACTERISTICS CurrentGain -- Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz) fT Common Emitter Feedback Capacitance (VCB = 30 Vdc, IE = 0, f = 1.0 MHz) MHz Cre Figure 6. http://onsemi.com 344 pF BF422 120 hFE , DC CURRENT GAIN VCE = 10 Vdc TJ = +125C 100 80 25C 60 40 -55C 20 0 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain f, T CURRENT-GAIN BANDWIDTH (MHz) 100 C, CAPACITANCE (pF) Ceb @ 1MHz 10 1.0 0.1 0.1 Ccb @ 1MHz 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) 1000 80 70 60 50 40 30 TJ = 25C VCE = 20 V f = 20 MHz 20 10 1.0 Figure 2. Capacitance 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 3. Current-Gain - Bandwidth 1.4 V, VOLTAGE (VOLTS) 1.2 VCE(sat) @ 25C, IC/IB = 10 VCE(sat) @ 125C, IC/IB = 10 VCE(sat) @ -55C, IC/IB = 10 VBE(sat) @ 25C, IC/IB = 10 1.0 0.8 VBE(sat) @ 125C, IC/IB = 10 0.6 VBE(sat) @ -55C, IC/IB = 10 VBE(on) @ 25C, VCE = 10 V VBE(on) @ 125C, VCE = 10 V VBE(on) @ -55C, VCE = 10 V 0.4 0.2 0.0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100 Figure 4. "ON" Voltages http://onsemi.com 345 ON Semiconductor High Voltage Transistors BF423 PNP Silicon MAXIMUM RATINGS Rating Symbol BF423 Unit Collector-Emitter Voltage VCEO -250 Vdc Collector-Base Voltage VCBO -250 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current -- Continuous IC -500 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watts mW/C TJ, Tstg -55 to +150 C Operating and Storage Junction Temperature Range 1 2 CASE 29-11, STYLE 14 TO-92 (TO-226AA) COLLECTOR 2 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W 3 BASE 1 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Characteristic 3 Min Max -250 -- -250 -- -5.0 -- -- -- -- -- Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (1) (IC = -1.0 mAdc, IB = 0) V(BR)CEO Collector-Base Breakdown Voltage (IC = -100 Adc, IE = 0) V(BR)CBO Emitter-Base Breakdown Voltage (IE = -100 Adc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = -200 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = -5.0 Vdc, IC = 0) IEBO Vdc Vdc Vdc Adc nAdc 1. Pulse Test: Pulse Width 300 s; Duty Cycle 2.0%. Semiconductor Components Industries, LLC, 2001 June, 2001 - Rev. 0 346 Publication Order Number: BF423/D BF423 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Characteristic Min Max 50 -- Unit ON CHARACTERISTICS DC Current Gain (IC = -25 mA, VCE = -20 Vdc) hFE -- Collector-Emitter Saturation Voltage (IC = -20 mAdc, IB = -2.0 mAdc) VCE(sat) -- -0.5 Vdc Base-Emitter Saturation Voltage (IC = -20 mA, IB = -2.0 mA) VBE(sat) -- -2.0 Vdc fT 60 -- MHz Cre -- 2.8 pF SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = -10 mAdc, VCE = -10 Vdc, f = 20 MHz) Common Emitter Feedback Capacitance (VCB = -30 Vdc, IE = 0, f = 1.0 MHz) Figure 5. http://onsemi.com 347 BF423 300 hFE , DC CURRENT GAIN VCE = 10 Vdc TJ = +125C 250 200 25C 150 -55C 100 50 0 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) C, CAPACITANCE (pF) 100 f, T CURRENT-GAIN BANDWIDTH (MHz) Figure 1. DC Current Gain Cib @ 1MHz 10 Ccb @ 1MHz 1.0 0.1 0.1 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) 150 130 110 90 70 50 30 10 1000 TJ = 25C VCE = 20 Vdc F = 20 MHz 1 Figure 2. Capacitance 3 5 11 13 15 7 9 IC, COLLECTOR CURRENT (mA) 17 19 21 Figure 3. Current-Gain -- Bandwidth 1.4 V, VOLTAGE (VOLTS) 1.2 VCE(sat) @ 25C, IC/IB = 10 VCE(sat) @ 125C, IC/IB = 10 VCE(sat) @ -55C, IC/IB = 10 VBE(sat) @ 25C, IC/IB = 10 1.0 0.8 VBE(sat) @ 125C, IC/IB = 10 VBE(sat) @ -55C, IC/IB = 10 VBE(on) @ 25C, VCE = 10 V VBE(on) @ 125C, VCE = 10 V VBE(on) @ -55C, VCE = 10 V 0.6 0.4 0.2 0.0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100 Figure 4. "ON" Voltages http://onsemi.com 348 ON Semiconductor BF493S High Voltage Transistor PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO -350 Vdc Collector-Base Voltage VCBO -350 Vdc Emitter-Base Voltage VEBO -6.0 Vdc Collector Current -- Continuous IC -500 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 Watts mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watts mW/C TJ, Tstg -55 to +150 C Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W Operating and Storage Junction Temperature Range 1 2 CASE 29-04, STYLE 1 TO-92 (TO-226AA) COLLECTOR 3 THERMAL CHARACTERISTICS Characteristic 3 2 BASE 1 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage (1) (IC = -1.0 mAdc, IB = 0) V(BR)CEO -350 -- Vdc Collector-Base Breakdown Voltage (IC = -100 Adc, IE = 0) V(BR)CBO -350 -- Vdc Emitter-Base Breakdown Voltage (IE = -100 Adc, IC = 0) V(BR)EBO -6.0 -- Vdc Collector Cutoff Current (VCE = -250 Vdc) ICES -- -10 nAdc Emitter Cutoff Current (VEB = -6.0 Vdc, IC = 0) IEBO -- 0.1 Adc Collector Cutoff Current (VCB = -250 Vdc, IE = 0, TA = 25C) (VCB = -250 Vdc, IE = 0, TA = 100C) ICBO -- -- -0.005 -1.0 OFF CHARACTERISTICS Adc 1. Pulse Test: Pulse Width 300 s; Duty Cycle 2.0%. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 349 Publication Order Number: BF493S/D BF493S ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Characteristic Min Max 25 40 -- -- Unit ON CHARACTERISTICS DC Current Gain (IC = -1.0 mAdc, VCE = -10 Vdc) (IC = -10 mAdc, VCE = -10 Vdc) hFE -- Collector-Emitter Saturation Voltage (IC = -20 mAdc, IB = -2.0 mAdc) VCE(sat) -- -2.0 Vdc Base-Emitter On Voltage (IC = -20 mA, IB = -2.0 mA) VBE(sat) -- -2.0 Vdc fT 50 -- MHz Cre -- 1.6 pF DYNAMIC CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = -10 mAdc, VCE = -20 Vdc, f = 20 MHz) Common-Emitter Feedback Capacitance (VCB = -100 Vdc, IE = 0, f = 1.0 MHz) http://onsemi.com 350 BF493S 150 TJ = +125C VCE = -10 Vdc hFE, DC CURRENT GAIN 100 +25C 70 -55C 50 30 20 15 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -80 -100 IC, COLLECTOR CURRENT (mA) 100 C, CAPACITANCE (pF) 50 Cib 20 10 5.0 2.0 Ccb 1.0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -1000 VR, REVERSE VOLTAGE (VOLTS) f, T CURRENT-GAIN BANDWIDTH PRODUCT (MHz) Figure 1. DC Current Gain 100 60 40 30 20 0 -1.0 Figure 2. Capacitances -5.0 -10 -20 IC, COLLECTOR CURRENT (mA) -50 IC, COLLECTOR CURRENT (mA) -500 -0.8 V, VOLTAGE (VOLTS) -2.0 VBE @ VCE = -10 V -0.6 -0.4 -0.2 VCE(sat) @ IC/IB = 10 mA -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mA) -100 Figure 3. Current-Gain -- Bandwidth Product -1.0 0 -1.0 TJ = 25C VCE = -20 Vdc 80 -50 1.0 s -200 Figure 4. "On" Voltages 100 s -100 -50 -20 MPSA93 1.5 WATT THERMAL LIMITATION @ TC = 25C 625 mW THERMAL LIMITATION @ TA = 25C -10 -5.0 -3.0 -100 1.0 ms MPSA92 BONDING WIRE LIMITATION SECOND BREAKDOWN LIMITATION TJ = 150C -5.0 -100 -200 -300 -10 -20 -30 -50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. Active Region -- Safe Operating Area http://onsemi.com 351 ON Semiconductor BF720T1 NPN Silicon Transistor ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 300 Vdc Collector-Base Voltage VCBO 300 Vdc Collector-Emitter Voltage VCER 300 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector Current IC 100 mAdc Total Power Dissipation up to TA = 25C PD 1.5 Watts Storage Temperature Range Tstg -65 to +150 C Junction Temperature TJ 150 C Symbol Max Unit RJA 83.3 C/W NPN SILICON TRANSISTOR SURFACE MOUNT 4 1 2 3 CASE 318E-04, STYLE 1 SOT-223 (TO-261AA) DEVICE MARKING DC THERMAL CHARACTERISTICS Characteristic Thermal Resistance from Junction-to-Ambient(1) COLLECTOR 2,4 BASE 1 EMITTER 3 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristics Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 300 -- Vdc Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0) V(BR)CBO 300 -- Vdc Collector-Emitter Breakdown Voltage (IC = 100 Adc, RBE = 2.7 k) V(BR)CER 300 -- Vdc Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO 5.0 -- Vdc Collector-Base Cutoff Current (VCB = 200 Vdc, IE = 0) ICBO -- 10 nAdc Collector-Emitter Cutoff Current (VCE = 250 Vdc, RBE = 2.7 k) (VCE = 200 Vdc, RBE = 2.7 k, TJ = 150C) ICER -- -- 50 10 nAdc Adc OFF CHARACTERISTICS 1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 in2. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 4 352 Publication Order Number: BF720T1/D BF720T1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit hFE 50 -- -- VCE(sat) -- 0.6 Vdc fT 60 -- MHz Cre -- 1.6 pF ON CHARACTERISTICS DC Current Gain (IC = 25 mAdc, VCE = 20 Vdc) Collector-Emitter Saturation Voltage (IC = 30 mAdc, IB = 5.0 mAdc) DYNAMIC CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 35 MHz) Feedback Capacitance (VCE = 30 Vdc, IC = 0, f = 1.0 MHz) Figure 6. http://onsemi.com 353 BF720T1 120 hFE , DC CURRENT GAIN VCE = 10 Vdc TJ = +125C 100 80 25C 60 40 -55C 20 0 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain f, T CURRENT-GAIN BANDWIDTH (MHz) 100 C, CAPACITANCE (pF) Ceb @ 1MHz 10 1.0 0.1 0.1 Ccb @ 1MHz 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) 1000 80 70 60 50 40 30 TJ = 25C VCE = 20 V f = 20 MHz 20 10 1.0 Figure 2. Capacitance 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 3. Current-Gain - Bandwidth 1.4 V, VOLTAGE (VOLTS) 1.2 VCE(sat) @ 25C, IC/IB = 10 VCE(sat) @ 125C, IC/IB = 10 VCE(sat) @ -55C, IC/IB = 10 VBE(sat) @ 25C, IC/IB = 10 1.0 0.8 VBE(sat) @ 125C, IC/IB = 10 0.6 VBE(sat) @ -55C, IC/IB = 10 VBE(on) @ 25C, VCE = 10 V VBE(on) @ 125C, VCE = 10 V VBE(on) @ -55C, VCE = 10 V 0.4 0.2 0.0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100 Figure 4. "ON" Voltages http://onsemi.com 354 ON Semiconductor BF721T1 PNP Silicon Transistor ON Semiconductors Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO -300 Vdc Collector-Base Voltage VCBO -300 Vdc Collector-Emitter Voltage VCER -300 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current IC -100 mAdc Total Power Dissipation up to TA = 25C(1) PD 1.5 Watts Storage Temperature Range Tstg -65 to +150 C Junction Temperature TJ 150 C PNP SILICON TRANSISTOR SURFACE MOUNT 4 1 2 3 CASE 318E-04, STYLE 1 SOT-223 (TO-261AA) DEVICE MARKING DF THERMAL CHARACTERISTICS Characteristic COLLECTOR 2,4 Symbol Max Unit RJA 83.3 C/W Thermal Resistance from Junction to Ambient(1) BASE 1 EMITTER 3 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC = -1.0 mAdc, IB = 0) V(BR)CEO -300 -- Vdc Collector-Base Breakdown Voltage (IC = -100 Adc, IE = 0) V(BR)CBO -300 -- Vdc Collector-Emitter Breakdown Voltage (IC = -100 Adc, RBE = 2.7 k) V(BR)CER -300 -- Vdc Emitter-Base Breakdown Voltage (IE = -10 Adc, IC = 0) V(BR)EBO -5.0 -- Vdc Collector-Base Cutoff Current (VCB = -200 Vdc, IE = 0) ICBO -- -10 nAdc Collector-Emitter Cutoff Current (VCE = -250 Vdc, RBE = 2.7 k) (VCE = -200 Vdc, RBE = 2.7 k, TJ = 150C) ICER -- -- -50 -10 nAdc Adc OFF CHARACTERISTICS 1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 in2. Preferred devices are ON Semiconductors recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 5 355 Publication Order Number: BF721T1/D BF721T1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit DC Current Gain (VCE = -25 mAdc, VCE = -20 Vdc) hFE 50 -- -- Collector-Emitter Saturation Voltage (IC = -30 mAdc, IB = -5.0 mAdc) VCE(sat) -- -0.8 Vdc fT 60 -- MHz Cre -- 1.6 pF ON CHARACTERISTICS DYNAMIC CHARACTERISTICS Current-Gain -- Bandwidth Product (VCE = -10 Vdc, IC = -10 mAdc, f = 35 MHz) Feedback Capacitance (VCE = -30 Vdc, IC = 0, f = 1.0 MHz) Figure 5. http://onsemi.com 356 BF721T1 300 hFE , DC CURRENT GAIN VCE = 10 Vdc TJ = +125C 250 200 25C 150 -55C 100 50 0 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) C, CAPACITANCE (pF) 100 f, T CURRENT-GAIN BANDWIDTH (MHz) Figure 1. DC Current Gain Cib @ 1MHz 10 Ccb @ 1MHz 1.0 0.1 0.1 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) 150 130 110 90 70 50 30 10 1000 TJ = 25C VCE = 20 Vdc F = 20 MHz 1 Figure 2. Capacitance 3 5 11 13 15 7 9 IC, COLLECTOR CURRENT (mA) 17 19 21 Figure 3. Current-Gain -- Bandwidth 1.4 V, VOLTAGE (VOLTS) 1.2 VCE(sat) @ 25C, IC/IB = 10 VCE(sat) @ 125C, IC/IB = 10 VCE(sat) @ -55C, IC/IB = 10 VBE(sat) @ 25C, IC/IB = 10 1.0 0.8 VBE(sat) @ 125C, IC/IB = 10 VBE(sat) @ -55C, IC/IB = 10 VBE(on) @ 25C, VCE = 10 V VBE(on) @ 125C, VCE = 10 V VBE(on) @ -55C, VCE = 10 V 0.6 0.4 0.2 0.0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100 Figure 4. "ON" Voltages http://onsemi.com 357 BF959 VHF Transistor NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 20 Vdc Collector-Base Voltage VCBO 30 Vdc Emitter-Base Voltage VEBO 3.0 Vdc Collector Current - Continuous IC 100 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watts mW/C -55 to +150 C Operating and Storage Junction Temperature Range TJ, Tstg COLLECTOR 1 3 BASE 2 EMITTER 1 2 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W 3 TO-92 CASE 29 STYLE 21 MARKING DIAGRAM BF 959 YWW Y W = Year = Work Week ORDERING INFORMATION Device Semiconductor Components Industries, LLC, 2001 October, 2001 - Rev. 2 358 Package Shipping BF959 TO-92 5000 Units/Box BF959ZL1 TO-92 2000/Ammo Pack BF959RL1 TO-92 2000 Units/Box Publication Order Number: BF959/D BF959 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 20 - - Vdc Collector-Base Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO 30 - - Vdc Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO 3.0 - - Vdc ICBO - - 100 nAdc 35 40 - - - - OFF CHARACTERISTICS Collector Cutoff Current (VCB = 20 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (IC = 5.0 mAdc, VCE = 10 Vdc) (IC = 20 mAdc, VCE = 10 Vdc) hFE - Collector-Emitter Saturation Voltage (IC = 30 mAdc, IB = 2.0 mAdc) VCE(sat) - - 1.0 Vdc Base-Emitter Saturation Voltage (IC = 30 mAdc, IB = 2.0 mAdc) VBE(sat) - - 1.0 Vdc 700 600 - - - - SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) (IC = 30 mAdc, VCE = 10 Vdc, f = 100 MHz) fT MHz Common Emitter Feedback Capacitance (VCB = 10 Vdc, Pf = 0, f = 10 MHz) Cre - 0.65 - pF Noise Figure (IC = 4.0 mA, VCE = 10 V, RS = 50 , f = 200 MHz) Nf - 3.0 - dB http://onsemi.com 359 BF959 500 1000 200 200 100 100 mV hFE , DC CURRENT GAIN 500 50 40 30 50 40 30 20 20 1 2 3 4 5 10 20 30 50 10 100 1.6 1.6 1.4 1.4 1.2 1 0.8 2V 0.6 3 4 5 10 20 10 V 5V 20 30 40 50 1.2 0.8 100 Cre 1 2 3 4 5 10 20 30 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Current-Gain - Bandwidth Product Figure 4. Capacitances b22e 300 200 Y22e ( s) VCE = 10 V 2 50 Cob IC, COLLECTOR CURRENT (mA) g11e 50 0.6 0.2 100 30 Cib 1 500 5 4 3 Y11e (ms) 10 0.4 10 b11e 1 0.5 0.4 0.3 g22e VCE = 10 V 100 50 40 30 20 0.2 0.1 4 5 Figure 2. VCE(sat) at IC/IB = 10 1.8 2 3 Figure 1. hFE at 10 V 1.8 1 2 IC, COLLECTOR CURRENT (mA) 2.0 0.4 1 IC, COLLECTOR CURRENT (mA) C, CAPACITANCE (pF) f, T CURRENT-GAIN BANDWIDTH PRODUCT (GHz) 10 1 2 3 4 5 10 20 30 50 100 10 1 2 3 4 5 10 20 30 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Input Impedance at 30 MHz Figure 6. Output Impedance at 30 MHz http://onsemi.com 360 50 ON Semiconductor BFR30LT1 BFR31LT1 JFET Amplifiers N-Channel 2 SOURCE 3 3 GATE 1 1 DRAIN 2 CASE 318-08, STYLE 10 SOT-23 (TO-236AB) MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDS 25 Vdc Gate-Source Voltage VGS 25 Vdc Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W PD 300 mW 2.4 mW/C RJA 417 C/W TJ, Tstg -55 to +150 C THERMAL CHARACTERISTICS Characteristic Dissipation(1) Total Device TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature DEVICE MARKING BFR30LT1 = M1; BFR31LT1 = M2 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit IGSS -- 0.2 nAdc OFF CHARACTERISTICS Gate Reverse Current (VGS = 10 Vdc, VDS = 0) Gate Source Cutoff Voltage (ID = 0.5 nAdc, VDS = 10 Vdc) BFR30 BFR31 VGS(OFF) -- -- 5.0 2.5 Vdc Gate Source Voltage (ID = 1.0 mAdc, VDS = 10 Vdc) BFR30 BFR31 BFR30 BFR31 VGS -0.7 -- -- -- -3.0 -1.3 -4.0 -2.0 Vdc (ID = 50 Adc, VDS = 10 Vdc) 1. Device mounted on FR4 glass epoxy printed circuit board using the recommended footprint. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 361 Publication Order Number: BFR30LT1/D BFR30LT1 BFR31LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit IDSS 4.0 1.0 10 5.0 mAdc 1.0 1.5 0.5 0.75 4.0 4.5 -- -- 40 20 25 15 ON CHARACTERISTICS Zero-Gate-Voltage Drain Current (VDS = 10 Vdc, VGS = 0) BFR30 BFR31 SMALL-SIGNAL CHARACTERISTICS yfs Forward Transconductance (ID = 1.0 mAdc, VDS = 10 Vdc, f = 1.0 kHz) BFR30 BFR31 BFR30 BFR31 (ID = 200 Adc, VDS = 10 Vdc, f = 1.0 kHz) mAdc yos Output Admittance (ID = 1.0 mAdc, VDS = 10 Vdc, f = 1.0 kHz) (ID = 200 Adc, VDS = 10 Vdc) BFR30 BFR31 Adc Input Capacitance (ID = 1.0 mAdc, VDS = 10 Vdc, f = 1.0 MHz) (ID = 200 Adc, VDS = 10 Vdc, f = 1.0 MHz) Ciss -- -- 5.0 4.0 pF Reverse Transfer Capacitance (ID = 1.0 mAdc, VDS = 10 Vdc, f = 1.0 MHz) (ID = 200 Adc, VDS = 10 Vdc, f = 1.0 MHz) Crss -- -- 1.5 1.5 pF TYPICAL CHARACTERISTICS 14 VDS = 15 V VGS = 0 RS = 1 M 4 3 2 1 0 VDS = 15 V VGS = 0 f = 1 kHz 12 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 5 10 8 6 4 2 0.01 0.1 1.0 f, FREQUENCY (kHz) 0 100 10 0.001 Figure 1. Noise Figure versus Frequency VGS(off) -1.2 V 1.2 VGS = 0 V 1.0 -0.2 V 0.8 0.6 -0.4 V 0.4 -0.6 V 0 0 25 5 10 15 20 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) VGS(off) -1.2 V 1.0 0.8 VDS = 15 V 0.6 0.4 0.2 -0.8 V -1.0 V 0.2 10 Figure 2. Noise Figure versus Source Resistance I D , DRAIN CURRENT (mA) I D , DRAIN CURRENT (mA) 1.2 0.01 0.1 1.0 RS, SOURCE RESISTANCE (Megohms) 0 -1.2 Figure 3. Typical Drain Characteristics -0.8 -0.4 VGS, GATE-SOURCE VOLTAGE (VOLTS) Figure 4. Common Source Transfer Characteristics http://onsemi.com 362 0 BFR30LT1 BFR31LT1 TYPICAL CHARACTERISTICS 5 VGS = 0 V VGS(off) -3.5 V 4 I D , DRAIN CURRENT (mA) I D , DRAIN CURRENT (mA) 5 VGS(off) -3.5 V 3 -1 V 2 -2 V 1 4 3 VDS = 15 V 2 1 -3 V 0 0 5 10 15 20 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 0 -5 25 Figure 5. Typical Drain Characteristics 10 VGS(off) -5.8 V I D , DRAIN CURRENT (mA) I D , DRAIN CURRENT (mA) VGS = 0 V -1 V 6 -2 V 4 -3 V 2 0 -4 V -5 V 0 5 10 15 20 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 0 Figure 6. Common Source Transfer Characteristics 10 8 -3 -2 -1 -4 VGS, GATE-SOURCE VOLTAGE (VOLTS) 25 VGS(off) -5.8 V 8 6 VDS = 15 V 4 2 0 -7 Figure 7. Typical Drain Characteristics -6 -5 -4 -3 -2 VGS, GATE-SOURCE VOLTAGE (VOLTS) -1 Figure 8. Common Source Transfer Characteristics Note: Graphical data is presented for dc conditions. Tabular data is given for pulsed conditions (Pulse Width = 630 ms, Duty Cycle = 10%). Under dc conditions, self heating in higher IDSS units reduces IDSS. http://onsemi.com 363 0 ON Semiconductor BSP16T1 SOT-223 Package High Voltage Transistor ON Semiconductor Preferred Device PNP Silicon SOT-223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO -300 Vdc Collector-Base Voltage VCBO -350 Vdc Emitter-Base Voltage VEBO -6.0 Vdc IC -1000 mAdc IB -500 mAdc PD 1.5 Watts Storage Temperature Range Tstg -65 to +150 C Junction Temperature TJ 150 C Symbol Max Unit RJA 83.3 C/W Collector Current Base Current Total Device Dissipation, TA = 25C (1) 4 1 2 3 CASE 318E-04, STYLE 1 TO-261AA DEVICE MARKING BT2 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient COLLECTOR 2,4 BASE 1 EMITTER 3 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Characteristic Min Max -300 -- -300 -- -- -50 -- -1.0 -- -20 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = -50 mAdc, IB = 0, L = 25 mH) V(BR)CEO Collector-Base Breakdown Voltage (IC = -100 Adc, IE = 0) V(BR)CBO Collector-Emitter Cutoff Current (VCE = -250 Vdc, IB = 0) ICES Collector-Base Cutoff Current (VCB = -280 Vdc, IE = 0) ICBO Emitter-Base Cutoff Current (VEB = -6.0 Vdc, IC = 0) IEBO Vdc Vdc Adc Adc Adc 1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 3 364 Publication Order Number: BSP16T1/D BSP16T1 ELECTRICAL CHARACTERISTICS (continued) (TA = 25C unless otherwise noted) Characteristics Symbol Min Max 30 120 -- -2.0 15 -- -- 15 Unit ON CHARACTERISTICS DC Current Gain (VCE = -10 Vdc, IC = -50 mAdc) hFE Collector-Emitter Saturation Voltage (IC = -50 mAdc, IB = -5.0 mAdc) VCE(sat) -- Vdc DYNAMIC CHARACTERISTICS Current Gain - Bandwidth Product (VCE = -10 Vdc, IC = -10 mAdc, f = 30 MHz) fT Collector-Base Capacitance (VCB = -10 Vdc, IE = 0, f = 1.0 MHz) MHz Cobo http://onsemi.com 365 pF ON Semiconductor NPN Silicon Epitaxial Transistor BSP19AT1 ON Semiconductor Preferred Device This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. * High Voltage: V(BR)CEO of 250 and 350 Volts. * The SOT-223 package can be soldered using wave or reflow. * SOT-223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die * Available in 12 mm Tape and Reel COLLECTOR 2,4 T1 Configuration - 7 inch/1000 unit reel T3 Configuration - 13 inch/4000 unit reel BASE * PNP Complement is BSP16T1 1 SOT-223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT 4 1 2 3 CASE 318E-04, STYLE 1 TO-261AA EMITTER 3 MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter Voltage (Open Base) VCEO 350 Vdc Collector-Base Voltage (Open Emitter) VCBO 400 Vdc Emitter-Base Voltage (Open Collector) VEBO 5.0 Vdc Collector Current (DC) IC 1000 mAdc Total Power Dissipation @ TA = 25C(1) Derate above 25C PD 0.8 6.4 Watts mW/C Storage Temperature Range Tstg -65 to 150 C Junction Temperature TJ 150 C Symbol Max Unit Thermal Resistance from Junction-to-Ambient RJA 156 C/W Maximum Temperature for Soldering Purposes Time in Solder Bath TL 260 10 C Sec DEVICE MARKING SP19A THERMAL CHARACTERISTICS Characteristic 1. Device mounted on a FR-4 glass epoxy printed circuit board using minimum recommended footprint. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 3 366 Publication Order Number: BSP19AT1/D BSP19AT1 ELECTRICAL CHARACTERISTICS (continued) (TA = 25C unless otherwise noted) Characteristics Symbol Min Max 350 -- -- 20 -- 10 40 -- 70 -- -- 0.5 -- 1.3 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO Collector-Base Cutoff Current (VCB = 400 Vdc, IE = 0) ICBO Emitter-Base Cutoff Current (VEB = 5.0 Vdc, IC = 0) IEBO Vdc nAdc Adc ON CHARACTERISTICS (2) DC Current Gain (IC = 20 mAdc, VCE = 10 Vdc) hFE Current-Gain -- Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 5.0 MHz) -- fT Collector-Emitter Saturation Voltage (IC = 50 mAdc, IB = 4.0 mAdc) VCE(sat) Base-Emitter Saturation Voltage (IC = 50 mAdc, IB = 4.0 mAdc) VBE(sat) 2. Pulse Test: Pulse Width 300 s, Duty Cycle = 2.0% http://onsemi.com 367 MHz Vdc Vdc BSP52T1 Preferred Device NPN Small-Signal Darlington Transistor This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications. * The SOT-223 Package can be soldered using wave or reflow. The * * formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die Available in 12 mm Tape and Reel Use BSP52T1 to order the 7 inch/1000 unit reel PNP Complement is BSP62T1 http://onsemi.com MEDIUM POWER NPN SILICON SURFACE MOUNT DARLINGTON TRANSISTOR COLLECTOR 2,4 BASE 1 MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Symbol Max Unit Collector-Emitter Voltage VCES 80 Vdc Collector-Base Voltage VCBO 90 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector Current IC 1.0 Adc Total Power Dissipation @ TA = 25C (Note 1.) Derate above 25C PD 0.8 Watts 6.4 mW/C Total Power Dissipation @ TA = 25C (Note 2.) Derate above 25C Operating and Storage Temperature Range PD TJ, Tstg 1.25 Watts 10 mW/C -65 to 150 C EMITTER 3 4 1 2 3 SOT-223 CASE 318E STYLE 1 DEVICE MARKING THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance - Junction-to-Ambient (Note 1.) RJA 156 C/W Thermal Resistance - Junction-to-Ambient (Note 2.) RJA 100 C/W TL 260 C 10 Sec Maximum Temperature for Soldering Purposes Time in Solder Bath LWW AS3 L WW AS3 1. Device mounted on a FR-4 glass epoxy printed circuit board using minimum recommended footprint. 2. Device mounted on a FR-4 glass epoxy printed circuit board using 1 cm2 pad. = Assembly Location = Date Code = Specific Device Code ORDERING INFORMATION Device BSP52T1 Package Shipping SOT-223 1000/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 January, 2001 - Rev. 2 368 Publication Order Number: BSP52T1/D BSP52T1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Characteristics Min Max 90 - 5.0 - - 10 - 10 1000 2000 - - - 1.3 - 1.9 Unit OFF CHARACTERISTICS Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0) V(BR)CBO Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO Collector-Emitter Cutoff Current (VCE = 80 Vdc, VBE = 0) ICES Emitter-Base Cutoff Current (VEB = 4.0 Vdc, IC = 0) IEBO Vdc Vdc Adc Adc ON CHARACTERISTICS (Note 3.) hFE DC Current Gain (IC = 150 mAdc, VCE = 10 Vdc) (IC = 500 mAdc, VCE = 10 Vdc) Collector-Emitter Saturation Voltage (IC = 500 mAdc, IB = 0.5 mAdc) VCE(sat) Base-Emitter On Voltage (IC = 500 mAdc, IB = 0.5 mAdc) VBE(on) 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% http://onsemi.com 369 - Vdc Vdc ON Semiconductor High Voltage Transistor BSS63LT1 PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO -100 Vdc Collector-Emitter Voltage RBE = 10 k VCER 3 Vdc -110 Collector Current -- Continuous 1 IC -100 mAdc Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W PD 300 mW 2.4 mW/C RJA 417 C/W TJ, Tstg -55 to +150 C 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board(1) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature CASE 318-08, STYLE 6 SOT-23 (TO-236AB) COLLECTOR 3 1 BASE DEVICE MARKING 2 EMITTER BSS63LT1 = T1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max -100 -- -- -110 -- -- -110 -- -- -6.0 -- -- -- -- -100 -- -- -10 -- -- -200 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = -100 Adc) V(BR)CEO Collector-Emitter Breakdown Voltage (IC = -10 Adc, IE = 0, RBE = 10 k) V(BR)CER Collector-Base Breakdown Voltage (IE = -10 Adc, IE = 0) V(BR)CBO Emitter-Base Breakdown Voltage (IE = -10 Adc) V(BR)EBO Collector Cutoff Current (VCB = -90 Vdc, IE = 0) ICBO Collector Cutoff Current (VCE = -110 Vdc, RBE = 10 k) ICER Emitter Cutoff Current (VEB = -6.0 Vdc, IC = 0) IEBO Vdc Vdc Vdc Vdc nAdc Adc nAdc 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 2 370 Publication Order Number: BSS63LT1/D BSS63LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Characteristic Min Typ Max 30 30 -- -- -- -- -- -- -250 -- -- -900 50 95 -- -- -- 20 Unit ON CHARACTERISTICS DC Current Gain (IC = -10 mAdc, VCE = -1.0 Vdc) (IC = -25 mAdc, VCE = -1.0 Vdc) hFE Collector-Emitter Saturation Voltage (IC = -25 mAdc, IB = -2.5 mAdc) VCE(sat) Base-Emitter Saturation Voltage (IC = -25 mAdc, IB = -2.5 mAdc) VBE(sat) -- mVdc mVdc SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = -25 mAdc, VCE = -5.0 Vdc, f = 20 MHz) fT Case Capacitance (IE = IC = 0, VCB = -10 Vdc, f = 1.0 MHz) CC http://onsemi.com 371 MHz pF ON Semiconductor Driver Transistor BSS64LT1 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 80 Vdc Collector-Base Voltage VCBO 120 Vdc Emitter-Base Voltage VEBO 5.0 Vdc IC 100 mAdc Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W PD 300 mW 2.4 mW/C RJA 417 C/W TJ, Tstg -55 to +150 C Collector Current -- Continuous 3 1 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board(1) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature CASE 318-08, STYLE 6 SOT-23 (TO-236AB) COLLECTOR 3 1 BASE DEVICE MARKING 2 EMITTER BSS64LT1 = AM ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max 80 -- 120 -- 5.0 -- -- -- 0.1 500 -- 200 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 4.0 mAdc) V(BR)CEO Collector-Base Breakdown Voltage (IC = 100 Adc) V(BR)CBO Emitter-Base Breakdown Voltage (IE = 100 Adc) V(BR)EBO Collector Cutoff Current (VCE = 90 Vdc) (TA = 150C) ICBO Emitter Cutoff Current (VEB = 4.0 Vdc) IEBO Vdc Vdc Vdc Adc nAdc 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 2 372 Publication Order Number: BSS64LT1/D BSS64LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Characteristic Min Max 20 -- -- -- 0.15 0.2 -- -- 60 -- -- 20 Unit ON CHARACTERISTICS DC Current Gain (VCE = 1.0 Vdc, IC = 10 mAdc) HFE Collector-Emitter Saturation Voltage (IC = 4.0 mAdc, IB = 400 Adc) (IC = 50 mAdc, IB = 15 mAdc) VCE(sat) Forward Base-Emitter Voltage VBE(sat) -- Vdc -- SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 4.0 mAdc, VCE = 10 Vdc, f = 20 MHz) fT Output Capacitance (VCB = 10 Vdc, f = 1.0 MHz) MHz Cob http://onsemi.com 373 pF DA121TT1 Preferred Device Silicon Switching Diode MAXIMUM RATINGS (TA = 25C) Rating Continuous Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current Pulse Width = 10 s http://onsemi.com Symbol Max Unit VR 80 V IF 200 mA IFM(surge) 500 mA Symbol Max Unit 225 mW 3 CATHODE 1 ANODE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation, FR-4 Board (1) TA = 25C Derated above 25C PD Thermal Resistance, Junction to Ambient (1) RJA Total Device Dissipation, FR-4 Board (2) TA = 25C Derated above 25C PD Thermal Resistance, Junction to Ambient (2) Junction and Storage Temperature Range 1.8 mW/C 555 C/W 360 mW 2.9 mW/C RJA 345 C/W TJ, Tstg -55 to +150 C 3 2 1 CASE 463 SOT-416/SC-75 STYLE 2 DEVICE MARKING 6A (1) FR-4 @ Minimum Pad (2) FR-4 @ 1.0 x 1.0 Inch Pad ORDERING INFORMATION Device Package Shipping DA121TT1 SOT-416 3000 / Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 May, 2000 - Rev. 1 374 Publication Order Number: DA121TT1/D DA121TT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max -- -- -- -- 715 866 1000 1250 -- -- -- 1.0 50 30 Unit Forward Voltage (IF = 1.0 mA) (IF = 10 mA) (IF = 50 mA) (IF = 150 mA) VF Reverse Current (VR = 75 V) (VR = 75 V, TJ = 150C) (VR = 25 V, TJ = 150C) IR Capacitance (VR = 0, f = 1.0 MHz) CD -- 2.0 pF Reverse Recovery Time (IF = IR = 10 mA, RL = 50 ) (Figure 1) trr -- 6.0 ns Stored Charge (IF = 10 mA to VR = 6.0 V, RL = 500 ) (Figure 2) QS -- 45 PC Forward Recovery Voltage (IF = 10 mA, tr = 20 ns) (Figure 3) VFR -- 1.75 V http://onsemi.com 375 mV A DA121TT1 1 ns MAX 10% DUT 500 t trr tif 50 DUTY CYCLE = 2% 90% VF Irr 100 ns Figure 1. Reverse Recovery Time Equivalent Test Circuit OSCILLOSCOPE R 10 M C 7 pF 500 VC DUT 20 ns MAX D1 t 10% Qa VCM C 243 pF 100 K DUTY CYCLE = 2% t 90% Vf BAW62 VCM 400 ns Figure 2. Recovery Charge Equivalent Test Circuit V 120 ns 450 1 K V 90% DUT Vfr t 10% DUTY CYCLE = 2% 2 ns MAX Figure 3. Forward Recovery Voltage Equivalent Test Circuit http://onsemi.com 376 50 DA121TT1 10 IR , REVERSE CURRENT (A) IF, FORWARD CURRENT (mA) 100 10 TA = 85C TA = 25C 1.0 TA = -40C 0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) TA = 125C 1.0 TA = 85C 0.1 TA = 55C 0.01 0.001 1.2 TA = 150C TA = 25C 0 10 Figure 4. Forward Voltage 20 30 40 VR, REVERSE VOLTAGE (VOLTS) 50 Figure 5. Leakage Current CD, DIODE CAPACITANCE (pF) 0.68 0.64 0.60 0.56 0.52 2 0 4 6 8 VR, REVERSE VOLTAGE (VOLTS) r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE Figure 6. Capacitance 1.0 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 1.0 t, TIME (s) Figure 7. Normalized Thermal Response http://onsemi.com 377 10 100 1000 DAN222 Common Cathode Silicon Dual Switching Diode This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT-416/SC-90 package which is designed for low power surface mount applications, where board space is at a premium. http://onsemi.com CATHODE 3 * Fast trr * Low CD * Available in 8 mm Tape and Reel 1 MAXIMUM RATINGS (TA = 25C) Rating Symbol Value Unit VR 80 Vdc VRM 80 Vdc IF 100 mAdc IFM 300 mAdc IFSM(1) 2.0 Adc Symbol Max Unit Power Dissipation PD 150 mW Junction Temperature TJ 150 C Storage Temperature Range Tstg -55 to +150 C Reverse Voltage Peak Reverse Voltage Forward Current Peak Forward Current Peak Forward Surge Current 3 2 MARKING DIAGRAM 2 1 SOT-416 SC-90/SC-75 CASE 463 STYLE 3 THERMAL CHARACTERISTICS Rating ANODE 1. t = 1 S N9 ORDERING INFORMATION Device DAN222 Package Shipping SOT-416 3000/Tape & Reel ELECTRICAL CHARACTERISTICS (TA = 25C) Characteristic Symbol Condition Min Max Unit Reverse Voltage Leakage Current IR VR = 70 V -- 0.1 Adc Forward Voltage VF IF = 100 mA -- 1.2 Vdc Reverse Breakdown Voltage VR IR = 100 A 80 -- Vdc Diode Capacitance CD VR = 6.0 V, f = 1.0 MHz -- 3.5 pF trr(2) IF = 5.0 mA, VR = 6.0 V, RL = 100 , Irr = 0.1 IR -- 4.0 ns Reverse Recovery Time 2. trr Test Circuit on following page. Semiconductor Components Industries, LLC, 2001 March, 2000 - Rev. 2 378 Publication Order Number: DAN222/D DAN222 TYPICAL ELECTRICAL CHARACTERISTICS 10 IR , REVERSE CURRENT (A) TA = 85C 10 TA = -40C 1.0 0.1 TA = 25C 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) TA = 125C 1.0 TA = 85C 0.1 TA = 55C 0.01 0.001 1.2 TA = 150C TA = 25C 10 0 Figure 1. Forward Voltage 50 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Reverse Current 1.0 CD , DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 100 0.9 0.8 0.7 0.6 0 2 4 6 8 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Diode Capacitance tr tp t IF trr t 10% A RL Irr = 0.1 IR 90% VR tp = 2 s tr = 0.35 ns INPUT PULSE RECOVERY TIME EQUIVALENT TEST CIRCUIT Figure 4. Reverse Recovery Time Test Circuit for the DAN222 http://onsemi.com 379 IF = 5.0 mA VR = 6 V RL = 100 OUTPUT PULSE DAP222, DAP202U Preferred Device Common Anode Silicon Dual Switching Diodes These Common Anode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. The DAP222 device is housed in the SOT-416/SC-75 package which is designed for low power surface mount applications, where board space is at a premium. The DAP202U device is housed in the SC-70/SOT-323 package. * Fast trr * Low CD * Available in 8 mm Tape and Reel http://onsemi.com 3 MARKING DIAGRAMS 2 ANODE 3 1 SOT-416 SC-75/SC-90 CASE 463 STYLE 3 1 2 CATHODE 3 1 SC-70/SOT-323 CASE 419 Symbol Value Unit VR 80 Vdc VRM 80 Vdc IF 100 mAdc IFM 300 mAdc IFSM(1) 2.0 Adc Symbol Max Unit Power Dissipation PD 150 mW Junction Temperature TJ 150 C Storage Temperature Tstg -55 ~ +150 C Reverse Voltage Peak Reverse Voltage Forward Current Peak Forward Current Peak Forward Surge Current ORDERING INFORMATION Device THERMAL CHARACTERISTICS Rating NB 2 MAXIMUM RATINGS (TA = 25C) Rating P9 Package Shipping DAP222 SC-75 3000/Tape & Reel DAP202U SC-70 3000/Tape & Reel Preferred devices are recommended choices for future use and best overall value. ELECTRICAL CHARACTERISTICS (TA = 25C) Characteristic Symbol Condition Min Max Unit Reverse Voltage Leakage Current IR VR = 70 V -- 0.1 Adc Forward Voltage VF IF = 100 mA -- 1.2 Vdc Reverse Breakdown Voltage VR IR = 100 A 80 -- Vdc Diode Capacitance CD VR = 6.0 V, f = 1.0 MHz -- 3.5 pF trr(2) ttt(3) IF = 5.0 mA, VR = 6.0 V, RL = 100 , Irr = 0.1 IR IF = 5.0 mA, VR = 6.0 V, RL = 50 , Irr = 0.1 IR -- - 4.0 10.0 ns Reverse Recovery Time DAP222 DAP202U 4. t = 1 S 5. trr Test Circuit for DAP222 in Figure 4. 6. trr Test Circuit for DAP202U in Figure 5. Semiconductor Components Industries, LLC, 2001 September, 2001 - Rev. 3 380 Publication Order Number: DAP222/D DAP222, DAP202U TYPICAL ELECTRICAL CHARACTERISTICS 10 IR , REVERSE CURRENT (A) TA = 85C 10 TA = -40C 1.0 0.1 TA = 25C 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) TA = 125C 1.0 TA = 85C 0.1 TA = 55C 0.01 0.001 1.2 TA = 150C TA = 25C 10 0 Figure 1. Forward Voltage 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Reverse Current 1.75 CD , DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 100 1.5 1.25 1.0 0.75 0 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Diode Capacitance http://onsemi.com 381 8 50 DAP222, DAP202U tr tp t IF trr t 10% A RL Irr = 0.1 IR 90% VR IF = 5.0 mA VR = 6 V RL = 100 tp = 2 s tr = 0.35 ns INPUT PULSE RECOVERY TIME EQUIVALENT TEST CIRCUIT OUTPUT PULSE Figure 4. Reverse Recovery Time Test Circuit for the DAP222 tr tp t IF trr t 10% A RL Irr = 0.1 IR 90% VR tp = 2 s tr = 0.35 ns INPUT PULSE RECOVERY TIME EQUIVALENT TEST CIRCUIT Figure 5. Reverse Recovery Time Test Circuit for the DAP202U http://onsemi.com 382 IF = 5.0 mA VR = 6 V RL = 100 OUTPUT PULSE DTA114E Series Preferred Devices Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the TO-92 package which is designed for through hole applications. http://onsemi.com PNP SILICON BIAS RESISTOR TRANSISTOR MAXIMUM RATINGS (TA = 25C unless otherwise noted) Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc Collector Current IC 100 mAdc Total Power Dissipation @ TA = 25C (1.) Derate above 25C PD 350 2.81 mW mW/C Rating 1 2 3 CASE 29 TO-92 (TO-226) STYLE 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient (surface mounted) Operating and Storage Temperature Range Maximum Temperature for Soldering Purposes, Time in Solder Bath Symbol Value Unit RJA 357 C/W TJ, Tstg -55 to +150 C 260 10 C Sec TL DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping DTA114E DTA124E DTA144E DTA114Y DTA114T DTA143T DTB113E DTA123E DTA143E DTA143Z DTA114E DTA124E DTA144E DTA114Y DTA114T DTA143T DTB113E DTA123E DTA143E DTA143Z 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 10 22 47 47 1.0 2.2 4.7 47 5000/Box PIN3 COLLECTOR (OUTPUT) R1 PIN1 R2 BASE (INPUT) PIN2 EMITTER (GROUND) Preferred devices are recommended choices for future use and best overall value. 1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. Semiconductor Components Industries, LLC, 2001 August, 2000 - Rev. 1 383 Publication Order Number: DTA114E/D DTA114E Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO -- -- 100 nAdc Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO -- -- 500 nAdc Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 mAdc Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) V(BR)CBO 50 -- -- Vdc Collector-Emitter Breakdown Voltage (2.) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 -- -- Vdc hFE 35 60 80 80 160 160 3.0 8.0 15 80 60 100 140 140 250 250 5.0 15 27 140 -- -- -- -- -- -- -- -- -- -- VCE(sat) -- -- 0.25 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 OFF CHARACTERISTICS DTA114E DTA124E DTA144E DTA114Y DTA114T DTA143T DTB113E DTA123E DTA143E DTA143Z ON CHARACTERISTICS (2.) DC Current Gain (VCE = 10 V, IC = 5.0 mA) DTA114E DTA124E DTA144E DTA114Y DTA114T DTA143T DTB113E DTA123E DTA143E DTA143Z Collector-Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA) DTA144E/DTA114Y (IC = 10 mA, IE = 0.3 mA) DTB113E/DTA143E (IC = 10 mA, IB = 5 mA) DTA123E (IC = 10 mA, IB = 1 mA) DTA114T/DTA143T/ (IC = 10 mA, IB = 1 mA) DTA143Z/DTA124E Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k) VOL DTA114E DTA124E DTA114Y DTA114T DTA143T DTB113E DTA123E DTA143E DTA143Z DTA144E 2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% http://onsemi.com 384 Vdc Vdc DTA114E Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 0.05 V, RL = 1.0 k) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k) Input Resistor Resistor Ratio Symbol Min Typ Max Unit VOH 4.9 -- -- Vdc R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 k R1/R2 0.8 0.17 -- 0.8 0.055 1.0 0.21 -- 1.0 0.1 1.2 0.25 -- 1.2 0.185 DTA114T DTA113T DTA144E DTA114Y DTA143Z DTB113E DTA114T DTA143T DTA123E DTA143E DTA114E DTA124E DTA144E DTA114Y DTA114T DTA143T DTB113E DTA123E DTA143E DTA143Z DTA114E/DTA124E/DTA144E DTA114Y DTA114T/DTA143T DTB113E/DTA123E/DTA143E DTA143Z http://onsemi.com 385 DTA114E Series VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS DTA114E PD , POWER DISSIPATION (MILLIWATTS) 250 200 150 100 RJA = 625C/W 50 0 -50 0 50 100 150 1 IC/IB=10 TA=-25C 75C 0.1 0.01 20 0 TA, AMBIENT TEMPERATURE (C) Cob , CAPACITANCE (pF) h FE, DC CURRENT GAIN (NORMALIZED) TA=75C 25C -25C 100 10 IC, COLLECTOR CURRENT (mA) 3 2 1 0 100 f = 1 MHz lE = 0 V TA = 25C 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 3. DC Current Gain 100 25C VO = 0.2 V TA=-25C 10 1 0.1 0.01 0.001 50 Figure 4. Output Capacitance Vin, INPUT VOLTAGE (VOLTS) IC , COLLECTOR CURRENT (mA) 75C 80 4 VCE = 10 V 100 60 Figure 2. VCE(sat) versus IC 1000 1 40 IC, COLLECTOR CURRENT (mA) Figure 1. Derating Curve 10 25C TA=-25C 10 25C 75C 1 VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 Figure 5. Output Current versus Input Voltage 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 6. Input Voltage versus Output Current http://onsemi.com 386 50 DTA114E Series 1000 10 IC/IB=10 h FE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS DTA124E TA=-25C 25C 1 75C 0.1 0.01 0 20 60 40 IC, COLLECTOR CURRENT (mA) VCE = 10 V TA=75C 100 10 80 1 10 Figure 8. DC Current Gain 100 IC , COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25C 2 1 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 25C TA=-25C 1 0.1 VO = 5 V 0.01 0.001 50 75C 10 0 1 2 3 4 VO = 0.2 V TA=-25C 25C 10 75C 1 0 10 6 7 8 9 Figure 10. Output Current versus Input Voltage 100 0.1 5 Vin, INPUT VOLTAGE (VOLTS) Figure 9. Output Capacitance Vin, INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 4 0 100 IC, COLLECTOR CURRENT (mA) Figure 7. VCE(sat) versus IC 3 25C -25C 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 11. Input Voltage versus Output Current http://onsemi.com 387 10 DTA114E Series 1 1000 IC/IB=10 TA=-25C 25C 75C 0.1 0.01 h FE , CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS DTA144E 0 10 20 30 IC, COLLECTOR CURRENT (mA) TA=75C 25C 10 40 -25C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 1 100 0.6 0.4 0.2 0 0 TA=75C -25C 1 0.1 0.01 VO = 5 V 1 0 2 3 4 VO = 2 V TA=-25C 25C 75C 1 0 10 6 7 8 9 10 Figure 15. Output Current versus Input Voltage 100 0.1 5 Vin, INPUT VOLTAGE (VOLTS) Figure 14. Output Capacitance 10 25C 10 0.001 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) Vin , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) I C , COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25C 0.8 100 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 16. Input Voltage versus Output Current http://onsemi.com 388 DTA114E Series 180 1 IC/IB=10 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS DTA114Y TA=-25C 25C 0.1 75C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) TA=75C VCE = 10 V 160 25C 140 -25C 120 100 80 60 40 20 0 80 2 1 4 6 Figure 17. VCE(sat) versus IC TA=75C f = 1 MHz lE = 0 V TA = 25C 3.5 3 IC, COLLECTOR CURRENT (mA) Cob , CAPACITANCE (pF) 90 100 100 4 2.5 2 1.5 1 0.5 0 2 4 6 8 10 15 20 25 30 35 VR, REVERSE BIAS VOLTAGE (VOLTS) 40 45 50 Figure 19. Output Capacitance 25C -25C 10 VO = 5 V 1 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 20. Output Current versus Input Voltage +12 V 10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) 80 Figure 18. DC Current Gain 4.5 0 8 10 15 20 40 50 60 70 IC, COLLECTOR CURRENT (mA) TA=-25C 25C 75C Typical Application for PNP BRTs 1 LOAD 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 21. Input Voltage versus Output Current Figure 22. Inexpensive, Unregulated Current Source http://onsemi.com 389 DTA114EET1 Series Preferred Devices Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-75/SOT-416 package which is designed for low power surface mount applications. * * * * * Simplifies Circuit Design Reduces Board Space Reduces Component Count The SC-75/SOT-416 package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. Available in 8 mm, 7 inch/3000 Unit Tape & Reel http://onsemi.com PNP SILICON BIAS RESISTOR TRANSISTORS PIN 3 COLLECTOR (OUTPUT) PIN 1 BASE (INPUT) R1 R2 PIN 2 EMITTER (GROUND) MAXIMUM RATINGS (TA = 25C unless otherwise noted) Rating Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc Collector Current 3 2 1 SC-75/SOT-416 CASE 463 STYLE 1 MARKING DIAGRAM 6x M 6x x M = Specific Device Code = (See Marking Table on page 391) = Date Code Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 January, 2000 - Rev. 3 390 Publication Order Number: DTA114EET1/D DTA114EET1 Series DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping DTA114EET1 DTA124EET1 DTA144EET1 DTA114YET1 DTA114TET1 DTA143TET1 DTA123EET1 DTA143EET1 DTA143ZET1 DTA124XET1 DTA123JET1 DTA115EET1 DTA144WET1 6A 6B 6C 6D 6E 6F 6H 6J 6K 6L 6M 6N 6P 10 22 47 10 10 4.7 2.2 4.7 4.7 22 2.2 100 47 10 22 47 47 2.2 4.7 47 47 47 100 22 3000/Tape & Reel THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation, FR-4 Board (Note 1.) @ TA = 25C Derate above 25C Max Unit 200 1.6 mW mW/C 600 C/W 300 2.4 mW mW/C RJA 400 C/W TJ, Tstg -55 to +150 C PD Thermal Resistance, Junction to Ambient (Note 1.) RJA Total Device Dissipation, FR-4 Board (Note 2.) @ TA = 25C Derate above 25C PD Thermal Resistance, Junction to Ambient (Note 2.) Junction and Storage Temperature Range 1. FR-4 @ Minimum Pad 2. FR-4 @ 1.0 x 1.0 Inch Pad http://onsemi.com 391 DTA114EET1 Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO - - 100 nAdc Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO - - 500 nAdc Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO - - - - - - - - - - - - - - - - - - - - - - - - - - 0.5 0.2 0.1 0.2 0.9 1.9 2.3 1.5 0.18 0.13 0.2 0.05 0.13 mAdc Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) V(BR)CBO 50 - - Vdc Collector-Emitter Breakdown Voltage (Note 3.) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 - - Vdc hFE 35 60 80 80 160 160 8.0 15 80 80 80 80 80 60 100 140 140 250 250 15 27 140 130 140 150 140 - - - - - - - - - - - - - VCE(sat) - - 0.25 - - - - - - - - - - - - - - - - - - - - - - - - - - 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 4.9 - - OFF CHARACTERISTICS DTA114EET1 DTA124EET1 DTA144EET1 DTA114YET1 DTA114TET1 DTA143TET1 DTA123EET1 DTA143EET1 DTA143ZET1 DTA124XET1 DTA123JET1 DTA115EET1 DTA144WET1 ON CHARACTERISTICS (Note 3.) DC Current Gain (VCE = 10 V, IC = 5.0 mA) DTA114EET1 DTA124EET1 DTA144EET1 DTA114YET1 DTA114TET1 DTA143TET1 DTA123EET1 DTA143EET1 DTA143ZET1 DTA124XET1 DTA123JET1 DTA115EET1 DTA144WET1 Collector-Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA) (IC = 10 mA, IB = 5 mA) DTA123EET1 (IC = 10 mA, IB = 1 mA) DTA114TET1/DTA143TET1/ DTA143ZET1/DTA124XET1/DTA143EET1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 5.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 k) VOL DTA114EET1 DTA124EET1 DTA114YET1 DTA114TET1 DTA143TET1 DTA123EET1 DTA143EET1 DTA143ZET1 DTA124XET1 DTA123JET1 DTA144EET1 DTA115EET1 DTA144WET1 Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k) DTA114TET1 (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k) DTA143TET1 DTA123EET1 DTA143EET1 VOH 3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% http://onsemi.com 392 Vdc Vdc Vdc DTA114EET1 Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Input Resistor Resistor Ratio Symbol Min Typ Max Unit R1 7.0 15.4 32.9 7.0 7.0 3.3 1.5 3.3 3.3 15.4 1.54 70 32.9 10 22 47 10 10 4.7 2.2 4.7 4.7 22 2.2 100 47 13 28.6 61.1 13 13 6.1 2.9 6.1 6.1 28.6 2.86 130 61.1 k 0.8 0.17 - 0.8 0.055 0.38 0.038 1.7 1.0 0.21 - 1.0 0.1 0.47 0.047 2.1 1.2 0.25 - 1.2 0.185 0.56 0.056 2.6 DTA114EET1 DTA124EET1 DTA144EET1 DTA114YET1 DTA114TET1 DTA143TET1 DTA123EET1 DTA143EET1 DTA143ZET1 DTA124XET1 DTA123JET1 DTA115EET1 DTA144WET1 DTA114EET1/DTA124EET1/DTA144EET1/ DTA115EET1 DTA114YET1 DTA114TET1/DTA143TET1 DTA123EET1/DTA143EET1 DTA143ZET1 DTA124XET1 DTA123JET1 DTA144WET1 R1/R2 PD , POWER DISSIPATION (MILLIWATTS) 250 200 150 100 50 RJA = 600C/W 0 -50 0 50 100 TA, AMBIENT TEMPERATURE (C) 150 r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE Figure 1. Derating Curve 1.0 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) 1.0 Figure 2. Normalized Thermal Response http://onsemi.com 393 10 100 1000 DTA114EET1 Series 1000 1 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - DTA114EET1 TA=-25C 0.1 25C 75C 0.01 0 20 25C 100 10 -25C 10 IC, COLLECTOR CURRENT (mA) Figure 3. VCE(sat) versus IC Figure 4. DC Current Gain 50 1 100 3 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25C 2 1 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) TA=-25C 10 1 0.1 0.01 0.001 50 100 VO = 5 V 0 1 2 6 7 3 4 5 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=-25C 25C 75C 1 0 10 8 9 Figure 6. Output Current versus Input Voltage 10 0.1 100 25C 75C Figure 5. Output Capacitance V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) TA=75C IC, COLLECTOR CURRENT (mA) 40 4 0 VCE = 10 V 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 7. Input Voltage versus Output Current http://onsemi.com 394 10 DTA114EET1 Series 1000 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - DTA124EET1 IC/IB = 10 1 25C TA=-25C 75C 0.1 0.01 0 40 20 IC, COLLECTOR CURRENT (mA) TA=75C 10 1 Figure 9. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 3 2 1 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) TA=-25C 10 1 0.1 0.01 0.001 50 Figure 10. Output Capacitance 100 25C 75C f = 1 MHz lE = 0 V TA = 25C V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 4 0 VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V 10 25C 75C 1 0 10 8 9 Figure 11. Output Current versus Input Voltage TA=-25C 0.1 100 IC, COLLECTOR CURRENT (mA) Figure 8. VCE(sat) versus IC 0 25C -25C 100 10 50 VCE = 10 V 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 12. Input Voltage versus Output Current http://onsemi.com 395 10 DTA114EET1 Series 1 1000 IC/IB = 10 TA=-25C 25C 75C 0.1 0.01 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - DTA144EET1 0 10 20 30 IC, COLLECTOR CURRENT (mA) TA=75C 25C -25C 100 10 40 1 10 IC, COLLECTOR CURRENT (mA) Figure 13. VCE(sat) versus IC Figure 14. DC Current Gain 1 IC, COLLECTOR CURRENT (mA) 0.6 0.4 0.2 0 0 -25C 1 0.1 0.01 Figure 15. Output Capacitance VO = 5 V 1 0 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=-25C 25C 75C 1 0.1 0 10 8 9 Figure 16. Output Current versus Input Voltage 100 10 25C TA=75C 10 0.001 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 100 f = 1 MHz lE = 0 V TA = 25C 0.8 100 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 17. Input Voltage versus Output Current http://onsemi.com 396 10 DTA114EET1 Series 1 180 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - DTA114YET1 TA=-25C 25C 0.1 75C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 25C 140 -25C 120 100 80 60 40 20 0 80 TA=75C VCE = 10 V 160 2 1 4 6 Figure 18. VCE(sat) versus IC 100 IC, COLLECTOR CURRENT (mA) 3.5 Cob , CAPACITANCE (pF) TA=75C f = 1 MHz lE = 0 V TA = 25C 4 3 2.5 2 1.5 1 0.5 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 50 Figure 20. Output Capacitance 25C -25C 10 VO = 5 V 1 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 10 +12 V VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) 8 Figure 21. Output Current versus Input Voltage 10 25C 75C TA=-25C Typical Application for PNP BRTs 1 0.1 80 90 100 Figure 19. DC Current Gain 4.5 0 8 10 15 20 40 50 60 70 IC, COLLECTOR CURRENT (mA) LOAD 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 22. Input Voltage versus Output Current Figure 23. Inexpensive, Unregulated Current Source http://onsemi.com 397 DTA114EET1 Series VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 0.1 75C 25C -25C IC/IB = 10 0.01 0 1 2 3 4 5 IC, COLLECTOR CURRENT (mA) 6 7 hFE, DC CURRENT GAIN (NORMALIZED) TYPICAL ELECTRICAL CHARACTERISTICS -- DTA115EET1 1000 75C TA = -25C 100 25C 10 VCE = 10 V 1 1 10 IC, COLLECTOR CURRENT (mA) Figure 24. Maximum Collector Voltage versus Collector Current Figure 25. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 1.0 f = 1 MHz IE = 0 V TA = 25C 0.8 0.6 0.4 0.2 25C 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 60 TA = -25C 1 VO = 5 V 0 1 2 3 4 TA = -25C 10 VO = 0.2 V 75C 0 2 6 7 8 9 10 Figure 27. Output Current versus Input Voltage 100 1 5 Vin, INPUT VOLTAGE (VOLTS) Figure 26. Output Capacitance 25C 75C 10 0.1 0 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 1.2 0 100 4 6 8 10 12 14 16 IC, COLLECTOR CURRENT (mA) 18 Figure 28. Input Voltage versus Output Current http://onsemi.com 398 20 DTA114EET1 Series VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 TA = -25C 75C 0.1 25C IC/IB = 10 0.01 0 5 10 15 20 25 30 35 40 IC, COLLECTOR CURRENT (mA) 45 50 hFE, DC CURRENT GAIN (NORMALIZED) TYPICAL ELECTRICAL CHARACTERISTICS -- DTA144WET1 1000 75C TA = -25C 100 25C VCE = 10 V 10 1 10 IC, COLLECTOR CURRENT (mA) Figure 29. Maximum Collector Voltage versus Collector Current Figure 30. DC Current Gain 100 1.2 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25C 1.0 0.8 0.6 0.4 0.2 75C 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 60 TA = -25C 10 25C 1 0.1 0.01 0.001 0 VO = 5 V 0 1 2 3 4 VO = 0.2 V 1 TA = -25C 75C 25C 0 6 7 8 9 10 11 Figure 32. Output Current versus Input Voltage 100 10 5 Vin, INPUT VOLTAGE (VOLTS) Figure 31. Output Capacitance Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 1.4 0 100 5 10 15 20 IC, COLLECTOR CURRENT (mA) 25 Figure 33. Input Voltage versus Output Current http://onsemi.com 399 DTA144TT1 Preferred Device Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-59 package which is designed for low power surface mount applications. * * * * * * * Simplifies Circuit Design Reduces Board Space Reduces Component Count Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: Class 1 ESD Rating - Machine Model: Class B The SC-59 package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. Available in 8 mm embossed tape and reel Use the Device Number to order the 7 inch/3000 unit reel. http://onsemi.com PNP SILICON BIAS RESISTOR TRANSISTOR PIN 3 COLLECTOR (OUTPUT) R1 PIN 1 BASE (INPUT) PIN 2 EMITTER (GROUND) 3 MAXIMUM RATINGS (TA = 25C unless otherwise noted) 1 Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc Rating Collector Current 2 SC-59 CASE 318D PLASTIC MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic R2 Symbol Max Unit PD 230 (Note 1.) 338 (Note 2.) 1.8 (Note 1.) 2.7 (Note 2.) mW Total Device Dissipation TA = 25C Derate above 25C 6T M C/W Thermal Resistance - Junction-to-Ambient RJA 540 (Note 1.) 370 (Note 2.) C/W Thermal Resistance - Junction-to-Lead RJL 264 (Note 1.) 287 (Note 2.) C/W Junction and Storage Temperature Range TJ, Tstg -55 to +150 C 6T = Specific Device Code M = Date Code ORDERING INFORMATION Device DTA144TT1 DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping DTA144TT1 6T 47 3000/Tape & Reel Package Shipping SC-59 3000/Tape & Reel Preferred devices are recommended choices for future use and best overall value. 1. FR-4 @ Minimum Pad 2. FR-4 @ 1.0 x 1.0 inch Pad Semiconductor Components Industries, LLC, 2001 April, 2001 - Rev. 0 400 Publication Order Number: DTA144TT1/D DTA144TT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO - - 100 nAdc Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO - - 500 nAdc Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO - - 0.2 mAdc Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) V(BR)CBO 50 - - Vdc Collector-Emitter Breakdown Voltage (Note 3.) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 - - Vdc hFE 160 350 - VCE(sat) - - 0.25 Vdc Output Voltage (on) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k) VOL - - 0.2 Vdc Output Voltage (off) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k) VOH 4.9 - - Vdc R1 32.9 47 61.1 k Characteristic OFF CHARACTERISTICS ON CHARACTERISTICS (Note 3.) DC Current Gain (VCE = 10 V, IC = 5.0 mA) Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 1.0 mA) Input Resistor 3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% PD, POWER DISSIPATION (mW) 350 300 250 200 150 RJA= 370C/W 100 50 0 -50 0 50 100 TA, AMBIENT TEMPERATURE (5C) Figure 1. Derating Curve http://onsemi.com 401 150 DTC114E Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the TO-92 package which is designed for through hole applications. http://onsemi.com NPN SILICON BIAS RESISTOR TRANSISTOR PIN 3 COLLECTOR (OUTPUT) MAXIMUM RATINGS (TA = 25C unless otherwise noted) Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc Collector Current IC 100 mAdc Total Power Dissipation @ TA = 25C (Note 1.) Derate above 25C PD 350 2.81 mW mW/C Rating R1 PIN 2 BASE (INPUT) R2 PIN 1 EMITTER (GROUND) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient (surface mounted) Operating and Storage Temperature Range Maximum Temperature for Soldering Purposes, Time in Solder Bath Symbol Value Unit RJA 357 C/W TJ, Tstg -55 to +150 C 260 10 C Sec TL 1 2 3 CASE 29 TO-92 (TO-226) STYLE 1 DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping DTC114E DTC124E DTC144E DTC114Y DTC114T DTC143T DTD113E DTC123E DTC143E DTC143Z DTC114E DTC124E DTC144E DTC114Y DTC114T DTC143T DTD113E DTC123E DTC143E DTC143Z 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 10 22 47 47 1.0 2.2 4.7 47 5000/Box MARKING DIAGRAM DTC1xxx YWW DTC1 xxx Y WW = Specific Device Code = (See Table) = Year = Work Week 1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 January, 2001 - Rev. 2 402 Publication Order Number: DTC114E/D DTC114E Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO - - 100 nAdc Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO - - 500 nAdc Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO - - - - - - - - - - - - - - - - - - - - 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 mAdc Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) V(BR)CBO 50 - - Vdc Collector-Emitter Breakdown Voltage (Note 2.) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 - - Vdc hFE 35 60 80 80 160 160 3.0 8.0 15 80 60 100 140 140 350 350 5.0 15 30 200 - - - - - - - - - - VCE(sat) - - 0.25 - - - - - - - - - - - - - - - - - - - - 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 OFF CHARACTERISTICS DTC114E DTC124E DTC144E DTC114Y DTC114T DTC143T DTD113E DTC123E DTC143E DTC143Z ON CHARACTERISTICS (Note 2.) DC Current Gain (VCE = 10 V, IC = 5.0 mA) DTC114E DTC124E DTC144E DTC114Y DTC114T DTC143T DTD113E DTC123E DTC143E DTC143Z Collector-Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA) DTC144E/DTC114Y (IC = 10 mA, IB = 0.3 mA) DTD113E/DTC143E (IC = 10 mA, IB = 5 mA) DTC123E (IC = 10 mA, IB = 1 mA) DTC114T/DTC143T/ (IC = 10 mA, IB = 1 mA) DTC143Z/DTC124E Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k) VOL DTC114E DTC124E DTC114Y DTC114T DTC143T DTD113E DTC123E DTC143E DTC143Z DTC144E 2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% http://onsemi.com 403 Vdc Vdc DTC114E Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 0.05 V, RL = 1.0 k) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k) Input Resistor Resistor Ratio Symbol Min Typ Max Unit VOH 4.9 - - Vdc R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 k R1/R2 0.8 0.17 - 0.8 0.055 1.0 0.21 - 1.0 0.1 1.2 0.25 - 1.2 0.185 DTC114E DTC124E DTC144E DTC114Y DTC123E DTC143E DTD113E DTC114T DTC143T DTC143Z DTC114E DTC124E DTC144E DTC114Y DTC114T DTC143T DTD113E DTC123E DTC143E DTC143Z DTC114E/DTC124E/DTC144E DTC114Y DTC114T/DTC143T DTD113E/DTC123E/DTC143E DTC143Z http://onsemi.com 404 DTC114E Series PD , POWER DISSIPATION (MILLIWATTS) 250 200 150 100 RJA = 625C/W 50 0 -50 0 50 100 TA, AMBIENT TEMPERATURE (C) 150 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS DTC114E 1 IC/IB = 10 TA=-25C 25C 75C 0.1 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) Figure 1. Derating Curve Figure 2. VCE(sat) versus IC 4 VCE = 10 V TA=75C 25C -25C Cob , CAPACITANCE (pF) h FE, DC CURRENT GAIN (NORMALIZED) 1000 100 10 1 10 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25C 3 2 1 0 100 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 100 TA=-25C 10 TA=-25C VO = 0.2 V Vin, INPUT VOLTAGE (VOLTS) IC , COLLECTOR CURRENT (mA) 10 25C 75C 50 Figure 4. Output Capacitance Figure 3. DC Current Gain 1 0.1 0.01 0.001 80 25C 75C 1 VO = 5 V 0 1 2 5 6 7 3 4 Vin, INPUT VOLTAGE (VOLTS) 8 9 0.1 10 0 Figure 5. VCE(sat) versus IC 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 6. VCE(sat) versus IC http://onsemi.com 405 50 DTC114E Series - 1000 1 IC/IB = 10 h FE, DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS TYPICAL ELECTRICAL CHARACTERISTICS DTC124E TA=-25C 25C 75C 0.1 0.01 0.001 40 20 60 IC, COLLECTOR CURRENT (mA) 0 TA=75C 25C -25C 100 10 80 VCE = 10 V 1 Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 100 IC , COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25C 2 1 0 0 10 20 30 50 40 75C 25C TA=-25C 10 1 0.1 0.01 VO = 5 V 0.001 2 0 4 6 8 10 VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) Figure 9. Output Capacitance Figure 10. Output Current versus Input Voltage 100 VO = 0.2 V Vin , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 4 3 100 10 IC, COLLECTOR CURRENT (mA) TA=-25C 10 75C 25C 1 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 11. Input Voltage versus Output Current http://onsemi.com 406 DTC114E Series 10 IC/IB = 10 1000 TA=-25C 25C 1 h FE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS DTC144E 75C 0.1 0.01 0 20 40 60 IC, COLLECTOR CURRENT (mA) TA=75C 25C -25C 100 10 80 VCE = 10 V 10 1 IC, COLLECTOR CURRENT (mA) Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 1 100 0.6 0.4 0.2 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 25C 75C 10 TA=-25C 1 0.1 0.01 VO = 5 V 0.001 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 100 VO = 0.2 V TA=-25C 10 25C 75C 1 0.1 0 10 8 10 Figure 15. Output Current versus Input Voltage Figure 14. Output Capacitance V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) I C , COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25C 0.8 100 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 16. Input Voltage versus Output Current http://onsemi.com 407 DTC114E Series 1 300 TA=-25C IC/IB = 10 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS TYPICAL ELECTRICAL CHARACTERISTICS DTC114Y 25C 0.1 75C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 25C 200 -25C 150 100 50 0 80 TA=75C VCE = 10 250 2 1 4 6 Figure 17. VCE(sat) versus IC 100 75C 3 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25C 3.5 2.5 2 1.5 1 0.5 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 50 Figure 19. Output Capacitance 25C TA=-25C 10 VO = 5 V 1 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) TA=-25C VO = 0.2 V 25C 75C 1 0.1 0 10 8 Figure 20. Output Current versus Input Voltage 10 V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 80 90 100 Figure 18. DC Current Gain 4 0 8 10 15 20 40 50 60 70 IC, COLLECTOR CURRENT (mA) 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 21. Input Voltage versus Output Current http://onsemi.com 408 50 10 DTC114E Series TYPICAL APPLICATIONS FOR NPN BRTs +12 V ISOLATED LOAD FROM P OR OTHER LOGIC Figure 22. Level Shifter: Connects 12 or 24 Volt Circuits to Logic +12 V VCC OUT IN LOAD Figure 23. Open Collector Inverter: Inverts the Input Signal Figure 24. Inexpensive, Unregulated Current Source http://onsemi.com 409 DTC114EET1 Series Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-75/SOT-416 package which is designed for low power surface mount applications. * * * * * Simplifies Circuit Design Reduces Board Space Reduces Component Count The SC-75/SOT-416 package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. Available in 8 mm, 7 inch/3000 Unit Tape & Reel http://onsemi.com NPN SILICON BIAS RESISTOR TRANSISTORS PIN 3 COLLECTOR (OUTPUT) PIN 1 BASE (INPUT) R1 R2 PIN 2 EMITTER (GROUND) MAXIMUM RATINGS (TA = 25C unless otherwise noted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol Value Unit VCBO 50 Vdc VCEO 50 Vdc IC 100 mAdc 3 2 1 SC-75/SOT-416 CASE 463 STYLE 1 MARKING DIAGRAM 8x M 8x x M Semiconductor Components Industries, LLC, 2001 January, 2001 - Rev. 3 410 = Specific Device Code = (See Marking Table on page 411) = Date Code Publication Order Number: DTC114EET1/D DTC114EET1 Series DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping DTC114EET1 DTC124EET1 DTC144EET1 DTC114YET1 DTC114TET1 DTC143TET1 DTC123EET1 DTC143EET1 DTC143ZET1 DTC124XET1 DTC123JET1 DTC115EET1 DTC144WET1 8A 8B 8C 8D 8E 8F 8H 8J 8K 8L 8M 8N 8P 10 22 47 10 10 4.7 2.2 4.7 4.7 22 2.2 100 47 10 22 47 47 2.2 4.7 47 47 47 100 22 3000/Tape & Reel THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation, FR-4 Board (Note 1.) @ TA = 25C Derate above 25C Max Unit 200 1.6 mW mW/C 600 C/W 300 2.4 mW mW/C RJA 400 C/W TJ, Tstg -55 to +150 C PD Thermal Resistance, Junction to Ambient (Note 1.) RJA Total Device Dissipation, FR-4 Board (Note 2.) @ TA = 25C Derate above 25C PD Thermal Resistance, Junction to Ambient (Note 2.) Junction and Storage Temperature Range 1. FR-4 @ Minimum Pad 2. FR-4 @ 1.0 x 1.0 Inch Pad http://onsemi.com 411 DTC114EET1 Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO - - 100 nAdc Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO - - 500 nAdc Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO - - - - - - - - - - - - - - - - - - - - - - - - - - 0.5 0.2 0.1 0.2 0.9 1.9 2.3 1.5 0.18 0.13 0.2 0.05 0.13 mAdc Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) V(BR)CBO 50 - - Vdc Collector-Emitter Breakdown Voltage (Note 3.) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 - - Vdc hFE 35 60 80 80 160 160 8.0 15 80 80 80 80 80 60 100 140 140 350 350 15 30 200 150 140 150 140 - - - - - - - - - - - - - VCE(sat) - - 0.25 - - - - - - - - - - - - - - - - - - - - - - - - - - 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 4.9 - - OFF CHARACTERISTICS DTC114EET1 DTC124EET1 DTC144EET1 DTC114YET1 DTC114TET1 DTC143TET1 DTC123EET1 DTC143EET1 DTC143ZET1 DTC124XET1 DTC123JET1 DTC115EET1 DTC144WET1 ON CHARACTERISTICS (Note 3.) DC Current Gain (VCE = 10 V, IC = 5.0 mA) DTC114EET1 DTC124EET1 DTC144EET1 DTC114YET1 DTC114TET1 DTC143TET1 DTC123EET1 DTC143EET1 DTC143ZET1 DTC124XET1 DTC123JET1 DTC115EET1 DTC144WET1 Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 5 mA) DTC123EET1 (IC = 10 mA, IB = 1 mA) DTC143TET1/DTC114TET1/ DTC143EET1/DTC143ZET1/DTC124XET1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 5.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 k) VOL DTC114EET1 DTC124EET1 DTC114YET1 DTC114TET1 DTC143TET1 DTC123EET1 DTC143EET1 DTC143ZET1 DTC124XET1 DTC123JET1 DTC144EET1 DTC115EET1 DTC144WET1 Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k) DTC143TET1 (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k) DTC143ZET1 DTC114TET1 VOH 3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% http://onsemi.com 412 Vdc Vdc Vdc DTC114EET1 Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Input Resistor Resistor Ratio Symbol Min Typ Max Unit R1 7.0 15.4 32.9 7.0 7.0 3.3 1.5 3.3 3.3 15.4 1.54 70 32.9 10 22 47 10 10 4.7 2.2 4.7 4.7 22 2.2 100 47 13 28.6 61.1 13 13 6.1 2.9 6.1 6.1 28.6 2.86 130 61.1 k 0.8 0.17 - 0.8 0.055 0.38 0.038 1.7 1.0 0.21 - 1.0 0.1 0.47 0.047 2.1 1.2 0.25 - 1.2 0.185 0.56 0.056 2.6 DTC114EET1 DTC124EET1 DTC144EET1 DTC114YET1 DTC114TET1 DTC143TET1 DTC123EET1 DTC143EET1 DTC143ZET1 DTC124XET1 DTC123JET1 DTC115EET1 DTC144WET1 DTC114EET1/DTC124EET1/DTC144EET1/ DTC115EET1 DTC114YET1 DTC143TET1/DTC114TET1 DTC123EET1/DTC143EET1 DTC143ZET1 DTC124XET1 DTC123JET1 DTC144WET1 R1/R2 PD , POWER DISSIPATION (MILLIWATTS) 250 200 150 100 50 RJA = 600C/W 0 -50 0 50 100 TA, AMBIENT TEMPERATURE (C) 150 r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE Figure 1. Derating Curve 1.0 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) 1.0 Figure 2. Normalized Thermal Response http://onsemi.com 413 10 100 1000 DTC114EET1 Series 1 1000 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - DTC114EET1 TA=-25C 25C 0.1 75C 0.01 0.001 0 20 40 IC, COLLECTOR CURRENT (mA) VCE = 10 V TA=75C 25C -25C 100 10 50 1 10 IC, COLLECTOR CURRENT (mA) Figure 3. VCE(sat) versus IC Figure 4. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 2 1 0 25C 75C f = 1 MHz IE = 0 V TA = 25C TA=-25C 10 1 0.1 0.01 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 10 VO = 0.2 V TA=-25C 25C 75C 1 0.1 0 10 8 9 Figure 6. Output Current versus Input Voltage Figure 5. Output Capacitance V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 4 3 100 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 7. Input Voltage versus Output Current http://onsemi.com 414 50 10 DTC114EET1 Series 1000 1 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - DTC124EET1 IC/IB = 10 25C TA=-25C 0.1 75C 0.01 0.001 0 20 -25C 100 1 100 10 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 8. VCE(sat) versus IC Figure 9. DC Current Gain 4 100 3 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25C 2 1 75C 25C TA=-25C 10 1 0.1 0.01 VO = 5 V 0 0 0.001 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 10. Output Capacitance 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=-25C 10 25C 75C 1 0.1 0 10 8 10 Figure 11. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) TA=75C 25C 10 50 40 VCE = 10 V 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 12. Input Voltage versus Output Current http://onsemi.com 415 50 DTC114EET1 Series 10 1000 IC/IB = 10 1 25C TA=-25C 0.01 0 25C -25C 10 50 20 40 IC, COLLECTOR CURRENT (mA) TA=75C 100 75C 0.1 VCE = 10 V hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - DTC144EET1 10 IC, COLLECTOR CURRENT (mA) 1 Figure 13. VCE(sat) versus IC 1 100 IC, COLLECTOR CURRENT (mA) 0.4 TA=-25C 10 1 0.1 0.01 0.2 0 25C 75C 0.6 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) VO = 5 V 0.001 50 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 100 VO = 0.2 V TA=-25C 10 25C 75C 1 0.1 0 10 8 10 Figure 16. Output Current versus Input Voltage Figure 15. Output Capacitance V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) Figure 14. DC Current Gain f = 1 MHz IE = 0 V TA = 25C 0.8 100 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 17. Input Voltage versus Output Current http://onsemi.com 416 50 DTC114EET1 Series 1 300 IC/IB = 10 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - DTC114YET1 TA=-25C 25C 0.1 75C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 25C 200 -25C 150 100 50 0 80 TA=75C VCE = 10 250 2 1 4 6 Figure 18. VCE(sat) versus IC 100 f = 1 MHz lE = 0 V TA = 25C 3 TA=75C IC, COLLECTOR CURRENT (mA) 3.5 2.5 2 1.5 1 0.5 0 2 4 6 8 10 15 20 25 30 35 VR, REVERSE BIAS VOLTAGE (VOLTS) 40 45 25C -25C 10 VO = 5 V 1 50 Figure 20. Output Capacitance 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=-25C 25C 75C 1 0.1 0 10 8 Figure 21. Output Current versus Input Voltage 10 V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 90 100 Figure 19. DC Current Gain 4 0 8 10 15 20 40 50 60 70 80 IC, COLLECTOR CURRENT (mA) 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 22. Input Voltage versus Output Current http://onsemi.com 417 50 10 DTC114EET1 Series TYPICAL APPLICATIONS FOR NPN BRTs +12 V ISOLATED LOAD FROM P OR OTHER LOGIC Figure 23. Level Shifter: Connects 12 or 24 Volt Circuits to Logic +12 V VCC OUT IN LOAD Figure 24. Open Collector Inverter: Inverts the Input Signal Figure 25. Inexpensive, Unregulated Current Source http://onsemi.com 418 DTC144TT1 Preferred Device Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-59 package which is designed for low power surface mount applications. * * * * * * * Simplifies Circuit Design Reduces Board Space Reduces Component Count Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: Class 1 ESD Rating - Machine Model: Class B The SC-59 package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. Available in 8 mm embossed tape and reel Use the Device Number to order the 7 inch/3000 unit reel. http://onsemi.com NPN SILICON BIAS RESISTOR TRANSISTOR PIN 2 BASE (INPUT) PIN 3 COLLECTOR (OUTPUT) R1 R2 PIN 1 EMITTER (GROUND) 3 1 MAXIMUM RATINGS (TA = 25C unless otherwise noted) Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc Symbol Max Unit PD 230 (Note 1.) 338 (Note 2.) 1.8 (Note 1.) 2.7 (Note 2.) mW Rating Collector Current SC-59 CASE 318D STYLE 1 MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25C Derate above 25C C/W RJL 264 (Note 1.) 287 (Note 2.) C/W TJ, Tstg -55 to +150 C RJA Thermal Resistance - Junction-to-Lead Junction and Storage Temperature Range Device DTC144TT1 Device Marking R1 (K) R2 (K) Shipping DTC144TT1 8T 47 3000/Tape & Reel 1. FR-4 @ Minimum Pad 2. FR-4 @ 1.0 x 1.0 inch Pad April, 2001 - Rev. 0 8T Code M = Specific Device = Date Code ORDERING INFORMATION DEVICE MARKING AND RESISTOR VALUES Semiconductor Components Industries, LLC, 2001 8T M C/W 540 (Note 1.) 370 (Note 2.) Thermal Resistance - Junction-to-Ambient 2 419 Package Shipping SC-59 3000/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Publication Order Number: DTC144TT1/D DTC144TT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO - - 100 nAdc Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO - - 500 nAdc Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO - - 0.2 mAdc Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) V(BR)CBO 50 - - Vdc Collector-Emitter Breakdown Voltage (Note 3.) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 - - Vdc hFE 160 350 - VCE(sat) - - 0.25 Vdc Output Voltage (on) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k) VOL - - 0.2 Vdc Output Voltage (off) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k) VOH 4.9 - - Vdc R1 32.9 47 61.1 k OFF CHARACTERISTICS ON CHARACTERISTICS (Note 3.) DC Current Gain (VCE = 10 V, IC = 5.0 mA) Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 1 mA) Input Resistor 3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% PD, POWER DISSIPATION (mW) 350 300 250 200 150 100 50 0 -50 RJA = 370C/W 0 50 100 TA, AMBIENT TEMPERATURE (C) Figure 1. Derating Curve http://onsemi.com 420 150 DTC144TT1 TYPICAL APPLICATIONS FOR NPN BRTs +12 V ISOLATED LOAD FROM P OR OTHER LOGIC Figure 2. Level Shifter: Connects 12 or 24 Volt Circuits to Logic +12 V VCC OUT IN LOAD Figure 3. Open Collector Inverter: Inverts the Input Signal Figure 4. Inexpensive, Unregulated Current Source http://onsemi.com 421 J110 JFET - General Purpose N-Channel - Depletion N-Channel Junction Field Effect Transistors, depletion mode (Type A) designed for general purpose audio amplifiers, analog switches and choppers. * * * * * * * http://onsemi.com N-Channel for Higher Gain Drain and Source Interchangeable High AC Input Impedance High DC Input Resistance Low RDS(on) < 18 Fast Switching td(on) + tr = 8.0 ns (Typ) Low Noise en = 6.0 nV/Hz @ 10 Hz (Typ) 1 DRAIN 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Gate-Source Voltage VGS -25 Vdc Drain-Gate Voltage VDG -25 Vdc Gate Current IG 10 mAdc Total Device Dissipation PD 310 2.82 mW mW/C @ TA = 25C Derate above 25C Operating Junction Temp Range TJ 135 C Storage Temperature Range Tstg -65 to +150 C TO-92 CASE 29 STYLE 5 1 2 3 MARKING DIAGRAMS J110 YWW Y WW = Year = Work Week ORDERING INFORMATION Device Package Shipping J110 TO-92 5000 Units/Box J110RLRA TO-92 2000/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 September, 2001 - Rev. 3 422 Publication Order Number: 2N5638/D J110 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)GSS -25 - Vdc IGSS - - -3.0 -200 nAdc (VDS = 5.0 Vdc, ID = 1.0 Adc) VGS(off) -0.5 -4.0 Vdc (VDS = < 1.0 V, VGS = 0 V) RDS(on) 10 - mAdc IDSS 10 - mAdc Drain-Gate and Source-Gate On-Capacitance (VDS = VGS = 0, f = 1.0 MHz) Cdg(on) + Csg(on) - 85 pF Drain-Gate Off-Capacitance (VGS = -10 Vdc, f = 1.0 MHz) Cdg(off) - 15 pF Source-Gate Off-Capacitance (VGS = -10 Vdc, f = 1.0 MHz) Csg(off) - 15 pF STATIC CHARACTERISTICS (IG = -1.0 Adc) Gate-Source Breakdown Voltage Gate Reverse Current (VGS = -15 Vdc, VDS = 0) (VGS = -15 Vdc, VDS = 0, TA = 100C) Gate-Source Cutoff Voltage Drain Source On-Resistance Zero-Gate-Voltage Drain Current (Note 1.) (VDS = 15 Vdc) DYNAMIC CHARACTERISTICS 1. Pulse Width = 300 s, Duty Cycle = 3.0%. Crss, FEEDBACK CAPACITANCE (pF) Ciss, INPUT CAPACITANCE (pF) 100 80 60 VDS = 0 V 5V 40 10 V 20 0 0 -4 -8 -12 100 80 60 40 20 5V 10 V 0 -20 -16 VDS = 0 V 0 -4 -8 -12 VGS, GATE-SOURCE VOLTAGE (VOLTS) VGS, GATE-SOURCE VOLTAGE (VOLTS) Figure 1. Common Source Input Capacitance versus Gate-Source Voltage Figure 2. Common Source Reverse Feedback Capacitance versus Gate-Source Voltage 100 16 VGS = 0 V ID, DRAIN CURRENT (mA) 90 RDS(on), DRAIN-SOURCE ON-RESISTANCE (OHMS) -20 -16 12 RDS(on): VDS 0.1 V RDS(on): VGS = 0 V 8 VGS(off): VDS = 5 V VGS(off): ID = 1.0 A 4 -0.25 V 80 70 60 -0.5 V 50 40 -0.75 V 30 -1 V 20 -1.25 V 10 0 0 0 -1 -2 -3 -4 -5 -6 -7 -8 0 2 4 6 8 10 12 14 16 18 VGS(off), GATE-SOURCE CUTOFF VOLTAGE (VOLTS) VDS, DRAIN-SOURCE VOLTAGE (VOLTS) Figure 3. On-Resistance versus Gate-Source Cutoff Voltage Figure 4. Output Characteristic VGS(off) = -2 V http://onsemi.com 423 20 J110 200 300 VGS = 0 V ID, DRAIN CURRENT (mA) 140 120 -1 V 100 80 -1.5 V 60 40 -2 V 20 -2.5 V 0 0 2 4 6 10 8 12 14 16 VGS = 0 V 270 -0.5 V 160 18 240 -0.5 V 210 -1 V 180 -1.5 V 150 120 -2 V 90 60 -2.5 V 30 -3 V 0 0 20 4 2 6 8 10 12 14 16 18 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-SOURCE VOLTAGE (VOLTS) Figure 5. Output Characteristic VGS(off) = -3 V Figure 6. Output Characteristic VGS(off) = -4 V 400 VGS = 0 V 360 ID, DRAIN CURRENT (mA) ID, DRAIN CURRENT (mA) 180 -0.5 V 320 -1 V 280 240 -1.5 V 200 -2 V 160 -2.5 V 120 -3 V 80 -3.5 V 40 0 0 2 4 6 8 10 12 14 16 18 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) Figure 7. Output Characteristic VGS(off) = -5 V http://onsemi.com 424 20 20 ON Semiconductor N-Channel -- Depletion J111 J112 J113 1 DRAIN JFET Chopper Transistors 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain-Gate Voltage VDG -35 Vdc Gate-Source Voltage VGS -35 Vdc Gate Current IG 50 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 350 2.8 mW mW/C Lead Temperature TL 300 C TJ, Tstg -65 to +150 C Operating and Storage Junction Temperature Range 1 2 3 CASE 29-11, STYLE 5 TO-92 (TO-226AA) ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)GSS 35 -- Vdc IGSS -- -1.0 nAdc -3.0 -1.0 -0.5 -10 -5.0 -3.0 -- 1.0 20 5.0 2.0 -- -- -- -- -- -- 30 50 100 OFF CHARACTERISTICS Gate-Source Breakdown Voltage (IG = -1.0 Adc) Gate Reverse Current (VGS = -15 Vdc) Gate Source Cutoff Voltage (VDS = 5.0 Vdc, ID = 1.0 Adc) VGS(off) J111 J112 J113 Drain-Cutoff Current (VDS = 5.0 Vdc, VGS = -10 Vdc) ID(off) Vdc nAdc ON CHARACTERISTICS Zero-Gate-Voltage Drain Current(1) (VDS = 15 Vdc) Static Drain-Source On Resistance (VDS = 0.1 Vdc) IDSS J111 J112 J113 mAdc rDS(on) J111 J112 J113 Drain Gate and Source Gate On-Capacitance (VDS = VGS = 0, f = 1.0 MHz) Cdg(on) + Csg(on) -- 28 pF Drain Gate Off-Capacitance (VGS = -10 Vdc, f = 1.0 MHz) Cdg(off) -- 5.0 pF Source Gate Off-Capacitance (VGS = -10 Vdc, f = 1.0 MHz) Csg(off) -- 5.0 pF 1. Pulse Width = 300 s, Duty Cycle = 3.0%. Semiconductor Components Industries, LLC, 2001 June, 2001 - Rev. 1 425 Publication Order Number: J111/D J111 J112 J113 TYPICAL SWITCHING CHARACTERISTICS 1000 TJ = 25C 500 RK = RD 200 J111 J112 J113 100 500 VGS(off) = 12 V = 7.0 V = 5.0 V 50 20 10 RK = 0 5.0 RK = RD 200 t r , RISE TIME (ns) t d(on), TURN-ON DELAY TIME (ns) 1000 100 20 10 RK = 0 2.0 1.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 ID, DRAIN CURRENT (mA) 20 30 1.0 0.5 0.7 1.0 50 2.0 3.0 5.0 7.0 10 ID, DRAIN CURRENT (mA) Figure 1. Turn-On Delay Time 1000 1000 TJ = 25C 500 J111 J112 J113 200 100 500 VGS(off) = 12 V = 7.0 V = 5.0 V 20 10 RK = 0 5.0 RK = RD 200 RK = RD 50 20 30 50 Figure 2. Rise Time t f , FALL TIME (ns) t d(off) , TURN-OFF DELAY TIME (ns) TJ = 25C VGS(off) = 12 V = 7.0 V = 5.0 V 50 5.0 2.0 J111 J112 J113 100 TJ = 25C J111 J112 J113 VGS(off) = 12 V = 7.0 V = 5.0 V 50 20 10 RK = 0 5.0 2.0 2.0 1.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 ID, DRAIN CURRENT (mA) 20 30 1.0 0.5 0.7 1.0 50 Figure 3. Turn-Off Delay Time RD SET VDS(off) = 10 V RK RGEN 50 OUTPUT 50 VGEN INPUT PULSE tr 0.25 ns tf 0.5 ns PULSE WIDTH = 2.0 s DUTY CYCLE 2.0% RT RGG 50 VGG RGG RK RD(RT 50) RD RD RT 50 Figure 5. Switching Time Test Circuit 20 30 50 Figure 4. Fall Time +VDD INPUT 2.0 3.0 5.0 7.0 10 ID, DRAIN CURRENT (mA) NOTE 1 The switching characteristics shown above were measured using a test circuit similar to Figure 5. At the beginning of the switching interval, the gate voltage is at Gate Supply Voltage (-VGG). The Drain-Source Voltage (VDS) is slightly lower than Drain Supply Voltage (VDD) due to the voltage divider. Thus Reverse Transfer Capacitance (Crss) or Gate-Drain Capacitance (Cgd) is charged to VGG + VDS. During the turn-on interval, Gate-Source Capacitance (Cgs) discharges through the series combination of RGen and RK. Cgd must discharge to VDS(on) through RG and RK in series with the parallel combination of effective load impedance (RD) and Drain-Source Resistance (rds). During the turn-off, this charge flow is reversed. Predicting turn-on time is somewhat difficult as the channel resistance rds is a function of the gate-source voltage. While Cgs discharges, VGS approaches zero and rds decreases. Since Cgd discharges through rds, turn-on time is non-linear. During turn-off, the situation is reversed with rds increasing as Cgd charges. The above switching curves show two impedance conditions; 1) RK is equal to RD, which simulates the switching behavior of cascaded stages where the driving source impedance is normally the load impedance of the previous stage, and 2) RK = 0 (low impedance) the driving source impedance is that of the generator. http://onsemi.com 426 20 15 J112 10 J111 10 C, CAPACITANCE (pF) y fs, FORWARD TRANSFER ADMITTANCE (mmhos J111 J112 J113 J113 7.0 5.0 Tchannel = 25C VDS = 15 V 3.0 Cgs 7.0 5.0 Cgd 3.0 2.0 Tchannel = 25C (Cds IS NEGLIGIBLE) 1.5 2.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 ID, DRAIN CURRENT (mA) 20 30 1.0 0.03 0.05 0.1 50 Figure 6. Typical Forward Transfer Admittance IDSS = 10 160 mA 25 mA 50mA 75mA 100mA 80 0 Tchannel = 25C 0 1.0 2.0 3.0 4.0 5.0 6.0 VGS, GATE-SOURCE VOLTAGE (VOLTS) 7.0 8.0 ID = 1.0 mA VGS = 0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -70 Figure 8. Effect of Gate-Source Voltage On Drain-Source Resistance 90 10 Tchannel = 25C 9.0 80 70 8.0 7.0 rDS(on) @ VGS = 0 60 50 6.0 VGS(off) -40 -10 20 50 80 110 Tchannel, CHANNEL TEMPERATURE (C) 140 170 Figure 9. Effect of Temperature On Drain-Source On-State Resistance 5.0 40 4.0 30 3.0 20 2.0 10 1.0 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 IDSS, ZERO-GATE-VOLTAGE DRAIN CURRENT (mA) VGS, GATE-SOURCE VOLTAGE (VOLTS) rds(on), DRAIN-SOURCE ON-STATE RESISTANCE (OHMS) 100 30 2.0 125mA 120 40 10 Figure 7. Typical Capacitance rds(on), DRAIN-SOURCE ON-STATE RESISTANCE (NORMALIZED) rds(on), DRAIN-SOURCE ON-STATE RESISTANCE (OHMS) 200 0.3 0.5 1.0 3.0 5.0 VR, REVERSE VOLTAGE (VOLTS) NOTE 2 The Zero-Gate-Voltage Drain Current (IDSS), is the principle determinant of other J-FET characteristics. Figure 10 shows the relationship of Gate-Source Off Voltage (VGS(off) and Drain- Source On Resistance (rds(on)) to IDSS. Most of the devices will be within 10% of the values shown in Figure 10. This data will be useful in predicting the characteristic variations for a given part number. For example: Unknown rds(on) and VGS range for an J112 The electrical characteristics table indicates that an J112 has an IDSS range of 25 to 75 mA. Figure 10, shows rds(on) = 52 Ohms for IDSS = 25 mA and 30 Ohms for IDSS = 75 mA. The corresponding VGS values are 2.2 volts and 4.8 volts. Figure 10. Effect of IDSS On Drain-Source Resistance and Gate-Source Voltage http://onsemi.com 427 ON Semiconductor J309 J310 JFET VHF/UHF Amplifiers N-Channel - Depletion ON Semiconductor Preferred Devices MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDS 25 Vdc Gate-Source Voltage VGS 25 Vdc Forward Gate Current IGF 10 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 350 2.8 mW mW/C Junction Temperature Range TJ -65 to +125 C Storage Temperature Range Tstg -65 to +150 C 1 2 3 CASE 29-11, STYLE 5 TO-92 (TO-226AA) 1 DRAIN 3 GATE 2 SOURCE ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)GSS -25 - - Vdc - - - - -1.0 -1.0 nAdc Adc -1.0 -2.0 - - -4.0 -6.5 12 24 - - 30 60 - - 1.0 OFF CHARACTERISTICS Gate-Source Breakdown Voltage (IG = -1.0 Adc, VDS = 0) Gate Reverse Current (VGS = -15 Vdc, VDS = 0, TA = 25C) (VGS = -15 Vdc, VDS = 0, TA = +125C) Gate Source Cutoff Voltage (VDS = 10 Vdc, ID = 1.0 nAdc) IGSS VGS(off) J309 J310 Vdc ON CHARACTERISTICS Zero-Gate-Voltage Drain Current(1) (VDS = 10 Vdc, VGS = 0) IDSS J309 J310 Gate-Source Forward Voltage (VDS = 0, IG = 1.0 mAdc) Semiconductor Components Industries, LLC, 2001 October, 2001 - Rev. 0 VGS(f) 428 mAdc Vdc Publication Order Number: J309/D J309 J310 Characteristic Symbol Min Typ Max - - 0.7 0.5 - - Unit SMALL-SIGNAL CHARACTERISTICS Common-Source Input Conductance (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) Re(yis) mmhos J309 J310 Common-Source Output Conductance (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) Re(yos) - 0.25 - mmhos Common-Gate Power Gain (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) Gpg - 16 - dB Common-Source Forward Transconductance (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) Re(yfs) - 12 - mmhos Common-Gate Input Conductance (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) Re(yig) - 12 - mmhos 10000 8000 - - 20000 18000 - - 250 - - 13000 12000 - - - - 100 150 - - 1. Pulse Test: Pulse Width 300 s, Duty Cycle 3.0%. SMALL-SIGNAL CHARACTERISTICS (continued) Common-Source Forward Transconductance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) mhos gfs J309 J310 Common-Source Output Conductance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) gos Common-Gate Forward Transconductance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) mhos mhos gfg J309 J310 Common-Gate Output Conductance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) mhos gog J309 J310 Gate-Drain Capacitance (VDS = 0, VGS = -10 Vdc, f = 1.0 MHz) Cgd - 1.8 2.5 pF Gate-Source Capacitance (VDS = 0, VGS = -10 Vdc, f = 1.0 MHz) Cgs - 4.3 5.0 pF en - 10 - nV Hz FUNCTIONAL CHARACTERISTICS I D , DRAIN CURRENT (mA) 60 50 40 VDS = 10 V TA = -55C +25C IDSS +25C 10 -5.0 50 40 30 20 60 +150C 20 +25C -55C 30 +150C 10 -1.0 -4.0 -3.0 -2.0 ID - VGS, GATE-SOURCE VOLTAGE (VOLTS) IDSS - VGS, GATE-SOURCE CUTOFF VOLTAGE (VOLTS) 0 0 Yfs , FORWARD TRANSCONDUCTANCE (mmhos) 70 70 IDSS, SATURATION DRAIN CURRENT (mA) Equivalent Short-Circuit Input Noise Voltage (VDS = 10 Vdc, ID = 10 mAdc, f = 100 Hz) 35 30 TA = -55C VDS = 10 V f = 1.0 MHz 25 +25C 20 +150C 15 -55C 10 +150C 5.0 0 +25C 5.0 4.0 3.0 2.0 1.0 VGS, GATE-SOURCE VOLTAGE (VOLTS) Figure 1. Drain Current and Transfer Characteristics versus Gate-Source Voltage Figure 2. Forward Transconductance versus Gate-Source Voltage http://onsemi.com 429 0 J309 J310 10 k 100 1.0 k VGS(off) = -2.3 V = VGS(off) = -5.7 V = Yos 10 1.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 100 0.01 RDS CAPACITANCE (pF) Yfs Yfs 120 7.0 72 Cgs 4.0 48 0 10 9.0 0 100 1.0 |S12|, |S22| 2.4 0.79 0.39 0.73 0.33 0.67 0.27 S22 0.048 0.98 VDS = 10 V ID = 10 mA TA = 25C 0.036 0.96 0.024 0.94 0.61 0.21 0.6 200 300 500 f, FREQUENCY (MHz) 700 0.55 0.15 100 1000 -40 200 300 500 f, FREQUENCY (MHz) 700 1000 Figure 6. Common-Gate S Parameter Magnitude versus Frequency 11, 12 -20 120 -20 21 0.012 0.92 S12 12, 22 -20 87 22 86 -40 100 85 -60 80 84 -80 60 83 -100 40 82 -120 20 100 21, 22 0 11 21 22 -20 -60 30 -80 -40 -100 150 140 130 20 10 0 100 -120 12 11 -140 VDS = 10 V ID = 10 mA TA = 25C 200 300 500 f, FREQUENCY (MHz) 0 0 S11 21, 11 180 50 160 2.0 0.060 1.00 Y12 40 3.0 |S21|, |S11| Figure 5. Common-Gate Y Parameter Magnitude versus Frequency 170 4.0 0.85 0.45 1.2 Y22 6.0 5.0 3.0 1.8 Y21 12 6.0 S21 Y11 18 7.0 Figure 4. On Resistance and Junction Capacitance versus Gate-Source Voltage Y12 (mmhos) |Y11|, |Y21 |, |Y22 | (mmhos) VDS = 10 V ID = 10 mA TA = 25C 8.0 VGS, GATE SOURCE VOLTAGE (VOLTS) Figure 3. Common-Source Output Admittance and Forward Transconductance versus Drain Current 24 24 Cgd 1.0 ID, DRAIN CURRENT (mA) 30 96 -160 -180 700 -200 1000 Figure 7. Common-Gate Y Parameter Phase-Angle versus Frequency 21 12 VDS = 10 V ID = 10 mA TA = 25C 200 300 500 f, FREQUENCY (MHz) 11 700 -60 -80 -100 1000 Figure 8. S Parameter Phase-Angle versus Frequency http://onsemi.com 430 0.90 R DS , ON RESISTANCE (OHMS) 10 1.0 k Yos, OUTPUT ADMITTANCE ( mhos) Yfs , FORWARD TRANSCONDUCTANCE (mhos) 100 k ON Semiconductor M1MA141KT1 M1MA142KT1 Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70 package which is designed for low power surface mount applications. * Fast trr, < 3.0 ns * Low CD, < 2.0 pF * Available in 8 mm Tape and Reel Use M1MA141/2KT1 to order the 7 inch/3000 unit reel. Use M1MA141/2KT3 to order the 13 inch/10,000 unit reel. ON Semiconductor Preferred Devices 3 1 2 CASE 419-04, STYLE 2 SC-70/SOT-323 MAXIMUM RATINGS (TA = 25C) Rating Reverse Voltage Symbol Value Unit VR 40 Vdc M1MA141KT1 M1MA142KT1 Peak Reverse Voltage VRM M1MA141KT1 Vdc 40 M1MA142KT1 80 Forward Current IF 100 mAdc IFM 225 mAdc IFSM(1) 500 mAdc Symbol Max Unit Power Dissipation PD 150 mW Junction Temperature TJ 150 C Storage Temperature Tstg -55 ~ +150 C Peak Forward Current Peak Forward Surge Current CATHODE 3 80 ANODE NO CONNECTION 1 2 THERMAL CHARACTERISTICS Rating Preferred devices are ON Semiconductor recommended choices for future use and best overall value. ELECTRICAL CHARACTERISTICS (TA = 25C) Characteristic Reverse Voltage Leakage Current M1MA141KT1 Symbol Condition Min Max Unit IR VR = 35 V -- 0.1 Adc VR = 75 V -- 0.1 VF IF = 100 mA -- 1.2 Vdc VR IR = 100 A 40 -- Vdc 80 -- M1MA142KT1 Forward Voltage Reverse Breakdown Voltage M1MA141KT1 M1MA142KT1 Diode Capacitance CD VR = 0, f = 1.0 MHz -- 2.0 pF Reverse Recovery Time (Figure 1) trr(2) IF = 10 mA, VR = 6.0 V, RL = 100 , Irr = 0.1 IR -- 3.0 ns 1. t = 1 SEC 2. trr Test Circuit DEVICE MARKING -- EXAMPLE Marking Symbol Type No. 141K 142K Symbol MH MI MHX The "X" represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 3 431 Publication Order Number: M1MA141KT1/D M1MA141KT1 M1MA142KT1 RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE tr OUTPUT PULSE tp t t 10% RL A trr IF Irr = 0.1 IR 90% VR IF = 10 mA VR = 6 V RL = 100 tp = 2 s tr = 0.35 ns Figure 1. Recovery Time Equivalent Test Circuit 10 IR , REVERSE CURRENT (A) TA = 85C 10 TA = -40C 1.0 0.1 TA = 25C 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) TA = 125C 1.0 TA = 85C 0.1 TA = 55C 0.01 0.001 1.2 TA = 150C TA = 25C 0 10 Figure 2. Forward Voltage 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Reverse Current 0.68 CD, DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 100 0.64 0.6 0.56 0.52 0 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Diode Capacitance http://onsemi.com 432 8 50 ON Semiconductor M1MA141WAT1 M1MA142WAT1 Common Anode Silicon Dual Switching Diode ON Semiconductor Preferred Devices This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70 package which is designed for low power surface mount applications. * Fast trr, < 10 ns * Low CD, < 15 pF * Available in 8 mm Tape and Reel Use M1MA141/2WAT1 to order the 7 inch/3000 unit reel. Use M1MA141/2WAT3 to order the 13 inch/10,000 unit reel. 3 1 2 CASE 419-04, STYLE 4 SC-70/SOT-323 ANODE 3 MAXIMUM RATINGS (TA = 25C) Rating Reverse Voltage g Symbol Value Unit VR 40 Vdc M1MA141WAT1 M1MA142WAT1 Peak Reverse Voltage g M1MA141WAT1 80 VRM M1MA142WAT1 Forward Current 80 IF Single CATHODE 2 150 IFM Single mAdc 225 Dual Peak Forward Surge g Current 1 mAdc 100 Dual Peak Forward Current Vdc 40 340 Single mAdc 500 IFSM(1) Dual 750 THERMAL CHARACTERISTICS Rating Symbol Max Unit Power Dissipation PD 150 mW Junction Temperature TJ 150 C Storage Temperature Tstg -55 ~ +150 C ELECTRICAL CHARACTERISTICS (TA = 25C) Symbol Condition Min Max Unit IR VR = 35 V -- 0.1 Adc VR = 75 V -- 0.1 VF IF = 100 mA -- 1.2 Vdc VR IR = 100 A 40 -- Vdc 80 -- Diode Capacitance CD VR = 0, f = 1.0 MHz -- 15 pF Reverse Recovery Time (Figure 1) trr(2) IF = 10 mA, VR = 6.0 V, RL = 100 , Irr = 0.1 IR -- 10 ns Characteristic Reverse Voltage g Leakage g Current M1MA141WAT1 M1MA142WAT1 Forward Voltage Reverse Breakdown Voltage g M1MA141WAT1 M1MA142WAT1 1. t = 1 SEC 2. trr Test Circuit Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 3 433 Publication Order Number: M1MA141WAT1/D M1MA141WAT1 M1MA142WAT1 DEVICE MARKING -- EXAMPLE Marking Symbol Type No. 141WA 142WA Symbol MN MO MNX The "X" represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured. RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE tr OUTPUT PULSE tp t t 10% RL A trr IF Irr = 0.1 IR 90% VR IF = 10 mA VR = 6 V RL = 100 tp = 2 s tr = 0.35 ns Figure 1. Recovery Time Equivalent Test Circuit 10 IR , REVERSE CURRENT (A) 100 TA = 85C 10 TA = -40C 1.0 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) TA = 85C 0.1 TA = 55C 0.01 0.001 1.2 TA = 125C 1.0 TA = 25C 0 10 Figure 2. Forward Voltage 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Reverse Current 0.68 CD , DIODE CAPACITANCE (pF) 0.1 TA = 25C TA = 150C 0.64 0.6 0.56 0.52 0 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Diode Capacitance http://onsemi.com 434 8 50 ON Semiconductor M1MA141WKT1 M1MA142WKT1 Common Cathode Silicon Dual Switching Diode ON Semiconductor Preferred Devices This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70 package which is designed for low power surface mount applications. * Fast trr, < 3.0 ns * Low CD, < 2.0 pF * Available in 8 mm Tape and Reel Use M1MA141/2WKT1 to order the 7 inch/3000 unit reel. Use M1MA141/2WKT3 to order the 13 inch/10,000 unit reel. 3 1 2 CASE 419-04, STYLE 5 SC-70/SOT-323 CATHODE 3 MAXIMUM RATINGS (TA = 25C) Rating Reverse Voltage g Symbol Value Unit VR 40 Vdc M1MA141WKT1 M1MA142WKT1 Peak Reverse Voltage g M1MA141WKT1 80 VRM M1MA142WKT1 Forward Current IF ANODE 2 mAdc 100 Dual 150 IFM Single mAdc 225 Dual Peak Forward Surge g Current 1 80 Single Peak Forward Current Vdc 40 340 Single mAdc 500 IFSM(1) Dual 750 THERMAL CHARACTERISTICS Rating Symbol Max Unit Power Dissipation PD 150 mW Junction Temperature TJ 150 C Storage Temperature Tstg -55 ~ +150 C ELECTRICAL CHARACTERISTICS (TA = 25C) Symbol Condition Min Max Unit IR VR = 35 V -- 0.1 Adc VR = 75 V -- 0.1 VF IF = 100 mA -- 1.2 Vdc VR IR = 100 A 40 -- Vdc 80 -- Diode Capacitance CD VR = 0, f = 1.0 MHz -- 2.0 pF Reverse Recovery Time (Figure 1) trr(2) IF = 10 mA, VR = 6.0 V, RL = 100 , Irr = 0.1 IR -- 3.0 ns Characteristic Reverse Voltage g Leakage g Current M1MA141WKT1 M1MA142WKT1 Forward Voltage Reverse Breakdown Voltage g M1MA141WKT1 M1MA142WKT1 1. t = 1 SEC 2. trr Test Circuit Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 3 435 Publication Order Number: M1MA141WKT1/D M1MA141WKT1 M1MA142WKT1 DEVICE MARKING -- EXAMPLE Marking Symbol Type No. 141WK 142WK Symbol MT MU MTX The "X" represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured. RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE tr OUTPUT PULSE tp t t 10% RL A trr IF Irr = 0.1 IR 90% VR IF = 10 mA VR = 6 V RL = 100 tp = 2 s tr = 0.35 ns Figure 1. Recovery Time Equivalent Test Circuit 10 IR , REVERSE CURRENT (A) 100 TA = 85C 10 TA = -40C 1.0 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) TA = 85C 0.1 TA = 55C 0.01 0.001 1.2 TA = 125C 1.0 TA = 25C 0 10 Figure 2. Forward Voltage 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Reverse Current 0.68 CD , DIODE CAPACITANCE (pF) 0.1 TA = 25C TA = 150C 0.64 0.6 0.56 0.52 0 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Diode Capacitance http://onsemi.com 436 8 50 ON Semiconductor Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC-59 package which is designed for low power surface mount applications. * Fast trr, < 3.0 ns * Low CD, < 2.0 pF * Available in 8 mm Tape and Reel Use M1MA151/2AT1 to order the 7 inch/3000 unit reel. Use M1MA151/2AT3 to order the 13 inch/10,000 unit reel. M1MA151AT1 M1MA152AT1 ON Semiconductor Preferred Devices SC-59 PACKAGE SINGLE SILICON SWITCHING DIODES 40/80 V-100 mA SURFACE MOUNT MAXIMUM RATINGS (TA = 25C) Rating Reverse Voltage Symbol Value Unit VR 40 Vdc M1MA151AT1 M1MA152AT1 Peak Reverse Voltage 3 2 1 80 VRM M1MA151AT1 Vdc 40 M1MA152AT1 CASE 318D-04, STYLE 4 SC-59 80 Forward Current IF 100 mAdc IFM 225 mAdc IFSM(1) 500 mAdc Symbol Max Unit Power Dissipation PD 200 mW Junction Temperature TJ 150 C Storage Temperature Tstg -55 to +150 C Peak Forward Current Peak Forward Surge Current ANODE 3 THERMAL CHARACTERISTICS Rating 2 1 CATHODE NO CONNECTION ELECTRICAL CHARACTERISTICS (TA = 25C) Characteristic Reverse Voltage Leakage Current M1MA151AT1 Symbol Condition Min Max Unit IR VR = 35 V -- 0.1 Adc VR = 75 V -- 0.1 VF IF = 100 mA -- 1.2 Vdc VR IR = 100 A 40 -- Vdc 80 -- M1MA152AT1 Forward Voltage Reverse Breakdown Voltage M1MA151AT1 M1MA152AT1 Diode Capacitance CD VR = 0, f = 1.0 MHz -- 2.0 pF Reverse Recovery Time (Figure 1) trr(2) IF = 10 mA, VR = 6.0 V, RL = 100 , Irr = 0.1 IR -- 3.0 ns 1. t = 1 SEC 2. trr Test Circuit Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 4 437 Publication Order Number: M1MA151AT1/D M1MA151AT1 M1MA152AT1 RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE tr OUTPUT PULSE tp t trr t 10% RL A IF Irr = 0.1 IR 90% VR tp = 2 s tr = 0.35 ns Figure 1. Reverse Recovery Time Equivalent Test Circuit DEVICE MARKING Marking Symbol Type No. 151A 152A Symbol MA MB MAX The "X" represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured. http://onsemi.com 438 IF = 10 mA VR = 6 V RL = 100 ON Semiconductor Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC-59 package which is designed for low power surface mount applications. * Fast trr, < 3.0 ns * Low CD, < 2.0 pF * Available in 8 mm Tape and Reel Use M1MA151/2KT1 to order the 7 inch/3000 unit reel. Use M1MA151/2KT3 to order the 13 inch/10,000 unit reel. M1MA151KT1 M1MA152KT1 ON Semiconductor Preferred Devices SC-59 PACKAGE SINGLE SILICON SWITCHING DIODES 40/80 V-100 mA SURFACE MOUNT MAXIMUM RATINGS (TA = 25C) Rating Reverse Voltage M1MA151KT1 Symbol Value Unit VR 40 Vdc M1MA152KT1 Peak Reverse Voltage M1MA151KT1 1 VRM Vdc 40 CASE 318D-04, STYLE 2 SC-59 80 IF 100 mAdc IFM 225 mAdc IFSM(1) 500 mAdc Symbol Max Unit Power Dissipation PD 200 mW Junction Temperature TJ 150 C Storage Temperature Tstg -55 to +150 C Peak Forward Current Peak Forward Surge Current 2 80 M1MA152KT1 Forward Current 3 CATHODE 3 THERMAL CHARACTERISTICS Rating 2 ANODE 1 NO CONNECTION ELECTRICAL CHARACTERISTICS (TA = 25C) Characteristic Reverse Voltage Leakage Current M1MA151KT1 Symbol Condition Min Max Unit IR VR = 35 V -- 0.1 Adc VR = 75 V -- 0.1 VF IF = 100 mA -- 1.2 Vdc VR IR = 100 A 40 -- Vdc 80 -- M1MA152KT1 Forward Voltage Reverse Breakdown Voltage M1MA151KT1 M1MA152KT1 Diode Capacitance CD VR = 0, f = 1.0 MHz -- 2.0 pF Reverse Recovery Time (Figure 1) trr(2) IF = 10 mA, VR = 6.0 V, RL = 100 , Irr = 0.1 IR -- 3.0 ns 1. t = 1 SEC 2. trr Test Circuit Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 4 439 Publication Order Number: M1MA151KT1/D M1MA151KT1 M1MA152KT1 RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE tr OUTPUT PULSE tp t trr t 10% RL A IF Irr = 0.1 IR 90% VR tp = 2 s tr = 0.35 ns Figure 1. Reverse Recovery Time Equivalent Test Circuit DEVICE MARKING -- EXAMPLE Marking Symbol Type No. 151K 152K Symbol MH MI MHX The "X" represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured. http://onsemi.com 440 IF = 10 mA VR = 6 V RL = 100 ON Semiconductor M1MA151WAT1 M1MA152WAT1 Common Anode Silicon Dual Switching Diodes ON Semiconductor Preferred Devices These Common Anode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC-59 package which is designed for low power surface mount applications. * Fast trr, < 10 ns * Low CD, < 15 pF * Available in 8 mm Tape and Reel Use M1MA151/2WAT1 to order the 7 inch/3000 unit reel. Use M1MA151/2WAT3 to order the 13 inch/10,000 unit reel. 3 2 1 CASE 318D-04, STYLE 5 SC-59 ANODE 3 MAXIMUM RATINGS (TA = 25C) Rating Reverse Voltage g Symbol Value Unit VR 40 Vdc M1MA151WAT1 M1MA152WAT1 Peak Reverse Voltage g M1MA151WAT1 80 VRM M1MA152WAT1 Forward Current IF CATHODE 1 mAdc 100 Dual 150 IFM Single mAdc 225 Dual Peak Forward Surge g Current 2 80 Single Peak Forward Current Vdc 40 340 Single mAdc 500 IFSM(1) Dual 750 THERMAL CHARACTERISTICS Rating Symbol Max Unit Power Dissipation PD 200 mW Junction Temperature TJ 150 C Storage Temperature Tstg -55 to +150 C ELECTRICAL CHARACTERISTICS (TA = 25C) Symbol Condition Min Max Unit IR VR = 35 V -- 0.1 Adc VR = 75 V -- 0.1 VF IF = 100 mA -- 1.2 Vdc VR IR = 100 A 40 -- Vdc 80 -- Diode Capacitance CD VR = 0, f = 1.0 MHz -- 15 pF Reverse Recovery Time (Figure 1) trr(2) IF = 10 mA, VR = 6.0 V, RL = 100 , Irr = 0.1 IR -- 10 ns Characteristic Reverse Voltage g Leakage g Current M1MA151WAT1 M1MA152WAT1 Forward Voltage Reverse Breakdown Voltage g M1MA151WAT1 M1MA152WAT1 1. t = 1 SEC 2. trr Test Circuit Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 4 441 Publication Order Number: M1MA151WAT1/D M1MA151WAT1 M1MA152WAT1 RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE tr OUTPUT PULSE tp t trr t 10% RL A IF Irr = 0.1 IR 90% VR tp = 2 s tr = 0.35 ns Figure 1. Reverse Recovery Time Equivalent Test Circuit DEVICE MARKING -- EXAMPLE Marking Symbol Type No. 151WA 152WA Symbol MN MO MNX The "X" represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured. http://onsemi.com 442 IF = 10 mA VR = 6 V RL = 100 ON Semiconductor Common Cathode Silicon Dual Switching Diodes M1MA151WKT1 M1MA152WKT1 ON Semiconductor Preferred Devices These Common Cathode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC-59 package which is designed for low power surface mount applications. * Fast trr, < 3.0 ns * Low CD, < 2.0 pF * Available in 8 mm Tape and Reel Use M1MA151/2WKT1 to order the 7 inch/3000 unit reel. Use M1MA151/2WKT3 to order the 13 inch/10,000 unit reel. 3 2 1 CASE 318D-04, STYLE 3 SC-59 CATHODE 3 MAXIMUM RATINGS (TA = 25C) Rating Reverse Voltage g Symbol Value Unit VR 40 Vdc M1MA151WKT1 M1MA152WKT1 Peak Reverse Voltage g M1MA151WKT1 80 VRM M1MA152WKT1 Forward Current IF 1 ANODE mAdc 100 Dual 150 IFM Single mAdc 225 Dual Peak Forward Surge g Current 2 80 Single Peak Forward Current Vdc 40 340 Single mAdc 500 IFSM(1) Dual 750 THERMAL CHARACTERISTICS Rating Symbol Max Unit Power Dissipation PD 200 mW Junction Temperature TJ 150 C Storage Temperature Tstg -55 to +150 C ELECTRICAL CHARACTERISTICS (TA = 25C) Symbol Condition Min Max Unit IR VR = 35 V -- 0.1 Adc VR = 75 V -- 0.1 VF IF = 100 mA -- 1.2 Vdc VR IR = 100 A 40 -- Vdc 80 -- Diode Capacitance CD VR = 0, f = 1.0 MHz -- 2.0 pF Reverse Recovery Time (Figure 1) trr(2) IF = 10 mA, VR = 6.0 V, RL = 100 , Irr = 0.1 IR -- 3.0 ns Characteristic Reverse Voltage g Leakage g Current M1MA151WKT1 M1MA152WKT1 Forward Voltage Reverse Breakdown Voltage g M1MA151WKT1 M1MA152WKT1 1. t = 1 SEC 2. trr Test Circuit Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 4 443 Publication Order Number: M1MA151WKT1/D M1MA151WKT1 M1MA152WKT1 RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE tr OUTPUT PULSE tp t trr t 10% RL A IF Irr = 0.1 IR 90% VR tp = 2 s tr = 0.35 ns Figure 1. Reverse Recovery Time Equivalent Test Circuit DEVICE MARKING -- EXAMPLE Marking Symbol Type No. 151WK 152WK Symbol MT MU MTX The "X" represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured. http://onsemi.com 444 IF = 10 mA VR = 6 V RL = 100 M1MA174T1 Preferred Device Silicon Switching Diode MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 100 V Recurrent Peak Forward Current IF 200 mA IFM(surge) 500 mA Total Power Dissipation, One Diode Loaded TA = 25C Derate above 25C Mounted on a Ceramic Substrate (10 x 8 x 0.6 mm) PD 200 mW 1.6 mW/C Operating and Storage Junction Temperature Range TJ, Tstg Peak Forward Surge Current Pulse Width = 10 s http://onsemi.com 3 CATHODE 3 C -55 to +150 1 2 SC-70/SOT-323 CASE 419 STYLE 2 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient One Diode Loaded Mounted on a Ceramic Substrate (10 x 8 x 0.6 mm) Symbol Max Unit RJA 0.625 C/mW MARKING DIAGRAM J6 M ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 100 Adc) Symbol Min Max Unit V(BR) 100 - Vdc - - 25 5.0 nAdc Adc Reverse Voltage Leakage Current (VR = 20 Vdc) (VR = 75 Vdc) IR Diode Capacitance (VR = 0, f = 1.0 MHz) CT - 4.0 pF Forward Voltage (IF = 10 mAdc) VF - 1.0 Vdc Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1) trr - 4.0 ns Semiconductor Components Industries, LLC, 2001 April, 2001 - Rev. 0 1 ANODE J6 M = Device Code = Date Code ORDERING INFORMATION Device M1MA174T1 Package Shipping SC-70 3000/Tape & Reel Preferred devices are recommended choices for future use and best overall value. 445 Publication Order Number: M1MA174T1/D M1MA174T1 820 +10 V 2.0 k IF 100 H tp tr 0.1 F IF t trr 10% t 0.1 F DUT 50 OUTPUT PULSE GENERATOR 90% 50 INPUT SAMPLING OSCILLOSCOPE IR VR INPUT SIGNAL iR(REC) = 1.0 mA OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr Figure 1. Recovery Time Equivalent Test Circuit TA = 85C I R , REVERSE CURRENT ( A) 10 TA = -40C 10 TA = 25C 1.0 0.1 0.2 0.4 0.6 0.8 1.0 TA = 125C 1.0 TA = 85C 0.1 TA = 55C 0.01 0.001 1.2 TA = 150C TA = 25C 10 0 20 30 VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 3. Leakage Current 0.68 C D , DIODE CAPACITANCE (pF) I F, FORWARD CURRENT (mA) 100 0.64 0.60 0.56 0.52 0 2.0 4.0 6.0 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance http://onsemi.com 446 8.0 40 50 ON Semiconductor MBD101 MMBD101LT1 Schottky Barrier Diodes Designed primarily for UHF mixer applications but suitable also for use in detector and ultra-fast switching circuits. Supplied in an inexpensive plastic package for low-cost, high-volume consumer requirements. Also available in Surface Mount package. * Low Noise Figure -- 6.0 dB Typ @ 1.0 GHz * Very Low Capacitance -- Less Than 1.0 pF @ Zero Volts * High Forward Conductance -- 0.5 Volts (Typ) @ IF = 10 mA ON Semiconductor Preferred Devices SILICON SCHOTTKY BARRIER DIODES MAXIMUM RATINGS MBD101 Rating MMBD101LT1 Symbol Value Unit Reverse Voltage VR 7.0 Volts Forward Power Dissipation @ TA = 25C Derate above 25C PF Junction Temperature TJ +150 C Storage Temperature Range Tstg -55 to +150 C 280 2.2 225 1.8 mW mW/C 1 2 CASE 182-06, STYLE 1 TO-92 2-Lead (TO-226AC) 3 1 DEVICE MARKING 2 MMBD101LT1 = 4M CASE 318-08, STYLE 8 SOT-23 (TO-236AB) ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit V(BR)R 7.0 10 -- Volts Diode Capacitance (VR = 0, f = 1.0 MHz, Note 1) CT -- 0.88 1.0 pF Forward Voltage(1) (IF = 10 mAdc) VF -- 0.5 0.6 Volts Reverse Leakage (VR = 3.0 Vdc) IR -- 0.02 0.25 Adc Characteristic Reverse Breakdown Voltage (IR = 10 Adc) Device MMBD101LT1 Package 1 ANODE TO-92 (2-Lead) 3 CATHODE 1 ANODE SOT-23 (Pin 2 Not Connected) ORDERING INFORMATION MBD101 2 CATHODE Shipping TO-92 5000/Bulk SOT-23 3000/Tape & Reel Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 447 Publication Order Number: MBD101/D MBD101 MMBD101LT1 TYPICAL CHARACTERISTICS (TA = 25C unless noted) 0.5 IF, FORWARD CURRENT (mA) 100 VR = 3.0 Vdc 0.2 0.1 0.07 0.05 TA = 85C 10 TA = -40C 1.0 TA = 25C 0.02 0.01 30 40 50 60 70 80 90 100 110 TA, AMBIENT TEMPERATURE (C) 120 0.1 130 0.3 0.4 0.5 0.6 0.7 VF, FORWARD VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 1. Reverse Leakage 1.0 11 10 LOCAL OSCILLATOR FREQUENCY = 1.0 GHz (TEST CIRCUIT IN FIGURE 5) 9.0 0.9 NF, NOISE FIGURE (dB) IR, REVERSE LEAKAGE ( A) 1.0 0.7 0.8 0.7 8.0 7.0 6.0 5.0 4.0 3.0 2.0 0.6 0 1.0 2.0 3.0 1.0 4.0 0.1 0.2 0.5 1.0 2.0 VR, REVERSE VOLTAGE (VOLTS) PLO, LOCAL OSCILLATOR POWER (mW) Figure 3. Capacitance Figure 4. Noise Figure NOTES ON TESTING AND SPECIFICATIONS LOCAL OSCILLATOR UHF NOISE SOURCE H.P. 349A DIODE IN TUNED MOUNT NOISE FIGURE METER H.P. 342A IF AMPLIFIER NF = 1.5 dB f = 30 MHz 5.0 Note 1 -- CC and CT are measured using a capacitance bridge (Boonton Electronics Model 75A or equivalent). Note 2 -- Noise figure measured with diode under test in tuned diode mount using UHF noise source and local oscillator (LO) frequency of 1.0 GHz. The LO power is adjusted for 1.0 mW. IF amplifier NF = 1.5 dB, f = 30 MHz, see Figure 5. Note 3 -- LS is measured on a package having a short instead of a die, using an impedance bridge (Boonton Radio Model 250A RX Meter). Figure 5. Noise Figure Test Circuit http://onsemi.com 448 10 ON Semiconductor MBD110DWT1 MBD330DWT1 MBD770DWT1 Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT-363 package is a solution which simplifies circuit design, reduces device count, and reduces board space by putting two discrete devices in one small six-leaded package. The SOT-363 is ideal for low-power surface mount applications where board space is at a premium, such as portable products. ON Semiconductor Preferred Devices 6 Surface Mount Comparisons: 1 Area (mm2) Max Package PD (mW) Device Count SOT-363 SOT-23 4.6 120 2 7.6 225 1 1 SOT-23 2 SOT-23 SOT-363 40% 70% 4 3 CASE 419B-01, STYLE 6 SOT-363 Space Savings: Package 2 5 Anode 1 N/C 2 Cathode 3 The MBD110DW, MBD330DW, and MBD770DW devices are spin-offs of our popular MMBD101LT1, MMBD301LT1, and MMBD701LT1 SOT-23 devices. They are designed for high-efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. * Extremely Low Minority Carrier Lifetime * Very Low Capacitance * Low Reverse Leakage 6 Cathode 5 N/C 4 Anode MAXIMUM RATINGS Rating Symbol Value Unit VR 7.0 30 70 Vdc Forward Power Dissipation TA = 25C PF 120 mW Junction Temperature TJ -55 to +125 C Storage Temperature Range Tstg -55 to +150 C Reverse Voltage MBD110DWT1 MBD330DWT1 MBD770DWT1 DEVICE MARKING MBD110DWT1 = M4 MBD330DWT1 = T4 MBD770DWT1 = H5 Thermal Clad is a trademark of the Bergquist Company. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev.2 449 Publication Order Number: MBD110DWT1/D MBD110DWT1 MBD330DWT1 MBD770DWT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 A) Symbol Typ Max 7.0 30 70 10 -- -- -- -- -- -- 0.88 1.0 -- -- 0.9 0.5 1.5 1.0 -- -- -- 0.02 13 9.0 0.25 200 200 -- 6.0 -- -- -- -- -- -- 0.5 0.38 0.52 0.42 0.7 0.6 0.45 0.6 0.5 1.0 V(BR)R MBD110DWT1 MBD330DWT1 MBD770DWT1 Diode Capacitance (VR = 0, f = 1.0 MHz, Note 1) MBD110DWT1 Total Capacitance (VR = 15 Volts, f = 1.0 MHz) (VR = 20 Volts, f = 1.0 MHz) MBD330DWT1 MBD770DWT1 Reverse Leakage (VR = 3.0 V) (VR = 25 V) (VR = 35 V) MBD110DWT1 MBD330DWT1 MBD770DWT1 Noise Figure (f = 1.0 GHz, Note 2) MBD110DWT1 Forward Voltage (IF = 10 mA) (IF = 1.0 mAdc) (IF = 10 mA) (IF = 1.0 mAdc) (IF = 10 mA) Min Volts CT pF CT pF IR NF MBD770DWT1 http://onsemi.com 450 A nAdc nAdc dB VF MBD110DWT1 MBD330DWT1 Unit Vdc MBD110DWT1 MBD330DWT1 MBD770DWT1 TYPICAL CHARACTERISTICS MBD110DWT1 100 VR = 3.0 Vdc IF, FORWARD CURRENT (mA) IR, REVERSE LEAKAGE ( A) 1.0 0.7 0.5 0.2 0.1 0.07 0.05 TA = 85C MBD110DWT1 30 40 50 60 70 80 90 100 110 TA, AMBIENT TEMPERATURE (C) 120 TA = 25C MBD110DWT1 0.1 0.3 130 0.4 Figure 1. Reverse Leakage 0.7 0.8 11 LOCAL OSCILLATOR FREQUENCY = 1.0 GHz (Test Circuit Figure 5) 10 NF, NOISE FIGURE (dB) 0.9 0.8 0.7 9 8 7 6 5 4 3 2 MBD110DWT1 0.6 0.5 0.6 VF, FORWARD VOLTAGE (VOLTS) Figure 2. Forward Voltage 1.0 C, CAPACITANCE (pF) TA = -40C 1.0 0.02 0.01 10 0 1.0 2.0 3.0 VR, REVERSE VOLTAGE (VOLTS) 4.0 1 0.1 Figure 3. Capacitance MBD110DWT1 0.2 0.5 1.0 2.0 5.0 PLO, LOCAL OSCILLATOR POWER (mW) 10 Figure 4. Noise Figure LOCAL OSCILLATOR UHF NOISE SOURCE H.P. 349A DIODE IN TUNED MOUNT NOISE FIGURE METER H.P. 342A IF AMPLIFIER NF = 1.5 dB f = 30 MHz NOTES ON TESTING AND SPECIFICATIONS Note 1 - CC and CT are measured using a capacitance bridge (Boonton Electronics Model 75A or equivalent). Note 2 - Noise figure measured with diode under test in tuned diode mount using UHF noise source and local oscillator (LO) frequency of 1.0 GHz. The LO power is adjusted for 1.0 mW. IF amplifier NF = 1.5 dB, f = 30 MHz, see Figure 5. Note 3 - LS is measured on a package having a short instead of a die, using an impedance bridge (Boonton Radio Model 250A RX Meter). Figure 5. Noise Figure Test Circuit http://onsemi.com 451 MBD110DWT1 MBD330DWT1 MBD770DWT1 TYPICAL CHARACTERISTICS MBD330DWT1 MBD330DWT1 2.4 500 , MINORITY CARRIER LIFETIME (ps) CT, TOTAL CAPACITANCE (pF) 2.8 f = 1.0 MHz 2.0 1.6 1.2 0.8 0.4 0 0 3.0 6.0 9.0 12 15 18 21 VR, REVERSE VOLTAGE (VOLTS) 24 27 MBD330DWT1 400 KRAKAUER METHOD 300 200 100 0 30 0 Figure 6. Total Capacitance 100 TA = 100C TA = 75C 0 6.0 12 18 VR, REVERSE VOLTAGE (VOLTS) 40 60 30 50 70 IF, FORWARD CURRENT (mA) 80 90 100 MBD330DWT1 TA = -40C 10 TA = 85C 1.0 TA = 25C 0.01 0.001 IF, FORWARD CURRENT (mA) IR, REVERSE LEAKAGE ( A) MBD330DWT1 0.1 20 Figure 7. Minority Carrier Lifetime 10 1.0 10 24 30 0.1 TA = 25C 0.2 Figure 8. Reverse Leakage 0.4 0.6 0.8 VF, FORWARD VOLTAGE (VOLTS) Figure 9. Forward Voltage http://onsemi.com 452 1.0 1.2 MBD110DWT1 MBD330DWT1 MBD770DWT1 TYPICAL CHARACTERISTICS MBD770DWT1 MBD770DWT1 1.6 500 , MINORITY CARRIER LIFETIME (ps) CT, TOTAL CAPACITANCE (pF) 2.0 f = 1.0 MHz 1.2 0.8 0.4 0 0 5.0 10 15 20 25 30 35 VR, REVERSE VOLTAGE (VOLTS) 40 45 MBD770DWT1 400 KRAKAUER METHOD 300 200 100 0 50 0 10 Figure 10. Total Capacitance 100 MBD770DWT1 TA = 100C 1.0 TA = 75C 0.1 30 50 70 40 60 IF, FORWARD CURRENT (mA) 80 90 100 Figure 11. Minority Carrier Lifetime IF, FORWARD CURRENT (mA) IR, REVERSE LEAKAGE ( A) 10 20 MBD770DWT1 10 TA = 85C TA = -40C 1.0 0.01 0.001 TA = 25C 0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) 40 50 0.1 Figure 12. Reverse Leakage TA = 25C 0.2 0.4 0.8 1.2 VF, FORWARD VOLTAGE (VOLTS) Figure 13. Forward Voltage http://onsemi.com 453 1.6 2.0 ON Semiconductor MBD301 MMBD301LT1 Silicon Hot-Carrier Diodes SCHOTTKY Barrier Diodes ON Semiconductor Preferred Devices These devices are designed primarily for high-efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low-cost, high-volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package. 30 VOLTS SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES * Extremely Low Minority Carrier Lifetime - 15 ps (Typ) * Very Low Capacitance - 1.5 pF (Max) @ VR = 15 V * Low Reverse Leakage - IR = 13 nAdc (Typ) MBD301, MMBD301 1 2 CASE 182-06, STYLE 1 (TO-226AC) MBD301 2 CATHODE MAXIMUM RATINGS (TJ = 125C unless otherwise noted) MBD301 Rating MMBD301LT1 Symbol Value Unit Reverse Voltage VR 30 Volts Forward Power Dissipation @ TA = 25C Derate above 25C PF Operating Junction Temperature Range TJ 280 2.8 200 2.0 1 ANODE 3 mW mW/C 1 C 2 -55 to +125 Storage Temperature Range Tstg CASE 318-08, STYLE 8 SOT-23 (TO-236AB) MMBD301LT1 C -55 to +150 DEVICE MARKING 3 CATHODE MMBD301LT1 = 4T 1 ANODE ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 A) Symbol Min Typ Max Unit V(BR)R 30 -- -- Volts Total Capacitance (VR = 15 V, f = 1.0 MHz) Figure 1 CT -- 0.9 1.5 pF Reverse Leakage (VR = 25 V) Figure 3 IR -- 13 200 nAdc Forward Voltage (IF = 1.0 mAdc) Figure 4 VF -- 0.38 0.45 Vdc Forward Voltage (IF = 10 mAdc) Figure 4 VF -- 0.52 0.6 Vdc Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 454 Publication Order Number: MBD301/D MBD301 MMBD301LT1 TYPICAL ELECTRICAL CHARACTERISTICS 500 f = 1.0 MHz 2.4 , MINORITY CARRIER LIFETIME (ps) C T, TOTAL CAPACITANCE (pF) 2.8 2.0 1.6 1.2 0.8 0.4 0 0 3.0 6.0 18 9.0 12 15 21 VR, REVERSE VOLTAGE (VOLTS) 24 27 400 KRAKAUER METHOD 300 200 100 0 30 0 Figure 1. Total Capacitance 30 40 50 60 70 IF, FORWARD CURRENT (mA) 80 90 100 100 TA = 100C 1.0 IF, FORWARD CURRENT (mA) IR, REVERSE LEAKAGE ( A) 20 Figure 2. Minority Carrier Lifetime 10 75C 0.1 25C 0.01 0.001 10 0 6.0 12 18 VR, REVERSE VOLTAGE (VOLTS) 24 30 10 1.0 0.1 TA = 25C 0.2 Figure 3. Reverse Leakage IF(PEAK) TA = -40C TA = 85C 0.4 0.6 0.8 VF, FORWARD VOLTAGE (VOLTS) 1.0 Figure 4. Forward Voltage CAPACITIVE CONDUCTION IR(PEAK) FORWARD CONDUCTION SINUSOIDAL GENERATOR BALLAST NETWORK (PADS) STORAGE CONDUCTION PADS DUT Figure 5. Krakauer Method of Measuring Lifetime http://onsemi.com 455 SAMPLING OSCILLOSCOPE (50 INPUT) 1.2 ON Semiconductor MBD54DWT1 Dual Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. * Extremely Fast Switching Speed * Low Forward Voltage -- 0.35 V @ IF = 10 mAdc ON Semiconductor Preferred Device 30 VOLTS DUAL HOT-CARRIER DETECTOR AND SWITCHING DIODES 6 MAXIMUM RATINGS (TJ = 125C unless otherwise noted) Rating Symbol Value Unit Reverse Voltage VR 30 Volts Forward Power Dissipation @ TA = 25C Derate above 25C PF 150 1.2 mW mW/C Forward Current (DC) IF 200 Max mA Junction Temperature TJ 125 Max C Storage Temperature Range Tstg -55 to +150 C 1 2 5 4 3 CASE 419B-01, STYLE 6 SOT-363 Anode 1 6 Cathode N/C 2 DEVICE MARKING 5 N/C Cathode 3 MBD54DWT1 = BL 4 Anode ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (EACH DIODE) Symbol Min Typ Max Unit V(BR)R 30 -- -- Volts Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT -- 7.6 10 pF Reverse Leakage (VR = 25 V) IR -- 0.5 2.0 Adc Forward Voltage (IF = 0.1 mAdc) VF -- 0.22 0.24 Vdc Forward Voltage (IF = 30 mAdc) VF -- 0.41 0.5 Vdc Forward Voltage (IF = 100 mAdc) VF -- 0.52 1.0 Vdc Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1 trr -- -- 5.0 ns Forward Voltage (IF = 1.0 mAdc) VF -- 0.29 0.32 Vdc Forward Voltage (IF = 10 mAdc) VF -- 0.35 0.40 Vdc Forward Current (DC) IF -- -- 200 mAdc Repetitive Peak Forward Current IFRM -- -- 300 mAdc Non-Repetitive Peak Forward Current (t < 1.0 s) IFSM -- -- 600 mAdc Characteristic Reverse Breakdown Voltage (IR = 10 A) Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 4 456 Publication Order Number: MBD54DWT1/D MBD54DWT1 820 +10 V 2k 0.1 F IF 100 H tr tp IF t trr 10% 0.1 F DUT 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE 90% IR VR INPUT SIGNAL t iR(REC) = 1 mA OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr Figure 1. Recovery Time Equivalent Test Circuit 1000 1.0 125C 85C 0.1 0.0 0.1 25C 0.2 -40C 0.4 TA = 125C 10 1.0 TA = 85C 0.1 0.01 -55C 0.3 TA = 150C 100 IR , REVERSE CURRENT (A) 150C 10 0.5 0.001 0.6 TA = 25C 0 5 VF, FORWARD VOLTAGE (VOLTS) Figure 2. Forward Voltage 10 15 20 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Leakage Current 14 C T , TOTAL CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 100 12 10 8 6 4 2 0 0 5 10 15 20 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Total Capacitance http://onsemi.com 457 25 30 25 30 ON Semiconductor MBD701 MMBD701LT1 Silicon Hot-Carrier Diodes Schottky Barrier Diodes ON Semiconductor Preferred Devices These devices are designed primarily for high-efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low-cost, high-volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package. * Extremely Low Minority Carrier Lifetime - 15 ps (Typ) * Very Low Capacitance - 1.0 pF @ VR = 20 V * High Reverse Voltage - to 70 Volts * Low Reverse Leakage - 200 nA (Max) 70 VOLTS HIGH-VOLTAGE SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES 1 2 CASE 182-06, STYLE 1 (TO-226AC) MAXIMUM RATINGS (TJ = 125C unless otherwise noted) MBD701 Rating MMBD701LT1 Symbol Value Unit Reverse Voltage VR 70 Volts Forward Power Dissipation @ TA = 25C Derate above 25C PF Operating Junction Temperature Range TJ 280 2.8 200 2.0 2 CATHODE mW mW/C 3 C 1 -55 to +125 Storage Temperature Range Tstg 1 ANODE 2 C -55 to +150 CASE 318-08, STYLE 8 SOT-23 (TO-236AB) DEVICE MARKING MMBD701LT1 = 5H 3 CATHODE 1 ANODE ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)R 70 -- -- Volts CT -- 0.5 1.0 pF Reverse Leakage (VR = 35 V) Figure 3 IR -- 9.0 200 nAdc Forward Voltage (IF = 1.0 mAdc) Figure 4 VF -- 0.42 0.5 Vdc Forward Voltage (IF = 10 mAdc) Figure 4 VF -- 0.7 1.0 Vdc Reverse Breakdown Voltage (IR = 10 Adc) Total Capacitance (VR = 20 V, f = 1.0 MHz) Figure 1 Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 458 Publication Order Number: MBD701/D MBD701 MMBD701LT1 TYPICAL ELECTRICAL CHARACTERISTICS 500 f = 1.0 MHz , MINORITY CARRIER LIFETIME (ps) C T, TOTAL CAPACITANCE (pF) 2.0 1.6 1.2 0.8 0.4 0 0 5.0 10 15 20 25 30 35 VR, REVERSE VOLTAGE (VOLTS) 40 45 400 KRAKAUER METHOD 300 200 100 0 50 0 10 Figure 1. Total Capacitance 80 90 100 100 TA = 100C 1.0 IF, FORWARD CURRENT (mA) IR, REVERSE LEAKAGE ( A) 30 40 50 60 70 IF, FORWARD CURRENT (mA) Figure 2. Minority Carrier Lifetime 10 TA = 75C 0.1 0.01 0.001 20 TA = 25C 0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) 40 10 1.0 0.1 50 TA = 25C 0 Figure 3. Reverse Leakage IF(PEAK) TA = -40C TA = 85C 0.2 0.4 0.8 1.2 VF, FORWARD VOLTAGE (VOLTS) 1.6 Figure 4. Forward Voltage CAPACITIVE CONDUCTION IR(PEAK) FORWARD CONDUCTION SINUSOIDAL GENERATOR BALLAST NETWORK (PADS) STORAGE CONDUCTION PADS DUT Figure 5. Krakauer Method of Measuring Lifetime http://onsemi.com 459 SAMPLING OSCILLOSCOPE (50 INPUT) 2.0 MBT35200MT1 High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications http://onsemi.com 35 VOLTS 2.0 AMPS PNP TRANSISTOR MAXIMUM RATINGS (TA = 25C) Rating Symbol Max Unit Collector-Emitter Voltage VCEO -35 Vdc Collector-Base Voltage VCBO -55 Vdc Emitter-Base Voltage VEBO -5.0 Vdc IC -2.0 Adc Collector Current - Peak ICM -5.0 A Electrostatic Discharge ESD Collector Current - Continuous COLLECTOR 1, 2, 5, 6 3 BASE HBM Class 3 MM Class C 4 EMITTER THERMAL CHARACTERISTICS Characteristic Symbol Max Unit PD (Note 1.) 625 mW 5.0 mW/C RJA (Note 1.) 200 C/W PD (Note 2.) 1.0 W 8.0 mW/C Thermal Resistance, Junction to Ambient RJA (Note 2.) 120 C/W Thermal Resistance, Junction to Lead #1 RJL 80 C/W PDsingle (Notes 2. & 3.) 1.75 W TJ, Tstg -55 to +150 C Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation TA = 25C Derate above 25C Total Device Dissipation (Single Pulse < 10 sec.) 3 4 5 2 1 6 CASE 318G TSOP STYLE 6 DEVICE MARKING Junction and Storage Temperature Range G4 (date code) 1. FR-4 @ Minimum Pad 2. FR-4 @ 1.0 X 1.0 inch Pad 3. ref: Figure 9 ORDERING INFORMATION Semiconductor Components Industries, LLC, 2001 August, 2000 - Rev. 1 460 Device Package Shipping MBT35200MT1 Case 318G 3000/Tape & Reel Publication Order Number: MBT35200MT1/D MBT35200MT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typical Max -35 -45 - -55 -65 - -5.0 -7.0 - - -0.03 -0.1 - -0.03 -0.1 - -0.01 -0.1 100 100 100 200 200 200 - 400 - - - - -0.125 -0.175 -0.260 -0.15 -0.20 -0.31 - -0.68 -0.85 - -0.81 -0.875 100 - - Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = -10 mAdc, IB = 0) V(BR)CEO Collector-Base Breakdown Voltage (IC = -0.1 mAdc, IE = 0) V(BR)CBO Emitter-Base Breakdown Voltage (IE = -0.1 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = -35 Vdc, IE = 0) ICBO Collector-Emitter Cutoff Current (VCES = -35 Vdc) ICES Emitter Cutoff Current (VEB = -4.0 Vdc) IEBO Vdc Vdc Vdc Adc Adc Adc ON CHARACTERISTICS DC Current Gain (1) (IC = -1.0 A, VCE = -1.5 V) (IC = -1.5 A, VCE = -1.5 V) (IC = -2.0 A, VCE = -3.0 V) hFE Collector-Emitter Saturation Voltage (Note 4.) (IC = -0.8 A, IB = -0.008 A) (IC = -1.2 A, IB = -0.012 A) (IC = -2.0 A, IB = -0.02 A) VCE(sat) Base-Emitter Saturation Voltage (Note 4.) (IC = -1.2 A, IB = -0.012 A) VBE(sat) Base-Emitter Turn-on Voltage (Note 4.) (IC = -2.0 A, VCE = -3.0 V) VBE(on) Cutoff Frequency (IC = -100 mA, VCE = -5.0 V, f = 100 MHz) V V V fT MHz Input Capacitance (VEB = -0.5 V, f = 1.0 MHz) Cibo - 600 650 pF Output Capacitance (VCB = -3.0 V, f = 1.0 MHz) Cobo - 85 100 pF Turn-on Time (VCC = -10 V, IB1 = -100 mA, IC = -1 A, RL = 3 ) ton - 35 - nS Turn-off Time (VCC = -10 V, IB1 = IB2 = -100 mA, IC = 1 A, RL = 3 ) toff - 225 - nS 4. Pulsed Condition: Pulse Width = 300 sec, Duty Cycle 2% http://onsemi.com 461 10 0.01 1.6 1.4 1.2 1.0 0.001 0.01 0.1 0.20 100C 0.15 25C 0.10 0.05 0 0.001 0.01 0.1 1.0 Figure 1. Collector Emitter Saturation Voltage versus Collector Current Figure 2. Collector Emitter Saturation Voltage versus Collector Current 1.0 100C 25C -55C 0.2 0.001 0.01 0.1 25C 0.6 100C 0.4 0.2 0 1.0 -55C 0.8 0.001 0.01 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 3. DC Current Gain versus Collector Current Figure 4. Base Emitter Saturation Voltage versus Collector Current 1.1 750 1.0 700 0.9 100C 0.8 25C 0.7 0.6 -55C 0.5 0.4 0.3 -55C IC, COLLECTOR CURRENT (AMPS) 0.4 0 IC/IB = 50 IC, COLLECTOR CURRENT (AMPS) 0.8 0.6 0.25 1.0 C ibo , INPUT CAPACITANCE (pF) hFE , DC CURRENT GAIN (NORMALIZED) IC/IB = 100 50 0.001 V BE(on) , BASE EMITTER TURN-ON VOLTAGE (VOLTS) VCE(sat) , COLLECTOR EMITTER SATURATION VOLTAGE (VOLTS) 0.1 VBE(sat) , BASE EMITTER SATURATION VOLTAGE (VOLTS) VCE(sat) , COLLECTOR EMITTER SATURATION VOLTAGE (VOLTS) MBT35200MT1 650 600 550 500 450 400 350 0.001 0.01 0.1 300 1.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 IC, COLLECTOR CURRENT (AMPS) VEB, EMITTER BASE VOLTAGE (VOLTS) Figure 5. Base Emitter Turn-On Voltage versus Collector Current Figure 6. Input Capacitance http://onsemi.com 462 4.5 5.0 MBT35200MT1 10 200 IC , COLLECTOR CURRENT (AMPS) Cobo, OUTPUT CAPACITANCE (pF) 225 175 150 125 100 75 50 1 s 100 ms 10 ms r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE 1.0 0 5.0 100 s 1.0 DC 0.1 25 0 1 ms 0.01 SINGLE PULSE AT Tamb = 25C VCB, COLLECTOR BASE VOLTAGE (VOLTS) 1.0 10 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. Output Capacitance Figure 8. Safe Operating Area 10 15 20 25 30 35 0.1 100 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 SINGLE PULSE 0.00001 0.0001 0.001 0.01 0.1 t, TIME (sec) 1.0 Figure 9. Normalized Thermal Response http://onsemi.com 463 10 100 1000 MBT3904DW1T1 Dual General Purpose Transistor The MBT3904DW1T1 device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount applications where board space is at a premium. * hFE, 100-300 * Low VCE(sat), 0.4 V * Simplifies Circuit Design * Reduces Board Space * Reduces Component Count * Available in 8 mm, 7-inch/3,000 Unit Tape and Reel * Device Marking: MBT3904DW1T1 = MA MAXIMUM RATINGS Rating Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 6.0 Vdc IC 200 mAdc ESD HBM>16000, MM>2000 V Symbol Max Unit PD 150 mW RJA 833 C/W TJ, Tstg -55 to +150 C Electrostatic Discharge 6 5 1 2 4 3 SOT-363/SC-88 CASE 419B STYLE 1 (3) (2) (1) Q1 Symbol Collector Current - Continuous http://onsemi.com Q2 (4) (5) (6) MBT3904DW1T1 ORDERING INFORMATION Device Package Shipping MBT3904DW1T1 SOT-363 3000 Units/Reel THERMAL CHARACTERISTICS Characteristic Total Package Dissipation(1) TA = 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature Range 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum 1. recommended footprint. Semiconductor Components Industries, LLC, 2001 October, 2001 - Rev. 2 464 Publication Order Number: MBT3904DW1T1/D MBT3904DW1T1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max 40 - 60 - 6.0 - - 50 - 50 40 70 100 60 30 - - 300 - - - - 0.2 0.3 0.65 - 0.85 0.95 300 - - 4.0 - 8.0 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(2) (IC = 1.0 mAdc, IB = 0) V(BR)CEO Collector-Base Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) IBL Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) ICEX Vdc Vdc Vdc nAdc nAdc ON CHARACTERISTICS (2) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) hFE Collector-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VCE(sat) Base-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VBE(sat) - Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) fT Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo 2. Pulse Test: Pulse Width 300 s; Duty Cycle 2.0%. http://onsemi.com 465 MHz pF pF MBT3904DW1T1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hie Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hre Small-Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hfe Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hoe Noise Figure (VCE = 5.0 Vdc, IC = 100 Adc, RS = 1.0 k , f = 1.0 kHz) NF Min Max 1.0 2.0 10 12 0.5 0.1 8.0 10 100 100 400 400 1.0 3.0 40 60 - - 5.0 4.0 Unit k X 10-4 - mhos dB SWITCHING CHARACTERISTICS Delay Time (VCC = 3.0 Vdc, VBE = -0.5 Vdc) td - 35 Rise Time (IC = 10 mAdc, IB1 = 1.0 mAdc) tr - 35 Storage Time (VCC = 3.0 Vdc, IC = 10 mAdc) ts - 200 Fall Time (IB1 = IB2 = 1.0 mAdc) tf - 50 DUTY CYCLE = 2% 300 ns +3 V +10.9 V 275 DUTY CYCLE = 2% 10 k -0.5 V t1 10 < t1 < 500 s +3 V 275 10 k Cs < 4 pF* 1N916 -9.1 V < 1 ns * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit http://onsemi.com 466 ns +10.9 V 0 < 1 ns ns Cs < 4 pF* MBT3904DW1T1 TYPICAL TRANSIENT CHARACTERISTICS TJ = 25C TJ = 125C 10 5000 Q, CHARGE (pC) Cibo 3.0 Cobo 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 5.0 7.0 10 20 30 50 70 100 50 40 V 15 V 10 2.0 3.0 5.0 7.0 10 20 30 50 70 100 50 30 20 7 5 200 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) Figure 5. Turn-On Time Figure 6. Rise Time IC/IB = 10 IC/IB = 10 30 20 10 7 5 30 50 70 100 200 IC/IB = 10 30 20 7 5 20 IC/IB = 20 100 70 50 10 5.0 7.0 10 VCC = 40 V IB1 = IB2 300 200 IC/IB = 20 50 200 500 ts = ts - 1/8 tf IB1 = IB2 100 70 2.0 3.0 1.0 IC, COLLECTOR CURRENT (mA) 500 IC/IB = 20 100 70 10 2.0 V td @ VOB = 0 V VCC = 40 V IC/IB = 10 300 200 tr @ VCC = 3.0 V 30 20 200 500 t r, RISE TIME (ns) TIME (ns) 2.0 3.0 Figure 4. Charge Data IC/IB = 10 1.0 1.0 Figure 3. Capacitance 100 70 300 200 QA IC, COLLECTOR CURRENT (mA) 300 200 t s , STORAGE TIME (ns) 20 30 40 QT 300 200 REVERSE BIAS VOLTAGE (VOLTS) 500 1.0 1000 700 500 100 70 50 t f , FALL TIME (ns) CAPACITANCE (pF) 2000 5.0 7 5 VCC = 40 V IC/IB = 10 3000 7.0 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. Storage Time Figure 8. Fall Time http://onsemi.com 467 200 MBT3904DW1T1 TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = 5.0 Vdc, TA = 25C, Bandwidth = 1.0 Hz) 12 SOURCE RESISTANCE = 200 IC = 0.5 mA 8 6 SOURCE RESISTANCE = 1.0 k IC = 50 A 4 2 0 0.1 SOURCE RESISTANCE = 500 IC = 100 A 0.2 0.4 1.0 2.0 f = 1.0 kHz 12 NF, NOISE FIGURE (dB) 10 NF, NOISE FIGURE (dB) 14 SOURCE RESISTANCE = 200 IC = 1.0 mA IC = 1.0 mA IC = 0.5 mA 10 IC = 50 A 8 IC = 100 A 6 4 2 4.0 10 20 40 0 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k OHMS) Figure 9. Noise Figure Figure 10. Noise Figure 40 100 5.0 10 5.0 10 h PARAMETERS (VCE = 10 Vdc, f = 1.0 kHz, TA = 25C) 100 hoe, OUTPUT ADMITTANCE ( mhos) h fe , CURRENT GAIN 300 200 100 70 50 30 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 50 20 10 5 2 1 10 0.1 0.2 Figure 11. Current Gain h ie , INPUT IMPEDANCE (k OHMS) 10 5.0 2.0 1.0 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 hre , VOLTAGE FEEDBACK RATIO (x 10 -4) Figure 12. Output Admittance 20 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.1 Figure 13. Input Impedance 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) Figure 14. Voltage Feedback Ratio http://onsemi.com 468 MBT3904DW1T1 h FE, DC CURRENT GAIN (NORMALIZED) TYPICAL STATIC CHARACTERISTICS 2.0 TJ = +125C VCE = 1.0 V +25C 1.0 0.7 -55C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 70 50 100 200 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 15. DC Current Gain 1.0 TJ = 25C 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) Figure 16. Collector Saturation Region 1.2 1.0 TJ = 25C VBE(sat) @ IC/IB =10 0.8 VBE @ VCE =1.0 V 0.6 0.4 VCE(sat) @ IC/IB =10 VC FOR VCE(sat) 0 -55C TO +25C -0.5 -55C TO +25C -1.0 +25C TO +125C VB FOR VBE(sat) -1.5 0.2 0 +25C TO +125C 0.5 COEFFICIENT (mV/ C) V, VOLTAGE (VOLTS) 1.0 1.0 2.0 5.0 10 20 50 100 -2.0 200 0 20 40 60 80 100 120 140 160 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 17. "ON" Voltages Figure 18. Temperature Coefficients http://onsemi.com 469 180 200 MBT3906DW1T1 Dual General Purpose Transistor The MBT3906DW1T1 device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount applications where board space is at a premium. * * * * * * * hFE, 100-300 Low VCE(sat), 0.4 V Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7-inch/3,000 Unit Tape and Reel Device Marking: MBT3906DW1T1 = A2 http://onsemi.com 6 5 1 2 4 3 SOT-363/SC-88 CASE 419B STYLE 1 (3) (2) (1) Q1 Q2 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO -40 Vdc Collector-Base Voltage VCBO -40 Vdc Emitter-Base Voltage VEBO -5.0 Vdc IC -200 mAdc ESD HBM>16000, MM>2000 V Symbol Max Unit PD 150 mW RJA 833 C/W TJ, Tstg -55 to +150 C Collector Current - Continuous Electrostatic Discharge (4) (5) (6) MBT3906DW1T1 ORDERING INFORMATION Device Package Shipping MBT3906DW1T1 SOT-363 3000 Units/Reel THERMAL CHARACTERISTICS Characteristic Total Package TA = 25C Dissipation(1) Thermal Resistance Junction to Ambient Junction and Storage Temperature Range 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum 1. recommended footprint. Semiconductor Components Industries, LLC, 2001 October, 2001 - Rev. 0 470 Publication Order Number: MBT3906DW1T1/D MBT3906DW1T1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage(2) V(BR)CEO -40 - Vdc Collector-Base Breakdown Voltage V(BR)CBO -40 - Vdc Emitter-Base Breakdown Voltage V(BR)EBO -5.0 - Vdc IBL - -50 nAdc ICEX - -50 nAdc 60 80 100 60 30 - - 300 - - - - -0.25 -0.4 -0.65 - -0.85 -0.95 OFF CHARACTERISTICS Base Cutoff Current Collector Cutoff Current ON CHARACTERISTICS (2) DC Current Gain (IC = -0.1 mAdc, VCE = -1.0 Vdc) (IC = -1.0 mAdc, VCE = -1.0 Vdc) (IC = -10 mAdc, VCE = -1.0 Vdc) (IC = -50 mAdc, VCE = -1.0 Vdc) (IC = -100 mAdc, VCE = -1.0 Vdc) hFE Collector-Emitter Saturation Voltage (IC = -10 mAdc, IB = -1.0 mAdc) (IC = -50 mAdc, IB = -5.0 mAdc) VCE(sat) Base-Emitter Saturation Voltage (IC = -10 mAdc, IB = -1.0 mAdc) (IC = -50 mAdc, IB = -5.0 mAdc) VBE(sat) - Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product fT 250 - MHz Output Capacitance Cobo - 4.5 pF Input Capacitance Cibo - 10.0 pF Symbol Min Max Unit Input Impedance (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) hie 2.0 12 k Voltage Feedback Ratio (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) hre 0.1 10 X 10-4 Small-Signal Current Gain (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) hfe 100 400 - Output Admittance (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) hoe 3.0 60 mhos Noise Figure (VCE = -5.0 Vdc, IC = -100 Adc, RS = 1.0 k , f = 1.0 kHz) NF - 4.0 dB 2. Pulse Test: Pulse Width 300 s; Duty Cycle 2.0%. ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic SWITCHING CHARACTERISTICS Delay Time (VCC = -3.0 Vdc, VBE = 0.5 Vdc) td - 35 Rise Time (IC = -10 mAdc, IB1 = -1.0 mAdc) tr - 35 Storage Time (VCC = -3.0 Vdc, IC = -10 mAdc) ts - 225 Fall Time (IB1 = IB2 = -1.0 mAdc) tf - 75 http://onsemi.com 471 ns ns MBT3906DW1T1 3V 275 < 1 ns 275 10 k +0.5 V 10 k 0 Cs < 4 pF* 10.6 V 3V < 1 ns +9.1 V 300 ns DUTY CYCLE = 2% Cs < 4 pF* 1N916 10 < t1 < 500 s DUTY CYCLE = 2% 10.9 V t1 * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS 10 5000 7.0 3000 2000 Cobo 5.0 Q, CHARGE (pC) CAPACITANCE (pF) TJ = 25C TJ = 125C Cibo 3.0 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE BIAS (VOLTS) 1000 700 500 300 200 100 70 50 20 30 40 VCC = 40 V IC/IB = 10 QT 1.0 2.0 3.0 Figure 3. Capacitance t f , FALL TIME (ns) TIME (ns) 15 V 30 20 40 V 5.0 7.0 10 20 30 50 70 100 IC/IB = 20 100 70 50 30 20 IC/IB = 10 10 2.0 V 7 5 td @ VOB = 0 V 2.0 3.0 VCC = 40 V IB1 = IB2 300 200 tr @ VCC = 3.0 V 1.0 200 500 IC/IB = 10 300 200 10 7 5 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) Figure 4. Charge Data 500 100 70 50 QA 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Turn-On Time Figure 6. Fall Time http://onsemi.com 472 200 MBT3906DW1T1 TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = -5.0 Vdc, TA = 25C, Bandwidth = 1.0 Hz) 12 SOURCE RESISTANCE = 200 IC = 1.0 mA 4.0 f = 1.0 kHz SOURCE RESISTANCE = 200 IC = 0.5 mA 3.0 SOURCE RESISTANCE = 2.0 k IC = 50 A 2.0 SOURCE RESISTANCE = 2.0 k IC = 100 A 1.0 0 0.1 0.2 0.4 IC = 1.0 mA 10 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 5.0 1.0 2.0 4.0 10 f, FREQUENCY (kHz) 20 40 8 6 4 IC = 50 A 2 IC = 100 A 0 100 IC = 0.5 mA 0.1 0.2 40 0.4 1.0 2.0 4.0 10 20 Rg, SOURCE RESISTANCE (k OHMS) Figure 7. 100 Figure 8. h PARAMETERS (VCE = -10 Vdc, f = 1.0 kHz, TA = 25C) 100 hoe, OUTPUT ADMITTANCE ( mhos) h fe , DC CURRENT GAIN 300 200 100 70 50 70 50 30 20 10 7 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5 5.0 7.0 10 0.1 0.2 h ie , INPUT IMPEDANCE (k OHMS) 20 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 Figure 10. Output Admittance 5.0 7.0 10 hre , VOLTAGE FEEDBACK RATIO (x 10 -4) Figure 9. Current Gain 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.1 Figure 11. Input Impedance 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 Figure 12. Voltage Feedback Ratio http://onsemi.com 473 MBT3906DW1T1 h FE, DC CURRENT GAIN (NORMALIZED) TYPICAL STATIC CHARACTERISTICS 2.0 TJ = +125C VCE = 1.0 V +25C 1.0 0.7 -55C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 20 30 50 70 100 200 VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 13. DC Current Gain 1.0 TJ = 25C 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 IB, BASE CURRENT (mA) 0.7 1.0 2.0 3.0 5.0 7.0 10 1.0 TJ = 25C V, VOLTAGE (VOLTS) 0.8 V , TEMPERATURE COEFFICIENTS (mV/ C) Figure 14. Collector Saturation Region VBE(sat) @ IC/IB = 10 VBE @ VCE = 1.0 V 0.6 0.4 VCE(sat) @ IC/IB = 10 0.2 0 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 1.0 0.5 VC FOR VCE(sat) 0 +25C TO +125C -55C TO +25C -0.5 +25C TO +125C -1.0 -55C TO +25C VB FOR VBE(sat) -1.5 -2.0 0 Figure 15. "ON" Voltages 20 40 60 80 100 120 140 IC, COLLECTOR CURRENT (mA) 160 Figure 16. Temperature Coefficients http://onsemi.com 474 180 200 MBT3946DW1T1 Dual General Purpose Transistor The MBT3946DW1T1 device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount applications where board space is at a premium. * * * * * * * hFE, 100-300 Low VCE(sat), 0.4 V Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7-inch/3,000 Unit Tape and Reel Device Marking: MBT3946DW1T1 = 46 http://onsemi.com 6 5 1 2 4 3 SOT-363/SC-88 CASE 419B STYLE 1 (3) (2) (1) Q1 Q2 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage (NPN) (PNP) VCEO Collector-Base Voltage (NPN) (PNP) VCBO Emitter-Base Voltage (NPN) (PNP) VEBO Collector Current - Continuous (NPN) (PNP) Electrostatic Discharge Value Unit Vdc (4) (5) (6) MBT3946DW1T1* 40 -40 Vdc *Q1 NPN Q2 PNP Vdc ORDERING INFORMATION 60 -40 6.0 -5.0 IC mAdc Device Package Shipping MBT3946DW1T1 SOT-363 3000 Units/Reel 200 -200 ESD HBM>16000, MM>2000 V Symbol Max Unit PD 150 mW RJA 833 C/W TJ, Tstg -55 to +150 C THERMAL CHARACTERISTICS Characteristic Total Package TA = 25C Dissipation(1) Thermal Resistance Junction to Ambient Junction and Storage Temperature Range 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum 1. recommended footprint. Semiconductor Components Industries, LLC, 2001 October, 2001 - Rev. 0 475 Publication Order Number: MBT3946DW1T1/D MBT3946DW1T1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max 40 -40 - - 60 -40 - - 6.0 -5.0 - - - - 50 -50 - - 50 -50 (NPN) 40 70 100 60 30 - - 300 - - (PNP) 60 80 100 60 30 - - 300 - - (NPN) - - 0.2 0.3 (PNP) - - -0.25 -0.4 (NPN) 0.65 - 0.85 0.95 (PNP) -0.65 - -0.85 -0.95 300 250 - - - - 4.0 4.5 - - 8.0 10.0 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(2) (IC = 1.0 mAdc, IB = 0) (IC = -1.0 mAdc, IB = 0) (NPN) (PNP) Collector-Base Breakdown Voltage (IC = 10 Adc, IE = 0) (IC = -10 Adc, IE = 0) (NPN) (PNP) Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) (IE = -10 Adc, IC = 0) (NPN) (PNP) Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) (VCE = -30 Vdc, VEB = -3.0 Vdc) (NPN) (PNP) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) (VCE = -30 Vdc, VEB = -3.0 Vdc) (NPN) (PNP) V(BR)CEO Vdc V(BR)CBO Vdc V(BR)EBO Vdc IBL nAdc ICEX nAdc ON CHARACTERISTICS (2) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = -0.1 mAdc, VCE = -1.0 Vdc) (IC = -1.0 mAdc, VCE = -1.0 Vdc) (IC = -10 mAdc, VCE = -1.0 Vdc) (IC = -50 mAdc, VCE = -1.0 Vdc) (IC = -100 mAdc, VCE = -1.0 Vdc) Collector-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) (IC = -10 mAdc, IB = -1.0 mAdc) (IC = -50 mAdc, IB = -5.0 mAdc) Base-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) (IC = -10 mAdc, IB = -1.0 mAdc) (IC = -50 mAdc, IB = -5.0 mAdc) hFE - VCE(sat) Vdc VBE(sat) Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) (IC = -10 mAdc, VCE = -20 Vdc, f = 100 MHz) (NPN) (PNP) fT Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) (VCB = -5.0 Vdc, IE = 0, f = 1.0 MHz) (NPN) (PNP) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) (VEB = -0.5 Vdc, IC = 0, f = 1.0 MHz) (NPN) (PNP) MHz Cobo pF Cibo 2. Pulse Test: Pulse Width 300 s; Duty Cycle 2.0%. http://onsemi.com 476 pF MBT3946DW1T1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) (NPN) (PNP) Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) (NPN) (PNP) Small-Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) (NPN) (PNP) Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) (NPN) (PNP) Noise Figure (VCE = 5.0 Vdc, IC = 100 Adc, RS = 1.0 k , f = 1.0 kHz) (VCE = -5.0 Vdc, IC = -100 Adc, RS = 1.0 k , f = 1.0 kHz) (NPN) (PNP) Min Max 1.0 2.0 10 12 0.5 0.1 8.0 10 100 100 400 400 1.0 3.0 40 60 - - 5.0 4.0 Unit k hie X 10-4 hre hfe - mhos hoe NF dB SWITCHING CHARACTERISTICS Delay Time (VCC = 3.0 Vdc, VBE = -0.5 Vdc) (VCC = -3.0 Vdc, VBE = 0.5 Vdc) (NPN) (PNP) td - - 35 35 Rise Time (IC = 10 mAdc, IB1 = 1.0 mAdc) (IC = -10 mAdc, IB1 = -1.0 mAdc) (NPN) (PNP) tr - - 35 35 Storage Time (VCC = 3.0 Vdc, IC = 10 mAdc) (VCC = -3.0 Vdc, IC = -10 mAdc) (NPN) (PNP) ts - - 200 225 Fall Time (IB1 = IB2 = 1.0 mAdc) (IB1 = IB2 = -1.0 mAdc) (NPN) (PNP) tf - - 50 75 http://onsemi.com 477 ns ns MBT3946DW1T1 (NPN) DUTY CYCLE = 2% 300 ns +3 V +10.9 V 275 +10.9 V DUTY CYCLE = 2% 10 k -0.5 V +3 V t1 10 < t1 < 500 s 275 10 k 0 Cs < 4 pF* < 1 ns Cs < 4 pF* 1N916 -9.1 V < 1 ns * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS TJ = 25C TJ = 125C 10 5000 (NPN) 2000 5.0 Cibo 3.0 Cobo 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 1000 700 500 QT 300 200 100 70 50 20 30 40 (NPN) VCC = 40 V IC/IB = 10 3000 Q, CHARGE (pC) CAPACITANCE (pF) 7.0 QA 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 REVERSE BIAS VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 3. Capacitance Figure 4. Charge Data http://onsemi.com 478 200 MBT3946DW1T1 (NPN) 500 t r, RISE TIME (ns) 100 70 tr @ VCC = 3.0 V 50 30 20 40 V 15 V 10 7 5 (NPN) 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC/IB = 20 7 5 200 1.0 5.0 7.0 10 20 30 50 70 100 VCC = 40 V IB1 = IB2 300 200 IC/IB = 10 30 20 IC/IB = 20 100 70 50 IC/IB = 10 30 20 10 (NPN) 5.0 7.0 10 20 30 50 70 100 200 500 ts = ts - 1/8 tf IB1 = IB2 IC/IB = 10 2.0 3.0 2.0 3.0 Figure 6. Rise Time IC/IB = 20 1.0 (NPN) Figure 5. Turn-On Time 50 7 5 30 20 IC, COLLECTOR CURRENT (mA) 100 70 10 50 IC, COLLECTOR CURRENT (mA) 500 300 200 100 70 10 2.0 V td @ VOB = 0 V VCC = 40 V IC/IB = 10 300 200 t f , FALL TIME (ns) TIME (ns) 300 200 t s , STORAGE TIME (ns) 500 IC/IB = 10 7 5 200 (NPN) 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. Storage Time Figure 8. Fall Time 200 TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = 5.0 Vdc, TA = 25C, Bandwidth = 1.0 Hz) 12 SOURCE RESISTANCE = 200 IC = 0.5 mA 8 6 SOURCE RESISTANCE = 1.0 k IC = 50 A 4 0 0.1 SOURCE RESISTANCE = 500 IC = 100 A 0.2 0.4 1.0 2.0 10 IC = 1.0 mA IC = 0.5 mA 10 IC = 50 A 8 IC = 100 A 6 4 2 (NPN) 4.0 f = 1.0 kHz 12 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 10 2 14 SOURCE RESISTANCE = 200 IC = 1.0 mA 20 40 0 100 (NPN ) 0.1 0.2 0.4 1.0 2.0 4.0 10 20 f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k OHMS) Figure 9. Noise Figure Figure 10. Noise Figure http://onsemi.com 479 40 100 MBT3946DW1T1 (NPN) h PARAMETERS (VCE = 10 Vdc, f = 1.0 kHz, TA = 25C) 100 hoe, OUTPUT ADMITTANCE ( mhos) 300 h fe , CURRENT GAIN (NPN) 200 100 70 50 30 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 20 10 5 2 1 10 (NPN) 50 0.1 0.2 (NPN) 5.0 2.0 1.0 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 hre , VOLTAGE FEEDBACK RATIO (x 10 -4) h ie , INPUT IMPEDANCE (k OHMS) 20 0.2 5.0 10 5.0 10 Figure 12. Output Admittance Figure 11. Current Gain 10 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 10 7.0 (NPN) 5.0 3.0 2.0 1.0 0.7 0.5 0.1 Figure 13. Input Impedance 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) Figure 14. Voltage Feedback Ratio http://onsemi.com 480 MBT3946DW1T1 (NPN) h FE, DC CURRENT GAIN (NORMALIZED) TYPICAL STATIC CHARACTERISTICS 2.0 TJ = +125C VCE = 1.0 V (NPN) +25C 1.0 0.7 -55C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 70 50 100 200 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 15. DC Current Gain 1.0 TJ = 25C (NPN) 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) Figure 16. Collector Saturation Region 1.2 TJ = 25C 1.0 (NPN) (NPN) VBE(sat) @ IC/IB =10 0.8 VBE @ VCE =1.0 V 0.6 0.4 VCE(sat) @ IC/IB =10 VC FOR VCE(sat) 0 -55C TO +25C -0.5 -55C TO +25C -1.0 +25C TO +125C VB FOR VBE(sat) -1.5 0.2 0 +25C TO +125C 0.5 COEFFICIENT (mV/ C) V, VOLTAGE (VOLTS) 1.0 1.0 2.0 5.0 10 20 50 100 -2.0 200 0 20 40 60 80 100 120 140 160 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 17. "ON" Voltages Figure 18. Temperature Coefficients http://onsemi.com 481 180 200 MBT3946DW1T1 (PNP) 3V 275 < 1 ns 275 10 k +0.5 V 10 k 0 Cs < 4 pF* 10.6 V 3V < 1 ns +9.1 V 300 ns DUTY CYCLE = 2% Cs < 4 pF* 1N916 10 < t1 < 500 s DUTY CYCLE = 2% 10.9 V t1 * Total shunt capacitance of test jig and connectors Figure 19. Delay and Rise Time Equivalent Test Circuit Figure 20. Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS TJ = 25C TJ = 125C 5000 10 (PNP) Cobo 5.0 Cibo 3.0 2.0 1.0 0.1 0.2 0.3 VCC = 40 V IC/IB = 10 3000 2000 Q, CHARGE (pC) CAPACITANCE (pF) 7.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE BIAS (VOLTS) 1000 700 500 300 200 100 70 50 20 30 40 QT 1.0 2.0 3.0 Figure 21. Capacitance t f , FALL TIME (ns) TIME (ns) 15 V 40 V 2.0 3.0 5.0 7.0 10 20 30 200 50 70 100 VCC = 40 V IB1 = IB2 IC/IB = 20 100 70 50 30 20 IC/IB = 10 10 2.0 V 7 5 td @ VOB = 0 V 1.0 (PNP) 300 200 tr @ VCC = 3.0 V 30 20 10 7 5 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 500 IC/IB = 10 (PNP) 100 70 50 QA Figure 22. Charge Data 500 300 200 (PNP) 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 23. Turn-On Time Figure 24. Fall Time http://onsemi.com 482 200 MBT3946DW1T1 (PNP) TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = -5.0 Vdc, TA = 25C, Bandwidth = 1.0 Hz) 12 SOURCE RESISTANCE = 200 IC = 1.0 mA 4.0 f = 1.0 kHz SOURCE RESISTANCE = 200 IC = 0.5 mA 3.0 SOURCE RESISTANCE = 2.0 k IC = 50 A 2.0 SOURCE RESISTANCE = 2.0 k IC = 100 A 1.0 0 0.1 0.2 0.4 IC = 1.0 mA 10 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 5.0 (PNP) IC = 0.5 mA 8 6 4 IC = 50 A 2 IC = 100 A (PNP) 1.0 2.0 4.0 10 f, FREQUENCY (kHz) 20 40 0 100 0.1 0.2 40 0.4 1.0 2.0 4.0 10 20 Rg, SOURCE RESISTANCE (k OHMS) Figure 25. 100 Figure 26. h PARAMETERS (VCE = -10 Vdc, f = 1.0 kHz, TA = 25C) 100 hoe, OUTPUT ADMITTANCE ( mhos) 300 h fe , DC CURRENT GAIN (PNP) 200 100 70 50 (PNP) 70 50 30 20 10 7 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5 5.0 7.0 10 0.1 0.2 h ie , INPUT IMPEDANCE (k OHMS) 20 (PNP) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 Figure 28. Output Admittance 5.0 7.0 10 hre , VOLTAGE FEEDBACK RATIO (x 10 -4) Figure 27. Current Gain 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 10 7.0 (PNP) 5.0 3.0 2.0 1.0 0.7 0.5 0.1 Figure 29. Input Impedance 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 Figure 30. Voltage Feedback Ratio http://onsemi.com 483 MBT3946DW1T1 (PNP) h FE, DC CURRENT GAIN (NORMALIZED) TYPICAL STATIC CHARACTERISTICS 2.0 TJ = +125C VCE = 1.0 V +25C 1.0 0.7 -55C 0.5 0.3 (PNP) 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 20 30 50 70 100 200 VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 31. DC Current Gain 1.0 TJ = 25C (PNP) 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 IB, BASE CURRENT (mA) 0.7 1.0 2.0 3.0 5.0 7.0 10 1.0 TJ = 25C V, VOLTAGE (VOLTS) 0.8 V , TEMPERATURE COEFFICIENTS (mV/ C) Figure 32. Collector Saturation Region VBE(sat) @ IC/IB = 10 VBE @ VCE = 1.0 V 0.6 (PNP) 0.4 VCE(sat) @ IC/IB = 10 0.2 0 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 1.0 0.5 VC FOR VCE(sat) 0 +25C TO +125C -55C TO +25C (PNP) -0.5 +25C TO +125C -1.0 -55C TO +25C VB FOR VBE(sat) -1.5 -2.0 0 Figure 33. "ON" Voltages 20 40 60 80 100 120 140 IC, COLLECTOR CURRENT (mA) 160 Figure 34. Temperature Coefficients http://onsemi.com 484 180 200 ON Semiconductor MMBD2835LT1 MMBD2836LT1 Monolithic Dual Switching Diodes 3 MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage MMBD2835LT1 MMBD2836LT1 Forward Current 1 Symbol Value Unit VR 35 75 Vdc IF 100 mAdc Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W PD 300 mW 2.4 mW/C RJA 417 C/W TJ, Tstg -55 to +150 C 2 CASE 318-08, STYLE 12 SOT-23 (TO-236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature CATHODE 1 ANODE 3 2 CATHODE DEVICE MARKING MMBD2835LT1 = A3X; MMBD2836LT1 = A2X ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Max Unit V(BR) 35 75 -- -- Vdc IR -- -- OFF CHARACTERISTICS Reverse Breakdown Voltage (IR = 100 Adc) MMBD2835LT1 MMBD2836LT1 Reverse Voltage Leakage Current (Note 3) (VR = 30 Vdc) (VR = 50 Vdc) MMBD2835LT1 MMBD2836LT1 nAdc 100 100 Diode Capacitance (VR = 0 V, f = 1.0 MHz) CT -- 4.0 pF Forward Voltage (IF = 10 mAdc) Forward Voltage (IF = 50 mAdc) Forward Voltage (IF = 100 mAdc) VF -- -- -- 1.0 1.0 1.2 Vdc Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1) trr -- 4.0 ns 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. For each individual diode while the second diode is unbiased. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 2 485 Publication Order Number: MMBD2835LT1/D MMBD2835LT1 MMBD2836LT1 820 +10 V 2.0 k IF 100 H tp tr 0.1 F IF t trr 10% t 0.1 F 90% DUT 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE IR VR INPUT SIGNAL iR(REC) = 1.0 mA OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr Figure 1. Recovery Time Equivalent Test Circuit CURVES APPLICABLE TO EACH CATHODE TA = 85C I R , REVERSE CURRENT ( A) 10 TA = -40C 10 TA = 25C 1.0 0.1 0.2 0.4 0.6 0.8 1.0 TA = 125C 1.0 TA = 85C 0.1 TA = 55C 0.01 0.001 1.2 TA = 150C TA = 25C 10 0 20 30 VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 3. Leakage Current 1.75 C D , DIODE CAPACITANCE (pF) I F, FORWARD CURRENT (mA) 100 1.50 1.25 1.00 0.75 0 2.0 4.0 6.0 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance http://onsemi.com 486 8.0 40 50 ON Semiconductor MMBD2837LT1 MMBD2838LT1 Monolithic Dual Switching Diodes MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit VRM 75 Vdc VR 30 50 Vdc Peak Forward Current IFM 450 300 mAdc Average Rectified Current IO 150 100 mAdc Peak Reverse Voltage D.C. Reverse Voltage MMBD2837LT1 MMBD2838LT1 3 1 2 CASE 318-08, STYLE 9 SOT-23 (TO-236AB) ANODE 1 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 TA = 25C Derate above 25C Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W PD 300 mW 2.4 mW/C RJA 417 C/W TJ, Tstg -55 to +150 C Board(1) Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 3 CATHODE 2 ANODE DEVICE MARKING MMBD2837LT1 = A5; MMBD2838LT1 = MA6 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Max Unit V(BR) 35 75 -- -- Vdc -- -- 0.1 0.1 OFF CHARACTERISTICS Reverse Breakdown Voltage (I(BR) = 100 Adc) MMBD2837LT1 MMBD2838LT1 Reverse Voltage Leakage Current (Note 3.) (VR = 30 Vdc) (VR = 50 Vdc) Adc IR MMBD2837LT1 MMBD2838LT1 Diode Capacitance (VR = 0 V, f = 1.0 MHz) CT -- 4.0 pF Forward Voltage (IF = 10 mAdc) Forward Voltage (IF = 50 mAdc) Forward Voltage (IF = 100 mAdc) VF -- -- -- 1.0 1.0 1.2 Vdc Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1) trr -- 4.0 ns 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. For each individual diode while the second diode is unbiased. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 2 487 Publication Order Number: MMBD2837LT1/D MMBD2837LT1 MMBD2838LT1 820 +10 V 2.0 k IF 100 H tp tr 0.1 F IF t trr 10% t 0.1 F 90% DUT 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE IR VR INPUT SIGNAL iR(REC) = 1.0 mA OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr Figure 1. Recovery Time Equivalent Test Circuit CURVES APPLICABLE TO EACH CATHODE TA = 85C I R , REVERSE CURRENT ( A) 10 TA = -40C 10 TA = 25C 1.0 0.1 0.2 0.4 0.6 0.8 1.0 TA = 125C 1.0 TA = 85C 0.1 TA = 55C 0.01 0.001 1.2 TA = 150C TA = 25C 10 0 20 30 VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 3. Leakage Current 1.0 CD, DIODE CAPACITANCE (pF) I F, FORWARD CURRENT (mA) 100 0.9 0.8 0.7 0.6 0 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance http://onsemi.com 488 8 40 50 MMBD330T1, MMBD770T1 Schottky Barrier Diodes Schottky barrier diodes are designed primarily for high-efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. They are housed in the SOT-323/SC-70 package which is designed for low-power surface mount applications. * Extremely Low Minority Carrier Lifetime * Very Low Capacitance * Low Reverse Leakage * Available in 8 mm Tape and Reel http://onsemi.com MARKING DIAGRAMS 4T 3 1 MMBD330T1 2 MAXIMUM RATINGS Rating Reverse Voltage 30T1 Symbol Value Unit VR 30 70 Vdc MMBD3 SC-70/SOT-323 CASE 419 5H MMBD7 MMBD770T1 70T1 Forward Power Dissipation TA = 25C PF 120 mW Junction Temperature TJ -55 to +125 C Device Package Shipping Tstg -55 to +150 C MMBD330T1 SC-70 3000/Tape & Reel MMBD770T1 SC-70 3000/Tape & Reel Storage Temperature Range ORDERING INFORMATION DEVICE MARKING MMBD330T1 = 4T MMBD770T1 = 5H Preferred devices are recommended choices for future use and best overall value. ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 A) Symbol MMBD330T1 MMBD770T1 Reverse Leakage (VR = 25 V) (VR = 35 V) MMBD330T1 MMBD770T1 Semiconductor Components Industries, LLC, 2001 September, 2001 - Rev. 0 Typ Max 30 70 -- -- -- -- -- -- 0.9 0.5 1.5 1.0 -- -- 13 9.0 200 200 -- -- -- -- 0.38 0.52 0.42 0.70 0.45 0.60 0.50 1.0 V(BR)R MMBD330T1 MMBD770T1 Diode Capacitance (VR = 15 Volts, f = 1.0 MHZ) (VR = 20 Volts, f = 1.0 MHZ) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mA) (IF = 1.0 mAdc) (IF = 10 mA) Min Volts CT pF IR nAdc VF MMBD330T1 MMBD770T1 489 Unit Vdc Publication Order Number: MMBD330T1/D MMBD330T1, MMBD770T1 TYPICAL CHARACTERISTICS MMBD330T1 MMBD330T1 2.4 500 , MINORITY CARRIER LIFETIME (ps) CT, TOTAL CAPACITANCE (pF) 2.8 f = 1.0 MHz 2.0 1.6 1.2 0.8 0.4 0 0 3.0 6.0 9.0 12 15 18 21 VR, REVERSE VOLTAGE (VOLTS) 24 27 MMBD330T1 400 KRAKAUER METHOD 300 200 100 0 30 0 Figure 1. Total Capacitance 100 TA = 100C TA = 75C 0 6.0 12 18 VR, REVERSE VOLTAGE (VOLTS) 30 40 50 60 70 IF, FORWARD CURRENT (mA) 80 90 100 MMBD330T1 TA = -40C 10 TA = 85C 1.0 TA = 25C 0.01 0.001 IF, FORWARD CURRENT (mA) IR, REVERSE LEAKAGE ( A) MMBD330T1 0.1 20 Figure 2. Minority Carrier Lifetime 10 1.0 10 24 30 0.1 TA = 25C 0.2 Figure 3. Reverse Leakage 0.4 0.6 0.8 VF, FORWARD VOLTAGE (VOLTS) Figure 4. Forward Voltage http://onsemi.com 490 1.0 1.2 MMBD330T1, MMBD770T1 TYPICAL CHARACTERISTICS MMBD770T1 MMBD770T1 1.6 500 , MINORITY CARRIER LIFETIME (ps) CT, TOTAL CAPACITANCE (pF) 2.0 f = 1.0 MHz 1.2 0.8 0.4 0 0 5.0 10 15 20 25 30 35 VR, REVERSE VOLTAGE (VOLTS) 40 45 MMBD770T1 400 KRAKAUER METHOD 300 200 100 0 50 0 10 Figure 5. Total Capacitance 100 MMBD770T1 TA = 100C 1.0 TA = 75C 0.1 30 40 50 60 70 IF, FORWARD CURRENT (mA) 80 90 100 Figure 6. Minority Carrier Lifetime IF, FORWARD CURRENT (mA) IR, REVERSE LEAKAGE ( A) 10 20 MMBD770T1 10 TA = 85C TA = -40C 1.0 0.01 0.001 TA = 25C 0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) 40 50 0.1 Figure 7. Reverse Leakage TA = 25C 0.2 0.4 0.8 1.2 VF, FORWARD VOLTAGE (VOLTS) Figure 8. Forward Voltage http://onsemi.com 491 1.6 2.0 ON Semiconductor MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1 Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra-fast switching circuits. * Very Low Capacitance -- Less Than 1.0 pF @ Zero Volts * Low Forward Voltage -- 0.5 Volts (Typ) @ IF = 10 mA 3 1 2 1 ANODE 3 CATHODE/ANODE MAXIMUM RATINGS (EACH DIODE) Rating Continuous Reverse Voltage 2 CATHODE MMBD352LT1 CASE 318-08, STYLE 11 SOT-23 (TO-236AB) Symbol Value Unit VR 7.0 VCC Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W PD 300 mW 2.4 mW/C RJA 417 C/W TJ, Tstg -55 to +150 C THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 1 CATHODE 3 CATHODE/ANODE DEVICE MARKING MMBD352LT1 = M5G; MMBD353LT1 = M4F; MMBD354LT1 = M6H; MMBD355LT1 = MJ1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Max Unit Forward Voltage (IF = 10 mAdc) VF -- 0.60 V Reverse Voltage Leakage Current (Note 3.) (VR = 3.0 V) (VR = 7.0 V) IR Capacitance (VR = 0 V, f = 1.0 MHz) C OFF CHARACTERISTICS A -- -- 0.25 10 -- 1.0 2 ANODE MMBD353LT1 CASE 318-08, STYLE 19 SOT-23 (TO-236AB) 3 CATHODE ANODE 1 2 ANODE MMBD354LT1 CASE 318-08, STYLE 9 SOT-23 (TO-236AB) ANODE 3 CATHODE 1 2 CATHODE MMBD355LT1 CASE 318-08, STYLE 12 SOT-23 (TO-236AB) pF 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. For each individual diode while the second diode is unbiased. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 3 492 Publication Order Number: MMBD352LT1/D MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1 TYPICAL CHARACTERISTICS 1.0 TA = 85C C, CAPACITANCE (pF) I F, FORWARD CURRENT (mA) 100 10 TA = -40C 1.0 0.1 TA = 25C 0.3 0.4 0.5 0.6 0.7 0.9 0.8 0.7 0.6 0.8 0 1.0 2.0 3.0 VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 1. Forward Voltage Figure 2. Capacitance http://onsemi.com 493 4.0 ON Semiconductor Dual Schottky Barrier Diode MMBD352WT1 These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra-fast switching circuits. 3 * Very Low Capacitance -- Less Than 1.0 pF @ Zero Volts * Low Forward Voltage -- 0.5 Volts (Typ) @ IF = 10 mA 1 2 1 ANODE MAXIMUM RATINGS Rating Symbol Value Unit VR 7.0 VCC Symbol Max Unit PD 200 mW 1.6 mW/C RJA 625 C/W PD 300 mW 2.4 mW/C RJA 417 C/W TJ, Tstg -55 to +150 C Continuous Reverse Voltage 3 CATHODE/ANODE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 2 CATHODE MMBD352WT1 CASE 419-04, STYLE 9 SOT-323 (SC-70) DEVICE MARKING MMBD352WT1 = M5 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Min Max Unit Forward Voltage (IF = 10 mAdc) VF -- 0.60 V Reverse Voltage Leakage Current (VR = 3.0 V) (VR = 7.0 V) IR -- -- 0.25 10 Capacitance (VR = 0 V, f = 1.0 MHz) C -- 1.0 Characteristic OFF CHARACTERISTICS A pF 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 494 Publication Order Number: MMBD352WT1/D MMBD352WT1 TYPICAL CHARACTERISTICS 1.0 TA = 85C C, CAPACITANCE (pF) I F, FORWARD CURRENT (mA) 100 10 TA = -40C 1.0 0.1 TA = 25C 0.3 0.4 0.5 0.6 0.7 0.9 0.8 0.7 0.6 0.8 0 1.0 2.0 3.0 VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 1. Forward Voltage Figure 2. Capacitance http://onsemi.com 495 4.0 ON Semiconductor Dual Hot-Carrier Diodes MMBD452LT1 Schottky Barrier Diodes ON Semiconductor Preferred Devices These devices are designed primarily for high-efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low-cost, high-volume consumer and industrial/commercial requirements. 30 VOLTS DUAL HOT-CARRIER DETECTOR AND SWITCHING DIODES * Extremely Low Minority Carrier Lifetime * Very Low Capacitance * Low Reverse Leakage 3 1 MAXIMUM RATINGS (TJ = 125C unless otherwise noted) Rating 2 Symbol Value Unit Reverse Voltage VR 30 Volts Forward Power Dissipation @ TA = 25C Derate above 25C PF 225 1.8 mW mW/C Operating Junction Temperature Range TJ CASE 318-08, STYLE 11 SOT-23 (TO-236AB) 1 ANODE C 3 CATHODE/ANODE -55 to +125 Storage Temperature Range Tstg C -55 to +150 2 CATHODE DEVICE MARKING MMBD452LT1 = 5N ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Typ Max Unit V(BR)R 30 -- -- Volts Total Capacitance (VR = 15 V, f = 1.0 MHz) Figure 1 CT -- 0.9 1.5 pF Reverse Leakage (VR = 25 V) Figure 3 IR -- 13 200 nAdc Forward Voltage (IF = 1.0 mAdc) Figure 4 VF -- 0.38 0.45 Vdc Forward Voltage (IF = 10 mAdc) Figure 4 VF -- 0.52 0.6 Vdc Reverse Breakdown Voltage (IR = 10 A) Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 496 Publication Order Number: MMBD452LT1/D MMBD452LT1 TYPICAL ELECTRICAL CHARACTERISTICS 500 f = 1.0 MHz 2.4 , MINORITY CARRIER LIFETIME (ps) C T, TOTAL CAPACITANCE (pF) 2.8 2.0 1.6 1.2 0.8 0.4 0 0 3.0 6.0 18 9.0 12 15 21 VR, REVERSE VOLTAGE (VOLTS) 24 27 400 KRAKAUER METHOD 300 200 100 0 30 0 Figure 1. Total Capacitance 30 40 50 60 70 IF, FORWARD CURRENT (mA) 80 90 100 100 TA = 100C 1.0 IF, FORWARD CURRENT (mA) IR, REVERSE LEAKAGE ( A) 20 Figure 2. Minority Carrier Lifetime 10 75C 0.1 25C 0.01 0.001 10 0 6.0 12 18 VR, REVERSE VOLTAGE (VOLTS) 24 30 10 1.0 0.1 TA = 25C 0.2 Figure 3. Reverse Leakage IF(PEAK) TA = -40C TA = 85C 0.4 0.6 0.8 VF, FORWARD VOLTAGE (VOLTS) 1.0 Figure 4. Forward Voltage CAPACITIVE CONDUCTION IR(PEAK) FORWARD CONDUCTION SINUSOIDAL GENERATOR BALLAST NETWORK (PADS) STORAGE CONDUCTION PADS DUT Figure 5. Krakauer Method of Measuring Lifetime http://onsemi.com 497 SAMPLING OSCILLOSCOPE (50 INPUT) 1.2 ON Semiconductor Switching Diode MMBD6050LT1 3 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W PD 300 mW 2.4 mW/C RJA 417 C/W TJ, Tstg -55 to +150 C Peak Forward Surge Current 1 2 CASE 318-08, STYLE 8 SOT-23 (TO-236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 3 CATHODE 1 ANODE DEVICE MARKING MMBD6050LT1 = 5A ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR) 70 -- Vdc Reverse Voltage Leakage Current (VR = 50 Vdc) IR -- 0.1 Adc Forward Voltage (IF = 1.0 mAdc) (IF = 100 mAdc) VF 0.55 0.85 0.7 1.1 Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1) trr -- 4.0 ns Capacitance (VR = 0 V) C -- 2.5 pF OFF CHARACTERISTICS Reverse Breakdown Voltage (I(BR) = 100 Adc) Vdc 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 2 498 Publication Order Number: MMBD6050LT1/D MMBD6050LT1 820 +10 V 2.0 k IF 100 H tp tr 0.1 F IF t trr 10% t 0.1 F 90% DUT 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE IR VR INPUT SIGNAL iR(REC) = 1.0 mA OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr Figure 1. Recovery Time Equivalent Test Circuit TYPICAL CHARACTERISTICS TA = 85C I R , REVERSE CURRENT ( A) 10 TA = -40C 10 TA = 25C 1.0 0.1 0.2 0.4 0.6 0.8 1.0 TA = 125C 1.0 TA = 85C 0.1 TA = 55C 0.01 0.001 1.2 TA = 150C TA = 25C 10 0 20 30 VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 3. Leakage Current 0.68 C D , DIODE CAPACITANCE (pF) I F, FORWARD CURRENT (mA) 100 0.64 0.60 0.56 0.52 0 2.0 4.0 6.0 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance http://onsemi.com 499 8.0 40 50 MMBD6100LT1 Monolithic Dual Switching Diode http://onsemi.com MAXIMUM RATINGS (EACH DIODE) Symbol Rating Value Unit VR Reverse Voltage 70 Vdc IF Forward Current 200 mAdc Peak Forward Surge Current 500 mAdc IFM(surge) 3 1 2 PLASTIC SOT-23S CASE 318 THERMAL CHARACTERISTICS Symbol PD RJA PD RJA TJ, Tstg Characteristic Max Unit Total Device Dissipation, FR-5 Board (1) TA = 25C Derate above 25C 225 mW 1.8 mW/C Thermal Resistance, Junction to Ambient 556 C/W Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C 300 mW 2.4 mW/C Thermal Resistance, Junction to Ambient 417 C/W -55 to +150 C Junction and Storage Temperature Range DEVICE MARKING 5BM (1) FR-5 = 1.0 0.75 0.062 in. (2) Alumina = 0.4 0.3 0.024 in. 99.5% alumina. ANODE 1 3 CATHODE 2 ANODE ORDERING INFORMATION Semiconductor Components Industries, LLC, 2000 April, 2000 - Rev. 1 500 Device Package Shipping MMBD6100LT1 SOT-23S 3000/Tape & Reel MMBD6100LT3 SOT-23S 10,000/Tape & Reel Publication Order Number: MMBD6100LT1/D MMBD6100LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Max Unit V(BR) 70 -- Vdc Reverse Voltage Leakage Current (VR = 50 Vdc) (For each individual diode while the second diode is unbiased) IR -- 0.1 Adc Forward Voltage (IF = 1.0 mAdc) (IF = 100 mAdc) VF 0.55 0.8 0.7 1.1 Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1) trr -- 4.0 ns Capacitance (VR = 0 V) C -- 2.5 pF trr t OFF CHARACTERISTICS Reverse Breakdown Voltage (I(BR) = 100 Adc) Vdc 820 +10 V 2.0 k 100 H tr 0.1 F IF tp t IF 10% 0.1 F 50 OUTPUT PULSE GENERATOR DUT 90% 50 INPUT SAMPLING OSCILLOSCOPE VR IR INPUT SIGNAL Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr Figure 1. Recovery Time Equivalent Test Circuit http://onsemi.com 501 iR(REC) = 1.0 mA OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) MMBD6100LT1 CURVES APPLICABLE TO EACH CATHODE TA = 85C I R , REVERSE CURRENT ( A) 10 TA = -40C 10 TA = 25C 1.0 0.1 0.2 0.4 0.6 0.8 1.0 TA = 125C 1.0 TA = 85C 0.1 TA = 55C 0.01 0.001 1.2 TA = 150C TA = 25C 10 0 20 30 VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 3. Leakage Current 1.0 CD, DIODE CAPACITANCE (pF) I F, FORWARD CURRENT (mA) 100 0.9 0.8 0.7 0.6 0 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance http://onsemi.com 502 8 40 50 ON Semiconductor Dual Switching Diode MMBD7000LT1 ON Semiconductor Preferred Device 3 1 2 MAXIMUM RATINGS (EACH DIODE) Symbol Value Unit Reverse Voltage Rating VR 100 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W PD 300 mW 2.4 mW/C RJA 417 C/W TJ, Tstg -55 to +150 C Peak Forward Surge Current CASE 318-08, STYLE 8 SOT-23 (TO-236AB) 1 ANODE 3 CATHODE/ANODE 2 CATHODE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 TA = 25C Derate above 25C Board(1) Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature DEVICE MARKING MMBD7000LT1 = M5C ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Max Unit V(BR) 100 -- Vdc IR IR2 IR3 -- -- -- 1.0 3.0 100 0.55 0.67 0.75 0.7 0.82 1.1 OFF CHARACTERISTICS Reverse Breakdown Voltage (I(BR) = 100 Adc) Adc Reverse Voltage Leakage Current (VR = 50 Vdc) (VR = 100 Vdc) (VR = 50 Vdc, 125C) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 100 mAdc) VF Vdc Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1) trr -- 4.0 ns Capacitance (VR = 0 V) C -- 1.5 pF 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 503 Publication Order Number: MMBD7000LT1/D MMBD7000LT1 820 +10 V 2.0 k IF 100 H tp tr 0.1 F IF t trr 10% t 0.1 F 90% DUT 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE IR VR INPUT SIGNAL iR(REC) = 1.0 mA OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr Figure 1. Recovery Time Equivalent Test Circuit CURVES APPLICABLE TO EACH DIODE TA = 85C I R , REVERSE CURRENT ( A) 10 TA = -40C 10 TA = 25C 1.0 0.1 0.2 0.4 0.6 0.8 1.0 TA = 125C 1.0 TA = 85C 0.1 TA = 55C 0.01 0.001 1.2 TA = 150C TA = 25C 10 0 20 30 VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 3. Leakage Current 0.68 C D , DIODE CAPACITANCE (pF) I F, FORWARD CURRENT (mA) 100 0.64 0.60 0.56 0.52 0 2.0 4.0 6.0 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance http://onsemi.com 504 8.0 40 50 ON Semiconductor MMBD717LT1 Common Anode Schottky Barrier Diodes ON Semiconductor Preferred Device These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. * Extremely Fast Switching Speed 20 VOLT SCHOTTKY BARRIER DETECTOR AND SWITCHING DIODES * Extremely Low Forward Voltage -- 0.28 Volts (Typ) @ IF = 1 mAdc ANODE 3 3 1 CATHODE 1 2 2 CATHODE CASE 419-04, STYLE 4 SOT-323 (SC-70) MAXIMUM RATINGS (TJ = 125C unless otherwise noted) Symbol Value Unit Reverse Voltage VR 20 Volts Forward Power Dissipation @ TA = 25C Derate above 25C PF 200 1.6 mW mW/C Operating Junction Temperature Range TJ Storage Temperature Range Tstg Rating C -55 to +150 C -55 to +150 DEVICE MARKING MMBD717LT1 = B3 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)R 20 -- -- Volts Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT -- 2.0 2.5 pF Reverse Leakage (VR = 10 V) (For each individual diode while the second diode is unbiased) IR -- 0.05 1.0 Adc Forward Voltage (IF = 1.0 mAdc) VF -- 0.28 0.37 Vdc Reverse Breakdown Voltage (IR = 10 A) Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 April, 2001 - Rev. 5 505 Publication Order Number: MMBD717LT1/D MMBD717LT1 820 +10 V 2k 0.1 F IF 100 H tr tp IF t trr 10% 0.1 F DUT 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE 90% IR VR INPUT SIGNAL t iR(REC) = 1 mA OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr Figure 1. Recovery Time Equivalent Test Circuit 100 IR , REVERSE CURRENT (A) 1.0 150C 0.1 125C 0 0.05 85C 0.1 0.15 25C 0.2 0.25 -40C 0.3 -55C 0.35 0.4 0.45 125C 1.0 85C 0.1 0.01 0.001 0.5 TA = 150C 10 25C 0 1.0 2.0 VF, FORWARD VOLTAGE (VOLTS) Figure 2. Typical Forward Voltage 3.0 4.0 5.0 6.0 7.0 8.0 VR, REVERSE VOLTAGE (VOLTS) 2.5 2.0 1.5 1.0 0.5 0 0 2.0 9.0 Figure 3. Reverse Current versus Reverse Voltage 3.0 C T, CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 10 4.0 6.0 8.0 10 12 14 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Typical Capacitance http://onsemi.com 506 16 18 10 MMBD914LT1 Preferred Device High-Speed Switching Diode MAXIMUM RATINGS Rating Symbol Value Unit VR 100 Vdc Reverse Voltage Forward Current Peak Forward Surge Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit PD 225 mW http://onsemi.com 3 CATHODE 1 ANODE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board (Note 1.) TA = 25C Derate above 25C 3 Thermal Resistance, Junction to Ambient 1.8 mW/C RJA 556 C/W PD 300 mW 2.4 mW/C C/W Total Device Dissipation Alumina Substrate (Note 2.) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient RJA 417 Junction and Storage Temperature Range TJ, Tstg -55 to +150 1 2 SOT-23S CASE 318 STYLE 8 MARKING DIAGRAM C 5D ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR) 100 - Vdc 5D = Device Code OFF CHARACTERISTICS Reverse Breakdown Voltage (IR = 100 Adc) ORDERING INFORMATION Reverse Voltage Leakage Current (VR = 20 Vdc) (VR = 75 Vdc) IR Diode Capacitance (VR = 0, f = 1.0 MHz) - - 25 5.0 nAdc Adc CT - 4.0 pF Forward Voltage (IF = 10 mAdc) VF - 1.0 Vdc Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1) trr - 4.0 ns Device Package Shipping MMBD914LT1 SOT-23 3000/Tape & Reel Preferred devices are recommended choices for future use and best overall value. 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. Semiconductor Components Industries, LLC, 2001 January, 2001 - Rev. 1 507 Publication Order Number: MMBD914LT1/D MMBD914LT1 820 +10 V 2.0 k IF 100 H tp tr 0.1 F IF t trr 10% t 0.1 F DUT 50 OUTPUT PULSE GENERATOR 90% 50 INPUT SAMPLING OSCILLOSCOPE IR VR INPUT SIGNAL iR(REC) = 1.0 mA OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr Figure 1. Recovery Time Equivalent Test Circuit TA = 85C I R , REVERSE CURRENT ( A) 10 TA = -40C 10 TA = 25C 1.0 0.1 0.2 0.4 0.6 0.8 1.0 TA = 125C 1.0 TA = 85C 0.1 TA = 55C 0.01 0.001 1.2 TA = 150C TA = 25C 10 0 20 30 VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 3. Leakage Current 0.68 C D , DIODE CAPACITANCE (pF) I F, FORWARD CURRENT (mA) 100 0.64 0.60 0.56 0.52 0 2.0 4.0 6.0 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance http://onsemi.com 508 8.0 40 50 ON Semiconductor MMBF4391LT1 MMBF4392LT1 MMBF4393LT1 JFET Switching Transistors N-Channel 3 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain-Source Voltage VDS 30 Vdc Drain-Gate Voltage VDG 30 Vdc Gate-Source Voltage VGS 30 Vdc Forward Gate Current IG(f) 50 mAdc Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W TJ, Tstg -55 to +150 C CASE 318-08, STYLE 10 SOT-23 (TO-236AB) 2 SOURCE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 3 GATE 1 DRAIN DEVICE MARKING MMBF4391LT1 = 6J; MMBF4392LT1 = 6K; MMBF4393LT1 = 6G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)GSS 30 -- Vdc -- -- 1.0 0.20 nAdc Adc -4.0 -2.0 -0.5 -10 -5.0 -3.0 -- -- 1.0 1.0 OFF CHARACTERISTICS Gate-Source Breakdown Voltage (IG = 1.0 Adc, VDS = 0) Gate Reverse Current (VGS = 15 Vdc, VDS = 0, TA = 25C) (VGS = 15 Vdc, VDS = 0, TA = 100C) IGSS Gate-Source Cutoff Voltage (VDS = 15 Vdc, ID = 10 nAdc) VGS(off) MMBF4391LT1 MMBF4392LT1 MMBF4393LT1 Off-State Drain Current (VDS = 15 Vdc, VGS = -12 Vdc) (VDS = 15 Vdc, VGS = -12 Vdc, TA = 100C) Vdc ID(off) nAdc Adc 1. FR-5 = 1.0 0.75 0.062 in. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 509 Publication Order Number: MMBF4391LT1/D MMBF4391LT1 MMBF4392LT1 MMBF4393LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Characteristic Min Max 50 25 5.0 150 75 30 -- -- -- 0.4 0.4 0.4 -- -- -- 30 60 100 Unit ON CHARACTERISTICS Zero-Gate-Voltage Drain Current (VDS = 15 Vdc, VGS = 0) IDSS MMBF4391LT1 MMBF4392LT1 MMBF4393LT1 Drain-Source On-Voltage (ID = 12 mAdc, VGS = 0) (ID = 6.0 mAdc, VGS = 0) (ID = 3.0 mAdc, VGS = 0) mAdc VDS(on) MMBF4391LT1 MMBF4392LT1 MMBF4393LT1 Static Drain-Source On-Resistance (ID = 1.0 mAdc, VGS = 0) Vdc rDS(on) MMBF4391LT1 MMBF4392LT1 MMBF4393LT1 SMALL-SIGNAL CHARACTERISTICS Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Ciss -- 14 pF Reverse Transfer Capacitance (VDS = 0, VGS = 12 Vdc, f = 1.0 MHz) Crss -- 3.5 pF TYPICAL CHARACTERISTICS 1000 TJ = 25C 500 MMBF4391 MMBF4392 MMBF4393 RK = RD' 200 100 500 VGS(off) = 12 V = 7.0 V = 5.0 V 50 20 10 RK = 0 5.0 2.0 1.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 ID, DRAIN CURRENT (mA) 20 30 t r , RISE TIME (ns) t d(on) , TURN-ON DELAY TIME (ns) 1000 200 100 10 5.0 RK = 0 2.0 3.0 5.0 7.0 10 ID, DRAIN CURRENT (mA) 1000 500 VGS(off) = 12 V = 7.0 V = 5.0 V t f , FALL TIME (ns) t d(off) , TURN-OFF DELAY TIME (ns) MMBF4391 MMBF4392 MMBF4393 RK = RD' 50 20 10 5.0 RK = 0 2.0 1.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 ID, DRAIN CURRENT (mA) 20 30 50 Figure 2. Rise Time TJ = 25C 200 100 VGS(off) = 12 V = 7.0 V = 5.0 V 20 Figure 1. Turn-On Delay Time 1000 500 TJ = 25C MMBF4391 MMBF4392 MMBF4393 50 2.0 1.0 0.5 0.7 1.0 50 RK = RD' 20 30 200 100 TJ = 25C MMBF4391 MMBF4392 MMBF4393 20 10 RK = 0 5.0 Figure 3. Turn-Off Delay Time 2.0 3.0 5.0 7.0 10 20 ID, DRAIN CURRENT (mA) Figure 4. Fall Time http://onsemi.com 510 VGS(off) = 12 V = 7.0 V = 5.0 V 50 2.0 1.0 0.5 0.7 1.0 50 RK = RD' 30 50 MMBF4391LT1 MMBF4392LT1 MMBF4393LT1 NOTE 1 -VDD The switching characteristics shown above were measured using a test circuit similar to Figure 5. At the beginning of the switching interval, the gate voltage is at Gate Supply Voltage (-VGG). The Drain-Source Voltage (VDS) is slightly lower than Drain Supply Voltage (VDD) due to the voltage divider. Thus Reverse Transfer Capacitance (Crss) of Gate-Drain Capacitance (Cgd) is charged to VGG + VDS. During the turn-on interval, Gate-Source Capacitance (Cgs) discharges through the series combination of RGen and RK. Cgd must discharge to VDS(on) through RG and RK in series with the parallel combination of effective load impedance (R'D) and Drain-Source Resistance (rDS). During the turn-off, this charge flow is reversed. Predicting turn-on time is somewhat difficult as the channel resistance rDS is a function of the gate-source voltage. While Cgs discharges, VGS approaches zero and rDS decreases. Since Cgd discharges through rDS, turn-on time is non-linear. During turn-off, the situation is reversed with rDS increasing as Cgd charges. The above switching curves show two impedance conditions; 1) RK is equal to RD' which simulates the switching behavior of cascaded stages where the driving source impedance is normally the load impedance of the previous stage, and 2) RK = 0 (low impedance) the driving source impedance is that of the generator. RD SET VDS(off) = -10 V INPUT RGEN 50 RK RT 50 VGEN INPUT PULSE tr 0.25 ns tf 0.5 ns PULSE WIDTH = 2.0 s DUTY CYCLE 2.0% OUTPUT RGG 50 VGG RGG > RK RD' = RD(RT + 50) RD + RT + 50 15 20 MMBF4392 10 MMBF4391 C, CAPACITANCE (pF) V fs , FORWARD TRANSFER ADMITTANCE (mmhos) Figure 5. Switching Time Test Circuit 10 MMBF4393 7.0 Tchannel = 25C 5.0 VDS = 15 V 3.0 2.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 Cgs 7.0 Cgd 5.0 3.0 2.0 1.5 Tchannel = 25C (Cds is negligible 1.0 0.03 0.05 0.1 50 ID, DRAIN CURRENT (mA) IDSS 25 mA = 10 160 mA 50 mA 75 mA 100 mA 125 mA 120 80 40 Tchannel = 25C 0 0 1.0 2.0 3.0 5.0 4.0 6.0 7.0 VGS, GATE-SOURCE VOLTAGE (VOLTS) 1.0 3.0 5.0 10 30 Figure 7. Typical Capacitance r DS(on), DRAIN-SOURCE ON-STATE RESISTANCE (NORMALIZED) r DS(on), DRAIN-SOURCE ON-STATE RESISTANCE (OHMS) Figure 6. Typical Forward Transfer Admittance 200 0.3 0.5 VR, REVERSE VOLTAGE (VOLTS) 8.0 2.0 1.8 ID = 1.0 mA VGS = 0 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -70 -40 -10 20 50 80 110 140 Tchannel, CHANNEL TEMPERATURE (C) Figure 8. Effect of Gate-Source Voltage on Drain-Source Resistance Figure 9. Effect of Temperature on Drain-Source On-State Resistance http://onsemi.com 511 170 MMBF4391LT1 MMBF4392LT1 MMBF4393LT1 80 70 60 50 40 30 20 10 0 10 Tchannel = 25C 9.0 8.0 7.0 rDS(on) @ VGS = 0 6.0 VGS(off) 5.0 4.0 3.0 2.0 1.0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 V GS , GATE-SOURCE VOLTAGE (VOLTS) r DS(on) , DRAIN-SOURCE ON-STATE RESISTANCE (OHMS) 100 90 IDSS, ZERO-GATE VOLTAGE DRAIN CURRENT (mA) Figure 10. Effect of IDSS on Drain-Source Resistance and Gate-Source Voltage NOTE 2 The Zero-Gate-Voltage Drain Current (IDSS) is the principle determinant of other J-FET characteristics. Figure 10 shows the relationship of Gate-Source Off Voltage (VGS(off)) and Drain-Source On Resistance (rDS(on)) to IDSS. Most of the devices will be within 10% of the values shown in Figure 10. This data will be useful in predicting the characteristic variations for a given part number. For example: Unknown rDS(on) and VGS range for an MMBF4392 The electrical characteristics table indicates that an MMBF4392 has an IDSS range of 25 to 75 mA. Figure 10 shows rDS(on) = 52 Ohms for IDSS = 25 mA and 30 Ohms for IDSS = 75 mA. The corresponding VGS values are 2.2 volts and 4.8 volts. http://onsemi.com 512 ON Semiconductor JFET VHF/UHF Amplifier Transistor MMBF4416LT1 N-Channel ON Semiconductor Preferred Device MAXIMUM RATINGS 3 Rating Symbol Value Unit Drain-Source Voltage VDS 30 Vdc Drain-Gate Voltage VDG 30 Vdc Gate-Source Voltage VGS 30 Vdc IG 10 mAdc Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W TJ, Tstg -55 to +150 C Gate Current 1 2 CASE 318-08, STYLE 10 SOT-23 (TO-236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 TA = 25C Derate above 25C Board(1) 2 SOURCE Thermal Resistance, Junction to Ambient Junction and Storage Temperature 3 GATE DEVICE MARKING 1 DRAIN MMBF4416LT1 = M6A ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)GSS 30 -- Vdc -- -- 1.0 200 OFF CHARACTERISTICS Gate-Source Breakdown Voltage (IG = 1.0 Adc, VDS = 0) Gate Reverse Current (VGS = 20 Vdc, VDS = 0) (VGS = 20 Vdc, VDS = 0, TA = 150C) IGSS nAdc Gate Source Cutoff Voltage (ID = 1.0 nAdc, VDS = 15 Vdc) VGS(off) -- -6.0 Vdc Gate Source Voltage (ID = 0.5 mAdc, VDS = 15 Vdc) VGS -1.0 -5.5 Vdc IDSS 5.0 15 mAdc VGS(f) -- 1.0 Vdc ON CHARACTERISTICS Zero-Gate-Voltage Drain Current (VGS = 15 Vdc, VGS = 0) Gate-Source Forward Voltage (IG = 1.0 mAdc, VDS = 0) 1. FR-5 = 1.0 0.75 0.062 in. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 513 Publication Order Number: MMBF4416LT1/D MMBF4416LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Min Max Unit Forward Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) |Yfs| 4500 7500 mhos Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) |yos| -- 50 mhos Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Ciss -- 4.0 pF Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 10 MHz) Crss -- 0.8 pF Output Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Coss -- 2.0 pF Characteristic SMALL-SIGNAL CHARACTERISTICS COMMON SOURCE CHARACTERISTICS 30 20 bis @ IDSS 10 7.0 5.0 3.0 gis @ IDSS 2.0 gis @ 0.25 IDSS 1.0 0.7 0.5 0.3 10 grs , REVERSE TRANSADMITTANCE (mmhos) brs , REVERSE SUSCEPTANCE (mmhos) gis, INPUT CONDUCTANCE (mmhos) bis, INPUT SUSCEPTANCE (mmhos) ADMITTANCE PARAMETERS (VDS = 15 Vdc, Tchannel = 25C) bis @ 0.25 IDSS 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 5.0 3.0 2.0 0.25 IDSS 0.3 0.2 0.1 0.07 0.05 500 700 1000 brs @ IDSS 1.0 0.7 0.5 grs @ IDSS, 0.25 IDSS 10 20 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 10 10 7.0 5.0 gfs @ IDSS gfs @ 0.25 IDSS 3.0 2.0 1.0 0.7 0.5 0.3 0.2 10 30 Figure 2. Reverse Transfer Admittance (yrs) gos, OUTPUT ADMITTANCE (mhos) bos, OUTPUT SUSCEPTANCE (mhos) gfs, FORWARD TRANSCONDUCTANCE (mmhos) |b fs|, FORWARD SUSCEPTANCE (mmhos) Figure 1. Input Admittance (yis) 20 |bfs| @ IDSS 30 50 70 100 200 300 f, FREQUENCY (MHz) bos @ IDSS and 0.25 IDSS 2.0 1.0 0.5 0.2 gos @ IDSS 0.1 0.05 |bfs| @ 0.25 IDSS 20 5.0 gos @ 0.25 IDSS 0.02 500 700 1000 0.01 10 Figure 3. Forward Transadmittance (yfs) 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 4. Output Admittance (yos) http://onsemi.com 514 MMBF4416LT1 COMMON SOURCE CHARACTERISTICS S-PARAMETERS (VDS = 15 Vdc, Tchannel = 25C, Data Points in MHz) 30 20 10 0 1.0 40 350 340 400 300 0.8 60 ID = IDSS 500 0.6 800 310 50 10 0 350 340 330 0.4 320 300 60 700 290 70 800 700 280 80 900 0.3 ID = IDSS, 0.25 IDSS 310 900 800 0.2 300 700 600 600 600 80 40 500 400 0.7 70 320 20 300 200 0.9 30 200 100 50 330 ID = 0.25 IDSS 100 0.1 500 290 400 300 280 0.0 200 270 90 100 260 100 260 110 250 110 250 120 240 120 240 130 230 130 230 140 220 140 220 90 900 150 160 170 180 190 200 210 150 160 170 Figure 5. S11s 30 20 10 0 350 340 330 0.6 0.5 60 900 70 80 90 100 110 120 800 700 600 500 0.4 900 800 700 600 500 0.3 100 400 400 0.3 ID = 0.25 IDSS 300 200 0.4 100 0.5 300 ID = IDSS 200 180 190 200 210 Figure 6. S12s 40 50 270 100 130 30 20 10 0 350 340 330 100 200 I = 0.25 IDSS D 300 1.0 400 100 200 500 300 600 400 700 0.9 500 800 600 ID = IDSS 700 900 800 900 0.8 320 40 310 50 300 60 290 70 280 80 270 90 270 260 100 260 250 110 250 240 120 240 230 130 230 220 140 220 0.7 320 310 300 290 280 0.6 0.6 140 150 160 170 180 190 200 210 150 Figure 7. S21s 160 170 180 190 Figure 8. S22s http://onsemi.com 515 200 210 MMBF4416LT1 COMMON GATE CHARACTERISTICS ADMITTANCE PARAMETERS (VDG = 15 Vdc, Tchannel = 25C) 10 7.0 5.0 grg , REVERSE TRANSADMITTANCE (mmhos) brg , REVERSE SUSCEPTANCE (mmhos) gig, INPUT CONDUCTANCE (mmhos) big, INPUT SUSCEPTANCE (mmhos) 20 gig @ IDSS 3.0 grg @ 0.25 IDSS 2.0 1.0 0.7 0.5 big @ IDSS 0.3 0.2 10 20 30 big @ 0.25 IDSS 50 70 100 200 300 f, FREQUENCY (MHz) 0.5 0.3 0.1 0.07 0.05 0.25 IDSS 0.03 0.02 0.01 0.007 0.005 500 700 1000 brg @ IDSS 0.2 gig @ IDSS, 0.25 IDSS 10 10 7.0 5.0 gfg @ IDSS 3.0 gfg @ 0.25 IDSS 2.0 1.0 0.7 0.5 bfg @ IDSS 0.3 brg @ 0.25 IDSS 0.2 0.1 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 10. Reverse Transfer Admittance (yrg) gog, OUTPUT ADMITTANCE (mmhos) bog, OUTPUT SUSCEPTANCE (mmhos) gfg , FORWARD TRANSCONDUCTANCE (mmhos) bfg , FORWARD SUSCEPTANCE (mmhos) Figure 9. Input Admittance (yig) 20 500 700 1000 1.0 0.7 0.5 bog @ IDSS, 0.25 IDSS 0.3 0.2 0.1 0.07 0.05 gog @ IDSS 0.03 0.02 0.01 gog @ 0.25 IDSS 10 Figure 11. Forward Transfer Admittance (yfg) 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 12. Output Admittance (yog) http://onsemi.com 516 MMBF4416LT1 COMMON GATE CHARACTERISTICS S-PARAMETERS (VDS = 15 Vdc, Tchannel = 25C, Data Points in MHz) 30 20 10 0 350 340 0.7 40 100 100 200 200 0.5 300 300 60 ID = IDSS 0.4 70 400 700 400 500 310 50 300 60 290 70 280 80 600 900 270 260 100 110 250 110 120 240 120 130 230 130 220 140 170 180 190 20 10 0 350 200 100 600 ID = IDSS 700 300 290 280 0.0 270 500 600 700 800 800 260 ID = 0.25 IDSS 250 0.01 240 0.02 230 900 0.03 220 0.04 150 160 170 180 190 200 210 340 330 Figure 14. S12g 340 330 30 20 10 40 320 0 1.5 1.0 100 100 0.4 320 0.01 140 210 0.5 40 330 0.02 Figure 13. S11g 30 340 310 900 160 350 0.04 90 100 150 0 800 900 90 40 10 600 800 0.3 320 20 0.03 500 700 80 30 ID = 0.25 IDSS 0.6 50 330 350 300 200 400 0.9 ID = IDSS 500 600 320 700 800 900 310 50 300 60 290 70 280 80 270 90 270 260 100 260 110 250 110 250 120 240 120 240 130 230 130 230 140 220 140 220 50 100 0.3 60 0.2 70 80 ID = 0.25 IDSS 0.1 900 90 900 100 150 160 170 180 190 200 210 ID = IDSS, 0.25 IDSS 0.8 300 0.7 290 280 0.6 150 Figure 15. S21g 160 170 180 190 Figure 16. S22g http://onsemi.com 517 310 200 210 ON Semiconductor JFET - General Purpose Transistor MMBF5457LT1 N-Channel 3 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDS 25 Vdc Drain-Gate Voltage VDG 25 Vdc VGS(r) 25 Vdc IG 10 mAdc Reverse Gate-Source Voltage Gate Current CASE 318-08, STYLE 10 SOT-23 (TO-236AB) 2 SOURCE 3 GATE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 TA = 25C Derate above 25C Board(1) Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W TJ, Tstg -55 to +150 C 1 DRAIN DEVICE MARKING MMBF5457LT1 = 6D ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)GSS 25 - - Vdc - - - - 1.0 200 OFF CHARACTERISTICS Gate-Source Breakdown Voltage (IG = 10 Adc, VDS = 0) Gate Reverse Current (VGS = 15 Vdc, VDS = 0) (VGS = 15 Vdc, VDS = 0, TA = 100C) IGSS nAdc Gate Source Cutoff Voltage (VDS = 15 Vdc, ID = 10 nAdc) VGS(off) 0.5 - -6.0 Vdc Gate Source Voltage (VDS = 15 Vdc, ID = 100 Adc) VGS - -2.5 - Vdc IDSS 1.0 - 5.0 mAdc ON CHARACTERISTICS Zero-Gate-Voltage Drain Current(2) (VDS = 15 Vdc, VGS = 0) 1. FR-5 = 1.0 0.75 0.062 in. 2. Pulse Test: Pulse Width 630 ms, Duty Cycle 10%. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 518 Publication Order Number: MMBF5457LT1/D MMBF5457LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit Forward Transfer Admittance(2) (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) |Yfs| 1000 - 5000 mhos Reverse Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) |yrs| - 10 50 mhos Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Ciss - 4.5 7.0 pF Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Crss - 1.5 3.0 pF SMALL-SIGNAL CHARACTERISTICS 2. Pulse Test: Pulse Width 630 ms, Duty Cycle 10%. TYPICAL CHARACTERISTICS 14 VDS = 15 V VGS = 0 f = 1 kHz NF, NOISE FIGURE (dB) 12 10 8 6 4 2 0 0.001 10 0.01 0.1 1.0 RS, SOURCE RESISTANCE (Megohms) Figure 1. Noise Figure versus Source Resistance VGS(off) -1.2 V 1.2 VGS = 0 V 1.0 -0.2 V 0.8 0.6 -0.4 V 0.4 -0.6 V 0 25 5 10 15 20 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) VGS(off) -1.2 V 1.0 0.8 VDS = 15 V 0.6 0.4 0.2 -0.8 V -1.0 V 0.2 0 I D , DRAIN CURRENT (mA) I D , DRAIN CURRENT (mA) 1.2 0 -1.2 Figure 2. Typical Drain Characteristics -0.8 -0.4 VGS, GATE-SOURCE VOLTAGE (VOLTS) Figure 3. Common Source Transfer Characteristics http://onsemi.com 519 0 MMBF5457LT1 TYPICAL CHARACTERISTICS 5 VGS = 0 V VGS(off) -3.5 V 4 I D , DRAIN CURRENT (mA) I D , DRAIN CURRENT (mA) 5 VGS(off) -3.5 V 3 -1 V 2 -2 V 1 4 3 VDS = 15 V 2 1 -3 V 0 0 5 10 15 20 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 0 -5 25 Figure 4. Typical Drain Characteristics 10 VGS(off) -5.8 V I D , DRAIN CURRENT (mA) I D , DRAIN CURRENT (mA) VGS = 0 V -1 V 6 -2 V 4 -3 V 2 0 -4 V -5 V 0 5 10 15 20 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 0 Figure 5. Common Source Transfer Characteristics 10 8 -3 -2 -1 -4 VGS, GATE-SOURCE VOLTAGE (VOLTS) 25 VGS(off) -5.8 V 8 6 VDS = 15 V 4 2 0 -7 Figure 6. Typical Drain Characteristics -6 -5 -4 -3 -2 VGS, GATE-SOURCE VOLTAGE (VOLTS) -1 Figure 7. Common Source Transfer Characteristics Note: Graphical data is presented for dc conditions. Tabular data is given for pulsed conditions (Pulse Width = 630 ms, Duty Cycle = 10%). Under dc conditions, self heating in higher IDSS units reduces IDSS. http://onsemi.com 520 0 ON Semiconductor JFET - General Purpose Transistor MMBF5460LT1 P-Channel 3 MAXIMUM RATINGS Rating Symbol Value Unit Drain-Gate Voltage VDG 40 Vdc Reverse Gate-Source Voltage VGSR 40 Vdc IGF 10 mAdc Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W TJ, Tstg -55 to +150 C Forward Gate Current 1 2 CASE 318-08, STYLE 10 SOT-23 (TO-236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 TA = 25C Derate above 25C Board(1) Thermal Resistance, Junction to Ambient Junction and Storage Temperature 2 SOURCE 3 GATE 1 DRAIN DEVICE MARKING MMBF5460LT1 = 6E ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit V(BR)GSS 40 -- -- Vdc -- -- -- -- 5.0 1.0 nAdc Adc VGS(off) 0.75 -- 6.0 Vdc VGS 0.5 -- 4.0 Vdc IDSS -1.0 -- -5.0 mAdc Forward Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) |Yfs| 1000 -- 4000 mhos Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) |yos| -- -- 75 mhos Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Ciss -- 5.0 7.0 pF Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Crss -- 1.0 2.0 pF Characteristic OFF CHARACTERISTICS Gate-Source Breakdown Voltage (IG = 10 Adc, VDS = 0) Gate Reverse Current (VGS = 20 Vdc, VDS = 0) (VGS = 20 Vdc, VDS = 0, TA = 100C) IGSS Gate Source Cutoff Voltage (VDS = 15 Vdc, ID = 1.0 Adc) Gate Source Voltage (VDS = 15 Vdc, ID = 0.1 mAdc) ON CHARACTERISTICS Zero-Gate-Voltage Drain Current (VDS = 15 Vdc, VGS = 0) SMALL-SIGNAL CHARACTERISTICS 1. FR-5 = 1.0 0.75 0.062 in. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 521 Publication Order Number: MMBF5460LT1/D MMBF5460LT1 4.0 VDS = 15 V 3.5 I D, DRAIN CURRENT (mA) FORWARD TRANSFER ADMITTANCE versus DRAIN CURRENT 3.0 2.5 TA = -55C 2.0 25C 1.5 125C 1.0 0.5 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VGS, GATE-SOURCE VOLTAGE (VOLTS) 1.8 2.0 Yfs FORWARD TRANSFER ADMITTANCE ( mhos) DRAIN CURRENT versus GATE SOURCE VOLTAGE 4000 3000 2000 1000 700 500 VDS = 15 V f = 1.0 kHz 300 200 0.2 0.3 10 I D, DRAIN CURRENT (mA) VDS = 15 V 8.0 7.0 TA = -55C 6.0 25C 125C 5.0 4.0 3.0 2.0 1.0 0 0.5 1.5 2.0 2.5 3.0 1.0 VGS, GATE-SOURCE VOLTAGE (VOLTS) 3.5 4.0 5000 3000 2000 1000 VDS = 15 V f = 1.0 kHz 700 500 0.5 0.7 12 TA = -55C 10 8.0 25C 125C 6.0 4.0 2.0 0 1.0 2.0 3.0 4.0 5.0 6.0 VGS, GATE-SOURCE VOLTAGE (VOLTS) 2.0 3.0 ID, DRAIN CURRENT (mA) 5.0 7.0 10000 VDS = 15 V 14 1.0 Figure 5. VGS(off) = 4.0 Volts 7.0 Yfs FORWARD TRANSFER ADMITTANCE ( mhos) 16 I D, DRAIN CURRENT (mA) 4.0 7000 Figure 2. VGS(off) = 4.0 Volts 0 3.0 10000 9.0 0 2.0 Figure 4. VGS(off) = 2.0 Volts Yfs FORWARD TRANSFER ADMITTANCE ( mhos) Figure 1. VGS(off) = 2.0 Volts 0.5 0.7 1.0 ID, DRAIN CURRENT (mA) 8.0 7000 5000 3000 2000 1000 VDS = 15 V f = 1.0 kHz 700 500 0.5 0.7 1.0 2.0 3.0 ID, DRAIN CURRENT (mA) 5.0 Figure 6. VGS(off) = 5.0 Volts Figure 3. VGS(off) = 5.0 Volts http://onsemi.com 522 7.0 10 MMBF5460LT1 10 VDS = 15 V f = 1.0 kHz 8.0 IDSS = 3.0 mA 100 70 50 6.0 mA 10 mA 30 C, CAPACITANCE (pF) 200 7.0 6.0 Ciss 5.0 4.0 3.0 2.0 20 10 0.1 f = 1.0 MHz VGS = 0 9.0 300 Coss 1.0 0.2 0.5 1.0 2.0 ID, DRAIN CURRENT (mA) 5.0 0 10 Crss 10 20 30 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 0 Figure 7. Output Resistance versus Drain Current Figure 8. Capacitance versus Drain-Source Voltage 10 9.0 NF, NOISE FIGURE (dB) r oss , OUTPUT RESISTANCE (k ohms) 1000 700 500 VDS = 15 V VGS = 0 f = 100 Hz 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 1.0 10 100 1000 RS, SOURCE RESISTANCE (k Ohms) 10,000 Figure 9. Noise Figure versus Source Resistance vi COMMON SOURCE y PARAMETERS FOR FREQUENCIES BELOW 30 MHz Crss Ciss ross Coss | yfs | vi yis = j Ciss yos = j Cosp * + 1/ross yfs = yfs | yrs = -j Crss *Cosp is Coss in parallel with Series Combination of Ciss and Crss. NOTE: 1. Graphical data is presented for dc conditions. Tabular data is given for pulsed conditions (Pulse Width = 630 ms, Duty Cycle = 10%). Figure 10. Equivalent Low Frequency Circuit http://onsemi.com 523 40 ON Semiconductor JFET Transistor MMBF5484LT1 N-Channel ON Semiconductor Preferred Device MAXIMUM RATINGS 3 Rating Symbol Value Unit VDG 25 Vdc VGS(r) 25 Vdc Forward Gate Current IG(f) 10 mAdc Continuous Device Dissipation at or Below TC = 25C Linear Derating Factor PD 200 2.8 mW mW/C Storage Channel Temperature Range Tstg -65 to +150 C Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W TJ, Tstg -55 to +150 C 1 Drain-Gate Voltage Reverse Gate-Source Voltage Total Device Dissipation FR-5 TA = 25C Derate above 25C Board(1) Thermal Resistance, Junction to Ambient Junction and Storage Temperature CASE 318-08, STYLE 10 SOT-23 (TO-236AB) 2 SOURCE 3 GATE THERMAL CHARACTERISTICS Characteristic 2 1 DRAIN DEVICE MARKING MMBF5484LT1 = 6B ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)GSS -25 -- Vdc -- -- -1.0 -0.2 nAdc Adc VGS(off) -0.3 -3.0 Vdc IDSS 1.0 5.0 mAdc Forward Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) |Yfs| 3000 6000 mhos Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) |yos| -- 50 mhos OFF CHARACTERISTICS Gate-Source Breakdown Voltage (IG = -1.0 Adc, VDS = 0) Gate Reverse Current (VGS = -20 Vdc, VDS = 0) (VGS = -20 Vdc, VDS = 0, TA = 100C) IGSS Gate Source Cutoff Voltage (VDS = 15 Vdc, ID = 10 nAdc) ON CHARACTERISTICS Zero-Gate-Voltage Drain Current (VDS = 15 Vdc, VGS = 0) SMALL-SIGNAL CHARACTERISTICS 1. FR-5 = 1.0 0.75 0.062 in. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 524 Publication Order Number: MMBF5484LT1/D MMBF5484LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Min Max Unit Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Ciss -- 5.0 pF Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 10 MHz) Crss -- 1.0 pF Output Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Coss -- 2.0 pF Characteristic SMALL-SIGNAL CHARACTERISTICS (Continued) COMMON SOURCE CHARACTERISTICS 30 20 bis @ IDSS 10 7.0 5.0 3.0 gis @ IDSS 2.0 gis @ 0.25 IDSS 1.0 0.7 0.5 0.3 10 grs , REVERSE TRANSADMITTANCE (mmhos) brs , REVERSE SUSCEPTANCE (mmhos) gis, INPUT CONDUCTANCE (mmhos) bis, INPUT SUSCEPTANCE (mmhos) ADMITTANCE PARAMETERS (VDS = 15 Vdc, Tchannel = 25C) bis @ 0.25 IDSS 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 5.0 3.0 2.0 0.25 IDSS 0.3 0.2 0.1 0.07 0.05 500 700 1000 brs @ IDSS 1.0 0.7 0.5 grs @ IDSS, 0.25 IDSS 10 20 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 10 10 7.0 5.0 gfs @ IDSS gfs @ 0.25 IDSS 3.0 2.0 1.0 0.7 0.5 0.3 0.2 10 30 Figure 2. Reverse Transfer Admittance (yrs) gos, OUTPUT ADMITTANCE (mhos) bos, OUTPUT SUSCEPTANCE (mhos) gfs, FORWARD TRANSCONDUCTANCE (mmhos) |b fs|, FORWARD SUSCEPTANCE (mmhos) Figure 1. Input Admittance (yis) 20 |bfs| @ IDSS 30 50 70 100 200 300 f, FREQUENCY (MHz) bos @ IDSS and 0.25 IDSS 2.0 1.0 0.5 0.2 gos @ IDSS 0.1 0.05 |bfs| @ 0.25 IDSS 20 5.0 gos @ 0.25 IDSS 0.02 500 700 1000 0.01 10 Figure 3. Forward Transadmittance (yfs) 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 4. Output Admittance (yos) http://onsemi.com 525 MMBF5484LT1 COMMON SOURCE CHARACTERISTICS S-PARAMETERS (VDS = 15 Vdc, Tchannel = 25C, Data Points in MHz) 30 20 10 0 1.0 40 350 340 400 300 0.8 60 ID = IDSS 0.6 90 800 310 50 10 0 350 340 330 0.4 320 700 800 700 300 60 290 70 280 80 900 0.3 ID = IDSS, 0.25 IDSS 310 900 800 0.2 300 700 600 600 500 600 80 40 500 400 0.7 70 320 20 300 200 0.9 30 200 100 50 330 ID = 0.25 IDSS 100 0.1 500 290 400 300 280 0.0 200 270 90 100 260 100 260 110 250 110 250 120 240 120 240 130 230 130 230 140 220 140 220 900 150 160 170 180 190 200 210 150 160 Figure 5. S11s 30 20 10 0 350 340 330 0.6 0.5 60 900 70 80 90 100 110 120 800 700 600 500 0.4 900 800 700 600 500 0.3 100 400 400 0.3 ID = 0.25 IDSS 300 200 0.4 100 0.5 300 ID = IDSS 200 170 180 190 200 210 Figure 6. S12s 40 50 270 100 130 30 20 10 0 350 340 330 100 200 I = 0.25 IDSS D 300 1.0 400 100 200 500 300 600 400 700 0.9 500 800 600 ID = IDSS 700 900 800 900 0.8 320 40 310 50 300 60 290 70 280 80 270 90 270 260 100 260 250 110 250 240 120 240 230 130 230 220 140 220 0.7 320 310 300 290 280 0.6 0.6 140 150 160 170 180 190 200 210 150 Figure 7. S21s 160 170 180 190 Figure 8. S22s http://onsemi.com 526 200 210 MMBF5484LT1 COMMON GATE CHARACTERISTICS ADMITTANCE PARAMETERS (VDG = 15 Vdc, Tchannel = 25C) 10 7.0 5.0 grg , REVERSE TRANSADMITTANCE (mmhos) brg , REVERSE SUSCEPTANCE (mmhos) gig, INPUT CONDUCTANCE (mmhos) big, INPUT SUSCEPTANCE (mmhos) 20 gig @ IDSS 3.0 grg @ 0.25 IDSS 2.0 1.0 0.7 0.5 big @ IDSS 0.3 0.2 10 20 30 big @ 0.25 IDSS 50 70 100 200 300 f, FREQUENCY (MHz) 0.5 0.3 0.1 0.07 0.05 0.25 IDSS 0.03 0.02 0.01 0.007 0.005 500 700 1000 brg @ IDSS 0.2 gig @ IDSS, 0.25 IDSS 10 10 7.0 5.0 gfg @ IDSS 3.0 gfg @ 0.25 IDSS 2.0 1.0 0.7 0.5 bfg @ IDSS 0.3 brg @ 0.25 IDSS 0.2 0.1 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 10. Reverse Transfer Admittance (yrg) gog, OUTPUT ADMITTANCE (mmhos) bog, OUTPUT SUSCEPTANCE (mmhos) gfg , FORWARD TRANSCONDUCTANCE (mmhos) bfg , FORWARD SUSCEPTANCE (mmhos) Figure 9. Input Admittance (yig) 20 500 700 1000 1.0 0.7 0.5 bog @ IDSS, 0.25 IDSS 0.3 0.2 0.1 0.07 0.05 gog @ IDSS 0.03 0.02 0.01 gog @ 0.25 IDSS 10 Figure 11. Forward Transfer Admittance (yfg) 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 12. Output Admittance (yog) http://onsemi.com 527 MMBF5484LT1 COMMON GATE CHARACTERISTICS S-PARAMETERS (VDS = 15 Vdc, Tchannel = 25C, Data Points in MHz) 30 20 10 0 350 340 0.7 40 100 100 200 200 0.5 300 300 60 ID = IDSS 0.4 70 400 700 400 500 310 50 300 60 290 70 280 80 600 900 270 260 100 110 250 110 120 240 120 130 230 130 220 140 170 180 190 20 10 0 350 200 100 600 ID = IDSS 700 300 290 280 0.0 270 500 600 700 800 800 260 ID = 0.25 IDSS 250 0.01 240 0.02 230 900 0.03 220 0.04 150 160 170 180 190 200 210 340 330 Figure 14. S12g 340 330 30 20 10 40 320 0 1.5 1.0 100 100 0.4 320 0.01 140 210 0.5 40 330 0.02 Figure 13. S11g 30 340 310 900 160 350 0.04 90 100 150 0 800 900 90 40 10 600 800 0.3 320 20 0.03 500 700 80 30 ID = 0.25 IDSS 0.6 50 330 350 300 200 400 320 700 600 800 0.9 ID = IDSS 500 900 310 50 300 60 290 70 280 80 270 90 270 260 100 260 110 250 110 250 120 240 120 240 130 230 130 230 140 220 140 220 50 100 0.3 60 0.2 70 80 ID = 0.25 IDSS 0.1 900 90 900 100 150 160 170 180 190 200 210 ID = IDSS, 0.25 IDSS 0.8 Figure 15. S21g 300 0.7 290 280 0.6 150 160 170 180 190 Figure 16. S22g http://onsemi.com 528 310 200 210 ON Semiconductor JFET Chopper MMBFJ175LT1 P-Channel - Depletion ON Semiconductor Preferred Device 3 MAXIMUM RATINGS 1 Rating Symbol Drain-Gate Voltage Reverse Gate-Source Voltage Value Unit VDG 25 V VGS(r) -25 V Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W TJ, Tstg -55 to +150 C 2 CASE 318-08, STYLE 10 SOT-23 (TO-236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 TA = 25C Derate above 25C Board(1) Thermal Resistance Junction to Ambient Junction and Storage Temperature 2 SOURCE 3 GATE 1 DRAIN DEVICE MARKING MMBFJ175LT1 = 6W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Min Max Unit V(BR)GSS 30 - V IGSS - 1.0 nA VGS(OFF) 3.0 6.0 V Zero-Gate-Voltage Drain Current (2) (VGS = 0, VDS = 15 V) IDSS 7.0 60 mA Drain Cutoff Current (VDS = 15 V, VGS = 10 V) ID(off) - 1.0 nA Drain Source On Resistance (ID = 500 A) rDS(on) - 125 Ciss - 11 Crss - 5.5 Characteristic OFF CHARACTERISTICS Gate-Source Breakdown Voltage (VDS = 0, ID = 1.0 A) Gate Reverse Current (VDS = 0 V, VGS = 20 V) Gate-Source Cutoff Voltage (VDS = 15, ID = 10 nA) ON CHARACTERISTICS Input Capacitance Reverse Transfer Capacitance VDS = 0, VGS = 10 V f = 1.0 MHz pF 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 529 Publication Order Number: MMBF175LT1/D ON Semiconductor JFET Chopper MMBFJ177LT1 P-Channel - Depletion 3 1 2 MAXIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Symbol Value Unit VDG 25 Vdc VGS(r) -25 Vdc CASE 318-08, STYLE 10 SOT-23 (TO-236AB) 2 SOURCE THERMAL CHARACTERISTICS Characteristic Board(1) Total Device Dissipation FR-5 TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W TJ, Tstg -55 to +150 C 3 GATE 1 DRAIN DEVICE MARKING MMBFJ177LT1 = 6Y ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)GSS 30 - Vdc Gate Reverse Current (VDS = 0 Vdc, VGS = 20 Vdc) IGSS - 1.0 nAdc Gate Source Cutoff Voltage (VDS = 15 Vdc, ID = 10 nAdc) VGS(off) 0.8 2.5 Vdc Zero-Gate-Voltage Drain Current(2) (VGS = 0, VDS = 15 Vdc) IDSS 1.5 20 mAdc Drain Cutoff Current (VDS = 15 Vdc, VGS = 10 Vdc) ID(off) - 1.0 nAdc rDS(on) - 300 Ciss - 11 pF Crss - 5.5 OFF CHARACTERISTICS Gate-Source Breakdown Voltage (VDS = 0, ID = 1.0 Adc) ON CHARACTERISTICS Drain Source On Resistance (ID = 500 Adc) Input Capacitance Reverse Transfer Capacitance VDS = 0, VGS = 10 Vdc f = 1.0 MHz 1. FR-5 = 1.0 0.75 0.062 in. 2. Pulse Test: Pulse Width < 300 s, Duty Cycle 2%. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 530 Publication Order Number: MMBFJ177LT1/D ON Semiconductor JFET - VHF/UHF Amplifier Transistor MMBFJ309LT1 MMBFJ310LT1 N-Channel 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit Drain-Source Voltage VDS 25 Vdc Gate-Source Voltage VGS 25 Vdc IG 10 mAdc Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W TJ, Tstg -55 to +150 C Gate Current 2 CASE 318-08, STYLE 10 SOT-23 (TO-236AB) 2 SOURCE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 3 GATE 1 DRAIN DEVICE MARKING MMBFJ309LT1 = 6U; MMBFJ310LT1 = 6T ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Min Typ V(BR)GSS -25 - - Vdc IGSS - - - - -1.0 -1.0 nAdc Adc MMBFJ309 MMBFJ310 VGS(off) -1.0 -2.0 - - -4.0 -6.5 Vdc MMBFJ309 MMBFJ310 IDSS 12 24 - - 30 60 mAdc VGS(f) - - 1.0 Vdc Forward Transfer Admittance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) |Yfs| 8.0 - 18 mmhos Output Admittance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) |yos| - - 250 mhos Input Capacitance (VGS = -10 Vdc, VDS = 0 Vdc, f = 1.0 MHz) Ciss - - 5.0 pF Reverse Transfer Capacitance (VGS = -10 Vdc, VDS = 0 Vdc, f = 1.0 MHz) Crss - - 2.5 pF en - 10 - nV Hz Characteristic Max Unit OFF CHARACTERISTICS Gate-Source Breakdown Voltage (IG = -1.0 Adc, VDS = 0) Gate Reverse Current (VGS = -15 Vdc) Gate Reverse Current (VGS = -15 Vdc, TA = 125C) Gate Source Cutoff Voltage (VDS = 10 Vdc, ID = 1.0 nAdc) ON CHARACTERISTICS Zero-Gate-Voltage Drain Current (VDS = 10 Vdc, VGS = 0) Gate-Source Forward Voltage (IG = 1.0 mAdc, VDS = 0) SMALL-SIGNAL CHARACTERISTICS Equivalent Short-Circuit Input Noise Voltage (VDS = 10 Vdc, ID = 10 mAdc, f = 100 Hz) 1. FR-5 = 1.0 0.75 0.062 in. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 531 Publication Order Number: MMBFJ309LT1/D 70 70 I D , DRAIN CURRENT (mA) 60 VDS = 10 V 50 50 +25C IDSS +25C 40 60 TA = -55C 40 30 30 +150C 20 20 +25C -55C 10 -5.0 10 +150C -1.0 -4.0 -3.0 -2.0 ID - VGS, GATE-SOURCE VOLTAGE (VOLTS) IDSS - VGS, GATE-SOURCE CUTOFF VOLTAGE (VOLTS) 0 IDSS, SATURATION DRAIN CURRENT (mA) MMBFJ309LT1 MMBFJ310LT1 0 Figure 1. Drain Current and Transfer Characteristics versus Gate-Source Voltage Yfs Yfs 10 k 100 1.0 k Yos 100 0.01 VGS(off) = -2.3 V = VGS(off) = -5.7 V = 10 1.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 ID, DRAIN CURRENT (mA) 120 10 RDS 96 7.0 72 Cgs 4.0 48 24 Cgd 1.0 0 10 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 VGS, GATE SOURCE VOLTAGE (VOLTS) Figure 2. Common-Source Output Admittance and Forward Transconductance versus Drain Current Figure 3. On Resistance and Junction Capacitance versus Gate-Source Voltage http://onsemi.com 532 0 0 R DS , ON RESISTANCE (OHMS) 1.0 k Yos, OUTPUT ADMITTANCE ( mhos) CAPACITANCE (pF) Yfs , FORWARD TRANSCONDUCTANCE (mhos) 100 k MMBFJ309LT1 MMBFJ310LT1 24 VDS = 10 V ID = 10 mA TA = 25C 0 100 0.79 0.39 1.2 0.73 0.33 0.67 0.27 200 300 500 f, FREQUENCY (MHz) 700 22 30 150 20 140 10 0.036 0.96 0.024 0.94 1000 -40 200 300 500 f, FREQUENCY (MHz) 700 1000 Figure 5. Common-Gate S Parameter Magnitude versus Frequency 11, 12 -20 120 -20 21 0.012 0.92 0.55 0.15 100 12, 22 -20 87 21, 11 180 50 160 VDS = 10 V ID = 10 mA TA = 25C S12 Y12 40 0.048 0.98 0.61 0.21 0.6 Figure 4. Common-Gate Y Parameter Magnitude versus Frequency 170 S22 S11 Y22 6.0 2.4 1.8 Y21 12 3.0 S21 Y11 18 |S12|, |S22| 0.060 1.00 Y12 (mmhos) |Y11|, |Y21 |, |Y22 | (mmhos) 30 |S21|, |S11| 0.85 0.45 86 -40 100 85 -60 80 84 -80 60 83 -100 40 82 -120 20 100 21, 22 0 11 21 22 -20 -60 -80 -40 -100 130 0 100 -120 12 11 -140 VDS = 10 V ID = 10 mA TA = 25C 200 300 500 f, FREQUENCY (MHz) -160 -180 700 -200 1000 Figure 6. Common-Gate Y Parameter Phase-Angle versus Frequency 21 12 VDS = 10 V ID = 10 mA TA = 25C 200 300 500 f, FREQUENCY (MHz) 11 700 -60 -80 -100 1000 Figure 7. S Parameter Phase-Angle versus Frequency http://onsemi.com 533 0.90 ON Semiconductor JFET Transistor MMBFU310LT1 N-Channel ON Semiconductor Preferred Device MAXIMUM RATINGS 3 Rating Symbol Value Unit Drain-Source Voltage VDS 25 Vdc Gate-Source Voltage VGS 25 Vdc IG 10 mAdc Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W TJ, Tstg -55 to +150 C Gate Current 1 2 CASE 318-08, STYLE 10 SOT-23 (TO-236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 TA = 25C Derate above 25C Board(1) Thermal Resistance, Junction to Ambient Junction and Storage Temperature 2 SOURCE 3 GATE 1 DRAIN DEVICE MARKING MMBFU310LT1 = 6C ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Gate-Source Breakdown Voltage (IG = -1.0 Adc, VDS = 0) V(BR)GSS -25 - Vdc Gate 1 Leakage Current (VGS = -15 Vdc, VDS = 0) IG1SS - -150 pA Gate 2 Leakage Current (VGS = -15 Vdc, VDS = 0, TA = 125C) IG2SS - -150 nAdc VGS(off) -2.5 -6.0 Vdc IDSS 24 60 mAdc VGS(f) - 1.0 Vdc Forward Transfer Admittance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) |Yfs| 10 18 mmhos Output Admittance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) |yos| - 250 mhos Input Capacitance (VGS = -10 Vdc, VDS = 0 Vdc, f = 1.0 MHz) Ciss - 5.0 pF Reverse Transfer Capacitance (VGS = -10 Vdc, VDS = 0 Vdc, f = 1.0 MHz) Crss - 2.5 pF Gate Source Cutoff Voltage (VDS = 10 Vdc, ID = 1.0 nAdc) ON CHARACTERISTICS Zero-Gate-Voltage Drain Current (VDS = 10 Vdc, VGS = 0) Gate-Source Forward Voltage (IG = 10 mAdc, VDS = 0) SMALL-SIGNAL CHARACTERISTICS 1. FR-5 = 1.0 0.75 0.062 in. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 534 Publication Order Number: MMBFU310LT1/D VDS = 10 V 50 50 +25C IDSS +25C 40 60 TA = -55C 40 30 30 +150C 20 20 +25C -55C 10 -5.0 10 +150C -1.0 -4.0 -3.0 -2.0 ID - VGS, GATE-SOURCE VOLTAGE (VOLTS) IDSS - VGS, GATE-SOURCE CUTOFF VOLTAGE (VOLTS) 0 0 35 30 25 +150C 15 10 +150C 5.0 0 5.0 4.0 100 0.01 0 10 120 RDS CAPACITANCE (pF) Yos, OUTPUT ADMITTANCE ( mhos) Yfs , FORWARD TRANSCONDUCTANCE (mhos) Yos VGS(off) = -2.3 V = VGS(off) = -5.7 V = 1.0 2.0 10 100 1.0 k 3.0 Figure 2. Forward Transconductance versus Gate-Source Voltage Yfs 10 k +25C -55C VGS, GATE-SOURCE VOLTAGE (VOLTS) 1.0 k Yfs +25C 20 Figure 1. Drain Current and Transfer Characteristics versus Gate-Source Voltage 100 k TA = -55C VDS = 10 V f = 1.0 MHz 7.0 72 Cgs 4.0 48 24 Cgd 1.0 0 10 1.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 ID, DRAIN CURRENT (mA) 96 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 VGS, GATE SOURCE VOLTAGE (VOLTS) Figure 3. Common-Source Output Admittance and Forward Transconductance versus Drain Current Figure 4. On Resistance and Junction Capacitance versus Gate-Source Voltage http://onsemi.com 535 0 0 R DS , ON RESISTANCE (OHMS) I D , DRAIN CURRENT (mA) 60 Yfs , FORWARD TRANSCONDUCTANCE (mmhos) 70 70 IDSS, SATURATION DRAIN CURRENT (mA) MMBFU310LT1 MMBFU310LT1 24 VDS = 10 V ID = 10 mA TA = 25C 0 100 0.79 0.39 1.2 0.73 0.33 0.67 0.27 200 300 500 f, FREQUENCY (MHz) 700 22 30 150 20 140 10 0.036 0.96 0.024 0.94 1000 -40 200 300 500 f, FREQUENCY (MHz) 700 1000 Figure 6. Common-Gate S Parameter Magnitude versus Frequency 11, 12 -20 120 -20 21 0.012 0.92 0.55 0.15 100 12, 22 -20 87 21, 11 180 50 160 VDS = 10 V ID = 10 mA TA = 25C S12 Y12 40 0.048 0.98 0.61 0.21 0.6 Figure 5. Common-Gate Y Parameter Magnitude versus Frequency 170 S22 S11 Y22 6.0 2.4 1.8 Y21 12 3.0 S21 Y11 18 |S12|, |S22| 0.060 1.00 Y12 (mmhos) |Y11|, |Y21 |, |Y22 | (mmhos) 30 |S21|, |S11| 0.85 0.45 86 -40 100 85 -60 80 84 -80 60 83 -100 40 82 -120 20 100 21, 22 0 11 21 22 -20 -60 -80 -40 -100 130 0 100 -120 12 11 -140 VDS = 10 V ID = 10 mA TA = 25C 200 300 500 f, FREQUENCY (MHz) -160 -180 700 -200 1000 Figure 7. Common-Gate Y Parameter Phase-Angle versus Frequency 21 12 VDS = 10 V ID = 10 mA TA = 25C 200 300 500 f, FREQUENCY (MHz) 11 700 -60 -80 -100 1000 Figure 8. S Parameter Phase-Angle versus Frequency http://onsemi.com 536 0.90 ON Semiconductor MMBT2131T1 MMBT2131T3 General Purpose Transistors PNP Bipolar Junction Transistor (Complementary NPN Device: MMBT2132T1/T3) NOTE: Voltage and Current are negative for the PNP Transistor. 0.7 AMPERES 30 VOLTS - V(BR)CEO 342 mW MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter Voltage VCEO 30 V Collector-Base Voltage VCBO 40 V Emitter-Base Voltage VEBO 5.0 V Collector Current IC 700 mA Base Current IB 350 mA Total Power Dissipation @ TC = 25C Total Power Dissipation @ TC = 85C Thermal Resistance - Junction to Ambient (1) PD PD RJA 342 178 366 mW mW C/W Total Power Dissipation @ TC = 25C Total Power Dissipation @ TC = 85C Thermal Resistance - Junction to Ambient (2) PD PD RJA 665 346 188 mW mW C/W TJ, Tstg -55 to +150 C Operating and Storage Temperature Range 4 6 5 1 2 3 CASE 318F-02, STYLE 2 SC-59 - 6 Lead COLLECTOR PINS 2, 5 BASE PIN 6 PNP EMITTER PIN 3 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Base Breakdown Voltage (IC = 100 Adc) V(BR)CBO 40 - - Vdc Collector-Emitter Breakdown Voltage (IC = 10 mAdc) V(BR)CEO 30 - - Vdc Emitter-Base Breakdown Voltage (IE = 100 Adc) V(BR)EBO 5.0 - - Vdc (VCB = 25 Vdc, IE = 0 Adc) (VCB = 25 Vdc, IE = 0 Adc, TA = 125C) ICBO - - - - 1.0 10 Adc (VEB = 5.0 Vdc, IC = 0 Adc) IEBO - - 10 Adc (VCE = 3.0 Vdc, IC = 100 mAdc) hFE 150 - - Vdc Collector-Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) VCE(sat) - - 0.25 Vdc Collector-Emitter Saturation Voltage (IC = 700 mAdc, IB = 70 mAdc) VCE(sat) - - 0.4 Vdc Base-Emitter Saturation Voltage (IC = 700 mAdc, IB = 70 mAdc) VBE(sat) - - 1.1 Vdc (IC = 700 mAdc, VCE = 1.0 Vdc) VBE(on) - - 1.0 Vdc Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS DC Current Gain Collector-Emitter Saturation Voltage 1. Minimum FR-4 or G-10 PCB, Operating to Steady State. 2. Mounted onto a 2 square FR-4 Board (1 sq. 2 oz Cu 0.06 thick single sided), Operating to Steady State. Semiconductor Components Industries, LLC, 2001 June, 2001 - Rev. 1 537 Publication Order Number: MMBT2131T1/D 0.5 VCE(sat) , COLLECTOR-EMITTER VOLTAGE (V) VCE(sat) , COLLECTOR-EMITTER VOLTAGE (V) MMBT2131T1 MMBT2131T3 0.4 0.3 0.7 A 0.2 0.5 A 0.1 0 10 mA IC = 1.0 mA 0.000001 0.00001 0.1 A 0.0001 0.001 0.1 0.01 0.2 0.5 A 0.15 0.1 0.1 A 10 mA 0.05 IC = 1.0 mA 0 0.000001 0.00001 0.0001 0.001 0.01 IB, BASE CURRENT (A) IB, BASE CURRENT (A) Figure 1. Collector Saturation Region Figure 2. Collector Saturation Region 1.0 1000 VBE(sat) VOLTAGE (V) h FE , DC CURRENT GAIN VCE = 3.0 V 150C 25C 0.1 -40C VCE(sat) 100 0.01 0.01 1.0 0.1 0.01 0.001 0.1 IC, COLLECTOR CURRENT (A) Figure 3. DC Current Gain Figure 4. "ON" Voltages 0.16 VCE(sat) , VOLTAGE (V) VCE(sat) IC/IB = 100 0.01 25C IC/IB = 10 0.1 0.001 1.0 T = 85C VBE(sat) 0.01 IC/IB = 10 IC, COLLECTOR CURRENT (A) 1.0 VOLTAGE (V) 0.1 0.1 1.0 0.12 0C 0.08 0.04 0 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 5. "ON" Voltages Figure 6. Collector-Emitter Saturation Voltage http://onsemi.com 538 1.0 MMBT2131T1 MMBT2131T3 0.6 1.0 T = 85C IC/IB = 100 -40C 25C VBE(on) , VOLTAGE (V) VCE(sat) , VOLTAGE (V) 0.5 0C 0.4 0.3 0.2 0.75 25C 0.5 150C 0.25 0.1 TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0 VCE = 1.0 V 0.1 0 1.0 0.0001 0.001 0.1 0.01 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 7. Collector-Emitter Saturation Voltage Figure 8. VBE(on) Voltage 1.0 1.0 0.5 0.2 0.1 0.1 P(pk) 0.05 t1 0.02 0.01 t2 DUTY CYCLE, D = t1/t2 0.01 0.0001 0.001 0.1 0.01 1.0 TIME (sec) Figure 9. Thermal Response Curve http://onsemi.com 539 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN569) ZJA(t) = r(t) RJA TJ(pk) - TA = P(pk) ZJA(t) 10 100 ON Semiconductor MMBT2132T1 MMBT2132T3 General Purpose Transistors NPN Bipolar Junction Transistor 0.7 AMPERES 30 VOLTS - V(BR)CEO 342 mW (Complementary PNP Device: MMBT2131T1/T3) MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating 6 Symbol Value Unit Collector-Emitter Voltage VCEO 30 V Collector-Base Voltage VCBO 40 V Emitter-Base Voltage VEBO 5.0 V Collector Current IC 700 mA Base Current IB 350 mA Total Power Dissipation @ TC = 25C Total Power Dissipation @ TC = 85C Thermal Resistance - Junction to Ambient (1) PD PD RJA 342 178 366 mW mW C/W Total Power Dissipation @ TC = 25C Total Power Dissipation @ TC = 85C Thermal Resistance - Junction to Ambient (2) PD PD RJA 665 346 188 mW mW C/W TJ, Tstg -55 to +150 C Operating and Storage Temperature Range 54 1 2 3 CASE 318F-03, STYLE 2 SC-59 - 6 Lead COLLECTOR PINS 2, 5 BASE PIN 6 NPN EMITTER PIN 3 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Base Breakdown Voltage (IC = 100 Adc) V(BR)CBO 40 - - Vdc Collector-Emitter Breakdown Voltage (IC = 10 mAdc) V(BR)CEO 30 - - Vdc Emitter-Base Breakdown Voltage (IE = 100 Adc) V(BR)EBO 5.0 - - Vdc (VCB = 25 Vdc, IE = 0 Adc) (VCB = 25 Vdc, IE = 0 Adc, TA = 125C) ICBO - - - - 1.0 10 Adc (VEB = 5.0 Vdc, IC = 0 Adc) IEBO - - 10 Adc (VCE = 3.0 Vdc, IC = 100 mAdc) hFE 150 - - Vdc Collector-Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) VCE(sat) - - 0.25 Vdc Collector-Emitter Saturation Voltage (IC = 700 mAdc, IB = 70 mAdc) VCE(sat) - - 0.4 Vdc Base-Emitter Saturation Voltage (IC = 700 mAdc, IB = 70 mAdc) VBE(sat) - - 1.1 Vdc (IC = 700 mAdc, VCE = 1.0 Vdc) VBE(on) - - 1.0 Vdc Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS DC Current Gain Collector-Emitter Saturation Voltage 1. Minimum FR-4 or G-10 PCB, Operating to Steady State. 2. Mounted onto a 2 square FR-4 Board (1 sq. 2 oz Cu 0.06 thick single sided), Operating to Steady State. Semiconductor Components Industries, LLC, 2001 June, 2001 - Rev. 1 540 Publication Order Number: MMBT2132T1/D 0.3 VCE(sat) , COLLECTOR-EMITTER VOLTAGE (V) VCE(sat) , COLLECTOR-EMITTER VOLTAGE (V) MMBT2132T1 MMBT2132T3 0.7 A 0.2 0.5 A 0.1 0.1 A 10 mA 0 IC = 1.0 mA 0.000001 0.00001 0.0001 0.001 0.01 0.1 0.1 0.1 A 10 mA IC = 1.0 mA 0 0.000001 0.00001 0.0001 IB, BASE CURRENT (A) Figure 1. Collector Saturation Region Figure 2. Collector Saturation Region VBE(sat) h FE , DC CURRENT GAIN VOLTAGE (V) 25C 150C 0.1 0.01 VCE(sat) -40C 0.1 0.01 0.001 1.0 IC/IB = 10 0.001 0.1 0.01 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 3. DC Current Gain Figure 4. "ON" Voltages 1.0 1.0 0.16 VBE(sat) IC/IB = 10 VCE(sat) , VOLTAGE (V) VOLTAGE (V) 0.1 1.0 VCE = 3.0 V 0.1 VCE(sat) 0.01 0.01 IB, BASE CURRENT (A) 1000 100 0.001 IC/IB = 100 0.001 0.01 0.1 1.0 T = 85C 0.12 25C 0C 0.08 0.04 0 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 5. "ON" Voltages Figure 6. Collector-Emitter Saturation Voltage http://onsemi.com 541 1.0 MMBT2132T1 MMBT2132T3 0.2 IC/IB = 100 -40C 25C 0.15 VBE(on) , VOLTAGE (V) VCE(sat) , VOLTAGE (V) 1.0 0C T = 85C 0.1 0.05 0.75 25C 150C 0.5 0.25 VCE = 1.0 V TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0 0.01 0.1 0 1.0 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 7. Collector-Emitter Saturation Voltage Figure 8. VBE(on) Voltage 1.0 1.0 0.5 0.2 0.1 0.1 P(pk) 0.05 t1 0.02 0.01 t2 DUTY CYCLE, D = t1/t2 0.01 0.0001 0.001 0.01 0.1 1.0 TIME (sec) Figure 9. Thermal Response Curve http://onsemi.com 542 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN569) ZJA(t) = r(t) RJA TJ(pk) - TA = P(pk) ZJA(t) 10 100 MMBT2222ATT1 Preferred Device General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT-416/SC-75 package which is designed for low power surface mount applications. http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS (TA = 25C) Symbol Max Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 75 Vdc Emitter-Base Voltage VEBO 6.0 Vdc IC 600 mAdc Symbol Max Unit PD 150 mW RJA 833 C/W TJ, Tstg -55 to +150 C Rating Collector Current - Continuous 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation, (1) TA = 25C Thermal Resistance, Junction to Ambient Operating and Storage Junction Temperature Range 3 2 1 CASE 463 SOT-416/SC-75 STYLE 1 (1) Device mounted on FR-4 glass epoxy printed circuit board using the minimum recommended footpad. DEVICE MARKING 1P ORDERING INFORMATION Device Package Shipping MMBT2222ATT1 SOT-416 3000 / Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 April, 2000 - Rev. 1 543 Publication Order Number: MMBT2222ATT1/D MMBT2222ATT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 -- Vdc Collector-Base Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO 75 -- Vdc Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO 6.0 -- Vdc Base Cutoff Current (VCE = 60 Vdc, VEB = 3.0 Vdc) IBL -- 20 nAdc Collector Cutoff Current (VCE = 60 Vdc, VEB = 3.0 Vdc) ICEX -- 10 nAdc 35 50 75 100 40 -- -- -- -- -- -- -- 0.3 1.0 0.6 -- 1.2 2.0 fT 300 -- MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo -- 8.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo -- 30 pF Input Impedance (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) hie 0.25 1.25 k ohms Voltage Feedback Ratio (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) hre -- 4.0 X 10-4 Small-Signal Current Gain (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) hfe 75 375 -- Output Admittance (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) hoe 25 200 mhos Noise Figure (VCE = 10 Vdc, IC = 100 Adc, RS = 1.0 k ohms, f = 1.0 kHz) NF -- 4.0 dB (VCC = 3.0 Vdc, VBE = -0.5 0.5 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) td -- 10 tr -- 25 (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) ts -- 225 tf -- 60 OFF CHARACTERISTICS ON CHARACTERISTICS(1) DC Current Gain (1) (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 150 mAdc, VCE = 10 Vdc) (IC = 500 mAdc, VCE = 10 Vdc) HFE Collector-Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VCE(sat) Base-Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VBE(sat) -- Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. http://onsemi.com 544 ns ns MMBT2222ATT1 SWITCHING TIME EQUIVALENT TEST CIRCUITS +30 V +30 V 1.0 to 100 s, DUTY CYCLE 2.0% +16 V 200 0 0 -2 V 1 k < 2 ns 1.0 to 100 s, DUTY CYCLE 2.0% +16 V CS* < 10 pF -14 V < 20 ns 200 1k CS* < 10 pF 1N914 -4 V Scope rise time < 4 ns *Total shunt capacitance of test jig, connectors, and oscilloscope. Figure 1. Turn-On Time Figure 2. Turn-Off Time hFE , DC CURRENT GAIN 1000 700 500 300 200 100 70 50 30 20 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA) 30 50 70 100 200 5.0 10 300 500 700 1.0 k VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. DC Current Gain 1.0 0.8 0.6 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 IB, BASE CURRENT (mA) 2.0 Figure 4. Collector Saturation Region http://onsemi.com 545 3.0 20 30 50 MMBT2222ATT1 200 100 70 50 tr @ VCC = 30 V td @ VEB(off) = 2.0 V td @ VEB(off) = 0 30 20 10 7.0 5.0 200 ts = ts - 1/8 tf 100 70 50 tf 30 20 10 7.0 5.0 3.0 2.0 5.0 7.0 10 200 300 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 500 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) Figure 5. Turn-On Time 6.0 500 f = 1.0 kHz 8.0 4.0 2.0 IC = 50 A 100 A 500 A 1.0 mA 6.0 4.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) Figure 7. Frequency Effects Figure 8. Source Resistance Effects Ceb 10 7.0 5.0 Ccb 3.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE VOLTAGE (VOLTS) 20 30 50 f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) f, FREQUENCY (kHz) 20 0.2 0.3 0 50 50 100 20 30 CAPACITANCE (pF) 300 10 RS = OPTIMUM RS = SOURCE RS = RESISTANCE IC = 1.0 mA, RS = 150 500 A, RS = 200 100 A, RS = 2.0 k 50 A, RS = 4.0 k 8.0 200 Figure 6. Turn-Off Time NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 10 2.0 0.1 VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25C 300 t, TIME (ns) t, TIME (ns) 500 IC/IB = 10 TJ = 25C 500 VCE = 20 V TJ = 25C 300 200 100 70 50 1.0 Figure 9. Capacitances 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 10. Current-Gain Bandwidth Product http://onsemi.com 546 MMBT2222ATT1 1.0 +0.5 TJ = 25C 0 VBE(sat) @ IC/IB = 10 0.6 COEFFICIENT (mV/ C) V, VOLTAGE (VOLTS) 0.8 1.0 V VBE(on) @ VCE = 10 V 0.4 0.2 0 RVC for VCE(sat) -0.5 -1.0 -1.5 RVB for VBE -2.0 VCE(sat) @ IC/IB = 10 0.1 0.2 50 100 200 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 500 1.0 k -2.5 0.1 0.2 Figure 11. "On" Voltages 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) Figure 12. Temperature Coefficients http://onsemi.com 547 500 MMBT2222AWT1 Preferred Device General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT-323/SC-70 package which is designed for low power surface mount applications. http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 75 Vdc Emitter-Base Voltage VEBO 6.0 Vdc IC 600 mAdc Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board TA = 25C PD 150 mW Collector Current - Continuous COLLECTOR 3 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Thermal Resistance Junction to Ambient Junction and Storage Temperature 3 RJA 833 C/W TJ, Tstg -55 to +150 C 1 2 SC-70 CASE 419 STYLE 3 MARKING DIAGRAM P1 M P1 = Specific Device Code M = Date Code ORDERING INFORMATION Device Package Shipping MMBT2222AWT1 SC-70 3000/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 July, 2001 - Rev. 2 548 Publication Order Number: MMBT2222AWT1/D MMBT2222AWT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage (Note 1.) