TBD62502A series, TBD62503A series
2015-07-24
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©2015 Toshiba Corpor ation
TOSHIBA BiCD Integrated Circu it Silicon Monolithic
TBD62502APG, TBD62502AFG, TB D6 2 502AFNG, TBD62502AFWG
TBD62503APG, TBD62503AFG, TB D6 2 50 3AFNG, TBD62 5 03AFWG
7channel sink type DMOS transistor array
TBD62502A series and TBD62503A series are DMOS
transistor array with 7 circuits. Please be careful about thermal
conditions during use.
Features
7 circuits built-in
High voltage : VOUT = 50 V (MAX)
High current : IOUT = 300 mA/ch (MAX)
Input voltage(output on) : TBD62502A series 14 V (MIN)
TBD62503A series 2.5 V (MIN)
Input voltage(output off) : TBD62502A series 7.0 V (MAX)
TBD62503A series 0.6 V (MAX)
Package : PG type DIP16-P-300-2.54A
FG type SOP16-P-225-1.27
FNG type SSOP16-P-225-0.65B
FWG type P-SOP16-0410-1.27-002
Pin connection (top view)
Pin connection may be simpl ified for explanator y purpose.
TBD62502APG,TBD62503APG
DIP16-P-300-2.54A
TBD62502AFG,TBD62503AFG
SOP16-P-225-1.27
TBD62502AFNG,TBD62503AFNG
SSOP16-P-225-0.65B
TBD62502AFWG,TBD62503AFWG
P-SOP16-0410-1.27-002
Weight
DIP1
6-P-300-2.54A : 1.11g (Typ.)
SOP1
6-P-225-1.27 : 0.16g (Typ.)
S
SOP16-P-225-0.65B : 0.07g (Typ.)
P-SOP16-0410-1.27-002 : 0.15g (Typ.)
1
2
3
4
5
6
7
8
16
15
14
13
12
11
O1
O2
O3
O4
O5
O6
O7
I1 I2 I3 I4 I5 I6 I7 GND
10
9
TBD62502A series, TBD62503A series
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©2015 Toshiba Corpor ation
Pin explanati ons
Pin No. Pin name Function
1
I1
Input pin
2
I2
Input pin
3
I3
Input pin
4
I4
Input pin
5
I5
Input pin
6
I6
Input pin
7
I7
Input pin
8
GND
GND pin
9
NC
Non-connection pin
10
O7
Output pin
11
O6
Output pin
12
O5
Output pin
13
O4
Output pin
14
O3
Output pin
15
O2
Output pin
16
O1
Output pin
Equivalent circuit (each driver)
Equivalent circuit may be simplif ied for explanatory purpose.
Clamp
INPUT
OUTPUT
TBD62502A series, TBD62503A series
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©2015 Toshiba Corpor ation
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Output voltage
V
OUT
50
V
Output cur r ent
I
OUT
300
mA/ch
Input v oltage
V
IN
0.5 to 30
V
Power
dissipation
PG (Note 1)
PD
1.47
W
FG (Note 2)
0.625
FNG (Note 3)
0.78
FWG (Not e 4)
1.25
Operatin g t emperature
T
opr
40 to 85
°C
Storage t em per at ur e
T
stg
55 to 150
°C
Note 1: Device a lone. When Ta exceeds 2 C, it is necess ar y to do the derating with 11.8 m W/°C.
Note 2: On PCB (Size: 30 mm × 30 mm × 1.6 mm, Cu area : 50%, single-side glass epoxy ).
When Ta excee ds 25°C, it is necessary to do the der at ing wit h 5 mW/°C.
Note 3: On PCB (Size: 50 mm × 50 mm × 1.6 mm, Cu area : 40%, single-side glass epoxy).
When Ta excee ds 25°C, it is necessary to do the der at ing wit h 6.24 mW/°C.
Note 4: On PCB (J E DEC 2s2p).
When Ta excee ds 25°C, it is necessary to do the der at ing wit h 10 mW/°C.
