Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008. Therefore, please accept that although the terms and marks of "Oki Electric Industry Co., Ltd.", "Oki Electric", and "OKI" remain in the documents, they all have been changed to "OKI Semiconductor Co., Ltd.". It is a change of the company name, the company trademark, and the logo, etc. , and NOT a content change in documents. October 1, 2008 OKI Semiconductor Co., Ltd. 550-1 Higashiasakawa-cho, Hachioji-shi, Tokyo 193-8550, Japan http://www.okisemi.com/en/ E2G0135-18-11 Semiconductor MD51V64400 Semiconductor This version:MD51V64400 Mar. 1998 16,777,216-Word 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MD51V64400 is a 16,777,216-word 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MD51V64400 achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal CMOS process. The MD51V64400 is available in a 32-pin plastic SOJ or 32-pin plastic TSOP. FEATURES * 16,777,216-word 4-bit configuration * Single 3.3 V power supply, 0.3 V tolerance * Input : LVTTL compatible, low input capacitance * Output : LVTTL compatible, 3-state * Refresh : RAS-only refresh : 8192 cycles/64 ms CAS before RAS refresh, hidden refresh : 4096 cycles/64 ms * Fast page mode, read modify write capability * CAS before RAS refresh, hidden refresh, RAS-only refresh capability * Package options: 32-pin 400 mil plastic SOJ (SOJ32-P-400-1.27) (Product : MD51V64400-xxJA) 32-pin 400 mil plastic TSOP (TSOPII32-P-400-1.27-K) (Product : MD51V64400-xxTA) xx indicates speed rank. PRODUCT FAMILY Family Access Time (Max.) tRAC tAA tCAC tOEA Cycle Time Power Dissipation (Min.) Operating (Max.) Standby (Max.) MD51V64400-50 50 ns 25 ns 13 ns 13 ns 90 ns 504 mW MD51V64400-60 60 ns 30 ns 15 ns 15 ns 110 ns 432 mW 1.8 mW 1/15 Semiconductor MD51V64400 PIN CONFIGURATION (TOP VIEW) VCC 1 32 VSS VCC 1 32 VSS DQ1 2 31 DQ4 DQ1 2 31 DQ4 DQ2 3 30 DQ3 DQ2 3 30 DQ3 NC 4 29 NC NC 4 29 NC NC 5 28 NC NC 5 28 NC NC 6 27 NC NC 6 27 NC NC 7 26 CAS NC 7 26 CAS WE 8 25 OE WE 8 25 OE RAS 9 24 A12R RAS 9 24 A12R A0 10 23 A11R A0 10 23 A11R A1 11 22 A10 A1 11 22 A10 A2 12 21 A9 A2 12 21 A9 A3 13 20 A8 A3 13 20 A8 A4 14 19 A7 A4 14 19 A7 A5 15 18 A6 A5 15 18 A6 VCC 16 17 VSS VCC 16 17 VSS 32-Pin Plastic SOJ Pin Name A0 - A10, A11R, A12R Note : 32-Pin Plastic TSOP (K Type) Function Address Input RAS Row Address Strobe CAS Column Address Strobe DQ1 - DQ4 Data Input/Data Output OE Output Enable WE Write Enable VCC Power Supply (3.3 V) VSS Ground (0 V) NC No Connection The same power supply voltage must be provided to every VCC pin, and the same GND voltage level must be provided to every VSS pin. 2/15 Semiconductor MD51V64400 BLOCK DIAGRAM WE RAS OE Timing Generator I/O Controller CAS 4 Output Buffers 4 Input Buffers 4 DQ1 - DQ4 11 Internal Address Counter A0 - A10 11 A11R, A12R Column Address