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 - Vdc Collector-Base Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO 75 - Vdc Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO 6.0 - Vdc Base Cutoff Current (VCE = 60 Vdc, VEB = 3.0 Vdc) IBL - 20 nAdc Collector Cutoff Current (VCE = 60 Vdc, VEB = 3.0 Vdc) ICEX - 10 nAdc 35 50 75 100 40 - - - 300 - - - 0.3 1.0 0.6 - 1.2 2.0 fT 300 - MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo - 8.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo - 30 pF Input Impedance (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) hie 0.25 1.25 k ohms Voltage Feedback Ratio (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) hre - 4.0 X 10-4 Small-Signal Current Gain (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) hfe 75 375 - Output Admittance (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) hoe 25 200 mhos Noise Figure (VCE = 10 Vdc, IC = 100 Adc, RS = 1.0 k, f = 1.0 kHz) NF - 4.0 dB (VCC = 3.0 Vdc, VBE = -0.5 0.5 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) td - 10 tr - 25 (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) ts - 225 tf - 60 OFF CHARACTERISTICS ON CHARACTERISTICS (Note 1.) HFE DC Current Gain (Note 1.) (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 150 mAdc, VCE = 10 Vdc) (IC = 500 mAdc, VCE = 10 Vdc) Collector-Emitter Saturation Voltage (Note 1.) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VCE(sat) Base-Emitter Saturation Voltage (Note 1.) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VBE(sat) - Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. http://onsemi.com 549 ns ns MMBT2222AWT1 SWITCHING TIME EQUIVALENT TEST CIRCUITS +30 V +30 V 1.0 to 100 s, DUTY CYCLE 2.0% +16 V 200 +16 V 0 0 -2 V 1 k < 2 ns CS* < 10 pF 1.0 to 100 s, DUTY CYCLE 2.0% -14 V < 20 ns 200 1k CS* < 10 pF 1N914 -4 V Scope rise time < 4 ns *Total shunt capacitance of test jig, connectors, and oscilloscope. Figure 1. Turn-On Time Figure 2. Turn-Off Time hFE , DC CURRENT GAIN 1000 700 500 300 200 100 70 50 30 20 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 200 5.0 10 300 500 700 1.0 k VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. DC Current Gain 1.0 0.8 0.6 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 IB, BASE CURRENT (mA) 2.0 Figure 4. Collector Saturation Region http://onsemi.com 550 3.0 20 30 50 MMBT2222AWT1 200 100 70 50 tr @ VCC = 30 V td @ VEB(off) = 2.0 V td @ VEB(off) = 0 30 20 10 7.0 5.0 200 ts = ts - 1/8 tf 100 70 50 tf 30 20 10 7.0 5.0 3.0 2.0 5.0 7.0 10 200 300 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 500 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) Figure 5. Turn-On Time 6.0 500 f = 1.0 kHz 8.0 4.0 2.0 IC = 50 A 100 A 500 A 1.0 mA 6.0 4.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) Figure 7. Frequency Effects Figure 8. Source Resistance Effects Ceb 10 7.0 5.0 Ccb 3.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE VOLTAGE (VOLTS) 20 30 50 f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) f, FREQUENCY (kHz) 20 0.2 0.3 0 50 50 100 20 30 CAPACITANCE (pF) 300 10 RS = OPTIMUM RS = SOURCE RS = RESISTANCE IC = 1.0 mA, RS = 150 500 A, RS = 200 100 A, RS = 2.0 k 50 A, RS = 4.0 k 8.0 200 Figure 6. Turn-Off Time NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 10 2.0 0.1 VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25C 300 t, TIME (ns) t, TIME (ns) 500 IC/IB = 10 TJ = 25C Figure 9. Capacitances 500 VCE = 20 V TJ = 25C 300 200 100 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 10. Current-Gain Bandwidth Product http://onsemi.com 551 MMBT2222AWT1 1.0 +0.5 TJ = 25C 0 VBE(sat) @ IC/IB = 10 0.6 COEFFICIENT (mV/ C) V, VOLTAGE (VOLTS) 0.8 1.0 V VBE(on) @ VCE = 10 V 0.4 0.2 0 RVC for VCE(sat) -0.5 -1.0 -1.5 RVB for VBE -2.0 VCE(sat) @ IC/IB = 10 0.1 0.2 50 100 200 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 500 1.0 k -2.5 0.1 0.2 Figure 11. "On" Voltages 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) Figure 12. Temperature Coefficients http://onsemi.com 552 500 MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 is a Preferred Device General Purpose Transistors NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage MMBT2222LT1 MMBT2222ALT1 VCEO Collector-Base Voltage MMBT2222LT1 MMBT2222ALT1 VCBO Emitter-Base Voltage MMBT2222LT1 MMBT2222ALT1 VEBO Value COLLECTOR 3 Unit Vdc 30 40 1 BASE Vdc 60 75 2 EMITTER Vdc 5.0 6.0 3 Collector Current - Continuous IC 600 mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board (Note 1) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate (Note 2) TA = 25C Derate above 25C 1 Symbol Max Unit 2 PD 225 mW SOT-23 CASE 318 STYLE 6 1.8 mW/C RJA 556 C/W PD 300 mW 2.4 mW/C MARKING DIAGRAM xxx M Thermal Resistance Junction to Ambient RJA 417 C/W Junction and Storage Temperature Range TJ, Tstg -55 to +150 C 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. xxx = Specific Device Code = (M1B = MMBT2222LT1, = 1P = MMBT2222ALT1) M = Date Code ORDERING INFORMATION Device Package Shipping MMBT2222LT1 SOT-23 3000/Tape & Reel MMBT2222ALT1 SOT-23 3000/Tape & Reel MMBT2222LT3 SOT-23 10,000/Tape & Reel MMBT2222ALT3 SOT-23 10,000/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 July, 2001 - Rev. 2 553 Publication Order Number: MMBT2222LT1/D MMBT2222LT1, MMBT2222ALT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) MMBT2222 MMBT2222A V(BR)CEO 30 40 - - Vdc Collector-Base Breakdown Voltage (IC = 10 Adc, IE = 0) MMBT2222 MMBT2222A V(BR)CBO 60 75 - - Vdc Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) MMBT2222 MMBT2222A V(BR)EBO 5.0 6.0 - - Vdc Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) MMBT2222A ICEX - 10 nAdc Collector Cutoff Current (VCB = 50 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) (VCB = 50 Vdc, IE = 0, TA = 125C) (VCB = 60 Vdc, IE = 0, TA = 125C) MMBT2222 MMBT2222A MMBT2222 MMBT2222A ICBO - - - - 0.01 0.01 10 10 Adc Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) MMBT2222A IEBO - 100 nAdc Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) MMBT2222A IBL - 20 nAdc 35 50 75 35 100 50 30 40 - - - - 300 - - - MMBT2222 MMBT2222A - - 0.4 0.3 MMBT2222 MMBT2222A - - 1.6 1.0 MMBT2222 MMBT2222A - 0.6 1.3 1.2 MMBT2222 MMBT2222A - - 2.6 2.0 ON CHARACTERISTICS DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc, TA = -55C) (IC = 150 mAdc, VCE = 10 Vdc) (Note 2.) (IC = 150 mAdc, VCE = 1.0 Vdc) (Note 2.) (IC = 500 mAdc, VCE = 10 Vdc) (Note 2.) hFE MMBT2222A only MMBT2222 MMBT2222A Collector-Emitter Saturation Voltage (Note 2.) (IC = 150 mAdc, IB = 15 mAdc) - VCE(sat) (IC = 500 mAdc, IB = 50 mAdc) Base-Emitter Saturation Voltage (Note 2.) (IC = 150 mAdc, IB = 15 mAdc) Vdc VBE(sat) (IC = 500 mAdc, IB = 50 mAdc) 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. http://onsemi.com 554 Vdc MMBT2222LT1, MMBT2222ALT1 SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (Note 3.) (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) fT MHz MMBT2222 MMBT2222A Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) 250 300 - - - 8.0 - - 30 25 2.0 0.25 8.0 1.25 - - 8.0 4.0 50 75 300 375 5.0 25 35 200 - 150 - 4.0 Cobo Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) pF Cibo pF MMBT2222 MMBT2222A Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A MMBT2222A hie Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A MMBT2222A Small-Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A MMBT2222A Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A MMBT2222A Collector Base Time Constant (IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz) MMBT2222A Noise Figure (IC = 100 Adc, VCE = 10 Vdc, RS = 1.0 k, f = 1.0 kHz) MMBT2222A k X 10-4 hre hfe - mhos hoe rb, Cc ps NF dB SWITCHING CHARACTERISTICS (MMBT2222A only) Delay Time Rise Time Storage Time Fall Time (VCC = 30 Vdc, VBE(off) = -0.5 0.5 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) td - 10 tr - 25 (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) ts - 225 tf - 60 ns ns 3. fT is defined as the frequency at which |hfe| extrapolates to unity. SWITCHING TIME EQUIVALENT TEST CIRCUITS +30 V +30 V 1.0 to 100 s, DUTY CYCLE 2.0% +16 V 0 -2 V 200 +16 V 0 < 2 ns 1 k CS* < 10 pF -14 V 1.0 to 100 s, DUTY CYCLE 2.0% < 20 ns 1k 1N914 -4 V Scope rise time < 4 ns *Total shunt capacitance of test jig, connectors, and oscilloscope. Figure 1. Turn-On Time Figure 2. Turn-Off Time http://onsemi.com 555 200 CS* < 10 pF MMBT2222LT1, MMBT2222ALT1 hFE , DC CURRENT GAIN 1000 700 500 300 200 100 70 50 30 20 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 200 5.0 10 300 500 700 1.0 k VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. DC Current Gain 1.0 0.8 0.6 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 IB, BASE CURRENT (mA) 2.0 Figure 4. Collector Saturation Region http://onsemi.com 556 3.0 20 30 50 MMBT2222LT1, MMBT2222ALT1 200 100 70 50 tr @ VCC = 30 V td @ VEB(off) = 2.0 V td @ VEB(off) = 0 30 20 10 7.0 5.0 200 ts = ts - 1/8 tf 100 70 50 tf 30 20 10 7.0 5.0 3.0 2.0 5.0 7.0 10 200 300 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 500 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) Figure 5. Turn-On Time 6.0 500 f = 1.0 kHz 8.0 4.0 2.0 IC = 50 A 100 A 500 A 1.0 mA 6.0 4.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) Figure 7. Frequency Effects Figure 8. Source Resistance Effects Ceb 10 7.0 5.0 Ccb 3.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE VOLTAGE (VOLTS) 20 30 50 f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) f, FREQUENCY (kHz) 20 0.2 0.3 0 50 50 100 20 30 CAPACITANCE (pF) 300 10 RS = OPTIMUM RS = SOURCE RS = RESISTANCE IC = 1.0 mA, RS = 150 500 A, RS = 200 100 A, RS = 2.0 k 50 A, RS = 4.0 k 8.0 200 Figure 6. Turn-Off Time NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 10 2.0 0.1 VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25C 300 t, TIME (ns) t, TIME (ns) 500 IC/IB = 10 TJ = 25C Figure 9. Capacitances 500 VCE = 20 V TJ = 25C 300 200 100 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 10. Current-Gain Bandwidth Product http://onsemi.com 557 MMBT2222LT1, MMBT2222ALT1 1.0 +0.5 TJ = 25C 0 VBE(sat) @ IC/IB = 10 0.6 COEFFICIENT (mV/ C) V, VOLTAGE (VOLTS) 0.8 1.0 V VBE(on) @ VCE = 10 V 0.4 0.2 0 RVC for VCE(sat) -0.5 -1.0 -1.5 RVB for VBE -2.0 VCE(sat) @ IC/IB = 10 0.1 0.2 50 100 200 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 500 1.0 k -2.5 0.1 0.2 Figure 11. "On" Voltages 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) Figure 12. Temperature Coefficients http://onsemi.com 558 500 ON Semiconductor Low Noise Transistor MMBT2484LT1 NPN Silicon 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector-Emitter Voltage VCEO 60 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 6.0 Vdc IC 100 mAdc Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W PD 300 mW 2.4 mW/C RJA 417 C/W TJ, Tstg -55 to +150 C Collector Current -- Continuous 2 CASE 318-08, STYLE 6 SOT-23 (TO-236) COLLECTOR 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 TA = 25C Derate above 25C Board(1) Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 1 BASE 2 EMITTER DEVICE MARKING MMBT2484LT1 = 1U ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max 60 -- 60 -- 5.0 -- -- -- 10 10 -- 10 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO Collector-Base Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 45 Vdc, IE = 0) (VCB = 45 Vdc, IE = 0, TA = 150C) ICBO Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) IEBO Vdc Vdc Vdc nAdc Adc nAdc 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. Semiconductor Components Industries, LLC, 2001 October, 2001 - Rev. 2 559 Publication Order Number: MMBT2484LT1/D MMBT2484LT1 ELECTRICAL CHARACTERISTICS (continued) (TA = 25C unless otherwise noted) Symbol Characteristic Min Max 250 -- -- 800 -- 0.35 -- 0.95 -- 6.0 -- 6.0 -- 3.0 Unit ON CHARACTERISTICS DC Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) hFE Collector-Emitter Saturation Voltage (IC = 1.0 mAdc, IB = 0.1 mAdc) VCE(sat) Base-Emitter On Voltage (IC = 1.0 mAdc, VCE = 5.0 Vdc) VBE(on) -- Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo Noise Figure (IC = 10 Adc, VCE = 5.0 Vdc, RS = 10 k, f = 1.0 kHz, BW = 200 Hz) NF RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model http://onsemi.com 560 pF pF dB MMBT2484LT1 NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25C) NOISE VOLTAGE 30 IC = 10 mA BANDWIDTH = 1.0 Hz 20 RS 0 en , NOISE VOLTAGE (nV) 20 en , NOISE VOLTAGE (nV) 30 BANDWIDTH = 1.0 Hz 3.0 mA 10 1.0 mA 7.0 5.0 3.0 300 A 10 20 50 100 200 RS 0 f = 10 Hz 10 100 Hz 7.0 10 kHz 3.0 0.01 0.02 500 1k 2k 5k 10k 20k 50k 100k f, FREQUENCY (Hz) Figure 2. Effects of Frequency IC = 10 mA 2.0 1.0 mA 300 A 100 A 0.3 0.2 0.1 16 3.0 mA 1.0 0.7 0.5 RS 0 10 20 10 A 50 100 200 0.05 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) 5.0 10 20 BANDWIDTH = 1.0 Hz 3.0 100 kHz Figure 3. Effects of Collector Current NF, NOISE FIGURE (dB) In, NOISE CURRENT (pA) 10 7.0 5.0 1.0 kHz 5.0 BANDWIDTH = 10 Hz to 15.7 kHz 12 500 A 8.0 IC = 1.0 mA 100 A 10 A 4.0 30 A 0 10 500 1k 2k 5k 10k 20k 50k 100k f, FREQUENCY (Hz) 20 Figure 4. Noise Current 50 100 200 500 1k 2k 5k 10k 20k 50k 100k RS, SOURCE RESISTANCE (OHMS) Figure 5. Wideband Noise Figure 100 Hz NOISE DATA 20 BANDWIDTH = 1.0 Hz 100 A 100 70 50 3.0 mA 1.0 mA 30 300 A 20 10 7.0 5.0 3.0 IC = 10 mA NF, NOISE FIGURE (dB) VT, TOTAL NOISE VOLTAGE (nV) 300 200 30 A 10 A 10 20 16 IC = 10 mA 3.0 mA 1.0 mA 12 300 A 8.0 100 A 4.0 50 100 200 500 1k 2k 5k 10k 20k 50k 100k RS, SOURCE RESISTANCE (OHMS) 0 30 A 10 Figure 6. Total Noise Voltage 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k RS, SOURCE RESISTANCE (OHMS) Figure 7. Noise Figure http://onsemi.com 561 10 A BANDWIDTH = 1.0 Hz h FE, DC CURRENT GAIN (NORMALIZED) MMBT2484LT1 4.0 3.0 VCE = 5.0 V 2.0 TA = 125C 25C 1.0 -55C 0.7 0.5 0.4 0.3 0.2 0.01 0.02 0.03 0.05 0.1 1.0 0.2 0.3 0.5 IC, COLLECTOR CURRENT (mA) 2.0 3.0 5.0 10 Figure 8. DC Current Gain 1.0 -0.4 RVBE, BASE-EMITTER TEMPERATURE COEFFICIENT (mV/ C) TJ = 25C V, VOLTAGE (VOLTS) 0.8 0.6 VBE @ VCE = 5.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 -0.8 -1.2 TJ = 25C to 125C -1.6 -2.0 -55C to 25C -2.4 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 100 8.0 C, CAPACITANCE (pF) 6.0 TJ = 25C Cob 4.0 3.0 Ceb Cib Ccb 2.0 1.0 0.8 0.1 0.2 1.0 2.0 5.0 0.5 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 Figure 10. Temperature Coefficients 50 100 f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) Figure 9. "On" Voltages 20 Figure 11. Capacitance 500 300 200 100 VCE = 5.0 V TJ = 25C 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 12. Current-Gain -- Bandwidth Product http://onsemi.com 562 MMBT2907ALT1 General Purpose Transistors PNP Silicon MAXIMUM RATINGS Rating http://onsemi.com Symbol 2907A Unit Collector-Emitter Voltage VCEO -60 Vdc Collector-Base Voltage VCBO -60 Vdc Emitter-Base Voltage VEBO -5.0 Vdc IC -600 mAdc Symbol Max Unit Collector Current -- Continuous COLLECTOR 3 1 BASE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature PD 2 EMITTER mW 225 mW/C 1.8 RJA 556 C/W PD 300 mW 2.4 mW/C RJA 417 C/W TJ, Tstg -55 to +150 C 3 1 2 SOT-23 (TO-236AB) CASE 318 STYLE 6 DEVICE MARKING ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS 2Fx Collector-Emitter Breakdown Voltage(3) (IC = -10 mAdc, IB = 0) V(BR)CEO Collector-Base Breakdown Voltage (IC = -10 Adc, IE = 0) V(BR)CBO Emitter-Base Breakdown Voltage (IE = -10 Adc, IC = 0) V(BR)EBO Collector Cutoff Current (VCE = -30 Vdc, VBE(off) = -0.5 Vdc) ICEX Collector Cutoff Current (VCB = -50 Vdc, IE = 0) (VCB = -50 Vdc, IE = 0, TA = 125C) ICBO Base Current (VCE = -30 Vdc, VEB(off) = -0.5 Vdc) IB Vdc -60 -- -60 -- -5.0 -- Vdc x = Monthly Date Code Vdc ORDERING INFORMATION nAdc -- -50 -- -- -0.010 -10 -- -50 Device Package Shipping Adc MMBT2907ALT1 SOT-23 3000 Units/Reel nAdc Preferred devices are recommended choices for future use and best overall value. 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. Semiconductor Components Industries, LLC, 2001 September, 2001 - Rev. 1 563 Publication Order Number: MMBT2907ALT1/D MMBT2907ALT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Min Max 75 -- (IC = -1.0 mAdc, VCE = -10 Vdc) 100 -- (IC = -10 mAdc, VCE = -10 Vdc) 100 -- (IC = -150 mAdc, VCE = -10 Vdc) (3) 100 300 (IC = -500 mAdc, VCE = -10 Vdc) (3) 50 -- -- -- -0.4 -1.6 -- -- -1.3 -2.6 200 -- -- 8.0 -- 30 ton -- 45 td -- 10 tr -- 40 toff -- 100 ts -- 80 tf -- 30 Characteristic Unit ON CHARACTERISTICS DC Current Gain (IC = -0.1 mAdc, VCE = -10 Vdc) hFE -- Collector-Emitter Saturation Voltage (3) (IC = -150 mAdc, IB = -15 mAdc) (IC = -500 mAdc, IB = -50 mAdc) VCE(sat) Base-Emitter Saturation Voltage (3) (IC = -150 mAdc, IB = -15 mAdc) (IC = -500 mAdc, IB = -50 mAdc) VBE(sat) Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (3),(4) (IC = -50 mAdc, VCE = -20 Vdc, f = 100 MHz) fT Output Capacitance (VCB = -10 Vdc, IE = 0, f = 1.0 MHz) Cobo Input Capacitance (VEB = -2.0 Vdc, IC = 0, f = 1.0 MHz) Cibo MHz pF pF SWITCHING CHARACTERISTICS Turn-On Time (VCC = -30 30 Vdc, Vd IC = -150 150 mAdc, Ad IB1 = -15 mAdc) Delay Time Rise Time Turn-Off Time 6 0 Vdc, Vd IC = -150 150 mAdc, Ad (VCC = -6.0 IB1 = IB2 = -15 mAdc) Storage Time Fall Time ns ns 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 4. fT is defined as the frequency at which |hfe| extrapolates to unity. INPUT Zo = 50 PRF = 150 PPS RISE TIME 2.0 ns P.W. < 200 ns 200 1.0 k 0 50 -16 V INPUT Zo = 50 PRF = 150 PPS RISE TIME 2.0 ns P.W. < 200 ns -30 V TO OSCILLOSCOPE RISE TIME 5.0 ns +15 V -6.0 V 1.0 k 1.0 k 0 -30 V 50 37 TO OSCILLOSCOPE RISE TIME 5.0 ns 1N916 200 ns 200 ns Figure 1. Delay and Rise Time Test Circuit Figure 2. Storage and Fall Time Test Circuit http://onsemi.com 564 MMBT2907ALT1 TYPICAL CHARACTERISTICS hFE , NORMALIZED CURRENT GAIN 3.0 VCE = -1.0 V VCE = -10 V 2.0 TJ = 125C 25C 1.0 -55C 0.7 0.5 0.3 0.2 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. DC Current Gain -1.0 -0.8 IC = -1.0 mA -10 mA -100 mA -500 mA -0.6 -0.4 -0.2 0 -0.005 -0.02 -0.03 -0.05 -0.07 -0.1 -0.01 -0.2 -0.3 -0.5 -0.7 -1.0 IB, BASE CURRENT (mA) -2.0 -3.0 -20 -30 -5.0 -7.0 -10 -50 Figure 4. Collector Saturation Region 500 tr 100 70 50 30 20 10 300 VCC = -30 V IC/IB = 10 TJ = 25C 200 t, TIME (ns) t, TIME (ns) 300 200 td @ VBE(off) = 0 V 7.0 5.0 3.0 -5.0 -7.0 -10 tf 100 70 50 30 ts = ts - 1/8 tf 20 10 7.0 5.0 -5.0 -7.0 -10 2.0 V -20 -30 -50 -70 -100 IC, COLLECTOR CURRENT VCC = -30 V IC/IB = 10 IB1 = IB2 TJ = 25C -200 -300 -500 Figure 5. Turn-On Time -20 -30 -50 -70 -100 -200 -300 -500 IC, COLLECTOR CURRENT (mA) Figure 6. Turn-Off Time http://onsemi.com 565 MMBT2907ALT1 TYPICAL SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VCE = 10 Vdc, TA = 25C 10 10 8.0 8.0 NF, NOISE FIGURE (dB) IC = -1.0 mA, Rs = 430 -500 A, Rs = 560 -50 A, Rs = 2.7 k -100 A, Rs = 1.6 k 6.0 4.0 Rs = OPTIMUM SOURCE RESISTANCE 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k f, FREQUENCY (kHz) Rs, SOURCE RESISTANCE (OHMS) Figure 7. Frequency Effects Figure 8. Source Resistance Effects 20 C, CAPACITANCE (pF) IC = -50 A -100 A -500 A -1.0 mA 4.0 0 100 30 Ceb 10 7.0 5.0 Ccb 3.0 2.0 -0.1 6.0 2.0 -0.2 -0.3 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) NF, NOISE FIGURE (dB) f = 1.0 kHz 50 k 400 300 200 100 80 VCE = -20 V TJ = 25C 60 40 30 20 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -1000 REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 9. Capacitances Figure 10. Current-Gain -- Bandwidth Product +0.5 -1.0 V, VOLTAGE (VOLTS) -0.6 0 VBE(sat) @ IC/IB = 10 COEFFICIENT (mV/ C) TJ = 25C -0.8 VBE(on) @ VCE = -10 V -0.4 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -0.5 -1.0 -1.5 RVB for VBE -2.0 VCE(sat) @ IC/IB = 10 0 -0.1 -0.2 RVC for VCE(sat) -50 -100 -200 -2.5 -0.1 -0.2 -0.5 -1.0 -2.0 -500 -5.0 -10 -20 -50 -100 -200 -500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 11. "On" Voltage Figure 12. Temperature Coefficients http://onsemi.com 566 ON Semiconductor General Purpose Transistor MMBT2907AWT1 PNP Silicon ON Semiconductor Preferred Device These transistors are designed for general purpose amplifier applications. They are housed in the SOT-323/SC-70 package which is designed for low power surface mount applications. 3 1 2 CASE 419-04, STYLE 3 SOT-323/SC-70 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO -60 Vdc Collector-Base Voltage VCBO -60 Vdc Emitter-Base Voltage VEBO -5.0 Vdc IC -600 mAdc Symbol Max Unit PD 150 mW RJA 833 C/W TJ, Tstg -55 to +150 C Collector Current -- Continuous COLLECTOR 3 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 TA = 25C Board(1) Thermal Resistance Junction to Ambient Junction and Storage Temperature DEVICE MARKING MMBT2907AWT1 = 20 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage(2) (IC = -10 mAdc, IB = 0) V(BR)CEO -60 -- Vdc Collector-Base Breakdown Voltage (IC = -10 mAdc, IE = 0) V(BR)CBO -60 -- Vdc Emitter-Base Breakdown Voltage (IE = -10 Adc, IC = 0) V(BR)EBO -5.0 -- Vdc Base Cutoff Current (VCE = -30 Vdc, VEB(off) = -0.5 Vdc) IBL -- -50 nAdc Collector Cutoff Current (VCE = -30 Vdc, VEB(off) = -0.5 Vdc) ICEX -- -50 nAdc OFF CHARACTERISTICS 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 567 Publication Order Number: MMBT2907AWT1/D MMBT2907AWT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Min Max 75 100 100 100 50 -- -- -- -- -- -- -- -0.4 -1.6 -- -- -1.3 -2.6 fT 200 -- MHz Output Capacitance (VCB = -10 Vdc, IE = 0, f = 1.0 MHz) Cobo -- 8.0 pF Input Capacitance (VEB = -2.0 Vdc, IC = 0, f = 1.0 MHz) Cibo -- 30 pF ton -- 45 Characteristic ON Unit CHARACTERISTICS(1) DC Current Gain (1) (IC = -0.1 mAdc, VCE = -10 Vdc) (IC = -1.0 mAdc, VCE = -10 Vdc) (IC = -10 mAdc, VCE = -10 Vdc) (IC = -150 mAdc, VCE = -10 Vdc) (IC = -500 mAdc, VCE = -10 Vdc) HFE Collector-Emitter Saturation Voltage(1) (IC = -150 mAdc, IB = -15 mAdc) (IC = -500 mAdc, IB = -50 mAdc) VCE(sat) Base-Emitter Saturation Voltage(1) (IC = -150 mAdc, IB = -15 mAdc) (IC = -500 mAdc, IB = -50 mAdc) VBE(sat) -- Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = -50 mAdc, VCE = 20 Vdc, f = 100 MHz) SWITCHING CHARACTERISTICS Turn-On Time Delay Time (VCC = -30 30 Vdc, Vd IC = -150 mAdc, IB1 = -15 mAdc) td -- 10 Rise Time tr -- 40 Storage Time ts -- 80 tf -- 30 toff -- 100 Fall Time (VCC = -6.0 6 0 Vdc, Vd IC = -150 150 mAdc, Ad IB1 = IB2 = 15 mAdc) Turn-Off Time 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. http://onsemi.com 568 ns ON Semiconductor Switching Transistor MMBT3640LT1 PNP Silicon 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO -12 Vdc Collector-Base Voltage VCBO -12 Vdc Emitter-Base Voltage VEBO -4.0 Vdc IC -80 mAdc Collector Current -- Continuous 1 2 CASE 318-08, STYLE 6 SOT-23 (TO-236AB) COLLECTOR 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 TA = 25C Derate above 25C Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W PD 300 mW 2.4 mW/C RJA 417 C/W TJ, Tstg -55 to +150 C Board(1) Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 1 BASE 2 EMITTER DEVICE MARKING MMBT3640LT1 = 2J ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Min Max Unit V(BR)CES -12 -- Vdc VCEO(sus) -12 -- Vdc Collector-Base Breakdown Voltage (IC = -100 Adc, IE = 0) V(BR)CBO -12 -- Vdc Emitter-Base Breakdown Voltage (IE = -100 Adc, IC = 0) V(BR)EBO -4.0 -- Vdc -- -- -0.01 -1.0 -- -10 Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = -100 Adc, VBE = 0) Collector-Emitter Sustaining Voltage(1) (IC = -10 mAdc, IB = 0) Collector Cutoff Current (VCE = -6.0 Vdc, VBE = 0) (VCE = -6.0 Vdc, VBE = 0, TA = 65C) Adc ICES Base Cutoff Current (VCE = -6.0 Vdc, VEB = 0) IB nAdc 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 569 Publication Order Number: MMBT3640LT1/D MMBT3640LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Characteristic ON Min Max 30 20 120 -- -- -- -- -0.2 -0.6 -0.25 -0.75 -0.8 -- -0.95 -1.0 -1.5 500 -- -- 3.5 -- 3.5 Unit CHARACTERISTICS(3) DC Current Gain (IC = -10 mAdc, VCE = -0.3 Vdc) (IC = -50 mAdc, VCE = -1.0 Vdc) hFE -- Collector-Emitter Saturation Voltage (IC = -10 mAdc, IB = -1.0 mAdc) (IC = -50 mAdc, IB = -5.0 mAdc) (IC = -10 mAdc, IB = -1.0 mAdc, TA = 65C) VCE(sat) Base-Emitter Saturation Voltage (IC = -10 mAdc, IB = -0.5 mAdc) (IC = -10 mAdc, IB = -1.0 mAdc) (IC = -50 mAdc, IB = -5.0 mAdc) VBE(sat) Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = -10 mAdc, VCE = -5.0 Vdc, f = 100 MHz) fT MHz Output Capacitance (VCB = -5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo Input Capacitance (VEB = -0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo pF pF SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (VCC = -6.0 6.0 Vdc, IC = -50 50 mAdc, VEB(off) = -1.9 Vdc, IB1 = -5.0 mAdc) td -- 10 tr -- 30 (VCC = -6.0 6.0 Vdc, IC = -50 50 mAdc, IB1 = IB2 = -5.0 mAdc) ts -- 20 tf -- 12 -- -- 25 60 -- -- 35 75 Turn-On Time (VCC = -6.0 Vdc, IC = -50 mAdc, VEB(off) = -1.9 Vdc, IB1 = -5.0 mAdc) (VCC = -1.5 Vdc, IC = -10 mAdc, IB1 = -0.5 mAdc) ton Turn-Off Time (VCC = -6.0 Vdc, IC = -50 mAdc, VEB(off) = -1.9 Vdc, IB1 = IB2 = -5.0 mAdc) (VCC = -1.5 Vdc, IC = -10 mAdc, IB1 = IB2 = -0.5 mAdc) toff ns ns ns ns 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. VBB = +1.9 V 0 1.0 k 0.1 F 680 VCC = -6.0 V VBB = -6.0 V 110 5.0 k Vout 5.0 V 0.1 F 5.0 k VCC = 1.5 V 130 Vout Vin -6.8 V TO SAMPLING SCOPE PULSE SOURCE 51 INPUT Z 100 k RISE TIME 1.0 ns RISE TIME 1.0 ns PULSE WIDTH 100 ns Zin = 50 OHMS NOTES: Collector Current = 50 mA, FALL TIME 1.0 ns NOTES: Turn-On and Turn-Off Time NOTES: Base Currents = 5.0 mA. Vin 0 TO SAMPLING SCOPE PULSE SOURCE 51 INPUT Z 100 k RISE TIME 1.0 ns RISE TIME 1.0 ns PULSE WIDTH 200 ns Zin = 50 OHMS NOTES: Collector Current = 10 mA, FALL TIME 1.0 ns NOTES: Turn-On and Turn-Off Time NOTES: Base Currents = 0.5 mA. Figure 1. Figure 2. http://onsemi.com 570 MMBT3640LT1 200 -1.4 -1.2 TJ = 125C 100 25C 70 50 V, VOLTAGE (VOLTS) hFE, DC CURRENT GAIN VCE = -1.0 V -55C 30 20 TJ = 25C VBE(sat) @ IC/IB = 10 -1.0 -0.8 VBE(on) @ VCE = -1.0 V -0.6 -0.4 VCE(sat) @ IC/IB = 10 -0.2 10 -0.1 -0.2 -5.0 -10 -20 -0.5 -1.0 -2.0 IC, COLLECTOR CURRENT (mA) -50 0 -0.1 -0.2 -100 +0.5 -1.0 TJ = 25C -0.8 IC = -1.0 mA -5.0 mA -20 mA -80 mA -0.6 -0.4 -0.2 0 -0.01 -0.02 -0.05 -0.1 -0.2 -0.5 -1.0 IB, BASE CURRENT (mA) -2.0 -5.0 0 *APPLIES FOR IC/IB hFE/4 -50 -100 -55C to 25C -0.5 -1.0 25C to 125C -1.5 -55C to 25C RVB for VBE -2.0 -0.1 -0.2 -10 25C to 125C RVC for VCE(sat) Figure 5. Collector Saturation Region f, T CURRENT-GAIN BANDWIDTH PRODUCT (MHz) -1.0 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mA) Figure 4. "On" Voltages V, TEMPERATURE COEFFICIENT (mV/ C) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. DC Current Gain -0.5 -0.5 -1.0 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mA) -50 -100 Figure 6. Temperature Coefficients 5.0 2000 TJ = 25C f = 100 MHz TJ = 25C VCE = -10 V 3.0 C, CAPACITANCE (pF) 1000 -1.0 V 800 600 400 2.0 Cobo Cibo 1.0 0.7 200 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 0.5 -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 7. Current-Gain -- Bandwidth Product Figure 8. Capacitance http://onsemi.com 571 -20 ON Semiconductor General Purpose Transistor MMBT3904LT1 NPN Silicon ON Semiconductor Preferred Device 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 6.0 Vdc IC 200 mAdc Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W PD 300 mW 2.4 mW/C RJA 417 C/W TJ, Tstg -55 to +150 C Collector Current -- Continuous 2 CASE 318-08, STYLE 6 SOT-23 (TO-236) COLLECTOR 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 TA = 25C Derate above 25C Board(1) Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature 1 BASE 2 EMITTER DEVICE MARKING MMBT3904LT1 = 1AM ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage (3) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 -- Vdc Collector-Base Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO 60 -- Vdc Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO 6.0 -- Vdc Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) IBL -- 50 nAdc Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) ICEX -- 50 nAdc OFF CHARACTERISTICS 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 2 572 Publication Order Number: MMBT3904LT1/D MMBT3904LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Min Max 40 70 100 60 30 -- -- 300 -- -- -- -- 0.2 0.3 0.65 -- 0.85 0.95 fT 300 -- MHz Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo -- 4.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo -- 8.0 pF Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hie 1.0 10 k ohms Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hre 0.5 8.0 X 10-4 Small-Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hfe 100 400 -- Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hoe 1.0 40 mhos Noise Figure (VCE = 5.0 Vdc, IC = 100 Adc, RS = 1.0 k ohms, f = 1.0 kHz) NF -- 5.0 dB (VCC = 3.0 Vdc, VBE = -0.5 0.5 Vdc, IC = 10 mAdc, IB1 = 1.0 mAdc) td -- 35 tr -- 35 (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc) ts -- 200 tf -- 50 Characteristic ON Unit CHARACTERISTICS(3) DC Current Gain (1) (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) HFE Collector-Emitter Saturation Voltage (3) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VCE(sat) Base-Emitter Saturation Voltage (3) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VBE(sat) -- Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. http://onsemi.com 573 ns ns MMBT3904LT1 DUTY CYCLE = 2% 300 ns +3 V +10.9 V 275 +10.9 V DUTY CYCLE = 2% 10 k -0.5 V +3 V t1 10 < t1 < 500 s 275 10 k 0 CS < 4 pF* < 1 ns CS < 4 pF* 1N916 -9.1 V < 1 ns * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS TJ = 25C TJ = 125C 10 5000 Q, CHARGE (pC) CAPACITANCE (pF) 2000 5.0 Cibo 3.0 Cobo 2.0 1.0 0.1 VCC = 40 V IC/IB = 10 3000 7.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 1000 700 500 100 70 50 20 30 40 QT 300 200 QA 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 REVERSE BIAS VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 3. Capacitance Figure 4. Charge Data http://onsemi.com 574 200 MMBT3904LT1 500 t r, RISE TIME (ns) tr @ VCC = 3.0 V 50 30 20 7 5 40 V 15 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC/IB = 20 50 30 20 7 5 200 5.0 7.0 10 20 30 50 70 100 Figure 5. Turn-On Time Figure 6. Rise Time IC/IB = 10 30 20 10 7 5 30 50 70 100 200 IC/IB = 10 30 20 7 5 20 IC/IB = 20 100 70 50 10 5.0 7.0 10 VCC = 40 V IB1 = IB2 300 200 IC/IB = 20 50 200 500 ts = ts - 1/8 tf IB1 = IB2 IC/IB = 10 2.0 3.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 100 70 1.0 1.0 IC, COLLECTOR CURRENT (mA) 500 300 200 100 70 10 2.0 V td @ VOB = 0 V VCC = 40 V IC/IB = 10 300 200 t f , FALL TIME (ns) TIME (ns) 100 70 10 t s , STORAGE TIME (ns) 500 IC/IB = 10 300 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. Storage Time Figure 8. Fall Time 200 TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = 5.0 Vdc, TA = 25C, Bandwidth = 1.0 Hz) 12 SOURCE RESISTANCE = 200 IC = 0.5 mA 8 6 SOURCE RESISTANCE = 1.0 k IC = 50 A 4 0 0.1 SOURCE RESISTANCE = 500 IC = 100 A 0.2 0.4 1.0 2.0 f = 1.0 kHz 12 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 10 2 14 SOURCE RESISTANCE = 200 IC = 1.0 mA IC = 1.0 mA IC = 0.5 mA 10 IC = 50 A 8 IC = 100 A 6 4 2 4.0 10 20 40 0 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k OHMS) Figure 9. Figure 10. http://onsemi.com 575 40 100 MMBT3904LT1 h PARAMETERS (VCE = 10 Vdc, f = 1.0 kHz, TA = 25C) 100 hoe, OUTPUT ADMITTANCE ( mhos) h fe , CURRENT GAIN 300 200 100 70 50 30 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 50 20 10 5 2 1 10 0.1 0.2 h re , VOLTAGE FEEDBACK RATIO (X 10 -4 ) h ie , INPUT IMPEDANCE (k OHMS) 20 10 5.0 2.0 1.0 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 5.0 10 Figure 12. Output Admittance Figure 11. Current Gain 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 10 0.1 0.2 Figure 13. Input Impedance 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) Figure 14. Voltage Feedback Ratio h FE, DC CURRENT GAIN (NORMALIZED) TYPICAL STATIC CHARACTERISTICS 2.0 TJ = +125C VCE = 1.0 V +25C 1.0 0.7 -55C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) Figure 15. DC Current Gain http://onsemi.com 576 20 30 50 70 100 200 VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) MMBT3904LT1 1.0 TJ = 25C 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) Figure 16. Collector Saturation Region 1.0 TJ = 25C VBE(sat) @ IC/IB =10 V, VOLTAGE (VOLTS) 1.0 0.8 VBE @ VCE =1.0 V 0.6 0.4 VCE(sat) @ IC/IB =10 VC FOR VCE(sat) 0 -55C TO +25C -0.5 -55C TO +25C -1.0 +25C TO +125C VB FOR VBE(sat) -1.5 0.2 0 +25C TO +125C 0.5 COEFFICIENT (mV/ C) 1.2 1.0 2.0 5.0 10 20 50 100 -2.0 200 0 20 40 60 80 100 120 140 160 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 17. "ON" Voltages Figure 18. Temperature Coefficients http://onsemi.com 577 180 200 MMBT3904TT1 General Purpose Transistors MMBT3904TT1 - NPN Silicon This transistor is designed for general purpose amplifier applications. It is housed in the SOT-416/SC-75 package which is designed for low power surface mount applications. * Device Marking: http://onsemi.com GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT MMBT3904TT1 = AM MAXIMUM RATINGS (TA = 25C) MMBT3904TT1 Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 6.0 Vdc IC 200 mAdc Rating Collector Current - Continuous COLLECTOR 3 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation, FR-4 Board (1) TA = 25C Derated above 25C PD Thermal Resistance, Junction to Ambient (1) RJA Total Device Dissipation, FR-4 Board (2) TA = 25C Derated above 25C PD Thermal Resistance, Junction to Ambient (2) Junction and Storage Temperature Range Max Unit 200 mW 1.6 mW/C 600 C/W 3 300 mW 2.4 mW/C RJA 400 C/W TJ, Tstg -55 to +150 C 2 1 CASE 463 SOT-416/SC-75 STYLE 1 DEVICE MARKING (1) FR-4 @ Minimum Pad (2) FR-4 @ 1.0 x 1.0 Inch Pad See Table ORDERING INFORMATION Semiconductor Components Industries, LLC, 2001 October, 2001 - Rev. 2 578 Device Package Shipping MMBT3904TT1 SOT-416 3000 / Tape & Reel Publication Order Number: MMBT3904TT1/D MMBT3904TT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max 40 -40 - - 60 -40 - - 6.0 -5.0 - - - - 50 -50 - - 50 -50 40 70 100 60 30 - - 300 - - - - 0.2 0.3 0.65 - 0.85 0.95 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (3) (IC = 1.0 mAdc, IB = 0) V(BR)CEO Collector-Base Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) IBL Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) ICEX Vdc Vdc Vdc nAdc nAdc ON CHARACTERISTICS (3) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) hFE Collector-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VCE(sat) Base-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VBE(sat) - Vdc Vdc r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE (3) Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 1.0 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) 1.0 Figure 1. Normalized Thermal Response http://onsemi.com 579 10 100 1000 MMBT3904TT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) fT Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hie Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hre Small-Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hfe Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hoe Noise Figure (VCE = 5.0 Vdc, IC = 100 Adc, RS = 1.0 k , f = 1.0 kHz) NF MHz 300 - - 4.0 - 8.0 1.0 10 0.5 8.0 100 400 1.0 40 - 5.0 pF pF k X 10-4 - mhos dB SWITCHING CHARACTERISTICS Delay Time (VCC = 3.0 Vdc, VBE = -0.5 Vdc) MMBT3904TT1 td - 35 Rise Time (IC = 10 mAdc, IB1 = 1.0 mAdc) MMBT3904TT1 tr - 35 Storage Time (VCC = 3.0 Vdc, IC = 10 mAdc) MMBT3904TT1 ts - 200 Fall Time (IB1 = IB2 = 1.0 mAdc) MMBT3904TT1 tf - 50 DUTY CYCLE = 2% 300 ns +3 V +10.9 V 275 DUTY CYCLE = 2% 10 k -0.5 V t1 10 < t1 < 500 s ns +3 V +10.9 V 275 10 k 0 CS < 4 pF* < 1 ns ns 1N916 -9.1 V CS < 4 pF* < 1 ns * Total shunt capacitance of test jig and connectors Figure 2. Delay and Rise Time Equivalent Test Circuit Figure 3. Storage and Fall Time Equivalent Test Circuit http://onsemi.com 580 MMBT3904TT1 TYPICAL TRANSIENT CHARACTERISTICS TJ = 25C TJ = 125C 10 5000 Q, CHARGE (pC) CAPACITANCE (pF) 2000 5.0 Cibo 3.0 Cobo 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 2.0 3.0 5.0 7.0 10 20 30 50 70 100 Figure 5. Charge Data 200 500 IC/IB = 10 VCC = 40 V IC/IB = 10 300 tr @ VCC = 3.0 V 30 20 40 V t r, RISE TIME (ns) 200 15 V td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC/IB = 20 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) Figure 6. Turn-On Time Figure 7. Rise Time IC/IB = 10 5.0 7.0 10 20 30 50 70 100 VCC = 40 V IB1 = IB2 300 200 IC/IB = 10 30 20 200 500 ts = ts - 1/8 tf IB1 = IB2 IC/IB = 20 2.0 3.0 30 20 IC, COLLECTOR CURRENT (mA) 100 70 50 1.0 100 70 50 10 7 5 2.0 V t f , FALL TIME (ns) TIME (ns) 1.0 Figure 4. Capacitance 500 t s , STORAGE TIME (ns) QA IC, COLLECTOR CURRENT (mA) 100 70 50 10 7 5 QT 300 200 REVERSE BIAS VOLTAGE (VOLTS) 300 200 300 200 1000 700 500 100 70 50 500 10 7 5 VCC = 40 V IC/IB = 10 3000 7.0 IC/IB = 10 30 20 10 7 5 200 IC/IB = 20 100 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 8. Storage Time Figure 9. Fall Time http://onsemi.com 581 200 MMBT3904TT1 TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = 5.0 Vdc, TA = 25C, Bandwidth = 1.0 Hz) 14 12 SOURCE RESISTANCE = 200 IC = 1.0 mA SOURCE RESISTANCE = 200 IC = 0.5 mA 8 6 SOURCE RESISTANCE = 1.0 k IC = 50 A 4 2 0 0.1 SOURCE RESISTANCE = 500 IC = 100 A 0.2 0.4 1.0 2.0 f = 1.0 kHz 12 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 10 IC = 1.0 mA IC = 0.5 mA 10 IC = 50 A 8 IC = 100 A 6 4 2 4.0 10 20 40 0 0.1 100 0.2 0.4 1.0 2.0 4.0 10 20 f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k OHMS) Figure 10. Noise Figure Figure 11. Noise Figure 40 100 5.0 10 5.0 10 h PARAMETERS (VCE = 10 Vdc, f = 1.0 kHz, TA = 25C) 100 hoe, OUTPUT ADMITTANCE ( mhos) 300 h fe , CURRENT GAIN 200 100 70 50 30 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 50 20 10 5 2 1 10 0.1 0.2 Figure 12. Current Gain Figure 13. Output Admittance h re , VOLTAGE FEEDBACK RATIO (X 10 -4 ) h ie , INPUT IMPEDANCE (k OHMS) 20 10 5.0 2.0 1.0 0.5 0.2 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 10 0.1 Figure 14. Input Impedance 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) Figure 15. Voltage Feedback Ratio http://onsemi.com 582 MMBT3904TT1 h FE, DC CURRENT GAIN (NORMALIZED) TYPICAL STATIC CHARACTERISTICS 2.0 TJ = +125C VCE = 1.0 V MMBT3904WT1 +25C 1.0 0.7 -55C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 16. DC Current Gain 1.0 TJ = 25C 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) Figure 17. Collector Saturation Region 1.0 TJ = 25C VBE(sat) @ IC/IB =10 V, VOLTAGE (VOLTS) 1.0 0.8 VBE @ VCE =1.0 V 0.6 0.4 VCE(sat) @ IC/IB =10 VC FOR VCE(sat) 0 -55C TO +25C -0.5 -55C TO +25C -1.0 +25C TO +125C VB FOR VBE(sat) -1.5 0.2 0 +25C TO +125C 0.5 COEFFICIENT (mV/ C) 1.2 1.0 2.0 5.0 10 20 50 100 -2.0 200 0 20 40 60 80 100 120 140 160 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 18. "ON" Voltages Figure 19. Temperature Coefficients http://onsemi.com 583 180 200 ON Semiconductor PNP General Purpose Transistors MMBT3904WT1 NPN and PNP Silicon NPN MMBT3906WT1 These transistors are designed for general purpose amplifier applications. They are housed in the SOT-323/SC-70 which is designed for low power surface mount applications. 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage MMBT3904WT1 MMBT3906WT1 VCEO 40 -40 Vdc Collector-Base Voltage MMBT3904WT1 MMBT3906WT1 VCBO 60 -40 Vdc Emitter-Base Voltage MMBT3904WT1 MMBT3906WT1 VEBO 6.0 -5.0 Vdc IC 200 -200 mAdc Symbol Max Unit PD 150 mW RJA 833 C/W TJ, Tstg -55 to +150 C Collector Current -- Continuous MMBT3904WT1 MMBT3906WT1 1 2 CASE 419-04, STYLE 3 SOT-323/SC-70 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation(1) TA = 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature DEVICE MARKING MMBT3904WT1 = AM MMBT3906WT1 = 2A ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Characteristic Min Max 40 -40 -- -- 60 -40 -- -- 6.0 -5.0 -- -- -- -- 50 -50 -- -- 50 -50 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(2) (IC = 1.0 mAdc, IB = 0) (IC = -1.0 mAdc, IB = 0) MMBT3904WT1 MMBT3906WT1 Collector-Base Breakdown Voltage (IC = 10 Adc, IE = 0) (IC = -10 Adc, IE = 0) MMBT3904WT1 MMBT3906WT1 Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) (IE = -10 Adc, IC = 0) MMBT3904WT1 MMBT3906WT1 Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) (VCE = -30 Vdc, VEB = -3.0 Vdc) MMBT3904WT1 MMBT3906WT1 Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) (VCE = -30 Vdc, VEB = -3.0 Vdc) MMBT3904WT1 MMBT3906WT1 V(BR)CEO Vdc V(BR)CBO Vdc V(BR)EBO Vdc IBL nAdc ICEX nAdc 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint. 2. Pulse Test: Pulse Width 300 s; Duty Cycle 2.0%. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 584 Publication Order Number: MMBT3904WT1/D MMBT3904WT1 MMBT3906WT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Min Max MMBT3904WT1 40 70 100 60 30 -- -- 300 -- -- MMBT3906WT1 60 80 100 60 30 -- -- 300 -- -- MMBT3904WT1 -- -- 0.2 0.3 MMBT3906WT1 -- -- -0.25 -0.4 MMBT3904WT1 0.65 -- 0.85 0.95 MMBT3906WT1 -0.65 -- -0.85 -0.95 300 250 -- -- -- -- 4.0 4.5 -- -- 8.0 10.0 1.0 2.0 10 12 Characteristic Unit ON CHARACTERISTICS(2) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) hFE (IC = -0.1 mAdc, VCE = -1.0 Vdc) (IC = -1.0 mAdc, VCE = -1.0 Vdc) (IC = -10 mAdc, VCE = -1.0 Vdc) (IC = -50 mAdc, VCE = -1.0 Vdc) (IC = -100 mAdc, VCE = -1.0 Vdc) Collector-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) -- VCE(sat) (IC = -10 mAdc, IB = -1.0 mAdc) (IC = -50 mAdc, IB = -5.0 mAdc) Base-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Vdc VBE(sat) (IC = -10 mAdc, IB = -1.0 mAdc) (IC = -50 mAdc, IB = -5.0 mAdc) Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) (IC = -10 mAdc, VCE = -20 Vdc, f = 100 MHz) MMBT3904WT1 MMBT3906WT1 fT Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) (VCB = -5.0 Vdc, IE = 0, f = 1.0 MHz) MMBT3904WT1 MMBT3906WT1 Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) (VEB = -0.5 Vdc, IC = 0, f = 1.0 MHz) MMBT3904WT1 MMBT3906WT1 Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) MMBT3904WT1 MMBT3906WT1 MHz Cobo pF Cibo pF k hie Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) MMBT3904WT1 MMBT3906WT1 Small-Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) MMBT3904WT1 MMBT3906WT1 Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) MMBT3904WT1 MMBT3906WT1 Noise Figure (VCE = 5.0 Vdc, IC = 100 Adc, RS = 1.0 k , f = 1.0 kHz) (VCE = -5.0 Vdc, IC = -100 Adc, RS = 1.0 k , f = 1.0 kHz) MMBT3904WT1 MMBT3906WT1 X 10-4 hre 0.5 0.1 8.0 10 100 100 400 400 1.0 3.0 40 60 -- -- 5.0 4.0 hfe -- mhos hoe NF http://onsemi.com 585 dB MMBT3904WT1 MMBT3906WT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) SMALL-SIGNAL CHARACTERISTICS Characteristic Condition Symbol Min Max Unit SWITCHING CHARACTERISTICS Delay Time (VCC = 3.0 Vdc, VBE = -0.5 Vdc) (VCC = -3.0 Vdc, VBE = 0.5 Vdc) MMBT3904WT1 MMBT3906WT1 td -- -- 35 35 Rise Time (IC = 10 mAdc, IB1 = 1.0 mAdc) (IC = -10 mAdc, IB1 = -1.0 mAdc) MMBT3904WT1 MMBT3906WT1 tr -- -- 35 35 Storage Time (VCC = 3.0 Vdc, IC = 10 mAdc) (VCC = -3.0 Vdc, IC = -10 mAdc) MMBT3904WT1 MMBT3906WT1 ts -- -- 200 225 Fall Time (IB1 = IB2 = 1.0 mAdc) (IB1 = IB2 = -1.0 mAdc) MMBT3904WT1 MMBT3906WT1 tf -- -- 50 75 ns ns 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. MMBT3904WT1 DUTY CYCLE = 2% 300 ns +3 V +10.9 V 275 DUTY CYCLE = 2% 10 k -0.5 V t1 10 < t1 < 500 s +3 V +10.9 V 275 10 k 0 CS < 4 pF* < 1 ns 1N916 -9.1 V CS < 4 pF* < 1 ns * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit http://onsemi.com 586 MMBT3904WT1 MMBT3906WT1 TYPICAL TRANSIENT CHARACTERISTICS TJ = 25C TJ = 125C 10 5000 MMBT3904WT1 VCC = 40 V IC/IB = 10 3000 2000 5.0 Q, CHARGE (pC) CAPACITANCE (pF) 7.0 Cibo 3.0 Cobo 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 1000 700 500 QT 300 200 100 70 50 20 30 40 MMBT3904WT1 QA 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 REVERSE BIAS VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 3. Capacitance Figure 4. Charge Data 200 MMBT3904WT1 500 500 IC/IB = 10 tr @ VCC = 3.0 V 30 20 40 V 15 V MMBT3904WT1 2.0 3.0 5.0 7.0 10 20 30 50 70 100 t s , STORAGE TIME (ns) IC/IB = 20 200 2.0 3.0 5.0 7.0 10 20 30 50 70 100 Figure 6. Rise Time IC/IB = 10 30 50 70 100 200 IC/IB = 20 100 70 50 IC/IB = 10 30 20 10 7 5 MMBT3904WT1 20 VCC = 40 V IB1 = IB2 300 200 IC/IB = 10 5.0 7.0 10 200 500 ts = ts - 1/8 tf IB1 = IB2 30 20 2.0 3.0 1.0 Figure 5. Turn-On Time IC/IB = 20 1.0 MMBT3904WT1 IC, COLLECTOR CURRENT (mA) 100 70 50 10 7 5 30 20 IC, COLLECTOR CURRENT (mA) 500 300 200 100 70 50 10 7 5 2.0 V td @ VOB = 0 V 1.0 t r, RISE TIME (ns) 200 100 70 50 10 7 5 VCC = 40 V IC/IB = 10 300 t f , FALL TIME (ns) TIME (ns) 300 200 MMBT3904WT1 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. Storage Time Figure 8. Fall Time http://onsemi.com 587 200 MMBT3904WT1 MMBT3906WT1 TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = 5.0 Vdc, TA = 25C, Bandwidth = 1.0 Hz) 14 12 SOURCE RESISTANCE = 200 IC = 1.0 mA SOURCE RESISTANCE = 200 IC = 0.5 mA 8 6 SOURCE RESISTANCE = 1.0 k IC = 50 A 4 2 0 0.1 SOURCE RESISTANCE = 500 IC = 100 A 0.2 0.4 1.0 2.0 f = 1.0 kHz 12 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 10 IC = 1.0 mA IC = 0.5 mA 10 IC = 50 A 8 IC = 100 A 6 4 2 MMBT3904WT1 4.0 10 20 40 0 0.1 100 MMBT3904WT1 0.2 0.4 f, FREQUENCY (kHz) 1.0 2.0 4.0 10 20 40 100 RS, SOURCE RESISTANCE (k OHMS) Figure 9. Noise Figure Figure 10. Noise Figure MMBT3904WT1 h PARAMETERS (VCE = 10 Vdc, f = 1.0 kHz, TA = 25C) 300 hoe, OUTPUT ADMITTANCE ( mhos) 100 MMBT3904WT1 h fe , CURRENT GAIN 200 100 70 50 30 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 20 10 5 2 1 10 MMBT3904WT1 50 0.1 0.2 Figure 11. Current Gain h re , VOLTAGE FEEDBACK RATIO (X 10 -4 ) h ie , INPUT IMPEDANCE (k OHMS) MMBT3904WT1 5.0 2.0 1.0 0.5 0.2 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 5.0 10 Figure 12. Output Admittance 20 10 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 7.0 3.0 2.0 1.0 0.7 0.5 10 MMBT3904WT1 5.0 0.1 Figure 13. Input Impedance 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) Figure 14. Voltage Feedback Ratio http://onsemi.com 588 MMBT3904WT1 MMBT3906WT1 MMBT3904WT1 h FE, DC CURRENT GAIN (NORMALIZED) TYPICAL STATIC CHARACTERISTICS 2.0 TJ = +125C VCE = 1.0 V MMBT3904WT1 +25C 1.0 0.7 -55C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 15. DC Current Gain 1.0 TJ = 25C MMBT3904WT1 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) Figure 16. Collector Saturation Region TJ = 25C 1.0 MMBT3904WT1 V, VOLTAGE (VOLTS) MMBT3904WT1 VBE(sat) @ IC/IB =10 1.0 0.8 VBE @ VCE =1.0 V 0.6 0.4 VCE(sat) @ IC/IB =10 VC FOR VCE(sat) 0 -55C TO +25C -0.5 -55C TO +25C -1.0 +25C TO +125C VB FOR VBE(sat) -1.5 0.2 0 +25C TO +125C 0.5 COEFFICIENT (mV/ C) 1.2 1.0 2.0 5.0 10 20 50 100 -2.0 200 0 20 40 60 80 100 120 140 160 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 17. "ON" Voltages Figure 18. Temperature Coefficients http://onsemi.com 589 180 200 MMBT3904WT1 MMBT3906WT1 MMBT3906WT1 3V +9.1 V 275 < 1 ns 10 k 3V < 1 ns 275 10 k 0 CS < 4 pF* +10.6 V 300 ns 10 < t1 < 500 s DUTY CYCLE = 2% CS < 4 pF* 1N916 DUTY CYCLE = 2% t1 10.9 V * Total shunt capacitance of test jig and connectors Figure 19. Delay and Rise Time Equivalent Test Circuit Figure 20. Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS TJ = 25C TJ = 125C 10 5000 MMBT3906WT1 5.0 Cobo Q, CHARGE (pC) CAPACITANCE (pF) 7.0 Cibo 3.0 2.0 MMBT3906WT1 VCC = 40 V IC/IB = 10 3000 2000 QT 1000 700 500 300 200 QA 100 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 20 30 40 5.0 7.0 10 2.0 3.0 30 50 70 100 Figure 22. Charge Data IC/IB = 10 t f , FALL TIME (ns) 70 50 tr @ VCC = 3.0 V 30 20 15 V 40 V 2.0 V 20 30 50 70 100 200 VCC = 40 V IB1 = IB2 IC/IB = 20 70 50 IC/IB = 10 30 20 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 23. Turn-On Time Figure 24. Fall Time http://onsemi.com 590 200 100 10 7 5 td @ VOB = 0 V 5.0 7.0 10 MMBT3906WT1 300 200 100 2.0 3.0 20 Figure 21. Capacitance MMBT3906WT1 1.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 500 300 200 TIME (ns) 1.0 REVERSE BIAS VOLTAGE (VOLTS) 500 10 7 5 70 50 200 MMBT3904WT1 MMBT3906WT1 MMBT3906WT1 TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = -5.0 Vdc, TA = 25C, Bandwidth = 1.0 Hz) 5.0 4.0 SOURCE RESISTANCE = 200 IC = 0.5 mA 3.0 SOURCE RESISTANCE = 2.0 k IC = 50 A 2.0 SOURCE RESISTANCE = 2.0 k IC = 100 A 1.0 0 0.1 0.2 0.4 f = 1.0 kHz IC = 1.0 mA 10 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 12 SOURCE RESISTANCE = 200 IC = 1.0 mA IC = 0.5 mA 8.0 6.0 4.0 IC = 50 A 2.0 IC = 100 A MMBT3906WT1 1.0 2.0 4.0 10 f, FREQUENCY (kHz) 20 40 0 0.1 100 MMBT3906WT1 0.2 0.4 Figure 25. 1.0 2.0 4.0 10 20 RS, SOURCE RESISTANCE (k) 40 100 Figure 26. h PARAMETERS (VCE = -10 Vdc, f = 1.0 kHz, TA = 25C) 100 300 hoe, OUTPUT ADMITTANCE ( mhos) MMBT3906WT1 hfe , CURRENT GAIN 200 100 70 50 30 0.1 0.2 0.5 0.7 1.0 2.0 3.0 0.3 IC, COLLECTOR CURRENT (mA) 70 30 20 10 7.0 5.0 5.0 7.0 10 MMBT3906WT1 50 0.1 0.2 Figure 27. Current Gain 10 10 h re , VOLTAGE FEEDBACK RATIO (X 10 -4 ) MMBT3906WT1 10 h ie , INPUT IMPEDANCE (k ) 5.0 7.0 Figure 28. Output Admittance 20 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.5 0.7 1.0 2.0 3.0 0.3 IC, COLLECTOR CURRENT (mA) 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 MMBT3906WT1 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.1 Figure 29. Input Impedance 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 Figure 30. Voltage Feedback Ratio http://onsemi.com 591 10 MMBT3904WT1 MMBT3906WT1 MMBT3906WT1 STATIC CHARACTERISTICS h FE, DC CURRENT GAIN (NORMALIZED) 2.0 TJ = +125C VCE = 1.0 V +25C 1.0 0.7 -55C 0.5 0.3 MMBT3906WT1 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 20 30 50 70 100 200 VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 31. DC Current Gain 1.0 TJ = 25C MMBT3906WT1 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.2 0.3 0.5 IB, BASE CURRENT (mA) 0.1 0.7 1.0 2.0 3.0 5.0 7.0 10 1.0 VBE(sat) @ IC/IB = 10 TJ = 25C 0.8 V, VOLTAGE (VOLTS) V, TEMPERATURE COEFFICIENTS (mV/C) Figure 32. Collector Saturation Region VBE @ VCE = 1.0 V 0.6 MMBT3906WT1 0.4 0.2 0 VCE(sat) @ IC/IB = 10 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 1.0 0.5 VC FOR VCE(sat) +25C TO +125C -55C TO +25C 0 -0.5 MMBT3906WT1 +25C TO +125C -1.0 VS FOR VBE(sat) -55C TO +25C -1.5 -2.0 0 Figure 33. "ON" Voltages 20 40 60 80 100 120 140 IC, COLLECTOR CURRENT (mA) 160 Figure 34. Temperature Coefficients http://onsemi.com 592 180 200 ON Semiconductor General Purpose Transistor MMBT3906LT1 PNP Silicon ON Semiconductor Preferred Device 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector-Emitter Voltage VCEO -40 Vdc Collector-Base Voltage VCBO -40 Vdc Emitter-Base Voltage VEBO -5.0 Vdc IC -200 mAdc Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W PD 300 mW 2.4 mW/C RJA 417 C/W TJ, Tstg -55 to +150 C Collector Current -- Continuous 2 CASE 318-08, STYLE 6 SOT-23 (TO-236) COLLECTOR 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 TA = 25C Derate above 25C Board(1) Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature 1 BASE 2 EMITTER DEVICE MARKING MMBT3906LT1 = 2A ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Characteristic Min Max -40 -- -40 -- -5.0 -- -- -50 -- -50 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(3) (IC = -1.0 mAdc, IB = 0) V(BR)CEO Collector-Base Breakdown Voltage (IC = -10 Adc, IE = 0) V(BR)CBO Emitter-Base Breakdown Voltage (IE = -10 Adc, IC = 0) V(BR)EBO Base Cutoff Current (VCE = -30 Vdc, VEB = -3.0 Vdc) IBL Collector Cutoff Current (VCE = -30 Vdc, VEB = -3.0 Vdc) ICEX Vdc Vdc Vdc nAdc nAdc 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Width 300 s, Duty Cycle 2.0%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 2 593 Publication Order Number: MMBT3906LT1/D MMBT3906LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Characteristic ON Min Max 60 80 100 60 30 -- -- 300 -- -- -- -- -0.25 -0.4 -0.65 -- -0.85 -0.95 250 -- -- 4.5 -- 10 2.0 12 0.1 10 100 400 3.0 60 -- 4.0 Unit CHARACTERISTICS(3) DC Current Gain (IC = -0.1 mAdc, VCE = -1.0 Vdc) (IC = -1.0 mAdc, VCE = -1.0 Vdc) (IC = -10 mAdc, VCE = -1.0 Vdc) (IC = -50 mAdc, VCE = -1.0 Vdc) (IC = -100 mAdc, VCE = -1.0 Vdc) HFE Collector-Emitter Saturation Voltage (IC = -10 mAdc, IB = -1.0 mAdc) (IC = -50 mAdc, IB = -5.0 mAdc) VCE(sat) Base-Emitter Saturation Voltage (IC = -10 mAdc, IB = -1.0 mAdc) (IC = -50 mAdc, IB = -5.0 mAdc) VBE(sat) -- Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = -10 mAdc, VCE = -20 Vdc, f = 100 MHz) fT Output Capacitance (VCB = -5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo Input Capacitance (VEB = -0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo Input Impedance (IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz) hie Voltage Feedback Ratio (IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz) hre Small-Signal Current Gain (IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz) hfe Output Admittance (IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz) hoe Noise Figure (IC = -100 Adc, VCE = -5.0 Vdc, RS = 1.0 k, f = 1.0 kHz) NF MHz pF pF k X 10-4 -- mhos dB SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (VCC = -3.0 3.0 Vdc, VBE = 0.5 Vdc, IC = -10 mAdc, IB1 = -1.0 mAdc) td -- 35 tr -- 35 (VCC = -3.0 3.0 Vdc, IC = -10 10 mAdc, IB1 = IB2 = -1.0 mAdc) ts -- 225 tf -- 75 ns ns 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 3V 275 < 1 ns +0.5 V 275 10 k 10 k 0 CS < 4 pF* 10.6 V 3V < 1 ns +9.1 V 300 ns DUTY CYCLE = 2% 1N916 10 < t1 < 500 s DUTY CYCLE = 2% t1 CS < 4 pF* 10.9 V * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit http://onsemi.com 594 MMBT3906LT1 TYPICAL TRANSIENT CHARACTERISTICS 10 5000 7.0 3000 2000 Cobo 5.0 Q, CHARGE (pC) CAPACITANCE (pF) TJ = 25C TJ = 125C Cibo 3.0 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE BIAS (VOLTS) 1000 700 500 300 200 100 70 50 20 30 40 VCC = 40 V IC/IB = 10 QT QA 2.0 3.0 1.0 Figure 3. Capacitance tr @ VCC = 3.0 V 15 V 30 20 40 V 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC/IB = 20 100 70 50 30 20 IC/IB = 10 10 2.0 V 7 5 td @ VOB = 0 V 1.0 VCC = 40 V IB1 = IB2 300 200 t f , FALL TIME (ns) TIME (ns) 500 IC/IB = 10 300 200 10 7 5 200 Figure 4. Charge Data 500 100 70 50 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Turn-On Time Figure 6. Fall Time 200 TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = -5.0 Vdc, TA = 25C, Bandwidth = 1.0 Hz) 4.0 12 SOURCE RESISTANCE = 200 IC = 1.0 mA f = 1.0 kHz 10 SOURCE RESISTANCE = 200 IC = 0.5 mA 3.0 SOURCE RESISTANCE = 2.0 k IC = 50 A 2.0 1.0 0 0.1 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 5.0 SOURCE RESISTANCE = 2.0 k IC = 100 A 0.2 0.4 1.0 2.0 4.0 10 f, FREQUENCY (kHz) 20 40 IC = 0.5 mA 8 6 4 IC = 50 A 2 IC = 100 A 0 100 IC = 1.0 mA 0.1 Figure 7. 0.2 0.4 1.0 2.0 4.0 10 20 Rg, SOURCE RESISTANCE (k OHMS) Figure 8. http://onsemi.com 595 40 100 MMBT3906LT1 h PARAMETERS (VCE = -10 Vdc, f = 1.0 kHz, TA = 25C) 100 hoe, OUTPUT ADMITTANCE ( mhos) h fe , DC CURRENT GAIN 300 200 100 70 50 70 50 30 20 10 7 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5 5.0 7.0 10 0.1 0.2 Figure 9. Current Gain h re , VOLTAGE FEEDBACK RATIO (X 10 -4 ) h ie , INPUT IMPEDANCE (k OHMS) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 Figure 10. Output Admittance 20 0.3 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 5.0 7.0 10 0.1 0.2 Figure 11. Input Impedance 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 Figure 12. Voltage Feedback Ratio h FE, DC CURRENT GAIN (NORMALIZED) TYPICAL STATIC CHARACTERISTICS 2.0 TJ = +125C VCE = 1.0 V +25C 1.0 0.7 -55C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) Figure 13. DC Current Gain http://onsemi.com 596 20 30 50 70 100 200 VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) MMBT3906LT1 1.0 TJ = 25C 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 IB, BASE CURRENT (mA) 0.7 1.0 2.0 3.0 5.0 7.0 10 1.0 TJ = 25C V, VOLTAGE (VOLTS) 0.8 V , TEMPERATURE COEFFICIENTS (mV/ C) Figure 14. Collector Saturation Region VBE(sat) @ IC/IB = 10 VBE @ VCE = 1.0 V 0.6 0.4 VCE(sat) @ IC/IB = 10 0.2 0 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 1.0 0.5 VC FOR VCE(sat) 0 +25C TO +125C -55C TO +25C -0.5 +25C TO +125C -1.0 -55C TO +25C VB FOR VBE(sat) -1.5 -2.0 0 Figure 15. "ON" Voltages 20 40 60 80 100 120 140 IC, COLLECTOR CURRENT (mA) 160 Figure 16. Temperature Coefficients http://onsemi.com 597 180 200 MMBT3906TT1 General Purpose Transistors MMBT3906TT1 - PNP Silicon This transistor is designed for general purpose amplifier applications. It is housed in the SOT-416/SC-75 package which is designed for low power surface mount applications. * Device Marking: http://onsemi.com GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT MMBT3906TT1 = 2A MAXIMUM RATINGS (TA = 25C) MMBT3906TT1 Symbol Value Unit Collector-Emitter Voltage VCEO -40 Vdc Collector-Base Voltage VCBO -40 Vdc Emitter-Base Voltage VEBO -5.0 Vdc IC -200 mAdc Rating Collector Current - Continuous COLLECTOR 3 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation, FR-4 Board (1) TA = 25C Derated above 25C PD Thermal Resistance, Junction to Ambient (1) RJA Total Device Dissipation, FR-4 Board (2) TA = 25C Derated above 25C PD Thermal Resistance, Junction to Ambient (2) Junction and Storage Temperature Range Max Unit 200 mW 1.6 mW/C 600 C/W 3 300 mW 2.4 mW/C RJA 400 C/W TJ, Tstg -55 to +150 C 2 1 CASE 463 SOT-416/SC-75 STYLE 1 DEVICE MARKING (1) FR-4 @ Minimum Pad (2) FR-4 @ 1.0 x 1.0 Inch Pad See Table ORDERING INFORMATION Semiconductor Components Industries, LLC, 2001 October, 2001 - Rev. 0 598 Device Package Shipping MMBT3906TT1 SOT-416 3000 / Tape & Reel Publication Order Number: MMBT3906TT1/D MMBT3906TT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max -40 - -40 - -5.0 - - -50 - -50 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (3) (IC = -1.0 mAdc, IB = 0) V(BR)CEO Collector-Base Breakdown Voltage (IC = -10 Adc, IE = 0) V(BR)CBO Emitter-Base Breakdown Voltage (IE = -10 Adc, IC = 0) V(BR)EBO Base Cutoff Current (VCE = -30 Vdc, VEB = -3.0 Vdc) IBL Collector Cutoff Current (VCE = -30 Vdc, VEB = -3.0 Vdc) ICEX Vdc Vdc Vdc nAdc nAdc ON CHARACTERISTICS (3) DC Current Gain (IC = -0.1 mAdc, VCE = -1.0 Vdc) (IC = -1.0 mAdc, VCE = -1.0 Vdc) (IC = -10 mAdc, VCE = -1.0 Vdc) (IC = -50 mAdc, VCE = -1.0 Vdc) (IC = -100 mAdc, VCE = -1.0 Vdc) hFE Collector-Emitter Saturation Voltage VCE(sat) - 60 80 100 60 30 Vdc (IC = -10 mAdc, IB = -1.0 mAdc) (IC = -50 mAdc, IB = -5.0 mAdc) Base-Emitter Saturation Voltage - - 300 - - - - -0.25 -0.4 -0.65 - -0.85 -0.95 VBE(sat) (IC = -10 mAdc, IB = -1.0 mAdc) (IC = -50 mAdc, IB = -5.0 mAdc) Vdc r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE (3) Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 1.0 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) 1.0 Figure 1. Normalized Thermal Response http://onsemi.com 599 10 100 1000 MMBT3906TT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (IC = -10 mAdc, VCE = -20 Vdc, f = 100 MHz) fT Output Capacitance (VCB = -5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo Input Capacitance1 (VEB = -0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo Input Impedance (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) hie Voltage Feedback Ratio (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) hre Small-Signal Current Gain (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) hfe Output Admittance (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) hoe Noise Figure (VCE = -5.0 Vdc, IC = -100 Adc, RS = 1.0 k , f = 1.0 kHz) NF MHz 250 - - 4.5 - 10.0 2.0 12 0.1 10 100 400 3.0 60 - 4.0 pF pF k X 10-4 - mhos dB SWITCHING CHARACTERISTICS Delay Time (VCC = -3.0 Vdc, VBE = 0.5 Vdc) td - 35 Rise Time (IC = -10 mAdc, IB1 = -1.0 mAdc) tr - 35 Storage Time (VCC = -3.0 Vdc, IC = -10 mAdc) ts - 225 Fall Time (IB1 = IB2 = -1.0 mAdc) tf - 75 3V 275 < 1 ns 10 k 275 10 k 0 CS < 4 pF* +10.6 V 300 ns 1N916 10 < t1 < 500 s DUTY CYCLE = 2% DUTY CYCLE = 2% ns 3V < 1 ns +9.1 V ns t1 CS < 4 pF* 10.9 V * Total shunt capacitance of test jig and connectors Figure 2. Delay and Rise Time Equivalent Test Circuit Figure 3. Storage and Fall Time Equivalent Test Circuit http://onsemi.com 600 MMBT3906TT1 TYPICAL TRANSIENT CHARACTERISTICS 10 5000 7.0 3000 2000 5.0 Cobo Q, CHARGE (pC) CAPACITANCE (pF) TJ = 25C TJ = 125C Cibo 3.0 2.0 VCC = 40 V IC/IB = 10 QT 1000 700 500 300 200 QA 100 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 20 30 40 5.0 7.0 10 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) Figure 4. Capacitance Figure 5. Charge Data 200 500 IC/IB = 10 100 70 50 tr @ VCC = 3.0 V 15 V 30 20 40 V 2.0 V 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC/IB = 20 100 70 50 IC/IB = 10 30 20 10 7 5 td @ VOB = 0 V 1.0 VCC = 40 V IB1 = IB2 300 200 t f , FALL TIME (ns) 300 200 TIME (ns) 1.0 REVERSE BIAS VOLTAGE (VOLTS) 500 10 7 5 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 6. Turn-On Time Figure 7. Fall Time http://onsemi.com 601 200 MMBT3906TT1 TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = -5.0 Vdc, TA = 25C, Bandwidth = 1.0 Hz) 5.0 4.0 SOURCE RESISTANCE = 200 IC = 0.5 mA 3.0 SOURCE RESISTANCE = 2.0 k IC = 50 A 2.0 SOURCE RESISTANCE = 2.0 k IC = 100 A 1.0 0 0.1 0.2 0.4 1.0 2.0 4.0 10 f, FREQUENCY (kHz) f = 1.0 kHz IC = 1.0 mA 10 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 12 SOURCE RESISTANCE = 200 IC = 1.0 mA 20 40 IC = 0.5 mA 8.0 6.0 4.0 IC = 50 A 2.0 IC = 100 A 0 0.1 100 0.2 0.4 Figure 8. 1.0 2.0 4.0 10 20 RS, SOURCE RESISTANCE (k) 40 100 Figure 9. h PARAMETERS (VCE = -10 Vdc, f = 1.0 kHz, TA = 25C) 100 hoe, OUTPUT ADMITTANCE ( mhos) 300 hfe , CURRENT GAIN 200 100 70 50 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 70 50 30 20 10 7.0 5.0 5.0 7.0 10 0.1 0.2 20 10 10 7.0 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 5.0 7.0 10 Figure 11. Output Admittance h re , VOLTAGE FEEDBACK RATIO (X 10 -4 ) h ie , INPUT IMPEDANCE (k ) Figure 10. Current Gain 0.5 0.7 1.0 2.0 3.0 0.3 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 5.0 3.0 2.0 1.0 0.7 0.5 0.1 Figure 12. Input Impedance 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) Figure 13. Voltage Feedback Ratio http://onsemi.com 602 MMBT3906TT1 STATIC CHARACTERISTICS h FE, DC CURRENT GAIN (NORMALIZED) 2.0 TJ = +125C VCE = 1.0 V +25C 1.0 0.7 -55C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 20 30 50 70 100 200 VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 14. DC Current Gain 1.0 TJ = 25C 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 IB, BASE CURRENT (mA) 0.7 1.0 2.0 3.0 5.0 7.0 10 1.0 TJ = 25C V, VOLTAGE (VOLTS) 0.8 V, TEMPERATURE COEFFICIENTS (mV/C) Figure 15. Collector Saturation Region VBE(sat) @ IC/IB = 10 VBE @ VCE = 1.0 V 0.6 0.4 0.2 0 VCE(sat) @ IC/IB = 10 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 1.0 0.5 VC FOR VCE(sat) +25C TO +125C -55C TO +25C 0 -0.5 +25C TO +125C -1.0 VS FOR VBE(sat) -55C TO +25C -1.5 -2.0 0 Figure 16. "ON" Voltages 20 40 60 80 100 120 140 IC, COLLECTOR CURRENT (mA) 160 Figure 17. Temperature Coefficients http://onsemi.com 603 180 200 MMBT4124LT1 General Purpose Transistor NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc Emitter-Base Voltage VEBO 5.0 Vdc IC 200 mAdc Collector Current - Continuous COLLECTOR 3 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board (Note 1.) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate (Note 2.) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol Max Unit PD 225 mW 3 1.8 mW/C RJA 556 C/W PD 300 Watts 2.4 mW/C RJA 417 C/W TJ, Tstg -55 to +150 C SOT-23 (TO-236) CASE 318-08 STYLE 6 1 2 MARKING DIAGRAM ZC M 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. M = Date Code ORDERING INFORMATION Device MMBT4124LT1 Semiconductor Components Industries, LLC, 2001 October, 2001 - Rev. 0 604 Package Shipping SOT-23 3000 Tape & Reel Publication Order Number: MMBT4124LT1/D MMBT4124LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage (Note 3.) (IC = 1.0 mAdc, IE = 0) V(BR)CEO 25 - Vdc Collector-Base Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO 30 - Vdc Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO 5.0 - Vdc Collector Cutoff Current (VCB = 20 Vdc, IE = 0) ICBO - 50 nAdc Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) IEBO - 50 nAdc 120 60 360 - OFF CHARACTERISTICS ON CHARACTERISTICS DC Current Gain (Note 3.) (IC = 2.0 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) hFE - Collector-Emitter Saturation Voltage (Note 3.) (IC = 50 mAdc, IB = 5.0 mAdc) VCE(sat) - 0.3 Vdc Base-Emitter Saturation Voltage (Note 3.) (IC = 50 mAdc, IB = 5.0 mAdc) VBE(sat) - 0.95 Vdc fT 300 - MHz Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo - 8.0 pF Collector-Base Capacitance (IE = 0, VCB = 5.0 V, f = 1.0 MHz) Ccb - 4.0 pF Small-Signal Current Gain (IC = 2.0 mAdc, VCE = 10 Vdc, RS = 10 k ohm, f = 1.0 kHz) hfe 120 480 - Current Gain - High Frequency (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) (IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz) |hfe| 3.0 120 - 480 Noise Figure (IC = 100 Adc, VCE = 5.0 Vdc, RS = 1.0 k ohm, f = 1.0 kHz) NF - 5.0 SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) - dB 3. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%. 200 10 100 5.0 TIME (ns) CAPACITANCE (pF) 7.0 Cibo 3.0 ts 70 50 td 30 tf 20 Cobo 2.0 VCC = 3 V IC/IB = 10 VEB(off) = 0.5 V 10.0 7.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE BIAS VOLTAGE (VOLTS) 5.0 20 30 40 tr 1.0 Figure 1. Capacitance 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) Figure 2. Switching Times http://onsemi.com 605 200 MMBT4124LT1 AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE (VCE = 5 Vdc, TA = 25C) Bandwidth = 1.0 Hz 12 SOURCE RESISTANCE = 200 IC = 0.5 mA 8 6 SOURCE RESISTANCE = 1 k IC = 50 A 4 2 0 0.1 SOURCE RESISTANCE = 500 IC = 100 A 0.2 0.4 1 2 4 10 f, FREQUENCY (kHz) f = 1 kHz 12 NF, NOISE FIGURE (dB) 10 NF, NOISE FIGURE (dB) 14 SOURCE RESISTANCE = 200 IC = 1 mA IC = 1 mA IC = 0.5 mA 10 IC = 50 A 8 IC = 100 A 6 4 2 20 40 0 0.1 100 0.2 0.4 Figure 3. Frequency Variations 1.0 2.0 4.0 10 20 RS, SOURCE RESISTANCE (k) 40 100 5.0 10 5.0 10 Figure 4. Source Resistance h PARAMETERS (VCE = 10 V, f = 1 kHz, TA = 25C) 100 hoe, OUTPUT ADMITTANCE ( mhos) hfe , CURRENT GAIN 300 200 100 70 50 30 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) 5.0 50 20 10 5 2 1 10 0.1 0.2 Figure 5. Current Gain Figure 6. Output Admittance h re , VOLTAGE FEEDBACK RATIO (X 10-4 ) hie , INPUT IMPEDANCE (k ) 20 10 5.0 2.0 1.0 0.5 0.2 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) 5.0 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 10 0.1 Figure 7. Input Impedance 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) Figure 8. Voltage Feedback Ratio http://onsemi.com 606 MMBT4124LT1 STATIC CHARACTERISTICS h FE, DC CURRENT GAIN (NORMALIZED) 2.0 TJ = +125C 1.0 VCE = 1 V +25C 0.7 -55C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 20 30 50 70 100 200 VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 9. DC Current Gain 1.0 TJ = 25C 0.8 IC = 1 mA 30 mA 10 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 IB, BASE CURRENT (mA) 0.7 1.0 2.0 3.0 5.0 7.0 10 1.2 TJ = 25C V, VOLTAGE (VOLTS) 1.0 V, TEMPERATURE COEFFICIENTS (mV/C) Figure 10. Collector Saturation Region VBE(sat) @ IC/IB = 10 0.8 VBE @ VCE = 1 V 0.6 0.4 VCE(sat) @ IC/IB = 10 0.2 0 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT (mA) 100 200 1.0 0.5 +25C to +125C VC for VCE(sat) 0 -55C to +25C -0.5 -55C to +25C -1.0 +25C to +125C VB for VBE(sat) -1.5 -2.0 0 Figure 11. "On" Voltages 20 40 60 80 100 120 140 160 IC, COLLECTOR CURRENT (mA) Figure 12. Temperature Coefficients http://onsemi.com 607 180 200 ON Semiconductor Switching Transistor MMBT4401LT1 NPN Silicon ON Semiconductor Preferred Device 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 6.0 Vdc IC 600 mAdc Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W PD 300 mW 2.4 mW/C RJA 417 C/W TJ, Tstg -55 to +150 C Collector Current -- Continuous 2 CASE 318-08, STYLE 6 SOT-23 (TO-236AB) COLLECTOR 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 TA = 25C Derate above 25C Board(1) Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 1 BASE 2 EMITTER DEVICE MARKING MMBT4401LT1 = 2X ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max 40 -- 60 -- 6.0 -- -- 0.1 -- 0.1 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(3) (IC = 1.0 mAdc, IB = 0) V(BR)CEO Collector-Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) V(BR)EBO Base Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) IBEV Collector Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) ICEX Vdc Vdc Vdc Adc Adc 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 608 Publication Order Number: MMBT4401LT1/D MMBT4401LT1 ELECTRICAL CHARACTERISTICS (continued) (TA = 25C unless otherwise noted) Symbol Characteristic ON Min Max 20 40 80 100 40 -- -- -- 300 -- -- -- 0.4 0.75 0.75 -- 0.95 1.2 250 -- -- 6.5 -- 30 1.0 15 0.1 8.0 40 500 1.0 30 Unit CHARACTERISTICS(3) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 150 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc) hFE Collector-Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VCE(sat) Base-Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VBE(sat) -- Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) fT Collector-Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Ccb Emitter-Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Ceb Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hie Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hre Small-Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hoe MHz pF pF k X 10-4 -- mhos SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (VCC = 30 Vdc, VEB = 2.0 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) td -- 15 tr -- 20 (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) ts -- 225 tf -- 30 ns ns 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. SWITCHING TIME EQUIVALENT TEST CIRCUITS +30 V +30 V +16 V 0 -2.0 V 1.0 to 100 s, DUTY CYCLE 2.0% 200 +16 V 0 < 2.0 ns 1.0 k CS* < 10 pF -14 V 1.0 to 100 s, DUTY CYCLE 2.0% < 20 ns 1.0 k -4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope Figure 1. Turn-On Time Figure 2. Turn-Off Time http://onsemi.com 609 200 CS* < 10 pF MMBT4401LT1 TRANSIENT CHARACTERISTICS 25C 100C 10 7.0 5.0 30 20 3.0 Q, CHARGE (nC) CAPACITANCE (pF) Cobo 10 7.0 5.0 0.2 0.3 0.5 2.0 3.0 5.0 10 1.0 REVERSE VOLTAGE (VOLTS) 20 30 QT 2.0 1.0 0.7 0.5 0.3 0.2 Ccb 3.0 2.0 0.1 VCC = 30 V IC/IB = 10 0.1 50 QA 10 200 50 70 100 30 IC, COLLECTOR CURRENT (mA) 20 Figure 3. Capacitances 100 IC/IB = 10 70 70 t, TIME (ns) 20 t, TIME (ns) tr @ VCC = 30 V tr @ VCC = 10 V td @ VEB = 2.0 V td @ VEB = 0 30 30 10 7.0 7.0 20 30 50 70 200 100 300 5.0 500 tf 20 10 10 VCC = 30 V IC/IB = 10 tr 50 50 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Turn-On Time Figure 6. Rise and Fall Times 300 300 500 100 ts = ts - 1/8 tf IB1 = IB2 IC/IB = 10 to 20 VCC = 30 V IB1 = IB2 70 50 t f , FALL TIME (ns) 200 t s, STORAGE TIME (ns) 500 Figure 4. Charge Data 100 5.0 300 100 70 IC/IB = 20 30 20 IC/IB = 10 10 50 7.0 30 10 20 30 50 70 100 200 300 5.0 500 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. Storage Time Figure 8. Fall Time http://onsemi.com 610 300 500 MMBT4401LT1 SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VCE = 10 Vdc, TA = 25C; Bandwidth = 1.0 Hz 10 10 IC = 1.0 mA, RS = 150 IC = 500 A, RS = 200 IC = 100 A, RS = 2.0 k IC = 50 A, RS = 4.0 k 8.0 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 8.0 f = 1.0 kHz RS = OPTIMUM RS = SOURCE RS = RESISTANCE 6.0 4.0 2.0 IC = 50 A IC = 100 A IC = 500 A IC = 1.0 mA 6.0 4.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 f, FREQUENCY (kHz) 10 20 50 0 100 50 100 200 Figure 9. Frequency Effects obtain these curves, a high-gain and a low-gain unit were selected from the MMBT4401LT1 lines, and the same units were used to develop the correspondingly numbered curves on each graph. This group of graphs illustrates the relationship between hfe and other "h" parameters for this series of transistors. To 300 hfe , CURRENT GAIN 100 MMBT4401LT1 UNIT 1 MMBT4401LT1 UNIT 2 70 50 30 0.2 0.3 0.5 0.7 1.0 2.0 3.0 hie , INPUT IMPEDANCE (OHMS) 50k 200 MMBT4401LT1 UNIT 1 MMBT4401LT1 UNIT 2 20k 10k 5.0k 2.0k 1.0k 500 5.0 7.0 10 0.1 0.2 IC, COLLECTOR CURRENT (mA) Figure 11. Current Gain 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 Figure 12. Input Impedance 100 7.0 5.0 MMBT4401LT1 UNIT 1 MMBT4401LT1 UNIT 2 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.3 0.5 0.7 1.0 2.0 3.0 hoe, OUTPUT ADMITTANCE ( mhos) h re , VOLTAGE FEEDBACK RATIO (X 10 -4 ) 0.3 IC, COLLECTOR CURRENT (mA) 10 0.2 0.1 50k 100k Figure 10. Source Resistance Effects h PARAMETERS VCE = 10 Vdc, f = 1.0 kHz, TA = 25C 20 0.1 500 1.0k 2.0k 5.0k 10k 20k RS, SOURCE RESISTANCE (OHMS) 50 20 10 2.0 1.0 0.1 5.0 7.0 10 MMBT4401LT1 UNIT 1 MMBT4401LT1 UNIT 2 5.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 13. Voltage Feedback Ratio Figure 14. Output Admittance http://onsemi.com 611 5.0 7.0 10 MMBT4401LT1 STATIC CHARACTERISTICS h FE, NORMALIZED CURRENT GAIN 3.0 VCE = 1.0 V VCE = 10 V 2.0 TJ = 125C 1.0 25C 0.7 0.5 -55C 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA) 30 50 70 100 200 300 500 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 15. DC Current Gain 1.0 TJ = 25C 0.8 0.6 IC = 1.0 mA 10 mA 100 mA 500 mA 0.4 0.2 0 0.01 0.02 0.03 0.2 0.05 0.07 0.1 0.3 0.5 0.7 1.0 IB, BASE CURRENT (mA) 2.0 3.0 5.0 7.0 10 20 30 50 100 200 500 Figure 16. Collector Saturation Region +0.5 TJ = 25C VBE(sat) @ IC/IB = 10 VOLTAGE (VOLTS) 0.8 0.6 0 COEFFICIENT (mV/ C) 1.0 VBE @ VCE = 10 V 0.4 0.2 0 VCE(sat) @ IC/IB = 10 0.1 0.2 0.5 50 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) VC for VCE(sat) -0.5 -1.0 -1.5 -2.0 100 200 -2.5 0.1 0.2 500 Figure 17. "On" Voltages VB for VBE 0.5 50 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) Figure 18. Temperature Coefficients http://onsemi.com 612 ON Semiconductor Switching Transistor MMBT4403LT1 PNP Silicon 3 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO -40 Vdc Collector-Base Voltage VCBO -40 Vdc Emitter-Base Voltage VEBO -5.0 Vdc IC -600 mAdc Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W PD 300 mW 2.4 mW/C RJA 417 C/W TJ, Tstg -55 to +150 C Collector Current -- Continuous 2 CASE 318-08, STYLE 6 SOT-23 (TO-236) COLLECTOR 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 1 BASE 2 EMITTER DEVICE MARKING MMBT4403LT1 = 2T ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Characteristic Min Max -40 -- -40 -- -5.0 -- -- -0.1 -- -0.1 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(3) (IC = -1.0 mAdc, IB = 0) V(BR)CEO Collector-Base Breakdown Voltage (IC = -0.1 mAdc, IE = 0) V(BR)CBO Emitter-Base Breakdown Voltage (IE = -0.1 mAdc, IC = 0) V(BR)EBO Base Cutoff Current (VCE = -35 Vdc, VEB = -0.4 Vdc) IBEV Collector Cutoff Current (VCE = -35 Vdc, VEB = -0.4 Vdc) ICEX Vdc Vdc Vdc Adc Adc 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 613 Publication Order Number: MMBT4403LT1/D MMBT4403LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Characteristic Min Max Unit 30 60 100 100 20 -- -- -- 300 -- -- -- -0.4 -0.75 -0.75 -- -0.95 -1.3 200 -- -- 8.5 -- 30 1.5 15 0.1 8.0 60 500 1.0 100 ON CHARACTERISTICS DC Current Gain (IC = -0.1 mAdc, VCE = -1.0 Vdc) (IC = -1.0 mAdc, VCE = -1.0 Vdc) (IC = -10 mAdc, VCE = -1.0 Vdc) (IC = -150 mAdc, VCE = -2.0 Vdc)(3) (IC = -500 mAdc, VCE = -2.0 Vdc)(3) hFE Collector-Emitter Saturation Voltage(3) (IC = -150 mAdc, IB = -15 mAdc) (IC = -500 mAdc, IB = -50 mAdc) VCE(sat) Base-Emitter Saturation Voltage (3) (IC = -150 mAdc, IB = -15 mAdc) (IC = -500 mAdc, IB = -50 mAdc) VBE(sat) -- Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = -20 mAdc, VCE = -10 Vdc, f = 100 MHz) fT Collector-Base Capacitance (VCB = -10 Vdc, IE = 0, f = 1.0 MHz) Ccb Emitter-Base Capacitance (VBE = -0.5 Vdc, IC = 0, f = 1.0 MHz) Ceb Input Impedance (IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz) hie Voltage Feedback Ratio (IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz) hre Small-Signal Current Gain (IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz) hfe Output Admittance (IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz) hoe MHz pF pF k X 10-4 -- mhos SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (VCC = -30 30 Vdc, VEB = -2.0 2.0 Vdc, IC = -150 mAdc, IB1 = -15 mAdc) td -- 15 tr -- 20 (VCC = -30 30 Vdc, IC = -150 150 mAdc, IB1 = IB2 = -15 mAdc) ts -- 225 tf -- 30 ns ns 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. SWITCHING TIME EQUIVALENT TEST CIRCUIT -30 V -30 V +2 V 0 -16 V 200 < 2 ns +14 V 0 1.0 k 10 to 100 s, DUTY CYCLE = 2% 200 < 20 ns CS* < 10 pF 1.0 k -16 V 1.0 to 100 s, DUTY CYCLE = 2% +4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope Figure 1. Turn-On Time Figure 2. Turn-Off Time http://onsemi.com 614 CS* < 10 pF MMBT4403LT1 TRANSIENT CHARACTERISTICS 25C 100C 30 Ceb VCC = 30 V IC/IB = 10 3.0 Q, CHARGE (nC) CAPACITANCE (pF) 20 10 7.0 5.0 10 7.0 Ccb 5.0 2.0 1.0 0.7 0.5 QT 0.3 QA 0.2 2.0 0.1 0.2 0.3 20 2.0 3.0 5.0 7.0 10 0.5 0.7 1.0 REVERSE VOLTAGE (VOLTS) 0.1 30 10 20 200 30 50 70 100 IC, COLLECTOR CURRENT (mA) Figure 3. Capacitances 100 IC/IB = 10 70 70 VCC = 30 V IC/IB = 10 50 50 20 t r , RISE TIME (ns) tr @ VCC = 30 V tr @ VCC = 10 V td @ VBE(off) = 2 V td @ VBE(off) = 0 30 30 20 10 10 7.0 7.0 10 20 30 50 70 200 100 300 5.0 500 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Turn-On Time Figure 6. Rise Time 200 IC/IB = 10 t s, STORAGE TIME (ns) t, TIME (ns) 500 Figure 4. Charge Data 100 5.0 300 100 IC/IB = 20 70 50 IB1 = IB2 ts = ts - 1/8 tf 30 20 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) Figure 7. Storage Time http://onsemi.com 615 200 300 500 300 500 MMBT4403LT1 SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VCE = -10 Vdc, TA = 25C; Bandwidth = 1.0 Hz 10 10 8 8 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) f = 1 kHz IC = 1.0 mA, RS = 430 IC = 500 A, RS = 560 IC = 50 A, RS = 2.7 k IC = 100 A, RS = 1.6 k 6 4 2 6 4 2 RS = OPTIMUM SOURCE RESISTANCE 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 IC = 50 A 100 A 500 A 1.0 mA 0 100 50 2k 5k 10k 20k 50k 300 200 MMBT4403LT1 UNIT 1 MMBT4403LT1 UNIT 2 100 70 50 hie , INPUT IMPEDANCE (OHMS) 700 500 50k obtain these curves, a high-gain and a low-gain unit were selected from the MMBT4403LT1 lines, and the same units were used to develop the correspondingly-numbered curves on each graph. 100k MMBT4403LT1 UNIT 1 MMBT4403LT1 UNIT 2 20k 10k 5k 2k 1k 500 200 0.2 0.3 0.5 0.7 1.0 2.0 3.0 100 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc) Figure 10. Current Gain Figure 11. Input Impedance 20 5.0 7.0 10 500 10 MMBT4403LT1 UNIT 1 MMBT4403LT1 UNIT 2 5.0 2.0 1.0 0.5 0.2 0.2 0.3 0.5 0.7 1.0 2.0 3.0 hoe, OUTPUT ADMITTANCE ( mhos) hfe , CURRENT GAIN 1k Figure 9. Source Resistance Effects 1000 h re , VOLTAGE FEEDBACK RATIO (X 10 -4 ) 500 Figure 8. Frequency Effects This group of graphs illustrates the relationship between hfe and other "h" parameters for this series of transistors. To 0.1 0.1 200 RS, SOURCE RESISTANCE (OHMS) h PARAMETERS VCE = -10 Vdc, f = 1.0 kHz, TA = 25C 30 0.1 100 f, FREQUENCY (kHz) 100 50 20 5.0 2.0 1.0 0.1 5.0 7.0 10 MMBT4403LT1 UNIT 1 MMBT4403LT1 UNIT 2 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc) Figure 12. Voltage Feedback Ratio Figure 13. Output Admittance http://onsemi.com 616 5.0 7.0 10 MMBT4403LT1 STATIC CHARACTERISTICS h FE, NORMALIZED CURRENT GAIN 3.0 VCE = 1.0 V VCE = 10 V 2.0 TJ = 125C 25C 1.0 -55C 0.7 0.5 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA) 30 70 50 100 200 300 500 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 14. DC Current Gain 1.0 0.8 0.6 IC = 1.0 mA 10 mA 100 mA 500 mA 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (mA) 2.0 3.0 5.0 7.0 10 20 30 50 Figure 15. Collector Saturation Region 0.5 TJ = 25C 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(sat) @ VCE = 10 V 0 COEFFICIENT (mV/ C) VOLTAGE (VOLTS) 1.0 0.4 0.2 0.1 0.2 0.5 0.5 1.0 1.5 2.0 VCE(sat) @ IC/IB = 10 0 VC for VCE(sat) 50 100 200 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 2.5 0.1 0.2 500 Figure 16. "On" Voltages VS for VBE 0.5 50 100 200 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) Figure 17. Temperature Coefficients http://onsemi.com 617 500 MMBT489LT1 High Current Surface Mount NPN Silicon Switching Transistor for Load Management in Portable Applications http://onsemi.com 30 VOLTS 2.0 AMPS NPN TRANSISTOR MAXIMUM RATINGS (TA = 25C) Rating Symbol Max Unit Collector-Emitter Voltage VCEO 30 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage VEBO 5.0 Vdc IC 1.0 Vdc ICM 2.0 A Symbol Max Unit PD (Note 1.) 310 mW 2.5 mW/C RJA (Note 1.) 403 C/W PD (Note 2.) 710 mW 2 5.7 mW/C RJA (Note 2.) 176 C/W SOT-23 (TO-236) CASE 318-08 STYLE 6 Total Device Dissipation (Single Pulse < 10 sec.) PDsingle 575 mW Junction and Storage Temperature Range TJ, Tstg -55 to +150 C Collector Current - Continuous Collector Current - Peak COLLECTOR 3 1 BASE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient 2 EMITTER 3 1 DEVICE MARKING 3 1. FR-4 @ Minimum Pad 2. FR-4 @ 1.0 X 1.0 inch Pad N3 2 1 N3 = Specific Device Code ORDERING INFORMATION Device MMBT489LT1 Semiconductor Components Industries, LLC, 2001 August, 2001 - Rev. 2 618 Package Shipping SOT-23 3000/Tape & Reel Publication Order Number: MMBT489LT1/D MMBT489LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max 30 - 50 - 5.0 - - 0.1 - 0.1 - 0.1 300 300 200 - 900 - - - - 0.200 0.125 0.075 - 1.1 - 1.1 100 - - 15 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO Collector-Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 30 Vdc, IE = 0) ICBO Collector-Emitter Cutoff Current (VCES = 30 Vdc) ICES Emitter Cutoff Current (VEB = 4.0 Vdc) IEBO Vdc Vdc Vdc Adc Adc Adc ON CHARACTERISTICS DC Current Gain (Note 1.) (IC = 50 mA, VCE = 5.0 V) (IC = 0.5 A, VCE = 5.0 V) (IC = 1.0 A, VCE = 5.0 V) hFE Collector-Emitter Saturation Voltage (Note 1.) (IC = 1.0 A, IB = 100 mA) (IC = 0.5 A, IB = 50 mA) (IC = 0.1 A, IB = 1.0 mA) VCE(sat) Base-Emitter Saturation Voltage (Note 1.) (IC = 1.0 A, IB = 0.1 A) VBE(sat) Base-Emitter Turn-on Voltage (Note 1.) (IC = 1.0 mA, VCE = 2.0 V) VBE(on) Cutoff Frequency (IC = 100 mA, VCE = 5.0 V, f = 100 MHz V V V fT Output Capacitance (f = 1.0 MHz) MHz Cobo pF 1. Pulsed Condition: Pulse Width = 300 sec, Duty Cycle 2% 1.0 1.0 0.9 0.8 0.7 0.8 0.7 IC = 1 A 0.6 VCE (V) VCE (V) 0.9 IC = 2 A 0.5 0.4 0.3 0 0.5 Ic/Ib = 100 0.4 0.3 IC = 500 mA 0.2 0.1 0.6 0.1 IC = 100 mA 0.001 Ic/Ib = 10 0.2 0.01 Ib (A) 0.1 0 0.2 0.001 0.01 0.1 Ic (A) Figure 1. VCE versus Ib Figure 2. VCE versus Ic http://onsemi.com 619 1 2 MMBT489LT1 800 1.2 VCE = 5 V 700 VCE = 5 V +125C 1.0 600 0.8 VBE(on) (V) +25C hFE 500 400 300 -55C -55C +25C 0.6 0.4 +125C 200 0.2 100 0 0.001 0.01 0.1 1 0 2 0.001 0.01 Ic (A) Figure 3. hFE versus Ic 1 IC COLLECTOR CURRENT (A) 10 1.0 Ic/Ib = 10 0.8 Ic/Ib = 100 0.6 0.4 0.2 1 1 ms 10 ms 100 ms 0.1 1s SINGLE PULSE Tamb = 25C 0 2 Figure 4. VBE(on) versus Ic 1.2 VBE (V) 0.1 Ic (A) 0.001 0.01 0.1 1 0.01 2 0.1 1 Ic (A) 0.2 100 VCE (V) Figure 5. VBE(sat) versus Ic 0.5 dc 10 Figure 6. Safe Operating Area 0.1 1.0E+00 0.05 0.02 Rthja , (t) 1.0E-01 D = 0.01 1.0E-02 r(t) 1.0E-03 1E-05 0.0001 0.001 0.01 0.1 t, TIME (sec) 1.0 Figure 7. Normalized Thermal Response http://onsemi.com 620 10 100 1000 ON Semiconductor Low Noise Transistor MMBT5087LT1 PNP Silicon 3 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO -50 Vdc Collector-Base Voltage VCBO -50 Vdc Emitter-Base Voltage VEBO -3.0 Vdc IC -50 mAdc Collector Current -- Continuous CASE 318-08, STYLE 6 SOT-23 (TO-236) COLLECTOR 3 1 BASE DEVICE MARKING MMBT5087LT1 = 2Q 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W PD 300 mW 2.4 mW/C RJA 417 C/W TJ, Tstg -55 to +150 C ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC = -1.0 mAdc, IB = 0) V(BR)CEO -50 -- Vdc Collector-Base Breakdown Voltage (IC = -100 Adc, IE = 0) V(BR)CBO -50 -- Vdc -- -- -10 -50 OFF CHARACTERISTICS Collector Cutoff Current (VCB = -10 Vdc, IE = 0) (VCB = -35 Vdc, IE = 0) ICBO nAdc 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 621 Publication Order Number: MMBT5087LT1/D MMBT5087LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Characteristic Min Max 250 250 250 800 -- -- Unit ON CHARACTERISTICS DC Current Gain (IC = -100 Adc, VCE = -5.0 Vdc) (IC = -1.0 mAdc, VCE = -5.0 Vdc) (IC = -10 mAdc, VCE = -5.0 Vdc) hFE -- Collector-Emitter Saturation Voltage (IC = -10 mAdc, IB = -1.0 mAdc) VCE(sat) -- -0.3 Vdc Base-Emitter Saturation Voltage (IC = -10 mAdc, IB = -1.0 mAdc) VBE(sat) -- 0.85 Vdc fT 40 -- MHz Cobo -- 4.0 pF Small-Signal Current Gain (IC = -1.0 mAdc, VCE = -5.0 Vdc, f = 1.0 kHz) hfe 250 900 -- Noise Figure (IC = -20 mAdc, VCE = -5.0 Vdc, RS = 10 k, f = 1.0 kHz) (IC = -100 Adc, VCE = -5.0 Vdc, RS = 3.0 k, f = 1.0 kHz) NF -- -- 2.0 2.0 SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = -500 Adc, VCE = -5.0 Vdc, f = 20 MHz) Output Capacitance (VCB = -5.0 Vdc, IE = 0, f = 1.0 MHz) dB Figure 8. TYPICAL NOISE CHARACTERISTICS (VCE = -5.0 Vdc, TA = 25C) 10 7.0 IC = 10 A 5.0 In, NOISE CURRENT (pA) en, NOISE VOLTAGE (nV) 1.0 7.0 5.0 BANDWIDTH = 1.0 Hz RS 0 30 A 3.0 100 A 300 A 1.0 mA 2.0 IC = 1.0 mA 3.0 2.0 300 A 1.0 0.7 0.5 100 A 0.3 30 A 0.2 1.0 10 20 50 100 200 500 1.0k f, FREQUENCY (Hz) 2.0k 5.0k 10k BANDWIDTH = 1.0 Hz RS 0.1 10 A 10 Figure 1. Noise Voltage 20 50 100 200 500 1.0k 2.0k f, FREQUENCY (Hz) Figure 2. Noise Current http://onsemi.com 622 5.0k 10k MMBT5087LT1 NOISE FIGURE CONTOURS 1.0M 500k BANDWIDTH = 1.0 Hz BANDWIDTH = 1.0 Hz 200k 100k 50k 200k 100k 50k 20k 10k 0.5 dB 5.0k 1.0 dB 2.0k 1.0k 500 200 100 1.0M 500k RS , SOURCE RESISTANCE (OHMS) RS , SOURCE RESISTANCE (OHMS) (VCE = -5.0 Vdc, TA = 25C) 2.0 dB 3.0 dB 5.0 dB 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (A) 500 700 1.0k 20k 10k 0.5 dB 5.0k 1.0 dB 2.0k 1.0k 500 200 100 2.0 dB 3.0 dB 5.0 dB 10 20 RS , SOURCE RESISTANCE (OHMS) Figure 3. Narrow Band, 100 Hz 1.0M 500k 50 70 100 200 300 IC, COLLECTOR CURRENT (A) 500 700 1.0k Figure 4. Narrow Band, 1.0 kHz 10 Hz to 15.7 kHz 200k 100k 50k Noise Figure is Defined as: NF 20 log10 20k 10k 0.5 dB 5.0k 2.0k 1.0k 500 200 100 30 en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman's Constant (1.38 x 10-23 j/K) T = Temperature of the Source Resistance (K) RS = Source Resistance (Ohms) 1.0 dB 2.0 dB 3.0 dB 5.0 dB 10 20 30 50 70 100 200 300 2 2 1 2 S In RS en2 4KTR 4KTRS 500 700 1.0k IC, COLLECTOR CURRENT (A) Figure 5. Wideband http://onsemi.com 623 MMBT5087LT1 1.0 100 TA = 25C IC, COLLECTOR CURRENT (mA) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) TYPICAL STATIC CHARACTERISTICS 0.8 IC = 1.0 mA 0.6 10 mA 50 mA 100 mA 0.4 0.2 0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 5.0 10 TA = 25C PULSE WIDTH = 300 s 80 DUTY CYCLE 2.0% 300 A 200 A 150 A 40 100 A 20 50 A 0 5.0 10 15 20 25 30 35 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) TJ = 25C V, VOLTAGE (VOLTS) 1.2 1.0 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 0 VCE(sat) @ IC/IB = 10 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 40 Figure 7. Collector Characteristics V, TEMPERATURE COEFFICIENTS (mV/C) Figure 6. Collector Saturation Region 1.4 250 A 60 0 20 IB = 400 A 350 A 50 100 1.6 *APPLIES for IC/IB hFE/2 0.8 0 *VC for VCE(sat) 25C to 125C -55C to 25C 0.8 25C to 125C 1.6 2.4 0.1 Figure 8. "On" Voltages VB for VBE 0.2 -55C to 25C 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) Figure 9. Temperature Coefficients http://onsemi.com 624 50 100 MMBT5087LT1 TYPICAL DYNAMIC CHARACTERISTICS 500 300 200 200 100 70 50 30 tr 20 10 7.0 5.0 1.0 3.0 tf 30 td @ VBE(off) = 0.5 V 2.0 100 70 50 20 20 30 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 50 70 10 -1.0 100 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) Figure 10. Turn-On Time -50 -70 -100 Figure 11. Turn-Off Time 500 10 TJ = 25C VCE = 20 V 300 5.0 V 200 TJ = 25C 7.0 C, CAPACITANCE (pF) f, T CURRENT-GAIN BANDWIDTH PRODUCT (MHz) VCC = -3.0 V IC/IB = 10 IB1 = IB2 TJ = 25C ts 300 t, TIME (ns) t, TIME (ns) 1000 700 500 VCC = 3.0 V IC/IB = 10 TJ = 25C 100 Cib 5.0 3.0 2.0 Cob 70 50 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 1.0 0.05 50 0.1 0.2 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 12. Current-Gain -- Bandwidth Product Figure 13. Capacitance http://onsemi.com 625 10 20 50 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) MMBT5087LT1 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 FIGURE 16 0.05 P(pk) 0.02 0.03 0.02 t1 0.01 0.01 0.01 0.02 SINGLE PULSE 0.05 0.1 0.2 0.5 1.0 t2 2.0 5.0 10 20 50 t, TIME (ms) 100 200 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN569/D) ZJA(t) = r(t) * RJA TJ(pk) - TA = P(pk) ZJA(t) 500 1.0k 2.0k 5.0k 10k 20k 50k 100k Figure 14. Thermal Response IC, COLLECTOR CURRENT (nA) 104 103 DESIGN NOTE: USE OF THERMAL RESPONSE DATA VCC = 30 V ICEO 102 101 ICBO AND ICEX @ VBE(off) = 3.0 V 100 10-1 10-2 -40 -20 0 +20 +40 +60 +80 +100 +120 +140 +160 TJ, JUNCTION TEMPERATURE (C) Figure 15. Typical Collector Leakage Current A train of periodical power pulses can be represented by the model as shown in Figure 16. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 14 was calculated for various duty cycles. To find ZJA(t), multiply the value obtained from Figure 14 by the steady state value RJA. Example: Dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2) Using Figure 14 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore T = r(t) x P(pk) x RJA = 0.22 x 2.0 x 200 = 88C. For more information, see ON Semiconductor Application Note AN569/D, available from the Literature Distribution Center or on our website at www.onsemi.com. http://onsemi.com 626 ON Semiconductor MMBT5088LT1 MMBT5089LT1 Low Noise Transistors NPN Silicon MMBT5089LT1 is a Preferred Device 3 MAXIMUM RATINGS Rating 1 Symbol 5088LT1 5089LT1 Unit Collector-Emitter Voltage VCEO 30 25 Vdc Collector-Base Voltage VCBO 35 30 Vdc Emitter-Base Voltage VEBO 4.5 Vdc IC 50 mAdc Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W PD 300 mW 2.4 mW/C RJA 417 C/W TJ, Tstg -55 to +150 C Collector Current -- Continuous 2 CASE 318-08, STYLE 6 SOT-23 (TO-236AF) COLLECTOR 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 TA = 25C Derate above 25C Board(1) Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 1 BASE 2 EMITTER DEVICE MARKING MMBT5088LT1 = 1Q; MMBT5089LT1 = 1R ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max 30 25 -- -- 35 30 -- -- -- -- 50 50 -- -- 50 100 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO MMBT5088 MMBT5089 Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0) Vdc V(BR)CBO MMBT5088 MMBT5089 Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 15 Vdc, IE = 0) MMBT5088 MMBT5089 Emitter Cutoff Current (VEB(off) = 3.0 Vdc, IC = 0) (VEB(off) = 4.5 Vdc, IC = 0) MMBT5088 MMBT5089 Vdc ICBO nAdc IEBO nAdc 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 627 Publication Order Number: MMBT5088LT1/D MMBT5088LT1 MMBT5089LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Min Max MMBT5088 MMBT5089 300 400 900 1200 (IC = 1.0 mAdc, VCE = 5.0 Vdc) MMBT5088 MMBT5089 350 450 -- -- (IC = 10 mAdc, VCE = 5.0 Vdc) MMBT5088 MMBT5089 300 400 -- -- -- 0.5 -- 0.8 50 -- -- 4.0 -- 10 350 450 1400 1800 -- -- 3.0 2.0 Characteristic Unit ON CHARACTERISTICS DC Current Gain (IC = 100 Adc, VCE = 5.0 Vdc) hFE Collector-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) VCE(sat) Base-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) VBE(sat) -- Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 500 Adc, VCE = 5.0 Vdc, f = 20 MHz) fT Collector-Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz emitter guarded) Ccb Emitter-Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz collector guarded) Ceb Small Signal Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) MHz pF pF hfe MMBT5088 MMBT5089 Noise Figure (IC = 100 Adc, VCE = 5.0 Vdc, RS = 10 k, f = 1.0 kHz) RS NF MMBT5088 MMBT5089 in en -- IDEAL TRANSISTOR Figure 1. Transistor Noise Model http://onsemi.com 628 dB MMBT5088LT1 MMBT5089LT1 NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25C) NOISE VOLTAGE 30 IC = 10 mA BANDWIDTH = 1.0 Hz 20 RS 0 en , NOISE VOLTAGE (nV) 20 en , NOISE VOLTAGE (nV) 30 BANDWIDTH = 1.0 Hz 3.0 mA 10 1.0 mA 7.0 5.0 3.0 300 A 10 20 50 100 200 RS 0 f = 10 Hz 10 100 Hz 7.0 10 kHz 3.0 0.01 0.02 500 1k 2k 5k 10k 20k 50k 100k f, FREQUENCY (Hz) Figure 2. Effects of Frequency IC = 10 mA 2.0 1.0 mA 300 A 100 A 0.3 0.2 0.1 16 3.0 mA 1.0 0.7 0.5 RS 0 10 20 10 A 50 100 200 0.05 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) 5.0 10 20 BANDWIDTH = 1.0 Hz 3.0 100 kHz Figure 3. Effects of Collector Current NF, NOISE FIGURE (dB) In, NOISE CURRENT (pA) 10 7.0 5.0 1.0 kHz 5.0 BANDWIDTH = 10 Hz to 15.7 kHz 12 500 A 8.0 IC = 1.0 mA 100 A 10 A 4.0 30 A 0 10 500 1k 2k 5k 10k 20k 50k 100k f, FREQUENCY (Hz) 20 Figure 4. Noise Current 50 100 200 500 1k 2k 5k 10k 20k 50k 100k RS, SOURCE RESISTANCE (OHMS) Figure 5. Wideband Noise Figure 100 Hz NOISE DATA 20 BANDWIDTH = 1.0 Hz 100 A 100 70 50 3.0 mA 1.0 mA 30 300 A 20 10 7.0 5.0 3.0 IC = 10 mA NF, NOISE FIGURE (dB) VT, TOTAL NOISE VOLTAGE (nV) 300 200 30 A 10 A 10 20 16 IC = 10 mA 3.0 mA 1.0 mA 12 300 A 8.0 100 A 4.0 50 100 200 500 1k 2k 5k 10k 20k 50k 100k RS, SOURCE RESISTANCE (OHMS) 0 30 A 10 Figure 6. Total Noise Voltage 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k RS, SOURCE RESISTANCE (OHMS) Figure 7. Noise Figure http://onsemi.com 629 10 A BANDWIDTH = 1.0 Hz h FE, DC CURRENT GAIN (NORMALIZED) MMBT5088LT1 MMBT5089LT1 4.0 3.0 VCE = 5.0 V 2.0 TA = 125C 25C 1.0 -55C 0.7 0.5 0.4 0.3 0.2 0.01 0.02 0.03 0.05 0.1 1.0 0.2 0.3 0.5 IC, COLLECTOR CURRENT (mA) 2.0 3.0 5.0 10 Figure 8. DC Current Gain 1.0 -0.4 RVBE, BASE-EMITTER TEMPERATURE COEFFICIENT (mV/ C) TJ = 25C V, VOLTAGE (VOLTS) 0.8 0.6 VBE @ VCE = 5.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 -0.8 -1.2 TJ = 25C to 125C -1.6 -2.0 -55C to 25C -2.4 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 100 8.0 C, CAPACITANCE (pF) 6.0 TJ = 25C Cob 4.0 3.0 Ceb Cib Ccb 2.0 1.0 0.8 0.1 0.2 1.0 2.0 5.0 0.5 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 Figure 9. Temperature Coefficients 50 100 f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) Figure 11. "On" Voltages 20 Figure 12. Capacitance 500 300 200 100 VCE = 5.0 V TJ = 25C 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 10. Current-Gain -- Bandwidth Product http://onsemi.com 630 ON Semiconductor High Voltage Transistor MMBT5401LT1 PNP Silicon ON Semiconductor Preferred Device 3 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector-Emitter Voltage VCEO -150 Vdc Collector-Base Voltage VCBO -160 Vdc Emitter-Base Voltage VEBO -5.0 Vdc IC -500 mAdc Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W PD 300 mW 2.4 mW/C RJA 417 C/W TJ, Tstg -55 to +150 C Collector Current -- Continuous CASE 318-08, STYLE 6 SOT-23 (TO-236AF) COLLECTOR 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 1 BASE 2 EMITTER DEVICE MARKING MMBT5401LT1 = 2L ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max -150 -- -160 -- -5.0 -- -- -- -50 -50 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = -1.0 mAdc, IB = 0) V(BR)CEO Collector-Base Breakdown Voltage (IC = -100 Adc, IE = 0) V(BR)CBO Emitter-Base Breakdown Voltage (IE = -10 Adc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = -120 Vdc, IE = 0) (VCB = -120 Vdc, IE = 0, TA = 100C) Vdc Vdc Vdc ICES nAdc Adc 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 631 Publication Order Number: MMBT5401LT/D MMBT5401LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Characteristic Min Max 50 60 50 -- 240 -- -- -- -0.2 -0.5 -- -- -1.0 -1.0 100 300 -- 6.0 40 200 -- 8.0 Unit ON CHARACTERISTICS DC Current Gain (IC = -1.0 mAdc, VCE = -5.0 Vdc) (IC = -10 mAdc, VCE = -5.0 Vdc) (IC = -50 mAdc, VCE = -5.0 Vdc) hFE Collector-Emitter Saturation Voltage (IC = -10 mAdc, IB = -1.0 mAdc) (IC = -50 mAdc, IB = -5.0 mAdc) VCE(sat) Base-Emitter Saturation Voltage (IC = -10 mAdc, IB = -1.0 mAdc) (IC = -50 mAdc, IB = -5.0 mAdc) VBE(sat) -- Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = -10 mAdc, VCE = -10 Vdc, f = 100 MHz) fT Output Capacitance (VCB = -10 Vdc, IE = 0, f = 1.0 MHz) MHz Cobo Small Signal Current Gain (IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz) hfe Noise Figure (IC = -200 Adc, VCE = -5.0 Vdc, RS = 10 , f = 1.0 kHz) NF http://onsemi.com 632 pF -- dB MMBT5401LT1 200 h FE, CURRENT GAIN 150 TJ = 125C 100 25C 70 50 -55C VCE = -1.0 V VCE = -5.0 V 30 20 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 IC, COLLECTOR CURRENT (mA) 20 10 30 50 100 10 20 50 1.0 0.9 0.8 0.7 0.6 IC = 1.0 mA 0.5 10 mA 30 mA 100 mA 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (mA) 2.0 5.0 Figure 2. Collector Saturation Region 103 IC, COLLECTOR CURRENT (A) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain 102 VCE = 30 V IC = ICES 101 TJ = 125C 100 75C 10-1 10-2 REVERSE 25C 10-3 0.3 0.2 FORWARD 0.1 0 0.1 0.2 0.3 0.4 0.5 VBE, BASE-EMITTER VOLTAGE (VOLTS) Figure 3. Collector Cut-Off Region http://onsemi.com 633 0.6 0.7 MMBT5401LT1 1.0 V, TEMPERATURE COEFFICIENT (mV/ C) TJ = 25C 0.9 V, VOLTAGE (VOLTS) 0.8 0.7 VBE(sat) @ IC/IB = 10 0.6 0.5 0.4 0.3 0.2 VCE(sat) @ IC/IB = 10 0.1 0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100 2.5 TJ = -55C to 135C 2.0 1.5 1.0 0.5 VC for VCE(sat) 0 -0.5 -1.0 -1.5 VB for VBE(sat) -2.0 -2.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) Figure 4. "On" Voltages 100 Vin 0.25 F 10 s INPUT PULSE 100 70 50 3.0 k C, CAPACITANCE (pF) 10.2 V RC Vout RB 5.1 k tr, tf 10 ns DUTY CYCLE = 1.0% Vin TJ = 25C 30 Cibo 20 10 7.0 5.0 Cobo 3.0 1N914 100 2.0 1.0 0.2 Values Shown are for IC @ 10 mA 2.0 3.0 5.0 7.0 0.5 0.7 1.0 VR, REVERSE VOLTAGE (VOLTS) 0.3 Figure 6. Switching Time Test Circuit 1000 700 500 20 Figure 7. Capacitances tr @ VCC = 120 V 300 1000 700 500 tr @ VCC = 30 V 200 t, TIME (ns) t, TIME (ns) 10 2000 IC/IB = 10 TJ = 25C 100 70 50 td @ VBE(off) = 1.0 V VCC = 120 V 20 1.0 2.0 3.0 5.0 10 20 30 IC/IB = 10 TJ = 25C 300 tf @ VCC = 120 V tf @ VCC = 30 V 200 ts @ VCC = 120 V 100 70 50 30 10 0.2 0.3 0.5 100 Figure 5. Temperature Coefficients VCC -30 V VBB +8.8 V 50 30 50 100 20 0.2 0.3 0.5 200 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 8. Turn-On Time Figure 9. Turn-Off Time http://onsemi.com 634 50 100 200 ON Semiconductor MMBT5550LT1 MMBT5551LT1 High Voltage Transistors NPN Silicon MMBT5551LT1 is a Preferred Device 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 140 Vdc Collector-Base Voltage VCBO 160 Vdc Emitter-Base Voltage VEBO 6.0 Vdc IC 600 mAdc Collector Current -- Continuous 1 2 CASE 318-08, STYLE 6 SOT-23 (TO-236) COLLECTOR 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 TA = 25C Derate above 25C Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W PD 300 mW 2.4 mW/C RJA 417 C/W TJ, Tstg -55 to +150 C Board(1) Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 1 BASE 2 EMITTER DEVICE MARKING MMBT5550LT1 = M1F; MMBT5551LT1 = G1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max 140 160 -- -- 160 180 -- -- 6.0 -- -- -- -- -- 100 50 100 50 -- 50 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(3) (IC = 1.0 mAdc, IB = 0) V(BR)CEO MMBT5550 MMBT5551 Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0) Vdc V(BR)CBO MMBT5550 MMBT5551 Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) Vdc V(BR)EBO Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCB = 120 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0, TA = 100C) (VCB = 120 Vdc, IE = 0, TA = 100C) Vdc ICBO MMBT5550 MMBT5551 MMBT5550 MMBT5551 Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) IEBO nAdc Adc nAdc 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 635 Publication Order Number: MMBT5550LT1/D MMBT5550LT1 MMBT5551LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Min Max MMBT5550 MMBT5551 60 80 -- -- (IC = 10 mAdc, VCE = 5.0 Vdc) MMBT5550 MMBT5551 60 80 250 250 (IC = 50 mAdc, VCE = 5.0 Vdc) MMBT5550 MMBT5551 20 30 -- -- Both Types -- 0.15 MMBT5550 MMBT5551 -- -- 0.25 0.20 Both Types -- 1.0 MMBT5550 MMBT5551 -- -- 1.2 1.0 Characteristic Unit ON CHARACTERISTICS DC Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc) hFE Collector-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) -- VCE(sat) (IC = 50 mAdc, IB = 5.0 mAdc) Base-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) Vdc VBE(sat) (IC = 50 mAdc, IB = 5.0 mAdc) Figure 10. http://onsemi.com 636 Vdc MMBT5550LT1 MMBT5551LT1 500 h FE, DC CURRENT GAIN 300 VCE = 1.0 V VCE = 5.0 V TJ = 125C 200 25C 100 -55C 50 30 20 10 7.0 5.0 0.1 0.2 0.3 0.5 0.7 1.0 3.0 2.0 5.0 7.0 IC, COLLECTOR CURRENT (mA) 10 20 30 50 70 100 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain 1.0 0.9 0.8 0.7 0.6 IC = 1.0 mA 10 mA 100 mA 30 mA 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (mA) 2.0 5.0 10 20 50 Figure 2. Collector Saturation Region 100 10-1 1.0 0.8 TJ = 125C 10-2 IC = ICES 75C REVERSE 10-3 FORWARD 25C 10-4 10-5 0.4 TJ = 25C VCE = 30 V V, VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (A) 101 VBE(sat) @ IC/IB = 10 0.6 0.4 0.2 VCE(sat) @ IC/IB = 10 0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) 0.5 0.6 0 0.1 Figure 3. Collector Cut-Off Region 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) Figure 4. "On" Voltages http://onsemi.com 637 50 100 V, TEMPERATURE COEFFICIENT (mV/ C) MMBT5550LT1 MMBT5551LT1 2.5 2.0 TJ = -55C to +135C 1.5 1.0 0.5 Vin 0 -0.5 -1.0 tr, tf 10 ns DUTY CYCLE = 1.0% -2.0 -2.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100 Vout 5.1 k 100 Vin 1N914 200 t, TIME (ns) 20 10 Cibo Cobo 3.0 IC/IB = 10 TJ = 25C 500 300 tr @ VCC = 120 V tr @ VCC = 30 V 100 50 td @ VEB(off) = 1.0 V 30 VCC = 120 V 20 2.0 0.3 0.5 0.7 1.0 3.0 2.0 5.0 7.0 10 10 0.2 0.3 0.5 20 VR, REVERSE VOLTAGE (VOLTS) 20 30 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (mA) Figure 7. Capacitances Figure 8. Turn-On Time 5000 1.0 tf @ VCC = 120 V 3000 2000 IC/IB = 10 TJ = 25C tf @ VCC = 30 V 1000 t, TIME (ns) C, CAPACITANCE (pF) RB 1000 TJ = 25C 7.0 5.0 500 300 200 ts @ VCC = 120 V 100 50 0.2 0.3 0.5 RC Figure 6. Switching Time Test Circuit 30 1.0 0.2 3.0 k Values Shown are for IC @ 10 mA Figure 5. Temperature Coefficients 100 70 50 VCC 30 V 100 0.25 F 10 s INPUT PULSE VB for VBE(sat) -1.5 VBB -8.8 V 10.2 V VC for VCE(sat) 20 30 50 1.0 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (mA) Figure 9. Turn-Off Time http://onsemi.com 638 100 200 50 100 200 ON Semiconductor High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications MMBT589LT1 30 VOLTS 2.0 AMPS PNP TRANSISTOR MAXIMUM RATINGS (TA = 25C) Rating Symbol Max Unit Collector-Emitter Voltage VCEO -30 Vdc Collector-Base Voltage VCBO -50 Vdc Emitter-Base Voltage VEBO -5.0 Vdc IC -1.0 Adc ICM -2.0 A Collector Current - Continuous Collector Current - Peak DEVICE MARKING 3 1 2 CASE 318-08, STYLE 6 SOT-23 (TO-236AB) MMBT589LT1 = G3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation (Single Pulse < 10 sec.) Junction and Storage Temperature Symbol Max Unit PD (1) 310 mW 2.5 mW/C 403 C/W 710 mW 5.7 mW/C 176 C/W RJA (1) PD (2) RJA (2) PDsingle (3) mW 575 TJ, Tstg -55 to +150 C 1. FR-4 @ Minimum Pad 2. FR-4 @ 1.0 X 1.0 inch Pad 3. ref: Figure 8 Semiconductor Components Industries, LLC, 2001 August, 2001 - Rev. 1 639 Publication Order Number: MMBT589LT1/D MMBT589LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max -30 - -50 - -5.0 - - -0.1 - -0.1 - -0.1 100 100 80 40 - 300 - - - - - -0.25 -0.30 -0.65 - -1.2 - -1.1 100 - - 15 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = -10 mAdc, IB = 0) V(BR)CEO Collector-Base Breakdown Voltage (IC = -0.1 mAdc, IE = 0) V(BR)CBO Emitter-Base Breakdown Voltage (IE = -0.1 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = -30 Vdc, IE = 0) ICBO Collector-Emitter Cutoff Current (VCES = -30 Vdc) ICES Emitter Cutoff Current (VEB = -4.0 Vdc) IEBO Vdc Vdc Vdc Adc Adc Adc ON CHARACTERISTICS DC Current Gain (1) (Figure 1) (IC = -1.0 mA, VCE = -2.0 V) (IC = -500 mA, VCE = -2.0 V) (IC = -1.0 A, VCE = -2.0 V) (IC = 2.0 A, VCE = -2.0 V) hFE Collector-Emitter Saturation Voltage (1) (Figure 3) (IC = -0.5 A, IB = -0.05 A) (IC = -1.0 A, IB = 0.1 A) (IC = -2.0 A, IB = -0.2 A) VCE(sat) Base-Emitter Saturation Voltage (1) (Figure 2) (IC = -1.0 A, IB = -0.1 A) VBE(sat) Base-Emitter Turn-on Voltage (1) (IC = -1.0 A, VCE = -2.0 V) VBE(on) Cutoff Frequency (IC = -100 mA, VCE = -5.0 V, f = 100 MHz) V V V fT Output Capacitance (f = 1.0 MHz) Cobo 1. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2% http://onsemi.com 640 MHz pF MMBT589LT1 200 230 210 170 150 100 25C 130 110 50 90 -55C 70 0 0.01 0.001 0.1 1.0 50 10 Figure 2. DC Current Gain versus Collector Current 1.0 VBE(sat) , BASE EMITTER SATURATION VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1000 Figure 1. DC Current Gain versus Collector Current VBE(sat) 0.8 0.7 VBE(on) 0.6 0.5 0.4 0.3 0.2 0.1 VCE(sat) 1.0 100 10 1000 IC/IB = 100 0.7 0.65 0.6 0.55 0.5 VCE(sat) , COLLECTOR EMITTER SATURATION VOLTAGE (VOLTS) 0.4 100 mA 50 mA 0.1 0.8 0.75 0.001 0.01 0.1 1.0 10 Figure 4. Base Emitter Saturation Voltage versus Collector Current 1000 mA 0.01 IC/IB = 10 Figure 3. "On" Voltages 0.6 10 mA 0.9 0.85 IC, COLLECTOR CURRENT (AMPS) 0.8 0.2 0.95 IC, COLLECTOR CURRENT (mA) 1.0 0 100 IC, COLLECTOR CURRENT (mA) 0.9 0 10 1.0 IC, COLLECTOR CURRENT (AMPS) 1.0 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE = -1.0 V 125C 190 150 h FE , DC CURRENT GAIN h FE , DC CURRENT GAIN VCE = -2.0 V 1.0 10 100 1000 1.8 1.6 IC/IB = 100 1.4 1.2 1.0 0.8 0.6 IC/IB = 10 0.4 0.2 0 0.001 0.01 0.1 1.0 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (AMPS) Figure 5. Collector Emitter Saturation Voltage versus Collector Current Figure 6. Collector Emitter Saturation Voltage versus Collector Current http://onsemi.com 641 10 MMBT589LT1 IC , COLLECTOR CURRENT (AMPS) 10 SINGLE PULSE TEST AT Tamb = 25C 1s 1.0 100 ms 10 ms 1 ms 100 s 2s 0.1 0.01 0.1 1.0 10 VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 100 Figure 7. Safe Operating Area 0.5 0.2 0.1 1.0E+00 0.05 0.02 Rthja , (t) 1.0E-01 D = 0.01 1.0E-02 r(t) 1.0E-03 1E-05 0.0001 0.001 0.01 0.1 t, TIME (sec) 1.0 Figure 8. Normalized Thermal Response http://onsemi.com 642 10 100 1000 ON Semiconductor MMBT6428LT1 MMBT6429LT1 Amplifier Transistors NPN Silicon 3 MAXIMUM RATINGS 1 Rating 2 Symbol 6428LT1 6429LT1 Unit Collector-Emitter Voltage VCEO 50 45 Vdc Collector-Base Voltage VCBO 60 55 Vdc Emitter-Base Voltage VEBO 6.0 Vdc IC 200 mAdc Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W PD 300 mW 2.4 mW/C RJA 417 C/W TJ, Tstg -55 to +150 C Collector Current -- Continuous CASE 318-08, STYLE 6 SOT-23 (TO-236) COLLECTOR 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 TA = 25C Derate above 25C Board(1) Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 1 BASE 2 EMITTER DEVICE MARKING MMBT6428LT1 = 1KM; MMBT6429LT1 = 1L ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max 50 45 -- -- 60 55 -- -- -- 0.1 -- 0.01 -- 0.01 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) (IC = 1.0 mAdc, IB = 0) MMBT6428 MMBT6429 V(BR)CEO Collector-Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) (IC = 0.1 mAdc, IE = 0) MMBT6428 MMBT6429 Vdc V(BR)CBO Collector Cutoff Current (VCE = 30 Vdc) ICES Collector Cutoff Current (VCB = 30 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) IEBO Vdc Adc Adc Adc 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 643 Publication Order Number: MMBT6428LT1/D MMBT6428LT1 MMBT6429LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Min Max MMBT6428 MMBT6429 250 500 -- -- (IC = 0.1 mAdc, VCE = 5.0 Vdc) MMBT6428 MMBT6429 250 500 650 1250 (IC = 1.0 mAdc, VCE = 5.0 Vdc) MMBT6428 MMBT6429 250 500 -- -- (IC = 10 mAdc, VCE = 5.0 Vdc) MMBT6428 MMBT6429 250 500 -- -- -- -- 0.2 0.6 0.56 0.66 100 700 -- 3.0 -- 8.0 Characteristic Unit ON CHARACTERISTICS DC Current Gain (IC = 0.01 mAdc, VCE = 5.0 Vdc) hFE Collector-Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) (IC = 100 mAdc, IB = 5.0 mAdc) VCE(sat) Base-Emitter On Voltage (IC = 1.0 mAdc, VCE = 5.0 mAdc) VBE(on) -- Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 100 MHz) fT Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model http://onsemi.com 644 MHz pF pF MMBT6428LT1 MMBT6429LT1 NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25C) NOISE VOLTAGE 30 IC = 10 mA BANDWIDTH = 1.0 Hz 20 RS 0 en , NOISE VOLTAGE (nV) 20 en , NOISE VOLTAGE (nV) 30 BANDWIDTH = 1.0 Hz 3.0 mA 10 1.0 mA 7.0 5.0 3.0 300 A 10 20 50 100 200 RS 0 f = 10 Hz 10 100 Hz 7.0 10 kHz 3.0 0.01 0.02 500 1k 2k 5k 10k 20k 50k 100k f, FREQUENCY (Hz) Figure 2. Effects of Frequency IC = 10 mA 2.0 1.0 mA 300 A 100 A 0.3 0.2 0.1 16 3.0 mA 1.0 0.7 0.5 RS 0 10 20 10 A 50 100 200 0.05 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) 5.0 10 20 BANDWIDTH = 1.0 Hz 3.0 100 kHz Figure 3. Effects of Collector Current NF, NOISE FIGURE (dB) In, NOISE CURRENT (pA) 10 7.0 5.0 1.0 kHz 5.0 BANDWIDTH = 10 Hz to 15.7 kHz 12 500 A 8.0 IC = 1.0 mA 100 A 10 A 4.0 30 A 0 10 500 1k 2k 5k 10k 20k 50k 100k f, FREQUENCY (Hz) 20 Figure 4. Noise Current 50 100 200 500 1k 2k 5k 10k 20k 50k 100k RS, SOURCE RESISTANCE (OHMS) Figure 5. Wideband Noise Figure 100 Hz NOISE DATA 20 BANDWIDTH = 1.0 Hz 100 A 100 70 50 3.0 mA 1.0 mA 30 300 A 20 10 7.0 5.0 3.0 IC = 10 mA NF, NOISE FIGURE (dB) VT, TOTAL NOISE VOLTAGE (nV) 300 200 30 A 10 A 10 20 16 IC = 10 mA 3.0 mA 1.0 mA 12 300 A 8.0 100 A 4.0 50 100 200 500 1k 2k 5k 10k 20k 50k 100k RS, SOURCE RESISTANCE (OHMS) 0 30 A 10 Figure 6. Total Noise Voltage 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k RS, SOURCE RESISTANCE (OHMS) Figure 7. Noise Figure http://onsemi.com 645 10 A BANDWIDTH = 1.0 Hz h FE, DC CURRENT GAIN (NORMALIZED) MMBT6428LT1 MMBT6429LT1 4.0 3.0 VCE = 5.0 V 2.0 TA = 125C 25C 1.0 -55C 0.7 0.5 0.4 0.3 0.2 0.01 0.02 0.03 0.05 0.1 1.0 0.2 0.3 0.5 IC, COLLECTOR CURRENT (mA) 2.0 3.0 5.0 10 Figure 8. DC Current Gain 1.0 -0.4 RVBE, BASE-EMITTER TEMPERATURE COEFFICIENT (mV/ C) TJ = 25C V, VOLTAGE (VOLTS) 0.8 0.6 VBE @ VCE = 5.