TBD62502A series, TBD62503A series
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©2015 Toshiba Corpor ation
Operating Ranges (Ta = 40 to 85 °C)
Characteristics Symbol
Condition Min Typ. Max Unit
Output voltage
V
OUT
50
V
Output
current
PG(Note 1)
IOUT
1 circuits ON, Ta = 25 °C
0
250
mA/ch
tpw = 25 ms
7 circuits ON
Ta = 85 °C
Tj = 120 °C
Duty = 10 %
0
250
Duty = 50 % 0 190
FG(Note 2)
1 circuits ON, Ta = 25 °C 0 250
tpw = 25 ms
7 circuits ON
Ta = 85 °C
Tj = 120 °C
Duty = 10 %
0
250
Duty = 50 % 0 120
FNG(Note 3)
1 circuits ON, Ta = 25 °C 0 250
tpw = 25 ms
7 circuits ON
Ta = 85 °C
Tj = 120 °C
Duty = 10 %
0
250
Duty = 50 % 0 130
FWG(Note 4)
1 circuits ON, Ta = 25 °C 0 250
tpw = 25 ms
7 circuits ON
Ta = 85 °C
Tj = 120 °C
Duty = 10 %
0
250
Duty = 50 % 0 170
Input v oltage
(Output on)
TBD62502A
series VIN
(ON)
IOUT = 100 mA or upper , VOUT = 2 V
14 25 V
TBD62503A
series IOUT = 100 mA or upper, VOUT = 2 V
2.5 25
Input v oltage
(Output off)
TBD62502A
series VIN
(OFF)
IOUT = 100 μA or less, VOUT = 2 V 0 7.0 V
TBD62503A
series IOUT = 100 μA or less, VOUT = 2 V 0 0.6
Note 1: Device a lone.
Note 2: On PCB (Size: 30 mm × 30 mm × 1.6 mm, Cu area : 50%, single-side glass epoxy ).
Note 3: On PCB (Size: 50 mm × 50 mm × 1.6 mm, Cu area : 40%, single-side glass epoxy).
Note 4: On PCB (J E DEC 2s2p).
TBD62502A series, TBD62503A series
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©2015 Toshiba Corpor ation
Electrical Characteristics (Ta = 25 °C unless otherwise noted)
Characteristics Symbol
Test
Circuit
Condition Min Typ. Max Unit
Output lea kage current Ileak 1
V
OUT
= 50V, T a = 85 °C
VIN = 0 V 1.0 μA
Output voltage
(Output
ON-resistance)
TBD62502A
series
VDS
(RON) 2
IOUT = 200 mA, VIN =14 V 0.4
(2.0) 0.65
(3.25)
V
(Ω)
IOUT = 100 mA, VIN =14 V 0.2
(2.0) 0.325
(3.25)
TBD62503A
series
IOUT = 200 mA, VIN =5.0 V 0.4
(2.0) 0.65
(3.25)
IOUT = 100 mA, VIN =5.0 V 0.2
(2.0) 0.325
(3.25)
Input current
(Output on)
TBD62502A
series IIN
(ON) 3 VIN = 14 V 1.0 mA
TBD62503A
series VIN = 2.5 V 0.1
Input current(Output off)
I
IN
(OFF) 4 VIN = 0 V, Ta = 85°C 1.0 μA
Input v oltage
(Output on)
TBD62502A
series VIN
(ON) 5 IOUT = 100 mA, VOUT = 2 V
14 V
TBD62503A
series 2.5
Turnon delay
t
ON
6 VOUT = 50 V
RL = 200 Ω
CL = 15 pF
0.4
μs
Turnoff delay tOFF 0.8
TBD62502A series, TBD62503A series
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©2015 Toshiba Corpor ation
Test circuit
1. Ileak 2. VDS (RON)
3. IIN (ON) 4. IIN (OFF)
5. VIN (ON)
Test circuit may be simpli fied for expla nat or y purpose.
OUTPUT
INPUT
GND
VOUT
OUTPUT
INPUT
GND
IOUT
VIN
VDS
RON = VDS / IOUT
Ileak
INPUT
GND
VIN
IIN(ON)
INPUT
GND
IIN(OFF)
OUTPUT
INPUT
GND
IOUT
VIN(ON)
VOUT
OUTPUT
OUTPUT
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6. tON, tOFF
Note 1: Pul se width 50 μs, Duty cycle 10%
Output i mpe dance 50 Ω, tr 5 ns, tf 10 ns
Please refer t o t he followi ng table for the VIH condition.
Product
VIH
TBD62502A series
14.0 V
TBD62503A series
5.0 V
Note 2: CL includes the pr obe and the test board capacitance.
Test circuit an d timing chart may be simp lified for expla nat or y purpose.
Precautions for Us i ng
This IC does not include built-in protection circuits for ex cess cur rent or overvoltage.
If this IC is sub ject ed to excess cur r ent or overvoltage, it may be dest r oyed.
Hence, the utmost care m ust be ta ken when systems which incorporate th is I C are designed.