Buffers 2 11 Refresh Control Clock Row Row Address 13 DecoBuffers ders Word Drivers Column Decoders Sense Amplifiers 4 I/O Selector 4 4 Memory Cells VCC On Chip VBB Generator On Chip IVCC Generator VSS 3/15 Semiconductor MD51V64400 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Parameter Symbol Rating Unit VT -0.5 to 4.6 V Short Circuit Output Current IOS 50 mA Power Dissipation PD* 1 W Operating Temperature Topr 0 to 70 C Storage Temperature Tstg -55 to 150 C Voltage on Any Pin Relative to VSS *: Ta = 25C Recommended Operating Conditions Parameter Power Supply Voltage (Ta = 0C to 70C) Symbol Min. Typ. Max. Unit VCC 3.0 3.3 3.6 V VSS 0 0 0 V Input High Voltage VIH 2.0 -- VCC + 0.3 V Input Low Voltage VIL -0.3 -- 0.8 V Capacitance (VCC = 3.3 V 0.3 V, Ta = 25C, f = 1 MHz) Symbol Typ. Max. Unit Input Capacitance (A0 - A10, A11R, A12R) Parameter CIN1 -- 5 pF Input Capacitance (RAS, CAS, WE, OE) CIN2 -- 7 pF Output Capacitance (DQ1 - DQ4) CI/O -- 7 pF 4/15 Semiconductor MD51V64400 DC Characteristics Parameter (VCC = 3.3 V 0.3 V, Ta = 0C to 70C) Symbol Condition MD51V64400 -50 MD51V64400 -60 Min. Max. Min. Max. Unit Note Output High Voltage VOH IOH = -2.0 mA 2.4 VCC 2.4 VCC V Output Low Voltage VOL IOL = 2.0 mA 0 0.4 0 0.4 V Input Leakage Current ILI -10 10 -10 10 mA -10 10 -10 10 mA -- 100 -- 90 mA 1, 2 -- 1 -- 1 -- 0.5 -- 0.5 -- 100 -- 90 mA 1, 2 -- 5 -- 5 mA -- 140 -- 120 mA 1, 2 -- 80 -- 70 mA 1, 3 0 V VI VCC + 0.3 V; All other pins not under test = 0 V Output Leakage Current ILO Average Power Supply Current ICC1 (Operating) Power Supply Current (Standby) Current (Standby) (CAS before RAS Refresh) Average Power Supply Current (Fast Page Mode) tRC = Min. VCC -0.2 V mA 1 RAS cycling, ICC3 CAS = VIH, tRC = Min. RAS = VIH, ICC5 CAS = VIL, 1 DQ = enable Average Power Supply Current RAS, CAS cycling, ICC2 RAS, CAS (RAS-only Refresh) Power Supply 0 V VO VCC RAS, CAS = VIH Average Power Supply Current DQ disable ICC6 RAS cycling, CAS before RAS RAS = VIL, ICC7 CAS cycling, tPC = Min. Notes : 1. ICC Max. is specified as ICC for output open condition. 2. The address can be changed once or less while RAS = VIL. 3. The address can be changed once or less while CAS = VIH. 5/15 Semiconductor MD51V64400 AC Characteristics (1/2) (VCC = 3.3 V 0.3 V, Ta = 0C to 70C) Note 1, 2, 3 Parameter Symbol MD51V64400 -50 MD51V64400 -60 Unit Note Min. Max. Min. Max. tRC tRWC tPC 90 131 35 -- 110 155 40 -- -- -- ns ns ns tPRWC 76 -- 85 -- ns tRAC -- 50 -- 60 ns 4, 5, 6 Access Time from CAS tCAC -- 13 -- 15 ns 4, 5 Access Time from Column Address Access Time from CAS Precharge tAA tCPA -- -- 25 30 -- -- 30 35 ns ns 4, 6 4 Access Time from OE Output Low Impedance Time from CAS tOEA tCLZ -- 0 13 -- -- 0 15 -- ns ns 4 4 CAS to Data Output Buffer Turn-off Delay Time OE to Data Output Buffer Turn-off Delay Time