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 -0.8 -1.2 TJ = 25C to 125C -1.6 -2.0 -55C to 25C -2.4 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 100 8.0 C, CAPACITANCE (pF) 6.0 TJ = 25C Cob 4.0 3.0 Ceb Cib Ccb 2.0 1.0 0.8 0.1 0.2 1.0 2.0 5.0 0.5 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 Figure 10. Temperature Coefficients 50 100 f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) Figure 9. "On" Voltages 20 Figure 11. Capacitance 500 300 200 100 VCE = 5.0 V TJ = 25C 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 12. Current-Gain -- Bandwidth Product http://onsemi.com 646 ON Semiconductor High Voltage Transistor MMBT6517LT1 NPN Silicon 3 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 350 Vdc Collector-Base Voltage VCBO 350 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Base Current IB 250 mAdc Collector Current -- Continuous IC 500 mAdc Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W PD 300 mW 2.4 mW/C RJA 417 C/W TJ, Tstg -55 to +150 C CASE 318-08, STYLE 6 SOT-23 (TO-236AB) COLLECTOR 3 1 BASE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 2 EMITTER DEVICE MARKING MMBT6517LT1 = 1Z ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max 350 -- 350 -- 6.0 -- -- 50 -- 50 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc) V(BR)CEO Collector-Base Breakdown Voltage (IC = 100 Adc) V(BR)CBO Emitter-Base Breakdown Voltage (IE = 10 Adc) V(BR)EBO Collector Cutoff Current (VCB = 250 Vdc) ICBO Emitter Cutoff Current (VEB = 5.0 Vdc) IEBO Vdc Vdc Vdc nAdc nAdc 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 647 Publication Order Number: MMBT6517LT1/D MMBT6517LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Characteristic Min Max 20 30 30 20 15 -- -- 200 200 -- -- -- -- -- 0.30 0.35 0.50 1.0 -- -- -- 0.75 0.85 0.90 -- 2.0 40 200 -- 6.0 -- 80 Unit ON CHARACTERISTICS DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 30 mAdc, VCE = 10 Vdc) (IC = 50 mAdc, VCE = 10 Vdc) (IC = 100 mAdc, VCE = 10 Vdc) hFE Collector-Emitter Saturation Voltage (3) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 20 mAdc, IB = 2.0 mAdc) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VCE(sat) Base-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 20 mAdc, IB = 2.0 mAdc) (IC = 30 mAdc, IB = 3.0 mAdc) VBE(sat) Base-Emitter On Voltage (IC = 100 mAdc, VCE = 10 Vdc) VBE(on) -- Vdc Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current Gain -- Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz) fT Collector-Base Capacitance (VCB = 20 Vdc, f = 1.0 MHz) Ccb Emitter-Base Capacitance (VEB = 0.5 Vdc, f = 1.0 MHz) Ceb 3. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%. Figure 13. http://onsemi.com 648 MHz pF pF hFE , DC CURRENT GAIN 200 TJ = 125C VCE = 10 V 100 25C 70 50 -55C 30 20 10 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 f, T CURRENT-GAIN BANDWIDTH PRODUCT (MHz) MMBT6517LT1 100 70 50 20 10 1.0 Figure 1. DC Current Gain TJ = 25C 1.0 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 10 V 2.5 1.5 VCE(sat) @ IC/IB = 5.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 0.5 0 RVC for VCE(sat) -55C to 25C 50 -2.0 -2.5 1.0 70 100 -55C to 125C RVB for VBE 2.0 Figure 3. "On" Voltages 100 70 50 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) Ceb 20 10 7.0 5.0 Ccb 3.0 2.0 1.0 0.2 0.5 50 Figure 4. Temperature Coefficients TJ = 25C 30 100 25C to 125C 1.0 -1.5 VCE(sat) @ IC/IB = 10 2.0 50 70 IC 10 IB 2.0 -1.0 0.2 0 1.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) -0.5 0.4 C, CAPACITANCE (pF) V, VOLTAGE (VOLTS) 1.2 2.0 Figure 2. Current-Gain -- Bandwidth Product RV, TEMPERATURE COEFFICIENTS (mV/C) 1.4 TJ = 25C VCE = 20 V f = 20 MHz 30 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Capacitance http://onsemi.com 649 50 100 200 70 100 MMBT6517LT1 1.0k 700 500 200 tr 100 70 50 2.0k 1.0k 700 500 30 300 20 200 10 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 ts 3.0k t, TIME (ns) t, TIME (ns) VCE(off) = 100 V IC/IB = 5.0 TJ = 25C td @ VBE(off) = 2.0 V 300 10k 7.0k 5.0k 100 1.0 70 100 VCE(off) = 100 V IC/IB = 5.0 IB1 = IB2 TJ = 25C tf 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 7. Turn-Off Time Figure 6. Turn-On Time +VCC VCC ADJUSTED FOR VCE(off) = 100 V +10.8 V 2.2 k 20 k 50 SAMPLING SCOPE 1.0 k 50 1/2MSD7000 -9.2 V PULSE WIDTH 100 s tr, tf 5.0 ns DUTY CYCLE 1.0% FOR PNP TEST CIRCUIT, REVERSE ALL VOLTAGE POLARITIES APPROXIMATELY -1.35 V (ADJUST FOR V(BE)off = 2.0 V) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 8. Switching Time Test Circuit 1.0 0.7 0.5 0.3 D = 0.5 0.2 0.2 0.1 0.07 0.05 0.1 P(pk) RJC(t) = r(t) RJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) SINGLE PULSE 0.03 t1 ZJC(t) = r(t) * RJC ZJA(t) = r(t) * RJA 0.02 0.01 0.1 SINGLE PULSE 0.05 0.2 0.5 1.0 t2 DUTY CYCLE, D = t1/t2 2.0 5.0 10 20 50 t, TIME (ms) 100 Figure 9. Thermal Response http://onsemi.com 650 200 500 1.0k 2.0k 5.0k 10k ON Semiconductor High Voltage Transistor MMBT6520LT1 PNP Silicon 3 1 2 CASE 318-08, STYLE 6 SOT-23 (TO-236AF) MAXIMUM RATINGS Rating COLLECTOR 3 Symbol Value Unit Collector-Emitter Voltage VCEO -350 Vdc Collector-Base Voltage VCBO -350 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Base Current IB -250 mA Collector Current -- Continuous IC -500 mAdc Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W PD 300 mW 2.4 mW/C RJA 417 C/W TJ, Tstg -55 to +150 C 1 BASE 2 EMITTER DEVICE MARKING MMBT6520LT1 = 2Z THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC = -1.0 mA) V(BR)CEO -350 -- Vdc Collector-Base Breakdown Voltage (IC = -100 A) V(BR)CBO -350 -- Vdc Emitter-Base Breakdown Voltage (IE = -10 A) V(BR)EBO -5.0 -- Vdc Collector Cutoff Current (VCB = -250 V) ICBO -- -50 nA Emitter Cutoff Current (VEB = -4.0 V) IEBO -- -50 nA Characteristic OFF CHARACTERISTICS 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 651 Publication Order Number: MMBT6520LT1/D MMBT6520LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Characteristic Min Max 20 30 30 20 15 -- -- 200 200 -- -- -- -- -- -0.30 -0.35 -0.50 -1.0 -- -- -- -0.75 -0.85 -0.90 Unit ON CHARACTERISTICS DC Current Gain (IC = -1.0 mA, VCE = -10 V) (IC = -10 mA, VCE = -10 V) (IC = -30 mA, VCE = -10 V) (IC = -50 mA, VCE = -10 V) (IC = -100 mA, VCE = -10 V) hFE -- Collector-Emitter Saturation Voltage (IC = -10 mA, IB = -1.0 mA) (IC = -20 mA, IB = -2.0 mA) (IC = -30 mA, IB = -3.0 mA) (IC = -50 mA, IB = -5.0 mA) VCE(sat) Vdc Base-Emitter Saturation Voltage (IC = -10 mA, IB = -1.0 mA) (IC = -20 mA, IB = -2.0 mA) (IC = -30 mA, IB = -3.0 mA) VBE(sat) Base-Emitter On Voltage (IC = -100 mA, VCE = -10 V) VBE(on) -- -2.0 Vdc fT 40 200 MHz Collector-Base Capacitance (VCB= -20 V, f = 1.0 MHz) Ccb -- 6.0 pF Emitter-Base Capacitance (VEB= -0.5 V, f = 1.0 MHz) Ceb -- 100 pF Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = -10 mA, VCE = -20 V, f = 20 MHz) http://onsemi.com 652 hFE, DC CURRENT GAIN 200 VCE = 10 V f, T CURRENT-GAIN BANDWIDTH PRODUCT (MHz) MMBT6520LT1 TJ = 125C 100 25C 70 -55C 50 30 20 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 100 70 50 20 10 1.0 TJ = 25C V, VOLTAGE (VOLTS) 1.2 1.0 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 10 V 2.5 1.5 0.5 0 -2.0 VCE(sat) @ IC/IB = 5.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 -2.5 1.0 70 100 Figure 3. "On" Voltages RVC for VCE(sat) -55C to 25C Ceb Ccb 3.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) td @ VBE(off) = 2.0 V 300 20 10 7.0 5.0 2.0 1.0k 700 500 TJ = 25C 30 -55C to 125C RVB for VBE 50 70 100 Figure 4. Temperature Coefficients t, TIME (ns) C, CAPACITANCE (pF) 100 70 50 100 25C to 125C 1.0 -1.5 VCE(sat) @ IC/IB = 10 2.0 50 70 IC 10 IB 2.0 -1.0 0.2 200 VCE(off) = 100 V IC/IB = 5.0 TJ = 25C tr 100 70 50 30 20 2.0 1.0 0.2 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) -0.5 0.4 0 1.0 2.0 Figure 2. Current-Gain -- Bandwidth Product RV, TEMPERATURE COEFFICIENTS (mV/C) Figure 1. DC Current Gain 1.4 TJ = 25C VCE = 20 V f = 20 MHz 30 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 10 1.0 50 100 200 Figure 5. Capacitance 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) Figure 6. Turn-On Time http://onsemi.com 653 50 70 100 MMBT6520LT1 10k 7.0k 5.0k ts t, TIME (ns) 3.0k 2.0k 1.0k 700 500 VCE(off) = 100 V IC/IB = 5.0 IB1 = IB2 TJ = 25C tf 300 200 100 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 7. Turn-Off Time +VCC VCC ADJUSTED FOR VCE(off) = 100 V +10.8 V 2.2 k 20 k 50 SAMPLING SCOPE 1.0 k 50 1/2MSD7000 -9.2 V PULSE WIDTH 100 s tr, tf 5.0 ns DUTY CYCLE 1.0% FOR PNP TEST CIRCUIT, REVERSE ALL VOLTAGE POLARITIES APPROXIMATELY -1.35 V (ADJUST FOR V(BE)off = 2.0 V) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 8. Switching Time Test Circuit 1.0 0.7 0.5 0.3 D = 0.5 0.2 0.2 0.1 0.07 0.05 0.1 P(pk) RJC(t) = r(t) RJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) SINGLE PULSE t1 ZJC(t) = r(t) * RJC ZJA(t) = r(t) * RJA 0.03 0.02 0.01 0.1 SINGLE PULSE 0.05 0.2 0.5 1.0 t2 DUTY CYCLE, D = t1/t2 2.0 5.0 10 20 50 t, TIME (ms) 100 Figure 9. Thermal Response http://onsemi.com 654 200 500 1.0k 2.0k 5.0k 10k MMBT6589T1 High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications http://onsemi.com 30 VOLTS 2.0 AMPS PNP TRANSISTOR MAXIMUM RATINGS (TA = 25C) Rating Symbol Max Unit Collector-Emitter Voltage VCEO -30 Vdc Collector-Base Voltage VCBO -50 Vdc Emitter-Base Voltage VEBO -5.0 Vdc IC -1.0 Adc Collector Current - Peak ICM -2.0 A Electrostatic Discharge ESD Collector Current - Continuous COLLECTOR 1, 2, 5 3 BASE 6 EMITTER HBM Class 3 MM Class C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit PD (1) 540 mW 4.4 mW/C RJA (1) 230 C/W PD (2) 925 mW 7.4 mW/C RJA (2) 135 C/W PDsingle (2)(3) 1.3 W TJ, Tstg -55 to +150 C Total Device Dissipation TA = 25C Derate above 25C 4 Thermal Resistance, Junction to Ambient Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation (Single Pulse < 10 sec.) 3 Junction and Storage Temperature Range 5 2 1 6 CASE 318G TSOP-6 STYLE 7 DEVICE MARKING G3 (date code) (1) FR-4 @ Minimum Pad (2) FR-4 @ 1.0 X 1.0 inch Pad (3) ref: Figure 8 ORDERING INFORMATION Device MMBT6589T1 Semiconductor Components Industries, LLC, 2001 April, 2000 - Rev. 0 655 Package Shipping TSOP-6 3000/Tape & Reel Publication Order Number: MMBT6589T1/D MMBT6589T1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max -30 - -50 - -5.0 - - -0.1 - -0.1 - -0.1 100 100 80 40 - 300 - - - - - -0.25 -0.30 -0.65 - -1.2 - -1.1 100 - - 20 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = -10 mAdc, IB = 0) V(BR)CEO Collector-Base Breakdown Voltage (IC = -0.1 mAdc, IE = 0) V(BR)CBO Emitter-Base Breakdown Voltage (IE = -0.1 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = -30 Vdc, IE = 0) ICBO Collector-Emitter Cutoff Current (VCES = -30 Vdc) ICES Emitter Cutoff Current (VEB = -4.0 Vdc) IEBO Vdc Vdc Vdc Adc Adc Adc ON CHARACTERISTICS DC Current Gain (1) (Figure 1) (IC = -1.0 mA, VCE = -2.0 V) (IC = -500 mA, VCE = -2.0 V) (IC = -1.0 A, VCE = -2.0 V) (IC = 2.0 A, VCE = -2.0 V) hFE Collector-Emitter Saturation Voltage (1) (Figure 3) (IC = -0.5 A, IB = -0.05 A) (IC = -1.0 A, IB = 0.1 A) (IC = -2.0 A, IB = -0.2 A) VCE(sat) Base-Emitter Saturation Voltage (1) (Figure 2) (IC = -1.0 A, IB = -0.1 A) VBE(sat) Base-Emitter Turn-on Voltage (1) (IC = -1.0 A, VCE = -2.0 V) VBE(on) Cutoff Frequency (IC = -100 mA, VCE = -5.0 V, f = 100 MHz) V V V fT Output Capacitance (VCB = -5.0 V, f = 1.0 MHz) Cobo 1. Pulsed Condition: Pulse Width = 300 sec, Duty Cycle 2% http://onsemi.com 656 MHz pF MMBT6589T1 200 230 210 150 h FE , DC CURRENT GAIN h FE , DC CURRENT GAIN VCE = -2.0 V 100 50 190 170 150 25C 130 110 90 -55C 70 0 0.01 0.001 0.1 1.0 10 1000 Figure 2. DC Current Gain versus Collector Current 1.0 VBE(sat) , BASE EMITTER SATURATION VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 100 Figure 1. DC Current Gain versus Collector Current VBE(sat) 0.8 0.7 VBE(on) 0.6 0.5 0.4 0.3 0.2 0.1 VCE(sat) 1.0 100 10 1000 1000 mA 0.4 100 mA 50 mA 0.1 0.8 0.75 IC/IB = 100 0.7 0.65 0.6 0.55 0.5 0.001 0.01 0.1 1.0 10 Figure 4. Base Emitter Saturation Voltage versus Collector Current 0.6 0.01 IC/IB = 10 Figure 3. "On" Voltages 0.8 10 mA 0.9 0.85 IC, COLLECTOR CURRENT (AMPS) 1.0 0.2 0.95 IC, COLLECTOR CURRENT (mA) VCE(sat) , COLLECTOR EMITTER SATURATION VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 10 1.0 IC, COLLECTOR CURRENT (mA) 0.9 0 50 IC, COLLECTOR CURRENT (AMPS) 1.0 0 VCE = -1.0 V 125C 1.0 10 100 1000 1.8 1.6 IC/IB = 100 1.4 1.2 1.0 0.8 0.6 IC/IB = 10 0.4 0.2 0 0.001 0.01 0.1 1.0 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (AMPS) Figure 5. Collector Emitter Saturation Voltage versus Collector Current Figure 6. Collector Emitter Saturation Voltage versus Collector Current http://onsemi.com 657 10 MMBT6589T1 IC , COLLECTOR CURRENT (AMPS) 10 1 s 100 ms 10 ms 1 ms 100 s 1.0 DC 0.1 0.01 SINGLE PULSE AT Tamb = 25C 0.1 1.0 10 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE Figure 7. Safe Operating Area 1.0 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.001 0.01 SINGLE PULSE 0.00001 0.0001 0.001 0.01 0.1 t, TIME (sec) 1.0 Figure 8. Normalized Thermal Response http://onsemi.com 658 10 100 1000 ON Semiconductor VHF/UHF Transistor MMBT918LT1 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 15 Vdc Collector-Base Voltage VCBO 30 Vdc Emitter-Base Voltage VEBO 3.0 Vdc IC 50 mAdc Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W PD 300 mW 2.4 mW/C RJA 417 C/W TJ, Tstg -55 to +150 C Collector Current -- Continuous 3 1 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board,(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature CASE 318-08, STYLE 6 SOT-23 (TO-236) COLLECTOR 3 1 BASE DEVICE MARKING 2 EMITTER MMBT918LT1 = M3B ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC = 3.0 mAdc, IB = 0) V(BR)CEO 15 -- Vdc Collector-Base Breakdown Voltage (IC = 1.0 Adc, IE = 0) V(BR)CBO 30 -- Vdc Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO 3.0 -- Vdc ICBO -- 50 nAdc OFF CHARACTERISTICS Collector Cutoff Current (VCB = 15 Vdc, IE = 0) 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 659 Publication Order Number: MMBT918LT1/D MMBT918LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Min Max Unit hFE 20 -- -- Collector-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) VCE(sat) -- 0.4 Vdc Base-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) VBE(sat) -- 1.0 Vdc fT 600 -- MHz -- -- 3.0 1.7 Characteristic ON CHARACTERISTICS DC Current Gain (IC = 3.0 mAdc, VCE = 1.0 Vdc) SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 4.0 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 0 Vdc, IE = 0, f = 1.0 MHz) (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo -- 2.0 pF Noise Figure (IC = 1.0 mAdc, VCE = 6.0 Vdc, RS = 50 , f = 60 MHz) (Figure 1) NF -- 6.0 dB Power Output (IC = 8.0 mAdc, VCB = 15 Vdc, f = 500 MHz) Pout 30 -- mW Common-Emitter Amplifier Power Gain (IC = 6.0 mAdc, VCB = 12 Vdc, f = 200 MHz) Gpe 11 -- dB VCC VBB EXTERNAL 1000 pF BYPASS 100 k 0.018 F C 0.018 F 3 G 50 0.018 F 0.018 F NF TEST CONDITIONS IC = 1.0 mA VCE = 6.0 VOLTS RS = 50 f = 60 MHz Gpe TEST CONDITIONS IC = 6.0 mA VCE = 12 VOLTS f = 200 MHz Figure 1. NF, Gpe Measurement Circuit 20-200 http://onsemi.com 660 RF VM ON Semiconductor MMBTA05LT1 MMBTA06LT1 Driver Transistors NPN Silicon MMBTA06LT1 us a Preferred Device MAXIMUM RATINGS Rating Symbol MMBTA05 MMBTA06 Unit Collector-Emitter Voltage VCEO 60 80 Vdc Collector-Base Voltage VCBO 60 80 Vdc Emitter-Base Voltage VEBO 4.0 Vdc IC 500 mAdc Collector Current -- Continuous 3 1 2 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W PD 300 mW 2.4 mW/C RJA 417 C/W TJ, Tstg -55 to +150 C Total Device Dissipation FR-5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature CASE 318-08, STYLE 6 SOT-23 (TO-236) COLLECTOR 3 1 BASE 2 EMITTER DEVICE MARKING MMBTA05LT1 = 1H; MMBTA06LT1 = 1GM ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit 60 80 -- -- V(BR)EBO 4.0 -- Vdc ICES -- 0.1 Adc -- -- 0.1 0.1 OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (3) (IC = 1.0 mAdc, IB = 0) V(BR)CEO MMBTA05 MMBTA06 Emitter-Base Breakdown Voltage (IE = 100 Adc, IC = 0) Collector Cutoff Current (VCE = 60 Vdc, IB = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) Vdc Adc ICBO MMBTA05 MMBTA06 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 661 Publication Order Number: MMBTA55LT1/D MMBTA05LT1 MMBTA06LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Characteristic Min Max 100 100 -- -- Unit ON CHARACTERISTICS DC Current Gain (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) hFE -- Collector-Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) VCE(sat) -- 0.25 Vdc Base-Emitter On Voltage (IC = 100 mAdc, VCE = 1.0 Vdc) VBE(on) -- 1.2 Vdc fT 100 -- MHz SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product(4) (IC = 10 mA, VCE = 2.0 V, f = 100 MHz) 4. fT is defined as the frequency at which |hfe| extrapolates to unity. http://onsemi.com 662 ON Semiconductor MMBTA13LT1 MMBTA14LT1 Darlington Amplifier Transistors MMBTA14LT1 is a Preferred Device NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCES 30 Vdc Collector-Base Voltage VCBO 30 Vdc Emitter-Base Voltage VEBO 10 Vdc IC 300 mAdc Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W PD 300 mW 2.4 mW/C RJA 417 C/W TJ, Tstg -55 to +150 C Collector Current -- Continuous 3 1 2 CASE 318-08, STYLE 6 SOT-23 (TO-236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 TA = 25C Derate above 25C Board(1) Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature COLLECTOR 3 BASE 1 EMITTER 2 DEVICE MARKING MMBTA13LT1 = 1M; MMBTA14LT1 = 1N ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)CES 30 -- Vdc Collector Cutoff Current (VCB = 30 Vdc, IE = 0) ICBO -- 100 nAdc Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) IEBO -- 100 nAdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 100 Adc, VBE = 0) 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 663 Publication Order Number: MMBTA13LT1/D MMBTA13LT1 MMBTA14LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Min Max MMBTA13 MMBTA14 5000 10,000 -- -- MMBTA13 MMBTA14 10,000 20,000 -- -- VCE(sat) -- 1.5 Vdc VBE -- 2.0 Vdc fT 125 -- MHz Characteristic ON Unit CHARACTERISTICS(3) DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) hFE (IC = 100 mAdc, VCE = 5.0 Vdc) Collector-Emitter Saturation Voltage (IC = 100 mAdc, IB = 0.1 mAdc) Base-Emitter On Voltage (IC = 100 mAdc, VCE = 5.0 Vdc) -- SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product(4) (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 4. fT = |hfe| * ftest. RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model http://onsemi.com 664 MMBTA13LT1 MMBTA14LT1 NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25C) 2.0 BANDWIDTH = 1.0 Hz RS 0 200 i n, NOISE CURRENT (pA) en, NOISE VOLTAGE (nV) 500 100 10 A 50 100 A 20 IC = 1.0 mA 10 5.0 BANDWIDTH = 1.0 Hz 1.0 0.7 0.5 IC = 1.0 mA 0.3 0.2 100 A 0.1 0.07 0.05 10 A 0.03 10 20 50 100 200 500 1k 2k 5k 10k 20k f, FREQUENCY (Hz) 50k 100k 0.02 10 20 50 100 200 200 14 IC = 10 A 70 50 100 A 30 20 10 1.0 mA 1.0 2.0 BANDWIDTH = 10 Hz TO 15.7 kHz 12 BANDWIDTH = 10 Hz TO 15.7 kHz 100 50k 100k Figure 3. Noise Current NF, NOISE FIGURE (dB) VT, TOTAL WIDEBAND NOISE VOLTAGE (nV) Figure 2. Noise Voltage 500 1k 2k 5k 10k 20k f, FREQUENCY (Hz) 10 10 A 8.0 100 A 6.0 4.0 IC = 1.0 mA 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (k) 500 1000 0 1.0 Figure 4. Total Wideband Noise Voltage 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (k) Figure 5. Wideband Noise Figure http://onsemi.com 665 500 1000 MMBTA13LT1 MMBTA14LT1 SMALL-SIGNAL CHARACTERISTICS 4.0 |h fe |, SMALL-SIGNAL CURRENT GAIN C, CAPACITANCE (pF) 20 TJ = 25C 10 7.0 Cibo Cobo 5.0 3.0 2.0 0.04 0.1 0.2 0.4 1.0 2.0 4.0 VR, REVERSE VOLTAGE (VOLTS) 10 20 VCE = 5.0 V f = 100 MHz TJ = 25C 2.0 1.0 0.8 0.6 0.4 0.2 0.5 40 1.0 hFE, DC CURRENT GAIN 200k TJ = 125C 100k 70k 50k 25C 30k 20k 10k 7.0k 5.0k -55C 3.0k 2.0k 5.0 7.0 10 VCE = 5.0 V 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 TJ = 25C 2.5 IC = 10 mA RV, TEMPERATURE COEFFICIENTS (mV/C) TJ = 25C V, VOLTAGE (VOLTS) 1.4 VBE(sat) @ IC/IB = 1000 1.2 VBE(on) @ VCE = 5.0 V 1.0 VCE(sat) @ IC/IB = 1000 5.0 7.0 10 50 mA 250 mA 500 mA 2.0 1.5 1.0 0.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (A) 500 1000 Figure 9. Collector Saturation Region 1.6 0.6 500 3.0 Figure 8. DC Current Gain 0.8 0.5 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) Figure 7. High Frequency Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 6. Capacitance 2.0 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 -1.0 -2.0 *APPLIES FOR IC/IB hFE/3.0 25C TO 125C *RVC FOR VCE(sat) -55C TO 25C -3.0 25C TO 125C -4.0 VB FOR VBE -5.0 -55C TO 25C -6.0 5.0 7.0 10 Figure 10. "On" Voltages 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) Figure 11. Temperature Coefficients http://onsemi.com 666 500 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) MMBTA13LT1 MMBTA14LT1 1.0 0.7 0.5 0.3 D = 0.5 0.2 0.2 0.1 0.05 SINGLE PULSE 0.1 0.07 0.05 SINGLE PULSE 0.03 ZJC(t) = r(t) * RJCTJ(pk) - TC = P(pk) ZJC(t) ZJA(t) = r(t) * RJATJ(pk) - TA = P(pk) ZJA(t) 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 500 1.0k 2.0k 5.0k 10k Figure 12. Thermal Response IC, COLLECTOR CURRENT (mA) 1.0k 700 500 300 200 FIGURE A 1.0 ms TA = 25C tP TC = 25C 100 s PP 1.0 s 100 70 50 PP t1 30 20 10 0.4 0.6 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 1/f 1.0 2.0 4.0 6.0 10 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 13. Active Region Safe Operating Area t DUTYCYCLE t1f 1 tP PEAK PULSE POWER = PP 40 Design Note: Use of Transient Thermal Resistance Data http://onsemi.com 667 ON Semiconductor High Voltage Transistor MMBTA42LT1 NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Symbol MMBTA43 Unit Collector-Emitter Voltage Rating VCEO 200 Vdc Collector-Base Voltage VCBO 200 Vdc Emitter-Base Voltage VEBO 6.0 Vdc IC 500 mAdc Collector Current -- Continuous 3 1 2 DEVICE MARKING CASE 318-08, STYLE 6 SOT-23 (TO-236) MMBTA42LT1 = 1D; MMBTA43LT1 = M1E THERMAL CHARACTERISTICS Characteristic Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W PD 300 mW 2.4 mW/C RJA 417 C/W TJ, Tstg -55 to +150 C Total Device Dissipation FR-5 Board,(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature COLLECTOR 3 1 BASE 2 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max 300 -- 300 -- 6.0 -- -- 0.1 -- 0.1 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(3) (IC = 1.0 mAdc, IB = 0) V(BR)CEO Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0) V(BR)CBO Emitter-Base Breakdown Voltage (IE = 100 Adc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 200 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) IEBO Vdc Vdc Vdc Adc Adc 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 June, 2001 - Rev. 3 668 Publication Order Number: MMBTA42LT1/D MMBTA42LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Characteristic ON Min Max 25 40 -- -- 40 -- -- 0.5 Unit CHARACTERISTICS(3) DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) hFE (IC = 30 mAdc, VCE = 10 Vdc) -- Collector-Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc)2 VCE(sat) Vdc Base-Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) VBE(sat) -- 0.9 Vdc fT 50 -- MHz -- 3.0 SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Collector-Base Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) Ccb 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. Figure 14. http://onsemi.com 669 pF MMBTA42LT1 120 hFE , DC CURRENT GAIN VCE = 10 Vdc TJ = +125C 100 80 25C 60 40 -55C 20 0 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain f, T CURRENT-GAIN BANDWIDTH (MHz) 100 C, CAPACITANCE (pF) Ceb @ 1MHz 10 1.0 0.1 0.1 Ccb @ 1MHz 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) 1000 80 70 60 50 40 30 TJ = 25C VCE = 20 V f = 20 MHz 20 10 1.0 Figure 2. Capacitance 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 3. Current-Gain - Bandwidth 1.4 V, VOLTAGE (VOLTS) 1.2 VCE(sat) @ 25C, IC/IB = 10 VCE(sat) @ 125C, IC/IB = 10 VCE(sat) @ -55C, IC/IB = 10 VBE(sat) @ 25C, IC/IB = 10 1.0 0.8 VBE(sat) @ 125C, IC/IB = 10 0.6 VBE(sat) @ -55C, IC/IB = 10 VBE(on) @ 25C, VCE = 10 V VBE(on) @ 125C, VCE = 10 V VBE(on) @ -55C, VCE = 10 V 0.4 0.2 0.0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100 Figure 4. "ON" Voltages http://onsemi.com 670 ON Semiconductor Driver Transistors MMBTA55LT1 MMBTA56LT1 PNP Silicon MMBTA56LT1 is a Preferred Device MAXIMUM RATINGS Rating Symbol MMBTA55 MMBTA56 Unit Collector-Emitter Voltage VCEO -60 -80 Vdc Collector-Base Voltage VCBO -60 -80 Vdc Emitter-Base Voltage VEBO -4.0 Vdc IC -500 mAdc Collector Current - Continuous 3 1 2 DEVICE MARKING MMBTA55LT1 = 2H; MMBTA56LT1 = 2GM CASE 318-08, STYLE 6 SOT-23 (TO-236) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 TA = 25C Derate above 25C Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W PD 300 mW 2.4 mW/C RJA 417 C/W TJ, Tstg -55 to +150 C Board,(1) Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature COLLECTOR 3 1 BASE 2 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)CEO -60 -80 - - Vdc V(BR)EBO -4.0 - Vdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(3) (IC = -1.0 mAdc, IB = 0) MMBTA55 MMBTA56 Emitter-Base Breakdown Voltage (IE = -100 Adc, IC = 0) ICES - -0.1 Adc ICBO - - -0.1 -0.1 Adc hFE 100 100 - - - Collector-Emitter Saturation Voltage (IC = -100 mAdc, IB = -10 mAdc) VCE(sat) - -0.25 Vdc Base-Emitter On Voltage (IC = -100 mAdc, VCE = -1.0 Vdc) VBE(on) - -1.2 Vdc fT 50 - MHz Collector Cutoff Current (VCE = -60 Vdc, IB = 0) Collector Cutoff Current (VCB = -60 Vdc, IE = 0) Collector Cutoff Current (VCB = -80 Vdc, IE = 0) MMBTA55 MMBTA56 ON CHARACTERISTICS DC Current Gain (IC = -10 mAdc, VCE = -1.0 Vdc) DC Current Gain (IC = -100 mAdc, VCE = -1.0 Vdc) SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product(4) (IC = -100 mAdc, VCE = -1.0 Vdc, f = 100 MHz) 1. 2. 3. 4. FR-5 = 1.0 x 0.75 x 0.062 in. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. fT is defined as the frequency at which |hfe| extrapolates to unity. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 671 Publication Order Number: MMBTA55LT1/D ON Semiconductor Darlington Transistors MMBTA63LT1 MMBTA64LT1 PNP Silicon MMBTA64LT1 is a Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCES -30 Vdc Collector-Base Voltage VCBO -30 Vdc Emitter-Base Voltage VEBO -10 Vdc IC -500 mAdc Collector Current - Continuous 3 1 2 DEVICE MARKING MMBTA63LT1 = 2U; MMBTA64LT1 = 2V CASE 318-08, STYLE 6 SOT-23 (TO-236AF) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W PD 300 mW 2.4 mW/C RJA 417 C/W TJ, Tstg -55 to +150 C Total Device Dissipation FR-5 Board,(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature COLLECTOR 3 BASE 1 EMITTER 2 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)CEO -30 - Vdc Collector Cutoff Current (VCB = -30 Vdc) ICBO - -100 nAdc Emitter Cutoff Current (VEB = -10 Vdc) IEBO - -100 nAdc 5,000 10,000 10,000 20,000 - - - - OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = -100 Adc) ON CHARACTERISTICS DC Current Gain(3) (IC = -10 mAdc, VCE = -5.0 Vdc) (IC = -10 mAdc, VCE = -5.0 Vdc) (IC = -100 mAdc, VCE = -5.0 Vdc) (IC = -100 mAdc, VCE = -5.0 Vdc) hFE MMBTA63 MMBTA64 MMBTA63 MMBTA64 - Collector-Emitter Saturation Voltage (IC = -100 mAdc, IB = -0.1 mAdc) VCE(sat) - -1.5 Vdc Base-Emitter On Voltage (IC = -100 mAdc, VCE = -5.0 Vdc) VBE(on) - -2.0 Vdc fT 125 - MHz SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (IC = -10 mAdc, VCE = -5.0 Vdc, f = 100 MHz) 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 672 Publication Order Number: MMBTA63LT1/D MMBTA63LT1 MMBTA64LT1 hFE , DC CURRENT GAIN (X1.0 K) 200 TA = 125C 100 70 50 30 -10 V 25C VCE = -2.0 V -5.0 V 20 10 7.0 5.0 -55C 3.0 2.0 -0.3 -0.5 -0.7 -2.0 -1.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) -2.0 TA = 25C VBE(sat) @ IC/IB = 100 -1.2 VBE(on) @ VCE = -5.0 V -0.8 VCE(sat) @ IC/IB = 1000 IC/IB = 100 -0.4 0 -0.3 -0.5 -1.0 -2 -3 -5 -10 -20 -30 -50 IC, COLLECTOR CURRENT (mA) -100 -200 -300 TA = 25C -1.8 -1.6 -1.4 IC = -10 mA -50 mA -100 mA -175 mA -1.0 -0.8 -0.6 -0.1-0.2 -0.5 -1 -2 -5 -10 -20 -50 -100-200 -500 -1K-2K -5K-10K IB, BASE CURRENT (A) Figure 2. Collector Saturation Region 10 4.0 3.0 2.0 -300 mA -1.2 Figure 3. "On" Voltage |h FE |, HIGH FREQUENCY CURRENT GAIN V, VOLTAGE (VOLTS) -1.6 -2.0 VCE = -5.0 V f = 100 MHz TA = 25C 1.0 0.4 0.2 0.1 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 IC, COLLECTOR CURRENT (mA) Figure 4. High Frequency Current Gain http://onsemi.com 673 -1K ON Semiconductor High Voltage Transistor MMBTA92LT1 PNP Silicon Preferred Device MAXIMUM RATINGS Symbol MMBTA92 Unit Collector-Emitter Voltage Rating VCEO -300 Vdc Collector-Base Voltage VCBO -300 Vdc Emitter-Base Voltage VEBO -5.0 Vdc IC -500 mAdc Collector Current - Continuous 3 1 2 DEVICE MARKING CASE 318-08, STYLE 6 SOT-23 (TO-236AF) MMBTA92LT1 = 2D THERMAL CHARACTERISTICS Characteristic Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W PD 300 mW 2.4 mW/C RJA 417 C/W TJ, Tstg -55 to +150 C Total Device Dissipation FR-5 Board,(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature COLLECTOR 3 1 BASE 2 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max -300 - -300 - -5.0 - - -0.25 - -0.1 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(3) (IC = -1.0 mAdc, IB = 0) V(BR)CEO Collector-Base Breakdown Voltage (IC = -100 Adc, IE = 0) V(BR)CBO Emitter-Base Breakdown Voltage (IE = -100 Adc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = -200 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = -3.0 Vdc, IC = 0) IEBO Vdc Vdc Vdc Adc Adc 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 June, 2001 - Rev. 0 674 Publication Order Number: MMBTA92LT1/D MMBTA92LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Characteristic ON Min Max 25 40 25 - - - - -0.5 Unit CHARACTERISTICS(3) DC Current Gain (IC = -1.0 mAdc, VCE = -10 Vdc) (IC = -10 mAdc, VCE = -10 Vdc) (IC = -30 mAdc, VCE = -10 Vdc) hFE - Collector-Emitter Saturation Voltage (IC = -20 mAdc, IB = -2.0 mAdc) VCE(sat) Base-Emitter Saturation Voltage (IC = -20 mAdc, IB = -2.0 mAdc) VBE(sat) - -0.9 Vdc fT 50 - MHz - 6.0 Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (IC = -10 mAdc, VCE = -20 Vdc, f = 100 MHz) Collector-Base Capacitance (VCB = -20 Vdc, IE = 0, f = 1.0 MHz) Ccb 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. Figure 5. http://onsemi.com 675 pF MMBTA92LT1 300 hFE , DC CURRENT GAIN VCE = 10 Vdc TJ = +125C 250 200 25C 150 -55C 100 50 0 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) C, CAPACITANCE (pF) 100 f, T CURRENT-GAIN BANDWIDTH (MHz) Figure 1. DC Current Gain Cib @ 1MHz 10 Ccb @ 1MHz 1.0 0.1 0.1 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) 150 130 110 90 70 50 30 10 1000 TJ = 25C VCE = 20 Vdc F = 20 MHz 1 Figure 2. Capacitance 3 5 11 13 15 7 9 IC, COLLECTOR CURRENT (mA) 17 19 21 Figure 3. Current-Gain - Bandwidth 1.4 V, VOLTAGE (VOLTS) 1.2 VCE(sat) @ 25C, IC/IB = 10 VCE(sat) @ 125C, IC/IB = 10 VCE(sat) @ -55C, IC/IB = 10 VBE(sat) @ 25C, IC/IB = 10 1.0 0.8 VBE(sat) @ 125C, IC/IB = 10 VBE(sat) @ -55C, IC/IB = 10 VBE(on) @ 25C, VCE = 10 V VBE(on) @ 125C, VCE = 10 V VBE(on) @ -55C, VCE = 10 V 0.6 0.4 0.2 0.0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100 Figure 4. "ON" Voltages http://onsemi.com 676 MMBTH10LT1, MMBTH10-4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon * Device Marking: 3EM http://onsemi.com Device Marking: COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc Emitter-Base Voltage VEBO 3.0 Vdc Symbol Max Unit 225 1.8 mW mW/C 556 C/W 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board (1) TA = 25C Derate above 25C PD Thermal Resistance, Junction to Ambient (1) RJA Total Device Dissipation Alumina Substrate (2) TA = 25C Derate above 25C PD Thermal Resistance, Junction to Ambient (2) Junction and Storage Temperature Range 300 2.4 mW mW/C RJA 417 C/W TJ, Tstg -55 to +150 C 3 1 2 CASE 318 SOT-23 STYLE 6 ORDERING INFORMATION Device (1) FR-5 = 1.0 x 0.75 x 0.062 in. (2) Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina Package Shipping MMBTH10LT1 SOT-23 3000/Tape & Reel MMBTH10-4LT1 SOT-23 3000/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 June, 2000 - Rev. 1 677 Publication Order Number: MMBTH10LT1/D MMBTH10LT1, MMBTH10-4LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 25 -- -- Vdc Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0) V(BR)CBO 30 -- -- Vdc Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO 3.0 -- -- Vdc Collector Cutoff Current (VCB = 25 Vdc, IE = 0) ICBO -- -- 100 nAdc Emitter Cutoff Current (VEB = 2.0 Vdc, IC = 0) IEBO -- -- 100 nAdc 60 120 -- -- -- 240 VCE(sat) -- -- 0.5 Vdc VBE -- -- 0.95 Vdc 650 800 -- -- -- -- OFF CHARACTERISTICS ON CHARACTERISTICS DC Current Gain (IC = 4.0 mAdc, VCE = 10 Vdc) hFE MMBTH10LT1 MMBTH10-4LT1 Collector-Emitter Saturation Voltage (IC = 4.0 mAdc, IB = 0.4 mAdc) Base-Emitter On Voltage (IC = 4.0 mAdc, VCE = 10 Vdc) -- SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 4.0 mAdc, VCE = 10 Vdc, f = 100 MHz) fT MMBTH10LT1 MMBTH10-4LT1 MHz Collector-Base Capacitance (VCB= 10 Vdc, IE = 0, f = 1.0 MHz) Ccb -- -- 0.7 pF Common-Base Feedback Capacitance (VCB= 10 Vdc, IE = 0, f = 1.0 MHz) Crb -- -- 0.65 pF rbCc -- -- 9.0 ps Collector Base Time Constant (IC= 4.0 mAdc, VCB = 10 Vdc, f = 31.8 MHz) http://onsemi.com 678 MMBTH10LT1, MMBTH10-4LT1 TYPICAL CHARACTERISTICS COMMON-BASE y PARAMETERS versus FREQUENCY (VCB = 10 Vdc, IC = 4.0 mAdc, TA = 25C) yib, INPUT ADMITTANCE 0 70 gib -10 60 50 jb ib (mmhos) y ib , INPUT ADMITTANCE (mmhos) 80 -bib 40 30 -20 1000 MHz -30 700 -40 20 10 0 400 -50 100 200 300 400 500 f, FREQUENCY (MHz) 700 -60 1000 0 20 10 30 Figure 1. Rectangular Form 200 40 50 gib (mmhos) 60 100 80 70 Figure 2. Polar Form 70 60 bfb 60 50 50 40 -gfb 30 400 200 jb fb (mmhos) y ib , FORWARD TRANSFER ADMITTANCE (mmhos) yfb, FORWARD TRANSFER ADMITTANCE 20 10 600 100 700 40 30 1000 MHz 0 -10 20 -20 -30 100 200 300 400 500 f, FREQUENCY (MHz) 700 1000 10 70 Figure 3. Rectangular Form 60 50 40 10 30 20 gfb (mmhos) 0 Figure 4. Polar Form http://onsemi.com 679 -10 -20 -30 MMBTH10LT1, MMBTH10-4LT1 TYPICAL CHARACTERISTICS COMMON-BASE y PARAMETERS versus FREQUENCY (VCB = 10 Vdc, IC = 4.0 mAdc, TA = 25C) 0 5.0 100 4.0 3.0 400 -2.0 -brb -brb 2.0 -3.0 700 MPS H10 1.0 -4.0 -grb 0 200 -1.0 MPS H11 jb rb (mmhos) y rb , REVERSE TRANSFER ADMITTANCE (mmhos) yrb, REVERSE TRANSFER ADMITTANCE 100 200 300 400 500 f, FREQUENCY (MHz) 700 -5.0 -2.0 -1.8 -1.2 -0.8 1000 Figure 5. Rectangular Form 1000 MHz 0 -0.4 0.4 grb (mmhos) 0.8 1.2 1.6 2.0 Figure 6. Polar Form yob, OUTPUT ADMITTANCE 10 1000 MHz 8.0 8.0 7.0 700 6.0 5.0 jb ob(mmhos) yob, OUTPUT ADMITTANCE (mmhos) 10 9.0 bob 4.0 6.0 4.0 400 3.0 2.0 gob 1.0 0 100 200 300 400 500 f, FREQUENCY (MHz) 200 2.0 100 700 1000 0 0 Figure 7. Rectangular Form 2.0 4.0 6.0 gob (mmhos) Figure 8. Polar Form http://onsemi.com 680 8.0 10 ON Semiconductor Silicon Tuning Diode MMBV105GLT1 This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid-state reliability in replacement of mechanical tuning methods. * Controlled and Uniform Tuning Ratio ON Semiconductor Preferred Device 3 1 2 CASE 318-08, STYLE 8 SOT-23 (TO-236AB) MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 30 Vdc Forward Current IF 200 mAdc Device Dissipation @ TA = 25C Derate above 25C PD 225 1.8 mW mW/C Junction Temperature TJ +125 C Storage Temperature Range Tstg -55 to +150 C 3 Cathode 1 Anode DEVICE MARKING MMBV105GLT1 = M4E ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 Adc) Symbol Min Max Unit V(BR)R 30 -- Vdc IR -- 50 nAdc Reverse Voltage Leakage Current (VR = 28 Vdc) Device Type MMBV105GLT1 CT VR = 25 Vdc, f = 1.0 MHz pF Q VR = 3.0 Vdc f = 50 MHz CR C3/C25 f = 1.0 MHz Min Max Typ Min Max 1.5 2.8 250 4.0 6.5 Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 2 681 Publication Order Number: MMBV105GLT1/D MMBV105GLT1 TYPICAL CHARACTERISTICS 20 1000 Q, FIGURE OF MERIT 16 14 12 10 8.0 6.0 f = 1.0 MHz TA = 25C 4.0 VR = 3 Vdc TA = 25C 100 2.0 0 0.3 0.5 1.0 2.0 3.0 5.0 10 10 20 30 10 100 VR, REVERSE VOLTAGE (VOLTS) f, FREQUENCY (MHz) Figure 1. Diode Capacitance Figure 2. Figure of Merit CT , DIODE CAPACITANCE (NORMALIZED) CT , DIODE CAPACITANCE (pF) 18 1.04 1.03 VR = 3.0 Vdc f = 1.0 MHz 1.02 1.01 1.00 0.99 0.98 0.97 0.96 -75 -50 -25 0 +25 +50 +75 TA, AMBIENT TEMPERATURE (C) Figure 3. Diode Capacitance http://onsemi.com 682 +100 +125 1000 ON Semiconductor MMBV109LT1, MV209 Silicon Epicap Diodes Designed for general frequency control and tuning applications; providing solid-state reliability in replacement of mechanical tuning methods. * High Q with Guaranteed Minimum Values at VHF Frequencies * Controlled and Uniform Tuning Ratio * Available in Surface Mount Package MMBV109LT1 and MV209 are Preferred Devices 26-32 pF VOLTAGE VARIABLE CAPACITANCE DIODES MAXIMUM RATINGS Rating Symbol MMBV109LT1 MV209 Reverse Voltage VR 30 Vdc Forward Current IF 200 mAdc Forward Power Dissipation @ TA = 25C Derate above 25C PD Junction Temperature TJ +125 C Storage Temperature Range Tstg -55 to +150 C 200 2.0 3 Unit 200 1.6 1 2 CASE 318-08, STYLE 6 SOT-23 (TO-236AB) mW mW/C 1 2 DEVICE MARKING CASE 182-06, STYLE 1 TO-92 (TO-226AC) MMBV109LT1 = M4A, MV209 = MV209 3 Cathode ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage (IR = 10 Adc) V(BR)R 30 -- -- Vdc Reverse Voltage Leakage Current (VR = 25 Vdc) IR -- -- 0.1 Adc Diode Capacitance Temperature Coefficient (VR = 3.0 Vdc, f = 1.0 MHz) TCC -- 300 -- ppm/ C 2 Cathode Ct, Diode Capacitance VR = 3.0 Vdc, f = 1.0 MHz pF Device MMBV109LT1, MV209 Q, Figure of Merit VR = 3.0 Vdc f = 50 MHz SOT-23 TO-92 1 Anode 1 Anode CR, Capacitance Ratio C3/C25 f = 1.0 MHz (Note 1) Min Nom Max Min Min Max 26 29 32 200 5.0 6.5 1. CR is the ratio of Ct measured at 3 Vdc divided by Ct measured at 25 Vdc. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 October, 2001 - Rev. 3 683 Publication Order Number: MMBV109LT1/D MMBV109LT1, MV209 40 1000 36 Q, FIGURE OF MERIT CT , CAPACITANCE - pF 32 28 24 20 16 12 f = 1.0 MHz TA = 25C 8 VR = 3 Vdc TA = 25C 100 4 0 1 3 10 30 10 100 Figure 2. FIGURE OF MERIT C t , DIODE CAPACITANCE (NORMALIZED) I R , REVERSE CURRENT (nA) 1000 Figure 1. DIODE CAPACITANCE 20 10 6.0 VR = 20 Vdc 2.0 1.0 0.6 0.2 0.1 0.06 0.02 0.01 0.006 -40 100 f, FREQUENCY (MHz) 100 60 0.002 0.001 -60 10 VR, REVERSE VOLTAGE (VOLTS) -20 0 +20 +40 +60 +80 +100 +120 +140 1.04 1.03 1.02 VR = 3.0 Vdc f = 1.0 MHz Ct Cc + Cj 1.01 1.00 0.99 0.98 0.97 0.96 -75 -50 -25 0 +25 +50 +75 TA, AMBIENT TEMPERATURE TA, AMBIENT TEMPERATURE Figure 3. LEAKAGE CURRENT Figure 4. DIODE CAPACITANCE NOTES ON TESTING AND SPECIFICATIONS 1. CR is the ratio of Ct measured at 3.0 Vdc divided by Ct measured at 25 Vdc. http://onsemi.com 684 +100 +125 MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2205, LV2209 Silicon Tuning Diodes 6.8-100 pF, 30 Volts Voltage Variable Capacitance Diodes http://onsemi.com These devices are designed in popular plastic packages for the high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications. They provide solid-state reliability in replacement of mechanical tuning methods. Also available in a Surface Mount Package up to 33 pF. * * * * 3 Cathode SOT-23 2 Cathode High Q Controlled and Uniform Tuning Ratio Standard Capacitance Tolerance - 10% Complete Typical Design Curves TO-92 1 Anode 1 Anode MARKING DIAGRAM 3 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 30 Vdc Forward Current IF 200 mAdc Forward Power Dissipation @ TA = 25C MMBV21xx Derate above 25C PD @ TA = 25C Derate above 25C TO-236AB, SOT-23 CASE 318-08 STYLE 8 XXX M XXX = Device Code* M = Date Code * See Table 280 2.8 Junction Temperature TJ +150 C Storage Temperature Range Tstg -55 to +150 C DEVICE MARKING MMBV2101LT1 = M4G MMBV2103LT1 = 4H MMBV2105LT1 = 4U MMBV2107LT1 = 4W 2 mW mW/C 225 1.8 MV21xx LV22xx 1 XX XXXX YWW 1 MMBV2108LT1 = 4X MMBV2109LT1 = 4J MV2101 = MV2101 MV2105 = MV2105 MV2109 = MV2109 LV2205 = LV2205 LV2209 = LV2209 2 TO-226AC, TO-92 CASE 182 STYLE 1 XX = Device Code Line 1* XXXX = Device Code Line 2* M = Date Code * See Table ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Reverse Breakdown Voltage (IR = 10 Adc) MMBV21xx, MV21xx LV22xx V(BR)R Reverse Voltage Leakage Current (VR = 25 Vdc, TA = 25C) Diode Capacitance Temperature Coefficient (VR = 4.0 Vdc, f = 1.0 MHz) Typ Max Unit Preferred devices are recommended choices for future use and best overall value. Vdc 30 25 - - - - IR - - 0.1 Adc TCC - 280 - ppm/C Semiconductor Components Industries, LLC, 2001 October, 2001 - Rev. 3 Min 685 Publication Order Number: MMBV2101LT1/D MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2205, LV2209 CT, Diode Capacitance VR = 4.0 Vdc, f = 1.0 MHz pF Q, Figure of Merit VR = 4.0 Vdc, f = 50 MHz TR, Tuning Ratio C2/C30 f = 1.0 MHz Device Min Nom Max Typ Min Typ Max MMBV2101LT1/MV2101 MMBV2103LT1 LV2205/MMBV2105LT1/MV2105 MMBV2107LT1 MMBV2108LT1 LV2209MMBV2109LT1/MV2109 6.1 9.0 13.5 19.8 24.3 29.7 6.8 10 15 22 27 33 7.5 11 16.5 24.2 29.7 36.3 450 400 400 350 300 200 2.5 2.5 2.5 2.5 2.5 2.5 2.7 2.9 2.9 2.9 3.0 3.0 3.2 3.2 3.2 3.2 3.2 3.2 MMBV2101LT1, MMBV2103LT1, MMBV2105LT1, MMBV2107LT1 thru MMBV2109LT1, are also available in bulk. Use the device title and drop the "T1" suffix when ordering any of these devices in bulk. PARAMETER TEST METHODS 1. CT, DIODE CAPACITANCE 4. TCC, DIODE CAPACITANCE TEMPERATURE COEFFICIENT (CT = CC + CJ). CT is measured at 1.0 MHz using a capacitance bridge (Boonton Electronics Model 75A or equivalent). TCC is guaranteed by comparing CT at VR = 4.0 Vdc, f = 1.0 MHz, TA = -65C with CT at VR = 4.0 Vdc, f = 1.0 MHz, TA = +85C in the following equation, which defines TCC: 2. TR, TUNING RATIO - CT(-65C) 6 CT( 85C) * C 10(25C) 85 65 TR is the ratio of CT measured at 2.0 Vdc divided by CT measured at 30 Vdc. TCC 3. Q, FIGURE OF MERIT Accuracy limited by measurement of CT to 0.1 pF. Q is calculated by taking the G and C readings of an admittance bridge at the specified frequency and substituting in the following equations: Q 2fC G (Boonton Electronics Model 33AS8 or equivalent). Use Lead Length 1/16". http://onsemi.com 686 T MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2205, LV2209 TYPICAL DEVICE CHARACTERISTICS 1000 TA = 25C f = 1.0 MHz C T , DIODE CAPACITANCE (pF) 500 200 100 MMBV2109LT1/MV2109 50 MMBV2105LT1/MV2105 20 MMBV2101LT1/MV2101 10 5.0 2.0 1.0 0.1 0.2 0.3 0.5 1.0 5.0 3.0 2.0 20 10 30 VR, REVERSE VOLTAGE (VOLTS) Figure 1. Diode Capacitance versus Reverse Voltage 100 50 VR = 2.0 Vdc 1.030 I R , REVERSE CURRENT (nA) NORMALIZED DIODE CAPACITANCE 1.040 1.020 VR = 4.0 Vdc 1.010 1.000 VR = 30 Vdc 0.990 NORMALIZED TO CT at TA = 25C VR = (CURVE) 0.980 0.970 0.960 -75 -50 -25 0 +25 +50 +75 TJ, JUNCTION TEMPERATURE (C) TA = 125C 20 10 5.0 2.0 1.0 0.50 TA = 75C 0.20 0.10 TA = 25C 0.05 +100 0.02 0.01 +125 Q, FIGURE OF MERIT Q, FIGURE OF MERIT 500 300 200 100 10 1.0 TA = 25C f = 50 MHz 2.0 10 3.0 5.0 7.0 VR, REVERSE VOLTAGE (VOLTS) 20 25 30 5000 3000 2000 MMBV2109LT1 50 30 20 15 Figure 3. Reverse Current versus Reverse Bias Voltage MMBV2101LT1/MV2101 1000 10 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Normalized Diode Capacitance versus Junction Temperature 5000 3000 2000 5.0 0 20 30 1000 MMBV2101LT1/MV2101 500 300 200 100 50 30 20 10 10 Figure 4. Figure of Merit versus Reverse Voltage TA = 25C VR = 4.0 Vdc 20 MMBV2109LT1/MV2109 100 30 50 70 f, FREQUENCY (MHz) 200 Figure 5. Figure of Merit versus Frequency http://onsemi.com 687 250 ON Semiconductor MMBV3102LT1 Silicon Tuning Diode ON Semiconductor Preferred Device This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid-state reliability in replacement of mechanical tuning methods. * High Q with Guaranteed Minimum Values at VHF Frequencies * Controlled and Uniform Tuning Ratio 3 1 2 CASE 318-08, STYLE 8 SOT-23 (TO-236AB) MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 30 Vdc Forward Current IF 200 mAdc Device Dissipation @ TA = 25C Derate above 25C PD 225 1.8 mW mW/C Junction Temperature TJ +125 C Storage Temperature Range Tstg -55 to +150 C 3 Cathode 1 Anode DEVICE MARKING MMBV3102LT1 = M4C ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 Adc) Symbol Min Typ Max Unit V(BR)R 30 -- -- Vdc IR -- -- 0.1 Adc TCC -- 300 -- ppm/C Reverse Voltage Leakage Current (VR = 25 Vdc, TA = 25C) Diode Capacitance Temperature Coefficient (VR = 4.0 Vdc, f = 1.0 MHz) Ct, Diode Capacitance VR = 3.0 Vdc, f = 1.0 MHz pF Device MMBV3102LT1 Q, Figure of Merit VR = 3.0 Vdc f = 50 MHz CR, Capacitance Ratio C3/C25 f = 1.0 MHz Min Nom Max Min Min Typ 20 22 25 200 4.5 4.8 Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 688 Publication Order Number: MMBV3102LT1/D MMBV3102LT1 TYPICAL CHARACTERISTICS 20 40 Q, FIGURE OF MERIT (x 1000) CT , DIODE CAPACITANCE (pF) 36 32 28 24 20 16 12 f = 1.0 MHz TA = 25C 8.0 4.0 0 0.3 0.5 1.0 2.0 3.0 5.0 10 1.0 0.5 0 3.0 6.0 9.0 12 15 18 21 24 VR, REVERSE VOLTAGE (VOLTS) Figure 1. Diode Capacitance Figure 2. Figure of Merit C T , DIODE CAPACITANCE (NORMALIZED) I R , REVERSE CURRENT (nA) 3.0 2.0 VR, REVERSE VOLTAGE (VOLTS) 100 10 VR = 20 Vdc 1.0 0.1 0.01 0.001 -60 5.0 0.3 0.2 20 30 TA = 25C f = 50 MHz 10 -20 0 +20 +60 +100 +140 30 1.04 1.03 VR = 3.0 Vdc f = 1.0 MHz 1.02 1.01 1.00 0.99 0.98 0.97 0.96 -75 -50 -25 0 +25 +50 +75 TA, AMBIENT TEMPERATURE (C) TA, AMBIENT TEMPERATURE (C) Figure 3. Leakage Current Figure 4. Diode Capacitance NOTES ON TESTING AND SPECIFICATIONS 1. CR is the ratio of CT measured at 3.0 Vdc divided by CT measured at 25 Vdc. http://onsemi.com 689 27 +100 +125 ON Semiconductor MMBV3401LT1 Silicon Pin Diode ON Semiconductor Preferred Device This device is designed primarily for VHF band switching applications but is also suitable for use in general-purpose switching circuits. Supplied in a Surface Mount package. * Rugged PIN Structure Coupled with Wirebond Construction for Optimum Reliability * Low Capacitance 0.7 pF (Typ) at VR = 20 Vdc * Very Low Series Resistance at 100 MHz 0.34 Ohms (Typ) @ IF = 10 mAdc 3 1 2 CASE 318-08, STYLE 8 SOT-23 (TO-236AB) 3 Cathode MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 35 Vdc Forward Power Dissipation @ TA = 25C Derate above 25C PD 200 2.0 mW mW/C Junction Temperature TJ +125 C Storage Temperature Range Tstg -55 to +150 C 1 Anode DEVICE MARKING MMBV3401LT1 = 4D ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)R 35 -- -- Vdc Diode Capacitance (VR = 20 Vdc) CT -- -- 1.0 pF Series Resistance (Figure 5) (IF = 10 mAdc, f = 100 MHz) RS -- -- 0.7 Reverse Leakage Current (VR = 25 Vdc) IR -- -- 0.1 Adc Reverse Breakdown Voltage (IR = 10 Adc) Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 September, 2001 - Rev. 3 690 Publication Order Number: MMBV3401LT1/D MMBV3401LT1 TYPICAL CHARACTERISTICS 50 1.4 1.2 I F , FORWARD CURRENT (mA) R S , SERIES RESISTANCE (OHMS) 1.6 TA = 25C 1.0 0.8 0.6 0.4 40 30 TA = 25C 20 10 0.2 0 0 2.0 4.0 6.0 8.0 10 12 14 0 0.5 16 0.7 0.8 0.9 1.0 +100 +140 IF, FORWARD CURRENT (mA) VF, FORWARD VOLTAGE (VOLTS) Figure 1. Series Resistance Figure 2. Forward Voltage 100 20 40 10 7.0 5.0 I R , REVERSE CURRENT ( A) C T , DIODE CAPACITANCE (pF) 0.6 TA = 25C 2.0 1.0 0.7 0.5 10 4.0 VR = 25 Vdc 1.0 0.4 0.1 0.04 0.01 0.004 0.2 +3.0 0 -3.0 -6.0 -9.0 -12 -15 -18 -21 -24 -27 0.001 -60 VR, REVERSE VOLTAGE (VOLTS) -20 0 +20 +60 TA, AMBIENT TEMPERATURE (C) Figure 3. Diode Capacitance Figure 4. Leakage Current http://onsemi.com 691 ON Semiconductor MMBV3700LT1 MPN3700 High Voltage Silicon Pin Diodes These devices are designed primarily for VHF band switching applications but are also suitable for use in general-purpose switching circuits. They are supplied in a cost-effective plastic package for economical, high-volume consumer and industrial requirements. They are also available in surface mount. * Long Reverse Recovery Time trr = 300 ns (Typ) * Rugged PIN Structure Coupled with Wirebond Construction for Optimum Reliability * Low Series Resistance @ 100 MHz - RS = 0.7 Ohms (Typ) @ IF = 10 mAdc * Reverse Breakdown Voltage = 200 V (Min) 3 1 2 CASE 318-08, STYLE 8 SOT-23 (TO-236AB) 3 Cathode 1 Anode SOT-23 MAXIMUM RATINGS Rating Symbol Reverse Voltage VR Total Power Dissipation @ TA = 25C Derate above 25C PD MPN3700 MMBV3700LT1 200 Unit Vdc 1 2 280 2.8 200 2.0 mW mW/C Junction Temperature TJ +125 C Storage Temperature Range Tstg -55 to +150 C CASE 182-06, STYLE 1 TO-92 (TO-226AC) 2 Cathode 1 Anode TO-92 DEVICE MARKING MMBV3700LT1 = 4R ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage (IR = 10 Adc) V(BR)R 200 - - Vdc Diode Capacitance (VR = 20 Vdc, f = 1.0 MHz) CT - - 1.0 pF Series Resistance (Figure 5) (IF = 10 mAdc) RS - 0.7 1.0 Reverse Leakage Current (VR = 150 Vdc) IR - - 0.1 Adc Reverse Recovery Time (IF = IR = 10 mAdc) trr - 300 - ns Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 692 Publication Order Number: MMBV3700LT1D MMBV3700LT1 MPN3700 TYPICAL CHARACTERISTICS 800 2.8 I F , FORWARD CURRENT (mA) R S , SERIES RESISTANCE (OHMS) 3.2 TA = 25C 2.4 2.0 1.6 1.2 0.8 0 2.0 6.0 4.0 8.0 10 12 14 500 400 TA = 25C 300 200 0 16 0.8 0.9 1.0 VF, FORWARD VOLTAGE (VOLTS) Figure 1. Series Resistance Figure 2. Forward Voltage 10 8.0 6.0 100 40 4.0 TA = 25C 2.0 1.0 0.8 0.6 0.4 0.2 0.1 0.7 IF, FORWARD CURRENT (mA) I R , REVERSE CURRENT ( A) C T , DIODE CAPACITANCE (pF) 600 100 0.4 0 700 10 4.0 VR = 15 Vdc 1.0 0.4 0.1 0.04 0.01 0.004 0 -10 -20 -30 -40 0.001 -60 -50 VR, REVERSE VOLTAGE (VOLTS) -20 0 +20 +60 +100 TA, AMBIENT TEMPERATURE (C) Figure 3. Diode Capacitance Figure 4. Leakage Current http://onsemi.com 693 +140 ON Semiconductor MMBV409LT1 Silicon Tuning Diode ON Semiconductor Preferred Device These devices are designed for general frequency control and tuning applications. They provide solid-state reliability in replacement of mechanical tuning methods. * High Q with Guaranteed Minimum Values at VHF Frequencies * Controlled and Uniform Tuning Ratio * Available in Surface Mount Package 3 1 2 CASE 318-08, STYLE 8 SOT-23 (TO-236AB) Rating 1 Anode 3 Cathode MAXIMUM RATINGS Symbol Values Unit Reverse Voltage VR 20 Vdc Forward Current IF 200 mAdc Forward Power Dissipation @ TA = 25C Derate above 25C PD 225 1.8 mW mW/C Junction Temperature TJ +125 C Storage Temperature Range Tstg -55 to +150 C DEVICE MARKING MMBV409LT1 = X5 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 Adc) Symbol Min Typ Max Unit V(BR)R 20 -- -- Vdc IR -- -- 0.1 Adc TCC -- 300 -- ppm/C Reverse Voltage Leakage Current (VR = 15 Vdc) Diode Capacitance Temperature Coefficient (VR = 3.0 Vdc, f = 1.0 MHz) Ct, Diode Capacitance VR = 3.0 Vdc, f = 1.0 MHz pF Device MMBV409LT1, MV409 Q, Figure of Merit VR = 3.0 Vdc f = 50 MHz CR, Capacitance Ratio C3/C8 f = 1.0 MHz(1) Min Nom Max Min Min Max 26 29 32 200 1.5 1.9 1. CR is the ratio of Ct measured at 3 Vdc divided by Ct measured at 8 Vdc. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 June, 2001 - Rev. 2 694 Publication Order Number: MMBV409LT1/D MMBV409LT1 TYPICAL CHARACTERISTICS 1000 32 Q, FIGURE OF MERIT C T, DIODE CAPACITANCE (pF) 40 f = 1.0 MHz TA = 25C 24 16 100 8 0 1 2 3 10 20 30 10 100 1000 Figure 1. Diode Capacitance Figure 2. Figure of Merit C t , DIODE CAPACITANCE (NORMALIZED) VR = 15 Vdc 2.0 1.0 0.6 0.2 0.1 0.06 0.02 0.01 0.006 -40 100 f, FREQUENCY (MHz) 20 10 6.0 0.002 0.001 -60 10 VR, REVERSE VOLTAGE (VOLTS) 100 60 I R , REVERSE CURRENT (nA) VR = 3 Vdc TA = 25C -20 0 +20 +40 +60 +80 +100 +120 +140 1.04 1.03 VR = 3.0 Vdc f = 1.0 MHz 1.02 1.01 1.00 0.99 0.98 0.97 0.96 -75 TA, AMBIENT TEMPERATURE (C) -50 -25 0 +25 +50 +75 TA, AMBIENT TEMPERATURE (C) Figure 3. Leakage Current Figure 4. Diode Capacitance http://onsemi.com 695 +100 +125 ON Semiconductor Silicon Tuning Diode MMBV432LT1 This device is designed for FM tuning, general frequency control and tuning, or any top-of-the-line application requiring back-to-back diode configuration for minimum signal distortion and detuning. This device is supplied in the SOT-23 plastic package for high volume, pick and place assembly requirements. * High Figure of Merit Q = 150 (Typ) @ VR = 2.0 Vdc, f = 100 MHz * Guaranteed Capacitance Range * Dual Diodes - Save Space and Reduce Cost * Surface Mount Package * Available in 8 mm Tape and Reel * Monolithic Chip Provides Improved Matching - Guaranteed 1.0% (Max) Over Specified Tuning Range ON Semiconductor Preferred Device DUAL VOLTAGE VARIABLE CAPACITANCE DIODE 3 1 2 CASE 318-08, STYLE 9 SOT-23 (TO-236AB) MAXIMUM RATINGS (Each Diode) Rating Symbol Value Unit Reverse Voltage VR 14 Vdc Forward Current IF 200 mAdc Total Power Dissipation @ TA = 25C Derate above 25C PD 225 1.8 mW mW/C Junction Temperature TJ +125 C Storage Temperature Range Tstg -55 to +125 C 1 2 3 DEVICE MARKING MMBV432LT1 = M4B ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (EACH DIODE) Symbol Min Typ Max Unit V(BR)R 14 -- -- Vdc Reverse Voltage Leakage Current (VR = 9.0 Vdc) IR -- -- 100 nAdc Diode Capacitance (VR = 2.0 Vdc, f = 1.0 MHz) CT 43 -- 48.1 pF Capacitance Ratio C2/C8 (f = 1.0 MHz) CR 1.5 -- 2.0 -- Figure of Merit (VR = 2.0 Vdc, f = 100 MHz) Q 100 150 -- -- Characteristic Reverse Breakdown Voltage (IR = 10 Adc) Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 2 696 Publication Order Number: MMBV432LT1/D MMBV432LT1 TYPICAL CHARACTERISTICS (Each Diode) 550 70 Q, FIGURE OF MERIT CT , DIODE CAPACITANCE (pF) 100 50 30 f = 1.0 MHz TA = 25C 20 350 250 TA = 25C f = 100 MHz 150 10 2 1 3 5 7 2 4 6 10 8 VR, REVERSE VOLTAGE (VOLTS) Figure 1. Diode Capacitance Figure 2. Figure of Merit versus Voltage CT , DIODE CAPACITANCE (NORMALIZED) VR = 2.0 Vdc TA = 25C 500 200 100 50 20 0 VR, REVERSE VOLTAGE (VOLTS) 1000 30 50 70 100 1.06 1.04 VR = 2.0 Vdc 1.02 VR = 4.0 Vdc 1.00 0.98 f = 1.0 MHz 0.96 -75 200 300 -50 -25 +25 0 +50 +75 +100 +125 f, FREQUENCY (MHz) TJ, JUNCTION TEMPERATURE (C) Figure 3. Figure of Merit versus Frequency Figure 4. Diode Capacitance versus Temperature 10 TA = 125C 5 I R , REVERSE CURRENT (nA) 20 10 50 10 2000 Q, FIGURE OF MERIT 450 2 1 0.5 TA = 75C 0.2 0.1 0.05 TA = 25C 0.02 0.01 0 2 4 6 8 10 12 14 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Reverse Current versus Reverse Voltage http://onsemi.com 697 ON Semiconductor Silicon Tuning Diode MMBV609LT1 This device is designed for FM tuning, general frequency control and tuning, or any top-of-the-line application requiring back-to-back diode configuration for minimum signal distortion and detuning. This device is supplied in the SOT-23 plastic package for high volume, pick and place assembly requirements. * High Figure of Merit Q = 450 (Typ) @ VR = 3.0 Vdc, f = 50 MHz * Guaranteed Capacitance Range * Dual Diodes - Save Space and Reduce Cost * Surface Mount Package * Available in 8 mm Tape and Reel * Monolithic Chip Provides Improved Matching * Hyper Abrupt Junction Process Provides High Tuning Ratio ON Semiconductor Preferred Device DUAL VOLTAGE VARIABLE CAPACITANCE DIODE 3 1 2 CASE 318-08, STYLE 9 SOT-23 (TO-236AB) MAXIMUM RATINGS (Each Diode) Symbol Value Unit Reverse Voltage Rating VR 20 Vdc Forward Current IF 100 mAdc Total Power Dissipation @ TA = 25C Derate above 25C PD 225 1.8 mW mW/C Junction Temperature TJ +125 C Storage Temperature Range Tstg -55 to +125 C 1 2 3 DEVICE MARKING MMBV609LT1 = 5L ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Typ Max Unit V(BR)R 20 -- -- Vdc Reverse Voltage Leakage Current (VR = 15 Vdc) IR -- -- 10 nAdc Diode Capacitance (VR = 3.0 Vdc, f = 1.0 MHz) CT 26 -- 32 pF Capacitance Ratio C3/C8 (f = 1.0 MHz) CR 1.8 -- 2.4 -- Figure of Merit (VR = 3.0 Vdc, f = 50 MHz) Q 250 450 -- -- Reverse Breakdown Voltage (IR = 10 Adc) Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 698 Publication Order Number: MMBV609LT1/D MMBV609LT1 TYPICAL CHARACTERISTICS 1000 40 Q, FIGURE OF MERIT f = 1.0 MHz TA = 25C 30 20 VR = 3 Vdc TA = 25C 100 10 0 1 2 3 5 7 10 20 30 10 40 10 100 VR, REVERSE VOLTAGE (VOLTS) f, FREQUENCY (MHz) Figure 1. Diode Capacitance Figure 2. Figure of Merit CT , DIODE CAPACITANCE (NORMALIZED) CT , DIODE CAPACITANCE (pF) 50 1.04 1.03 VR = 3.0 Vdc f = 1.0 MHz 1.02 1.01 1.00 0.99 0.98 0.97 0.96 -75 -50 -25 0 +25 +50 +75 TA, AMBIENT TEMPERATURE (C) Figure 3. Diode Capacitance http://onsemi.com 699 +100 +125 1000 ON Semiconductor Silicon Tuning Diode MMBV809LT1 This device is designed for 900 MHz frequency control and tuning applications. It provides solid-state reliability in replacement of mechanical tuning methods. ON Semiconductor Preferred Device * Controlled and Uniform Tuning Ratio * Available in Surface Mount Package * Available in 8 mm Tape and Reel 4.5-6.1 pF VOLTAGE VARIABLE CAPACITANCE DIODE 3 MAXIMUM RATINGS 1 Rating Symbol Value Reverse Voltage VR 20 Vdc Forward Current IF 20 mAdc PD 225 1.8 mW mW/C Junction Temperature TJ +125 C Storage Temperature Range Tstg -55 to +125 C Dissipation(1) Total Power Derate above 25C @ TA = 25C 2 Unit CASE 318-08, STYLE 8 SOT-23 (TO-236AB) 1. FR5 Board 1.0 x 0.75 x 0.62 in. 1 ANODE 3 CATHODE DEVICE MARKING MMBV809LT1 = 5K ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic - All Types Reverse Breakdown Voltage (IR = 10 Adc) Reverse Voltage Leakage Current (VR = 15 Vdc) Ct, Diode Capacitance VR = 2.0 Vdc, f = 1.0 MHz pF Device MMBV809LT1 Symbol Min Typ Max Unit V(BR)R 20 -- -- Vdc IR -- -- 50 nAdc Q, Figure of Merit VR = 3.0 Vdc f = 500 MHz CR, Capacitance Ratio C2/C8 f = 1.0 MHz(2) Min Typ Max Typ Min Max 4.5 5.3 6.1 75 1.8 2.6 2. CR is the ratio of Ct measured at 2.0 Vdc divided by Ct measured at 8.0 Vdc. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 2 700 Publication Order Number: MMBV809LT1/D MMBV809LT1 TYPICAL CHARACTERISTICS 10 1000 Q, FIGURE OF MERIT CT , DIODE CAPACITANCE (pF) 9 8 7 6 5 4 3 VR = 3 Vdc TA = 25C 100 2 1 0 0.5 1 2 3 4 5 8 10 10 0.1 15 Figure 1. Diode Capacitance Figure 2. Figure of Merit CT , DIODE CAPACITANCE (NORMALIZED) R S , SERIES RESISTANCE (MHz) VR = 3.0 Vdc f = 1.0 MHz 800 600 0 10 f, FREQUENCY (GHz) 1000 400 1.0 VR, REVERSE VOLTAGE (VOLTS) 0.2 0.4 0.6 0.8 1.0 1.2 1.04 1.03 VR = 3.0 Vdc f = 1.0 MHz 1.02 1.01 1.00 0.99 0.98 0.97 0.96 -75 f, FREQUENCY (GHz) -50 -25 0 +25 +50 +75 TA, AMBIENT TEMPERATURE (C) Figure 3. Series Resistance Figure 4. Diode Capacitance http://onsemi.com 701 +100 +125 MMDL101T1 Schottky Barrier Diode Schottky barrier diodes are designed primarily for high-efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. * Very Low Capacitance -- Less than 1.0 pF @ Zero Volts * Low Noise Figure -- 6.0 dB Typ @ 1.0 GHz * Device Marking: 4M http://onsemi.com 1.0 pF SCHOTTKY BARRIER DIODE MAXIMUM RATINGS Symbol VR Rating Reverse Voltage Value Unit 7.0 Vdc Max Unit THERMAL CHARACTERISTICS 1 Symbol PD RJA TJ, Tstg Characteristic Total Device Dissipation FR-5 Board,* TA = 25C Derate above 25C 200 mW 1.57 mW/C Thermal Resistance Junction to Ambient 635 C/W -55 to +150 C Junction and Storage Temperature Range 2 PLASTIC SOD-323 CASE 477 1 CATHODE *FR-5 Minimum Pad 2 ANODE ORDERING INFORMATION Device MMDL101T1 Package Shipping SOD-323 3000 / Tape & Reel ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Reverse Breakdown Voltage (IR = 10 A) Min Typ Max 7.0 10 -- -- 0.88 1.0 -- 20 250 -- 6.0 -- -- 0.5 0.6 V(BR)R Diode Capacitance (VR = 0, f = 1.0 MHZ, Note 1) CT Reverse Leakage (VR = 3.0 V) IR Noise Figure (f = 1.0 GHz, Note 2) NF Forward Voltage (IF = 10 mA) VF Unit Volts pF nAdc dB Vdc *Notes on Next Page Semiconductor Components Industries, LLC, 2001 January, 2000 - Rev. 0 702 Publication Order Number: MMDL101T1/D MMDL101T1 TYPICAL CHARACTERISTICS 100 VR = 3.0 Vdc IF, FORWARD CURRENT (mA) IR, REVERSE LEAKAGE ( A) 1.0 0.7 0.5 0.2 0.1 0.07 0.05 TA = 85C MMBD110T1 30 40 50 60 70 80 90 100 110 TA, AMBIENT TEMPERATURE (C) 120 TA = 25C MMBD110T1 0.1 0.3 130 0.4 Figure 1. Reverse Leakage 0.7 0.8 11 LOCAL OSCILLATOR FREQUENCY = 1.0 GHz (Test Circuit Figure 5) 10 0.9 NF, NOISE FIGURE (dB) C, CAPACITANCE (pF) 0.5 0.6 VF, FORWARD VOLTAGE (VOLTS) Figure 2. Forward Voltage 1.0 0.8 0.7 9 8 7 6 5 4 3 2 MMBD110T1 0.6 TA = -40C 1.0 0.02 0.01 10 0 1.0 2.0 3.0 VR, REVERSE VOLTAGE (VOLTS) 4.0 1 0.1 Figure 3. Capacitance MMBD110T1 0.2 0.5 1.0 2.0 5.0 PLO, LOCAL OSCILLATOR POWER (mW) Figure 4. Noise Figure LOCAL OSCILLATOR UHF NOISE SOURCE H.P. 349A DIODE IN TUNED MOUNT NOISE FIGURE METER H.P. 342A IF AMPLIFIER NF = 1.5 dB f = 30 MHz NOTES ON TESTING AND SPECIFICATIONS Note 1 -- CC and CT are measured using a capacitance bridge (Boonton Electronics Model 75A or equivalent). Note 2 -- Noise figure measured with diode under test in tuned diode mount using UHF noise source and local oscillator (LO) frequency of 1.0 GHz. The LO power is adjusted for 1.0 mW. IF amplifier NF = 1.5 dB, f = 30 MHz, see Figure 5. Figure 5. Noise Figure Test Circuit http://onsemi.com 703 10 MMDL301T1 Preferred Device Silicon Hot-Carrier Diodes Schottky Barrier Diode These devices are designed primarily for high-efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low-cost, high-volume consumer and industrial/commercial requirements. They are available in a Surface Mount package. * * * * http://onsemi.com 30 VOLTS SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES Extremely Low Minority Carrier Lifetime - 15 ps (Typ) Very Low Capacitance - 1.5 pF (Max) @ VR = 15 V Low Reverse Leakage - IR = 13 nAdc (Typ) Device Marking: 4T 1 2 PLASTIC SOD-323 CASE 477 MAXIMUM RATINGS (TJ = 125C unless otherwise noted) Symbol VR Rating Reverse Voltage Value Unit 30 Volts Max Unit THERMAL CHARACTERISTICS Symbol PD RJA TJ, Tstg Characteristic Total Device Dissipation FR-5 Board,* TA = 25C Derate above 25C 200 mW 1.57 mW/C Thermal Resistance Junction to Ambient 635 C/W -55 to +150 C Junction and Storage Temperature Range 1 CATHODE 2 ANODE ORDERING INFORMATION Device *FR-5 Minimum Pad MMDL301T1 Package Shipping SOD-323 3000 / Tape & Reel Preferred devices are recommended choices for future use and best overall value. ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 A) Symbol Min Typ Max Unit V(BR)R 30 -- -- Volts Total Capacitance (VR = 15 V, f = 1.0 MHz) Figure 1 CT -- 0.9 1.5 pF Reverse Leakage (VR = 25 V) Figure 3 IR -- 13 200 nAdc Forward Voltage (IF = 1.0 mAdc) Figure 4 VF -- 0.38 0.45 Vdc Forward Voltage (IF = 10 mAdc) Figure 4 VF -- 0.52 0.6 Vdc Semiconductor Components Industries, LLC, 2001 January, 2000 - Rev. 0 704 Publication Order Number: MMDL301T1/D MMDL301T1 TYPICAL ELECTRICAL CHARACTERISTICS 500 f = 1.0 MHz 2.4 , MINORITY CARRIER LIFETIME (ps) C T, TOTAL CAPACITANCE (pF) 2.8 2.0 1.6 1.2 0.8 0.4 0 0 3.0 6.0 18 9.0 12 15 21 VR, REVERSE VOLTAGE (VOLTS) 24 27 400 KRAKAUER METHOD 300 200 100 0 30 0 Figure 1. Total Capacitance 30 40 50 60 70 IF, FORWARD CURRENT (mA) 80 90 100 100 TA = 100C 1.0 IF, FORWARD CURRENT (mA) IR, REVERSE LEAKAGE ( A) 20 Figure 2. Minority Carrier Lifetime 10 75C 0.1 25C 0.01 0.001 10 0 6.0 12 18 VR, REVERSE VOLTAGE (VOLTS) 24 30 10 1.0 0.1 TA = 25C 0.2 Figure 3. Reverse Leakage IF(PEAK) TA = -40C TA = 85C 0.4 0.6 0.8 VF, FORWARD VOLTAGE (VOLTS) 1.0 Figure 4. Forward Voltage CAPACITIVE CONDUCTION IR(PEAK) FORWARD CONDUCTION SINUSOIDAL GENERATOR BALLAST NETWORK (PADS) STORAGE CONDUCTION PADS DUT Figure 5. Krakauer Method of Measuring Lifetime http://onsemi.com 705 SAMPLING OSCILLOSCOPE (50 INPUT) 1.2 ON Semiconductor Switching Diode MMDL6050T1 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit PD 200 mW 1.57 mW/C RJA 635 C/W TJ, Tstg 150 C Peak Forward Surge Current 1 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board,* TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature CASE 477-02, STYLE 1 SOD-323 1 CATHODE **FR-4 Minimum Pad DEVICE MARKING 2 ANODE MMDL6050T1 = 5A ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR) 70 - Vdc Reverse Voltage Leakage Current (VR = 50 Vdc) IR - 0.1 Adc Forward Voltage (IF = 1.0 mAdc) (IF = 100 mAdc) VF 0.55 0.85 0.7 1.1 Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1) trr - 4.0 ns Capacitance (VR = 0 V) C - 2.5 pF OFF CHARACTERISTICS Reverse Breakdown Voltage (I(BR) = 100 Adc) Semiconductor Components Industries, LLC, 2001 June, 2001 - Rev. 1 706 Vdc Publication Order Number: MMDL6050T1/D MMDL6050T1 820 +10 V 2.0 k IF 100 H tp tr 0.1 F IF t trr 10% t 0.1 F 90% DUT 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE IR VR INPUT SIGNAL iR(REC) = 1.0 mA OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr Figure 1. Recovery Time Equivalent Test Circuit TYPICAL CHARACTERISTICS TA = 85C I R , REVERSE CURRENT ( A) 10 TA = -40C 10 TA = 25C 1.0 0.1 0.2 0.4 0.6 0.8 1.0 TA = 125C 1.0 TA = 85C 0.1 TA = 55C 0.01 0.001 1.2 TA = 150C TA = 25C 10 0 20 30 VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 3. Leakage Current 0.68 C D , DIODE CAPACITANCE (pF) I F, FORWARD CURRENT (mA) 100 0.64 0.60 0.56 0.52 0 2.0 4.0 6.0 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance http://onsemi.com 707 8.0 40 50 MMDL770T1 Schottky Barrier Diode Schottky barrier diodes are designed primarily for high-efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. * * * * * * Extremely Low Minority Carrier Lifetime Very Low Capacitance - 1.0 pF @ 20 V Low Reverse Leakage - 200 nA (max) High Reverse Voltage - 70 Volts (min) Available in 8 mm Tape and Reel Device Marking: 5H http://onsemi.com 1.0 pF SCHOTTKY BARRIER DIODE 1 MAXIMUM RATINGS Symbol VR Rating Reverse Voltage Value Unit 70 Vdc Max Unit 2 PLASTIC SOD-323 CASE 477 THERMAL CHARACTERISTICS Symbol PD RJA TJ, Tstg Characteristic Total Device Dissipation FR-5 Board,* TA = 25C Derate above 25C 200 mW 1.57 mW/C Thermal Resistance Junction to Ambient 635 C/W -55 to +150 C Junction and Storage Temperature Range 1 CATHODE *FR-5 Minimum Pad 2 ANODE ORDERING INFORMATION Device MMDL770T1 Semiconductor Components Industries, LLC, 2001 January, 2000 - Rev. 0 708 Package Shipping SOD-323 3000 / Tape & Reel Publication Order Number: MMDL770T1/D MMDL770T1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Reverse Breakdown Voltage (IR = 10 A) Min Typ Max 70 - - - 0.5 1.0 - 9.0 200 Unit V(BR)R Diode Capacitance (VR = 20 Volts, f = 1.0 MHZ) CT Reverse Leakage (VR = 35 V) IR Forward Voltage (IF = 1.0 mAdc) (IF = 10 mA) VF Volts pF nAdc Vdc - 0.7 1.0 TYPICAL CHARACTERISTICS MMBD770T1 1.6 500 , MINORITY CARRIER LIFETIME (ps) CT, TOTAL CAPACITANCE (pF) 2.0 f = 1.0 MHz 1.2 0.8 0.4 0 0 5.0 10 15 20 25 30 35 VR, REVERSE VOLTAGE (VOLTS) 40 45 MMBD770T1 400 KRAKAUER METHOD 300 200 100 0 50 0 10 Figure 1. Total Capacitance 100 MMBD770T1 TA = 100C 1.0 TA = 75C 0.1 80 90 100 Figure 2. Minority Carrier Lifetime IF, FORWARD CURRENT (mA) IR, REVERSE LEAKAGE ( A) 10 30 50 70 40 60 IF, FORWARD CURRENT (mA) 20 MMBD770T1 10 TA = 85C TA = -40C 1.0 0.01 0.001 TA = 25C 0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) 40 50 0.1 Figure 3. Reverse Leakage TA = 25C 0.2 0.4 0.8 1.2 VF, FORWARD VOLTAGE (VOLTS) Figure 4. Forward Voltage http://onsemi.com 709 1.6 2.0 ON Semiconductor High-Speed Switching Diode MMDL914T1 ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Reverse Voltage VR 100 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit PD 200 mW 1.57 mW/C RJA 635 C/W TJ, Tstg 150 C Peak Forward Surge Current Unit 1 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board,* TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature CASE 477-02, STYLE 1 SOD-323 1 CATHODE **FR-4 Minimum Pad DEVICE MARKING 2 ANODE MMDL914T1 = 5D ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR) 100 - Vdc - - 25 5.0 nAdc Adc OFF CHARACTERISTICS Reverse Breakdown Voltage (IR = 100 Adc) Reverse Voltage Leakage Current (VR = 20 Vdc) (VR = 75 Vdc) IR Diode Capacitance (VR = 0, f = 1.0 MHz) CT - 4.0 pF Forward Voltage (IF = 10 mAdc) VF - 1.0 Vdc Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1) trr - 4.0 ns Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 June, 2001 - Rev. 1 710 Publication Order Number: MMDL914T1/D MMDL914T1 820 +10 V 2.0 k IF 100 H tp tr 0.1 F IF t trr 10% t 0.1 F 90% DUT 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE IR VR INPUT SIGNAL iR(REC) = 1.0 mA OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr Figure 1. Recovery Time Equivalent Test Circuit TA = 85C I R , REVERSE CURRENT ( A) 10 TA = -40C 10 TA = 25C 1.0 0.1 0.2 0.4 0.6 0.8 1.0 TA = 125C 1.0 TA = 85C 0.1 TA = 55C 0.01 0.001 1.2 TA = 150C TA = 25C 10 0 20 30 VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 3. Leakage Current 0.68 C D , DIODE CAPACITANCE (pF) I F, FORWARD CURRENT (mA) 100 0.64 0.60 0.56 0.52 0 2.0 4.0 6.0 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance http://onsemi.com 711 8.0 40 50 MMPQ2222A Preferred Device Quad General Purpose Transistor NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit VCEO 40 Vdc VCB 75 Vdc Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage VEB Collector Current - Continuous IC 5.0 Vdc 500 mAdc 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 Four Transistors Equal Power Total Power Dissipation @ TA = 25C Derate above 25C PD Total Power Dissipation @ TC = 25C Derate above 25C PD Operating and Storage Junction Temperature Range Watts 1.0 8.0 TJ, Tstg mW/C Watts 2.4 19.2 mW/C -55 to +150 C SO-16 CASE 751B STYLE 4 MARKING DIAGRAM MMPQ2222A AWLYWW MMPQ2222A = Specific Device Code A = Assembly Location WL = Wafer Lot Y = Year WW = Work Week ORDERING INFORMATION Device Package Shipping MMPQ2222A SO-16 48 Units/Rail Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 January, 2001 - Rev. 0 712 Publication Order Number: MMPQ2222A/D MMPQ2222A ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (Note 1.) (IC = 10 mAdc, IB = 0) V(BR)CEO 40 - - Vdc Collector-Base Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO 75 - - Vdc Emitter-Base Breakdown Voltage (IB = 10 Adc, IC = 0) V(BR)EBO 5.0 - - - - - Vdc - - - - 50 10 - - 100 35 50 75 100 40 50 - - - - - - - - - 300 - - - - - - 0.3 1.0 - - - - 1.2 2.0 fT 200 350 - MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cob - 4.5 - pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cib - 17 - pF Turn-On Time (VCC = 30 Vdc, VBE(off) = -0.5 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) ton - 25 - ns Turn-Off Time (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) toff - 250 - ns OFF CHARACTERISTICS Collector Cutoff Current (VCB = 50 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) IEBO nAdc nAdc ON CHARACTERISTICS DC Current Gain (Note 1.) (IC = 100 A, VCE = 10 V) (IC = 1.0 mA, VCE = 10 V) (IC = 10 mA, VCE = 10 V) (IC = 150 mA, VCE = 10 V) (IC = 500 mA, VCE = 10 V) (IC = 150 mA, VCE = 1.0 V) hFE Collector-Emitter Saturation Voltage (Note 1.) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VCE(sat) Base-Emitter Saturation Voltage (Note 1.) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VBE(sat) - Vdc Vdc DYNAMIC CHARACTERISTICS Current-Gain - Bandwidth Product (Note 1.) (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) SWITCHING CHARACTERISTICS 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. http://onsemi.com 713 ON Semiconductor Quad Switching Transistor MMPQ2369 NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 15 Vdc Collector-Base Voltage VCB 40 Vdc Emitter-Base Voltage VEB 4.5 Vdc IC 500 mAdc Collector Current -- Continuous Total Power Dissipation @ TA = 25C Derate above 25C PD Total Power Dissipation @ TC = 25C Derate above 25C PD Operating and Storage Junction Temperature Range 1 Each Transistor Four Transistors Equal Power 0.4 3.2 0.72 6.4 0.66 5.3 1.92 15.4 CASE 751B-05, STYLE 4 SO-16 Watts mW/C Watts TJ, Tstg mW/C C -55 to +150 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) V(BR)CEO 15 -- -- Vdc Collector-Base Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO 40 -- -- Vdc Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO 4.5 -- -- Vdc ICBO -- -- 0.4 Adc Characteristic 16 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 OFF CHARACTERISTICS Collector Cutoff Current (VCB = 20 Vdc, IE = 0) 1. Pulse Test: Pulse Width 300 s; Duty Cycle 2.0%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 714 Publication Order Number: MMPQ2369/D MMPQ2369 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Characteristic Min Typ Max 40 20 -- -- -- -- Unit ON CHARACTERISTICS DC Current Gain(1) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 2.0 Vdc) hFE -- Collector-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) VCE(sat) -- -- 0.25 Vdc Base-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) VBE(sat) -- -- 0.9 Vdc fT 450 550 -- MHz Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cob -- 2.5 4.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cib -- 3.0 5.0 pF Turn-On Time (VCC = 3.0 Vdc, VEB(off) = 1.5 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc) ton -- 9.0 -- ns Turn-Off Time (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc, IB2 = 1.5 mAdc) toff -- 15 -- ns DYNAMIC CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) SWITCHING CHARACTERISTICS 1. Pulse Test: Pulse Width 300 s; Duty Cycle 2.0%. http://onsemi.com 715 ON Semiconductor Quad Memory Driver Transistor MMPQ3467 ON Semiconductor Preferred Device PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO -40 Vdc Collector-Base Voltage VCB -40 Vdc Emitter-Base Voltage VEB -5.0 Vdc IC -1.0 Adc Collector Current -- Continuous Each Transistor Four Transistors Equal Power Power Dissipation @ TA = 25C Derate above 25C PD 0.52 4.2 1.2 9.6 Watts mW/C Power Dissipation @ TC = 25C Derate above 25C PD 1.0 8.0 2.5 20 Watts mW/C Operating and Storage Junction Temperature Range TJ, Tstg 16 1 CASE 751B-05, STYLE 4 SO-16 C -55 to +150 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage(1) (IC = -10 mAdc, IB = 0) V(BR)CEO -40 -- -- Vdc Collector-Base Breakdown Voltage (IC = -10 Adc, IE = 0) V(BR)CBO -40 -- -- Vdc Emitter-Base Breakdown Voltage (IE = -10 Adc, IC = 0) V(BR)EBO -5.0 -- -- Vdc Collector Cutoff Current (VCB = -30 Vdc, IE = 0) ICBO -- -- -200 nAdc Emitter Cutoff Current (VEB = -3.0 Vdc, IC = 0) IEBO -- -- -200 nAdc OFF CHARACTERISTICS 1. Pulse Test: Pulse Width 300 s; Duty Cycle 2.0%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 3 716 Publication Order Number: MMPQ3467/D MMPQ3467 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Min Typ Max Unit hFE 20 -- -- -- Collector-Emitter Saturation Voltage(1) (IC = -500 mAdc, IB = -50 mAdc) VCE(sat) -- -0.23 -0.5 Vdc Base-Emitter Saturation Voltage(1) (IC = -500 mAdc, IB = -50 mAdc) VBE(sat) -- -0.9 -1.2 Vdc fT -- 190 -- MHz Output Capacitance (VCB = -10 Vdc, IE = 0, f = 1.0 MHz) Cob -- 10 -- pF Input Capacitance (VEB = -0.5 Vdc, IC = 0, f = 1.0 MHz) Cib -- 55 -- pF Turn-On Time (IC = -500 mAdc, IB1 = -50 mAdc) ton -- 20 -- ns Turn-Off Time (IC = -500 mAdc, IB1 = IB2 = -50 mAdc) toff -- 60 -- ns Characteristic ON CHARACTERISTICS DC Current Gain(1) (IC = -500 mAdc, VCE = -1.0 Vdc) DYNAMIC CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = -50 mAdc, VCE = -10 Vdc, f = 100 MHz) SWITCHING CHARACTERISTICS 1. Pulse Test: Pulse Width 300 s; Duty Cycle 2.0%. http://onsemi.com 717 ON Semiconductor Quad Amplifier/Switch Transistor MMPQ3904 NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCB 60 Vdc Emitter-Base Voltage VEB 6.0 Vdc IC 200 mAdc Collector Current -- Continuous Total Power Dissipation @ TA = 25C Derate above 25C PD Total Power Dissipation @ TC = 25C Derate above 25C PD Operating and Storage Junction Temperature Range 1 Each Transistor Four Transistors Equal Power 0.4 3.2 800 6.4 0.66 5.3 1.92 15.4 CASE 751B-05, STYLE 4 SO-16 mW mW/C Watts TJ, Tstg mW/C C -55 to +150 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic 16 Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 -- -- Vdc Collector-Base Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO 60 -- -- Vdc Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO 6.0 -- -- Vdc Collector Cutoff Current (VCB = 40 Vdc, IE = 0) ICBO -- -- 50 nAdc Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) IEBO -- -- 50 nAdc 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 OFF CHARACTERISTICS 1. Pulse Test: Pulse Width 300 s; Duty Cycle 2.0%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 2 718 Publication Order Number: MMPQ3904/D MMPQ3904 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Characteristic ON Min Typ Max 30 50 75 90 160 200 -- -- -- Unit CHARACTERISTICS(1) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) hFE -- Collector-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) VCE(sat) -- 0.1 0.2 Vdc Base-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) VBE(sat) -- 0.65 0.85 Vdc fT 250 300 -- MHz Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cob -- 2.0 4.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cib -- 4.0 8.0 pF Turn-On Time (IC = 10 Vdc, VBE(off) = -0.5 Vdc, IB1 = 1.0 mAdc) ton -- 37 -- ns Turn-Off Time (IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc) toff -- 136 -- ns DYNAMIC CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) SWITCHING CHARACTERISTICS 1. Pulse Test: Pulse Width 300 s; Duty Cycle 2.0%. http://onsemi.com 719 ON Semiconductor Quad Amplifier/Switch Transistor MMPQ3906 ON Semiconductor Preferred Device PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO -40 Vdc Collector-Base Voltage VCB -40 Vdc Emitter-Base Voltage VEB -5.0 Vdc IC -200 mAdc Collector Current -- Continuous Each Transistor Four Transistors Equal Power Power Dissipation @ TA = 25C Derate above 25C PD 0.4 3.2 800 6.4 mW mW/C Power Dissipation @ TC = 25C Derate above 25C PD 0.66 5.3 1.92 15.4 Watts mW/C Operating and Storage Junction Temperature Range TJ, Tstg 16 1 CASE 751B-05, STYLE 4 SO-16 C -55 to +150 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage(1) (IC = -1.0 mAdc, IB = 0) V(BR)CEO -40 -- -- Vdc Collector-Base Breakdown Voltage (IC = -10 Adc, IE = 0) V(BR)CBO -40 -- -- Vdc Emitter-Base Breakdown Voltage (IE = -10 Adc, IC = 0) V(BR)EBO -5.0 -- -- Vdc Collector Cutoff Current (VCB = -30 Vdc, IE = 0) ICBO -- -- -50 nAdc Emitter Cutoff Current (VEB = -4.0 Vdc, IC = 0) IEBO -- -- -50 nAdc OFF CHARACTERISTICS 1. Pulse Test: Pulse Width 300 s; Duty Cycle 2.0%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 2 720 Publication Order Number: MMPQ3906/D MMPQ3906 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Characteristic ON Min Typ Max 40 60 75 160 180 200 -- -- -- Unit CHARACTERISTICS(1) DC Current Gain (IC = -0.1 mAdc, VCE = -1.0 Vdc) (IC = -1.0 mAdc, VCE = -1.0 Vdc) (IC = -10 mAdc, VCE = -1.0 Vdc) hFE -- Collector-Emitter Saturation Voltage (IC = -10 mAdc, IB = -1.0 mAdc) VCE(sat) -- -0.1 -0.25 Vdc Base-Emitter Saturation Voltage (IC = -10 mAdc, IB = -1.0 mAdc) VBE(sat) -- -0.65 -0.85 Vdc fT 200 250 -- MHz Output Capacitance (VCB = -5.0 Vdc, IE = 0, f = 1.0 MHz) Cob -- 3.3 4.5 pF Input Capacitance (VEB = -0.5 Vdc, IC = 0, f = 1.0 MHz) Cib -- 4.8 10 pF Turn-On Time (IC = -10 mAdc, VBE(off) = 0.5 Vdc, IB1 = -1.0 mAdc) ton -- 43 -- ns Turn-Off Time (IC = -10 mAdc, IB1 = IB2 = -1.0 mAdc) toff -- 155 -- ns DYNAMIC CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = -10 mAdc, VCE = -20 Vdc, f = 100 MHz) SWITCHING CHARACTERISTICS 1. Pulse Test: Pulse Width 300 s; Duty Cycle 2.0%. http://onsemi.com 721 ON Semiconductor MMPQ6700 Quad Complementary Pair Transistor Voltage and current are negative for PNP transistors PNP/NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit VCEO 40 Vdc Collector-Base Voltage VCB 40 Vdc Emitter-Base Voltage VEB 5.0 Vdc IC 200 mAdc Collector-Emitter Voltage Collector Current -- Continuous 1 Each Transistor Four Transistors Equal Power CASE 751B-05, STYLE 4 SO-16 Total Power Dissipation @ TA = 25C Derate above 25C PD 0.4 3.2 0.72 6.4 Watts mW/C Total Power Dissipation @ TC = 25C Derate above 25C PD 0.66 5.3 1.92 15.4 Watts mW/C Operating and Storage Junction Temperature Range 16 TJ, Tstg -55 to +150 C 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) V(BR)CEO 40 -- Vdc Collector-Base Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO 40 -- Vdc Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) OFF CHARACTERISTICS V(BR)EBO 5.0 -- Vdc Collector Cutoff Current (VCB = 30 Vdc, IE = 0) ICBO -- 50 nAdc Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) IEBO -- 50 nAdc 35 50 70 -- -- -- ON CHARACTERISTICS(1) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) hFE -- Collector-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) VCE(sat) -- 0.25 Vdc Base-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) VBE(sat) -- 0.9 Vdc fT 200 -- MHz Cob -- 4.5 pF -- -- 10 8.0 DYNAMIC CHARACTERISTICS Current-Gain -- Bandwidth Product(1) (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cib PNP NPN pF 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 722 Publication Order Number: MMPQ6700/D MMSD103T1 Preferred Device High Voltage Switching Diode MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 250 Vdc Peak Forward Current IF 200 mAdc IFM(surge) 625 mAdc Characteristic Symbol Value Unit Forward Power Dissipation, FR-5 Board (Note 1.) @ TA = 25C Derate above 25C PF 400 3.2 mW mW/C Peak Forward Surge Current http://onsemi.com 1 Cathode 2 Anode THERMAL CHARACTERISTICS MARKING DIAGRAM 2 JS Thermal Resistance, Junction to Case RJL 174 C/W Thermal Resistance, Junction to Ambient RJA 492 C/W CASE 425-04, STYLE 1 SOD-123 Junction Temperature TJ 125 Max C JS = Specific Device Code Storage Temperature Range Tstg -55 to +150 C 1 1. FR-5 = 1.0 0.75 0.062 in. ORDERING INFORMATION Device Package Shipping MMSD103T1 SOD-123 3000 / Tape & Reel Preferred devices are recommended choices for future use and best overall value. ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max -- -- 1.0 100 250 -- -- -- 1000 1250 Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 200 Vdc) (VR = 200 Vdc, TJ = 150C) Adc IR Reverse Breakdown Voltage (IBR = 100 Adc) V(BR) Vdc Forward Voltage (IF = 100 mAdc) (IF = 200 mAdc) VF Diode Capacitance (VR = 0, f = 1.0 MHz) CD -- 5.0 pF Reverse Recovery Time (IF = IR = 30 mAdc, RL = 100 ) trr -- 50 ns Semiconductor Components Industries, LLC, 2001 August, 2000 - Rev. 0 723 mV Publication Order Number: MMSD103T1/D MMSD103T1 820 +10 V 2.0 k IF 100 H tp tr 0.1 F IF t trr 10% t 0.1 F 90% D.U.T. 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE VR iR(REC) = 3.0 mA IR OUTPUT PULSE (IF = IR = 30 mA; MEASURED at iR(REC) = 3.0 mA) INPUT SIGNAL Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 30 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA. Notes: 3. tp trr Figure 1. Recovery Time Equivalent Test Circuit 3500 7000 6000 2500 REVERSE CURRENT (nA) FORWARD VOLTAGE (mV) 3000 TA = -55C 2000 1500 TA = 155C 1000 TA = 25C 500 0 0.1 0.2 0.5 1 2 5 10 20 50 100 200 TA = 155C 5000 4000 3000 6 5 4 3 2 1 0 TA = 25C TA = -55C 1 FORWARD CURRENT (mA) 2 5 10 20 50 REVERSE VOLTAGE (V) Figure 2. Forward Voltage Figure 3. Reverse Leakage http://onsemi.com 724 100 200 300 ON Semiconductor MMSD301T1 MMSD701T1 SOD-123 Schottky Barrier Diodes The MMSD301T1, and MMSD701T1 devices are spin-offs of our popular MMBD301LT1, and MMBD701LT1 SOT-23 devices. They are designed for high-efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. * Extremely Low Minority Carrier Lifetime * Very Low Capacitance * Low Reverse Leakage ON Semiconductor Preferred Devices 2 1 CASE 425-04, STYLE 1 SOD-123 MAXIMUM RATINGS Rating Symbol Value Unit VR 30 70 Vdc Forward Power Dissipation TA = 25C PF 225 mW Junction Temperature TJ -55 to +125 C Storage Temperature Range Tstg -55 to +150 C Reverse Voltage MMSD301T1 MMSD701T1 1 Cathode 2 Anode DEVICE MARKING MMSD301T1 = XT, MMSD701T1 = XH ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 A) Diode Capacitance (VR = 0, f = 1.0 MHz, Note 1) Symbol Typ Max 30 70 -- -- -- -- -- -- 0.9 0.5 1.5 1.0 -- -- 0.9 0.5 1.5 1.0 -- -- 13 9.0 200 200 -- -- -- -- 0.38 0.52 0.42 0.7 0.45 0.6 0.5 1.0 V(BR)R MMSD301T1 MMSD701T1 MMSD301T1 MMSD701T1 Reverse Leakage (VR = 25 V) (VR = 35 V) MMSD301T1 MMSD701T1 Unit Volts CT MMSD301T1 MMSD701T1 Total Capacitance (VR = 15 Volts, f = 1.0 MHz) (VR = 20 Volts, f = 1.0 MHz) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mA) (IF = 1.0 mAdc) (IF = 10 mA) Min pF CT pF IR VF MMSD301T1 MMSD701T1 nAdc nAdc Vdc Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 September, 2001 - Rev. 2 725 Publication Order Number: MMSD301T1/D MMSD301T1 MMSD701T1 TYPICAL CHARACTERISTICS MMSD301T1 MMSD301T1 2.4 500 , MINORITY CARRIER LIFETIME (ps) CT, TOTAL CAPACITANCE (pF) 2.8 f = 1.0 MHz 2.0 1.6 1.2 0.8 0.4 0 0 3.0 6.0 9.0 12 15 18 21 VR, REVERSE VOLTAGE (VOLTS) 24 27 MMSD301T1 400 KRAKAUER METHOD 300 200 100 0 30 0 Figure 1. Total Capacitance 100 TA = 100C TA = 75C 0 6.0 12 18 VR, REVERSE VOLTAGE (VOLTS) 40 60 30 50 70 IF, FORWARD CURRENT (mA) 80 90 100 MMSD301T1 TA = -40C 10 TA = 85C 1.0 TA = 25C 0.01 0.001 IF, FORWARD CURRENT (mA) IR, REVERSE LEAKAGE ( A) MMSD301T1 0.1 20 Figure 2. Minority Carrier Lifetime 10 1.0 10 24 30 0.1 TA = 25C 0.2 Figure 3. Reverse Leakage 0.4 0.6 0.8 VF, FORWARD VOLTAGE (VOLTS) Figure 4. Forward Voltage http://onsemi.com 726 1.0 1.2 MMSD301T1 MMSD701T1 TYPICAL CHARACTERISTICS MMSD701T1 MMSD701T1 1.6 500 , MINORITY CARRIER LIFETIME (ps) CT, TOTAL CAPACITANCE (pF) 2.0 f = 1.0 MHz 1.2 0.8 0.4 0 0 5.0 10 15 20 25 30 35 VR, REVERSE VOLTAGE (VOLTS) 40 45 MMSD701T1 400 KRAKAUER METHOD 300 200 100 0 50 0 10 Figure 5. Total Capacitance 100 MMSD701T1 TA = 100C 1.0 TA = 75C 0.1 80 90 100 Figure 6. Minority Carrier Lifetime IF, FORWARD CURRENT (mA) IR, REVERSE LEAKAGE ( A) 10 30 50 70 40 60 IF, FORWARD CURRENT (mA) 20 MMSD701T1 10 TA = 85C TA = -40C 1.0 0.01 0.001 TA = 25C 0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) 40 50 0.1 Figure 7. Reverse Leakage TA = 25C 0.2 0.4 0.8 1.2 VF, FORWARD VOLTAGE (VOLTS) Figure 8. Forward Voltage http://onsemi.com 727 1.6 2.0 MMSD4148T1 Switching Diode The switching diode has the following features: * * * * SOD-123 Surface Mount Package High Breakdown Voltage Fast Speed Switching Time Available in 8 mm Tape and Reel http://onsemi.com 1 CATHODE 2 ANODE MAXIMUM RATINGS 2 Rating Symbol Value Unit Continuous Reverse Voltage VR 100 Vdc Peak Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W PD 300 mW 2.4 mW/C RJA 417 C/W Device Package Shipping TJ, Tstg -55 to +150 C MMSD4148T1 SOD-123 3000 / Tape & Reel Max Unit Peak Forward Surge Current 1 PLASTIC SOD-123 CASE 425 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board TA = 25C Derate above 25C (1) Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate (2) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature Range DEVICE MARKING 5I ORDERING INFORMATION ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min V(BR) 100 -- Vdc IR -- -- 25 5.0 nAdc Adc Forward Voltage (IF = 10 mAdc) VF -- 1000 mVdc Diode Capacitance (VR = 0 Vdc, f = 1.0 MHz) CD -- 4.0 pF Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1) trr -- 4.0 ns OFF CHARACTERISTICS Reverse Breakdown Voltage (IBR = 100 Adc) Reverse Voltage Leakage Current (VR = 20 Vdc) (VR = 75 Vdc) 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina Semiconductor Components Industries, LLC, 2001 March, 2000 - Rev. 2 728 Publication Order Number: MMSD4148T1/D MMSD4148T1 820 +10 V 2k 100 H 0.1 F IF tr tp IF t trr 10% 0.1 F DUT 50 OUTPUT PULSE GENERATOR 90% 50 INPUT SAMPLING OSCILLOSCOPE IR VR INPUT SIGNAL t iR(REC) = 1 mA OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr Figure 1. Recovery Time Equivalent Test Circuit 100 10 I R, REVERSE CURRENT (A) 10 TA = 85C TA = -40C 1.0 0.1 0.2 0.4 0.6 0.8 TA = 125C 1.0 TA = 85C 0.1 TA = 55C 0.01 TA = 25C 1.0 0.001 1.2 TA = 25C 0 10 20 30 VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 3. Leakage Current 0.68 CD , DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) TA = 150C 0.64 0.60 0.56 0.52 0 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance http://onsemi.com 729 8 40 50 MMSD71RKT1 Switching Diode The switching diode has the following features: * * * * SOD-123 Surface Mount Package High Breakdown Voltage Fast Speed Switching Time Available in 8 mm Tape and Reel http://onsemi.com 1 CATHODE 2 ANODE MAXIMUM RATINGS 2 Rating Symbol Value Unit Continuous Reverse Voltage VR 80 Vdc Peak Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W PD 300 mW 2.4 mW/C RJA 417 C/W Device Package Shipping TJ, Tstg -55 to +150 C MMSD71RKT1 SOD-123 3000 / Tape & Reel Max Unit Peak Forward Surge Current 1 PLASTIC SOD-123 CASE 425 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board TA = 25C Derate above 25C (1) Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate (2) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature Range DEVICE MARKING 6S ORDERING INFORMATION ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min V(BR) 80 - Vdc IR - 500 nAdc Forward Voltage (IF = 100 mAdc) VF - 1200 mVdc Diode Capacitance (VR = 0.5 Vdc, f = 1.0 MHz) CD - 2.0 pF Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1) trr - 4.0 ns OFF CHARACTERISTICS Reverse Breakdown Voltage (IBR = 100 Adc) Reverse Voltage Leakage Current (VR = 80 Vdc) 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina Semiconductor Components Industries, LLC, 2001 October, 2001 - Rev. 1 730 Publication Order Number: MMSD71RKT1/D MMSD71RKT1 820 +10 V 2k 100 H 0.1 F IF tr tp IF t trr 10% 0.1 F DUT 50 OUTPUT PULSE GENERATOR 90% 50 INPUT SAMPLING OSCILLOSCOPE IR VR INPUT SIGNAL t iR(REC) = 1 mA OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr Figure 1. Recovery Time Equivalent Test Circuit 100 10 I R, REVERSE CURRENT (A) 10 TA = 85C TA = -40C 1.0 0.1 0.2 0.4 0.6 0.8 TA = 125C 1.0 TA = 85C 0.1 TA = 55C 0.01 TA = 25C 1.0 0.001 1.2 TA = 25C 0 10 20 30 VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 3. Leakage Current 0.68 CD , DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) TA = 150C 0.64 0.60 0.56 0.52 0 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance http://onsemi.com 731 8 40 50 MMSD914T1 Preferred Device Switching Diode The switching diode has the following features: * SOD-123 Surface Mount Package * High Breakdown Voltage * Fast Speed Switching Time http://onsemi.com 1 CATHODE 2 ANODE MAXIMUM RATINGS 2 Rating Symbol Value Unit Continuous Reverse Voltage VR 100 Vdc Peak Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W PD 300 mW 2.4 mW/C RJA 417 C/W TJ, Tstg -55 to +150 C Peak Forward Surge Current 1 PLASTIC SOD-123 CASE 425 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board TA = 25C Derate above 25C (1) Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate (2) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature Range DEVICE MARKING 5D ORDERING INFORMATION Device MMSD914T1 Package Shipping SOD-123 3000 / Tape & Reel Max Unit ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min V(BR) 100 -- Vdc IR -- -- 25 5.0 nAdc Adc Forward Voltage (IF = 10 mAdc) VF -- 1000 mVdc Diode Capacitance (VR = 0 Vdc, f = 1.0 MHz) CD -- 4.0 pF Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1) trr -- 4.0 ns OFF CHARACTERISTICS Reverse Breakdown Voltage (IBR = 100 Adc) Reverse Voltage Leakage Current (VR = 20 Vdc) (VR = 75 Vdc) 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 March, 2000 - Rev. 3 732 Publication Order Number: MMSD914T1/D MMSD914T1 820 +10 V 2k 100 H 0.1 F IF tr tp IF t trr 10% 0.1 F DUT 50 OUTPUT PULSE GENERATOR 90% 50 INPUT SAMPLING OSCILLOSCOPE IR VR INPUT SIGNAL t iR(REC) = 1 mA OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr Figure 1. Recovery Time Equivalent Test Circuit 100 10 I R, REVERSE CURRENT (A) 10 TA = 85C TA = -40C 1.0 0.1 0.2 0.4 0.6 0.8 TA = 125C 1.0 TA = 85C 0.1 TA = 55C 0.01 TA = 25C 1.0 0.001 1.2 TA = 25C 10 0 20 30 VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 3. Leakage Current 0.68 CD , DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) TA = 150C 0.64 0.60 0.56 0.52 0 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance http://onsemi.com 733 8 40 50 MMUN2111LT1 Series Preferred Devices Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications. * * * * * Simplifies Circuit Design Reduces Board Space Reduces Component Count The SOT-23 package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. Available in 8 mm embossed tape and reel. Use the Device Number to order the 7 inch/3000 unit reel. Replace "T1" with "T3" in the Device Number to order the 13 inch/10,000 unit reel. MAXIMUM RATINGS (TA = 25C unless otherwise noted) Rating Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc Symbol Max Unit PD 246 (Note 1.) 400 (Note 2.) 1.5 (Note 1.) 2.0 (Note 2.) mW Collector Current http://onsemi.com PIN 1 BASE (INPUT) PIN 3 COLLECTOR (OUTPUT) R1 R2 PIN 2 EMITTER (GROUND) 3 1 2 SOT-23 CASE 318 STYLE 6 MARKING DIAGRAM A6x M THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance - Junction-to-Ambient RJA C/W 508 (Note 1.) 311 (Note 2.) C/W A6x = Device Marking x = A - L (See Page 735) M = Date Code DEVICE MARKING INFORMATION Thermal Resistance - Junction-to-Lead RJL 174 (Note 1.) 208 (Note 2.) C/W Junction and Storage Temperature Range TJ, Tstg -55 to +150 C See specific marking information in the device marking table on page 735 of this data sheet. Preferred devices are recommended choices for future use and best overall value. 1. FR-4 @ Minimum Pad 2. FR-4 @ 1.0 x 1.0 inch Pad Semiconductor Components Industries, LLC, 2001 January, 2001 - Rev. 1 734 Publication Order Number: MMUN2111LT1/D MMUN2111LT1 Series DEVICE MARKING AND RESISTOR VALUES Device Package Marking R1 (K) R2 (K) Shipping MMUN2111LT1 MMUN2111LT3 SOT-23 A6A 10 10 3000/Tape & Reel 10,000/Tape & Reel MMUN2112LT1 MMUN2112LT3 SOT-23 A6B 22 22 3000/Tape & Reel 10,000/Tape & Reel MMUN2113LT1 MMUN2113LT3 SOT-23 A6C 47 47 3000/Tape & Reel 10,000/Tape & Reel MMUN2114LT1 MMUN2114LT3 SOT-23 A6D 10 47 3000/Tape & Reel 10,000/Tape & Reel MMUN2115LT1 (Note 3.) MMUN2115LT3 SOT-23 A6E 10 3000/Tape & Reel 10,000/Tape & Reel MMUN2116LT1 (Note 3.) MMUN2116LT3 SOT-23 A6F 4.7 3000/Tape & Reel 10,000/Tape & Reel MMUN2130LT1 (Note 3.) MMUN2130LT3 SOT-23 A6G 1.0 1.0 3000/Tape & Reel 10,000/Tape & Reel MMUN2131LT1 (Note 3.) MMUN2131LT3 SOT-23 A6H 2.2 2.2 3000/Tape & Reel 10,000/Tape & Reel MMUN2132LT1 (Note 3.) MMUN2132LT3 SOT-23 A6J 4.7 4.7 3000/Tape & Reel 10,000/Tape & Reel MMUN2133LT1 (Note 3.) MMUN2133LT3 SOT-23 A6K 4.7 47 3000/Tape & Reel 10,000/Tape & Reel MMUN2134LT1 (Note 3.) MMUN2134LT3 SOT-23 A6L 22 47 3000/Tape & Reel 10,000/Tape & Reel ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO - - 100 nAdc Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO - - 500 nAdc Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO - - - - - - - - - - - - - - - - - - - - - - 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 mAdc Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) V(BR)CBO 50 - - Vdc Collector-Emitter Breakdown Voltage (Note 4.) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 - - Vdc OFF CHARACTERISTICS MMUN2111LT1 MMUN2112LT1 MMUN2113LT1 MMUN2114LT1 MMUN2115LT1 MMUN2116LT1 MMUN2130LT1 MMUN2131LT1 MMUN2132LT1 MMUN2133LT1 MMUN2134LT1 3. New devices. Updated curves to follow in subsequent data sheets. 4. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% http://onsemi.com 735 MMUN2111LT1 Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 60 100 140 140 250 250 5.0 15 27 140 130 - - - - - - - - - - - VCE(sat) - - 0.25 - - - - - - - - - - - - - - - - - - - - - - 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 VOH 4.9 - - Vdc R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 k R1/R2 0.8 0.17 - 0.8 0.055 1.0 0.21 - 1.0 0.1 1.2 0.25 - 1.2 0.185 ON CHARACTERISTICS (Note 5.) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MMUN2111LT1 MMUN2112LT1 MMUN2113LT1 MMUN2114LT1 MMUN2115LT1 MMUN2116LT1 MMUN2130LT1 MMUN2131LT1 MMUN2132LT1 MMUN2133LT1 MMUN2134LT1 Collector-Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA) (IC = 10 mA, IB = 5 mA) MMUN2130LT1/MMUN2131LT1 (IC = 10 mA, IB = 1 mA) MMUN2115LT1/MMUN2116LT1/ MMUN2132LT1/MMUN2133LT1/MMUN2134LT1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k) Input Resistor VOL MMUN2111LT1 MMUN2112LT1 MMUN2114LT1 MMUN2115LT1 MMUN2116LT1 MMUN2130LT1 MMUN2131LT1 MMUN2132LT1 MMUN2133LT1 MMUN2134LT1 MMUN2113LT1 Vdc Vdc MMUN2115LT1 MMUN2116LT1 MMUN2131LT1 MMUN2132LT1 MMUN2130LT1 MMUN2111LT1 MMUN2112LT1 MMUN2113LT1 MMUN2114LT1 MMUN2115LT1 MMUN2116LT1 MMUN2130LT1 MMUN2131LT1 MMUN2132LT1 MMUN2133LT1 MMUN2134LT1 Resistor Ratio MMUN2111LT1/MMUN2112LT1/MMUN2113LT1 MMUN2114LT1 MMUN2115LT1/MMUN2116LT1 MMUN2130LT1/MMUN2131LT1/MMUN2132LT1 MMUN2133LT1 5. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% http://onsemi.com 736 MMUN2111LT1 Series VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS MMUN2111LT1 PD , POWER DISSIPATION (MILLIWATTS) 250 200 150 100 RJA = 625C/W 50 0 -50 0 50 100 150 1 IC/IB=10 TA=-25C 75C 0.1 0.01 20 0 TA, AMBIENT TEMPERATURE (C) Cob , CAPACITANCE (pF) h FE, DC CURRENT GAIN (NORMALIZED) TA=75C 25C -25C 100 10 IC, COLLECTOR CURRENT (mA) 3 2 1 0 100 f = 1 MHz lE = 0 V TA = 25C 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 3. DC Current Gain 100 25C VO = 0.2 V TA=-25C 10 1 0.1 0.01 0.001 50 Figure 4. Output Capacitance Vin, INPUT VOLTAGE (VOLTS) IC , COLLECTOR CURRENT (mA) 75C 80 4 VCE = 10 V 100 60 Figure 2. VCE(sat) versus IC 1000 1 40 IC, COLLECTOR CURRENT (mA) Figure 1. Derating Curve 10 25C TA=-25C 10 25C 75C 1 VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 Figure 5. Output Current versus Input Voltage 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 6. Input Voltage versus Output Current http://onsemi.com 737 50 MMUN2111LT1 Series 1000 10 IC/IB=10 h FE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS MMUN2112LT1 TA=-25C 25C 1 75C 0.1 0.01 0 20 40 60 IC, COLLECTOR CURRENT (mA) VCE = 10 V TA=75C 100 10 80 1 10 Figure 8. DC Current Gain 100 IC , COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25C 2 1 0 75C 25C TA=-25C 10 1 0.1 VO = 5 V 0.01 0.001 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 0 1 2 3 4 VO = 0.2 V TA=-25C 25C 10 75C 1 0 10 6 7 8 9 Figure 10. Output Current versus Input Voltage 100 0.1 5 Vin, INPUT VOLTAGE (VOLTS) Figure 9. Output Capacitance Vin, INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 4 0 100 IC, COLLECTOR CURRENT (mA) Figure 7. VCE(sat) versus IC 3 25C -25C 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 11. Input Voltage versus Output Current http://onsemi.com 738 10 MMUN2111LT1 Series 1 1000 IC/IB=10 TA=-25C 25C 75C 0.1 0.01 h FE , CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS MMUN2113LT1 0 10 20 30 IC, COLLECTOR CURRENT (mA) TA=75C 25C -25C 100 10 40 1 10 IC, COLLECTOR CURRENT (mA) Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 1 100 0.6 0.4 0.2 0 0 TA=75C -25C 1 0.1 0.01 VO = 5 V 0 1 2 3 4 VO = 2 V TA=-25C 25C 75C 1 0 10 6 7 8 9 10 Figure 15. Output Current versus Input Voltage 100 0.1 5 Vin, INPUT VOLTAGE (VOLTS) Figure 14. Output Capacitance 10 25C 10 0.001 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) Vin , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) I C , COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25C 0.8 100 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 16. Input Voltage versus Output Current http://onsemi.com 739 MMUN2111LT1 Series 1 180 IC/IB=10 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS MMUN2114LT1 TA=-25C 25C 0.1 75C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) TA=75C VCE = 10 V 160 25C 140 -25C 120 100 80 60 40 20 0 80 1 2 4 6 Figure 17. VCE(sat) versus IC TA=75C f = 1 MHz lE = 0 V TA = 25C 3.5 3 IC, COLLECTOR CURRENT (mA) Cob , CAPACITANCE (pF) 90 100 100 4 2.5 2 1.5 1 0.5 0 2 4 6 8 10 15 20 25 30 35 VR, REVERSE BIAS VOLTAGE (VOLTS) 40 45 25C -25C 10 VO = 5 V 1 50 Figure 19. Output Capacitance 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 20. Output Current versus Input Voltage +12 V 10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) 80 Figure 18. DC Current Gain 4.5 0 8 10 15 20 40 50 60 70 IC, COLLECTOR CURRENT (mA) TA=-25C 25C 75C Typical Application for PNP BRTs 1 LOAD 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 21. Input Voltage versus Output Current Figure 22. Inexpensive, Unregulated Current Source http://onsemi.com 740 MMUN2211LT1 Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications. * Simplifies Circuit Design * Reduces Board Space and Component Count * The SOT-23 package can be soldered using wave or reflow. The * modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. Available in 8 mm embossed tape and reel. Use the Device Number to order the 7 inch/3000 unit reel. Replace "T1" with "T3" in the Device Number to order the13 inch/10,000 unit reel. MAXIMUM RATINGS (TA = 25C unless otherwise noted) Rating http://onsemi.com PIN 3 COLLECTOR (OUTPUT) R1 PIN 1 BASE (INPUT) R2 PIN 2 EMITTER (GROUND) MARKING DIAGRAM 3 3 1 A8x 2 SOT-23 CASE 318 STYLE 6 1 2 A8x = Device Code x = (See Table) Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc Collector Current IC 100 mAdc Device Package Shipping Total Power Dissipation @ TA = 25C (Note 1.) Derate above 25C PD *200 1.6 mW mW/C MMUN2211LT1 SOT-23 3000/Tape & Reel MMUN2212LT1 SOT-23 3000/Tape & Reel DEVICE MARKING AND RESISTOR VALUES ORDERING INFORMATION Marking R1(K) R2(K) MMUN2213LT1 SOT-23 3000/Tape & Reel MMUN2211LT1 A8A 10 10 MMUN2214LT1 SOT-23 3000/Tape & Reel MMUN2212LT1 A8B 22 22 MMUN2215LT1 SOT-23 3000/Tape & Reel MMUN2213LT1 A8C 47 47 MMUN2216LT1 SOT-23 3000/Tape & Reel MMUN2214LT1 A8D 10 47 MMUN2230LT1 SOT-23 3000/Tape & Reel MMUN2215LT1 A8E 10 SOT-23 3000/Tape & Reel A8F 4.7 MMUN2231LT1 MMUN2216LT1 MMUN2230LT1 A8G 1.0 1.0 MMUN2232LT1 SOT-23 3000/Tape & Reel MMUN2231LT1 A8H 2.2 2.2 MMUN2233LT1 SOT-23 3000/Tape & Reel MMUN2232LT1 A8J 4.7 4.7 MMUN2234LT1 SOT-23 3000/Tape & Reel MMUN2233LT1 A8K 4.7 47 MMUN2235LT1 SOT-23 3000/Tape & Reel MMUN2238LT1 SOT-23 3000/Tape & Reel MMUN2241LT1 SOT-23 3000/Tape & Reel Device MMUN2234LT1 A8L 22 47 MMUN2235LT1 A8M 2.2 47 MMUN2238LT1 A8R 2.2 MMUN2241LT1 A8U 100 1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. Semiconductor Components Industries, LLC, 2001 January, 2001 - Rev. 2 741 Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MMUN2211LT1/D MMUN2211LT1 Series THERMAL CHARACTERISTICS Rating Thermal Resistance - Junction-to-Ambient (surface mounted) Operating and Storage Temperature Range Symbol Value Unit RJA 625 C/W TJ, Tstg -65 to +150 C TL 260 10 C Sec Maximum Temperature for Soldering Purposes, Time in Solder Bath ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO - - 100 nAdc Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO - - 500 nAdc IEBO - - - - - - - - - - - - - - - - - - - - - - - - - - - - 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 4.0 0.1 mAdc Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) V(BR)CBO 50 - - Vdc Collector-Emitter Breakdown Voltage (Note 2.), (IC = 2.0 mA, IB = 0) V(BR)CEO 50 - - Vdc hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 160 160 60 100 140 140 350 350 5.0 15 30 200 150 140 350 350 - - - - - - - - - - - - - - VCE(sat) - - 0.25 Characteristic OFF CHARACTERISTICS Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) MMUN2211LT1 MMUN2212LT1 MMUN2213LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 MMUN2235LT1 MMUN2238LT1 MMUN2241LT1 ON CHARACTERISTICS (Note 2.) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MMUN2211LT1 MMUN2212LT1 MMUN2213LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 MMUN2235LT1 MMUN2238LT1 MMUN2241LT1 Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 5 mA) MMUN2230LT1/MMUN2231LT1 (IC = 10 mA, IB = 1 mA) MMUN2215LT1/MMUN2216LT1 MMUN2232LT1/MMUN2233LT1/MMUN2234LT1/ MMUN2235LT1/MMUN2238LT1 2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%. http://onsemi.com 742 Vdc MMUN2211LT1 Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit - - - - - - - - - - - - - - - - - - - - - - - - - - - - 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 VOH 4.9 - - Vdc R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 1.54 70 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 2.2 100 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 2.88 130 k R1/R2 0.8 0.17 - - 0.8 0.055 0.38 0.038 1.0 0.21 - - 1.0 0.1 0.47 0.047 1.2 0.25 - - 1.2 0.185 0.56 0.056 ON CHARACTERISTICS (Note 3.) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k ) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k ) (VCC = 5.0 V, VB = 5.0 V, RL = 1.0 k ) VOL MMUN2211LT1 MMUN2212LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 MMUN2235LT1 MMUN2238LT1 MMUN2213LT1 MMUN2241LT1 Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k ) MMUN2230LT1 (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k ) MMUN2215LT1 (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k ) MMUN2216LT1 MMUN2233LT1 MMUN2238LT1 Input Resistor MMUN2211LT1 MMUN2212LT1 MMUN2213LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 MMUN2235LT1 MMUN2238LT1 MMUN2241LT1 Resistor Ratio MMUN2211LT1/MMUN2212LT1/MMUN2213LT1 MMUN2214LT1 MMUN2215LT1/MMUN2216LT1/MMUN2238LT1 MMUN2241LT1 MMUN2230LT1/MMUN2231LT1/MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 MMUN2235LT1 3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%. http://onsemi.com 743 Vdc MMUN2211LT1 Series 200 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 250 1 IC/IB = 10 TA = -25C 25C 75C 0.1 150 100 0.01 RJA= 625C/W 50 0 -50 0 50 100 150 0.001 0 40 60 IC, COLLECTOR CURRENT (mA) Figure 1. Derating Curve Figure 2. VCE(sat) vs. IC VCE = 10 V TA = 75C 25C -25C 100 10 1 10 IC, COLLECTOR CURRENT (mA) 100 3 2 1 0 100 f = 1 MHz lE = 0 A TA = 25C 0 VO = 0.2 V Vin, INPUT VOLTAGE (VOLTS) 1 0.1 0.01 VO = 5 V 1 2 3 30 50 40 10 TA = -25C 0 20 Figure 4. Output Capcitance 25C 10 10 VR, REVERSE BIAS VOLTAGE (VOLTS) 75C 0.001 80 4 1000 Figure 3. DC Current Gain IC, COLLECTOR CURRENT (mA) 20 TA, AMBIENT TEMPERATURE (5C) Cob, CAPACITANCE (pF) hFE, DC CURRENT GAIN (NORMALIZED) PD, POWER DISSIPATION (MILLIWATTS) TYPICAL ELECTRICAL CHARACTERISTICS MMUN2211LT1 4 5 6 7 8 9 10 TA = -25C 25C 75C 1 0.1 0 Vin, INPUT VOLTAGE (VOLTS) Figure 5. Output Current vs. Input Voltage 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 6. Input Voltage vs. Output Current http://onsemi.com 744 50 MMUN2211LT1 Series - 1000 1 TA = -25C IC/IB = 10 25C 75C 0.1 0.01 0.001 0 20 60 40 IC, COLLECTOR CURRENT (mA) 80 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS MMUN2212LT1 VCE = 10 V TA = 75C 10 1 10 IC, COLLECTOR CURRENT (mA) Figure 7. VCE(sat) vs. IC IC, COLLECTOR CURRENT (mA) 100 f = 1 MHz lE = 0 A TA = 25C 2 1 75C 25C TA = -25C 10 1 0.1 0.01 VO = 5 V 0 0 10 20 30 50 40 0.001 2 0 4 6 8 VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) Figure 9. Output Capacitance Figure 10. Output Current vs. Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 Figure 8. DC Current Gain 4 3 -25C 25C 100 VO = 0.2 V TA = -25C 10 75C 25C 1 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 11. Input Voltage vs. Output Current http://onsemi.com 745 50 10 MMUN2211LT1 Series 10 IC/IB = 10 TA = -25C 75C 25C 1 0.1 0.01 0 20 40 60 80 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS MMUN2213LT1 TA = 75C 25C -25C 100 10 1 10 100 IC, COLLECTOR CURRENT (mA) Figure 12. VCE(sat) vs. IC Figure 13. DC Current Gain 100 0.8 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 A TA = 25C 0.6 0.4 0.2 10 20 30 50 40 75C 25C 10 TA = -25C 1 0.1 0.01 VO = 5 V 0.001 0 2 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 14. Output Capacitance 4 6 8 Vin, INPUT VOLTAGE (VOLTS) Figure 15. Output Current vs. Input Voltage 100 VO = 0.2 V Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) VCE = 10 V IC, COLLECTOR CURRENT (mA) 1 0 0 1000 TA = -25C 25C 75C 10 1 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 16. Input Voltage vs. Output Current http://onsemi.com 746 50 10 MMUN2211LT1 Series 1 IC/IB = 10 TA = -25C 25C 0.1 75C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS MMUN2214LT1 300 VCE = 10 TA = 75C 250 25C 200 -25C 150 100 50 0 1 2 6 8 10 15 20 40 50 60 70 80 90 100 IC, COLLECTOR CURRENT (mA) 4 Figure 17. VCE(sat) vs. IC Figure 18. DC Current Gain 100 f = 1 MHz lE = 0 A TA = 25C 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 40 45 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 75C 25C TA = -25C 10 VO = 5 V 1 0 2 4 6 8 Vin, INPUT VOLTAGE (VOLTS) Figure 20. Output Current vs. Input Voltage Figure 19. Output Capacitance 10 TA = -25C VO = 0.2 V Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) IC, COLLECTOR CURRENT (mA) 4 25C 75C 1 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 21. Input Voltage vs. Output Current http://onsemi.com 747 50 10 MMUN2211LT1 Series TYPICAL ELECTRICAL CHARACTERISTICS MMUN2232LT1 1000 VCE = 10 V IC/IB =10 hFE, DC CURRENT GAIN VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 TA = 75C 0.1 25C -25C 0.01 TA = 75C 100 10 1 0.001 4 8 12 16 20 24 0 28 25 IC, COLLECTOR CURRENT (mA) 50 75 100 125 IC, COLLECTOR CURRENT (mA) Figure 22. VCE(sat) vs. IC Figure 23. DC Current Gain 6 IC, COLLECTOR CURRENT (mA) 100 f = 1 MHz IE = 0 A TA = 25C 5 4 3 2 1 0 VO = 5 V 75C 25C 10 1 TA = -25C 0.1 0.01 0 10 20 30 40 50 60 0 2 4 6 VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) Figure 24. Output Capacitance Figure 25. Output Current vs. Input Voltage 10 VO = 0.2 V Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 25C -25C TA = -25C 75C 1 0.1 0 25C 10 20 IC, COLLECTOR CURRENT (mA) Figure 26. Output Voltage vs. Input Current http://onsemi.com 748 30 8 MMUN2211LT1 Series TYPICAL ELECTRICAL CHARACTERISTICS MMUN2233LT1 1000 IC/IB = 10 0.1 hFE, DC CURRENT GAIN VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 25C 100 75C 25C TA = -25C 0.01 TA = -25C 10 VCE = 10 V 1 0.001 2 7 12 17 22 27 1 32 100 10 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 27. VCE(sat) vs. IC Figure 28. DC Current Gain 4 IC, COLLECTOR CURRENT (mA) 100 f = 1 MHz IE = 0 A TA = 25C 3.5 3 2.5 2 1.5 1 0.5 0 75C TA = -25C 10 1 0.1 25C VO = 5 V 0.01 0 10 20 30 40 50 60 0 2 4 6 VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) Figure 29. Output Capacitance Figure 30. Output Current vs. Input Voltage 10 VO = 0.2 V Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 75C TA = -25C 25C 75C 1 0.1 0 12 18 6 24 IC, COLLECTOR CURRENT (mA) Figure 31. Input Voltage vs. Output Current http://onsemi.com 749 30 8 MMUN2211LT1 Series TYPICAL APPLICATIONS FOR NPN BRTs +12 V ISOLATED LOAD FROM P OR OTHER LOGIC Figure 32. Level Shifter: Connects 12 or 24 Volt Circuits to Logic +12 V VCC OUT IN LOAD Figure 33. Open Collector Inverter: Inverts the Input Signal Figure 34. Inexpensive, Unregulated Current Source http://onsemi.com 750 MMVL105GT1 Preferred Device Silicon Tuning Diode This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid-state reliability in replacement of mechanical tuning methods. * Controlled and Uniform Tuning Ratio * Device Marking: 4E http://onsemi.com 30 VOLT VOLTAGE VARIABLE CAPACITANCE DIODE MAXIMUM RATINGS Symbol Rating Value Unit VR Continuous Reverse Voltage 30 Vdc IF Peak Forward Current 200 mAdc 1 THERMAL CHARACTERISTICS Symbol PD RJA TJ, Tstg Characteristic Max Unit 2 PLASTIC SOD-323 CASE 477 Total Device Dissipation FR-5 Board,* TA = 25C Derate above 25C 200 mW 1.57 mW/C Thermal Resistance Junction to Ambient 635 C/W Junction and Storage Temperature 150 C *FR-4 Minimum Pad 1 CATHODE 2 ANODE ORDERING INFORMATION Device Package Shipping MMVL105GT1 SOD-323 3000 / Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 January, 2000 - Rev. 1 751 Publication Order Number: MMVL105GT1/D MMVL105GT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Reverse Breakdown Voltage (IR = 10 Adc) Min Typ Max Unit V(BR)R 30 -- Vdc IR -- 50 nAdc Reverse Voltage Leakage Current (VR = 28 Vdc) CT VR = 25 Vdc, f = 1.0 MHz pF Device Type MMVL105GT1 Q VR = 3.0 Vdc f = 50 MHz CR C3/C25 f = 1.0 MHz Min Max Typ Min Max 1.5 2.8 250 4.0 6.5 TYPICAL CHARACTERISTICS 20 1000 Q, FIGURE OF MERIT 16 14 12 10 8.0 6.0 f = 1.0 MHz TA = 25C 4.0 VR = 3 Vdc TA = 25C 100 2.0 0 0.3 0.5 1.0 2.0 3.0 10 5.0 10 20 30 10 100 VR, REVERSE VOLTAGE (VOLTS) f, FREQUENCY (MHz) Figure 1. Diode Capacitance Figure 2. Figure of Merit CT , DIODE CAPACITANCE (NORMALIZED) CT , DIODE CAPACITANCE (pF) 18 1.04 1.03 VR = 3.0 Vdc f = 1.0 MHz 1.02 1.01 1.00 0.99 0.98 0.97 0.96 -75 -50 -25 0 +25 +50 +75 TA, AMBIENT TEMPERATURE (C) Figure 3. Diode Capacitance http://onsemi.com 752 +100 +125 1000 MMVL109T1 Preferred Device Silicon Epicap Diodes Designed for general frequency control and tuning applications; providing solid-state reliability in replacement of mechnaical tuning methods. * High Q with Guaranteed Minimum Values at VHF Frequencies * Controlled and Uniform Tuning Ratio * Surface Mount Package * Device Marking: 4A http://onsemi.com 26-32 pF VOLTAGE VARIABLE CAPACITANCE DIODES MAXIMUM RATINGS Symbol Rating Value Unit VR Continuous Reverse Voltage 30 Vdc IF Peak Forward Current 200 mAdc Max Unit 1 2 THERMAL CHARACTERISTICS Symbol PD RJA TJ, Tstg Characteristic Total Device Dissipation FR-5 Board,* TA = 25C Derate above 25C 200 mW 1.57 mW/C Thermal Resistance Junction to Ambient 635 C/W -55 to +150 C Junction and Storage Temperature Range PLASTIC SOD-323 CASE 477 *FR-5 Minimum Pad 1 CATHODE 2 ANODE ORDERING INFORMATION Device MMVL109T1 Package Shipping SOD-323 3000 / Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 January, 2000 - Rev. 0 753 Publication Order Number: MMVL109T1/D MMVL109T1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic Reverse Breakdown Voltage (IR = 10 Adc) Symbol Min Typ Max Unit V(BR)R 30 -- -- Vdc IR -- -- 0.1 Adc TCC -- 300 -- ppm/C Reverse Voltage Leakage Current (VR = 25 Vdc) Diode Capacitance Temperature Coefficient (VR = 3.0 Vdc, f = 1.0 MHz) Ct, Diode Capacitance VR = 3.0 Vdc, f = 1.0 MHz pF Device MMVL109T1 Q, Figure of Merit VR = 3.0 Vdc f = 50 MHz CR, Capacitance Ratio C3/C25 f = 1.0 MHz (Note 1) Min Nom Max Min Min Max 26 29 32 200 5.0 6.5 1. CR is the ratio of Ct measured at 3 Vdc divided by Ct measured at 25 Vdc. 40 1000 36 Q, FIGURE OF MERIT CT , CAPACITANCE - pF 32 28 24 20 16 12 f = 1.0 MHz TA = 25C 8 VR = 3 Vdc TA = 25C 100 4 0 1 3 10 30 1000 Figure 1. DIODE CAPACITANCE Figure 2. FIGURE OF MERIT C t , DIODE CAPACITANCE (NORMALIZED) I R , REVERSE CURRENT (nA) 100 f, FREQUENCY (MHz) 20 10 6.0 VR = 20 Vdc 2.0 1.0 0.6 0.2 0.1 0.06 0.02 0.01 0.006 -40 10 VR, REVERSE VOLTAGE (VOLTS) 100 60 0.002 0.001 -60 10 100 -20 0 +20 +40 +60 +80 +100 +120 +140 1.04 1.03 1.02 VR = 3.0 Vdc f = 1.0 MHz Ct Cc + Cj 1.01 1.00 0.99 0.98 0.97 0.96 -75 -50 -25 0 +25 +50 +75 TA, AMBIENT TEMPERATURE TA, AMBIENT TEMPERATURE Figure 3. LEAKAGE CURRENT Figure 4. DIODE CAPACITANCE NOTES ON TESTING AND SPECIFICATIONS 1. CR is the ratio of Ct measured at 3.0 Vdc divided by Ct measured at 25 Vdc. http://onsemi.com 754 +100 +125 MMVL2101T1 Preferred Device Silicon Tuning Diode These devices are designed in the popular Plastic Surface Mount Package for high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications.They provide solid-state reliability in replacement of mechanical tuning methods. * High Q * Controlled and Uniform Tuning Ratio * Standard Capacitance Tolerance - 10% * Complete Typical Design Curves * Device Marking: 4G http://onsemi.com 30 VOLTS VOLTAGE VARIABLE CAPACITANCE DIODE 1 MAXIMUM RATINGS Symbol Rating Value Unit VR Continuous Reverse Voltage 30 Vdc IF Peak Forward Current 200 mAdc Max Unit 2 PLASTIC SOD-323 CASE 477 THERMAL CHARACTERISTICS Symbol PD RJA TJ, Tstg Characteristic Total Device Dissipation FR-5 Board,* TA = 25C Derate above 25C 200 mW 1.57 mW/C Thermal Resistance Junction to Ambient 635 C/W Junction and Storage Temperature 150 C 1 CATHODE *FR-4 Minimum Pad 2 ANODE ORDERING INFORMATION Device Package Shipping MMVL2101T1 SOD-323 3000 / Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 January, 2000 - Rev. 1 755 Publication Order Number: MMVL2101T1/D MMVL2101T1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)R 30 -- -- Vdc IR -- -- 0.1 Adc TCC -- 280 -- ppm/C Reverse Breakdown Voltage (IR = 10 Adc) Reverse Voltage Leakage Current (VR = 25 Vdc, TA = 25C) Diode Capacitance Temperature Coefficient (VR = 4.0 Vdc, f = 1.0 MHz) CT, Diode Capacitance VR = 4.0 Vdc, f = 1.0 MHz pF Device MMVL2101T1 Q, Figure of Merit VR = 4.0 Vdc, f = 50 MHz TR, Tuning Ratio C2/C30 f = 1.0 MHz Min Nom Max Typ Min Typ Max 6.1 6.8 7.5 450 2.5 2.7 3.2 PARAMETER TEST METHODS 1. CT, DIODE CAPACITANCE 4. TCC, DIODE CAPACITANCE TEMPERATURE COEFFICIENT (CT = CC + CJ). CT is measured at 1.0 MHz using a capacitance bridge (Boonton Electronics Model 75A or equivalent). TCC is guaranteed by comparing CT at VR = 4.0 Vdc, f = 1.0 MHz, TA = -65C with CT at VR = 4.0 Vdc, f = 1.0 MHz, TA = +85C in the following equation, which defines TCC: 2. TR, TUNING RATIO TR is the ratio of CT measured at 2.0 Vdc divided by CT measured at 30 Vdc. TCC 3. Q, FIGURE OF MERIT - CT(-65C) 6 CT( 85C) * C 10(25C) 85 65 T Accuracy limited by measurement of CT to 0.1 pF. Q is calculated by taking the G and C readings of an admittance bridge at the specified frequency and substituting in the following equations: Q 2fC G (Boonton Electronics Model 33AS8 or equivalent). Use Lead Length 1/16". http://onsemi.com 756 MMVL2101T1 TYPICAL DEVICE CHARACTERISTICS 1000 C T , DIODE CAPACITANCE (pF) 500 TA = 25C f = 1.0 MHz 200 100 50 20 10 5.0 2.0 1.0 0.1 0.2 0.3 0.5 1.0 5.0 3.0 2.0 20 10 30 VR, REVERSE VOLTAGE (VOLTS) Figure 1. Diode Capacitance versus Reverse Voltage 100 50 VR = 2.0 Vdc 1.030 I R , REVERSE CURRENT (nA) NORMALIZED DIODE CAPACITANCE 1.040 1.020 VR = 4.0 Vdc 1.010 1.000 VR = 30 Vdc 0.990 NORMALIZED TO CT at TA = 25C VR = (CURVE) 0.980 0.970 0.960 -75 -50 -25 0 +25 +50 +75 TJ, JUNCTION TEMPERATURE (C) TA = 125C 20 10 5.0 2.0 1.0 0.50 TA = 75C 0.20 0.10 TA = 25C 0.05 +100 0.02 0.01 +125 1000 1000 Q, FIGURE OF MERIT Q, FIGURE OF MERIT 5000 3000 2000 500 300 200 100 TA = 25C f = 50 MHz 2.0 10 3.0 5.0 7.0 VR, REVERSE VOLTAGE (VOLTS) 15 20 25 30 Figure 3. Reverse Current versus Reverse Bias Voltage 5000 3000 2000 10 1.0 10 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Normalized Diode Capacitance versus Junction Temperature 50 30 20 5.0 0 20 30 500 300 200 100 50 30 20 10 10 Figure 4. Figure of Merit versus Reverse Voltage TA = 25C VR = 4.0 Vdc 20 100 30 50 70 f, FREQUENCY (MHz) 200 Figure 5. Figure of Merit versus Frequency http://onsemi.com 757 250 MMVL2105T1 Preferred Device Silicon Tuning Diode These devices are designed in the popular Plastic Surface Mount Package for high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications.They provide solid-state reliability in replacement of mechanical tuning methods. * High Q * Controlled and Uniform Tuning Ratio * Standard Capacitance Tolerance - 10% * Complete Typical Design Curves * Device Marking: 4U http://onsemi.com 30 VOLTS VOLTAGE VARIABLE CAPACITANCE DIODE 1 MAXIMUM RATINGS Symbol Rating Value Unit VR Continuous Reverse Voltage 30 Vdc IF Peak Forward Current 200 mAdc Max Unit 2 PLASTIC SOD-323 CASE 477 THERMAL CHARACTERISTICS Symbol PD RJA TJ, Tstg Characteristic Total Device Dissipation FR-5 Board,* TA = 25C Derate above 25C 200 mW 1.57 mW/C Thermal Resistance Junction to Ambient 635 C/W Junction and Storage Temperature 150 C 1 CATHODE *FR-5 Minimum Pad 2 ANODE ORDERING INFORMATION Device Package Shipping MMVL2105T1 SOD-323 3000 / Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 February, 2000 - Rev. 0 758 Publication Order Number: MMVL2105T1/D MMVL2105T1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)R 30 -- -- Vdc IR -- -- 0.1 Adc TCC -- 280 -- ppm/C Reverse Breakdown Voltage (IR = 10 Adc) Reverse Voltage Leakage Current (VR = 25 Vdc, TA = 25C) Diode Capacitance Temperature Coefficient (VR = 4.0 Vdc, f = 1.0 MHz) CT, Diode Capacitance VR = 4.0 Vdc, f = 1.0 MHz pF Device MMVL2105T1 Q, Figure of Merit VR = 4.0 Vdc, f = 50 MHz TR, Tuning Ratio C2/C30 f = 1.0 MHz Min Nom Max Typ Min Typ Max 13.5 15 16.5 400 2.5 2.9 3.2 PARAMETER TEST METHODS 1. CT, DIODE CAPACITANCE 4. TCC, DIODE CAPACITANCE TEMPERATURE COEFFICIENT (CT = CC + CJ). CT is measured at 1.0 MHz using a capacitance bridge (Boonton Electronics Model 75A or equivalent). TCC is guaranteed by comparing CT at VR = 4.0 Vdc, f = 1.0 MHz, TA = -65C with CT at VR = 4.0 Vdc, f = 1.0 MHz, TA = +85C in the following equation, which defines TCC: 2. TR, TUNING RATIO TR is the ratio of CT measured at 2.0 Vdc divided by CT measured at 30 Vdc. TCC 3. Q, FIGURE OF MERIT - CT(-65C) 6 CT( 85C) * C 10(25C) 85 65 T Accuracy limited by measurement of CT to 0.1 pF. Q is calculated by taking the G and C readings of an admittance bridge at the specified frequency and substituting in the following equations: Q 2fC G (Boonton Electronics Model 33AS8 or equivalent). Use Lead Length 1/16". http://onsemi.com 759 MMVL2105T1 TYPICAL DEVICE CHARACTERISTICS 1000 C T , DIODE CAPACITANCE (pF) 500 TA = 25C f = 1.0 MHz 200 100 50 20 10 5.0 2.0 1.0 0.1 0.2 0.3 0.5 1.0 5.0 3.0 2.0 20 10 30 VR, REVERSE VOLTAGE (VOLTS) Figure 1. Diode Capacitance versus Reverse Voltage 100 50 VR = 2.0 Vdc 1.030 I R , REVERSE CURRENT (nA) NORMALIZED DIODE CAPACITANCE 1.040 1.020 VR = 4.0 Vdc 1.010 1.000 VR = 30 Vdc 0.990 NORMALIZED TO CT at TA = 25C VR = (CURVE) 0.980 0.970 0.960 -75 -50 -25 0 +25 +50 +75 TJ, JUNCTION TEMPERATURE (C) TA = 125C 20 10 5.0 2.0 1.0 0.50 TA = 75C 0.20 0.10 TA = 25C 0.05 +100 0.02 0.01 +125 15 20 25 30 Figure 3. Reverse Current versus Reverse Bias Voltage 1000 Q, FIGURE OF MERIT 10,000 1000 100 TA = 25C f = 50 MHz 100 10 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Normalized Diode Capacitance versus Junction Temperature Q, FIGURE OF MERIT 5.0 0 0.1 10 1.0 VR, REVERSE VOLTAGE (VOLTS) 100 10 TA = 25C VR = 4.0 Vdc 10 Figure 4. Figure of Merit versus Reverse Voltage 100 f, FREQUENCY (MHz) Figure 5. Figure of Merit versus Frequency http://onsemi.com 760 1000 MMVL3102T1 Preferred Device Silicon Tuning Diode This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid-state reliability in replacement of mechanical tuning methods. * High Q with Guaranteed Minimum Values at VHF Frequencies * Controlled and Uniform Tuning Ratio * Device Marking: 4C http://onsemi.com 22 pF (Nominal) 30 VOLTS VOLTAGE VARIABLE CAPACITANCE DIODE MAXIMUM RATINGS Symbol Rating Value Unit VR Continuous Reverse Voltage 30 Vdc IF Peak Forward Current 200 mAdc 1 2 THERMAL CHARACTERISTICS Symbol PD RJA TJ, Tstg Characteristic Max Unit Total Device Dissipation FR-5 Board,* TA = 25C Derate above 25C 200 mW 1.57 mW/C Thermal Resistance Junction to Ambient 635 C/W Junction and Storage Temperature 150 C PLASTIC SOD-323 CASE 477 *FR-4 Minimum Pad 1 CATHODE 2 ANODE ORDERING INFORMATION Device Package Shipping MMVL3102T1 SOD-323 3000 / Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 January, 2000 - Rev. 1 761 Publication Order Number: MMVL3102T1/D MMVL3102T1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 Adc) Symbol Min Typ Max Unit V(BR)R 30 -- -- Vdc IR -- -- 0.1 Adc TCC -- 300 -- ppm/C Reverse Voltage Leakage Current (VR = 25 Vdc, TA = 25C) Diode Capacitance Temperature Coefficient (VR = 4.0 Vdc, f = 1.0 MHz) Ct, Diode Capacitance VR = 3.0 Vdc, f = 1.0 MHz pF Device MMVL3102T1 Q, Figure of Merit VR = 3.0 Vdc f = 50 MHz CR, Capacitance Ratio C3/C25 f = 1.0 MHz Min Nom Max Min Min Typ 20 22 25 200 4.5 4.8 TYPICAL CHARACTERISTICS 20 40 Q, FIGURE OF MERIT (x 1000) CT , DIODE CAPACITANCE (pF) 36 32 28 24 20 16 12 f = 1.0 MHz TA = 25C 8.0 4.0 0 0.3 0.5 1.0 2.0 3.0 5.0 10 1.0 0.5 0 3.0 6.0 9.0 12 15 18 21 24 VR, REVERSE VOLTAGE (VOLTS) Figure 1. Diode Capacitance Figure 2. Figure of Merit C T, DIODE CAPACITANCE (NORMALIZED) I R , REVERSE CURRENT (nA) 3.0 2.0 VR, REVERSE VOLTAGE (VOLTS) 100 10 VR = 20 Vdc 1.0 0.1 0.01 0.001 -60 5.0 0.3 0.2 20 30 TA = 25C f = 50 MHz 10 -20 0 +20 +60 +100 +140 30 1.04 1.03 VR = 3.0 Vdc f = 1.0 MHz 1.02 1.01 1.00 0.99 0.98 0.97 0.96 -75 -50 -25 0 +25 +50 +75 TA, AMBIENT TEMPERATURE (C) TA, AMBIENT TEMPERATURE (C) Figure 3. Leakage Current Figure 4. Diode Capacitance NOTES ON TESTING AND SPECIFICATIONS 1. CR is the ratio of CT measured at 3.0 Vdc divided by CT measured at 25 Vdc. http://onsemi.com 762 27 +100 +125 MMVL3401T1 Preferred Device Silicon Pin Diode This device is designed primarily for VHF band switching applications but is also suitable for use in general-purpose switching circuits. Supplied in a Surface Mount package. * Rugged PIN Structure Coupled with Wirebond Construction for Optimum Reliability * Low Capacitance 0.7 pF Typ at VR = 20 Vdc * Very Low Series Resistance at 100 MHz 0.34 Ohms (Typ) @ IF = 10 mAdc * Device Marking: 4D http://onsemi.com SILICON PIN SWITCHING DIODE MAXIMUM RATINGS Symbol 1 Rating Value Unit 2 VR Continuous Reverse Voltage 20 Vdc IF Peak Forward Current 20 mAdc Max Unit PLASTIC SOD-323 CASE 477 THERMAL CHARACTERISTICS Symbol PD RJA TJ, Tstg Characteristic Total Device Dissipation FR-5 Board,* TA = 25C Derate above 25C 200 mW 1.57 mW/C Thermal Resistance Junction to Ambient 635 C/W Junction and Storage Temperature 150 C 1 CATHODE *FR-4 Minimum Pad 2 ANODE ORDERING INFORMATION Device Package Shipping MMVL3401T1 SOD-323 3000 / Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 January, 2000 - Rev. 1 763 Publication Order Number: MMVL3401T1/D MMVL3401T1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)R 35 -- -- Vdc Diode Capacitance (VR = 20 Vdc) CT -- -- 1.0 pF Series Resistance (Figure 5) (IF = 10 mAdc, f = 100 MHz) RS -- -- 0.7 Reverse Leakage Current (VR = 25 Vdc) IR -- -- 0.1 Adc Reverse Breakdown Voltage (IR = 10 Adc) TYPICAL CHARACTERISTICS 50 1.4 1.2 I F , FORWARD CURRENT (mA) R S , SERIES RESISTANCE (OHMS) 1.6 TA = 25C 1.0 0.8 0.6 0.4 40 30 TA = 25C 20 10 0.2 0 0 2.0 4.0 6.0 8.0 10 12 14 0 0.5 16 0.7 0.8 0.9 1.0 +100 +140 IF, FORWARD CURRENT (mA) VF, FORWARD VOLTAGE (VOLTS) Figure 1. Series Resistance Figure 2. Forward Voltage 100 20 40 10 7.0 5.0 I R , REVERSE CURRENT ( A) C T , DIODE CAPACITANCE (pF) 0.6 TA = 25C 2.0 1.0 0.7 0.5 10 4.0 VR = 25 Vdc 1.0 0.4 0.1 0.04 0.01 0.004 0.2 +3.0 0 -3.0 -6.0 -9.0 -12 -15 -18 -21 -24 -27 0.001 -60 VR, REVERSE VOLTAGE (VOLTS) -20 0 +20 +60 TA, AMBIENT TEMPERATURE (C) Figure 3. Diode Capacitance Figure 4. Leakage Current http://onsemi.com 764 MMVL3700T1 High Voltage Silicon Pin Diode These devices are designed primarily for VHF band switching applications but are also suitable for use in general-purpose switching circuits. They are supplied in a cost-effective plastic surface mount package for economical, high-volume consumer and industrial requirements. * Long Reverse Recovery Time trr = 300 ns (Typ) * Rugged PIN Structure Coupled with Wirebond Construction for Optimum Reliability * Low Series Resistance @ 100 MHz RS = 0.7 Ohms (Typ) @ IF = 10 mAdc * Reverse Breakdown Voltage = 200 V (Min) * Device Marking: 4R http://onsemi.com SILICON PIN SWITCHING DIODE 1 2 PLASTIC SOD-323 CASE 477 MAXIMUM RATINGS Symbol Value Unit VR Continuous Reverse Voltage Rating 200 Vdc IF Peak Forward Current 20 mAdc Max Unit THERMAL CHARACTERISTICS Symbol PD RJA TJ, Tstg Characteristic Total Device Dissipation FR-5 Board,* TA = 25C Derate above 25C 200 mW 1.57 mW/C Thermal Resistance Junction to Ambient 635 C/W Junction and Storage Temperature 150 C 1 CATHODE 2 ANODE ORDERING INFORMATION *FR-4 Minimum Pad Semiconductor Components Industries, LLC, 2001 January, 2000 - Rev. 1 765 Device Package Shipping MMVL3700T1 SOD-323 3000 / Tape & Reel Publication Order Number: MMVL3700T1/D MMVL3700T1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage (IR = 10 Adc) V(BR)R 200 -- -- Vdc Diode Capacitance (VR = 20 Vdc, f = 1.0 MHz) CT -- -- 1.0 pF Series Resistance (IF = 10 mAdc) RS -- 0.7 1.0 Reverse Leakage Current (VR = 150 Vdc) IR -- -- 0.1 Adc Reverse Recovery Time (IF = IR = 10 mAdc) trr -- 300 -- ns TYPICAL CHARACTERISTICS 800 2.8 I F , FORWARD CURRENT (mA) R S , SERIES RESISTANCE (OHMS) 3.2 TA = 25C 2.4 2.0 1.6 1.2 0.8 0 2.0 6.0 4.0 8.0 10 12 14 500 400 TA = 25C 300 200 0 16 0.8 0.9 1.0 VF, FORWARD VOLTAGE (VOLTS) Figure 1. Series Resistance Figure 2. Forward Voltage 10 8.0 6.0 100 40 4.0 TA = 25C 2.0 1.0 0.8 0.6 0.4 0.2 0.1 0.7 IF, FORWARD CURRENT (mA) I R , REVERSE CURRENT ( A) C T , DIODE CAPACITANCE (pF) 600 100 0.4 0 700 10 4.0 VR = 15 Vdc 1.0 0.4 0.1 0.04 0.01 0.004 0 -10 -20 -30 -40 0.001 -60 -50 VR, REVERSE VOLTAGE (VOLTS) -20 0 +20 +60 +100 TA, AMBIENT TEMPERATURE (C) Figure 3. Diode Capacitance Figure 4. Leakage Current http://onsemi.com 766 +140 MMVL409T1 Preferred Device Silicon Tuning Diode These devices are designed for general frequency control and tuning applications. They provide solid-state reliability in replacement of mechanical tuning methods. * High Q with Guaranteed Minimum Values at VHF Frequencies * Controlled and Uniform Tuning Ratio * Surface Mount Package * Device Marking: X5 http://onsemi.com VOLTAGE VARIABLE CAPACITANCE DIODE MAXIMUM RATINGS Symbol Rating Value Unit VR Continuous Reverse Voltage 20 Vdc IF Peak Forward Current 200 mAdc Max Unit 1 2 THERMAL CHARACTERISTICS Symbol PD RJA TJ, Tstg Characteristic Total Device Dissipation FR-5 Board,* TA = 25C Derate above 25C 200 mW 1.57 mW/C Thermal Resistance Junction to Ambient 635 C/W Junction and Storage Temperature 150 C PLASTIC SOD-323 CASE 477 *FR-4 Minimum Pad 1 CATHODE 2 ANODE ORDERING INFORMATION Device MMVL409T1 Package Shipping SOD-323 3000 / Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 January, 2000 - Rev. 1 767 Publication Order Number: MMVL409T1/D MMVL409T1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 Adc) Symbol Min Typ Max Unit V(BR)R 20 -- -- Vdc IR -- -- 0.1 Adc TCC -- 300 -- ppm/C Reverse Voltage Leakage Current (VR = 15 Vdc) Diode Capacitance Temperature Coefficient (VR = 3.0 Vdc, f = 1.0 MHz) Ct, Diode Capacitance VR = 3.0 Vdc, f = 1.0 MHz pF Device MMVL409T1 Q, Figure of Merit VR = 3.0 Vdc f = 50 MHz CR, Capacitance Ratio C3/C8 f = 1.0 MHz(1) Min Nom Max Min Min Max 26 29 32 200 1.5 1.9 1. CR is the ratio of Ct measured at 3 Vdc divided by Ct measured at 8 Vdc. TYPICAL CHARACTERISTICS 1000 32 Q, FIGURE OF MERIT C T, DIODE CAPACITANCE (pF) 40 f = 1.0 MHz TA = 25C 24 16 100 8 0 1 2 3 10 20 30 10 100 1000 Figure 1. Diode Capacitance Figure 2. Figure of Merit C t , DIODE CAPACITANCE (NORMALIZED) VR = 15 Vdc 2.0 1.0 0.6 0.2 0.1 0.06 0.02 0.01 0.006 -40 100 f, FREQUENCY (MHz) 20 10 6.0 0.002 0.001 -60 10 VR, REVERSE VOLTAGE (VOLTS) 100 60 I R , REVERSE CURRENT (nA) VR = 3 Vdc TA = 25C -20 0 +20 +40 +60 +80 +100 +120 +140 1.04 1.03 VR = 3.0 Vdc f = 1.0 MHz 1.02 1.01 1.00 0.99 0.98 0.97 0.96 -75 TA, AMBIENT TEMPERATURE (C) -50 -25 0 +25 +50 +75 TA, AMBIENT TEMPERATURE (C) Figure 3. Leakage Current Figure 4. Diode Capacitance http://onsemi.com 768 +100 +125 MMVL809T1 Silicon Tuning Diode This device is designed for 900 MHz frequency control and tuning applications. It provides solid-state reliability in replacement of mechanical tuning methods. * Controlled and Uniform Tuning Ratio * Surface Mount Package * Available in 8 mm Tape and Reel * Device Marking: 5K http://onsemi.com 4.5 - 6.1 pF VOLTAGE VARIABLE CAPACITANCE DIODE MAXIMUM RATINGS Symbol Rating Value Unit VR Continuous Reverse Voltage 20 Vdc IF Peak Forward Current 20 mAdc Max Unit 1 2 THERMAL CHARACTERISTICS Symbol PD RJA TJ, Tstg Characteristic Total Device Dissipation FR-5 Board,* TA = 25C Derate above 25C 200 mW 1.57 mW/C Thermal Resistance Junction to Ambient 635 C/W Junction and Storage Temperature 150 C PLASTIC SOD-323 CASE 477 *FR-4 Minimum Pad 1 CATHODE 2 ANODE ORDERING INFORMATION Device MMVL809T1 Semiconductor Components Industries, LLC, 2000 January, 2000 - Rev. 1 769 Package Shipping SOD-323 3000 / Tape & Reel Publication Order Number: MMVL809T1/D MMVL809T1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic - All Types Reverse Breakdown Voltage (IR = 10 Adc) Symbol Min Typ Max Unit V(BR)R 20 -- -- Vdc IR -- -- 50 nAdc Reverse Voltage Leakage Current (VR = 15 Vdc) Ct, Diode Capacitance VR = 2.0 Vdc, f = 1.0 MHz pF Device MMVL809T1 Q, Figure of Merit VR = 3.0 Vdc f = 500 MHz CR, Capacitance Ratio C2/C8 f = 1.0 MHz(1) Min Typ Max Typ Min Max 4.5 5.3 6.1 75 1.8 2.6 1. CR is the ratio of Ct measured at 2.0 Vdc divided by Ct measured at 8.0 Vdc. TYPICAL CHARACTERISTICS 10 1000 Q, FIGURE OF MERIT CT , DIODE CAPACITANCE (pF) 9 8 7 6 5 4 3 VR = 3 Vdc TA = 25C 100 2 1 0 0.5 1 2 3 4 5 8 10 10 0.1 15 Figure 1. Diode Capacitance Figure 2. Figure of Merit CT , DIODE CAPACITANCE (NORMALIZED) R S , SERIES RESISTANCE (MHz) VR = 3.0 Vdc f = 1.0 MHz 800 600 0 10 f, FREQUENCY (GHz) 1000 400 1.0 VR, REVERSE VOLTAGE (VOLTS) 0.2 0.4 0.6 0.8 1.0 1.2 1.04 1.03 VR = 3.0 Vdc f = 1.0 MHz 1.02 1.01 1.00 0.99 0.98 0.97 0.96 -75 f, FREQUENCY (GHz) -50 -25 0 +25 +50 +75 TA, AMBIENT TEMPERATURE (C) Figure 3. Series Resistance Figure 4. Diode Capacitance http://onsemi.com 770 +100 +125 ON Semiconductor JFET VHF Amplifier MPF102 N-Channel - Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDS 25 Vdc Drain-Gate Voltage VDG 25 Vdc Gate-Source Voltage VGS -25 Vdc Gate Current IG 10 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 350 2.8 mW mW/C Junction Temperature Range TJ 125 C Storage Temperature Range Tstg -65 to +150 C 1 2 CASE 29-11, STYLE 5 TO-92 (TO-226AA) 1 DRAIN 3 GATE 2 SOURCE ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic 3 Symbol Min Max Unit V(BR)GSS -25 - Vdc - - -2.0 -2.0 nAdc Adc OFF CHARACTERISTICS Gate-Source Breakdown Voltage (IG = -10 Adc, VDS = 0) Gate Reverse Current (VGS = -15 Vdc, VDS = 0) (VGS = -15 Vdc, VDS = 0, TA = 100C) IGSS Gate-Source Cutoff Voltage (VDS = 15 Vdc, ID = 2.0 nAdc) VGS(off) - -8.0 Vdc Gate-Source Voltage (VDS = 15 Vdc, ID = 0.2 mAdc) VGS -0.5 -7.5 Vdc IDSS 2.0 20 mAdc 2000 1600 7500 - ON CHARACTERISTICS Zero-Gate-Voltage Drain Current(1) (VDS = 15 Vdc, VGS = 0 Vdc) SMALL-SIGNAL CHARACTERISTICS Forward Transfer Admittance(1) (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) (VDS = 15 Vdc, VGS = 0, f = 100 MHz) yfs Input Admittance (VDS = 15 Vdc, VGS = 0, f = 100 MHz) Re(yis) - 800 mhos Output Conductance (VDS = 15 Vdc, VGS = 0, f = 100 MHz) Re(yos) - 200 mhos Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Ciss - 7.0 pF Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Crss - 3.0 pF mhos 1. Pulse Test; Pulse Width 630 ms, Duty Cycle 10%. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 771 Publication Order Number: MPF102/D MPF102 COMMON SOURCE CHARACTERISTICS 30 20 bis @ IDSS 10 7.0 5.0 3.0 gis @ IDSS 2.0 gis @ 0.25 IDSS 1.0 0.7 0.5 0.3 10 grs , REVERSE TRANSADMITTANCE (mmhos) brs , REVERSE SUSCEPTANCE (mmhos) gis, INPUT CONDUCTANCE (mmhos) bis, INPUT SUSCEPTANCE (mmhos) ADMITTANCE PARAMETERS (VDS = 15 Vdc, Tchannel = 25C) bis @ 0.25 IDSS 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 5.0 3.0 2.0 0.25 IDSS 0.3 0.2 0.1 0.07 0.05 500 700 1000 brs @ IDSS 1.0 0.7 0.5 grs @ IDSS, 0.25 IDSS 10 20 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 10 10 7.0 5.0 gfs @ IDSS gfs @ 0.25 IDSS 3.0 2.0 1.0 0.7 0.5 0.3 0.2 10 30 Figure 2. Reverse Transfer Admittance (yrs) gos, OUTPUT ADMITTANCE (mhos) bos, OUTPUT SUSCEPTANCE (mhos) gfs, FORWARD TRANSCONDUCTANCE (mmhos) |b fs|, FORWARD SUSCEPTANCE (mmhos) Figure 1. Input Admittance (yis) 20 |bfs| @ IDSS 30 50 70 100 200 300 f, FREQUENCY (MHz) bos @ IDSS and 0.25 IDSS 2.0 1.0 0.5 0.2 gos @ IDSS 0.1 0.05 |bfs| @ 0.25 IDSS 20 5.0 gos @ 0.25 IDSS 0.02 500 700 1000 0.01 10 Figure 3. Forward Transadmittance (yfs) 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 4. Output Admittance (yos) http://onsemi.com 772 MPF102 COMMON SOURCE CHARACTERISTICS S-PARAMETERS (VDS = 15 Vdc, Tchannel = 25C, Data Points in MHz) 30 20 10 0 1.0 40 350 340 400 300 0.8 60 ID = IDSS 0.6 800 310 50 10 0 350 340 330 0.4 320 700 800 700 300 60 290 70 280 80 900 0.3 ID = IDSS, 0.25 IDSS 310 900 800 0.2 300 700 600 600 500 600 80 40 500 400 0.7 70 320 20 300 200 0.9 30 200 100 50 330 ID = 0.25 IDSS 100 0.1 500 290 400 300 280 0.0 200 270 90 100 260 100 260 110 250 110 250 120 240 120 240 130 230 130 230 140 220 140 220 90 900 150 160 170 180 190 200 210 150 160 Figure 5. S11s 30 20 10 0 350 340 330 0.6 0.5 60 900 70 80 90 100 110 120 800 700 900 700 600 500 0.4 800 600 500 0.3 100 400 400 0.3 ID = 0.25 IDSS 300 200 0.4 100 0.5 300 ID = IDSS 200 170 180 190 200 210 Figure 6. S12s 40 50 270 100 130 30 20 10 0 350 340 330 100 200 I = 0.25 IDSS D 300 1.0 400 100 200 500 300 600 400 700 0.9 500 800 600 ID = IDSS 700 900 800 900 0.8 320 40 310 50 300 60 290 70 280 80 270 90 270 260 100 260 250 110 250 240 120 240 230 130 230 220 140 220 0.7 320 310 300 290 280 0.6 0.6 140 150 160 170 180 190 200 210 150 Figure 7. S21s 160 170 180 190 Figure 8. S22s http://onsemi.com 773 200 210 MPF102 COMMON GATE CHARACTERISTICS ADMITTANCE PARAMETERS (VDG = 15 Vdc, Tchannel = 25C) 10 7.0 5.0 grg , REVERSE TRANSADMITTANCE (mmhos) brg , REVERSE SUSCEPTANCE (mmhos) gig, INPUT CONDUCTANCE (mmhos) big, INPUT SUSCEPTANCE (mmhos) 20 gig @ IDSS 3.0 grg @ 0.25 IDSS 2.0 1.0 0.7 0.5 big @ IDSS 0.3 0.2 10 20 30 big @ 0.25 IDSS 50 70 100 200 300 f, FREQUENCY (MHz) 0.5 0.3 0.1 0.07 0.05 0.25 IDSS 0.03 0.02 0.01 0.007 0.005 500 700 1000 brg @ IDSS 0.2 gig @ IDSS, 0.25 IDSS 10 10 7.0 5.0 gfg @ IDSS 3.0 gfg @ 0.25 IDSS 2.0 1.0 0.7 0.5 bfg @ IDSS 0.3 brg @ 0.25 IDSS 0.2 0.1 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 10. Reverse Transfer Admittance (yrg) gog, OUTPUT ADMITTANCE (mmhos) bog, OUTPUT SUSCEPTANCE (mmhos) gfg , FORWARD TRANSCONDUCTANCE (mmhos) bfg , FORWARD SUSCEPTANCE (mmhos) Figure 9. Input Admittance (yig) 20 500 700 1000 1.0 0.7 0.5 bog @ IDSS, 0.25 IDSS 0.3 0.2 0.1 0.07 0.05 gog @ IDSS 0.03 0.02 0.01 gog @ 0.25 IDSS 10 Figure 11. Forward Transfer Admittance (yfg) 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 12. Output Admittance (yog) http://onsemi.com 774 MPF102 COMMON GATE CHARACTERISTICS S-PARAMETERS (VDS = 15 Vdc, Tchannel = 25C, Data Points in MHz) 30 20 10 0 350 340 0.7 40 100 100 200 200 0.5 300 300 60 ID = IDSS 0.4 70 400 700 400 500 310 50 300 60 290 70 280 80 600 900 270 260 100 110 250 110 120 240 120 130 230 130 220 140 170 180 190 20 10 0 350 200 100 600 ID = IDSS 700 300 290 280 0.0 270 500 600 700 800 800 260 ID = 0.25 IDSS 250 0.01 240 0.02 230 900 0.03 220 0.04 150 160 170 180 190 200 210 340 330 Figure 14. S12g 340 330 30 20 10 40 320 0 1.5 1.0 100 100 0.4 320 0.01 140 210 0.5 40 330 0.02 Figure 13. S11g 30 340 310 900 160 350 0.04 90 100 150 0 800 900 90 40 10 600 800 0.3 320 20 0.03 500 700 80 30 ID = 0.25 IDSS 0.6 50 330 350 300 200 400 320 700 600 800 0.9 ID = IDSS 500 900 310 50 300 60 290 70 280 80 270 90 270 260 100 260 110 250 110 250 120 240 120 240 130 230 130 230 140 220 140 220 50 100 0.3 60 0.2 70 80 ID = 0.25 IDSS 0.1 900 90 900 100 150 160 170 180 190 200 210 ID = IDSS, 0.25 IDSS 0.8 Figure 15. S21g 300 0.7 290 280 0.6 150 160 170 180 190 Figure 16. S22g http://onsemi.com 775 310 200 210 ON Semiconductor 1 DRAIN JFETs Switching MPF4392 MPF4393 3 GATE N-Channel - Depletion ON Semiconductors Preferred Devices 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDS 30 Vdc Drain-Gate Voltage VDG 30 Vdc Gate-Source Voltage VGS 30 Vdc Forward Gate Current IG(f) 50 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 350 2.8 mW mW/C Tchannel, Tstg -65 to +150 C Operating and Storage Channel Temperature Range 1 2 3 CASE 29-11, STYLE 5 TO-92 (TO-226AA) ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)GSS 30 - - Vdc - - - - 1.0 0.2 nAdc Adc - - - - 1.0 0.1 nAdc Adc -2.0 -0.5 - - -5.0 -3.0 25 5.0 - - 75 30 - - - - 0.4 0.4 - - - - 60 100 - - 17 12 - - OFF CHARACTERISTICS Gate-Source Breakdown Voltage (IG = 1.0 Adc, VDS = 0) Gate Reverse Current (VGS = 15 Vdc, VDS = 0) (VGS = 15 Vdc, VDS = 0, TA = 100C) IGSS Drain-Cutoff Current (VDS = 15 Vdc, VGS = 12 Vdc) (VDS = 15 Vdc, VGS = 12 Vdc, TA = 100C) ID(off) Gate Source Voltage (VDS = 15 Vdc, ID = 10 nAdc) VGS MPF4392 MPF4393 Vdc ON CHARACTERISTICS Zero-Gate-Voltage Drain Current(1) (VDS = 15 Vdc, VGS = 0) Drain-Source On-Voltage (ID = 6.0 mAdc, VGS = 0) (ID = 3.0 mAdc, VGS = 0) Static Drain-Source On Resistance (ID = 1.0 mAdc, VGS = 0) IDSS MPF4392 MPF4393 mAdc VDS(on) MPF4392 MPF4393 Vdc rDS(on) MPF4392 MPF4393 SMALL-SIGNAL CHARACTERISTICS Forward Transfer Admittance (VDS = 15 Vdc, ID = 25 mAdc, f = 1.0 kHz) (VDS = 15 Vdc, ID = 5.0 mAdc, f = 1.0 kHz) |yfs| MPF4392 MPF4393 mmhos 1. Pulse Test: Pulse Width 300 s, Duty Cycle 3.0%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 2 776 Publication Order Number: MPF4392/D MPF4392 MPF4393 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max - - - - 60 100 - 6.0 10 - - 2.5 3.2 3.5 - - - 2.0 2.5 5.0 5.0 - - 15 29 20 35 - - 4.0 6.5 15 15 - - 20 37 35 55 Unit SMALL-SIGNAL CHARACTERISTICS (continued) Drain-Source "ON" Resistance (VGS = 0, ID = 0, f = 1.0 kHz) rds(on) MPF4392 MPF4393 Input Capacitance (VGS = 15 Vdc, VDS = 0, f = 1.0 MHz) Ciss Reverse Transfer Capacitance (VGS = 12 Vdc, VDS = 0, f = 1.0 MHz) (VDS = 15 Vdc, ID = 10 mAdc, f = 1.0 MHz) Crss pF pF SWITCHING CHARACTERISTICS Rise Time (See Figure 2) (ID(on) = 6.0 mAdc) (ID(on) = 3.0 mAdc) MPF4392 MPF4393 tr Fall Time (See Figure 4) (VGS(off) = 7.0 Vdc) (VGS(off) = 5.0 Vdc) MPF4392 MPF4393 Turn-On Time (See Figures 1 and 2) (ID(on) = 6.0 mAdc) (ID(on) = 3.0 mAdc) MPF4392 MPF4393 Turn-Off Time (See Figures 3 and 4) (VGS(off) = 7.0 Vdc) (VGS(off) = 5.0 Vdc) MPF4392 MPF4393 ns tf ns ton ns toff http://onsemi.com 777 ns MPF4392 MPF4393 TYPICAL SWITCHING CHARACTERISTICS 500 200 1000 TJ = 25C RK = RD 100 MPF4392 MPF4393 500 VGS(off) = 7.0 V = 5.0 V 100 50 20 10 5.0 RK = 0 5.0 7.0 10 2.0 3.0 ID, DRAIN CURRENT (mA) 20 30 20 10 1.0 0.5 0.7 1.0 50 MPF4392 MPF4393 200 100 5.0 7.0 10 2.0 3.0 ID, DRAIN CURRENT (mA) 1000 500 VGS(off) = 7.0 V = 5.0 V RK = RD 200 t f , FALL TIME (ns) t d(off) , TURN-OFF DELAY TIME (ns) RK = 0 20 30 50 Figure 2. Rise Time TJ = 25C 500 RK = RD 20 10 RK = 0 100 TJ = 25C MPF4392 MPF4393 VGS(off) = 7.0 V = 5.0 V 50 20 10 RK = 0 5.0 2.0 2.0 1.0 0.5 0.7 1.0 VGS(off) = 7.0 V = 5.0 V 2.0 1000 5.0 MPF4392 MPF4393 50 Figure 1. Turn-On Delay Time 50 TJ = 25C 5.0 2.0 1.0 0.5 0.7 1.0 RK = RD 200 t r , RISE TIME (ns) t d(on), TURN-ON DELAY TIME (ns) 1000 2.0 3.0 5.0 7.0 10 ID, DRAIN CURRENT (mA) 20 30 1.0 0.5 0.7 1.0 50 Figure 3. Turn-Off Delay Time 5.0 7.0 10 2.0 3.0 ID, DRAIN CURRENT (mA) Figure 4. Fall Time http://onsemi.com 778 20 30 50 MPF4392 MPF4393 NOTE 1 -VDD RD SET VDS(off) = 10 V INPUT RK RT RGEN 50 RGG 50 50 VGG VGEN INPUT PULSE tr 0.25 ns tf 0.5 ns PULSE WIDTH = 2.0 s DUTY CYCLE 2.0% RGG RK RD = RD(RT + 50) RD + RT + 50 15 20 MPF4392 10 10 C, CAPACITANCE (pF) y fs , FORWARD TRANSFER ADMITTANCE (mmhos) Figure 5. Switching Time Test Circuit The switching characteristics shown above were measured using a test circuit similar to Figure 5. At the beginning of the switching interval, the gate voltage is at Gate Supply Voltage (-VGG). The Drain-Source Voltage (VDS) is slightly lower than Drain Supply Voltage (VDD) due to the voltage divider. Thus Reverse Transfer Capacitance (Crss) or Gate-Drain Capacitance (Cgd) is charged to VGG + VDS. During the turn-on interval, Gate-Source Capacitance (Cgs) disOUTPUT charges through the series combination of RGen and RK. Cgd must discharge to VDS(on) through RG and RK in series with the parallel combination of effective load impedance (RD) and Drain-Source Resistance (rds). During the turn-off, this charge flow is reversed. Predicting turn-on time is somewhat difficult as the channel resistance rds is a function of the gate-source voltage. While Cgs discharges, VGS approaches zero and rds decreases. Since Cgd discharges through rds, turn-on time is non-linear. During turn-off, the situation is reversed with rds increasing as Cgd charges. The above switching curves show two impedance conditions: 1) RK is equal to RD which simulates the switching behavior of cascaded stages where the driving source impedance is normally the load impedance of the previous stage, and 2) RK = 0 (low impedance) the driving source impedance is that of the generator. MPF4393 7.0 5.0 Tchannel = 25C VDS = 15 V 3.0 Cgs 7.0 5.0 Cgd Tchannel = 25C (Cds IS NEGLIGIBLE) 3.0 2.0 1.5 2.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 ID, DRAIN CURRENT (mA) 20 30 50 1.0 0.03 0.05 0.1 25 mA 50 mA 75 mA 100 mA 120 80 40 Tchannel = 25C 0 0 1.0 2.0 3.0 5.0 4.0 6.0 VGS, GATE-SOURCE VOLTAGE (VOLTS) 30 2.0 125 mA rds(on) , DRAIN-SOURCE ON-STATE RESISTANCE (NORMALIZED) rds(on) , DRAIN-SOURCE ON-STATE RESISTANCE (OHMS) IDSS = 10 160 mA 10 Figure 7. Typical Capacitance Figure 6. Typical Forward Transfer Admittance 200 0.3 0.5 1.0 3.0 5.0 VR, REVERSE VOLTAGE (VOLTS) 7.0 8.0 1.8 ID = 1.0 mA VGS = 0 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -70 -40 110 -10 20 50 80 Tchannel, CHANNEL TEMPERATURE (C) 140 Figure 9. Effect of Temperature On Drain-Source On-State Resistance Figure 8. Effect of Gate-Source Voltage On Drain-Source Resistance http://onsemi.com 779 170 MPF4392 MPF4393 90 10 Tchannel = 25C 80 70 8.0 7.0 rDS(on) @ VGS = 0 60 50 NOTE 2 9.0 6.0 VGS(off) 5.0 40 4.0 30 3.0 20 2.0 10 1.0 V GS , GATE-SOURCE VOLTAGE (VOLTS) r ds(on), DRAIN-SOURCE ON-STATE RESISTANCE (OHMS) 100 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 IDSS, ZERO-GATE VOLTAGE DRAIN CURRENT (mA) Figure 10. Effect of IDSS On Drain-Source Resistance and Gate-Source Voltage The Zero-Gate-Voltage Drain Current (IDSS), is the principle determinant of other J-FET characteristics. Figure 10 shows the relationship of Gate-Source Off Voltage (VGS(off)) and Drain-Source On Resistance (rds(on)) to IDSS. Most of the devices will be within 10% of the values shown in Figure 10. This data will be useful in predicting the characteristic variations for a given part number. For example: Unknown rds(on) and VGS range for an MPF4392 The electrical characteristics table indicates that an MPF4392 has an IDSS range of 25 to 75 mA. Figure 10 shows rds(on) = 52 Ohms for IDSS = 25 mA and 30 Ohms for IDSS = 75 mA. The corresponding VGS values are 2.2 volts and 4.8 volts. http://onsemi.com 780 ON Semiconductor JFET Switching MPF4856 N-Channel - Depletion MAXIMUM RATINGS Rating Symbol MPF4856 Unit Drain-Source Voltage VDS +40 Vdc Drain-Gate Voltage VDG +40 Vdc Reverse Gate-Source Voltage VGSR -40 Vdc Forward Gate Current IGF 50 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 360 2.4 mW mW/C Storage Temperature Range Tstg -65 to +150 C 1 2 3 CASE 29-11, STYLE 5 TO-92 (TO-226AA) 1 DRAIN 3 GATE ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) 2 SOURCE Symbol Characteristic Min Max Unit -40 - - - 0.25 0.5 nAdc Adc VGS(off) -4.0 -10 Vdc ID(off) - - 0.25 0.5 nAdc Adc IDSS 50 - mAdc - 0.75 - 25 - 18 - 8.0 OFF CHARACTERISTICS Gate-Source Breakdown Voltage (IG = 1.0 Adc, VDS = 0) V(BR)GSS Gate Reverse Current (VGS = -20 Vdc, VDS = 0) (VGS = -20 Vdc, VDS = 0, TA = 150C) Vdc IGSS Gate Source Cutoff Voltage Drain-Cutoff Current (VDS = 15 Vdc, VGS = -10 Vdc) (VDS = 15 Vdc, VGS = -10 Vdc, TA = 150C) ON CHARACTERISTICS Zero-Gate-Voltage Drain Current(1) Drain-Source On-Voltage (ID = 20 mAdc, VGS = 0) VDS(on) Vdc SMALL-SIGNAL CHARACTERISTICS Drain-Source "ON" Resistance rds(on) Input Capacitance (VDS = 0, VGS = -10 Vdc, f = 1.0 MHz) Ciss Reverse Transfer Capacitance (VDS = 0, VGS = -10 Vdc, f = 1.0 MHz) Crss pF pF 1. Pulse Test: Pulse Width < 300 s, Duty Cycle 2.0%. Semiconductor Components Industries, LLC, 2001 June, 2001 - Rev.0 781 Publication Order Number: MPF4856/D MPF4856 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit SWITCHING CHARACTERISTICS Turn-On Delay Time Conditions for MPF4856, MPF4859: (VDD = 10 Vdc, ID(on) = 20 mAdc, VGS(on) = 0, VGS(off) = -10 Vdc) MPF4856, MPF4859 MPF4857, MPF4860 MPF4861 td(on) - - - 6.0 6.0 10 ns Rise Time Conditions for MPF4857, MPF4860: (VDD = 10 Vdc, ID(on) = 10 mAdc, VGS(on) = 0, VGS(off) = -6.0 Vdc) MPF4856, MPF4859 MPF4857, MPF4860 MPF4861 tr - - - 3.0 4.0 10 ns Turn-Off Time Conditions for MPF4858, MPF4861: (VDD = 10 Vdc, ID(on) = 5.0 mAdc, VGS(on) = 0, VGS(off) = -4.0 Vdc) MPF4856, MPF4859 MPF4857, MPF4860 MPF4861 toff - - - 25 50 100 ns TYPICAL SWITCHING CHARACTERISTICS 200 1000 TJ = 25C 500 RK = RD 100 MPF4391 MPF4392 MPF4393 500 VGS(off) = 12 V = 7.0 V = 5.0 V 100 50 20 10 5.0 RK = 0 50 20 10 5.0 7.0 10 2.0 3.0 ID, DRAIN CURRENT (mA) 20 30 1.0 0.5 0.7 1.0 50 1000 TJ = 25C 500 MPF4391 MPF4392 MPF4393 200 100 500 VGS(off) = 12 V = 7.0 V = 5.0 V 20 30 50 TJ = 25C RK = RD 200 RK = RD 20 10 RK = 0 100 MPF4391 MPF4392 MPF4393 VGS(off) = 12 V = 7.0 V = 5.0 V 50 20 10 RK = 0 5.0 2.0 2.0 1.0 0.5 0.7 1.0 5.0 7.0 10 2.0 3.0 ID, DRAIN CURRENT (mA) Figure 2. Rise Time t f , FALL TIME (ns) t d(off) , TURN-OFF DELAY TIME (ns) 1000 5.0 RK = 0 2.0 Figure 1. Turn-On Delay Time 50 TJ = 25C MPF4391 VGS(off) = 12 V MPF4392 = 7.0 V MPF4393 = 5.0 V 5.0 2.0 1.0 0.5 0.7 1.0 RK = RD 200 t r , RISE TIME (ns) t d(on), TURN-ON DELAY TIME (ns) 1000 2.0 3.0 5.0 7.0 10 ID, DRAIN CURRENT (mA) 20 30 1.0 0.5 0.7 1.0 50 Figure 3. Turn-Off Delay time 5.0 7.0 10 2.0 3.0 ID, DRAIN CURRENT (mA) Figure 4. Fall Time http://onsemi.com 782 20 30 50 MPF4856 NOTE 1 The switching characteristics shown above were measured using a test circuit similar to Figure 5. At the beginning of the switching interval, the gate voltage is at Gate Supply Voltage (-VGG). The Drain-Source Voltage (VDS) is slightly lower than Drain Supply Voltage (VDD) due to the voltage divider. Thus Reverse Transfer Capacitance (Crss) or Gate-Drain Capacitance (Cgd) is charged to VGG + VDS. During the turn-on interval, Gate-Source Capacitance (Cgs) discharges through the series combination of RGen and RK. Cgd must discharge to VDS(on) through RG and RK in series with the parallel combination of effective load impedance (RD) and Drain-Source Resistance (rds). During the turn-off, this charge flow is reversed. Predicting turn-on time is somewhat difficult as the channel resistance rds is a function of the gate-source voltage. While Cgs discharges, VGS approaches zero and rds decreases. Since Cgd discharges through rds, turn-on time is non-linear. During turn-off, the situation is reversed with rds increasing as Cgd charges. The above switching curves show two impedance conditions: 1) RK is equal to RD which simulates the switching behavior of cascaded stages where the driving source impedance is normally the load impedance of the previous stage, and 2) RK = 0 (low impedance) the driving source impedance is that of the generator. -VDD RD SET VDS(off) = 10 V INPUT RK RT RGEN 50 OUTPUT RGG 50 50 VGG VGEN INPUT PULSE tr 0.25 ns tf 0.5 ns PULSE WIDTH = 2.0 s DUTY CYCLE 2.0% RGG RK RD = RD(RT + 50) RD + RT + 50 20 20 MPF4392 MPF4391 10 10 C, CAPACITANCE (pF) y fs , FORWARD TRANSFER ADMITTANCE (mmhos) Figure 5. Switching Time Test Circuit MPF4393 7.0 5.0 Tchannel = 25C VDS = 15 V 3.0 Cgs 7.0 5.0 Cgd Tchannel = 25C (Cds IS NEGLIGIBLE) 3.0 2.0 1.5 2.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 ID, DRAIN CURRENT (mA) 20 30 50 1.0 0.03 0.05 0.1 Figure 6. Typical Forward Transfer Admittance IDSS = 10 160 mA 25 mA 50 mA 75 mA 100 mA 80 40 Tchannel = 25C 0 1.0 2.0 3.0 5.0 4.0 6.0 VGS, GATE-SOURCE VOLTAGE (VOLTS) 30 2.0 125 mA 120 0 10 Figure 7. Typical Capacitance 7.0 rds(on) , DRAIN-SOURCE ON-STATE RESISTANCE (NORMALIZED) rds(on) , DRAIN-SOURCE ON-STATE RESISTANCE (NORMALIZED) 200 0.3 0.5 1.0 3.0 5.0 VR, REVERSE VOLTAGE (VOLTS) 8.0 1.8 ID = 1.0 mA VGS = 0 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -70 Figure 8. Effect of Gate-Source Voltage On Drain-Source Resistance -40 110 -10 20 50 80 Tchannel, CHANNEL TEMPERATURE (C) 140 Figure 9. Effect of Temperature On Drain-Source On-State Resistance http://onsemi.com 783 170 MPF4856 90 10 Tchannel = 25C 80 70 8.0 7.0 rDS(on) @ VGS = 0 60 50 NOTE 2 9.0 6.0 VGS(off) 5.0 40 4.0 30 3.0 20 2.0 10 1.0 V GS , GATE-SOURCE VOLTAGE (VOLTS) r ds(on), DRAIN-SOURCE ON-STATE RESISTANCE (OHMS) 100 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 IDSS, ZERO-GATE VOLTAGE DRAIN CURRENT (mA) Figure 10. Effect of IDSS On Drain-Source Resistance and Gate-Source Voltage The Zero-Gate-Voltage Drain Current (IDSS), is the principle determinant of other J-FET characteristics. Figure 10 shows the relationship of Gate-Source Off Voltage (VGS(off)) and Drain-Source On Resistance (rds(on)) to IDSS. Most of the devices will be within 10% of the values shown in Figure 10. This data will be useful in predicting the characteristic variations for a given part number. For example: Unknown rds(on) and VGS range for an MPF4392 The electrical characteristics table indicates that an MPF4392 has an IDSS range of 25 to 75 mA. Figure 10 shows rds(on) = 52 Ohms for IDSS = 25 mA and 30 Ohms for IDSS = 75 mA. The corresponding VGS values are 2.2 volts and 4.8 volts. http://onsemi.com 784 ON Semiconductor MPN3404 Silicon Pin Diode This device is designed primarily for VHF band switching applications but is also suitable for use in general-purpose switching circuits. It is supplied in a cost-effective TO-92 type plastic package for economical, high-volume consumer and industrial requirements. * Rugged PIN Structure Coupled with Wirebond 1 Construction for Optimum Reliability Anode * Low Series Resistance @ 100 MHz RS = 0.7 Ohms (Typ) @ IF = 10 mAdc * Sturdy TO-92 Style Package for Handling Ease SILICON PIN SWITCHING DIODE 2 Cathode 1 MAXIMUM RATINGS Rating 2 Symbol Value Unit Reverse Voltage VR 20 Vdc Forward Power Dissipation @ TA = 25C Derate above 25C PD 400 4.0 mW mW/C Junction Temperature TJ +125 C Storage Temperature Range Tstg -55 to +150 C CASE 182-06, STYLE 1 TO-92 (TO-226AC) ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage (IR = 10 Adc) V(BR)R 20 -- -- Vdc Diode Capacitance (VR = 15 Vdc, f = 1.0 MHz) CT -- 1.3 2.0 pF Series Resistance (Figure 5) (IF = 10 mAdc) RS -- 0.7 0.85 Reverse Leakage Current (VR = 15 Vdc) IR -- -- 0.1 Adc Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev.1 785 Publication Order Number: MPN3404/D MPN3404 TYPICAL CHARACTERISTICS 50 1.6 I F , FORWARD CURRENT (mA) R S , SERIES RESISTANCE (OHMS) 1.8 1.4 1.2 1.0 0.8 0.6 0.4 0 2.0 6.0 4.0 8.0 10 12 30 TA = 25C 20 10 0 0.5 14 0.6 0.7 0.8 0.9 1.0 +100 +140 IF, FORWARD CURRENT (mA) VF, FORWARD VOLTAGE (VOLTS) Figure 1. Series Resistance Figure 2. Forward Voltage 10 100 40 7.0 5.0 I R , REVERSE CURRENT ( A) C T , DIODE CAPACITANCE (pF) 40 TA = 25C 4.0 3.0 2.0 10 4.0 VR = 15 Vdc 1.0 0.4 0.1 0.04 0.01 0.004 1.0 +3.0 0 -3.0 -6.0 -9.0 -12 -15 -18 0.001 -60 -21 VR, REVERSE VOLTAGE (VOLTS) -20 0 +20 +60 TA, AMBIENT TEMPERATURE (C) Figure 3. Diode Capacitance Figure 4. Leakage Current http://onsemi.com 786 MPS2222, MPS2222A MPS2222A is a Preferred Device General Purpose Transistors NPN Silicon http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value VCEO MPS2222 MPS2222A Collector-Base Voltage 30 40 MPS2222 MPS2222A 1 EMITTER Vdc 60 75 VEBO MPS2222 MPS2222A IC Total Device Dissipation @ TA = 25C Derate above 25C PD Total Device Dissipation @ TC = 25C Derate above 25C PD 1 2 600 mAdc 625 5.0 mW mW/C 1.5 12 Watts mW/C -55 to +150 C Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W TJ, Tstg TO-92 CASE 29 STYLE 1 Vdc 5.0 6.0 Collector Current - Continuous Operating and Storage Junction Temperature Range 2 BASE Vdc VCBO Emitter-Base Voltage Unit 3 MARKING DIAGRAMS MPS 2222 YWW Y WW THERMAL CHARACTERISTICS Characteristic MPS2 222A YWW = Year = Work Week ORDERING INFORMATION Device Package Shipping MPS2222 TO-92 5000 Units/Box MPS2222A TO-92 5000 Units/Box MPS2222ARLRA TO-92 2000/Tape & Reel MPS2222ARLRM TO-92 2000/Ammo Pack MPS2222ARLRP TO-92 2000/Ammo Pack MPS2222RLRA TO-92 2000/Tape & Reel MPS2222RLRM TO-92 2000/Ammo Pack MPS2222RLRP TO-92 2000/Ammo Pack Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 October, 2001 - Rev. 1 787 Publication Order Number: MPS2222/D MPS2222, MPS2222A ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) MPS2222 MPS2222A V(BR)CEO 30 40 - - Vdc Collector-Base Breakdown Voltage (IC = 10 Adc, IE = 0) MPS2222 MPS2222A V(BR)CBO 60 75 - - Vdc Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) MPS2222 MPS2222A V(BR)EBO 5.0 6.0 - - Vdc Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) ICEX - 10 nAdc MPS2222A Collector Cutoff Current (VCB = 50 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) (VCB = 50 Vdc, IE = 0, TA = 125C) (VCB = 50 Vdc, IE = 0, TA = 125C) MPS2222 MPS2222A MPS2222 MPS2222A - - - - 0.01 0.01 10 10 Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) IEBO - 100 nAdc MPS2222A Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) IBL - 20 nAdc MPS2222A 35 50 75 35 100 50 30 40 - - - - 300 - - - MPS2222 MPS2222A - - 0.4 0.3 MPS2222 MPS2222A - - 1.6 1.0 MPS2222 MPS2222A - 0.6 1.3 1.2 MPS2222 MPS2222A - - 2.6 2.0 Adc ICBO ON CHARACTERISTICS DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc, TA = -55C) (IC = 150 mAdc, VCE = 10 Vdc) (Note 1.) (IC = 150 mAdc, VCE = 1.0 Vdc) (Note 1.) (IC = 500 mAdc, VCE = 10 Vdc) (Note 1.) hFE MPS2222A only MPS2222 MPS2222A Collector-Emitter Saturation Voltage (Note 1.) (IC = 150 mAdc, IB = 15 mAdc) - VCE(sat) (IC = 500 mAdc, IB = 50 mAdc) Base-Emitter Saturation Voltage (Note 1.) (IC = 150 mAdc, IB = 15 mAdc) Vdc VBE(sat) (IC = 500 mAdc, IB = 50 mAdc) 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. http://onsemi.com 788 Vdc MPS2222, MPS2222A ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit 250 300 - - - 8.0 - - 30 25 2.0 0.25 8.0 1.25 - - 8.0 4.0 50 75 300 375 5.0 25 35 200 rbCc - 150 ps NF - 4.0 dB (VCC = 30 Vdc, VBE(off) = -0.5 0.5 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) (Figure 1) td - 10 ns tr - 25 ns (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) (Figure 2) ts - 225 ns tf - 60 ns SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (Note 2.) (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) fT MPS2222 MPS2222A Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) MHz Cobo Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) pF Cibo pF MPS2222 MPS2222A Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MPS2222A MPS2222A hie Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MPS2222A MPS2222A Small-Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MPS2222A MPS2222A Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MPS2222A MPS2222A Collector Base Time Constant (IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz) MPS2222A k X 10-4 hre hfe - mhos hoe Noise Figure (IC = 100 Adc, VCE = 10 Vdc, RS = 1.0 k, f = 1.0 kHz) MPS2222A SWITCHING CHARACTERISTICS MPS2222A only Delay Time Rise Time Storage Time Fall Time 2. fT is defined as the frequency at which |hfe| extrapolates to unity. SWITCHING TIME EQUIVALENT TEST CIRCUITS +30 V +30 V 1.0 to 100 s, DUTY CYCLE 2.0% +16 V 0 -2 V 200 +16 V 0 < 2 ns 1 k CS* < 10 pF -14 V 1.0 to 100 s, DUTY CYCLE 2.0% < 20 ns 1k 1N914 -4 V Scope rise time < 4 ns *Total shunt capacitance of test jig, connectors, and oscilloscope. Figure 1. Turn-On Time Figure 2. Turn-Off Time http://onsemi.com 789 200 CS* < 10 pF MPS2222, MPS2222A hFE , DC CURRENT GAIN 1000 700 500 TJ = 125C 300 200 25C 100 70 50 -55C 30 VCE = 1.0 V VCE = 10 V 20 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA) 30 50 70 100 200 300 500 700 1.0 k VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. DC Current Gain 1.0 TJ = 25C 0.8 0.6 IC = 1.0 mA 10 mA 150 mA 500 mA 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 IB, BASE CURRENT (mA) 2.0 Figure 4. Collector Saturation Region http://onsemi.com 790 3.0 5.0 10 20 30 50 MPS2222, MPS2222A 200 100 70 50 tr @ VCC = 30 V td @ VEB(off) = 2.0 V td @ VEB(off) = 0 30 20 10 7.0 5.0 200 ts = ts - 1/8 tf 100 70 50 tf 30 20 10 7.0 5.0 3.0 2.0 5.0 7.0 10 200 300 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 500 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) Figure 5. Turn-On Time 6.0 f = 1.0 kHz 8.0 4.0 2.0 IC = 50 A 100 A 500 A 1.0 mA 6.0 4.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) Figure 7. Frequency Effects Figure 8. Source Resistance Effects Ceb 10 7.0 5.0 Ccb 3.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE VOLTAGE (VOLTS) 20 30 50 f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) f, FREQUENCY (kHz) 20 0.2 0.3 0 50 50 100 20 30 CAPACITANCE (pF) 500 10 RS = OPTIMUM RS = SOURCE RS = RESISTANCE IC = 1.0 mA, RS = 150 500 A, RS = 200 100 A, RS = 2.0 k 50 A, RS = 4.0 k 8.0 300 Figure 6. Turn-Off Time NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 10 2.0 0.1 VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25C 300 t, TIME (ns) t, TIME (ns) 500 IC/IB = 10 TJ = 25C 500 VCE = 20 V TJ = 25C 300 200 100 70 50 1.0 Figure 9. Capacitances 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 10. Current-Gain Bandwidth Product http://onsemi.com 791 MPS2222, MPS2222A 1.0 +0.5 TJ = 25C 0 VBE(sat) @ IC/IB = 10 0.6 COEFFICIENT (mV/ C) V, VOLTAGE (VOLTS) 0.8 1.0 V VBE(on) @ VCE = 10 V 0.4 0.2 0 RVC for VCE(sat) -0.5 -1.0 -1.5 RVB for VBE -2.0 VCE(sat) @ IC/IB = 10 0.1 0.2 50 100 200 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 500 1.0 k -2.5 0.1 0.2 Figure 11. "On" Voltages 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) Figure 12. Temperature Coefficients http://onsemi.com 792 500 ON Semiconductor MPS2369 MPS2369A* Switching Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 15 Vdc Collector-Emitter Voltage VCES 40 Vdc Collector-Base Voltage VCBO 40 Vdc Emitter-Base Voltage VEBO 4.5 Vdc Collector Current -- Continuous IC 200 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C TJ, Tstg -55 to +150 C Symbol Max Unit RJA 200 C/W Operating and Storage Junction Temperature Range 1 2 3 CASE 29-11, STYLE 1 TO-92 (TO-226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient COLLECTOR 3 2 BASE 1 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)CEO 15 -- -- Vdc V(BR)CES 40 -- -- Vdc V(BR)CBO 40 -- -- Vdc V(BR)EBO 4.5 -- -- Vdc -- -- -- -- 0.4 30 -- -- 0.4 OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) MPS2369A Collector-Emitter Breakdown Voltage (IC = 10 Adc, VBE = 0) MPS2369,A Collector-Base Breakdown Voltage (IC = 10 Adc, IE = 0) MPS2369,A Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) MPS2369,A Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 20 Vdc, IE = 0, TA = 125C) MPS2369,A Collector Cutoff Current (VCE = 20 Vdc, VBE = 0) MPS2369,A Adc ICBO ICES Adc 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 June, 2001 - Rev. 2 793 Publication Order Number: MPS2369/D MPS2369 MPS2369A ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Characteristic Min Typ Max Unit -- 20 40 40 20 30 20 20 -- -- -- -- -- -- -- -- 120 -- 120 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 0.25 0.20 0.30 0.25 0.50 0.7 0.5 -- -- -- -- -- -- -- -- 0.85 -- 1.02 1.15 1.60 Cobo -- -- 4.0 pF hfe 5.0 -- -- -- ts -- 5.0 13 ns ton -- 8.0 12 ns toff -- 10 18 ns ON CHARACTERISTICS DC Current Gain(1) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc, TA = -55C) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 0.35 Vdc) (IC = 10 mAdc, VCE = 0.35 Vdc, TA = -55C) (IC = 30 mAdc, VCE = 0.4 Vdc) (IC = 100 mAdc, VCE = 2.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) MPS2369A MPS2369 MPS2369 MPS2369A MPS2369A MPS2369A MPS2369 MPS2369A Collector-Emitter Saturation Voltage(1) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc, TA = +125C) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc) MPS2369 MPS2369A MPS2369A MPS2369A MPS2369A Base-Emitter Saturation Voltage(1) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc, TA = +125C) (IC = 10 mAdc, IB = 1.0 mAdc, TA = -55C) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc) MPS2369 MPS2369A MPS2369A MPS2369A MPS2369A hFE -- VCE(sat) Vdc VBE(sat) Vdc SMALL-SIGNAL CHARACTERISTICS Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) MPS2369,A Small-Signal Current Gain (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) MPS2369,A SWITCHING CHARACTERISTICS Storage Time (IB1 = IB2 = IC = 10 mAdc) (Figure 3) MPS2369,A Turn-On Time (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc) (Figure 1) MPS2369,A Turn-Off Time (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc, IB2 = 1.5 mAdc) (Figure 2) MPS2369,A 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. http://onsemi.com 794 MPS2369 MPS2369A 3.0 V t1 +10.6 V 0 -1.5 V 270 3.3 k < 1.0 ns CS* < 4.0 pF PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2.0% Figure 1. ton Circuit +10.75 V t1 3.0 V 0 -4.15 V 270 < 1.0 ns 3.3 k PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2.0% CS* < 4.0 pF Figure 2. toff Circuit +6.0 V t1 10 V 980 0 -4.0 V 500 < 1.0 ns PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2.0% CS* < 3.0 pF Figure 3. Storage Test Circuit *Total shunt capacitance of test jig and connectors. http://onsemi.com 795 MPS2907A Preferred Device General Purpose Transistors PNP Silicon http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO -60 Vdc Collector-Base Voltage VCBO -60 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current - Continuous IC -600 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD Total Device Dissipation @ TC = 25C Derate above 25C PD mW mW/C 1.5 12 Watts mW/C -55 to +150 C Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W TJ, Tstg 1 EMITTER STYLE 1 625 5.0 Operating and Storage Junction Temperature Range 2 BASE TO-92 CASE 29 STYLES 1, 14 1 2 3 MARKING DIAGRAMS THERMAL CHARACTERISTICS Characteristic MPS2 907A YWW Y WW = Year = Work Week ORDERING INFORMATION Device Package Shipping MPS2907A TO-92 5000 Units/Box MPS2907ARLRA TO-92 2000/Tape & Reel MPS2907ARLRE TO-92 2000/Ammo Pack MPS2907ARLRM TO-92 2000/Ammo Pack MPS2907ARLRP TO-92 2000/Ammo Pack Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 October, 2001 - Rev. 0 796 Publication Order Number: MPS2907A/D MPS2907A ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max -60 - Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Note 1.) (IC = -10 mAdc, IB = 0) V(BR)CEO Vdc Collector-Base Breakdown Voltage (IC = -10 Adc, IE = 0) V(BR)CBO -60 - Vdc Emitter-Base Breakdown Voltage (IE = -10 Adc, IC = 0) V(BR)EBO -5.0 - Vdc Collector Cutoff Current (VCE = -30 Vdc, VEB(off) = -0.5 Vdc) ICEX - -50 nAdc Collector Cutoff Current (VCB = -50 Vdc, IE = 0) (VCB = -50 Vdc, IE = 0, TA = 150C) ICBO - - -0.01 -10 Base Current (VCE = -30 Vdc, VEB(off) = -0.5 Vdc) IB - -50 75 100 100 100 50 - - - 300 - - - -0.4 -1.6 - - -1.3 -2.6 fT 200 - MHz Output Capacitance (VCB = -10 Vdc, IE = 0, f = 1.0 MHz) Cobo - 8.0 pF Input Capacitance (VEB = -2.0 Vdc, IC = 0, f = 1.0 MHz) Cibo - 30 pF ton - 45 ns td - 10 ns tr - 40 ns toff - 100 ns ts - 80 ns tf - 30 ns Adc nAdc ON CHARACTERISTICS DC Current Gain (IC = -0.1 mAdc, VCE = -10 Vdc) (IC = -1.0 mAdc, VCE = -10 Vdc) (IC = -10 mAdc, VCE = -10 Vdc) (IC = -150 mAdc, VCE = -10 Vdc) (Note 1.) (IC = -500 mAdc, VCE = -10 Vdc) (Note 1.) hFE Collector-Emitter Saturation Voltage (Note 1.) (IC = -150 mAdc, IB = -15 mAdc) (IC = -500 mAdc, IB = -50 mAdc) VCE(sat) Base-Emitter Saturation Voltage (Note 1.) (IC = -150 mAdc, IB = -15 mAdc) (IC = -500 mAdc, IB = -50 mAdc) VBE(sat) - Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (Notes 1. and 2.), (IC = -50 mAdc, VCE = -20 Vdc, f = 100 MHz) SWITCHING CHARACTERISTICS Turn-On Time Delay Time (VCC = -30 Vdc, IC = -150 mAdc, IB1 = -15 15 mAdc) Ad ) (Figures (Fi 1 and d 5) Rise Time Turn-Off Time Storage Time (VCC = -6.0 Vdc, IC = -150 mAdc, IB1 = IB2 = 15 mAdc) Ad ) (Figure (Fi 2) Fall Time 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 2. fT is defined as the frequency at which |hfe| extrapolates to unity. http://onsemi.com 797 MPS2907A INPUT Zo = 50 PRF = 150 PPS RISE TIME 2.0 ns P.W. < 200 ns -30 V 200 1.0 k 0 50 -16 V INPUT Zo = 50 PRF = 150 PPS RISE TIME 2.0 ns P.W. < 200 ns TO OSCILLOSCOPE RISE TIME 5.0 ns +15 V -6.0 V 1.0 k 1.0 k 0 -30 V 50 37 TO OSCILLOSCOPE RISE TIME 5.0 ns 1N916 200 ns 200 ns Figure 1. Delay and Rise Time Test Circuit Figure 2. Storage and Fall Time Test Circuit TYPICAL CHARACTERISTICS hFE , NORMALIZED CURRENT GAIN 3.0 VCE = -1.0 V VCE = -10 V 2.0 TJ = 125C 25C 1.0 -55C 0.7 0.5 0.3 0.2 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. DC Current Gain -1.0 -0.8 IC = -1.0 mA -10 mA -100 mA -500 mA -0.6 -0.4 -0.2 0 -0.005 -0.01 -0.02 -0.03 -0.05 -0.07 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 IB, BASE CURRENT (mA) -2.0 Figure 4. Collector Saturation Region http://onsemi.com 798 -3.0 -5.0 -7.0 -10 -20 -30 -50 MPS2907A TYPICAL CHARACTERISTICS 500 tr 100 70 50 300 VCC = -30 V IC/IB = 10 TJ = 25C 200 t, TIME (ns) t, TIME (ns) 300 200 30 20 10 td @ VBE(off) = 0 V tf 100 70 50 ts = ts - 1/8 tf 30 20 7.0 5.0 3.0 -5.0 -7.0 -10 VCC = -30 V IC/IB = 10 IB1 = IB2 TJ = 25C 10 7.0 5.0 -5.0 -7.0 -10 2.0 V -20 -30 -50 -70 -100 IC, COLLECTOR CURRENT -200 -300 -500 Figure 5. Turn-On Time -20 -30 -50 -70 -100 -200 -300 -500 IC, COLLECTOR CURRENT (mA) Figure 6. Turn-Off Time TYPICAL SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VCE = 10 Vdc, TA = 25C 10 10 8.0 8.0 6.0 4.0 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) f = 1.0 kHz IC = -1.0 mA, Rs = 430 -500 A, Rs = 560 -50 A, Rs = 2.7 k -100 A, Rs = 1.6 k Rs = OPTIMUM SOURCE RESISTANCE 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 6.0 IC = -50 A -100 A -500 A -1.0 mA 4.0 2.0 100 0 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k f, FREQUENCY (kHz) Rs, SOURCE RESISTANCE (OHMS) Figure 7. Frequency Effects Figure 8. Source Resistance Effects http://onsemi.com 799 50 k MPS2907A TYPICAL SMALL-SIGNAL CHARACTERISTICS f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) NOISE FIGURE VCE = 10 Vdc, TA = 25C 30 C, CAPACITANCE (pF) 20 Ceb 10 7.0 Ccb 5.0 3.0 2.0 -0.1 -0.2 -0.3 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 300 200 100 80 VCE = -20 V TJ = 25C 60 40 30 20 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -1000 REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 9. Capacitances Figure 10. Current-Gain -- Bandwidth Product +0.5 -1.0 -0.8 -0.6 0 VBE(sat) @ IC/IB = 10 COEFFICIENT (mV/ C) TJ = 25C V, VOLTAGE (VOLTS) 400 VBE(on) @ VCE = -10 V -0.4 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -0.5 -1.0 -1.5 RVB for VBE -2.0 VCE(sat) @ IC/IB = 10 0 -0.1 -0.2 RVC for VCE(sat) -50 -100 -200 -500 -2.5 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 11. "On" Voltage Figure 12. Temperature Coefficients http://onsemi.com 800 ON Semiconductor Switching Transistor MPS3646 NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 15 Vdc Collector-Emitter Voltage VCES 40 Vdc Collector-Base Voltage VCBO 40 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector Current -- Continuous -- 10 s Pulse IC 300 500 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watts mW/C TJ, Tstg -55 to +150 C Operating and Storage Junction Temperature Range 1 2 CASE 29-11, STYLE 1 TO-92 (TO-226AA) COLLECTOR 3 2 BASE THERMAL CHARACTERISTICS Characteristic 3 Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W 1 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Min Max Unit (IC = 100 Adc, VBE = 0) V(BR)CES 40 -- Vdc (IC = 10 mAdc, IB = 0) VCEO(sus) 15 -- Vdc Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0) V(BR)CBO 40 -- Vdc Emitter-Base Breakdown Voltage (IE = 100 Adc, IC = 0) V(BR)EBO 5.0 -- Vdc -- -- 0.5 3.0 hFE 30 25 15 120 -- -- -- Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage Collector-Emitter Sustaining Voltage(1) Collector Cutoff Current (VCE = 20 Vdc, VBE = 0) (VCE = 20 Vdc, VBE = 0, TA = 65C) Adc ICES ON CHARACTERISTICS(1) DC Current Gain (IC = 30 mAdc, VCE = 0.4 Vdc) (IC = 100 mAdc, VCE = 0.5 Vdc) (IC = 300 mA, VCE = 1.0 Vdc) Collector-Emitter Saturation Voltage (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc) (IC = 300 mAdc, IB = 30 mAdc) (IC = 30 mA, IB = 3.0 mA, TA = 65C) VCE(sat) -- -- -- -- 0.2 0.28 0.5 0.3 Vdc Base-Emitter Saturation Voltage (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc) (IC = 300 mAdc, IB = 30 mA) VBE(sat) 0.73 -- -- 0.95 1.2 1.7 Vdc 1. Pulse Test: Pulse Width 300 s; Duty Cycle 2.0%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 October, 2001 - Rev. 2 801 Publication Order Number: MPS3646/D MPS3646 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Min Max Unit fT 350 -- MHz Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo -- 5.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo -- 9.0 pF ton -- 18 ns td -- 10 ns tr -- 15 ns toff -- 28 ns tf -- 15 ns ts -- 18 ns Characteristic SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 30 mAdc, VCE = 10 Vdc, f = 100 MHz) SWITCHING CHARACTERISTICS Turn-On Time Vd IC = 300 mAdc, Ad IB1 = 30 mAdc) Ad ) (VCC = 10 Vdc, (Figure 1) Delay Time Rise Time Turn-Off Time (VCC = 10 Vdc, IC = 300 mAdc, IB1 = IB2 = 30 mAdc) (Figure 1) Fall Time Storage Time (VCC = 10 Vdc, IC = 10 mAdc, IB1 = IB2 = 10 mAdc) (Figure 2) -3.0 V +10 V 33 1.0 k +7.6 V 0.1 To Sampling Scope tr < 1.0 ns Zin = 100 k 120 Vin 0 tr, tf < 1.0 ns Pulse Width 240 ns Zin = 50 50 Figure 1. Switching Time Test Circuit +10 V 91 +11 V 10% Pulse Waveform at Point "A" +6.0 V 0.1 0 -4 V 500 To Sampling Scope tr 1.0 ns Zin = 100 k 500 0 -10 V "A" Vin 10% 890 56 tr < 1.0 ns Pulse Width = 300 ns Duty Cycle = 2.0% Zin = 50 Figure 2. Charge Storage Time Test Circuit http://onsemi.com 802 ts Vout MPS3646 CURRENT GAIN CHARACTERISTICS 100 MPS3646 VCE = 1 V h FE, DC CURRENT GAIN 70 TJ = 125C 50 25C -15C 30 -55C 20 10 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA) 30 50 70 100 200 Figure 3. Minimum Current Gain "ON" CONDITION CHARACTERISTICS VCE, MAXIMUM COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 MPS3646 TJ = 25C 0.8 IC = 10 mA 50 mA 200 mA 100 mA 0.6 0.4 0.2 0 0.2 0.1 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 Vsat , SATURATION VOLTAGE (VOLTS) 1.2 1.0 IC/IB = 10 TJ = 25C V, TEMPERATURE COEFFICIENTS (mV/C) Figure 4. Collector Saturation Region MAX VBE(sat) MIN VBE(sat) 0.8 0.6 MAX VCE(sat) 0.4 0.2 0 1.0 2.0 3.0 50 70 100 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 200 1.0 0.5 VC for VCE(sat) (25C to 125C) (-55C to 25C) 0 -0.5 (25C to 125C) -1.0 VB for VBE -1.5 -2.0 0 Figure 5. Saturation Voltage Limits 40 (-55C to 25C) 80 120 160 IC, COLLECTOR CURRENT (mA) Figure 6. Temperature Coefficients http://onsemi.com 803 200 MPS3646 DYNAMIC CHARACTERISTICS 200 200 VCC = 10 V TJ = 25C 70 100 td @ VEB(off) = 3 V 50 30 t r , RISE TIME (ns) t d, DELAY TIME (ns) 100 2V 20 0V 10 70 VCC = 10 V 50 30 20 VCC = 3 V 10 7.0 5.0 IC/IB = 10 TJ = 25C TJ = 125C 7.0 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 5.0 200 1.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 2.0 Figure 7. Delay Time 200 TJ = 25C TJ = 125C IC/IB = 10 20 10 5.0 1.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 2.0 100 70 50 30 IC/IB = 20 20 IC/IB = 10 10 ts ts - 1/8 tf IB1 = IB2 7.0 VCC = 10 V TJ = 25C TJ = 125C 100 t f , FALL TIME (ns) t s , STORAGE TIME (ns) IC/IB = 20 7.0 5.0 200 1.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 2.0 Figure 9. Storage Time 200 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 1000 MAX TYP 7.0 Cibo 5.0 Cobo 3.0 IC/IB = 10 TJ = 25C TJ = 125C 700 500 Q, CHARGE (pC) CAPACITANCE (pF) 100 Figure 10. Fall Time 10 300 200 QT 100 VCC = 3 V 70 50 VCC = 10 V 30 2.0 200 Figure 8. Rise Time 50 30 100 0.1 0.2 0.5 1.0 2.0 REVERSE BIAS (Vdc) 5.0 20 10 QA VCC = 3 V 1.0 Figure 11. Junction Capacitance 2.0 3.0 Figure 12. Maximum Charge Data http://onsemi.com 804 ON Semiconductor General Purpose Transistor MPS3904 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current -- Continuous IC 100 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Power Dissipation @ TA = 60C PD 450 mW Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watts mW/C -55 to +150 C Operating and Storage Junction Temperature Range TJ, Tstg 1 2 CASE 29-04, STYLE 1 TO-92 (TO-226AA) COLLECTOR 3 2 BASE THERMAL CHARACTERISTICS Characteristic 3 Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W 1 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Min Max Unit Collector-Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 -- Vdc Collector-Base Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO 60 -- Vdc Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO 6.0 -- Vdc Collector Cutoff Current (VCE = 30 Vdc, VEB(off) = 3.0 Vdc) ICEX -- 50 nAdc Base Cutoff Current (VCE = 30 Vdc, VEB(off) = 3.0 Vdc) IBL -- 50 nAdc Characteristic OFF CHARACTERISTICS 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 2 805 Publication Order Number: MPS3904/D MPS3904 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Min Max 40 70 100 60 30 -- -- 300 -- -- -- -- 0.2 0.3 0.65 -- 0.85 1.1 fT 300 -- MHz Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo -- 4.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo -- 8.0 pF Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hie 1.0 10 k Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hre 0.5 8.0 X 10-4 Small-Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe 100 400 -- Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hoe 1.0 40 mhos Noise Figure (IC = 100 Adc, VCE = 5.0 Vdc, RS = 1.0 k, f = 1.0 kHz) NF -- 5.0 dB (VCC = 3.0 Vdc, VBE(off) = -0.5 0.5 Vdc, IC = 10 mAdc, IB1 = 1.0 mAdc) td -- 35 ns tr -- 50 ns (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc) ts -- 900 ns tf -- 90 ns Characteristic ON Unit CHARACTERISTICS(1) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) hFE Collector-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VCE(sat) Base-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VBE(sat) -- Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. EQUIVALENT SWITCHING TIME TEST CIRCUITS +3.0 V 300 ns DUTY CYCLE = 2% +10.9 V 275 10 k -0.5 V <1.0 ns 10 < t1 < 500 s DUTY CYCLE = 2% t1 +3.0 V +10.9 V 0 CS < 4.0 pF* -9.1 V 275 10 k <1.0 ns 1N916 *Total shunt capacitance of test jig and connectors Figure 1. Turn-On Time Figure 2. Turn-Off Time http://onsemi.com 806 CS < 4.0 pF* MPS3904 TYPICAL NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25C) 100 IC = 1.0 mA BANDWIDTH = 1.0 Hz RS = 0 50 300 A 10 7.0 In, NOISE CURRENT (pA) en, NOISE VOLTAGE (nV) 20 100 A 5.0 10 A 3.0 2.0 20 300 A 100 A 10 5.0 2.0 1.0 30 A 0.5 30 A BANDWIDTH = 1.0 Hz RS IC = 1.0 mA 10 A 0.2 10 20 50 100 200 500 1k f, FREQUENCY (Hz) 2k 5k 0.1 10k 10 20 50 Figure 3. Noise Voltage 100 200 500 1k f, FREQUENCY (Hz) 2k 5k 10k Figure 4. Noise Current NOISE FIGURE CONTOURS (VCE = 5.0 Vdc, TA = 25C) 1M 500k BANDWIDTH = 1.0 Hz 200k 100k 50k RS , SOURCE RESISTANCE (OHMS) RS , SOURCE RESISTANCE (OHMS) 500k 200k 100k 50k 20k 10k 5k 2.0 dB 2k 1k 500 200 100 50 BANDWIDTH = 1.0 Hz 3.0 dB 4.0 dB 10 20 30 6.0 dB 50 70 100 200 300 IC, COLLECTOR CURRENT (A) 10 dB 500 700 1k 20k 10k 1.0 dB 5k 2.0 dB 2k 1k 500 200 100 5.0 dB 8.0 dB 10 20 Figure 5. Narrow Band, 100 Hz RS , SOURCE RESISTANCE (OHMS) 500k 30 50 70 100 200 300 IC, COLLECTOR CURRENT (A) 500 700 1k Figure 6. Narrow Band, 1.0 kHz 10 Hz to 15.7 kHz 200k 100k 50k Noise Figure is defined as: 20k 10k 5k 2 2 1 2 S In RS en2 4KTR 4KTRS NF 20 log10 1.0 dB 2k 1k 500 200 100 50 3.0 dB 2.0 dB en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman's Constant (1.38 x 10-23 j/K) T = Temperature of the Source Resistance (K) RS = Source Resistance (Ohms) 3.0 dB 5.0 dB 8.0 dB 10 20 30 50 70 100 200 300 500 700 1k IC, COLLECTOR CURRENT (A) Figure 7. Wideband http://onsemi.com 807 MPS3904 TYPICAL STATIC CHARACTERISTICS h FE, DC CURRENT GAIN 400 TJ = 125C 25C 200 -55C 100 80 MPS3904 VCE = 1.0 V VCE = 10 V 60 40 0.004 0.006 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100 1.0 100 MPS3904 TJ = 25C 0.8 IC = 1.0 mA 0.6 10 mA 50 mA IC, COLLECTOR CURRENT (mA) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 8. DC Current Gain 100 mA 0.4 0.2 0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 5.0 10 TA = 25C PULSE WIDTH = 300 s 80 DUTY CYCLE 2.0% 200 A 40 100 A 20 0 5.0 10 15 20 25 30 35 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) TJ = 25C V, VOLTAGE (VOLTS) 1.2 1.0 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 0 VCE(sat) @ IC/IB = 10 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 40 Figure 10. Collector Characteristics V, TEMPERATURE COEFFICIENTS (mV/C) Figure 9. Collector Saturation Region 1.4 400 A 300 A 60 0 20 IB = 500 A 50 100 1.6 *APPLIES for IC/IB hFE/2 0.8 0 25C to 125C *VC for VCE(sat) -55C to 25C -0.8 25C to 125C -1.6 -2.4 0.1 Figure 11. "On" Voltages VB for VBE 0.2 -55C to 25C 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) Figure 12. Temperature Coefficients http://onsemi.com 808 50 100 MPS3904 TYPICAL DYNAMIC CHARACTERISTICS 100 70 50 700 500 ts 300 200 tr 30 20 td @ VBE(off) = 0.5 Vdc 10 7.0 5.0 3.0 1000 VCC = 3.0 V IC/IB = 10 TJ = 25C t, TIME (ns) t, TIME (ns) 300 200 100 70 50 tf 30 VCC = 3.0 V IC/IB = 10 IB1 = IB2 TJ = 25C 20 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 10 1.0 100 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 500 10 TJ = 25C f = 100 MHz 300 TJ = 25C f = 1.0 MHz 7.0 200 C, CAPACITANCE (pF) VCE = 20 V 5.0 V 100 Cib 5.0 Cob 3.0 2.0 70 50 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 1.0 0.05 50 0.1 0.2 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 15. Current-Gain -- Bandwidth Product Figure 16. Capacitance 20 hie , INPUT IMPEDANCE (k ) 70 100 Figure 14. Turn-Off Time 10 MPS3904 hfe 200 @ IC = 1.0 mA 7.0 5.0 200 VCE = 10 Vdc f = 1.0 kHz TA = 25C hoe, OUTPUT ADMITTANCE ( mhos) f, T CURRENT-GAIN BANDWIDTH PRODUCT (MHz) Figure 13. Turn-On Time 50 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100 100 70 50 10 50 VCE = 10 Vdc f = 1.0 kHz TA = 25C MPS3904 hfe 200 @ IC = 1.0 mA 30 20 10 7.0 5.0 3.0 2.0 0.1 Figure 17. Input Impedance 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) Figure 18. Output Admittance http://onsemi.com 809 20 50 100 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) MPS3904 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 FIGURE 20 0.05 P(pk) 0.02 0.03 0.02 t1 0.01 0.01 0.01 0.02 SINGLE PULSE 0.05 0.1 0.2 0.5 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN-569) ZJA(t) = r(t) RJA TJ(pk) - TA = P(pk) ZJA(t) t2 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k Figure 19. Thermal Response IC, COLLECTOR CURRENT (nA) 104 DESIGN NOTE: USE OF THERMAL RESPONSE DATA 103 VCC = 30 Vdc 102 ICEO 101 ICBO AND 100 ICEX @ VBE(off) = 3.0 Vdc 10-1 10-2 -40 -20 0 +20 +40 +60 +80 +100 +120 +140 +160 TJ, JUNCTION TEMPERATURE (C) Figure 21. IC, COLLECTOR CURRENT (mA) 400 1.0 ms 200 100 60 40 TC = 25C TA = 25C TJ = 150C 10 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 6.0 4.0 2.0 The safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 22 is based upon TJ(pk) = 150C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from the data in Figure 19. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100 s 10 s 1.0 s dc dc 20 4.0 6.0 8.0 10 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) A train of periodical power pulses can be represented by the model as shown in Figure 20. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 19 was calculated for various duty cycles. To find ZJA(t), multiply the value obtained from Figure 19 by the steady state value RJA. Example: The MPS3904 is dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2) Using Figure 19 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore T = r(t) x P(pk) x RJA = 0.22 x 2.0 x 200 = 88C. For more information, see ON Semiconductor Application Note AN569/D, available from the Literature Distribution Center or on our website at www.onsemi.com. 40 Figure 22. http://onsemi.com 810 ON Semiconductor MPS4124 Amplifier Transistor NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCE 25 Vdc Collector-Base Voltage VCB 30 Vdc Emitter-Base Voltage VEB 5.0 Vdc Collector Current -- Continuous IC 200 mAdc Total Power Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Power Dissipation @ TC = 25C Derate above 25C PD 1.5 12 W mW/C TJ, Tstg -55 to +150 C Operating and Storage Junction Temperature Range 1 2 CASE 29-11, STYLE 1 TO-92 (TO-226AA) COLLECTOR 3 THERMAL CHARACTERISTICS Characteristic 3 Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W 2 BASE 1 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Characteristic Min Max 25 -- 30 -- 5.0 -- -- 50 -- 50 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 1.0 mA, IB = 0) V(BR)CEO Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) V(BR)CBO Emitter-Base Breakdown Voltage (IC = 0, IE = 10 A) V(BR)EBO Collector Cutoff Current (VCB = 20 V, IE = 0) ICBO Emitter Cutoff Current (VEB = 3.0 V, IC = 0) IEBO Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 811 Vdc Vdc Vdc nAdc nAdc Publication Order Number: MPS4124/D MPS4124 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Characteristic Min Max 120 60 360 -- -- 0.3 -- 0.95 170 -- -- 4.0 -- 13.5 120 480 -- 5.0 Unit ON CHARACTERISTICS DC Current Gain (IC = 2.0 mA, VCE = 1.0 V) (IC = 50 mA, VCE = 1.0 V) hFE Collector-Emitter Saturation Voltage (IC = 50 mA, IB = 5.0 mA) VCE(sat) Base-Emitter Saturation Voltage (IC = 50 mA, IB = 5.0 mA) VBE(sat) -- Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 10 mA, VCE = 20 V, f = 100 MHz) fT Output Capacitance (VCB = 5.0 V, IE = 0, f = 1.0 MHz) Cob Input Capacitance (VEB = 0.5 V, IC = 0, f = 1.0 MHz) Cib Small-Signal Current Gain (IC = 2.0 mA, VCE = 1.0 V, f = 1.0 kHz) hfe Noise Figure (IC = 100 A, VCE = 5.0 V, RS = 1.0 k, f = 1.0 kHz) NF http://onsemi.com 812 MHz pF pF -- dB ON Semiconductor MPS4126 Amplifier Transistor PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCE -25 Vdc Collector-Base Voltage VCB -25 Vdc Emitter-Base Voltage VEB -4.0 Vdc Collector Current -- Continuous IC -200 mAdc Total Power Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Power Dissipation @ TC = 25C Derate above 25C PD 1.5 12 W mW/C TJ, Tstg -55 to +150 C Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W Operating and Storage Junction Temperature Range 1 2 3 CASE 29-04, STYLE 1 TO-92 (TO-226AA) THERMAL CHARACTERISTICS Characteristic COLLECTOR 3 2 BASE 1 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max -25 -- -25 -- -4.0 -- -- -50 -- -50 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = -1.0 mA, IB = 0) V(BR)CEO Collector-Base Breakdown Voltage (IC = -10 A, IE = 0) V(BR)CBO Emitter-Base Breakdown Voltage (IC = 0, IE = -10 A) V(BR)EBO Collector Cutoff Current (VCB = -20 V, IE = 0) ICBO Emitter Cutoff Current (VEB = -3.0 V, IC = 0) IEBO Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 813 Vdc Vdc Vdc nAdc nAdc Publication Order Number: MPS4126/D MPS4126 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Characteristic Min Max 120 60 360 -- -- -0.4 -- -0.95 170 -- -- 4.5 -- 11.5 120 480 -- 4.0 Unit ON CHARACTERISTICS DC Current Gain (IC = -2.0 mA, VCE = -1.0 V) (IC = -50 mA, VCE = -1.0 V) hFE Collector-Emitter Saturation Voltage (IC = -50 mA, IB = -5.0 mA) VCE(sat) Base-Emitter Saturation Voltage (IC = -50 mA, IB = -5.0 mA) VBE(sat) -- Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = -10 mA, VCE = -20 V, f = 100 MHz) fT Output Capacitance (VCB = -5.0 V, IE = 0, f = 1.0 MHz) Cob Input Capacitance (VEB = -0.5 V, IC = 0, f = 1.0 MHz) Cib Small-Signal Current Gain (IC = -2.0 mA, VCE = 1.0 V, f = 1.0 kHz) hfe Noise Figure (IC = -100 A, VCE = -5.0 V, RS = 1.0 k, f = 1.0 kHz) NF http://onsemi.com 814 MHz pF pF -- dB MPS5172 General Purpose Transistor NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 25 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector Current - Continuous IC 100 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Power Dissipation @ TA = 60C PD 450 mW Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watts mW/C TJ, Tstg -55 to +150 C Operating and Storage Junction Temperature Range COLLECTOR 3 2 BASE 1 EMITTER TO-92 (TO-226) CASE 29-11 STYLE 1 1 2 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W 3 MARKING DIAGRAM MPS 5172 YWW Figure 23. Y = Year WW = Work Week ORDERING INFORMATION Device MPS5172 Semiconductor Components Industries, LLC, 2001 October, 2001 - Rev. 0 815 Package Shipping TO-92 Bulk Publication Order Number: MPS5172/D MPS5172 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)CEO 25 - Vdc Collector Cutoff Current (VCE = 25 V, IB = 0) ICES - 100 nAdc Collector Cutoff Current (VCB = 25 V, IE = 0) (VCB = 25 V, IE = 0, TA = 100C) ICBO - - 100 10 nAdc Adc Emitter Cutoff Current (VEB = 5.0 V, IC = 0) IEBO - 100 nAdc hFE 100 500 - Collector-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) VCE(sat) - 0.25 Vdc Base-Emitter On Voltage (IC = 10 mAdc, VCE = 10 V) VBE(on) 0.5 1.25 Vdc Collector-Base Capacitance (VCB = 10 V, f = 1.0 MHz) Ccb 1.6 10 pF Small-Signal Current Gain (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe 100 750 - OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Note 1.) (IC = 10 mA, IB = 0) ON CHARACTERISTICS (Note 1.) DC Current Gain (VCE = 10 V, IC = 10 mA) SMALL-SIGNAL CHARACTERISTICS 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. http://onsemi.com 816 MPS5172 TYPICAL STATIC CHARACTERISTICS h FE, DC CURRENT GAIN 400 TJ = 125C 25C 200 -55C 100 80 60 VCE = 1.0 V VCE = 10 V 40 0.004 0.006 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100 1.0 100 TJ = 25C IC, COLLECTOR CURRENT (mA) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain 0.8 IC = 1.0 mA 0.6 10 mA 50 mA 100 mA 0.4 0.2 0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 5.0 10 TA = 25C PULSE WIDTH = 300 s 80 DUTY CYCLE 2.0% 200 A 40 100 A 20 0 5.0 10 15 20 25 30 35 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) TJ = 25C V, VOLTAGE (VOLTS) 1.2 1.0 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 0 VCE(sat) @ IC/IB = 10 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 40 Figure 3. Collector Characteristics V, TEMPERATURE COEFFICIENTS (mV/C) Figure 2. Collector Saturation Region 1.4 400 A 300 A 60 0 20 IB = 500 A 50 100 1.6 *APPLIES for IC/IB hFE/2 0.8 0 25C to 125C *VC for VCE(sat) -55C to 25C -0.8 25C to 125C -1.6 -2.4 0.1 Figure 4. "On" Voltages VB for VBE 0.2 -55C to 25C 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) Figure 5. Temperature Coefficients http://onsemi.com 817 50 100 MPS5172 500 300 10 TJ = 25C f = 100 MHz TJ = 25C f = 1.0 MHz 7.0 VCE = 20 V 200 C, CAPACITANCE (pF) f, T CURRENT-GAIN BANDWIDTH PRODUCT (MHz) TYPICAL DYNAMIC CHARACTERISTICS 5.0 V 100 Cib 5.0 Cob 3.0 2.0 70 50 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 1.0 0.05 50 0.1 0.2 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 6. Current-Gain - Bandwidth Product Figure 7. Capacitance http://onsemi.com 818 10 20 50 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) MPS5172 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 FIGURE 9 0.05 P(pk) 0.02 0.03 0.02 t1 0.01 0.01 0.01 0.02 SINGLE PULSE 0.05 0.1 0.2 0.5 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN-569) ZJA(t) = r(t) RJA TJ(pk) - TA = P(pk) ZJA(t) t2 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k Figure 8. Thermal Response IC, COLLECTOR CURRENT (nA) 104 DESIGN NOTE: USE OF THERMAL RESPONSE DATA 103 VCC = 30 Vdc 102 ICEO 101 ICBO AND 100 ICEX @ VBE(off) = 3.0 Vdc 10-1 10-2 -40 -20 0 +20 +40 +60 +80 +100 +120 +140 +160 TJ, JUNCTION TEMPERATURE (C) Figure 10. IC, COLLECTOR CURRENT (mA) 400 1.0 ms 200 100 60 40 TC = 25C TA = 25C TJ = 150C 10 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 6.0 4.0 2.0 The safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 11 is based upon TJ(pk) = 150C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from the data in Figure 8. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100 s 10 s 1.0 s dc dc 20 4.0 6.0 8.0 10 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) A train of periodical power pulses can be represented by the model as shown in Figure 9. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 8 was calculated for various duty cycles. To find ZJA(t), multiply the value obtained from Figure 8 by the steady state value RJA. Example: The MPS3904 is dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2) Using Figure 8 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore T = r(t) x P(pk) x RJA = 0.22 x 2.0 x 200 = 88C. For more information, see ON Semiconductor Application Note AN569/D, available from the Literature Distribution Center or on our website at www.onsemi.com. 40 Figure 11. http://onsemi.com 819 ON Semiconductor High Frequency Transistor MPS5179 NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 12 Vdc Collector-Base Voltage VCBO 20 Vdc Emitter-Base Voltage VEBO 2.5 Vdc Collector Current -- Continuous IC 50 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 200 1.14 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 300 1.71 mW mW/C Storage Temperature Range Tstg -55 to +150 C 1 2 3 CASE 29-11, STYLE 1 TO-92 (TO-226AA) COLLECTOR 3 2 BASE 1 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Min Max Unit Collector-Emitter Sustaining Voltage (IC = 3.0 mAdc, IB = 0) VCEO(sus) 12 -- Vdc Collector-Base Breakdown Voltage (IC = 0.001 mAdc, IE = 0) V(BR)CBO 20 -- Vdc Emitter-Base Breakdown Voltage (IE = 0.01 mAdc, IC = 0) V(BR)EBO 2.5 -- Vdc -- -- 0.02 1.0 hFE 25 250 -- Collector-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) VCE(sat) -- 0.4 Vdc Base-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) VBE(sat) -- 1.0 Vdc Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCB = 15 Vdc, IE = 0) (VCB = 15 Vdc, IE = 0, TA = 150C) Adc ICBO ON CHARACTERISTICS DC Current Gain (IC = 3.0 mAdc, VCE = 1.0 Vdc) Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 June, 2001 - Rev. 2 820 Publication Order Number: MPS5179/D MPS5179 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Min Max Unit fT 900 2000 MHz Collector-Base Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 to 1.0 MHz) Ccb -- 1.0 pF Small Signal Current Gain (IC = 2.0 mAdc, VCE = 6.0 Vdc, f = 1.0 kHz) hfe 25 300 -- Characteristic SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product(1) (IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 100 MHz) 1. fT is defined as the frequency at which |hfe| extrapolates to unity. http://onsemi.com 821 ON Semiconductor NPN MPS650 MPS651 * PNP MPS750 MPS751 * Amplifier Transistors COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE NPN PNP 1 EMITTER 1 EMITTER Voltage and current are negative for PNP transistors MAXIMUM RATINGS *ON Semiconductor Preferred Devices Symbol MPS650 MPS750 MPS651 MPS751 Unit Collector-Emitter Voltage VCE 40 60 Vdc Collector-Base Voltage VCB 60 80 Vdc Emitter-Base Voltage VEB 5.0 Vdc Collector Current -- Continuous IC 2.0 Adc Total Power Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Power Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watt mW/C TJ, Tstg -55 to +150 C Rating Operating and Storage Junction Temperature Range 1 2 3 CASE 29-10, STYLE 1 TO-92 (TO-226AL) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max 40 60 -- -- 60 80 -- -- 5.0 -- -- -- 0.1 0.1 -- 0.1 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0 ) V(BR)CEO MPS650, MPS750 MPS651, MPS751 V(BR)CBO MPS650, MPS750 MPS651, MPS751 Emitter-Base Breakdown Voltage (IC = 0, IE = 10 Adc) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) Vdc V(BR)EBO Vdc Adc ICBO MPS650, MPS750 MPS651, MPS751 Emitter Cutoff Current (VEB = 4.0 V, IC = 0) IEBO Vdc Adc 1. Pulse Test: Pulse Width 300 s, Duty Cycle = 2.0%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 822 Publication Order Number: MPS650/D NPN MPS650 MPS651 PNP MPS750 MPS751 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max 75 75 75 40 -- -- -- -- -- -- 0.5 0.3 Unit ON CHARACTERISTICS(1) DC Current Gain (IC = 50 mA, VCE = 2.0 V) (IC = 500 mA, VCE = 2.0 V) (IC = 1.0 A, VCE = 2.0 V) (IC = 2.0 A, VCE = 2.0 V) hFE -- Collector-Emitter Saturation Voltage (IC = 2.0 A, IB = 200 mA) (IC = 1.0 A, IB = 100 mA) VCE(sat) Vdc Base-Emitter On Voltage (IC = 1.0 A, VCE = 2.0 V) VBE(on) -- 1.0 Vdc Base-Emitter Saturation Voltage (IC = 1.0 A, IB = 100 mA) VBE(sat) -- 1.2 Vdc fT 75 -- MHz SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product(2) (IC = 50 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width 300 s, Duty Cycle = 2.0%. 2. fT is defined as the frequency at which |hfe| extrapolates to unity. Figure 12. http://onsemi.com 823 NPN MPS650 MPS651 PNP MPS750 MPS751 NPN PNP 300 250 240 225 VCE = 2.0 V TJ = 125C hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 270 210 180 25C 150 120 -55C 90 TJ = 125C 60 30 200 175 25C 150 125 100 -55C 75 50 25 0 10 20 50 0 -10 -20 100 200 500 1.0 A 2.0 A 4.0 A IC, COLLECTOR CURRENT (mA) Figure 1. MPS650, MPS651 Typical DC Current Gain -1.6 1.4 -1.4 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) -1.8 1.6 1.2 VBE(sat) @ IC/IB = 10 0.8 VBE(on) @ VCE = 2.0 V 0.6 PNP -2.0 1.8 1.0 -50 -100 -200 -500 -1.0 A -2.0 A -4.0 A IC, COLLECTOR CURRENT (mA) Figure 2. MPS750, MPS751 Typical DC Current Gain NPN 2.0 0.4 -1.2 VBE(sat) @ IC/IB = 10 -1.0 -0.8 VBE(on) @ VCE = 2.0 V -0.6 -0.4 VCE(sat) @ IC/IB = 10 0.2 0 VCE = -2.0 V 50 100 200 500 1.0 A IC, COLLECTOR CURRENT (mA) VCE(sat) @ IC/IB = 10 -0.2 2.0 A 4.0 A 0 -50 Figure 3. MPS650, MPS651 On Voltages -100 -200 -500 -1.0 A IC, COLLECTOR CURRENT (mA) Figure 4. MPS750, MPS751 On Voltages http://onsemi.com 824 -2.0 A -4.0 A NPN 1.0 -0.9 0.9 0.8 -0.7 -0.6 0.6 -0.5 0.5 0.3 IC = 10 mA IC = 100 mA IC = 500 mA -0.4 IC = 2.0 A -0.2 -0.1 0.1 0 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IB, BASE CURRENT (mA) 50 100 200 500 NPN IC, COLLECTOR CURRENT 0.5 0.01 1.0 -50 -100 -200 -500 PNP -10 1.0 ms 1.0 0.02 IC = -100 mA -4.0 2.0 0.05 IC = -2.0 A Figure 6. MPS750, MPS751 Collector Saturation Region 4.0 0.1 IC = -10 mA 0 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 IB, BASE CURRENT (mA) Figure 5. MPS650, MPS651 Collector Saturation Region 10 IC = -500 mA -0.3 0.2 0.2 TJ = 25C -0.8 TJ = 25C 0.7 0.4 PNP -1.0 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) NPN MPS650 MPS651 PNP MPS750 MPS751 TA = 25C 100 s -2.0 1.0 ms -1.0 MPS65 0 MPS65 1 -0.5 -0.2 TC = 25C -0.1 -0.05 WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 2.0 5.0 10 20 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) -0.02 -0.01 -1.0 100 Figure 7. MPS650, MPS651 SOA, Safe Operating Area TA = 25C MPS75 0 MPS75 1 100 s TC = 25C WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT -2.0 -5.0 -10 -20 -50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 8. MPS750, MPS751 SOA, Safe Operating Area http://onsemi.com 825 -100 ON Semiconductor NPN MPS6521* PNP MPS6523 Amplifier Transistors COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE Voltage and current are negative for PNP transistors 1 EMITTER 1 EMITTER MAXIMUM RATINGS *ON Semiconductor Preferred Device Rating Symbol Collector-Emitter Voltage NPN PNP 25 -- -- 25 40 -- -- 25 Unit VCEO MPS6521 MPS6523 Collector-Base Voltage Vdc VCBO MPS6521 MPS6523 Emitter-Base Voltage Vdc VEBO 4.0 Vdc Collector Current -- Continuous IC 100 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watts mW/C TJ, Tstg -55 to +150 C Operating and Storage Junction Temperature Range 1 2 3 CASE 29-11, STYLE 1 TO-92 (TO-226AA) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient (Printed Circuit Board Mounting) RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC = 0.5 mAdc, IB = 0) V(BR)CEO 25 -- Vdc Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO 4.0 -- Vdc -- -- 0.05 0.05 Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 20 Vdc, IE = 0) Adc ICBO MPS6521 MPS6523 Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 826 Publication Order Number: MPS6521/D NPN MPS6521 PNP MPS6523 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Characteristic Min Max Unit ON CHARACTERISTICS DC Current Gain (IC = 100 Adc, VCE = 10 Vdc) MPS6521 hFE 150 -- (IC = 2.0 mAdc, VCE = 10 Vdc) MPS6521 300 600 (IC = 100 Adc, VCE = 10 Vdc) MPS6523 150 -- (IC = 2.0 mAdc, VCE = 10 Vdc) MPS6523 300 600 VCE(sat) -- 0.5 Vdc Cobo -- 3.5 pF NF -- 3.0 dB Collector-Emitter Saturation Voltage (IC = 50 mAdc, IB = 5.0 mAdc) -- SMALL-SIGNAL CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Noise Figure (IC = 10 Adc, VCE = 5.0 Vdc, RS = 10 k , Power Bandwidth = 15.7 kHz, 3.0 dB points @ 10 Hz and 10 kHz) http://onsemi.com 827 NPN MPS6521 PNP MPS6523 NPN MPS6521 EQUIVALENT SWITCHING TIME TEST CIRCUITS +3.0 V 300 ns DUTY CYCLE = 2% +10.9 V 275 10 k 10 < t1 < 500 s DUTY CYCLE = 2% +3.0 V t1 +10.9 V 0 -0.5 V <1.0 ns CS < 4.0 pF* 275 10 k -9.1 V CS < 4.0 pF* 1N916 <1.0 ns *Total shunt capacitance of test jig and connectors Figure 1. Turn-On Time Figure 2. Turn-Off Time TYPICAL NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25C) 100 IC = 1.0 mA BANDWIDTH = 1.0 Hz RS = 0 50 300 A 10 7.0 In, NOISE CURRENT (pA) en, NOISE VOLTAGE (nV) 20 100 A 5.0 10 A 3.0 2.0 20 300 A 100 A 10 5.0 2.0 1.0 30 A 0.5 30 A 10 A 0.2 10 20 50 100 200 500 1k f, FREQUENCY (Hz) 2k 5k 10k BANDWIDTH = 1.0 Hz RS IC = 1.0 mA 0.1 10 Figure 3. Noise Voltage 20 50 100 200 500 1k f, FREQUENCY (Hz) Figure 4. Noise Current http://onsemi.com 828 2k 5k 10k NPN MPS6521 PNP MPS6523 NPN MPS6521 NOISE FIGURE CONTOURS (VCE = 5.0 Vdc, TA = 25C) 1M 500k BANDWIDTH = 1.0 Hz 200k 100k 50k BANDWIDTH = 1.0 Hz 200k 100k 50k 20k 10k 5k 2.0 dB 2k 1k 500 200 100 50 RS , SOURCE RESISTANCE (OHMS) RS , SOURCE RESISTANCE (OHMS) 500k 3.0 dB 4.0 dB 10 20 30 6.0 dB 50 70 100 200 300 IC, COLLECTOR CURRENT (A) 10 dB 500 700 20k 10k 2.0 dB 2k 1k 500 200 100 1k 1.0 dB 5k 5.0 dB 8.0 dB 10 20 Figure 5. Narrow Band, 100 Hz RS , SOURCE RESISTANCE (OHMS) 500k 30 50 70 100 200 300 IC, COLLECTOR CURRENT (A) 500 700 1k Figure 6. Narrow Band, 1.0 kHz 10 Hz to 15.7 kHz 200k 100k 50k Noise Figure is defined as: 20k 10k 5k NF 20 log10 1.0 dB 2k 1k 500 200 100 50 3.0 dB 2.0 dB en In K T RS 3.0 dB 5.0 dB 8.0 dB 10 20 30 50 70 100 200 300 500 700 = Noise Voltage of the Transistor referred to the input. (Figure 3) = Noise Current of the Transistor referred to the input. (Figure 4) = Boltzman's Constant (1.38 x 10-23 j/K) = Temperature of the Source Resistance (K) = Source Resistance (Ohms) 1k IC, COLLECTOR CURRENT (A) Figure 7. Wideband http://onsemi.com 829 2 2 1 2 S In RS en2 4KTR 4KTRS NPN MPS6521 PNP MPS6523 NPN MPS6521 TYPICAL STATIC CHARACTERISTICS h FE, DC CURRENT GAIN 400 TJ = 125C 25C 200 -55C 100 80 60 VCE = 1.0 V VCE = 10 V 40 0.004 0.006 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100 1.0 100 TJ = 25C IC, COLLECTOR CURRENT (mA) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 8. DC Current Gain 0.8 IC = 1.0 mA 0.6 10 mA 50 mA 100 mA 0.4 0.2 0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 5.0 10 TA = 25C PULSE WIDTH = 300 s 80 DUTY CYCLE 2.0% 200 A 40 100 A 20 0 5.0 10 15 20 25 30 35 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) TJ = 25C V, VOLTAGE (VOLTS) 1.2 1.0 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 0 VCE(sat) @ IC/IB = 10 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 40 Figure 10. Collector Characteristics V, TEMPERATURE COEFFICIENTS (mV/C) Figure 9. Collector Saturation Region 1.4 400 A 300 A 60 0 20 IB = 500 A 50 100 1.6 *APPLIES for IC/IB hFE/2 0.8 0 25C to 125C *VC for VCE(sat) -55C to 25C -0.8 25C to 125C -1.6 -2.4 0.1 Figure 11. "On" Voltages VB for VBE 0.2 -55C to 25C 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) Figure 12. Temperature Coefficients http://onsemi.com 830 50 100 NPN MPS6521 PNP MPS6523 NPN MPS6521 TYPICAL DYNAMIC CHARACTERISTICS 1000 VCC = 3.0 V IC/IB = 10 TJ = 25C 100 70 50 700 500 ts 300 200 t, TIME (ns) t, TIME (ns) 300 200 tr 30 20 td @ VBE(off) = 0.5 Vdc 10 7.0 5.0 100 70 50 tf 30 VCC = 3.0 V IC/IB = 10 IB1 = IB2 TJ = 25C 20 3.0 1.0 2.0 50 70 20 30 5.0 7.0 10 3.0 IC, COLLECTOR CURRENT (mA) 10 1.0 100 2.0 3.0 500 70 100 10 TJ = 25C f = 100 MHz 300 TJ = 25C f = 1.0 MHz 7.0 200 C, CAPACITANCE (pF) VCE = 20 V 5.0 V 100 Cib 5.0 Cob 3.0 2.0 70 50 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 1.0 0.05 50 0.1 0.2 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 15. Current-Gain -- Bandwidth Product Figure 16. Capacitance 20 hie , INPUT IMPEDANCE (k ) 50 Figure 14. Turn-Off Time 10 hfe 200 @ IC = 1.0 mA 7.0 5.0 200 VCE = 10 Vdc f = 1.0 kHz TA = 25C hoe, OUTPUT ADMITTANCE ( mhos) f, T CURRENT-GAIN BANDWIDTH PRODUCT (MHz) Figure 13. Turn-On Time 20 30 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 100 70 50 10 50 VCE = 10 Vdc f = 1.0 kHz TA = 25C hfe 200 @ IC = 1.0 mA 30 20 10 7.0 5.0 3.0 2.0 0.1 Figure 17. Input Impedance 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) Figure 18. Output Admittance http://onsemi.com 831 20 50 100 NPN MPS6521 PNP MPS6523 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) NPN MPS6521 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 FIGURE 20 0.05 P(pk) 0.02 0.03 0.02 t1 0.01 0.01 0.01 0.02 SINGLE PULSE 0.05 0.1 0.2 0.5 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN-569) ZJA(t) = r(t) RJA TJ(pk) - TA = P(pk) ZJA(t) t2 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k Figure 19. Thermal Response IC, COLLECTOR CURRENT (nA) 104 DESIGN NOTE: USE OF THERMAL RESPONSE DATA 103 VCC = 30 Vdc 102 ICEO 101 ICBO AND 100 ICEX @ VBE(off) = 3.0 Vdc 10-1 10-2 -40 -20 0 +20 +40 +60 +80 +100 +120 +140 +160 TJ, JUNCTION TEMPERATURE (C) Figure 21. IC, COLLECTOR CURRENT (mA) 400 1.0 ms 200 100 60 40 TC = 25C TA = 25C TJ = 150C 10 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 6.0 2.0 The safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 22 is based upon TJ(pk) = 150C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from the data in Figure 19. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 10 s 1.0 s dc dc 20 4.0 100 s 4.0 6.0 8.0 10 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) A train of periodical power pulses can be represented by the model as shown in Figure 20. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 19 was calculated for various duty cycles. To find ZJA(t), multiply the value obtained from Figure 19 by the steady state value RJA. Example: The MPS6521 is dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2) Using Figure 19 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore T = r(t) x P(pk) x RJA = 0.22 x 2.0 x 200 = 88C. For more information, see ON Semiconductor Application Note AN569/D, available from the Literature Distribution Center or on our website at www.onsemi.com. 40 Figure 22. http://onsemi.com 832 NPN MPS6521 PNP MPS6523 PNP MPS6523 TYPICAL NOISE CHARACTERISTICS (VCE = -5.0 Vdc, TA = 25C) 10 7.0 IC = 10 A 5.0 In, NOISE CURRENT (pA) en, NOISE VOLTAGE (nV) 1.0 7.0 5.0 BANDWIDTH = 1.0 Hz RS 0 30 A 3.0 100 A 300 A 1.0 mA 2.0 IC = 1.0 mA 3.0 2.0 300 A 1.0 0.7 0.5 100 A 0.3 30 A 0.2 1.0 10 20 50 100 200 500 1.0k f, FREQUENCY (Hz) 2.0k 5.0k 0.1 10k BANDWIDTH = 1.0 Hz RS 10 A 10 20 50 Figure 23. Noise Voltage 100 200 500 1.0k 2.0k f, FREQUENCY (Hz) 5.0k 10k Figure 24. Noise Current (VCE = -5.0 Vdc, TA = 25C) 1.0M 500k BANDWIDTH = 1.0 Hz BANDWIDTH = 1.0 Hz 200k 100k 50k 200k 100k 50k 20k 10k 0.5 dB 5.0k 1.0 dB 2.0k 1.0k 500 200 100 1.0M 500k RS , SOURCE RESISTANCE (OHMS) RS , SOURCE RESISTANCE (OHMS) NOISE FIGURE CONTOURS 2.0 dB 3.0 dB 5.0 dB 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (A) 500 700 1.0k 20k 10k 0.5 dB 5.0k 1.0 dB 2.0k 1.0k 500 200 100 2.0 dB 3.0 dB 5.0 dB 10 RS , SOURCE RESISTANCE (OHMS) Figure 25. Narrow Band, 100 Hz 1.0M 500k 30 50 70 100 200 300 IC, COLLECTOR CURRENT (A) 500 700 1.0k Figure 26. Narrow Band, 1.0 kHz 10 Hz to 15.7 kHz 200k 100k 50k Noise Figure is Defined as: NF 20 log10 20k 10k 2.0k 1.0k 500 1.0 dB 2.0 dB 3.0 dB 5.0 dB 10 20 30 50 70 100 200 300 2 2 1 2 S In RS en2 4KTR 4KTRS en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman's Constant (1.38 x 10-23 j/K) T = Temperature of the Source Resistance (K) RS = Source Resistance (Ohms) 0.5 dB 5.0k 200 100 20 500 700 1.0k IC, COLLECTOR CURRENT (A) Figure 27. Wideband http://onsemi.com 833 NPN MPS6521 PNP MPS6523 PNP MPS6523 TYPICAL STATIC CHARACTERISTICS h FE, DC CURRENT GAIN 400 TJ = 125C 25C 200 -55C 100 80 60 40 0.003 0.005 VCE = 1.0 V VCE = 10 V 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100 1.0 100 TA = 25C IC, COLLECTOR CURRENT (mA) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 28. DC Current Gain 0.8 IC = 1.0 mA 0.6 10 mA 50 mA 100 mA 0.4 0.2 0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 5.0 10 TA = 25C PULSE WIDTH = 300 s 80 DUTY CYCLE 2.0% 300 A 150 A 40 100 A 20 50 A 0 5.0 10 15 20 25 30 35 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) V, TEMPERATURE COEFFICIENTS (mV/C) V, VOLTAGE (VOLTS) 1.0 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 0 VCE(sat) @ IC/IB = 10 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 40 Figure 30. Collector Characteristics TJ = 25C 1.2 250 A 200 A Figure 29. Collector Saturation Region 1.4 350 A 60 0 20 IB = 400 A 100 1.6 *APPLIES for IC/IB hFE/2 0.8 0 *VC for VCE(sat) 25C to 125C -55C to 25C 0.8 25C to 125C 1.6 2.4 0.1 Figure 31. "On" Voltages VB for VBE 0.2 -55C to 25C 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) Figure 32. Temperature Coefficients http://onsemi.com 834 50 100 NPN MPS6521 PNP MPS6523 PNP MPS6523 TYPICAL DYNAMIC CHARACTERISTICS 500 300 200 200 100 70 50 30 tr 20 10 7.0 5.0 1.0 3.0 tf 30 td @ VBE(off) = 0.5 V 2.0 100 70 50 20 50 70 20 30 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 10 -1.0 100 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) -50 -70 -100 Figure 34. Turn-Off Time 500 10 TJ = 25C C, CAPACITANCE (pF) VCE = 20 V 300 5.0 V 200 TJ = 25C 7.0 100 Cib 5.0 3.0 2.0 Cob 70 50 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 1.0 0.05 50 0.1 0.2 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 35. Current-Gain -- Bandwidth Product Figure 36. Capacitance 20 10 MPS6521 hfe 200 @ IC = -1.0 mA 7.0 5.0 3.0 2.0 200 VCE = -10 Vdc f = 1.0 kHz TA = 25C hoe, OUTPUT ADMITTANCE ( mhos) f, T CURRENT-GAIN BANDWIDTH PRODUCT (MHz) Figure 33. Turn-On Time hie , INPUT IMPEDANCE (k ) VCC = -3.0 V IC/IB = 10 IB1 = IB2 TJ = 25C ts 300 t, TIME (ns) t, TIME (ns) 1000 700 500 VCC = 3.0 V IC/IB = 10 TJ = 25C MPS6523 hfe 100 @ IC = -1.0 mA 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 100 70 50 10 50 VCE = 10 Vdc f = 1.0 kHz TA = 25C 30 20 MPS6521 hfe 200 @ IC = 1.0 mA 10 7.0 5.0 MPS6523 hfe 100 @ IC = 1.0 mA 3.0 2.0 0.1 Figure 37. Input Impedance 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) Figure 38. Output Admittance http://onsemi.com 835 20 50 100 NPN MPS6521 PNP MPS6523 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) PNP MPS6523 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 FIGURE 40 0.05 P(pk) 0.02 0.03 0.02 t1 0.01 0.01 0.01 0.02 SINGLE PULSE 0.05 0.1 0.2 0.5 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN-569) ZJA(t) = r(t) RJA TJ(pk) - TA = P(pk) ZJA(t) t2 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k Figure 39. Thermal Response IC, COLLECTOR CURRENT (nA) 104 DESIGN NOTE: USE OF THERMAL RESPONSE DATA 103 VCC = 30 Vdc 102 ICEO 101 ICBO AND 100 ICEX @ VBE(off) = 3.0 Vdc 10-1 10-2 -40 -20 0 +20 +40 +60 +80 +100 +120 +140 +160 TJ, JUNCTION TEMPERATURE (C) Figure 41. IC, COLLECTOR CURRENT (mA) 400 1.0 ms 200 100 60 40 TC = 25C TA = 25C TJ = 150C 10 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 4.0 2.0 The safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 42 is based upon TJ(pk) = 150C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from the data in Figure 39. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 10 s 1.0 s dc dc 20 6.0 100 s 4.0 6.0 8.0 10 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) A train of periodical power pulses can be represented by the model as shown in Figure 40. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 39 was calculated for various duty cycles. To find ZJA(t), multiply the value obtained from Figure 39 by the steady state value RJA. Example: The MPS6523 is dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2) Using Figure 39 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore T = r(t) x P(pk) x RJA = 0.22 x 2.0 x 200 = 88C. For more information, see ON Semiconductor Application Note AN569/D, available from the Literature Distribution Center or on our website at www.onsemi.com. 40 Figure 42. http://onsemi.com 836 ON Semiconductor Amplifier Transistors MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value Unit VCEO Vdc MPS6601/6651 MPS6602/6652 25 40 Collector-Base Voltage VCBO Vdc MPS6601/6651 MPS6602/6652 25 30 Emitter-Base Voltage Voltage and current are negative for PNP transistors VEBO 4.0 Vdc Collector Current -- Continuous IC 1000 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watts mW/C TJ, Tstg -55 to +150 C Symbol Max Unit RJA(1) 200 C/W RJC 83.3 C/W Operating and Storage Junction Temperature Range NPN MPS6601 MPS6602* PNP MPS6651 MPS6652* *ON Semiconductor Preferred Device THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case 1 2 3 CASE 29-11, STYLE 1 TO-92 (TO-226AA) 1. RJA is measured with the device soldered into a typical printed circuit board. COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE NPN PNP 1 EMITTER 1 EMITTER Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 2 837 Publication Order Number: MPS6601/D NPN MPS6601 MPS6602 PNP MPS6651 MPS6652 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max 25 40 -- -- 25 40 -- -- 4.0 -- -- -- 0.1 0.1 -- -- 0.1 0.1 50 50 30 -- -- -- Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO MPS6601/6651 MPS6602/6652 Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0) Vdc V(BR)CBO MPS6601/6651 MPS6602/6652 Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO Collector Cutoff Current (VCE = 25 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0) MPS6601/6651 MPS6602/6652 Collector Cutoff Current (VCB = 25 Vdc, IE = 0) (VCB = 30 Vdc, IE = 0) MPS6601/6651 MPS6602/6652 Vdc Vdc Adc ICES Adc ICBO ON CHARACTERISTICS DC Current Gain (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 1.0 Vdc) (IC = 1000 mAdc, VCE = 1.0 Vdc) hFE -- Collector-Emitter Saturation Voltage (IC = 1000 mAdc, IB = 100 mAdc) VCE(sat) -- 0.6 Vdc Base-Emitter On Voltage (IC = 500 mAdc, VCE = 1.0 Vdc) VBE(on) -- 1.2 Vdc fT 100 -- MHz Cobo -- 30 pF td -- 25 ns tr -- 30 ns ts -- 250 ns tf -- 50 ns SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 50 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time (VCC = 40 Vdc, IC = 500 mAdc, IB1 = 50 mAdc, mAdc tp 300 ns Duty Cycle) Fall Time http://onsemi.com 838 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE NPN MPS6601 MPS6602 PNP MPS6651 MPS6652 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.05 0.07 0.02 0.05 P(pk) SINGLE PULSE t1 0.01 SINGLE PULSE 0.03 t2 0.02 0.01 0.001 RJC(t) = (t) JC RJC = 100C/W MAX RJA(t)d = r(t) JA RJA = 357C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) JC(t) DUTY CYCLE, D = t1/t2 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (SECONDS) Figure 1. Thermal Response TURN-ON TIME VCC -1.0 V 5.0 s +10 V 0 100 RL 100 OUTPUT 100 100 5.0 s tr = 3.0 ns *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities Figure 2. Switching Time Test Circuits 839 RL OUTPUT * CS 6.0 pF 5.0 F http://onsemi.com +40 V RB Vin * CS 6.0 pF 5.0 F VCC +VBB +40 V RB Vin tr = 3.0 ns TURN-OFF TIME 100 NPN MPS6601 MPS6602 PNP MPS6651 MPS6652 NPN PNP 300 200 70 VCE = 1.0 V TJ = 25C 50 30 f T , CURRENT GAIN BANDWIDTH PRODUCT (MHz) h FE , CURRENT GAIN 100 10 100 1000 70 VCE = 10 V TJ = 25C f = 30 MHz 10 100 200 1000 -1000 300 200 100 70 50 VCE = -10 V TJ = 25C f = 30 MHz 30 -10 -100 -200 -1000 Figure 5. Current Gain Bandwidth Product Figure 6. Current Gain Bandwidth Product TJ = 25C -1.0 VBE(SAT) @ IC/IB = 10 -0.8 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) -100 IC, COLLECTOR CURRENT (mA) VBE(ON) @ VCE = 1.0 V 0.6 0.4 0 1.0 20 -10 IC, COLLECTOR CURRENT (mA) 0.8 0.2 VCE = -1.0 V TJ = 25C Figure 4. MPS6651/6652 DC Current Gain 100 1.0 50 Figure 3. MPS6601/6602 DC Current Gain 200 30 70 IC, COLLECTOR CURRENT (mA) 300 50 100 IC, COLLECTOR CURRENT (mA) f T , CURRENT GAIN BANDWIDTH PRODUCT (MHz) h FE , CURRENT GAIN 200 100 0 -1.0 1000 VBE(SAT) @ IC/IB = 10 VBE(ON) @ VCE = -1.0 V -0.4 -0.2 VCE(SAT) @ IC/IB = 10 10 -0.6 TJ = 25C VCE(SAT) @ IC/IB = 10 -10 -100 -1000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. On Voltages Figure 8. On Voltages http://onsemi.com 840 NPN MPS6601 MPS6602 PNP MPS6651 MPS6652 NPN PNP 160 TJ = 25C 60 40 C, CAPACITANCE (pF) C, CAPACITANCE (pF) 80 Cib 20 Cob 0 Cob Cib 5.0 1.0 10 15 20 2.0 3.0 4.0 VR, REVERSE VOLTAGE (VOLTS) 120 80 Cib 40 0 25 5.0 TJ = 25C Cob Cob Cib -5.0 -1.0 Figure 9. Capacitance VCE = 5.0 V f = 1.0 kHz TA = 25C 6.0 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 10 8.0 IC = 100 A 4.0 2.0 10 1k 100 8.0 6.0 IC = 100 A 4.0 0 10 k 100 10 1k 10 k Rs, SOURCE RESISTANCE (OHMS) Rs, SOURCE RESISTANCE (OHMS) Figure 11. MPS6601/6602 Noise Figure Figure 12. MPS6651/6652 Noise Figure 10 k 1k 500 ts 200 td @ VBE(off) = -0.5 V VCC = -40 V IC/IB = 10 IB1 = IB2 TJ = 25C 5k 3k t, TIME (NS) td @ VBE(off) = 0.5 V VCC = 40 V IC/IB = 10 IB1 = IB2 TJ = 25C 5k 3k t, TIME (NS) VCE = -5.0 V f = 1.0 kHz TA = 25C 2.0 10 k 100 1k 500 ts 200 100 50 tf 20 tr 10 -25 -5.0 Figure 10. Capacitance 10 0 -15 -20 -10 -2.0 -3.0 -4.0 VR, REVERSE VOLTAGE (VOLTS) 10 20 50 100 200 tf 50 500 tr td 20 td 1000 10 -10 -20 -50 -100 -200 -500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 13. MPS6601/6602 Switching Times Figure 14. MPS6651/6652 Switching Times http://onsemi.com 841 -1000 NPN MPS6601 MPS6602 PNP MPS6651 MPS6652 PNP -0.8 R VB , TEMPERATURE COEFFICIENT (mV/ C) R VB , TEMPERATURE COEFFICIENT (mV/ C) NPN -1.2 -1.6 RVB for VBE -2.0 -2.4 -2.8 1.0 10 100 1000 RVB for VBE -2.0 -2.4 -2.8 -1.0 -10 -100 -1000 IC, COLLECTOR CURRENT (mA) Figure 15. Base-Emitter Temperature Coefficient Figure 16. Base-Emitter Temperature Coefficient 1.0 MS 500 TC = 25C 200 1.0 MS -500 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) -1.6 -1 k TC = 25C -200 1.0 s 100 1.0 s -100 50 MPS6601 MPS6602 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 20 10 1.0 2.0 5.0 10 20 MPS6651 -50 MPS6652 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT -20 -10 40 -1.0 -2.0 -5.0 -10 -40 -20 VCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE Figure 17. Safe Operating Area Figure 18. Safe Operating Area 1.0 -1.0 TJ = 25C VCE , COLLECTOR VOLTAGE (VOLTS) VCE , COLLECTOR VOLTAGE (VOLTS) -1.2 IC, COLLECTOR CURRENT (mA) 1k 0.8 0.6 IC = 1000 mA 0.4 0.2 0 -0.8 IC = 50 mA IC = 10 mA 0.01 0.1 IC = 100 mA IC = 500 mA IC = 250 mA 1.0 10 100 TJ = 25C -0.8 -0.6 IC = -1000 mA -0.4 -0.2 0 -0.01 IC = -10 mA IC = -50 mA -0.1 IC = -100 mA -1.0 IC = -500 mA IC = -250 mA -10 IB, BASE CURRENT (mA) IB, BASE CURRENT (mA) Figure 19. MPS6601/6602 Saturation Region Figure 20. MPS6651/6652 Saturation Region http://onsemi.com 842 -100 MPS6729 Preferred Device One Watt Amplifier Transistor PNP Silicon http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO -80 Vdc Collector-Base Voltage VCBO -80 Vdc Emitter-Base Voltage VEBO -4.0 Vdc Collector Current - Continuous IC -500 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 1.0 8.0 Watt mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 2.5 20 Watts mW/C TJ, Tstg -55 to +150 C Operating and Storage Junction Temperature Range 2 BASE 1 EMITTER TO-92 (TO-226) CASE 29-10 STYLE 1 1 THERMAL CHARACTERISTICS Characteristic 2 3 Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 125 C/W MARKING DIAGRAM Thermal Resistance, Junction to Case RJC 50 C/W MPS 6729 YWW Y = Year WW = Work Week ORDERING INFORMATION Device MPS6729 Package Shipping TO-92 Bulk Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 October, 2001 - Rev. 0 843 Publication Order Number: MPS6729/D MPS6729 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage (Note 1.) (IC = -1.0 mAdc, IB = 0) V(BR)CEO -80 - Vdc Collector-Base Breakdown Voltage (IC = 0.1 mA, IE = 0) V(BR)CBO -80 - Vdc Emitter-Base Breakdown Voltage (IE = -10 Adc, IC = 0) V(BR)EBO -5.0 - Vdc Collector Cutoff Current (VCB = -60 Vdc, IE = 0) ICBO - -0.1 Adc Emitter Cutoff Current (VEB = -5.0 Vdc, IC = 0) IEBO - -10 Adc 80 50 - 250 OFF CHARACTERISTICS ON CHARACTERISTICS (Note 1.) DC Current Gain (IC = -50 mAdc, VCE = -1.0 Vdc) (IC = -250 mAdc, VCE = -1.0 Vdc) hFE - Collector-Emitter Saturation Voltage (IC = -250 mAdc, IB = -10 mAdc) VCE(sat) - -0.5 Vdc Base-Emitter On Voltage (IC = -250 mAdc, VCE = -1.0 Vdc) VBE(on) - -1.2 Vdc Collector-Base Capacitance (VCB = -10 Vdc, f = 1.0 MHz) Ccb - 30 pF Small-Signal Current Gain (IC = 200 mA, VCE = 5.0 V, f = 20 MHz) hfe 2.5 25 SMALL-SIGNAL CHARACTERISTICS 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. http://onsemi.com 844 MPS6729 400 hFE, DC CURRENT GAIN TJ = 125C 200 VCE = -1.0 V 25C -55C 100 80 60 40 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) -50 -70 -100 -200 -300 -500 -1.0 -1.0 TJ = 25C TJ = 25C -0.8 -0.8 -0.6 IC = -10 mA -50 mA -100 mA -250 mA V, VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain -500 mA -0.4 -0.2 VBE(sat) @ IC/IB = 10 -0.6 VBE(on) @ VCE = -1.0 V -0.4 -0.2 VCE(sat) @ IC/IB = 10 0 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 IB, BASE CURRENT (mA) -10 -20 0 -0.5 -1.0 -50 Figure 2. Collector Saturation Region -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) Figure 3. "On" Voltages http://onsemi.com 845 -500 MPS6729 100 VB, TEMPERATURE COEFFICIENT (mV/C) -0.8 70 -1.2 C, CAPACITANCE (pF) 50 -1.6 VB for VBE -2.0 30 20 10 -2.4 Cobo 7.0 -2.8 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) 5.0 -0.1 -500 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Base-Emitter Temperature Coefficient -50 -100 Figure 5. Capacitance 200 VCE = -2.0 V TJ = 25C IC, COLLECTOR CURRENT (mA) f, T CURRENT-GAIN BANDWIDTH PRODUCT (MHz) TJ = 25C Cibo 100 DUTY CYCLE 10% -2 k 1.0 ms -1 k 100 s -500 70 TA = 25C TC = 25C -200 50 -100 30 -50 -20 20 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 IC, COLLECTOR CURRENT (mA) -10 -1.0 -200 Figure 6. Current-Gain - Bandwidth Product dc 1.0 s dc CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT MPSW55 MPSW56 -2.0 -5.0 -10 -20 -60 -80 -100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. Active Region - Safe Operating Area http://onsemi.com 846 ON Semiconductor Amplifier Transistors MAXIMUM RATINGS Symbol MPS8098 MPS8598 MPS8099 MPS8599 Unit Collector-Emitter Voltage VCEO 60 80 Vdc Collector-Base Voltage VCBO 60 80 Vdc Emitter-Base Voltage VEBO 6.0 5.0 Vdc Rating Collector Current - Continuous IC 500 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watts mW/C TJ, Tstg -55 to +150 C NPN MPS8098 MPS8099* PNP MPS8598 MPS8599* Voltage and current are negative for PNP transistors *ON Semiconductor Preferred Device Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W 1 2 3 CASE 29-11, STYLE 1 TO-92 (TO-226AA) COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE NPN PNP 1 EMITTER 1 EMITTER Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 September, 2001 - Rev. 2 847 Publication Order Number: MPS8098/D NPN MPS8098 MPS8099 PNP MPS8598 MPS8599 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max 60 80 -- -- 60 80 -- -- 6.0 5.0 -- -- -- 0.1 -- -- 0.1 0.1 -- -- 0.1 0.1 100 100 75 300 -- -- -- -- 0.4 0.3 0.5 0.6 0.7 0.8 150 -- -- -- 6.0 8.0 -- -- 25 30 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0) Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)CEO MPS8098, MPS8598 MPS8099, MPS8599 Vdc V(BR)CBO MPS8098, MPS8598 MPS8099, MPS8599 Vdc V(BR)EBO MPS8098, MPS8099 MPS8598, MPS8599 Collector Cutoff Current (VCE = 60 Vdc, IB = 0) ICES Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) MPS8098, MPS8598 MPS8099, MPS8599 Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) (VEB = 4.0 Vdc, IC = 0) MPS8098, MPS8099 MPS8598, MPS8599 Vdc Adc Adc ICBO Adc IEBO 1. Pulse Test: Pulse Width 300 s, Duty Cycle = 2.0%. ON CHARACTERISTICS(1) DC Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) hFE Collector-Emitter Saturation Voltage (IC = 100 mAdc, IB = 5.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc) Base-Emitter On Voltage (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) -- VCE(sat) Vdc VBE(on) MPS8098, MPS8598 MPS8099, MPS8599 Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) fT Cobo MPS8098, MPS8099 MPS8598, MPS8599 pF Cibo MPS8098, MPS8099 MPS8598, MPS8599 1. Pulse Test: Pulse Width 300 s, Duty Cycle = 2.0%. http://onsemi.com 848 MHz pF r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE NPN MPS8098 MPS8099 PNP MPS8598 MPS8599 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 D = 0.5 0.2 0.1 0.05 P(pk) 0.01 0.02 SINGLE PULSE t1 SINGLE PULSE 0.03 t2 0.02 0.01 ZJC(t) = r(t) * RJC TJ(pk) - TC = P(pk) ZJC(t) ZJA(t) = r(t) * RJA TJ(pk) - TA = P(pk) ZJA(t) D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN469) DUTY CYCLE, D = t1/t2 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k t, TIME (ms) Figure 1. MPS8098, MPS8099, MPS8598 and MPS8599 Thermal Response TURN-ON TIME -1.0 V 5.0 s 100 +10 V 0 RL 100 OUTPUT 100 100 5.0 s tr = 3.0 ns *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities Figure 2. Switching Time Test Circuits 849 RL OUTPUT * CS 6.0 pF 5.0 F http://onsemi.com +40 V RB Vin * CS 6.0 pF 5.0 F VCC +VBB +40 V RB Vin tr = 3.0 ns TURN-OFF TIME VCC NPN MPS8098 MPS8099 PNP MPS8598 MPS8599 PNP 300 TJ = 25C 200 5.0 V VCE = 1.0 V 100 70 50 30 1.0 2.0 3.0 5.0 7.0 10 20 30 f T , CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) f T , CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) NPN 50 70 100 300 TJ = 25C 200 -5.0 V VCE = -1.0 V 100 70 50 30 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 3. MPS8098/99 Current-Gain -- Bandwidth Product Figure 4. MPS8598/99 Current-Gain -- Bandwidth Product 40 40 25C TTJJ==25C TJ = 25C 20 Cibo 10 8.0 6.0 4.0 1.0 k 700 500 0.2 0.5 1.0 2.0 5.0 10 20 50 6.0 Cobo 100 2.0 -0.1 -0.2 -0.5 -1.0 -5.0 -50 -100 -10 -20 Figure 5. MPS8098/99 Capacitance Figure 6. MPS8598/99 Capacitance 1.0 k 700 500 ts t, TIME (ns) tf 30 200 tf 100 70 50 tr 30 20 20 20 tr td @ VBE(off) = 0.5 V 30 50 70 100 VCC = -40 V IC/IB = 10 IB1 = IB2 TJ = 25C ts 300 100 70 50 10 -2.0 VR, REVERSE VOLTAGE (VOLTS) 200 10 10 8.0 VR, REVERSE VOLTAGE (VOLTS) VCC = 40 V IC/IB = 10 IB1 = IB2 TJ = 25C 300 Cibo 4.0 Cobo 2.0 0.1 t, TIME (ns) C, CAPACITANCE (pF) C, CAPACITANCE (pF) 20 200 10 td @ VBE(off) = -0.5 V -10 -20 -30 -50 -70 -100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. MPS8098/99 Switching Times Figure 8. MPS8598/99 Switching Times http://onsemi.com 850 -200 NPN MPS8098 MPS8099 PNP MPS8598 MPS8599 PNP 1.0 k 700 500 -1.0 k -700 -500 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) NPN 300 -300 200 -200 100 70 50 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 30 20 10 1.0 -100 -70 -50 MPS8098 MPS8099 DUTY CYCLE 10% 2.0 3.0 5.0 7.0 10 20 50 30 -20 -10 70 100 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT MPS8598 DUTY CYCLE 10% MPS8599 -30 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 9. MPS8098/99 Active-Region Safe Operating Area Figure 10. MPS8598/99 Active-Region Safe Operating Area 400 300 TJ = 125C h FE, DC CURRENT GAIN 25C 200 -55C 100 VCE = 5.0 V 80 60 40 0.2 0.3 0.5 1.0 1.0 2.0 3.0 5.0 10 20 30 50 25C 100 70 VCE = -5.0 V 50 30 -0.2 100 200 -55C -0.5 -1.0 -2.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) Figure 11. MPS8098/99 DC Current Gain Figure 12. MPS8598/99 DC Current Gain 1.0 TJ = 25C TJ = 25C 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 5.0 V 0.4 0.2 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 5.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10 0 0.2 -5.0 IC, COLLECTOR CURRENT (mA) 0.8 V, VOLTAGE (VOLTS) 200 V, VOLTAGE (VOLTS) h FE , DC CURRENT GAIN TJ = 125C 0.5 1.0 2.0 5.0 10 20 50 100 200 0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 13. MPS8098/99 "ON" Voltages Figure 14. MPS8598/99 "ON" Voltages http://onsemi.com 851 200 NPN MPS8098 MPS8099 PNP MPS8598 MPS8599 2.0 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) PNP TJ = 25C IC = 50 mA IC = 20 mA 1.6 IC = 200 mA IC = 100 mA 1.2 0.8 0.4 IC = 10 mA 0 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC = 50 mA IC = 20 mA IC = 100 mA IC = 200 mA 1.2 0.8 0.4 TJ = 25C 0 0.05 0.02 0.1 0.2 0.5 1.0 2.0 10 5.0 Figure 16. MPS8598/99 Collector Saturation Region RVB FOR VBE -55C TO 125C -2.2 -2.6 0.2 IC = 10 mA Figure 15. MPS8098/99 Collector Saturation Region -1.4 -3.0 1.6 IB, BASE CURRENT (mA) -1.0 -1.8 2.0 IB, BASE CURRENT (mA) R VB , TEMPERATURE COEFFICIENT (mV/ C) R VB , TEMPERATURE COEFFICIENT (mV/ C) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) NPN 0.5 1.0 2.0 5.0 10 20 50 100 200 -1.0 -1.4 -1.8 RVB FOR VBE -55C TO 125C -2.2 -2.6 -3.0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 17. MPS8098/99 Base-Emitter Temperature Coefficient Figure 18. MPS8598/99 Base-Emitter Temperature Coefficient http://onsemi.com 852 20 200 ON Semiconductor MPS918* MPS3563 Amplifier Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol MPS918 MPS3563 Unit Collector-Emitter Voltage VCEO 15 12 Vdc Collector-Base Voltage VCBO 30 30 Vdc Emitter-Base Voltage VEBO 3.0 2.0 Vdc Collector Current -- Continuous IC 50 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 350 2.8 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 0.85 6.8 Watts mW/C TJ, Tstg -55 to +150 C Operating and Storage Junction Temperature Range 1 2 CASE 29-10, STYLE 1 TO-92 (TO-226AL) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol Max Unit RJA(1) 357 C/W RJC 147 C/W 3 COLLECTOR 3 2 BASE 1 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max 15 12 -- -- 30 30 -- -- 3.0 2.0 -- -- -- -- 10 50 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(2) (IC = 3.0 mAdc, IB = 0) V(BR)CEO MPS918 MPS3563 Collector-Base Breakdown Voltage (IC = 1.0 Adc, IE = 0) (IC = 100 Adc, IE = 0) Vdc V(BR)CBO MPS918 MPS3563 Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) Vdc V(BR)EBO MPS918 MPS3563 Collector Cutoff Current (VCB = 15 Vdc, IE = 0) Vdc ICBO MPS918 MPS3563 nAdc 1. RJA is measured with the device soldered into a typical printed circuit board. 2. Pulse Test: Pulse Width 300 s; Duty Cycle 1.0%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 853 Publication Order Number: MPS918/D MPS918 MPS3563 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Characteristic Min Max Unit 20 20 -- 200 VCE(sat) -- 0.4 Vdc VBE(sat) -- 1.0 Vdc 600 600 -- 1500 -- -- -- 3.0 1.7 1.7 Cibo -- 2.0 pF hfe 20 250 -- NF -- 6.0 dB 15 14 -- -- Pout 30 -- mW 25 -- % ON CHARACTERISTICS DC Current Gain(2) (IC = 3.0 mAdc, VCE = 1.0 Vdc) (IC = 8.0 mAdc, VCE = 10 Vdc) MPS918 MPS3563 Collector-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) MPS918 Base-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) MPS918 hFE -- SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product(2) (IC = 4.0 mAdc, VCE = 10 Vdc, f = 100 MHz) (IC = 8.0 mAdc, VCE = 10 Vdc, f = 100 MHz) MPS918 MPS3563 Output Capacitance (VCB = 0 Vdc, IE = 0, f = 1.0 MHz) (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) MPS918 MPS918 MPS3563 Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) MPS918 Small-Signal Current Gain (IC = 8.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MPS3563 Noise Figure (IC = 1.0 mAdc, VCE = 6.0 Vdc, RS = 400 k, f = 60 MHz) MPS918 fT MHz Cobo pF FUNCTIONAL TEST Common-Emitter Amplifier Power Gain (IC = 6.0 mAdc, VCB = 12 Vdc, f = 200 MHz) (IC = 8.0 mAdc, VCE = 10 Vdc, f = 200 MHz) (Gfd + Gre -20 dB) Gpe MPS918 MPS3563 Power Output (IC = 8.0 mAdc, VCB = 15 Vdc, f = 500 MHz) MPS918 Oscillator Collector Efficiency (IC = 8.0 mAdc, VCB = 15 Vdc, Pout = 30 mW, f = 500 MHz) MPS918 2. Pulse Test: Pulse Width 300 s; Duty Cycle 1.0%. http://onsemi.com 854 dB MPSA05, MPSA06, MPSA55, MPSA56 MPSA06 and MPSA56 are Preferred Devices Amplifier Transistors Voltage and Current are Negative for PNP Transistors http://onsemi.com PNP NPN NPN MPSA05, MPSA06 PNP MPSA55, MPSA56 COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE STYLE 1 MPSA05, MPSA06 MARKING DIAGRAM 1 EMITTER 1 EMITTER TO-92 CASE 29 STYLE 1 STYLE 1 MPSA55, MPSA56 MPS Axxx YWW MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage MPSA05, MPSA55 MPSA06, MPSA56 VCEO Collector-Base Voltage MPSA05, MPSA55 MPSA06, MPSA56 VCBO Emitter-Base Voltage VEBO 4.0 Vdc Collector Current - Continuous IC 500 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watts mW/C -55 to +150 C Operating and Storage Junction Temperature Range Value Unit Vdc 2 3 60 80 TJ, Tstg Device Symbol Max Unit Thermal Resistance, Junction to Ambient RJA (Note 1.) 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W 1. RJA is measured with the device soldered into a typical printed circuit board. = Specific Device Code = 05, 06, 55 or 56 = Year = Work Week ORDERING INFORMATION Vdc 60 80 THERMAL CHARACTERISTICS Characteristic MPSA xxx Y WW 1 Package Shipping MPSA05 TO-92 5000 Units/Box MPSA05RLRA TO-92 2000/Tape & Reel MPSA05RLRM TO-92 2000/Ammo Pack MPSA06 TO-92 5000 Units/Box MPSA06RLRA TO-92 2000/Tape & Reel MPSA06RLRM TO-92 2000/Ammo Pack MPSA06RLRP TO-92 2000/Ammo Pack MPSA55 TO-92 5000 Units/Box MPSA55RLRA TO-92 2000/Tape & Reel MPSA56 TO-92 5000 Units/Box MPSA56RLRA TO-92 2000/Tape & Reel MPSA56RLRM TO-92 2000/Ammo Pack MPSA56RLRP TO-92 2000/Ammo Pack Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 October, 2001 - Rev. 1 855 Publication Order Number: MPSA05/D MPSA05, MPSA06, MPSA55, MPSA56 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit 60 80 - - V(BR)EBO 4.0 - Vdc ICES - 0.1 Adc - - 0.1 0.1 100 100 - - OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Note 2.) (IC = 1.0 mAdc, IB = 0) V(BR)CEO Vdc MPSA05, MPSA55 MPSA06, MPSA56 Emitter-Base Breakdown Voltage (IE = 100 Adc, IC = 0) Collector Cutoff Current (VCE = 60 Vdc, IB = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) Adc ICBO MPSA05, MPSA55 MPSA06, MPSA56 ON CHARACTERISTICS DC Current Gain (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) hFE - Collector-Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) VCE(sat) - 0.25 Vdc Base-Emitter On Voltage (IC = 100 mAdc, VCE = 1.0 Vdc) VBE(on) - 1.2 Vdc 100 - 50 - SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (Note 3.) (IC = 10 mA, VCE = 2.0 V, f = 100 MHz) fT MHz MPSA05 MPSA06 MPSA55 MPSA56 (IC = 100 mAdc, VCE = 1.0 Vdc, f = 100 MHz) 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 3. fT is defined as the frequency at which |hfe| extrapolates to unity. TURN-ON TIME VCC -1.0 V 5.0 s 100 +10 V 0 +40 V RL 100 100 5.0 s tr = 3.0 ns *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities Figure 1. Switching Time Test Circuits http://onsemi.com 856 RL OUTPUT * CS 6.0 pF 5.0 F 100 +40 V RB Vin * CS 6.0 pF 5.0 F VCC OUTPUT RB Vin tr = 3.0 ns TURN-OFF TIME +VBB MPSA05, MPSA06, MPSA55, MPSA56 PNP 300 f T , CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) f T , CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) NPN 200 VCE = 2.0 V TJ = 25C 200 100 100 70 50 30 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 -20 -30 -50 -70 -100 C, CAPACITANCE (pF) 50 10 8.0 Cobo 6.0 4.0 0.1 0.2 0.5 1.0 2.0 5.0 10 Cibo 30 20 Cobo 10 7.0 20 50 5.0 -0.1 -0.2 100 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 4. MPSA05/06 Capacitance Figure 5. MPSA55/56 Capacitance 1.0 k 700 500 1.0 k 700 500 ts 300 tf 5.0 7.0 10 50 70 100 100 70 50 20 td @ VBE(off) = 0.5 V 30 200 30 tr 20 ts 300 200 VCC = 40 V IC/IB = 10 IB1 = IB2 TJ = 25C -200 TJ = 25C 70 t, TIME (ns) C, CAPACITANCE (pF) -5.0 -7.0 -10 100 TJ = 25C Cibo 10 20 -2.0 -3.0 Figure 3. MPSA55/56 Current-Gain -- Bandwidth Product 20 20 30 Figure 2. MPSA05/06 Current-Gain -- Bandwidth Product 40 30 50 IC, COLLECTOR CURRENT (mA) 60 100 70 50 70 IC, COLLECTOR CURRENT (mA) 80 t, TIME (ns) VCE = -2.0 V TJ = 25C 200 300 tf VCC = -40 V IC/IB = 10 IB1 = IB2 TJ = 25C 10 -5.0 -7.0 -10 500 td @ VBE(off) = -0.5 V -20 -30 -50 -70 -100 tr -200 -300 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 6. MPSA05/06 Switching Time Figure 7. MPSA55/56 Switching Time http://onsemi.com 857 -500 MPSA05, MPSA06, MPSA55, MPSA56 NPN PNP 1.0 ms 300 200 20 MPSA05 2.0 3.0 5.0 7.0 10 MPSA06 20 50 30 70 100 -5.0 -7.0 -10 -20 -30 -50 -70 -100 400 TJ = 125C h FE, DC CURRENT GAIN VCE = 1.0 V 25C 100 80 60 1.0 2.0 3.0 5.0 10 20 30 50 100 200 VCE = -1.0 V 25C -55C 100 80 60 40 -0.5 -1.0 -2.0 200 300 500 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 10. MPSA05/06 DC Current Gain Figure 11. MPSA55/56 DC Current Gain -1.0 TJ = 25C 0.6 VBE(on) @ VCE = 1.0 V 0.4 1.0 2.0 5.0 10 20 50 100 200 500 VBE(sat) @ IC/IB = 10 -0.6 VBE(on) @ VCE = -1.0 V -0.4 -0.2 VCE(sat) @ IC/IB = 10 0 -0.5 VCE(sat) @ IC/IB = 10 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 12. MPSA05/06 "ON" Voltages Figure 13. MPSA55/56 "ON" Voltages http://onsemi.com 858 -500 TJ = 25C -0.8 VBE(sat) @ IC/IB = 10 V, VOLTAGE (VOLTS) h FE , DC CURRENT GAIN -2.0 -3.0 Figure 9. MPSA55/56 Active-Region Safe Operating Area 0.8 V, VOLTAGE (VOLTS) -1.0 MPSA56 Figure 8. MPSA05/06 Active-Region Safe Operating Area -55C 0 0.5 MPSA55 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 200 0.2 -20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) TJ = 125C 1.0 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT -30 -10 400 40 0.5 TA = 25C -100 -70 -50 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 1.0 s TC = 25C -200 TA = 25C 30 100 s 1.0 ms -300 1.0 s TC = 25C 100 70 50 10 1.0 -1.0 k -700 -500 100 s I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) 1.0 k 700 500 -500 MPSA05, MPSA06, MPSA55, MPSA56 PNP VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) NPN 1.0 TJ = 25C 0.8 0.6 IC = 250 mA IC = 100 mA IC = 50 mA IC = 500 mA 0.4 IC = 10 mA 0.2 0 0.05 0.2 0.1 0.5 2.0 1.0 5.0 10 20 -0.4 IC = -10 mA -0.2 R VB , TEMPERATURE COEFFICIENT (mV/ C) R VB , TEMPERATURE COEFFICIENT (mV/ C) RVB for VBE -2.8 0.5 r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE -0.6 0 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 Figure 15. MPSA55/56 Collector Saturation Region -2.4 1.0 2.0 5.0 10 20 50 100 200 500 -50 -0.8 -1.2 -1.6 RVB for VBE -2.0 -2.4 -2.8 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 16. MPSA05/06 Base-Emitter Temperature Coefficient Figure 17. MPSA55/56 Base-Emitter Temperature Coefficient -500 D = 0.5 0.2 0.1 0.05 0.02 SINGLE PULSE ZJC(t) = r(t) * RJC TJ(pk) - TC = P(pk) ZJC(t) ZJA(t) = r(t) * RJA TJ(pk) - TA = P(pk) ZJA(t) D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN469) P(pk) 0.01 t1 SINGLE PULSE 0.03 t2 0.02 0.01 IC = -500 mA Figure 14. MPSA05/06 Collector Saturation Region -2.0 0.1 0.07 0.05 IC = -250 mA IC = -100 mA IC = -50 mA IB, BASE CURRENT (mA) -1.6 0.2 -0.8 IB, BASE CURRENT (mA) -1.2 0.3 TJ = 25C 50 -0.8 1.0 0.7 0.5 -1.0 DUTY CYCLE, D = t1/t2 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k t, TIME (ms) Figure 18. MPSA05, MPSA06, MPSA55 and MPSA56 Thermal Response http://onsemi.com 859 20 k 50 k 100 k ON Semiconductor MPSA13 MPSA14 * Darlington Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCES 30 Vdc Collector-Base Voltage VCBO 30 Vdc Emitter-Base Voltage VEBO 10 Vdc Collector Current -- Continuous IC 500 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watts mW/C TJ, Tstg -55 to +150 C Operating and Storage Junction Temperature Range 1 2 3 CASE 29-11, STYLE 1 TO-92 (TO-226AA) COLLECTOR 3 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W BASE 2 EMITTER 1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Min Max Unit V(BR)CES 30 -- Vdc Collector Cutoff Current (VCB= 30 Vdc, IE = 0) ICBO -- 100 nAdc Emitter Cutoff Current (VEB= 10 Vdc, IC = 0) IEBO -- 100 nAdc Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 100 Adc, IB = 0) Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 June, 2001 - Rev. 2 860 Publication Order Number: MPSA13/D MPSA13 MPSA14 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Min Max MPSA13 MPSA14 5,000 10,000 -- -- MPSA13 MPSA14 10,000 20,000 -- -- Characteristic ON Unit CHARACTERISTICS(1) DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) hFE (IC = 100 mAdc, VCE = 5.0 Vdc) -- Collector-Emitter Saturation Voltage (IC = 100 mAdc, IB = 0.1 mAdc) VCE(sat) -- 1.5 Vdc Base-Emitter On Voltage (IC = 100 mAdc, VCE = 5.0 Vdc) VBE(on) -- 2.0 Vdc fT 125 -- MHz SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product(2) (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width 300 s; Duty Cycle 2.0%. 2. fT = |hfe| ftest. RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model http://onsemi.com 861 MPSA13 MPSA14 NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25C) 2.0 BANDWIDTH = 1.0 Hz RS 0 200 i n, NOISE CURRENT (pA) en, NOISE VOLTAGE (nV) 500 100 10 A 50 100 A 20 IC = 1.0 mA 10 5.0 BANDWIDTH = 1.0 Hz 1.0 0.7 0.5 IC = 1.0 mA 0.3 0.2 100 A 0.1 0.07 0.05 10 A 0.03 10 20 50 100 200 500 1k 2k 5k 10k 20k f, FREQUENCY (Hz) 50k 100k 0.02 10 20 50 100 200 14 200 IC = 10 A 70 50 100 A 30 20 10 1.0 mA 1.0 2.0 BANDWIDTH = 10 Hz TO 15.7 kHz 12 BANDWIDTH = 10 Hz TO 15.7 kHz 100 50k 100k Figure 3. Noise Current NF, NOISE FIGURE (dB) VT, TOTAL WIDEBAND NOISE VOLTAGE (nV) Figure 2. Noise Voltage 500 1k 2k 5k 10k 20k f, FREQUENCY (Hz) 10 10 A 8.0 100 A 6.0 4.0 IC = 1.0 mA 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (k) 500 1000 0 1.0 Figure 4. Total Wideband Noise Voltage 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (k) Figure 5. Wideband Noise Figure http://onsemi.com 862 500 1000 MPSA13 MPSA14 SMALL-SIGNAL CHARACTERISTICS 4.0 |h fe |, SMALL-SIGNAL CURRENT GAIN C, CAPACITANCE (pF) 20 TJ = 25C 10 7.0 Cibo Cobo 5.0 3.0 2.0 0.04 0.1 0.2 0.4 1.0 2.0 4.0 VR, REVERSE VOLTAGE (VOLTS) 10 20 VCE = 5.0 V f = 100 MHz TJ = 25C 2.0 1.0 0.8 0.6 0.4 0.2 0.5 40 1.0 hFE, DC CURRENT GAIN 200k TJ = 125C 100k 70k 50k 25C 30k 20k 10k 7.0k 5.0k -55C 3.0k 2.0k 5.0 7.0 10 VCE = 5.0 V 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 TJ = 25C 2.5 IC = 10 mA RV, TEMPERATURE COEFFICIENTS (mV/C) TJ = 25C V, VOLTAGE (VOLTS) 1.4 VBE(sat) @ IC/IB = 1000 1.2 VBE(on) @ VCE = 5.0 V 1.0 VCE(sat) @ IC/IB = 1000 5.0 7.0 10 50 mA 250 mA 500 mA 2.0 1.5 1.0 0.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (A) 500 1000 Figure 9. Collector Saturation Region 1.6 0.6 500 3.0 Figure 8. DC Current Gain 0.8 0.5 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) Figure 7. High Frequency Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 6. Capacitance 2.0 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 -1.0 -2.0 *APPLIES FOR IC/IB hFE/3.0 25C TO 125C *RVC FOR VCE(sat) -55C TO 25C -3.0 25C TO 125C -4.0 VB FOR VBE -5.0 -55C TO 25C -6.0 5.0 7.0 10 Figure 10. "On" Voltages 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) Figure 11. Temperature Coefficients http://onsemi.com 863 500 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) MPSA13 MPSA14 1.0 0.7 0.5 D = 0.5 0.2 0.3 0.2 0.1 0.05 SINGLE PULSE 0.1 0.07 0.05 SINGLE PULSE 0.03 ZJC(t) = r(t) * RJCTJ(pk) - TC = P(pk) ZJC(t) ZJA(t) = r(t) * RJATJ(pk) - TA = P(pk) ZJA(t) 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 500 1.0k 2.0k 5.0k 10k Figure 12. Thermal Response IC, COLLECTOR CURRENT (mA) 1.0k 700 500 300 200 FIGURE A 1.0 ms TA = 25C tP TC = 25C 100 s PP 1.0 s 100 70 50 PP t1 30 20 10 0.4 0.6 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 1/f t DUTYCYCLE t1f 1 tP PEAK PULSE POWER = PP 40 1.0 2.0 4.0 6.0 10 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 13. Active Region Safe Operating Area Design Note: Use of Transient Thermal Resistance Data http://onsemi.com 864 ON Semiconductor MPSA18 Low Noise Transistor NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 45 Vdc Collector-Base Voltage VCBO 45 Vdc Emitter-Base Voltage VEBO 6.5 Vdc Collector Current -- Continuous IC 200 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watts mW/C TJ, Tstg -55 to +150 C Symbol Operating and Storage Junction Temperature Range 1 2 CASE 29-11, STYLE 1 TO-92 (TO-226AA) COLLECTOR 3 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Max Unit RJA(1) 200 C/W RJC 83.3 C/W 3 2 BASE 1 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage(2) (IC = 10 mAdc, IB = 0) V(BR)CEO 45 -- -- Vdc Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0) V(BR)CBO 45 -- -- Vdc Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO 6.5 -- -- Vdc ICBO -- 1.0 50 nAdc OFF CHARACTERISTICS Collector Cutoff Current (VCB = 30 Vdc, IE = 0) 1. RJA is measured with the device soldered into a typical printed circuit board. 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 865 Publication Order Number: MPSA18/D MPSA18 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Characteristic ON Min Typ Max 400 500 500 500 580 850 1100 1150 -- -- -- 1500 -- -- -- 0.08 0.2 0.3 Unit CHARACTERISTICS(2) DC Current Gain (IC = 10 Adc, VCE = 5.0 Vdc) (IC = 100 Adc, VCE = 5.0 Vdc) (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) hFE -- Collector-Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VCE(sat) Vdc Base-Emitter On Voltage (IC = 1.0 mAdc, VCE = 5.0 Vdc) VBE(on) -- 0.6 0.7 Vdc fT 100 160 -- MHz Collector-Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Ccb -- 1.7 3.0 pF Emitter-Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Ceb -- 5.6 6.5 pF Noise Figure (IC = 100 Adc, VCE = 5.0 Vdc, RS = 10 k, f = 1.0 kHz) (IC = 100 Adc, VCE = 5.0 Vdc, RS = 1.0 k, f = 100 Hz) NF -- -- 0.5 4.0 1.5 -- Equivalent Short Circuit Noise Voltage (IC = 100 Adc, VCE = 5.0 Vdc, RS = 1.0 k, f = 100 Hz) VT -- 6.5 -- SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model http://onsemi.com 866 dB nV Hz MPSA18 NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25C) NOISE VOLTAGE 30 IC = 10 mA BANDWIDTH = 1.0 Hz 20 RS 0 en, NOISE VOLTAGE (nV) 20 en, NOISE VOLTAGE (nV) 30 BANDWIDTH = 1.0 Hz 3.0 mA 10 1.0 mA 7.0 5.0 3.0 300 A 10 20 50 100 200 RS 0 f = 10 Hz 10 100 Hz 7.0 10 kHz 3.0 0.01 0.02 500 1k 2k 5k 10k 20k 50k 100k f, FREQUENCY (Hz) Figure 2. Effects of Frequency IC = 10 mA 2.0 1.0 mA 300 A 100 A 0.3 0.2 0.1 16 3.0 mA 1.0 0.7 0.5 RS 0 10 20 10 A 50 100 200 0.05 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) 5.0 10 20 BANDWIDTH = 1.0 Hz 3.0 100 kHz Figure 3. Effects of Collector Current NF, NOISE FIGURE (dB) In, NOISE CURRENT (pA) 10 7.0 5.0 1.0 kHz 5.0 BANDWIDTH = 10 Hz to 15.7 kHz 12 500 A 8.0 IC = 1.0 mA 100 A 10 A 4.0 30 A 0 10 500 1k 2k 5k 10k 20k 50k 100k f, FREQUENCY (Hz) 20 Figure 4. Noise Current 50 100 200 500 1k 2k 5k 10k 20k 50k 100k RS, SOURCE RESISTANCE (OHMS) Figure 5. Wideband Noise Figure 100 Hz NOISE DATA 20 BANDWIDTH = 1.0 Hz 100 A 100 70 50 3.0 mA 1.0 mA 30 300 A 20 10 7.0 5.0 3.0 IC = 10 mA NF, NOISE FIGURE (dB) VT, TOTAL NOISE VOLTAGE (nV) 300 200 30 A 10 A 10 20 16 IC = 10 mA 3.0 mA 1.0 mA 12 300 A 8.0 100 A 4.0 50 100 200 500 1k 2k 5k 10k 20k 50k 100k RS, SOURCE RESISTANCE (OHMS) 0 30 A 10 Figure 6. Total Noise Voltage 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k RS, SOURCE RESISTANCE (OHMS) Figure 7. Noise Figure http://onsemi.com 867 10 A BANDWIDTH = 1.0 Hz h FE, DC CURRENT GAIN (NORMALIZED) MPSA18 4.0 3.0 VCE = 5.0 V 2.0 TA = 125C 25C 1.0 -55C 0.7 0.5 0.4 0.3 0.2 0.01 0.02 0.03 0.05 0.1 1.0 0.2 0.3 0.5 IC, COLLECTOR CURRENT (mA) 2.0 3.0 5.0 10 Figure 8. DC Current Gain 1.0 -0.4 RVBE, BASE-EMITTER TEMPERATURE COEFFICIENT (mV/C) TJ = 25C V, VOLTAGE (VOLTS) 0.8 0.6 VBE @ VCE = 5.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 -0.8 -1.2 TJ = 25C to 125C -1.6 -2.0 -55C to 25C -2.4 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 100 8.0 C, CAPACITANCE (pF) 6.0 TJ = 25C Cob 4.0 3.0 Ceb Cib Ccb 2.0 1.0 0.8 0.1 0.2 1.0 2.0 5.0 0.5 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 Figure 10. Temperature Coefficients 50 100 f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) Figure 9. "On" Voltages 20 Figure 11. Capacitance 500 300 200 100 VCE = 5.0 V TJ = 25C 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 12. Current-Gain -- Bandwidth Product http://onsemi.com 868 ON Semiconductor MPSA20 Amplifier Transistor NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 4.0 Vdc Collector Current -- Continuous IC 100 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watts mW/C TJ, Tstg -55 to +150 C Operating and Storage Junction Temperature Range 1 2 CASE 29-11, STYLE 1 TO-92 (TO-226AA) COLLECTOR 3 THERMAL CHARACTERISTICS Characteristic Symbol Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case 3 RJA (1) RJC Max Unit 200 C/W 83.3 C/W 2 BASE 1 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage(2) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 -- Vdc Emitter-Base Breakdown Voltage (IE = 100 Adc, IC = 0) V(BR)EBO 4.0 -- Vdc ICBO -- 100 nAdc OFF CHARACTERISTICS Collector Cutoff Current (VCB = 30 Vdc, IE = 0) 1. RJA is measured with the device soldered into a typical printed circuit board. 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 869 Publication Order Number: MPSA20/D MPSA20 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit hFE 40 400 -- VCE(sat) -- 0.25 Vdc fT 125 -- MHz Cobo -- 4.0 pF ON CHARACTERISTICS DC Current Gain(2) (IC = 5.0 mAdc, VCE = 10 Vdc) Collector-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product(2) (IC = 5.0 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. EQUIVALENT SWITCHING TIME TEST CIRCUITS +3.0 V 300 ns DUTY CYCLE = 2% +10.9 V 275 10 k 10 < t1 < 500 s DUTY CYCLE = 2% +3.0 V t1 +10.9 V 0 -0.5 V <1.0 ns CS < 4.0 pF* 275 10 k -9.1 V CS < 4.0 pF* 1N916 <1.0 ns *Total shunt capacitance of test jig and connectors Figure 1. Turn-On Time TYPICAL NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25C) 20 100 IC = 1.0 mA BANDWIDTH = 1.0 Hz RS = 0 50 300 A 10 7.0 In, NOISE CURRENT (pA) en, NOISE VOLTAGE (nV) Figure 2. Turn-Off Time 100 A 5.0 10 A 3.0 2.0 20 300 A 100 A 10 5.0 2.0 1.0 30 A 0.5 30 A 10 A 0.2 10 20 50 100 200 500 1k f, FREQUENCY (Hz) 2k 5k 10k BANDWIDTH = 1.0 Hz RS IC = 1.0 mA 0.1 10 Figure 3. Noise Voltage 20 50 100 200 500 1k f, FREQUENCY (Hz) Figure 4. Noise Current http://onsemi.com 870 2k 5k 10k MPSA20 NOISE FIGURE CONTOURS (VCE = 5.0 Vdc, TA = 25C) 1M 500k BANDWIDTH = 1.0 Hz 200k 100k 50k RS , SOURCE RESISTANCE (OHMS) RS , SOURCE RESISTANCE (OHMS) 500k 20k 10k 5k 2.0 dB 2k 1k 500 200 100 50 BANDWIDTH = 1.0 Hz 200k 100k 50k 3.0 dB 4.0 dB 10 20 30 6.0 dB 50 70 100 200 300 IC, COLLECTOR CURRENT (A) 10 dB 500 700 1k 20k 10k 1.0 dB 5k 2.0 dB 2k 1k 500 200 100 5.0 dB 8.0 dB 10 20 Figure 5. Narrow Band, 100 Hz RS , SOURCE RESISTANCE (OHMS) 500k 30 50 70 100 200 300 IC, COLLECTOR CURRENT (A) 500 700 1k Figure 6. Narrow Band, 1.0 kHz 10 Hz to 15.7 kHz 200k 100k 50k Noise Figure is defined as: 20k 10k 5k NF 20 log10 1.0 dB 2k 1k 500 200 100 50 3.0 dB 2.0 dB en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman's Constant (1.38 x 10-23 j/K) T = Temperature of the Source Resistance (K) RS = Source Resistance (Ohms) 3.0 dB 5.0 dB 8.0 dB 10 20 30 50 70 100 200 300 500 700 2 2 1 2 S In RS en2 4KTR 4KTRS 1k IC, COLLECTOR CURRENT (A) Figure 7. Wideband http://onsemi.com 871 MPSA20 TYPICAL STATIC CHARACTERISTICS h FE, DC CURRENT GAIN 400 TJ = 125C 25C 200 -55C 100 80 MPSA20 VCE = 1.0 V VCE = 10 V 60 40 0.004 0.006 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100 1.0 100 MPSA20 TJ = 25C 0.8 IC = 1.0 mA 0.6 10 mA 50 mA IC, COLLECTOR CURRENT (mA) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 8. DC Current Gain 100 mA 0.4 0.2 0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 5.0 10 TA = 25C PULSE WIDTH = 300 s 80 DUTY CYCLE 2.0% 200 A 40 100 A 20 0 5.0 10 15 20 25 30 35 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) TJ = 25C V, VOLTAGE (VOLTS) 1.2 1.0 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 0 VCE(sat) @ IC/IB = 10 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 40 Figure 10. Collector Characteristics V, TEMPERATURE COEFFICIENTS (mV/C) Figure 9. Collector Saturation Region 1.4 400 A 300 A 60 0 20 IB = 500 A 50 100 1.6 *APPLIES for IC/IB hFE/2 0.8 0 25C to 125C *VC for VCE(sat) -55C to 25C -0.8 25C to 125C -1.6 -2.4 0.1 Figure 11. "On" Voltages VB for VBE 0.2 -55C to 25C 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) Figure 12. Temperature Coefficients http://onsemi.com 872 50 100 MPSA20 TYPICAL DYNAMIC CHARACTERISTICS 1000 VCC = 3.0 V IC/IB = 10 TJ = 25C 100 70 50 700 500 ts 300 200 t, TIME (ns) t, TIME (ns) 300 200 tr 30 20 td @ VBE(off) = 0.5 Vdc 10 7.0 5.0 100 70 50 tf 30 VCC = 3.0 V IC/IB = 10 IB1 = IB2 TJ = 25C 20 3.0 1.0 2.0 20 30 5.0 7.0 10 3.0 IC, COLLECTOR CURRENT (mA) 50 70 10 1.0 100 2.0 3.0 500 70 100 10 TJ = 25C f = 100 MHz 300 TJ = 25C f = 1.0 MHz 7.0 200 C, CAPACITANCE (pF) VCE = 20 V 5.0 V 100 Cib 5.0 Cob 3.0 2.0 70 50 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 1.0 0.05 50 0.1 0.2 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 15. Current-Gain -- Bandwidth Product Figure 16. Capacitance 20 hie , INPUT IMPEDANCE (k ) 50 Figure 14. Turn-Off Time 10 MPSA20 hfe 200 @ IC = 1.0 mA 7.0 5.0 200 VCE = 10 Vdc f = 1.0 kHz TA = 25C hoe, OUTPUT ADMITTANCE ( mhos) f, T CURRENT-GAIN BANDWIDTH PRODUCT (MHz) Figure 13. Turn-On Time 20 30 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 100 70 50 10 50 VCE = 10 Vdc f = 1.0 kHz TA = 25C MPSA20 hfe 200 @ IC = 1.0 mA 30 20 10 7.0 5.0 3.0 2.0 0.1 Figure 17. Input Impedance 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) Figure 18. Output Admittance http://onsemi.com 873 20 50 100 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) MPSA20 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 FIGURE 20 0.05 P(pk) 0.02 0.03 0.02 t1 0.01 0.01 0.01 0.02 SINGLE PULSE 0.05 0.1 0.2 0.5 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN-569) ZJA(t) = r(t) RJA TJ(pk) - TA = P(pk) ZJA(t) t2 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k Figure 19. Thermal Response IC, COLLECTOR CURRENT (nA) 104 DESIGN NOTE: USE OF THERMAL RESPONSE DATA 103 VCC = 30 Vdc 102 ICEO 101 ICBO AND 100 ICEX @ VBE(off) = 3.0 Vdc 10-1 10-2 -40 -20 0 +20 +40 +60 +80 +100 +120 +140 +160 TJ, JUNCTION TEMPERATURE (C) Figure 21. IC, COLLECTOR CURRENT (mA) 400 1.0 ms 200 100 60 40 TC = 25C TA = 25C TJ = 150C 10 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 6.0 4.0 2.0 The safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 22 is based upon TJ(pk) = 150C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from the data in Figure 19. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100 s 10 s 1.0 s dc dc 20 4.0 6.0 8.0 10 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) A train of periodical power pulses can be represented by the model as shown in Figure 20. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 19 was calculated for various duty cycles. To find ZJA(t), multiply the value obtained from Figure 19 by the steady state value RJA. Example: Dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2) Using Figure 19 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore T = r(t) x P(pk) x RJA = 0.22 x 2.0 x 200 = 88C. For more information, see ON Semiconductor Application Note AN569/D, available from the Literature Distribution Center or on our website at www.onsemi.com. 40 Figure 22. http://onsemi.com 874 ON Semiconductor Darlington Transistor MPSA27 NPN Silicon MAXIMUM RATINGS Rating Symbol MPSA27 Unit Collector-Emitter Voltage VCES 60 Vdc Emitter-Base Voltage VEBO 10 Vdc Collector Current -- Continuous IC 500 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C TJ, Tstg -55 to +150 C Operating and Storage Junction Temperature Range 1 2 CASE 29-11, STYLE 1 TO-92 (TO-226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient 3 COLLECTOR 3 Symbol Max Unit RJA 200 C/W BASE 2 EMITTER 1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (IC = 100 Adc, VBE = 0) V(BR)CES 60 -- -- Vdc Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0) V(BR)CBO 60 -- -- Vdc Collector Cutoff Current (VCB = 30 V, IE = 0) (VCB = 40 V, IE = 0) (VCB = 50 V, IE = 0) ICBO -- -- 100 nAdc Collector Cutoff Current (VCE = 30 V, VBE = 0) (VCE = 40 V, VBE = 0) (VCE = 50 V, VBE = 0) ICES -- -- 500 nAdc Emitter Cutoff Current (VEB = 10 Vdc) IEBO -- -- 100 nAdc OFF CHARACTERISTICS Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 875 Publication Order Number: MPSA27/D MPSA27 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Characteristic ON Min Typ Max 10,000 10,000 -- -- -- -- Unit CHARACTERISTICS(1) DC Current Gain (IC = 10 mA, VCE = 5.0 V) (IC = 100 mA, VCE = 5.0 V) hFE -- Collector-Emitter Saturation Voltage (IC = 100 mA, IB = 0.1 mAdc) VCE(sat) -- -- 1.5 Vdc Base-Emitter On Voltage (IC = 100 mA, VCE = 5.0 Vdc) VBE(on) -- -- 2.0 Vdc hfe 1.25 2.4 -- -- SMALL-SIGNAL CHARACTERISTICS Small Signal Current Gain (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. Figure 23. http://onsemi.com 876 MPSA27 VCE = 5.0 V TA = 25C 40 TA = -55C 0 1.0 2.0 3.0 10 100 20 30 200 500 1.0 VCE(S) @ IC/IB = 1.0 k 1.0 1k 2.0 3.0 10 100 20 30 200 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain Figure 2. "ON" Voltages 500 1k 4.0 hfe , SMALL-SIGNAL CURRENT GAIN TA = 25C 1.3 1.2 IC = 500 mA 1.1 1.0 0.8 VBE(ON) @ VCE = 5.0 V IC, COLLECTOR CURRENT (mA) 1.5 0.9 1.2 0.6 1.6 1.4 VBE(S) @ IC/IB = 1.0 k 1.4 0.8 20 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 80 60 TA = 25C 1.6 TA = 125C 100 IC = 250 mA IC = 100 mA IC = 10 mA 0.7 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 2.0 1.0 0.8 0.6 0.4 0.2 500 1 k VCE = 5.0 V f = 100 MHz TA = 25C 0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (A) IC, COLLECTOR CURRENT (mA) Figure 3. Collector Saturation Region Figure 4. High Frequency Current Gain 1k I C , COLLECTOR CURRENT (mA) h FE , DC CURRENT GAIN (k) 120 1.0 ms 500 100 s 1.0 s 200 TC = 25C TA = 25C 100 50 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 20 10 1.0 2.0 4.0 6.0 10 20 40 50 60 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. Active Region -- Safe Operating Area http://onsemi.com 877 500 ON Semiconductor MPSA28 MPSA29* Darlington Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol MPSA28 MPSA29 Unit Collector-Emitter Voltage VCES 80 100 Vdc Collector-Base Voltage VCBO 80 100 Vdc Emitter-Base Voltage VEBO 12 Vdc Collector Current -- Continuous IC 500 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watts mW/C TJ, Tstg -55 to +150 C Operating and Storage Junction Temperature Range 1 2 CASE 29-11, STYLE 1 TO-92 (TO-226AA) COLLECTOR 3 THERMAL CHARACTERISTICS Characteristic 3 Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W BASE 2 EMITTER 1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max 80 100 -- -- -- -- 80 100 -- -- -- -- 12 -- -- -- -- -- -- 100 100 -- -- -- -- 500 500 -- -- 100 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 100 Adc, VBE = 0) Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0) V(BR)CES MPSA28 MPSA29 Vdc V(BR)CBO MPSA28 MPSA29 Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) MPSA28 MPSA29 Collector Cutoff Current (VCE = 60 Vdc, VBE = 0) (VCE = 80 Vdc, VBE = 0) MPSA28 MPSA29 Vdc ICBO nAdc ICES Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) IEBO Vdc nAdc nAdc Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 878 Publication Order Number: MPSA28/D MPSA28 MPSA29 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Characteristic ON Min Typ Max 10,000 10,000 -- -- -- -- -- -- 0.7 0.8 1.2 1.5 Unit CHARACTERISTICS(1) DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) hFE -- Collector-Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.01 mAdc) (IC = 100 mAdc, IB = 0.1 mAdc) VCE(sat) Vdc Base-Emitter On Voltage (IC = 100 mAdc, VCE = 5.0 Vdc) VBE(on) -- 1.4 2.0 Vdc fT 125 200 -- MHz Cobo -- 5.0 8.0 pF SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product(2) (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 2. fT = hfe ftest. http://onsemi.com 879 MPSA28 MPSA29 200 1.8 TA = 125C 100 50 TA = 25C 20 TA = -55C V, VOLTAGE (VOLTS) h FE , DC CURRENT GAIN (k) VCE = 5.0 V 10 5.0 2.0 5.0 10 20 100 50 200 500 VCE , COLLECTOR VOLTAGE (VOLTS) V, TEMPERATURE COEFFICIENT (mV/ C) 10 20 100 50 200 500 1k 2.4 25C to 125C -55C to 25C 25C to 125C -55C to 25C -4.0 VB for VBE 2.0 5.0 10 20 100 50 TA = 25C 2.0 IC = 500 mA 1.6 1.2 IC = 100 mA IC = 10 mA IC = 250 mA 0.8 0.4 500 200 0.2 1.0 2.0 10 20 100 200 1 k 1.5 k IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (A) Figure 8. Temperature Coefficients Figure 9. Collector Saturation Region 10 500 1.0 ms h fe , HIGH FREQUENCY CURRENT GAIN 1k I C , COLLECTOR CURRENT (mA) 5.0 Figure 7. "ON" Voltages -3.0 100 s 1.0 s 200 10 1.0 2.0 Figure 6. DC Current Gain -2.0 20 VCE(S) @ IC/IB = 1.0 k IC, COLLECTOR CURRENT (mA) VC for VCE(S) 50 1.0 IC, COLLECTOR CURRENT (mA) -1.0 100 VBE(ON) @ VCE = 5.0 V 1.2 0.6 1.0 1k 0 -5.0 1.0 TA = 25C 1.4 0.8 2.0 1.0 1.0 VBE(S) @ IC/IB = 1.0 k 1.6 TC = 25C TA = 25C CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT MPSA28 VALID FOR DUTY CYCLE 10% MPSA29 2.0 5.0 10 20 50 100 5.0 VCE = 5.0 V TA = 25C f = 100 MHz 2.0 1.0 0.5 0.2 0.1 0.3 0.5 1.0 2.0 5.0 10 20 50 100 200 300 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 10. Active Region -- Safe Operating Area Figure 11. High Frequency Current Gain http://onsemi.com 880 MPSA42, MPSA43 MPSA42 is a Preferred Device High Voltage Transistors NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value VCEO MPSA43 MPSA42 Collector-Base Voltage Vdc 200 300 VCBO MPSA43 MPSA42 Emitter-Base Voltage 2 BASE Vdc 200 300 1 EMITTER VEBO 6.0 Vdc Collector Current - Continuous IC 500 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watts mW/C -55 to +150 C Operating and Storage Junction Temperature Range COLLECTOR 3 Unit TJ, Tstg MARKING DIAGRAM MPS A4x YWW 1 2 3 Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 C/mW MPSA4x= Specific Device Code x = 2 or 3 Y = Year W = Work Week Thermal Resistance, Junction to Case RJC 83.3 C/mW ORDERING INFORMATION THERMAL CHARACTERISTICS Characteristic Device Package Shipping MPSA42 TO-92 5000 Units/Box MPSA42RLRA TO-92 2000/Tape & Reel MPSA42RLRE TO-92 2000/Tape & Reel MPSA42RLRF TO-92 5000 Units/Box MPSA42RLRM TO-92 2000/Ammo Pack MPSA42RLRP TO-92 2000/Ammo Pack MPSA43 TO-92 5000 Units/Box MPSA43RLRA TO-92 2000/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 October, 2001 - Rev. 2 881 Publication Order Number: MPSA42/D MPSA42, MPSA43 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit 300 200 - - 300 200 - - 6.0 - - - 0.1 0.1 - - 0.1 0.1 25 40 40 - - - - - 0.5 0.4 VBE(sat) - 0.9 Vdc fT 50 - MHz - - 3.0 4.0 OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Note 1.) (IC = 1.0 mAdc, IB = 0) V(BR)CEO MPSA42 MPSA43 Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0) Vdc V(BR)CBO MPSA42 MPSA43 Emitter-Base Breakdown Voltage (IE = 100 Adc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 200 Vdc, IE = 0) (VCB = 160 Vdc, IE = 0) MPSA42 MPSA43 Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) (VEB = 4.0 Vdc, IC = 0) MPSA42 MPSA43 Vdc Vdc Adc ICBO Adc IEBO ON CHARACTERISTICS (Note 1.) hFE DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 30 mAdc, VCE = 10 Vdc) Collector-Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) - VCE(sat) MPSA42 MPSA43 Base-Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Collector-Base Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) Ccb MPSA42 MPSA43 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. http://onsemi.com 882 pF MPSA42, MPSA43 120 hFE , DC CURRENT GAIN VCE = 10 Vdc TJ = +125C 100 80 25C 60 40 -55C 20 0 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) Figure 12. DC Current Gain 100 C, CAPACITANCE (pF) Ceb @ 1MHz 10 1.0 0.1 0.1 Ccb @ 1MHz 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) 1000 Figure 13. Capacitance 1.4 V, VOLTAGE (VOLTS) 1.2 VCE(sat) @ 25C, IC/IB = 10 VCE(sat) @ 125C, IC/IB = 10 VCE(sat) @ -55C, IC/IB = 10 VBE(sat) @ 25C, IC/IB = 10 1.0 0.8 VBE(sat) @ 125C, IC/IB = 10 0.6 VBE(sat) @ -55C, IC/IB = 10 VBE(on) @ 25C, VCE = 10 V VBE(on) @ 125C, VCE = 10 V VBE(on) @ -55C, VCE = 10 V 0.4 0.2 0.0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100 Figure 14. "ON" Voltages http://onsemi.com 883 ON Semiconductor MPSA62 MPSA63 MPSA64 Darlington Transistors PNP Silicon MAXIMUM RATINGS MPSA64 is a Preferred Device Symbol MPSA62 MPSA63 MPSA64 Collector-Emitter Voltage VCES -20 -30 Vdc Collector-Base Voltage VCBO -20 -30 Vdc Emitter-Base Voltage VEBO -10 Vdc Collector Current -- Continuous IC -500 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TA = 25C Derate above 25C PD 1.5 12 Watts mW/C TJ, Tstg -55 to +150 C Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W Rating Operating and Storage Junction Temperature Range Unit 1 2 3 CASE 29-04, STYLE 1 TO-92 (TO-226AA) THERMAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max V(BR)CES Vdc -20 -30 -- -- -- -- -100 -100 -- -100 BASE 2 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = -100 Adc, VBE = 0) MPSA62 COLLECTOR 3 EMITTER 1 MPSA63, MPSA64 Collector Cutoff Current (VCB= -15 Vdc, IE = 0) MPSA62 (VCB = -30 Vdc, IE = 0) MPSA63, MPSA64 ICBO Emitter Cutoff Current (VEB = -10 Vdc, IC = 0) IEBO nAdc nAdc Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 884 Publication Order Number: MPSA62/D MPSA62 MPSA63 MPSA64 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max MPSA63 MPSA64 MPSA62 5,000 10,000 20,000 -- -- -- MPSA63 MPSA64 10,000 20,000 -- -- -- -- -1.0 -1.5 -- -- -1.4 -2.0 125 -- Unit ON CHARACTERISTICS(1) DC Current Gain (IC = -10 mAdc, VCE = -5.0 Vdc) hFE (IC = -100 mAdc, VCE = -5.0 Vdc) Collector-Emitter Saturation Voltage (IC = -10 mAdc, IB = -0.01 mAdc) (IC = -100 mAdc, IB = -0.1 mAdc) MPSA62 MPSA63, MPSA64 Base-Emitter On Voltage (IC = -10 mAdc, VCE = -5.0 Vdc) (IC = -100 mAdc, VCE = -5.0 Vdc) MPSA62 MPSA63, MPSA64 -- VCE(sat) Vdc VBE(on) Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product(2) (IC = -100 mAdc, VCE = -5.0 Vdc, f = 100 MHz) fT MPSA63, MPSA64 1. Pulse Test: Pulse Width 300 s; Duty Cycle 2.0%. 2. fT = |hfe| ftest. http://onsemi.com 885 MHz MPSA62 MPSA63 MPSA64 hFE , DC CURRENT GAIN (X1.0 K) 200 TA = 125C 100 70 50 30 -10 V 25C VCE = -2.0 V -5.0 V 20 10 7.0 5.0 -55C 3.0 2.0 -0.3 -0.5 -0.7 -2.0 -1.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) -2.0 TA = 25C VBE(sat) @ IC/IB = 100 V, VOLTAGE (VOLTS) -1.6 -1.2 VBE(on) @ VCE = -5.0 V -0.8 VCE(sat) @ IC/IB = 1000 IC/IB = 100 -0.4 0 -0.3 -0.5 -1.0 -2 -3 -5 -10 -20 -30 -50 IC, COLLECTOR CURRENT (mA) -100 -200 -300 -2.0 TA = 25C -1.8 -1.6 -1.4 IC = -10 mA -50 mA -100 mA -175 mA -1.2 -1.0 -0.8 -0.6 -0.1-0.2 -0.5 -1 -2 -5 -10 -20 -50 -100-200 -500 -1K-2K -5K-10K IB, BASE CURRENT (A) Figure 3. Collector Saturation Region -1000 10 VCE = -5.0 V f = 100 MHz TA = 25C IC, COLLECTOR CURRENT (mA) |h FE |, HIGH FREQUENCY CURRENT GAIN Figure 2. "On" Voltage 4.0 3.0 2.0 -300 mA -300 -200 TA = 25C 0.4 0.2 -5.0 -10 -20 -50 -100 -200 -500 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT (DUTY CYCLE 10%) MPSA62 -50 -20 MPSA63 -10 -1.0 -1K 1.0 s TC = 25C -100 1.0 0.1 -1.0 -2.0 100 s 1.0 ms -2.0 -4.0 -6.0 -10 -20 -40 -60 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR VOLTAGE (VOLTS) Figure 4. High Frequency Current Gain Figure 5. Active Region, Safe Operating Area http://onsemi.com 886 ON Semiconductor Darlington Transistors MPSA75 MPSA77 PNP Silicon MAXIMUM RATINGS Rating Symbol MPSA75 MPSA77 Unit Collector-Emitter Voltage VCES -40 -60 Vdc Emitter-Base Voltage VEBO -10 Vdc Collector Current -- Continuous IC -500 Adc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C TJ, Tstg -55 to +150 C Operating and Storage Junction Temperature Range 1 2 3 CASE 29-11, STYLE 1 TO-92 (TO-226AA) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 C/W COLLECTOR 3 BASE 2 EMITTER 1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = -100 Adc, VBE = 0) MPSA75 MPSA77 V(BR)CES -40 -60 -- -- -- -- Vdc Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0) MPSA75 MPSA77 V(BR)CBO -40 -60 -- -- -- -- Vdc Collector Cutoff Current (VCB= -30 V, IE = 0) (VCB = -50 V, IE = 0) MPSA75 MPSA77 -- -- -- -- -100 -100 Collector Cutoff Current (VCE = -30 V, VBE = 0) (VCE = -50 V, VBE = 0) MPSA75 MPSA77 -- -- -- -- -500 -500 -- -- -100 10,000 10,000 -- -- -- -- VCE(sat) -- -- -1.5 Vdc VBE -- -- -2.0 Vdc |hfe| 1.25 2.4 -- -- ICBO nAdc ICES Emitter Cutoff Current (VEB = -10 Vdc) IEBO nAdc nAdc ON CHARACTERISTICS DC Current Gain (IC = -10 mA, VCE = -5.0 V) (IC = -100 mA, VCE = -5.0 V) hFE Collector-Emitter Saturation Voltage (IC = -100 mA, IB = -0.1 mAdc) Base-Emitter On Voltage (IC = -100 mA, VCE = -5.0 Vdc) -- SMALL-SIGNAL CHARACTERISTICS Current-Gain -- High Frequency (IC = -10 mA, VCE = -5.0 V, f = 100 MHz) Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 887 Publication Order Number: MPSA75/D MPSA75 MPSA77 hFE , DC CURRENT GAIN (X1.0 K) 200 TA = 125C 100 70 50 30 -10 V 25C VCE = -2.0 V -5.0 V 20 10 7.0 5.0 -55C 3.0 2.0 -0.3 -0.5 -0.7 -2.0 -1.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) -2.0 TA = 25C VBE(sat) @ IC/IB = 100 V, VOLTAGE (VOLTS) -1.6 -1.2 VBE(on) @ VCE = -5.0 V -0.8 VCE(sat) @ IC/IB = 1000 IC/IB = 100 -0.4 0 -0.3 -0.5 -1.0 -2 -3 -5 -10 -20 -30 -50 IC, COLLECTOR CURRENT (mA) -100 -200 -300 -2.0 TA = 25C -1.8 -1.6 -1.4 IC = -10 mA -50 mA -100 mA -175 mA -1.2 -1.0 -0.8 -0.6 -0.1-0.2 -0.5 -1 -2 -5 -10 -20 -50 -100-200 -500 -1K-2K -5K-10K IB, BASE CURRENT (A) Figure 3. Collector Saturation Region -1000 10 VCE = -5.0 V f = 100 MHz TA = 25C IC, COLLECTOR CURRENT (mA) |h FE |, HIGH FREQUENCY CURRENT GAIN Figure 2. "On" Voltage 4.0 3.0 2.0 -300 mA -300 -200 TA = 25C 0.4 0.2 -5.0 -10 -20 -50 -100 -200 -500 -1K 1.0 s TC = 25C -100 1.0 0.1 -1.0 -2.0 100 s 1.0 ms CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT (DUTY CYCLE 10%) MPSA75 -50 -20 MPSA77 -10 -1.0 -2.0 -4.0 -6.0 -10 -20 -40 -60 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR VOLTAGE (VOLTS) Figure 4. High Frequency Current Gain Figure 5. Active Region, Safe Operating Area http://onsemi.com 888 MPSA92, MPSA93 MPSA92 is a Preferred Device High Voltage Transistors PNP Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value VCEO MPSA93 MPSA92 Collector-Base Voltage Vdc 2 BASE -200 -300 VCBO MPSA93 MPSA92 Emitter-Base Voltage Vdc -200 -300 1 EMITTER VEBO -5.0 Vdc Collector Current - Continuous IC -500 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watts mW/C TJ, Tstg -55 to +150 C Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic COLLECTOR 3 Unit STYLE 1 MPSA92, MPSA93 MARKING DIAGRAM MPS A9x YWW 1 2 3 TO-92 CASE 29 STYLES 1, 14 MPSA9 x Y W = Specific Device Code = 2 or 2 = Year = Work Week ORDERING INFORMATION Device Package Shipping MPSA92 TO-92 5000 Units/Box MPSA92RLRA TO-92 2000/Tape & Reel MPSA92RLRE TO-92 2000/Tape & Reel MPSA92RLRM TO-92 2000/Ammo Pack MPSA92RLRP TO-92 2000/Ammo Pack MPSA93 TO-92 5000 Units/Box MPSA93RLRA TO-92 2000/Tape & Reel MPSA93RLRM TO-92 2000/Ammo Pack Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 December, 2000 - Rev. 2 889 Publication Order Number: MPSA92/D MPSA92, MPSA93 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit -300 -200 - - -300 -200 - - -5.0 - - - -0.25 -0.25 - -0.1 All Types All Types 25 40 - - MPSA92 MPSA93 25 25 - - - - -0.5 -0.4 VBE(sat) - -0.9 Vdc fT 50 - MHz - - 6.0 8.0 OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Note 1.) (IC = -1.0 mAdc, IB = 0) V(BR)CEO MPSA92 MPSA93 Collector-Base Breakdown Voltage (IC = -100 Adc, IE = 0) Vdc V(BR)CBO MPSA92 MPSA93 Emitter-Base Breakdown Voltage (IE = -100 Adc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = -200 Vdc, IE = 0) (VCB = -160 Vdc, IE = 0) Vdc Adc ICBO MPSA92 MPSA93 Emitter Cutoff Current (VEB = -3.0 Vdc, IC = 0) IEBO Vdc Adc ON CHARACTERISTICS (Note 1.) hFE DC Current Gain (IC = -1.0 mAdc, VCE = -10 Vdc) (IC = -10 mAdc, VCE = -10 Vdc) (IC = -30 mAdc, VCE = -10 Vdc) Collector-Emitter Saturation Voltage (IC = -20 mAdc, IB = -2.0 mAdc) - VCE(sat) MPSA92 MPSA93 Base-Emitter Saturation Voltage (IC = -20 mAdc, IB = -2.0 mAdc) Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (IC = -10 mAdc, VCE = -20 Vdc, f = 100 MHz) Collector-Base Capacitance (VCB = -20 Vdc, IE = 0, f = 1.0 MHz) Ccb MPSA92 MPSA93 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. http://onsemi.com 890 pF MPSA92, MPSA93 300 hFE , DC CURRENT GAIN VCE = 10 Vdc TJ = +125C 250 200 25C 150 -55C 100 50 0 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) C, CAPACITANCE (pF) 100 f, T CURRENT-GAIN BANDWIDTH (MHz) Figure 1. DC Current Gain Cib @ 1MHz 10 Ccb @ 1MHz 1.0 0.1 0.1 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) 150 130 110 90 70 50 30 10 1000 TJ = 25C VCE = 20 Vdc F = 20 MHz 1 Figure 2. Capacitance 3 5 11 13 15 7 9 IC, COLLECTOR CURRENT (mA) 17 19 Figure 3. Current-Gain - Bandwidth 1.4 V, VOLTAGE (VOLTS) 1.2 VCE(sat) @ 25C, IC/IB = 10 VCE(sat) @ 125C, IC/IB = 10 VCE(sat) @ -55C, IC/IB = 10 VBE(sat) @ 25C, IC/IB = 10 1.0 0.8 VBE(sat) @ 125C, IC/IB = 10 VBE(sat) @ -55C, IC/IB = 10 VBE(on) @ 25C, VCE = 10 V VBE(on) @ 125C, VCE = 10 V VBE(on) @ -55C, VCE = 10 V 0.6 0.4 0.2 0.0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100 Figure 4. "ON" Voltages http://onsemi.com 891 21 ON Semiconductor VHF/UHF Transistor MPSH10 NPN Silicon ON Semiconductor Preferred Devices MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc Emitter-Base Voltage VEBO 3.0 Vdc Total Device Dissipation @ TA = 25C Derate above 25C PD 350 2.8 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.0 8.0 Watts mW/C TJ, Tstg -55 to +150 C Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 357 C/W Thermal Resistance, Junction to Case RJC 125 C/W Operating and Storage Junction Temperature Range 1 2 3 CASE 29-04, STYLE 2 TO-92 (TO-226AA) THERMAL CHARACTERISTICS Characteristic COLLECTOR 3 1 BASE 2 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 25 -- Vdc Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0) V(BR)CBO 30 -- Vdc Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO 3.0 -- Vdc Collector Cutoff Current (VCB = 25 Vdc, IE = 0) ICBO -- 100 nAdc Emitter Cutoff Current (VEB = 2.0 Vdc, IC = 0) IEBO -- 100 nAdc OFF CHARACTERISTICS Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 October, 2001 - Rev. 1 892 Publication Order Number: MPSH10/D MPSH10 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Min Max Unit hFE 60 -- -- Collector-Emitter Saturation Voltage (IC = 4.0 mAdc, IB = 0.4 mAdc) VCE(sat) -- 0.5 Vdc Base-Emitter On Voltage (IC = 4.0 mAdc, VCE = 10 Vdc) VBE(on) -- 0.95 Vdc fT 650 -- MHz Collector-Base Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Ccb -- 0.7 pF Common-Base Feedback Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Crb 0.35 0.65 -- 9.0 Characteristic ON CHARACTERISTICS DC Current Gain (IC = 4.0 mAdc, VCE = 10 Vdc) SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 4.0 mAdc, VCE = 10 Vdc, f = 100 MHz) Collector Base Time Constant (IC = 4.0 mAdc, VCB = 10 Vdc, f = 31.8 MHz) rb'Cc http://onsemi.com 893 pF ps ON Semiconductor CATV Transistor MPSH17 NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 15 Vdc Collector-Base Voltage VCBO 20 Vdc Emitter-Base Voltage VEBO 3.0 Vdc PD 350 2.81 mW mW/C TJ, Tstg -55 to +150 C Total Device Dissipation @ TA = 25C Derate above 25C Operating and Storage Junction Temperature Range 1 2 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient (Printed Circuit Board Mounting) Symbol Max Unit RJA 357 C/W 3 CASE 29-11, STYLE 2 TO-92 (TO-226AA) ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 15 -- -- Vdc Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0) V(BR)CBO 20 -- -- Vdc Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO 3.0 -- -- Vdc ICBO -- -- 100 nAdc COLLECTOR 3 OFF CHARACTERISTICS Collector Cutoff Current (VCB = 15 Vdc, IE = 0) 1 BASE 2 EMITTER Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 894 Publication Order Number: MPSH17/D MPSH17 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Min Typ Max Unit hFE 25 -- 250 -- VCE(sat) -- -- 0.5 -- fT 800 -- -- MHz Collector-Base Capacitance (VCB = 10 Vdc, f = 1.0 MHz) Ccb 0.3 -- 0.9 pF Small-Signal Current Gain (IC = 5.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe 30 -- -- -- Noise Figure (IC = 5.0 mAdc, VCC = 12 Vdc, RS = 50 ohms, f = 200 MHz) NF -- -- 6.0 dB Gpe -- 24 -- dB Characteristic ON CHARACTERISTICS DC Current Gain (IC = 5.0 mAdc, VCE = 10 Vdc) Collector-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 5.0 mAdc, VCE = 10 Vdc, f = 100 MHz) FUNCTIONAL TEST Amplifier Power Gain (IC = 5.0 mAdc, VCC = 12 Vdc, RS = 50 ohms, f = 200 MHz) http://onsemi.com 895 ON Semiconductor Amplifier Transistor MPSL51 PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO -100 Vdc Collector-Base Voltage VCBO -100 Vdc Emitter-Base Voltage VEBO -4.0 Vdc Collector Current -- Continuous IC -600 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watts mW/C TJ, Tstg -55 to +150 C Operating and Storage Junction Temperature Range 1 2 CASE 29-11, STYLE 1 TO-92 (TO-226AA) COLLECTOR 3 THERMAL CHARACTERISTICS Characteristic 3 Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W 2 BASE 1 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage(1) (IC = -1.0 mAdc, IB = 0) V(BR)CEO -100 -- Vdc Collector-Base Breakdown Voltage (IC = -100 Adc, IE = 0) V(BR)CBO -100 -- Vdc Emitter-Base Breakdown Voltage (IE = -10 Adc, IC = 0) V(BR)EBO -4.0 -- Vdc Collector Cutoff Current (VCB = -50 Vdc, IE = 0) ICBO -- -1.0 Adc Emitter Cutoff Current (VEB = -3.0 Vdc, IC = 0) IEBO -- -100 nAdc OFF CHARACTERISTICS 1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 896 Publication Order Number: MPSL51/D MPSL51 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Min Max Unit DC Current Gain(1) (IC = -50 mAdc, VCE = -5.0 Vdc) hFE 40 250 -- Collector-Emitter Saturation Voltage (IC = -10 mAdc, IB = -1.0 mAdc) (IC = -50 mAdc, IB = -5.0 mAdc) VCE(sat) -- -- -0.25 -0.30 Base-Emitter Saturation Voltage (IC = -10 mAdc, IB = -1.0 mAdc) (IC = -50 mAdc, IB = -5.0 mAdc) VBE(sat) -- -- -1.2 -1.2 fT 60 -- MHz Cobo -- 8.0 pF hfe 20 -- -- Characteristic ON CHARACTERISTICS(1) Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = -10 mAdc, VCE = -10 Vdc, f = 20 MHz) Output Capacitance (VCB = -10 Vdc, IE = 0, f = 1.0 MHz) Small-Signal Current Gain (IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz) 1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%. http://onsemi.com 897 MPSL51 200 h FE, CURRENT GAIN 150 TJ = 125C 100 25C 70 50 -55C VCE = -1.0 V VCE = -5.0 V 30 20 0.2 0.1 0.3 0.5 1.0 2.0 3.0 5.0 IC, COLLECTOR CURRENT (mA) 20 10 30 50 100 10 20 50 1.0 0.9 0.8 0.7 0.6 IC = 1.0 mA 0.5 10 mA 30 mA 100 mA 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (mA) 2.0 5.0 Figure 2. Collector Saturation Region 103 IC, COLLECTOR CURRENT (A) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain 102 VCE = 30 V IC = ICES 101 TJ = 125C 100 75C 10-1 10-2 REVERSE 25C 10-3 0.3 0.2 FORWARD 0.1 0 0.1 0.2 0.3 0.4 0.5 VBE, BASE-EMITTER VOLTAGE (VOLTS) Figure 3. Collector Cut-Off Region http://onsemi.com 898 0.6 0.7 MPSL51 1.0 V, TEMPERATURE COEFFICIENT (mV/ C) TJ = 25C 0.9 V, VOLTAGE (VOLTS) 0.8 0.7 VBE(sat) @ IC/IB = 10 0.6 0.5 0.4 0.3 0.2 VCE(sat) @ IC/IB = 10 0.1 0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100 2.5 TJ = -55C to 135C 2.0 1.5 1.0 0.5 VC for VCE(sat) 0 -0.5 -1.0 -1.5 VB for VBE(sat) -2.0 -2.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) Figure 4. "On" Voltages tr, tf 10 ns DUTY CYCLE = 1.0% 0.25 F 3.0 k RC Vout RB 5.1 k Vin 100 C, CAPACITANCE (pF) 10 s INPUT PULSE 100 70 50 VCC -30 V 100 Vin TJ = 25C 30 Cibo 20 10 7.0 5.0 Cobo 3.0 1N914 2.0 1.0 0.2 Values Shown are for IC @ 10 mA 2.0 3.0 5.0 7.0 0.5 0.7 1.0 VR, REVERSE VOLTAGE (VOLTS) 0.3 Figure 6. Switching Time Test Circuit 1000 700 500 20 Figure 7. Capacitances tr @ VCC = 120 V 300 1000 700 500 tr @ VCC = 30 V 200 t, TIME (ns) t, TIME (ns) 10 2000 IC/IB = 10 TJ = 25C 100 70 50 td @ VBE(off) = 1.0 V VCC = 120 V 20 1.0 2.0 3.0 5.0 10 20 30 300 IC/IB = 10 TJ = 25C tf @ VCC = 120 V tf @ VCC = 30 V 200 ts @ VCC = 120 V 100 70 50 30 10 0.2 0.3 0.5 100 Figure 5. Temperature Coefficients VBB +8.8 V 10.2 V 50 30 50 100 20 0.2 0.3 0.5 200 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 8. Turn-On Time Figure 9. Turn-Off Time http://onsemi.com 899 50 100 200 ON Semiconductor MPSW01 MPSW01A * One Watt High Current Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value Unit VCEO MPSW01 MPSW01A Vdc 30 40 Collector-Base Voltage VCBO MPSW01 MPSW01A Emitter-Base Voltage VEBO 5.0 Vdc Collector Current -- Continuous IC 1000 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 1.0 8.0 Watts mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 2.5 20 Watts mW/C TJ, Tstg -55 to +150 C Operating and Storage Junction Temperature Range 1 Vdc 2 40 50 CASE 29-10, STYLE 1 TO-92 (TO-226AE) COLLECTOR 3 2 BASE THERMAL CHARACTERISTICS Characteristic 3 Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 125 C/W Thermal Resistance, Junction to Case RJC 50 C/W 1 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max 30 40 -- -- 40 50 -- -- 5.0 -- -- -- 0.1 0.1 -- 0.1 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) V(BR)CEO MPSW01 MPSW01A Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0) Vdc V(BR)CBO MPSW01 MPSW01A Emitter-Base Breakdown Voltage (IE = 100 Adc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 40 Vdc, IE = 0) Vdc Adc ICBO MPSW01 MPSW01A Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) IEBO Vdc Adc 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 900 Publication Order Number: MPSW01/D MPSW01 MPSW01A ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Characteristic ON Min Max 55 60 50 -- -- -- Unit CHARACTERISTICS(1) DC Current Gain (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 1000 mAdc, VCE = 1.0 Vdc) hFE -- Collector-Emitter Saturation Voltage (IC = 1000 mAdc, IB = 100 mAdc) VCE(sat) -- 0.5 Vdc Base-Emitter On Voltage (IC = 1000 mAdc, VCE = 1.0 Vdc) VBE(on) -- 1.2 Vdc fT 50 -- MHz Cobo -- 20 pF SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 1.0 300 VCE , COLLECTOR VOLTAGE (VOLTS) 100 70 VCE = 1.0 V TJ = 25C 50 30 1.0 V, VOLTAGE (VOLTS) 0.8 10 20 50 100 200 0.6 IC = 1000 mA 0.4 IC = 10 mA 0.2 0 0.01 0.02 0.05 0.1 0.2 1000 IC = IC = 500 mA IC = 250 mA 100 mA IC = 50 mA 0.5 1.0 2.0 5.0 10 20 IB, BASE CURRENT (mA) Figure 1. DC Current Gain Figure 2. Collector Saturation Region -0.8 VBE(sat) @ IC/IB = 10 -1.2 VBE(on) @ VCE = 1.0 V -1.6 VB FOR VBE -2.0 0.4 0.2 0 500 0.8 IC, COLLECTOR CURRENT (mA) TJ = 25C 0.6 TJ = 25C VB , TEMPERATURE COEFFICIENT (mV/ C) h FE , CURRENT GAIN 200 VCE(sat) @ IC/IB = 10 1.0 2.0 5.0 10 20 -2.4 -2.8 50 100 200 500 1000 1.0 2.0 5.0 10 20 50 100 200 500 1000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 3. "ON" Voltages Figure 4. Temperature Coefficient http://onsemi.com 901 50 100 80 300 TJ = 25C C, CAPACITANCE (pF) 200 100 70 VCE = 10 V TJ = 25C f = 20 MHz 50 30 10 20 100 50 200 60 40 Cibo 20 0 1000 IC, COLLECTOR CURRENT (mA) Cobo Cobo Cibo 10 2.0 5.0 1.0 15 3.0 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Current Gain -- Bandwidth Product Figure 6. Capacitance 1k IC , COLLECTOR CURRENT (mA) f T, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) MPSW01 MPSW01A 1.0 s 500 200 100 TA = 25C TC = 25C DUTY CYCLE 10% CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 50 20 10 1.0 1.0 ms 100 s MPSW01 MPSW01A 2.0 5.0 10 20 30 40 VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 7. Active Region -- Safe Operating Area http://onsemi.com 902 20 4.0 25 5.0 ON Semiconductor MPSW05 MPSW06 One Watt Amplifier Transistors NPN Silicon MPSW06 is a Preferred Device MAXIMUM RATINGS Rating Symbol MPSW05 MPSW06 Unit Collector-Emitter Voltage VCEO 60 80 Vdc Collector-Base Voltage VCBO 60 80 Vdc Emitter-Base Voltage VEBO 4.0 Vdc Collector Current -- Continuous IC 500 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 1.0 8.0 Watt mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 2.5 20 Watts mW/C TJ, Tstg -55 to +150 C Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 125 C/W Thermal Resistance, Junction to Case RJC 50 C/W Operating and Storage Junction Temperature Range 1 2 3 CASE 29-10, STYLE 1 TO-92 (TO-226AE) THERMAL CHARACTERISTICS COLLECTOR 3 2 BASE 1 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max 60 80 -- -- 4.0 -- -- -- 0.5 0.5 -- -- 0.1 0.1 -- 0.1 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO MPSW05 MPSW06 Emitter-Base Breakdown Voltage (IE = 100 Adc, IC = 0) V(BR)EBO Collector Cutoff Current (VCE = 40 Vdc, IB = 0) (VCE = 60 Vdc, IB = 0) MPSW05 MPSW06 Collector Cutoff Current (VCB = 40 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) MPSW05 MPSW06 Vdc Adc ICES Adc ICBO Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) IEBO Vdc Adc 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 October, 2001 - Rev. 2 903 Publication Order Number: MPSW05/D MPSW05 MPSW06 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Characteristic ON Min Max 80 60 -- -- Unit CHARACTERISTICS(1) DC Current Gain (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 250 mAdc, VCE = 1.0 Vdc) hFE -- Collector-Emitter Saturation Voltage (IC = 250 mAdc, IB = 10 mAdc) VCE(sat) -- 0.4 Vdc Base-Emitter Saturation Voltage (IC = 250 mAdc, VCE = 5.0 Vdc) VBE(sat) -- 1.2 Vdc fT 50 -- MHz Cobo -- 12 pF SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 200 mAdc, VCE = 5.0 Vdc, f = 20 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 400 hFE , DC CURRENT GAIN TJ = 125C VCE = 1.0 V 200 25C -55C 100 80 60 40 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 200 300 500 1.0 1.0 TJ = 25C TJ = 25C 0.8 0.6 0.8 IC = 10 mA 50 mA 100 mA 250 mA V, VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain 500 mA 0.4 0.2 0 0.05 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 0.1 0.2 0.5 1.0 2.0 5.0 IB, BASE CURRENT (mA) 10 20 0 0.5 50 Figure 2. Collector Saturation Region VCE(sat) @ IC/IB = 10 1.0 2.0 20 5.0 10 50 100 IC, COLLECTOR CURRENT (mA) Figure 3. "On" Voltages http://onsemi.com 904 200 500 MPSW05 MPSW06 80 VB, TEMPERATURE COEFFICIENT (mV/C) -0.8 TJ = 25C 60 C, CAPACITANCE (pF) -1.2 -1.6 VB for VBE -2.0 -2.4 40 Cibo 20 10 8.0 6.0 -2.8 0.5 1.0 2.0 5.0 20 50 10 100 IC, COLLECTOR CURRENT (mA) 200 Cobo 4.0 0.1 500 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 100 Figure 5. Capacitance 300 200 VCE = 2.0 V TJ = 25C IC, COLLECTOR CURRENT (mA) f, T CURRENT-GAIN BANDWIDTH PRODUCT (MHz) Figure 4. Base-Emitter Temperature Coefficient 50 100 70 50 DUTY CYCLE 10% 2k 1.0 ms 1k 100 s 500 TA = 25C 200 100 50 20 30 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 10 1.0 200 Figure 6. Current-Gain -- Bandwidth Product TC = 25C 1.0 s dc dc CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT MPSW05 MPSW06 2.0 5.0 10 20 60 80 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. Active Region -- Safe Operating Area http://onsemi.com 905 ON Semiconductor MPSW13 MPSW14 One Watt Darlington Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCES 30 Vdc Collector-Base Voltage VCBO 30 Vdc Emitter-Base Voltage VEBO 10 Vdc Collector Current -- Continuous IC 1.0 Adc Total Device Dissipation @ TA = 25C Derate above 25C PD 1.0 8.0 Watts mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 2.5 20 Watts mW/C TJ, Tstg -55 to +150 C Operating and Storage Junction Temperature Range 1 3 CASE 29-10, STYLE 1 TO-92 (TO-226AE) COLLECTOR 3 THERMAL CHARACTERISTICS Characteristic 2 Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 125 C/W Thermal Resistance, Junction to Case RJC 50 C/W BASE 2 EMITTER 1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)CES 30 -- Vdc Collector Cutoff Current (VCB = 30 Vdc, IE = 0) ICBO -- 100 nAdc Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) IEBO -- 100 nAdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 100 Adc, VBE = 0) Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 2 906 Publication Order Number: MPSW13/D MPSW13 MPSW14 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max MPSW13 MPSW14 5,000 10,000 -- -- MPSW13 MPSW14 10,000 20,000 -- -- Unit ON CHARACTERISTICS(1) DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) hFE (IC = 100 mAdc, VCE = 5.0 Vdc) -- Collector-Emitter Saturation Voltage (IC = 100 mAdc, IB = 0.1 mAdc) VCE(sat) -- 1.5 Vdc Base-Emitter On Voltage (IC = 100 mAdc, VCE = 5.0 Vdc) VBE(on) -- 2.0 Vdc fT 125 -- MHz SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product(2) (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 2. fT = |hfe| * ftest. CURRENT LIMIT DUTY CYCLE 10% THERMAL LIMIT SECOND BREAKDOWN LIMIT I C , COLLECTOR CURRENT (mA) 3.0 k 2.0 k 100 s 1.0 ms 1.0 k 1.0 s 500 200 1.5 TA = 25C TC = 25C 2.0 5.0 20 10 30 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 200 k h FE , DC CURRENT GAIN 100 k 70 k 50 k TJ = 125C 25C 30 k 20 k 10 k 7.0 k 5.0 k -55C 3.0 k 2.0 k 5.0 7.0 10 VCE = 5.0 V 20 30 50 70 100 200 300 500 VCE , COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 1. Active Region -- Safe Operating Area 3.0 IC = 10 mA 2.5 IC = 50 mA IC = 500 mA IC = 250 mA TJ = 25C 2.0 1.5 1.0 0.5 0.1 IC, COLLECTOR CURRENT (mA) 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 IB, BASE CURRENT (A) Figure 2. DC Current Gain Figure 3. Collector Saturation Region http://onsemi.com 907 MPSW13 MPSW14 V , TEMPERATURE COEFFICIENTS (mV/ C) 1.6 TJ = 25C V, VOLTAGE (VOLTS) 1.4 VBE(sat) @ IC/IB = 1000 1.2 VBE(on) @ VCE = 5.0 V 1.0 0.8 0.6 VCE(sat) @ IC/IB = 1000 5.0 7.0 10 20 50 30 70 100 200 300 500 -1.0 *APPLIES FOR IC/IB hFE/3.0 -2.0 -55C TO 25C -3.0 25C TO 125C -4.0 VB FOR VBE -5.0 -6.0 -55C TO 25C 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA) 200 300 500 20 VCE = 5.0 V TJ = 25C f = 100 MHz TJ = 25C C, CAPACITANCE (pF) h FE , SMALL-SIGNAL CURRENT GAIN 70 100 Figure 5. Temperature Coefficients 4.0 1.0 0.8 0.6 0.4 0.2 0.5 50 30 IC, COLLECTOR CURRENT (mA) Figure 4. "ON" Voltages 2.0 25C TO 125C VC FOR VCE(sat) 10 7.0 Cibo 5.0 Cobo 3.0 1.0 2.0 5.0 10 20 50 100 200 500 2.0 0.04 0.1 0.2 0.4 1.0 2.0 4.0 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 6. High Frequency Current Gain Figure 7. Capacitance http://onsemi.com 908 10 20 40 ON Semiconductor One Watt High Voltage Transistor NPN Silicon MPSW42 ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 300 Vdc Collector-Base Voltage VCBO 300 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current -- Continuous IC 500 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 1.0 8.0 Watt mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 2.5 20 Watts mW/C TJ, Tstg -55 to +150 C Operating and Storage Junction Temperature Range 1 3 CASE 29-10, STYLE 1 TO-92 (TO-226AE) COLLECTOR 3 2 BASE THERMAL CHARACTERISTICS Characteristic 2 Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 125 C/W Thermal Resistance, Junction to Case RJC 50 C/W 1 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Min Max Unit Collector-Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 300 -- Vdc Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0) V(BR)CBO 300 -- Vdc Emitter-Base Breakdown Voltage (IE = 100 Adc, IC = 0) V(BR)EBO 6.0 -- Vdc Collector Cutoff Current (VCB = 200 Vdc, IE = 0) ICBO -- 0.1 Adc Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) IEBO -- 0.1 Adc Characteristic OFF CHARACTERISTICS 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 October, 2001 - Rev. 4 909 Publication Order Number: MPSW42/D MPSW42 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max 25 40 40 -- -- -- Unit ON CHARACTERISTICS DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 30 mAdc, VCE = 10 Vdc) hFE -- Collector-Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) VCE(sat) -- 0.5 Vdc Base-Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) VBE(sat) -- 0.9 Vdc fT 50 -- MHz Ccb -- 3.0 pF SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz) Collector Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) Figure 8. http://onsemi.com 910 MPSW42 120 hFE , DC CURRENT GAIN VCE = 10 Vdc TJ = +125C 100 80 25C 60 40 -55C 20 0 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain 100 C, CAPACITANCE (pF) Ceb @ 1MHz 10 1.0 0.1 0.1 Ccb @ 1MHz 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) 1000 Figure 2. Capacitance 1.4 V, VOLTAGE (VOLTS) 1.2 VCE(sat) @ 25C, IC/IB = 10 VCE(sat) @ 125C, IC/IB = 10 VCE(sat) @ -55C, IC/IB = 10 VBE(sat) @ 25C, IC/IB = 10 1.0 0.8 VBE(sat) @ 125C, IC/IB = 10 0.6 VBE(sat) @ -55C, IC/IB = 10 VBE(on) @ 25C, VCE = 10 V VBE(on) @ 125C, VCE = 10 V VBE(on) @ -55C, VCE = 10 V 0.4 0.2 0.0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100 Figure 3. "ON" Voltages http://onsemi.com 911 ON Semiconductor MPSW45 MPSW45A* One Watt Darlington Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol MPSW45 MPSW45A Unit Collector-Emitter Voltage VCES 40 50 Vdc Collector-Base Voltage VCBO 50 60 Vdc Emitter-Base Voltage VEBO 12 12 Vdc Collector Current -- Continuous IC 1.0 1.0 Adc Total Device Dissipation @ TA = 25C Derate above 25C PD 1.0 8.0 Watts mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 2.5 20 Watts mW/C TJ, Tstg -55 to +150 C Operating and Storage Junction Temperature Range 1 2 CASE 29-10, STYLE 1 TO-92 (TO-226AE) COLLECTOR 3 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 125 C/W Thermal Resistance, Junction to Case RJC 50 C/W BASE 2 EMITTER 1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Characteristic 3 Min Max 40 50 -- -- 50 60 -- -- 12 -- -- -- 100 100 -- 100 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 100 Adc, VBE = 0) V(BR)CES MPSW45 MPSW45A Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0) Vdc V(BR)CBO MPSW45 MPSW45A Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 40 Vdc, IE = 0) Vdc ICBO MPSW45 MPSW45A Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) IEBO Vdc nAdc nAdc Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 912 Publication Order Number: MPSW45/D MPSW45 MPSW45A ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Characteristic ON Min Max 25,000 15,000 4,000 150,000 -- -- Unit CHARACTERISTICS(1) DC Current Gain (IC = 200 mAdc, VCE = 5.0 Vdc) (IC = 500 mAdc, VCE = 5.0 Vdc) (IC = 1.0 Adc, VCE = 5.0 Vdc) hFE -- Collector-Emitter Saturation Voltage (IC = 1.0 Adc, IB = 2.0 mAdc) VCE(sat) -- 1.5 Vdc Base-Emitter Saturation Voltage (IC = 1.0 Adc, IB = 2.0 mAdc) VBE(sat) -- 2.0 Vdc Base-Emitter On Voltage (IC = 1.0 Adc, VCE = 5.0 Vdc) VBE(on) -- 2.0 Vdc fT 100 -- MHz Ccb -- 6.0 pF SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 200 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Collector-Base Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width 300 s; Duty Cycle 2.0%. RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model http://onsemi.com 913 MPSW45 MPSW45A NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25C) 2.0 BANDWIDTH = 1.0 Hz RS 0 200 i n, NOISE CURRENT (pA) en, NOISE VOLTAGE (nV) 500 100 10 A 50 100 A 20 IC = 1.0 mA 10 5.0 BANDWIDTH = 1.0 Hz 1.0 0.7 0.5 IC = 1.0 mA 0.3 0.2 100 A 0.1 0.07 0.05 10 A 0.03 10 20 50 100 200 500 1k 2k 5k 10k 20k f, FREQUENCY (Hz) 50k 100k 0.02 10 20 50 100 200 Figure 3. Noise Current 14 200 BANDWIDTH = 10 Hz TO 15.7 kHz 100 IC = 10 A 70 50 100 A 30 20 10 1.0 mA 1.0 2.0 BANDWIDTH = 10 Hz TO 15.7 kHz 12 NF, NOISE FIGURE (dB) VT, TOTAL WIDEBAND NOISE VOLTAGE (nV) Figure 2. Noise Voltage 500 1k 2k 5k 10k 20k 50k 100k f, FREQUENCY (Hz) 10 10 A 8.0 100 A 6.0 4.0 IC = 1.0 mA 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (k) 500 1000 0 1.0 Figure 4. Total Wideband Noise Voltage 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (k) Figure 5. Wideband Noise Figure http://onsemi.com 914 500 1000 MPSW45 MPSW45A SMALL-SIGNAL CHARACTERISTICS 4.0 |h fe |, SMALL-SIGNAL CURRENT GAIN C, CAPACITANCE (pF) 20 TJ = 25C 10 7.0 Cibo Cobo 5.0 3.0 2.0 0.04 0.1 0.2 0.4 1.0 2.0 4.0 VR, REVERSE VOLTAGE (VOLTS) 10 20 VCE = 5.0 V f = 100 MHz TJ = 25C 2.0 1.0 0.8 0.6 0.4 0.2 0.5 40 1.0 hFE, DC CURRENT GAIN 200k TJ = 125C 100k 70k 50k 25C 30k 20k 10k 7.0k 5.0k -55C 3.0k 2.0k 5.0 7.0 10 VCE = 5.0 V 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 TJ = 25C 2.5 IC = 10 mA RV, TEMPERATURE COEFFICIENTS (mV/C) TJ = 25C V, VOLTAGE (VOLTS) 1.4 VBE(sat) @ IC/IB = 1000 1.2 VBE(on) @ VCE = 5.0 V 1.0 VCE(sat) @ IC/IB = 1000 5.0 7.0 10 50 mA 250 mA 500 mA 2.0 1.5 1.0 0.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (A) 500 1000 Figure 9. Collector Saturation Region 1.6 0.6 500 3.0 Figure 8. DC Current Gain 0.8 0.5 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) Figure 7. High Frequency Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 6. Capacitance 2.0 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 -1.0 -2.0 *APPLIES FOR IC/IB hFE/3.0 25C TO 125C *RVC FOR VCE(sat) -55C TO 25C -3.0 25C TO 125C -4.0 VB FOR VBE -5.0 -55C TO 25C -6.0 5.0 7.0 10 Figure 10. "On" Voltages 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) Figure 11. Temperature Coefficients http://onsemi.com 915 500 MPSW45 MPSW45A r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 D = 0.5 0.2 0.2 0.1 0.05 SINGLE PULSE 0.1 0.07 0.05 SINGLE PULSE 0.03 ZJC(t) = r(t) * RJCTJ(pk) - TC = P(pk) ZJC(t) ZJA(t) = r(t) * RJATJ(pk) - TA = P(pk) ZJA(t) 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 500 1.0k 2.0k 5.0k 10k Figure 12. Thermal Response IC, COLLECTOR CURRENT (mA) 1.0k 700 500 300 200 FIGURE A 1.0 ms TA = 25C tP TC = 25C 100 s PP 1.0 s 100 70 50 PP t1 30 20 10 0.4 0.6 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 1/f 1.0 2.0 4.0 6.0 10 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 13. Active Region Safe Operating Area t DUTYCYCLE t1f 1 tP PEAK PULSE POWER = PP 40 Design Note: Use of Transient Thermal Resistance Data http://onsemi.com 916 ON Semiconductor One Watt High Current Transistors MPSW51 MPSW51A* PNP Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage MPSW51 MPSW51A VCEO -30 -40 Vdc Collector-Base Voltage MPSW51 MPSW51A VCBO -40 -50 Vdc VEBO -5.0 Vdc Collector Current -- Continuous IC -1000 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 1.0 8.0 Watts mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 2.5 20 Watts mW/C -55 to +150 C Emitter-Base Voltage Operating and Storage Junction Temperature Range TJ, Tstg 1 2 CASE 29-10, STYLE 1 TO-92 (TO-226AE) COLLECTOR 3 2 BASE THERMAL CHARACTERISTICS Characteristic 3 Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 125 C/W Thermal Resistance, Junction to Case RJC 50 C/W 1 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Characteristic Min Max -30 -40 -- -- -40 -50 -- -- -5.0 -- -- -- -0.1 -0.1 -- -0.1 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(1) (IC = -1.0 mAdc, IB = 0) V(BR)CEO MPSW51 MPSW51A Collector-Base Breakdown Voltage (IC = -100 Adc, IE = 0) Vdc V(BR)CBO MPSW51 MPSW51A Emitter-Base Breakdown Voltage (IE = -100 Adc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = -30 Vdc, IE = 0) (VCB = -40 Vdc, IE = 0) Vdc Adc ICBO MPSW51 MPSW51A Emitter Cutoff Current (VEB = -3.0 Vdc, IC = 0) IEBO Vdc Adc 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 917 Publication Order Number: MPSW51/D MPSW51 MPSW51A ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Characteristic Min Max 55 60 50 -- -- -- Unit ON CHARACTERISTICS DC Current Gain (IC = -10 mAdc, VCE = -1.0 Vdc) (IC = -100 mAdc, VCE = -1.0 Vdc) (IC = -1000 mAdc, VCE = -1.0 Vdc) hFE -- Collector-Emitter Saturation Voltage (IC = -1000 mAdc, IB = -100 mAdc) VCE(sat) -- -0.7 Vdc Base-Emitter On Voltage (IC = -1000 mAdc, VCE = -1.0 Vdc) VBE(on) -- -1.2 Vdc fT 50 -- MHz Cobo -- 30 pF SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (IC = -50 mAdc, VCE = -10 Vdc, f = 20 MHz) Output Capacitance (VCB = -10 Vdc, IE = 0, f = 1.0 MHz) -1.0 VCE , COLLECTOR VOLTAGE (VOLTS) 100 70 VCE = -1.0 V TJ = 25C 50 20 -10 -20 -50 -100 -200 V, VOLTAGE (VOLTS) IC = IC = IC = IC = -100 -250 -500 mA -1000 mA mA mA -0.6 -0.4 -0.2 TJ = 25C 0 -0.01 -0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 Figure 2. Collector Saturation Region VBE(SAT) @ IC/IB = 10 VBE(ON) @ VCE = -1.0 V VCE(SAT) @ IC/IB = 10 0 -1.0 -2.0 IC = -50 mA Figure 1. DC Current Gain -0.4 -0.2 IC = -10 mA IB, BASE CURRENT (mA) TJ = 25C -0.6 -1000 -0.8 IC, COLLECTOR CURRENT (mA) -1.0 -0.8 -500 -5.0 -10 -20 -50 -100 -200 V B, TEMPERATURE COEFFICIENT (mV/ C) h FE , CURRENT GAIN 200 -500 -1000 -0.8 -1.2 -1.6 VB for VBE -2.0 -2.4 -2.8 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 3. "ON" Voltages Figure 4. Temperature Coefficient http://onsemi.com 918 -500 -1000 300 160 TJ = 25C C, CAPACITANCE (pF) 200 VCE = -10 V TJ = 25C f = 20 MHz 100 70 50 120 80 Cibo 40 Cobo 30 -10 -20 -50 -100 -200 -500 0 -1000 IC, COLLECTOR CURRENT (mA) Cobo Cibo -5.0 -1.0 Figure 5. Current Gain -- Bandwidth Product -1.0 k I C , COLLECTOR CURRENT (mA) f T , CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) MPSW51 MPSW51A -500 Figure 6. Capacitance 1.0 ms 1.0 ms 100 s TA = 25C TC = 25C -200 -100 -10 -15 -20 -2.0 -3.0 -4.0 VR, REVERSE VOLTAGE (VOLTS) DUTY CYCLE 10% MPSW51 MPSW51A -50 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT -20 -10 -1.0 -2.0 -5.0 -10 -20 -30 -40 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. Active Region -- Safe Operating Area http://onsemi.com 919 -25 -5.0 ON Semiconductor MPSW55 MPSW56 One Watt Amplifier Transistors PNP Silicon MPSW56 is a Preferred Device MAXIMUM RATINGS Rating Symbol MPSW55 MPSW56 Unit Collector-Emitter Voltage VCEO -60 -80 Vdc Collector-Base Voltage VCBO -60 -80 Vdc Emitter-Base Voltage VEBO -4.0 Vdc Collector Current -- Continuous IC -500 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 1.0 8.0 Watt mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 2.5 20 Watts mW/C TJ, Tstg -55 to +150 C Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 125 C/W Thermal Resistance, Junction to Case RJC 50 C/W Operating and Storage Junction Temperature Range 1 2 3 CASE 29-10, STYLE 1 TO-92 (TO-226AE) THERMAL CHARACTERISTICS COLLECTOR 3 2 BASE 1 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max -60 -80 -- -- -4.0 -- -- -- -0.5 -0.5 -- -- -0.1 -0.1 -- -0.1 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(1) (IC = -1.0 mAdc, IB = 0) V(BR)CEO MPSW55 MPSW56 Emitter-Base Breakdown Voltage (IE = -100 Adc, IC = 0) V(BR)EBO Collector Cutoff Current (VCE = -40 Vdc, IB = 0) (VCE = -60 Vdc, IB = 0) MPSW55 MPSW56 Collector Cutoff Current (VCB = -40 Vdc, IE = 0) (VCB = -60 Vdc, IE = 0) MPSW55 MPSW56 Vdc Adc ICES Adc ICBO Emitter Cutoff Current (VEB = -3.0 Vdc, IC = 0) IEBO Vdc Adc 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 920 Publication Order Number: MPSW55/D MPSW55 MPSW56 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Characteristic ON Min Max 100 50 -- -- Unit CHARACTERISTICS(1) DC Current Gain (IC = -50 mAdc, VCE = -1.0 Vdc) (IC = -250 mAdc, VCE = -1.0 Vdc) hFE -- Collector-Emitter Saturation Voltage (IC = -250 mAdc, IB = -10 mAdc) VCE(sat) -- -0.5 Vdc Base-Emitter On Voltage (IC = -250 mAdc, VCE = -5.0 Vdc) VBE(on) -- -1.2 Vdc fT 50 -- MHz Cobo -- 15 pF SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = -250 mAdc, VCE = -5.0 Vdc, f = 20 MHz) Output Capacitance (VCB = -10 Vdc, f = 1.0 MHz) 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 400 hFE, DC CURRENT GAIN TJ = 125C 200 VCE = -1.0 V 25C -55C 100 80 60 40 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) -50 -70 -100 -200 -300 -500 -1.0 -1.0 TJ = 25C TJ = 25C -0.8 -0.8 -0.6 IC = -10 mA -50 mA -100 mA -250 mA V, VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain -500 mA -0.4 -0.2 VBE(sat) @ IC/IB = 10 -0.6 VBE(on) @ VCE = -1.0 V -0.4 -0.2 VCE(sat) @ IC/IB = 10 0 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 IB, BASE CURRENT (mA) -10 -20 0 -0.5 -1.0 -50 Figure 2. Collector Saturation Region -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) Figure 3. "On" Voltages http://onsemi.com 921 -500 MPSW55 MPSW56 100 VB, TEMPERATURE COEFFICIENT (mV/C) -0.8 70 -1.2 C, CAPACITANCE (pF) 50 -1.6 VB for VBE -2.0 30 20 10 -2.4 Cobo 7.0 -2.8 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) 5.0 -0.1 -500 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Base-Emitter Temperature Coefficient -50 -100 Figure 5. Capacitance 200 VCE = -2.0 V TJ = 25C IC, COLLECTOR CURRENT (mA) f, T CURRENT-GAIN BANDWIDTH PRODUCT (MHz) TJ = 25C Cibo 100 DUTY CYCLE 10% -2 k 1.0 ms -1 k 100 s -500 70 -200 50 -100 30 -50 -20 20 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 IC, COLLECTOR CURRENT (mA) -10 -1.0 -200 Figure 6. Current-Gain -- Bandwidth Product TA = 25C TC = 25C dc 1.0 s dc CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT MPSW55 MPSW56 -2.0 -5.0 -10 -20 -60 -80 -100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. Active Region -- Safe Operating Area http://onsemi.com 922 ON Semiconductor MPSW63 MPSW64 * One Watt Darlington Transistors *ON Semiconductor Preferred Device PNP Silicon MAXIMUM RATINGS Symbol MPSW63 MPSW64 Unit Collector-Emitter Voltage VCES -30 Vdc Collector-Base Voltage VCBO -30 Vdc Emitter-Base Voltage VEBO -10 Vdc Collector Current -- Continuous IC -500 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 1.0 8.0 Watt mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 2.5 20 Watts mW/C TJ, Tstg -55 to +150 C Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 125 C/W Thermal Resistance, Junction to Case RJC 50 C/W Rating Operating and Storage Junction Temperature Range 1 3 CASE 29-10, STYLE 1 TO-92 (TO-226AE) COLLECTOR 3 THERMAL CHARACTERISTICS Characteristic 2 BASE 2 EMITTER 1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)CES -30 -- Vdc Collector Cutoff Current (VCB = -30 Vdc, IE = 0) ICBO -- -100 nAdc Emitter Cutoff Current (VEB = -10 Vdc, IC = 0) IEBO -- -100 nAdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = -100 Adc, VBE = 0) Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 923 Publication Order Number: MPSW63/D MPSW63 MPSW64 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max MPSW63 MPSW64 5,000 10,000 -- -- MPSW63 MPSW64 10,000 20,000 -- -- Unit ON CHARACTERISTICS(1) DC Current Gain (IC = -10 mAdc, VCE = -5.0 Vdc) hFE (IC = -100 mAdc, VCE = -5.0 Vdc) -- Collector-Emitter Saturation Voltage (IC = -100 mAdc, IB = -0.1 mAdc) VCE(sat) -- -1.5 Vdc Base-Emitter On Voltage (IC = -100 mAdc, VCE = -5.0 Vdc) VBE(on) -- -2.0 Vdc fT 125 -- MHz SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product(2) (IC = -10 mAdc, VCE = -5.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 2. fT = |hfe| * ftest. TYPICAL ELECTRICAL CHARACTERISTICS h FE, DC CURRENT GAIN (X1.0 k) 200 TJ = 125C 100 70 50 -10 V 25C 30 VCE = -2.0 V 20 -5.0 V 10 7.0 5.0 3.0 2.0 -0.3 -55C -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 IC, COLLECTOR CURRENT (mA) -2.0 TJ = 25C V, VOLTAGE (VOLTS) -1.6 VBE(sat) @ IC/IB = 100 -1.2 -0.8 VBE(on) @ VCE = -5.0 V VCE(sat) @ IC/IB = 1000 IC/IB = 100 -0.4 0 -0.3 -0.5 -1.0 -3.0 -5.0 -10 -30 -50 -100 -300 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain -2.0 TJ = 25C -1.8 -1.6 -50 mA -100 mA -175 mA -1.4 -300 mA -1.2 -1.0 -0.8 IC = -10 mA -0.6 -0.1 -0.3 -1.0 -3.0 -10 -30 -100 -300 -1 k -3 k -10 k IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (A) Figure 2. "ON" Voltage Figure 3. Collector Saturation Region http://onsemi.com 924 +4.0 +3.0 +25C TO +125C +2.0 +1.0 -50C TO +25C 0 -1.0 -2.0 *RVC FOR VCE(sat) -3.0 -4.0 -50C TO +25C RVB FOR VBE -5.0 -0.3 -0.5 -1.0 20 15 C, CAPACITANCE (pF) *APPLIES FOR IC/IB hFE/100 10 +25C TO +125C -2.0 -5.0 -10 -50 -100 -20 -300 f T , CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) +5.0 VCE = -20 V 200 100 -10 V 60 -5.0 V 40 30 20 -0.3 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -300 Figure 4. Temperature Coefficients Figure 5. Current-Gain -- Bandwidth Product -2 k Cibo 7.0 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT -1 k 100 s 1.0 mS -500 TJ = 25C f = 1.0 MHz 1.0 s -0.5 -1.0 -2.0 -5.0 -10 DUTY CYCLE 10% -100 -1.5 -2.0 -20 -30 TC = 25C TA = 25C -200 3.0 2.0 -0.1 -0.2 TJ = 25C 400 300 IC, COLLECTOR CURRENT (mA) Cobo 5.0 600 IC, COLLECTOR CURRENT (mA) IC , COLLECTOR CURRENT (mA) R V , TEMPERATURE COEFFICIENT (mV/ C) MPSW63 MPSW64 -5.0 -10 -20 VR, REVERSE VOLTAGE (VOLTS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 6. Capacitance Figure 7. Active Region, Safe Operating Area http://onsemi.com 925 -30 ON Semiconductor MPSW92 One Watt High Voltage Transistor ON Semiconductor Preferred Device PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO -300 Vdc Collector-Base Voltage VCBO -300 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current -- Continuous IC -500 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 1.0 8.0 Watt mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 2.5 20 Watts mW/C TJ, Tstg -55 to +150 C Operating and Storage Junction Temperature Range 1 3 CASE 29-10, STYLE 1 TO-92 (TO-226AE) COLLECTOR 3 2 BASE THERMAL CHARACTERISTICS Characteristic 2 Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 125 C/W Thermal Resistance, Junction to Case RJC 50 C/W 1 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage(1) (IC = -1.0 mAdc, IB = 0) V(BR)CEO -300 -- Vdc Collector-Base Breakdown Voltage (IC = -100 Adc, IE = 0) V(BR)CBO -300 -- Vdc Emitter-Base Breakdown Voltage (IE = -100 Adc, IC = 0) V(BR)EBO -5.0 -- Vdc Collector Cutoff Current (VCB = -200 Vdc, IE = 0) ICBO -- -0.25 Adc Emitter Cutoff Current (VEB = -3.0 Vdc, IC = 0) IEBO -- -0.1 Adc OFF CHARACTERISTICS 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 2 926 Publication Order Number: MPSW92/D MPSW92 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max 25 40 25 -- -- -- Unit ON CHARACTERISTICS(1) DC Current Gain (IC = -1.0 mAdc, VCE = -10 Vdc) (IC = -10 mAdc, VCE = -10 Vdc) (IC = -30 mAdc, VCE = -10 Vdc) hFE -- Collector-Emitter Saturation Voltage (IC = -20 mAdc, IB = -2.0 mAdc) VCE(sat) -- -0.5 Vdc Base-Emitter Saturation Voltage (IC = -20 mAdc, IB = -2.0 mAdc) VBE(sat) -- -0.9 Vdc fT 50 -- MHz Ccb -- 6.0 pF SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = -10 mAdc, VCE = -20 Vdc, f = 20 MHz) Collector-Base Capacitance (VCB = -20 Vdc, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. Figure 8. http://onsemi.com 927 MPSW92 300 hFE , DC CURRENT GAIN VCE = 10 Vdc TJ = +125C 250 200 25C 150 -55C 100 50 0 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) C, CAPACITANCE (pF) 100 f, T CURRENT-GAIN BANDWIDTH (MHz) Figure 1. DC Current Gain Cib @ 1MHz 10 Ccb @ 1MHz 1.0 0.1 0.1 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) 150 130 110 90 70 50 30 10 1000 TJ = 25C VCE = 20 Vdc F = 20 MHz 1 Figure 2. Capacitance 3 5 11 13 15 7 9 IC, COLLECTOR CURRENT (mA) 17 19 21 Figure 3. Current-Gain -- Bandwidth 1.4 V, VOLTAGE (VOLTS) 1.2 VCE(sat) @ 25C, IC/IB = 10 VCE(sat) @ 125C, IC/IB = 10 VCE(sat) @ -55C, IC/IB = 10 VBE(sat) @ 25C, IC/IB = 10 1.0 0.8 VBE(sat) @ 125C, IC/IB = 10 VBE(sat) @ -55C, IC/IB = 10 VBE(on) @ 25C, VCE = 10 V VBE(on) @ 125C, VCE = 10 V VBE(on) @ -55C, VCE = 10 V 0.6 0.4 0.2 0.0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100 Figure 4. "ON" Voltages http://onsemi.com 928 MSA1162GT1, MSA1162YT1 General Purpose Amplifier Transistors PNP Surface Mount * Moisture Sensitivity Level: 1 * ESD Rating: TBD http://onsemi.com MAXIMUM RATINGS (TA = 25C) COLLECTOR 3 Rating Symbol Value Unit Collector-Base Voltage V(BR)CBO 60 Vdc Collector-Emitter Voltage V(BR)CEO 50 Vdc Emitter-Base Voltage V(BR)EBO 7.0 Vdc IC 100 mAdc IC(P) 200 mAdc Symbol Max Unit Power Dissipation PD 200 mW Junction Temperature TJ 150 C Storage Temperature Tstg -55 to +150 C Collector Current - Continuous Collector Current - Peak 2 BASE THERMAL CHARACTERISTICS Characteristic 1 EMITTER MARKING DIAGRAM 3 2 62x M 1 SC-59 CASE 318D STYLE 1 62x = Specific Device Code x = G or Y M = Date Code ORDERING INFORMATION Device Package Shipping MSA1162GT1 SC-59 3000/Tape & Reel MSA1162YT1 SC-59 3000/Tape & Reel The "T1" suffix refers to a 7 inch reel. ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) V(BR)CEO 50 - Vdc Collector-Base Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO 60 - Vdc Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO 7.0 - Vdc Collector-Base Cutoff Current (VCB = 45 Vdc, IE = 0) ICBO - 0.1 Adc Collector-Emitter Cutoff Current (VCE = 10 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0, TA = 80C) ICEO - - - 0.1 2.0 1.0 Adc nAdc mAdc 120 200 240 400 - 0.5 DC Current Gain (Note 1.) (VCE = 6.0 Vdc, IC = 2.0 mAdc) hFE MSA1162YT1 MSA1162GT1 Collector-Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) VCE(sat) - Vdc 1. Pulse Test: Pulse Width 300 s, D.C. 2%. Semiconductor Components Industries, LLC, 2001 February, 2001 - Rev. 0 929 Publication Order Number: MSA1162GT1/D ON Semiconductor MSB1218A-RT1 PNP Silicon General Purpose Amplifier Transistor ON Semiconductor Preferred Devices This PNP Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. * High hFE, 210-460 * Low VCE(sat), < 0.5 V * Available in 8 mm, 7-inch/3000 Unit Tape and Reel 3 1 2 CASE 419-04, STYLE 3 SC-70/SOT-323 MAXIMUM RATINGS (TA = 25C) Rating Symbol Value Unit Collector-Base Voltage V(BR)CBO 45 Vdc Collector-Emitter Voltage V(BR)CEO 45 Vdc Emitter-Base Voltage V(BR)EBO 7.0 Vdc IC 100 mAdc IC(P) 200 mAdc Collector Current -- Continuous Collector Current -- Peak COLLECTOR 3 DEVICE MARKING 1 BASE MSB1218A-RT1 = BR 2 EMITTER THERMAL CHARACTERISTICS Rating Power Symbol Max Unit PD 150 mW Dissipation(1) Junction Temperature TJ 150 C Storage Temperature Range Tstg -55 ~ +150 C ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) V(BR)CEO 45 -- Vdc Collector-Base Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO 45 -- Vdc Emitter-Base Breakdown Voltage (IE = 10 Adc, IE = 0) V(BR)EBO 7.0 -- Vdc Collector-Base Cutoff Current (VCB = 20 Vdc, IE = 0) ICBO -- 0.1 A Collector-Emitter Cutoff Current (VCE = 10 Vdc, IB = 0) ICEO -- 100 A DC Current Gain(2) (VCE = 10 Vdc, IC = 2.0 mAdc) hFE1 210 340 -- VCE(sat) -- 0.5 Vdc Collector-Emitter Saturation Voltage(2) (IC = 100 mAdc, IB = 10 mAdc) 1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. 2. Pulse Test: Pulse Width 300 s, D.C. 2%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 3 930 Publication Order Number: MSB1218A-RT1/D 250 TA = 25C IC, COLLECTOR CURRENT (mA) PD , POWER DISSIPATION (MILLIWATTS) MSB1218A-RT1 200 150 100 RJA = 833C/W 50 0 -50 0 50 100 60 150 100 30 IB = 50 A 0 3 6 12 9 VCE, COLLECTOR VOLTAGE (V) Figure 1. Derating Curve Figure 2. IC - VCE VCE , COLLECTOREMITTER VOLTAGE (V) VCE = 10 V TA = 25C TA = -25C 1 10 TA = 25C 1.5 1 0.5 0 0.01 100 0.1 1 10 IB, BASE CURRENT (mA) Figure 3. DC Current Gain Figure 4. Collector Saturation Region 900 800 700 600 500 400 300 TA = 25C VCE = 5 V 200 100 0 0.2 0.5 1 5 10 20 40 60 80 IC, COLLECTOR CURRENT (mA) Figure 5. On Voltage http://onsemi.com 931 15 2 IC, COLLECTOR CURRENT (mA) COLLECTOR VOLTAGE (mV) DC CURRENT GAIN 300 A 250 200 TA, AMBIENT TEMPERATURE (C) TA = 75C 10 0.1 90 0 150 1000 100 120 100 150 200 100 13 14 12 12 Cob, CAPACITANCE (pF) Cib, INPUT CAPACITANCE (pF) MSB1218A-RT1 11 10 9 8 7 6 10 8 6 4 2 0 1 2 3 0 4 0 VEB (V) 10 20 VCB (V) Figure 6. Capacitance Figure 7. Capacitance http://onsemi.com 932 30 40 ON Semiconductor PNP General Purpose Amplifier Transistor Surface Mount MSB709-RT1 ON Semiconductor Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER CASE 318D-04, STYLE 1 SC-59 MAXIMUM RATINGS (TA = 25C) Rating Symbol Value Unit Collector-Base Voltage V(BR)CBO -60 Vdc Collector-Emitter Voltage V(BR)CEO -45 Vdc Emitter-Base Voltage V(BR)EBO -7.0 Vdc Collector Current -- Continuous Collector Current -- Peak IC -100 mAdc IC(P) -200 mAdc Symbol Max Unit PD 200 mW THERMAL CHARACTERISTICS Characteristic Power Dissipation Junction Temperature TJ 150 C Storage Temperature Tstg -55 ~ +150 C ELECTRICAL CHARACTERISTICS (TA = 25C) Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC = -2.0 mAdc, IB = 0) V(BR)CEO -45 -- Vdc Collector-Base Breakdown Voltage (IC = -10 Adc, IE = 0) V(BR)CBO -60 -- Vdc Emitter-Base Breakdown Voltage (IE = -10 Adc, IE = 0) Characteristic V(BR)EBO -7.0 -- Vdc Collector-Base Cutoff Current (VCB = -45 Vdc, IE = 0) ICBO -- -0.1 Adc Collector-Emitter Cutoff Current (VCE = -10 Vdc, IB = 0) ICEO -- -100 nAdc DC Current (VCE = -10 Vdc, IC = -2.0 mAdc) hFE1 210 340 -- Collector-Emitter Saturation Voltage (IC = -100 mAdc, IB = -10 mAdc) VCE(sat) -- -0.5 Vdc Gain(1) 1. Pulse Test: Pulse Width 300 s, D.C. 2%. DEVICE MARKING ARX The "X" represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 September, 2001 - Rev. 4 933 Publication Order Number: MSB709-RT1/D ON Semiconductor PNP General Purpose Amplifier Transistor Surface Mount MSB710-RT1 ON Semiconductor Preferred Device MAXIMUM RATINGS (TA = 25C) Rating Symbol Value Unit Collector-Base Voltage V(BR)CBO -60 Vdc Collector-Emitter Voltage V(BR)CEO -50 Vdc Emitter-Base Voltage V(BR)EBO -7.0 Vdc IC -500 mAdc IC(P) -1.0 Adc 3 Collector Current -- Continuous Collector Current -- Peak 2 1 CASE 318D-04, STYLE 1 SC-59 COLLECTOR 3 THERMAL CHARACTERISTICS Characteristic Power Dissipation Symbol Max Unit PD 200 mW Junction Temperature TJ 150 C Storage Temperature Tstg -55 ~ +150 C DEVICE MARKING 2 BASE 1 EMITTER CRX The "X" represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured. ELECTRICAL CHARACTERISTICS (TA = 25C) Characteristic Symbol Min Max Unit -50 -- Vdc Collector-Emitter Breakdown Voltage (IC = -10 mAdc, IB = 0) V(BR)CEO Collector-Base Breakdown Voltage (IC = -10 Adc, IE = 0) V(BR)CBO -60 -- Vdc Emitter-Base Breakdown Voltage (IE = -10 Adc, IC = 0) V(BR)EBO -7.0 -- Vdc (VCB = -20 Vdc, IE = 0) ICBO -- -0.1 Adc hFE1 hFE2 120 40 240 -- Collector-Base Cutoff Current Gain(1) DC Current (VCE = -10 Vdc, IC = -150 mAdc) (VCE = -10 Vdc, IC = 500 mAdc) -- Collector-Emitter Saturation Voltage (IC = -300 mAdc, IB = -30 mAdc) VCE(sat) -- -0.6 Vdc Collector-Base Saturation Voltage (IC = -300 mAdc, IB = -30 mAdc) VBE(sat) -- -1.5 Vdc Cob -- 15 pF Output Capacitance (VCB = -10 Vdc, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width 300 s, D.C. 2%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 934 Publication Order Number: MSB710-RT1/D MSB92WT1, MSB92AWT1 Preferred Device Product Preview PNP Silicon General Purpose High Voltage Transistor http://onsemi.com This PNP Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. DEVICE MARKINGS MSB92WT1 3 2Dy MAXIMUM RATINGS (TA = 25C) Symbol Value Unit Collector-Base Voltage V(BR)CBO -300 Vdc Collector-Emitter Voltage V(BR)CEO -300 Vdc Emitter-Base Voltage V(BR)EBO -5.0 Vdc IC 500 mAdc ESD MBM16,000, MM2,000 V Rating Collector Current - Continuous Electrostatic Discharge 1 2 y = Date Code SC-70/SOT-323 CASE 419 STYLE 3 MSB92AWT1 D2y y = Date Code THERMAL CHARACTERISTICS Symbol Max Unit Power Dissipation (Note 1.) Rating PD 150 mW Junction Temperature TJ 150 C Storage Temperature Range Tstg -55 ~ +150 C COLLECTOR 3 1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. 1 BASE 2 EMITTER ORDERING INFORMATION Device Package Shipping MSB92WT1 SC-70/ SOT-323 8mm Tape & Reel (7-inch/3000 Unit) MSB92AWT1 SC-70/ SOT-323 8mm Tape & Reel (7-inch/3000 Unit) Preferred devices are recommended choices for future use and best overall value. This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. Semiconductor Components Industries, LLC, 2000 September, 2000 - Rev. 3 935 Publication Order Number: MSB92WT1/D MSB92WT1, MSB92AWT1 ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC = -1.0 mAdc, IB = 0) V(BR)CEO -300 - Vdc Collector-Base Breakdown Voltage (IC = -100 Adc, IE = 0) V(BR)CBO -300 - Vdc Emitter-Base Breakdown Voltage (IE = -100 Adc, IE = 0) V(BR)EBO -5.0 - Vdc Collector-Base Cutoff Current (VCB = -200 Vdc, IE = 0) ICBO - -0.25 A Emitter-Base Cutoff Current (VEB = -3.0 Vdc, IB = 0) IEBO - -0.1 A DC Current Gain (Note 2.) MSB92WT1: (VCE = -10 Vdc, IC = -1.0 mAdc) MSB92AWT1: (VCE = -10 Vdc, IC = -1.0 mAdc) (VCE = -10 Vdc, IC = -10 mAdc) (VCE = -10 Vdc, IC = -30 mAdc) hFE1 hFE1 hFE2 hFE3 25 120 40 25 - 200 - - Collector-Emitter Saturation Voltage (Note 2.) (IC = -20 mAdc, IB = -2.0 mAdc) VCE(sat) - -0.5 Vdc Base-Emitter Saturation Voltage (IC = -20 mAdc, IB = -2.0 mAdc) VBE(sat) - -0.9 Vdc fT 50 - MHz Ccb - 6.0 pF - SMALL SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (IC = -10 mAdc, VCE = -20 Vdc, f = 20 MHz) Collector-Base Capacitance (VCB = -20 Vdc, IE = 0, f = 1.0 MHz) 2. Pulse Test: Pulse Width 300 s, D.C. 2%. http://onsemi.com 936 ON Semiconductor MSC2295-BT1 MSC2295-CT1 NPN RF Amplifier Transistors Surface Mount ON Semiconductor Preferred Devices 3 2 1 MAXIMUM RATINGS (TA = 25C) Symbol Value Unit Collector-Base Voltage V(BR)CBO 30 Vdc Collector-Emitter Voltage V(BR)CEO 20 Vdc Emitter-Base Voltage V(BR)EBO 5.0 Vdc IC 30 mAdc Symbol Max Unit Power Dissipation PD 200 mW Junction Temperature TJ 150 C Storage Temperature Tstg -55 ~ +150 C Rating Collector Current -- Continuous CASE 318D-04, STYLE 1 SC-59 COLLECTOR 3 THERMAL CHARACTERISTICS Characteristic 2 BASE 1 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C) Characteristic Symbol Min Max Unit ICBO -- 0.1 Adc 70 110 140 220 fT 150 -- MHz Cre -- 1.5 pF Collector-Base Cutoff Current (VCB = 10 Vdc, IE = 0) DC Current Gain(1) (VCB = 10 Vdc, IC = -1.0 mAdc) hFE MSC2295-BT1 MSC2295-CT1 Collector-Gain -- Bandwidth Product (VCB = 10 Vdc, IE = -1.0 mAdc) Reverse Transistor Capacitance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 10.7 MHz) -- 1. Pulse Test: Pulse Width 300 s, D.C. 2%. DEVICE MARKING Marking Symbol VBX VCX MSC2295-BT1 MSC2295-CT1 The "X" represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 937 Publication Order Number: MSC2295-BT1/D MSC2712GT1 General Purpose Amplifier Transistor NPN Surface Mount * Moisture Sensitivity Level: 1 * ESD Rating: TBD http://onsemi.com MAXIMUM RATINGS (TA = 25C) COLLECTOR 3 Rating Symbol Value Unit Collector-Base Voltage V(BR)CBO 60 Vdc Collector-Emitter Voltage V(BR)CEO 50 Vdc Emitter-Base Voltage V(BR)EBO 7.0 Vdc IC 100 mAdc IC(P) 200 mAdc Collector Current - Continuous Collector Current - Peak 2 BASE 1 EMITTER THERMAL CHARACTERISTICS Symbol Max Unit Power Dissipation Characteristic PD 200 mW Junction Temperature TJ 150 C Storage Temperature Tstg -55 to +150 C MARKING DIAGRAM 3 2 1 12G M SC-59 CASE 318D STYLE 1 12G = Specific Device Code M = Date Code ORDERING INFORMATION Device Package Shipping MSC2712GT1 SC-59 3000/Tape & Reel The "T1" suffix refers to a 7 inch reel. ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) V(BR)CEO 50 - Vdc Collector-Base Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO 60 - Vdc Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO 7.0 - Vdc Collector-Base Cutoff Current (VCB = 45 Vdc, IE = 0) ICBO - 0.1 Adc Collector-Emitter Cutoff Current (VCE = 10 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0, TA = 80C) ICEO - - - 0.1 2.0 1.0 Adc nAdc mAdc DC Current Gain (Note 1.) (VCE = 6.0 Vdc, IC = 2.0 mAdc) hFE 200 400 - 0.5 Characteristic Collector-Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) VCE(sat) - Vdc 1. Pulse Test: Pulse Width 300 s, D.C. 2%. Semiconductor Components Industries, LLC, 2001 February, 2001 - Rev. 0 938 Publication Order Number: MSC2712GT1/D ON Semiconductor MSC3130T1 NPN RF Amplifier Transistor Surface Mount ON Semiconductor Preferred Device MAXIMUM RATINGS (TA = 25C) Symbol Value Unit Collector-Base Voltage VCBO 15 Vdc Collector-Emitter Voltage VCEO 10 Vdc Emitter-Base Voltage VEBO 3.0 Vdc IC 50 mAdc Symbol Max Unit Power Dissipation PD 200 mW Junction Temperature TJ 150 C Storage Temperature Tstg -55 ~ +150 C Rating Collector Current -- Continuous 3 2 1 CASE 318D-04, STYLE 1 SC-59 THERMAL CHARACTERISTICS Characteristic COLLECTOR 3 2 BASE 1 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C) Symbol Min Max Unit Collector Cutoff Current (VCB = 10 Vdc, IE = 0) ICBO -- 1.0 Adc Collector-Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) VCEO 10 -- Vdc Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) VEBO 3.0 -- Vdc DC Current Gain(1) (VCE = 4.0 Vdc, IC = 5.0 mAdc) hFE 75 400 -- Collector-Emitter Saturation Voltage (IC = 20 mAdc, IB = 4.0 mAdc) VCE(sat) -- 0.5 Vdc Current-Gain -- Bandwidth Product (VCB = 4.0 Vdc, IE = -5.0 mAdc) fT 1.4 2.5 GHz Characteristic 1. Pulse Test: Pulse Width 300 s, D.C. 2%. DEVICE MARKING Marking Symbol 1SX The "X" represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 939 Publication Order Number: MSC3130T1/D MSC3930-BT1 Preferred Device NPN RF Amplifier Transistor http://onsemi.com MAXIMUM RATINGS (TA = 25C) Rating Symbol Value Unit Collector-Base Voltage V(BR)CBO 30 Vdc Collector-Emitter Voltage V(BR)CEO 20 Vdc Emitter-Base Voltage V(BR)EBO 5.0 Vdc IC 30 mAdc Collector Current -- Continuous COLLECTOR 3 2 BASE THERMAL CHARACTERISTICS Symbol Max Unit Power Dissipation Characteristic PD 200 mW Junction Temperature TJ 150 C Storage Temperature Tstg -55 ~ +150 C 1 EMITTER MARKING DIAGRAM 3 1 2 ELECTRICAL CHARACTERISTICS (TA = 25C) Symbol Min Max Unit Collector-Base Cutoff Current (VCB = 10 Vdc, IE = 0) ICBO -- 0.1 Adc DC Current Gain(1) (VCB = 10 Vdc, IC = -1.0 mAdc) hFE Collector-Gain -- Bandwidth Product (VCB = 10 Vdc, IE = -1.0 mAdc) Characteristic Reverse Transistor Capacitance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 10.7 MHz) VBX SOT-323/SC-70 CASE 419 STYLE 3 X = Date Code ORDERING INFORMATION -- 70 140 fT 150 -- MHz Cre -- 1.5 pF Device Package Shipping MSC3930-BT1 SC-70 3000/Tape & Reel Preferred devices are recommended choices for future use and best overall value. 