2N2223AX MECHANICAL DATA Dimensions in mm (inches) DUAL NPN TRANSISTOR IN TO77 HERMETIC PACKAGE 8.51 (0.335) 9.40 (0.370) 6.10 (0.240) 6.60 (0.260) 7.75 (0.305) 8.51 (0.335) FEATURES 12.7 (0.500) Min. 1.02 (0.040) Max. * Silicon Planar Epitaxial NPN Transistor * High Rel and Screening Options Available. 0.41 (0.016) 0.53 (0.021) 5.08 (0.200) 2.54 (0.100) 4 2.54 (0.100) 3 5 0.74 (0.029) 1.14 (0.045) 6 2 1 45 0.71 (0.028) 0.86 (0.034) TO77 METAL PACKAGE PIN 1 - Collector PIN 2 - Base PIN 3 - Emitter PIN 4 - Emitter PIN 5 - Base PIN 6 - Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VCEO VCER VCBO Collector - Emitter Voltage Collector - Emitter Voltage Collector - Base Voltage VEBO Emitter - Base Voltage IC TJ , Tstg Collector Current Operating and Storage Junction Temperature Range PD PD 60V 80V 100V 7V Total Device Dissipation @ TA = 25C Total Device Dissipation Derate above 25C @ TC = 25C Derate above 25C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk 500mA -65 to +200C Per Side 0.5W Total Device 0.6W 2.86mW/C 1.6W 9.1mW/C 3.43mW/C 3.0W 11.4mW/C Document 7288 Issue 2 2N2223AX ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit V(BR)CER* OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage IC = 100mA RBE 10 80 V V(BR)CEO* Collector - Emitter Breakdown Voltage IC = 30mA IB = 0 60 V V(BR)CBO Collector - Base Breakdown Voltage IC = 100A IE = 0 100 V V(BR)EBO Emitter - Base Breakdown Voltage IE = 100A IC = 0 7 V ICBO Collector Cut-off Current IEBO Emitter Cut-off Current VCB = 80V 0.01 A IE = 0 TA = 150C 15 VBE = 5V IC = 0 10 nA -- ON CHARACTERISTICS hFE IC = 10A VCE = 5V 15 IC = 100A VCE = 5V 25 250 IC = 10mA VCE = 5V 50 250 Collector - Emitter Saturation Voltage IC = 50mA IB = 5mA 1.2 Base - Emitter Saturation Voltage IC = 50mA IB = 5mA 0.9 IC = 50mA VCE = 10V DC Current Gain VCE(sat) VBE(sat) V SMALL SIGNAL CHARACTERISTICS fT Current Gain Bandwidth Product Cob Output Capacitance Cib Input Capacitance hib Input Impedance hfe Small Signal Current Gain IC = 1mA hoe Output Admittance f = 1kHz hFE1/hFE2 MATCHING CHARACTERISTICS DC Current Gain Ratio 1 IC = 100A VCE = 5V VBE1-VBE2 Base - Emitter Voltage Differential IC = 100A VCE = 5V (VBE1-VBE2) Base - Emitter Voltage Differential IC = 100A VCE = 5V T Change Due To Temperature f = 20MHz IE = 0 50 MHz VCB = 10V 15 pF 85 pF 20 30 40 250 -- .05 mhos 1.0 -- f = 1MHz IC = 0 VBE = 0.5V f = 1MHz IC = 1mA VCB = 5V f = 1kHz VCE = 5V TA = -55 to +125C 0.9 5.0 mV 25 V/C * Pulse Test: tp 300s, 2%. 1) The lowest hFE reading is taken as hFE1 for this ratio. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document 7288 Issue 2