Transition Time Refresh Period tOFF tOEZ tT tREF 0 0 3 -- 13 13 50 64 0 0 3 -- 15 15 50 64 ns ns ns ms 7 3 RAS Precharge Time tRP 30 -- 40 -- ns RAS Pulse Width tRAS 50 10,000 60 10,000 ns RAS Pulse Width (Fast Page Mode) tRASP 50 100,000 60 100,000 ns RAS Hold Time RAS Hold Time referenced to OE tRSH tROH 13 13 -- -- 15 15 -- -- ns ns CAS Precharge Time (Fast Page Mode) tCP 7 -- 10 -- ns CAS Pulse Width tCAS 13 10,000 15 10,000 ns CAS Hold Time CAS to RAS Precharge Time tCSH tCRP 50 5 -- -- 60 5 -- -- ns ns RAS Hold Time from CAS Precharge tRHCP 30 -- 35 -- ns RAS to CAS Delay Time RAS to Column Address Delay Time tRCD tRAD 17 12 37 25 20 15 45 30 ns ns Row Address Set-up Time tASR 0 -- 0 -- ns Row Address Hold Time tRAH 7 -- 10 -- ns Column Address Set-up Time tASC 0 -- 0 -- ns Column Address Hold Time Column Address to RAS Lead Time tCAH tRAL 7 25 -- -- 10 30 -- -- ns ns Read Command Set-up Time tRCS 0 -- 0 -- ns Read Command Hold Time Read Command Hold Time referenced to RAS tRCH tRRH 0 0 -- -- 0 0 -- -- ns ns Random Read or Write Cycle Time Read Modify Write Cycle Time Fast Page Mode Cycle Time Fast Page Mode Read Modify Write Cycle Time Access Time from RAS -- -- 7 5 6 8 8 6/15 Semiconductor MD51V64400 AC Characteristics (2/2) (VCC = 3.3 V 0.3 V, Ta = 0C to 70C) Note 1, 2, 3 Parameter Symbol MD51V64400 -50 MD51V64400 -60 Min. Max. Min. Max. Unit Note 9 Write Command Set-up Time tWCS 0 -- 0 -- ns Write Command Hold Time tWCH 7 -- 10 -- ns Write Command Pulse Width tWP 7 -- 10 -- ns OE Command Hold Time tOEH 13 -- 15 -- ns Write Command to RAS Lead Time tRWL tCWL -- -- 15 Write Command to CAS Lead Time 13 13 -- -- ns ns Data-in Set-up Time Data-in Hold Time OE to Data-in Delay Time CAS to WE Delay Time Column Address to WE Delay Time RAS to WE Delay Time tDS tDH tOED tCWD tAWD tRWD 0 7 13 36 48 73 -- -- -- -- -- -- 0 10 15 40 55 85 -- -- -- -- -- -- ns ns ns ns ns ns 10 10 CAS Precharge WE Delay Time 9 15 tCPWD 53 -- 60 -- ns CAS Active Delay Time from RAS Precharge tRPC 5 -- 5 -- ns RAS to CAS Set-up Time (CAS before RAS) RAS to CAS Hold Time (CAS before RAS) WE to RAS Precharge Time (CAS before RAS) WE Hold Time from RAS (CAS before RAS) tCSR tCHR tWRP tWRH 10 10 10 10 -- -- -- -- 10 10 10 10 -- -- -- -- ns ns ns ns 9 9 9 7/15 Semiconductor Notes: MD51V64400 1. A start-up delay of 200 s is required after power-up, followed by a minimum of eight initialization cycles (RAS-only refresh or CAS before RAS refresh) before proper device operation is achieved. 