1. Pulse Test: Pulse Width 300 s, D.C. 2%. Semiconductor Components Industries, LLC, 2001 October, 2001 - Rev. 2 940 Publication Order Number: MSC3930-BT1/D ON Semiconductor MSD1328-RT1 MSD1328-ST1 NPN Low Voltage Output Amplifiers - Surface Mount ON Semiconductor Preferred Device 3 MAXIMUM RATINGS (TA = 25C) Symbol Value Unit Collector-Base Voltage V(BR)CBO 25 Vdc Collector-Emitter Voltage V(BR)CEO 20 Vdc Emitter-Base Voltage V(BR)EBO 12 Vdc Rating Collector Current -- Continuous IC 500 mAdc IC(P) 1000 mAdc Symbol Max Unit Power Dissipation PD 200 mW Junction Temperature TJ 150 C Storage Temperature Tstg -55 ~ +150 C Collector Current -- Peak 2 1 CASE 318D-04, STYLE 1 SC-59 COLLECTOR 3 THERMAL CHARACTERISTICS Characteristic 2 BASE 1 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C) Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 20 -- Vdc Collector-Base Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO 25 -- Vdc Emitter-Base Breakdown Voltage (IE = 10 Adc, IE = 0) V(BR)EBO 12 -- Vdc ICBO -- 0.1 Adc hFE 200 300 350 500 -- Collector-Emitter Saturation Voltage (IC = 500 mAdc, IB = 20 mAdc) VCE(sat) -- 0.4 Vdc Base-Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) VBE(sat) -- 1.2 Vdc Characteristic Collector-Base Cutoff Current (VCB = 25 Vdc, IE = 0) DC Current Gain(1) (VCE = 2.0 Vdc, IC = 500 mAdc) MSD1328-RT1 MSD1328-ST1 1. Pulse Test: Pulse Width 300 s, D.C. 2%. DEVICE MARKING Marking Symbols 1DRX 1DS X MSD1328-RT1 MSD1328-ST1 The "X" represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 October, 2001 - Rev. 2 941 Publication Order Number: MSD1328-RT1/D MSD1819A-RT1 Preferred Device General Purpose Amplifier Transistor NPN Silicon Surface Mount This NPN Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. * High hFE, 210-460 * Low VCE(sat), < 0.5 V * Available in 8 mm, 7-inch/3000 Unit Tape and Reel * Moisture Sensitivity Level 1 * ESD Protection: Human Body Model > 4000 V ESD Protection: Machine Model > 400 V http://onsemi.com COLLECTOR 3 1 BASE MAXIMUM RATINGS (TA = 25C) Rating 2 EMITTER Symbol Value Unit Collector-Base Voltage V(BR)CBO 60 Vdc Collector-Emitter Voltage V(BR)CEO 50 Vdc Emitter-Base Voltage V(BR)EBO 7.0 Vdc IC 100 mAdc 2 SC-70 CASE 419 STYLE 3 Collector Current - Continuous Collector Current - Peak IC(P) 200 mAdc Symbol Max Unit Power Dissipation (Note 1.) PD 150 mW Junction Temperature TJ 150 C Storage Temperature Range Tstg -55 ~ +150 C 3 1 THERMAL CHARACTERISTICS Characteristic MARKING DIAGRAM ZR M 1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. ZR = Specific Device Code M = Date Code ORDERING INFORMATION Device Package Shipping MSD1819A-RT1 SC-70 3000/Tape & Reel MSD1819A-RT3 SC-70 10,000/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 January, 2001 - Rev. 3 942 Publication Order Number: MSD1819A-RT1/D MSD1819A-RT1 ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) V(BR)CEO 50 - Vdc Collector-Base Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO 60 - Vdc Emitter-Base Breakdown Voltage (IE = 10 Adc, IE = 0) V(BR)EBO 7.0 - Vdc Collector-Base Cutoff Current (VCB = 20 Vdc, IE = 0) ICBO - 0.1 A Collector-Emitter Cutoff Current (VCE = 10 Vdc, IB = 0) ICEO - 0.1 A DC Current Gain (Note 2.) (VCE = 10 Vdc, IC = 2.0 mAdc) (VCE = 2.0 Vdc, IC = 100 mAdc) hFE1 hFE2 210 90 340 - VCE(sat) - 0.5 - Collector-Emitter Saturation Voltage (Note 2.) (IC = 100 mAdc, IB = 10 mAdc) Vdc 250 60 IC, COLLECTOR CURRENT (mA) PD , POWER DISSIPATION (MILLIWATTS) 2. Pulse Test: Pulse Width 300 s, D.C. 2%. 200 150 100 50 0 -50 RJA = 833C/W 0 50 100 TA, AMBIENT TEMPERATURE (C) 140 A 120 A 40 100 A 30 80 A 20 60 A 10 IB = 20 A 40 A 0 150 160 A TA = 25C 50 0 2 4 6 VCE, COLLECTOR VOLTAGE (V) Figure 1. Derating Curve Figure 2. IC - VCE DC CURRENT GAIN TA = 25C VCE , COLLECTOREMITTER VOLTAGE (V) 1000 TA = 75C VCE = 10 V TA = -25C 100 10 0.1 8 2 TA = 25C 1.5 1 0.5 0 0.01 1 10 100 IC, COLLECTOR CURRENT (mA) Figure 3. DC Current Gain 0.1 1 IB, BASE CURRENT (mA) 10 Figure 4. Collector Saturation Region http://onsemi.com 943 100 MSD1819A-RT1 900 COLLECTOR VOLTAGE (mV) 800 700 600 500 400 TA = 25C VCE = 5 V 300 200 100 0 0.2 0.5 1 5 10 20 40 60 80 100 150 200 IC, COLLECTOR CURRENT (mA) Figure 5. On Voltage 7 6 18 Cob, CAPACITANCE (pF) Cib, INPUT CAPACITANCE (pF) 20 16 14 12 10 5 4 3 2 0 1 2 3 1 4 0 10 20 VEB (V) VCB (V) Figure 6. Capacitance Figure 7. Capacitance http://onsemi.com 944 30 40 MSD2714AT1 Preferred Device VHF/UHF Transistor NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Max Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc Emitter-Base Voltage VEBO 3.0 Vdc Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board TA = 25C Derate above 25C PD (1) 225 mW 1.8 mW/C Thermal Resistance, Junction to Ambient RJA 556 C/W Total Device Dissipation Alumina Substrate, TA = 25C Derate above 25C PD (2) 300 mW 2.4 mW/C Thermal Resistance, Junction to Ambient RJA 625 C/W Junction and Storage Temperature Range TJ, Tstg -55 to +150 C COLLECTOR 3 2 BASE THERMAL CHARACTERISTICS 1 EMITTER 3 2 1 CASE 318D SC-59 STYLE 1 (1) FR-5 = 1.0 X 0.75 X 0.062 in. (2) Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina DEVICE MARKING 14A ORDERING INFORMATION Device MSD2714AT1 Package Shipping SC-59 TBD Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 March, 2000 - Rev. 0 945 Publication Order Number: MSD2714AT1/D MSD2714AT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 25 -- -- 30 -- -- 3.0 -- -- -- -- 500 -- -- 500 90 -- 180 -- -- 0.95 fT 650 -- -- MHz Collector-Base Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Ccb -- -- 0.7 pF Common-Base Feedback Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Crb -- -- 0.65 pF rbCc -- -- 9.0 ps OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO Collector-Base Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 35 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = 3.5 Vdc, IC = 0) IEBO Vdc Vdc Vdc nAdc nAdc ON CHARACTERISTICS DC Current Gain (IC = 1.0 mAdc, VCE = 6.0 Vdc) hFE Base-Emitter On Voltage (IC = 4.0 mAdc, VCE = 10 Vdc) VBE -- Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 4.0 mAdc, VCE = 10 Vdc, f = 100 MHz) Collector Base Time Constant (IC = 4.0 mAdc, VCB = 10 Vdc, f = 31.8 MHz) http://onsemi.com 946 MSD2714AT1 TYPICAL CHARACTERISTICS COMMON-BASE y PARAMETERS versus FREQUENCY (VCB = 10 Vdc, IC = 4.0 mAdc, TA = 25C) yib, INPUT ADMITTANCE 0 70 gib -10 60 50 jb ib (mmhos) y ib , INPUT ADMITTANCE (mmhos) 80 -bib 40 30 -20 1000 MHz -30 700 -40 20 10 0 400 -50 100 200 300 400 500 f, FREQUENCY (MHz) 700 -60 1000 0 20 10 30 Figure 1. Rectangular Form 200 40 50 gib (mmhos) 60 100 80 70 Figure 2. Polar Form 70 60 bfb 60 50 50 40 -gfb 30 400 200 jb fb (mmhos) y ib , FORWARD TRANSFER ADMITTANCE (mmhos) yfb, FORWARD TRANSFER ADMITTANCE 20 10 600 100 700 40 30 1000 MHz 0 -10 20 -20 -30 100 200 300 400 500 f, FREQUENCY (MHz) 700 1000 10 70 Figure 3. Rectangular Form 60 50 40 10 30 20 gfb (mmhos) 0 Figure 4. Polar Form http://onsemi.com 947 -10 -20 -30 MSD2714AT1 TYPICAL CHARACTERISTICS COMMON-BASE y PARAMETERS versus FREQUENCY (VCB = 10 Vdc, IC = 4.0 mAdc, TA = 25C) 0 5.0 100 4.0 3.0 400 -2.0 -brb -brb 2.0 -3.0 700 MPS H10 1.0 -4.0 -grb 0 200 -1.0 MPS H11 jb rb (mmhos) y rb , REVERSE TRANSFER ADMITTANCE (mmhos) yrb, REVERSE TRANSFER ADMITTANCE 100 200 300 400 500 f, FREQUENCY (MHz) 700 -5.0 -2.0 -1.8 -1.2 -0.8 1000 Figure 5. Rectangular Form 1000 MHz 0 -0.4 0.4 grb (mmhos) 0.8 1.2 1.6 2.0 Figure 6. Polar Form yob, OUTPUT ADMITTANCE 10 1000 MHz 8.0 8.0 7.0 700 6.0 5.0 jb ob(mmhos) yob, OUTPUT ADMITTANCE (mmhos) 10 9.0 bob 4.0 6.0 4.0 400 3.0 2.0 gob 1.0 0 100 200 300 400 500 f, FREQUENCY (MHz) 200 2.0 100 700 1000 0 0 Figure 7. Rectangular Form 2.0 4.0 6.0 gob (mmhos) Figure 8. Polar Form http://onsemi.com 948 8.0 10 MSD42WT1 Preferred Device NPN Silicon General Purpose High Voltage Transistor This NPN Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS (TA = 25C) Rating Symbol Value Unit Collector-Base Voltage V(BR)CBO 300 Vdc Collector-Emitter Voltage V(BR)CEO 300 Vdc Emitter-Base Voltage V(BR)EBO 6.0 Vdc IC 150 mAdc Collector Current - Continuous 2 EMITTER 3 THERMAL CHARACTERISTICS Rating 1 BASE Symbol Max Unit Power DissipatioN (Note 3) PD 150 mW Junction Temperature TJ 150 C Tstg -55+150 C Storage Temperature Range SC-70 (SOT-323) CASE 419-04 STYLE 3 1 2 MARKING DIAGRAM ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 300 - Vdc Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0) V(BR)CBO 300 - Vdc Emitter-Base Breakdown Voltage (IE = 100 Adc, IE = 0) V(BR)EBO 6.0 - Vdc Collector-Base Cutoff Current (VCB = 200 Vdc, IE = 0) ICBO - 0.1 A Emitter-Base Cutoff Current (VEB = 6.0 Vdc, IB = 0) IEBO DC Current Gain (Note 4) (VCE = 10 Vdc, IC = 1.0 mAdc) (VCE = 10 Vdc, IC = 30 mAdc) Collector-Emitter Saturation Voltage (Note 4) (IC = 200 mAdc, IB = 2.0 mAdc) H1D D = Date Code ORDERING INFORMATION - A 0.1 Device MSD42WT1 Package Shipping SC-70/SOT-323 3000 Tape & Reel - hFE1 hFE2 25 40 - - VCE(sat) - 0.5 Vdc Preferred devices are recommended choices for future use and best overall value. 3. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. 4. Pulse Test: Pulse Width 300 s, D.C. 2%. Semiconductor Components Industries, LLC, 2001 October, 2001 - Rev. 2 949 Publication Order Number: MSD42WT1/D ON Semiconductor MSD601-RT1 MSD601-ST1 NPN General Purpose Amplifier Transistors Surface Mount MSD601-RT1 is a Preferred Device 3 2 MAXIMUM RATINGS (TA = 25C) 1 Symbol Value Unit Collector-Base Voltage V(BR)CBO 60 Vdc Collector-Emitter Voltage V(BR)CEO 50 Vdc Emitter-Base Voltage V(BR)EBO 7.0 Vdc IC 100 mAdc IC(P) 200 mAdc Symbol Max Unit Power Dissipation PD 200 mW Junction Temperature TJ 150 C Storage Temperature Tstg -55 ~ +150 C Rating Collector Current -- Continuous Collector Current -- Peak CASE 318D-04, STYLE 1 SC-59 COLLECTOR 3 THERMAL CHARACTERISTICS Characteristic 2 BASE 1 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C) Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) V(BR)CEO 50 -- Vdc Collector-Base Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO 60 -- Vdc Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO 7.0 -- Vdc Collector-Base Cutoff Current (VCB = 45 Vdc, IE = 0) ICBO -- 0.1 Adc Collector-Emitter Cutoff Current (VCE = 10 Vdc, IB = 0) ICEO -- 100 nAdc hFE1 hFE2 210 290 90 340 460 -- VCE(sat) -- 0.5 Characteristic Gain(1) DC Current (VCE = 10 Vdc, IC = 2.0 mAdc) -- MSD601-RT1 MSD601-ST1 (VCE = 2.0 Vdc, IC = 100 mAdc) Collector-Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) Vdc 1. Pulse Test: Pulse Width 300 s, D.C. 2%. DEVICE MARKING Marking Symbol YRX YSX MSD601-RT1 MSD601-ST1 The "X" represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 3 950 Publication Order Number: MSD601-RT1/D ON Semiconductor MSD602-RT1 NPN General Purpose Amplifier Transistor Surface Mount ON Semiconductor Preferred Device 3 MAXIMUM RATINGS (TA = 25C) 2 Symbol Value Unit Collector-Base Voltage V(BR)CBO 60 Vdc Collector-Emitter Voltage V(BR)CEO 50 Vdc Emitter-Base Voltage V(BR)EBO 7.0 Vdc IC 500 mAdc IC(P) 1.0 Adc Symbol Max Unit Power Dissipation PD 200 mW Junction Temperature TJ 150 C Storage Temperature Tstg -55 ~ +150 C Rating Collector Current -- Continuous Collector Current -- Peak 1 CASE 318D-04, STYLE 1 SC-59 COLLECTOR 3 THERMAL CHARACTERISTICS Characteristic 2 BASE 1 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C) Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO 50 -- Vdc Collector-Base Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO 60 -- Vdc Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO 7.0 -- Vdc ICBO -- 0.1 Adc hFE1 hFE2 120 40 240 -- VCE(sat) -- 0.6 Vdc Cob -- 15 pF Collector-Base Cutoff Current (VCB = 20 Vdc, IE = 0) Gain(1) DC Current (VCE = 10 Vdc, IC = 150 mAdc) (VCE = 10 Vdc, IC = 500 mAdc) -- Collector-Emitter Saturation Voltage (IC = 300 mAdc, IB = 30 mAdc) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width 300 s, D.C. 2%. DEVICE MARKING Marking Symbol WRX The "X" represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 2 951 Publication Order Number: MSD602-RT1/D ON Semiconductor MSD6100 Dual Switching Diode Common Cathode MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Reverse Voltage VR 100 Vdc Recurrent Peak Forward Current IF 200 mAdc IFM(surge) 500 mAdc Peak Forward Surge Current (Pulse Width = 10 sec) Power Dissipation @ TA = 25C Derate above 25C PD (1) TJ, Tstg(1) Operating and Storage Junction Temperature Range Unit 625 5.0 mW mW/C -55 to +135 C 1 2 3 CASE 29-11, STYLE 3 TO-92 (TO-226AA) Anode 1 2 Anode 3 Cathode ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (EACH DIODE) Characteristic Breakdown Voltage (I(BR) = 100 Adc) Symbol Min Max Unit V(BR) 100 -- Vdc -- -- -- 5.0 0.1 50 0.55 0.67 0.75 0.7 0.82 1.1 Adc Reverse Current (VR = 100 Vdc) (VR = 50 Vdc) (VR = 50 Vdc, TA = 125C) IR Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 100 mAdc) VF Capacitance (VR = 0) C -- 1.5 pF Reverse Recovery Time (IF = IR = 10 mAdc, VR = 5.0 Vdc, irr = 1.0 mAdc) trr -- 4.0 ns Vdc 1. Continuous package improvements have enhanced these guaranteed Maximum Ratings as follows: PD = 1.0 W @ TC = 25C, Derate above 25C 8.0 mW/C, TJ = -65 to +150C, JC = 125C/W. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 952 Publication Order Number: MSD6100/D MSD6100 TYPICAL CHARACTERISTICS Curves Applicable to Each Anode 10 IR , REVERSE CURRENT (A) TA = 85C 10 TA = -40C 1.0 0.1 TA = 25C 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) TA = 125C 1.0 TA = 85C 0.1 TA = 55C 0.01 0.001 1.2 TA = 150C TA = 25C 0 10 Figure 1. Forward Voltage 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Leakage Current 1.0 CD, DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 100 0.9 0.8 0.7 0.6 0 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Capacitance http://onsemi.com 953 8 50 ON Semiconductor MSD6150 Dual Diode Common Anode MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Peak Forward Recurrent Current IF 200 mAdc IFM(surge) 500 mAdc Peak Forward Surge Current (Pulse Width = 10 sec) Total Device Dissipation @ TA = 25C Derate above 25C Operating and Storage Junction Temperature Range PD (1) TJ, Tstg(1) 625 5.0 mW mW/C -55 to +135 C 1 2 3 CASE 29-11, STYLE 4 TO-92 (TO-226AA) 3 Anode Cathode 1 2 Cathode ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (EACH DIODE) Symbol Min Typ Max Unit V(BR) 70 -- -- Vdc Reverse Current (VR = 50 Vdc) IR -- -- 0.1 Adc Forward Voltage (IF = 10 mAdc) VF -- 0.80 1.0 Vdc Capacitance (VR = 0) C -- 5.0 8.0 pF Reverse Recovery Time (IF = IR = 10 mAdc, VR = 5.0 Vdc, irr = 1.0 mAdc) trr -- -- 100 ns Characteristic Breakdown Voltage (I(BR) = 100 Adc) 1. Continuous package improvements have enhanced these guaranteed Maximum Ratings as follows: PD = 1.0 W @ TC = 25C, Derate above 8.0 mW/C, PD = 10 W @ TC = 25C, Derate above 80 mW/C, TJ, Tstg = -55 to +150C, JC = 12.5C/W, JA = 125C. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 954 Publication Order Number: MSD6150/D MSD6150 TYPICAL CHARACTERISTICS Curves Applicable to Each Cathode 10 IR , REVERSE CURRENT (A) TA = 85C 10 TA = -40C 1.0 0.1 TA = 25C 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) TA = 125C 1.0 TA = 85C 0.1 TA = 55C 0.01 0.001 1.2 TA = 150C TA = 25C 0 10 Figure 1. Forward Voltage 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Leakage Current 1.75 CD, DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 100 1.5 1.25 1.0 0.75 0 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Capacitance http://onsemi.com 955 8 50 MUN2111T1 Series Preferred Devices Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-59 package which is designed for low power surface mount applications. * * * * * * * Simplifies Circuit Design Reduces Board Space Reduces Component Count Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: Class 1 ESD Rating - Machine Model: Class B The SC-59 package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. Available in 8 mm embossed tape and reel Use the Device Number to order the 7 inch/3000 unit reel. http://onsemi.com PIN 3 COLLECTOR (OUTPUT) R1 PIN 2 BASE (INPUT) R2 PIN 1 EMITTER (GROUND) 3 2 1 SC-59 CASE 318D PLASTIC MARKING DIAGRAM MAXIMUM RATINGS (TA = 25C unless otherwise noted) Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc Symbol Max Unit PD 230 (Note 1.) 338 (Note 2.) 1.8 (Note 1.) 2.7 (Note 2.) mW Rating Collector Current 6x 6x = Device Code x = A - T* THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25C Derate above 25C C/W ORDERING INFORMATION See detailed ordering and shipping information on page 957 of this data sheet. DEVICE MARKING INFORMATION Thermal Resistance - Junction-to-Ambient RJA 540 (Note 1.) 370 (Note 2.) C/W *See device marking table on page 957 of this data sheet. Thermal Resistance - Junction-to-Lead RJL 264 (Note 1.) 287 (Note 2.) C/W Preferred devices are recommended choices for future use and best overall value. Junction and Storage Temperature Range TJ, Tstg -55 to +150 C 1. FR-4 @ Minimum Pad 2. FR-4 @ 1.0 x 1.0 inch Pad Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 11 956 Publication Order Number: MUN2111T1/D MUN2111T1 Series DEVICE MARKING AND RESISTOR VALUES Device Package Marking R1 (K) R2 (K) Shipping MUN2111T1 SC-59 6A 10 10 3000/Tape & Reel MUN2112T1 SC-59 6B 22 22 3000/Tape & Reel MUN2113T1 SC-59 6C 47 47 3000/Tape & Reel MUN2114T1 SC-59 6D 10 47 3000/Tape & Reel MUN2115T1 (Note 3.) SC-59 6E 10 3000/Tape & Reel MUN2116T1 (Note 3.) SC-59 6F 4.7 3000/Tape & Reel MUN2130T1 (Note 3.) SC-59 6G 1.0 1.0 3000/Tape & Reel MUN2131T1 (Note 3.) SC-59 6H 2.2 2.2 3000/Tape & Reel MUN2132T1 (Note 3.) SC-59 6J 4.7 4.7 3000/Tape & Reel MUN2133T1 (Note 3.) SC-59 6K 4.7 47 3000/Tape & Reel MUN2134T1 (Note 3.) SC-59 6L 22 47 3000/Tape & Reel MUN2136T1 SC-59 6N 100 100 3000/Tape & Reel MUN2137T1 SC-59 6P 47 22 3000/Tape & Reel MUN2140T1 (Note 3.) SC-59 6T 47 3000/Tape & Reel ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO - - 100 nAdc Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO - - 500 nAdc Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO - - - - - - - - - - - - - - - - - - - - - - - - - - - - 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.05 0.13 0.20 mAdc Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) V(BR)CBO 50 - - Vdc Collector-Emitter Breakdown Voltage (Note 4.) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 - - Vdc OFF CHARACTERISTICS MUN2111T1 MUN2112T1 MUN2113T1 MUN2114T1 MUN2115T1 MUN2116T1 MUN2130T1 MUN2131T1 MUN2132T1 MUN2133T1 MUN2134T1 MUN2136T1 MUN2137T1 MUN2140T1 3. New resistor combinations. Updated curves to follow in subsequent data sheets. 4. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% http://onsemi.com 957 MUN2111T1 Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 120 60 100 140 140 250 250 5.0 15 27 140 130 150 140 250 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 - - - - - - - - - - - - - - - - - - - - - - - - - - - - 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 Unit ON CHARACTERISTICS (Note 5.) DC Current Gain (VCE = 10 V, IC = 5.0 mA) Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 5.0 mA) (IC = 10 mA, IB = 1.0 mA) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 5.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 k) MUN2111T1 MUN2112T1 MUN2113T1 MUN2114T1 MUN2115T1 MUN2116T1 MUN2130T1 MUN2131T1 MUN2132T1 MUN2133T1 MUN2134T1 MUN2136T1 MUN2137T1 MUN2140T1 VCE(sat) MUN2111T1 MUN2112T1 MUN2113T1 MUN2114T1 MUN2115T1 MUN2130T1 MUN2136T1 MUN2137T1 MUN2131T1 MUN2116T1 MUN2132T1 MUN2134T1 MUN2140T1 Vdc VOL MUN2111T1 MUN2112T1 MUN2114T1 MUN2115T1 MUN2116T1 MUN2130T1 MUN2131T1 MUN2132T1 MUN2133T1 MUN2134T1 MUN2113T1 MUN2140T1 MUN2136T1 MUN2137T1 5. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% http://onsemi.com 958 Vdc MUN2111T1 Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit VOH 4.9 - - Vdc R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 70 32.9 32.9 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 100 47 47 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 130 61.1 61.1 k 0.8 0.17 - 0.8 0.055 0.38 1.7 1.0 0.21 - 1.0 0.1 0.47 2.1 1.2 0.25 - 1.2 0.185 0.56 2.6 ON CHARACTERISTICS (Note 6.) (Continued) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k) MUN2130T1 MUN2115T1 (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k) MUN2116T1 MUN2131T1 MUN2132T1 MUN2140T1 Input Resistor MUN2111T1 MUN2112T1 MUN2113T1 MUN2114T1 MUN2115T1 MUN2116T1 MUN2130T1 MUN2131T1 MUN2132T1 MUN2133T1 MUN2134T1 MUN2136T1 MUN2137T1 MUN2140T1 Resistor Ratio MUN2111T1/MUN2112T1/MUN2113T1/ MUN2136T1 MUN2114T1 MUN2115T1/MUN2116T1/MUN2140T1 MUN2130T1/MUN2131T1/MUN2132T1 MUN2133T1 MUN2134T1 MUN2137T1 R1/R2 6. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% +12 V PD, POWER DISSIPATION (mW) 350 300 250 Typical Application for PNP BRTs 200 150 RJA= 370C/W 100 LOAD 50 0 -50 0 50 100 150 TA, AMBIENT TEMPERATURE (5C) Figure 1. Derating Curve Figure 2. Inexpensive, Unregulated Current Source http://onsemi.com 959 MUN2111T1 Series 1000 1 VCE = 10 V IC/IB = 10 TA = -25C 25C 75C 0.1 hFE, DC CURRENT GAIN VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN2111T1 0.01 0 20 40 60 IC, COLLECTOR CURRENT (mA) TA = 75C 100 -25C 10 80 1 10 IC, COLLECTOR CURRENT (mA) Figure 3. VCE(sat) vs. IC 100 IC, COLLECTOR CURRENT (mA) 1 0 10 1 0.1 VO = 5 V 0.01 0.001 50 TA = -25C 0 Figure 5. Output Capacitance 6 7 8 2 3 4 5 Vin, INPUT VOLTAGE (VOLTS) 1 VO = 0.2 V TA = -25C 10 25C 75C 1 0.1 0 10 9 Figure 6. Output Current vs. Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 2 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 25C 75C f = 1 MHz lE = 0 V TA = 25C 0 100 Figure 4. DC Current Gain 4 3 25C 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 7. Input Voltage vs. Output Current http://onsemi.com 960 50 10 MUN2111T1 Series 1000 10 VCE = 10 V IC/IB = 10 TA = -25C hFE, DC CURRENT GAIN VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN2112T1 25C 1 75C 0.1 0.01 TA = 75C 100 10 0 20 40 60 IC, COLLECTOR CURRENT (mA) 1 80 10 Figure 9. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 4 f = 1 MHz lE = 0 V TA = 25C 3 2 1 0 25C 75C 10 TA = -25C 1 0.1 0.01 VO = 5 V 0.001 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 0 1 Figure 10. Output Capacitance 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA = -25C 25C 10 75C 1 0.1 0 9 Figure 11. Output Current vs. Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 10 0 IC, COLLECTOR CURRENT (mA) Figure 8. VCE(sat) vs. IC 0 25C -25C 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 12. Input Voltage vs. Output Current http://onsemi.com 961 50 10 MUN2111T1 Series 1 1000 IC/IB = 10 TA = -25C 25C 75C 0.1 0.01 hFE, DC CURRENT GAIN VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN2113T1 0 10 20 30 IC, COLLECTOR CURRENT (mA) TA = 75C 25C 10 40 -25C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 14. DC Current Gain Figure 13. VCE(sat) vs. IC IC, COLLECTOR CURRENT (mA) 100 f = 1 MHz lE = 0 V TA = 25C 0.6 0.4 0.2 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 10 -25C 0.1 0.01 VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA = -25C 25C 10 75C 1 0 9 Figure 16. Output Current vs. Input Voltage 100 0.1 25C 1 0.001 50 TA = 75C Figure 15. Output Capacitance Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 1 0.8 100 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 17. Input Voltage vs. Output Current http://onsemi.com 962 50 10 MUN2111T1 Series 180 1 IC/IB = 10 25C 140 25C 0.1 -25C 120 75C 100 0.01 80 60 40 20 0.00 0 1 20 40 60 IC, COLLECTOR CURRENT (mA) 0 80 2 1 4.5 6 8 10 15 20 40 50 60 70 80 90 100 IC, COLLECTOR CURRENT (mA) 100 3.5 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25C 4 3 2.5 2 1.5 1 0.5 0 2 4 6 8 10 15 TA = 75C 10 VO = 5 V 1 20 25 30 35 40 45 50 25C -25C 0 2 4 Figure 20. Output Capacitance TA = -25C 25C 75C 1 VO = 0.2 V 0 8 Figure 21. Output Current vs. Input Voltage 10 0.1 6 Vin, INPUT VOLTAGE (VOLTS) VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) 0 4 Figure 19. DC Current Gain Figure 18. VCE(sat) vs. IC Cob, CAPACITANCE (pF) TA = 75C VCE = 10 V 160 TA = -25C hFE, DC CURRENT GAIN VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN2114T1 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 22. Input Voltage vs. Output Current http://onsemi.com 963 50 10 MUN2111T1 Series 1 1000 IC/IB = 10 IC/IB =10 hFE, DC CURRENT GAIN VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) TYPICAL ELECTRICAL CHARACTERISTICS - MUN2131T1 25C 75C 0.1 -25C 0.01 100 25C 75C 10 -25C 1 0 5 10 15 20 25 30 35 1 10 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 23. VCE(sat) vs. IC Figure 24. DC Current Gain 12 IC, COLLECTOR CURRENT (mA) 100 10 f = 1 MHz IE = 0 A TA = 25C 8 6 4 2 0 75C -25C 10 1 TA = 25C VO = 5 V 0.01 0.01 0 5 10 15 20 25 30 35 40 45 50 55 0 1 2 3 4 5 6 7 VR, REVERSE BIAS VOLTAGE (V) Vin, INPUT VOLTAGE (V) Figure 25. Output Capacitance Figure 26. Output Current vs. Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 TA = -25C 75C 1 25C VO = 0.2 V 0.1 0 10 20 5 15 IC, COLLECTOR CURRENT (mA) Figure 27. Input Voltage vs. Output Current http://onsemi.com 964 25 8 MUN2111T1 Series TYPICAL ELECTRICAL CHARACTERISTICS -- MUN2136T1 1000 75C hFE, DC CURRENT GAIN VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 0.1 75C 25C -25C TA = -25C 100 25C 10 VCE = 10 V IC/IB = 10 0.01 0 1 2 3 4 5 IC, COLLECTOR CURRENT (mA) 6 1 7 1 10 IC, COLLECTOR CURRENT (mA) Figure 28. Maximum Collector Voltage versus Collector Current Figure 29. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 1.0 f = 1 MHz IE = 0 V TA = 25C 0.8 0.6 0.4 0.2 25C 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 60 TA = -25C 1 VO = 5 V 0 1 2 3 4 TA = -25C 10 VO = 0.2 V 75C 0 2 6 7 8 9 10 Figure 31. Output Current versus Input Voltage 100 1 5 Vin, INPUT VOLTAGE (VOLTS) Figure 30. Output Capacitance 25C 75C 10 0.1 0 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 1.2 0 100 4 6 8 10 12 14 16 IC, COLLECTOR CURRENT (mA) 18 Figure 32. Input Voltage versus Output Current http://onsemi.com 965 20 MUN2111T1 Series TYPICAL ELECTRICAL CHARACTERISTICS -- MUN2137T1 1000 hFE, DC CURRENT GAIN VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 TA = -25C 75C 0.1 25C 75C TA = -25C 100 25C VCE = 10 V IC/IB = 10 0.01 0 5 10 15 20 25 30 35 40 IC, COLLECTOR CURRENT (mA) 45 10 50 1 10 IC, COLLECTOR CURRENT (mA) Figure 33. Maximum Collector Voltage versus Collector Current Figure 34. DC Current Gain 100 1.2 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25C 1.0 0.8 0.6 0.4 0.2 75C 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 60 TA = -25C 10 25C 1 0.1 0.01 0.001 0 VO = 5 V 0 1 2 3 4 VO = 0.2 V 1 TA = -25C 75C 25C 0 6 7 8 9 10 11 Figure 36. Output Current versus Input Voltage 100 10 5 Vin, INPUT VOLTAGE (VOLTS) Figure 35. Output Capacitance Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 1.4 0 100 5 10 15 20 IC, COLLECTOR CURRENT (mA) 25 Figure 37. Input Voltage versus Output Current http://onsemi.com 966 MUN2211T1 Series Preferred Devices Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-59 package which is designed for low power surface mount applications. * * * * * * * Simplifies Circuit Design Reduces Board Space Reduces Component Count Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: Class 1 ESD Rating - Machine Model: Class B The SC-59 package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. Available in 8 mm embossed tape and reel Use the Device Number to order the 7 inch/3000 unit reel. http://onsemi.com NPN SILICON BIAS RESISTOR TRANSISTORS PIN 2 BASE (INPUT) PIN 3 COLLECTOR (OUTPUT) R1 R2 PIN 1 EMITTER (GROUND) 3 2 MAXIMUM RATINGS (TA = 25C unless otherwise noted) Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc Symbol Max Unit PD 230 (Note 1.) 338 (Note 2.) 1.8 (Note 1.) 2.7 (Note 2.) mW Rating Collector Current Total Device Dissipation TA = 25C Derate above 25C RJA 540 (Note 1.) 370 (Note 2.) C/W Thermal Resistance - Junction-to-Lead RJL 264 (Note 1.) 287 (Note 2.) C/W Junction and Storage Temperature Range TJ, Tstg -55 to +150 C 8x M = Specific Device Code = Date Code DEVICE MARKING INFORMATION 1. FR-4 @ Minimum Pad 2. FR-4 @ 1.0 x 1.0 inch Pad March, 2001 - Rev. 7 8x M C/W Thermal Resistance - Junction-to-Ambient Semiconductor Components Industries, LLC, 2001 SC-59 CASE 318D STYLE 1 MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic 1 See specific marking information in the device marking table on page 968 of this data sheet. Preferred devices are recommended choices for future use and best overall value. 967 Publication Order Number: MUN2211T1/D MUN2211T1 Series DEVICE MARKING AND RESISTOR VALUES Device Package Marking R1 (K) R2 (K) Shipping MUN2211T1 SC-59 8A 10 10 3000/Tape & Reel MUN2212T1 SC-59 8B 22 22 3000/Tape & Reel MUN2213T1 SC-59 8C 47 47 3000/Tape & Reel MUN2214T1 SC-59 8D 10 47 3000/Tape & Reel MUN2215T1 (Note 3.) SC-59 8E 10 3000/Tape & Reel MUN2216T1 (Note 3.) SC-59 8F 4.7 3000/Tape & Reel MUN2230T1 (Note 3.) SC-59 8G 1.0 1.0 3000/Tape & Reel MUN2231T1 (Note 3.) SC-59 8H 2.2 2.2 3000/Tape & Reel MUN2232T1 (Note 3.) SC-59 8J 4.7 4.7 3000/Tape & Reel MUN2233T1 (Note 3.) SC-59 8K 4.7 47 3000/Tape & Reel MUN2234T1 (Note 3.) SC-59 8L 22 47 3000/Tape & Reel MUN2236T1 SC-59 8N 100 100 3000/Tape & Reel MUN2237T1 SC-59 8P 47 22 3000/Tape & Reel MUN2240T1 (Note 3.) SC-59 8T 47 3000/Tape & Reel MUN2241T1 (Note 3.) SC-59 8U 100 3000/Tape & Reel 3. New devices. Updated curves to follow in subsequent data sheets. http://onsemi.com 968 MUN2211T1 Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO - - 100 nAdc Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO - - 500 nAdc Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.05 0.13 0.2 0.1 mAdc Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) V(BR)CBO 50 - - Vdc Collector-Emitter Breakdown Voltage (Note 4.) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 - - Vdc hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 160 160 60 100 140 140 350 350 5.0 15 30 200 150 150 140 350 350 - - - - - - - - - - - - - - - VCE(sat) - - 0.25 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 OFF CHARACTERISTICS MUN2211T1 MUN2212T1 MUN2213T1 MUN2214T1 MUN2215T1 MUN2216T1 MUN2230T1 MUN2231T1 MUN2232T1 MUN2233T1 MUN2234T1 MUN2236T1 MUN2237T1 MUN2240T1 MUN2241T1 ON CHARACTERISTICS (Note 4.) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN2211T1 MUN2212T1 MUN2213T1 MUN2214T1 MUN2215T1 MUN2216T1 MUN2230T1 MUN2231T1 MUN2232T1 MUN2233T1 MUN2234T1 MUN2236T1 MUN2237T1 MUN2240T1 MUN2241T1 Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 5 mA) MUN2230T1/MUN2231T1 (IC = 10 mA, IB = 1 mA) MUN2215T1/MUN2216T1/ MUN2232T1/MUN2233T1/MUN2234T1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 5.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 k) (VCC = 5.0 V, VB = 5.0 V, RL = 1.0 k) VOL MUN2211T1 MUN2212T1 MUN2214T1 MUN2215T1 MUN2216T1 MUN2230T1 MUN2231T1 MUN2232T1 MUN2233T1 MUN2234T1 MUN2213T1 MUN2240T1 MUN2236T1 MUN2237T1 MUN2241T1 4. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% http://onsemi.com 969 Vdc Vdc MUN2211T1 Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit VOH 4.9 - - Vdc R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 70 32.9 70 32.9 70 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 100 47 100 47 100 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 130 61.1 130 61.1 100 k R1/R2 0.8 1.0 1.2 0.17 - 0.21 - 0.25 - 0.8 0.055 0.38 1.7 1.0 0.1 0.47 2.1 1.2 0.185 0.56 2.6 ON CHARACTERISTICS (Note 5.) (Continued) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k) MUN2230T1 MUN2215T1 (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k) MUN2216T1 MUN2233T1 MUN2240T1 Input Resistor Resistor Ratio MUN2211T1 MUN2212T1 MUN2213T1 MUN2214T1 MUN2215T1 MUN2216T1 MUN2230T1 MUN2231T1 MUN2232T1 MUN2233T1 MUN2234T1 MUN2235T1 MUN2236T1 MUN2237T1 MUN2240T1 MUN2241T1 MUN2211T1/MUN2212T1/MUN2213T1/ MUN2236T1 MUN2214T1 MUN2215T1/MUN2216T1/MUN2240T1/ MUN2241T1 MUN2230T1/MUN2231T1/MUN2232T1 MUN2233T1 MUN2234T1 MUN2237T1 5. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% PD, POWER DISSIPATION (mW) 350 300 250 200 150 100 50 0 -50 RJA = 370C/W 0 50 100 TA, AMBIENT TEMPERATURE (C) Figure 1. Derating Curve http://onsemi.com 970 150 MUN2211T1 Series 1 1000 IC/IB = 10 VCE = 10 V TA=-25C 25C 75C 0.1 hFE, DC CURRENT GAIN VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN2211T1 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) TA=75C 25C -25C 100 10 80 1 10 IC, COLLECTOR CURRENT (mA) Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 2 1 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 1 0.1 0.01 VO = 5 V 0.001 50 TA=-25C 10 0 Figure 4. Output Capacitance 10 25C 75C f = 1 MHz IE = 0 V TA = 25C 1 2 5 6 7 3 4 Vin, INPUT VOLTAGE (VOLTS) 25C 75C 1 0.1 0 10 8 9 Figure 5. Output Current versus Input Voltage TA=-25C VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 4 3 100 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 6. Input Voltage versus Output Current http://onsemi.com 971 50 10 MUN2211T1 Series 1000 1 IC/IB = 10 VCE = 10 V TA=-25C TA=75C 25C 25C hFE , DC CURRENT GAIN VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN2212T1 75C 0.1 0.01 0.001 40 20 60 IC, COLLECTOR CURRENT (mA) 0 -25C 100 10 80 1 IC, COLLECTOR CURRENT (mA) Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25C 2 1 0 0 10 20 30 40 25C TA=-25C 10 1 0.1 0.01 0.001 50 75C VO = 5 V 0 2 4 6 8 10 VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) Figure 9. Output Capacitance Figure 10. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 4 3 100 10 TA=-25C 10 75C 25C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 11. Input Voltage versus Output Current http://onsemi.com 972 50 MUN2211T1 Series 10 1000 TA=-25C IC/IB = 10 25C 1 VCE = 10 V hFE , DC CURRENT GAIN VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN2213T1 75C 0.1 0.01 0 20 40 60 IC, COLLECTOR CURRENT (mA) TA=75C 25C -25C 100 10 80 10 1 Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 1 IC, COLLECTOR CURRENT (mA) 0.6 0.4 0 25C 75C TA=-25C 10 1 0.1 0.01 0.2 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 0.001 50 100 VO = 5 V 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=-25C 10 25C 75C 1 0.1 0 10 8 10 Figure 15. Output Current versus Input Voltage Figure 14. Output Capacitance V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 100 f = 1 MHz IE = 0 V TA = 25C 0.8 100 IC, COLLECTOR CURRENT (mA) 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 16. Input Voltage versus Output Current http://onsemi.com 973 MUN2211T1 Series 1 300 TA=-25C IC/IB = 10 25C 0.1 75C 0.01 TA=75C VCE = 10 250 hFE, DC CURRENT GAIN VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN2214T1 25C 200 -25C 150 100 50 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 0 80 2 1 4 6 Figure 17. VCE(sat) versus IC 100 75C 3 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25C 3.5 2.5 2 1.5 1 0.5 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 50 Figure 19. Output Capacitance 25C TA=-25C 10 VO = 5 V 1 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) TA=-25C VO= 0.2 V 25C 75C 1 0.1 0 10 8 10 Figure 20. Output Current versus Input Voltage 10 V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 90 100 Figure 18. DC Current Gain 4 0 8 10 15 20 40 50 60 70 80 IC, COLLECTOR CURRENT (mA) 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 21. Input Voltage versus Output Current http://onsemi.com 974 50 MUN2211T1 Series 1000 1 VCE = 10 V IC/IB = 10 TA = -25C hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN2236T1 25C 75C 0.1 75C 25C 100 0.01 0 5 10 20 30 15 25 IC, COLLECTOR CURRENT (mA) 35 TA = -25C 10 40 10 1 IC, COLLECTOR CURRENT (mA) 0.1 Figure 22. VCE(sat) versus IC Figure 23. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 5 4.5 f = 1 MHz lE = 0 V TA = 25C 4 3.5 3 2.5 2 1.5 1 0.5 0 75C TA = -25C 10 25C 1 VO = 5 V 0.1 0 5 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 Figure 24. Output Capacitance 0 5 10 15 20 25 30 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V 25C TA = -25C 75C 10 1 0.1 0 5 35 40 Figure 25. Output Current versus Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 15 25 10 20 IC, COLLECTOR CURRENT (mA) 30 Figure 26. Input Voltage versus Output Current http://onsemi.com 975 35 MUN2211T1 Series 1000 1 VCE = 10 V IC/IB = 10 75C hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN2237T1 TA = -25C 25C 75C 0.1 0.01 0 5 10 20 30 15 25 IC, COLLECTOR CURRENT (mA) 35 10 IC, COLLECTOR CURRENT (mA) 1 Figure 27. VCE(sat) versus IC IC, COLLECTOR CURRENT (mA) 100 1.6 1.4 1.2 1 0.8 0.6 f = 1 MHz lE = 0 V TA = 25C 75C TA = -25C 10 25C 1 0.1 0.01 VO = 5 V 0.001 0 5 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 Figure 29. Output Capacitance 0 2 4 6 8 10 12 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA = -25C 25C 75C 10 1 0 5 14 16 Figure 30. Output Current versus Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 1.8 0.2 0 100 Figure 28. DC Current Gain 2 0.4 25C 10 1 40 TA = -25C 100 15 25 10 20 30 IC, COLLECTOR CURRENT (mA) 35 Figure 31. Input Voltage versus Output Current http://onsemi.com 976 40 MUN2211T1 Series TYPICAL APPLICATIONS FOR NPN BRTs +12 V ISOLATED LOAD FROM P OR OTHER LOGIC Figure 32. Level Shifter: Connects 12 or 24 Volt Circuits to Logic +12 V VCC OUT IN LOAD Figure 33. Open Collector Inverter: Inverts the Input Signal Figure 34. Inexpensive, Unregulated Current Source http://onsemi.com 977 MUN5111DW1T1 Series Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5111DW1T1 series, two BRT devices are housed in the SOT-363 package which is ideal for low-power surface mount applications where board space is at a premium. * * * * (3) (2) R1 R2 Q1 Q2 R2 R1 (4) (5) Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7 inch/3000 Unit Tape and Reel (6) 6 5 4 1 MAXIMUM RATINGS (TA = 25C unless otherwise noted, common for Q1 and Q2) Rating (1) 2 3 SOT-363 CASE 419B STYLE 1 Symbol Value Unit Collector-Base Voltage VCBO -50 Vdc Collector-Emitter Voltage VCEO -50 Vdc IC -100 mAdc MARKING DIAGRAM Symbol Max Unit xx PD 187 (Note 1.) 256 (Note 2.) 1.5 (Note 1.) 2.0 (Note 2.) mW Collector Current THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance - Junction-to-Ambient Characteristic (Both Junctions Heated) mW/C RJA 670 (Note 1.) 490 (Note 2.) C/W Symbol Max Unit PD 250 (Note 1.) 385 (Note 2.) 2.0 (Note 1.) 3.0 (Note 2.) mW Total Device Dissipation TA = 25C Derate above 25C mW/C Thermal Resistance - Junction-to-Ambient RJA 493 (Note 1.) 325 (Note 2.) C/W Thermal Resistance - Junction-to-Lead RJL 188 (Note 1.) 208 (Note 2.) C/W Junction and Storage Temperature Range TJ, Tstg -55 to +150 C xx = Device Marking = (See Page 979) DEVICE MARKING INFORMATION See specific marking information in the device marking table on page 979 of this data sheet. Preferred devices are recommended choices for future use and best overall value. 1. FR-4 @ Minimum Pad 2. FR-4 @ 1.0 x 1.0 inch Pad Semiconductor Components Industries, LLC, 2001 January, 2001 - Rev. 3 978 Publication Order Number: MUN5111DW1T1/D MUN5111DW1T1 Series DEVICE MARKING AND RESISTOR VALUES Device Package Marking R1 (K) R2 (K) Shipping MUN5111DW1T1 SOT-363 0A 10 10 3000/Tape & Reel MUN5112DW1T1 SOT-363 0B 22 22 3000/Tape & Reel MUN5113DW1T1 SOT-363 0C 47 47 3000/Tape & Reel MUN5114DW1T1 SOT-363 0D 10 47 3000/Tape & Reel MUN5115DW1T1 (Note 3.) SOT-363 0E 10 3000/Tape & Reel MUN5116DW1T1 (Note 3.) SOT-363 0F 4.7 3000/Tape & Reel MUN5130DW1T1 (Note 3.) SOT-363 0G 1.0 1.0 3000/Tape & Reel MUN5131DW1T1 (Note 3.) SOT-363 0H 2.2 2.2 3000/Tape & Reel MUN5132DW1T1 (Note 3.) SOT-363 0J 4.7 4.7 3000/Tape & Reel MUN5133DW1T1 (Note 3.) SOT-363 0K 4.7 47 3000/Tape & Reel MUN5134DW1T1 (Note 3.) SOT-363 0L 22 47 3000/Tape & Reel MUN5135DW1T1 (Note 3.) SOT-363 0M 2.2 47 3000/Tape & Reel MUN5136DW1T1 (Note 3.) SOT-363 0N 100 100 3000/Tape & Reel MUN5137DW1T1 (Note 3.) SOT-363 0P 47 22 3000/Tape & Reel ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, common for Q1 and Q2) Characteristic Symbol Min Typ Max Unit Collector-Base Cutoff Current (VCB = -50 V, IE = 0) ICBO - - -100 nAdc Collector-Emitter Cutoff Current (VCE = -50 V, IB = 0) ICEO - - -500 nAdc Emitter-Base Cutoff Current (VEB = -6.0 V, IC = 0) IEBO - - - - - - - - - - - - - - - - - - - - - - - - - - - - -0.5 -0.2 -0.1 -0.2 -0.9 -1.9 -4.3 -2.3 -1.5 -0.18 -0.13 -0.2 -0.05 -0.13 mAdc Collector-Base Breakdown Voltage (IC = -10 A, IE = 0) V(BR)CBO -50 - - Vdc Collector-Emitter Breakdown Voltage (Note 4.) (IC = -2.0 mA, IB = 0) V(BR)CEO -50 - - Vdc VCE(sat) - - -0.25 Vdc OFF CHARACTERISTICS MUN5111DW1T1 MUN5112DW1T1 MUN5113DW1T1 MUN5114DW1T1 MUN5115DW1T1 MUN5116DW1T1 MUN5130DW1T1 MUN5131DW1T1 MUN5132DW1T1 MUN5133DW1T1 MUN5134DW1T1 MUN5135DW1T1 MUN5136DW1T1 MUN5137DW1T1 ON CHARACTERISTICS (Note 4.) Collector-Emitter Saturation Voltage (IC = -10 mA, IE = -0.3 mA) (IC = -10 mA, IB = -5 mA) MUN5130DW1T1/MUN5131DW1T1 (IC = -10 mA, IB = -1 mA) MUN5115DW1T1/MUN5116DW1T1 MUN5132DW1T1/MUN5133DW1T1/MUN5134DW1T1 3. New resistor combinations. Updated curves to follow in subsequent data sheets. 4. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% http://onsemi.com 979 MUN5111DW1T1 Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, common for Q1 and Q2) (Continued) Characteristic Symbol Min Typ Max Unit hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 80 60 100 140 140 250 250 5.0 15 27 140 130 140 130 140 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 VOH -4.9 - - Vdc R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 70 32.9 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 47 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 130 61.1 k 0.8 0.17 - 0.8 0.055 0.38 0.038 1.7 1.0 0.21 - 1.0 0.1 0.47 0.047 2.1 1.2 0.25 - 1.2 0.185 0.56 0.056 2.6 ON CHARACTERISTICS (Note 5.) (Continued) DC Current Gain (VCE = -10 V, IC = -5.0 mA) Output Voltage (on) (VCC = -5.0 V, VB = -2.5 V, RL = 1.0 k) (VCC = -5.0 V, VB = -3.5 V, RL = 1.0 k) (VCC = -5.0 V, VB = -5.5 V, RL = 1.0 k) (VCC = -5.0 V, VB = -4.0 V, RL = 1.0 k) MUN5111DW1T1 MUN5112DW1T1 MUN5113DW1T1 MUN5114DW1T1 MUN5115DW1T1 MUN5116DW1T1 MUN5130DW1T1 MUN5131DW1T1 MUN5132DW1T1 MUN5133DW1T1 MUN5134DW1T1 MUN5135DW1T1 MUN5136DW1T1 MUN5137DW1T1 VOL MUN5111DW1T1 MUN5112DW1T1 MUN5114DW1T1 MUN5115DW1T1 MUN5116DW1T1 MUN5130DW1T1 MUN5131DW1T1 MUN5132DW1T1 MUN5133DW1T1 MUN5134DW1T1 MUN5135DW1T1 MUN5113DW1T1 MUN5136DW1T1 MUN5137DW1T1 Output Voltage (off) (VCC = -5.0 V, VB = -0.5 V, RL = 1.0 k) (VCC = -5.0 V, VB = -0.05 V, RL = 1.0 k) MUN5130DW1T1 (VCC = -5.0 V, VB = -0.25 V, RL = 1.0 k) MUN5115DW1T1 MUN5116DW1T1 MUN5131DW1T1 MUN5133DW1T1 Input Resistor MUN5111DW1T1 MUN5112DW1T1 MUN5113DW1T1 MUN5114DW1T1 MUN5115DW1T1 MUN5116DW1T1 MUN5130DW1T1 MUN5131DW1T1 MUN5132DW1T1 MUN5133DW1T1 MUN5134DW1T1 MUN5135DW1T1 MUN5136DW1T1 MUN5137DW1T1 Resistor Ratio MUN5111DW1T1/MUN5112DW1T1/ MUN5113DW1T1/MUN5136DW1T1 MUN5114DW1T1 MUN5115DW1T1/MUN5116DW1T1 MUN5130DW1T1/MUN5131DW1T1/MUN5132DW1T1 MUN5133DW1T1 MUN5134DW1T1 MUN5135DW1T1 MUN5137DW1T1 R1/R2 5. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% http://onsemi.com 980 Vdc MUN5111DW1T1 Series TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5111DW1T1 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) ALL MUN5111DW1T1 SERIES DEVICES PD, POWER DISSIPATION (mW) 300 250 200 150 100 RJA = 490C/W 50 0 -50 0 50 100 TA, AMBIENT TEMPERATURE (C) 150 1 IC/IB = 10 TA=-25C 0.1 25C 75C 0.01 20 0 40 50 IC, COLLECTOR CURRENT (mA) Figure 1. Derating Curve - ALL DEVICES Figure 2. VCE(sat) versus IC TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5111DW1T1 4 VCE = 10 V Cob , CAPACITANCE (pF) hFE , DC CURRENT GAIN (NORMALIZED) 1000 TA=75C 25C 100 10 -25C 1 10 IC, COLLECTOR CURRENT (mA) 3 2 1 0 100 f = 1 MHz lE = 0 V TA = 25C 0 Figure 3. DC Current Gain 100 25C 75C TA=-25C 10 1 0.1 0.01 0.001 VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 50 Figure 4. Output Capacitance V in , INPUT VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) 100 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 8 9 Figure 5. Output Current versus Input Voltage TA=-25C 10 25C 75C 1 0.1 10 VO = 0.2 V 10 0 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 6. Input Voltage versus Output Current http://onsemi.com 981 50 MUN5111DW1T1 Series 1000 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5112DW1T1 IC/IB = 10 1 25C TA=-25C 75C 0.1 0.01 0 40 20 IC, COLLECTOR CURRENT (mA) TA=75C 10 1 Figure 8. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 3 2 1 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) TA=-25C 10 1 0.1 0.01 0.001 50 Figure 9. Output Capacitance 100 25C 75C f = 1 MHz lE = 0 V TA = 25C V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 4 0 VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V 10 25C 75C 1 0 10 8 9 Figure 10. Output Current versus Input Voltage TA=-25C 0.1 100 IC, COLLECTOR CURRENT (mA) Figure 7. VCE(sat) versus IC 0 25C -25C 100 10 50 VCE = 10 V 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 11. Input Voltage versus Output Current http://onsemi.com 982 10 MUN5111DW1T1 Series 1 1000 IC/IB = 10 TA=-25C 25C 75C 0.1 0.01 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5113DW1T1 0 10 20 30 IC, COLLECTOR CURRENT (mA) TA=75C 25C -25C 100 10 40 1 10 IC, COLLECTOR CURRENT (mA) Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 1 IC, COLLECTOR CURRENT (mA) 0.6 0.4 0.2 0 0 -25C 1 0.1 0.01 Figure 14. Output Capacitance VO = 5 V 1 0 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=-25C 25C 75C 1 0.1 0 10 8 9 Figure 15. Output Current versus Input Voltage 100 10 25C TA=75C 10 0.001 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 100 f = 1 MHz lE = 0 V TA = 25C 0.8 100 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 16. Input Voltage versus Output Current http://onsemi.com 983 50 10 MUN5111DW1T1 Series 1 180 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5114DW1T1 TA=-25C 25C 0.1 75C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 25C 140 -25C 120 100 80 60 40 20 0 80 TA=75C VCE = 10 V 160 2 1 4 6 Figure 17. VCE(sat) versus IC 100 TA=75C 3.5 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25C 4 3 2.5 2 1.5 1 0.5 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 10 VO = 5 V 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V 25C TA=-25C 75C 1 0 10 8 10 Figure 20. Output Current versus Input Voltage 10 0.1 25C -25C 1 50 Figure 19. Output Capacitance V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 80 90 100 Figure 18. DC Current Gain 4.5 0 8 10 15 20 40 50 60 70 IC, COLLECTOR CURRENT (mA) 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 21. Input Voltage versus Output Current http://onsemi.com 984 MUN5111DW1T1 Series TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5115DW1T1 HFE, DC CURRENT GAIN (NORMALIZED) 1000 TA = 25C VCE = 10 V VCE = 5.0 V 100 1.0 10 IC, COLLECTOR CURRENT (mA) 100 Figure 22. DC Current Gain TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5116DW1T1 HFE, DC CURRENT GAIN (NORMALIZED) 1000 TA = 25C VCE = 10 V VCE = 5.0 V 100 1.0 10 IC, COLLECTOR CURRENT (mA) Figure 23. DC Current Gain http://onsemi.com 985 100 MUN5111DW1T1 Series VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 0.1 75C 25C -25C IC/IB = 10 0.01 0 1 2 3 4 5 IC, COLLECTOR CURRENT (mA) 6 7 hFE, DC CURRENT GAIN (NORMALIZED) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5136DW1T1 1000 75C TA = -25C 100 25C 10 VCE = 10 V 1 1 10 IC, COLLECTOR CURRENT (mA) Figure 24. Maximum Collector Voltage versus Collector Current Figure 25. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 1.0 f = 1 MHz IE = 0 V TA = 25C 0.8 0.6 0.4 0.2 25C 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 60 TA = -25C 1 VO = 5 V 0 1 2 3 4 TA = -25C 10 VO = 0.2 V 75C 0 2 6 7 8 9 10 Figure 27. Output Current versus Input Voltage 100 1 5 Vin, INPUT VOLTAGE (VOLTS) Figure 26. Output Capacitance 25C 75C 10 0.1 0 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 1.2 0 100 4 6 8 10 12 14 16 IC, COLLECTOR CURRENT (mA) 18 Figure 28. Input Voltage versus Output Current http://onsemi.com 986 20 MUN5111DW1T1 Series VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 TA = -25C 75C 0.1 25C IC/IB = 10 0.01 0 5 10 15 20 25 30 35 40 IC, COLLECTOR CURRENT (mA) 45 50 hFE, DC CURRENT GAIN (NORMALIZED) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5137DW1T1 1000 75C TA = -25C 100 25C VCE = 10 V 10 1 10 IC, COLLECTOR CURRENT (mA) Figure 29. Maximum Collector Voltage versus Collector Current Figure 30. DC Current Gain 100 1.2 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25C 1.0 0.8 0.6 0.4 0.2 75C 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 60 TA = -25C 10 25C 1 0.1 0.01 0.001 0 VO = 5 V 0 1 2 3 4 VO = 0.2 V 1 TA = -25C 75C 25C 0 6 7 8 9 10 11 Figure 32. Output Current versus Input Voltage 100 10 5 Vin, INPUT VOLTAGE (VOLTS) Figure 31. Output Capacitance Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 1.4 0 100 5 10 15 20 IC, COLLECTOR CURRENT (mA) 25 Figure 33. Input Voltage versus Output Current http://onsemi.com 987 MUN5111T1 Series Preferred Devices Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. * * * * * Simplifies Circuit Design Reduces Board Space Reduces Component Count The SC-70/SOT-323 package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. Available in 8 mm embossed tape and reel Use the Device Number to order the 7 inch/3000 unit reel. Replace "T1" with "T3" in the Device Number to order the 13 inch/10,000 unit reel. http://onsemi.com PNP SILICON BIAS RESISTOR TRANSISTORS PIN 1 BASE (INPUT) Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc PIN 2 EMITTER (GROUND) 2 SC-70/SOT-323 CASE 419 STYLE 3 THERMAL CHARACTERISTICS Characteristic R2 1 Symbol Collector Current R1 3 MAXIMUM RATINGS (TA = 25C unless otherwise noted) Rating PIN 3 COLLECTOR (OUTPUT) MARKING DIAGRAM Symbol Max Unit PD 202 (Note 1.) 310 (Note 2.) 1.6 (Note 1.) 2.5 (Note 2.) mW Total Device Dissipation TA = 25C Derate above 25C 6x M C/W Thermal Resistance - Junction-to-Ambient RJA 618 (Note 1.) 403 (Note 2.) C/W Thermal Resistance - Junction-to-Lead RJL 280 (Note 1.) 332 (Note 2.) C/W Junction and Storage Temperature Range TJ, Tstg -55 to +150 C 6x x M = Specific Device Code = (See Marking Table) = Date Code DEVICE MARKING INFORMATION See specific marking information in the device marking table on page 989 of this data sheet. 1. FR-4 @ Minimum Pad 2. FR-4 @ 1.0 x 1.0 inch Pad Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 January, 2001 - Rev. 4 988 Publication Order Number: MUN5111T1/D MUN5111T1 Series DEVICE MARKING AND RESISTOR VALUES Device Package Marking R1 (K) R2 (K) Shipping MUN5111T1 SC-70/SOT-323 6A 10 10 3000/Tape & Reel MUN5112T1 SC-70/SOT-323 6B 22 22 3000/Tape & Reel MUN5113T1 MUN5113T3 SC-70/SOT-323 6C 47 47 3000/Tape & Reel 10,000/Tape & Reel MUN5114T1 SC-70/SOT-323 6D 10 47 3000/Tape & Reel MUN5115T1 (Note 3.) SC-70/SOT-323 6E 10 3000/Tape & Reel MUN5116T1 (Note 3.) SC-70/SOT-323 6F 4.7 3000/Tape & Reel MUN5130T1 (Note 3.) SC-70/SOT-323 6G 1.0 1.0 3000/Tape & Reel MUN5131T1 (Note 3.) SC-70/SOT-323 6H 2.2 2.2 3000/Tape & Reel MUN5132T1 (Note 3.) SC-70/SOT-323 6J 4.7 4.7 3000/Tape & Reel MUN5133T1 (Note 3.) SC-70/SOT-323 6K 4.7 47 3000/Tape & Reel MUN5134T1 (Note 3.) SC-70/SOT-323 6L 22 47 3000/Tape & Reel MUN5135T1 (Note 3.) SC-70/SOT-323 6M 2.2 47 3000/Tape & Reel MUN5136T1 SC-70/SOT-323 6N 100 100 3000/Tape & Reel MUN5137T1 SC-70/SOT-323 6P 47 22 3000/Tape & Reel 3. New devices. Updated curves to follow in subsequent data sheets. http://onsemi.com 989 MUN5111T1 Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO - - 100 nAdc Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO - - 500 nAdc Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO - - - - - - - - - - - - - - - - - - - - - - - - - - - - 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 0.05 0.13 mAdc Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) V(BR)CBO 50 - - Vdc Collector-Emitter Breakdown Voltage (Note 4.) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 - - Vdc hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 80 60 100 140 140 250 250 5.0 15 27 140 130 140 150 140 - - - - - - - - - - - - - - VCE(sat) - - 0.25 - - - - - - - - - - - - - - - - - - - - - - - - - - - - 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 OFF CHARACTERISTICS MUN5111T1 MUN5112T1 MUN5113T1 MUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1 MUN5131T1 MUN5132T1 MUN5133T1 MUN5134T1 MUN5135T1 MUN5136T1 MUN5137T1 ON CHARACTERISTICS (Note 4.) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN5111T1 MUN5112T1 MUN5113T1 MUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1 MUN5131T1 MUN5132T1 MUN5133T1 MUN5134T1 MUN5135T1 MUN5136T1 MUN5137T1 Collector-Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA) (IC = 10 mA, IB = 5 mA) MUN5130T1/MUN5131T1 (IC = 10 mA, IB = 1 mA) MUN5115T1/MUN5116T1/ MUN5132T1/MUN5133T1/MUN5134T1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 5.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 k) VOL MUN5111T1 MUN5112T1 MUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1 MUN5131T1 MUN5132T1 MUN5133T1 MUN5134T1 MUN5135T1 MUN5113T1 MUN5136T1 MUN5137T1 4. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% http://onsemi.com 990 Vdc Vdc MUN5111T1 Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k) MUN5130T1 MUN5115T1 (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k) MUN5116T1 MUN5131T1 MUN5132T1 VOH 4.9 - - Vdc R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 70 32.9 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 47 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 130 61.1 k 0.8 0.17 - 0.8 0.055 0.38 0.038 1.7 1.0 0.21 - 1.0 0.1 0.47 0.047 2.1 1.2 0.25 - 1.2 0.185 0.56 0.056 2.6 Input Resistor MUN5111T1 MUN5112T1 MUN5113T1 MUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1 MUN5131T1 MUN5132T1 MUN5133T1 MUN5134T1 MUN5135T1 MUN5136T1 MUN5137T1 Resistor Ratio MUN5111T1/MUN5112T1/MUN5113T1/ MUN5136T1 MUN5114T1 MUN5115T1/MUN5116T1 MUN5130T1/MUN5131T1/MUN5132T1 MUN5133T1 MUN5134T1 MUN5135T1 MUN5137T1 R1/R2 PD , POWER DISSIPATION (MILLIWATTS) 250 200 150 100 50 0 -50 RJA = 833C/W 0 50 100 TA, AMBIENT TEMPERATURE (C) Figure 1. Derating Curve http://onsemi.com 991 150 MUN5111T1 Series 1000 1 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN5111T1 TA=-25C 0.1 25C 75C 0.01 0 20 25C 100 10 -25C 10 IC, COLLECTOR CURRENT (mA) Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 50 1 100 3 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25C 2 1 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 100 TA=-25C 1 0.1 0.01 VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=-25C 25C 75C 1 0 10 8 9 Figure 5. Output Current versus Input Voltage 10 0.1 100 25C 75C 10 0.001 50 Figure 4. Output Capacitance V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) TA=75C IC, COLLECTOR CURRENT (mA) 40 4 0 VCE = 10 V 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 6. Input Voltage versus Output Current http://onsemi.com 992 10 MUN5111T1 Series 1000 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN5112T1 IC/IB = 10 1 25C TA=-25C 75C 0.1 0.01 0 40 20 IC, COLLECTOR CURRENT (mA) TA=75C 10 1 Figure 8. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 3 2 1 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) TA=-25C 10 1 0.1 0.01 0.001 50 Figure 9. Output Capacitance 100 25C 75C f = 1 MHz lE = 0 V TA = 25C V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 4 0 VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V 10 25C 75C 1 0 10 8 9 Figure 10. Output Current versus Input Voltage TA=-25C 0.1 100 IC, COLLECTOR CURRENT (mA) Figure 7. VCE(sat) versus IC 0 25C -25C 100 10 50 VCE = 10 V 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 11. Input Voltage versus Output Current http://onsemi.com 993 10 MUN5111T1 Series 1 1000 IC/IB = 10 TA=-25C 25C 75C 0.1 0.01 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN5113T1 0 10 20 30 IC, COLLECTOR CURRENT (mA) TA=75C 25C -25C 100 10 40 1 10 IC, COLLECTOR CURRENT (mA) Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 1 IC, COLLECTOR CURRENT (mA) 0.6 0.4 0.2 0 0 -25C 1 0.1 0.01 Figure 14. Output Capacitance VO = 5 V 1 0 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=-25C 25C 75C 1 0.1 0 10 8 9 Figure 15. Output Current versus Input Voltage 100 10 25C TA=75C 10 0.001 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 100 f = 1 MHz lE = 0 V TA = 25C 0.8 100 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 16. Input Voltage versus Output Current http://onsemi.com 994 10 MUN5111T1 Series 1 180 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN5114T1 TA=-25C 25C 0.1 75C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 25C 140 -25C 120 100 80 60 40 20 0 80 TA=75C VCE = 10 V 160 2 1 4 6 Figure 17. VCE(sat) versus IC 100 3.5 IC, COLLECTOR CURRENT (mA) Cob , CAPACITANCE (pF) TA=75C f = 1 MHz lE = 0 V TA = 25C 4 3 2.5 2 1.5 1 0.5 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 50 Figure 19. Output Capacitance 25C -25C 10 VO = 5 V 1 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 20. Output Current versus Input Voltage +12 V 10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) 80 90 100 Figure 18. DC Current Gain 4.5 0 8 10 15 20 40 50 60 70 IC, COLLECTOR CURRENT (mA) 25C 75C TA=-25C Typical Application for PNP BRTs 1 LOAD 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 21. Input Voltage versus Output Current Figure 22. Inexpensive, Unregulated Current Source http://onsemi.com 995 MUN5111T1 Series VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 0.1 75C 25C -25C IC/IB = 10 0.01 0 1 2 3 4 5 IC, COLLECTOR CURRENT (mA) 6 7 hFE, DC CURRENT GAIN (NORMALIZED) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5136T1 1000 75C TA = -25C 100 25C 10 VCE = 10 V 1 1 10 IC, COLLECTOR CURRENT (mA) Figure 23. Maximum Collector Voltage versus Collector Current Figure 24. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 1.0 f = 1 MHz IE = 0 V TA = 25C 0.8 0.6 0.4 0.2 25C 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 60 TA = -25C 1 VO = 5 V 0 1 2 3 4 TA = -25C 10 VO = 0.2 V 75C 0 2 6 7 8 9 10 Figure 26. Output Current versus Input Voltage 100 1 5 Vin, INPUT VOLTAGE (VOLTS) Figure 25. Output Capacitance 25C 75C 10 0.1 0 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 1.2 0 100 4 6 8 10 12 14 16 IC, COLLECTOR CURRENT (mA) 18 Figure 27. Input Voltage versus Output Current http://onsemi.com 996 20 MUN5111T1 Series VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 TA = -25C 75C 0.1 25C IC/IB = 10 0.01 0 5 10 15 20 25 30 35 40 IC, COLLECTOR CURRENT (mA) 45 50 hFE, DC CURRENT GAIN (NORMALIZED) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5137T1 1000 75C TA = -25C 100 25C VCE = 10 V 10 1 10 IC, COLLECTOR CURRENT (mA) Figure 28. Maximum Collector Voltage versus Collector Current Figure 29. DC Current Gain 100 1.2 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25C 1.0 0.8 0.6 0.4 0.2 75C 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 60 TA = -25C 10 25C 1 0.1 0.01 0.001 0 VO = 5 V 0 1 2 3 4 VO = 0.2 V 1 TA = -25C 75C 25C 0 6 7 8 9 10 11 Figure 31. Output Current versus Input Voltage 100 10 5 Vin, INPUT VOLTAGE (VOLTS) Figure 30. Output Capacitance Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 1.4 0 100 5 10 15 20 IC, COLLECTOR CURRENT (mA) 25 Figure 32. Input Voltage versus Output Current http://onsemi.com 997 MUN5211DW1T1 Series Preferred Devices Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5211DW1T1 series, two BRT devices are housed in the SOT-363 package which is ideal for low power surface mount applications where board space is at a premium. * * * * (3) (2) R1 Q2 R2 R1 (4) (5) (6) 6 5 4 1 MAXIMUM RATINGS (TA = 25C unless otherwise noted, common for Q1 and Q2) Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc Symbol Max Unit PD 187 (Note 1.) 256 (Note 2.) 1.5 (Note 1.) 2.0 (Note 2.) mW Collector Current R2 Q1 Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7 inch/3000 Unit Tape and Reel Rating (1) 2 3 SOT-363 CASE 419B STYLE 1 MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic (One Junction Heated) 7x Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance - Junction-to-Ambient Characteristic (Both Junctions Heated) mW/C RJA 670 (Note 1.) 490 (Note 2.) C/W Symbol Max Unit PD 250 (Note 1.) 385 (Note 2.) 2.0 (Note 1.) 3.0 (Note 2.) mW = Device Marking = (See Page 999) DEVICE MARKING INFORMATION Total Device Dissipation TA = 25C Derate above 25C mW/C Thermal Resistance - Junction-to-Ambient RJA 493 (Note 1.) 325 (Note 2.) C/W Thermal Resistance - Junction-to-Lead RJL 188 (Note 1.) 208 (Note 2.) C/W TJ, Tstg -55 to +150 C Junction and Storage Temperature 7x See specific marking information in the device marking table on page 999 of this data sheet. Preferred devices are recommended choices for future use and best overall value. 1. FR-4 @ Minimum Pad 2. FR-4 @ 1.0 x 1.0 inch Pad Semiconductor Components Industries, LLC, 2001 January, 2001 - Rev. 3 998 Publication Order Number: MUN5211DW1T1/D MUN5211DW1T1 Series DEVICE MARKING AND RESISTOR VALUES Device Package Marking R1 (K) R2 (K) Shipping MUN5211DW1T1 SOT-363 7A 10 10 3000/Tape & Reel MUN5212DW1T1 SOT-363 7B 22 22 3000/Tape & Reel MUN5213DW1T1 SOT-363 7C 47 47 3000/Tape & Reel MUN5214DW1T1 SOT-363 7D 10 47 3000/Tape & Reel MUN5215DW1T1 (Note 3.) SOT-363 7E 10 3000/Tape & Reel MUN5216DW1T1 (Note 3.) SOT-363 7F 4.7 3000/Tape & Reel MUN5230DW1T1 (Note 3.) SOT-363 7G 1.0 1.0 3000/Tape & Reel MUN5231DW1T1 (Note 3.) SOT-363 7H 2.2 2.2 3000/Tape & Reel MUN5232DW1T1 (Note 3.) SOT-363 7J 4.7 4.7 3000/Tape & Reel MUN5233DW1T1 (Note 3.) SOT-363 7K 4.7 47 3000/Tape & Reel MUN5234DW1T1 (Note 3.) SOT-363 7L 22 47 3000/Tape & Reel MUN5235DW1T1 (Note 3.) SOT-363 7M 2.2 47 3000/Tape & Reel MUN5236DW1T1 (Note 3.) SOT-363 7N 100 100 3000/Tape & Reel MUN5237DW1T1 (Note 3.) SOT-363 7P 47 22 3000/Tape & Reel ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, common for Q1 and Q2) Characteristic Symbol Min Typ Max Unit Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO - - 100 nAdc Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO - - 500 nAdc Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO - - - - - - - - - - - - - - - - - - - - - - - - - - - - 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 0.05 0.13 mAdc Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) V(BR)CBO 50 - - Vdc Collector-Emitter Breakdown Voltage (Note 4.) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 - - Vdc OFF CHARACTERISTICS MUN5211DW1T1 MUN5212DW1T1 MUN5213DW1T1 MUN5214DW1T1 MUN5215DW1T1 MUN5216DW1T1 MUN5230DW1T1 MUN5231DW1T1 MUN5232DW1T1 MUN5233DW1T1 MUN5234DW1T1 MUN5235DW1T1 MUN5236DW1T1 MUN5237DW1T1 3. New resistor combinations. Updated curves to follow in subsequent data sheets. 4. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% http://onsemi.com 999 MUN5211DW1T1 Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, common for Q1 and Q2) (Continued) Characteristic Symbol Min Typ Max hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 80 60 100 140 140 350 350 5.0 15 30 200 150 140 150 140 - - - - - - - - - - - - - - VCE(sat) - - 0.25 - - - - - - - - - - - - - - - - - - - - - - - - - - - - 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 4.9 - - Unit ON CHARACTERISTICS (Note 5.) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN5211DW1T1 MUN5212DW1T1 MUN5213DW1T1 MUN5214DW1T1 MUN5215DW1T1 MUN5216DW1T1 MUN5230DW1T1 MUN5231DW1T1 MUN5232DW1T1 MUN5233DW1T1 MUN5234DW1T1 MUN5235DW1T1 MUN5236DW1T1 MUN5237DW1T1 Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 5 mA) MUN5230DW1T1/MUN5231DW1T1 (IC = 10 mA, IB = 1 mA) MUN5215DW1T1/MUN5216DW1T1 MUN5232DW1T1/MUN5233DW1T1/MUN5234DW1T1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 5.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 k) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k) VOL MUN5211DW1T1 MUN5212DW1T1 MUN5214DW1T1 MUN5215DW1T1 MUN5216DW1T1 MUN5230DW1T1 MUN5231DW1T1 MUN5232DW1T1 MUN5233DW1T1 MUN5234DW1T1 MUN5235DW1T1 MUN5213DW1T1 MUN5236DW1T1 MUN5237DW1T1 VOH MUN5230DW1T1 MUN5215DW1T1 MUN5216DW1T1 MUN5233DW1T1 5. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% http://onsemi.com 1000 Vdc Vdc Vdc MUN5211DW1T1 Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, common for Q1 and Q2) (Continued) Characteristic Symbol Min Typ Max Unit R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 70 32.9 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 47 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 130 61.1 k 0.8 0.17 - 0.8 0.055 0.38 0.038 1.7 1.0 0.21 - 1.0 0.1 0.47 0.047 2.1 1.2 0.25 - 1.2 0.185 0.56 0.056 2.6 ON CHARACTERISTICS (Note 6.) (Continued) Input Resistor MUN5211DW1T1 MUN5212DW1T1 MUN5213DW1T1 MUN5214DW1T1 MUN5215DW1T1 MUN5216DW1T1 MUN5230DW1T1 MUN5231DW1T1 MUN5232DW1T1 MUN5233DW1T1 MUN5234DW1T1 MUN5235DW1T1 MUN5236DW1T1 MUN5237DW1T1 Resistor Ratio MUN5211DW1T1/MUN5212DW1T1/ MUN5213DW1T1/MUN5236DW1T1 MUN5214DW1T1 MUN5215DW1T1/MUN5216DW1T1 MUN5230DW1T1/MUN5231DW1T1/MUN5232DW1T1 MUN5233DW1T1 MUN5234DW1T1 MUN5235DW1T1 MUN5237DW1T1 R1/R2 6. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% PD, POWER DISSIPATION (mW) 300 250 200 150 100 50 0 -50 RJA = 833C/W 0 50 100 TA, AMBIENT TEMPERATURE (C) Figure 1. Derating Curve http://onsemi.com 1001 150 MUN5211DW1T1 Series 1 1000 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5211DW1T1 TA=-25C 25C 0.1 75C 0 20 40 IC, COLLECTOR CURRENT (mA) TA=75C 25C -25C 100 0.01 0.001 VCE = 10 V 10 50 1 10 IC, COLLECTOR CURRENT (mA) Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 2 1 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 25C 75C f = 1 MHz IE = 0 V TA = 25C 50 TA=-25C 10 1 0.1 0.01 0.001 VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 10 VO = 0.2 V TA=-25C 25C 75C 1 0.1 0 10 8 9 Figure 5. Output Current versus Input Voltage Figure 4. Output Capacitance V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 4 3 100 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 6. Input Voltage versus Output Current http://onsemi.com 1002 50 10 MUN5211DW1T1 Series 1000 1 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5212DW1T1 IC/IB = 10 25C TA=-25C 0.1 75C 0.01 0.001 0 20 -25C 100 1 100 10 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 4 100 3 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25C 2 1 75C 25C TA=-25C 10 1 0.1 0.01 VO = 5 V 0 0 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 0.001 Figure 9. Output Capacitance 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=-25C 10 25C 75C 1 0.1 0 10 8 10 Figure 10. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) TA=75C 25C 10 50 40 VCE = 10 V 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 11. Input Voltage versus Output Current http://onsemi.com 1003 MUN5211DW1T1 Series 10 1000 IC/IB = 10 1 25C TA=-25C 0.01 0 25C -25C 10 50 20 40 IC, COLLECTOR CURRENT (mA) TA=75C 100 75C 0.1 VCE = 10 V hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5213DW1T1 10 IC, COLLECTOR CURRENT (mA) 1 Figure 12. VCE(sat) versus IC 1 100 IC, COLLECTOR CURRENT (mA) 0.4 TA=-25C 10 1 0.1 0.01 0.2 0 25C 75C 0.6 0 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 0.001 VO = 5 V 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 100 VO = 0.2 V TA=-25C 10 25C 75C 1 0.1 0 10 8 10 Figure 15. Output Current versus Input Voltage Figure 14. Output Capacitance V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) Figure 13. DC Current Gain f = 1 MHz IE = 0 V TA = 25C 0.8 100 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 16. Input Voltage versus Output Current http://onsemi.com 1004 MUN5211DW1T1 Series 1 300 IC/IB = 10 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5214DW1T1 TA=-25C 25C 0.1 75C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) TA=75C VCE = 10 250 25C 200 -25C 150 100 50 0 80 2 1 4 6 Figure 17. VCE(sat) versus IC 100 f = 1 MHz lE = 0 V TA = 25C 3 TA=75C IC, COLLECTOR CURRENT (mA) 3.5 2.5 2 1.5 1 0.5 0 2 4 6 8 10 15 20 25 30 35 VR, REVERSE BIAS VOLTAGE (VOLTS) 40 45 10 VO = 5 V 1 50 25C -25C 0 Figure 19. Output Capacitance 2 4 6 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=-25C 25C 75C 1 0.1 0 10 8 Figure 20. Output Current versus Input Voltage 10 V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 90 100 Figure 18. DC Current Gain 4 0 8 10 15 20 40 50 60 70 80 IC, COLLECTOR CURRENT (mA) 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 21. Input Voltage versus Output Current http://onsemi.com 1005 50 10 MUN5211T1 Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. * * * * * Simplifies Circuit Design Reduces Board Space Reduces Component Count The SC-70/SOT-323 package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. Available in 8 mm embossed tape and reel Use the Device Number to order the 7 inch/3000 unit reel. http://onsemi.com NPN SILICON BIAS RESISTOR TRANSISTORS PIN 1 BASE (INPUT) PIN 3 COLLECTOR (OUTPUT) R1 R2 PIN 2 EMITTER (GROUND) 3 MAXIMUM RATINGS (TA = 25C unless otherwise noted) Rating Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc SC-70/SOT-323 CASE 419 STYLE 3 Symbol Max Unit MARKING DIAGRAM PD 202 (Note 1.) 310 (Note 2.) 1.6 (Note 1.) 2.5 (Note 2.) mW Collector Current 1 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25C Derate above 25C mW/C Thermal Resistance - Junction-to-Ambient RJA 618 (Note 1.) 403 (Note 2.) C/W Thermal Resistance - Junction-to-Lead RJL 280 (Note 1.) 332 (Note 2.) C/W Junction and Storage Temperature Range TJ, Tstg -55 to +150 C 8x M 8x x M = Specific Device Code = (See Marking Table) = Date Code DEVICE MARKING INFORMATION 1. FR-4 @ Minimum Pad 2. FR-4 @ 1.0 x 1.0 inch Pad See specific marking information in the device marking table on page 1007 of this data sheet. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 January, 2001 - Rev. 4 1006 Publication Order Number: MUN5211T1/D MUN5211T1 Series DEVICE MARKING AND RESISTOR VALUES Device Package Marking R1 (K) R2 (K) Shipping MUN5211T1 SC-70/SOT-323 8A 10 10 3000/Tape & Reel MUN5212T1 SC-70/SOT-323 8B 22 22 3000/Tape & Reel MUN5213T1 SC-70/SOT-323 8C 47 47 3000/Tape & Reel MUN5214T1 SC-70/SOT-323 8D 10 47 3000/Tape & Reel MUN5215T1 (Note 3.) SC-70/SOT-323 8E 10 3000/Tape & Reel MUN5216T1 (Note 3.) SC-70/SOT-323 8F 4.7 3000/Tape & Reel MUN5230T1 (Note 3.) SC-70/SOT-323 8G 1.0 1.0 3000/Tape & Reel MUN5231T1 (Note 3.) SC-70/SOT-323 8H 2.2 2.2 3000/Tape & Reel MUN5232T1 (Note 3.) SC-70/SOT-323 8J 4.7 4.7 3000/Tape & Reel MUN5233T1 (Note 3.) SC-70/SOT-323 8K 4.7 47 3000/Tape & Reel MUN5234T1 (Note 3.) SC-70/SOT-323 8L 22 47 3000/Tape & Reel MUN5235T1 (Note 3.) SC-70/SOT-323 8M 2.2 47 3000/Tape & Reel MUN5236T1 (Note 3.) SC-70/SOT-323 8N 100 100 3000/Tape & Reel MUN5237T1 (Note 3.) SC-70/SOT-323 8P 47 22 3000/Tape & Reel 3. New devices. Updated curves to follow in subsequent data sheets. http://onsemi.com 1007 MUN5211T1 Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO - - 100 nAdc Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO - - 500 nAdc Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO - - - - - - - - - - - - - - - - - - - - - - - - - - - - 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 0.05 0.13 mAdc Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) V(BR)CBO 50 - - Vdc Collector-Emitter Breakdown Voltage (Note 4.) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 - - Vdc hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 80 60 100 140 140 350 350 5.0 15 30 200 150 140 150 140 - - - - - - - - - - - - - - VCE(sat) - - 0.25 - - - - - - - - - - - - - - - - - - - - - - - - - - - - 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 OFF CHARACTERISTICS MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 MUN5232T1 MUN5233T1 MUN5234T1 MUN5235T1 MUN5236T1 MUN5237T1 ON CHARACTERISTICS (Note 4.) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 MUN5232T1 MUN5233T1 MUN5234T1 MUN5235T1 MUN5236T1 MUN5237T1 Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 5 mA) MUN5230T1/MUN5231T1 (IC = 10 mA, IB = 1 mA) MUN5215T1/MUN5216T1/ MUN5232T1/MUN5233T1/MUN5234T1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 5.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 k) VOL MUN5211T1 MUN5212T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 MUN5232T1 MUN5233T1 MUN5234T1 MUN5235T1 MUN5213T1 MUN5236T1 MUN5237T1 4. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% http://onsemi.com 1008 Vdc Vdc MUN5211T1 Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit VOH 4.9 - - Vdc R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 70 32.9 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 47 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 130 61.1 k 0.8 0.17 - 0.8 0.055 0.38 0.038 1.7 1.0 0.21 - 1.0 0.1 0.47 0.047 2.1 1.2 0.25 - 1.2 0.185 0.56 0.056 2.6 ON CHARACTERISTICS (Note 5.) (Continued) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k) MUN5230T1 MUN5215T1 (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k) MUN5216T1 MUN5233T1 Input Resistor Resistor Ratio MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 MUN5232T1 MUN5233T1 MUN5234T1 MUN5235T1 MUN5236T1 MUN5237T1 MUN5211T1/MUN5212T1/MUN5213T1/ MUN5236T1 MUN5214T1 MUN5215T1/MUN5216T1 MUN5230T1/MUN5231T1/MUN5232T1 MUN5233T1 MUN5234T1 MUN5235T1 MUN5237T1 R1/R2 5. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% PD, POWER DISSIPATION (mW) 350 300 250 200 150 100 50 0 -50 RJA = 403C/W 0 50 100 TA, AMBIENT TEMPERATURE (C) Figure 1. Derating Curve http://onsemi.com 1009 150 MUN5211T1 Series 1 1000 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN5211T1 TA=-25C 25C 0.1 75C 0 20 40 IC, COLLECTOR CURRENT (mA) TA=75C 25C -25C 100 0.01 0.001 VCE = 10 V 10 50 1 10 IC, COLLECTOR CURRENT (mA) Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 2 1 0 25C 75C f = 1 MHz IE = 0 V TA = 25C TA=-25C 10 1 0.1 0.01 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 10 VO = 0.2 V TA=-25C 25C 75C 1 0.1 0 10 8 9 Figure 5. Output Current versus Input Voltage Figure 4. Output Capacitance V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 4 3 100 40 20 30 IC, COLLECTOR CURRENT (mA) Figure 6. Input Voltage versus Output Current http://onsemi.com 1010 50 10 MUN5211T1 Series 1000 1 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN5212T1 IC/IB = 10 25C TA=-25C 0.1 75C 0.01 0.001 0 20 -25C 100 1 100 10 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 4 100 3 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25C 2 1 75C 25C TA=-25C 10 1 0.1 0.01 VO = 5 V 0 0 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 0.001 Figure 9. Output Capacitance 2 0 4 6 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=-25C 10 25C 75C 1 0.1 0 10 8 10 Figure 10. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) TA=75C 25C 10 50 40 VCE = 10 V 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 11. Input Voltage versus Output Current http://onsemi.com 1011 MUN5211T1 Series 10 1000 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN5213T1 1 25C TA=-25C 75C 0.1 0.01 0 TA=75C 25C -25C 100 10 50 20 40 IC, COLLECTOR CURRENT (mA) VCE = 10 V 10 IC, COLLECTOR CURRENT (mA) 1 Figure 12. VCE(sat) versus IC 1 100 IC, COLLECTOR CURRENT (mA) 0.4 0.2 0 0 25C 75C 0.6 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) TA=-25C 10 1 0.1 0.01 0.001 Figure 14. Output Capacitance VO = 5 V 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=-25C 10 25C 75C 1 0.1 0 10 8 10 Figure 15. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) Figure 13. DC Current Gain f = 1 MHz IE = 0 V TA = 25C 0.8 100 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 16. Input Voltage versus Output Current http://onsemi.com 1012 MUN5211T1 Series 1 300 IC/IB = 10 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN5214T1 TA=-25C 25C 0.1 75C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 25C 200 -25C 150 100 50 0 80 TA=75C VCE = 10 250 2 1 4 6 Figure 17. VCE(sat) versus IC 100 f = 1 MHz lE = 0 V TA = 25C 3 TA=75C IC, COLLECTOR CURRENT (mA) 3.5 2.5 2 1.5 1 0.5 0 2 4 6 8 10 15 20 25 30 35 VR, REVERSE BIAS VOLTAGE (VOLTS) 40 45 25C -25C 10 VO = 5 V 1 50 Figure 19. Output Capacitance 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=-25C 25C 75C 1 0.1 0 10 8 Figure 20. Output Current versus Input Voltage 10 V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 90 100 Figure 18. DC Current Gain 4 0 8 10 15 20 40 50 60 70 80 IC, COLLECTOR CURRENT (mA) 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 21. Input Voltage versus Output Current http://onsemi.com 1013 50 10 MUN5211T1 Series TYPICAL APPLICATIONS FOR NPN BRTs +12 V ISOLATED LOAD FROM P OR OTHER LOGIC Figure 22. Level Shifter: Connects 12 or 24 Volt Circuits to Logic +12 V VCC OUT IN LOAD Figure 23. Open Collector Inverter: Inverts the Input Signal Figure 24. Inexpensive, Unregulated Current Source http://onsemi.com 1014 MUN5311DW1T1 Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5311DW1T1 series, two complementary BRT devices are housed in the SOT-363 package which is ideal for low power surface mount applications where board space is at a premium. * * * * (3) (2) R1 Q2 R2 R1 (4) (5) (6) 6 5 4 1 and Q2, - minus sign for Q1 (PNP) omitted) Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc 2 3 SOT-363 CASE 419B STYLE 1 MAXIMUM RATINGS (TA = 25C unless otherwise noted, common for Q1 Collector Current R2 Q1 Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7 inch/3000 Unit Tape and Reel Rating (1) MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic (One Junction Heated) xx Symbol Max Unit PD 187 (Note 1.) 256 (Note 2.) 1.5 (Note 1.) 2.0 (Note 2.) mW Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance - Junction-to-Ambient Characteristic (Both Junctions Heated) mW/C RJA 670 (Note 1.) 490 (Note 2.) C/W Symbol Max Unit Total Device Dissipation TA = 25C Derate above 25C PD 250 (Note 1.) 385 (Note 2.) 2.0 (Note 1.) 3.0 (Note 2.) mW = Device Marking = (See Page 1016) DEVICE MARKING INFORMATION See specific marking information in the device marking table on page 1016 of this data sheet. mW/C Thermal Resistance - Junction-to-Ambient RJA 493 (Note 1.) 325 (Note 2.) C/W Thermal Resistance - Junction-to-Lead RJL 188 (Note 1.) 208 (Note 2.) C/W TJ, Tstg -55 to +150 C Junction and Storage Temperature xx Preferred devices are recommended choices for future use and best overall value. 1. FR-4 @ Minimum Pad 2. FR-4 @ 1.0 x 1.0 inch Pad Semiconductor Components Industries, LLC, 2001 January, 2001 - Rev. 6 1015 Publication Order Number: MUN5311DW1T1/D MUN5311DW1T1 Series DEVICE MARKING AND RESISTOR VALUES Device Package Marking R1 (K) R2 (K) Shipping MUN5311DW1T1 SOT-363 11 10 10 3000/Tape & Reel MUN5312DW1T1 SOT-363 12 22 22 3000/Tape & Reel MUN5313DW1T1 SOT-363 13 47 47 3000/Tape & Reel MUN5314DW1T1 SOT-363 14 10 47 3000/Tape & Reel MUN5315DW1T1 (Note 3.) SOT-363 15 10 3000/Tape & Reel MUN5316DW1T1 (Note 3.) SOT-363 16 4.7 3000/Tape & Reel MUN5330DW1T1 (Note 3.) SOT-363 30 1.0 1.0 3000/Tape & Reel MUN5331DW1T1 (Note 3.) SOT-363 31 2.2 2.2 3000/Tape & Reel MUN5332DW1T1 (Note 3.) SOT-363 32 4.7 4.7 3000/Tape & Reel MUN5333DW1T1 (Note 3.) SOT-363 33 4.7 47 3000/Tape & Reel MUN5334DW1T1 (Note 3.) SOT-363 34 22 47 3000/Tape & Reel MUN5335DW1T1 (Note 3.) SOT-363 35 2.2 47 3000/Tape & Reel ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, common for Q1 and Q2, - minus sign for Q1 (PNP) omitted) Symbol Min Typ Max Unit Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO - - 100 nAdc Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO - - 500 nAdc Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO - - - - - - - - - - - - - - - - - - - - - - - - 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 mAdc Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) V(BR)CBO 50 - - Vdc Collector-Emitter Breakdown Voltage (Note 4.) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 - - Vdc Characteristic OFF CHARACTERISTICS MUN5311DW1T1 MUN5312DW1T1 MUN5313DW1T1 MUN5314DW1T1 MUN5315DW1T1 MUN5316DW1T1 MUN5330DW1T1 MUN5331DW1T1 MUN5332DW1T1 MUN5333DW1T1 MUN5334DW1T1 MUN5335DW1T1 3. New resistor combinations. Updated curves to follow in subsequent data sheets. 4. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% http://onsemi.com 1016 MUN5311DW1T1 Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, common for Q1 and Q2, - minus sign for Q1 (PNP) omitted) (Continued) Characteristic Symbol Min Typ Max Unit hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 60 100 140 140 350 350 5.0 15 30 200 150 140 - - - - - - - - - - - - VCE(sat) - - 0.25 - - - - - - - - - - - - - - - - - - - - - - - - 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 VOH 4.9 - - Vdc R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 k R1/R2 0.8 0.17 - 0.8 0.055 0.38 0.038 1.0 0.21 - 1.0 0.1 0.47 0.047 1.2 0.25 - 1.2 0.185 0.56 0.056 ON CHARACTERISTICS (Note 5.) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN5311DW1T1 MUN5312DW1T1 MUN5313DW1T1 MUN5314DW1T1 MUN5315DW1T1 MUN5316DW1T1 MUN5330DW1T1 MUN5331DW1T1 MUN5332DW1T1 MUN5333DW1T1 MUN5334DW1T1 MUN5335DW1T1 Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 5 mA) MUN5330DW1T1/MUN5331DW1T1 (IC = 10 mA, IB = 1 mA) MUN5315DW1T1/MUN5316DW1T1 MUN5332DW1T1/MUN5333DW1T1/MUN5334DW1T1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k) Input Resistor VOL MUN5311DW1T1 MUN5312DW1T1 MUN5314DW1T1 MUN5315DW1T1 MUN5316DW1T1 MUN5330DW1T1 MUN5331DW1T1 MUN5332DW1T1 MUN5333DW1T1 MUN5334DW1T1 MUN5335DW1T1 MUN5313DW1T1 Vdc Vdc MUN5330DW1T1 MUN5315DW1T1 MUN5316DW1T1 MUN5333DW1T1 MUN5311DW1T1 MUN5312DW1T1 MUN5313DW1T1 MUN5314DW1T1 MUN5315DW1T1 MUN5316DW1T1 MUN5330DW1T1 MUN5331DW1T1 MUN5332DW1T1 MUN5333DW1T1 MUN5334DW1T1 MUN5335DW1T1 Resistor Ratio MUN5311DW1T1/MUN5312DW1T1/MUN5313DW1T1 MUN5314DW1T1 MUN5315DW1T1/MUN5316DW1T1 MUN5330DW1T1/MUN5331DW1T1/MUN5332DW1T1 MUN5333DW1T1 MUN5334DW1T1 MUN5335DW1T1 5. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% http://onsemi.com 1017 MUN5311DW1T1 Series PD, POWER DISSIPATION (mW) 300 250 200 150 100 50 0 -50 RJA = 490C/W 0 50 100 TA, AMBIENT TEMPERATURE (C) Figure 1. Derating Curve http://onsemi.com 1018 150 MUN5311DW1T1 Series 1 1000 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN5311DW1T1 NPN TRANSISTOR TA=-25C 25C 0.1 75C 0.01 0.001 0 20 40 IC, COLLECTOR CURRENT (mA) VCE = 10 V TA=75C 25C -25C 100 10 50 1 10 IC, COLLECTOR CURRENT (mA) Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 2 1 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 25C 75C f = 1 MHz IE = 0 V TA = 25C 1 0.1 0.01 VO = 5 V 0.001 50 TA=-25C 10 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 10 VO = 0.2 V TA=-25C 25C 75C 1 0.1 0 10 8 9 Figure 5. Output Current versus Input Voltage Figure 4. Output Capacitance V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 4 3 100 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 6. Input Voltage versus Output Current http://onsemi.com 1019 50 10 MUN5311DW1T1 Series 1000 1 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS TYPICAL ELECTRICAL CHARACTERISTICS - MUN5311DW1T1 PNP TRANSISTOR TA=-25C 0.1 25C 75C 0.01 0 20 25C 100 10 -25C 10 IC, COLLECTOR CURRENT (mA) Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 50 1 100 3 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25C 2 1 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) TA=-25C 10 1 0.1 0.01 0.001 50 100 VO = 5 V 0 1 2 6 7 3 4 5 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=-25C 25C 75C 1 0 10 8 9 Figure 10. Output Current versus Input Voltage 10 0.1 100 25C 75C Figure 9. Output Capacitance V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) TA=75C IC, COLLECTOR CURRENT (mA) 40 4 0 VCE = 10 V 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 11. Input Voltage versus Output Current http://onsemi.com 1020 50 10 MUN5311DW1T1 Series 1000 1 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN5312DW1T1 NPN TRANSISTOR IC/IB = 10 25C TA=-25C 0.1 75C 0.01 0.001 0 20 -25C 100 1 100 10 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 4 100 3 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25C 2 1 75C 25C TA=-25C 10 1 0.1 0.01 VO = 5 V 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 0.001 50 Figure 14. Output Capacitance 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=-25C 10 25C 75C 1 0.1 0 10 8 10 Figure 15. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) TA=75C 25C 10 50 40 VCE = 10 V 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 16. Input Voltage versus Output Current http://onsemi.com 1021 50 MUN5311DW1T1 Series 1000 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN5312DW1T1 PNP TRANSISTOR IC/IB = 10 1 25C TA=-25C 75C 0.1 0.01 0 20 IC, COLLECTOR CURRENT (mA) 40 TA=75C 10 1 Figure 18. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 2 1 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) TA=-25C 10 1 0.1 0.01 0.001 50 Figure 19. Output Capacitance 100 25C 75C f = 1 MHz lE = 0 V TA = 25C V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 4 0 VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V 10 25C 75C 1 0 10 8 9 Figure 20. Output Current versus Input Voltage TA=-25C 0.1 100 IC, COLLECTOR CURRENT (mA) Figure 17. VCE(sat) versus IC 3 25C -25C 100 10 50 VCE = 10 V 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 21. Input Voltage versus Output Current http://onsemi.com 1022 10 MUN5311DW1T1 Series 10 1000 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN5313DW1T1 NPN TRANSISTOR 1 25C TA=-25C 75C 0.1 0.01 0 TA=75C 25C -25C 100 10 50 20 40 IC, COLLECTOR CURRENT (mA) VCE = 10 V 10 IC, COLLECTOR CURRENT (mA) 1 Figure 22. VCE(sat) versus IC 1 100 IC, COLLECTOR CURRENT (mA) 0.4 0.2 0 0 25C 75C 0.6 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) TA=-25C 10 1 0.1 0.01 VO = 5 V 0.001 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 100 VO = 0.2 V TA=-25C 10 25C 75C 1 0.1 0 10 8 10 Figure 25. Output Current versus Input Voltage Figure 24. Output Capacitance V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) Figure 23. DC Current Gain f = 1 MHz IE = 0 V TA = 25C 0.8 100 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 26. Input Voltage versus Output Current http://onsemi.com 1023 MUN5311DW1T1 Series 1 1000 IC/IB = 10 TA=-25C 25C 75C 0.1 0.01 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN5313DW1T1 PNP TRANSISTOR 0 10 20 30 IC, COLLECTOR CURRENT (mA) TA=75C 25C -25C 100 10 40 1 10 IC, COLLECTOR CURRENT (mA) Figure 27. VCE(sat) versus IC Figure 28. DC Current Gain 1 IC, COLLECTOR CURRENT (mA) 0.6 0.4 0.2 0 0 -25C 1 0.1 0.01 Figure 29. Output Capacitance VO = 5 V 1 0 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=-25C 25C 75C 1 0.1 0 10 8 9 Figure 30. Output Current versus Input Voltage 100 10 25C TA=75C 10 0.001 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 100 f = 1 MHz lE = 0 V TA = 25C 0.8 100 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 31. Input Voltage versus Output Current http://onsemi.com 1024 10 MUN5311DW1T1 Series 1 300 IC/IB = 10 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN5314DW1T1 NPN TRANSISTOR TA=-25C 25C 0.1 75C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) TA=75C VCE = 10 250 25C 200 -25C 150 100 50 0 80 2 1 4 6 Figure 32. VCE(sat) versus IC 100 f = 1 MHz lE = 0 V TA = 25C 3 TA=75C IC, COLLECTOR CURRENT (mA) 3.5 2.5 2 1.5 1 0.5 0 2 4 6 8 10 15 20 25 30 35 VR, REVERSE BIAS VOLTAGE (VOLTS) 40 45 25C -25C 10 VO = 5 V 1 50 Figure 34. Output Capacitance 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=-25C 25C 75C 1 0.1 0 10 8 Figure 35. Output Current versus Input Voltage 10 V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 90 100 Figure 33. DC Current Gain 4 0 8 10 15 20 40 50 60 70 80 IC, COLLECTOR CURRENT (mA) 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 36. Input Voltage versus Output Current http://onsemi.com 1025 50 10 MUN5311DW1T1 Series 1 180 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN5314DW1T1 PNP TRANSISTOR TA=-25C 25C 0.1 75C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) TA=75C VCE = 10 V 160 25C 140 -25C 120 100 80 60 40 20 0 80 2 1 4 6 Figure 37. VCE(sat) versus IC 100 TA=75C 3.5 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25C 4 3 2.5 2 1.5 1 0.5 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 10 VO = 5 V 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V 25C TA=-25C 75C 1 0 10 8 10 Figure 40. Output Current versus Input Voltage 10 0.1 25C -25C 1 50 Figure 39. Output Capacitance V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 80 90 100 Figure 38. DC Current Gain 4.5 0 8 10 15 20 40 50 60 70 IC, COLLECTOR CURRENT (mA) 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 41. Input Voltage versus Output Current http://onsemi.com 1026 MUN5311DW1T1 Series TYPICAL ELECTRICAL CHARACTERISTICS - MUN5315DW1T1 HFE, DC CURRENT GAIN (NORMALIZED) 1000 HFE, DC CURRENT GAIN (NORMALIZED) 1000 TA = 25C VCE = 10 V VCE = 5.0 V 100 1.0 10 IC, COLLECTOR CURRENT (mA) 100 100 TA = 25C VCE = 10 V VCE = 5.0 V 1.0 Figure 42. DC Current Gain - PNP 10 IC, COLLECTOR CURRENT (mA) 100 Figure 43. DC Current Gain - NPN TYPICAL ELECTRICAL CHARACTERISTICS - MUN5316DW1T1 HFE, DC CURRENT GAIN (NORMALIZED) 1000 HFE, DC CURRENT GAIN (NORMALIZED) 1000 TA = 25C VCE = 10 V VCE = 5.0 V 100 1.0 10 IC, COLLECTOR CURRENT (mA) 100 100 TA = 25C VCE = 10 V VCE = 5.0 V 1.0 Figure 44. DC Current Gain - PNP 10 IC, COLLECTOR CURRENT (mA) Figure 45. DC Current Gain - NPN http://onsemi.com 1027 100 ON Semiconductor MV104 Silicon Tuning Diode This device is designed for FM tuning, general frequency control and tuning, or any top-of-the-line application requiring back-to-back diode configurations for minimum signal distortion and detuning. * High Figure of Merit Q = 140 (Typ) @ VR = 3.0 Vdc, f = 100 MHz * Guaranteed Capacitance Range 37-42 pF @ VR = 3.0 Vdc (MV104) * Dual Diodes - Save Space and Reduce Cost * Monolithic Chip Provides Near Perfect Matching - Guaranteed 1.0% (Max) Over Specified Tuning Range DUAL VOLTAGE VARIABLE CAPACITANCE DIODE 1 2 MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage VR 32 Vdc Forward Current IF 200 mAdc Total Power Dissipation @ TA = 25C Derate above 25C PD 280 2.8 mW mW/C Junction Temperature TJ +125 C Storage Temperature Range Tstg -55 to +150 C 3 CASE 29-11, STYLE 15 TO-92 (TO-226AA) Pin 1 A1 Pin 3 A2 Pin 2 C ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Typ Max Unit V(BR)R 32 -- -- Vdc Reverse Voltage Leakage Current TA = 25C (VR = 30 Vdc) TA = 60C IR -- -- -- -- 50 500 nAdc Diode Capacitance Temperature Coefficient (VR = 4.0 Vdc, f = 1.0 MHz) TCC -- 280 -- ppm/C Reverse Breakdown Voltage (IR = 10 Adc) CT, Diode Capacitance VR = 3.0 Vdc, f = 1.0 MHz pF Device MV104 Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 2 Q, Figure of Merit VR = 3.0 Vdc f = 100 MHz CR, Capacitance Ratio C3/C30 f = 1.0 MHz Min Max Min Typ Min Max 37 42 100 140 2.5 2.8 1028 Publication Order Number: MV104/D MV104 TYPICAL CHARACTERISTICS (Each Diode) 550 70 Q, FIGURE OF MERIT CT , DIODE CAPACITANCE (pF) 100 40 20 350 250 TA = 25C f = 100 MHz 150 10 0.3 0.5 2.0 1.0 3.0 5.0 7.0 10 20 0 3.0 6.0 9.0 12 15 18 24 21 27 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 1. Diode Capacitance (Each Diode) Figure 2. Figure of Merit versus Voltage CT , DIODE CAPACITANCE (NORMALIZED) 1000 VR = 3.0 Vdc TA = 25C 500 200 100 50 20 30 50 70 100 1.04 VR = 2.0 V 1.03 1.02 4.0 V 1.01 1.00 30 V 0.99 NORMALIZED to CT at TA = 25C 0.98 0.97 0.96 -75 200 300 30 -50 -25 +25 0 +50 +75 +100 +125 f, FREQUENCY (MHz) TJ, JUNCTION TEMPERATURE (C) Figure 3. Figure of Merit versus Frequency Figure 4. Diode Capacitance versus Temperature 100 50 I R , REVERSE CURRENT (nA) 20 10 50 30 2000 Q, FIGURE OF MERIT 450 TA = 125C 20 10 5 TA = 75C 2 1 0.5 0.2 0.1 TA = 25C 0.05 0.02 0.01 0 5.0 15 10 20 25 30 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Reverse Current versus Reverse Voltage http://onsemi.com 1029 NSF2250WT1 Advance Information NPN Silicon Oscillator and Mixer Transistor The NSF2250WT1 NPN silicon epitaxial bipolar transistor is intended for use in general purpose UHF oscillator and mixer applications. It is suitable for automovtive keyless entry and TV tuner designs. The device features stable oscillation and small frequency drift during changes in the supply voltage and over the ambient temperature range. http://onsemi.com COLLECTOR 3 1 BASE Features * High Gain Bandwidth Product: fT = 2000 MHz Minimum * Tightly Controlled hFE Range: hFE = 120 to 250 * Low Feedback Capacitance: CRE = 0.45 pF Typical 2 EMITTER MAXIMUM RATINGS Parameters Symbol Units Ratings Collector to Base Voltage VCBO V 30 Collector to Emitter Voltage VCEO V 15 Emitter to Base Voltage VEBO V 3.0 IC mA 50 Collector Current Electrostatic Discharge ESD Total Device Dissipation TA = 25C Derate above 25C 3 SOT-323/SC-70 CASE 419 STYLE 3 1 2 HBM - Class 1C MM - Class A 3M W THERMAL CHARACTERISTICS Characteristic MARKING DIAGRAM Symbol Max Unit PD 202 (Note 1.) 310 (Note 2.) 1.6 (Note 1.) 2.5 (Note 2.) mW 3M W = Specific Device Code = Date Code ORDERING INFORMATION mW/C Device Thermal Resistance - Junction-to-Ambient RJA 618 (Note 1.) 403 (Note 2.) C/W Thermal Resistance - Junction-to-Lead RJL 280 (Note 1.) 332 (Note 2.) C/W Junction and Storage Temperature Range TJ, Tstg -55 to +150 C NSF2250WT1 Package Shipping SOT-323 3000/Tape & Reel 1. FR-4 @ Minimum Pad 2. FR-4 @ 1.0 x 1.0 inch Pad This document contains information on a new product. Specifications and information herein are subject to change without notice. Semiconductor Components Industries, LLC, 2001 July, 2001 - Rev. 1 1030 Publication Order Number: NSF2250WT1/D NSF2250WT1 ELECTRICAL CHARACTERISTICS (TA = 25C) Characteristic Symbol Min Typ Max Unit Collector Cutoff Current, VCB = 12 V, IE = 0 ICBO - - 0.1 A DC Current Gain, VCE = 10 V, IC = 5.0 mA hFE 120 - 250 - VCE(sat) - - 0.5 V Collector Saturation Voltage, IC = 10 mA, IB = 1.0 mA Gain Bandwidth Product, VCE = 3 V, IE = -5.0 mA fT 2.0 2.3 - GHz COB - 0.7 1.2 pF CCrb'b - 3.5 8.0 ps CRE - 4.5 - pF Output Capacitance, VCB = 3 V, IE = 0 mA, f = 1.0 MHz Collector to Base Time Constant, VCE = 3 V, IE = -5.0 mA, f = 31.9 MHz Feedback Capacitance, VCB = 10 V, IE = 0 mA, f = 1.0 MHz PD, POWER DISSIPATION (mW) 350 300 250 200 150 100 50 0 -50 RJA = 403C/W 0 50 100 TA, AMBIENT TEMPERATURE (C) Figure 1. Derating Curve http://onsemi.com 1031 150 NSF2250WT1 350 300 200 VCE = 12 V hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (mA) 250 150 5V 3V 100 50 TA = 125C 250 200 25C 150 100 -55C 50 VCE = 5 V 0 0.1 1 10 hFE, DC CURRENT GAIN 0 100 0.1 Figure 2. DC Current Gain versus Collector Current CRE, FEEDBACK CAPACITANCE (pF) VCE = 12 V 1000 100 100 Figure 4. Gain Bandwidth Product versus Collector Current 10 f = 1 MHz TA = 25C 1 0.1 1 10 VCB, COLLECTOR BASE VOLTAGE (VOLTS) 1.4 1.2 1 0.8 0.6 0.4 f = 1 MHz TA = 25C 0.2 0 0 100 Figure 5. Device Capacitance versus Collector Base Voltage 1.6 Cob, CAPACITANCE (pF) ft, GAIN BANDWIDTH PRODUCT (MHz) 5V 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 3. DC Current Gain versus Collector Current 10,000 0.1 1 10 IC, COLLECTOR CURRENT 5 10 15 20 25 30 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 6. Output Capacitance http://onsemi.com 1032 35 NSF2250WT1 TYPICAL COMMON EMITTER SCATTERING PARAMETER (TA = 25C) Freq MHz S11 Mag S21 S12 S22 Ang Mag Ang Mag Ang Mag Ang VCE = 2.5 V, IC = 2.5 mA 50 0.926 -14.124 6.803 162.639 0.018 82.792 0.973 -7.062 100 0.855 -26.794 6.224 148.649 0.034 73.296 0.921 -12.818 200 0.667 -47.287 5.033 126.317 0.058 62.292 0.807 -19.210 300 0.513 -60.931 4.072 110.981 0.074 58.641 0.736 -21.979 400 0.411 -70.342 3.326 100.524 0.090 57.333 0.694 -23.695 500 0.342 -77.461 2.831 92.771 0.104 56.067 0.670 -25.311 600 0.297 -84.335 2.445 86.222 0.117 55.166 0.651 -27.095 700 0.261 -90.986 2.154 80.493 0.131 53.800 0.637 -29.095 800 0.236 -97.798 1.935 75.382 0.144 52.087 0.627 -31.026 900 0.218 -104.905 1.755 70.672 0.155 50.745 0.617 -33.167 1000 0.205 -112.449 1.617 66.258 0.168 49.386 0.608 -35.352 1500 0.190 -147.224 1.200 48.079 0.219 42.418 0.575 -46.016 2000 0.215 -171.677 1.011 33.299 0.258 35.910 0.544 -58.267 2500 0.230 -172.291 0.889 20.271 0.294 31.024 0.510 -68.713 3000 0.236 -155.125 0.866 10.984 0.340 28.868 0.450 -81.517 TYPICAL COMMON EMITTER SCATTERING PARAMETER (TA = 25C) S11 Freq MHz Mag S21 S12 S22 Ang Mag Ang Mag Ang Mag Ang VCE = 3 V, IC = 5 mA 50 0.858 -20.126 12.065 156.269 0.017 78.802 0.945 -10.278 100 0.733 -36.552 10.452 139.116 0.029 69.100 0.850 -16.656 200 0.493 -58.358 7.472 115.678 0.047 62.893 0.712 -20.497 300 0.362 -69.976 5.544 103.053 0.062 62.188 0.653 -21.545 400 0.288 -78.272 4.337 94.866 0.075 61.876 0.621 -22.551 500 0.242 -85.666 3.582 88.592 0.090 61.259 0.603 -23.975 600 0.212 -93.237 3.048 83.504 0.103 59.861 0.590 -25.526 700 0.190 -101.308 2.656 78.785 0.116 58.802 0.580 -27.405 800 0.177 -109.656 2.375 74.561 0.128 57.017 0.573 -29.334 900 0.167 -118.336 2.145 70.348 0.141 55.629 0.563 -31.402 1000 0.163 -127.188 1.968 66.700 0.153 53.851 0.555 -33.301 1500 0.176 -164.287 1.435 50.083 0.203 47.574 0.528 -43.164 2000 0.210 -174.155 1.187 35.998 0.246 41.767 0.501 -54.213 2500 0.226 -159.754 1.034 23.227 0.288 36.614 0.469 -63.689 3000 0.239 -144.224 0.995 14.088 0.340 34.458 0.413 -74.387 http://onsemi.com 1033 NSF2250WT1 TYPICAL COMMON EMITTER SCATTERING PARAMETER (TA = 25C) Freq MHz S11 Mag S21 S12 S22 Ang Mag Ang Mag Ang Mag Ang VCE = 3 V, IC = 10 mA 50 0.643 -35.313 15.384 140.063 0.015 69.823 0.864 -14.048 100 0.459 -53.013 11.650 121.580 0.024 63.636 0.738 -17.013 200 0.289 -70.035 7.214 104.714 0.040 65.531 0.647 -17.265 300 0.225 -80.644 5.260 96.934 0.053 66.205 0.618 -18.444 400 0.192 -91.607 4.122 91.266 0.068 66.344 0.598 -20.216 500 0.172 -102.488 3.419 86.447 0.082 64.574 0.584 -22.273 600 0.161 -113.748 2.929 82.212 0.096 63.206 0.572 -24.418 700 0.156 -125.151 2.575 78.231 0.107 61.822 0.561 -26.828 800 0.155 -135.549 2.313 74.282 0.119 60.606 0.553 -28.821 900 0.156 -145.469 2.099 70.461 0.131 59.154 0.543 -31.132 1000 0.163 -153.718 1.925 67.004 0.141 57.409 0.536 -33.247 1500 0.201 -175.526 1.415 50.535 0.193 52.024 0.505 -43.365 2000 0.237 -159.398 1.173 36.726 0.240 46.396 0.477 -54.652 2500 0.247 -147.097 1.021 24.113 0.289 41.529 0.444 -64.094 3000 0.259 -133.925 0.982 15.023 0.346 38.491 0.382 -75.243 TYPICAL COMMON EMITTER SCATTERING PARAMETER (TA = 25C) S11 Freq MHz Mag S21 S12 S22 Ang Mag Ang Mag Ang Mag Ang VCE = 10 V, IC = 5 mA 50 0.877 -17.278 11.972 157.707 0.012 81.580 0.972 -7.268 100 0.765 -31.274 10.386 140.944 0.022 72.099 0.900 -12.126 200 0.539 -49.213 7.575 118.277 0.037 66.849 0.803 -14.944 300 0.406 -57.758 5.678 105.478 0.049 66.104 0.757 -16.182 400 0.334 -63.347 4.464 97.467 0.062 65.473 0.729 -17.508 500 0.286 -68.461 3.698 91.347 0.073 64.460 0.717 -19.007 600 0.252 -73.828 3.159 86.264 0.085 63.014 0.706 -20.874 700 0.227 -79.612 2.766 81.745 0.095 62.100 0.697 -22.551 800 0.208 -86.135 2.474 77.803 0.106 60.785 0.690 -24.442 900 0.190 -93.121 2.237 73.571 0.116 59.532 0.682 -26.405 1000 0.179 -100.507 2.047 70.150 0.125 57.905 0.674 -28.385 1500 0.162 -139.494 1.495 53.949 0.169 52.604 0.652 -37.411 2000 0.185 -167.453 1.242 40.156 0.207 47.697 0.631 -47.834 2500 0.200 -175.534 1.082 27.306 0.247 44.045 0.609 -55.962 3000 0.208 -159.130 1.050 18.234 0.296 42.716 0.557 -65.696 http://onsemi.com 1034 NSF2250WT1 VCE = 2.5 V, IC = 2.5 mA S11 S12 j50 j25 90 60 120 j100 30 150 j10 3 GHz 3 GHz 10 0 25 50 100 0 180 0.05 GHz 0.2 0.3 0.4 0.5 0 0.05 GHz -j10 -150 -30 -j100 -j25 -60 -120 -90 -j50 Figure 7. Input Reflection Coefficient S22 Figure 8. Reverse Transmission Coefficient S21 j50 j25 90 60 120 j100 30 150 j10 0.05 GHz 0 10 25 50 100 0 180 3 GHz 0.05 GHz 2 4 6 8 10 0 3 GHz -j10 -150 -30 -j100 -j25 -60 -120 -90 -j50 Figure 9. Output Reflection Coefficient Figure 10. Forward Transmission Coefficient http://onsemi.com 1035 NSF2250WT1 VCE = 3.0 V, IC = 10 mA S11 S12 j50 j25 90 60 120 j100 150 30 3 GHz j10 3 GHz 10 0 25 50 100 0 180 0.05 GHz 0.2 0.3 0.4 0.5 0 0.05 GHz -j10 -150 -30 -j100 -j25 -60 -120 -90 -j50 Figure 11. Input Reflection Coefficient S22 Figure 12. Reverse Transmission Coefficient S21 j50 j25 90 60 120 j100 150 0.05 GHz 30 j10 0 10 25 50 100 0 180 3 GHz 0.05 GHz 4 8 12 16 20 0 3 GHz -j10 -150 -30 -j100 -j25 -60 -120 -90 -j50 Figure 13. Output Reflection Coefficient Figure 14. Forward Transmission Coefficient http://onsemi.com 1036 NSF2250WT1 TYPICAL COMMON BASE SCATTERING PARAMETER (TA = 25C) Freq MHz S11 Mag S21 S12 S22 Ang Mag Ang Mag Ang Mag Ang VCE = 2.5 V, IC = 2.5 mA 50 0.627 176.455 1.6218 -3.3808 0.003 81.692 1.006 -1.7455 100 0.626 172.821 1.6153 -6.8404 0.008 87.954 1.002 -3.5734 200 0.622 165.583 1.6042 -13.205 0.014 92.620 1.005 -6.7806 400 0.608 151.867 1.5630 -26.289 0.031 96.834 1.006 -13.779 600 0.589 138.455 1.5099 -39.579 0.052 96.285 1.016 -21.141 800 0.566 126.103 1.4461 -52.382 0.076 94.675 1.022 -28.553 1000 0.541 114.811 1.3613 -65.315 0.102 90.577 1.026 -36.519 1500 0.476 89.445 1.1404 -98.892 0.170 78.774 1.014 -57.448 2000 0.397 68.206 0.8928 -133.58 0.233 68.003 0.922 -77.708 TYPICAL COMMON BASE SCATTERING PARAMETER (TA = 25C) Freq MHz S11 Mag S21 S12 S22 Ang Mag Ang Mag Ang Mag Ang VCE = 3 V, IC = 5 mA 50 0.781 176.95 1.7732 -3.0425 0.004 85.472 1.006 -1.6658 100 0.780 174.093 1.7625 -5.9870 0.006 88.871 1.002 -3.5604 200 0.776 168.012 1.7622 -11.733 0.013 94.408 1.004 -6.7723 400 0.759 156.688 1.7285 -23.541 0.029 100.70 1.006 -13.627 600 0.743 145.893 1.6911 -35.161 0.047 100.93 1.015 -20.799 800 0.725 135.660 1.6441 -46.886 0.071 98.938 1.024 -28.057 1000 0.709 126.241 1.5817 -58.697 0.095 95.803 1.031 -35.921 1500 0.674 103.465 1.4275 -90.316 0.172 85.633 1.037 -56.915 2000 0.620 81.3686 1.1968 -123.89 0.249 73.589 0.957 -77.953 TYPICAL COMMON BASE SCATTERING PARAMETER (TA = 25C) S11 Freq MHz Mag S21 S12 S22 Ang Mag Ang Mag Ang Mag Ang VCE = 3 V, IC = 10 mA 50 0.867 176.898 1.8601 -3.2938 0.004 88.195 1.006 -1.7132 100 0.863 173.941 1.8432 -6.3479 0.007 90.044 1.001 -3.6916 200 0.851 167.942 1.8370 -12.359 0.014 91.598 1.003 -6.9503 400 0.821 157.527 1.7814 -23.95 0.029 96.128 1.003 -13.909 600 0.795 148.933 1.7303 -34.993 0.045 97.955 1.011 -21.082 800 0.782 139.487 1.6831 -46.443 0.067 98.521 1.018 -28.456 1000 0.773 131.501 1.6327 -57.916 0.091 96.532 1.024 -36.296 1500 0.765 110.253 1.4975 -89.11 0.169 88.005 1.031 -57.462 2000 0.730 87.937 1.2711 -123.21 0.253 76.070 0.950 -78.777 http://onsemi.com 1037 NSF2250WT1 VCE = 2.5 V, IC = 2.5 mA S11 S12 j50 j25 90 2 GHz 60 120 j100 30 150 j10 2 GHz 10 25 0.05 GHz 0 50 100 0 180 0.05 GHz 0.1 0.15 0.2 0.25 0 -j10 -150 -30 -j100 -j25 -60 -120 -90 -j50 Figure 15. Input Reflection Coefficient S22 Figure 16. Reverse Transmission Coefficient S21 j50 j25 90 60 120 j100 30 150 j10 0 10 25 50 100 0 0.05 180 0.1 0.15 0.05 GHz 0.2 0.25 0 0.05 GHz 2 GHz -j10 -150 -j25 2 GHz -30 -j100 -60 -120 -90 -j50 Figure 17. Output Reflection Coefficient Figure 18. Forward Transmission Coefficient http://onsemi.com 1038 NSL12TT1 Advance Information High Current Surface Mount PNP Silicon Low VCE(sat) Transistor for Battery Operated Applications http://onsemi.com 12 VOLTS 1.0 AMPS PNP TRANSISTOR MAXIMUM RATINGS (TA = 25C) Symbol Max Unit Collector-Emitter Voltage VCEO -12 Vdc Collector-Base Voltage VCBO -20 Vdc Emitter-Base Voltage VEBO -4.0 Vdc IC -1.0 -0.5 Adc Rating Collector Current - Peak Collector Current - Continuous Electrostatic Discharge ESD COLLECTOR 3 1 BASE 2 EMITTER HBM Class 3B MM Class C THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation TA = 25C Derate above 25C Symbol Max Unit PD (Note 1) 210 mW 1.7 mW/C RJA (Note 1) 595 C/W PD (Note 2) 365 mW 2.9 mW/C 3 2 Thermal Resistance, Junction to Ambient RJA (Note 2) 340 C/W Thermal Resistance, Junction to Lead #3 RJL 205 C/W Junction and Storage Temperature Range TJ, Tstg -55 to +150 C 1 CASE 463 SOT-416/SC-75 STYLE 1 DEVICE MARKING L2 L2 = Specific Device Code 1. FR-4 @ Minimum Pad 2. FR-4 @ 1.0 X 1.0 inch Pad This document contains information on a new product. Specifications and information herein are subject to change without notice. ORDERING INFORMATION Device NSL12TT1 Semiconductor Components Industries, LLC, 2001 May, 2001 - Rev. 1 1039 Package Shipping SOT-416 3000/Tape & Reel Publication Order Number: NSL12TT1/D NSL12TT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typical Max -12 -18 - -20 -28 - -4.0 -7.0 - - -0.03 -0.1 - -0.03 -0.1 - -0.01 -0.1 150 150 100 200 200 150 - - - - - - - - - - -0.070 -0.110 -0.190 -0.165 -0.300 -0.210 -0.410 -0.110 -0.150 -0.240 - -0.370 - - - -0.81 -0.90 - -0.81 -0.875 - 52 - - 30 - - 50 - - 80 - Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = -10 mAdc, IB = 0) V(BR)CEO Collector-Base Breakdown Voltage (IC = -0.1 mAdc, IE = 0) V(BR)CBO Emitter-Base Breakdown Voltage (IE = -0.1 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = -12 Vdc, IE = 0) ICBO Collector-Emitter Cutoff Current (VCES = -9 Vdc) ICES Emitter Cutoff Current (VEB = -4.0 Vdc) IEBO Vdc Vdc Vdc Adc Adc Adc ON CHARACTERISTICS DC Current Gain (Note 3.) (IC = -100 mA, VCE = -1.0 V) (IC = -100 mA, VCE = -2.0 V) (IC = -500 mA, VCE = -2.0 V) hFE Collector-Emitter Saturation Voltage (Note 3.) (IC = -50 mA, IB = -0.5 mA) (IC = -100 mA, IB = -1.0 mA) (IC = -250 mA, IB = -2.5 mA) (IC = -250 mA, IB = -5.0 mA) (IC = -500 mA, IB = -5.0 mA) (IC = -500 mA, IB = -50 mA) (IC = -1.0 A, IB = -100 mA) VCE(sat) Base-Emitter Saturation Voltage (Note 3.) (IC = -150 mA, IB = -20 mA) VBE(sat) Base-Emitter Turn-on Voltage (Note 3.) (IC = -150 mA, VCE = -3.0 V) VBE(on) Input Capacitance (VEB = 0 V, f = 1.0 MHz) Cibo Output Capacitance (VCB = 0 V, f = 1.0 MHz) Cobo Turn-On Time (IBI = -50 mA, IC = -500 mA, RL = 3.0 ) ton Turn-Off Time (IB1 = IB2 = -50 mA, IC = -500 mA, RL = 3.0 ) toff 3. Pulsed Condition: Pulse Width = 300 sec, Duty Cycle 2% Figure 19. http://onsemi.com 1040 V V V pF pF ns ns NSL12TT1 0.1 1 VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) 1 IC/IB = 200 100 50 0.01 10 TA = 25C 0.001 0.001 0.01 0.1 -55C 0.1 TA = 125C Figure 1. Collector Emitter Saturation Voltage vs. Collector Current Figure 2. Collector Emitter Saturation Voltage vs. Collector Current 1 VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) 125C 400 300 25C 200 TA = -55C 100 0.01 0.001 0.1 IC/IB = 50 25C 0.1 -55C TA = 125C 0.01 0.001 1 IC, COLLECTOR CURRENT (AMPS) 0.1 1 Figure 4. Collector Emitter Saturation Voltage vs. Collector Current 1 1.2 VBE(sat), BASE EMITTER SATURATION VOLTAGE (V) TA = 25C 0.9 VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) 0.01 IC, COLLECTOR CURRENT (AMPS) Figure 3. DC Current Gain 0.8 IC = 1.0 A 0.7 0.6 0.5 0.4 500 mA 50 mA 250 mA 0.2 0.1 1 IC, COLLECTOR CURRENT (AMPS) 500 0.3 0.1 0.01 IC, COLLECTOR CURRENT (AMPS) VCE = 1.0 V hFE, DC CURRENT GAIN 25C 0.01 0.001 1 600 0 IC/IB = 100 10 mA 5.0 mA 0 0.00001 0.0001 1 -55C 0.8 25C TA = 125C 0.6 0.4 0.2 100 mA 0.001 0.01 0.1 1 0 0.001 IB, BASE CURRENT (AMPS) 0.01 0.1 IC, COLLECTOR CURRENT (AMPS) Figure 5. Collector Emitter Saturation Voltage vs Base Current Figure 6. Base Emitter Saturation Voltage vs. Collector Current http://onsemi.com 1041 1 NSL12TT1 55 VCE = 3.0 V 1 Cibo, INPUT CAPACITANCE VBE(on), BASE EMITTER TURN-ON VOLTAGE (V) 1.2 -55C 0.8 25C 0.6 TA = 125C 0.4 0.2 0 0.001 0.01 0.1 1 f = 1 MHz IC = 0 A TA = 25C 50 45 40 35 30 25 20 0 1 2 3 4 IC, COLLECTOR CURRENT (AMPS) VEB, EMITTER BASE VOLTAGE Figure 7. Base Emitter Turn-On Voltage vs. Collector Current Figure 8. Input Capacitance 5 6 Cobo, OUTPUT CAPACITANCE 35 f = 1 MHz IE = 0 A TA = 25C 30 25 20 15 10 0 2 4 6 8 10 12 14 VCB, COLLECTOR BASE VOLTAGE r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 9. Output Capacitance 1 D = 0.50 D = 0.20 P(pk) D = 0.10 0.1 D = 0.05 t1 t2 DUTY CYCLE, D = t1/t2 D = 0.01 Copper Area = 0.048 square inches RJA = 505.7 C/W SINGLE PULSE 0.01 0.0001 0.001 0.01 0.1 t1, TIME (s) 1 Figure 10. Normalized Thermal Response http://onsemi.com 1042 10 100 1000 NSL35TT1 Advance Information High Current Surface Mount PNP Silicon Low VCE(sat) Transistor for Battery Operated Applications http://onsemi.com 35 VOLTS 1.0 AMPS PNP TRANSISTOR MAXIMUM RATINGS (TA = 25C) Symbol Max Unit Collector-Emitter Voltage VCEO -35 Vdc Collector-Base Voltage VCBO -50 Vdc Emitter-Base Voltage VEBO -5.0 Vdc IC -1.0 -500 Adc mAdc Rating Collector Current - Peak Collector Current - Continuous Electrostatic Discharge ESD COLLECTOR 3 1 BASE 2 EMITTER HBM Class 3B MM Class C THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation TA = 25C Derate above 25C Symbol Max Unit PD (Note 1) 210 mW 1.7 mW/C RJA (Note 1) 595 C/W PD (Note 2) 365 mW 2.9 mW/C 3 2 Thermal Resistance, Junction to Ambient RJA (Note 2) 340 C/W Thermal Resistance, Junction to Lead #3 RJL 205 C/W Junction and Storage Temperature Range TJ, Tstg -55 to +150 C 1 CASE 463 SOT-416/SC-75 STYLE 1 DEVICE MARKING L1 1. FR-4 @ Minimum Pad 2. FR-4 @ 1.0 X 1.0 inch Pad L1 = Specific Device Code This document contains information on a new product. Specifications and information herein are subject to change without notice. Figure 11. ORDERING INFORMATION Device NSL35TT1 Semiconductor Components Industries, LLC, 2001 May, 2001 - Rev. 1 1043 Package Shipping SOT-416 3000/Tape & Reel Publication Order Number: NSL35TT1/D NSL35TT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typical Max -35 -45 - -50 -65 - -5.0 -7.0 - - -0.03 -0.1 - -0.03 -0.1 - -0.01 -0.1 100 100 100 180 180 150 - - - - - - - - -0.090 -0.200 -0.320 -0.170 -0.270 -0.130 -0.350 -0.450 - -0.350 - -0.81 -0.9 - -0.81 -0.875 - 45 - - 18 - - 40 - - 70 - Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = -10 mAdc, IB = 0) V(BR)CEO Collector-Base Breakdown Voltage (IC = -0.1 mAdc, IE = 0) V(BR)CBO Emitter-Base Breakdown Voltage (IE = -0.1 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = -35 Vdc, IE = 0) ICBO Collector-Emitter Cutoff Current (VCES = -30 Vdc) ICES Emitter Cutoff Current (VEB = -4.0 Vdc) IEBO Vdc Vdc Vdc Adc Adc Adc ON CHARACTERISTICS DC Current Gain (Note 4.) (IC = -100 mA, VCE = -1.0 V) (IC = -100 mA, VCE = -2.0 V) (IC = -250 mA, VCE = -2.0 V) hFE Collector-Emitter Saturation Voltage (Note 4.) (IC = -50 mA, IB = -0.5 mA) (IC = -100 mA, IB = -1.0 mA) (IC = -250 mA, IB = -2.5 mA) (IC = -250 mA, IB = -5.0 mA) (IC = -500 mA, IB = -50 mA) VCE(sat) Base-Emitter Saturation Voltage (Note 4.) (IC = -150 mA, IB = -20 mA) VBE(sat) Base-Emitter Turn-on Voltage (Note 4.) (IC = -150 mA, VCE = -3.0 V) VBE(on) Input Capacitance (VEB = 0 V, f = 1.0 MHz) Cibo Output Capacitance (VCB = 0 V, f = 1.0 MHz) Cobo Turn-On Time (IBI = -50 mA, IC = -500 mA, RL = 3.0 ) ton Turn-Off Time (IB1 = IB2 = -50 mA, IC = -500 mA, RL = 3.0 ) toff 4. Pulsed Condition: Pulse Width = 300 sec, Duty Cycle 2% http://onsemi.com 1044 V V V pF pF ns ns NSL35TT1 1 VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) 1 100 0.1 IC/IB = 200 10 50 0.01 TA = 25C 0.001 0.001 0.01 0.1 0.01 1 0.1 IC, COLLECTOR CURRENT (AMPS) Figure 1. Collector Emitter Saturation Voltage vs. Collector Current Figure 2. Collector Emitter Saturation Voltage vs. Collector Current 1 VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) 125C 400 300 25C 200 TA = -55C 100 VCE = 5 V 0 0.001 0.01 0.1 125C 0.01 0.1 Figure 4. Collector Emitter Saturation Voltage vs. Collector Current IC = 1.0 A 0.7 0.6 50 mA 0.4 500 mA 5.0 mA 0.2 100 mA 250 mA 10 mA 0.0001 0.001 0.01 0.1 1 1.2 0.8 0 0.00001 25C Figure 3. DC Current Gain 0.9 0.1 0.1 IC, COLLECTOR CURRENT (AMPS) TA = 25C 0.3 TA = -55C IC, COLLECTOR CURRENT (AMPS) 1 0.5 IC/IB = 50 0.01 0.001 1 VBE(on), BASE EMITTER TURN-ON VOLTAGE (V) hFE, DC CURRENT GAIN 125C IC, COLLECTOR CURRENT (AMPS) 500 VCE(sat), COLLECTOR EMITTER VOLTAGE (V) 25C TA = -55C 0.01 0.001 1 0.1 IC/IB = 100 1 1 -55C 0.8 25C 0.6 TA = 125C 0.4 0.2 0 0.001 IB, BASE CURRENT (AMPS) 0.01 0.1 IC, COLLECTOR CURRENT (AMPS) Figure 5. Collector Emitter Saturation Voltage vs. Base Current Figure 6. Base Emitter Saturation Voltage vs. Collector Current http://onsemi.com 1045 1 NSL35TT1 50 VCE = 3.0 V Cibo, INPUT CAPACITANCE (pF) VBE(on), BASE EMITTER TURN-ON VOLTAGE (V) 1.2 1 -55C 0.8 25C 0.6 TA = 125C 0.4 0.2 f = 1 MHz IC = 0 A TA = 25C 45 40 35 30 25 20 15 10 5 0 0 0.001 0.01 1 0.1 0 1 2 3 4 IC, COLLECTOR CURRENT (AMPS) VEB, EMITTER BASE VOLTAGE (V) Figure 7. Base Emitter Turn-On Voltage vs. Collector Current Figure 8. Input Capacitance Cobo, OUTPUT CAPACITANCE (pF) 20 5 6 f = 1 MHz IE = 0 A TA = 25C 18 16 14 12 10 8 6 4 2 0 0 5 10 15 20 25 30 35 40 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) VCB, COLLECTOR BASE VOLTAGE (V) Figure 9. Output Capacitance 1 D = 0.50 D = 0.20 P(pk) D = 0.10 0.1 D = 0.05 t1 t2 DUTY CYCLE, D = t1/t2 D = 0.01 Copper Area = 0.048 square inches RJA = 505.7 C/W SINGLE PULSE 0.01 0.0001 0.001 0.01 0.1 t1, TIME (s) 1 Figure 10. Normalized Thermal Response http://onsemi.com 1046 10 100 1000 NSL5TT1 Advance Information High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications http://onsemi.com 5 VOLTS 1.0 AMPS PNP TRANSISTOR MAXIMUM RATINGS (TA = 25C) Symbol Max Unit Collector-Emitter Voltage VCEO -5.0 Vdc Collector-Base Voltage VCBO -10 Vdc Emitter-Base Voltage VEBO -4.0 Vdc IC -1.0 -0.5 Adc Rating Collector Current - Peak Collector Current - Continuous Electrostatic Discharge ESD COLLECTOR 3 1 BASE 2 EMITTER HBM Class 3 MM Class C THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation TA = 25C Derate above 25C Symbol Max Unit PD (Note 1.) 