MOSPOWER Selector Guide MOSPOWER Selector Guide, (Continued) N-Channel MOSPOWER R (Continued) Breakdown - Ip Power Patt Device Voltage (ones) Continuous Dissipution N oD (Volts) (Ohms (Amps) (Watts) umber 200 0.18 18.0 125 IRF640 200 0.22 16.0 125 IRF642 200 0.4 9.0 75 IRF630 200 0.6 8.0 75 IRF632 200 0.8 5.0 40 IRF620 200 1.2 4.0 40 IRF622 170 6.0 1.4 20 VN1706D 150 0.18 18.0 125 IRF641 150 0.22 16.0 125 IRF643 150 0.4 9.0 75 IRF631 150 0.6 8.0 75 IRF633 150 0.8 5.0 40 IRF621 150 1.2 4.0 40 IRF623 120 0.18 14.0 75 VN1200D 120 0.25 12.0 75 VN12Q1D 120 6.0 1.4 20 VN1206D 100 0.085 27.0 125 IRF540 100 0.11 24.0 125 IRF542 100 0.18 14.0 75 VN1000D 100 0.18 14.0 75 IRF530 100 0.25 12.0 75 VN1001D 100 0.25 12.0 75 IRF532 . 100 0.30 8.0 40 IRF520 TO-220AB 100 0.40 7.0 40 iIRF522 80 0.18 14.0 75 VNO800D 80 0.25 12.0 75 VNO0801D 80 4.0 1.7 20 VN88AD 80 4.5 1.6 20 VN89AD 60 0.085 27.0 125 IRF541 60 0.11 24.0 125 IRF543 60 0.12 18.0 75 VNO600D 60 0.15 16.0 75 VNO601D 60 0.18 14.0 75 IRF531 60 0.25 12.0 75 IRF533 60 0.30 8.0 40 IRF521 60 0.40 7.0 40 IRF523 60 3.0 1.9 20 VN66AD 60 3.5 1.8 20 VN67AD 40 0.12 18.0 75 VNO400D 40 0.15 16.0 75 VNO401D 40 3.0 1.9 20 VN46AD 40 5.0 1.5 20 VN40AD 30 1.2 2.5 20 VNO300D 80 4.0 1.5 15 VN88AF 80 45 1.4 15 VN89AF 80 5.0 1.3 15 VNS80AF 60 3.0 1.7 15 " VNBG6AF 60 3.5 1.6 15 *NNG7TAF A 40 3.0 16 15 VN46AF. TO-202A 40 5.0 1.3 15 VN40AF 240 6.0 0.8 6.25 VN2406B 170 6.0 0.8 6.25 VN1706B 120 6.0 0.8 6.25 VN1206B 100 0.3 6.0 20 IRFF120 100 0.4 5.0 20 IRFF122 90 4.0 0.9 6.25 2N6661 90 45 0.9 6.25 VNI9SAB 90 5.0 0.8 6.25 VNS0AB 60 0.3 6.0 20 IRFF121 + 60 0.4 5.0 20 IRFF123 0-38 60 3.0 1.1 6.25 2N6660 60 3.5 1.0 6.25 VN67AB 35 1.8 1.4 6.25 2N6659 _35 25 412 6.25 VN35AB Siliconix406D = VNiI706D = VNi206D a: VN2406B = VN41706B # VN41206B VNZ solenoid and relay drivers. FEATURES High Voltage No Second Breakdown High Input Impedance Internal Drain-Source Diode Very Rugged: Excellent SOA Extremely Fast Switching BENEFITS = Reduced Component Count = Improved Performance s Simpler Designs a Improved Reliability VN2406B VN41706B VN1206B Ss VN2406D VN41706D VN1206D 240Vmosrower These power FETs are designed especially for off-line switching regulators, converters, Product Summary Nooiter BVoss Rosion) Ip Package VN24068 240V VN1706B - 170V 60 0.8A TO-39 VN1206B 120V VN2406D 240V VN1706D 170V 60 1.4A TO-220AB VN1206D 120V D ey 5 Drain-Source Voltage Drain Current Continuous B Suffix... . ce eee eee +0.8A D Suffix... eee eee ees +1.4A Pulsed? . oo... +3A VN1210B, D wo. cece eee ees 120V VN1710B, D .... eee ccc eee 170V VN2410B, Do... eee eee eee eee 240V Drain-Gate Voltage VN1210B, D .. eect eens 120V VN1710B, D oo. cece eee eee eee 170V VN2410B, D ..... sce cee ee eee eens 240V Gate Current (Peak).........-00 0c cece +1A Gate Source Voltage ............. cee ee eee +40V ABSOLUTE MAXIMUM RATINGS (Tc = 25C unless otherwise noted) TO-39 TO-220AB Total Power Dissipation.... 6.25W 20W Linear Derating Factor ..... 50mw/C 1t6OmMWwiC Operating and Storage Temperature ............0. eee 55C to +150C Lead Temperature (1 1/16 from Case for 10 secs)........ +300C Notes: 1. Limited by package dissipation. 