2. The AC characteristics assume tT = 5 ns. 3. VIH (Min.) and VIL (Max.) are reference levels for measuring input timing signals. Transition times (tT) are measured between VIH and VIL. 4. This parameter is measured with a load circuit equivalent to 1 TTL load and 100 pF. The output timing reference levels are VOH = 2.0 V and VOL = 0.8 V. 5. Operation within the tRCD (Max.) limit ensures that tRAC (Max.) can be met. tRCD (Max.) is specified as a reference point only. If tRCD is greater than the specified tRCD (Max.) limit, then the access time is controlled by tCAC. 6. Operation within the tRAD (Max.) limit ensures that tRAC (Max.) can be met. tRAD (Max.) is specified as a reference point only. If tRAD is greater than the specified tRAD (Max.) limit, then the access time is controlled by tAA. 7. tOFF (Max.) and tOEZ (Max.) define the time at which the output achieves the open circuit condition and are not referenced to output voltage levels. 8. tRCH or tRRH must be satisfied for a read cycle. 9. tWCS, tCWD, tRWD, tAWD and tCPWD are not restrictive operating parameters. They are included in the data sheet as electrical characteristics only. If tWCS tWCS (Min.), then the cycle is an early write cycle and the data out will remain open circuit (high impedance) throughout the entire cycle. If tCWD tCWD (Min.) , tRWD tRWD (Min.), tAWD tAWD (Min.) and tCPWD tCPWD (Min.), then the cycle is a read modify write cycle and data out will contain data read from the selected cell; if neither of the above sets of conditions is satisfied, then the condition of the data out (at access time) is indeterminate. 10. These parameters are referenced to the CAS leading edge in an early write cycle, and to the WE leading edge in an OE control write cycle, or a read modify write cycle. 8/15 E2G0114-17-41R , ,, , ,,, Semiconductor MD51V64400 TIMING WAVEFORM Read Cycle tRC tRP tRAS VIH - RAS VIL - tCRP tCSH tCRP CAS tRCD VIH - VIL - tRAD tASR Address VIH - VIL - tRSH tCAS tRAH tASC tRAL tCAH Column Row tRCS WE OE VIH - VIL - tAA tROH tOEA VIH - VIL - tCAC tRAC DQ tRCH tRRH VOH - tOEZ Open VOL - tOFF Valid Data-out tCLZ "H" or "L" Write Cycle (Early Write) tRC tRP tRAS RAS VIH - VIL - tCRP tCRP CAS VIH - VIL - VIH - VIL - tASC Row tWCS tCAH tRAL tWCH tCWL tWP tRWL VIH - VIL - tDS DQ tCAS Column VIH - WE VIL - OE tRSH tRAD tRAH tASR Address tCSH tRCD VIH - VIL - tDH Valid Data-in Open "H" or "L" 9/15 , ,, Semiconductor MD51V64400 Read Modify Write Cycle tRWC tRAS RAS VIH - VIL - tRP tCRP tCSH tCRP tRCD tRSH tCAS VIH - CAS VIL - tASR VIH - Address VIL - WE VIH - VIL - OE VIH - VIL - tRAH tASC tCAH Column Row tRAD tRWD tAA tAWD tRCS tOEA tOED tCAC tRAC DQ VI/OH- VI/OL- tCWL tRWL tWP tCWD tCLZ tOEZ Valid Data-out tOEH tDS tDH Valid Data-in "H" or "L" 10/15 ,,, , ,,, Semiconductor MD51V64400 Fast Page Mode Read Cycle tRASP VIH - RAS V - IL VIH - CAS VIL - Address WE VIH - VIL - tRP tRHCP tCRP tPC tRCD tCP tASR tCP tCAS tCAS tRAD tRAH tASC tCSH tCAH tASC Column Row VIH - VIL - tCAC VOH - DQ VOL - Column tRCS tRCH tRRH tCPA tOEA tOFF tOEZ tRCH tAA tAA tCAC tOEA tOFF tCAC tOEZ tCLZ Valid Data-out tCLZ tRCS tCPA tOEA tRAC tRAL tCAH tASC Column