210 mW 1.7 mW/C RJA (Note 1.) 595 C/W PD (Note 2.) 365 mW 2.9 mW/C 3 2 Thermal Resistance, Junction to Ambient RJA (Note 2.) 340 C/W Thermal Resistance, Junction to Lead #3 RJL 205 C/W Junction and Storage Temperature Range TJ, Tstg -55 to +150 C 1 CASE 463 SOT-416/SC-75 STYLE 1 DEVICE MARKING L3 1. FR-4 @ Minimum Pad 2. FR-4 @ 1.0 X 1.0 inch Pad This document contains information on a new product. Specifications and information herein are subject to change without notice. ORDERING INFORMATION Device NSL5TT1 Semiconductor Components Industries, LLC, 2001 April, 2001 - Rev. 0 1047 Package Shipping SOT-416 3000/Tape & Reel Publication Order Number: NSL5TT1/D NSL5TT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typical Max -5.0 -9.0 - -10 -15 - -4.0 -7.0 - - -0.03 -0.1 - -0.03 -0.1 - -0.01 -0.1 100 100 100 250 250 200 - - - - - - - - - - -0.050 -0.080 -0.130 -0.110 -0.240 -0.180 -0.340 - - - - - - - - -0.81 -0.9 - -0.81 -0.875 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = -10 mAdc, IB = 0) V(BR)CEO Collector-Base Breakdown Voltage (IC = -0.01 mAdc, IE = 0) V(BR)CBO Emitter-Base Breakdown Voltage (IE = -0.01 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = -5.0 Vdc, IE = 0) ICBO Collector-Emitter Cutoff Current (VCES = -5.0 Vdc) ICES Emitter Cutoff Current (VEB = -4.0 Vdc) IEBO Vdc Vdc Vdc Adc Adc Adc ON CHARACTERISTICS DC Current Gain (Note 3.) (IC = -10 mA, VCE = -1.0 V) (IC = -150 mA, VCE = -2.0 V) (IC = -500 mA, VCE = -2.0 V) hFE Collector-Emitter Saturation Voltage (Note 3.) (IC = -50 mA, IB = -0.5 mA) (IC = -100 mA, IB = -1.0 mA) (IC = -250 mA, IB = -2.5 mA) (IC = -250 mA, IB = -5.0 mA) (IC = -500 mA, IB = -5.0 mA) (IC = -500 mA, IB = -50 mA) (IC = -1.0 A, IB = -100 mA) VCE(sat) Base-Emitter Saturation Voltage (Note 3.) (IC = -150 mA, IB = -20 mA) VBE(sat) Base-Emitter Turn-on Voltage (Note 3.) (IC = -150 mA, VCE = -3.0 V) VBE(on) 3. Pulsed Condition: Pulse Width = 300 sec, Duty Cycle 2% http://onsemi.com 1048 V V V ON Semiconductor Amplifier Transistors P2N2222A NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 75 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current -- Continuous IC 600 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watts mW/C TJ, Tstg -55 to +150 C Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W Operating and Storage Junction Temperature Range 1 2 3 CASE 29-11, STYLE 17 TO-92 (TO-226AA) THERMAL CHARACTERISTICS Characteristic COLLECTOR 1 2 BASE 3 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO 40 -- Vdc Collector-Base Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO 75 -- Vdc Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO 6.0 -- Vdc Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) ICEX -- 10 nAdc Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0, TA = 150C) ICBO -- -- 0.01 10 Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) IEBO -- 10 nAdc Collector Cutoff Current (VCE = 10 V) ICEO -- 10 nAdc Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) IBEX -- 20 nAdc Characteristic OFF CHARACTERISTICS Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 1049 Adc Publication Order Number: P2N2222A/D P2N2222A ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Min Max 35 50 75 35 100 50 40 -- -- -- -- 300 -- -- -- -- 0.3 1.0 0.6 -- 1.2 2.0 fT 300 -- MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo -- 8.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo -- 25 pF 2.0 0.25 8.0 1.25 -- -- 8.0 4.0 50 75 300 375 5.0 25 35 200 Characteristic Unit ON CHARACTERISTICS DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc, TA = -55C) (IC = 150 mAdc, VCE = 10 Vdc)(1) (IC = 150 mAdc, VCE = 1.0 Vdc)(1) (IC = 500 mAdc, VCE = 10 Vdc)(1) hFE Collector-Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VCE(sat) Base-Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VBE(sat) -- Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product(2) (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hie Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hre Small-Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hoe Collector Base Time Constant (IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz) rbCc -- 150 ps NF -- 4.0 dB (VCC = 30 Vdc, VBE(off) = -2.0 2.0 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) (Figure 1) td -- 10 ns tr -- 25 ns (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) Ad ) (Figure (Fi 2) ts -- 225 ns tf -- 60 ns Noise Figure (IC = 100 Adc, VCE = 10 Vdc, RS = 1.0 k, f = 1.0 kHz) k X 10-4 -- mhos SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 2. fT is defined as the frequency at which |hfe| extrapolates to unity. http://onsemi.com 1050 P2N2222A SWITCHING TIME EQUIVALENT TEST CIRCUITS +30 V +30 V 1.0 to 100 s, DUTY CYCLE 2.0% +16 V 0 -2 V 200 0 1 k < 2 ns 1.0 to 100 s, DUTY CYCLE 2.0% +16 V CS* < 10 pF -14 V < 20 ns 1k -4 V Figure 2. Turn-Off Time 1000 700 500 hFE , DC CURRENT GAIN CS* < 10 pF 1N914 Scope rise time < 4 ns *Total shunt capacitance of test jig, connectors, and oscilloscope. Figure 1. Turn-On Time 200 TJ = 125C 300 200 25C 100 70 50 -55C 30 VCE = 1.0 V VCE = 10 V 20 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 200 300 500 700 1.0 k VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. DC Current Gain 1.0 TJ = 25C 0.8 0.6 IC = 1.0 mA 10 mA 150 mA 500 mA 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 IB, BASE CURRENT (mA) 2.0 Figure 4. Collector Saturation Region http://onsemi.com 1051 3.0 5.0 10 20 30 50 P2N2222A 200 100 70 50 tr @ VCC = 30 V td @ VEB(off) = 2.0 V td @ VEB(off) = 0 30 20 10 7.0 5.0 200 ts = ts - 1/8 tf 100 70 50 tf 30 20 10 7.0 5.0 3.0 2.0 5.0 7.0 10 200 300 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 500 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) Figure 5. Turn-On Time 6.0 f = 1.0 kHz 8.0 4.0 2.0 IC = 50 A 100 A 500 A 1.0 mA 6.0 4.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) Figure 7. Frequency Effects Figure 8. Source Resistance Effects Ceb 10 7.0 5.0 Ccb 3.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE VOLTAGE (VOLTS) 20 30 50 f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) f, FREQUENCY (kHz) 20 0.2 0.3 0 50 50 100 20 30 CAPACITANCE (pF) 500 10 RS = OPTIMUM RS = SOURCE RS = RESISTANCE IC = 1.0 mA, RS = 150 500 A, RS = 200 100 A, RS = 2.0 k 50 A, RS = 4.0 k 8.0 300 Figure 6. Turn-Off Time NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 10 2.0 0.1 VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25C 300 t, TIME (ns) t, TIME (ns) 500 IC/IB = 10 TJ = 25C 500 VCE = 20 V TJ = 25C 300 200 100 70 50 1.0 Figure 9. Capacitances 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 10. Current-Gain Bandwidth Product http://onsemi.com 1052 P2N2222A 1.0 +0.5 TJ = 25C 0 VBE(sat) @ IC/IB = 10 0.6 COEFFICIENT (mV/ C) V, VOLTAGE (VOLTS) 0.8 1.0 V VBE(on) @ VCE = 10 V 0.4 0.2 0 RVC for VCE(sat) -0.5 -1.0 -1.5 RVB for VBE -2.0 VCE(sat) @ IC/IB = 10 0.1 0.2 50 100 200 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 500 1.0 k -2.5 0.1 0.2 Figure 11. "On" Voltages 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) Figure 12. Temperature Coefficients http://onsemi.com 1053 500 ON Semiconductor Amplifier Transistor P2N2907A PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO -60 Vdc Collector-Base Voltage VCBO -60 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current -- Continuous IC -600 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watts mW/C TJ, Tstg -55 to +150 C Operating and Storage Junction Temperature Range 1 2 CASE 29-11, STYLE 17 TO-92 (TO-226AA) COLLECTOR 1 THERMAL CHARACTERISTICS Characteristic 3 Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W 2 BASE 3 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage(1) (IC = -10 mAdc, IB = 0) V(BR)CEO -60 -- Vdc Collector-Base Breakdown Voltage (IC = -10 Adc, IE = 0) V(BR)CBO -60 -- Vdc Emitter-Base Breakdown Voltage (IE = -10 Adc, IC = 0) V(BR)EBO -5.0 -- Vdc Collector Cutoff Current (VCE = -30 Vdc, VEB(off) = -0.5 Vdc) ICEX -- -50 nAdc Collector Cutoff Current (VCB = -50 Vdc, IE = 0) (VCB = -50 Vdc, IE = 0, TA = 150C) ICBO -- -- -0.01 -10 Emitter Cutoff Current (VEB = -3.0 Vdc) IEBO -- -10 nAdc Collector Cutoff Current (VCE = -10 V) ICEO -- -10 nAdc Base Cutoff Current (VCE = -30 Vdc, VEB(off) = -0.5 Vdc) IBEX -- -50 nAdc OFF CHARACTERISTICS Adc 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. Semiconductor Components Industries, LLC, 2001 October, 2001 - Rev. 2 1054 Publication Order Number: P2N2907A/D P2N2907A ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Min Max 75 100 100 100 50 -- -- -- 300 -- -- -- -0.4 -1.6 -- -- -1.3 -2.6 fT 200 -- MHz Output Capacitance (VCB = -10 Vdc, IE = 0, f = 1.0 MHz) Cobo -- 8.0 pF Input Capacitance (VEB = -2.0 Vdc, IC = 0, f = 1.0 MHz) Cibo -- 30 pF ton -- 50 ns td -- 10 ns tr -- 40 ns toff -- 110 ns ts -- 80 ns tf -- 30 ns Characteristic Unit ON CHARACTERISTICS DC Current Gain (IC = -0.1 mAdc, VCE = -10 Vdc) (IC = -1.0 mAdc, VCE = -10 Vdc) (IC = -10 mAdc, VCE = -10 Vdc) (IC = -150 mAdc, VCE = -10 Vdc)(1) (IC = -500 mAdc, VCE = -10 Vdc)(1) hFE -- Collector-Emitter Saturation Voltage(1) (IC = -150 mAdc, IB = -15 mAdc) (IC = -500 mAdc, IB = -50 mAdc) VCE(sat) Base-Emitter Saturation Voltage(1) (IC = -150 mAdc, IB = -15 mAdc) (IC = -500 mAdc, IB = -50 mAdc) VBE(sat) Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product(1), (2) (IC = -50 mAdc, VCE = -20 Vdc, f = 100 MHz) SWITCHING CHARACTERISTICS Turn-On Time Delay Time (VCC = -30 30 Vdc, Vd IC = -150 150 mAdc, Ad IB1 = -15 mAdc) (Figures 1 and 5) Rise Time Turn-Off Time Storage Time (VCC = -6.0 6 0 Vdc, Vd IC = -150 150 mAdc, Ad IB1 = IB2 = -15 mAdc) (Figure 2) Fall Time 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 2. fT is defined as the frequency at which |hfe| extrapolates to unity. INPUT Zo = 50 PRF = 150 PPS RISE TIME 2.0 ns P.W. < 200 ns -30 V 200 1.0 k 0 50 -16 V INPUT Zo = 50 PRF = 150 PPS RISE TIME 2.0 ns P.W. < 200 ns TO OSCILLOSCOPE RISE TIME 5.0 ns +15 V -6.0 V 1.0 k 1.0 k 0 -30 V 50 37 TO OSCILLOSCOPE RISE TIME 5.0 ns 1N916 200 ns 200 ns Figure 1. Delay and Rise Time Test Circuit Figure 2. Storage and Fall Time Test Circuit http://onsemi.com 1055 P2N2907A TYPICAL CHARACTERISTICS hFE , NORMALIZED CURRENT GAIN 3.0 VCE = -1.0 V VCE = -10 V 2.0 TJ = 125C 25C 1.0 -55C 0.7 0.5 0.3 0.2 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. DC Current Gain -1.0 -0.8 IC = -1.0 mA -10 mA -100 mA -500 mA -0.6 -0.4 -0.2 0 -0.005 -0.01 -0.02 -0.03 -0.05 -0.07 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 IB, BASE CURRENT (mA) -2.0 -3.0 -20 -30 -5.0 -7.0 -10 -50 Figure 4. Collector Saturation Region 500 tr 100 70 50 300 VCC = -30 V IC/IB = 10 TJ = 25C 200 t, TIME (ns) t, TIME (ns) 300 200 30 20 10 td @ VBE(off) = 0 V 7.0 5.0 3.0 -5.0 -7.0 -10 tf 100 70 50 30 ts = ts - 1/8 tf 20 10 7.0 5.0 -5.0 -7.0 -10 2.0 V -20 -30 -50 -70 -100 IC, COLLECTOR CURRENT VCC = -30 V IC/IB = 10 IB1 = IB2 TJ = 25C -200 -300 -500 Figure 5. Turn-On Time -20 -30 -50 -70 -100 -200 -300 -500 IC, COLLECTOR CURRENT (mA) Figure 6. Turn-Off Time http://onsemi.com 1056 P2N2907A TYPICAL SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VCE = 10 Vdc, TA = 25C 10 10 8.0 8.0 NF, NOISE FIGURE (dB) IC = -1.0 mA, Rs = 430 -500 A, Rs = 560 -50 A, Rs = 2.7 k -100 A, Rs = 1.6 k 6.0 4.0 Rs = OPTIMUM SOURCE RESISTANCE 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k f, FREQUENCY (kHz) Rs, SOURCE RESISTANCE (OHMS) Figure 7. Frequency Effects Figure 8. Source Resistance Effects 20 C, CAPACITANCE (pF) IC = -50 A -100 A -500 A -1.0 mA 4.0 0 100 30 Ceb 10 7.0 5.0 Ccb 3.0 2.0 -0.1 6.0 2.0 f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) NF, NOISE FIGURE (dB) f = 1.0 kHz -0.2 -0.3 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 50 k 400 300 200 100 80 VCE = -20 V TJ = 25C 60 40 30 20 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -1000 REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 9. Capacitances Figure 10. Current-Gain -- Bandwidth Product +0.5 -1.0 V, VOLTAGE (VOLTS) -0.6 0 VBE(sat) @ IC/IB = 10 COEFFICIENT (mV/ C) TJ = 25C -0.8 VBE(on) @ VCE = -10 V -0.4 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -0.5 -1.0 -1.5 RVB for VBE -2.0 VCE(sat) @ IC/IB = 10 0 -0.1 -0.2 RVC for VCE(sat) -50 -100 -200 -500 -2.5 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 11. "On" Voltage Figure 12. Temperature Coefficients http://onsemi.com 1057 ON Semiconductor PZT2222AT1 NPN Silicon Planar Epitaxial Transistor ON Semiconductor Preferred Device This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. * PNP Complement is PZT2907AT1 * The SOT-223 package can be soldered using wave or reflow. * SOT-223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die. BASE * Available in 12 mm tape and reel 1 Use PZT2222AT1 to order the 7 inch/1000 unit reel. Use PZT2222AT3 to order the 13 inch/4000 unit reel. SOT-223 PACKAGE NPN SILICON TRANSISTOR SURFACE MOUNT COLLECTOR 2, 4 4 1 2 3 3 EMITTER CASE 318E-04, STYLE 1 TO-261AA MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 75 Vdc Emitter-Base Voltage (Open Collector) VEBO 6.0 Vdc IC 600 mAdc PD 1.5 Watts Storage Temperature Range Tstg - 65 to +150 C Junction Temperature TJ 150 C RJA 83.3 C/W TL 260 10 C Sec Collector Current Total Power Dissipation up to TA = 25C(1) THERMAL CHARACTERISTICS Thermal Resistance from Junction to Ambient Lead Temperature for Soldering, 0.0625 from case Time in Solder Bath DEVICE MARKING P1F ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO 40 -- Vdc Collector-Base Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO 75 -- Vdc Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO 6.0 -- Vdc Base-Emitter Cutoff Current (VCE = 60 Vdc, VBE = - 3.0 Vdc) IBEX -- 20 nAdc Collector-Emitter Cutoff Current (VCE = 60 Vdc, VBE = - 3.0 Vdc) ICEX -- 10 nAdc Emitter-Base Cutoff Current (VEB = 3.0 Vdc, IC = 0) IEBO -- 100 nAdc OFF CHARACTERISTICS 1. Device mounted on an epoxy printed circuit board 1.575 inches x 1.575 inches x 0.059 inches; mounting pad for the collector lead min. 0.93 inches2. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 3 1058 Publication Order Number: PZT2222AT1/D PZT2222AT1 ELECTRICAL CHARACTERISTICS -- continued (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit -- -- 10 10 nAdc Adc 35 50 70 35 100 50 40 -- -- -- -- 300 -- -- -- -- 0.3 1.0 0.6 -- 1.2 2.0 2.0 0.25 8.0 1.25 -- -- 8.0x10-4 4.0x10-4 50 75 300 375 5.0 25 35 200 F -- 4.0 dB Current-Gain -- Bandwidth Product (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) fT 300 -- MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cc -- 8.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Ce -- 25 pF (VCC = 30 Vdc, IC = 150 mAdc, IB(on) mAdc VEB(off) 0 5 Vdc) B( ) = 15 mAdc, EB( ff) = 0.5 Figure 1 td -- 10 ns tr -- 25 (VCC = 30 Vdc, IC = 150 mAdc, IB(on) B( ) = IB(off) B( ff) = 15 mAdc) Figure 2 ts -- 225 tf -- 60 OFF CHARACTERISTICS (continued) Collector-Base Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0, TA = 125C) ICBO ON CHARACTERISTICS DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc, TA = - 55C) (IC = 150 mAdc, VCE = 10 Vdc) (IC = 150 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 10 Vdc) hFE Collector-Emitter Saturation Voltages (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VCE(sat) Base-Emitter Saturation Voltages (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VBE(sat) Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) hie Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) hre Small-Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) hfe Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) hoe Noise Figure (VCE = 10 Vdc, IC = 100 Adc, f = 1.0 kHz) -- Vdc Vdc k -- -- mhos DYNAMIC CHARACTERISTICS SWITCHING TIMES (TA = 25C) Delay Time Rise Time Storage Time Fall Time http://onsemi.com 1059 ns PZT2222AT1 VCC Vi R2 90% 10% 0 tr Vo R1 Vi D.U.T. tp Figure 1. Input Waveform and Test Circuit for Determining Delay Time and Rise Time Vi = - 0.5 V to +9.9 V, VCC = +30 V, R1 = 619 , R2 = 200 . PULSE GENERATOR: PULSE DURATION RISE TIME DUTY FACTOR tp tr = OSCILLOSCOPE: INPUT IMPEDANCE INPUT CAPACITANCE RISE TIME 200 ns 2 ns 0.02 Zi Ci tr > 100 k < 12 pF < 5 ns VCC Vi +16.2 V R2 0 Vi TIME R1 D.U.T. R3 Vo OSCILLOSCOPE D1 -13.8 V tf R4 100 s VBB Figure 2. Input Waveform and Test Circuit for Determining Storage Time and Fall Time http://onsemi.com 1060 ON Semiconductor PZT2907AT1 PNP Silicon Epitaxial Transistor ON Semiconductor Preferred Device This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. * NPN Complement is PZT2222AT1 * The SOT-223 package can be soldered using wave or reflow * SOT-223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering eliminating the possibility of damage to the die. BASE 1 * Available in 12 mm tape and reel Use PZT2907AT1 to order the 7 inch/1000 unit reel. Use PZT2907AT3 to order the 13 inch/4000 unit reel. SOT-223 PACKAGE PNP SILICON TRANSISTOR SURFACE MOUNT COLLECTOR 2,4 4 1 2 3 3 EMITTER CASE 318E-04, STYLE 1 TO-261AA MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter Voltage VCEO -60 Vdc Collector-Base Voltage VCBO -60 Vdc Emitter-Base Voltage VEBO -5.0 Vdc IC -600 mAdc PD 1.5 12 Watts mW/C TJ, Tstg -65 to 150 C RJA 83.3 C/W TL 260 10 C Sec Collector Current Total Power Dissipation @ TA = Derate above 25C 25C(1) Operating and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance -- Junction-to-Ambient (surface mounted) Lead Temperature for Soldering, 0.0625 from case Time in Solder Bath DEVICE MARKING P2F ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Collector-Base Breakdown Voltage (IC = -10 Adc, IE = 0) V(BR)CBO -60 -- -- Vdc Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO -60 -- -- Vdc Emitter-Base Breakdown Voltage (IE = -10 Adc, IC = 0) Characteristic OFF CHARACTERISTICS V(BR)EBO -5.0 -- -- Vdc Collector-Base Cutoff Current (VCB = -50 Vdc, IE = 0) ICBO -- -- -10 nAdc Collector-Emitter Cutoff Current (VCE = -30 Vdc, VBE = 0.5 Vdc) ICEX -- -- -50 nAdc Base-Emitter Cutoff Current (VCE = -30 Vdc, VBE = -0.5 Vdc) IBEX -- -- -50 nAdc 1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 5 1061 Publication Order Number: PZT2907AT1/D PZT2907AT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Characteristic ON Min Typ Max 75 100 100 100 50 -- -- -- -- -- -- -- -- 300 -- -- -- -- -- -0.4 -1.6 -- -- -- -- -1.3 -2.6 Unit CHARACTERISTICS(2) DC Current Gain (IC = -0.1 mAdc, VCE = -10 Vdc) (IC = -1.0 mAdc, VCE = -10 Vdc) (IC = -10 mAdc, VCE = -10 Vdc) (IC = -150 mAdc, VCE = -10 Vdc) (IC = -500 mAdc, VCE = -10 Vdc) hFE Collector-Emitter Saturation Voltages (IC = -150 mAdc, IB = -15 mAdc) (IC = -500 mAdc, IB = -50 mAdc) VCE(sat) Base-Emitter Saturation Voltages (IC = -150 mAdc, IB = -15 mAdc) (IC = -500 mAdc, IB = -50 mAdc) VBE(sat) -- Vdc Vdc DYNAMIC CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = -50 mAdc, VCE = -20 Vdc, f = 100 MHz) fT 200 -- -- MHz Output Capacitance (VCB = -10 Vdc, IE = 0, f = 1.0 MHz) Cc -- -- 8.0 pF Input Capacitance (VEB = -2.0 Vdc, IC = 0, f = 1.0 MHz) Ce -- -- 30 pF ton -- -- 45 ns td -- -- 10 tr -- -- 40 toff -- -- 100 ts -- -- 80 tf -- -- 30 SWITCHING TIMES Turn-On Time 30 Vdc, Vd IC = -150 150 mAdc, Ad (VCC = -30 IB1 = -15 mAdc) Delay Time Rise Time Turn-Off Time (VCC = -6.0 6 0 Vdc, Vd IC = -150 150 mAdc, Ad IB1 = IB2 = -15 mAdc) Storage Time Fall Time ns 2. Pulse Test: Pulse Width 300 s, Duty Cycle = 2.0%. -30 V INPUT Zo = 50 PRF = 150 Hz RISE TIME 2.0 ns INPUT Zo = 50 PRF = 150 Hz RISE TIME 2.0 ns 200 1.0 k 0 -16 V +15 V TO OSCILLOSCOPE RISE TIME 5.0 ns 0 -30 V 50 200 ns 200 ns Figure 1. Delay and Rise Time Test Circuit -6.0 V 1.0 k 37 TO OSCILLOSCOPE RISE TIME 5.0 ns 1.0 k 50 1N916 Figure 2. Storage and Fall Time Test Circuit http://onsemi.com 1062 PZT2907AT1 1000 hFE, CURRENT GAIN TJ = 125C TJ = 25C 100 TJ = -55C 10 -0.1 -1.0 -10 -100 IC, COLLECTOR CURRENT (mA) -1000 f T, CURRENTGAIN BANDWIDTH PRODUCT (MHz) TYPICAL ELECTRICAL CHARACTERISTICS 1000 100 VCE = -20 V TJ = 25C 10 -1.0 Figure 3. DC Current Gain 30 TJ = 25C 20 VBE(sat) @ IC/IB = 10 CAPACITANCE (pF) VOLTAGE (VOLTS) -0.6 -1000 Figure 4. Current Gain Bandwidth Product -1.0 -0.8 -10 -100 IC, COLLECTOR CURRENT (mA) VBE(on) @ VCE = -10 V -0.4 -0.2 Ceb 10 7.0 Ccb 5.0 3.0 VCE(sat) @ IC/IB = 10 0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) -500 2.0 -0.1 Figure 5. "ON" Voltage -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 REVERSE VOLTAGE (VOLTS) Figure 6. Capacitances http://onsemi.com 1063 ON Semiconductor PZT651T1 NPN Silicon Planar Epitaxial Transistor ON Semiconductor Preferred Device This NPN Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. * High Current: 2.0 Amp * The SOT-223 package can be soldered using wave or reflow. * SOT-223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die. * Available in 12 mm Tape and Reel Use PZT651T1 to order the 7 inch/1000 unit reel Use PZT651T3 to order the 13 inch/4000 unit reel * PNP Complement is PZT751T1 SOT-223 PACKAGE HIGH CURRENT NPN SILICON TRANSISTOR SURFACE MOUNT 4 1 2 3 CASE 318E-04, STYLE 1 TO-261AA COLLECTOR 2,4 BASE 1 EMITTER 3 MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter Voltage VCEO 60 Vdc Collector-Base Voltage VCBO 80 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector Current IC 2.0 Adc Total Power Dissipation @ TA = 25C(1) Derate above 25C PD 0.8 6.4 Watts mW/C Storage Temperature Range Tstg -65 to 150 C Junction Temperature TJ 150 C Symbol Max Unit RJA 156 C/W TL 260 10 C Sec DEVICE MARKING 651 THERMAL CHARACTERISTICS Characteristic Thermal Resistance from Junction-to-Ambient in Free Air Maximum Temperature for Soldering Purposes Time in Solder Bath 1. Device mounted on a FR-4 glass epoxy printed circuit board using minimum recommended footprint. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 2 1064 Publication Order Number: PZT651T1/D PZT651T1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristics Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO 60 -- Vdc Collector-Emitter Breakdown Voltage (IC = 100 Adc, IE = 0) V(BR)CBO 80 -- Vdc Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO 5.0 -- Vdc Base-Emitter Cutoff Current (VEB = 4.0 Vdc) IEBO -- 0.1 Adc Collector-Base Cutoff Current (VCB = 80 Vdc, IE = 0) ICBO -- 100 nAdc 75 75 75 40 -- -- -- -- -- -- 0.5 0.3 OFF CHARACTERISTICS ON CHARACTERISTICS (2) DC Current Gain (IC = 50 mAdc, VCE = 2.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc) (IC = 1.0 Adc, VCE = 2.0 Vdc) (IC = 2.0 Adc, VCE = 2.0 Vdc) hFE -- Collector-Emitter Saturation Voltages (IC = 2.0 Adc, IB = 200 mAdc) (IC = 1.0 Adc, IB = 100 mAdc) VCE(sat) Base-Emitter Voltages (IC = 1.0 Adc, VCE = 2.0 Vdc) VBE(on) -- 1.0 Vdc Base-Emitter Saturation Voltage (IC = 1.0 Adc, IB = 100 mAdc) VBE(sat) -- 1.2 Vdc fT 75 -- MHz Current-Gain -- Bandwidth (IC = 50 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 2. Pulse Test: Pulse Width 300 s, Duty Cycle = 2.0% http://onsemi.com 1065 Vdc ON Semiconductor PZT751T1 PNP Silicon Planar Epitaxial Transistor ON Semiconductor Preferred Device This PNP Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. * High Current: 2.0 Amp * The SOT-223 Package can be soldered using wave or reflow. * SOT-223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die * Available in 12 mm Tape and Reel Use PZT751T1 to order the 7 inch/1000 unit reel. Use PZT751T3 to order the 13 inch/4000 unit reel. * NPN Complement is PZT651T1 4 1 2 3 CASE 318E-11, STYLE 1 TO-261AA COLLECTOR 2, 4 BASE 1 EMITTER 3 MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter Voltage VCEO 60 Vdc Collector-Base Voltage VCBO 80 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector Current IC 2.0 Adc Total Power Dissipation @ TA = 25C(1) Derate above 25C PD 0.8 6.4 Watts mW/C Storage Temperature Range Tstg -65 to 150 C Junction Temperature TJ 150 C RJA 156 C/W TL 260 10 C Sec DEVICE MARKING ZT751 THERMAL CHARACTERISTICS Thermal Resistance from Junction-to-Ambient in Free Air Maximum Temperature for Soldering Purposes Time in Solder Bath 1. Device mounted on a FR-4 glass epoxy printed circuit board using minimum recommended footprint. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 2 1066 Publication Order Number: PZT751T1/D PZT751T1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO 60 -- Vdc Collector-Emitter Breakdown Voltage (IC = 100 Adc, IE = 0) V(BR)CBO 80 -- Vdc Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO 5.0 -- Vdc Base-Emitter Cutoff Current (VEB = 4.0 Vdc) IEBO -- 0.1 Adc Collector-Base Cutoff Current (VCB = 80 Vdc, IE = 0) ICBO -- 100 nAdc 75 75 75 40 -- -- -- -- -- -- 0.5 0.3 Characteristics OFF CHARACTERISTICS ON CHARACTERISTICS (2) DC Current Gain (IC = 50 mAdc, VCE = 2.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc) (IC = 1.0 Adc, VCE = 2.0 Vdc) (IC = 2.0 Adc, VCE = 2.0 Vdc) hFE -- Collector-Emitter Saturation Voltages (IC = 2.0 Adc, IB = 200 mAdc) (IC = 1.0 Adc, IB = 100 mAdc) VCE(sat) Base-Emitter Voltages (IC = 1.0 Adc, VCE = 2.0 Vdc) VBE(on) -- 1.0 Vdc Base-Emitter Saturation Voltage (IC = 1.0 Adc, IB = 100 mAdc) VBE(sat) -- 1.2 Vdc fT 75 -- MHz Current-Gain-Bandwidth (IC = 50 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 2. Pulse Test: Pulse Width 300 s, Duty Cycle = 2.0%. http://onsemi.com 1067 Vdc ON Semiconductor PZTA42T1 High Voltage Transistor Surface Mount ON Semiconductor Preferred Device NPN Silicon SOT-223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage (Open Base) VCEO 300 Vdc Collector-Base Voltage (Open Emitter) VCBO 300 Vdc Emitter-Base Voltage (Open Collector) VEBO 6.0 Vdc Collector Current (DC) IC 500 mAdc Total Power Dissipation @ TA = 25C(1) PD 1.5 Watts Storage Temperature Range Tstg -65 to +150 C Junction Temperature TJ 150 C 4 1 2 3 CASE 318E-04, STYLE 1 TO-261AA DEVICE MARKING P1D THERMAL CHARACTERISTICS COLLECTOR 2,4 Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Ambient(1) RJA 83.3 C/W BASE 1 EMITTER 3 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Min Max Unit Collector-Emitter Breakdown Voltage(2) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 300 -- Vdc Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0) V(BR)CBO 300 -- Vdc Emitter-Base Breakdown Voltage (IE = 100 Adc, IC = 0) V(BR)EBO 6.0 -- Vdc Collector-Base Cutoff Current (VCB = 200 Vdc, IE = 0) ICBO -- 0.1 Adc Emitter-Base Cutoff Current (VBE = 6.0 Vdc, IC = 0) IEBO -- 0.1 Adc Characteristics OFF CHARACTERISTICS 1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min 0.93 in2. 2. Pulse Test Conditions, tp = 300 s, = 0.02. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 4 1068 Publication Order Number: PZTA42T1/D PZTA42T1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) ON CHARACTERISTICS DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 30 mAdc, VCE = 10 Vdc) hFE -- 25 40 40 -- -- -- fT 50 -- MHz Cre -- 3.0 pF Collector-Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) VCE(sat) -- 0.5 Vdc Base-Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) VBE(sat) -- 0.9 Vdc DYNAMIC CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Feedback Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) http://onsemi.com 1069 PZTA42T1 120 hFE , DC CURRENT GAIN VCE = 10 Vdc TJ = +125C 100 80 25C 60 40 -55C 20 0 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) Figure 7. DC Current Gain 100 C, CAPACITANCE (pF) Ceb @ 1MHz 10 1.0 0.1 0.1 Ccb @ 1MHz 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) 1000 Figure 8. Capacitance 1.4 V, VOLTAGE (VOLTS) 1.2 VCE(sat) @ 25C, IC/IB = 10 VCE(sat) @ 125C, IC/IB = 10 VCE(sat) @ -55C, IC/IB = 10 VBE(sat) @ 25C, IC/IB = 10 1.0 0.8 VBE(sat) @ 125C, IC/IB = 10 0.6 VBE(sat) @ -55C, IC/IB = 10 VBE(on) @ 25C, VCE = 10 V VBE(on) @ 125C, VCE = 10 V VBE(on) @ -55C, VCE = 10 V 0.4 0.2 0.0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100 Figure 9. "ON" Voltages http://onsemi.com 1070 ON Semiconductor PZTA92T1 High Voltage Transistor PNP Silicon ON Semiconductor Preferred Device COLLECTOR 2,4 BASE 1 SOT-223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT EMITTER 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO -300 Vdc Collector-Base Voltage VCBO -300 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current IC -500 mAdc Total Power Dissipation up to TA = 25C(1) PD 1.5 Watts Storage Temperature Range Tstg -65 to +150 C Junction Temperature TJ 150 C Symbol Max Unit RJA 83.3 C/W 4 1 2 3 CASE 318E-04, STYLE 1 TO-261AA DEVICE MARKING P2D THERMAL CHARACTERISTICS Characteristic Thermal Resistance from Junction to Ambient(1) ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC = -1.0 mAdc, IB = 0) V(BR)CEO -300 -- Vdc Collector-Base Breakdown Voltage (IC = -100 Adc, IE = 0) V(BR)CBO -300 -- Vdc Emitter-Base Breakdown Voltage (IE = -100 Adc, IC = 0) V(BR)EBO -5.0 -- Vdc Collector-Base Cutoff Current (VCB = -200 Vdc, IE = 0) ICBO -- -0.25 Adc Emitter-Base Cutoff Current (VBE = -3.0 Vdc, IC = 0) IEBO -- -0.1 Adc 25 40 25 -- -- -- -- -- -0.5 -0.9 Ccb -- 6.0 pF fT 50 -- MHz Characteristic OFF CHARACTERISTICS ON CHARACTERISTICS DC Current Gain(2) (IC = -1.0 mAdc, VCE = -10 Vdc) (IC = -10 mAdc, VCE = -10 Vdc) (IC = -30 mAdc, VCE = -10 Vdc) hFE Saturation Voltages (IC = -20 mAdc, IB = -2.0 mAdc) (IC = -20 mAdc, IB = -2.0 mAdc) -- Vdc VCE(sat) VBE(sat) DYNAMIC CHARACTERISTICS Collector-Base Capacitance @ f = 1.0 MHz (VCB = -20 Vdc, IE = 0) Current-Gain -- Bandwidth Product (IC = -10 mAdc, VCE = -20 Vdc, f = 100 MHz) 1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 in2. 2. Pulse Test: Pulse Width 300 s; Duty Cycle = 2.0%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 4 1071 Publication Order Number: PZTA92T1/D PZTA92T1 300 hFE , DC CURRENT GAIN VCE = 10 Vdc TJ = +125C 250 200 25C 150 -55C 100 50 0 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) C, CAPACITANCE (pF) 100 f, T CURRENT-GAIN BANDWIDTH (MHz) Figure 1. DC Current Gain Cib @ 1MHz 10 Ccb @ 1MHz 1.0 0.1 0.1 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) 1000 150 130 110 90 70 50 TJ = 25C VCE = 20 Vdc F = 20 MHz 30 10 1 Figure 2. Capacitance 3 5 11 13 15 7 9 IC, COLLECTOR CURRENT (mA) 17 19 21 Figure 3. Current-Gain -- Bandwidth 1.4 V, VOLTAGE (VOLTS) 1.2 VCE(sat) @ 25C, IC/IB = 10 VCE(sat) @ 125C, IC/IB = 10 VCE(sat) @ -55C, IC/IB = 10 VBE(sat) @ 25C, IC/IB = 10 1.0 0.8 VBE(sat) @ 125C, IC/IB = 10 VBE(sat) @ -55C, IC/IB = 10 VBE(on) @ 25C, VCE = 10 V VBE(on) @ 125C, VCE = 10 V VBE(on) @ -55C, VCE = 10 V 0.6 0.4 0.2 0.0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100 Figure 4. "ON" Voltages http://onsemi.com 1072 PZTA96ST1 Preferred Device High Voltage Transistor PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO -450 Vdc Collector-Base Voltage VCBO -450 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current IC -500 mAdc Total Power Dissipation Up to TA = 25C (Note 1.) PD 1.5 Watts Storage Temperature Range Tstg -65 to +150 C Junction Temperature TJ 150 C http://onsemi.com COLLECTOR 2,4 BASE 1 EMITTER 3 4 THERMAL CHARACTERISTICS Characteristic Thermal Resistance from Junction to Ambient (Note 1.) Symbol Max Unit RJA 83.3 C ELECTRICAL CHARACTERISTICS (Note 2.) Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC = -1.0 mAdc, IB = 0) V(BR)CEO -450 - Vdc Collector-Emitter Breakdown Voltage (IC = -100 Adc, IE = 0) V(BR)CBO -450 - Vdc Emitter-Base Breakdown Voltage (IE = -10 Adc, IC = 0) V(BR)EBO -5.0 - Vdc Collector-Base Cutoff Current (VCB = -400 Vdc, IE = 0) ICBO - -0.1 Adc Emitter-Base Cutoff Current (VBE = -4.0 Vdc, IC = 0) IEBO - -0.1 Adc hFE 50 150 - VCE(sat) VBE(sat) - - -0.6 -1.0 1 AWW ZTA96 2 3 SOT-223, TO-261AA CASE 318E STYLE 1 A WW = Location = Work Week OFF CHARACTERISTICS ORDERING INFORMATION Device Package Shipping PZTA96ST1 SOT-223 1000/Tape & Reel PZTA96ST3 SOT-223 4000/Tape & Reel Preferred devices are recommended choices for future use and best overall value. ON CHARACTERISTICS DC Current Gain (Note 3.) (IC = -10 mAdc, VCE = -10 Vdc) Saturation Voltages (IC = -20 mAdc, IB = -2.0 mAdc) (IC = -20 mAdc, IB = -2.0 mAdc) Vdc 1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 in2. 2. TA = 25C unless otherwise noted. 3. Pulse Test: Pulse Width 300 s; Duty Cycle = 2.0%. Semiconductor Components Industries, LLC, 2001 September, 2001 - Rev. 0 1073 Publication Order Number: PZTA96ST1/D RB751V40T1 Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. http://onsemi.com * Extremely Fast Switching Speed * Extremely Low Forward Voltage - 0.28 Volts (Typ) @ IF = 1 mAdc * Low Reverse Current 40 V SCHOTTKY BARRIER DIODE 1 CATHODE 2 ANODE MAXIMUM RATINGS Rating Symbol Value Unit VRM 40 V Reverse Voltage VR 30 Vdc Electrostatic Discharge ESD Peak Reverse Voltage 1 2 HBM Class: 1C MM Class: A SOD-323 CASE 477 PLASTIC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board, (Note 1.) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature Range Symbol Max Unit PD 200 mW 1.57 mW/C RJA 635 C/W TJ, Tstg -55 to +150 C MARKING DIAGRAMS 5E M 1. FR-5 Minimum Pad 5E M = Specific Device Code = Date Code ORDERING INFORMATION Device RB751V40T1 Semiconductor Components Industries, LLC, 2001 May, 2001 - Rev. 1 1074 Package Shipping SOD-323 3000/Tape & Reel Publication Order Number: RB751V40T1/D RB751V40T1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)R 30 - - Volts Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT - 2.0 2.5 pF Reverse Leakage (VR = 30 V) IR - 300 500 nAdc Forward Voltage (IF = 1.0 mAdc) VF - 0.28 0.37 Vdc Reverse Breakdown Voltage (IR = 10 A) 820 +10 V 2k 100 H 0.1 F IF IF 50 OUTPUT PULSE GENERATOR tp tr 0.1 F t trr 10% DUT 50 INPUT SAMPLING OSCILLOSCOPE 90% VR IR INPUT SIGNAL Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr Figure 1. Recovery Time Equivalent Test Circuit http://onsemi.com 1075 t iR(REC) = 1 mA OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) RB751V40T1 1000 IR , REVERSE CURRENT (A) 1.0 150C 0.1 125C 0 0.05 TA = 150C 100 125C 10 85C 1.0 0.1 25C 0.01 85C 0.1 0.15 25C 0.2 -40C 0.25 0.3 0.35 -55C 0.4 0.45 0.001 0.5 5 0 10 15 20 25 VR, REVERSE VOLTAGE (VOLTS) VF, FORWARD VOLTAGE (VOLTS) Figure 2. Typical Forward Voltage 2.5 2.0 1.5 1.0 0.5 0 0 2.0 4.0 30 Figure 3. Reverse Current versus Reverse Voltage 3.0 C T, CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 10 6.0 8.0 10 12 14 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Typical Capacitance http://onsemi.com 1076 16 18 35 UMA4NT1, UMA6NT1 Preferred Devices Dual Common Emitter Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the UMC2NT1 series, two BRT devices are housed in the SOT-353 package which is ideal for low power surface mount applications where board space is at a premium. * * * * 3 2 1 R1 R1 Q1 Q2 4 5 Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7 inch/3000 Unit Tape and Reel MARKING DIAGRAM 5 4 MAXIMUM RATINGS (TA = 25C unless otherwise noted, common for Q1 Ux and Q2, - minus sign for Q1 (PNP) omitted) Rating Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc RJA 833 C/W TJ, Tstg -65 to +150 C *150 mW Collector Current SC-88A/SOT-353 CASE 419A STYLE 7 1 2 3 Ux = Device Marking x = 0 or 1 THERMAL CHARACTERISTICS Thermal Resistance - Junction-to-Ambient (surface mounted) Operating and Storage Temperature Range Total Package Dissipation @ TA = 25C (Note 1.) PD DEVICE MARKING AND RESISTOR VALUES Device UMA4NT1 UMA6NT1 Marking R1 (K) R2 (K) U0 U1 10 47 ORDERING INFORMATION Device Package Shipping UMA4NT1 SOT-323 3000/Tape & Reel UMA6NT1 SOT-323 3000/Tape & Reel Preferred devices are recommended choices for future use and best overall value. 1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. Semiconductor Components Industries, LLC, 2001 April, 2001 - Rev. 1 1077 Publication Order Number: UMA4NT1/D UMA4NT1, UMA6NT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO - - 100 nAdc Collector-Emitter Cutoff Current (VCB = 50 V, IB = 0) ICEO - - 500 nAdc Emitter-Base Cutoff Current (VEB = 6.0, IC = 5.0 mA) IEBO - - - - 0.9 0.2 mAdc Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) V(BR)CBO 50 - - Vdc Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) V(BR)CEO 50 - - Vdc hFE 160 160 250 250 - - VCE(SAT) - - 0.25 Vdc Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) VOL - - 0.2 Vdc Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k) VOH 4.9 - - Vdc R1 7.0 33 10 47 13 61 k OFF CHARACTERISTICS UMA4NT1 UMA6NT1 ON CHARACTERISTICS DC Current Gain (VCE = 10 V, IC = 5.0 mA) UMA4NT1 UMA6NT1 Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) UMA4NT1 UMA6NT1 PD , POWER DISSIPATION (MILLIWATTS) Input Resistor 250 200 150 100 50 0 -50 RJA = 833C/W 0 50 100 TA, AMBIENT TEMPERATURE (C) Figure 1. Derating Curve http://onsemi.com 1078 150 UMA4NT1, UMA6NT1 10 1000 IC/IB = 10 25C hFE, DC CURRENT GAIN VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) Typical Electrical Characteristics - UMA4NT1 TA = 75C 1 -25C 0.1 -25C 100 25C 10 VCE = 10 V 1 0.01 0 10 20 30 40 50 60 IC, COLLECTOR CURRENT (mA) 70 80 1 10 100 IC, COLLECTOR CURRENT (mA) Figure 2. VCE(sat) versus IC 100 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 mA TA = 25C 10 8 6 4 2 0 1000 Figure 3. DC Current Gain 12 Cob, CAPACITANCE (pF) TA = 75C 0 5 10 15 20 25 30 40 35 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 10 75C TA = -25C 1 25C 0.1 0.01 VO = 5 V 0 Figure 4. Output Capacitance 1 2 3 4 VIN, INPUT VOLTAGE (VOLTS) 5 6 Figure 5. Output Current versus Input Voltage http://onsemi.com 1079 UMA4NT1, UMA6NT1 10 1000 IC/IB = 10 25C 1 hFE, DC CURRENT GAIN VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) Typical Electrical Characteristics - UMA6NT1 -25C TA = 75C 0.1 25C -25C 100 VCE = 10 V 10 0.01 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) 60 1 10 IC, COLLECTOR CURRENT (mA) Figure 6. VCE(sat) versus IC 100 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 mA TA = 25C 10 8 6 4 2 0 100 Figure 7. DC Current Gain 12 Cob, CAPACITANCE (pF) TA = 75C 0 5 10 15 20 25 30 40 35 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 75C 10 TA = -25C 1 25C 0.1 0.01 0.001 VO = 5 V 0 Figure 8. Output Capacitance 1 2 3 4 VIN, INPUT VOLTAGE (VOLTS) Figure 9. Output Current versus Input Voltage http://onsemi.com 1080 5 UMC2NT1, UMC3NT1, UMC5NT1 Preferred Devices Dual Common Base-Collector Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 3 1 R1 The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the UMC2NT1 series, two complementary BRT devices are housed in the SOT-353 package which is ideal for low power surface mount applications where board space is at a premium. * * * * 2 R2 Q2 R2 Q1 R1 4 5 MARKING DIAGRAM Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7 inch/3000 Unit Tape and Reel. 5 Ux MAXIMUM RATINGS (TA = 25C unless otherwise noted, common for Q1 and Q2, - minus sign for Q1 (PNP) omitted) Rating Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc RJA 833 C/W TJ, Tstg -65 to +150 C PD *150 mW Collector Current 4 SC-88A/SOT-323 CASE 419A STYLE 6 1 2 3 Ux = Device Marking x = 2, 3 or 5 ORDERING INFORMATION THERMAL CHARACTERISTICS Thermal Resistance - Junction-to-Ambient (surface mounted) Operating and Storage Temperature Range Total Package Dissipation @ TA = 25C (Note 1.) Device Package Shipping UMC2NT1 SOT-323 3000/Tape & Reel UMC3NT1 SOT-323 3000/Tape & Reel UMC5NT1 SOT-323 3000/Tape & Reel Preferred devices are recommended choices for future use and best overall value. DEVICE MARKING AND RESISTOR VALUES Transistor 1 - PNP Transistor 2 - NPN Device Marking R1 (K) R2 (K) R1 (K) R2 (K) UMC2NT1 UMC3NT1 UMC5NT1 U2 U3 U5 22 10 4.7 22 10 10 22 10 47 22 10 47 1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. Semiconductor Components Industries, LLC, 2001 April, 2001 - Rev. 1 1081 Publication Order Number: UMC2NT1/D UMC2NT1, UMC3NT1, UMC5NT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO - - 100 nAdc Collector-Emitter Cutoff Current (VCB = 50 V, IB = 0) ICEO - - 500 nAdc Emitter-Base Cutoff Current (VEB = 6.0, IC = 5.0 mA) IEBO - - - - - - 0.2 0.5 1.0 mAdc Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) V(BR)CBO 50 - - Vdc Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) V(BR)CEO 50 - - Vdc hFE 60 35 20 100 60 35 - - - VCE(SAT) - - 0.25 Vdc Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) VOL - - 0.2 Vdc Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k) VOH 4.9 - - Vdc k Q1 TRANSISTOR: PNP OFF CHARACTERISTICS UMC2NT1 UMC3NT1 UMC5NT1 ON CHARACTERISTICS DC Current Gain (VCE = 10 V, IC = 5.0 mA) UMC2NT1 UMC3NT1 UMC5NT1 Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) Input Resistor UMC2NT1 UMC3NT1 UMC5NT1 R1 15.4 7.0 3.3 22 10 4.7 28.6 13 6.1 Resistor Ratio UMC2NT1 UMC3NT1 UMC5NT1 R1/R2 0.8 0.8 0.38 1.0 1.0 0.47 1.2 1.2 0.56 Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO - - 100 nAdc Collector-Emitter Cutoff Current (VCB = 50 V, IB = 0) ICEO - - 500 nAdc Emitter-Base Cutoff Current (VEB = 6.0, IC = 5.0 mA) IEBO - - - - - - 0.2 0.5 0.1 mAdc Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) V(BR)CBO 50 - - Vdc Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) V(BR)CEO 50 - - Vdc hFE 60 35 80 100 60 140 - - - Q2 TRANSISTOR: NPN OFF CHARACTERISTICS UMC2NT1 UMC3NT1 UMC5NT1 ON CHARACTERISTICS DC Current Gain (VCE = 10 V, IC = 5.0 mA) UMC2NT1 UMC3NT1 UMC5NT1 Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) VCE(SAT) - - 0.25 Vdc Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) VOL - - 0.2 Vdc Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k) VOH 4.9 - - Vdc k Input Resistor UMC2NT1 UMC3NT1 UMC5NT1 R1 15.4 7.0 33 22 10 47 28.6 13 61 Resistor Ratio UMC2NT1 UMC3NT1 UMC5NT1 R1/R2 0.8 0.8 0.8 1.0 1.0 1.0 1.2 1.2 1.2 http://onsemi.com 1082 UMC2NT1, UMC3NT1, UMC5NT1 PD , POWER DISSIPATION (MILLIWATTS) 250 200 150 100 50 0 -50 RJA = 833C/W 0 50 100 TA, AMBIENT TEMPERATURE (C) Figure 1. Derating Curve http://onsemi.com 1083 150 UMC2NT1, UMC3NT1, UMC5NT1 1000 10 VCE = 10 V IC/IB = 10 1 hFE, DC CURRENT GAIN VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- UMC2NT1 PNP TRANSISTOR 25C TA=-25C 75C 0.1 0.01 0 40 20 IC, COLLECTOR CURRENT (mA) TA=75C 100 10 50 10 1 Figure 3. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 3 2 1 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) TA=-25C 10 1 0.1 0.01 0.001 50 Figure 4. Output Capacitance 100 25C 75C f = 1 MHz lE = 0 mA TA = 25C V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 4 0 VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V 10 25C 75C 1 0 10 8 9 Figure 5. Output Current versus Input Voltage TA=-25C 0.1 100 IC, COLLECTOR CURRENT (mA) Figure 2. VCE(sat) versus IC 0 25C -25C 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 6. Input Voltage versus Output Current http://onsemi.com 1084 50 10 UMC2NT1, UMC3NT1, UMC5NT1 1 1000 IC/IB = 10 VCE = 10 V TA=-25C 25C hFE, DC CURRENT GAIN VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- UMC2NT1 NPN TRANSISTOR 0.1 75C 0.01 0.001 0 20 40 IC, COLLECTOR CURRENT (mA) TA=75C 25C -25C 100 10 50 1 10 IC, COLLECTOR CURRENT (mA) Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 2 1 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 25C 75C f = 1 MHz IE = 0 mA TA = 25C 1 0.1 0.01 0.001 50 TA=-25C 10 VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 10 VO = 0.2 V TA=-25C 25C 75C 1 0.1 0 10 8 9 10 Figure 10. Output Current versus Input Voltage Figure 9. Output Capacitance V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 4 3 100 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 11. Input Voltage versus Output Current http://onsemi.com 1085 50 UMC2NT1, UMC3NT1, UMC5NT1 1000 1 TA=-25C 0.1 25C 75C 0.01 0 20 25C 100 10 -25C 10 IC, COLLECTOR CURRENT (mA) Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 50 1 100 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 mA TA = 25C 3 2 1 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) TA=-25C 10 1 0.1 0.01 0.001 50 100 VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=-25C 25C 75C 1 0 10 8 9 Figure 15. Output Current versus Input Voltage 10 0.1 100 25C 75C Figure 14. Output Capacitance V in , INPUT VOLTAGE (VOLTS) 0 TA=75C IC, COLLECTOR CURRENT (mA) 40 4 Cob , CAPACITANCE (pF) VCE = 10 V IC/IB = 10 hFE , DC CURRENT GAIN VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- UMC3NT1 PNP TRANSISTOR 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 16. Input Voltage versus Output Current http://onsemi.com 1086 50 10 UMC2NT1, UMC3NT1, UMC5NT1 1000 1 25C TA=-25C 0.1 75C 0.01 0.001 0 20 TA=75C 25C -25C 100 10 50 40 1 100 10 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 17. VCE(sat) versus IC Figure 18. DC Current Gain 4 100 3 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 mA TA = 25C 2 1 75C 25C TA=-25C 10 1 0.1 0.01 VO = 5 V 0 0 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 0.001 Figure 19. Output Capacitance 2 0 4 6 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=-25C 10 25C 75C 1 0.1 0 10 8 10 Figure 20. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) VCE = 10 V IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- UMC3NT1 NPN TRANSISTOR 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 21. Input Voltage versus Output Current http://onsemi.com 1087 50 UMC2NT1, UMC3NT1, UMC5NT1 1000 1 VCE = 10 V IC/IB = 10 TA=75C 0.1 0.01 hFE, DC CURRENT GAIN VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- UMC5NT1 PNP TRANSISTOR 25C -25C 0 10 20 30 50 40 100 1 60 1 10 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 22. VCE(sat) versus IC Figure 23. DC Current Gain 1000 100 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 mA TA = 25C 10 Cob , CAPACITANCE (pF) 25C -25C 10 12 8 6 4 SERIES 1 2 0 TA=75C 0 5 10 20 30 15 25 35 VR, REVERSE BIAS VOLTAGE (VOLTS) 40 45 Figure 24. Output Capacitance 75C 10 1 VO = 5 V 0.1 0.01 TA=-25C 25C 0 2 4 6 8 Vin, INPUT VOLTAGE (VOLTS) 10 12 Figure 25. Output Current versus Input Voltage http://onsemi.com 1088 UMC2NT1, UMC3NT1, UMC5NT1 10 1000 VCE = 10 V IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- UMC5NT1 NPN TRANSISTOR 1 25C TA=-25C 75C 0.1 0.01 0 TA=75C 25C -25C 100 10 50 20 40 IC, COLLECTOR CURRENT (mA) 10 IC, COLLECTOR CURRENT (mA) 1 Figure 26. VCE(sat) versus IC 1 100 IC, COLLECTOR CURRENT (mA) 0.4 0.2 0 0 25C 75C 0.6 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) TA=-25C 10 1 0.1 0.01 0.001 VO = 5 V 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 100 VO = 0.2 V TA=-25C 10 25C 75C 1 0.1 0 10 8 10 Figure 29. Output Current versus Input Voltage Figure 28. Output Capacitance V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) Figure 27. DC Current Gain f = 1 MHz IE = 0 mA TA = 25C 0.8 100 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 30. Input Voltage versus Output Current http://onsemi.com 1089 http://onsemi.com 1090 CHAPTER 3 Packaging and Case Outlines http://onsemi.com 1091 http://onsemi.com 1092 DL126TRS/D Tape & Reel and Packaging Specifications for Small-Signal Transistors, FETs and Diodes http://onsemi.com Excerpted from the ON Semiconductor Small-Signal Transistors, FETs and Diodes Device Data Book, DL126/D. For the most current Tape & Reel information, please download BRD8011/D from our website by clicking here. Embossed Tape and Reel is used to facilitate automatic pick and place equipment feed requirements. The tape is used as the shipping container for various products and requires a minimum of handling. The antistatic/conductive tape provides a secure cavity for the product when sealed with the "peel-back" cover tape. * * * * * Two Reel Sizes Available (7 and 13) Used for Automatic Pick and Place Feed Systems Minimizes Product Handling EIA 481, -1, -2 SOT-23, SC-59, SC-70/SOT-323, SC-75/SOT-416/SC-90, SC-88/SOT-363, * * SC-88A/SOT-353, SC-74/TSOP-6, SOD-123, SOD-323 in 8 mm Tape SOT-89, SOT-223 in 12 mm Tape SO-16 in 16 mm Tape Use the standard device title and add the required suffix as listed in the option table below (Table 1). Note that the individual reels have a finite number of devices depending on the type of product contained in the tape. Also note the minimum lot size is one full reel for each line item, and orders are required to be in increments of the single reel quantity. Table 1. EMBOSSED TAPE AND REEL ORDERING INFORMATION Devices Per Reel and Minimum Order Quantity Device Suffix (7) (13) 3,000 10,000 T1 T3 178 (7) 3,000 T1 4 178 330 (7) (13) 3,000 10,000 T1 T3 8 4 178 (7) 3,000 T1 SC-88, SOT-363 8 4 178 (7) 3,000 T1 SC-88A, SOT-353 8 4 178 (7) 3,000 T1 SC-74, TSOP-6 8 4 178 (7) 3,000 T1 SOD-123 8 8 4 178 330 (7) (13) 3,000 10,000 T1 T3 SOD-323 8 4 178 (7) 3,000 T1 SOT-89 12 8 178 (7) 1,000 T1 SOT-223 12 12 8 178 330 (7) (13) 1,000 4,000 T1 T3 SO-16 16 16 8 178 330 (7) (13) 500 2,500 R1 R2 Package Tape Width (mm) Pitch mm (inch) SOT-23 8 8 4 178 330 SC-59 8 4 SC-70, SOT-323 8 8 SC-75, SOT-416, SC-90 Semiconductor Components Industries, LLC, 2001 September, 2001 - Rev.1 1093 Reel Size mm (inch) Publication Order Number: DL126TRS/D DL126TRS/D EMBOSSED TAPE AND REEL DATA FOR DISCRETES T Max Outside Dimension Measured at Edge 1.5 mm Min (.06) A 13.0 mm 0.5 mm (.512 .002) 20.2 mm Min (.795) 50 mm Min (1.969) Full Radius G Size A Max 8 mm 330 mm (12.992) 8.4 mm + 1.5 mm, -0.0 (.33 + .059, -0.00) 14.4 mm (.56) 12 mm 330 mm (12.992) 12.4 mm + 2.0 mm, -0.0 (.49 + .079, -0.00) 18.4 mm (.72) 16 mm 360 mm (14.173) 16.4 mm + 2.0 mm, -0.0 (.646 + .078, -0.00) 22.4 mm (.882) 24 mm 360 mm (14.173) 24.4 mm + 2.0 mm, -0.0 (.961 + .070, -0.00) 30.4 mm (1.197) G Inside Dimension Measured Near Hub T Max Figure 1. Reel Dimensions Metric Dimensions Govern -- English are in parentheses for reference only SOD-323, SOD-123 SC-59, SC-70, SC-75, SOT-23 SC-88, SOT-363 T1 Orientation 8 mm 8 mm 8 mm TSOP-6, SC-74 T1 Orientation SOT-89 R1 Orientation 8 mm 8 mm 12 mm SOT-223 SO-16 12 mm 16 mm SC-88A, SOT-353 T1 Orientation Direction of Feed Figure 2. Typical Reel Orientations http://onsemi.com 1094 DL126TRS/D Figure 3. CARRIER TAPE SPECIFICATIONS P0 K P2 D t 10 Pitches Cumulative Tolerance on Tape 0.2 mm ( 0.008) E Top Cover Tape A0 K0 B1 F W B0 See Note 1 P For Machine Reference Only Including Draft and RADII Concentric Around B0 D1 For Components 2.0 mm x 1.2 mm and Larger Center Lines of Cavity Embossment User Direction of Feed * Top Cover Tape Thickness (t1) 0.10 mm (.004) Max. Bar Code Label R Min Tape and Components Shall Pass Around Radius "R" Without Damage Embossed 100 mm Carrier (3.937) 1 mm Max Bending Radius 10 Maximum Component Rotation Embossment Typical Component Cavity Center Line Tape 1 mm (.039) Max 250 mm (9.843) Camber (Top View) Allowable Camber To Be 1 mm/100 mm Nonaccumulative Over 250 mm Typical Component Center Line Table 2. DIMENSIONS Tape Size B1 Max D D1 E F K P0 P2 R Min T Max W Max 8mm 4.55mm (.179) 1.0Min (.039) 1.750.1mm (.069.004) 004 ) 3.50.05mm (.138.002) 2.4mmMax (.094) 4.00.1mm 004)) (.157.004 2.00.1mm (.079.002) 002 ) 25mm (.98) 0.6mm (.024)) (.024 8.3mm (.327) 12mm 8.2mm (.323) 1.5+0.1mm -0.0 (.059+.004 -0.0) 5.50.05mm (.217.002) 6.4mmMax (.252) 16mm 12.1mm (.476) 7.50.10mm (.295.004) 7.9mmMax (.311) 16.3mm (.642) 24mm 20.1mm (.791) 11.50.1mm (.453.004) 11.9mmMax (.468) 24.3mm (.957) 1.5mmMin (.060)) (.060 30mm (1.18)) (1.18 12.30mm (.470.012) Metric dimensions govern -- English are in parentheses for reference only. 1. A0, B0, and K0 are determined by component size. The clearance between the components and the cavity must be within 0.05 mm min. to 0.50 mm max., the component cannot rotate more than 10 within the determined cavity. 2. If B1 exceeds 4.2 mm (0.165) for 8 mm embossed tape, the tape may not feed through all tape feeders. 3. Pitch information is contained in Table 1. Embossed Tape and Reel Ordering Information on pg. 1093. http://onsemi.com 1095 DL126TRS/D TO-92 EIA, IEC, EIAJ Radial Tape in Fan Fold Box or On Reel Radial tape in fan fold box or on reel of the reliable TO-92 package are the best methods of capturing devices for automatic insertion in printed circuit boards. These methods of taping are compatible with various equipment for active and passive component insertion. US/European Suffix Conversions * * * * * * Available in Fan Fold Box Available on 365 mm Reels Accommodates All Standard Inserters Allows Flexible Circuit Board Layout 2.5 mm Pin Spacing for Soldering EIA-468, IEC 286-2, EIAJ RC1008B US EUROPE RLRA RL RLRE RL1 RLRM ZL1 Package Suffixes Device Suffix Leadform Type Shipping (None) Straight 5000/Bag RLRA Leadformed 2000/Tape & Reel RLRE Leadformed 2000/Tape & Reel RLRM Leadformed 2000/Fan Fold Box RLRP Leadformed 2000/Fan Fold Box Ordering Notes: When ordering radial tape in fan fold box or on reel, specify the style per Figures 4 through 7. Add the suffix "RLR" and "Style" to the device title, i.e. MPS3904RLRA. This will be a standard MPS3904 leadformed, radial taped and supplied on a reel per Figure 4. Fan Fold Box Information -- Order in increments of 2000. Reel Information -- Order in increments of 2000. CARRIER STRIP CARRIER STRIP ROUNDED SIDE ADHESIVE TAPE ADHESIVE TAPE FEED FLAT SIDE FEED Rounded side of transistor and adhesive tape visible. Flat side of transistor and adhesive tape visible. Figure 4. Style A Figure 5. Style E http://onsemi.com 1096 DL126TRS/D CCCCCCC CCCCCCC CCCCCCC CCCCCCC ADHESIVE TAPE ON TOP SIDE ADHESIVE TAPE ON TOP SIDE FLAT SIDE ROUNDED SIDE CARRIER STRIP CARRIER STRIP FLAT SIDE OF TRANSISTOR AND ADHESIVE TAPE VISIBLE. ROUNDED SIDE OF TRANSISTOR AND ADHESIVE TAPE VISIBLE. Style P fan fold box is equivalent to styles A and B of reel pack dependent on feed orientation from box. Style M fan fold box is equivalent to styles E and F of reel pack dependent on feed orientation from box. Figure 6. Style M Figure 7. Style P H2A H2A H2B H2B H W2 H4 H5 T1 L1 H1 W1 W L F1 T2 F2 P2 D P2 P1 T P Figure 8. Device Positioning on Tape Dimensions for Device Positioning on Tape for Fan Fold Box Specification Inches Millimeter Min Max Min D Tape Feedhole Diameter 0.1496 0.1653 3.8 4.2 D2 Component Lead Thickness Dimension 0.015 0.020 0.38 0.51 Component Lead Pitch 0.0945 0.110 2.4 2.8 .059 .156 1.5 4.0 0.3346 0.3741 8.5 9.5 0 0.039 0 1.0 Symbol F1, F2 Item H Bottom of Component to Seating Plane H1 Feedhole Location H2A Deflection Left or Right H2B Deflection Front or Rear H4 Feedhole to Bottom of Component H5 Max 0 0.051 0 1.0 0.7086 0.768 18 19.5 Feedhole to Seating Plane 0.610 0.649 15.5 16.5 L Defective Unit Clipped Dimension 0.3346 0.433 8.5 11 L1 Lead Wire Enclosure 0.09842 -- 2.5 -- P Feedhole Pitch 0.4921 0.5079 12.5 12.9 P1 Feedhole Center to Center Lead 0.2342 0.2658 5.95 6.75 P2 First Lead Spacing Dimension 0.1397 0.1556 3.55 3.95 0.06 0.08 0.15 0.20 T Adhesive Tape Thickness http://onsemi.com 1097 DL126TRS/D Dimensions for Device Positioning on Tape for Fan Fold Box Specification Inches Symbol T1 Item Overall Taped Package Thickness Millimeter Min Max Min Max -- 0.0567 -- 1.44 0.027 0.35 0.65 T2 Carrier Strip Thickness 0.014 W Carrier Strip Width 0.6889 0.7481 17.5 19 W1 Adhesive Tape Width 0.2165 0.2841 5.5 6.3 W2 Adhesive Tape Position .0059 0.01968 .15 0.5 NOTES: 1. Maximum alignment deviation between leads not to be greater than 0.2 mm. 2. Defective components shall be clipped from the carrier tape such that the remaining protrusion (L) does not exceed a maximum of 11 mm. 3. Component lead to tape adhesion must meet the pull test requirements established in Figures 5, 6 and 7. 4. Maximum non-cumulative variation between tape feed holes shall not exceed 1 mm in 20 pitches. 5. Holddown tape not to extend beyond the edge(s) of carrier tape and there shall be no exposure of adhesive. 6. No more than 1 consecutive missing component is permitted. 7. A tape trailer and leader, having at least three feed holes is required before the first and after the last component. 8. Splices will not interfere with the sprocket feed holes. CORE DIA. 82mm 1mm ARBOR HOLE DIA. 30.5mm 0.25mm 330 mm 13" MAX MARKING NOTE 252 mm MAX 9.92" HUB RECESS 76.2mm 1mm RECESS DEPTH 9.5mm MIN 365mm + 3, - 0mm 38.1mm 1mm 58 mm 2.28" MAX 48 mm MAX Figure 9. Fan Fold Box Dimensions Material used must not cause deterioration of components or degrade lead solderability Figure 10. Reel Dimensions ADHESION PULL TESTS 500 GRAM PULL FORCE 70 GRAM PULL FORCE 100 GRAM PULL FORCE 16 mm HOLDING FIXTURE The component shall not pull free with a 300 gram load applied to the leads for 3 1 second. Figure 11. Test #1 16 mm HOLDING FIXTURE HOLDING FIXTURE The component shall not pull free with a 70 gram load applied to the leads for 3 1 second. Figure 12. Test #2 http://onsemi.com 1098 There shall be no deviation in the leads and no component leads shall be pulled free of the tape with a 500 gram load applied to the component body for 3 1 second. Figure 13. Test #3 Case Outlines http://onsemi.com 1099 Case Outlines TO-226AA, TO-92 CASE 29-11 ISSUE AL SCALE 1:1 A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X-X 1 N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- N TO-226AE, TO-92 (1 WATT) CASE 29-10 ISSUE AL SCALE 1:1 A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSIONS D AND J APPLY BETWEEN L AND K MIMIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R SEATING PLANE P L F K X X DIM A B C D F G H J K L N P R D G H J R 1 2 3 N C SECTION X-X N http://onsemi.com 1100 INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.021 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 --0.250 --0.080 0.105 --0.100 0.135 --- MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.457 0.533 0.407 0.482 1.15 1.39 2.42 2.66 0.46 0.61 12.70 --6.35 --2.04 2.66 --2.54 3.43 --- TO-226AC, TO-92 2-LEAD CASE 182-06 ISSUE L SCALE 1:1 A B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND ZONE R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. R SEATING PLANE EE EE D L P J K DIM A B C D G H J K L N P R V SECTION X-X X X D G H V 1 2 C INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.050 BSC 0.100 BSC 0.014 0.016 0.500 --0.250 --0.080 0.105 --0.050 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.21 4.32 5.33 3.18 4.19 0.407 0.533 1.27 BSC 2.54 BSC 0.36 0.41 12.70 --6.35 --2.03 2.66 --1.27 2.93 --3.43 --- N N TO-236AB, SOT-23 CASE 318-08 ISSUE AH SCALE 4:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-03 AND -07 OBSOLETE, NEW STANDARD 318-08. A L 3 1 V B S 2 G C D H K J http://onsemi.com 1101 DIM A B C D G H J K L S V INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 TO-236, SOT-23 CASE 318-09 ISSUE AH SCALE 4:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-01, -02, AND -06 OBSOLETE, NEW STANDARD 318-09. A L 3 1 B 2 V S DIM A B C D G H J K L S V G C H D J K INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0385 0.0498 0.0140 0.0200 0.0670 0.0826 0.0040 0.0098 0.0034 0.0070 0.0180 0.0236 0.0350 0.0401 0.0830 0.0984 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.99 1.26 0.36 0.50 1.70 2.10 0.10 0.25 0.085 0.177 0.45 0.60 0.89 1.02 2.10 2.50 0.45 0.60 SC-59 CASE 318D-04 ISSUE F SCALE 2:1 A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. L 3 S 2 DIM A B C D G H J K L S B 1 D G J C H K http://onsemi.com 1102 MILLIMETERS MIN MAX 2.70 3.10 1.30 1.70 1.00 1.30 0.35 0.50 1.70 2.10 0.013 0.100 0.09 0.18 0.20 0.60 1.25 1.65 2.50 3.00 INCHES MIN MAX 0.1063 0.1220 0.0512 0.0669 0.0394 0.0511 0.0138 0.0196 0.0670 0.0826 0.0005 0.0040 0.0034 0.0070 0.0079 0.0236 0.0493 0.0649 0.0985 0.1181 SOT-223, TO-261AA CASE 318E-04 ISSUE K SCALE 1:1 A F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 4 S 1 2 B 3 D L G J C 0.08 (0003) M H INCHES DIM MIN MAX A 0.249 0.263 B 0.130 0.145 C 0.060 0.068 D 0.024 0.035 F 0.115 0.126 G 0.087 0.094 H 0.0008 0.0040 J 0.009 0.014 K 0.060 0.078 L 0.033 0.041 M 0 10 S 0.264 0.287 MILLIMETERS MIN MAX 6.30 6.70 3.30 3.70 1.50 1.75 0.60 0.89 2.90 3.20 2.20 2.40 0.020 0.100 0.24 0.35 1.50 2.00 0.85 1.05 0 10 6.70 7.30 K SC-74, SC-59 CASE 318F-03 ISSUE F SCALE 2:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318F-01 AND -02 OBSOLETE. NEW STANDARD 318F-03. A L 6 S 1 5 4 2 3 B D G M J C 0.05 (0.002) H K http://onsemi.com 1103 DIM A B C D G H J K L M S INCHES MIN MAX 0.1142 0.1220 0.0512 0.0669 0.0354 0.0433 0.0098 0.0197 0.0335 0.0413 0.0005 0.0040 0.0040 0.0102 0.0079 0.0236 0.0493 0.0649 0 10 0.0985 0.1181 MILLIMETERS MIN MAX 2.90 3.10 1.30 1.70 0.90 1.10 0.25 0.50 0.85 1.05 0.013 0.100 0.10 0.26 0.20 0.60 1.25 1.65 0 10 2.50 3.00 TSOP-6 CASE 318G-02 ISSUE H SCALE 2:1 A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. L 6 S 1 5 4 2 3 B DIM A B C D G H J K L M S D G M J C 0.05 (0.002) K H MILLIMETERS MIN MAX 2.90 3.10 1.30 1.70 0.90 1.10 0.25 0.50 0.85 1.05 0.013 0.100 0.10 0.26 0.20 0.60 1.25 1.55 0 10 2.50 3.00 INCHES MIN MAX 0.1142 0.1220 0.0512 0.0669 0.0354 0.0433 0.0098 0.0197 0.0335 0.0413 0.0005 0.0040 0.0040 0.0102 0.0079 0.0236 0.0493 0.0610 0 10 0.0985 0.1181 SC-70, SOT-323 CASE 419-04 ISSUE L SCALE 4:1 A L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3 B S 1 2 D G C 0.05 (0.002) J N K H http://onsemi.com 1104 DIM A B C D G H J K L N S INCHES MIN MAX 0.071 0.087 0.045 0.053 0.032 0.040 0.012 0.016 0.047 0.055 0.000 0.004 0.004 0.010 0.017 REF 0.026 BSC 0.028 REF 0.079 0.095 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.00 0.30 0.40 1.20 1.40 0.00 0.10 0.10 0.25 0.425 REF 0.650 BSC 0.700 REF 2.00 2.40 SC-88, SOT-363 CASE 419B-02 ISSUE H SCALE 2:1 A G 6 5 4 1 2 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. -B- S D 6 PL 0.2 (0.008) M B DIM A B C D G H J K N S M N INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 J C K H SOD-123 CASE 425-04 ISSUE C SCALE 5:1 A C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. H AAA AAA 1 K DIM A B C D E H J K B E 2 D J http://onsemi.com 1105 INCHES MIN MAX 0.055 0.071 0.100 0.112 0.037 0.053 0.020 0.028 0.01 --0.000 0.004 --0.006 0.140 0.152 STYLE 1: PIN 1. CATHODE 2. ANODE MILLIMETERS MIN MAX 1.40 1.80 2.55 2.85 0.95 1.35 0.50 0.70 0.25 --0.00 0.10 --0.15 3.55 3.85 SOT-416, SC-75, SC-90 CASE 463-01 ISSUE B SCALE 4:1 -A- S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 2 3 D 3 PL 0.20 (0.008) G -B- 1 M B K J DIM A B C D G H J K L S 0.20 (0.008) A C L MILLIMETERS MIN MAX 0.70 0.80 1.40 1.80 0.60 0.90 0.15 0.30 1.00 BSC --0.10 0.10 0.25 1.45 1.75 0.10 0.20 0.50 BSC INCHES MIN MAX 0.028 0.031 0.055 0.071 0.024 0.035 0.006 0.012 0.039 BSC --0.004 0.004 0.010 0.057 0.069 0.004 0.008 0.020 BSC H SOD-323 CASE 477-02 ISSUE B SCALE 4:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. K A D 1 2 B E C J H NOTE 3 http://onsemi.com 1106 DIM A B C D E H J K MILLIMETERS INCHES MIN MAX MIN MAX 1.60 1.80 0.063 0.071 1.15 1.35 0.045 0.053 0.80 1.00 0.031 0.039 0.25 0.40 0.010 0.016 0.15 REF 0.006 REF 0.00 0.10 0.000 0.004 0.089 0.177 0.0035 0.0070 2.30 2.70 0.091 0.106 SC-88A, SOT-353, SC70-5 (5-LEAD) CASE 419A-02 ISSUE F SCALE 2:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419A-01 OBSOLETE. NEW STANDARD 419A-02. A G 5 DIM A B C D G H J K N S 4 -B- S 1 2 3 0.2 (0.008) D 5 PL B M M INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 N J C K H SO-16 CASE 751B-05 ISSUE J SCALE 1:1 -A- 16 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 9 -B- 1 P 8 PL 0.25 (0.010) 8 B M S G R K F X 45 C -T- SEATING PLANE J M D 16 PL 0.25 (0.010) M T B S A S http://onsemi.com 1107 DIM A B C D F G J K M P R MILLIMETERS MIN MAX 9.80 10.00 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.19 0.25 0.10 0.25 0 7 5.80 6.20 0.25 0.50 INCHES MIN MAX 0.386 0.393 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 0 7 0.229 0.244 0.010 0.019 SOT-89 (3-LEAD) CASE 1213-02 ISSUE C SCALE 2:1 -A- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. 1213-01 OBSOLETE, NEW STANDARD 1213-02. C J F -B- L K D 0.10 E G M T B S A S -T- SEATING PLANE 2 PL 0.10 M T B S A S H http://onsemi.com 1108 DIM A B C D E F G H J K L MILLIMETERS MIN MAX 4.40 4.60 2.40 2.60 1.40 1.60 0.37 0.57 0.32 0.52 1.50 1.83 1.50 BSC 3.00 BSC 0.30 0.50 0.80 ----4.25 INCHES MIN MAX 0.173 0.181 0.094 0.102 0.055 0.063 0.015 0.022 0.013 0.020 0.059 0.072 0.059 BSC 0.118 BSC 0.012 0.020 0.031 ----0.167 Surface Mount Package Information The following pages contain information about ON Semiconductor's Surface Mount Pacakages including: * Mimium Recommended Footprint * Power Dissipation * Soldering Precautions * Solder Stencil Guidelines * Typical Solder Heating Profile for the following Surface Mount Packages: * * * * * * * * * * SOT-23 SC-59 SOT-223 TSOP-6 (SC-74) SC-70 (SOT-323) SOT-363 (SC-88) SOD-123 (SC-77) SOT-416 (SC-75, SC-90) SOT-353 (SC-88A) SO-16 http://onsemi.com 1109 INFORMATION FOR USING THE SOT-23 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm SOT-23 SOT-23 POWER DISSIPATION SOLDERING PRECAUTIONS The power dissipation of the SOT-23 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SOT-23 package, PD can be calculated as follows: PD = The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10C. * The soldering temperature and time shall not exceed 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient shall be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. TJ(max) - TA RJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 225 milliwatts. PD = 150C - 25C 556C/W = 225 milliwatts The 556C/W for the SOT-23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT-23 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. http://onsemi.com 1110 INFORMATION FOR USING THE SC-59 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection 0.037 0.95 0.037 0.95 0.098-0.118 2.5-3.0 0.094 2.4 0.039 1.0 0.031 0.8 inches mm SC-59 POWER DISSIPATION The power dissipation of the SC-59 is a function of the pad size. This can vary from the minimum pad size for soldering to the pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient; and the operating temperature, TA. Using the values provided on the data sheet, PD can be calculated as follows. PD = the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 338 milliwatts. PD = 150C - 25C 370C/W = 338 milliwatts The 370C/W assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 338 milliwatts. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, the power dissipation can be doubled using the same footprint. TJ(max) - TA RJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into SOLDERING PRECAUTIONS * The soldering temperature and time should not exceed The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference should be a maximum of 10C. 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient should be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. http://onsemi.com 1111 INFORMATION FOR USING THE SOT-223 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection 0.15 3.8 0.079 2.0 SOT-223 0.091 2.3 0.248 6.3 0.091 2.3 0.079 2.0 0.059 1.5 0.059 1.5 0.059 1.5 mm inches SOT-223 POWER DISSIPATION The power dissipation of the SOT-223 is a function of the pad size. This can vary from the minimum pad size for soldering to the pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient; and the operating temperature, TA. Using the values provided on the data sheet for the SOT-223 package, PD can be calculated as follows. PD = the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 1.5 watts. PD = 150C - 25C 83.3C/W = 1.50 watts The 83.3C/W assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 1.5 watts. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, a higher power dissipation of 1.6 watts can be achieved using the same footprint. TJ(max) - TA RJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into SOLDERING PRECAUTIONS * The soldering temperature and time should not exceed The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference should be a maximum of 10C. 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient should be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. http://onsemi.com 1112 INFORMATION FOR USING THE TSOP-6 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.094 2.4 0.037 0.95 0.074 1.9 0.037 0.95 0.028 0.7 0.039 1.0 inches mm TSOP-6 TSOP-6 POWER DISSIPATION SOLDERING PRECAUTIONS The power dissipation of the TSOP-6 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the TSOP-6 package, PD can be calculated as follows: PD = The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10C. * The soldering temperature and time shall not exceed 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient shall be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. TJ(max) - TA RJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 310 milliwatts. PD = 150C - 25C 403C/W = 310 milliwatts The 403C/W for the TSOP-6 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 310 milliwatts. There are other alternatives to achieving higher power dissipation from the TSOP-6 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. http://onsemi.com 1113 INFORMATION FOR USING THE SC-70/SOT-323 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection 0.025 0.65 0.025 0.65 0.075 1.9 0.035 0.9 0.028 0.7 inches mm SC-70/SOT-323 POWER DISSIPATION The power dissipation of the SC-70/SOT-323 is a function of the pad size. This can vary from the minimum pad size for soldering to the pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient; and the operating temperature, TA. Using the values provided on the data sheet, PD can be calculated as follows. PD = the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 200 milliwatts. PD = 150C - 25C 0.625C/W = 200 milliwatts The 0.625C/W assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 200 milliwatts. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, a higher power dissipation of 300 milliwatts can be achieved using the same footprint. TJ(max) - TA RJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into SOLDERING PRECAUTIONS * The soldering temperature and time should not exceed The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference should be a maximum of 10C. 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient should be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. http://onsemi.com 1114 INFORMATION FOR USING THE SOT-363 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. III III III III III III III III III III III III III III 0.65 mm 0.65 mm 0.4 mm (min) 0.5 mm (min) 1.9 mm SOT-363 SOT-363 POWER DISSIPATION SOLDERING PRECAUTIONS The power dissipation of the SOT-363 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SOT-363 package, PD can be calculated as follows: PD = The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10C. * The soldering temperature and time shall not exceed 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient shall be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. TJ(max) - TA RJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 150 milliwatts. PD = 150C - 25C 833C/W = 150 milliwatts The 833C/W for the SOT-363 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 150 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT-363 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. http://onsemi.com 1115 INFORMATION FOR USING THE SOD-123 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.91 0.036 III III III III III III III III 2.36 0.093 4.19 0.165 1.22 0.048 mm inches SOD-123 SOD-123 POWER DISSIPATION SOLDERING PRECAUTIONS The power dissipation of the SOD-123 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SOD-123 package, PD can be calculated as follows: PD = The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10C. * The soldering temperature and time shall not exceed 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient shall be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. TJ(max) - TA RJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 225 milliwatts. PD = 150C - 25C 556C/W = 225 milliwatts The 556C/W for the SOD-123 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOD-123 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. http://onsemi.com 1116 INFORMATION FOR USING THE SOT-416 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection III III III III III III III III III 0.5 min. (3x) Unit: mm 1 TYPICAL SOLDERING PATTERN 0.5 0.5 min. (3x) 1.4 SOT-416/SC-90 POWER DISSIPATION The power dissipation of the SOT-416/SC-90 is a function of the pad size. This can vary from the minimum pad size for soldering to the pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient; and the operating temperature, TA. Using the values provided on the data sheet, PD can be calculated as follows. PD = the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 125 milliwatts. PD = 150C - 25C 833C/W = 150 milliwatts The 833C/W assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 150 milliwatts. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, a higher power dissipation can be achieved using the same footprint. TJ(max) - TA RJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into SOLDERING PRECAUTIONS * The soldering temperature and time should not exceed The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference should be a maximum of 10C. 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient should be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. http://onsemi.com 1117 INFORMATION FOR USING THE SOT-353/SC-88A SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection III III III III III III III III III III III III 0.65 mm 0.65 mm 0.4 mm (min) 0.5 mm (min) SOT-353 1.9 mm SOT-353/SC-88A POWER DISSIPATION The power dissipation of the SOT-353/SC-88A is a function of the pad size. This can vary from the minimum pad size for soldering to the pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient; and the operating temperature, TA. Using the values provided on the data sheet, PD can be calculated as follows. PD = the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 125 milliwatts. PD = 150C - 25C 833C/W = 150 milliwatts The 833C/W assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 150 milliwatts. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, a higher power dissipation can be achieved using the same footprint. TJ(max) - TA RJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into SOLDERING PRECAUTIONS * The soldering temperature and time should not exceed The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference should be a maximum of 10C. 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient should be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. http://onsemi.com 1118 INFORMATION FOR USING THE SO-16 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.060 1.52 0.275 7.0 0.155 4.0 0.024 0.6 inches mm 0.050 1.270 SO-16 SO-16 POWER DISSIPATION SOLDERING PRECAUTIONS The power dissipation of the SO-16 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SO-16 package, PD can be calculated as follows: PD = The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10C. * The soldering temperature and time shall not exceed 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient shall be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. TJ(max) - TA RJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 1.0 watt. PD = 150C - 25C 125C/W = 1.0 watt The 125C/W for the SO-16 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 1.0 watt. There are other alternatives to achieving higher power dissipation from the SO-16 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. http://onsemi.com 1119 SOLDER STENCIL GUIDELINES The stencil opening size for the surface mounted package should be the same as the pad size on the printed circuit board, i.e., a 1:1 registration. Prior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads. A solder stencil is required to screen the optimum amount of solder paste onto the footprint. The stencil is made of brass or stainless steel with a typical thickness of 0.008 inches. TYPICAL SOLDER HEATING PROFILE The line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. The two profiles are based on a high density and a low density board. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this profile. The type of solder used was 62/36/2 Tin Lead Silver with a melting point between 177-189C. When this type of furnace is used for solder reflow work, the circuit boards and solder joints tend to heat first. The components on the board are then heated by conduction. The circuit board, because it has a large surface area, absorbs the thermal energy more efficiently, then distributes this energy to the components. Because of this effect, the main body of a component may be up to 30 degrees cooler than the adjacent solder joints. For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones, and a figure for belt speed. Taken together, these control settings make up a heating "profile" for that particular circuit board. On machines controlled by a computer, the computer remembers these profiles from one operating session to the next. Figure 7 shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. This profile will vary among soldering systems but it is a good starting point. Factors that can affect the profile include the type of soldering system in use, density and types of components on the board, type of solder used, and the type of board or substrate material being used. This profile shows temperature versus time. STEP 1 PREHEAT ZONE 1 RAMP" 200C 150C STEP 2 STEP 3 VENT HEATING SOAK" ZONES 2 & 5 RAMP" DESIRED CURVE FOR HIGH MASS ASSEMBLIES STEP 5 STEP 4 HEATING HEATING ZONES 3 & 6 ZONES 4 & 7 SPIKE" SOAK" 205 TO 219C PEAK AT SOLDER JOINT 170C 160C 150C 140C 100C 100C 50C STEP 6 STEP 7 VENT COOLING SOLDER IS LIQUID FOR 40 TO 80 SECONDS (DEPENDING ON MASS OF ASSEMBLY) DESIRED CURVE FOR LOW MASS ASSEMBLIES TIME (3 TO 7 MINUTES TOTAL) TMAX Figure 1. Typical Solder Heating Profile http://onsemi.com 1120 CHAPTER 4 Index http://onsemi.com 1121 http://onsemi.com 1122 Subject Index B J Bias Resistor Transistors (BRTs) . . . . . . . . . . . . . . . . . . . 17 JFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Switches and Choppers . . . . . . . . . . . . . . . . . . . . . . . . . 22 Bias Resistor Transistors - Combinational . . . . . . . . . . . 19 JFETs, Small Signal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Bias Resistor Transistors - Duals . . . . . . . . . . . . . . . . . . . 19 Junctional Field-Effect Transistors, Small Signal . . . . . . 21 Bipolar Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Bias Resistor Transistors (BRTs) . . . . . . . . . . . . . . . . . 17 Bias Resistor Transistors - Combinational . . . . . . . . . 19 Bias Resistor Transistors - Duals . . . . . . . . . . . . . . . . 19 Combinational Digital Transistors . . . . . . . . . . . . . . . . . 19 Darlington Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Digital Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Dual Digital Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . 19 General-Purpose Multiple Transistors . . . . . . . . . . . . . 11 General-Purpose Transistors . . . . . . . . . . . . . . . . . . . . . 8 High Current Transistors (> 500 mA) . . . . . . . . . . . . . . 13 High Voltage Transistors (> 100 V) . . . . . . . . . . . . . . . . 14 Low Noise and Good hFE Linearity . . . . . . . . . . . . . . . 11 Low Saturation Voltage Transistors . . . . . . . . . . . . . . . 20 Multiple Switching Transistors . . . . . . . . . . . . . . . . . . . . 16 RF Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Switching Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 L Low Noise and Good hFE Linearity . . . . . . . . . . . . . . . . . 11 Low Saturation Voltage Transistors . . . . . . . . . . . . . . . . . 20 M Multiple Switching Transistors . . . . . . . . . . . . . . . . . . . . . . 16 P Package Cross-Reference Table . . . . . . . . . . . . . . . . . . . . 7 C PIN Switching Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Combinational Digital Transistors . . . . . . . . . . . . . . . . . . . 19 R D RF Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Darlington Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 S Digital Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Dual Digital Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 G General-Purpose Multiple Transistors . . . . . . . . . . . . . . . 11 General-Purpose Signal and Switching Diodes . . . . . . . 25 General-Purpose Transistors . . . . . . . . . . . . . . . . . . . . . . . 8 H SC-59 Bias Resistor Transistors . . . . . . . . . . . . . . . . . . . . . . . . General Purpose Transistors . . . . . . . . . . . . . . . . . . . . . Low Saturation Voltage Transistors . . . . . . . . . . . . . . . RF Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 10 20 15 SC-70 Bias Resistor Transistors . . . . . . . . . . . . . . . . . . . . . . . . High Voltage Transistors . . . . . . . . . . . . . . . . . . . . . . . . RF Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Schottky Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Switching Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 14 15 24 16 SC-74, Low Saturation Voltage Transistors . . . . . . . . . . 20 High Current Transistors (> 500 mA) . . . . . . . . . . . . . . . . 13 High Voltage Transistors (> 100 V) . . . . . . . . . . . . . . . . . . 14 http://onsemi.com 1123 Subject Index S (cont) SOT-416 Bias Resistor Transistors . . . . . . . . . . . . . . . . . . . . . . . . 18 High Current Transistors . . . . . . . . . . . . . . . . . . . . . 13, 20 Switching Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 SC-75 Bias Resistor Transistors . . . . . . . . . . . . . . . . . . . . . . . . 18 General Purpose Transistors . . . . . . . . . . . . . . . . . . . . . 10 High Current Transistors . . . . . . . . . . . . . . . . . . . . . 13, 20 Switching Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Switches and Choppers . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Switching Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Switching Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 SC-88 Bias Resistor Transistors . . . . . . . . . . . . . . . . . . . . . . . . 19 Schottky Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Switching Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 T SC-88A, Bias Resistor Transistors . . . . . . . . . . . . . . . . . . 19 TO-226AA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Bias Resistor Transistors . . . . . . . . . . . . . . . . . . . . . . . . 17 Darlington Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 High Current Transistors . . . . . . . . . . . . . . . . . . . . . . . . 13 High Voltage Transistors . . . . . . . . . . . . . . . . . . . . . . . . 14 JFET Switches and Choppers . . . . . . . . . . . . . . . . . . . . 22 JFETs - High Frequency Amplifiers . . . . . . . . . . . . . . . 21 JFETs - Low Frequency/Low Noise . . . . . . . . . . . . . . . 21 Low Noise and Good hFE Linearity Transistors . . . . . 11 RF Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Switching Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 SC-90 Bias Resistor Transistors . . . . . . . . . . . . . . . . . . . . . . . . 18 General Purpose Transistors . . . . . . . . . . . . . . . . . . . . . 10 High Current Transistors . . . . . . . . . . . . . . . . . . . . . 13, 20 Switching Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 SC70-5, Bias Resistor Transistors . . . . . . . . . . . . . . . . . . 19 Schottky Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Small-Signal Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Bipolar Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Bipolar Trasistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 JFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 JFETs - Junctional Field-Effect Transistors . . . . . . . . 21 Tuning and Switching Diodes . . . . . . . . . . . . . . . . . . . . 23 TO-226AC, Tuning Diodes - Abrupt Junction . . . . . . . . 23 TO-226AC, 2-Lead Schottky Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Tuning Diodes - Abrupt Junction . . . . . . . . . . . . . . . . . 23 TO-226AE (1-WATT) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Darlington Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 High Current Transistors . . . . . . . . . . . . . . . . . . . . . . . . 13 SOD-123, Schottky Diodes . . . . . . . . . . . . . . . . . . . . . . . . 24 SOD-323, Schottky Diodes . . . . . . . . . . . . . . . . . . . . . . . . 24 SOT-223 Darlington Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 High Current Transistors . . . . . . . . . . . . . . . . . . . . . . . . 13 High Voltage Transistors . . . . . . . . . . . . . . . . . . . . . . . . 14 SOT-23 Bias Resistor Transistors . . . . . . . . . . . . . . . . . . . . . . . . Darlington Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . High Current Transistors . . . . . . . . . . . . . . . . . . . . . . . . High Voltage Transistors . . . . . . . . . . . . . . . . . . . . . . . . JFET Switches and Choppers . . . . . . . . . . . . . . . . . . . . JFETs - High Frequency Amplifiers . . . . . . . . . . . . . . . JFETs - Low Frequency/Low Noise . . . . . . . . . . . . . . . Low Saturation Voltage Transistors . . . . . . . . . . . . . . . RF Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Schottky Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Switching Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . Tuning Diodes - Abrupt Junction . . . . . . . . . . . . . . . . . 17 12 13 14 22 21 21 20 15 24 16 23 SOT-323 Bias Resistor Transistors . . . . . . . . . . . . . . . . . . . . . . . . High Voltage Transistors . . . . . . . . . . . . . . . . . . . . . . . . RF Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Schottky Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Switching Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 14 15 24 16 TO-236AB Bias Resistor Transistors . . . . . . . . . . . . . . . . . . . . . . . . 17 Darlington Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 General Purpose Transistors . . . . . . . . . . . . . . . . . . . 9, 11 High Current Transistors . . . . . . . . . . . . . . . . . . . . . . . . 13 High Voltage Transistors . . . . . . . . . . . . . . . . . . . . . . . . 14 JFET Switches and Choppers . . . . . . . . . . . . . . . . . . . . 22 JFETs - High Frequency Amplifiers . . . . . . . . . . . . . . . 21 JFETs - Low Frequency/Low Noise . . . . . . . . . . . . . . . 21 Low Saturation Voltage Transistors . . . . . . . . . . . . . . . 20 RF Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Schottky Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Switching Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Tuning Diodes - Abrupt Junction . . . . . . . . . . . . . . . . . 23 TO-92 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Bias Resistor Transistors . . . . . . . . . . . . . . . . . . . . . . . . 17 Darlington Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 High Current Transistors . . . . . . . . . . . . . . . . . . . . . . . . 13 High Voltage Transistors . . . . . . . . . . . . . . . . . . . . . . . . 14 JFET Switches and Choppers . . . . . . . . . . . . . . . . . . . . 22 JFETs - High Frequency Amplifiers . . . . . . . . . . . . . . . 21 JFETs - Low Frequency/Low Noise . . . . . . . . . . . . . . . 21 Low Noise and Good hFE Linearity Transistors . . . . . 11 RF Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Switching Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Tuning Diodes - Abrupt Junction . . . . . . . . . . . . . . . . . 23 SOT-353, Bias Resistor Transistors . . . . . . . . . . . . . . . . 19 SOT-363 Bias Resistor Transistors . . . . . . . . . . . . . . . . . . . . . . . . 19 Schottky Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Switching Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 http://onsemi.com 1124 Subject Index T (cont) General-Purpose Signal and Switching Diodes . . . . . Schottky Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Switching Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tuning Diodes - Abrupt Junction . . . . . . . . . . . . . . . . . Tuning Diodes - Hyper-Abrupt Junction . . . . . . . . . . . TO-92, 2-Lead Schottky Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Tuning Diodes - Abrupt Junction . . . . . . . . . . . . . . . . . 23 25 24 25 23 23 Tuning Diodes, Abrupt Junction, Small Signal . . . . . . . . 23 TSOP-6, Low Saturation Voltage Transistors . . . . . . . . . 20 Tuning Diodes, Hyper-Abrupt Junction, Small Signal . . 23 Tuning and Switching Diodes . . . . . . . . . . . . . . . . . . . . . . 23 http://onsemi.com 1125 Small-Signal Device Index Device Number Page Device Number Page Device Number Page 2N3903 29 BAT54LT1 24, 150 BC449 8, 213 2N3904 8, 15, 29 BAT54SLT1 24, 153 BC449A 8, 213 2N3906 8, 15, 35 BAT54SWT1 24, 156 BC487 8, 217 2N4401 8, 15, 40 BAT54T1 24, 159 BC487B 8, 217 2N4403 8, 15, 45 BAT54WT1 24, 162 BC488B 8, 222 2N4410 8, 50 BAV199LT1 25, 165 BC489 13, 227 2N5087 8, 11, 55 BAV70LT1 25, 167 BC489A 13, 227 2N5088 8, 11, 61 BAV70TT1 26, 169 BC489B 13, 227 2N5089 8, 11, 61 BAV70WT1 26, 173 BC490 13, 232 2N5401 14, 65 BAV74LT1 25, 176 BC490A 13, 232 2N5457 21, 69 BAV99LT1 25, 178 BC490B 13, 232 2N5458 21, 69 BAV99RWT1 26, 180 BC517 12, 237 2N5460 21, 72 BAV99WT1 26, 180 BC546 8, 242 2N5461 21, 72 BAW56LT1 25, 183 BC546B 8, 242 2N5462 21, 72 BAW56TT1 26, 185 BC547A 8, 242 2N5486 21, 76 BAW56WT1 26, 188 BC547B 8, 242 2N5550 14, 81 BC182 8, 190 BC547C 8, 242 2N5551 14, 81 BC182A 8, 190 BC548B 8, 242 2N5555 22, 85 BC182B 8, 190 BC548C 8, 242 2N5638 22, 90 BC212 8, 193 BC550C 8, 11, 246 2N5639 22, 90 BC212B 8, 193 BC556B 8, 249 2N6426 12, 92 BC213 8, 193 BC557 8, 249 2N6427 12, 92 BC237 8, 196 BC557A 8 2N6515 14, 97 BC237A 8, 196 BC557B 8, 249 2N6517 14, 97 BC237B 8, 196 BC557C 8, 249 2N6520 14, 97 BC237C 8, 196 BC558B 8, 249 2SA1774 10, 103 BC238B 8, 196 BC558C 8, 249 2SC4617 10, 105 BC238C 8, 196 BC559B 255 BAL99LT1 25, 107 BC239C 8, 196 BC559C 255 BAS116LT1 25, 109 BC307B 8, 199 BC560C 8, 11, 255 BAS16HT1 26, 111 BC307C 8, 199 BC618 12, 258 BAS16LT1 25, 113 BC327 8, 202 BC635 13, 263 BAS16TT1 26, 115 BC327-16 8, 202 BC636 13, 266 BAS16WT1 26, 119 BC327-25 8, 202 BC636-16 BAS20HT1 26, 122 BC327-40 8, 202 BC637 13, 263 BAS21HT1 26, 125 BC337 8, 205 BC638 13, 266 BAS21LT1 25, 127 BC337-16 8, 205 BC639 13, 263 BAS21SLT1 25, 129 BC337-25 8, 205 BC639-16 13, 263 BAS40-04LT1 24, 131 BC337-40 8, 205 BC640 13, 266 BAS40-06LT1 24, 133 BC338-25 8, 205 BC640-16 13, 266 BAS40LT1 24, 135 BC368 13, 208 BC807-16LT1 9, 269 BAS70-04LT1 24, 137 BC369 13, 208 BC807-25LT1 9, 269 BAS70LT1 24, 139 BC372 12, 211 BC807-40LT1 9, 269 BAT54ALT1 24, 141 BC373 12, 211 BC817-16LT1 9, 272 BAT54HT1 24, 144 BC447 8, 213 BC817-25LT1 9, 272 http://onsemi.com 1126 266 Small-Signal Device Index Device Number Page Device Number Page BC817-40LT1 9, 272 BC856ALT1 BC846ALT1 9, 275 BC856ALT1 Series 9, 300 BC846ALT1 Series 275 BC856AWT1 BC846ALT3 275 BC856AWT1 Series BC846AWT1 BC846AWT1 Series 10, 279 Page BF493S 14, 349 300 BF720T1 14, 352 10, 305 BF721T1 14, 355 BF959 15, 358 11, 310 BFR30LT1 21, 361 305 BC856BLT1 9, 300 BFR31LT1 21, 361 11, 283 BC856BWT1 10, 305 BSP16T1 14, 364 BC846BLT1 9, 275 BC857ALT1 9, 300 BSP19AT1 14, 366 BC846BLT3 275 11, 310 BSP52T1 12, 368 310 BSS63LT1 9, 370 BC846BDW1T1 279 BC856BDW1T1 Device Number BC857BDW1T1 BC846BPDW1T1 11, 288 BC857BDW1T1 Series BC846BWT1 10, 279 BC857BLT1 9, 300 BSS64LT1 9, 372 BC847ALT1 9, 275 BC857BTT1 10, 315 DA121TT1 26, 374 BC847AWT1 10, 279 BC857BWT1 10, 305 DAN222 26, 378 DAP202U 26, 380 BC847AWT1 Series BC847BDW1T1 BC847BDW1T1 Series BC847BLT1 BC847BPDW1T1 BC847BPDW1T1 Series 279 11, 283 283 BC857BWT1 Series BC857CDW1T1 11, 310 DAP222 26, 380 17, 383 BC857CTT1 10, 315 DTA114E 9, 275 BC857CWT1 10, 305 DTA114E Series 11, 288 BC858ALT1 9, 300 BC858AWT1 10, 305 288 BC847BTT1 10, 296 BC858AWT1 Series BC847BWT1 10, 279 BC858BDW1T1 BC847CDW1T1 11, 283 BC858BDW1T1 Series BC847CLT1 BC847CLT3 305 9, 275 11, 310 310 DTA114EET1 Series 18, 391 390 DTA114T 17, 383 DTA114TET1 18, 391 DTA114Y 17, 383 BC858BLT1 9, 300 DTA114YET1 18, 391 BC858BWT1 10, 305 DTA115EET1 18, 391 BC847CPDW1T1 11, 288 BC858CDW1T1 11, 310 DTA123E 17, 383 BC847CTT1 10, 296 BC858CLT1 9, 300 DTA123EET1 18, 391 BC847CWT1 10, 279 BC859BLT1 9, 300 DTA123JET1 18, 391 BC848ALT1 9, 275 BC859CLT1 9, 300 DTA124E 17, 383 BC848AWT1 10, 279 BCP53-10T1 13, 319 DTA124EET1 18, 391 279 BCP53-16T1 13, 319 DTA124XET1 18, 391 BCP53T1 13, 319 DTA143E 17, 383 DTA143EET1 18, 391 BC848AWT1 Series BC848BDW1T1 BC848BDW1T1 Series BC848BLT1 BC848BLT3 BC848BPDW1T1 BC848BPDW1T1 Series 275 305 DTA114EET1 383 11, 283 283 BCP53T1 Series 319 9, 275 BCP56-10T1 13, 321 DTA143T 17, 383 275 BCP56-16T1 13, 321 DTA143TET1 18, 391 BCP56T1 13, 321 DTA143Z 17, 383 11, 288 DTA143ZET1 18, 391 BC848BWT1 10, 279 BCP68T1 13, 324 DTA144E 17, 383 BC848CDW1T1 11, 283 BCP69T1 13, 327 DTA144EET1 18, 391 BC848CLT1 288 9, 275 BCP56T1 Series 321 BCX56-10R1 13, 329 DTA144TT1 17, 400 BC848CPDW1T1 11, 288 BF245A 21, 332 DTA144WET1 18, 391 BC848CWT1 10, 279 BF245B 21, 332 DTB113E 17, 383 BC849BLT1 9, 275 BF256A 21, 337 DTC114E 17, 402 BC849CLT1 275 BF393 14, 340 DTC114E Series BC850BLT1 9, 275 BF422 14, 343 DTC114EET1 BC850CLT1 9, 275 BF423 14, 346 DTC114EET1 Series http://onsemi.com 1127 402 18, 411 410 Small-Signal Device Index Device Number Page Device Number Page Device Number Page DTC114T 17, 402 MBD101 24, 447 MMBT2132T1 20, 540 DTC114TET1 18, 411 MBD110DWT1 24, 449 MMBT2132T3 540 DTC114Y 17, 402 MBD301 24, 454 MMBT2222ALT1 9, 553 DTC114YET1 18, 411 MBD330DWT1 24, 449 MMBT2222ATT1 10, 543 DTC115EET1 18, 411 MBD54DWT1 24, 456 MMBT2222AWT1 10, 548 DTC123E 17, 402 MBD701 24, 458 MMBT2222LT1 553 DTC123EET1 18, 411 MBD770DWT1 24, 449 MMBT2484LT1 9, 11, 559 DTC123JET1 18, 411 MBT35200MT1 20, 460 MMBT2907ALT1 9, 563 DTC124E 17, 402 MBT3904DW1T1 11, 16, 464 MMBT2907AWT1 10, 567 DTC124EET1 18, 411 MBT3906DW1T1 11, 16, 470 MMBT3640LT1 16, 569 DTC124XET1 18, 411 MBT3946DW1T1 11, 16, 475 MMBT3904LT1 9, 16, 572 DTC143E 17, 402 MMBD101LT1 24, 447 MMBT3904TT1 10, 16, 578 DTC143EET1 18, 411 MMBD2835LT1 25, 485 MMBT3904WT1 10, 16, 584 DTC143T 17, 402 MMBD2836LT1 25, 485 MMBT3906LT1 9, 16, 593 DTC143TET1 18, 411 MMBD2837LT1 25, 487 MMBT3906TT1 10, 16, 598 DTC143Z 17, 402 MMBD2838LT1 25, 487 MMBT3906WT1 10, 16, 584 DTC143ZET1 18, 411 MMBD301LT1 24, 454 MMBT4124LT1 9, 604 DTC144E 17, 402 MMBD330T1 24, 489 MMBT4401LT1 9, 16, 608 DTC144EET1 18, 411 MMBD352LT1 24, 492 MMBT4403LT1 9, 16, 613 DTC144TT1 17, 419 MMBD352WT1 24, 494 MMBT489LT1 DTC144WET1 18, 411 MMBD353LT1 24, 492 MMBT5087LT1 9, 11, 621 DTD113E 17, 402 MMBD354LT1 24, 492 MMBT5088LT1 9, 11, 627 J110 22, 422 MMBD355LT1 24, 492 MMBT5089LT1 9, 11, 627 J111 22, 425 MMBD452LT1 24, 496 MMBT5401LT1 14, 631 J112 22, 425 MMBD6050LT1 25, 498 MMBT5550LT1 635 J113 22, 425 MMBD6100LT1 25, 500 MMBT5551LT1 14, 635 J309 21, 428 MMBD7000LT1 25, 503 MMBT589LT1 20, 639 J310 21, 428 MMBD701LT1 24, 458 MMBT6428LT1 9, 11, 643 LV2205 23, 685 MMBD717LT1 24, 505 MMBT6429LT1 9, 11, 643 LV2209 23, 685 MMBD770T1 24, 489 MMBT6517LT1 14, 647 M1MA141KT1 26, 431 MMBD914LT1 25, 507 MMBT6520LT1 14, 651 M1MA141WAT1 26, 433 MMBF4391LT1 22, 509 MMBT6589T1 20, 655 M1MA141WKT1 26, 435 MMBF4392LT1 22, 509 MMBT918LT1 15, 659 M1MA142KT1 26, 431 MMBF4393LT1 22, 509 MMBTA05LT1 661 M1MA142WAT1 26, 433 MMBF4416LT1 21, 513 MMBTA06LT1 13, 661 M1MA142WKT1 26, 435 MMBF5457LT1 21, 518 MMBTA13LT1 663 M1MA151AT1 26, 437 MMBF5460LT1 21, 521 MMBTA14LT1 12, 663 M1MA151KT1 26, 439 MMBF5484LT1 21, 524 MMBTA42LT1 14, 668 M1MA151WAT1 26, 441 MMBFJ175LT1 22, 529 MMBTA55LT1 671 M1MA151WKT1 26, 443 MMBFJ177LT1 22, 530 MMBTA56LT1 13, 671 M1MA152AT1 26, 437 MMBFJ309LT1 21, 531 MMBTA63LT1 672 M1MA152KT1 26, 439 MMBFJ310LT1 21, 531 MMBTA64LT1 12, 672 M1MA152WAT1 26, 441 MMBFU310LT1 21, 534 MMBTA92LT1 14, 674 M1MA152WKT1 26, 443 MMBT2131T1 20, 537 MMBTH10-4LT1 15, 677 M1MA174T1 26, 445 MMBT2131T3 537 MMBTH10LT1 15, 677 http://onsemi.com 1128 20, 618 Small-Signal Device Index Device Number Page Device Number Page Device Number MMBV105GLT1 23, 681 MMUN2116LT3 735 MMBV109LT1 23, 683 MMUN2130LT1 17, 735 MPS3563 15, 853 MMBV2101LT1 23, 685 MMUN2130LT3 735 MPS3646 15, 801 685 MMUN2131LT1 17, 735 MPS3904 805 MMBV2103LT1 23, 685 MMUN2131LT3 735 MPS4124 8, 811 MMBV2105LT1 23, 685 MMUN2132LT1 17, 735 MPS4126 8, 813 MMBV2107LT1 23, 685 MMUN2132LT3 735 MPS5172 8, 815 MMBV2108LT1 23, 685 MMUN2133LT1 17, 735 MPS5179 15, 820 MMBV2109LT1 23, 685 MMUN2133LT3 735 MPS650 822 MMBV3102LT1 23, 688 MMUN2134LT1 17, 735 MPS651 13, 822 MMBV3401LT1 25, 690 MMUN2134LT3 735 MPS6521 8, 11, 826 MMBV3700LT1 25, 692 MMUN2211LT1 17, 741 MPS6523 8, 11, 826 MMBV409LT1 23, 694 MMUN2211LT1 Series 741 MPS6601 837 MMBV432LT1 23, 696 MMUN2212LT1 17, 741 MPS6602 8, 837 MMBV609LT1 23, 698 MMUN2213LT1 17, 741 MPS6651 837 MMBV809LT1 23, 700 MMUN2214LT1 17, 741 MPS6652 8, 837 MMDL101T1 24, 702 MMUN2215LT1 17, 741 MPS6729 8, 9, 843 MMDL301T1 24, 704 MMUN2216LT1 17, 741 MPS750 822 MMDL6050T1 26, 706 MMUN2230LT1 17, 741 MPS751 13, 822 MMDL770T1 24, 708 MMUN2231LT1 17, 741 MPS8098 847 MMDL914T1 26, 710 MMUN2232LT1 17, 741 MPS8099 8, 847 MMPQ2222A 11, 712 MMUN2233LT1 17, 741 MPS8598 847 11, 16, 714 MMUN2234LT1 17, 741 MPS8599 8, 847 MMPQ3467 11, 716 MMUN2235LT1 17, 741 MPS918 15, 853 MMPQ3904 11, 16, 718 MMUN2238LT1 17, 741 MPSA05 8, 855 MMPQ3906 11, 16, 720 MMUN2241LT1 17, 741 MPSA06 8, 855 MMPQ6700 11, 16, 722 MMVL105GT1 23, 751 MPSA13 12, 860 MMBV2101LT1 Series MMPQ2369 MPS2907A Page 8, 796 MMSD103T1 26, 723 MMVL109T1 23, 753 MPSA14 12, 860 MMSD301T1 24, 725 MMVL2101T1 23, 755 MPSA18 8, 11, 865 MMSD4148T1 26, 728 MMVL2105T1 23, 758 MPSA20 8, 869 MMSD701T1 24, 725 MMVL3102T1 23, 761 MPSA27 12, 875 MMSD71RKT1 26, 730 MMVL3401T1 25, 763 MPSA28 878 MMSD914T1 26, 732 MMVL3700T1 25, 765 MPSA29 12, 878 MMUN2111LT1 17, 735 MMVL409T1 23, 767 MPSA42 14, 881 734 MMVL809T1 23, 769 MPSA43 881 MMUN2111LT3 735 MPF102 21, 771 MPSA55 8, 855 MMUN2112LT1 17, 735 MPF4392 22, 776 MPSA56 8, 855 MMUN2112LT3 735 MPF4393 22, 776 MPSA62 884 MMUN2113LT1 17, 735 MPF4856 22, 781 MPSA63 12, 884 MMUN2113LT3 735 MPN3404 25, 785 MPSA64 12, 884 MMUN2114LT1 17, 735 MPN3700 25, 692 MPSA75 12, 887 MMUN2114LT3 735 MPS2222 8, 787 MPSA77 12, 887 MMUN2115LT1 17, 735 MPS2222A 8, 787 MPSA92 14, 889 MPS2369 15, 793 MPSA93 889 MPS2369A 15, 793 MPSH10 15, 892 MMUN2111LT1 Series MMUN2115LT3 735 MMUN2116LT1 17, 735 http://onsemi.com 1129 Small-Signal Device Index Device Number Page Device Number Page Device Number Page MPSH17 15, 894 MUN2115T1 17, 957 MUN5132DW1T1 19, 979 MPSL51 8, 896 MUN2116T1 17, 957 MUN5132T1 18, 989 MPSW01 13, 900 MUN2130T1 17, 957 MUN5133DW1T1 19, 979 MPSW01A 13, 900 MUN2131T1 17, 957 MUN5133T1 18, 989 9, 903 MUN2132T1 17, 957 MUN5134DW1T1 19, 979 MPSW06 9, 903 MUN2133T1 17, 957 MUN5134T1 18, 989 MPSW13 12, 906 MUN2134T1 17, 957 MUN5135DW1T1 19, 979 MPSW14 12, 906 MUN2136T1 17, 957 MUN5135T1 18, 989 MPSW42 14, 909 MUN2137T1 17, 957 MUN5136DW1T1 19, 979 MPSW45 12, 912 MUN2140T1 17, 957 MUN5136T1 18, 989 MPSW45A 12, 912 MUN2211T1 17, 968 MUN5137DW1T1 19, 979 MPSW51 13, 917 MUN2211T1 Series MUN5137T1 18, 989 MPSW51A 19, 999 MPSW05 967 13, 917 MUN2212T1 17, 968 MUN5211DW1T1 MPSW55 9, 920 MUN2213T1 17, 968 MUN5211DW1T1 Series MPSW56 9, 920 MUN2214T1 17, 968 MUN5211T1 MPSW63 12, 923 MUN2215T1 17, 968 MUN5211T1 Series MPSW64 12, 923 MUN2216T1 17, 968 MUN5212DW1T1 MPSW92 14, 926 MUN2230T1 17, 968 MUN5212T1 MSA1162GT1 10, 929 MUN2231T1 17, 968 MUN5213DW1T1 MSA1162YT1 10, 929 MUN2232T1 17, 968 MUN5213T1 MSB1218A-RT1 10, 930 MUN2233T1 17, 968 MUN5214DW1T1 MSB709-RT1 10, 933 MUN2234T1 17, 968 MUN5214T1 MSB710-RT1 10, 934 MUN2236T1 17, 968 MUN5215DW1T1 MSB92AWT1 14, 935 MUN2237T1 17, 968 MUN5215T1 MSB92WT1 14, 935 MUN2240T1 17, 968 MUN5216DW1T1 MSC2295-BT1 15, 937 MUN2241T1 17, 968 MUN5216T1 MSC2295-CT1 15, 937 MUN5111DW1T1 MSC2712GT1 10, 938 MUN5111DW1T1 Series MSC3130T1 15, 939 MUN5111T1 MSC3930-BT1 10, 940 MUN5111T1 Series MSD1328-RT1 10, 941 MUN5112DW1T1 19, 979 MUN5232DW1T1 MSD1328-ST1 10, 941 MUN5112T1 18, 989 MUN5232T1 MSD1819A-RT1 10, 942 MUN5113DW1T1 19, 979 MUN5233DW1T1 MSD2714AT1 15, 945 MUN5113T1 18, 989 MUN5233T1 MSD42WT1 14, 949 MUN5113T3 989 MSD601-RT1 10, 950 MUN5114DW1T1 19, 979 MUN5234T1 MSD601-ST1 10, 950 MUN5114T1 18, 989 MUN5235DW1T1 MSD602-RT1 10, 951 MUN5115DW1T1 19, 979 MUN5235T1 MSD6100 25, 952 MUN5115T1 18, 989 MUN5236DW1T1 MSD6150 25, 954 MUN5116DW1T1 19, 979 MUN5236T1 MUN2111T1 17, 957 MUN5116T1 18, 989 MUN5237DW1T1 MUN5130DW1T1 19, 979 MUN5237T1 18, 1007 19, 1016 MUN2111T1 Series 956, 19, 978, 979 978 18, 989 988 MUN5230DW1T1 MUN5230T1 MUN5231DW1T1 MUN5231T1 MUN5234DW1T1 MUN2112T1 17, 957 MUN5130T1 18, 989 MUN5311DW1T1 MUN2113T1 17, 957 MUN5131DW1T1 19, 979 MUN5311DW1T1 Series MUN2114T1 17, 957 MUN5131T1 18, 989 MUN5312DW1T1 http://onsemi.com 1130 998 18, 1007 1006 19, 999 18, 1007 19, 999 18, 1007 19, 999 18, 1007 19, 999 18, 1007 19, 999 18, 1007 19, 999 18, 1007 19, 999 18, 1007 19, 999 18, 1007 19, 999 18, 1007 19, 999 18, 1007 19, 999 18, 1007 19, 999 18, 1007 19, 999 1015 19, 1016 Small-Signal Device Index Device Number Page Device Number Page Device Number Page MUN5313DW1T1 19, 1016 MV2101 23, 685 PZT651T1 13, 1064 MUN5314DW1T1 19, 1016 MV2105 23, 685 PZT751T1 13, 1066 MUN5315DW1T1 19, 1016 MV2109 23, 685 PZTA42T1 14, 1068 MUN5316DW1T1 19, 1016 NSF2250WT1 15, 1030 PZTA92T1 14, 1071, MUN5330DW1T1 19, 1016 NSL12TT1 13, 20, 1039 PZTA96ST1 MUN5331DW1T1 19, 1016 NSL35TT1 13, 20, 1043 RB751V40T1 24, 1074 MUN5332DW1T1 19, 1016 NSL5TT1 13, 1047 UMA4NT1 19, 1077 MUN5333DW1T1 19, 1016 P2N2222A 15, 1049 UMA6NT1 19, 1077 MUN5334DW1T1 19, 1016 P2N2907A 15, 1054 UMC2NT1 19, 1081 MUN5335DW1T1 19, 1016 PZT2222AT1 13, 1058 UMC3NT1 19, 1081 MV104 23, 1028 PZT2907AT1 13, 1061 UMC5NT1 19, 1081 MV209 23, 683 http://onsemi.com 1131 1073 ON SEMICONDUCTOR MAJOR WORLDWIDE SALES OFFICES AND REPRESENTATIVES UNITED STATES UNITED STATES (continued) UTAH ALABAMA Huntsville . . . . . . . . . . . . . . . . . . . 256-774-1000 CALIFORNIA Encino . . . . . . . . . . . . . . . . . . . . . . Irvine . . . . . . . . . . . . . . . . . . . . . . . Sacramento (Sales Rep) . . . . . . . San Diego . . . . . . . . . . . . . . . . . . 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