DSEP40-03AS
ns
HiPerFRED
Symbol Definition
R a t i n g s
Features / Advantages:
typ. max.
I
FSM
I
R
A
V
340
IA
V
F
1.44
R0.85 K/W
V
R
=
2
1
3
min.
40
t = 10 ms
Applications:
V
RRM
V300
1T
VJ
V°C=
T
VJ
°C=mA0.1
Package:
Part number
V
R
=
T
VJ
=°C
I
F
=A
V
T
C
=120°C
d =
P
tot
185 WT
C
°C=
T
VJ
175 °C-55
V
I
RRM
=
=300
40
40
T
VJ
=45°C
DSEP40-03AS
V
A
300
V300
25
25
25
max. repetitive reverse voltage
reverse current
forward voltage
virtual junction temperature
total power dissipation
max. forward surge current
Conditions Unit
1.81
T
VJ
°C=25
C
J
j
unction capacitance V = V; T
150
V
F0
V0.72T
VJ
=175°C
r
F
10 Ω
f = 1 MHz = °C25
m
V1.18T
VJ
=°C
I
F
=A
V
40
1.58
I
F
=A80
I
F
=A80
threshold voltage
slope resistance for power loss calculation only
Backside: cathode
3A
T
VJ
=°C
reverse recovery time
A7
35
55
ns
(50 Hz), sine
t
rr
=35 ns
● Housing:
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
TO-263 (D2Pak)
●rIndustry standard outline
●rEpoxy meets UL 94V-0
●rRoHS compliant
RVJ
I
RM
max. reverse recovery current
I
F
=A;30
25
T=125°C
VJ
-di
F
=A/µs200/dtt
rr
V
R
=V200
T
VJ
=°C25
T=125°C
VJ
µA
50150 pF
thermal resistance junction to case
thJC
rectangular 0.5
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
FAV
average forward current
FAV
150
IXYS reserves the right to change limits, conditions and dimensions.
©
20090326a
Data according to IEC 60747and per diode unless otherwise specified
2009 IXYS all rights reserved
http://store.iiic.cc/
DSEP40-03AS
I
RMS
A
per pin 35
R
thCH
K/W0.25
T
stg
°C150
storage temperature -55
Weight g2
Symbol Definition Ratings
typ. max.min.Conditions
RMS current
thermal resistance case to heatsink
Unit
I is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip.
In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting
the backside.
F
C
N60
mounting force with clip 20
Ordering Delivering Mode Base Qty Code Key
Standard
Part Name
DSEP40-03AS 501174Tape & Reel 800
Product Marking
Date Code
Part No.
Logo
Order Code
XXXXXXXXX
IXYS
yww
abcd
1)
1
)
Marking on Product
DSEP40-03AS
RMS
IXYS reserves the right to change limits, conditions and dimensions.
©
20090326a
Data according to IEC 60747and per diode unless otherwise specified
2009 IXYS all rights reserved
http://store.iiic.cc/
DSEP40-03AS
min max min max
A 4.06 4.83 0.160 0.190
A1
b 0.51 0.99 0.020 0.039
b2 1.14 1.40 0.045 0.055
c 0.40 0.74 0.016 0.029
c2 1.14 1.40 0.045 0.029
D 8.38 9.40 0.330 0.370
D1 8.00 8.89 0.315 0.350
E 9.65 10.41 0.380 0.410
E1 6.22 8.20 0.245 0.323
e
H 14.61 15.88 0.575 0.625
L 1.78 2.79 0.070 0.110
L1 1.02 1.68 0.040 0.066
L2 1.02 1.52 0.040 0.060
Wtyp.
0.02 0.040 typ.
0.0008 0.0016
All dimensions conform with and/or are within
JEDEC standard.
Dim. Millimeter Inches
2,54 BSC
typ. 0.10 typ. 0.004
0,100 BSC
Outlines TO-263 (D2Pak)
IXYS reserves the right to change limits, conditions and dimensions.
©
20090326a
Data according to IEC 60747and per diode unless otherwise specified
2009 IXYS all rights reserved
http://store.iiic.cc/
DSEP40-03AS
0.00.40.81.21.62.0
10
20
30
40
50
60
100 300 5000 200 400
20
30
40
50
60
70
80
0.001 0.01 0.1 1 10
0.1
1
0 40 80 120 160
0.2
0.4
0.6
0.8
1.0
1.2
1.4
K
f
T
VJ
[°C] -di
F
/dt [A/µs]
t[s]
0 100 200 300 400 500
100
200
300
400
500
600
700
800
2
4
6
8
10
12
14
16
0 100 200 300 400 500
2
4
6
8
10
12
14
16
0 100 200 300 400 500
0.1
0.2
0.3
0.4
0.5
Q
rr
[µC]
V
F
[V] -di
F
/dt [A/µs]
Z
thJC
[K/W]
I
F
= 60 A
30 A
15 A
I
F
=60 A
30 A
15 A
I
RR
Q
rr
I
F
= 60 A
30 A
15 A
V
FR
t
fr
125°C
T
VJ
=125°C
V
R
= 200 V
T
VJ
=125°C
V
R
= 200 V
I
F
=30A
T
VJ
=125°C
V
R
= 200 V
T
VJ
=150°C
T
VJ
= 125°C
V
R
=200 V
Fig. 1 Forward current I
F
versus
forward voltage V
F
Fig. 2 Typ. reverse recovery charge
Q
rr
versus -di
F
/dt
Fig. 3 Typ. reverse recovery current
I
RR
versus -di
F
/dt
Fig. 4 Dynamic parameters
Q
rr
,I
RR
versus T
VJ
Fig. 5 Typ. reverse recovery time
t
rr
versus -di
F
/dt
Fig. 6 Typ. forward recovery voltage V
FR
& forward recovery time t
fr
vs. di
F
/dt
Fig. 8 Transient thermal impedance junction to case
25°C
I
F
[A]
-di
F
/dt [A/µs]
I
RR
[A]
t
rr
[ns]
-di
F
/dt [A/µs]
t
fr
[ns]
V
FR
[V]
0 100 200 300 400 500
2
4
6
8
10
12
14
E
rec
[µJ]
-di
F
/dt [A/µs]
Fig. 7 Typ. recovery energy
E
rec
versus -di
F
/dt
T
VJ
=125°C
V
R
=200 V
R
thi
[K/W]
0.139
0.176
0.305
0.23
t
i
[s]
0.00028
0.0033
0.028
0.17
I
F
=15 A
30 A
60 A
IXYS reserves the right to change limits, conditions and dimensions.
©
20090326a
Data according to IEC 60747and per diode unless otherwise specified
2009 IXYS all rights reserved
http://store.iiic.cc/