tAA VIH - OE VIL - tCAS tCAH tRCH tRCS tCRP tRSH tCLZ tOFF tOEZ Valid Data-out Valid Data-out "H" or "L" Fast Page Mode Write Cycle (Early Write) tRASP VIH - RAS V - IL tCRP VIH - CAS VIL - Address VIH - VIL - tCAS tASR tRAH tASC Row tRAD VIH - VIL - tDS VIH - DQ VIL - tRHCP tRSH tRCD tWCS WE tRP tPC tCSH tCAH Column tCWL tWCH tWP tDH Valid Data-in tCP tCRP tCP tCAS tASC tCAH tASC Column tCWL tWCS tWCH tWP tDS tDH Valid Data-in tCAS tCAH tRAL Column tRWL tCWL tWCS tWCH tWP tDS tDH Valid Data-in Note: OE = "H" or "L" "H" or "L" 11/15 Semiconductor MD51V64400 ,,,, ,, , Fast Page Mode Read Modify Write Cycle tRASP VIH - RAS VIL - tRP tCSH tPRWC tRCD VIH - CAS VIL - tASC tCAH tASR VIH - VIL - tCRP tCAS Column Row tCWD tRCS V WE IH - VIL - tCAH Column Column tCWL tAWD tRCS tCPWD tCWD tCWL tWP tDH VI/OH- VI/OL - Out tOEA tOED tOEZ tCAC In Out tCLZ tDH tDS tOEA tOEZ tWP tCPA tAA tOED tCAC tCWL tROH tWP tDH tDS tOEA VIH - OE V - IL tRWL tAWD tCPA tAA tAA tRAL tRCS tCPWD tCWD tAWD tDS tRAC tASC tCAH tASC tRWD DQ tCP tCAS tRAD tRAH Address tCP tCAS tRSH tOED In tCLZ tOEZ tCAC Out In tCLZ "H" or "L" RAS-Only Refresh Cycle tRC RAS VIH - VIL - CAS Address VIH - VIL - VIH - VIL - tRP tRAS tCRP tASR tRPC tRAH Row tOFF DQ VOH - VOL - Open Note: WE, OE = "H" or "L" "H" or "L" 12/15 M L S R Q P Semiconductor MD51V64400 CAS before RAS Refresh Cycle tRC t RP RAS tRP tRAS VIH - VIL - t RPC tRPC tCP CAS tCSR tCHR VIH - VIL - , ,, ,, tWRP WE tWRP tWRH VIH - VIL - t OFF DQ VOH - VOL - Open Note: OE, Address = "H" or "L" "H" or "L" Hidden Refresh Read Cycle tRC tRAS RAS VIH - VIL - VIH - VIL - tRSH tRCD tRAD tASC tRAH Row Column tRAL VIH - WE V IL - tROH VIH - OE V IL - tRAC VOL - tRRH tAA tOEA VOH - tCHR tCAH tRCS DQ tRP VIL - tASR Address tRAS tRP VIH - tCRP CAS tRC tWRP tWRH tCAC tCLZ tOFF tOEZ Valid Data-out "H" or "L" 13/15 , ,, , Semiconductor MD51V64400 Hidden Refresh Write Cycle tRC tRP tRAS RAS tRP VIL - VIH - VIH - VIL - tRSH tRCD tRAD tASC tRAH VIL - tASR Address tRAS VIH - tCRP CAS tRC tCHR tCAH t RAL Column Row tWCS VIH - WE V IL - tWCH tWP tWRP tWRH VIH - OE V IL - tDS V - DQ IH VIL - tDH Valid Data-in "H" or "L" 14/15 Semiconductor MD51V64400 PACKAGE DIMENSIONS (Unit : mm) SOJ32-P-400-1.27 Mirror finish Package material Lead frame material Pin treatment Solder plate thickness Package weight (g) Epoxy resin 42 alloy Solder plating 5 mm or more 1.42 TYP. Notes for Mounting the Surface Mount Type Package The SOP, QFP, TSOP, SOJ, QFJ (PLCC), SHP and BGA are surface mount type packages, which are very susceptible to heat in reflow mounting and humidity absorbed in storage. Therefore, before you perform reflow mounting, contact Oki's responsible sales person for the product name, package name, pin number, package code and desired mounting conditions (reflow method, temperature and times). 15/15