Utmost care is necessar y in the design o f the output line, COM M ON and GND line since I C may be
destroy ed due t o shortcircuit between outputs, air contamination fault, or fault by improper grounding.
(2)
(1) (Note 2)
(Note 1)
TBD62502A series, TBD62503A series
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©2015 Toshiba Corpor ation
Package Dimensions
DIP16-P-300-2.54A Unit: mm
Weight: 1.11 g (Typ.)
SOP16-P-225-1.27 Unit: mm
Weight: 0.16 g (Typ.)
TBD62502A series, TBD62503A series
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©2015 Toshiba Corpor ation
SSOP16-P-225-0.65B Unit: mm
Weight: 0.07 g (Typ.)
P-SOP16-0410-1.27-002 Unit: mm
Weight: 0.15 g (Typ.)
TBD62502A series, TBD62503A series
2015-07-24
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©2015 Toshiba Corpor ation
Notes on Contents
1. Pin connection
Pin connect i on may be simplified for explanatory purpose.
2. Equivalent Circuits
Equivalent circuit may be simplif ied for explanatory purpose.
3. Test circuit
Test circuit may be simpli fied for expla nat or y purpose.
4. Timing chart
Timing charts may be si m plif ied for explanator y purposes.
IC Usage Considerations
Notes on handling of ICs
(1) The absolute maximum ratings of a semiconductor device are a set of ratings that must not be exceeded, even for
a moment. Do not exceed any of these ratings.Exceeding the rating(s) may cause device breakdown, damage or
deterioration, and may result in injury by explosion or combustion.
(2) Do not insert devices in the wrong orientation or incorrectly.Make sure that the positive and negative terminals
of power supplies are connected properly.Otherwise, the current or power consumption may exceed the absolute
maximum rating, and exceeding the rating(s) may cause device breakdown, damage or deterioration, and may
result in injury by explosion or combustion.In addition, do not use any device inserted in the wrong orientation
or incorrectly to which current is applied even just once.
(3) Use an appropriate power supply fuse to ensure that a large current does not continuously flow in the case of
overcurrent and/or IC failure. The IC will fully break down when used under conditions that exceed its absolute
maximum ratings, when the wiring is routed improperly or when an abnormal pulse noise occurs from the
wiring or load, causing a large current to continuously flow and the breakdown can lead to smoke or ignition. To
minimize the effects of the flow of a large current in the case of breakdown, appropriate settings, such as fuse
capacity, fusing time and insertion circuit location, are required.
(4) If your design includes an inductive load such as a motor coil, incorporate a protection circuit into the design to
prevent device malfunction or breakdown caused by the current resulting from the inrush current at power ON
or the negative current resulting from the back electromotive force at power OFF. IC breakdown may cause
injury, smoke or ignition.Use a stable power supply with ICs with built-in protection functions. If the power
supply is unstable, the protection function may not operate, causing IC breakdown. IC breakdown may cause
injury, smoke or ignition.
(5) Carefully select external components (such as inputs and negative feedback capacitors) and load components
(such as speakers), for example, power amp and regulator.If there is a large amount of leakage current such as
from input or negative feedback condenser, the IC output DC voltage will increase. If this output voltage is
connected to a speaker with low input withstand voltage, overcurrent or IC failure may cause smoke or ignition.
(The overcurrent may cause smoke or ignition from the IC itself.) In particular, please pay attention when using
a Bridge Tied Load (BTL) connection-type IC that inputs output DC voltage to a speaker directly.
Points to reme m ber on handling of ICs
Heat Radiation Design
When using an IC with large current flow such as power amp, regulator or driver, design the device so that heat is
appropriately radiated, in order not to exceed the specified junction temperature (TJ ) at any time or under any condition.
These ICs generate heat even during normal use. An inadequate IC heat radiation design can lead to decrease in IC life,
deterioration of IC characteristics or IC breakdown. In addition, when designing the device, take into consideration the
effect of IC heat radiation with peripheral components.
Back-EMF
When a motor rotates in the reverse direction, stops or slows abruptly, current flows back to the motor’s power supply
owing to the effect of back-EMF. If the current sink capability of the power supply is small, the device’s motor power
supply and output pins might be exposed to conditions beyond the absolute maximum ratings. To avoid this problem, take
the effect of back-EMF into consideration in system design.
TBD62502A series, TBD62503A series
2015-07-24
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©2015 Toshiba Corpor ation
RESTRICTIONS ON PRODUCT USE
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