2. Pulse test80yus to 300us, 1% duty cycle. PACKAGE DIMENSIONS PIN 1 Source PIN 2 Gate PIN 3 & CASE Drain o240 1370) | osas| = a0) min | BASE 5 SOLID KOVAR (ALLOY 42) Sa era 8.5b) 18:00) 9.370 0.360 oz00__ff k (240) (5 O8F 329) V o12s 3 Leaps jo08 0.021.593) none core 406) OA TO-39 BOTTOM VIEW PIN 1 Gate , PIN 2 &TAB Drain PIN 3 Source 590 12 70) 380 (7473) 181 1408 Wore 754 250 \ 18351 1 2-80 SiliconixELECTRICAL CHARACTERISTICS (Tc =25C unless otherwise noted) Symbol | Characteristics | Type | Min | Max | Unit [ Test Conditions Static VN2406B 240 VNI308B | 190 | BVopss Drain-Source Breakdown YNDIOBD a40 Vv Ves= 0, 1p =100uA VN1706D 1790 VN1206D 120 Vasitny Gate Threshold Voltage All 0.8 2.0 Vv Vos = Ves, [p= imA 100 Vos = 0, Veg = 15V lass Gate Body Leakage All nA os Ss 500 Vg = 0, Vgg = 15V, Ta = 125C \ Zero Gate Voltage Drain All 10 Vpg = 120V, Vgs= 0 bss Current HA = = = jose 500 Vpg = 120V, Veg = 0, Ta = 125C Vag = 2.5V, 1p = 0.1A Vv Drain-Source Saturation 1.0 DS(on) Voltage v 3.0 Vag = 10V, 1p =0.5A Drain-Source On 10 Vas= 2.5V,1p=01A "DS(on} Resistance! a 6 Vgg= 10V, 1p =0.5A ' Dion) On-State Drain Current? All 1.0 A Vg = 25V, Vag = 10V Dynamic Sts Forward Transconductance! All 300 ms Vos* 25V, [p= 0.5A Ciss Input Capacitance All 125 Reverse Transfer Crs Capacitance All 20 pF | Vas= 0, Vog= 25V, f= 1 MHz Ds Common-Source Output Coss Capacitance All 50 Drain-Source Diode Characteristics Typ Vso Forward ON Voltage! -1.2 v Ig =1.0A, Veg =0 ter Reverse Recovery Time 100 ns (-= IR= 1.0A, Vgg= 0 (Figure 1) Note 1: Pulse test 80 us to 300 us, 1% duty cycle TEST CIRCUIT Reverse Recovery Test Circuit Refer to VNDB24 Design Curves (See Section 4) WA 500 di/dt Adjust (1 - 27 uH) Ast 5 TO 50uF IN4933 4 Ar PK yAdiust , 6 A + 2402 r f + 2 yN4001 4000).F 2 >+ - < , R< 0.259 L$ 0.01uH + 2. Le AA SCOPE & FROM TRIGGER CKT G90ZVNA = G90ZbNA = Q90PZNA G9OZVNA = A90ZLNA = S90VZ2NA SiliconixTYPICAL STATIC CHARACTERISTICS (Pulse width 80yus 300s, Duty cycle 1%, To =25C) Ohmic Region _ 10 a 5V < ~ 08 Zz Wi & 5 06 Oo Zz < x 04 a | a = 02 0) 0 2 4 6 8 10 12 14 16 18 20 Vos - DRAIN SOURCE VOLTAGE (VOLTS) Temperature Effects on rpsjon) w 3.0 Q z ~ 25 <u zg J 2.0 L z A 35 1 9 15 WW N 3 4 = 10 3 = 05 0 -50 -25 0 25 50 75 100 125 150 Ty - JUNCTION TEMPERATURE (C) Transfer Characteristics 1.0 (TF T TT TTY = L 55C = 2 VpDs = 30V = 08 125C : WY - i 4 z 25C 2 06 [ c 2 L 4 oO Z 04 <q & LL a = t a Oo 02 W/ i Ve L L 0 1 2 3 4 5 Vas GATE SOURCE VOLTAGE (VOLTS) LEAKAGE CURRENT (nA) 1(DS) - ON RESISTANCE (OHMS) Ip - DRAIN CURRENT (mA) wel AL | VNDB24 Part Numbers: VN2406L, VN1706L, VN1206L, VN2406M, VN1706M, VN1206M, VN2406B, VN17068, VN1206B, VN2406D, VN1706D, VN1206D, VN2410L, VN1710L, VN1210L, VN2410M, VN1710M, VN1210M Leakage Current | I Vps = 200V 104 t 'Dss i r08 Lm | "| Vps = 100 102 10 1 less GS = 10V 10-1 wi 0 25 50 75 100 125 150 Tc - CASE TEMPERATURE (C) ON Resistance Characteristics 8.0 i N \ \ MN 1A 6.0 \ 500 mA 5.0 Nua ee Ip = 200mA Pee 4.0 + 30 2.0 VosYTH GATE ENHANCEMENT VOLTAGE (VOLTS) 0 Threshold 777, 7 BVT L Jes os) o | -55 4 m Oo hi S % Qa < PEL oN oN 06 08 #$(10 :42 #14 416 1.8 20 Vas GATE SOURCE VOLTAGE (VOLTS) 01/83 4-10 SiliconixTYPICAL CHARACTERISTICS (Cont'd) Part Numbers: VN2406L, VN1706L, VN1206L, VN2406M, VN1706M, VN1206M, VN2406B, VN1706B, VN1206B, VN2406D, VN1706D, VN1206D, VN2410L, VN1710L, VN1210L, VN2410M, VN1710M, VN1210M Power Derating 1.0 E08 = z 0.6 TO-237 ba = = < a % 0.4 6 ae z z 0.2 a O-92 Qja= 0 40 80 120 160 200 TEMPERATURE (C) Power Derating a E < = z 3 = < a a 2 ao a TT} = 3 a I a a 160 200 0 40 80 120 Tc TEMPERATURE (C) POWER DISSIPATION (WATTS) =_ o ae Power Derating TO-39 AT HE. 6jc = 20CIW FREE AIR 8ja = 170CIW 40 80 120 160 TEMPERATURE (C) 200 VNDB24 Siliconix 4-11 VCEQNA