DSEP40-03AS V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 40 A 35 ns Part number DSEP40-03AS 1 2 3 Backside: cathode Features / Advantages: Applications: Package: Planar passivated chips Very low leakage current Very short recovery time Improved thermal behaviour Very low Irm-values Very soft recovery behaviour Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode Rectifiers in switch mode power supplies (SMPS) Uninterruptible power supplies (UPS) Housing: TO-263 (D2Pak) Conditions rIndustry standard outline rEpoxy meets UL 94V-0 rRoHS compliant Ratings Symbol Definition VRRM max. repetitive reverse voltage IR reverse current VF forward voltage I FAV average forward current VF0 threshold voltage rF slope resistance thermal resistance junction to case T VJ virtual junction temperature Ptot total power dissipation I FSM max. forward surge current I RM max. reverse recovery current CJ reverse recovery time junction capacitance IXYS reserves the right to change limits, conditions and dimensions. typ. max. Unit 300 V VR = 300 V 1 A VR = 300 V TVJ = 150 C 0.1 mA TVJ = 25 C 1.44 V 1.81 V 1.18 V 1.58 V TC = 120C 40 A TVJ = 175C 0.72 V IF = 40 A IF = 80 A IF = 40 A IF = 80 A rectangular TVJ = 150 C d = 0.5 for power loss calculation only RthJC t rr min. TVJ = 25 C TVJ = 25 C -55 10 m 0.85 K/W 175 C TC = 25 C 185 W t = 10 ms (50 Hz), sine TVJ = 45C 340 A TVJ = 25 C 3 A IF = TVJ = 125C 7 A 30 A; VR = 200 V -di F /dt = 200 A/s VR = 150 V; f = 1 MHz TVJ = 25 C 35 ns TVJ = 125C 55 ns TVJ = 25 C 50 pF Data according to IEC 60747and per diode unless otherwise specified (c) 2009 IXYS all rights reserved http://store.iiic.cc/ 20090326a DSEP40-03AS Ratings Symbol Definition min. Conditions I RMS RMS current RthCH thermal resistance case to heatsink Tstg storage temperature per pin 1) max. Unit 35 0.25 -55 Weight FC typ. 1) A K/W 150 2 20 mounting force with clip C g 60 N IRMS is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. Product Marking Part No. Logo XXXXXXXXX IXYS yww Date Code Order Code abcd Ordering Standard Part Name DSEP40-03AS IXYS reserves the right to change limits, conditions and dimensions. Marking on Product DSEP40-03AS Delivering Mode Tape & Reel Base Qty Code Key 800 501174 Data according to IEC 60747and per diode unless otherwise specified (c) 2009 IXYS all rights reserved http://store.iiic.cc/ 20090326a DSEP40-03AS Outlines TO-263 (D2Pak) Dim. A A1 Millimeter Inches min max min max 4.06 4.83 0.160 0.190 typ. 0.10 typ. 0.004 b 0.51 0.99 0.020 0.039 b2 1.14 1.40 0.045 0.055 c 0.40 0.74 0.016 0.029 c2 1.14 1.40 0.045 0.029 D 8.38 9.40 0.330 0.370 D1 8.00 8.89 0.315 0.350 E 9.65 10.41 0.380 0.410 E1 6.22 8.20 0.245 0.323 e 2,54 BSC 0,100 BSC H 14.61 15.88 0.575 L 1.78 2.79 0.070 0.625 0.110 L1 1.02 1.68 0.040 0.066 L2 1.02 1.52 0.040 0.060 typ. typ. 0.040 0.0016 0.02 0.0008 All dimensions conform with and/or are within JEDEC standard. W IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per diode unless otherwise specified (c) 2009 IXYS all rights reserved http://store.iiic.cc/ 20090326a DSEP40-03AS 0.5 60 14 50 IF = 60 A 30 A 15 A 0.4 40 IF 16 TVJ = 150C 125C 30 10 0.3 Qrr IRR [C] [A] 6 20 25C TVJ = 125C VR = 200 V 0.1 0.8 1.2 VF [V] 1.6 TVJ = 125C VR = 200 V 4 10 0.4 8 [A] 0.2 0.0 IF = 60 A 30 A 15 A 12 2.0 Fig. 1 Forward current IF versus forward voltage VF 0 100 200 300 400 -diF /dt [A/s] 2 500 0 Fig. 2 Typ. reverse recovery charge Qrr versus -diF /dt 1.4 80 1.2 70 1.0 60 Kf 0.8 trr 50 [ns] 0.6 40 200 300 400 -diF /dt [A/s] 500 Fig. 3 Typ. reverse recovery current IRR versus -diF /dt 800 TVJ = 125C VR = 200 V 100 16 TVJ = 125C VR = 200 V IF = 30 A tfr 700 14 600 IRR 0.4 500 IF = 60 A 30 A 15 A 30 Qrr 0.2 12 VFR 10 tfr 400 [ns] 8 300 6 200 4 100 2 VFR [V] 20 0 40 80 120 160 0 100 TVJ [C] 200 300 400 -diF /dt [A/s] 500 0 14 200 300 400 -diF /dt [A/s] 500 Fig. 6 Typ. forward recovery voltage VFR Fig. 5 Typ. reverse recovery time trr versus -diF /dt Fig. 4 Dynamic parameters Qrr, IRR versus TVJ 100 & forward recovery time tfr vs. diF /dt 1 TVJ = 125C VR = 200 V 12 10 IF = 15 A Erec [J] 8 30 A 60 A ZthJC [K/W] 6 Rthi [K/W] 0.139 0.176 0.305 0.23 4 2 0 100 200 300 400 -diF /dt [A/s] 500 0.1 0.00 1 Fig. 7 Typ. recovery energy Erec versus -diF /dt IXYS reserves the right to change limits, conditions and dimensions. 0.01 0.1 t [s] 1 ti [s] 0.00028 0.0033 0.028 0.17 10 Fig. 8 Transient thermal impedance junction to case Data according to IEC 60747and per diode unless otherwise specified (c) 2009 IXYS all rights reserved http://store.iiic.cc/ 20090326a